ONET2591TA_17 [TI]
2.5-Gbps Transimpedance Amplifier With AGC and RSSI;
| 型号： | ONET2591TA_17 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 2.5-Gbps Transimpedance Amplifier With AGC and RSSI |
| 文件： | 总15页 (文件大小：950K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ONET2591TA
www.ti.com
SLLS669–SEPTEMBER 2005
2.5-Gbps Transimpedance Amplifier With AGC and RSSI
FEATURES
APPLICATIONS
•
SONET/SDH Transmission Systems at OC24
and OC48
•
•
•
•
•
•
•
1.8-GHz Bandwidth
2.6-kΩ Differential Transimpedance
Automatic Gain Control (AGC)
6.6-pA/√Hz Typical Input Referred Noise
2-mAp-p Maximum Input Current
Received Signal Strength Indication (RSSI)
•
2.125-Gbps and 1.0625-Gbps Fibre-Channel
Receivers
•
•
Gigabit Ethernet Receivers
PIN Preamplifier-Receivers
CML Data Outputs With On-Chip 50-Ω
Back-Termination
•
•
•
On-Chip Supply Filter Capacitor
Single 3.3-V Supply
Die Size: 0,78 mm × 1,18 mm
DESCRIPTION
The ONET2591TA is a high-speed transimpedance amplifier used in optical receivers with data rates up to 2.5
Gbps.
It features a low input referred noise, 1.8-GHz bandwidth, automatic gain control (AGC), 2.6-kΩ transimpedance,
and received signal strength indication (RSSI).
The ONET2591TA is available in die form and is optimized for use in a TO can.
The ONET2591TA requires a single 3.3-V supply, and its power-efficient design typically dissipates less than 53
mW. The device is characterized for operation from –40°C to 85°C ambient temperature.
AVAILABLE OPTIONS
TA
DIE
–40°C to 85°C
ONET2591TAY
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
ONET2591TA
www.ti.com
SLLS669–SEPTEMBER 2005
BLOCK DIAGRAM
The ONET2591TA is a high-performance, 2.5-Gbps transimpedance amplifier consisting of the signal path,
supply filter, a control block for dc input current cancellation, automatic gain control (AGC), received signal
strength indication (RSSI), and a band-gap voltage reference and bias current generation block.
The signal path comprises a transimpedance amplifier stage, a voltage amplifier, and a CML output buffer.
The on-chip filter circuit provides filtered VCC for the photodiode and for the transimpedance amplifier. The dc
input current cancellation and AGC use internal low-pass filters to cancel the dc current on the input and to
adjust the transimpedance amplifier gain. Furthermore, circuitry to monitor the received signal strength is
provided.
A simplified block diagram of the ONET2591TA is shown in Figure 1.
V
CC
Band-Gap Voltage
Reference and
275 pF
Bias Current
Generation
GND
220 W
200 pF
FILTER
DC Input Current
Cancellation,
RSSI
AGC, and RSSI
R
F
OUT+
IN
OUT–
Transimpedance Amplifier
Voltage Amplifier
CML Output Buffer
B0066-01
Figure 1. Simplified Block Diagram of the ONET2591TA
SIGNAL PATH
The first stage of the signal path is a transimpedance amplifier that takes the photodiode current and converts it
into a voltage signal.
If the input signal current exceeds a certain value, the transimpedance gain is reduced by means of AGC
circuitry.
The second stage is a voltage amplifier that provides additional gain and converts its single-ended input voltage
into a differential data signal.
The third signal-path stage is the output buffer, which provides CML outputs with on-chip, 50-Ω back-termination
to VCC
.
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FILTER CIRCUITRY
The filter pin provides filtered VCC for the photodiode bias. The on-chip, low-pass filter for the photodiode VCC is
implemented using a filter resistor of 220 Ω and an internal 200-pF capacitor. The corresponding corner
frequency is below 4 MHz.
If a lower cutoff frequency is required for the intended application, an external capacitor can be connected to one
of the FILTER pins.
The supply voltage for the whole amplifier is filtered by means of an on-chip, 275-pF capacitor as well, thus
avoiding the necessity to use an external supply-filter capacitor.
