LMX2571SRHHTEP [TI]
具有 FSK 调制功能的增强型 1.34GHz、低功耗、极端温度 RF 合成器 | RHH | 36 | -55 to 125;型号: | LMX2571SRHHTEP |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有 FSK 调制功能的增强型 1.34GHz、低功耗、极端温度 RF 合成器 | RHH | 36 | -55 to 125 |
文件: | 总67页 (文件大小:3807K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LMX2571-EP
ZHCSP40B –OCTOBER 2021 –REVISED JUNE 2022
具有FSK 调制功能的LMX2571-EP 低功耗、高性能PLLatinum™ 射频合成器
1 特性
3 说明
• VID#:V62/21613-01XE
• -55 °C 至+125 °C 工作温度
• 10MHz 至1344MHz 范围内的任何频率
• 低相位噪声和毛刺
LMX2571-EP 器件是一款低功耗、高性能的宽带
PLLatinum™ 射频合成器,该器件集成了 Δ-Σ 分数 N
PLL、多核电压控制振荡器(VCO)、可编程输出分频器
和两个输出缓冲器。VCO 内核的工作频率高达
5.376GHz , 持续输出频率范围为 10MHz
1344MHz。
至
– -123dBc/Hz(在480MHz 且偏移为12.5kHz
时)
– -145dBc/Hz(在480MHz 且偏移为1MHz 时)
– 标准PLL 本底噪声为–231dBc/Hz
– 杂散优于–75dBc/Hz
该合成器还可搭配外部 VCO 使用。在此配置下,需使
用专用的5V 电荷泵和输出分频器。
该合成器还包含一个独特的可编程乘法器,有助于去除
毛刺,即使毛刺落在整数边界,系统也仍能够使用任一
通道。
• 新型FastLock 技术,缩短了锁定时间
• 新型整数边界毛刺去除技术
• 集成5V 电荷泵和输出分频器,用于外部VCO 操作
• 2、4 和8 电平或者任意电平数直接数字FSK 调制
• 一个TX/RX 输出或两个扇出输出
• 低电流消耗
输出具有集成式 SPDT 开关,可用作 FDD 无线电应用
中的发送和接收开关。并且可同时导通两个开关,以便
同时提供双输出。
– 39mA 典型合成器模式(内部VCO)
– 9mA 典型PLL 模式(外部VCO)
• 24 位分数N Δ-Σ调制器
通过编程或引脚,LMX2571-EP 可支持直接数字 FSK
调制。此外,还支持离散电平 FSK、脉冲成形 FSK 以
及模拟FM 调制。
• LMX2571 与LMX2571-EP 之间的功能差异
– LMX2571-EP 没有TrCtl 引脚
– LMX2571-EP 没有OSCin* 引脚、差分模式和晶
振模式
该合成器采用了全新的 FastLock 技术,即使在外部
VCO 与窄带回路滤波器搭配使用时,用户也能够在不
到1.5ms 的时间内从一个频率切换至另一频率。
器件信息(1)
2 应用
封装尺寸(标称值)
器件型号
封装
• 导引头前端
• 国防无线电
• 飞行器驾驶舱显示屏
• 飞行控制单元
• 无线基础设施
LMX2571-EP
V62/21613-01XE
VQFN (36)
6.00mm × 6.00mm
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
Vcc3p3VccIO
VcpExt
CPout
Power
supply
5-V CP
supply
CP
MUX
Int. charge
pump
Output
divider
OP
MUX
RFoutTx
Phase
detector
OSCin
R-divider
Prescaler
N-divider
Fast
lock
5-V charge
pump
VCO
MUX
Output
divider
Lock
dect
µWIRE
SPI
Enable
CE
RFoutRx
modulator
FSK
FLout
CPoutExt
Fin
MUXout
简化版原理图
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SNAS824
LMX2571-EP
ZHCSP40B –OCTOBER 2021 –REVISED JUNE 2022
www.ti.com.cn
Table of Contents
7.6 Register Maps...........................................................20
8 Application and Implementation..................................39
8.1 Application Information............................................. 39
8.2 Typical Applications.................................................. 46
8.3 Do's and Don'ts.........................................................55
9 Power Supply Recommendations................................56
10 Layout...........................................................................57
10.1 Layout Guidelines................................................... 57
10.2 Layout Example...................................................... 57
11 Device and Documentation Support..........................58
11.1 Device Support........................................................58
11.2 Documentation Support.......................................... 58
11.3 接收文档更新通知................................................... 58
11.4 支持资源..................................................................58
11.5 Trademarks............................................................. 58
11.6 Electrostatic Discharge Caution..............................58
11.7 术语表..................................................................... 58
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................5
6.5 Electrical Characteristics.............................................5
6.6 Timing Requirements..................................................8
6.7 Timing Diagrams.........................................................8
6.8 Typical Characteristics................................................9
7 Detailed Description......................................................12
7.1 Overview...................................................................12
7.2 Functional Block Diagram.........................................12
7.3 Feature Description...................................................13
7.4 Device Functional Modes..........................................18
7.5 Programming............................................................ 18
Information.................................................................... 58
4 Revision History
Changes from Revision A (December 2021) to Revision B (June 2022)
Page
• 删除了对TrCtl 引脚的所有引用...........................................................................................................................1
• 删除了“差分模式”........................................................................................................................................... 1
• 删除了“晶振模式”........................................................................................................................................... 1
• Redefined the OSCin* pin to NC........................................................................................................................ 3
• Added the Differences Between the LMX2571 and LMX2571-EP section.......................................................13
Changes from Revision * (October 2021) to Revision A (December 2021)
Page
• 将数据表状态从“预告信息”更改为:量产数据................................................................................................ 1
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5 Pin Configuration and Functions
图5-1. RHH Package 36-Pin VQFN Top View
表5-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
Bypass1
Bypass2
CE
NO.
2
Bypass Place a 100-nF capacitor to GND.
Bypass Place a 100-nF capacitor to GND.
3
19
11
25
30
Input
Chip Enable input. Active HIGH powers on the device.
MICROWIRE clock input.
CLK
Input
CPout
Output Internal VCO charge pump access point to connect to a 2nd order loop filter.
CPoutExt
Output 5-V charge pump output used in PLL mode (external VCO).
DAP
GND
12
GND
Input
The DAP should be grounded.
MICROWIRE serial data input.
DATA
High-frequency, AC-coupled input pin for an external VCO. Leave it open or AC-coupled to GND if not
being used.
Fin
24
Input
FSK_D0
FSK_D1
FSK_D2
FSK_DV
FLout1
FLout2
GND
7
Input
Input
Input
Input
FSK data bit 0 (FSK PIN mode) / I2S FS input (FSK I2S mode).
FSK data bit 1 (FSK PIN mode) / I2S DATA input (FSK I2S mode).
FSK data bit 2 (FSK PIN mode).
6
5
4
FSK data valid input (FSK PIN mode) / I2S CLK input (FSK I2S mode).
29
28
23
31
35
13
10
Output FastLock output control 1 for external switch. Output is HIGH when F1 is selected.
Output FastLock output control 2 for external switch. Output is HIGH when F2 is selected.
GND
GND
GND
Input
VCO ground.
GND
Charge pump ground.
OSCin ground.
GND
LE
MICROWIRE latch enable input.
MUXout
Output Multiplexed output that can be assigned to lock detect or readback serial data output.
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表5-1. Pin Functions (continued)
PIN
TYPE
DESCRIPTION
NAME
NC
NO.
14, 26
34
NC
Input
NC
Leave floating, do not connect to GND or power supply.
Reference clock input.
OSCin
NC
8,18, 36
16
These pins may be left floating or connected to GND.
RFoutRx
RFoutTx
Output RF output used to drive receive mixer. Selectable open-drain or push-pull output.
Output RF output used to drive transmit signal. Selectable open-drain or push-pull output.
17
1, 9, 20,
27
Vcc3p3
VccIO
Supply Connect to 3.3-V supply.
15, 33
32
Supply Supply for digital logic interface. Connect to 3.3-V supply.
Supply for 5-V charge pump. Connect to 5-V supply in PLL mode. Connect to either 3.3-V or 5-V
supply in synthesizer mode.
VcpExt
Supply
VrefVCO
VregVCO
22
21
Bypass LDO output. Place a 100-nF capacitor to GND.
Bypass Bias circuitry for the VCO. Place a 2.2-µF capacitor to GND.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
MAX
3.6
UNIT
V
VCC
VIO
VCP
VIN
TJ
Power supply voltage
IO supply voltage
3.6
V
Charge pump supply voltage
IO input voltage
5.25
V
VCC + 0.3
150
V
Junction temperature
Storage temperature
°C
°C
–55
–65
Tstg
150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001, all pins(1)
±1500
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per ANSI/ESDA/
JEDEC JS-002, all pins(2)
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
3.45
VCC
5
UNIT
VCC
VIO
Power supply voltage
IO supply voltage
3.15
3.3
V
V
PLL mode (external VCO)
VCP
TA
Charge pump supply voltage
Ambient temperature
V
Synthesizer mode (internal VCO)
VCC
5
125
°C
–55
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6.4 Thermal Information
LMX2571-EP
THERMAL METRIC(1)
NJK (WQFN)
36 PINS
32.9
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
14.5
6.3
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.2
ΨJT
6.3
ΨJB
RθJC(bot)
2.0
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
3.15 V ≤VCC ≤3.45 V, VIO = VCC, –55 °C ≤TA ≤125 °C, except as specified. Typical values are at VCC = VIO = 3.3 V,
VCP = 3.3 V or 5 V in synthesizer mode, VCP = 5 V in PLL mode, TA = 25 °C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CURRENT CONSUMPTION
Configuration A(1)
39
44
46
51
9
Configuration B(2)
Configuration C(3)
Configuration D(4)
Configuration E(5)
Configuration F(6)
Configuration G(7)
ICC
Synthesizer mode
fOUT = 480 MHz, SE
OSCIN
mA
mA
IPLL
PLL mode
15
21
CE = 0 V or POWERDOWN = 1, VCC = 3.3
V, Push-pull output
IPD
Powerdown
0.9
OSCIN REFERENCE INPUT
fOSCIN
Input frequency
Input voltage(8)
10
150
3.3
MHz
V
VOSCIN
0.8
REFERENCE INPUT PROGRAMMABLE MULTIPLIER
fMULTin
fMULTout
PLL
MULT input frequency
MULT output frequency
10
60
30
MULT > Pre-divider
MHz
MHz
130
fPD
Phase detector frequency
Charge pump current(9)
10
130
Internal charge
pump
312.5
625
Programmable
minimum value
5-V charge pump
Internal charge
pump
312.5
625
Per programmable
step
KPD
µA
5-V charge pump
Internal charge
pump
7187.5
6875
Programmable
maximum value
5-V charge pump
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3.15 V ≤VCC ≤3.45 V, VIO = VCC, –55 °C ≤TA ≤125 °C, except as specified. Typical values are at VCC = VIO = 3.3 V,
VCP = 3.3 V or 5 V in synthesizer mode, VCP = 5 V in PLL mode, TA = 25 °C.
PARAMETER
TEST CONDITIONS
MIN
TYP
–124
–120
–231
–226
MAX
UNIT
Internal charge
pump
PNPLL_1/f
Normalized PLL 1/f noise(10)
5-V charge pump
At maximum charge
pump current
dBc/Hz
Internal charge
pump
PNPLL_FLAT Normalized PLL noise floor(10)
5-V charge pump
EXTVCO_CHDIV = 1
100
100
100
–10
–5
0
2000
1900
1400
fRFIN
External VCO input frequency(11)
External VCO input power
EXTVCO_CHDIV = 8, 10
MHz
dBm
EXTVCO_CHDIV = 2, 3, 4, 5, 6, 7, 9
0.1 GHz ≤fRFIN < 1 GHz
1 GHz ≤fRFIN ≤1.4 GHz
1.4 GHz < fRFIN ≤2 GHz
PRFIN
VCO
fVCO
VCO frequency
VCO gain(12)
4300
5376
165
MHz
KVCO
fVCO = 4800 MHz
56
MHz/V
VCO not being recalibrated, –40 °C ≤TA
≤125 °C
Allowable temperature drift(13)
VCO calibration time
°C
µs
|ΔTCL
|
fOSCIN = fPD = 100
MHz
tVCOCAL
140
100 Hz offset
1 kHz offset
–32.4
–62.3
10 kHz offset
fOUT = 480 MHz
–92.1
PNVCO
Open loop VCO phase noise
dBc/Hz
100 kHz offset
–121.1
–144.5
–156.8
1 MHz offset
10 MHz offset
Outputs
Synthesizer mode
10
10
1344
1400
fOUT
RF output frequency
MHz
PLL mode, RF output from buffer
PTX, PRX
H2RFout
RF output power
Second harmonic
0
dBm
dBc
Power control bit =
fOUT = 480 MHz
6
–25
DIGITAL FSK MODULATION
FSKLevel
FSKBaud
FSKDev
FSK level(14)
FSK PIN mode
2
8
FSK baud rate(15)
Loop bandwidth = 200 kHz
Configuration H(16)
100
±39
kSPs
kHz
FSK deviation
DIGITAL INTERFACE
VIH
VIL
IIH
High-level input voltage
1.4
VCC
0.4
25
V
V
Low-Level input voltage
High-level input current
Low-Level input current
High-level output voltage
Low-level input voltage
VIH = 1.75 V
VIL = 0 V
µA
µA
V
–25
–25
2
IIL
25
VOH
VOL
IOH = 500 μA
IOL = –500 μA
0
0.4
V
(1) fOSCIN = 19.44 MHz, MULT = 1, Prescaler = 4, fPD = 19.44 MHz, one RF output, output type = push pull, output power = –3 dBm
(2) fOSCIN = 19.44 MHz, MULT = 1, Prescaler = 2, fPD = 19.44 MHz, one RF output, output type = push pull, output power = –3 dBm
(3) fOSCIN = 19.44 MHz, MULT = 5, Prescaler = 2, fPD = 19.44 MHz, one RF output, output type = push pull, output power = –3 dBm
(4) fOSCIN = 19.44 MHz, MULT = 5, Prescaler = 2, fPD = 97.2 MHz, one RF output, output type = push pull, output power = –3 dBm
(5) fOSCIN = 19.44 MHz, MULT = 1, fPD = 19.44 MHz, output from VCO
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(6) fOSCIN = 19.44 MHz, MULT = 1, fPD = 19.44 MHz, one RF output, output type = push pull, output power = –3 dBm
(7) fOSCIN = 19.44 MHz, MULT = 1, fPD = 19.44 MHz, two RF outputs, output type = push pull, output power = –3 dBm
(8) See OSCIN Configuration for definition of OSCIN input voltage.
