LMP2022MME/NOPB [TI]

零漂移、低噪声、抗 EMI 双通道放大器 | DGK | 8 | -40 to 125;
LMP2022MME/NOPB
型号: LMP2022MME/NOPB
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

零漂移、低噪声、抗 EMI 双通道放大器 | DGK | 8 | -40 to 125

放大器 光电二极管
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LMP2021, LMP2022  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
LMP202x Zero-Drift, Low-Noise, EMI-Hardened Amplifiers  
1 Features  
3 Description  
The LMP2021 and LMP2022 are single and dual  
precision operational amplifiers offering ultra low input  
offset voltage, near zero input offset voltage drift, very  
low input voltage noise and very high open loop gain.  
They are part of the LMP™ precision family and are  
ideal for instrumentation and sensor interfaces.  
1
(Typical Values, TA = 25°C, VS = 5 V)  
Input Offset Voltage (Typical) 0.4 µV  
Input Offset Voltage (Max) ±5 µV  
Input Offset Voltage Drift (Typical) –0.004 µV/°C  
Input Offset Voltage Drift (Max) ±0.02 µV/°C  
Input Voltage Noise, AV = 1000 11 nV/Hz  
Open Loop Gain 160 dB  
The LMP202x has only 0.004 µV/°C of input offset  
voltage drift, and 0.4 µV of input offset voltage. These  
attributes provide great precision in high accuracy  
applications.  
CMRR 139 dB  
PSRR 130 dB  
The proprietary continuous auto zero correction  
circuitry ensures impressive CMRR and PSRR,  
removes the 1/f noise component, and eliminates the  
need for calibration in many circuits.  
Supply Voltage Range 2.2 V to 5.5 V  
Supply Current (per Amplifier) 1.1 mA  
Input Bias Current ±25 pA  
With only 260 nVPP (0.1 Hz to 10 Hz) of input voltage  
noise and no 1/f noise component, the LMP202x are  
suitable for low frequency applications such as  
industrial precision weigh scales. The extremely high  
open loop gain of 160 dB drastically reduces gain  
error in high gain applications. With ultra precision  
DC specifications and very low noise, the LMP202x  
are ideal for position sensors, bridge sensors,  
pressure sensors, medical equipment and other high  
accuracy applications with very low error budgets.  
GBW 5 MHz  
Slew Rate 2.6 V/µs  
Operating Temperature Range 40°C to 125°C  
5-Pin SOT-23, 8-Pin VSSOP and 8-Pin SOIC  
Packages  
2 Applications  
Precision Instrumentation Amplifiers  
Battery Powered Instrumentation  
Thermocouple Amplifiers  
The LMP2021 is offered in 5-Pin SOT-23 and 8-Pin  
SOIC packages. The LMP2022 is offered in 8-Pin  
VSSOP and 8-Pin SOIC packages.  
Bridge Amplifiers  
Device Information(1)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
4.90 mm x 3.91 mm  
2.90 mm x 1.60 mm  
4.90 mm x 3.91 mm  
3.00 mm x 3.00 mm  
SOIC (8)  
LMP2021  
SOT-23 (5)  
SOIC (8)  
LMP2022  
VSSOP (8)  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
Bridge Amplifier  
V
A
VA = 5V  
+
200W  
1 kW  
1/2  
LMP2022  
-
EMI  
V
A
5.1 kW  
0.1%  
V
A
0.1 mF  
470 pF  
R
1
R
4
180W  
-
+
LMP2021  
ADC161S626  
280W  
-
+
R
2
R
3
V
A
5.1 kW  
0.1%  
0.1 mF  
-
1/2  
V
R
= 1/2 V  
A
LMP2022  
+
1 kW  
200W  
The LMP202x support systems with up to 24 bits of accuracy.  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
LMP2021, LMP2022  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
www.ti.com  
Table of Contents  
7.3 Feature Description................................................. 15  
7.4 Device Functional Modes........................................ 15  
Application and Implementation ........................ 17  
8.1 Application Information............................................ 17  
8.2 Typical Application .................................................. 23  
Power Supply Recommendations...................... 24  
1
2
3
4
5
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions SC-70 and  
VSSOP references from LMP2021 pinout  
descriptions............................................................ 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 Electrical Characteristics: 2.5 V ................................ 5  
6.6 Electrical Characteristics: 5 V ................................... 7  
6.7 Typical Characteristics.............................................. 9  
Detailed Description ............................................ 15  
7.1 Overview ................................................................. 15  
7.2 Functional Block Diagram ....................................... 15  
8
9
10 Layout................................................................... 24  
10.1 Layout Guidelines ................................................. 24  
10.2 Layout Example .................................................... 25  
11 Device and Documentation Support ................. 26  
11.1 Device Support .................................................... 26  
11.2 Documentation Support ........................................ 26  
11.3 Related Links ........................................................ 26  
11.4 Trademarks........................................................... 26  
11.5 Electrostatic Discharge Caution............................ 26  
11.6 Glossary................................................................ 26  
6
7
12 Mechanical, Packaging, and Orderable  
Information ........................................................... 27  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision F (December 2014) to Revision G  
Page  
Deleted SC-70 and VSSOP references from LMP2021 pinout descriptions ......................................................................... 3  
Deleted DCK and DGK packages and corrected SOT-23 pin function table for LMP2021 .................................................. 3  
Changes from Revision E (March 2013) to Revision F  
Page  
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional  
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device  
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1  
Changes from Revision D (March 2013) to Revision E  
Page  
Changed layout of National Data Sheet to TI format ........................................................................................................... 23  
2
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Copyright © 2008–2016, Texas Instruments Incorporated  
Product Folder Links: LMP2021 LMP2022  
 
LMP2021, LMP2022  
www.ti.com  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
5 Pin Configuration and Functions  
DVB Package: LMP2021  
5 Pin SOT-23  
D Package: LMP2021  
8 Pin SOIC  
D and DGK Packages: LMP2022  
8 Pin VSSOP or SOIC  
TOP VIEW  
TOP VIEW  
TOP VIEW  
1
8
+
1
8
OUT A  
5
1
V
+
N/C  
N/C  
OUT  
V
A
7
6
5
2
3
4
2
3
4
7
6
5
+
OUT B  
-IN B  
-IN A  
-IN  
V
-
-
2
3
-
V
+
B
-
+IN A  
+IN  
OUT  
N/C  
-
4
-IN  
+IN  
-
-
+IN B  
V
V
Pin Functions: LMP2021  
PIN  
LMP2021  
DBV  
I/O  
DESCRIPTION  
NAME  
D
6
3
2
4
7
1
5
8
OUT  
+IN  
-IN  
1
3
4
2
5
-
I
I
Output  
Non-Inverting Input  
Inverting Input  
O
P
P
-
V-  
Negative Supply  
Positive Supply  
V+  
N/C  
N/C  
N/C  
No Internal Connection  
No Internal Connection  
No Internal Connection  
-
-
-
-
Pin Functions: LMP2022  
PIN  
LMP2022  
I/O  
DESCRIPTION  
NAME  
D,  
DGK  
+IN A  
+IN B  
–IN A  
–IN B  
OUT A  
OUT B  
V+  
3
5
2
6
1
7
8
4
I
I
Non-Inverting input, channel A  
Non-Inverting input, channel B  
Inverting input, channel A  
Inverting input, channel B  
Output, channel A  
I
I
O
O
P
P
Output, channel B  
Positive (highest) power supply  
Negative (lowest) power supply  
V–  
Copyright © 2008–2016, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Links: LMP2021 LMP2022  
LMP2021, LMP2022  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
www.ti.com  
6 Specifications  
6.1 Absolute Maximum Ratings(1)(2)  
MIN  
MAX  
VS  
UNIT  
VIN Differential  
–VS  
Supply Voltage (VS = V+ – V)  
6.0  
V0.3  
V
V
All Other Pins  
V+ + 0.3  
Output Short-Circuit Duration to V+ or V(3)  
Junction Temperature(4)  
5
seconds  
°C  
150  
235  
260  
150  
Soldering  
Infrared or Convection (20 sec)  
Wave Soldering Lead Temperature (10 sec)  
Storage temperature range  
°C  
Information  
°C  
Tstg  
65  
°C  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate  
conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the  
test conditions, see the Electrical Characteristics Tables.  
