LMV711M6X [TI]
Low Power, RRIO Operational Amplifiers with High Output Current Drive and Shutdown Option; 低功耗， RRIO高输出电流驱动和关机选项运算放大器
| 型号： | LMV711M6X |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | Low Power, RRIO Operational Amplifiers with High Output Current Drive and Shutdown Option |
| 文件： | 总20页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LMV710,LMV711,LMV715
LMV710/LMV711/LMV715 Low Power, RRIO Operational Amplifiers with High
Output Current Drive and Shutdown Option
Literature Number: SNOS519I
January 9, 2009
LMV710/LMV711/LMV715
Low Power, RRIO Operational Amplifiers with High Output
Current Drive and Shutdown Option
General Description
Features
The LMV710/LMV711/LMV715 are BiCMOS operational am-
plifiers with a CMOS input stage. These devices have greater
than RR input common mode voltage range, rail-to-rail output
and high output current drive. They offer a bandwidth of 5 MHz
and a slew rate of 5 V/µs.
(For 5V supply, typical unless otherwise noted).
Low offset voltage
Gain-bandwidth product
Slew rate
Space saving packages
Turn on time from shutdown
Industrial temperature range
Supply current in shutdown mode
3 mV, max
5 MHz, typ
5 V/µs, typ
■
■
■
5-Pin and 6-Pin SOT23
<10 µs
■
■
■
■
■
■
■
■
On the LMV711/LMV715, a separate shutdown pin can be
used to disable the device and reduces the supply current to
0.2 µA (typical). They also feature a turn on time of less than
10 µs. It is an ideal solution for power sensitive applications,
such as cellular phone, pager, palm computer, etc. In addi-
tion, once the LMV715 is in shutdown the output will be “Tri-
stated”.
−40°C to +85°C
0.2 µA, typ
Guaranteed 2.7V and 5V performance
Unity gain stable
Rail-to-rail input and output
Capable of driving 600Ω load
The LMV710 is offered in the space saving 5-Pin SOT23 Tiny
package. The LMV711/LMV715 are offered in the space sav-
ing 6-Pin SOT23 Tiny package.
Applications
The LMV710/LMV711/LMV715 are designed to meet the de-
mands of low power, low cost, and small size required by
cellular phones and similar battery powered portable elec-
tronics.
Wireless phones
■
■
■
■
■
■
■
GSM/TDMA/CDMA power amp control
AGC, RF power detector
Temperature compensation
Wireless LAN
Bluetooth
HomeRF
Typical Application
High Side Current Sensing
10132513
© 2009 National Semiconductor Corporation
101325
www.national.com
Current at Input Pin
Mounting Temp.
Infrared or Convection (20 sec)
Storage Temperature Range
Junction Temperature (TJMAX
± 10 mA
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
235°C
−65°C to 150°C
150°C
)
ESD Tolerance (Note 2)
(Note 5)
Machine Model
Human Body Model
100V
2000V
Operating Ratings (Note 1)
Supply Voltage
Differential Input Voltage
Voltage at Input/Output Pin
± Supply Voltage
(V+) + 0.4V
2.7V to 5.0V
−40°C to 85°C
Temperature Range
(V−) − 0.4V
Thermal Resistance (θJA
MF05A Package, 5-Pin SOT23
MF06A package, 6-Pin SOT23
)
Supply Voltage (V+ - V −)
Output Short Circuit to V+
Output Short Circuit to V−
5.5V
(Note 3)
(Note 4)
265 °C/W
265 °C/W
2.7V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = 1.35V and RL > 1 MΩ. Boldface limits
apply at the temperature extremes.
