LMH6658MM/NOPB [TI]
270MHz 单电源、单路和双路运算放大器 | DGK | 8 | -40 to 85;
| 型号： | LMH6658MM/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 270MHz 单电源、单路和双路运算放大器 | DGK | 8 | -40 to 85 放大器 光电二极管 运算放大器 放大器电路 |
| 文件： | 总29页 (文件大小：1446K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMH6657, LMH6658
www.ti.com
SNOSA35F –AUGUST 2002–REVISED MARCH 2013
LMH6657/LMH6658 270MHz Single Supply, Single & Dual Amplifiers
Check for Samples: LMH6657, LMH6658
1
FEATURES
DESCRIPTION
The LMH6657/6658 are low-cost operational
amplifiers that operate from a single supply with input
voltage range extending below the V−. Based on easy
to use voltage feedback topology and boasting fast
slew rate (700V/µs) and high speed (140MHz
GBWP), the LMH6657 (Single) and LMH6658 (dual)
can be used in high speed large signal applications.
2
VS = 5V, TA = 25°C, RL = 100Ω (Typical Values
Unless Specified)
•
•
•
•
•
•
−3dB BW (AV = +1) 270MHz
Supply Voltage Range 3V to 12V
Slew Rate, (VS = ±5V) 700V/µs
Supply Current 6.2mA/amp
Output Current +80/−90mA
These
applications
include
instrumentation,
communication devices, set-top boxes, etc.
Input Common Mode volt. 0.5V Beyond V−,
With a -3dB BW of 100MHz (AV = +2) and DG & DP
of 0.03% & 0.10° respectively, the LMH6657/6658
are well suited for video applications. The output
stage can typically supply 80mA into the load with a
swing of about 1V from either rail.
1.7V from V+
•
Output Voltage Swing (RL = 2kΩ) 0.8V from
Rails
•
•
•
•
•
•
•
•
•
•
Input Voltage Noise 11nV/√Hz
Input Current Noise 2.1pA√Hz/
DG Error 0.03%
For Industrial applications, the LMH6657/6658 are
excellent cost-saving choices. Input referred voltage
noise is low and the input voltage can extend below
V− to ease amplification of low level signals that could
be at or near the system ground. With low distortion
and fast settling, LMH6657/6658 can provide
buffering for A/D and D/A applications.
DP Error 0.10°
THD (5MHz) −55dBc
Settling Time (0.1%) 37ns
Fully Characterized for 5V, and ±5V
Output Overdrive Recovery 18ns
Output Short Circuit Protected(1)
The LMH6657/6658 versatility and ease of use is
extended even further by offering these high slew
rate , high speed Op Amps in miniature packages
such as SOT-23-5, SC70, SOIC-8, and VSSOP-8.
Refer to the Ordering Information section for
packaging options available for each device.
No Output Phase Reversal with CMVR
Exceeded
APPLICATIONS
•
•
•
•
•
CD/DVD ROM
ADC Buffer Amp
Portable Video
Current Sense Buffer
Portable Communications
(1) Short Circuit Test is a momentary test.
See Note 7 under Absolute Maximum Ratings.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2002–2013, Texas Instruments Incorporated
LMH6657, LMH6658
SNOSA35F –AUGUST 2002–REVISED MARCH 2013
www.ti.com
Connection Diagram
1
8
+
5
+
1
V
OUT A
V
OUTPUT
A
-
+
2
3
4
7
6
5
-IN A
+IN A
OUT B
-IN B
-
2
V
-
+
B
4
3
-IN
+IN
+
-
-
+IN B
V
Figure 1. SOT-23-5/SC70-5 (LMH6657)
Top View
Figure 2. SOIC-8/VSSOP-8 (LMH6658)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
ESD Tolerance
Human Body Model
Machine Model
2KV(3)
200V(4)
VIN Differential
±2.5V
Output Short Circuit Duration
See(5)(6)
Input Current
±10mA
Supply Voltage (V+ - V−)
Voltage at Input/Output pins
Soldering Information
12.6V
V+ +0.8V, V− −0.8V
Infrared or Convection (20 sec.)
Wave Soldering (10 sec.)
235°C
260°C
Storage Temperature Range
Junction Temperature(7)
−65°C to +150°C
+150°C
(1) Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human body model, 1.5kΩ in series with 100pF.
(4) Machine Model, 0Ω in series with 200pF.
(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
(6) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(7) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
Operating Ratings(1)
Supply Voltage (V+ – V−)
Operating Temperature Range(2)
3V to 12V
−40°C to +85°C
478°C/W
(2)
Package Thermal Resistance (θJA
)
SC70
SOT-23–5
VSSOP-8
SOIC-8
265°C/W
235°C/W
190°C/W
(1) Absolute maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
2
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Product Folder Links: LMH6657 LMH6658
LMH6657, LMH6658
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SNOSA35F –AUGUST 2002–REVISED MARCH 2013
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL = 100Ω (or as
specified) tied to V+/2. Boldface limits apply at the temperature extremes.