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.  
(3) Package power dissipation should be observed.  
(4) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.  
6.2 ESD Ratings  
VALUE  
±2000  
±1000  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)  
Charged device model (CDM), per JEDEC specification JESD22-C101,  
all pins(2)  
V(ESD)  
Electrostatic discharge  
V
Machine model  
±200  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
125  
5.5  
UNIT  
°C  
Temperature Range  
Supply Voltage (VS = V+ – V)  
40  
2.2  
V
6.4 Thermal Information  
LMP2021,  
LMP2022  
LMP2021  
LMP2022  
THERMAL METRIC(1)  
UNIT  
D
DBV  
5 PINS  
164  
DGK  
8 PINS  
217  
8 PINS  
106  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
4
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Copyright © 2008–2016, Texas Instruments Incorporated  
Product Folder Links: LMP2021 LMP2022  
 
LMP2021, LMP2022  
www.ti.com  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
6.5 Electrical Characteristics: 2.5 V(1)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 2.5 V, V= 0 V, VCM = V+/2, RL >10 kto V+/2.  
PARAMETER  
Input Offset Voltage  
TEST CONDITIONS  
MIN(2)  
TYP(3)  
MAX(2)  
UNIT  
μV  
VOS  
–5  
–0.9  
5
–40°C TJ 125°C  
–10  
10  
TCVOS  
IB  
Input Offset Voltage Drift(4)  
Input Bias Current  
–0.02  
–100  
–300  
–200  
–250  
105  
0.001  
±23  
0.02  
100  
300  
200  
250  
μV/°C  
pA  
–40°C TJ 125°C  
–40°C TJ 125°C  
IOS  
Input Offset Current  
±57  
141  
pA  
dB  
CMRR  
Common Mode Rejection Ratio 0.2 V VCM 1.7 V, 0 V VCM 1.5 V  
0.2 V VCM 1.7 V, 0 V VCM 1.5 V,  
–40°C TJ 125°C  
102  
CMVR  
EMIRR  
Input Common-Mode Voltage  
Range  
Large Signal CMRR 105 dB  
0.2  
1.7  
1.5  
V
Large Signal CMRR 102 dB, –40°C TJ ≤  
125°C  
0
Electro-Magnetic Interference  
Rejection Ratio(5)  
VRF-PEAK = 100 mVP (20 dBVP)  
f = 400 MHz  
40  
48  
VRF-PEAK = 100 mVP (20 dBVP)  
f = 900 MHz  
IN+  
and  
dB  
VRF-PEAK = 100 mVP (20 dBVP)  
IN−  
67  
f = 1800 MHz  
VRF-PEAK = 100 mVP (20 dBVP)  
79  
f = 2400 MHz  
PSRR  
Power Supply Rejection Ratio  
Large Signal Voltage Gain  
2.5 V V+ 5.5 V, VCM = 0  
2.5 V V+ 5.5 V, VCM = 0 , –40°C TJ ≤  
115  
112  
130  
dB  
dB  
125°C  
2.2 V V+ 5.5 V, VCM = 0  
RL = 10 kto V+/2, VOUT = 0.5 V to 2 V  
RL = 10 kto V+/2, VOUT = 0.5 V to 2 V,  
–40°C TJ 125°C  
110  
124  
119  
130  
150  
AVOL  
RL = 2 kto V+/2, VOUT = 0.5 V to 2 V  
RL = 2 kto V+/2, VOUT = 0.5 V to 2 V,  
–40°C TJ 125°C  
120  
115  
150  
VOUT  
Output Swing High  
Output Swing Low  
Linear Output Current  
RL = 10 kto V+/2  
RL = 10 kto V+/2, –40°C TJ 125°C  
RL = 2 kto V+/2  
RL = 2 kto V+/2, –40°C TJ 125°C  
RL = 10 kto V+/2  
RL = 10 kto V+/2, –40°C TJ 125°C  
RL = 2 kto V+/2  
38  
62  
30  
58  
50  
70  
85  
mV  
from either  
rail  
115  
45  
55  
75  
RL = 2 kto V+/2, –40°C TJ 125°C  
95  
IOUT  
Sourcing, VOUT = 2 V  
30  
30  
50  
50  
mA  
Sinking, VOUT = 0.5 V  
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under  
conditions of internal self-heating where TJ > TA.  
(2) All limits are specified by testing, statistical analysis or design.  
(3) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and  
will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production  
material.  
(4) Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature  
change.  
(5) The EMI Rejection Ratio is defined as EMIRR = 20Log ( VRF-PEAK/ΔVOS).  
Copyright © 2008–2016, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links: LMP2021 LMP2022  
LMP2021, LMP2022  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
www.ti.com  
Electrical Characteristics: 2.5 V(1) (continued)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 2.5 V, V= 0 V, VCM = V+/2, RL >10 kto V+/2.  
PARAMETER  
Supply Current  
TEST CONDITIONS  
Per Amplifier  
MIN(2)  
TYP(3)  
MAX(2)  
UNIT  
mA  
IS  
0.95  
1.10  
Per Amplifier, –40°C TJ 125°C  
1.37  
SR  
Slew Rate(6)  
AV = +1, CL = 20 pF, RL = 10 kΩ  
2.5  
V/μs  
VO = 2 VPP  
GBW  
GM  
Gain Bandwidth Product  
Gain Margin  
CL = 20 pF, RL = 10 kΩ  
CL = 20 pF, RL = 10 kΩ  
CL = 20 pF, RL = 10 kΩ  
Common Mode  
5
10  
MHz  
dB  
ΦM  
Phase Margin  
60  
deg  
CIN  
Input Capacitance  
12  
pF  
Differential Mode  
12  
en  
Input-Referred Voltage Noise  
Density  
f = 0.1 kHz or 10 kHz, AV = 1000  
f = 0.1 kHz or 10 kHz, AV = 100  
0.1 Hz to 10 Hz  
11  
nV/Hz  
nVPP  
15  
Input-Referred Voltage Noise  
260  
330  
350  
0.01 Hz to 10 Hz  
In  
tr  
Input-Referred Current Noise  
Recovery time  
f = 1 kHz  
fA/Hz  
µs  
to 0.1%, RL = 10 k, AV = 50,  
VOUT = 1.25 VPP Step, Duration = 50 μs  
50  
CT  
Cross Talk  
LMP2022, f = 1 kHz  
150  
dB  
(6) The number specified is the average of rising and falling slew rates and is measured at 90% to 10%.  
6
Submit Documentation Feedback  
Copyright © 2008–2016, Texas Instruments Incorporated  
Product Folder Links: LMP2021 LMP2022  
 
LMP2021, LMP2022  
www.ti.com  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
6.6 Electrical Characteristics: 5 V(1)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V= 0 V, VCM = V+/2, RL > 10 kto V+/2.  
