ONET3301PARGTTG4 [TI]

ATM/SONET/SDH SUPPORT CIRCUIT, PQCC16, 3 X 3 MM, 0.50 MM PITCH, PLASTIC, QFN-16;
ONET3301PARGTTG4
型号: ONET3301PARGTTG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

ATM/SONET/SDH SUPPORT CIRCUIT, PQCC16, 3 X 3 MM, 0.50 MM PITCH, PLASTIC, QFN-16

ATM 异步传输模式 电信 电信集成电路
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中文:  中文翻译
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ꢆ ꢉ ꢉ ꢊꢋꢌ ꢍ ꢎ ꢃ ꢀ ꢄ ꢏꢄ ꢊꢐ ꢌ ꢍꢎ ꢑ ꢒꢋ ꢒꢃ ꢒꢁ ꢐ ꢈꢋ ꢇ ꢑꢒ ꢓꢒ ꢂꢔ  
SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
D
D
Single 3.3-V Supply  
features  
Surface Mount Small Footprint 3 mm ×  
3 mm 16-Pin QFN Package  
D
Multi-Rate Operation from 155 Mbps Up To  
3.3 Gbps  
D
D
D
D
D
D
D
D
106-mW Power Consumption  
Input Offset Cancellation  
High Input Dynamic Range  
Output Disable  
applications  
D
SONET/SDH Transmission Systems at OC3,  
OC12, OC24, OC48  
D
D
1.0625-Gbps and 2.125-Gbps Fibre Channel  
Receivers  
Output Polarity Select  
CML Data Outputs  
Gigabit Ethernet Receivers  
Receive Signal Strength Indicator (RSSI)  
Loss of Signal Detection  
description  
The ONET3301PA is a versatile high-speed limiting amplifier for multiple fiber optic applications with data rates  
up to 3.3 Gbps.  
This device provides a gain of about 50 dB, which ensures a fully differential output swing for input signals as  
low as 3 mV  
.
p−p  
The high input signal dynamic range ensures low jitter output signals even when overdriven with input signal  
swings as high as 1200 mV  
.
p−p  
The ONET3301PA includes loss of signal detection, as well as a received signal strength indicator.  
The ONET3301PA is available in a small footprint 3 mm × 3 mm 16-pin QFN package and requires a single 3.3-V  
supply.  
This power efficient limiting amplifier typically dissipates less than 106 mW. It is characterized for operation from  
–40°C to 85°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢃꢢ  
Copyright 2005, Texas Instruments Incorporated  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
block diagram  
A simplified block diagram of the ONET3301PA is shown in Figure 1.  
This compact, low power 3.3-Gbps limiting amplifier consists of a high-speed data path with offset cancellation  
block, a loss of signal and RSSI detection block, and a bandgap voltage reference and bias current generation  
block.  
The limiting amplifier requires a single 3.3-V supply voltage. All circuit parts are described in detail below.  
COC2 COC1  
VCC  
Offset  
Cancellation  
GND  
OUTPOL  
VCCO  
DIN+  
DIN−  
+
+
+
+
+
DOUT+  
DOUT−  
CML  
Output  
Buffer  
Input Buffer  
Gain Stage  
Gain Stage  
Gain Stage  
DISABLE  
Bandgap Voltage  
Reference and  
Bias Current  
Generation  
Loss of Signal  
and  
RSSI Detection  
LOS  
RSSI  
TH  
Figure 1. Block Diagram  
high-speed data path  
The high-speed data signal is applied to the data path by means of the input signal pins DIN+/DIN–. The data  
path consists of the input stage with 2 × 50-on-chip line termination to VCC, three gain stages, which provide  
the required typical gain of about 50 dB and a CML output stage. The amplified data output signal is available  
at the output pins DOUT+/DOUT–, which provide 2 × 50-back-termination to VCCO. The output stage also  
includes a data polarity switching function, which is controlled by the OUTPOL input and a disable function,  
controlled by the signal applied to the DISABLE input pin.  
An offset cancellation compensates inevitable internal offset voltages and thus ensures proper operation even  
for small input data signals.  
The low frequency cutoff is as low as 45 kHz with the built-in filter capacitor.  
For applications, which require even lower cutoff frequencies, an additional external filter capacitor may be  
connected to the COC1/COC2 pins.  
loss of signal and RSSI detection  
The output signal of the input buffer is monitored by the loss of signal and RSSI detection circuitry. In this block  
a signal is generated, which is linearly proportional to the input amplitude over a wide input voltage range. This  
signal is available at the RSSI output pin.  
