首页 |元器件品牌

LMX2315WG-QMLX [TI]

PLL FREQUENCY SYNTHESIZER, 1200MHz, CDSO20, 0.300 INCH, CERAMIC, SOIC-20;
LMX2315WG-QMLX
型号： LMX2315WG-QMLX
厂家： TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述：

PLL FREQUENCY SYNTHESIZER, 1200MHz, CDSO20, 0.300 INCH, CERAMIC, SOIC-20

CD 信息通信管理
文件： 总12页 (文件大小：132K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
MICROCIRCUIT DATA SHEET  
Original Creation Date: 09/05/97  
Last Update Date: 03/10/00  
MNLMX2315-X REV 2B1  
Last Major Revision Date: 05/10/99  
PLL FREQUENCY SYNTHESIZER  
General Description  
The LMX2315 is a high performance frequency synthesizer with integrated prescalers  
designed for RF operation up to 1.2 GHz. They are fabricated using National's ABiC IV  
BiCMOS process.  
A 64/65 or a 128/129 divide ratio can be selected for the LMX2315 RF synthesizer at input  
frequencies of up to 1.2 GHz. Using a proprietary digital phase locked loop technique, the  
LMX2315's linear phase detector characteristics can generate very stable, low noise  
signals for controlling a local oscillator.  
Serial data is transferred into the LMX2315 via a three line MICROWIRE(TM) interface (Data  
Enable, Clock). Supply voltage can range from 2.7V to 5.5V. The LMX2315 features very low  
current consumption, typically 6 mA.  
The LMX2315, is available in a SOIC 20-pin surface mount ceramic package.  
Industry Part Number  
NS Part Numbers  
LMX2315  
LMX2315WG-MLS  
LMX2315WG-QML  
Prime Die  
LMX2315  
Controlling Document  
SEE FEATURES SECTION:  
Processing  
Subgrp Description  
Temp (oC)  
MIL-STD-883, Method 5004  
1
Static tests at  
+25  
2
Static tests at  
+105  
-55  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
+25  
Quality Conformance Inspection  
5
+105  
-55  
6
MIL-STD-883, Method 5005  
7
+25  
8A  
8B  
9
+105  
-55  
+25  
10  
11  
+105  
-55  
1
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
Features  
- RF operation up to 1.2 GHz.  
- 2.7V to 5.5V operation.  
- Low current consumption.  
- Dual modulus prescaler: 64/65 or 128/129  
- Internal balanced, low leakage charge pump.  
- Power down feature for sleep mode:  
Icc = 30 uA (typ) at Vcc = 3V  
- Small-outline ceramic surface mount SOIC, 0.300" wide.  
- CONTROLLING DOCUMENT:  
LMX2315WG-QML  
5962-9855001QXA  
Applications  
- Satellite Communications Payloads  
- Navigation Systems  
- Military Wireless Communications  
2
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
(Absolute Maximum Ratings)  
(Note 1)  
Power Supply Voltage  
Vcc  
Vp  
-0.3V to +6.5V  
-0.3V to +6.5V  
Voltage on Any Pin  
with Gnd = 0V (Vi)  
-0.3V to +6.5V  
Storage Temperature Range (Ts)  
-65 C to +150 C  
1 Watt  
Power Dissipation  
(Note 2)  
Pd  
Junction Temperature  
(Note 2)  
Tj  
+150 C  
+260 C  
Lead Temperature (Tl)  
(Solder, 4 sec.)  
Thermal Resistance  
(Note 2)  
ThetaJA  
(Still Air @ 0.5W)  
(500LF/Min Air Flow @ 0.5W)  
120 C/W  
86 C/W  
ThetaJC  
19 C/W  
600mg  
Package Weight  
(Typical)  
ESD Tolerance  
(Note 3)  
Less Than 500V  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.  
Operating Ratings indicate conditions for which the device is functional, but do not  
guaranteed specific performance limits. For guaranteed specifications and test  
conditions, see the Electrical Characteristics. The guaranteed specifications apply  
only for the test conditions listed. Some performance characteristics may degrade  
when the device is not operated under the listed test conditions.  
Note 2: The maximum power dissipation must be derated at elevated temperatures and is  
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to  
ambient theraml resistance), and TA (ambient temperature). The maximum allowable  
power dissiaption at any temperature is Pdmax = (Tjmax -TA) /ThetaJA or the number  
given in the Absolute Maximum Ratings, whichever is lower.  
