LPV801 [TI]

单路、5.5V、8kHz、超低静态电流 (450nA)、1.6V 最小电源电压、RRO 运算放大器;


型号：	LPV801
厂家：	TEXAS INSTRUMENTS
描述：	单路、5.5V、8kHz、超低静态电流 (450nA)、1.6V 最小电源电压、RRO 运算放大器放大器运算放大器
文件：	总28页 (文件大小：1204K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

LPV801/LPV802 320nA 毫微功耗运算放大器

1 特性

3 说明

•

毫微功耗电源电流：320nA/通道

LPV801（单通道）和 LPV802（双通道）组成了超低

功耗运算放大器系列，适用于由电池供电的无线和低功

耗有线设备中的感测应用。LPV80x 放大器的带宽为

8kHz，静态电流为 320nA，可最大限度降低运行电池

寿命至关重要的设备（如 CO 检测器、烟雾检测器和

PIR 运动检测器）消耗的功率。

偏移电压：3.5mV（最大值）

TcVos：1µV/°C

单位增益带宽：8kHz

宽电源电压范围：1.6V 至 5.5V

低输入偏置电流：0.1pA

单位增益稳定

除超低功耗特性外，LPV80x 放大器还具有实现毫微微

安偏置电流的 CMOS 输入级。LPV80x 放大器还特有

一个负轨感测输入级和一个相对于电源轨的摆幅为毫伏

级的轨到轨输出级，从而尽可能保持最宽的动态范围。

LPV80x 设有电磁干扰 (EMI) 保护，可降低来自手机、

WiFi、无线电发射器和标签阅读器的无用射频信号对系

统造成的影响。

轨到轨输出

无输出反转

EMI 保护

温度范围：–40℃ 至 125℃

行业标准封装：

–

5 引脚小外形尺寸晶体管 (SOT)-23 封装（单通

道版本）

LPV8xx 系列毫微功耗放大器

电源

–

8 引脚超薄小外形尺寸 (VSSOP) 封装（双通道

版本）

电流

（典型值/通

道）

偏移电压

（最大值）

器件编号

通道

2 应用

•

气体检测器（CO 和 O₂传感器）

LPV801

LPV802

LPV811

LPV812

500nA

320nA

450nA

405nA

3.5mV

300µV

PIR 运动检测器

离子化烟雾报警器

温度调节装置

物联网 (IoT) 远程传感器

有效的射频识别 (RFID) 阅读器和标签

便携式医疗设备

器件信息⁽¹⁾

器件型号

封装

封装尺寸

LPV801

LPV802

SOT-23 (5)

VSSOP (8)

2.90mm x 1.60mm

3.00mm × 3.00mm

(1) 如需了解所有可用封装，请见数据表末尾的可订购产品附录。

电化学传感器中的毫微功耗放大器

PIR 运动检测器中的毫微功耗放大器

V_REF

LPV802a

Output to

Comparator

LPV802a

V_REF

C_F

R_F

LPV802b

R_Load

V_OUT

V_REF

LPV802b

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

English Data Sheet: SNOSCZ3

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Recommended Operating Conditions....................... 4

6.4 Thermal Information.................................................. 4

6.5 Electrical Characteristics........................................... 5

6.6 Typical Characteristics.............................................. 6

Detailed Description ............................................ 12

7.1 Overview ................................................................. 12

7.2 Functional Block Diagram ....................................... 12

7.3 Feature Description................................................. 12

7.4 Device Functional Modes........................................ 12

Application and Implementation ........................ 14

8.1 Application Information............................................ 14

8.2 Typical Application: Three Terminal CO Gas Sensor

Amplifier ................................................................... 14

8.3 Do's and Don'ts ...................................................... 17

Power Supply Recommendations...................... 17

10 Layout................................................................... 17

10.1 Layout Guidelines ................................................. 17

10.2 Layout Example .................................................... 17

11 器件和文档支持 ..................................................... 18

11.1 器件支持 ............................................................... 18

11.2 接收文档更新通知 ................................................. 18

11.3 社区资源................................................................ 18

11.4 相关链接................................................................ 18

11.5 商标....................................................................... 18

11.6 静电放电警告......................................................... 18

11.7 Glossary................................................................ 18

12 机械、封装和可订购信息....................................... 18

4 修订历史记录

Changes from Original (August 2016) to Revision A

Page

•

已更改 “产品预览”至“量产数据”............................................................................................................................................... 1

