OPA202IDGKR [TI]

OPAx202 Precision, Low-Noise, Heavy Capacitive Drive, 36-V Operational Amplifiers;
OPA202IDGKR
型号: OPA202IDGKR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

OPAx202 Precision, Low-Noise, Heavy Capacitive Drive, 36-V Operational Amplifiers

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OPA202, OPA2202, OPA4202  
SBOS812H OCTOBER 2017REVISED MAY 2020  
OPAx202 Precision, Low-Noise, Heavy Capacitive Drive, 36-V Operational Amplifiers  
1 Features  
3 Description  
The OPA202, OPA2202, and OPA4202 (OPAx202)  
are a family of devices built on TI's industry-leading  
1
Precision super-beta performance:  
Low offset voltage: 200 µV (maximum)  
Ultra-low drift: 1 µV/°C (maximum)  
precision  
super-beta,  
complementary,  
bipolar  
semiconductor process. This process offers ultra-low  
flicker noise, low offset voltage, low offset voltage  
temperature drift, and excellent linearity with  
common-mode and power-supply variation. These  
devices offer an exceptional combination of dc  
precision, heavy capacitive load drive, and protection  
against external EMI, thermal, and short-circuit  
events.  
Excellent efficiency:  
Quiescent current: 580 µA (typical)  
Gain-bandwidth product: 1 MHz  
Low input voltage noise: 9 nV/Hz  
Ease of use, design simplicity:  
Heavy capacitive load drive: 5-µs settling time  
with 25 nF  
The supply current is 580 µA at ±18 V. The OPAx202  
do not exhibit phase inversion, and the series is  
stable with high capacitive loads. The OPAx202 are  
fully specified with a temperature range from –40°C  
to +105°C.  
Ultra-high input impedance: 3000 GΩ and  
0.5 pF  
EMI hardened, thermal, and short-circuit  
protection  
Device Information(1)  
Stable Performance:  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
4.90 mm × 3.91 mm  
2.90 mm × 1.60 mm  
3.00 mm × 3.00 mm  
3.00 mm × 3.00 mm  
4.90 mm × 3.91 mm  
8.65 mm × 3.91 mm  
5.00 mm × 4.40 mm  
High CMRR and AOL: 126 dB (minimum)  
High PSRR: 126 dB (minimum)  
SOIC (8)  
OPA202  
SOT-23 (5)  
VSSOP (8)  
VSSOP (8)  
SOIC (8)  
Low bias current: 2 nA (maximum)  
Low 0.1-Hz to 10-Hz noise: 0.2 µVPP  
Wide supply voltage: ±2.25 V to ±18 V  
Replaces OP-07 and OP-27  
OPA2202  
OPA4202  
SOIC (14)  
TSSOP (14)  
2 Applications  
(1) For all available packages, see the package option addendum  
at the end of the data sheet.  