DC INPUT CURRENT CANCELLATION, AGC, AND RSSI
The voltage drop across the internal photodiode supply-filter resistor is monitored by means of a dc input current
cancellation, AGC, and RSSI control circuit block.
If the dc input current exceeds a certain level, it is partially cancelled by means of a controlled current source.
This measure keeps the transimpedance amplifier stage within sufficient operating point limits for optimum
performance. Furthermore, disabling the dc input cancellation at low input currents leads to superior noise
performance.
The AGC circuitry lowers the effective transimpedance feedback resistor RF by means of a MOSFET device
acting as a controlled shunt. This prevents the transimpedance amplifier from being overdriven at high input
currents, which leads to improved jitter behavior within the complete input-current dynamic range. Because the
voltage drop across the supply-filter resistor is sensed and used by the AGC circuit, the photodiode must be
connected to a FILTER pad for the AGC to function correctly.
Finally, this circuit block senses the current through the filter resistor and generates a mirrored current, which is
proportional to the input signal strength. The mirrored current is available at the RSSI output and must be sunk to
ground (GND) using an external resistor. The RSSI gain can be adjusted by choosing the external resistor;
however, for proper operation, ensure that the voltage at the RSSI pad never exceeds VCC – 0.65 V.
BAND-GAP VOLTAGE AND BIAS GENERATION
The ONET2591TA transimpedance amplifier is supplied by a single, 3.3-V supply voltage connected to the VCC
pad. This voltage is referred to GND.
On-chip band-gap voltage circuitry generates a supply-voltage-independent reference from which all other
internally required voltages and bias currents are derived.
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BOND PAD ASSIGNMENT
The ONET2591TA is available as a bare die. The locations of the bond pads are shown in the following figure.
GND
1
11
GND
GND
2
10
GND
OUT+
3
9
OUT–
V
4
5
6
7
8
RSSI
CC
M0033-01
BOND PAD DESCRIPTION
PAD
TYPE
DESCRIPTION
NAME
NO.
Bias voltage for photodiode (cathode). These pads connect through an internal 220-Ω resistor to
VCC and a 200-pF filter capacitor to ground (GND). Both FILTER pads are connected on-chip.
For additional photodiode supply filtering, connect an external capacitor from one of the FILTER
pads to GND. The FILTER pad(s) must be connected to the photodiode for the AGC to function.
FILTER
5, 6
Analog
Circuit ground. All GND pads are connected on die. Bonding all pads is optional; however, for
optimum performance a good ground connection is mandatory.
GND
1, 2, 10, 11
Supply
IN
7
3
9
Analog input
Data input to TIA (photodiode anode)
OUT+
OUT–
Analog output Non-inverted data output. On-chip 50-Ω back-terminated to VCC
.
Analog output Inverted data output. On-chip 50-Ω back-terminated to VCC
.
Analog output current proportional to the input data amplitude. Indicates the strength of the
received signal (RSSI). Must be sunk through an external resistor to ground (GND). The RSSI
Analog output gain can be adjusted by choosing the external resistor; however, for proper operation, ensure
that the voltage at the RSSI pad never exceeds VCC – 0.65 V. If the RSSI feature is not used,
this pad must be bonded to ground (GND) to ensure proper operation.
RSSI
VCC
8
4
Supply
3.3-V, +10%/–12% supply voltage
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ONET2591TA
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SLLS669–SEPTEMBER 2005
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
(2)
VCC
Supply voltage
–0.3 V to 4 V
–0.3 V to 4 V
(2)
VFILTER, VOUT+, VOUT–
,
Voltage at FILTER, OUT+, OUT–, RSSI
VRSSI
IIN
Current into IN
–0.7 mA to 2.5 mA
– 8 mA to 8 mA
– 8 mA to 8 mA
1.5 kV (HBM)
900 V (HBM)
125°C
IFILTER
IOUT+, IOUT–
Current into FILTER
Continuous current at outputs
(3)
ESD rating at all pins except IN
ESD
(3)
ESD rating at IN
TJ,max
Tstg
Maximum junction temperature
Storage temperature range
–65°C to 85°C
–40°C to 85°C
TA
Operating free-air temperature range
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) For optimum high-frequency performance, the input pin has reduced ESD protection.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
2.9
NOM
MAX
3.6
85
UNIT
V
VCC
TA
Supply voltage
3.3
Operating free-air temperature
Wire-bond inductor at pins FILTER and IN
–40
°C
LFILTER
,
0.8
nH
LIN
DC ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted). Typical values are at VCC = 3.3 V and TA = 25°C.