LPV801, LPV802

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ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

5 Pin Configuration and Functions

LPV802 8-Pin VSSOP

DGK Package

Top View

LPV801 5-Pin SOT-23

DBV Package

Top View

OUT A

-IN A

+IN A

V-

V+

OUT

V-

V+

OUT B

-IN B

+IN B

+IN

-IN

Pin Functions: LPV801 DBV

I/O

DESCRIPTION

NAME

OUT

-IN

NUMBER

Output

Inverting Input

+IN

V-

Non-Inverting Input

Negative (lowest) power supply

Positive (highest) power supply

V+

Pin Functions: LPV802 DGK

I/O

DESCRIPTION

NAME

OUT A

-IN A

+IN A

V-

NUMBER

Channel A Output

Channel A Inverting Input

Channel A Non-Inverting Input

Negative (lowest) power supply

Channel B Non-Inverting Input

Channel B Inverting Input

Channel B Output

+IN B

-IN B

OUT B

V+

Positive (highest) power supply

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

(1)

MIN

–0.3

MAX

UNIT

Supply voltage, V_s= (V+) - (V-)

(2) (3)

Voltage

Common mode

Differential

(V-) - 0.3

-10

(V+) + 0.3

Input pins

Current

Output short

current

Continuous Continuous

(4)

Operating temperature

Storage temperature, T_stg

Junction temperature

–40

–65

125

150

°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Not to exceed -0.3V or +6.0V on ANY pin, referred to V-

(3) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should

be current-limited to 10 mA or less.

(4) Short-circuit to Vs/2, one amplifer per package. Continuous short circuit operation at elevated ambient temperature can result in

exceeding the maximum allowed junction temperature of 150°C.

6.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

±1000

V_(ESD)

Electrostatic discharge

Charged-device model (CDM), per JEDEC specification JESD22-

C101⁽²⁾

±250

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions. Pins listed as ±750 V may actually have higher performance.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

1.6

NOM

MAX

5.5

UNIT

Supply voltage (V+ – V–)

Specified temperature

-40

125

°C

6.4 Thermal Information

LPV801

DBV

LPV802

DGK

THERMAL METRIC⁽¹⁾

UNIT

5 PINS

8 PINS

θ_JA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

177.4

133.9

36.3

184.2

75.3

θ_JCtop

θ_JB

Junction-to-board thermal resistance

105.5

13.5

ºC/W

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

23.6

ψ_JB

35.7

103.9

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

LPV801, LPV802

www.ti.com.cn

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

6.5 Electrical Characteristics

T_A= 25°C, V_S= 1.8V to 5 V, V_CM= V_OUT= V_S/2, and R_L≥ 10 MΩ to V_S/ 2, unless otherwise noted.⁽¹⁾

PARAMETER

OFFSET VOLTAGE

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V_S= 1.8V, 3.3V, and 5V,

V_CM= V-

0.55

±3.5

V_OS

Input offset voltage

V_S= 1.8V, 3.3V, and 5V,

V_CM= (V+) – 0.9 V

0.55

ΔV_OS/ΔT Input offset drift

PSRR Power-supply rejection

ratio

INPUT VOLTAGE RANGE

V_CM= V-

T_A= –40°C to 125°C

µV/°C

µV/V

V_S= 1.8V to 5V,

V_CM= V-

1.6

V_CM

Common-mode voltage

range

V_S= 5 V

4.1

Common-mode rejection

ratio

CMRR

(V–) ≤ V_CM≤ (V+) – 0.9 V, V_S= 5V

INPUT BIAS CURRENT

I_B

Input bias current

Input offset current

V_S= 1.8V

±100

I_OS

INPUT IMPEDANCE

Differential

Common mode

NOISE

E_n

Input voltage noise

ƒ = 0.1 Hz to 10 Hz

ƒ = 100 Hz

6.5

340

420

µVp-p

e_n

Input voltage noise

density

nV/√Hz

ƒ = 1 kHz

OPEN-LOOP GAIN

A_OL

Open-loop voltage gain

(V–) + 0.3 V ≤ V_O≤ (V+) – 0.3 V, R_L= 100 kΩ

V_S= 1.8V, R_L= 100 kΩ to V⁺/2

120

3.5

OUTPUT

V_OH

Voltage output swing

from positive rail

V_OL

Voltage output swing

from negative rail

V_S= 1.8V, R_L= 100 kΩ to V⁺/2

V_S= 3.3V, Short to V_S/2

ƒ = 1 KHz, I_O= 0 A

2.5

4.7

I_SC

Z_O

Short-circuit current

Open loop output

impedance

kΩ

FREQUENCY RESPONSE

GBP

Gain-bandwidth product

C_L= 20 pF, R_L= 10 MΩ, V_S= 5V

kHz

G = 1, Rising Edge, C_L= 20 pF, V_S= 5V

G = 1, Falling Edge, C_L= 20 pF, V_S= 5V

Slew rate (10% to 90%)