Symbol
GB
Parameter
Gain Bandwidth Product
−3dB BW
Conditions
VOUT < 200mVPP
Min(1)
Typ(2)
140
Max(1)
Units
MHz
SSBW
AV = +1, VOUT = 200mVPP
220
270
MHz
AV = +2 or −1, VOUT = 200mVPP
100
GFP
GFR
Frequency Response Peaking
Frequency Response Rolloff
AV = +2, VOUT = 200mVPP
DC to 100MHz
,
1.5
dB
dB
AV = +2, VOUT = 200mVPP
DC to 100MHz
,
0.5
LPD1°
GF0.1dB
PBW
DG
1° Linear Phase Deviation
0.1dB Gain Flatness
Full Power Bandwidth
Differential Gain
AV = +2, VOUT = 200mVPP, ±1°
AV = +2, ±0.1dB, VOUT = 200mVPP
−1dB, VOUT = 3VPP, AV = −1
30
13
MHz
MHz
MHz
%
55
NTSC, VCM = 2V, RL = 150Ω to V+/2,
0.03
Pos. Video Only
DP
Differential Phase
NTSC, VCM = 2V, RL=150Ω to V+/2 Pos.
Video Only
0.1
deg
ns
Time Domain Response
tr
Rise and Fall Time
AV = +2, VOUT = 500mVPP
AV = −1, VOUT = 500mVPP
AV = +2, VOUT = 500mVPP
VO = 2VPP, ±0.1%, RL = 500Ω to V+/2,
AV = −1
3.3
3.4
18
OS
ts
Overshoot, Undershoot
Settling Time
%
37
ns
Slew Rate(3)
AV = −1, VO = 3VPP
470
420
(4)
SR
V/µs
(4)
AV = +2, VO = 3VPP
Distortion and Noise Response
HD2
HD3
THD
Vn
2nd Harmonic Distortion
3rd Harmonic Distortion
Total Harmonic Distortion
Input-Referred Voltage Noise
f = 5MHz, VO = 2VPP, AV = -1
f = 5MHz, VO = 2VPP, AV = -1
f = 5MHz, VO = 2VPP, AV = -1
f = 100KHz
−70
−57
−55.5
11
dBc
dBc
dBc
nV/√Hz
f = 1KHz
19
In
Input-Referred Current Noise
f = 100KHz
2.1
pA/√Hz
f = 1KHz
7.5
XTLKA
Cross-Talk Rejection (LMH6658) f = 5MHz, RL (SND) = 100Ω
69
dB
RCV: RF = RG = 1k
Static, DC Performance
AVOL
Large Signal Voltage Gain
VO = 1.25V to 3.75V,
RL = 2k to V+/2
85
75
70
95
85
VO = 1.5V to 3.5V,
dB
RL = 150Ω to V+/2
VO = 2V to 3V,
80
RL = 50Ω to V+/2
CMVR
VOS
Input Common-Mode Voltage
Range
CMRR ≥ 50dB
−0.2
−0.1
−0.5
3.3
±1.1
V
3.0
2.8
Input Offset Voltage
±5
±7
mV
(1) All limits are guaranteed by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the "worst case" of the rising and falling slew rates.
(4) Output Swing not limited by Slew Rate limit.
Copyright © 2002–2013, Texas Instruments Incorporated
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www.ti.com
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = 0V, VCM = VO = V+/2, and RL = 100Ω (or as
specified) tied to V+/2. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min(1)
Typ(2)
Max(1)
Units
TC VOS
Input Offset Voltage Average
Drift
See(5)
See(6)
±2
μV/C
IB
Input Bias Current
−5
−20
−30
μA
nA/°C
nA
TC IB
IOS
Input Bias Current Average Drift See(5)
Input Offset Current
0.01
50
300
500
CMRR
Common Mode Rejection Ratio
Positive Power Supply Rejection V+ = 4.5V to 5.5V, VCM = 1V
Ratio
VCM Stepped from 0V to 3.0V
72
72
82
82
dB
dB
+PSRR
IS
Supply Current (per channel)
No load
6.2
8.5
10
mA
Miscellaneous Performance
VOH
Output Swing
High
RL = 2k to V+/2
4.10
3.8
4.25
4.19
4.15
800
870
885
RL = 150Ω to V+/2
RL = 75Ω to V+/2
RL = 2k to V+/2
4.00
3.70
V
3.85
3.50
VOL
Output Swing
Low
900
1100
RL = 150Ω to V+/2
R L = 75Ω to V+/2
970
1200
mV
990
1250
IOUT
ISC
Output Current
Output Short CircuitCurrent(7)
VOUT = 1V from either rail
Sourcing to V+/2
±40
+85, −105
mA
mA
100
80
155
Sinking to V+/2
100
220
80
RIN
CIN
Common Mode Input Resistance
3
MΩ
pF
Ω
Common Mode Input
Capacitance
1.8
ROUT
Output Impedance
f = 1MHz, AV = +1
0.06
(5) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(6) Positive current corresponds to current flowing into the device.