(9) This is referring to the total base charge pump current. In PLL mode, this is equal to EXTVCO_CP_IDN + EXTVCO_CP_IUP. In
synthesizer mode, this is equal to CP_IDN + CP_IUP.
(10) Measured with a clean OSCIN signal with a high slew rate using a wide loop bandwidth. The noise metrics model the PLL noise for
an infinite loop bandwidth as:
PLL_Total = 10 * log[10(PLL_Flat / 10) + 10(PLL_Flicker / 10)
PLL_Flat = PN1Hz + 20 * log(N) + 10 * log(fPD
]
)
PLL_Flicker = PN10kHz –10 * log(Offset / 10 kHz) + 20 * log(fOUT / 1 GHz)
(11) For external VCO frequencies above 1.4 GHz, there are restrictions on the output divider and register R70 needs to be programmed
to 0x046110.
(12) The VCO gain changes as a function of the VCO core and frequency. See Integrated VCO for details.
(13) Not tested in production. Ensured by characterization. Allowable temperature drift refers to programming the device at an
initial temperature and allowing this temperature to drift WITHOUT reprogramming the device, and still have the device stay in lock.
This change could be up or down in temperature and the specification does not apply to temperatures that go outside the
recommended operating temperatures of the device.
(14) The data showed here simply specifies the range of discrete FSK level that is supported in PIN mode. PIN mode supports 2-, 4- and 8-
level of FSK modulation. If arbitrary level of FSK modulation is desired, use FSK SPI™ FAST mode or FSK I2S mode. See Direct
Digital FSK Modulation for details.
(15) The baud rate is limited by the loop bandwidth of the PLL loop. As a general rule of thumb, it is desirable to have the loop bandwidth
at least twice the baud rate.
(16) fPD = 100 MHz, DEN = 224, CHDIV1 = 5, CHDIV2 = 2, Prescaler = 2, FSK step value = 32716, 32819. The maximum
achievable frequency deviation depends on the configuration, see Direct Digital FSK Modulation for details.
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6.6 Timing Requirements
3.15 V ≤VCC ≤3.45 V, VIO = VCC, –55 °C ≤TA ≤125 °C, except as specified. Typical values are at VCC = VIO = 3.3 V, TA
= 25 °C.
MIN
NOM
MAX
UNIT
Timing Requirements
tES
CLK to LE low time
5
2
ns
ns
ns
ns
ns
ns
ns
ns
tCS
DATA to CLK setup time
DATA to CLK hold time
CLK pulse width high
CLK pulse width low
tCH
2
tCWH
tCWL
tCES
tEWH
tOD
10
10
5
See Figure 6-1
LE to CLK setup time
LE pulse width high
2
CLK to MUXOUT delay time
8
6.7 Timing Diagrams
There are several other considerations for programming:
• A slew rate of at least 30 V/µs is recommended for the CLK, DATA and LE. The same apply for other digital
control signals such as FSK_D[0:2] and FSK_DV signals.
• The DATA is clocked into a shift register on each rising edge of the CLK signal. On the rising edge of the 24th
CLK, the data is transferred from the data field to the selected register bank.
• The LE pin may be held high after programming, causing the LMX2571-EP to ignore clock pulses.
• When CLK or DATA lines are shared between devices, it is recommended to divide down the voltage to the
CLK, DATA, and LE pins closer to the minimum voltage. This provides better noise immunity.
• If the CLK and DATA lines are toggled while the VCO is in lock, as is sometimes the case when these lines
are shared with other parts, the phase noise may be degraded during the time of this programming.
MSB
tCS tCH
LSB
DATA
CLK
LE
tCWL
tCWH
tES
tCES
tEWH
图6-1. MICROWIRE Timing Diagram
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6.8 Typical Characteristics
at TA = 25°C (unless otherwise noted)
OSCin = 19.44 MHz
fOUT = 200 MHz Synthesizer mode
OSCin = 19.44 MHz
fOUT = 500 MHz Synthesizer mode
图6-2. Typical Closed-Loop Phase Noise
图6-3. Typical Closed-Loop Phase Noise
OSCin = 19.44 MHz
fOUT = 900 MHz Synthesizer mode
OSCin = 19.44 MHz
fOUT = 1200 MHz Synthesizer mode
图6-4. Typical Closed-Loop Phase Noise
图6-5. Typical Closed-Loop Phase Noise
FSKBaud = 4.8 kSPS
FSK PIN mode
Reference clock is a FM modulated signal with fMOD = 2.4 kHz
图6-6. 4FSK Direct Digital Modulation
图6-7. FM Modulation Through Reference Clock
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6.8 Typical Characteristics (continued)
at TA = 25°C (unless otherwise noted)
Switching between int. and ext. VCO as well as Tx and Rx
port
Freq. jump = 50 MHz
.
LBW = 4 kHz
PLL mode
图6-8. Output Port and VCO Switching
图6-9. FastLock With SPST Switch
Start: 100 MHz
图6-10. Fin Input Impedance
Stop: 2000 MHz
Start: 10 MHz
Stop: 300 MHz
图6-11. OSCin Input Impedance
-80
-80
-90
Modeled flicker noise
Modeled flat noise
OSCin noise
Modeled flicker noise
Modeled flat noise
OSCin noise
-90
Model total noise
Actual measurement
Modeled total noise
Actual measurement
-100
-110
-120
-130
-140
-150
-160
-100
-110
-120
-130
-140
-150
-160
102
103
104
105
106
107
102
103
104
105
106
107
Offset /Hz
Offset /Hz
fOUT = 1228.8 MHz
fPD = 122.88 MHz
Synthesizer mode
fOUT = 430.08 MHz
fPD = 61.44 MHz
PLL mode
图6-12. Normalized PLL 1/f Noise and Noise Floor
图6-13. Normalized PLL 1/f Noise and Noise Floor
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6.8 Typical Characteristics (continued)
at TA = 25°C (unless otherwise noted)
100
50
single-ended input
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
85
90
95
100
105
110
115
120
125
Continuous Junction TempertureTj (oC)
图6-14. Lifetime vs. Temperature
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7 Detailed Description
7.1 Overview
The LMX2571-EP is a frequency synthesizer with low-noise, high-performance integrated VCOs. The 5-GHz
VCO cores, together with the output channel dividers, can produce frequencies from 10 MHz to 1344 MHz. The
LMX2571-EP supports two operation modes, synthesizer mode and PLL mode. In synthesizer mode, the entire
device is used; in PLL mode the internal VCO is bypassed, and an external VCO is required to implement a
complete synthesizer.
The PLL is a fractional-N PLL with programmable Delta Sigma modulator (first order to fourth order). The
fractional denominator is of variable length and up to 24-bits long, providing a frequency step with very fine
resolution.
The internal VCO can be bypassed, allowing the use of an external VCO. A separate 5-V charge pump is
dedicated for the external VCO, eliminating the need for an op-amp to support 5-V VCOs. A new advanced
FastLock technique is developed to shorten the lock time to less than 1.5 ms, even there is a very narrow loop
bandwidth.
A unique programmable multiplier is incorporated in the R-divider. The multiplier is used to avoid and reduce
integer boundary spurs or to increase the phase detector frequency for higher performance.
The LMX2571-EP supports direct digital FSK modulation, thus allowing a change in the output frequency by
changing the N-divider value. The N-divider value can be programmed through MICROWIRE interface or
through pins. Discrete 2-, 4- and 8-level FSK, as well as arbitrary-level FSK, are supported. Arbitrary-level FSK
can be used to construct pulse-shaping FSK or analog-FM modulation.
The output has an integrated T/R switch, and the divided-down internal or external VCO signal can be output to
either the TX port or the RX port. The switch can also be configured as a 1:2 fanout buffer, providing the signal
on both outputs at the same time. In addition to port switching, the output frequency can be switched between
two pre-defined frequencies, F1 and F2, simultaneously. This feature is ideal for use in FDD duplex system
where the TX frequency is different from RX (LO) frequency.
The LMX2571-EP requires only a single 3.3-V power supply. Digital logic interface is 1.8-V input compatible. The
analog blocks power supplies use integrated LDOs, eliminating the need for high performance external LDOs.
Programming of the device is achieved through the MICROWIRE interface. The device can be powered down
through a register programming or toggling the Chip Enable (CE) pin.
7.2 Functional Block Diagram
Vcc3p3VccIO
VcpExt
CPout
Power
supply
5-V CP
supply
CP
MUX
Int. charge
pump
Output
divider
OP
MUX
RFoutTx
Phase
detector
OSCin
R-divider
Prescaler
N-divider
Fast
lock
5-V charge
pump
VCO
MUX
Output
divider
Lock
dect
µWIRE
SPI
Enable
CE
RFoutRx
modulator
FSK
FLout
CPoutExt
Fin
MUXout
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7.3 Feature Description
7.3.1 Differences Between the LMX2571 and LMX2571-EP
For both devices, pin 8 is not connected to the die and pins 14 and 26 are. However, tor the LMX2571-EP, both
Pin 36 and Pin 18 are different and are true no connect pins, meaning that this pin is not connected to the die.
This impacts some of the functionality of the device.
表7-1. Differences Between LMX2571 and LMX2571-EP
Aspect
Details
LMX2571
LMX2571-EP
Pin 36
OSCin*
NC. There is no connection to the die.
Not Supported
R34[14]=0
One may drive OSCin and pin 36 with a
differential signal, but pin 36 is high
impedance (open) and the signal is ignored
at this pin.
Supported
R34[14]=IPBUF_SE_DIFF_SEL
Differential Input
Reference Input
Supported
R34[10]=XTAL_EN
Not Supported
R34[10]=0
Crystal Mode
Pin 18
R34[11]=XTAL_PWRCTRL
R34[11]=2
TrCtl
NC. There is no connection to the die.
Supported
R0[8]=F1F2_CTRL
Software Only
R0[8]=0
Rx/Tx Switching
Pin Switching
R0[10]=RXTX_POL
R0[11]=RXTX_CTL
R0[10]=0
R0[11]=0
7.3.2 Reference Oscillator Input
The OSCin pin is used as frequency reference input to the device. The OSCin pin can be driven single-ended
with a CMOS clock.
The OSCin signal is used as a clock for VCO calibration, therefore a proper signal must be applied at the OSCin
pin at the time of programming the R0 register. A higher slew rate tends to yield the best fractional spurs and
phase noise, so a square wave signal is best for the OSCin pin. If using a sine wave, higher frequencies tend to
yield better phase noise and fractional spurs due to their higher slew rates.
7.3.3 R-Dividers and Multiplier
The R-divider consists of a Pre-divider, a Multiplier (MULT), and a Post-divider.
Pre-
divider
Post-
divider
MULT
OSCin
Phase detector
图7-1. R-Divider
Both the Pre- and Post-dividers divide frequency down while the MULT multiplies frequency up. The purpose of
adding a multiplier is to avoid and reduce integer boundary spurs or to increase the phase-detector frequency for
higher performance. See MULT Multiplier for details. The phase detector frequency, fPD, is therefore equal to
fPD = (fOSCin / Pre-divider) × (MULT / Post-divider)
(1)
When using the Multiplier (MULT > 1), there are some points to remember:
• The Multiplier must be greater than the Pre-divider.
• Using the multiplier may add noise, especially for multiplier values greater than 6.
7.3.4 PLL Phase Detector and Charge Pump
The phase detector compares the outputs of the Post-divider and N-divider and generates a correction current
corresponding to the phase error. This charge pump current is programmable to different strengths. The pump
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up and pump down currents are individually programmable, but should always programmed to the same value.
The effective charge pump current is the sum of the up and down currents and multiplied by a gain multiplier. In
other words, Effective Charge Pump Current = (Base Charge Pump Current) × (Gain Multiplier)
7.3.4.1 CPout Pin Charge Pump Current
When using internal VCO mode, the charge pump output is the CPout pin and the base charge pump current is
programmable in 156.25 µA increments set by the CP_IUP and CP_IDN fields (see 表 7-2). This value is
doubled and then multiplied by the charge pump gain value specified in 表7-3.
表7-2. Base Charge Pump Current When Using Internal VCO
CP_IUP, CP_IDN
BASE CHARGE PUMP CURRENT (µA)
0
Tri-State
156.25
312.5
1
2
3
...
468.75.
...
7
1093.75
1250
8 or 16
9 or 17
...
1406.25
15 or 23
24
2343.75
2500
25
2656.25
...