V/ms

2.1

POWER SUPPLY

I_Q-LPV801Quiescent Current

V_CM= V-, I_O= 0, V_S= 3.3 V

500

320

550

415

Quiescent Current,

I_Q-LPV802

Per Channel

(1) LPV801 Specifications are Preliminary until released.

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

6.6 Typical Characteristics

at T_A= 25°C, R_L= 10MΩ to V_S/2 ,C_L= 20pF, V_CM= V_S/ 2V unless otherwise specified.

1000

900

800

700

600

500

400

300

200

100

1000

900

800

700

600

500

400

300

200

100

+125°C

+25°C

+125°C

+25°C

-40°C

1.5

2.5

3.5

4.5

5.5

1.5

2.5

3.5

4.5

5.5

Supply Voltage (V)

C001

V_CM= V-

LPV801

R_L=No Load

V_CM= V-

LPV802

R_L=No Load

Figure 1. Supply Current vs. Supply Voltage, LPV801

Figure 2. Supply Current vs. Supply Voltage, LPV802

500

+125°C

+25°C

-40°C

+125°C

+25°C

-40°C

400

300

400

300

200

100

œ100

œ200

œ300

œ400

œ500

œ100

œ200

œ300

œ400

œ500

0.15

0.3

0.45

0.6

0.75

0.9

0.4

0.8

1.2

1.6

2.4

Common Mode Voltage (V)

C003

V_S= 1.8V

R_L= 10MΩ

V_S= 3.3V

R_L= 10MΩ

Figure 3. Typical Offset Voltage vs. Common Mode Voltage

Figure 4. Typical Offset Voltage vs. Common Mode Voltage

500

+125°C

400

+25°C

300

-40°C

200

100

œ100

œ200

œ300

œ400

œ500

100m

10m

0.5

1.5

2.5

3.5

4.5

100

125

œ50

œ25

Common Mode Voltage (V)

Temperature (°C)

C003

C001

V_S= 5V

R_L= 10MΩ

V_S= 5V

T_A= -40 to 125

V_CM= Vs/2

Figure 5. Typical Offset Voltage vs. Common Mode Voltage

Figure 6. Input Bias Current vs. Temperature

LPV801, LPV802

www.ti.com.cn

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

Typical Characteristics (continued)

at T_A= 25°C, R_L= 10MΩ to V_S/2 ,C_L= 20pF, V_CM= V_S/ 2V unless otherwise specified.

100

œ20

œ40

œ60

œ80

œ100

œ20

œ40

œ60

œ80

œ100

0.0

0.2

0.3

0.5

0.6

0.8

0.9

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Common Mode Voltage (V)

C001

C002

V_S= 1.8V

T_A= -40°C

V_S= 5V

T_A= -40°C

Figure 7. Input Bias Current vs. Common Mode Voltage

Figure 8. Input Bias Current vs. Common Mode Voltage

1000

800

1000

800

600

400

200

œ200

œ400

œ600

œ800

œ1000

œ200

œ400

œ600

œ800

œ1000

0.0

0.2

0.3

0.5

0.6

0.8

0.9

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Common Mode Voltage (V)

C004

C005

V_S= 1.8V

T_A= 25°C

V_S= 5V

T_A= 25°C

Figure 9. Input Bias Current vs. Common Mode Voltage

Figure 10. Input Bias Current vs. Common Mode Voltage

500

400

500

400

300

200

100

œ100

œ200

œ300

œ400

œ500

œ100

œ200

œ300

œ400

œ500

0.0

0.2

0.3

0.5

0.6

0.8

0.9

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Common Mode Voltage (V)

C003

C006

V_S= 1.8V

T_A= 125°C

V_S= 5V

T_A= 125°C

Figure 11. Input Bias Current vs. Common Mode Voltage

Figure 12. Input Bias Current vs. Common Mode Voltage

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

Typical Characteristics (continued)

at T_A= 25°C, R_L= 10MΩ to V_S/2 ,C_L= 20pF, V_CM= V_S/ 2V unless otherwise specified.