PARAMETER  
Input Offset Voltage  
TEST CONDITIONS  
MIN(2)  
TYP(3)  
MAX(2)  
UNIT  
VOS  
–5  
0.4  
5
μV  
–40°C TJ 125°C  
–10  
10  
TCVOS  
IB  
Input Offset Voltage Drift(4)  
Input Bias Current  
–0.02  
–100  
–300  
–200  
–250  
120  
0.004  
0.02  
100  
300  
200  
250  
μV/°C  
±25  
pA  
–40°C TJ 125°C  
IOS  
Input Offset Current  
±48  
139  
pA  
dB  
–40°C TJ 125°C  
CMRR  
Common Mode Rejection Ratio  
0.2 V VCM 4.2 V, 0 V VCM 4.0 V  
0.2 V VCM 4.2 V, 0 V VCM 4.0 V,  
–40°C TJ 125°C  
115  
CMVR  
EMIRR  
Input Common-Mode Voltage  
Range  
Large Signal CMRR 120 dB  
–0.2  
0
4.2  
4.0  
V
Large Signal CMRR 115 dB, –40°C TJ  
125°C  
Electro-Magnetic Interference  
Rejection Ratio(5)  
VRF-PEAK = 100 mVP (20 dBVP)  
f = 400 MHz  
58  
64  
VRF-PEAK = 100 mVP (20 dBVP)  
f = 900 MHz  
IN+  
and  
dB  
VRF-PEAK = 100 mVP (20 dBVP)  
IN−  
72  
f = 1800 MHz  
VRF-PEAK = 100 mVP (20 dBVP)  
82  
f = 2400 MHz  
PSRR  
Power Supply Rejection Ratio  
Large Signal Voltage Gain  
2.5 V V+ 5.5 V, VCM = 0  
2.5 V V+ 5.5 V, VCM = 0, –40°C TJ ≤  
115  
112  
130  
dB  
dB  
125°C  
2.2 V V+ 5.5 V, VCM = 0  
RL = 10 kto V+/2, VOUT = 0.5 V to 4.5 V  
RL = 10 kto V+/2, VOUT = 0.5 V to 4.5 V,  
–40°C TJ 125°C  
110  
125  
120  
130  
160  
AVOL  
RL = 2 kto V+/2, VOUT = 0.5 V to 4.5 V  
RL = 2 kto V+/2, VOUT = 0.5 V to 4.5 V,  
–40°C TJ 125°C  
123  
118  
160  
VOUT  
Output Swing High  
Output Swing Low  
Linear Output Current  
RL = 10 kto V+/2  
RL = 10 kto V+/2, –40°C TJ 125°C  
RL = 2 kto V+/2  
RL = 2 kto V+/2, –40°C TJ 125°C  
RL = 10 kto V+/2  
RL = 10 kto V+/2, –40°C TJ 125°C  
RL = 2 kto V+/2  
83  
120  
65  
135  
170  
160  
204  
80  
mV  
from either  
rail  
105  
125  
158  
103  
RL = 2 kto V+/2, –40°C TJ 125°C  
IOUT  
Sourcing, VOUT = 4.5 V  
30  
30  
50  
50  
mA  
Sinking, VOUT = 0.5 V  
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under  
conditions of internal self-heating where TJ > TA.  
(2) All limits are specified by testing, statistical analysis or design.  
(3) Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and  
will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production  
material.  
(4) Offset voltage temperature drift is determined by dividing the change in VOS at the temperature extremes by the total temperature  
change.  
(5) The EMI Rejection Ratio is defined as EMIRR = 20Log ( VRF-PEAK/ΔVOS).  
Copyright © 2008–2016, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Links: LMP2021 LMP2022  
LMP2021, LMP2022  
SNOSAY9G SEPTEMBER 2008REVISED FEBRUARY 2016  
www.ti.com  
Electrical Characteristics: 5 V(1) (continued)  
Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V= 0 V, VCM = V+/2, RL > 10 kto V+/2.  
PARAMETER  
Supply Current  
TEST CONDITIONS  
Per Amplifier  
MIN(2)  
TYP(3)  
MAX(2)  
UNIT  
mA  
IS  
1.1  
1.25  
Per Amplifier, –40°C TJ 125°C  
1.57  
SR  
Slew Rate(6)  
AV = +1, CL = 20 pF, RL = 10 kΩ  
2.6  
V/μs  
VO = 2 VPP  
GBW  
GM  
Gain Bandwidth Product  
Gain Margin  
CL = 20 pF, RL = 10 kΩ  
CL = 20 pF, RL = 10 kΩ  
CL = 20 pF, RL = 10 kΩ  
Common Mode  
5
10  
MHz  
dB  
ΦM  
Phase Margin  
60  
deg  
CIN  
Input Capacitance  
12  
pF  
Differential Mode  
12  
en  
Input-Referred Voltage Noise  
Density  
f = 0.1 kHz or 10 kHz, AV= 1000  
f = 0.1 kHz or 10 kHz, AV= 100  
0.1 Hz to 10 Hz Noise  
0.01 Hz to 10 Hz Noise  
f = 1 kHz  
11  
nV/Hz  
nVPP  
15  
Input-Referred Voltage Noise  
260  
330  
350  
In  
tr  
Input-Referred Current Noise  
Input Overload Recovery time  
fA/Hz  
μs  
to 0.1%, RL = 10 k, AV = 50,  
VOUT = 2.5 VPP Step, Duration = 50 μs  
50  
CT  
Cross Talk  
LMP2022, f = 1 kHz  
150  
dB  
(6) The number specified is the average of rising and falling slew rates and is measured at 90% to 10%.  
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6.7 Typical Characteristics  
Unless otherwise noted: TA = 25°C, RL > 10 k, VS= V+ – V, VS= 5 V, VCM = VS/2.  
16  
14  
UNITS TESTED > 1700  
UNITS TESTED > 1700  
-40°C Ç T Ç 125°C  
V
= 2.5V  
14  
12  
10  
8
S
A
12  
10  
T
= 25°C  
A
V
= 2.5V  
S
V
CM  
= V /2  
S
V
= V /2  
S
CM  
8
6
4
6
4
2
2
0
0
-5 -4 -3 -2 -1  
0
1
2
3
4
5
-20  
-10  
0
10  
20  
V
(mV)  
OS  
TCV  
(nV/°C)  
OS  
Figure 1. Offset Voltage Distribution  
Figure 2. TCVOS Distribution  
16  
14  
12  
18  
UNITS TESTED = 6200  
UNITS TESTED = 6200  
16  
V
= 5V  
S
V
S
= 5V  
V
= V /2  
S
CM  
T
A
= 25°C  
14  
12  
10  
-40°C Ç T Ç 125°C  
A
V
CM  
= V /2  
S
10  
8
8
6
4
2
0
6
4
2
0
-20  
-10  
0
10  
20  
-5 -4 -3 -2 -1  
0
1
2
3
4
5
TCV  
OS  
(nV/°C)  
V
(mV)  
OS  
Figure 4. TCVOS Distribution  
Figure 3. Offset Voltage Distribution  
10  
140  
120  
V
V
= 2.5V, 5V  
= V /2  
S
CM  
S
5
100  
-PSRR  
-40°C  
80  
60  
40  
0
-5  
25°C  
+PSRR  
85°C  
125°C  
5
20  
0
-10  
10k  
FREQUENCY (Hz)  
100k  
10  
100  
1k  
1M  
5.5  
2
2.5  
3
3.5  
4
4.5  
SUPPLY VOLTAGE (V)  
Figure 6. PSRR vs. Frequency  
Figure 5. Offset Voltage vs. Supply Voltage  
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Typical Characteristics (continued)  
Unless otherwise noted: TA = 25°C, RL > 10 k, VS= V+ – V, VS= 5 V, VCM = VS/2.  