Note 3: This device is a high performance RF integrated circuit with an ESD rating <500V and  
is ESD sensitive. Handling and assembly of this device should be done at ESD  
workstations.  
Recommended Operating Conditions  
Power Supply Voltage  
Vcc  
Vp  
2.7V to 5.5V  
Vcc to +5.5V  
Operating Temperature (TA)  
-55 C to +105 C  
3
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
Electrical Characteristics  
DC PARAMETERS:  
(The following conditions apply to all the following parameters, unless otherwise specified.)  
AC: Vcc = 2.7V, Vp = 2.7V  
PIN-  
NAME  
SUB-  
SYMBOL  
Icc  
PARAMETER  
CONDITIONS  
NOTES  
MIN  
MAX UNIT  
GROUPS  
Power Supply  
Current  
Vcc = 5.5V  
8.5  
mA  
mA  
uA  
1, 3  
2
9.5  
180  
Icc-pwdn  
Power Down  
Current  
Vcc = 2.7V  
Vcc = 5.5V  
1, 2,  
3
350  
uA  
V
1, 2,  
3
VIH  
VIL  
IIH  
High Level Input Vcc = Vp = 2.7V  
Voltage  
1, 4  
1, 4  
0.7Vcc  
1, 2,  
3
Low Level Input  
Voltage  
Vcc = Vp = 2.7V  
0.3Vcc V  
1, 2,  
3
High Level Input VIH = Vcc = 5.5V  
Current (Clock  
Data)  
-1.0  
-1.0  
1.0  
1.0  
100  
uA  
1, 2,  
3
IIL  
Low Level Input  
Current (Clock  
Data)  
VIL = 0, Vcc = 5.5V  
uA  
1, 2,  
3
IIH  
IIL  
IIH  
Oscillator Input VIH = Vcc = 5.5V  
Current  
uA  
uA  
uA  
1, 2,  
3
Oscillator Input VIL = 0, Vcc = 5.5V  
Current  
-100  
-1.0  
1, 2,  
3
High Level Input VIH = Vcc = 5.5V  
Current (LE, FC,  
PWDN)  
1.0  
1.0  
1, 2,  
3
IIL  
Low Level Input  
Current (LE, FC,  
PWDN)  
VIL = 0, Vcc = 5.5V  
-100  
uA  
1, 2,  
3
IDO-Tri  
Charge Pump  
0.5V < Vdo < 3.1V, Vcc = Vp = 3.6V  
-2.5  
-25  
2.5  
25  
nA  
nA  
uA  
1, 3  
TRI-STATE Current  
2
1
Icc_pwdn  
ICC_pwdn  
Power Down  
current  
Vcc = 2.7V  
3
3
-20  
20  
Power Down  
Current  
Vcc = 2.7V  
-20  
20  
uA  
mA  
mA  
mA  
mA  
1
IDO-Source Charge Pump  
Output Current  
Vcc = Vp = 2.7V, Vdo = 1.35V  
Vcc = Vp = 5.0V, Vdo = 2.5V  
Vcc = Vp = 2.7V, Vdo = 1.35V  
Vcc = Vp = 5.0V, Vdo = 2.5V  
-3.2  
-8.0  
1, 2,  
3
1, 2,  
3
IDO-Sink  
Charge Pump  
Output Current  
3.2  
8.0  
1, 2,  
3
1, 2,  
3
4
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
Electrical Characteristics  
DC PARAMETERS:(Continued)  
(The following conditions apply to all the following parameters, unless otherwise specified.)  
AC: Vcc = 2.7V, Vp = 2.7V  
PIN-  
NAME  
SUB-  
GROUPS  
SYMBOL  
PARAMETER  
CONDITIONS  
NOTES  
MIN  
MAX UNIT  
IDO vs VDO Charge Pump  
Output Current  
Magnitude  
Vcc = Vp = 5.0V, 0.5V < Vdo < 4.5V  
15  
%
1, 2,  
3
Variation vs  
Voltage  
IDOsink vs Charge Pump  
Vcc = Vp = 5.0V, VDO = 2.5V  
10  
%
1, 2,  
3
IDOsource  
Output Current  
Sink vs Source  
Mismatch  
VOH  
VOL  
High Level Output IOH = -1.0mA  
Voltage  
2
2
Vcc  
V
1, 2,  
3
-0.8  
Low Level Output IOL = 1.0mA  
Voltage  
0.4  
0.4  
100  
V
1, 2,  
3
VOH  
(OSCout)  
High Level Output IOH = -200uA, Vcc = Vp = 3.0V  
Voltage  
Vcc  
-0.8  
V
1, 2,  
3
VOL  
(OSCout)  
Low Level Output IOL = 200uA, Vcc = Vp = 3.0V  
Voltage  
V
1, 2,  
3
IOL  
Open Drain Output VOL = 0.4V  
Current (PHP)  
4
1.0  
mA  
uA  
1, 2,  
3
IOH  
Open  
VOH = 5.5V  
1, 2,  
3
5
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
Electrical Characteristics  
AC PARAMETERS:  
PIN-  
NAME  
SUB-  
SYMBOL  
tCS  
PARAMETER  
CONDITIONS  
NOTES  
MIN  
50  
MAX UNIT  
GROUPS  
Data to Clock  
Setup Time  
See Data Input Timing for Figure 3  
4
nS  
9, 10,  
11  
tCH  
Data to Clock  
Hold Time  
See Data Input Timing for Figure 3  
4
4
4
4
4
5
5
4
10  
nS  
nS  
nS  
nS  
nS  
9, 10,  
11  
tCWH  
tCWL  
tES  
Clock Pulse Width See Data Input Timing for Figure 3  
High  
50  
9, 10,  
11  
Clock Pulse Width See Data Input Timing for Figure 3  
Low  
50  
9, 10,  
11  
Clock to Enable  
Setup Time  
See Data Input Timing for Figure 3  
50  
9, 10,  
11  
tEW  
Enable Pulse  
Width  
See Data Input Timing for Figure 3  