Furthermore, this circuit block compares the input signal to a threshold, which can be programmed by means  
of an external resistor connected to the TH pin. If the input signal falls below the specified threshold, a loss of  
signal is indicated at the LOS pin.  
2
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
The relation between the LOS assert voltage V  
to the TH pin can be approximated as given below:  
(in mV ) and the external resistor R (in k) connected  
p−p TH  
AST  
43 kW  
R
V
[
* 600 W  
TH  
V
ń mV  
p*p  
AST  
43 mV  
(1)  
(2)  
p*p  
ń kW ) 0.6  
[
AST  
R
TH  
bandgap voltage and bias generation  
The ONET3301PA limiting amplifier is supplied by a single 3.3-V 10% supply voltage connected to the VCC  
and VCCO pins. This voltage is referred to ground (GND).  
An on-chip bandgap voltage circuitry generates a supply voltage independent reference from which all other  
internally required voltages and bias currents are derived.  
package  
For the ONET3301PA, a small footprint 3 mm × 3 mm 16-pin QFN package is used with a lead pitch of 0,5 mm.  
The pin out is shown in Figure 2.  
16 15 14 13  
1
2
3
4
VCC  
DIN+  
VCCO  
12  
11  
DOUT+  
DOUT−  
OUTPOL  
10  
9
DIN−  
VCC  
5
6
7
8
Figure 2. Pinout of ONET3301PA in a 3 mm y 3 mm 16-Pin QFN Package (Top View)  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
terminal functions  
The following table shows a pin description for the ONET3301PA in a 3 mm x 3 mm 16-pin QFN package.  
TERMINAL  
TYPE  
DESCRIPTION  
NAME  
VCC  
NO.  
1, 4  
Supply  
3.3-V 10% supply voltage  
DIN+  
2
Analog in Noninverted data input. On-chip 50-terminated to VCC  
Analog in Inverted data input. On-chip 50-terminated to VCC  
DIN–  
3
TH  
5
Analog in LOS threshold adjustment with resistor to GND.  
DISABLE  
LOS  
6
CMOS in Disables CML output stage when set to high level.  
7
8, 16, EP  
9
CMOS out High level indicates that the input signal amplitude is below the programmed threshold level.  
GND  
Supply  
Circuit ground. Exposed die pad (EP) must be grounded.  
OUTPOL  
CMOS in Output data signal polarity select (internally pulled up): Setting to high level or leaving pin open selects  
normal polarity. Low level selects inverted polarity.  
DOUT–  
DOUT+  
VCCO  
RSSI  
10  
11  
12  
13  
CML out  
CML out  
Supply  
Inverted data output. On-chip 50-back-terminated to VCCO  
Noninverted data output. On-chip 50-back-terminated to VCCO  
3.3-V 10% supply voltage for output stage  
Analog out Analog output voltage proportional to the input data amplitude. Indicates the strength of the received  
signal (RSSI).  
COC1  
COC2  
14  
15  
Analog  
Offset cancellation filter capacitor terminal 1. Connect an additional filter capacitor between this pin  
and COC2 (pin 15). To disable the offset cancellation loop connect COC1 and COC2 (pins 14 and 15).  
Analog  
Offset cancellation filter capacitor terminal 2. Connect an additional filter capacitor between this pin  
and COC1 (pin 14). To disable the offset cancellation loop connect COC1 and COC2 (pins 14 and 15).  
