LME49870 [TI]
44V Single High Performance, High Fidelity Audio Operational Amplifier;型号: | LME49870 |
厂家: | TEXAS INSTRUMENTS |
描述: | 44V Single High Performance, High Fidelity Audio Operational Amplifier |
文件: | 总36页 (文件大小:1522K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LME49870
www.ti.com
SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
LME49870 44V Single High Performance, High Fidelity Audio Operational Amplifier
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1
FEATURES
DESCRIPTION
The LME49870 is part of the ultra-low distortion, low
noise, high slew rate operational amplifier series
optimized and fully specified for high performance,
high fidelity applications. Combining advanced
leading-edge process technology with state-of-the-art
circuit design, the LME49870 audio operational
amplifier delivers superior audio signal amplification
for outstanding audio performance. The LME49870
combines extremely low voltage noise density
(2.7nV/√Hz) with vanishingly low THD+N (0.00003%)
to easily satisfy the most demanding audio
applications. To ensure that the most challenging
loads are driven without compromise, the LME49870
has a high slew rate of ±20V/μs and an output current
capability of ±26mA. Further, dynamic range is
maximized by an output stage that drives 2kΩ loads
to within 1V of either power supply voltage and to
within 1.4V when driving 600Ω loads.
2
•
Easily Drives 600Ω Loads
•
•
•
Optimized for Superior Audio Signal Fidelity
Output Short Circuit Protection
PSRR and CMRR Exceed 120dB (Typ)
APPLICATIONS
•
•
High Quality Audio Amplification
High Fidelity Preamplifiers, Phono Preamps,
and Multimedia
•
•
High Performance Professional Audio
High Fidelity Equalization and Crossover
Networks with Active Filters
•
•
High Performance Line Drivers and Receivers
Low Noise Industrial Applications Including
Test, Measurement, and Ultrasound
The LME49870's outstanding CMRR (120dB), PSRR
(120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
KEY SPECIFICATIONS
•
•
Power Supply Voltage Range: ±2.5V to ±22V
THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
The LME49870 has a wide supply range of ±2.5V to
±22V. Over this supply range the LME49870
maintains excellent common-mode rejection, power
supply rejection, and low input bias current. The
LME49870 is unity gain stable. This Audio
Operational Amplifier achieves outstanding AC
performance while driving complex loads with values
as high as 100pF.
–
–
RL = 2kΩ: 0.00003% (Typ)
RL = 600Ω: 0.00003% (Typ)
•
•
•
•
•
•
•
Input Noise Density: 2.7nV/√Hz (Typ)
Slew Rate: ±20V/μs (Typ)
Gain Bandwidth Product: 55MHz (Typ)
Open Loop Gain (RL = 600Ω): 140dB (Typ)
Input Bias Current: 10nA (Typ)
The LME49870 is available in 8–lead narrow body
SOIC. Demonstration boards are available for each
package.
Input Offset Voltage: 0.1mV (Typ)
DC Gain Linearity Error: 0.000009%
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2007–2013, Texas Instruments Incorporated
LME49870
SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
www.ti.com
TYPICAL APPLICATION
150W
3320W
3320W
150W
26.1 kW
+
909W
-
-
LME49870
LME49870
+
+
3.83 kW
+
100W
OUTPUT
22 nF//4.7 nF//500 pF
10pF
INPUT
47 kW
47 nF//33 nF
Note: 1% metal film resistors, 5% polypropylene capacitors
Figure 1. Passively Equalized RIAA Phono Preamplifier
CONNECTION DIAGRAM
NC
-IN
NC
V+
-
+
+IN
V
OUT
V-
NC
Figure 2. Package Number — D0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Power Supply Voltage (VS = V+ - V-)
Storage Temperature
46V
−65°C to 150°C
(V-) - 0.7V to (V+) + 0.7V
Continuous
Input Voltage
Output Short Circuit(4)
Power Dissipation
ESD Rating(5)
Internally Limited
2000V
ESD Rating(6)
Pins 1, 4, 7 and 8
Pins 2, 3, 5 and 6
200V
100V
Junction Temperature
Thermal Resistance
150°C
θJA (SO)
145°C/W
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as
otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and
are not ensured
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature,
TA. The maximum allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings,
whichever is lower.