+125°C

+25°C

-40°C

+125°C

+25°C

-40°C

100m

10m

100m

10m

100ꢀ

1ꢀ

10ꢀ

100ꢀ

10m

1ꢀ

10ꢀ

100ꢀ

10m

Output Sourcing Current (A)

Output Sinking Current (A)

C003

C006

V_S= 5V

R_L= No Load

V_S= 1.8V

R_L= No Load

Figure 13. Output Swing vs. Sourcing Current, 1.8V

Figure 14. Output Swing vs. Sinking Current, 1.8V

+125°C

+25°C

-40°C

+125°C

+25°C

-40°C

100m

10m

100m

10m

100ꢀ

1ꢀ

10ꢀ

100ꢀ

10m

1ꢀ

10ꢀ

100ꢀ

10m

Output Sourcing Current (A)

Output Sinking Current (A)

C001

C005

V_S= 3.3V

R_L= No Load

V_S= 3.3V

R_L= No Load

Figure 15. Output Swing vs. Sourcing Current, 3.3V

Figure 16. Output Swing vs. Sinking Current, 3.3V

+125°C

+25°C

-40°C

+125°C

+25°C

-40°C

100m

10m

100m

10m

100ꢀ

1ꢀ

10ꢀ

100ꢀ

10m

1ꢀ

10ꢀ

100ꢀ

10m

Output Sourcing Current (A)

Output Sinking Current (A)

C002

C004

V_S= 5V

R_L= No Load

V_S= 5V

R_L= No Load

Figure 17. Output Swing vs. Sourcing Current, 5V

Figure 18. Output Swing vs. Sinking Current, 5V

LPV801, LPV802

www.ti.com.cn

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

Typical Characteristics (continued)

at T_A= 25°C, R_L= 10MΩ to V_S/2 ,C_L= 20pF, V_CM= V_S/ 2V unless otherwise specified.

500 us/div

C002

T_A= 25

R_L= 10MΩ

Vout = 200mVpp

A_V= +1

T_A= 25

R_L= 10MΩ

Vout = 200mVpp

V_S= ±0.9V

C_L= 20pF

V_S= ±2.5V

C_L= 20pF

A_V= +1

Figure 19. Small Signal Pulse Response, 1.8V

Figure 20. Small Signal Pulse Response, 5V

500 us/div

C002

T_A= 25

R_L= 10MΩ

Vout = 1Vpp

A_V= +1

T_A= 25

R_L= 10MΩ

Vout = 2Vpp

A_V= +1

V_S= ±0.9V

C_L= 20pF

V_S= ±2.5V

C_L= 20pF

Figure 21. Large Signal Pulse Response, 1.8V

Figure 22. Large Signal Pulse Response, 5V

110

100

140

120

100

+PSRR

-PSRR

100

10k

100

10k

Frequency (Hz)

R_L= 10MΩ

C_L= 20p

Frequency (Hz)

R_L= 10MΩ

C_L= 20p

C001

T_A= 25

V_S= 3.3V

V_CM= Vs/2

ΔV_S= 0.5Vpp

T_A= 25

V_S= 5V

ΔV_CM= 0.5Vpp

A_V= +1

V_CM= Vs/2

A_V= +1

Figure 24. ±PSRR vs Frequency

Figure 23. CMRR vs Frequency

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

Typical Characteristics (continued)

at T_A= 25°C, R_L= 10MΩ to V_S/2 ,C_L= 20pF, V_CM= V_S/ 2V unless otherwise specified.

160

140

120

100

180

158

135

113

160

140

120

100

180

125°C

25°C

-40°C

125°C

25°C

-40°C

158

135

113

GAIN

PHASE

œ20

-23

œ20

-23

10m 100m

100

10k 100k

10m 100m

100

10k 100k

Frequency (Hz)

C001

C002

T_A= -40, 25, 125°C

V_S= 5V

R_L= 10MΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

T_A= -40, 25, 125°C

V_S= 3.3V

R_L= 10MΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

Figure 25. Open Loop Gain and Phase, 5V, 10 MΩ Load

Figure 26. Open Loop Gain and Phase, 3.3V, 10 MΩ Load

160

180

158

135

113

160

180

158

135

113

125°C

25°C

-40°C

125°C

25°C

-40°C

140

120

100

140

120

100

GAIN

PHASE

œ20

-23

œ20

-23

10m 100m

100

10k 100k

10m 100m

100

10k 100k

Frequency (Hz)