Data acquisition (DAQ)  
Lab and field instrumentation  
Merchant network and server PSU  
Multiparameter patient monitor  
String inverter  
OPAx202 Excel Even When Directly Driving Heavy  
Capacitive Loads  
Input Voltage Noise and Current Noise Spectral  
Density vs Frequency  
1000  
100  
10  
1000  
100  
10  
10  
8
6
4
2
25000 pF  
0
œ2  
œ4  
Voltage Noise  
Current Noise  
œ6  
1
10m 100m  
1
1M  
œ8  
1
10  
100  
Frequency (Hz)  
1k  
10k  
100k  
CL = 28 pF to 25000 pF  
œ10  
0
1
2
3
4
5
Time (s)  
C003  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
OPA202, OPA2202, OPA4202  
SBOS812H OCTOBER 2017REVISED MAY 2020  
www.ti.com  
Table of Contents  
7.4 Device Functional Modes........................................ 26  
Application and Implementation ........................ 27  
8.1 Application Information............................................ 27  
8.2 Typical Application ................................................. 29  
Power Supply Recommendations...................... 30  
1
2
3
4
5
6
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions......................... 4  
Specifications......................................................... 7  
6.1 Absolute Maximum Ratings ...................................... 7  
6.2 ESD Ratings.............................................................. 7  
6.3 Recommended Operating Conditions....................... 7  
6.4 Thermal Information: OPA202 .................................. 8  
6.5 Thermal Information: OPA2202 ................................ 8  
6.6 Thermal Information: OPA4202 ................................ 8  
6.7 Electrical Characteristics........................................... 9  
6.8 Typical Characteristics............................................ 11  
6.9 Typical Characteristics............................................ 12  
Detailed Description ............................................ 19  
7.1 Overview ................................................................. 19  
7.2 Functional Block Diagram ....................................... 19  
7.3 Feature Description................................................. 20  
8
9
10 Layout................................................................... 31  
10.1 Layout Guidelines ................................................. 31  
10.2 Layout Example .................................................... 31  
11 Device and Documentation Support ................. 32  
11.1 Device Support...................................................... 32  
11.2 Documentation Support ........................................ 32  
11.3 Related Links ........................................................ 33  
11.4 Receiving Notification of Documentation Updates 33  
11.5 Support Resources ............................................... 33  
11.6 Trademarks........................................................... 33  
11.7 Electrostatic Discharge Caution............................ 33  
11.8 Glossary................................................................ 33  
7
12 Mechanical, Packaging, and Orderable  
Information ........................................................... 33  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision G (March 2020) to Revision H  
Page  
Changed OPA202 VSSOP (DGK) and OPA2202 SOIC (D) packages from preview to production data (active)................. 1  
Changes from Revision F (February 2020) to Revision G  
Page  
Changed OPA4202 14-pin TSSOP (PW) package from preview to production data (active) ............................................... 1  
Added OPA2202 8-pin SOIC (D) preview package and associated content to data sheet ................................................... 1  
Changes from Revision E (February 2020) to Revision F  
Page  
Added OPA4202 14-pin TSSOP (PW) preview package and associated content to data sheet........................................... 1  
Changed Figure 19, Input Voltage Noise and Current Noise Spectral Density vs Frequency, to more accurately  
represent the input current noise behavior of the device ..................................................................................................... 15  
Changes from Revision D (December 2019) to Revision E  
Page  
Added OPA202 8-pin VSSOP (DGK) preview package and associated content to data sheet............................................. 1  
Changes from Revision C (October 2018) to Revision D  
Page  
Changed OPA2202 and OPA4202 devices from advanced information (preview) to production data (active) .................... 1  
Changes from Revision B (December 2018) to Revision C  
Page  
Added OPA2202 and OPA4202 preview devices and associated content to data sheet...................................................... 1  
Deleted Operating Voltage section; redundant information.................................................................................................. 20  
2
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Product Folder Links: OPA202 OPA2202 OPA4202  
 
OPA202, OPA2202, OPA4202  
www.ti.com  
SBOS812H OCTOBER 2017REVISED MAY 2020  
Changes from Revision A (September 2018) to Revision B  
Page  
Changed SOT-23 package from preview to production data ................................................................................................. 1  
Changes from Original (October 2017) to Revision A  
Page  
Added preview content for SOT-23 package offering ........................................................................................................... 1  
Copyright © 2017–2020, Texas Instruments Incorporated  
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3
Product Folder Links: OPA202 OPA2202 OPA4202  
OPA202, OPA2202, OPA4202  
SBOS812H OCTOBER 2017REVISED MAY 2020  
www.ti.com  
5 Pin Configuration and Functions  
OPA202 D and DGK Packages  
8-Pin SOIC and 8-Pin VSSOP  
Top View  
OPA202 DBV Package  
5-Pin SOT-23  
Top View  
NC  
œIN  
+IN  
Vœ  
1
2
3
4
8
7
6
5
NC  
V+  
OUT  
Vœ  
1
2
3
5
V+  
œ
OUT  
NC  
+
+IN  
4
œIN  
Not to scale  
Not to scale  
Pin Functions: OPA202  
PIN  
NO.  