Figure 7. Input Bias Current vs. VCM  
Figure 8. Input Bias Current vs. VCM  
10  
10  
V
= 2.5V  
S
5
0
5
-40°C  
-40°C  
25°C  
0
25°C  
85°C  
85°C  
-5  
-5  
125°C  
1.4  
125°C  
-10  
-0.2  
-10  
-0.2  
0.6  
1.4  
2.2  
3
3.8  
4.6  
0.2  
0.6  
1
1.8  
COMMON MODE VOLTAGE (V)  
COMMON MODE VOLTAGE (V)  
Figure 10. Offset Voltage vs. VCM  
Figure 9. Offset Voltage vs. VCM  
1.5  
1.25  
1
100  
GAIN = 1000  
125°C  
85°C  
V
= 5V  
S
25°C  
10  
-40°C  
V
= 2.5V  
10k  
S
0.75  
5.5  
1
10  
2
2.5  
3
3.5  
4
4.5  
5
100  
1k  
100k  
SUPPLY VOLTAGE (V)  
FREQUENCY (Hz)  
Figure 11. Supply Current vs. Supply Voltage (Per Amplifier)  
Figure 12. Input Voltage Noise vs. Frequency  
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Typical Characteristics (continued)  
Unless otherwise noted: TA = 25°C, RL > 10 k, VS= V+ – V, VS= 5 V, VCM = VS/2.  
120  
180  
120  
180  
150  
100  
150  
100  
GAIN  
GAIN  
80  
120  
80  
120  
60  
40  
20  
90  
60  
30  
60  
40  
20  
90  
60  
30  
PHASE  
PHASE  
V
= 2.5V  
V = 5V  
S
S
R
= 2 kW, 10 kW, 10 MW  
R
= 2 kW, 10 kW, 10 MW  
L
L
L
0
0
0
0
C
L
= 20 pF, 50 pF, 100 pF  
C
= 20 pF, 50 pF, 100 pF  
-20  
100  
-30  
10M  
-20  
100  
-30  
10M  
100k  
FREQUENCY (Hz)  
1M  
100k  
FREQUENCY (Hz)  
1M  
1k  
10k  
1k  
10k  
Figure 13. Open Loop Frequency Response  
Figure 14. Open Loop Frequency Response  
120  
180  
160  
140  
120  
100  
80  
100  
150  
80  
120  
PHASE  
GAIN  
60  
40  
20  
90  
60  
30  
V
= 5V  
S
60  
40  
20  
0
V
= 5V  
S
R
C
= 10 kW  
L
L
V
= 2.5V  
S
0
0
= 20 pF  
T
= -40°C, 25°C, 85°C, 125°C  
A
-20  
100  
-30  
10M  
100k  
FREQUENCY (Hz)  
1M  
1k  
10k  
10  
100  
1000  
10000  
FREQUENCY (MHz)  
Figure 15. Open Loop Frequency Response Over  
Temperature  
Figure 16. EMIRR vs. Frequency  
140  
120  
100  
80  
120  
V
= 5V  
S
V
= 2.5V  
S
100  
80  
60  
40  
20  
0
f
= 2400 MHz  
RF  
f
= 2400 MHz  
RF  
f
= 1800 MHz  
RF  
f
= 1800 MHz  
RF  
60  
f
= 400 MHz  
40  
RF  
f
= 400 MHz  
RF  
f
= 900 MHz  
RF  
20  
f
= 900 MHz  
RF  
0
-40 -30 -20 -10  
0
10  
20  
30  
-40 -30 -20 -10  
0
10  
20  
30  
RF INPUT SIGNAL PEAK (dBm)  
RF INPUT SIGNAL PEAK (dBm)  
Figure 18. EMIRR vs. Input Power  
Figure 17. EMIRR vs. Input Power  
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Typical Characteristics (continued)  
Unless otherwise noted: TA = 25°C, RL > 10 k, VS= V+ – V, VS= 5 V, VCM = VS/2.  
Figure 19. Time Domain Input Voltage Noise  
Figure 20. Time Domain Input Voltage Noise  
160  
3
2.8  
2.6  
2.4  
2.2  
2
V
A
= 1 V  
= +1  
V
= 2.5V  
V
V
= 2.5V, 5V  
= V /2  
IN  
PP  
S
S
V
CM  
S
140  
120  
100  
80  
f = 10 kHz  
R
= 10 kW  
L
L
V
= 5V  
S
C
= 20 pF  
FALLING EDGE  
RISING EDGE  
60  
40  
10  
100  
1k  
10k  
100k  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
FREQUENCY (Hz)  
SUPPLY VOLTAGE (V)  
Figure 21. CMRR vs. Frequency  
Figure 22. Slew Rate vs. Supply Voltage  
160  
200  
160  
120  
R
L
= 2 kW  
R
L
= 2 kW  
125°C  
125°C  
120  
85°C  
85°C  
25°C  
25°C  
80  
40  
0
80  
40  
0
-40°C  
-40°C  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
5.5  
2
2.5  
3
3.5  
4
4.5  
5
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 23. Output Swing High vs. Supply Voltage  
Figure 24. Output Swing Low vs. Supply Voltage  
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Typical Characteristics (continued)  
Unless otherwise noted: TA = 25°C, RL > 10 k, VS= V+ – V, VS= 5 V, VCM = VS/2.  
120  
100  
80  
60  
40  
20  
0
200  
160  
120  
R
L
= 10 kW  
R
L
= 10 kW  
125°C  
-40°C  
125°C  
85°C  
85°C  
25°C  
80  
40  
0
25°C  
-40°C  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Figure 26. Output Swing Low vs. Supply Voltage  
Figure 25. Output Swing High vs. Supply Voltage  
V
A
= 5V  
S
V
= -50 V/V  
= 10 kW  
V
A
= 5V  
S
R
L
= -50 V/V  
= 10 kW  
V
R
L
ö
ö
ö
ö
2 ms/DIV  
10 ms/DIV  
Figure 27. Overload Recovery Time  
Figure 28. Overload Recovery Time  
V
A
V
= 2.5V  
= +1  
V
A
V
= 2.5V  
= +1  
S
S
V
V
= 1 V  
PP  
= 100 mV  
PP  
IN  
IN  
f = 10 kHz  
f = 10 kHz  
R
C
= 10 kW  
R
C
= 10 kW  
L
L
L
L
= 20 pF  
= 20 pF  
10 ms/DIV  
10 ms/DIV  
Figure 29. Large Signal Step Response  
Figure 30. Small Signal Step Response  
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Typical Characteristics (continued)  
Unless otherwise noted: TA = 25°C, RL > 10 k, VS= V+ – V, VS= 5 V, VCM = VS/2.  
V
A
V
= 5V  
= +1  
= 2 V  
V
A
V
= 5V  
S
S
= +1  
V
V
= 100 mV  
PP  
IN  
PP  
IN  
f = 10 kHz  
f = 10 kHz  
R
C
= 10 kW  
R
C
= 10 kW  
L
L
L
L
= 20 pF  
= 20 pF  
10 ms/DIV  
10 ms/DIV  
Figure 31. Large Signal Step Response  
Figure 32. Small Signal Step Response  
+
200  
V
V
= 2.5V  
S
V
S
= 2.5V, 5V  
180  
160  
+
(V ) -0.2  
Channel A to B  
+
(V ) -0.4  
+
140  
120  
100  
(V ) -0.6  
25°C  
-40°C  
125°C 85°C  
V
= 5V  
S
ö
ö
Channel B to A  
0.4  
0.2  
80  
60  
0
10k  
FREQUENCY (Hz)  
100k  
10  
100  
1k  
1M  
0
5
10 15 20 25 30 35 40  
OUTPUT CURRENT (mA)  
Figure 34. Cross Talk Rejection Ratio vs. Frequency  
(LMP2022)  
Figure 33. Output Voltage vs. Output Current  
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7 Detailed Description  
7.1 Overview  
The LMP202x are single and dual precision operational amplifiers with ultra low offset voltage, ultra low offset  
voltage drift, and very low input voltage noise with no 1/f and extended supply voltage range. The LMP202x offer  
on chip EMI suppression circuitry which greatly enhances the performance of these precision amplifiers in the  
presence of radio frequency signals and other high frequency disturbances.  