Symbol
VOS
Parameter
Input Offset Voltage
Condition
Typ
(Note 6)
Limits
(Note 7)
Units
VCM = 0.85V and VCM = 1.85V
0.4
3
mV
3.2
max
IB
Input Bias Current
4
pA
CMRR
Common Mode Rejection Ratio
75
50
45
dB
min
0 ≤ VCM ≤ 2.7V
2.7V ≤ V+ ≤ 5V,
dB
min
PSRR
Power Supply Rejection Ratio
110
95
70
68
VCM = 0.85V
2.7V ≤ V+ ≤ 5V,
VCM = 1.85V
dB
min
70
68
VCM
ISC
Input Common-Mode Voltage Range
Output Short Circuit Current
-0.3
3
-0.2
2.9
For CMRR ≥ 50 dB
V
Sourcing
VO = 0V
28
15
12
mA
min
Sinking
VO = 2.7V
40
2.68
0.01
2.55
0.05
50
25
22
mA
min
VO
Output Swing
2.62
2.60
V
min
RL = 10 kΩ to 1.35V
0.12
0.15
V
max
2.52
2.50
V
min
RL = 600Ω to 1.35V
0.23
0.30
V
max
VO (SD)
IO (SD)
CO (SD)
IS
Output Voltage Level in
Shutdown Mode (LMV711 only)
200
mV
pA
pF
Output Leakage Current in
Shutdown Mode (LMV715 Only)
1
Output Capacitance in
Shutdown Mode (LMV715 Only)
32
Supply Current
On Mode
1.22
0.002
1.7
1.9
mA
max
Shutdown Mode, VSD = 0V
10
µA
www.national.com
2
Symbol
AV
Parameter
Large Signal Voltage
Condition
Typ
(Note 6)
Limits
(Note 7)
Units
Sourcing
115
113
110
100
80
76
dB
min
RL = 10 kΩ
VO = 1.35V to 2.3V
Sinking
80
76
dB
min
RL = 10 kΩ
VO = 0.4V to 1.35V
Sourcing
80
76
dB
min
RL = 600Ω
VO = 1.35V to 2.2V
Sinking
80
dB
76
min
RL = 600Ω
VO = 0.5V to 1.35V
SR
Slew Rate
(Note 8)
5
5
V/µs
MHz
Deg
GBWP
φm
Gain-Bandwidth Product
Phase Margin
60
TON
VSD
Turn-on Time from Shutdown
Shutdown Pin Voltage Range
<10
1.5 to 2.7
0 to 1
20
µs
V
On Mode
2.4 to 2.7
0 to 0.8
Shutdown Mode
f = 1 kHz
V
en
Input-Referred Voltage Noise
3.2V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C. V+ = 3.2V, V− = 0V, VCM = 1.6V. Boldface limits apply at the
temperature extremes.
Symbol
VO
Parameter
Conditions
Typ
(Note 6)
Limit
(Note 7)
Units
Output Swing
IO = 6.5 mA
3.0
2.95
V
2.92
min
0.01
0.18
V
0.25
max
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25°C. V+ = 5V, V − = 0V, VCM = 2.5V, and RL > 1 MΩ. Boldface limits
apply at the temperature extremes.