I/O  
DESCRIPTION  
NAME  
D (SOIC)  
DGK (VSSOP)  
DBV (SOT-23)  
–IN  
+IN  
NC  
OUT  
V–  
2
4
3
I
Inverting input  
Noninverting input  
3
I
1, 5, 8  
1
O
No internal connection (can be left floating)  
Output  
6
4
7
2
Negative (lowest) power supply  
Positive (highest) power supply  
V+  
5
4
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Product Folder Links: OPA202 OPA2202 OPA4202  
OPA202, OPA2202, OPA4202  
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SBOS812H OCTOBER 2017REVISED MAY 2020  
OPA2202 D and DGK Packages  
8-Pin SOIC VSSOP  
Top View  
OUT A  
œIN A  
+IN A  
Vœ  
1
2
3
4
8
7
6
5
V+  
OUT B  
œIN B  
+IN B  
Not to scale  
Pin Functions: OPA2202  
PIN  
I/O  
DESCRIPTION  
NAME  
–IN A  
+IN A  
–IN B  
+IN B  
OUT A  
OUT B  
V–  
NO.  
2
I
I
Inverting input channel A  
Noninverting input channel A  
Inverting input channel B  
Noninverting input channel B  
Output channel A  
3
6
I
5
I
1
O
O
7
Output channel B  
4
Negative supply  
V+  
8
Positive supply  
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5
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OPA202, OPA2202, OPA4202  
SBOS812H OCTOBER 2017REVISED MAY 2020  
www.ti.com  
OPA4202 D and PW Packages  
14-Pin SOIC and 14-Pin TSSOP  
Top View  
OUT A  
œIN A  
+IN A  
V+  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
OUT D  
œIN D  
+IN D  
Vœ  
+IN B  
œIN B  
OUT B  
+IN C  
œIN C  
OUT C  
8
Not to scale  
Pin Functions: OPA4202  
PIN  
I/O  
DESCRIPTION  
NAME  
–IN A  
+IN A  
–IN B  
+IN B  
–IN C  
+IN C  
–IN D  
+IN D  
OUT A  
OUT B  
OUT C  
OUT D  
V–  
NO.  
2
I
I
Inverting input channel A  
Noninverting input channel A  
Inverting input channel B  
Noninverting input channel B  
Inverting input channel C  
Noninverting input channel C  
Inverting input channel D  
Noninverting input channel D  
Output channel A  
3
6
I
5
I
9
I
10  
13  
12  
1
I
I
I
O
O
O
O
7
Output channel B  
8
Output channel C  
14  
11  
4
Output channel D  
Negative supply  
V+  
Positive supply  
6
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Product Folder Links: OPA202 OPA2202 OPA4202  
OPA202, OPA2202, OPA4202  
www.ti.com  
SBOS812H OCTOBER 2017REVISED MAY 2020  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
40  
UNIT  
V
Single-supply  
Dual-supply  
Supply voltage,  
VS = (V+) – (V–)  
±20  
Common-mode(2)  
Differential(3)  
(V–) – 0.5  
(V+) + 0.5  
±0.5  
Voltage  
Current  
Signal input pins  
±10  
mA  
Output short current(4)  
Continuous  
Operating temperature, TA  
Junction temperature, TJ  
Storage temperature, Tstg  
–40  
125  
125  
150  
°C  
–65  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that swing more than 0.5 V beyond the supply rails must be  
current-limited to 10 mA or less.  
(3) Input terminals are anti-parallel diode-clamped to each other. Input signals that cause differential voltages of swing more than ± 0.5 V  
must be current-limited to 10 mA or less.  
(4) Short-circuit to ground, one amplifier per package.  