The LMP202x utilize proprietary auto zero techniques to measure and continuously correct the input offset error  
voltage. The LMP202x have a DC input offset voltage with a maximum value of ±5 μV and an input offset voltage  
drift maximum value of 0.02 µV/°C. The input voltage noise of the LMP202x is less than 11 nV/Hz at a voltage  
gain of 1000 V/V and has no flicker noise component. This makes the LMP202x ideal for high accuracy, low  
frequency applications where lots of amplification is needed and the input signal has a very small amplitude.  
The proprietary input offset correction circuitry enables the LMP202x to have superior CMRR and PSRR  
performances. The combination of an open loop voltage gain of 160 dB, CMRR of 142 dB, PSRR of 130 dB,  
along with the ultra low input offset voltage of only 0.4 µV, input offset voltage drift of only 0.004 µV/°C, and  
input voltage noise of only 260 nVPP at 0.1 Hz to 10 Hz make the LMP202x great choices for high gain  
transducer amplifiers, ADC buffer amplifiers, DAC I-V conversion, and other applications requiring precision and  
long-term stability. Other features are rail-to-rail output, low supply current of 1.1 mA per amplifier, and a gain-  
bandwidth product of 5 MHz.  
The LMP202x have an extended supply voltage range of 2.2 V to 5.5 V, making them ideal for battery operated  
portable applications. The LMP2021 is offered in 5-pin SOT-23 and 8-pin SOIC packages. The LMP2022 is  
offered in 8-pin VSSOP and 8-Pin SOIC packages.  
7.2 Functional Block Diagram  
7.3 Feature Description  
The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifier  
amplifies only the difference in voltage between the two inputs, which is called the differential input voltage. The  
output voltage of the op-amp Vout is given by Equation 1:  
VOUT = AOL (IN+ - IN-)  
(1)  
where AOL is the open-loop gain of the amplifier, typically around 100dB (100,000x, or 10uV per Volt).  
7.4 Device Functional Modes  
7.4.1 EMI Suppression  
The near-ubiquity of cellular, Bluetooth, and Wi-Fi signals and the rapid rise of sensing systems incorporating  
wireless radios make electromagnetic interference (EMI) an evermore important design consideration for  
precision signal paths. Though RF signals lie outside the op amp band, RF carrier switching can modulate the  
DC offset of the op amp. Also some common RF modulation schemes can induce down-converted components.  
The added DC offset and the induced signals are amplified with the signal of interest and thus corrupt the  
measurement. The LMP202x use on chip filters to reject these unwanted RF signals at the inputs and power  
supply pins; thereby preserving the integrity of the precision signal path.  
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Device Functional Modes (continued)  
Twisted pair cabling and the active front-end’s common-mode rejection provide immunity against low frequency  
noise (i.e. 60 Hz or 50 Hz mains) but are ineffective against RF interference. Figure 46 displays this. Even a few  
centimeters of PCB trace and wiring for sensors located close to the amplifier can pick up significant 1 GHz RF.  
The integrated EMI filters of LMP202x reduce or eliminate external shielding and filtering requirements, thereby  
increasing system robustness. A larger EMIRR means more rejection of the RF interference. For more  
information on EMIRR, please refer to AN-1698 (Literature Number SNOA497).  
7.4.2 Input Voltage Noise  
The input voltage noise density of the LMP202x has no 1/f corner, and its value depends on the feedback  
network used. This feature of the LMP202x differentiates this family from other products currently available from  
other vendors. In particular, the input voltage noise density decreases as the closed loop voltage gain of the  
LMP202x increases. The input voltage noise of the LMP202x is less than 11 nV/Hz when the closed loop  
voltage gain of the op amp is 1000. Higher voltage gains are required for smaller input signals. When the input  
signal is smaller, a lower input voltage noise is quite advantageous and increases the signal to noise ratio.  
Figure 35 shows the input voltage noise of the LMP202x as the closed loop gain increases.  
24  
V
S
= 5V  
f = 100 Hz  
20  
16  
12  
8
4
0
1
10  
100  
1000  
CLOSED LOOP GAIN (V/V)  
Figure 35. Input Voltage Noise Density decreases with Gain  
Figure 36 shows the input voltage noise density does not have the 1/f component.  
100  
GAIN = 100  
GAIN = 10  
GAIN = 51  
10  
GAIN = 250  
GAIN = 1000  
GAIN = 500  
1
10  
100  
1k  
10k  
FREQUENCY (Hz)  
Figure 36. Input Voltage Noise Density with no 1/f  
With smaller and smaller input signals and high precision applications with lower error budget, the reduced input  
voltage noise and no 1/f noise allow more flexibility in circuit design.  
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8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
8.1.1 Achieving Lower Noise With Filtering  
The low input voltage noise of the LMP202x, and no 1/f noise make these suitable for many applications with  
noise sensitive designs. Simple filtering can be done on the LMP202x to remove high frequency noise. Figure 37  
shows a simple circuit that achieves this.  
In Figure 37 CF and the corner frequency of the filter resulting from CF and RF will reduce the total noise.  
R
//  
IN RF  
IN  
+
-
C
F
R
R
F
IN  
Figure 37. Noise Reducing Filter for Lower Gains  
In order to achieve lower noise floors for even more noise stringent applications, a simple filter can be added to  
the op amp’s output after the amplification stage. Figure 38 shows the schematic of a simple circuit which  
achieves this objective. Low noise amplifiers such as the LMV771 can be used to create a single pole low pass  
filter on the output of the LMP202x. The noise performance of the filtering amplifier, LMV771 in this circuit, will  
not be dominant as the input signal on LMP202x has already been significantly gained up and as a result the  
effect of the input voltage noise of the LMV771 is effectively not noticeable.  
C
FILT  
R
IN  
/R  
F
R
FILT  
Lb  
+
R
FILT  
[at2021/  
[at2022  
-
R
F
-
[aë771  
hÜÇ  
+
R
IN  
Figure 38. Enhanced Filter to Further Reduce Noise at Higher Gains  
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Application Information (continued)  
Using the circuit in Figure 38 has the advantage of removing the non-linear filter bandwidth dependency which is  
seen when the circuit in Figure 37 is used. The difference in noise performance of the circuits in Figure 37 and  
Figure 38 becomes apparent only at higher gains. At voltage gains of 10 V/V or less, there is no difference  
between the noise performance of the two circuits.  
10  
A
= 40 dB  
V
1
0.1  
2-Stage Filter  
A
= 60 dB  
V
0.01  
10  
100  
1k  
10k  
3 dB FILTER BANDWIDTH (Hz)  
Figure 39. RMS Input Referred Noise vs. Frequency  
Figure 39 shows the total input referred noise vs. 3 dB corner of both filters of Figure 37 and Figure 38 at gains  
of 100V/V and 1000V/V. For these measurements and using Figure 37's circuit, RF = 49.7 kand RIN = 497.  
Value of CF has been changed to achieve the desired 3 dB filter corner frequency. In the case of Figure 38's  
circuit, RF = 49.7 kand RIN = 497, RFILT = 49.7 k, and CFILT has been changed to achieve the desired 3 dB  
filter corner frequency. Figure 39 compares the RMS noise of these two circuits. As Figure 39 shows, the RMS  
noise measured the circuit in Figure 38 has lower values and also depicts a more linear shape.  