Symbol
VOS
Parameter
Input Offset Voltage
Condition
Typ
(Note 6)
Limits
(Note 7)
Units
VCM = 0.85V and VCM = 1.85V
0.4
3
mV
3.2
max
IB
Input Bias Current
4
pA
CMRR
Common Mode Rejection Ratio
70
50
48
dB
min
0V ≤ VCM ≤ 5V
2.7V ≤ V+ ≤ 5V,
dB
min
PSRR
Power Supply Rejection Ratio
110
95
70
68
VCM = 0.85V
2.7V ≤ V+ ≤ 5V,
VCM = 1.85V
dB
min
70
68
VCM
Input Common-Mode Voltage Range
-0.3
5.3
−0.2
5.2
For CMRR ≥ 50 dB
V
3
www.national.com
Symbol
ISC
Parameter
Condition
Typ
(Note 6)
Limits
(Note 7)
Units
Output Short Circuit Current
Sourcing
VO = 0V
35
40
25
21
mA
min
Sinking
VO = 5V
25
21
mA
min
VO
Output Swing
4.98
0.01
4.85
0.05
50
4.92
4.90
V
min
RL = 10 kΩ to 2.5V
0.12
0.15
V
max
4.82
4.80
V
min
RL = 600Ω to 2.5V
0.23
0.3
V
max
VO (SD)
IO (SD)
CO (SD)
IS
Output Voltage Level in
Shutdown Mode (LMV711 only)
200
mV
pA
pF
Output Leakage Current in
Shutdown Mode (LMV715 Only)
1
Output Capacitance in
shutdown Mode (LMV715 Only)
32
Supply Current
On Mode
1.17
1.7
mA
1.9
max
Shutdown Mode
Sourcing
0.2
10
µA
AV
Large Signal Voltage Gain
123
80
dB
76
min
RL = 10 kΩ
VO = 2.5V to 4.6V
Sinking
120
110
118
80
76
dB
min
RL = 10 kΩ
VO = 0.4V to 2.5V
Sourcing
80
76
dB
min
RL = 600Ω
VO = 2.5V to 4.5V
Sinking
80
dB
76
min
RL = 600Ω
VO = 0.5V to 2.5V
SR
Slew Rate
(Note 8)
5
5
V/µs
MHz
Deg
GBWP
φm
Gain-Bandwidth Product
Phase Margin
60
TON
VSD
Turn-on Time from Shutdown
Shutdown Pin Voltage Range
<10
2 to 5
0 to 1.5
20
µs
On Mode
2.4 to 5
0 to 0.8
V
Shutdown Mode
f = 1 kHz
en
Input-Referred Voltage Noise
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human body model, 1.5 kΩ in series with 100 pF. Machine model, 0Ω in series with 100 pF.
Note 3: Shorting circuit output to V+ will adversely affect reliability.
Note 4: Shorting circuit output to V− will adversely affect reliability.
Note 5: The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - T A)/θJA. All numbers apply for packages soldered directly into a PC board.
Note 6: Typical values represent the most likely parametric norm.
Note 7: All limits are guaranteed by testing or statistical analysis.
Note 8: Number specified is the slower of the positive and negative slew rates.
www.national.com
4
Typical Performance Characteristics Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
Supply Current vs. Supply Voltage (On Mode)
LMV711/LMV715 Supply Current vs.
Supply Voltage (Shutdown Mode)
10132527
10132528
Output Positive Swing vs. Supply Voltage
Output Negative Swing vs. Supply Voltage
10132529
10132530
Output Positive Swing vs. Supply Voltage
Output Negative Swing vs. Supply Voltage
10132531
10132532
5
www.national.com
Output Positive Swing vs. Supply Voltage
Output Negative Swing vs. Supply Voltage
10132533
10132534
Input Voltage Noise vs. Frequency
PSRR vs. Frequency
10132535
10132536
CMRR vs. Frequency
LMV711/LMV715 Turn On Characteristics
10132538
10132537
www.national.com
6
Sourcing Current vs. Output Voltage
THD+N vs. Frequency (VS = 5V)
THD+N vs. VOUT
Sinking Current vs. Output Voltage
THD+N vs. Frequency (VS = 2.7V)
THD+N vs. VOUT
10132539
10132540
10132541
10132542
10132543
10132544
7
www.national.com
CCM vs. VCM
CCM vs. VCM
10132545
10132546
CDIFF vs. VCM (VS = 2.7V)
CDIFF vs. VCM (VS = 5V)
10132547
10132548
Open Loop Frequency Response
Open Loop Frequency Response
10132512
10132510
www.national.com
8
Open Loop Frequency Response
Open Loop Frequency Response
10132511
10132507
Open Loop Frequency Response
Open Loop Frequency Response
10132509
10132508
Non-Inverting Large Signal Pulse Response
Non-Inverting Small Signal Pulse Response
10132503
10132502
9
www.national.com
Inverting Large Signal Pulse Response
Inverting Small Signal Pulse Response
10132504
10132505
VOS vs. VCM
VOS vs. VCM
10132549
10132550
www.national.com
10
Application Information
1.0 SUPPLY BYPASSING
The application circuits in this datasheet do not show the
power supply connections and the associated bypass capac-
itors for simplification. When the circuits are built, it is always
required to have bypass capacitors. Ceramic disc capacitors
(0.1 µF) or solid tantalum (1 µF) with short leads, and located
close to the IC are usually necessary to prevent interstage
coupling through the power supply internal impedance. Inad-
equate bypassing will manifest itself by a low frequency os-
cillation or by high frequency instabilities. Sometimes, a 10 µF
(or larger) capacitor is used to absorb low frequency varia-
tions and a smaller 0.1 µF disc is paralleled across it to
prevent any high frequency feedback through the power sup-
ply lines.