6.2 ESD Ratings  
VALUE  
±2500  
±1000  
UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Charged device model (CDM), per JEDEC specification JESD22-C101(2)  
V(ESD)  
Electrostatic discharge  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.5  
NOM  
MAX  
36  
UNIT  
Single-supply  
Dual-supply  
VS  
TA  
Supply voltage, [ (V+) – (V–) ]  
Specified temperature  
V
±2.25  
–40  
±18  
105  
°C  
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OPA202, OPA2202, OPA4202  
SBOS812H OCTOBER 2017REVISED MAY 2020  
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6.4 Thermal Information: OPA202  
OPA202  
DGK (VSSOP)  
8 PINS  
190.8  
THERMAL METRIC(1)  
D (SOIC)  
8 PINS  
136  
DBV (SOT-23)  
5 PINS  
206.0  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
74  
82.3  
121.8  
62  
113.0  
65.9  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
19.7  
54.8  
N/A  
19.0  
39.0  
ΨJB  
111.2  
65.6  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.5 Thermal Information: OPA2202  
OPA2202  
THERMAL METRIC(1)  
DGK (VSSOP)  
8 PINS  
180.1  
D (SOIC)  
8 PINS  
121.5  
64.3  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
68.3  
101.4  
65  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
10.5  
18.2  
ΨJB  
99.8  
64.3  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
6.6 Thermal Information: OPA4202  
OPA4202  
THERMAL METRIC(1)  
D (SOIC)  
14 PINS  
87.9  
PW (TSSOP)  
14 PINS  
116.6  
39.5  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
42.7  
44.6  
61.4  
ΨJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
8.9  
3.6  
ΨJB  
44.1  
60.6  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
8
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Product Folder Links: OPA202 OPA2202 OPA4202  
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SBOS812H OCTOBER 2017REVISED MAY 2020  
6.7 Electrical Characteristics  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, and VOUT = VS / 2, RL = 10 kconnected to VS / 2 (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
OFFSET VOLTAGE  
VS = ±18 V  
VS = ±18 V, TA = –40°C to +105°C  
±20  
±200  
±250  
±1  
VOS  
Input offset voltage  
µV  
OPA202, OPA4202  
OPA2202  
TA = –40°C to +105°C  
TA = –40°C to +105°C  
±0.5  
±0.5  
±0.1  
µV/°C  
µV/°C  
dVOS/dT  
PSRR  
Input offset voltage drift  
±1.5  
±0.5  
±0.5  
VS = ±2.25 V to ±18 V  
Input offset voltage  
versus power supply  
µV/V  
VS = ±2.25 V to ±18 V, TA = –40°C to +105°C  
INPUT BIAS CURRENT  
±0.25  
±15  
±2  
±2.1  
IB  
Input bias current  
nA  
TA = –40°C to +105°C  
±150  
±700  
±250  
±700  
OPA202 (D, DBV)  
TA = –40°C to +105°C  
IOS  
Input offset current  
pA  
±25  
OPA202 (DGK),  
OPA2202, OPA4202  
TA = –40°C to +105°C  
NOISE  
0.2  
0.03  
9.5  
µVPP  
Input voltage noise  
f = 0.1 Hz to 10 Hz  
µVRMS  
f = 10 Hz  
f = 100 Hz  
f = 1 kHz  
f = 1 kHz  
Input voltage noise  
density  
en  
in  
9.1  
nV/Hz  
pA/Hz  
9
Input current noise  
0.076  
INPUT VOLTAGE RANGE  
Common-mode voltage  
range  
VCM  
(V–) + 1.5  
114  
(V+) – 1.5  
V
(V–) + 1.5 V < VCM < (V+) – 1.5 V  
131  
148  
VS = ±2.25 V  
VS = ±18 V  
(V–) + 1.5 V < VCM < (V+) – 1.5 V,  
TA = –40°C to +105°C  
114  
Common-mode rejection  
ratio  
CMRR  
dB  
(V–) + 1.5 V < VCM < (V+) – 1.5 V  
126  