(5) Human body model, applicable std. JESD22-A114C.
(6) Machine model, applicable std. JESD22-A115-A.
OPERATING RATINGS
Temperature Range (TMIN ≤ TA ≤ TMAX
)
−40°C ≤ TA ≤ 85°C
±2.5V ≤ VS ≤ ±22V
Supply Voltage Range
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ELECTRICAL CHARACTERISTICS FOR THE LME49870(1)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
LME49870
Units
(Limits)
Symbol
Parameter
Conditions
AV = 1, VOUT = 3Vrms
Typical(2)
Limit(3)
THD+N
Total Harmonic Distortion + Noise
Intermodulation Distortion
RL = 2kΩ
RL = 600Ω
0.00003
0.00003
% (max)
0.00009
AV = 1, VOUT = 3VRMS
Two-tone, 60Hz & 7kHz 4:1
IMD
0.00005
%
GBWP
SR
Gain Bandwidth Product
Slew Rate
55
45
MHz (min)
±20
±15
V/μs (min)
VOUT = 1VP-P, –3dB
referenced to output magnitude
at f = 1kHz
FPBW
ts
Full Power Bandwidth
10
MHz
AV = –1, 10V step, CL = 100pF
0.1% error range
Settling time
1.2
μs
μVRMS
(max)
Equivalent Input Noise Voltage
Equivalent Input Noise Density
Current Noise Density
fBW = 20Hz to 20kHz
0.34
0.65
4.7
en
f = 1kHz
f = 10Hz
2.5
6.4
nV/√Hz
(max)
in
f = 1kHz
f = 10Hz
1.6
3.1
pA/√Hz
VS = ±18V
VS = ±22V
±0.12
±0.14
mV (max)
mV (max)
VOS
Offset Voltage
±0.7
Average Input Offset Voltage Drift vs
Temperature
ΔVOS/ΔTemp
–40°C ≤ TA ≤ 85°C
0.1
μV/°C
(4)
Average Input Offset Voltage Shift vs VS = ±18V, ΔVS = 24V
120
120
PSRR
dB (min)
nA (max)
nA/°C
Power Supply Voltage
VS = ±22V, ΔVS = 30V
110
72
IB
Input Bias Current
VCM = 0V
10
0.2
11
Input Bias Current Drift vs
Temperature
ΔIOS/ΔTemp
–40°C ≤ TA ≤ 85°C
VCM = 0V
IOS
Input Offset Current
65
nA (max)
+17.1
–16.9
V (min)
V (min)
VS = ±18V
VIN-CM
Common-Mode Input Voltage Range
+21.0
–20.8
(V+) – 2.0
(V-) + 2.0
V (min)
V (min)
VS = ±22V
VS = ±18V, –12V≤Vcm≤12V
VS = ±22V, –15V≤Vcm≤15V
120
120
30
dB (min)
dB (min)
kΩ
CMRR
ZIN
Common-Mode Rejection
110
Differential Input Impedance
Common Mode Input Impedance
–10V<Vcm<10V
1000
MΩ
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All
voltages are measured with respect to the ground pin, unless otherwise specified.
(2) Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of
product characterization and are not ensured.
(3) Datasheet min/max specification limits are specified by test or statistical analysis.
(4) PSRR is measured as follows: For VS, VOS is measured at two supply voltages, ±7V and ±22V, PSRR = |20log(ΔVOS/ΔVS)|.
4
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ELECTRICAL CHARACTERISTICS FOR THE LME49870(1) (continued)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwise
specified.