absolute maximum ratings  
over operating free-air temperature range unless otherwise noted  
VALUE  
–0.3 to 4  
0.5 to 4  
UNIT  
V
, V  
CC CCO  
Supply voltage, See Note 1  
V
V
V
V , V  
DIN+ DIN−  
Voltage at DIN+, DIN–, See Note 1  
V
,V  
,V  
, V  
,V  
,V  
,
Voltage at TH, DISABLE, LOS, OUTPOL, DOUT+, DOUT–, RSSI,  
COC1, and COC2, See Note 1  
–0.3 to 4  
TH DISABLE LOS OUTPOL DOUT+  
V
, V  
, V  
DOUT− RSSI COC1 COC2  
V
Differential voltage between COC1 and COC2  
Differential voltage between DIN+ and DIN–  
Current into LOS  
1
2.5  
V
V
COC_DIFF  
DIN_DIFF  
LOS  
V
I
I
–1 to 9  
–25 to 25  
3
mA  
, I  
, I  
, I  
Continuous current at inputs and outputs  
ESD rating at all pins  
mA  
DIN+ DIN− DOUT+ DOUT–  
ESD  
kV (HBM)  
°C  
T
Maximum junction temperature  
125  
J(max)  
T
Storage temperature range  
−65 to 85  
−40 to 85  
260  
°C  
stg  
T
A
Characterized free-air operating temperature range  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  
°C  
T
L
°C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTE 1: All voltage values are with respect to network ground terminal.  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
recommended operating conditions  
MIN  
3
TYP  
MAX  
3.6  
UNIT  
V
Supply voltage, V , V  
CC CCO  
3.3  
Operating free-air temperature, T  
−40  
85  
°C  
A
dc electrical characteristics  
over recommended operating conditions (unless otherwise noted), typical operating condition is at V  
= 3.3 V and  
CC  
T = 25°C  
A
PARAMETER  
Supply voltage  
TEST CONDITIONS  
MIN  
TYP  
3.3  
MAX  
UNIT  
V
V
,V  
3
3.6  
40  
CC CCO  
I
Supply current  
DISABLE = low (excludes CML output current)  
DISABLE = high  
32  
0.25  
780  
50  
mA  
CC  
10 mV  
p−p  
V
OD  
Differential data output voltage swing  
Data input/output resistance  
DISABLE = low  
600  
1200 mV  
p−p  
r
, r  
IN OUT  
Single ended  
Input = 2 mV  
, R  
10 kΩ  
10 kΩ  
100  
2800  
3%  
p−p RSSI  
RSSI output voltage  
mV  
Input = 80 mV , R  
p−p RSSI  
RSSI linearity  
20−dB input signal, V 80 mVpp  
–10  
BER < 10  
8%  
5
IN  
V
V
Data input sensitivity  
Data input overload  
CMOS input high voltage  
CMOS input low voltage  
LOS high voltage  
3
mV  
(IN_MIN)  
p−p  
1200  
2.1  
mV  
(IN_MAX)  
p−p  
V
0.6  
0.4  
V
V
I
= –30 µA  
2.4  
2.5  
SINK  
LOS low voltage  
I
= 1 mA  
V
SOURCE  
23  
LOS hysteresis  
2
2
−1 PRBS (at 2.5 Gbps and 155 Mbps)  
−1 PRBS (at 2.5 Gbps and 155 Mbps)  
4.5  
dB  
23  
V
TH  
LOS assert threshold range  
5−40  
mV  
p−p  
ac electrical characteristics  
over recommended operating conditions (unless otherwise noted), typical operating condition is at V  
= 3.3 V and  
CC  
T = 25°C  
A
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
45  
MAX  
UNIT  
C
C
= open  
70  
OC  
OC  
Low frequency −3-dB bandwidth  
kHz  
= 100 nF  
0.8  
Data rate  
3.3  
Gb/s  
v
Input referred noise  
180  
8.5  
9.3  
7.8  
25  
µV  
RMS  
NI  
K28.5 pattern at 3.3 Gbps  
23  
25  
30  
25  
50  
2
−1 PRBS equivalent pattern at 2.7 Gbps  
K28.5 pattern at 2.1 Gbps  
23  
DJ  
Deterministic jitter, See Note 2  
Random jitter  
ps  
p−p  
2
−1 PRBS equivalent pattern at 155 Mbps  
Input = 5 mVpp  
Input = 10 mVpp  
20% to 80%  
20% to 80%  
f < 2 MHz  
6.5  
3
RJ  
ps  
RMS  
t
t
Output rise time  
60  
85  
85  
ps  
ps  
dB  
ns  
µs  
r
Output fall time  
60  
f
PSNR  
Power supply noise rejection  
Disable response time  
LOS assert/deassert time  
26  
2
t
t
20  
DIS  
100  
LOS  
NOTE 2: Deterministic jitter does not include pulse-width distortion due to residual small output offset voltage.  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
APPLICATION INFORMATION  
Figure 3 shows the ONET3301PA connected with an ac-coupled interface to the data signal source as well as  
to the output load.  
Besides the ac-coupling capacitors, C through C in the input and output data signal lines, the only required  
1
4
external component is the LOS threshold setting resistor R . In addition, an optional external filter capacitor  
TH  
(C ) may be used if a lower cutoff frequency is desired.  