(7) Short circuit test is a momentary test. See Note 6 under Absolute Maximum Ratings.
±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as
specified) tied to 0V. Boldface limits apply at the temperature extremes.
Symbol
GB
Parameter
Gain Bandwidth Product
−3dB BW
Conditions
VOUT < 200mVPP
Min(1)
Typ(2)
Max(1)
Units
140
MHz
SSBW
AV = +1, VOUT = 200mVPP
220
270
MHz
dB
AV = +2 or −1, VOUT = 200mVPP
100
GFP
Frequency Response Peaking
Frequency Response Rolloff
1° Linear Phase Deviation
AV = +2, VOUT = 200mVPP
DC to 100MHz
,
1.0
GFR
LPD1°
AV = +2, VOUT = 200mVPP
DC to 100MHz
,
0.9
30
dB
AV = +2, VOUT = 200mVPP, ±1°
MHz
(1) All limits are guaranteed by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
4
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Product Folder Links: LMH6657 LMH6658
LMH6657, LMH6658
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SNOSA35F –AUGUST 2002–REVISED MARCH 2013
±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as
specified) tied to 0V. Boldface limits apply at the temperature extremes.
Symbol
GF0.1dB
PBW
Parameter
0.1dB Gain Flatness
Full Power Bandwidth
Differential Gain
Conditions
Min(1)
Typ(2)
Max(1)
Units
MHz
MHz
%
AV = +2, ±0.1dB, VOUT = 200mVPP
−1dB, VOUT = 8VPP, AV = −1
20
30
DG
NTSC, RL = 150Ω, Pos. or Neg. Video
NTSC,RL = 150Ω, Pos. or Neg. Video
0.03
0.1
DP
Differential Phase
deg
Time Domain Response
tr
Rise and Fall Time
AV = +2, VOUT = 500mVPP
AV = −1, VOUT = 500mVPP
AV = +2, VOUT = 500mVPP
3.3
3.3
16
ns
OS
ts
Overshoot, Undershoot
Settling Time
%
VO = 5VPP, ±0.1%, RL =500Ω,
AV = −1
35
ns
SR
Slew Rate(3)
AV = −1, VO = 8VPP
700
500
V/µs
AV = +2, VO = 8VPP
Distortion and Noise Response
HD2
HD3
THD
Vn
2nd Harmonic Distortion
3rd Harmonic Distortion
Total Harmonic Distortion
Input-Referred Voltage Noise
f = 5MHz, VO = 2VPP, AV = -1
f = 5MHz, VO = 2VPP, AV = -1
f = 5MHz, VO = 2VPP, AV = -1
f = 100KHz
−70
−57
−55.5
11
dBc
dBc
dBc
nV/√Hz
f = 1KHz
19
In
Input-Referred Current Noise
f = 100KHz
2.1
pA/√Hz
f = 1KHz
7.5
XTLKA
Cross-Talk Rejection (LMH6658) f = 5MHz, RL (SND) = 100Ω
69
dB
RCV: RF = RG = 1k
Static, DC Performance
AVOL
Large Signal Voltage Gain
VO = −3.75V to 3.75V, RL = 2k
VO = −3.5V to 3.5V, RL = 150Ω
VO = −3V to 3V, RL = 50Ω
CMRR ≥ 50dB
87
80
75
100
90
dB
V
85
CMVR
Input Common-Mode Voltage
Range
−5.2
−5.1
−5.5
3.0
3.3
2.8
VOS
Input Offset Voltage
±1.0
±5
±7
mV
μV/C
μA
TC VOS
IB
Input Offset Voltage Average Drift See(4)
±2
Input Bias Current
See(5)
−5
−20
−30
TCIB
IOS
Input Bias Current Average Drift
Input Offset Current
See(4)
0.01
50
nA/°C
nA
300
500
CMRR
Common ModeRejection Ratio
Positive Power Supply Rejection V+ = 4.5V to 5.5V, VCM = −4V
VCM Stepped from −5V to 3.0V
75
75
84
82
dB
dB
+PSRR
Ratio
−PSRR
Negative Power Supply Rejection V− = −4.5V to −5.5V
78
85
dB
Ratio
IS
Supply Current (per channel)
No load
6.5
9.0
11
mA
Miscellaneous Performance
(3) Slew rate is the "worst case" of the rising and falling slew rates.
(4) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
Copyright © 2002–2013, Texas Instruments Incorporated
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±5V Electrical Characteristics (continued)
Unless otherwise specified, all limits guaranteed for at TJ = 25°C, V+ = 5V, V− = −5V, VCM = VO, and RL = 100Ω (or as
specified) tied to 0V. Boldface limits apply at the temperature extremes.