8.1.2 Input Bias Current  
The bias current of the LMP202x behaves differently than a conventional amplifier due to the dynamic transient  
currents created on the input of an auto-zero circuit. The input bias current is affected by the charge and  
discharge current of the input auto-zero circuit. This effectivly creates a repetitive impulse current noise of 100's  
of pA. For this reason, the LMP202x is not recommeded for source impedances of 1 MΩ or greater.  
The amount of current sunk or sourced from that stage is dependent on the combination of input impedance  
(resistance and capacitance), as well as the balance and matching of these impedances across the two inputs.  
This current, integrated by the input capacitence, causes a shift in the apparent "bias current". Because of this,  
there is an apparent "bias current vs. input impedance" interaction. In the LMP202x for an input resistive  
impedance of 1 G, the shift in input bias current can be up to 40 pA. This input bias shift is caused by varying  
the input's capacitive impedance. Since the input bias current is dependent on the input impedance, it is difficult  
to estimate what the actual bias current is without knowing the end circuit and associated capacitive strays.  
Figure 40 shows the input bias current of the LMP202x and that of another commercially available amplifier from  
a competitor. As it can be seen, the shift in LMP202x bias current is much lower than that of other chopper style  
or auto zero amplifiers available from other vendors.  
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Application Information (continued)  
LMP2021/LMP2022  
Competitor A  
175  
175  
C
G
V
S
= 0, 1, 3, 5, 8, 10, 20, 50, 75, 100, 200, 500, 1000 pF  
C
= 1000 pF  
G
150  
125  
100  
75  
150  
125  
100  
75  
= 5V, V  
CM  
= V /2, R = 1 GW  
S G  
C
= 1000 pF  
C
= 20 pF  
G
G
C = 20 pF  
G
50  
50  
25  
25  
0
0
-25  
-50  
-75  
-25  
-50  
-75  
C
= 0 pF  
G
C
G
= 0 pF  
0
10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100  
TIME (s)  
TIME (s)  
Figure 40. Input Bias Current of LMP202x is lower than Competitor A  
8.1.3 Lowering the Input Bias Current  
As mentioned in the Input Bias Current section, the input bias current of an auto zero amplifier such as the  
LMP202x varies with input impedance and feedback impedance. Once the value of a certain input resistance, i.e.  
sensor resistance, is known, it is possible to optimize the input bias current for this fixed input resistance by  
choosing the capacitance value that minimizes that current. Figure 41 shows the input bias current vs. input  
impedance of the LMP202x. The value of RG or input resistance in this test is 1 G. When this value of input  
resistance is used, and when a parallel capacitance of 22 pF is placed on the circuit, the resulting input bias  
current is nearly 0 pA. Figure 41 can be used to extrapolate capacitor values for other sensor resistances. For  
this purpose, the total impedance seen by the input of the LMP202x needs to be calculated based on Figure 41.  
By knowing the value of RG, one can calculate the corresponding CG which minimizes the non-inverting input  
bias current, positive bias current, value.  
30  
18  
6
-6  
-
+
R
G
-18  
-30  
C
G
1
10  
100  
1000  
INPUT CAPACITANCE (pF)  
Figure 41. Input Bias Current vs. CG with RG = 1 G  
In a typical I-V converter, the output voltage will be the sum of DC offset plus bias current and the applied signal  
through the feedback resistor. In a conventional input stage, the inverting input's capacitance has very little effect  
on the circuit. This effect is generally on settling time and the dielectric soakage time and can be ignored. In auto  
zero amplifiers, the input capacitance effect will add another term to the output. This additional term means that  
the baseline reading on the output will be dependent on the input capacitance. The term input capacitance for  
this purpose includes circuit strays and any input cable capacitances. There is a slight variation in the capacitive  
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Application Information (continued)  
offset as the duty cycle and amplitude of the pulses vary from part to part, depending on the correction at the  
time. The lowest input current will be obtained when the impedances, both resistive and capacitive, are matched  
between the inputs. By balancing the input capacitances, the effect can be minimized. A simple way to balance  
the input impedance is adding a capacitance in parallel to the feedback resistance. The addition of this feedback  
capacitance reduces the bias current and increases the stability of the operational amplifier. Figure 42 shows the  
input bias current of the LMP202x when RF is set to 1 G. As it can be seen from Figure 42, choosing the  
optimum value of CF will help reducing the input bias current.  
156  
130  
104  
78  
C
-
F
52  
26  
0
R
F
+
1
10  
100  
1000  
FEEDBACK CAPACITANCE (pF)  
Figure 42. Input Bias Current vs. CF with RF = 1 GΩ  
The effect of bias current on a circuit can be estimated with the following:  
AV*IBIAS+*ZS - IBIAS*ZF  
(2)  
Where AV is the closed loop gain of the system and IBIAS+ and IBIASdenote the positive and negative bias  
current, respectively. It is common to show the average of these bias currents in product datasheets. If IBIAS+ and  
IBIASare not individually specified, use the IBIAS value provided in datasheet graphs or tables for this calculation.  
For the application circuit shown in Figure 46, the LMP2022 amplifiers each have a gain of 18. With a sensor  
impedance of 500for the bridge, and using the above equation, the total error due to the bias current on the  
outputs of the LMP2022 amplifier will be less than 200 nV.  
8.1.4 Sensor Impedance  
The sensor resistance, or the resistance connected to the inputs of the LMP202x, contributes to the total  
impedance seen by the auto correcting input stage.  
R
IN  
V
IN  
+
-
V
IN_DIFF  
FEEDBACK  
NETWORK  
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Application Information (continued)  
R
R
IN  
ON_SWITCH  
V
V
OUT  
IN  
INPUT  
SWITCHES  
+
C
OUT  
V
IN_DIFF  
-
Figure 43. Auto Correcting Input Stage Model  
As shown in Figure 43, the sum of RIN and RON-SWITCH will form a low pass filter with COUT during correction  
cycles. As RIN increases, the time constant of this filter increases, resulting in a slower output signal which could  
have the effect of reducing the open loop gain, AVOL, of the LMP202x. In order to prevent this reduction in AVOL in  
presence of high impedance sensors or other high resistances connected to the input of the LMP202x, a  
capacitor can be placed in parallel to this input resistance. This is shown in Figure 44.  
C
IN  
R
IN  
V
IN  
+
-
V
IN_DIFF  
FEEDBACK  
NETWORK  
C
IN  
R
ON_SWITCH  
R
IN  
V
IN  
V
OUT  
INPUT  
SWITCHES  
+
IN_DIFF  
-
C
OUT  
V
Figure 44. Sensor Impedance with Parallel Capacitance  
CIN in Figure 44 adds a zero to the low pass filter and hence eliminating the reduction in AVOL of the LMP202x.  
An alternative circuit to achieve this is shown in Figure 45.  
R
IN  
V
IN  
+
-
V
IN_DIFF  
C
IN  
FEEDBACK  
NETWORK  
Figure 45. Alternative Sensor Impedance Circuit  
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Application Information (continued)  
8.1.5 Transient Response to Fast Inputs  
On chip continuous auto zero correction circuitry eliminates the 1/f noise and significantly reduces the offset  
voltage and offset voltage drift; all of which are very low frequency events. For slow changing sensor signals this  
correction is transparent. For excitations which may otherwise cause the output to swing faster than 40 mV/µs,  
there are additional considerations which can be viewed two perspectives: for sine waves and for steps.  