31
3593.75
表7-3. Charge Pump Gain Multiplier When Using Internal VCO
CP_GAIN
GAIN MULTIPLIER
0
1
2
3
1X
2X
1.5X
2.5X
7.3.4.2 Charge Pump Current When Using External VCO
When using external VCO mode, the charge pump output is the CPoutExt pin and the base charge pump current
is programmable in 312.5 µA increments set by the EXTVCO_CP_IUP and EXTVCO_CP_IDN fields as shown
in 表 7-4. Odd values for EXTVCO_CP_IUP and EXTVCO_CP_IDN are not valued. This value is doubled and
then multiplied by the charge pump gain value specified in 表7-5.
表7-4. Base Charge Pump Current in External VCO Mode
EXTVCO_CP_IUP, EXTVCO_CP_IDN
BASE CHARGE PUMP CURRENT (µA)
0
2
Tri-state
312.5
625
4
6
937.5
1250
8 or 16
10 or 18
12 or 20
14 or 22
24
1562.5
1875
2187.5
2500
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表7-4. Base Charge Pump Current in External VCO Mode (continued)
EXTVCO_CP_IUP, EXTVCO_CP_IDN
BASE CHARGE PUMP CURRENT (µA)
26
28
30
2812.5
3125
3437.5
表7-5. Charge Pump Gain Multiplier in External VCO Mode
EXTVCO_CP_GAIN
CHARGE PUMP GAIN MULTIPLIER
0
1
2
3
1X
2X
1.5X
2.5X
7.3.5 PLL N-Divider and Fractional Circuitry
The total N-divider value is determined by Ninteger + NUM / DEN. The N-divider includes fractional compensation
and can achieve any fractional denominator (DEN) from 1 to 16,777,215 (224 – 1). The integer portion, Ninteger
,
is the whole part of the N-divider value and the fractional portion, Nfrac = NUM / DEN, is the remaining fraction.
Ninteger, NUM and DEN are programmable.
The order of the delta sigma modulator is also programmable from integer mode to fourth order. There are
several dithering modes that are also programmable. Dithering is used to reduce fractional spurs. In order to
make the fractional spurs consistent, the modulator is reset any time that the R0 register is programmed.
7.3.6 Partially Integrated Loop Filter
The LMX2571-EP integrates the third and fourth pole of the loop filter. The values for the resistors can be
programmed independently through the MICROWIRE interface. The larger the values of the resistors, the
stronger the attenuation of the internal loop filter. This partially integrated loop filter can only be used in
synthesizer mode.
CPout
Int. charge
pump
100pF
50pF
图7-2. Integrated Loop Filter
7.3.7 Low-Noise, Fully Integrated VCO
The LMX2571-EP includes a fully integrated VCO. The VCO generates a frequency which varies with the tuning
voltage from the loop filter. Output of the VCO is fed to a prescaler before going to the N-divider. The prescaler
value is selectable between 2 and 4. In general, prescaler equals 2 will result in better phase noise especially
when the PLL is operated in fractional-N mode. If the prescaler equals 4, however, the device will consume less
current. The VCO frequency is related to the other frequencies and Prescaler as follows:
fVCO = fPD × N-divider × Prescaler
(2)
To reduce the VCO tuning gain, thus improving the VCO phase noise performance, the VCO frequency range is
divided into several different frequency bands. This creates the need for frequency calibration to determine the
correct frequency band given a desired output frequency. The VCO is also calibrated for amplitude to optimize
phase noise. These calibration routines are activated any time that the R0 register is programmed with the
FCAL_EN bit equals one. It is important that a valid OSCin signal must present before VCO calibration begins.
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This device will support a full sweep of the valid temperature range of 125°C (–40°C to 85°C) without having to
recalibrate the VCO. This is important for continuous operation of the synthesizer under the most extreme
temperature variation.
7.3.8 External VCO Support
The LMX2571-EP supports an external VCO in PLL mode. In PLL mode, the internal VCO and its associated
charge pump are powered down, and a 5-V charge pump is switched in to support external VCO. No extra
external low noise op-amp is required to support 5-V tuning range VCO. The external VCO output can be
obtained directly from the VCO or from the RF output buffer of the device.
7.3.9 Programmable RF Output Divider
The internal VCO RF output divider consists of two sub-dividers; the total division value is equal to the
multiplication of them. As a result, the minimum division is 4 while the maximum division is 448.
Int.
VCO
Ext.
VCO
CHDIV1
4,5,6,7
CHDIV2
1,2,4,8,16,32,64
CHDIV3
1,2,3,Y,9,10
OP MUX
OP MUX
图7-3. VCO Output Divider
There is only one output divider when external VCO is being used. This divider supports even and odd division,
and its values are programmable between 1 and 10.
7.3.10 Programmable RF Output Buffer
The RF output buffer type is selectable between push-pull and open-drain. If the open-drain buffer is selected,
external pullup to VccIO is required. Regardless of output type, output power can be programmed to various
levels. The RF output buffer can be disabled while still keeping the PLL in lock. See RF Output Buffer Type for
details.
7.3.11 Integrated TX, RX Switch
The LMX2571-EP integrates a T/R switch. The output from the internal VCO or external VCO divider will be
routed to either the RFoutTx or RFoutRx ports, depending on the state of the F1F2_SEL bit.
The T/R switch could also be configured as a fanout buffer to output the same signal at both RFoutTx and
RFoutRx ports at the same time. All of these features are also programmable, see Programming for details.
7.3.12 Power Down
The LMX2571-EP can be powered up and down using the CE pin or the POWERDOWN bit. All registers are
preserved in memory and the device may still be programmed when the device is in a powered down state.
When the device comes out of the powered down state, do the following:
1. If it was powered-down by CE pin, pull CE pin HIGH
2. If it was powered-down by POWERDOWN bit, set POWERDOWN = 0 and FCAL_EN = 0
3. Wait for 100-µs to have the internal LDOs settled down
4. Program register R0 with FCAL_EN=1
7.3.13 Lock Detect
The MUXout pin of the LMX2571-EP can be configured to output a signal that indicates when the PLL is being
locked. If lock detect is enabled while the MUXout pin is configured as a lock-detect output, when the device is
locked the MUXout pin output is a logic HIGH voltage. When the device is unlocked, MUXout output is a logic
LOW voltage.
7.3.14 FSK Modulation
Direct digital FSK modulation is supported in LMX2571-EP. FSK modulation is achieved by changing the output
frequency by changing the N-divider value. The LMX2571-EP supports four different types of FSK operation.
1. FSK PIN mode. LMX2571-EP supports 2-, 4-, and 8-level FSK modulation in PIN mode. In this mode,
symbols are directly fed to the FSK_D0, FSK_D1, and FSK_D2 pins. Symbol clock is fed to the FSK_DV pin.
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Symbols are latched into the device on the rising edge of the symbol clock. The maximum supported symbol
clock rate is 1 MHz. The device has eight dedicated registers to prestore the desired FSK frequency
deviations, with each register corresponding to one of the FSK symbols. The LMX2571-EP will change its
output frequency according to the states on the FSK pins; no extra register programming is required.
2. FSK SPI mode. This mode is identical to the FSK PIN mode with the exception that the control for the
selected FSK level is not performed with external pins but with register R34. Each time when register R34 is
programmed, change only the FSK_DEV_SEL field to select the desired FSK frequency deviation as stored
in the dedicated registers.
3. FSK SPI FAST mode. In this mode, instead of selecting one of the prestored FSK level, change the FSK
deviation directly by writing to the register R33, FSK_DEV_SPI_FAST field. As a result, this mode supports
arbitrary-FSK level, which is useful to construct pulse-shaping or analog-FM modulation.
4. FSK I2S mode. This mode is similar to the FSK SPI FAST mode, but the programming format is an I2S
format on dedicated pins instead of SPI. The benefit of using I2S is that this interface could be shared and
synchronous to other digital audio interfaces. The same FSK data input pins that are used in FSK PIN mode
are reused to support I2S programming. In this mode only the 16 bits of DATA field is required to program.
The data is transmitted on the high or low side of the frame sync (programmable in register R34,
FSK_I2S_FS_POL). The unused side of the frame sync needs to be at least one clock cycle. In other words,
17 (16 + 1) CLK cycles are required at a minimum for one I2S frame. Maximum I2S clock rate is 100 MHz.
I2S DATA
(FSK_D1)
MSB
Bit 15
LSB
Bit 0
FSK_D[0:2]
I2S CLK
(FSK_DV)
FSK_DV
I2S FS
(FSK_D0)
图7-4. FSK PIN Mode Timing
图7-5. FSK I2S Mode Timing
See Direct Digital FSK Modulation for FSK operation details.
7.3.15 FastLock
The LMX2571-EP includes a FastLock feature that can be used to improve the lock times in PLL mode when the
loop bandwidth is small. In general, the lock time is approximately equal to 4 divided by the loop bandwidth. If
the loop bandwidth is 1 kHz, then the lock time would be 4 ms. However, if the fPD is much higher than the loop
bandwidth, cycle slipping may occur, and the actual lock time will be much longer. Traditional fastlock usually
reduces lock time by increasing loop bandwidth during frequency switching. However, there is a limitation on the
achievable maximum loop bandwidth due to limitation on charge-pump current and loop filter component values.
In some cases, this kind of fastlock technique will make cycle slip even worse.
The LMX2571-EP adopts a new FastLock approach that eliminates the cycle slip problem. With an external
analog SPST switch in conjunction with FastLock control of the LMX2571-EP, the lock time for a 100-MHz
frequency switch could be settled in less than 1.5 ms. See FastLock With External VCO for details.
7.3.16 Register Readback
The LMX2571-EP allows any of its registers to be read back. The MUXout pin can be programmed to support
either lock-detect output or register-readback serial-data output. To read back a certain register value, follow the
following steps:
1. Set the R/W bit to 1; the data field contents are ignored.
2. Send the register to the device; readback serial data outputs starting at the falling edge of the 8th clock cycle.
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R/W
= 1
Address
7-bit
Data
= Ignored
DATA
CLK
1st
2nd-8th
9th-24th
Read back register value
16-bit
MUXout
LE
图7-6. Register Readback Timing Diagram
7.4 Device Functional Modes
7.4.1 Operation Mode
The device can be operated in synthesizer mode or PLL mode.
1. Synthesizer mode. The internal VCO is adopted.
2. PLL mode. The device is operated as a standalone PLL; an external VCO is required to complete the loop.
7.4.2 Duplex Mode
LMX2571-EP supports fast frequency switching between two predefined register sets, F1 and F2. This feature is
good for duplex operation. The device supports three duplex modes:
1. Synthesizer duplex mode. Both F1 and F2 are operated in synthesizer mode.
2. PLL duplex mode. Both F1 and F2 are operated in PLL mode.
3. Synthesizer/PLL duplex mode. In this mode, F1 and F2 will be operated in different operation mode.
7.4.3 FSK Mode
LMX2571-EP supports four direct digital FSK modulation modes.
1. FSK PIN mode. 2-, 4-, and 8-level FSK modulation. Modulation data is fed to the device through dedicated
pins.
2. FSK SPI mode. 2-, 4-, and 8-level FSK modulation. Pre-defined FSK deviation is selected through SPI
programming.
3. FSK SPI FAST mode. This mode supports arbitrary-level FSK modulation. Desired FSK deviation is written
to the device through SPI programming.
4. FSK I2S mode. Arbitrary-level FSK modulation is supported. Desired FSK deviation is fed to the device
through dedicated pins.
7.5 Programming
The LMX2571-EP is programmed using several 24-bit registers. A 24-bit shift register is used as a temporary
register to indirectly program the on-chip registers. The shift register consists of a data field, an address field,
and a R/W bit. The MSB is the R/W bit. 0 means register write while 1 means register read. The following 7 bits,
ADDR[6:0], form the address field which is used to decode the internal register address. The remaining 16 bits
form the data field DATA[15:0]. While LE is low, serial data is clocked into the shift register upon the rising edge
of clock. Serial data is shifted MSB first into the shift register when programming. When LE goes high, data is
transferred from the data field into the selected active register bank. See 图6-1 for timing diagram details.
7.5.1 Recommended Initial Power on Programming Sequence
When the device is first powered up, it must to be initialized, and the ordering of this programming is important.
The sequence is listed below. After this sequence is completed, the device should be running and locked to the
proper frequency.
1. Apply power to the device and ensure the Vcc pins are at the proper levels.
2. If CE is LOW, pull it HIGH.
3. Wait 100 µs for the internal LDOs to become stable.
4. Ensure that a valid reference is applied to the OSCin pin.
5. Program register R0 with RESET=1. This will ensure all the registers are reset to their default values.
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6. Program in sequence registers R60, R58, R53, …, R1 and then R0.
7.5.2 Recommended Sequence for Changing Frequencies
The recommended sequence for changing frequencies in different scenarios is as follows:
1. If the N-divider is changing, program the relevant registers, then program R0 with FCAL_EN = 1.
2. In FSK SPI mode, FSK SPI FAST mode, and FSK I2S mode, the fractional numerator is changing; program
the relevant registers only.
3. If switching frequency between F1 and F2, program the relevant control registers only toggle the F1F2_SEL
bit.
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7.6 Register Maps
23
22 21 20 19 18 17 16 15
ADDRESS[6:0] DATA[15:0]
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
POR
REG.