Symbol
VOH
Parameter
Conditions
Min(1)
Typ(2)
Max(1)
Units
Output Swing
RL = 2k
4.10
4.25
High
3.80
RL = 150Ω
RL = 75Ω
RL = 2k
4.00
3.70
4.20
4.18
V
3.85
3.50
VOL
Output Swing
Low
−4.05
−3.80
−4.19
−4.05
−4.00
RL = 150Ω
R L = 75Ω
−3.90
−3.65
V
−3.80
−3.50
IOUT
ISC
Output Current
Output Short Circuit Current(6)
VOUT = 1V from either rail
Sourcing to Ground
±45
+100, −110
mA
mA
120
100
180
Sinking to Ground
120
230
100
RIN
CIN
Common Mode Input Resistance
4
MΩ
pF
Ω
Common Mode Input
Capacitance
1.8
ROUT
Output Impedance
f = 1MHz, AV = +1
0.06
(6) Short circuit test is a momentary test. See Note 6 under Absolute Maximum Ratings.
6
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SNOSA35F –AUGUST 2002–REVISED MARCH 2013
Typical Performance Characteristics
Non-Inverting Frequency Response,
Gain
Inverting Frequency Response,
Gain
A
= -1
V
A
= -2
V
0
0
A
= +10
-1
-1
V
A
= -10
V
A
V
= +5
-3
-5
-3
-5
-7
A
= -5
A
= +2
V
V
A
= +1
V
V
= ±2.5V
V = ±2.5V
S
S
R
= 100W
R
= 100W
L
L
-7
V
= 200mV
V
= 200mV
OUT
PP
OUT
PP
1M
10M
100M
500M
1M
10M
100M
500M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 3.
Figure 4.
Non-Inverting Frequency Response, Phase
Inverting Frequency Response, Phase
0
0
A
V
= -2
A
V
= +1
A
= -10
V
-50
-100
-150
-200
-50
-100
-150
-200
A
= +10
V
A
= -1
V
A
= -5
V
A
= +5
V
A
= +2
V
A
V
= -1
V
= ±2.5V
V
= ±2.5V
S
S
A
V
= -2
R
L
= 100W
R
L
= 100W
A
V
= -5
V
= 200mV
V
= 200mV
OUT
PP
OUT
PP
1M
10M
100M
500M
1M
10M
100M
500M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 5.
Figure 6.
Open Loop Gain/Phase vs. Frequency
Unity Gain Frequency vs. VCM
140
130
120
110
V
= ±5V
S
25°C
R
= 100W
L
100
80
60
40
20
0
PHASE
85°C
-40°C
fm = 35.2°
20
GAIN
10
0
133MHz
V
= ±5V
S
R
= 100W
L
100
100k
1M
10M
100M
1G
-5 -4 -3 -2 -1
0
1
2
3
4
5
FREQUENCY (Hz)
V
(V)
CM
Figure 7.
Figure 8.
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Typical Performance Characteristics (continued)
Phase Margin vs. VCM
Output vs. Input
45
40
35
30
25
20
5
4.5
4
V
= ±2.5V, A = -1
V
= ±5V
S
V
S
R
= 100W
R
L
= 100W
L
f = 50MHz
-40°C
f = 40MHz
f = 30MHz
f = 20MHz
3.5
3
2.5
2
25°C
85°C
1.5
1
f = 60MHz
f = 70MHz
0.5
0
f = 80MHz
0.5
-5 -4 -3 -2 -1
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
V
(V)
INPUT (V )
PP
CM
Figure 9.
Figure 10.
CMRR vs. Frequency
Output vs. Input
100
90
80
70
60
50
40
30
20
10
9
f = 20MHz
V = ±5V
S
V
A
= ±5V
= -1
S
V
f = 1MHz
8
R
= 100W
L
7
f = 40MHz
f = 50MHz
f = 30MHz
6
5
4
3
2
f = 60MHz
f = 70MHz
1
0
f = 80MHz
1M
10M
1k
10k
100k
100M
5
7
)
8
9
10
1
2
3
6
4
FREQUENCY (Hz)
INPUT (V
PP
Figure 11.
Figure 12.
PSRR vs. Frequency
DG/DP vs. IRE
90
100
0.03
R
R
= R = 750W
+PSRR
F
L
G
0.025
0.02
0.015
0.01
0.005
0
80
70
60
50
= 150W
V
= ±5V
S
75
NTSC
-PSRR
50
25
DG
40
30
DP
-0.005
-0.01
20
0
10 100
10M
1k 10k 100k 1M
FREQUENCY (Hz)
Figure 13.
100M
-100 -80
-20
0
-40
20 40 60 80
100
-60
IRE (%)
Figure 14.