C003

C002

T_A= -40, 25, 125°C

V_S= 5V

R_L= 1MΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

T_A= -40, 25, 125°C

V_S= 3.3V

R_L= 1MΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

Figure 27. Open Loop Gain and Phase, 5V, 1 MΩ Load

Figure 28. Open Loop Gain and Phase, 3.3V, 1 MΩ Load

160

180

158

135

113

160

180

158

135

113

125°C

25°C

-40°C

125°C

25°C

-40°C

140

120

100

140

120

100

GAIN

PHASE

œ20

-23

œ20

-23

10m 100m

100

10k 100k

10m 100m

100

10k 100k

Frequency (Hz)

C001

C002

T_A= -40, 25, 125°C

V_S= 5V

R_L= 100kΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

T_A= -40, 25, 125°C

V_S= 3.3V

R_L= 100kΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

Figure 29. Open Loop Gain and Phase, 5V, 100kΩ Load

Figure 30. Open Loop Gain and Phase, 3.3V, 100kΩ Load

LPV801, LPV802

www.ti.com.cn

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

Typical Characteristics (continued)

at T_A= 25°C, R_L= 10MΩ to V_S/2 ,C_L= 20pF, V_CM= V_S/ 2V unless otherwise specified.

100k

10k

160

140

120

100

180

158

135

113

125°C

25°C

-40°C

GAIN

PHASE

œ20

-23

100

10m 100m

100

10k 100k

100m

100

10k

100k

Frequency (Hz)

C003

Frequency (Hz)

V_S= 5 V

C001

T_A= -40, 25, 125°C

V_S= 1.8V

R_L= 10MΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

T_A= 25°C

R_L= 10MΩ

Figure 32. Open Loop Output Impedance

Figure 31. Open Loop Gain and Phase, 1.8V, 10 MΩ Load

160

180

158

135

113

10000

1000

100

125°C

25°C

-40°C

140

120

100

GAIN

PHASE

œ20

-23

10m 100m

100

10k 100k

100m

100

10k

Frequency (Hz)

C003

Frequency (Hz)

R_L= 1MΩ

C001

T_A= -40, 25, 125°C

V_S= 1.8V

R_L= 1MΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

T_A= 25

V_S= 5V

V_CM= Vs/2

C_L= 20pF

A_V= +1

Figure 33. Open Loop Gain and Phase, 1.8V, 1 MΩ Load

Figure 34. Input Voltage Noise vs Frequency

120

100

160

180

158

135

113

LPV802, -20dBm

LPV802, -10dBm

LPV802, 0dBm

125°C

25°C

-40°C

140

120

100

GAIN

PHASE

œ20

-23

10k 100k

10m 100m

100

1000

Frequency (Hz)

C003

Frequency (MHz)

R_L= 1MΩ

C001

T_A= -40, 25, 125°C

V_S= 1.8V

R_L= 100kΩ

C_L= 20pF

V_OUT= 200mV_PP

V_CM= Vs/2

T_A= 25

V_CM= Vs/2

V_S= 3.3V

C_L= 20pF

A_V= +1

Figure 35. Open Loop Gain and Phase, 1.8V, 100kΩ Load

Figure 36. EMIRR Performance

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

7 Detailed Description

7.1 Overview

The LPV801 (single) and LPV802 (dual) series nanoPower CMOS operational amplifiers are designed for long-

life battery-powered and energy harvested applications. They operate on a single supply with operation as low as

1.6V. The output is rail-to-rail and swings to within 3.5mV of the supplies with a 100kΩ load. The common-mode

range extends to the negative supply making it ideal for single-supply applications. EMI protection has been

employed internally to reduce the effects of EMI.

Parameters that vary significantly with operating voltages or temperature are shown in the Typical Characteristics

curves.

7.2 Functional Block Diagram

7.3 Feature Description

The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifer

amplifies only the difference in voltage between the two inputs, which is called the differential input voltage. The

output voltage of the op-amp V_OUTis given by Equation 1:

V_OUT= A_OL(IN⁺– IN^–)

where

•

A_OLis the open-loop gain of the amplifier, typically around 120 dB (1,000,000x, or 1,000,000 Volts per

microvolt).