(V–) + 1.5 V < VCM < (V+) – 1.5 V,  
TA = –40°C to +105°C  
119  
INPUT CAPACITANCE  
Differential  
10 || 3.3  
3 || 0.5  
M|| pF  
T|| pF  
Common-mode  
OPEN-LOOP GAIN  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 10 kΩ  
120  
119  
126  
126  
120  
119  
126  
126  
135  
150  
133  
150  
VS = ±2.25 V  
VS = ±18 V  
VS = ±2.25 V  
VS = ±18 V  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 10 k, TA = –40to +105℃  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 10 kΩ  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 10 k, TA = –40to +105℃  
AOL  
Open-loop voltage gain  
dB  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 2 kΩ  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 2 k, TA = –40to +105℃  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 2 kΩ  
(V–) + 1.25 V VO (V+) – 1.25 V,  
RL = 2 k, TA = –40to +105℃  
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SBOS812H OCTOBER 2017REVISED MAY 2020  
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Electrical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, and VOUT = VS / 2, RL = 10 kconnected to VS / 2 (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
FREQUENCY RESPONSE  
GBW  
SR  
Gain-bandwidth product  
1
0.35  
30  
MHz  
V/µs  
Slew rate  
10-V step, G = 1  
To 0.1%, 10-V step , G = 1  
To 0.01%, 10-V step , G = 1  
VIN × gain > VS  
tS  
Settling time  
µs  
µs  
32  
Overload recovery time  
4
Total harmonic distortion  
+ noise  
THD+N  
VO = 3 VRMS, G = 1, f = 1 kHz, RL = 10 kΩ  
0.0002%  
OUTPUT  
TA = 25°C, No Load  
650  
800  
750  
900  
1.15  
1
mV  
V
TA = 25°C, RL = 10 kΩ  
TA = 25°C, RL = 2 kΩ  
1.05  
Voltage output swing  
from rail  
VS = ±18 V  
TA = –40°C to +105°C, RL = 10 kΩ  
AOL > 120 dB, RL = 10 kΩ  
AOL > 120 dB, RL = 2 kΩ  
1.05  
1.25  
Sinking  
35  
35  
ISC  
Short-circuit current  
Capacitive load drive  
mA  
Sourcing  
CLOAD  
ZO  
Figure 28  
Open-loop output  
impedance  
IO = 0 mA, f = 1 MHz; see Figure 27  
50  
POWER SUPPLY  
IO = 0 mA  
580  
800  
900  
Quiescent current per  
amplifier  
IQ  
µA  
IO = 0 mA, TA = –40°C to +105°C  
10  
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SBOS812H OCTOBER 2017REVISED MAY 2020  
6.8 Typical Characteristics  
Table 1. Table of Graphs  
DESCRIPTION  
Offset Voltage Production Distribution  
Offset Voltage Drift Distribution From –40°C to +105°C  
Input Bias Current Production Distribution  
Input Offset Current Production Distribution  
Offset Voltage vs Temperature  
FIGURE  
Figure 1  
Figure 2  
Figure 3  
Figure 4  
Figure 5  
Offset Voltage vs Common-Mode Voltage  
Offset Voltage vs Supply Voltage  
Figure 6  
Figure 7  
Open-Loop Gain and Phase vs Frequency  
Closed-Loop Gain vs Frequency  
Figure 8  
Figure 9  
Input Bias Current vs Common-Mode Voltage  
Input Bias Current and Offset vs Temperature  
Output Voltage Swing vs Output Current  
Output Voltage Swing vs Output Current (Sourcing)  
Output Voltage Swing vs Output Current (Sinking)  
CMRR and PSRR vs Frequency  
Figure 10  
Figure 11  
Figure 12  
Figure 13  
Figure 14  
Figure 15  
Figure 16  
Figure 17  
Figure 18  
Figure 19  
Figure 20  
Figure 21  
Figure 22  
Figure 23  
Figure 24  
Figure 25, Figure 26  
Figure 27  
Figure 28  
Figure 29  
Figure 30  
Figure 31  