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Typical Performance Characteristics (continued)
Noise vs. Frequency
Crosstalk Rejection vs. Frequency
120
110
100
90
70
140
120
100
60
50
80
70
60
50
40
80
60
40
20
0
40
30
20
10
VOLTAGE
V
= ±5V
S
CURRENT
SND: R = 100W
L
30
20
RCV = R = R = 1k
F
G
0
100k
10M
100
10k
1M
100M
1k
10
1k
10k
100
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 15.
Figure 16.
Output Impedance vs. Frequency
HD vs. VOUT
-40
-50
100
f = 500KHz
A
= +1
V
A
V
= -1
V
S
10
1
= ±5V
= 100W
THD
R
L
-60
HD3
-70
0.1
-80
HD2
0.01
-90
-100
0.001
100
4
5
7
8
0
1
2
3
6
9
1k
100M
100k 1M 10M
1G
10k
V
(V )
OUT PP
FREQUENCY (Hz)
Figure 17.
Figure 18.
HD vs. VOUT
THD vs. VOUT
-40
-45
-50
-55
-20
-30
-40
-50
-60
-70
-80
-90
-100
V
= ±2.5V
= +2
THD
S
V
A
10MHz, 150W
10MHz, 1kW
HD3
-60
-65
-70
HD2
f = 5MHz
1MHz, 150W
A
V
V
S
= -1
-75
-80
-85
= ±5V
R
L
= 100W
1MHz, 1kW
2.5
0
1
2
3
4
5
6
7
8
9
0.5
0
1
1.5
(V
2
3
V
(V )
OUT PP
V
)
OUT PP
Figure 19.
Figure 20.
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Typical Performance Characteristics (continued)
HD vs. Frequency
HD vs. Frequency
-20
-20
V
A
V
= 2V
PP
OUT
V
A
V
= 5V
PP
OUT
= -1
V
S
-30
-40
= -1
-30
-40
V
S
THD
THD
= ±5V
= ±5V
R
= 100W
L
R
= 100W
L
-50
-60
-70
-80
-90
-50
-60
-70
-80
-90
HD2
HD2
HD3
HD3
100
1k
10k
100k
100
1k
10k
100k
FREQUENCY (KHz)
FREQUENCY (KHz)
Figure 21.
Figure 22.
VOUT vs. ISOURCE
VOUT vs. ISINK
10
10
V
= ±2.5V
V
= ±2.5V
85°C
S
S
125°C
125°C
85°C
25°C
-40°C
125°C
-40°C
125°C
25°C
85°C
-40°C
1
1
-40°C
0.1
10
1
0.1
10
1
100
(mA)
150
200
250
0
50
200
0
50
100
150
(mA)
I
I
OUT
OUT
Figure 23.
Figure 24.
VOUT vs. ISOURCE
VOUT vs. ISINK
V
= ±5V
S
V
= ±5V
S
125°C
85°C
125°C
25°C
-40°C
-40°C
85°C
25°C
25°C
85°C
-40°C
125°C
125°C
0.1
0.1
50
100
(mA)
150
200
0
0
50
100
150
200
250
I
OUT
I
(mA)
OUT
Figure 25.
Figure 26.
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Typical Performance Characteristics (continued)
Short Circuit Current
Short Circuit Current
250
200
180
160
140
120
100
80
-40°C
25°C
200
25°C
85°C, 125°C
150
100
50
85°C, 125°C
60
-40°C
40
20
0
0
2
4
6
8
10
12
14
2
4
6
8
14
10
12
V
(V)
V
S
(V)
S
Figure 27.
Figure 28.
Settling Time vs. Output Step Amplitude
40
Settling Time vs. Output Step Amplitude
40
0.1%
1%
0.1%
35
35
30
25
20
15
10
30
25
20
1%
A
V
= -1
A
V
= -1
V
S
V
15
10
= ±2.5V
= 500W
= ±5V
= 500W
S
R
R
L
L
0
1
2
3
4
5
6
2.5
0
0.5
1
2
1.5
V
(V )
OUT PP
V
(V )
OUT PP
Figure 29.
0.1% Settling Time vs. Cap Load
Figure 30.
ΔVOS vs. VOUT
140
+4
+2
0
A
V
= -1
V
S
L
85°C
= 10V
120
100
Z
= 500W || C
L
R
= 20W
SERIES
25°C
-40°C
-2
-4
-6
80
60
40
20
0
POSITIVE
NEGATIVE
V
= ±2.5V
S
-8
R
= 150W
L
-10
-2
0
1
-1
10
100
1k
10k
2
C
(pF)
V
(V)
OUT
L
Figure 31.
Figure 32.
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Typical Performance Characteristics (continued)
ΔVOS vs. VOUT
IS /Amp vs. VS
8
7
6
5
4
3
2
1
0
2
1
85°C
85°C
25°C
25°C
0
-1
-2
-3
-4
-5
-6
-7
-8
-40°C
-40°C
V
= ±5V
S
-
R
= 150W
V
= V +0.5V
L
CM
2
4
6
10
12
14
-5 -4 -3 -2 -1
0
1
2
3
4
5
8
V
S
(V)
V
(V)
OUT
Figure 33.