LME49870
Units
(Limits)
Symbol
Parameter
Conditions
Typical(2)
Limit(3)
VS = ±18V
–12V≤Vout≤12V
RL = 600Ω
RL = 2kΩ
140
140
140
dB
dB
dB
RL = 10Ω
AVOL
Open Loop Voltage Gain
VS = ±22V
–15V≤Vout≤15V
RL = 600Ω
RL = 2kΩ
140
140
140
125
dB
dB
dB
RL = 10Ω
RL = 600Ω
VS = ±18V
VS = ±22V
±16.7
±20.4
V (min)
V (min)
±19.0
RL = 2kΩ
VS = ±18V
VS = ±22V
VOUTMAX
Maximum Output Voltage Swing
±17.0
±21.0
V (min)
V (min)
RL = 10kΩ
VS = ±18V
VS = ±22V
±17.1
±21.0
V (min)
V (min)
RL = 600Ω
VS = ±20V
VS = ±22V
IOUT
Output Current
±31
±37
mA (min)
mA (min)
±30
+53
–42
IOUT-CC
Instantaneous Short Circuit Current
Output Impedance
mA
fIN = 10kHz
Closed-Loop
Open-Loop
ROUT
0.01
13
Ω
CLOAD
IS
Capacitive Load Drive Overshoot
Total Quiescent Current
100pF
16
5
%
IOUT = 0mA
6.5
mA (max)
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TYPICAL PERFORMANCE CHARACTERISTICS
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 2kΩ
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
20
10
1
10m
20
10
100m
1
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 3.
Figure 4.
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 2kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
20
10
100m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 5.
Figure 6.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 600Ω
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
1
10
20
10m
20
10m
1
10
100m
100m
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 7.
Figure 8.
6
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 600Ω
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10
10m
20
100m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 9.
Figure 10.
THD+N vs Output Voltage
VCC = 15V, VEE = –15V
RL = 10kΩ
THD+N vs Output Voltage
VCC = 12V, VEE = –12V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
10m
20
100m
1
10
100m
1
20
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 11.
Figure 12.
THD+N vs Output Voltage
VCC = 22V, VEE = –22V
RL = 10kΩ
THD+N vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
10m
20
10
100m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 13.
Figure 14.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 2kΩ
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 15.
Figure 16.
THD+N vs Frequency
THD+N vs Frequency
VCC = 22V, VEE = –22V, VOUT = 3VRMS
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 2kΩ
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 17.
Figure 18.
THD+N vs Frequency
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 600Ω
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 19.
Figure 20.
8
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
THD+N vs Frequency
VCC = 15V, VEE = –15V, VOUT = 3VRMS
RL = 10kΩ
THD+N vs Frequency
VCC = 12V, VEE = –12V, VOUT = 3VRMS
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00001
0.00002
0.00001
20 50 100 200 500 1k 2k 5k 10k 20k
20 50 100 200 500 1k 2k 5k 10k 20k
Hz
Hz
Figure 21.
Figure 22.
THD+N vs Frequency
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 2kΩ
VCC = 22V, VEE = –22V, VOUT = 3VRMS
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000007
20 50 100 200 500 1k 2k 5k 10k 20k
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
Hz
Figure 23.
Figure 24.
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 2kΩ
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 2kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.000007
0.00001
0.000007
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 25.
Figure 26.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000006
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 27.
Figure 28.
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 600Ω
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 600Ω
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000007
0.000006
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 29.
Figure 30.
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
IMD vs Output Voltage
VCC = 15V, VEE = –15V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000006
100m
300m
500m 700m
1
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 31.
Figure 32.
10
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
IMD vs Output Voltage
VCC = 12V, VEE = –12V
RL = 10kΩ
IMD vs Output Voltage
VCC = 22V, VEE = –22V
RL = 10kΩ
0.01
0.01
0.005
0.005
0.002
0.001
0.002
0.001
0.0005
0.0005
0.0002
0.0001
0.0002
0.0001
0.00005
0.00005
0.00002
0.00002
0.00001
0.00001
0.000006
0.000006
100m 200m 500m
1
2
5
10
100m 200m 500m
1
2
5
10
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Figure 33.
Figure 34.
IMD vs Output Voltage
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
Voltage Noise Density vs Frequency
100
10
1
100
0.01
V
V
= 30V
S
0.005
= 15V
CM
0.002
0.001
0.0005
10
0.0002
0.0001
2.7 nV/Hz
0.00005
0.00002
0.00001
1
100000
1000 10000
1
10
100
100m
300m
500m 700m
1
FREQUENCY (Hz)
OUTPUT VOLTAGE (V)
Figure 35.
Figure 36.