10132552
FIGURE 1.
When the input is a small signal and this small signal falls
inside the VOS transition range, the gain, CMRR and some
other parameters will be degraded. To resolve this problem,
the small signal should be placed such that it avoids the
VOS crossover point.
To achieve maximum output swing, the output should be bi-
ased at mid-supply. This is normally done by biasing the input
at mid-supply. But with supply voltage range from 2V to 3.4V,
the input of the op amp should not be biased at mid-supply
because of the transition of the VOS. Figure 2 shows an ex-
ample of how to get away from the VOS crossover point and
maintain a maximum swing with a 2.7V supply. Figure 3
2.0 SHUTDOWN MODE
The LMV711/LMV715 have a shutdown pin. To conserve bat-
tery life in portable applications, they can be disabled when
the shutdown pin voltage is pulled low. For LMV711 during
shutdown mode, the output stays at about 50 mV from the
lower rail, and the current drawn from the power supply is 0.2
µA (typical). This makes the LMV711 an ideal solution for
power sensitive applications. For the LMV715 during shut-
down mode, the output will be “Tri-stated”.
shows the waveforms of VIN and VOUT
.
The shutdown pin should never be left unconnected. In ap-
plications where shutdown operation is not needed and the
LMV711 or LMV715 is used, the shutdown pin should be con-
nected to V+. Leaving the shutdown pin floating will result in
an undefined operation mode and the device may oscillate
between shutdown and active modes.
3.0 RAIL-TO-RAIL INPUT
10132517
The rail-to-rail input is achieved by using paralleled PMOS
and NMOS differential input stages. (See Simplified
Schematics in this datasheet). When the common mode input
voltage changes from ground to the positive rail, the input
stage goes through three modes. First, the NMOS pair is cut-
off and the PMOS pair is active. At around 1.4V, both PMOS
and NMOS pairs operate, and finally the PMOS pair is cutoff
and NMOS pair is active. Since both input stages have their
own offset voltage (VOS), the offset of the amplifier becomes
a function of the common-mode input voltage. See curves for
VOS vs. VCM in curve section.
FIGURE 2.
As shown in the curve, the VOS has a crossover point at 1.4V
above V−. Proper design must be done in both DC and AC
coupled applications to avoid problems. For large input sig-
nals that include the VOS crossover point in their dynamic
range, it will cause distortion in the output signal. One way to
avoid such distortion is to keep the signal away from the
crossover point. For example, in a unity gain buffer configu-
ration and with VS = 5V, a 3V peak-to-peak signal center at
2.5V will contain input-crossover distortion. To avoid this, the
input signal should be centered at 3.5V instead. Another way
to avoid large signal distortion is to use a gain of −1 circuit
which avoids any voltage excursions at the input terminals of
the amplifier. See Figure 1. In this circuit, the common mode
DC voltage (VCM) can be set at a level away from the VOS
crossover point.
10132551
FIGURE 3.
The inputs can be driven 300 mV beyond the supply rails
without causing phase reversal at the output. However, the
inputs should not be allowed to exceed the maximum ratings.