IS/Amp vs. VCM
Figure 34.
IS/Amp vs. VCM
10
9
8
7
85°C
9
8
7
6
85°C
25°C
-40°C
25°C
6
5
-40°C
5
4
3
2
1
4
3
2
V
S
= ±5V
V
= ±2.5V
S
-6 -5 -4 -3 -2 -1
0
1
2
3
4
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
V
(V)
CM
V
CM
(V)
Figure 35.
Figure 36.
VOS vs. VS (for 3 Representative Units)
VOS vs. VS (for 3 Representative Units)
0
0
25°C
-40°C
UNIT 1
-0.5
-1
-0.5
-1
UNIT 1
-1.5
-2
-1.5
-2
UNIT 2
UNIT 2
UNIT 3
UNIT 3
-2.5
-3
-2.5
-3
4
2
8
10
6
14
12
2
4
8
10
6
12
14
V
(V)
V (V)
S
S
Figure 37.
Figure 38.
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Typical Performance Characteristics (continued)
VOS vs. VS (for 3 Representative Units)
VOS vs. VCM (A Typical Unit)
-1.1
0
85°C
UNIT 1
-1.2
-1.3
-1.4
-0.5
-1
85°C
-40°C
-1.5
-1.6
-1.5
-2
UNIT 2
25°C
-1.7
-1.8
UNIT 3
-2.5
-3
V
= ±5V
S
-1.9
-6 -5 -4 -3 -2 -1
(V)
0
1
2
3
4
2
4
6
8
S
10
14
12
V
CM
V
(V)
Figure 39.
|IB| vs. VS
Figure 40.
IOS vs. VS
0.16
0.14
0.12
0.1
6
5
4
3
2
1
0
85°C
25°C
25°C
-40°C
0.08
0.06
0.04
0.02
0
-40°C
85°C
14
2
6
8
10
12
4
8
S
14
2
6
10
4
12
V
(V)
S
V
(V)
Figure 41.
Small Signal Step Response
Figure 42.
Small Signal Step Response
V
A
= ±2.5V
= +2
V
A
= ±2.5V
= +1
S
S
V
V
R
L
= 100W
R
L
= 100W
2 ns/DIV
5 ns/DIV
Figure 43.
Figure 44.
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Typical Performance Characteristics (continued)
Small Signal Step Response
Small Signal Step Response
V
A
= ±5V
= +1
S
V
V
A
= ±5V
= +2
S
V
R
= 100W
L
R
= 100W
L
5 ns/DIV
2 ns/ DIV
Figure 45.
Figure 46.
Large Signal Step Response
Large Signal Step Response
V
A
= ±2.5V
= +2
S
V
V
A
= ±5V
= +1
S
V
R
= 100W
L
R
= 100W
L
5 ns/DIV
10 ns/DIV
Figure 47.
Figure 48.
Large Signal Step Response
V
A
= ±5V
= +2
S
V
R
= 100W
L
10 ns/DIV
Figure 49.
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SNOSA35F –AUGUST 2002–REVISED MARCH 2013
APPLICATION SECTION
LARGE SIGNAL BEHAVIOR
The LMH6657/6658 is specially designed to handle large output swings, such as those encountered in video
waveforms, without being slew rate limited. With 5V supply, the LMH6657/6658 slew rate limit is larger than that
might be necessary to make full allowable output swing excursions. Therefore, the large signal frequency
response is dominated by the small signal characteristics, rather than the conventional limitation imposed by
slew rate limit.
The LMH6657/6658 input stage is designed to provide excess overdrive when needed. This occurs when fast
input signal excursions cannot be followed by the output stage. In these situations, the device encounters larger
input signals than would be encountered under normal closed loop conditions. The LMH6657/6658 input stage is
designed to take advantage of this "input overdrive" condition. The larger the amount of this overdrive, the
greater is the speed with which the output voltage can change. Here is a plot of how the output slew rate
limitation varies with respect to the amount of overdrive imposed on the input:
800
V
= ±5V
S
700
600
500
400
300
200
100
0
0.00
1.00
2.00
3.00
INPUT OVERDRIVE (V)
Figure 50. Plot Showing the Relationship Between Slew Rate and Input Overdrive
To relate the explanation above to a practical example, consider the following application example. Consider the
case of a closed loop amplifier with a gain of −1 amplifying a sinusoidal waveform. From the plot of Output vs.
Input (Typical Performance Characteristics section), with a 30MHz signal and 7VPP input signal, it can be seen
that the output will be limited to a swing of 6.9VPP. From the frequency Response plot it can be seen that the
inverting gain of −1 has a −32° output phase shift at this frequency. It can be shown that this setup will result in
about 1.9VPP differential input voltage corresponding to 650V/μs of slew rate from Figure 50, above (SR =
VO(pp)*π*f = 650V/μs). Note that the amount of overdrive appearing on the input for a given sinusoidal test
waveform is affected by the following:
•
•
•
•
Output swing
Gain setting
Input/output phase relationship for the given test frequency
Amplifier configuration (inverting or non-inverting)
Due to the higher frequency phase shift between input and output, there is no closed form solution to input
overdrive for a given input. Therefore, Figure 50 is not very useful by itself in determining the output swing.