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ, VRIPPLE = 200mVpp
Current Noise Density vs Frequency
0
100
10
1
100
V
V
= 30V
-10
-20
S
= 15V
CM
-30
-40
-50
-60
-70
-80
-90
10
-100
-110
-120
-130
-140
1.6 pA/Hz
100000
1000 10000
1
1
10
100
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 37.
Figure 38.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 17V, VEE = –17V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 39.
Figure 40.
PSRR- vs Frequency
VCC = 17V, VEE = –17V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 41.
Figure 42.
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (HZ)
Figure 43.
Figure 44.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 45.
Figure 46.
PSRR- vs Frequency
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω, VRIPPLE = 200mVpp
VCC = 2.5V, VEE = –2.5V
RL = 2kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 47.
Figure 48.
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 17V, VEE = –17V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 49.
Figure 50.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR- vs Frequency
VCC = 17V, VEE = –17V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 51.
Figure 52.
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 53.
Figure 54.
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 55.
Figure 56.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR- vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 57.
Figure 58.
PSRR- vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 17V, VEE = –17V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 59.
Figure 60.
PSRR- vs Frequency
VCC = 17V, VEE = –17V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 61.
Figure 62.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
PSRR- vs Frequency
VCC = 12V, VEE = –12V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 63.
Figure 64.
PSRR- vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ, VRIPPLE = 200mVpp
PSRR+ vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-10
-20
-10
-20
-30
-40
-30
-40
-50
-60
-50
-60
-70
-80
-70
-80
-90
-90
-100
-100
-110
-120
-130
-140
-110
-120
-130
-140
20
100
1k
10k
100k 200k
20
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 65.
Figure 66.
PSRR- vs Frequency
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 2kΩ
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ, VRIPPLE = 200mVpp
0
0
-20
-10
-20
-30
-40
-40
-50
-60
-70
-80
-60
-90
-80
-100
-110
-120
-130
-140
-100
-120
20
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 67.
Figure 68.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMRR vs Frequency
VCC = 12V, VEE = –12V
RL = 2kΩ
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 2kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 69.
Figure 70.
CMRR vs Frequency
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
VCC = 15V, VEE = –15V
RL = 2kΩ
RL = 600Ω
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 71.
Figure 72.
CMRR vs Frequency
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 600Ω
VCC = 12V, VEE = –12V
RL = 600Ω
0
-20
0
-20
-40
-60
-80
-40
-60
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 73.
Figure 74.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
CMRR vs Frequency
VCC = 2.5V, VEE = –2.5V
RL = 600Ω
CMRR vs Frequency
VCC = 15V, VEE = –15V
RL = 10kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
FREQUENCY (Hz)
10k
100k 200k
FREQUENCY (Hz)
Figure 75.
Figure 76.
CMRR vs Frequency
CMRR vs Frequency
VCC = 22V, VEE = –22V
RL = 10kΩ
VCC = 12V, VEE = –12V
RL = 10kΩ
0
-20
0
-20
-40
-40
-60
-60
-80
-80
-100
-120
-100
-120
10
100
1k
10k
100k 200k
10
100
1k
10k
100k 200k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 77.
Figure 78.
CMRR vs Frequency
Output Voltage vs Load Resistance
VCC = 15V, VEE = –15V
THD+N = 1%
VCC = 2.5V, VEE = –2.5V
RL = 10kΩ
11.5
0
-20
11.0
10.5
-40
-60
10.0
9.5
-80
-100
-120
9.0
10
100
1k
10k
100k 200k
500
600
800
2k
5k
10k
LOAD RESISTANCE (W)
FREQUENCY (Hz)
Figure 79.
Figure 80.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Voltage vs Load Resistance
VCC = 12V, VEE = –12V
THD+N = 1%
Output Voltage vs Load Resistance
VCC = 22V, VEE = –22V
THD+N = 1%
9.5
9.0
8.5
8.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
7.5
7.0
500
600
800
2k
5k
10k
500
600
800
2k
5k
10k
LOAD RESISTANCE (W)
LOAD RESISTANCE (W)
Figure 81.
Figure 82.
Output Voltage vs Load Resistance
VCC = 2.5V, VEE = –2.5V
THD+N = 1%
Output Voltage vs
Total Power Supply Voltage
RL = 2kΩ, THD+N = 1%
1.25
1.00
0.75
0.25
0.50
0.00
500
600
800
2k
5k
10k
LOAD RESISTANCE (W)
Figure 83.