PARAMETER
Supply voltage
TEST CONDITIONS
MIN
2.9
10
TYP
3.3
14
MAX
3.6
UNIT
VCC
V
Average photodiode current IPD = 0
mA
20
IVCC
Supply current
mA
Average photodiode current IPD = 1
mA
13
40
17
23
VIN
Input bias voltage
0.85
50
1.05
60
V
Ω
Ω
ROUT
RFILTER
Output resistance
Single-ended to VCC
Photodiode filter resistance
220
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AC ELECTRICAL CHARACTERISTICS
over recommended operating conditions (unless otherwise noted). Typical values are at VCC = 3.3 V and TA = 25°C.
PARAMETER
TEST CONDITIONS
MIN
2
TYP
MAX
UNIT
mAp-p
A/A
µA
iIN-OVL
ARSSI
AC input overload current
RSSI gain
(1)
Resistive load to GND
0.95
1
10
1.05
40
RSSI output offset current (no light)
Small-signal transimpedance
Z21
Differential output; input current iIN
=
2000
2600
3200
Ω
50 µAp-p
(2)
fH,3dB
fL,3dB
Small-signal bandwidth
CPD = 0.6 pF, iIN = 50 µAp-p
1.8
40
3.5
280
6.6
8
GHz
kHz
Low-frequency, –3-dB bandwidth
– 3 dB, input current iIN < 50 µAp-p
70
fH,3dB,RSSI RSSI bandwidth
iN-IN Input referred RMS noise
MHz
nA
(3)
CPD = 0.6 pF, 50 kHz–2.5 GHz
345
Input referred noise current density
CPD = 0. 6 pF
pA/√Hz
iIN = 50 µAp-p (K28.5 pattern)
iIN = 100 µAp-p (K28.5 pattern)
iIN = 1 mAp-p (K28.5 pattern)
iIN = 2 mAp-p (K28.5 pattern)
16
20
8.5
3
DJ
Deterministic jitter
psp-p
10
4
14
VOUT,D,MAX Maximum differential output voltage Input current iIN = 1 mAp-p
140
200
310
mVp-p
(1) The RSSI output is a current output, which requires a resistive load to ground (GND). The voltage gain can be adjusted for the intended
application by choosing the external resistor. However, for proper operation of the ONET2591TA, ensure that the voltage at RSSI never
exceeds VCC – 0.65 V.
(2) The minimum small-signal bandwidth is specified over process corners, temperature, and supply voltage variation. The assumed
photodiode capacitance is 0.6 pF. The bond-wire inductance is 0.8 nH. The small-signal bandwidth strongly depends on environmental
parasitics. Careful attention to layout parasitics and external components is necessary to achieve optimal performance.
(3) Input referred RMS noise is (RMS output noise)/(gain @ 100 MHz). The maximum input referred noise is specified over process
corners, temperature, and supply voltage variation.
TYPICAL CHARACTERISTICS
Typical operating condition is at VCC = 3.3 V and TA = 25°C.
UNFILTERED INPUT REFERRED NOISE
UNFILTERED INPUT REFERRED NOISE
vs
vs
AVERAGE INPUT CURRENT
AMBIENT TEMPERATURE
2400
2200
2000
1800
1600
1400
1200
1000
800
800
700
600
500
400
300
200
100
0
600
400
200
0
10
100
1k
−40−30−20−10 0 10 20 30 40 50 60 70 80 90
Average Input Current − µA
T
A
− Ambient Temperature − °C
G001
G002
Figure 2.
Figure 3.
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TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at VCC = 3.3 V and TA = 25°C.