OC  
C
OC  
Optional  
RSSI  
VCC  
VCCO  
VCC  
C
C
C
C
1
2
3
4
DIN+  
DIN−  
DIN+  
DIN−  
VCC  
DOUT+  
DOUT+  
DOUT−  
OUTPOL  
ONET3301PA  
16-Pin QFN  
DOUT−  
OUTPOL  
DISABLE  
LOS  
R
TH  
Figure 3. Basic Application Circuit With AC-Coupled I/Os  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
DIFFERENTIAL OUTPUT VOLTAGE  
vs  
RANDOM JITTER  
vs  
DIFFERENTIAL INPUT VOLTAGE  
DIFFERENTIAL INPUT VOLTAGE  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
10  
9
8
7
6
5
4
3
2
1
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
35  
40  
V
ID  
− Differential Input Voltage − mV  
V
ID  
− Differential Input Voltage − mV  
P-P  
P-P  
Figure 4  
Figure 5  
BIT ERROR RATIO  
vs  
SMALL SIGNAL GAIN  
vs  
DIFFERENTIAL INPUT VOLTAGE  
FREQUENCY  
0
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
-2  
-4  
-6  
-8  
10  
10  
10  
10  
-10  
10  
-12  
10  
-14  
10  
-16  
10  
-18  
10  
0
0.01  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
0.1  
1
10  
100  
1k  
10k  
V
ID  
− Differential Input Voltage − mV  
f − Frequency − MHz  
Figure 7  
P-P  
Figure 6  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
OUTPUT EYE-DIAGRAM AT 3.3 GBPS AND  
OUTPUT EYE-DIAGRAM AT 3.3 GBPS AND  
MAXIMUM INPUT VOLTAGE (1200 mV  
)
MINIMUM INPUT VOLTAGE (5 mV  
)
p−p  
p−p  
t − Time − 100 ps/Div  
t − Time − 100 ps/Div  
Figure 8  
Figure 9  
OUTPUT EYE-DIAGRAM AT  
3.3 GBPS, 855 C, AND MINIMUM  
INPUT VOLTAGE (5 mV  
)
p−p  
t − Time − 100 ps/Div  
Figure 10  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
OUTPUT EYE-DIAGRAM AT 2.5 GBPS AND  
OUTPUT EYE-DIAGRAM AT 2.5 GBPS AND  
MAXIMUM INPUT VOLTAGE (1200 mV  
)
MINIMUM INPUT VOLTAGE (5 mV  
)
p−p  
p−p  
t − Time − 100 ps/Div  
t − Time − 100 ps/Div  
Figure 11  
Figure 12  
LOS ASSERT/DEASSERT VOLTAGE  
vs  
DIFFERENTIAL INPUT RETURN GAIN  
vs  
EXTERNAL RESISTANCE R  
FREQUENCY  
TH  
70  
60  
50  
40  
30  
20  
10  
0
0
−5  
−10  
−15  
−20  
−25  
−30  
−35  
−40  
−45  
−50  
LOS Deassert Voltage  
LOS Assert Voltage  
0
2
4
6
8
10  
12  
14  
0.1  
1
5
R
− Threshold Voltage Setting Resistance − kΩ  
f − Frequency − GHz  
TH  
Figure 13  
Figure 14  
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SLLS603C − MARCH 2004 − REVISED OCTOBER 2005  
DIFFERENTIAL OUTPUT RETURN GAIN  
RECEIVE SIGNAL STRENGTH INDICATOR  
vs  
vs  
FREQUENCY  
DIFFERENTIAL INPUT VOLTAGE  
0
−5  
2800  
2600  
2400  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
−10  
−15  
−20  
−25  
−30  
−35  
−40  
−45  
−50  
600  
400  
200  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0.1  
1
5
f − Frequency − GHz  
V
ID  
− Differential Input Voltage − mV  
P-P  
Figure 15  
Figure 16  
10  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2014  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(6)  
(3)  
(4/5)  
ONET3301PARGTR  
NRND  
QFN  
RGT  
16  
3000  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU  
Level-2-260C-1 YEAR  
-40 to 85  
301P  
PYML  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish  
value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2014  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
12-Aug-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
ONET3301PARGTR  
QFN  
RGT  
16  
3000  
330.0  
12.4  
3.3  
3.3  
1.1  
8.0  
12.0  
Q2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
12-Aug-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
QFN RGT 16  
SPQ  
Length (mm) Width (mm) Height (mm)  
338.1 338.1 20.6  
ONET3301PARGTR  
3000  
Pack Materials-Page 2  
IMPORTANT NOTICE  
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest  
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Copyright © 2014, Texas Instruments Incorporated  

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