(1)

7.4 Device Functional Modes

7.4.1 Negative-Rail Sensing Input

The input common-mode voltage range of the LPV80x extends from (V-) to (V+) – 0.9 V. In this range, low offset

can be expected with a minimum of 80dB CMRR. The LPV80x is protected from output "inversions" or

"reversals".

7.4.2 Rail to Rail Output Stage

The LPV80x output voltage swings 3.5 mV from rails at 1.8 V supply, which provides the maximum possible

dynamic range at the output. This is particularly important when operating on low supply voltages.

The LPV80x Maximum Output Voltage Swing graph defines the maximum swing possible under a particular

output load.

7.4.3 Design Optimization for Nanopower Operation

When designing for ultralow power, choose system feedback components carefully. To minimize quiecent current

consumption, select large-value feedback resistors. Any large resistors will react with stray capacitance in the

circuit and the input capacitance of the operational amplifier. These parasitic RC combinations can affect the

stability of the overall system. A feedback capacitor may be required to assure stability and limit overshoot or

gain peaking.

LPV801, LPV802

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Device Functional Modes (continued)

When possible, use AC coupling and AC feedback to reduce static current draw through the feedback elements.

Use film or ceramic capacitors since large electolytics may have large static leakage currents in the nanoamps.

7.4.4 Driving Capacitive Load

The LPV80x is internally compensated for stable unity gain operation, with a 8 kHz typical gain bandwidth.

However, the unity gain follower is the most sensitive configuration to capacitive load. The combination of a

capacitive load placed directly on the output of an amplifier along with the amplifier’s output impedance creates a

phase lag, which reduces the phase margin of the amplifier. If the phase margin is significantly reduced, the

response will be under damped which causes peaking in the transfer and, when there is too much peaking, the

op amp might start oscillating.

In order to drive heavy (>50pF) capacitive loads, an isolation resistor, R_ISO, should be used, as shown in

Figure 37. By using this isolation resistor, the capacitive load is isolated from the amplifier’s output. The larger

the value of R_ISO, the more stable the amplifier will be. If the value of R_ISOis sufficiently large, the feedback loop

will be stable, independent of the value of C_L. However, larger values of R_ISOresult in reduced output swing and

reduced output current drive. The recommended value for R_ISOis 30-50kΩ.

ISO

OUT

Figure 37. Resistive Isolation Of Capacitive Load

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LPV80x is a ultra-low power operational amplifier that provides 8 kHz bandwidth with only 320nA typical

quiescent current, and near precision drift specifications. These rail-to-rail output amplifiers are specifically

designed for battery-powered applications. The input common-mode voltage range extends to the negative

supply rail and the output swings to within millivolts of the rails, maintaining a wide dynamic range.

8.2 Typical Application: Three Terminal CO Gas Sensor Amplifier

10 kꢀ

0.1µF

Potentiostat (Bias Loop)

10 kΩ

2.5V

CO Sensor

V_REF

Transimpedance Amplifier (I to V conversion)

R_F

I_SENS

Riso

49.9 kꢀ

R_L

V_TIA

V_REF

1µF

Figure 38. Three Terminal Gas Sensor Amplifer Schematic

8.2.1 Design Requirements

Figure 38 shows a simple micropower potentiostat circuit for use with three terminal unbiased CO sensors,

though it is applicable to many other type of three terminal gas sensors or electrochemical cells.

The basic sensor has three electrodes; The Sense or Working Electrode (“WE”), Counter Electrode (“CE”) and

Reference Electrode (“RE”). A current flows between the CE and WE proportional to the detected concentration.

The RE monitors the potential of the internal reference point. For an unbiased sensor, the WE and RE electrodes

must be maintained at the same potential by adjusting the bias on CE. Through the Potentiostat circuit formed by

U1, the servo feedback action will maintain the RE pin at a potential set by V_REF

R1 is to maintain stability due to the large capacitence of the sensor. C1 and R2 form the Potentiostat integrator

and set the feedback time constant.

U2 forms a transimpedance amplifer ("TIA") to convert the resulting sensor current into a proportional voltage.

The transimpedance gain, and resulting sensitivity, is set by R_Faccording to Equation 2.

V_TIA= (-I * R_F) + V_REF

(2)

R_Lis a load resistor of which the value is normally specified by the sensor manufacturer (typically 10 ohms). The

potential at WE is set by the applied V_REF.Riso provides capacitive isolation and, combined with C2, form the

output filter and ADC reservoir capacitor to drive the ADC.