Figure 84.
Output Voltage vs
Output Voltage vs
Total Power Supply Voltage
RL = 10kΩ, THD+N = 1%
Total Power Supply Voltage
RL = 600Ω, THD+N = 1%
Figure 85.
Figure 86.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Power Supply Current vs
Total Power Supply Voltage
RL = 2kΩ
Power Supply Current vs
Total Power Supply Voltage
RL = 600Ω
5.0
5.0
4.8
4.6
4.4
4.8
4.6
4.4
4.2
4.0
3.8
3.6
4.2
4.0
3.8
3.6
5
10 15 20 25 30 35 40 45 50
5
10 15 20 25 30 35 40 45 50
TOTAL POWER SUPPLY VOLTAGE (V)
TOTAL POWER SUPPLY VOLTAGE (V)
Figure 87.
Figure 88.
Power Supply Current vs
Total Power Supply Voltage
RL = 10kΩ
Full Power Bandwidth vs
Frequency
VS = ±18V, RL = 2kΩ
2
0
5.0
4.8
4.6
4.4
-2
-4
-6
-8
0 dB = 1 V
P-P
4.2
4.0
3.8
3.6
-10
-12
-14
-16
-18
1
10 100 1k 10k 100k 1M 10M 100M
FREQUENCY (Hz)
5
10 15 20 25 30 35 40 45 50
TOTAL POWER SUPPLY VOLTAGE (V)
Figure 89.
Figure 90.
Gain Phase vs Frequency
VS = ±18V, RL = 2kΩ
180
160
140
120
100
80
60
40
20
0
-20
10
1000
100000
10000000
1000000 100000000
100
10000
FREQUENCY (Hz)
Figure 91.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Small-Signal Transient Response
AV = 1, CL = 10pF
Small-Signal Transient Response
AV = 1, CL = 100pF
D: 0.00s
D: 0.00V
D: 0.00s
D: 0.00V
@: -1.01 ms @: -80.0 mV
@: -1.01 ms @: -80.0 mV
1
1
Ch1 50.0 mV
M 200 ns
A
Ch1 2.00 mV
Ch1 50.0 mV
M 200 ns
A Ch1 2.00 mV
50.40%
50.40%
Figure 92.
Figure 93.
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APPLICATION INFORMATION
DISTORTION MEASUREMENTS
The vanishingly low residual distortion produced by LME49870 is below the capabilities of all commercially
available equipment. This makes distortion measurements just slightly more difficult than simply connecting a
distortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additional
resistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49870’s low residual distortion is an input referred internal error. As shown in Figure 94, adding the 10Ω
resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain.
The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop
gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means that
measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the
value of R1 low as shown in Figure 94.
This technique is verified by duplicating the measurements with high closed loop gain and/or making the
measurements at high frequencies. Doing so produces distortion components that are within the measurement
equipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above described
circuit connected to an Audio Precision System Two Cascade.
R2
1000W
-
LME49870
R1
10W
Distortion Signal Gain = 1+(R2/R1)
+
Analyzer Input
Generator Output
Audio Precision
System Two
Cascade
Actual Distortion = AP Value/100
Figure 94. THD+N and IMD Distortion Test Circuit
The LME49870 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF
will cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is
to put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output is
accidentally shorted.
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Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for
power line noise.
Figure 95. Noise Measurement Circuit - Total Gain: 115 dB @f = 1 kHz
Input Referred Noise Voltage: en = V0/560,000 (V)
Figure 96. RIAA Preamp Voltage Gain, RIAA
Figure 97. Flat Amp Voltage Gain vs Frequency
Deviation
vs Frequency
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SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
www.ti.com
TYPICAL APPLICATIONS
AV = 34.5
F = 1 kHz
En = 0.38 μV
A Weighted
Figure 98. NAB Preamp
Figure 99. NAB Preamp Voltage Gain vs Frequency
VO = V1 + V2 − V3 − V4
VO = V1–V2
Figure 100. Balanced to Single Ended Converter
Figure 101. Adder/Subtracter
Figure 102. Sine Wave Oscillator
24
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SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
Illustration is f0 = 1 kHz
Illustration is f0 = 1 kHz
Figure 103. Second Order High Pass Filter
Figure 104. Second Order Low Pass Filter
(Butterworth)
(Butterworth)
Illustration is f0 = 1 kHz, Q = 10, ABP = 1
Figure 105. State Variable Filter
Figure 106. AC/DC Converter
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Figure 107. 2 Channel Panning Circuit (Pan Pot)
Figure 108. Line Driver
Illustration is:
fL = 32 Hz, fLB = 320 Hz
fH =11 kHz, fHB = 1.1 kHz
Figure 109.