For sinusoidal inputs, when the output is swinging rail-to-rail on ±2.5-V supplies, the auto zero circuitry will  
introduce distortions above 2.55 kHz. For smaller output swings, higher frequencies can be amplified without the  
auto zero slew limitation as shown in table below. Signals above 20 kHz, are not affected, though normally,  
closed loop bandwidth should be kept below 20 kHz so as to avoid aliasing from the auto zero circuit.  
VOUT-PEAK (V)  
fMAX-SINE WAVE (kHz)  
0.32  
1
20  
6.3  
2.5  
2.5  
For step-like inputs, such as those arising from disturbances to a sensing system, the auto zero slew rate  
limitation manifests itself as an extended ramping and settling time, lasting ~100 µs.  
8.1.6 Digital Acquisition Systems  
High resolution ADC’s with 16-bits to 24-bits of resolution can be limited by the noise of the amplifier driving  
them. The circuit configuration, the value of the resistors used and the source impedance seen by the amplifier  
can affect the noise of the amplifier. The total noise at the output of the amplifier can be dominated by one of  
several sources of noises such as: white noise or broad band noise, 1/f noise, thermal noise, and current noise.  
In low frequency applications such as medical instrumentation, the source impedance is generally low enough  
that the current noise coupled into it does not impact the total noise significantly. However, as the 1/f or flicker  
noise is paramount to many application, the use of an auto correcting stabilized amplifier like the LMP202x  
reduces the total noise.  
Table 1 summarizes the input and output referred RMS noise values for the LMP202x compared to that of  
Competitor A. As described in previous sections, the outstanding noise performance of the LMP202x can be  
even further improved by adding a simple low pass filter following the amplification stage.  
The use of an additional filter, as shown in Figure 38 benefits applications with higher gain. For this reason, at a  
gain of 10, only the results of circuit in Figure 37 are shown. The RMS input noise of the LMP202x are compared  
with Competitor A's input noise performance. Competitor A's RMS input noise behaves the same with or without  
an additional filter.  
Table 1. RMS Input Noise Performance  
RMS Input Noise (nV)  
Amplifier  
Gain  
(V/V)  
System Bandwidth Requirement  
LMP202x  
Competitor A  
(Hz)  
Figure 37 Circuit  
Figure 38 Circuit  
Figure 37, Figure 38 Circuit  
100  
1000  
100  
229  
763  
229  
763  
71  
See(1)  
See(1)  
196  
300  
1030  
300  
10  
100  
1000  
10  
621  
1030  
95  
46  
1000  
100  
158  
608  
146  
300  
1000  
462  
1030  
(1) No significant difference in Noise measurements at AV = 10V/V  
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8.2 Typical Application  
Figure 46 shows the Bridge Sensor Interface for these devices.  
V
A
VA = 5V  
+
200W  
1 kW  
1/2  
LMP2022  
-
EMI  
V
A
5.1 kW  
0.1%  
V
A
0.1 mF  
470 pF  
R
1
R
4
180W  
-
+
LMP2021  
280W  
ADC161S626  
-
+
R
2
R
3
V
A
5.1 kW  
0.1%  
0.1 mF  
-
1/2  
V
R
= 1/2 V  
A
LMP2022  
+
1 kW  
200W  
Figure 46. LMP202x Used With ADC161S626  
8.2.1 Design Requirements  
Bridge sensors are used in a variety of applications such as pressure sensors and weigh scales. Bridge sensors  
typically have a very small differential output signal. This very small differential signal needs to be accurately  
amplified before it can be fed into an ADC. As discussed in the previous sections, the accuracy of the op amp  
used as the ADC driver is essential to maintaining total system accuracy.  
The high DC performance of the LMP202x make these amplifiers ideal choices for use with a bridge sensor. The  
LMP202x have very low input offset voltage and very low input offset voltage drift. The open loop gain of the  
LMP202x is 160 dB.  
The circuit in Figure 46 shows a signal path solution for a typical bridge sensor using the LMP202x. Bridge  
sensors are created by replacing at least one of the resistors in a typical bridge with a sensor whose resistance  
varies in response to an external stimulus. For this example, the expected bridge output signal will be in the  
range of ±12 mV. This signal must be accurately amplified by the amplifier to best match the dynamic input range  
of the ADC. This is done by using one LMP2022 and one LMP2021 in front of the ADC161S626.  
The on chip EMI rejection filters available on the LMP202x help remove the EMI interference introduced to the  
signal and hence improve the overall system performance.  
8.2.2 Detailed Design Procedure  
The amplification of this ±12 mV signal is achieved in 2 stages and through a three op-amp instrumentation  
amplifier. The dual LMP2022 in Figure 46 amplifies each side of the differential output of the bridge sensor by a  
gain of 18.2. Using the LMP2022 with a gain of 18.2 reduces the input referred voltage noise of the op amps and  
the system as a result. Also, this gain allows direct filtering of the signal on the LMP2022 without compromising  
noise performance. The differential output of the two amplifiers in the LMP2022 are then fed into a LMP2021  
configured as a difference amplifier. This stage has a gain of 5, with a total system having a gain of (18.2 * 2 +1 )  
* 5 = 187. The LMP2021 has an outstanding CMRR value of 139. This impressive CMRR improves system  
performance by removing the common mode signal introduced by the bridge. With an overall gain of 187, the  
±12 mV differential input signal is gained up to ±2.24V (0.26 V to 4.74V single ended). This utilizes the amplifiers  
output swing as well as the ADC's input dynamic range, and allows for some overload range.  
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Typical Application (continued)  
Bridge sensor measurements are usually done up to 10s of Hz. Placing a 300 Hz filter on the LMP2022 helps  
removing the higher frequency noise from this circuit. This filter is created by placing two capacitors in the  
feedback path of the LMP2022 amplifiers.  
This amplified signal is then fed into the ADC161S626. The ADC161S626 is a 16-bit, 50 kSPS to 250 kSPS 5V  
ADC. In order to utilize the maximum number of bits of the ADC161S626 in this configuration, a 2.5V reference  
voltage is used. This 2.5V reference is also used to power the bridge sensor and the inverting input of the ADC.  
Using the same voltage source for these three points helps reducing the total system error by eliminating error  
due to source variations.  
With this system, the output signal of the bridge sensor which can be up to ±13.3 mV and is accurately scaled to  
the full scale range of the ADC and then digitized for further processing. The LMP202x introduced minimal error  
to the system and improved the signal quality by removing common mode signals and high frequency noise.  
8.2.3 Application Curve  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-12 -10 -8 -6 -4 -2  
0
2
4
6
8
10 12  
DIFFERENTIAL INPUT (mV)  
C001  
Figure 47. Single Ended Output Results for Bridge Circuit  
9 Power Supply Recommendations  
The LMP202x is specified for operation from 2.2 V to 5.5 V (±1.1 V to ±2.75 V) over a –40°C to +125°C  
temperature range. Parameters that can exhibit significant variance with regard to operating voltage or  
temperature are presented in the Typical Characteristics.  
CAUTION  
Supply voltages larger than 6 V can permanently damage the device.  
10 Layout  
10.1 Layout Guidelines  
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:  
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and op amp itself.  
Bypass capacitors are used to reduce the coupled noise by providing low-impedance power sources local to  
the analog circuitry.  
Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as close  
to the device as possible. A single bypass capacitor from V+ to ground is applicable for single supply  
applications.  
Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective  
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Layout Guidelines (continued)  
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.  
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital  
and analog grounds paying attention to the flow of the ground current. For more detailed information refer to  
SLOA089, Circuit Board Layout Techniques.  
In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as  
possible. If it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular  
as opposed to in parallel with the noisy trace.  