SMALL-SIGNAL TRANSIMPEDANCE
TRANSIMPEDANCE
vs
vs
AMBIENT TEMPERATURE
AVERAGE INPUT CURRENT
4000
3500
3000
2500
2000
1500
3000
2500
2000
1500
1000
500
1000
0
−40−30−20−10 0 10 20 30 40 50 60 70 80 90
0
100 200 300 400 500 600 700 800 900 1000
T
A
− Ambient Temperature − °C
Average Input Current − µA
G003
G004
Figure 4.
Figure 5.
SMALL-SIGNAL TRANSFER CHARACTERISTICS
SMALL-SIGNAL BANDWIDTH
vs
AMBIENT TEMPERATURE
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
1.55
1.50
70
69
68
67
66
65
64
63
62
61
60
−40−30−20−10 0 10 20 30 40 50 60 70 80 90
100
200
500
1k
2k
5k
T
A
− Ambient Temperature − °C
f − Frequency − MHz
G006
G005
Figure 6.
Figure 7.
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TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at VCC = 3.3 V and TA = 25°C.
RSSI OUTPUT CURRENT
vs
AVERAGE INPUT CURRENT
DETERMINISTIC JITTER
vs
INPUT CURRENT
10
9
8
7
6
5
4
3
2
1
0
1200
1000
800
600
400
200
0
0
400
800
1200
1600
2000
0
200
400
600
800
1000
1200
Input Current − µA
Average Input Current − µA
P−P
G008
G007
Figure 8.
Figure 9.
OUTPUT EYE DIAGRAM AT 2.5 GBPS AND 10-µAp-p INPUT
OUTPUT EYE DIAGRAM AT 2.5 GBPS AND 100-µAp-p
CURRENT
INPUT CURRENT
Time − 100ps/Div
Time − 100ps/Div
G009
G010
Figure 10.
Figure 11.
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TYPICAL CHARACTERISTICS (continued)
Typical operating condition is at VCC = 3.3 V and TA = 25°C.
OUTPUT EYE DIAGRAM AT 2.5 GBPS AND 1-mAp-p INPUT
CURRENT
OUTPUT EYE DIAGRAM AT 2.5 GBPS AND 2-mAp-p INPUT
CURRENT
Time − 100ps/Div
Time − 100ps/Div
G011
G012
Figure 12.
Figure 13.
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ONET2591TA
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APPLICATION INFORMATION
Figure 14 shows an application circuit for an ONET2591TA being used in a typical fiber-optic receiver. The
ONET2591TA converts the electrical current generated by the PIN photodiode into a differential output voltage.
The FILTER input provides a dc bias voltage for the PIN that is low-pass filtered by the combination of the
internal 220-Ω resistor and 200-pF capacitor. For additional power-supply filtering, use an external capacitor,
CFILTER. Because the voltage drop across the 220-Ω resistor is sensed and used by the AGC circuit, the
photodiode must be connected to a FILTER pad for the AGC to function correctly.
The RSSI output is used to mirror the photodiode average current and must be connected via a resistor to GND.
The voltage gain can be adjusted for the intended application by choosing the external resistor. However, for
proper operation of the ONET2591TA, ensure that the voltage at RSSI never exceeds VCC – 0.65 V. If the RSSI
output is not used, it must be grounded.
The OUT+ and OUT– pads are internally terminated by 50-Ω pullup resistors to VCC. The outputs must be
ac-coupled (e.g., using C1 = C2 = 0.1 µF) to the succeeding device. An additional capacitor, CNBW, which is
differentially connected between the two output pins OUT+ and OUT–, can be used to limit the noise bandwidth
and thus optimize the noise performance.
C
1
0.1 mF
OUT+
V
CC
3
2
1
4
220 W
ONET
2591TA
5
6
7
C
NBW
0 to 2 pF
Optional
200 pF 275 pF
11
8
9
10
C
2
0.1 mF
C
FILTER
OUT–
RSSI
Optional
GND
S0097-01
Figure 14. Basic Application Circuit
ASSEMBLY RECOMMENDATIONS
When packaging the ONET2591TA, careful attention to parasitics and external components is necessary to
achieve optimal performance. Recommendations that optimize performance include:
1. Minimize total capacitance on the IN pad by using a low-capacitance photodiode and paying attention to
stray capacitances. Place the photodiode close to the ONET2591TA die to minimize the bond wire length
and thus the parasitic inductance.