R/W
R/W
R/W
R/W
R/W
R60
R58
R53
R47
0
0
0
0
1
1
1
1
1
1
1
0
1
1
0
1
1
0
1
1
0
1
0
1
0
0
1
1
1
1
0
0
0
0
1
1
0
1
0
0
1
0
0
1
1
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
3C4000h
3A0C00h
352802h
2F0000h
0
0
0
DITHERING
VCO_
SEL_
STRT
R46
R42
R/W
R/W
0
0
1
1
0
0
1
1
1
0
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
1
VCO_SEL
2E001Ah
2A0210h
EXTVCO
_CP
_POL
0
0
0
EXTVCO_CP_IDN
CP_IDN
R41
R40
R/W
R/W
0
0
1
1
0
0
1
1
0
0
0
0
1
0
0
0
0
0
0
0
EXTVCO_CP_IUP
EXTVCO_CP_GAIN
290810h
28101Ch
CP_IUP
0
CP_GAIN
0
1
1
1
1
1
0
0
1
0
SDO_LD_
SEL
R39
R35
R/W
R/W
0
0
1
1
0
0
0
0
1
0
1
1
1
1
0
0
0
0
0
0
1
0
0
0
0
1
1
1
LD_EN
2711F0h
230647h
OUTBUF
_AUTO
MUTE
OUTBUF
_TX
OUTBUF
_RX
MULT_WAIT
_TYPE
_TYPE
IPBUF
DIFF_
TERM
FSK_
MODE_
SEL0
FSK_
MODE_
SEL1
FSK_I2S_
FS_POL
FSK_I2S_
CLK_POL
R34
R/W
0
1
0
0
0
1
0
0
1
0
FSK_LEVEL
FSK_DEV_SEL
221000h
R33
R32
R31
R30
R29
R28
R27
R26
R25
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
1
1
1
1
1
1
1
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
FSK_DEV_SPI_FAST
FSK_DEV7_F2
FSK_DEV6_F2
FSK_DEV5_F2
FSK_DEV4_F2
FSK_DEV3_F2
FSK_DEV2_F2
FSK_DEV1_F2
FSK_DEV0_F2
210000h
200000h
1F0000h
1E0000h
1D0000h
1C0000h
1B0000h
1A0000h
190000h
FSK_EN
EXTVCO
_SEL
R24
R23
R/W
R/W
0
0
0
0
1
1
1
0
0
1
0
1
0
1
0
0
0
0
0
0
0
0
_
EXTVCO_CHDIV_F2
OUTBUF_TX_PWR_F2
180010h
1710A4h
F2
_F2
OUTBUF
_TX_EN
_F2
OUTBUF
_RX_EN
_F2
OUTBUF_RX_PWR_F2
0
0
0
LF_R4_F2
R22
R21
R/W
R/W
0
0
0
0
1
1
0
0
1
1
1
0
0
1
LF_R3_F2
CHDIV2_F2
PLL_R_F2
CHDIV1_F2
PFD_DELAY_F2
MULT_F2
168584h
150101h
PLL_R_PRE_F2
PLL_N_
PRE_F2
R20
R/W
0
0
1
0
1
0
0
FRAC_ORDER_F2
PLL_N_F2
140028h
R19
R18
R17
R16
R/W
R/W
R/W
R/W
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
1
1
0
0
1
0
1
0
PLL_DEN_F2[15:0]
130000h
120000h
110000h
100000h
PLL_NUM_F2[15:0]
PLL_DEN_F2[23:16]
PLL_NUM_F2[23:16]
FSK_DEV7_F1
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23
22 21 20 19 18 17 16 15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
POR
REG.
R/W
R/W
R/W
R/W
R/W
R/W
R/W
R/W
ADDRESS[6:0]
DATA[15:0]
R15
R14
R13
R12
R11
R10
R9
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
FSK_DEV6_F1
FSK_DEV5_F1
FSK_DEV4_F1
FSK_DEV3_F1
FSK_DEV2_F1
FSK_DEV1_F1
FSK_DEV0_F1
F0000h
E0000h
D0000h
C0000h
B0000h
A0000h
90000h
FSK_EN
EXTVCO
_SEL
R8
R7
R/W
R/W
0
0
0
0
0
0
1
0
0
1
0
1
0
1
0
0
0
0
0
0
0
0
_
EXTVCO_CHDIV_F1
OUTBUF_TX_PWR_F1
80010h
710A4h
F1
_F1
OUTBUF
_TX_EN
_F1
OUTBUF
_RX_EN
_F1
OUTBUF_RX_PWR_F1
0
0
0
LF_R4_F1
R6
R5
R/W
R/W
0
0
0
0
0
0
0
0
1
1
1
0
0
1
LF_R3_F1
CHDIV2_F1
PLL_R_F1
CHDIV1_F1
PFD_DELAY_F1
MULT_F1
68584h
50101h
PLL_R_PRE_F1
PLL_N_
PRE_F1
R4
R/W
0
0
0
0
1
0
0
FRAC_ORDER_F1
PLL_N_F1
40028h
R3
R2
R1
R/W
R/W
R/W
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
PLL_DEN_F1[15:0]
30000h
20000h
10000h
PLL_NUM_F1[15:0]
PLL_DEN_F1[23:16]
PLL_NUM_F1[23:16]
POWER
0
F1F2_
INIT
F1F2_
MODE
F1F2_
SEL
R0
R/W
0
0
0
0
0
0
0
0
0
RESET
0
0
0
0
0
0
1
FCAL_EN
3h
DOWN
The POR value is the power-on reset value that is assigned when the device is powered up or the RESET bit is asserted. POR is not a default working
mode, all registers are required to program properly in order to make the device works as desired.
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7.6.1 R60 Register (offset = 3Ch) [reset = 4000h]
图7-7. R60 Register
15
1
14
0
13
1
12
0
11
0
10
0
9
8
7
6
5
0
4
0
3
0
2
0
1
0
0
0
0
0
0
0
R/W-4000h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-6. R60 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
R/W
4000h
Program A000h to this field.
7.6.2 R58 Register (offset = 3Ah) [reset = C00h]
图7-8. R58 Register
15
14
13
12
11
10
9
8
7
6
5
0
4
0
3
0
2
0
1
0
0
0
1
0
0
0
1
1
0
0
0
0
R/W-C00h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-7. R58 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
R/W
C00h
Program 8C00h to this field.
7.6.3 R53 Register (offset = 35h) [reset = 2802h]
图7-9. R53 Register
15
14
13
12
11
10
9
8
7
6
5
0
4
0
3
0
2
1
1
1
0
0
0
1
1
1
1
0
0
0
0
0
R/W-2802h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-8. R53 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
R/W
2802h
Program 7806h to this field.
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7.6.4 R47 Register (offset = 2Fh) [reset = 0h]
图7-10. R47 Register
15
0
14
13
12
0
11
0
10
0
9
8
7
6
5
0
4
0
3
0
2
0
1
0
0
0
DITHERING
R/W-0h
0
0
0
0
R/W-0h
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-9. R47 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15
R/W
0h
Program 0h to this field.
14-13
DITHERING
R/W
0h
Set the level of dithering. This feature is used to mitigate spurs
level in certain use case by increasing the level of randomness
in the Delta Sigma modulator, typically done at the expense of
noise at certain offset.
0 = Disabled
1 = Weak
2 = Medium
3 = Strong
12-0
R/W
0h
Program 0h to this field.
7.6.5 R46 Register (offset = 2Eh) [reset = 1Ah]
图7-11. R46 Register
15
14
13
12
11
10
9
8
7
6
5
0
4
1
3
1
2
1
0
0
0
0
0
0
0
0
0
0
0
VCO_
SEL_S
TRT
VCO_SEL
R/W-1Ah
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-10. R46 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-3
R/W
3h
Program 3h to this field.
2
VCO_SEL_STRT
R/W
0h
Enables VCO calibration to start with the VCO core being
selected in VCO_SEL. Please note that programming to this
register is optional. That is, you do not need to program this
register, the default POR value of this register will ensure that
the right VCO core will be picked up automatically.
0 = Disabled
1 = Enabled
1-0
VCO_SEL
R/W
2h
Set the VCO core to start calibration with. Please note that
programming to this register is optional. That is, you do not need
to program this register, the default POR value of this register
will ensure that the right VCO core will be picked up
automatically.
0 = VCOL
1 = VCOM
2 = VCOH
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7.6.6 R42 Register (offset = 2Ah) [reset = 210h]
图7-12. R42 Register
15
0
14
0
13
0
12
0
11
0
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
0
EXTVC
O_CP_
POL
EXTVCO_CP_IDN
R/W-8h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
R/W-0h
R/W-10h
表7-11. R42 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-6
R/W
8h
Program 8h to this field.
5
EXTVCO_CP_POL
R/W
0h
Sets the phase detector polarity for external VCO in PLL mode
operation. Positive means VCO frequency increases directly
proportional to Vtune voltage.
0 = Positive
1 = Negative
4-0
EXTVCO_CP_IDN
R/W
10h
Set the base charge pump current for external VCO in PLL
mode operation. The total base charge pump current is equal to
EXTVCO_CP_IDN + EXTVCO_CP_IUP. EXTVCO_CP_IDN
must be equal to EXTVCO_CP_IUP. Only even number values
are supported.
0 = Tri-state
2 = 312.5 µA
4 = 625 µA
...
30 = 3437.5 µA
7.6.7 R41 Register (offset = 29h) [reset = 810h]
图7-13. R41 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
EXTVCO_CP_IUP
EXTVCO_CP_
GAIN
CP_IDN
R/W-0h
R/W-10h
R/W-0h
R/W-10h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-12. R41 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-12
R/W
0h
Program 0h to this field.
11-7
EXTVCO_CP_IUP
R/W
10h
Set the base charge pump current for external VCO in PLL
mode operation. The total base charge pump current is equal to
EXTVCO_CP_IDN + EXTVCO_CP_IUP. EXTVCO_CP_IDN
must be equal to EXTVCO_CP_IUP. Only even number values
are supported.
0 = Tri-state
2 = 312.5 µA
4 = 625 µA
...
30 = 3437.5 µA
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表7-12. R41 Register Field Descriptions (continued)
BIT
FIELD
EXTVCO_CP_GAIN
TYPE
RESET
DESCRIPTION
6-5
R/W
0h
Set the multiplication factor to the base charge pump current for
external VCO in PLL mode operation. For example, if the gain
here is 2x and if the total base charge pump current
(EXTVCO_CP_IDN + EXTVCO_CP_IUP) is 2.5 mA, then the
final charge pump current applied to the loop filter is 5 mA. The
gain values are not precise. They are provided as a quick way to
boost the total charge pump current for debug purposes or
specific applications.
0 = 1x
1 = 2x
2 = 1.5x
3 = 2.5x
4-0
CP_IDN
R/W
10h
Set the base charge pump current for internal VCO in
synthesizer mode operation. The total base charge pump
current is equal to CP_IDN + CP_IUP. CP_IDN must be equal to
CP_IUP.
0 = Tri-state
1 = 156.25 µA
2 = 312.5 µA
3 = 468.75 µA
...
31 = 3593.75 µA
7.6.8 R40 Register (offset = 28h) [reset = 101Ch]
图7-14. R40 Register
15
14
13
12
11
10
9
8
7
6
5
0
4
1
3
1
2
1
1
0
0
0
0
0
0
CP_IUP
R/W-10h
CP_GAIN
R/W-0h
R/W-0h
R/W-1Ch
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-13. R40 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-13
R/W
0h
Program 0h to this field.
12-8
CP_IUP
R/W
10h
Set the base charge pump current for internal VCO in
synthesizer mode operation. The total base charge pump
current is equal to CP_IDN + CP_IUP. CP_IDN must be equal to
CP_IUP.
0 = Tri-state
1 = 156.25 µA
2 = 312.5 µA
3 = 468.75 µA
...
31 = 3593.75 µA
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表7-13. R40 Register Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
7-6
CP_GAIN
R/W
0h
Set the multiplication factor to the base charge pump current for
internal VCO in synthesizer mode operation. For example, if the
gain here is 2x and if the total base charge pump current
(CP_IDN + CP_IUP) is 2.5 mA, then the final charge pump
current applied to the loop filter is 5 mA. The gain values are not
precise. They are provided as a quick way to boost the total
charge pump current for debug purposes or specific
applications.
0 = 1x
1 = 2x
2 = 1.5x
3 = 2.5x
5-0
R/W
1Ch
Program 1Ch to this field.
7.6.9 R39 Register (offset = 27h) [reset = 11F0h]
图7-15. R39 Register
15
14
13
12
11
10
9
8
7
6
5
1
4
1
3
2
0
1
1
0
0
0
0
1
0
0
0
1
1
1
SDO_L
D_SEL
LD_EN
R/W-11Fh
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
R/W-0h
R/W-0h
R/W-0h
表7-14. R39 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-4
R/W
11Fh
Program 11Fh to this field.
3
SDO_LD_SEL
R/W
0h
Defines the MUXout pin function.
0 = Register readback serial data output
1 = Lock detect output
2-1
0
R/W
R/W
0h
0h
Program 1h to this field.
LD_EN
Enables lock detect function.
0 = Disabled
1 = Enabled
7.6.10 R35 Register (offset = 23h) [reset = 647h]
图7-16. R35 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0
MULT_WAIT
OUTB OUTB OUTB
UF_AU UF_TX UF_RX
TOMU _TYPE _TYPE
TE
R/W-0h
R/W-C8h
R/W-1h R/W-1h R/W-1h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-15. R35 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-14
R/W
0h
Program 0h to this field.
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表7-15. R35 Register Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
13-3
MULT_WAIT
R/W
C8h
A 20-µs settling time is required for MULT, if it is enabled. These
bits set the correct settling time according to the OSCin
frequency. For example, if OSCin frequency is 100 MHz, set
these bits to 2000. No matter if MULT is enabled or not, the
configured MULT settling time forms part of the total frequency
switching time.