11
www.national.com
4.0 COMPENSATION OF INPUT CAPACITANCE
In Figure 5, the isolation resistor RISO and the load capacitor
CL form a pole to increase stability by adding more phase
margin to the overall system. The desired performance de-
pends on the value of RISO. The bigger the RISO resistor value,
the more stable VOUT will be. But the DC accuracy is not great
when the RISO gets bigger. If there were a load resistor in
Figure 5, the output would be voltage divided by RISO and the
load resistor.
In the application (Figure 4) where a large feedback resistor
is used, the feedback resistor can react with the input capac-
itance of the op amp and introduce an additional pole to the
close loop frequency response.
The circuit in Figure 6 is an improvement to the one in Figure
5 because it provides DC accuracy as well as AC stability. In
this circuit, RF provides the DC accuracy by using feed-for-
ward techniques to connect VIN to RL. CF and RISO serve to
counteract the loss of phase margin by feeding the high fre-
quency component of the output signal back to the amplifier's
inverting input, thereby preserving phase margin in the overall
feedback loop. Increased capacitive drive is possible by in-
creasing the value of CF . This in turn will slow down the pulse
response.
10132518
FIGURE 4. Cancelling the Effect of Input Capacitance
This pole occurs at frequency fp , where
Any stray capacitance due to external circuit board layout, any
source capacitance from transducer or photodiode connected
to the summing node will also be added to the input capaci-
tance. If fp is less than or close to the unity-gain bandwidth (5
MHz) of the op amp, the phase margin of the loop is reduced
and can cause the system to be unstable.
10132522
FIGURE 6. Indirectly Driving A Capacitive A Load with DC
Accuracy
To avoid this problem, make sure that fp occurs at least 2 oc-
taves beyond the expected −3 dB frequency corner of the
close loop frequency response. If not, a feedback capacitor
CF can be placed in parallel with RF such that
6.0 APPLICATION CIRCUITS
PEAK DETECTOR
Peak detectors are used in many applications, such as test
equipment, measurement instrumentation, ultrasonic alarm
systems, etc. Figure 7 shows the schematic diagram of a peak
detector using LMV710 or LMV711 or LMV715. This peak
detector basically consists of a clipper, a parallel RC network,
and a voltage follower.
The paralleled RF and CF introduce a zero, which cancels the
effect from the pole.
5.0 CAPACITIVE LOAD TOLERANCE
The LMV710/LMV711/ LMV715 can directly drive 200 pF in
unity-gain without oscillation. The unity-gain follower is the
most sensitive configuration to capacitive loading. Direct ca-
pacitive loading reduces the phase margin of amplifiers. The
combination of the amplifier's output impedance and the ca-
pacitive load induces phase lag. This results in either an
underdamped pulse response or oscillation. To drive a heav-
ier capacitive load, circuit in Figure 5 can be used.
10132523
FIGURE 7. Peak Detector
The capacitor C1 is first discharged by applying a positive
pulse to the reset transistor. When a positive voltage VIN is
applied to the input, the input voltage is higher than the volt-
age across C1. The output of the op amp goes high and
forward biases the diode D1. The capacitor C1 is charged to
VIN. When the input becomes less than the current capacitor
voltage, the output of the op amp A1 goes low and the diode
10132521
FIGURE 5. Indirectly Driving A Capacitive Load using
Resistive Isolation
www.national.com
12
D1 is reverse biased. This isolates the C1 and leaves it with
the charge equivalent to the peak of the input voltage. The
follower prevents unintentional discharging of C1 by loading
from the following circuit.
vent over-charging. A sense resistor RSENSE is connected to
the battery directly. This system requires an op amp with rail-
to-rail input. The LMV710/LMV711/LMV715 are ideal for this
application because its common mode input range can go
beyond the positive rail.