LPV801, LPV802

www.ti.com.cn

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

Typical Application: Three Terminal CO Gas Sensor Amplifier (continued)

8.2.2 Detailed Design Procedure

For this example, we will be using a CO sensor with a sensitivity of 69nA/ppm. The supply votlage and maximum

ADC input voltage is 2.5V, and the maximum concentration is 300ppm.

First the V_REFvoltage must be determined. This voltage is a compromise between maximum headroom and

resolution, as well as allowance for "footroom" for the minimum swing on the CE terminal, since the CE terminal

generally goes negative in relation to the RE potential as the concentration (sensor current) increases. Bench

measurements found the difference between CE and RE to be 180mV at 300ppm for this particular sensor.

To allow for negative CE swing "footroom" and voltage drop across the 10k resistor, 300mV was chosen for

V_REF

Therefore +300mV will be used as the minimum V_ZEROto add some headroom.

V_ZERO= V_REF= +300mV

where

•

V_ZEROis the zero concentration voltage

V_REFis the reference voltage (300mV)

(3)

Next we calculate the maximum sensor current at highest expected concentration:

I_SENSMAX= I_PERPPM* ppmMAX = 69nA * 300ppm = 20.7uA

where

•

I_SENSMAXis the maximum expected sensor current

I_PERPPMis the manufacturer specified sensor current in Amps per ppm

ppmMAX is the maximum required ppm reading

(4)

(5)

Now find the available output swing range above the reference voltage available for the measurement:

V_SWING= V_OUTMAX– V_ZERO= 2.5V – 0.3V = 2.2V

where

•

V_SWINGis the expected change in output voltage

V_OUTMAXis the maximum amplifer output swing (usually near V+)

Now we calculate the transimpedance resistor (R_F) value using the maximum swing and the maximum sensor

current:

R_F= V_SWING/ I_SENSMAX= 2.2V / 20.7µA = 106.28 kΩ (we will use 110 kΩ for a common value)

(6)

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

Typical Application: Three Terminal CO Gas Sensor Amplifier (continued)

8.2.3 Application Curve

2.50

2.25

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

Vtia

Vdif

105

120

135

150

Time (sec)

C007

Figure 39. Monitored Voltages when exposed to 200ppm CO

Figure 39 shows the resulting circuit voltages when the sensor was exposed to 200ppm step of carbon monoxide

gas. V_Cis the monitored CE pin voltage and clearly shows the expected CE voltage dropping below the WE

voltage, V_W, as the concentration increases.

V_TIAis the output of the transimpedance amplifer U2. V_DIFFis the calculated difference between V_REFand V_TIA

which will be used for the ppm calculation.

300

250

200

150

100

90 105 120 135 150

Time (sec)

C002

C003

Figure 40. Calculated Sensor Current

Figure 41. Calculated ppm

Figure 40 shows the calculated sensor current using the formula in Equation 7 :

I_SENSOR= V_DIFF/ R_F= 1.52V / 110 kΩ = 13.8uA

(7)

(8)

Equation 8 shows the resulting conversion of the sensor current into ppm.

ppm = I_SENSOR/ I_PERPPM= 13.8µA / 69nA = 200

Total supply current for the amplifier section is less than 700 nA, minus sensor current. Note that the sensor

current is sourced from the amplifier output, which in turn comes from the amplifier supply voltage. Therefore,

any continuous sensor current must also be included in supply current budget calculations.

LPV801, LPV802

www.ti.com.cn

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

8.3 Do's and Don'ts

Do properly bypass the power supplies.

Do add series resistance to the output when driving capacitive loads, particularly cables, Muxes and ADC inputs.

Do add series current limiting resistors and external schottky clamp diodes if input voltage is expected to exceed

the supplies. Limit the current to 1mA or less (1KΩ per volt).

9 Power Supply Recommendations

The LPV80x is specified for operation from 1.6 V to 5.5 V (±0.8 V to ±2.75 V) over a –40°C to 125°C temperature

range. Parameters that can exhibit significant variance with regard to operating voltage or temperature are

presented in the Typical Characteristics.

CAUTION

Supply voltages larger than 6 V can permanently damage the device.

For proper operation, the power supplies must be properly decoupled. For decoupling the supply lines it is

suggested that 100 nF capacitors be placed as close as possible to the operational amplifier power supply pins.

For single supply, place a capacitor between V⁺and V^–supply leads. For dual supplies, place one capacitor

between V⁺and ground, and one capacitor between V^–and ground.