50  
9, 10,  
11  
fIN  
Maximum Operating Divide Ratio 193, fout (diff) = +322Hz  
Frequency  
1.2  
1.2  
-15  
GHz 9, 10,  
11  
Divide Ratio 385, fout (diff) = +243Hz  
GHz 9, 10,  
11  
Pfin  
Input Sensitivity Vcc = 2.7V  
+5  
dBm 9, 10,  
11  
Vcc = 5.5V  
4
4
3
-9  
-7  
+6  
dBm 9, 10  
dBm 11  
+6  
Locktime  
Freq. Jump 51MHz (f = 864 to 915Mhz),  
lock time within +5KHz, Vcc = Vp =  
5.0V  
500  
uS  
9
Phase Noise  
fop = 900Mhz at 1KHz offset, Vcc = Vp  
= 5.0V  
3
3
3
-70  
-70  
-60  
dBc 9  
dBc 9  
dBc 9  
fop = 900Mhz at 10KHz offset, Vcc = Vp  
= 5.0V  
Spurs  
fop = 900Mhz, fref = 200KHz, Vcc = Vp  
= 5.0V  
DC PARAMETERS: DRIFT VALUES  
(The following conditions apply to all the following parameters, unless otherwise specified.)  
DC: Delta calculations performed on -MLS devices at group B, subgroup 5.  
Icc_pwdn  
Ido_tri  
Power Down  
current  
Vcc=2.7V  
3
3
3
-20  
20  
uA  
uA  
pA  
1
1
1
Vcc=5.5V  
-40  
40  
Charge Pump  
0.5V<Vdo<3.1V, Vcc=Vp=3.6V *or +100%  
-250  
250*  
Tri-State current of initial value whichever is greater  
Note 1: Except fIN and OSCin.  
Note 2: Except OSCout.  
Note 3: QMLV/MLS only  
Note 4: Used as Setup Conditions for Functional Testing.  
6
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
(Continued)  
Note 5: The limits shown are the maximum operating frequency. It is tested by dividing the  
1.2GHz by the divide ratio in the condition column and measuring the difference  
between output frequency pin and the expected output frequency.  
7
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
Graphics and Diagrams  
GRAPHICS#  
DESCRIPTION  
06346HRA3  
AN00035A  
P000390A  
WG20ARB  
CERPACK, 20 LEAD GULL WING (B/I CKT)  
(LMX2305/15/25) TIMING DIAGRAM  
CERAMIC SOIC (WG), 20 LEAD (PINOUT)  
CERPACK, 20 LEAD GULL WING (P/P DWG)  
See attached graphics following this page.  
8
CONTROL BIT: LSB  
CONTROL BIT: LSB  
N18: MSB  
N1  
N17  
N10  
N9  
DATA  
CLK  
(R15: MSB)  
(R14)  
(R7)  
(R6)  
(R1)  
(R8)  
tCWL  
LE  
tES  
tEW  
OR  
tCWH  
tCS  
tCH  
LE  
figure 3  
AN00035A  
Notes:  
1. Parenthesis data indicates programmable reference divider data.  
2. Data shifted into register in clock rising edges.  
3. Data is shifted in MSB first.  
MIL/AEROSPACE OPERATIONS  
2900 SEMICONDUCTOR DRIVE  
SANTA CLARA, CA 95050  
OSC  
1
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
φ
IN  
R
N/C  
2
PWDN  
φ
3
OSC  
P
OUT  
V
4
F
OUT  
P
V
BISW  
5
CC  
D
6
FC  
O
7
LE  
GND  
LD  
DATA  
8
N/C  
9
N/C  
F
10  
IN  
CLOCK  
LMX2315WG  
20 - LEAD CERAMIC SOIC  
CONNECTION DIAGRAM  
TOP VIEW  
P000390A  
MIL/AEROSPACE OPERATIONS  
2900 SEMICONDUCTOR DRIVE  
SANTA CLARA, CA 95050  
MICROCIRCUIT DATA SHEET  
MNLMX2315-X REV 2B1  
Revision History  
Rev ECN # Rel Date Originator Changes  
0A0  
M0002486 03/16/99  
Rose Malone  
Initial Release of MDS:  
1A1  
M0003258 07/30/99  
Rose Malone  
Update MDS: MNLMX2315-X, Rev. 0A0 to MNLMX2315-X, Rev.  
1A1. Moved Reference to Controlling Document to  
Features Section. Added Power Dissipation and Junction  
Temperature reference to Absolute Section. Changed  
Electrical Conditions for VIH, VIL, IDO-Tri, IDO vs  
VDO, IDOsink vs IDOsource, VOH(OSCout), VOL(OSCout)  
and IOL. Added NOTE 4 to VIH, VIL, IOL, fIN and Pfin.  
Updated B/I graphic.  
2A1  
2B1  
M0003448 03/10/00  
M0003628 03/10/00  
Rose Malone  
Update MDS: MNLMX2315-X, Rev. 1A1 to MNLMX2315-X, Rev.  
2A1. Deleted Vosc Electrical parameter, Corrected typo  
in parameter field for IIH from High Level Input  
Current (LE, PC, PWDN) to High Level Input Current  
(LE, FC, PWDN) and IIL from Low Level Input Current  
(LE, PC, PWDN) to Low Level Input Current (LE, FC,  
PWDN). Added Condition to fIN Parameter, NOTE 4 and  
NOTE 5.  
Shaw Mead  
Added device LMX2315WG-MLS and added drift table in  
electrical parameters listing.  
9