R5 and C1 are properly selected so that the capacitor is
charged rapidly to VIN. During the holding period, the capac-
itor slowly discharge through C1, via leakage of the capacitor
and the reverse-biased diode, or op amp bias currents. In any
cases the discharging time constant is much larger than the
charge time constant. And the capacitor can hold its voltage
long enough to minimize the output ripple.
Resistors R2 and R3 limit the current into the inverting input
of A1 and the non-inverting input of A2 when power is dis-
connected from the circuit. The discharging current from C1
during power off may damage the input circuitry of the op
amps.
The peak detector can be reset by applying a positive pulse
to the reset transistor. The charge on the capacitor is dumped
into ground, and the detector is ready for another cycle.
The maximum input voltage to this detector should be less
than (V+ - VD), where VD is the forward voltage drop of the
diode. Otherwise, the input voltage should be scaled down
before applying to the circuit.
10132513
FIGURE 8. High Side Current Sensing
HIGH SIDE CURRENT SENSING
The high side current sensing circuit (Figure 8) is commonly
used in a battery charger to monitor charging current to pre-
10132506
FIGURE 9. Typical of GSM P.A. Control Loop
GSM POWER AMPLIFIER CONTROL LOOP
equal. Power control is accomplished by changing the ramp-
ing voltage.
There are four critical sections in the GSM Power Amplifier
Control Loop. The class-C RF power amplifier provides am-
plification of the RF signal. A directional coupler couples small
amount of RF energy from the output of the RF P. A. to an
envelope detector diode. The detector diode senses the sig-
nal level and rectifies it to a DC level to indicate the signal
strength at the antenna. An op amp is used as an error am-
plifier to process the diode voltage and ramping voltage. This
loop control the power amplifier gain via the op amp and
forces the detector diode voltage and ramping voltage to be
The LMV710/LMV711/LMV715 are well suited as an error
amplifier in this application. The LMV711/LMV715 have an
extra shutdown pin to switch the op amp to shutdown mode.
In shutdown mode, the LMV711/LMV715 consume very low
current. The LMV711 provides a ground voltage to the power
amplifier control pin VPC. Therefore, the power amplifier can
be turned off to save battery life. The LMV715 output will be
“tri-stated” when in shutdown.
13
www.national.com
Simplified Schematic
LMV711
10132516
Connection Diagrams
5-Pin SOT23
LMV710
6-Pin SOT23
LMV711 and LMV715
10132514
10132515
Top View
Top View
Ordering Information
Package
Temperature Range
Industrial
Packaging Marking
Transport Media
NSC Drawing
−40°C to +85°C
LMV710M5
1k Units Tape and Reel
3k Units Tape and Reel
1k Units Tape and Reel
3k Units Tape and Reel
1k Units Tape and Reel
3k Units Tape and Reel
5-Pin SOT23
6-Pin SOT23
A48A
A47A
A75A
MF05A
MF06A
LMV710M5X
LMV711M6
LMV711M6X
*LMV715MF
*LMV715MFX
*LMV715MF/LMV715MFX are not recommended for new designs with a last time buy date of 12/1/2009.
www.national.com
14
SOT-23 Tape and Reel Specification
Tape Format
Tape Section
# Cavities
0 (min)
75 (min)
3000
Cavity Status
Empty
Cover Tape Status
Sealed
Leader
(Start End)
Empty
Sealed
Carrier
Filled
Sealed
1000
Filled
Sealed
Trailer
(Hub End)
125 (min)
0 (min)
Empty
Sealed
Empty
Sealed
Tape Dimensions
10132555
TAPE SIZE DIM
A
DIM Ao
DIM
B
DIM Bo
DIM
F
DIM
Ko
DIM P1
DIM
T
DIM
W
8 mm
.130
(3.3)
.124
(3.15)
.130
(3.3)
.126
(3.2)
.138 ± .002
(3.5 ± 0.05)
.055 ± .004
(1.4 ± 0.1)
.157
(4)
.008 ± .004
(0.2 ± 0.1)
.315 ± .012
(8 ± 0.3)
Note:
UNLESS OTHERWISE SPECIFIED
3. SMALLEST ALLOWABLE TAPE BENDING RADIUS: 1.181 IN/
30mm.