Figure 110. Tone Control
26
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SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
Av = 35 dB
En = 0.33 μV
S/N = 90 dB
f = 1 kHz
A Weighted
A Weighted, VIN = 10 mV
@f = 1 kHz
Figure 111. RIAA Preamp
Illustration is:
V0 = 101(V2 − V1)
Figure 112. Balanced Input Mic Amp
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Figure 113. 10 Band Graphic Equalizer
fo (Hz)
32
C1
C2
R1
R2
0.12μF
0.056μF
0.033μF
0.015μF
8200pF
3900pF
2000pF
1100pF
510pF
4.7μF
75kΩ
68kΩ
62kΩ
68kΩ
62kΩ
68kΩ
68kΩ
62kΩ
68kΩ
51kΩ
500Ω
510Ω
510Ω
470Ω
470Ω
470Ω
470Ω
470Ω
510Ω
510Ω
64
3.3μF
125
250
500
1k
1.5μF
0.82μF
0.39μF
0.22μF
0.1μF
2k
4k
0.056μF
0.022μF
0.012μF
8k
16k
330pF
28
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SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
+15V
0.1 mF
1 kW
1 kW
-
INPUT
LME49870
+
200W
200W
This application uses two op
amps in parallel for higher current
drive.
To
Headphone
-
LME49870
+
0.1 mF
-15V
Figure 114. Headphone Amplifier
20 pF
9.76 kW
BALANCE
TRIM
500W
10 kW
-
INPUT
4.99 kW
LME49870
D1
OUTPUT
+
S1
S2
D2
4.75 kW
4.75 kW
1 kW
DG188
TTL
IN
OFFSET
TRIM
+VCC
Figure 115. High Performance Synchronous Demodulator
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0.1 mF
100W
100 kW
-
OUTPUT
LME49870
+
NOTE: Use metal film resistors and plastic
film capacitor. Circuit must be well
shielded to achieve low noise.
Dexter 1M
Thermopile
Detector
Responsivity approx. 2.5X104V/W
Output Noise approx. 30 mVrms, 0.1 Hz to 10 Hz
Figure 116. Long-Wavelength Infrared Detector Amplifier
30
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SNAS413C –SEPTEMBER 2007–REVISED APRIL 2013
REVISION HISTORY
Rev
1.0
1.1
1.2
1.3
C
Date
Description
09/20/07
09/27/07
12/20/07
01/14/08
04/04/13
Initial release.
Updated Notes 1–7 (per TI standard).
Deleted all Crosstalk vs Frequency curves.
Edited some graphics.
Changed layout of National Data Sheet to TI format.
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
LME49870MA/NOPB
LME49870MAX/NOPB
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Top-Side Markings
Samples
Drawing
Qty
(1)
(2)
(3)
(4)
ACTIVE
SOIC
SOIC
D
8
8
95
Green (RoHS
& no Sb/Br)
CU SN
CU SN
Level-1-260C-UNLIM
L49870
MA
ACTIVE
D
2500
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
-40 to 85
L49870
MA
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LME49870MAX/NOPB
SOIC
D
8
2500
330.0
12.4
6.5
5.4
2.0
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Apr-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC
SPQ
Length (mm) Width (mm) Height (mm)
349.0 337.0 45.0
LME49870MAX/NOPB
D
8
2500
Pack Materials-Page 2
IMPORTANT NOTICE
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相关型号:
LME49870MA/NOPB
44V Single High Performance, High Fidelity Audio Operational Amplifier 8-SOIC -40 to 85
TI
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