Low bandwidth nanopower devices do not have good high frequency (> 1 kHz) AC PSRR rejection against high-

frequency switching supplies and other 1 kHz and above noise sources, so extra supply filtering is recommended

if kilohertz or above noise is expected on the power supply lines.

10 Layout

10.1 Layout Guidelines

The V+ pin should be bypassed to ground with a low ESR capacitor.

The optimum placement is closest to the V+ and ground pins.

Care should be taken to minimize the loop area formed by the bypass capacitor connection between V+ and

ground.

The ground pin should be connected to the PCB ground plane at the pin of the device.

The feedback components should be placed as close to the device as possible to minimize strays.

10.2 Layout Example

Figure 42. SOT-23 Layout Example (Top View)

LPV801, LPV802

ZHCSFD7A –AUGUST 2016–REVISED AUGUST 2016

www.ti.com.cn

11 器件和文档支持

11.1 器件支持

11.1.1 开发支持

TINA-TI 基于 SPICE 的模拟仿真程序，http://www.ti.com.cn/tool/cn/tina-ti

DIP 适配器评估模块，http://www.ti.com.cn/tool/cn/dip-adapter-evm

TI 通用运行放大器评估模块，http://www.ti.com.cn/tool/cn/opampevm

TI FilterPro 滤波器设计软件，http://www.ti.com.cn/tool/cn/filterpro

11.2 接收文档更新通知

如需接收文档更新通知，请访问 www.ti.com.cn 网站上的器件产品文件夹。点击右上角的提醒我 (Alert me) 注册

后，即可每周定期收到已更改的产品信息。有关更改的详细信息，请查阅已修订文档中包含的修订历史记录。

11.3 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

11.4 相关链接

以下表格列出了快速访问链接。范围包括技术文档、支持与社区资源、工具和软件，并且可以快速访问样片或购买

链接。

表 1. 相关链接

器件

产品文件夹

请单击此处

样片与购买

请单击此处

技术文档

请单击此处

工具与软件

请单击此处

支持与社区

请单击此处

LPV801

LPV802

11.5 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.6 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

11.7 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 机械、封装和可订购信息

以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对

本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。

PACKAGE OPTION ADDENDUM

www.ti.com

20-Sep-2022

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

LPV801DBVR

LPV801DBVT

LPV802DGKR

ACTIVE

SOT-23

VSSOP

DBV

DGK

3000 RoHS & Green

250 RoHS & Green

2500 RoHS & Green

250 RoHS & Green

Level-1-260C-UNLIM

-40 to 125

15VM

Samples

NIPDAUAG | SN

LPV

802

LPV802DGKT

ACTIVE

VSSOP

DGK

NIPDAUAG | SN

Level-1-260C-UNLIM

-40 to 125

LPV

802

Samples

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

20-Sep-2022

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

28-Sep-2022

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

LPV801DBVR

LPV801DBVT

LPV802DGKR

LPV802DGKT

SOT-23

VSSOP

DBV

DGK

3000

250

178.0

330.0

178.0

8.4

3.2

5.3

3.2

3.4

1.4

4.0

8.0

2500

250

12.4

13.4

12.0

250

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

28-Sep-2022

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

LPV801DBVR

LPV801DBVT

LPV802DGKR

LPV802DGKT

SOT-23

VSSOP

DBV

DGK

3000

250

208.0

364.0

366.0

202.0

191.0

364.0

201.0

35.0

27.0

50.0

28.0

2500

250

Pack Materials-Page 2

PACKAGE OUTLINE

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

3.0

2.6

0.1 C

1.75

1.45

0.90

PIN 1

INDEX AREA

(0.1)

2X 0.95

1.9

3.05

2.75

1.9

(0.15)

0.5

0.3

0.15

0.00

(1.1)

TYP

0.2

C A B

NOTE 5

0.25

GAGE PLANE

0.22

0.08

TYP

0.6

0.3

TYP

SEATING PLANE

4214839/G 03/2023

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.25 mm per side.

5. Support pin may differ or may not be present.

www.ti.com

EXAMPLE BOARD LAYOUT

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

5X (0.6)

SYMM

(1.9)

2X (0.95)

(R0.05) TYP

(2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED METAL

0.07 MIN

ARROUND

0.07 MAX

ARROUND

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4214839/G 03/2023

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

5X (0.6)

SYMM

(1.9)

2X(0.95)

(R0.05) TYP

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4214839/G 03/2023

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

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