1. CUMULATIVE PITCH TOLERANCE FOR FEEDING HOLES AND
CAVITIES (CHIP POCKETS) NOT TO EXCEED .008 IN / 0.2mm
OVER 10 PITCH SPAN.
4. DIMENSIONS WITH Δ ARE CRITICAL. DIMENSIONS TO BE AB-
SOLUTELY INSPECTED.
2. THRU HOLE INSIDE CAVITY IS CENTERED WITHIN CAVITY.
15
www.national.com
Reel Dimensions
10132554
TAPE
SIZE
DIM A DIM B
DIM C
DIM D DIM N
DIM W1
DIM W2
DIM W3
(LSL-USL)
8 mm
7.00
(177.8)
.059
(1.5)
.512 + .020/−.008
(13 +0.5/−0.2)
.795
(20.2)
2.165
(55)
.331 + .059/−.000
(8.4 + 1.5/0)
.567
(14.4)
.311 - .429
(7.9 - 10.9)
Note:
UNLESS OTHERWISE SPECIFIED
1. MATERIAL:
10. ALL GATING FROM THE MOLD MUST BE PROPERLY RE-
MOVED.
11. NO FLASHES ARE TO BE PRESENT ALONG THE PARTING
LINES.
POLYSTYRENE/PVC (WITH ANTISTATIC COATING).
OR POLYSTYRENE/PVC, ANTISTATIC
12. ALLOWABLE RADIUS FOR CORNERS AND EDGES IS .012
INCHES/0.3 MILLIMETERS MINIMUM.
OR POLYSTYRENE/PVC, CONDUCTIVE.
2. CONTROLLING DIMENSION IS MILLIMETER, DIMENSIONS IN
INCHES ROUNDED.
3. SURFACE RESISTIVITY: 1010 OHM/SQ MAXIMUM.
13. SINK MARKS THAT WILL CAUSE A CHANGE TO THE SPEC-
IFIED DIMENSIONS OR SHAPE OF THE REELS ARE NOT AL-
LOWED.
4. ALL OUTPUT REELS SHALL BE UNIFORM IN SHADE.
14. MOLDED REELS SHALL BE FREE OF COSMETIC DEFECTS
SUCH AS VOIDS. FLASHING, EXCESSIVE FLOW MARKS, ETC.
5. PACKING OF REELS IN CONTAINERS MUST ENSURE NO
DAMAGE TO THE REEL.
15. THERE MUST BE NO MISMATCH BETWEEN MATING PARTS.
6. SURFACE FINISH OF THE FLANGES SHALL BE SMOOTH,
MATTE FINISH PREFERRED.
16. MOLDED REELS SHALL BE ANTISTATIC COATED OR
BLENDED.
7. ALL EDGES, ESPECIALLY THE TAPE ENTRY EDGES, MUST
BE FREE OF BURRS.
17. THE SOT23-5L AND SOT23-6L PACKAGE USE THE 7-INCH
REEL.
8. THE REEL SHOULD NOT WARP IN THE STORAGE TEMPER-
ATURE OF 67°C MAXIMUM.