2. An external filter capacitance CFILTER can be used to improve photodiode supply filtering.
3. Use identical termination and symmetrical transmission lines at the ac-coupled differential output pins OUT+
and OUT–. A differential capacitor CNBW can be used to limit the noise bandwidth.
4. Use short bond-wire connections for the supply terminals VCC and GND. Supply-voltage filtering is provided
on-chip. Filtering can be improved by using an additional external capacitor.
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CHIP DIMENSIONS AND PAD LOCATIONS
Overall chip dimensions and depiction of the bond-pad locations are given in Figure 15. Layout of the chip
componentry is shown in Figure 16.
1
11
2
10
3
9
4
5
6
7
8
Origin
0,0
780 mm
x
M0033-02
Figure 15. Chip Dimensions and Pad Locations
Origin
0,0
780 mm
x
M0033-03
Figure 16. Chip Layout
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Pad Locations and Descriptions for the ONET2591TA
COORDINATES
x (µm) y (µm)
100
PAD
SYMBOL
TYPE
DESCRIPTION
1
2
1063
938
570
127
127
127
127
127
570
938
1063
GND
GND
OUT+
VCC
Supply
Supply
Circuit ground
Circuit ground
100
100
90
3
Analog output
Supply
Non-inverted data output
3.3-V supply voltage
Bias voltage for photodiode
Bias voltage for photodiode
Data input to TIA
4
5
265
390
515
690
680
680
680
FILTER
FILTER
IN
Analog
6
Analog
7
Analog input
Analog output
Analog output
Supply
8
RSSI
OUT–
GND
RSSI output signal
Inverted data output
Circuit ground
9
10
11
GND
Supply
Circuit ground
DIE INFORMATION
Die size: 1180 µm × 780 µm
Die thickness: 8 mils (203 µm)
Pad metallization: 99.5% Al, 0.5% Cu
Pad size: octagonal pads, 120 µm × 100 µm
Passivation composition: 6000 Å silicon nitride
Backside contact: none
Die ID: 2591TA
TO46 LAYOUT EXAMPLES
Examples for layouts (top view) in 5-pin and 4-pin TO46 headers are given in Figure 17 and Figure 18,
respectively.
GND
OUT+
OUT–
VCC
RSSI
M0034-01
Figure 17. TO46 5-Pin Layout Example Using the ONET2591TA
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VCC
OUT+
OUT–
GND
M0034-02
Figure 18. TO46 4-Pin Layout Example Using the ONET2591TA
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PACKAGE OPTION ADDENDUM
www.ti.com
11-Jan-2008
PACKAGING INFORMATION
Orderable Device
ONET2591TAY
ONET2591TAYS
Status (1)
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
DIESALE
Y
0
1
Green (RoHS &
no Sb/Br)
Call TI
N / A for Pkg Type
WAFER
SALE
YS
0
1
Green (RoHS &
no Sb/Br)
Call TI
N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in
such safety-critical applications.
TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are
specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, TI will not be responsible for any failure to meet such requirements.
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Applications
Audio
Automotive
Broadband
Digital Control
Medical
Amplifiers
Data Converters
DSP
Clocks and Timers
Interface
amplifier.ti.com
dataconverter.ti.com
dsp.ti.com
www.ti.com/clocks
interface.ti.com
logic.ti.com
www.ti.com/audio
www.ti.com/automotive
www.ti.com/broadband
www.ti.com/digitalcontrol
www.ti.com/medical
www.ti.com/military
Logic
Military
Power Mgmt
Microcontrollers
RFID
power.ti.com
microcontroller.ti.com
www.ti-rfid.com
Optical Networking
Security
Telephony
Video & Imaging
Wireless
www.ti.com/opticalnetwork
www.ti.com/security
www.ti.com/telephony
www.ti.com/video
RF/IF and ZigBee® Solutions www.ti.com/lprf
www.ti.com/wireless
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright 2008, Texas Instruments Incorporated
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