0 = Do not use this setting
1 = 1 OSCin clock cycle
...
2047 = 2047 OSCin clock cycles
2
OUTBUF_AUTOMUTE
R/W
1h
If this bit is set, the output buffers will be muted until PLL is
locked. This bit applies to the following events: (a) device
initialization (b) manually change VCO frequency, and (c) F1F2
switching. However, if the PLL is unlocked afterward (for
example, OSCin is removed), the output buffers will not be
muted and will remain active.
0 = Disabled
1 = Enabled
1
0
OUTBUF_TX_TYPE
OUTBUF_RX_TYPE
R/W
R/W
1h
1h
Sets the output buffer type of RFoutTx. If the buffer is open drain
output, a pullup to VccIO is required. See RF Output Buffer Type
for details.
0 = Open drain
1 = Push pull
Sets the output buffer type of RFoutRx. If the buffer is open
drain output, a pullup to VccIO is required. See RF Output Buffer
Type for details.
0 = Open drain
1 = Push pull
7.6.11 R34 Register (offset = 22h) [reset = 1000h]
图7-17. R34 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
IPBUF
DIFF_
TERM
0
0
1
0
0
0
FSK_I2 FSK_I2 FSK_LEVEL
S_FS_ S_CLK
FSK_DEV_SEL
FSK_M FSK_M
ODE_ ODE_
SEL0 SEL1
POL
_POL
R/W-0h R/W-0h
R/W-2h
R/W-0h R/W-0h R/W-0h R/W-0h
R/W-0h
R/W-0h
R/W-0h R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-16. R34 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15
IPBUFDIFF_TERM
R/W
0h
Enables independent 50 Ωinput termination on the OSCin Pin.
0 = Disabled
1 = Enabled
14
13-11
10
R/W
R/W
R/W
R/W
0h
2h
0h
0h
Program 0h to this field.
Program 2h to this field.
Program 0h to this field.
Program 0h to this field.
9
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表7-16. R34 Register Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
8
FSK_I2S_FS_POL
R/W
0h
Sets the polarity of the I2S Frame Sync input in FSK I2S mode.
0 = Active HIGH
1 = Active LOW
7
FSK_I2S_CLK_POL
FSK_LEVEL
R/W
R/W
0h
0h
Sets the polarity of the I2S CLK input in FSK I2S mode.
0 = Rising edge strobe
1 = Falling edge strobe
6-5
Define the desired FSK level in FSK PIN mode and FSK SPI
mode. When this bit is zero, FSK operation in these modes is
disabled even if FSK_EN_Fx = 1.
0 = Disabled
1 = 2FSK
2 = 4FSK
3 = 8FSK
4-2
FSK_DEV_SEL
R/W
R/W
R/W
0h
0h
0h
In FSK SPI mode, these bits select one of the FSK deviations as
defined in registers R25-32 or R9-16.
0 = FSK_DEV0_Fx
1 = FSK_DEV1_Fx
...
7 = FSK_DEV7_Fx
1
FSK_MODE_SEL0
FSK_MODE_SEL1
FSK_MODE_SEL0 and FSK_MODE_SEL1 define the FSK
operation mode. FSK_MODE_SEL[1:0] =
00 = FSK PIN mode
01 = FSK SPI mode
10 = FSK I2S mode
11 = FSK SPI FAST mode
0
Same as above.
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7.6.12 R33 Register (offset = 21h) [reset = 0h]
图7-18. R33 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
FSK_DEV_SPI_FAST
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-17. R33 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
FSK_DEV_SPI_FAST
R/W
0h
Define the desired frequency deviation in FSK SPI FAST mode.
See Direct Digital FSK Modulation for details.
7.6.13 R25 to R32 Register (offset = 19h to 20h) [reset = 0h]
图7-19. R25 to R32 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
FSK_DEV0_F2 to FSK_DEV7_F2
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-18. R25 to R32 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
FSK_DEV0_F2 to FSK_DEV7_F2
R/W
0h
Define the desired frequency deviation in FSK PIN mode and
FSK SPI mode. See Direct Digital FSK Modulation for details.
7.6.14 R24 Register (offset = 18h) [reset = 10h]
图7-20. R24 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
FSK_E
N_F2
EXTVCO_CHDIV_F2
EXTVC
O_SEL
_F2
OUTBUF_TX_PWR_F2
R/W-0h
R/W-0h
R/W-0h
R/W-0h
R/W-10h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-19. R24 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-11
R/W
0h
Program 0h to this field.
10
FSK_EN_F2
R/W
0h
Enables FSK operation in all FSK operation modes. When this
bit is set, fractional denominator DEN should be zero. See Direct
Digital FSK Modulation for details.
0 = Disabled
1 = Enabled
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表7-19. R24 Register Field Descriptions (continued)
BIT
FIELD
TYPE
RESET
DESCRIPTION
9-6
EXTVCO_CHDIV_F2
R/W
0h
Set the value of the output channel divider, CHDIV3, when using
external VCO in PLL mode.
0 = Divide by 1
1 = Reserved
2 = Divide by 2
3 = Divide by 3
...
10 = Divide by 10
11-15 = Reserved
5
EXTVCO_SEL_F2
R/W
R/W
0h
Selects synthesizer mode (internal VCO) or PLL mode (external
VCO) operation.
0 = Synthesizer mode
1 = PLL mode
4-0
OUTBUF_TX_PWR_F2
10h
Set the output power at RFoutTx port. See RF Output Buffer
Power Control for details.
7.6.15 R23 Register (offset = 17h) [reset = 10A4h]
图7-21. R23 Register
15
14
13
12
11
10
9
8
7
6
5
0
4
0
3
0
2
1
0
0
0
0
OUTBUF_RX_PWR_F2
OUTB OUTB
UF_TX UF_RX
_EN_F _EN_F
LF_R4_F2
2
2
R/W-0h
R/W-10h
R/W-1h R/W-0h
R/W-4h
R/W-4h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-20. R23 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-13
R/W
0h
Program 0h to this field.
12-8
OUTBUF_RX_PWR_F2
OUTBUF_TX_EN_F2
R/W
10h
Set the output power at RFoutRx port. See RF Output Buffer
Power Control for details.
7
R/W
1h
Enables RFoutTx port.
0 = Disabled
1 = Enabled
6
OUTBUF_RX_EN_F2
R/W
R/W
0h
4h
Enables RFoutRx port.
0 = Disabled
1 = Enabled
5-3
Program 0h to this field.
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表7-20. R23 Register Field Descriptions (continued)
BIT
FIELD
LF_R4_F2
TYPE
RESET
DESCRIPTION
Set the resistor value for the 4th pole of the internal loop filter.
2-0
R/W
4h
The shunt capacitor of that pole is 100 pF.
0 = Bypass
1 = 3.2 kΩ
2 = 1.6 kΩ
3 = 1.1 kΩ
4 = 800 Ω
5 = 640 Ω
6 = 533 Ω
7 = 457 Ω
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7.6.16 R22 Register (offset = 16h) [reset = 8584h]
图7-22. R22 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
LF_R3_F2
R/W-4h
CHDIV2_F2
R/W-1h
CHDIV1_F2
R/W-1h
PFD_DELAY_F2
R/W-4h
MULT_F2
R/W-4h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-21. R22 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
Set the resistor value for the 3rd pole of the internal loop filter.
15-13
LF_R3_F2
R/W
4h
The shunt capacitor of that pole is 50 pF.
0 = Bypass
1 = 3.2 kΩ
2 = 1.6 kΩ
3 = 1.1 kΩ
4 = 800 Ω
5 = 640 Ω
6 = 533 Ω
7 = 457 Ω
12-10
CHDIV2_F2
R/W
1h
Set the value of the output channel divider, CHDIV2, when using
internal VCO in synthesizer mode.
0 = Divide by 1
1 = Divide by 2
2 = Divide by 4
3 = Divide by 8
4 = Divide by 16
5 = Divide by 32
6 = Divide by 64
9-8
CHDIV1_F2
R/W
1h
Set the value of the output channel divider, CHDIV1, when using
internal VCO in synthesizer mode.
0 = Divide by 4
1 = Divide by 5
2 = Divide by 6
3 = Divide by 7
7-5
4-0
PFD_DELAY_F2
MULT_F2
R/W
R/W
4h
4h
Used to optimize spurs and phase noise. Suggested values are:
Integer mode (NUM = 0): use PFD_DELAY ≤5
Fractional mode with N-divider < 22: use PFD_DELAY ≤4
Fractional mode with N-divider ≥22: use PFD_DELAY ≥3
Set the MULT multiplier value. MULT value must be greater than
Pre-divider value. See MULT Multiplier for details.
0 = Reserved
1 = Bypass
2 = 2x
...
13 = 13x
14-31 = Reserved
7.6.17 R21 Register (offset = 15h) [reset = 101h]
图7-23. R21 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
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图7-23. R21 Register (continued)
PLL_R_F2
R/W-1h
PLL_R_PRE_F2
R/W-1h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-22. R21 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-8
PLL_R_F2
R/W
1h
Set the OSCin buffer Post-divider value.
7-0
PLL_R_PRE_F2
R/W
1h
Set the OSCin buffer Pre-divider value. This value must be
smaller than MULT value.
7.6.18 R20 Register (offset = 14h) [reset = 28h]
图7-24. R20 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_N
_PRE_
F2
FRAC_ORDER_F2
PLL_N_F2
R/W-0h
R/W-0h
R/W-28h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-23. R20 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15
PLL_N_PRE_F2
R/W
0h
Sets the Prescaler value.
0 = Divide by 2
1 = Divide by 4
14-12
FRAC_ORDER_F2
R/W
0h
Select the order of the Delta Sigma modulator.
0 = Integer mode
1 = 1st order
2 = 2nd order
3 = 3rd order
4-7 = 4th order
11-0
PLL_N_F2
R/W
28h
Set the integer portion of the N-divider value. Maximum value is
1023.
7.6.19 R19 Register (offset = 13h) [reset = 0h]
图7-25. R19 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_DEN_F2[15:0]
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-24. R19 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
PLL_DEN_F2[15:0]
R/W
0h
Set the LSB bits of the fractional denominator of the N-divider.
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7.6.20 R18 Register (offset = 12h) [reset = 0h]
图7-26. R18 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_NUM_F2[15:0]
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-25. R18 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
PLL_NUM_F2[15:0]
R/W
0h
Set the LSB bits of the fractional numerator of the N-divider.
7.6.21 R17 Register (offset = 11h) [reset = 0h]
图7-27. R17 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_DEN_F2[23:16]
R/W-0h
PLL_NUM_F2[23:16]
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-26. R17 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-8
PLL_DEN_F2[23:16]
R/W
0h
Set the MSB bits of the fractional denominator of the N-divider.
Set the MSB bits of the fractional numerator of the N-divider.
7-0
PLL_NUM_F2[23:16]
R/W
0h
7.6.22 R9 to R16 Register (offset = 9h to 10h) [reset = 0h]
图7-28. R9 to R16 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
FSK_DEV0_F1 to FSK_DEV7_F1
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-27. R9 to R16 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
FSK_DEV0_F1 to FSK_DEV7_F1
R/W
0h
See 表7-18.
7.6.23 R8 Register (offset = 8h) [reset = 10h]
图7-29. R8 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
FSK_E
N_F1
EXTVCO_CHDIV_F1
EXTVC
O_SEL
_F1
OUTBUF_TX_PWR_F1
R/W-0h
R/W-0h
R/W-0h
R/W-0h
R/W-10h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
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表7-28. R8 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-11
R/W
0h
Program 0h to this field.
See 表7-19.
10
9-6
5
FSK_EN_F1
R/W
R/W
R/W
R/W
0h
EXTVCO_CHDIV_F1
EXTVCO_SEL_F1
OUTBUF_TX_PWR_F1
0h
See 表7-19.
0h
See 表7-19.
4-0
10h
See 表7-19.
7.6.24 R7 Register (offset = 7h) [reset = 10A4h]
图7-30. R7 Register
15
14
13
12
11
10
9
8
7
6
5
0
4
0
3
0
2
1
0
0
0
0
OUTBUF_RX_PWR_F1
OUTB OUTB
UF_TX UF_RX
_EN_F _EN_F
LF_R4_F1
1
1
R/W-0h
R/W-10h
R/W-1h R/W-0h
R/W-4h
R/W-4h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-29. R7 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-13
R/W
0h
Program 0h to this field.
See 表7-20.
12-8
7
OUTBUF_RX_PWR_F1
OUTBUF_TX_EN_F1
OUTBUF_RX_EN_F1
R/W
R/W
R/W
R/W
R/W
10h
1h
0h
4h
4h
See 表7-20.
6
See 表7-20.
5-3
2-0
Program 0h to this field.
See 表7-20.
LF_R4_F1
7.6.25 R6 Register (offset = 6h) [reset = 8584h]
图7-31. R6 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
LF_R3_F1
R/W-4h
CHDIV2_F1
R/W-1h
CHDIV1_F1
R/W-1h
PFD_DELAY_F1
R/W-4h
MULT_F1
R/W-4h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-30. R6 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
See 表7-21.
See 表7-21.
See 表7-21.
See 表7-21.
See 表7-21.
15-13
LF_R3_F1
R/W
4h
12-10
9-8
CHDIV2_F1
CHDIV1_F1
PFD_DELAY_F1
MULT_F1
R/W
R/W
R/W
R/W
1h
1h
4h
4h
7-5
4-0
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7.6.26 R5 Register (offset = 5h) [reset = 101h]
图7-32. R5 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_R_F1
R/W-1h
PLL_R_PRE_F1
R/W-1h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-31. R5 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
See 表7-22.