9. GLASS TRANSITION TEMPERATURE (Tg) OF THE PLASTIC
REEL SHALL BE LOWER THAN −20°C.
www.national.com
16
Physical Dimensions inches (millimeters) unless otherwise noted
SOT23-5
NS Package Number MF05A
SOT23-6
NS Package Number MF06A
17
www.national.com
Notes
For more National Semiconductor product information and proven design tools, visit the following Web sites at:
Products
www.national.com/amplifiers
Design Support
Amplifiers
WEBENCH® Tools
App Notes
www.national.com/webench
www.national.com/appnotes
www.national.com/refdesigns
www.national.com/samples
www.national.com/evalboards
www.national.com/packaging
www.national.com/quality/green
www.national.com/contacts
Audio
www.national.com/audio
www.national.com/timing
www.national.com/adc
www.national.com/interface
www.national.com/lvds
www.national.com/power
www.national.com/switchers
www.national.com/ldo
Clock and Timing
Data Converters
Interface
Reference Designs
Samples
Eval Boards
LVDS
Packaging
Power Management
Switching Regulators
LDOs
Green Compliance
Distributors
Quality and Reliability www.national.com/quality
LED Lighting
Voltage Reference
PowerWise® Solutions
www.national.com/led
Feedback/Support
Design Made Easy
Solutions
www.national.com/feedback
www.national.com/easy
www.national.com/vref
www.national.com/powerwise
www.national.com/solutions
www.national.com/milaero
www.national.com/solarmagic
www.national.com/AU
Serial Digital Interface (SDI) www.national.com/sdi
Mil/Aero
Temperature Sensors
Wireless (PLL/VCO)
www.national.com/tempsensors Solar Magic®
www.national.com/wireless
Analog University®
THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION
(“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY
OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO
SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS,
IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS
DOCUMENT.
TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT
NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL
PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR
APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND
APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE
NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS.
EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO
LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE
AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR
PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY
RIGHT.
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and
whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected
to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform
can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness.
National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other
brand or product names may be trademarks or registered trademarks of their respective holders.
Copyright© 2009 National Semiconductor Corporation
For the most current product information visit us at www.national.com
National Semiconductor
Americas Technical
Support Center
Email: support@nsc.com
Tel: 1-800-272-9959
National Semiconductor Europe
Technical Support Center
Email: europe.support@nsc.com
German Tel: +49 (0) 180 5010 771
English Tel: +44 (0) 870 850 4288
National Semiconductor Asia
Pacific Technical Support Center
Email: ap.support@nsc.com
National Semiconductor Japan
Technical Support Center
Email: jpn.feedback@nsc.com
www.national.com
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,
and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are
sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard
warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using TI components. To minimize the risks associated with customer products and applications, customers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,
or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a
warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual
property of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive
business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all
express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not
responsible or liable for any such statements.
TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably
be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing
such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products
and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be
provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in
such safety-critical applications.
TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are
specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, TI will not be responsible for any failure to meet such requirements.
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Audio
Applications
www.ti.com/audio
amplifier.ti.com
dataconverter.ti.com
www.dlp.com
Communications and Telecom www.ti.com/communications
Amplifiers
Data Converters
DLP® Products
DSP
Computers and Peripherals
Consumer Electronics
Energy and Lighting
Industrial
www.ti.com/computers
www.ti.com/consumer-apps
www.ti.com/energy
dsp.ti.com
www.ti.com/industrial
www.ti.com/medical
www.ti.com/security
Clocks and Timers
Interface
www.ti.com/clocks
interface.ti.com
logic.ti.com
Medical
Security
Logic
Space, Avionics and Defense www.ti.com/space-avionics-defense
Transportation and Automotive www.ti.com/automotive
Power Mgmt
Microcontrollers
RFID
power.ti.com
microcontroller.ti.com
www.ti-rfid.com
Video and Imaging
www.ti.com/video
OMAP Mobile Processors www.ti.com/omap
Wireless Connectivity www.ti.com/wirelessconnectivity
TI E2E Community Home Page
e2e.ti.com
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2011, Texas Instruments Incorporated
相关型号：
LMV712
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
NSC
LMV712
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
TI
LMV712-N
LMV712-N Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
TI
LMV712BL
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
NSC
LMV712BLX
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
NSC
LMV712LD
Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
NSC
LMV712LD
LMV712-N Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown
TI
©2020 ICPDF网 联系我们和版权申明