The following plots aid in predicting the output transition time based on the amount of swing required for a given
gain setting.
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18
16
14
12
R
= 100W
A = +10, POS
V
L
A
= +10, NEG
V
A
= +1, POS
V
A
= +6, POS
V
10
8
A
= +6, NEG
6
V
A
A
= +2, POS
V
4
2
0
= +2, NEG
7.0 8.0
V
A
= +1, NEG
V
0.0 1.0
3.0 4.0 5.0 6.0
2.0
9.0
V
(V )
PP
O
Figure 51. Output 20%-80% Transition vs. Output Voltage Swing (Non-Inverting Gain)
18
A
= -10, NEG
= -10, POS
R
= 100W
V
L
16
14
12
A
V
A
= -5, NEG
= -5, POS
V
10
8
A
= -1, POS
= -1, NEG
V
A
V
6
4
2
0
A
V
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
(V
V
O
)
PP
Figure 52. Output 20%-80% Transition vs. Output Voltage Swing (Inverting Gain)
Beyond a gain of 5 or so, the LMH6657/6658 output transition would be limited by bandwidth. For example, with
a gain of 5, the −3dB BW would be around 30MHz corresponding to a rise time of about 12ns (10% - 90%).
Assuming a near linear transition, the 20%-80% transition time would be around 9ns which matches the
measured results as shown in Figure 51.
When the output is heavily loaded, output swing may be limited by current capability of the device. Refer to
Output Current Capability section, below, for more details.
Output Characteristics
OUTPUT CURRENT CAPABILITY
The LMH6657/6658 output swing for a given load can be determined by referring to the Output Voltage vs.
Output Current plots (Typical Performance Characteristics section). Characteristic Tables show the output current
when the output is 1V from either rail. The plots and table values can be used to predict closed loop continuous
value of current for a given load. If left unchecked, the output current capability of the LMH6657/6658 could
easily result in junction temperature exceeding the maximum allowed value specified under Absolute Maximum
Ratings. Proper heat sinking or other precautions are required if conditions as such, exist.
Under transient conditions, such as when the input voltage makes a large transition and the output has not had
time to reach its final value, the device can deliver output currents in excess of the typical plots mentioned above.
Plots shown in Figure 53 and 54 below depict how the output current capability improves under higher input
overdrive voltages:
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10
V
S
= ±5V
25°C
20mV
1
500mV
0.1
0
50
100
(mA)
150
200
I
OUT
Figure 53. VOUT vs. ISOURCE (for Various Overdrive)
10
V
= ±5V
S
25°C
-20mV
1
-500mV
0.1
0
50
100
150
200
250
I
(mA)
OUT
Figure 54. VOUT vs. ISINK (for Various Overdrive)
The LMH6657/6658 output stage is designed to swing within approximately one diode drop of each supply
voltage by utilizing specially designed high speed output clamps. This allows adequate output voltage swing
even with 5V supplies and yet avoids some of the issues associated with rail-to-rail output operational amplifiers.
Some of these issues are:
•
•
Supply current increases when output reaches saturation at or near the supply rails
Prolonged recovery when output approaches the rails
The LMH6657/6658 output is exceedingly well-behaved when it comes to recovering from an overload condition.
As can be seen from Figure 55 below, the LMH6657/6658 will typically recover from an output overload condition
in about 18ns, regardless of the duration of the overload.
OUTPUT
INPUT
V
S
= ±5V, A = +6, R = 1k
V F
R
= 200W, R = OPEN
G
L
20 ns/DIV
Figure 55.
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OUTPUT PHASE REVERSAL
This is a problem with some operational amplifiers. This effect is caused by phase reversal in the input stage due
to saturation of one or more of the transistors when the inputs exceed the normal expected range of voltages.
Some applications, such as servo control loops among others, are sensitive to this kind of behavior and would
need special safeguards to ensure proper functioning. The LMH6657/6658 is immune to output phase reversal
with input overload. With inputs exceeded, the LMH6657/6658 output will stay at the clamped voltage from the
supply rail. Exceeding the input supply voltages beyond the Absolute Maximum Ratings of the device could
however damage or otherwise adversely effect the reliability or life of the device.
DRIVING CAPACITIVE LOADS
The LMH6657/6658 can drive moderate values of capacitance by utilizing a series isolation resistor between the
output and the capacitive load. Typical Performance Characteristics section shows the settling time behavior for
various capacitive loads and 20Ω of isolation resistance. Capacitive load tolerance will improve with higher
closed loop gain values. Applications such as ADC buffers, among others, present complex and varying
capacitive loads to the Op Amp; best value for this isolation resistance is often found by experimentation and
actual trial and error for each application.