Place the external components as close to the device as possible. As shown in Typical Characteristics,  
keeping RF and RG close to the inverting input minimizes parasitic capacitance.  
Keep the length of input traces as short as possible. Always remember that the input traces are the most  
sensitive part of the circuit.  
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce  
leakage currents from nearby traces that are at different potentials.  
10.2 Layout Example  
VIN  
+
VOUT  
RG  
RF  
(Schematic Representation)  
Place components  
close to device and to  
each other to reduce  
parasitic errors  
Run the input traces  
as far away from  
the supply lines  
as possible  
VS+  
RF  
N/C  
N/C  
V+  
RG  
GND  
VIN  
GND  
œIN  
+IN  
Vœ  
OUTPUT  
N/C  
Use low-ESR, ceramic  
bypass capacitor  
GND  
Use low-ESR,  
ceramic bypass  
capacitor  
VOUT  
VSœ  
Ground (GND) plane on another layer  
Figure 48. Operational Amplifier Board Layout for Noninverting Configuration  
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11 Device and Documentation Support  
11.1 Device Support  
11.1.1 Development Support  
LMP2021/22 PSPICE Model, SNOM100  
TINA-TI SPICE-Based Analog Simulation Program, http://www.ti.com/tool/tina-ti  
TI Filterpro Software, http://www.ti.com/tool/filterpro  
DIP Adapter Evaluation Module, http://www.ti.com/tool/dip-adapter-evm  
TI Universal Operational Amplifier Evaluation Module, http://www.ti.com/tool/opampevm  
Manual for LMH730268 Evaluation board 551012922-001  
11.2 Documentation Support  
11.2.1 Related Documentation  
SBOA015 (AB-028) — Feedback Plots Define Op Amp AC Performance.  
SLOA089 — Circuit Board Layout Techniques.  
SLOD006 — Op Amps for Everyone.  
SNOA497 — AN-1698 A Specification for EMI Hardened Operational Amplifiers.  
SBOA128 — EMI Rejection Ratio of Operational Amplifiers.  
TIPD128 — Capacitive Load Drive Solution using an Isolation Resistor.  
SBOA092 -— Handbook of Operational Amplifier Applications.  
11.3 Related Links  
The table below lists quick access links. Categories include technical documents, support and community  
resources, tools and software, and quick access to sample or buy.  
Table 2. Related Links  
TECHNICAL  
DOCUMENTS  
TOOLS &  
SOFTWARE  
SUPPORT &  
COMMUNITY  
PARTS  
PRODUCT FOLDER  
SAMPLE & BUY  
LMP2021  
LMP2022  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
11.4 Trademarks  
LMP is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.5 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
11.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
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12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
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10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
LMP2021MA/NOPB  
LMP2021MAX/NOPB  
ACTIVE  
SOIC  
SOIC  
D
D
8
8
95  
RoHS & Green  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
LMP20  
21MA  
ACTIVE  
2500 RoHS & Green  
1000 RoHS & Green  
SN  
LMP20  
21MA  
LMP2021MF/NOPB  
LMP2021MFE/NOPB  
LMP2021MFX/NOPB  
LMP2022MA/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOT-23  
SOT-23  
SOT-23  
SOIC  
DBV  
DBV  
DBV  
D
5
5
5
8
SN  
SN  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
AF5A  
AF5A  
AF5A  
250  
3000 RoHS & Green  
95 RoHS & Green  
RoHS & Green  
LMP20  
22MA  
LMP2022MAX/NOPB  
ACTIVE  
SOIC  
D
8
2500 RoHS & Green  
1000 RoHS & Green  
SN  
Level-1-260C-UNLIM  
-40 to 125  
LMP20  
22MA  
LMP2022MM/NOPB  
LMP2022MME/NOPB  
LMP2022MMX/NOPB  
ACTIVE  
ACTIVE  
ACTIVE  
VSSOP  
VSSOP  
VSSOP  
DGK  
DGK  
DGK  
8
8
8
SN  
SN  
SN  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
AV5A  
AV5A  
AV5A  
250  
RoHS & Green  
3500 RoHS & Green  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
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9-Apr-2022  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LMP2021MAX/NOPB  
LMP2021MF/NOPB  
LMP2021MFE/NOPB  
LMP2021MFX/NOPB  
LMP2022MAX/NOPB  
LMP2022MM/NOPB  
LMP2022MME/NOPB  
LMP2022MMX/NOPB  
SOIC  
D
8
5
5
5
8
8
8
8
2500  
1000  
250  
330.0  
178.0  
178.0  
178.0  
330.0  
178.0  
178.0  
330.0  
12.4  
8.4  
6.5  
3.2  
3.2  
3.2  
6.5  
5.3  
5.3  
5.3  
5.4  
3.2  
3.2  
3.2  
5.4  
3.4  
3.4  
3.4  
2.0  
1.4  
1.4  
1.4  
2.0  
1.4  
1.4  
1.4  
8.0  
4.0  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
12.0  
8.0  
Q1  
Q3  
Q3  
Q3  
Q1  
Q1  
Q1  
Q1  
SOT-23  
SOT-23  
SOT-23  
SOIC  
DBV  
DBV  
DBV  
D
8.4  
8.0  
3000  
2500  
1000  
250  
8.4  
8.0  
12.4  
12.4  
12.4  
12.4  
12.0  
12.0  
12.0  
12.0  
VSSOP  
VSSOP  
VSSOP  
DGK  
DGK  
DGK  
3500  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Apr-2022  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LMP2021MAX/NOPB  
LMP2021MF/NOPB  
LMP2021MFE/NOPB  
LMP2021MFX/NOPB  
LMP2022MAX/NOPB  
LMP2022MM/NOPB  
LMP2022MME/NOPB  
LMP2022MMX/NOPB  
SOIC  
D
8
5
5
5
8
8
8
8
2500  
1000  
250  
356.0  
208.0  
208.0  
208.0  
356.0  
208.0  
208.0  
356.0  
356.0  
191.0  
191.0  
191.0  
356.0  
191.0  
191.0  
356.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
SOT-23  
SOT-23  
SOT-23  
SOIC  
DBV  
DBV  
DBV  
D
3000  
2500  
1000  
250  
VSSOP  
VSSOP  
VSSOP  
DGK  
DGK  
DGK  
3500  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Apr-2022  
TUBE  
*All dimensions are nominal  
Device  
Package Name Package Type  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
LMP2021MA/NOPB  
LMP2022MA/NOPB  
D
D
SOIC  
SOIC  
8
8
95  
95  
495  
495  
8
8
4064  
4064  
3.05  
3.05  
Pack Materials-Page 3  
PACKAGE OUTLINE  
DBV0005A  
SOT-23 - 1.45 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
3.0  
2.6  
0.1 C  
1.75  
1.45  
1.45  
0.90  
B
A
PIN 1  
INDEX AREA  
1
2
5
(0.1)  
2X 0.95  
1.9  
3.05  
2.75  
1.9  
(0.15)  
4
3
0.5  
5X  
0.3  
0.15  
0.00  
(1.1)  
TYP  
0.2  
C A B  
NOTE 5  
0.25  
GAGE PLANE  
0.22  
0.08  
TYP  
8
0
TYP  
0.6  
0.3  
TYP  
SEATING PLANE  
4214839/G 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Refernce JEDEC MO-178.  
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.25 mm per side.  
5. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X (0.95)  
4
(R0.05) TYP  
(2.6)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214839/G 03/2023  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X(0.95)  
4
(R0.05) TYP  
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4214839/G 03/2023  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, regulatory or other requirements.  
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an  
application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license  
is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you  
will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these  
resources.  
TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with  
such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for  
TI products.  
TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2023, Texas Instruments Incorporated  

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