See 表7-22.
15-8
PLL_R_F1
R/W
1h
7-0
PLL_R_PRE_F1
R/W
1h
7.6.27 R4 Register (offset = 4h) [reset = 28h]
图7-33. R4 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_N
_PRE_
F1
FRAC_ORDER_F1
PLL_N_F1
R/W-0h
R/W-0h
R/W-28h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-32. R4 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
See 表7-23.
See 表7-23.
15
PLL_N_PRE_F1
R/W
0h
14-12
11-0
FRAC_ORDER_F1
PLL_N_F1
R/W
R/W
0h
28h
See 表7-23.
7.6.28 R3 Register (offset = 3h) [reset = 0h]
图7-34. R3 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_DEN_F1[15:0]
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-33. R3 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
PLL_DEN_F1[15:0]
R/W
0h
See 表7-24.
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7.6.29 R2 Register (offset = 2h) [reset = 0h]
图7-35. R2 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_NUM_F1[15:0]
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-34. R2 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-0
PLL_NUM_F1[15:0]
R/W
0h
See 表7-25.
7.6.30 R1 Register (offset = 1h) [reset = 0h]
图7-36. R1 Register
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
PLL_DEN_F1[23:16]
R/W-0h
PLL_NUM_F1[23:16]
R/W-0h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-35. R1 Register Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
See 表7-26.
See 表7-26.
15-8
PLL_DEN_F1[23:16]
R/W
0h
7-0
PLL_NUM_F1[23:16]
R/W
0h
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7.6.31 R0 Register (offset = 0h) [reset = 3h]
图7-37. R0 Register
15
0
14
0
13
12
11
0
10
0
9
8
7
6
5
0
4
0
3
0
2
0
1
1
0
RESET POWE
F1F2_I
NIT
0
F1F2_ F1F2_
MODE SEL
FCAL_
EN
RDOW
N
R/W-0h
R/W-0h R/W-0h R/W-0h R/W-0h R/W-0h R/W-0h R/W-0h R/W-0h
R/W-1h
R/W-1h
LEGEND: R/W = Read/Write; R = Read only; -n = value after reset
表7-36. R0 Register Field Descriptions
BIT
FIELD
TYPE
RESET
DESCRIPTION
15-14
R/W
0h
Program 0h to this field.
13
RESET
R/W
0h
0h
Resets all the registers to the default values. This bit is self-clearing.
0 = Normal operation
1 = Reset
12
POWERDOWN
R/W
Powers down the device. When the device comes out of the powered down state,
either by resuming this bit to zero or by pulling back CE pin HIGH (if it was powered
down by CE pin), it is required that register R0 with FCAL_EN = 1 be programmed
again to re-calibrate the device. A 100-µs wait-time is recommended before
programming R0.
0 = Normal operation
1 = Power down
11
10
9
R/W
R/W
R/W
0h
0h
0h
Program this field to 0h.
Program this field to 0h.
F1F2_INIT
Toggling this bit re-calibrates F1F2 if F1, F2 are modified after calibration. This bit is
not self-clear, so it is required to clear the bit value after use. See Register R0
F1F2_INIT, F1F2_MODE Usage for details.
0 = Clear bit value
1 = Re-calibrate
8
7
R/W
R/W
0h
0h
Program this field to 0h.
F1F2_MODE
Calibrates F1 and F2 during device initialization (initial power on programming).
Even if this bit is not set, F1-F2 switching is still possible but the first switching time
will not be optimized because either F1 or F2 will only be calibrated. If F1-F2
switching is not required, set this bit to zero. See Register R0 F1F2_INIT,
F1F2_MODE Usage for details.
0 = Disable F1F2 calibration
1 = Enable F1F2 calibration
6
F1F2_SEL
FCAL_EN
R/W
0h
Selects F1 or F2 configuration registers.
0 = F1 registers
1 = F2 registers
5-1
0
R/W
R/W
1h
1h
Program 1h to this field.
Activates all kinds of calibrations, suggest keep it enabled all the time. If it is
desired that the R0 register be programmed without activating this calibration, then
this bit can be set to zero.
0 = Disabled
1 = Enabled
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8 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
8.1.1 Direct Digital FSK Modulation
In fractional mode, the finest delta frequency difference between two programmable output frequencies is equal
to:
f1 –f2 = Δfmin = fPD × {[(N + 1) / DEN] –(N / DEN)} = fPD / DEN
(3)
In other words, when the fractional numerator is incremented by 1 (one step), the output frequency will change
by Δfmin. A two steps increment will therefore change the frequency by 2 × Δfmin
.
In FSK operation, the instantaneous carrier frequency is kept changing among some pre-defined frequencies. In
general, the instantaneous carrier frequency is defined as a certain frequency deviation from the nominal carrier
frequency. The frequency deviation could be positive and negative.
Nominal
carrier
frequency
4FSK symbol: 11 10 00 01
Instantaneous
carrier
frequency
Frequency
Negative
swing
Positive
swing
fDEV0
图8-2. Typical 4FSK Definition
fDEV
1
图8-1. General FSK Definition
The following equations define the number of steps required for the desired frequency deviation with respect to
the nominal carrier frequency output at the RFoutTx or RFoutRx port.
表8-1. FSK Step Equations
POLARITY
SYNTHESIZER MODE
PLL MODE
fDEV * DEN CHDIV1 * CHDIV2
*
fDEV * DEN
Round
Round
CHDIV3
*
POSITIVE SWING
fPD
Prescaler
fPD
(4)
(5)
(7)
NEGATIVE SWING
2's complement of Equation 4
(6) 2's complement of Equation 5
In FSK PIN mode and FSK SPI mode, register R25-32 and R9-16 are used to store the desired FSK frequency
deviations in term of the number of step as defined in the above equations. The order of the registers, 0 to 7,
depends on the application system. 图 8-2 shows a typical 4FSK definition. In this case, FSK_DEV0_Fx and
FSK_DEV1_Fx shall be calculated using 方程式4 or 方程式5 while FSK_DEV2_Fx and FSK_DEV3_Fx shall be
calculated using 方程式6 or 方程式7.
For example, if FSK PIN mode is enabled in F1 to support 4FSK modulation, set
FSK_MODE_SEL1 = 0
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FSK_MODE_SEL0 = 0
FSK_LEVEL = 2
FSK_EN_F1 = 1
表8-2. FSK PIN Mode Example
RAW FSK DATA STREAM INPUT
EQUIVALENT SYMBOL INPUT
REGISTER SELECTED
FSK_DEV2_F1
FSK_DEV3_F1
FSK_DEV2_F1
FSK_DEV3_F1
FSK_DEV1_F1
FSK_DEV0_F1
...
RF OUTPUT
10
11
10
11
01
00
...
Freq.
FSK_D0
FSK_D1
FSK_DV
Time
FSK SPI mode assumes the user knows which symbol to send; user can directly write to register R34,
FSK_DEV_SEL to select the desired frequency deviation.
For example, to enable the device to support 4FSK modulation at F1 using FSK SPI mode, set
FSK_MODE_SEL1 = 0
FSK_MODE_SEL0 = 1
FSK_LEVEL = 2
FSK_EN_F1 = 1
表8-3. FSK SPI Mode Example
DESIRED SYMBOL
WRITE REGISTER FSK_DEV_SEL
REGISTER SELECTED
FSK_DEV2_F1
FSK_DEV3_F1
FSK_DEV2_F1
FSK_DEV3_F1
FSK_DEV1_F1
FSK_DEV0_F1
…
10
11
10
11
01
00
...
2
3
2
3
1
0
...
Both the FSK PIN mode and FSK SPI mode support up to 8 levels of FSK. To support an arbitrary-level FSK,
use FSK SPI FAST mode or FSK I2S mode. Constructing pulse-shaping FSK modulation by over-sampling the
FSK modulation waveform is one of the use cases of these modes.
Analog-FM modulation can also be produced in these modes. For example, with a 1-kHz sine wave modulation
signal with peak frequency deviation of ±2 kHz, the signal can be over-sampled, say 10 times. Each sample
point corresponding to a scaled frequency deviation.
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Freq. dev.
+2kHz
t5 t6 t7 t8 t9
Time
t0 t1 t2 t3 t4
-2kHz
图8-3. Over-Sampling Modulation Signal
In FSK SPI FAST mode, write the desired FSK steps directly to register R33, FSK_DEV_SPI_FAST. To enable
this mode, set
FSK_MODE_SEL1 = 1
FSK_MODE_SEL0 = 1
FSK_EN_F1 = 1
表8-4. FSK SPI FAST Mode Example
TIME
FREQUENCY
DEVIATION
CORRESPONDING FSK
STEPS(1)
BINARY EQUIVALENT
WRITE TO
FSK_DEV_SPI_FAST
t0
t1
t2
618.034 Hz
1618.034 Hz
2000 Hz
518
1357
1678
0000 0010 0000 0110
0000 0101 0100 1101
0000 0110 1000 1110
518
1357
1678
…
…
…
…
…
t6
64178
1111 1010 1011 0010
64178
–1618.034 Hz
–2000 Hz
…
t7
63857
1111 1001 0111 0001
63857
…
…
…
…
(1) Synthesizer mode, fVCO = 4800 MHz, fOUT = 480 MHz, fPD = 100 MHz, Prescaler = 2, DEN = 224, Use 方程式4 and 方程式6 to
calculate the step value.
In FSK I2S mode, clock in the desired binary format FSK steps in the FSK_D1 pin.
FSK_D1
FSK_DV
FSK_D0
t0
t1
图8-4. FSK I2S Mode Example
To enable FSK I2S mode, set
FSK_MODE_SEL1 = 1
FSK_MODE_SEL0 = 0
FSK_EN_F1 =1
8.1.2 Frequency and Output Port Switching
The F1F2_SEL bit controls the output switching.
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8.1.3 OSCin Configuration
The OSCin only supports a single-ended clock. The impedance can be programmed as high impedance or 50 Ω.
图8-5. OSCin Configuration
8.1.4 Register R0 F1F2_INIT, F1F2_MODE Usage
These register bits are used to define the calibration behavior. Correct setting is important to ensure that every
F1-F2 switching time is optimized. 图8-6 illustrates the usage of these register bits.
Freq
F2'
F2
FCAL_EN=1
Change F1, F2
F1F2_INIT=1
F1F2_MODE=1
F1F2_INIT=0
F1F2_INIT=0
F1
F1'
Time
t0
t1
t2
t3
t4
t5
t6 t7
t8 t9
t10
t11
图8-6. F1F2_INIT, F1F2_MODE Usage
Before t0: Device initialization
• Power up the device.
• Write all registers to the device.
– Ensure FCAL_EN = 1 to enable calibration.
– Only the output frequency (F1 in this example) will be calibrated, F2 will not be calibrated.
– Set F1F2_INIT = 0. Although the setting of this bit is irrelevant and not important here but if F1F2_INIT =
1, change it back to zero before attempting to change the frequency from F1 to F2.
At t0: Locked to F1
After initialization, both F1 and F2 are calibrated. The calibration data is stored in the internal memory.
At t1: Switch to F2.
Because FCAL_EN = 1, calibration will start over again when the output is switching from F1 to F2. F2
calibration begins based on the last calibration data, which is the calibration data obtained at t0. If the
environment (for example, temperature) does not change much, the new calibration data will be similar to the old
data. As a result, the calibration time is minimal and therefore, the switching time will be short.
At t2: Switch back to F1
Again, F1 calibration starts over and begins with the last calibration data as obtained at t0. Calibration time is
again very short, as is the switching time.
At t3: Switch again to F2
This time, the calibration begins with the calibration data obtained at t1, which is the last calibration data.
At t4: Switch back to F1
Calibration begins with the calibration data obtained at t2, which is the last calibration data.
At t5: Set new F1, F2 frequency
• Write to the relevant registers to set the new F1 and F2 frequency (for example, change the N-divider values)
• Initiate calibration by rewriting register R0
– Set F1F2_INIT=1. Both F1' and F2' will be calibrated
At t6: Locked to F1'
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F1' and F2' calibration completed and their calibration data are ready.
At t7: Release F1F2_INIT bit
This bit has to be reset to zero or otherwise both F1' and F2' will be calibrated every time they are toggling.
At t8: F1' calibration data is updated
Since F1F2_INIT is located in register R0, when writing F1F2_INIT = 0 to the device, calibration is once again
triggered. However, only F1' will be recalibrated, the calibration data of F2' remains unchanged.
At t9: Switch to F2'
F2' calibration begins with the calibration data obtained at t6, which is the last calibration data. Calibration time is
again very short, as is the switching time.
At t10: Switch back to F1'
F1' calibration starts over and begins with the last calibration data as obtained at t8.
At t11: Switch again to F2'
The calibration begins with the calibration data obtained at t9, which is the last calibration data.
As illustrated above, register F1F2_INIT must be used properly in order to ensure that every F1-F2 switching
time is optimized.
8.1.5 FastLock With External VCO
Fastlock may be required in PLL mode where an external VCO with a narrow loop bandwidth is desired. The
LMX2571-EP adopts a new FastLock approach to support the very fast switching time requirement in PLL mode.
There are two control pins in the chip, FLout1 and FLout2. Each pin is used to control a SPST analog switch, S1
and S2. The loop filter value with or without FastLock is the same, except that with FastLock, one more C2 and
two SPST switches are needed.
Ordinary 2nd
order loop filter
With FastLock
control switches
R2
C2
R2
C2a=C2b=C2
S1 S2
C2b
C2a
图8-7. FastLock With SPST Switches
When LMX2571-EP is locked to F1, FLout1 will close the switch S1. When the LMX2571-EP is locked to F2, the
user can program the F1F2_SEL bit in the R0 register to release the switch S1 while the FLout2 closes the S2.