DISTORTION
Applications with demanding distortion performance requirements are best served with the device operating in
the inverting mode. The reason for this is that in the inverting configuration, the input common mode voltage
does not vary with the signal and there is no subsequent ill effects due to this shift in operating point and the
possibility of additional non-linearity. Moreover, under low closed loop gain settings (most suited to low
distortion), the non-inverting configuration is at a further disadvantage of having to contend with the input
common voltage range. There is also a strong relationship between output loading and distortion performance
(i.e. 1kΩ vs. 100Ω distortion improves by about 20dB @100KHz) especially at the lower frequency end where the
distortion tends to be lower. At higher frequency, this dependence diminishes greatly such that this difference is
only about 4dB at 10MHz. But, in general, lighter output load leads to reduced HD3 term and thus improves
THD.
PRINTED CIRCUIT BOARD LAYOUT AND COMPONENT VALUES SECTIONS
Generally, a good high frequency layout will keep power supply and ground traces away from the inverting input
and output pins. Parasitic capacitances on these nodes to ground will cause frequency response peaking and
possible circuit oscillations (see Application Note OA-15 for more information). Texas Instruments suggests the
following evaluation boards as a guide for high frequency layout and as an aid in device testing and
characterization:
Device
Package
SOT-23-5
SC-70
Evaluation Board PN
CLC730068
NA
LMH6657MF
LMH6657MG
LMH6658MA
LMH6658MM
8-Pin SOIC
8-Pin VSSOP
CLC730036
CLC730123
These free evaluation boards are shipped when a device sample request is placed with Texas Instruments.
Another important parameter in working with high speed/high performance amplifiers, is the component values
selection. Choosing external resistors that are large in value will effect the closed loop behavior of the stage
because of the interaction of these resistors with parasitic capacitances. These capacitors could be inherent to
the device or a by-product of the board layout and component placement. Either way, keeping the resistor values
lower, will diminish this interaction to a large extent. On the other hand, choosing very low value resistors will
load down nodes and will contribute to higher overall power dissipation.
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SNOSA35F –AUGUST 2002–REVISED MARCH 2013
REVISION HISTORY
Changes from Revision E (March 2013) to Revision F
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 18
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PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
PACKAGING INFORMATION
Orderable Device
LMH6657MF/NOPB
LMH6657MFX/NOPB
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
ACTIVE
SOT-23
SOT-23
DBV
5
5
1000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
A85A
A85A
ACTIVE
DBV
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 85
LMH6657MG
NRND
SC70
SC70
DCK
DCK
5
5
1000
1000
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
A76
A76
LMH6657MG/NOPB
ACTIVE
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
LMH6657MGX/NOPB
LMH6658MA/NOPB
LMH6658MAX/NOPB
LMH6658MM/NOPB
LMH6658MMX/NOPB
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SC70
SOIC
DCK
D
5
8
8
8
8
3000
95
Green (RoHS
& no Sb/Br)
CU SN
CU SN
CU SN
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
A76
Green (RoHS
& no Sb/Br)
LMH66
58MA
SOIC
D
2500
1000
3500
Green (RoHS
& no Sb/Br)
LMH66
58MA
VSSOP
VSSOP
DGK
DGK
Green (RoHS
& no Sb/Br)
A88A
Green (RoHS
& no Sb/Br)
A88A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
1-Nov-2013
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMH6657MF/NOPB
LMH6657MFX/NOPB
LMH6657MG
SOT-23
SOT-23
SC70
DBV
DBV
DCK
DCK
DCK
D
5
5
5
5
5
8
1000
3000
1000
1000
3000
2500
178.0
178.0
178.0
178.0
178.0
330.0
8.4
8.4
8.4
8.4
8.4
12.4
3.2
3.2
3.2
3.2
1.4
1.4
1.2
1.2
1.2
2.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
12.0
Q3
Q3
Q3
Q3
Q3
Q1
2.25
2.25
2.25
6.5
2.45
2.45
2.45
5.4
LMH6657MG/NOPB
LMH6657MGX/NOPB
LMH6658MAX/NOPB
SC70
SC70
SOIC
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Sep-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
LMH6657MF/NOPB
LMH6657MFX/NOPB
LMH6657MG
SOT-23
SOT-23
SC70
DBV
DBV
DCK
DCK
DCK
D
5
5
5
5
5
8
1000
3000
1000
1000
3000
2500
210.0
210.0
210.0
210.0
210.0
367.0
185.0
185.0
185.0
185.0
185.0
367.0
35.0
35.0
35.0
35.0
35.0
35.0
LMH6657MG/NOPB
LMH6657MGX/NOPB
LMH6658MAX/NOPB
SC70
SC70
SOIC
Pack Materials-Page 2
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