Figure 32, Figure 33  
Figure 34, Figure 35  
Figure 36  
Figure 37  
Figure 38  
Figure 39  
CMRR vs Temperature  
PSRR vs Temperature  
0.1-Hz to 10-Hz Voltage Noise  
Input Voltage Noise Spectral Density vs Frequency  
THD+N Ratio vs Frequency  
THD+N vs Output Amplitude  
Quiescent Current vs Supply Voltage  
Quiescent Current vs Temperature  
Open-Loop Gain vs Temperature (10-kΩ)  
Open-Loop Gain vs Output Voltage Swing to Supply  
Open-Loop Output Impedance vs Frequency  
Small-Signal Overshoot vs Capacitive Load (10-mV Step)  
No Phase Reversal  
Positive Overload Recovery  
Negative Overload Recovery  
Small-Signal Step Response (10-mV Step)  
Large-Signal Step Response (10-V Step)  
Settling Time (10-V Step)  
Short-Circuit Current vs Temperature  
Maximum Output Voltage vs Frequency  
EMIRR vs Frequency  
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6.9 Typical Characteristics  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
0
0
Input Offset Voltage Drift (µV/°C)  
σ = 177.41 nV/°C  
Input Offset Voltage (µV)  
C001  
C002  
µ = –18.23 nV/°C  
N = 252  
µ = –3.56 µV  
σ = 32.09 µV  
N = 252  
TA = –40°C to +105°C  
Figure 2. Offset Voltage Drift Distribution  
Figure 1. Offset Voltage Production Distribution  
35  
30  
25  
20  
15  
10  
5
20  
16  
12  
8
œIN Bias Current  
4
0
4
8
12  
16  
20  
+IN Bias Current  
0
Input Offset Current (pA)  
Input Bias Current (pA)  
C013  
C013  
µ = 0.112 pA  
σ = 15.023 pA  
N = 90  
µ–IN = 112.335 pA  
µ+IN = 112.448 pA  
σ–IN = 154.946 pA  
σ+IN = 152.739 pA  
N = 90  
Figure 4. Input Offset Current Production Distribution  
Figure 3. Input Bias Current Production Distribution  
400  
120  
300  
200  
80  
40  
100  
0
0
œ100  
œ200  
œ300  
œ400  
œ40  
œ80  
VCM = 16.5 V  
VCM = œ 16.5 V  
œ120  
0
25  
50  
75  
100 125 150  
0
5
10  
15  
20  
œ75 œ50 œ25  
œ20  
œ15  
œ10  
œ5  
Temperature (°C)  
Input Common-mode Voltage (V)  
C001  
C003  
5 typical units  
Figure 5. Offset Voltage vs Temperature  
5 typical units  
Figure 6. Offset Voltage vs Common-Mode Voltage  
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Typical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
150  
100  
50  
120  
100  
80  
180  
150  
120  
90  
Magnitude  
VS = 4.5 V  
60  
0
40  
60  
Phase  
œ50  
œ100  
œ150  
20  
30  
0
0
œ20  
-30  
10M  
0
9
18  
27  
36  
1
10  
100  
1k  
10k  
100k  
1M  
Supply Voltage (V)  
Frequency (Hz)  
C001  
C022  
5 typical units  
Figure 7. Offset Voltage vs Supply Voltage  
Figure 8. Open-Loop Gain and Phase vs Frequency  
25  
40  
20  
0
G = +1  
20  
15  
10  
5
G= -1  
G= +10  
0
œ5  
œ10  
œ15  
œ20  
œ25  
-20  
-40  
100  
1k  
10k  
100k  
1M  
10M  
0
5
10  
15  
20  
œ20  
œ15  
œ10  
œ5  
Frequency (Hz)  
Input Common-mode Voltage (V)  
C004  
C001  
Figure 9. Closed-Loop Gain vs Frequency  
Figure 10. Input Bias Current vs Common-Mode Voltage  
1.0  
0.8  
10V  
125°C  
25°C  
85°C  
-40°C  
0.5  
IBN  
0.3  
1V  
0.0  
IBP  
œ0.3  
œ0.5  
IOS  
100mV  
0
25  
50  
75  
100 125 150  
1
10  
100  
œ75 œ50 œ25  
Temperature (°C)  
Output Current (mA)  
C001  
C019  
Figure 11. Input Bias Current and Offset vs Temperature  
Figure 12. Output Voltage Swing vs Output Current  
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Typical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