Although S1 is released, the charge stored in C2a remains unchanged. Thus, when the output is switched back
to F1, the Vtune voltage is almost correct, no (or little) charging or discharging to C2a is required which speeds
up the switching time. For example, if Vtune for F1 and F2 are 1 V and 2 V, respectively, without FastLock, when
the switching frequency shifts from F1 to F2, C2 will have to be re-charged from 1 V to 2 V — this is a big
voltage jump. With FastLock, when S2 is closed, Vtune is almost equal to 2 V because C2b maintains the
charge. Only a tiny voltage jump (re-charge) is required to make it reach the final Vtune voltage.
图 8-8 and 图 8-9 compare the frequency switching time using different switching methods. In both cases, the
loop bandwidth is 4 kHz while fPD is 28 MHz. 图 8-8 shows the switching time for a frequency jump from 430
MHz to 480 MHz with SPST switches. Frequency switching is toggled by the F1F2_SEL bit. Switching time is
approximately 1 ms. Frequency switching in 图 8-9 is done in the traditional way. That is, change the output
frequency by writing to the relevant registers such as N-divider values. In this case, because fPD is very much
bigger than the loop bandwidth, cycle slipping jeopardizes the switching time to more than 20 ms.
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图8-8. F1F2 Switching With SPST Switches
图8-9. Change F1 Frequency Through SPI
Programming
8.1.6 OSCin Slew Rate
A phase-lock loop consists of a clean reference clock, a PLL, and a VCO. Each of these contributes to the total
phase noise. The LMX2571-EP is a high-performance PLL with integrated VCO. Both PLL noise and VCO noise
are very good. Typical PLL 1/f noise and noise floor are –124 dBc/Hz and –231 dBc/Hz, respectively. To get
the best possible phase-noise performance from the device the quality of the reference clock is very important
because it may add noise to the loop. First of all, the phase noise of the reference clock must be good so that
the final performance of the system is not degraded. Furthermore, using reference clock with a rather high slew
rate (such as a square wave) is highly preferred. Driving the device input with a lower slew rate clock will
degrade the device phase noise.
For a given frequency, a sine wave clock has the slowest slew rate, especially when the frequency is low. A
CMOS clock or differential clock have much faster slew rates and are recommended. 图 8-10 shows a phase-
noise comparison with different types of reference clocks. Output frequency is 480 MHz while the input clock
frequency is 26 MHz. As one can see, there is a 5-dB difference in phase noise when using a clipped sine wave
TCXO compared to a differential LVPECL clock. Note that the crystal option is not available in the LMX2571-EP,
but is included in the LMX2571 for comparison purposes.
-80
Crystal
TCXO
LVPECL
-90
-100
-110
-120
-130
-140
-150
-160
103
104
105
106
107
Offset /Hz
图8-10. Phase Noise vs. Input Clock
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8.1.7 RF Output Buffer Power Control
Registers OUTBUF_TX_PWR_Fx and OUTBUF_RX_PWR_Fx are used to set the output power at the RFoutTx
and RFoutRx ports. 图 8-11 shows a typical output power vs. power control bit plot in synthesizer mode. VCO
frequency was 4800 MHz, and channel dividers were set to produce the shown output frequencies.
6
60
58
56
54
52
50
48
46
44
fout=1200MHz
fout=480MHz
fout=150MHz
3
Current, fout=480MHz
0
-3
-6
-9
-12
-15
-18
0
3
6
9
12
15
18
21
24
27
30
33
Power control bit
图8-11. Configurable RF Output Power
8.1.8 RF Output Buffer Type
Registers R35, OUTBUF_TX_TYPE, OUTBUF_RX_TYPE are used to configure the RF output buffer type
between open drain and push-pull. Push-pull is easy to use; all that is required is a DC-blocking capacitor at the
output. The output waveform is square wave and therefore, harmonics rich. Open-drain output provides an
option to reduce the harmonics using an LC resonant pullup network at its output. 表 8-5 summarizes an
example an open-drain vs. push-pull application.
表8-5. RF Output Buffer Type
BUFFER TYPE
OPEN-DRAIN
PUSH-PULL
Connection
Diagram
VccIO
39nH
100pF
2.7pF
RFoutTx
RFoutTx
100pF
100pF
Output Power
470 MHz
480 MHz
2.8 dBm
490 MHz
2.8 dBm
470 MHz
–0.1 dBm
–30.4 dBc
–11.9 dBc
–28.5 dBc
–15.6 dBc
–29.5 dBc
480 MHz
0 dBm
490 MHz
0.1 dBm
fo
2.7 dBm
–31 dBc
2fo
3fo
4fo
5fo
6fo
–30.7 dBc
–17.9 dBc
–40.4 dBc
–17.8 dBc
–27.2 dBc
–30.5 dBc
–18.1 dBc
–41.6 dBc
–17.6 dBc
–28.5 dBc
–30.2 dBc
–12.1 dBc
–28.4 dBc
–15.6 dBc
–29.8 dBc
–30 dBc
–12.4 dBc
–28.1 dBc
–15.7 dBc
–29.3 dBc
–17.3 dBc
–39 dBc
–18.1 dBc
–27.6 dBc
Clearly, with a proper LC pull up in open-drain architecture, the 3rd to 5th harmonics could be reduced.
8.1.9 MULT Multiplier
The main purpose of the multiplier, MULT, in the R–divider is to push the in-band fractional spurs far away from
the carrier such that the spurs could be filtered out by the loop filter. In a fractional engine, the fractional spurs
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appear at a multiple of fPD × Nfrac. In cases where both fPD and Nfrac are small, the fractional spurs will appear
very close to the carrier. These kinds of spurs are called in-band spurs.
表8-6. MULT Application Example
USE CASE OSCin /M
Hz
PRE-DIVIDER
MULT
POST-DIVIDER fPD /MHz VCO /MH Ninteger
z
Nfrac
SPURS /
MHz
I
19.2
19.2
19.2
1
1
1
1
1
5
1
1
4
19.2
19.2
24
460.8
461
24
24
19
0
0
0.2
5
II
0.0104167
0.2083333
III
461
In Case I, the VCO frequency is an integer multiple of the fPD, so Nfrac is zero and there are no spurs. However,
in Case II, the spur appears at an offset of 200 kHz. If this spur cannot be reduced by other typical spur-
reduction techniques such as dithering, user can enable the MULT to overcome this problem. If the MULT is
enabled as depicted in Case III, the spurs can be pushed to an offset of 5 MHz. In this case, the MULT together
with the Post-divider changes the phase detector to a little bit higher frequency. As a consequence, the spurs are
pushed further away from the carrier and are reduced more by the loop filter.
Another use case of MULT is to make higher phase-detector frequency. For example, if OSCin is 20 MHz, user
can set MULT to 5 to make fPD go to 100 MHz. As a result, the N-divider value will be reduced by 5 times;
therefore, the PLL phase noise is reduced. A wide loop bandwidth can then be used to reduce the VCO noise.
Consequently, the synthesizer close-in phase noise would be very good.
The MULT multiplier is an active device in nature, whenever it is enabled, it will add noise to the loop. For best
phase noise performance, TI recommends setting the MULT not greater than 6.
To use the MULT, beware of the restriction as indicated in the Electrical Characteristics table and 表7-21.
8.1.10 Integrated VCO
The integrated VCO is composed of 3 VCO cores. The approximate frequency ranges for the three VCO cores
with their gains is as follows:
表8-7. Approximate VCO Ranges and VCO Gain
VCO CORE
TYPICAL FREQUENCY RANGE (MHz)
TYPICAL VCO GAIN (MHz/V)
LOW
4200
4560
4920
HIGH
4700
5100
5520
LOW
46
MID
52
HIGH
61
VCOL
VCOM
VCOH
50
56
65
55
63
73
8.2 Typical Applications
8.2.1 Synthesizer Duplex Mode
In this example, the internal VCO is being used. The PLL will be put in fractional mode to support 4FSK direct
digital modulation using FSK PIN mode. Both frequency (F1, F2) switching as well as RF output port switching is
toggled by the F1F2_SEL bit. MULT multiplier in the R-divider will be used to reduce spurs.
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3.3V
3.3V
3.3V
0.1µF
0.1µF
0.1µF
0.1µF
XO
26MHz
Vcc3p3
OSCin
VccIO
VcpExt
Bypass
100pF
RFoutTx
100pF
RFoutRx
CPout
LMX2571-EP
VrefVCO
VregVCO
2.2µF
680
0.1µF
390pF
4.7nF
图8-12. Typical Synthesizer Duplex Mode Application Schematic
8.2.1.1 Design Requirements
OSCin frequency = 26 MHz, LVCMOS
RFoutTx frequency = 902 MHz
RFoutRx frequency = 928 MHz
Frequency switching time ≤500 µs
4FSK modulation on TX, baud rate = 20 kSPs
Frequency deviation = ±10 kHz and ±30 kHz
FSK error ≤1 %
Spurs ≤–72 dBc
Lock detect is required to indicate lock status
Output power < 1 dBm
8.2.1.2 Detailed Design Procedure
First of all, calculate all the frequencies in each functional block.
OSCin
26MHz
Pre-div
1
MULT
4
Post-div
1
PDF
104MHz
VCO
4510MHz
CHDIV1
5
CHDIV2
1
Output
902MHz
N
21.68269231
Prescaler
2
图8-13. F1 Frequency Plan
Assign F1 frequency to be 902 MHz. With CHDIV1 = 5 and CHDIV2 = 1, the total division is 5. As a result, the
VCO frequency will be 902 × 5 = 4510 MHz, which is within the VCO tuning range.
OSCin is 26 MHz, put Pre-divider = 1 to meet the MULT input frequency range requirement.
To meet the maximum MULT output frequency requirement, possible MULT values are 3 to 5. Play around the
allowable MULT values and Post-divider values to get the optimum phase noise and spurs performance.
Assuming MULT = 4 and Post-divider = 1 returns the best performance, then fPD = 104 MHz.
N-divider = 21.68269231, that means Ninteger = 21 while Nfrac = 0.68269231. To use the direct digital modulation
feature, put fractional denominator, DEN = 0. The actual DEN value is, in fact, equal to 224 = 16777216. So the
fractional numerator, NUM, is equal to Nfrac × DEN = 11453676.
Use 方程式 4 and 方程式 6 to calculate the required FSK steps. For +10-kHz frequency deviation, the FSK step
value is equal to [10000 × 16777216 / (104 × 106)] × (5 × 1 / 2) = 4033. For –10-kHz frequency deviation, the
FSK step value is equal to 2's complement of 4033 = 61502. Similarly, the FSK step values for ±30-kHz
frequency deviation are 12099 and 53436.
All the required configuration values for F2, 928 MHz can be calculated in the similar fashion and are
summarized as follows:
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表8-8. Frequency Plan Summary
CONFIGURATION PARAMETER
F1 (902 MHz)
F2 (928 MHz)
Pre-divider
MULT
1
1
4
4
Post-divider
PDF
1
104 MHz
4510 MHz
21.68269231
21
1
104 MHz
VCO
4640 MHz
N-divider
Ninteger
22.30769231
22
DEN
0
0
NUM
11453676
5
5162220
CHDIV1
CHDIV2
FSK_DEV0
FSK_DEV1
FSK_DEV2
FSK_DEV3
5
1
1
4033
12099
61502
53436
Assume here that the base charge pump current = 1250 µA, CP Gain = 1x and 3rd order Delta Sigma Modulator
without dithering is adopted in both frequency sets. The register settings are summarized as follows:
表8-9. Register Settings Summary
CONFIGURATION
PARAMETERS
REGISTER BIT
COMMON SETTING
F1 SPECIFIC SETTING
F2 SPECIFIC SETTING
VCO calibration
FCAL_EN
1 = Enabled
Lock detect
SDO_LE_SEL
LD_EN
1 = Lock detect output
1 = Enabled
0 = Disabled
1 = 1x
Dithering
DITHERING
Charge pump gain
Base charge pump current
CP_GAIN
CP_IUP
8 = 1250 µA
8 = 1250 µA
520 = 20 µs
1 = Push pull
1 = Push pull
0 = Disabled
1 = Enabled
CP_IDN
MULT settling time
Output buffer type
MULT_WAIT
OUTBUF_RX_TYPE
OUTBUF_TX_TYPE
OUTBUF_AUTOMUTE
F1F2_MODE
PLL_R_PRE_F1
PLL_R_PRE_F2
MULT_F1
Output buffer auto mute
Enable F1 F2 initialization
Pre-divider
1
4
1
1
4
1
MULT multiplier
Post-divider
MULT_F2
PLL_R_F1
PLL_R_F2
FRAC_ORDER_F1
FRAC_ORDER_F2
PFD_DELAY_F1
PFD_DELAY_F2
CHDIV1_F1
3 = 3rd order
ΔΣmodulator order
PFD delay
3 = 3rd order
5 = 8 clock cycles
1 = Divide by 5
0 = Divide by 1
5 = 8 clock cycles
1 = Divide by 5
0 = Divide by 1
CHDIV1 divider
CHDIV2 divider
CHDIV1_F2
CHDIV2_F1
CHDIV2_F2
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表8-9. Register Settings Summary (continued)
CONFIGURATION
PARAMETERS
REGISTER BIT
COMMON SETTING
F1 SPECIFIC SETTING
F2 SPECIFIC SETTING
Internal 3rd pole loop filter
LF_R3_F1
4 = 800 Ω
LF_R3_F2
4 = 800 Ω
Internal 4th pole loop filter
LF_R4_F1
4 = 800 Ω
LF_R4_F2
4 = 800 Ω
Output port selection
Output power control
FSK mode
OUTBUF_TX_EN_F1
OUTBUF_RX_EN_F2
OUTBUF_TX_PWR_F1
OUTBUF_RX_PWR_F2
1 = TX port enabled
6
1 = RX port enabled
6
FSK_MODE_SEL1
FSK_MODE_SEL0
00 = FSK PIN mode
2 = 4FSK
FSK level
FSK_LEVEL
Enable FSK modulation
FSK deviation at 00
FSK deviation at 01
FSK deviation at 10
FSK deviation at 11
Fractional denominator
FSK_EN_F1
1 = Enabled
4033 = +10 kHz
12099 = +30 kHz
61502 = -10 kHz
53436 = -30 kHz
0
FSK_DEV0_F1
FSK_DEV1_F1
FSK_DEV2_F1
FSK_DEV3_F1
PLL_DEN_F1[23:16]
PLL_DEN_F1[15:0]
PLL_DEN_F2[23:16]
PLL_DEN_F2[15:0]
PLL_NUM_F1[23:16]
PLL_NUM_F1[15:0]
PLL_NUM_F2[23:16]
PLL_NUM_F2[15:0]
PLL_N_F1
0
0
0
Fractional numerator
174
50412
78
50412
Ninteger
21
PLL_N_F2
22
Prescaler
PLL_N_PRE_F1
PLL_N_PRE_F2
0 = Divide by 2
0 = Divide by 2
8.2.1.3 Synthesizer Duplex Mode Application Curves
图8-14. F1 (TX) Phase Noise and Spurs
图8-15. F2 (RX) Phase Noise and Spurs
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图8-16. F1 (TX) to F2 (RX) Switching
图8-17. F2 (RX) to F1 (TX) Switching
图8-18. F1 to F2 Switching Time
图8-19. F2 to F1 Switching Time
.