相关型号：

LMX2316

 PLLatinum⑩ Low Power Frequency Synthesizer for RF Personal Communications
NSC

LMX2316LBX

 FREQUENCY SYNTHESIZER|BICMOS|LLCC|16PIN|PLASTIC
ETC

LMX2316MWC

 PLL FREQUENCY SYNTHESIZER, 1200 MHz, UUC
TI

LMX2316SLBX

 PLLatinum⑩ Low Power Frequency Synthesizer for RF Personal Communications
NSC

LMX2316TM

 PLLatinum⑩ Low Power Frequency Synthesizer for RF Personal Communications
NSC

LMX2316TM/NOPB

 PLL FREQUENCY SYNTHESIZER, 1200MHz, PDSO16, 0.173 INCH, PLASTIC, TSSOP-16
ROCHESTER

LMX2316TMX

 PLLatinum⑩ Low Power Frequency Synthesizer for RF Personal Communications
NSC

LMX2316TMX

 PLL FREQUENCY SYNTHESIZER, 1200 MHz, PDSO16, 0.173 INCH, PLASTIC, TSSOP-16
ROCHESTER

LMX2316TMX/NOPB

 PLL FREQUENCY SYNTHESIZER, 1200MHz, PDSO16, 0.173 INCH, LEAD FREE, PLASTIC, TSSOP-16
TI

LMX2320

 Frequency Synthesizer for RF Personal Communications
NSC

LMX2320TM

 Frequency Synthesizer for RF Personal Communications
NSC

LMX2320TMX

 Frequency Synthesizer for RF Personal Communications
NSC
©2020 ICPDF网 联系我们和版权申明