18  
17.5  
17  
-14  
-14.5  
-15  
85°C  
125°C  
25°C  
œ40°C  
16.5  
16  
-15.5  
-16  
15.5  
15  
-16.5  
-17  
25°C  
40  
85°C  
125°C  
14.5  
14  
-17.5  
-18  
œ40°C  
0
5
10  
15  
20  
25  
30  
35  
45  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
Output Current (mA)  
Output Current (mA)  
C001  
C001  
Figure 13. Output Voltage Swing vs Output Current  
(Sourcing)  
Figure 14. Output Voltage Swing vs Output Current  
(Sinking)  
160  
0.01  
0.1  
1
160  
CMRR  
+PSRR  
œPSRR  
140  
120  
100  
80  
150  
140  
130  
120  
110  
100  
60  
40  
20  
0
10  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
0
25  
50  
75 100 125 150  
œ75 œ50 œ25  
Frequency (Hz)  
Temperature (°C)  
C004  
C001  
Figure 15. CMRR and PSRR vs Frequency  
Figure 16. CMRR vs Temperature  
160  
0.01  
150  
140  
130  
120  
0.1  
1
Time (1 s/div)  
0
25  
50  
75 100 125 150  
œ75 œ50 œ25  
Temperature (°C)  
C001  
C017  
Figure 17. PSRR vs Temperature  
Figure 18. 0.1-Hz to 10-Hz Voltage Noise  
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Typical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
1000  
100  
10  
1000  
100  
10  
1
-40  
G = -1, 2-kLoad  
G = -1, 600-Load  
G = -1, 10-kLoad  
G = +1, 2-kLoad  
G = +1, 600-Load  
G = +1, 10-kLoad  
0.1  
-60  
0.01  
-80  
0.001  
0.0001  
0.00001  
-100  
-120  
-140  
Voltage Noise  
Current Noise  
1
10m 100m  
1
1M  
1
10  
100  
Frequency (Hz)  
1k  
10k  
100k  
20  
200  
2k  
20k  
Frequency (Hz)  
C004  
VOUT = 3.5 VRMS  
BW = 90 kHz  
Figure 19. Input Voltage Noise and Current Noise Spectral  
Density vs Frequency  
Figure 20. THD+N Ratio vs Frequency  
700  
600  
500  
400  
300  
200  
100  
0
0.1  
-60  
0.01  
-80  
0.001  
-100  
-120  
-140  
VS = 4.5 V  
G = -1, 600-Load  
G = -1, 2-kLoad  
G = -1, 10-kLoad  
G = +1, 600-Load  
G = +1, 2-kLoad  
G = +1, 10-kLoad  
0.0001  
0.00001  
0.001  
0.01  
0.1  
1
10  
0
9
18  
27  
36  
Output Amplitude (VRMS  
)
Supply Voltage (V)  
C004  
C001  
f = 1 kHz  
BW = 90 kHz  
Figure 21. THD+N vs Output Amplitude  
Figure 22. Quiescent Current vs Supply Voltage  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
180  
0.001  
170  
160  
150  
140  
130  
120  
110  
100  
VS  
=
18 V  
0.01  
0.1  
1
VS  
=
18 V  
VS  
=
2.25 V  
VS  
=
2.25 V  
10  
0
25  
50  
75  
100 125 150  
0
25  
50  
75  
100 125 150  
œ75 œ50 œ25  
œ50 œ25  
Temperature (°C)  
Temperature (°C)  
C001  
C001  
Figure 23. Quiescent Current vs Temperature  
Figure 24. Open-Loop Gain vs Temperature  
(With 10-kΩ Load)  
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Typical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
140  
120  
100  
80  
140  
120  
100  
80  
60  
60  
40  
0
0.5  
1
1.5  
2
0
0.5  
1
1.5  
Output Voltage Swing from Rail (V)  
Output Voltage Swing from Rail (V)  
C001  
C001  
VS = ±18 V  
VS = ±2.25 V  
Figure 25. Open-Loop Gain vs Output Voltage  
Swing to Supply  
Figure 26. Open-Loop Gain vs Output Voltage Swing to  
Supply  
1k  
100  
10  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
G = -1, RISO = 0  
G = -1, RISO = 25  
G = -1, RISO = 50  
G = +1, RISO = 0  
G = +1, RISO = 25  
G = +1, RISO = 50  
0
1
10  
100  
1k  
10k 100k  
1M  
10M 100M  