图8-20. 4FSK Modulation
图8-21. 4FSK Modulation Quality
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8.2.2 PLL Duplex Mode
In this example, the internal VCO is bypassed, and the device is used to lock to an external VCO. TI’s dual
SPST analog switch, TS5A21366 is used to facilitate FastLock between two frequencies.
3.3V
3.3V
5V
0.1µF
0.1µF
0.1µF
0.1µF
XO
16.8MHz
Vcc3p3
OSCin
VccIO
VcpExt
Bypass
100pF
RFoutTx
VCO
100pF
430-480MHz
Fin
LMX2571-EP
10
10
CPoutExt
100pF
50
VrefVCO
VregVCO
2.2µF
10
470nF 39nF 39nF
0.1µF
FLout1
FLout2
TS5A21366
4.7µF
4.7µF
图8-22. Typical PLL Duplex Mode Application Schematic
8.2.2.1 Design Requirements
OSCin frequency = 16.8 MHz, LVCMOS
F1 frequency = 430 MHz
F2 frequency = 480 MHz
Frequency switching time ≤1.5 ms within 100-Hz frequency tolerance
8.2.2.2 Detailed Design Procedure
Again, we need to figure out all the frequencies in each functional block first.
OSCin
16.8MHz
Pre-div
1
MULT
5
Post-div
3
PDF
28MHz
VCO
430MHz
CHDIV3
1
Output
430MHz
N
15.35714286
图8-23. Frequency Plan in PLL Duplex Mode
Follow the previous example to determine all the necessary configurations. 表 8-10 is the summary in this
example.
表8-10. PLL Duplex Mode Frequency Plan Summary
CONFIGURATION PARAMETER
F1 (430 MHz)
F2 (480 MHz)
Pre-divider
MULT
1
5
1
5
Post-divider
PDF
3
3
28 MHz
430 MHz
15.35714286
15
28 MHz
480 MHz
17.14285714
17
VCO
N-divider
Ninteger
DEN
1234567
440917
1234567
176367
NUM
To enable external VCO operation, set the following bits:
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表8-11. PLL Duplex Mode Register Settings Summary
CONFIGURATION PARAMETER
REGISTER BITS
SETTING
Charge pump polarity
EXTVCO_CP_POL
0 = Positive
1 = 1x
External VCO charge pump gain
Base charge pump current
EXTVCO_CP_GAIN
EXTVCO_CP_IUP
8 = 1250 µA
8 = 1250 µA
1 = External VCO
EXTVCO_CP_IDN
Select PLL mode operation
CHDIV3 divider
EXTVCO_SEL_F1, EXTVCO_SEL_F2
EXTVCO_CHDIV_F1, EXTVCO_CHDIV_F2 0 = Bypass
Make sure that register R0, FCAL_EN is set so that FastLock is enabled.
The loop bandwidth had been design to be around 4 kHz, while phase margin is about 40 degrees.
8.2.2.3 PLL Duplex Mode Application Curves
图8-24. F1 to F2 Switching
图8-25. F2 to F1 Switching
图8-26. F1 to F2 Switching Time
图8-27. F2 to F1 Switching Time
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8.2.3 Synthesizer/PLL Duplex Mode
This example will demonstrate the device's capability in switching two frequencies using internal and external
VCO. VCO switching is toggled by F1F2_SEL bit. Direct digital FSK modulation is enabled in TX using FSK I2S
mode.
3.3V
3.3V
5V
0.1µF
0.1µF
0.1µF
0.1µF
XO
19.2MHz
Vcc3p3
OSCin
VccIO
VcpExt
Bypass
100pF
RFoutRx
100pF
100pF
RFoutTx
VCO
430-480MHz
LMX2571-EP
Fin
VrefVCO
VregVCO
10
10
100pF
50
2.2µF
CPoutExt
0.1µF
10
470nF 39nF 39nF
4.7µF
图8-28. Typical Synthesizer/PLL Duplex Mode Application Schematic
8.2.3.1 Design Requirements
OSCin frequency = 19.2 MHz, LVCMOS
RFoutRX frequency = 440 MHz, external VCO = F1
RFoutTx frequency = 540 MHz, internal VCO = F2
Frequency switching time ≤1.5 ms within 100-Hz frequency tolerance
Arbitrary FSK modulation to simulate analog FM modulation (10 times and 20 times over-sampling rate)
FM modulation frequency = 1 kHz
Frequency deviation = ±2000 Hz
Spurs ≤–72 dBc
8.2.3.2 Detailed Design Procedure
Frequency plans in TX and RX paths are as follows:
OSCin
19.2MHz
Pre-div
1
MULT
1
Post-div
1
PDF
19.2MHz
VCO
440MHz
CHDIV3
1
Output
440MHz
N
22.91666687
OSCin
19.2MHz
Pre-div
1
MULT
5
Post-div
1
PDF
96MHz
VCO
5400MHz
CHDIV1
5
CHDIV2
2
Output
540MHz
N
28.125
Prescaler
2
图8-29. TX and RX Frequency Plans
Follow the previous examples to determine all the necessary configurations. To enable FSK I2S mode, set
FSK_MODE_SEL1=1
FSK_MODE_SEL=0
FSK_EN_F2=1
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8.2.3.3 Synthesizer/PLL Duplex Mode Application Curves
图8-30. External VCO to Internal VCO Switching
图8-31. Internal VCO to External VCO Switching
图8-32. External VCO to Internal VCO Switching
图8-33. Internal VCO to External VCO Switching
Time
Time
图8-34. Simulated FM Modulation (10 Times Over- 图8-35. Simulated FM Modulation (20 Times Over-
Sampling)
Sampling)
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8.3 Do's and Don'ts
INCORRECT
CORRECT
VregVCO
VregVCO
100nF
2.2µF
VregVCO DECOUPLING
VcpExt SUPPLY
DAP PIN
3.3V or 5V: Synthesizer mode
5V: PLL mode
VcpExt
DAP
VcpExt
DAP
图8-36. Do's and Don'ts
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9 Power Supply Recommendations
TI recommends placing a 100-nF capacitor close to each of the power supply pins. If fractional spurs are a large
concern, using a ferrite bead to each of these power supply pins may reduce spurs to a small degree.
VcpExt is the power supply pin for the 5-V charge pump. In PLL mode, the 5-V charge pump is active and a 5 V
is required at VcpExt pin. In synthesizer mode, although the 5-V charge pump is not active, either a 3.3-V
or 5-V supply is still needed at this pin.
Because LMX2571-EP has integrated LDOs, the requirement to external power supply is relaxed. In addition to
LDO, LMX2571-EP is able to operate with DC-DC converter. The switching noise from the DC-DC converter
would not affect performance of the LMX2571-EP. 表9-1 lists some of the suggested DC-DC converters.
表9-1. Recommended DC-DC Converters
PART NUMBER
TPS560200
TPS62050
TOPOLOGY
Buck
VIN
VOUT
IOUT
SWITCHING FREQUENCY
600 kHz
4.5 V to 17 V
2.7 V to 10 V
3 V to 17 V
4.5 V to 17 V
2.5 V to 5.5 V
0.8 V to 6.5 V
0.7 V to 6 V
0.9 V to 6 V
0.76 V to 7 V
2.5 V to 5.5 V
500 mA
Buck
800 mA
1 MHz
TPS62160
Buck
1000 mA
2000 mA
500 mA to 1 A
2.25 MHz
TPS562200
TPS63050
Buck
650 kHz
Buck Boost
2.5 MHz
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10 Layout
10.1 Layout Guidelines
See EVM instructions (SNAU182) for details. In general, the layout guidelines are similar to most other PLL
devices. The followings are some guidelines specific to the device.
• It may be beneficial to separate main ground and OSCin ground, crosstalk spurs might be reduced.
• Don't route any traces that carry switching signal close to the charge pump traces and external VCO.
• When using FSK I2S mode on this device, take care to avoid coupling between the I2S clock and any of the
PLL circuit.
10.2 Layout Example
图10-1. Layout Example
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
Texas Instruments has three main tools to assist with this product. The Clock Tree Architect assists as a solution
finder, the PLLatinum Sim tool is used to design and simulate the loop filter (including filter design, bode plot,
phase noise, spurs, and lock time), and the TICS Pro software is used to program the device. All these tools are
available at www.ti.com.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, TS5A21366 0.75-ΩDual SPST Analog Switch With 1.8-V Compatible Input Logic data
sheet
• Texas Instruments, TPS560200 4.5-V to 17-V Input, 500-mA Synchronous Step-Down SWIFT™ Converter
data sheet
• Texas Instruments, TPS62050 800-mA Synchronous Step-Down Converter data sheet
• Texas Instruments, TPS62160 3-V to 17-V, 1-A Step-Down Converters With DCS-Control data sheet
• Texas Instruments, TPS562200 4.5-V to 17-V Input, 2-A Synchronous Step-Down Voltage Regulator in
SOT-23 data sheet
• Texas Instruments, TPS63050 Tiny Single Inductor Buck Boost Converter data sheet
11.3 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
11.4 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
11.5 Trademarks
PLLatinum™ is a trademark of Texas Instruments.
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.7 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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26-Mar-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
250
250
(1)
(2)
(3)
(4/5)
(6)
LMX2571SRHHTEP
V62/21613-01XE
ACTIVE
VQFN
VQFN
RHH
36
36
RoHS & Green
RoHS & Green
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
-55 to 125
LMX2571
Samples
Samples
EP
ACTIVE
RHH
NIPDAU
LMX2571
EP
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
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26-Mar-2023
OTHER QUALIFIED VERSIONS OF LMX2571-EP :
Catalog : LMX2571
•
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
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TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LMX2571SRHHTEP
VQFN
RHH
36
250
180.0
16.4
6.3
6.3
1.1
12.0
16.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
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TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
VQFN RHH 36
SPQ
Length (mm) Width (mm) Height (mm)
210.0 185.0 35.0
LMX2571SRHHTEP
250
Pack Materials-Page 2
GENERIC PACKAGE VIEW
RHH 36
6 x 6, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225440/A
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PACKAGE OUTLINE
VQFN - 1 mm max height
RHH0036G
PLASTIC QUAD FLATPACK-NO LEAD
6.1
5.9
A
B
PIN 1 INDEX AREA
6.1
5.9
C
1.0
0.8
SEATING PLANE
0.08 C
0.05
0.00
4.7
4.5
SQ
2X 4
(0.1) TYP
10
18
32X 0.5
9
19
37
SYMM
2X
4
27
1
0.34
0.14
0.1
0.05
36X
PIN 1 ID
(OPTIONAL)
C A B
36
28
SYMM
C
0.5
0.3
36X
4226455/A 12/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
VQFN - 1 mm max height
RHH0036G
PLASTIC QUAD FLATPACK-NO LEAD
(5.8)
(SQ 4.6)
28
36
36X (0.6)
36X (0.24)
1
27
32X (0.5)
SYMM
37
(5.8)
(1.16)
(0.89)
9
19
(R0.05) TYP
18
10
(Ø 0.2)VIA
TYP
(1.16)
(0.89)
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 14X
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
OPENING
SOLDERMASK
OPENING
EXPOSED METAL
EXPOSED METAL
NON- SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4226455/A 12/2020
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271)
.
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
VQFN - 1 mm max height
RHH0036G
PLASTIC QUAD FLATPACK-NO LEAD
(5.8)
16X (SQ 0.96)
28
36
36X (0.6)
36X (0.24)
1
27
32X (0.5)
37
(0.58)
(5.8)
SYMM
(1.16)
19
9
(R0.05) TYP
METAL TYP
18
10
(0.58)
SYMM
(1.16)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD
70% PRINTED COVERAGE BY AREA
SCALE: 14X
4226455/A 12/2020
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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