25  
250  
Capacitive Load (pF)  
10-mV step  
2500  
25000  
Frequency (Hz)  
C021  
C004  
Unity-gain bandwidth = 1 MHz  
Figure 27. Open-Loop Output Impedance vs Frequency  
Figure 28. Small-Signal Overshoot vs Capacitive Load  
VOUT  
VIN  
Time (1 ms/div)  
Time (2 µs/div)  
C017  
C017  
Figure 29. No Phase Reversal  
Figure 30. Positive Overload Recovery  
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Typical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
VIN  
VOUT  
Input  
Output  
Time (25 µs/div)  
Time (2 µs/div)  
C017  
C017  
G = +1  
Figure 32. Small-Signal Step Response (10-mV Step)  
Figure 31. Negative Overload Recovery  
Output  
Input  
Input  
Output  
Time (25 µs/div)  
Time (10 µs/div)  
C017  
C017  
G = –1  
G = –1  
10-V step  
Figure 33. Small-Signal Step Response (10-mV Step)  
Figure 34. Large-Signal Step Response  
.01% Settling = ±1 mV  
Output  
Input  
Time (10 µs/div)  
Time (5 µs/div)  
C017  
C017  
G = +1  
10-V step  
10-V step  
Figure 35. Large-Signal Step Response  
Figure 36. Settling Time  
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Typical Characteristics (continued)  
at TA = 25°C, VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF (unless otherwise noted)  
50  
40  
Maximum output voltage without  
slew-rate induced distortion.  
Sinking  
35  
30  
25  
20  
15  
10  
5
40  
30  
20  
10  
0
VS  
=
18 V  
Sourcing  
VS  
=
2.25 V  
0
100  
1k  
10k  
100k  
1M  
0
25  
50  
75  
100  
125  
150  
œ75  
œ50  
œ25  
Frequency (Hz)  
Temperature (°C)  
C001  
C001  
Figure 37. Short-Circuit Current vs Temperature  
Figure 38. Maximum Output Voltage Amplitude vs  
Frequency  
100  
80  
60  
40  
20  
0
10M  
100M  
1000M  
Frequency (Hz)  
C004  
PRF = –10 dBm  
Figure 39. EMIRR vs Frequency  
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7 Detailed Description  
7.1 Overview  
The OPA202, OPA2202, and OPA4202 (OPAx202) family of devices is a series of low-power, super-beta, bipolar  
junction transistor (super-β BJT), input amplifiers that features superior drift performance and low input bias  
current. The low output impedance and heavy capacitive load drive abilities allow designers to interface to  
modern, fast-acquisition, precision analog-to-digital converters (ADCs) and buffer precision voltage references  
and drive power supply decoupling capacitors. The OPAx202 achieve a 1-MHz gain-bandwidth product and a  
0.35-V/μs slew rate, and consumes only 580 µA (typical) of quiescent current, making the devices a great choice  
for low-power applications. These devices operate on a single 4.5-V to 36-V supply, or dual ±2.25-V to ±18-V  
supplies.  
All versions are fully specified from –40°C to +105°C for use in the most challenging environments. The single-  
channel OPA202 is available in 8-pin SOIC, 8-pin VSSOP, and 5-pin SOT-23 packages. The dual-channel  
OPA2202 is available in an 8-pin VSSOP package. The quad-channel OPA4202 is available in 14-pin SOIC and  
TSSOP packages.  
The Functional Block Diagram shows the simplified diagram of the OPAx202.  
7.2 Functional Block Diagram  
V+  
gm1  
OUT  
+IN  
œIN  
Vœ  
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7.3 Feature Description  
7.3.1 Capacitive Load and Stability  
The dynamic characteristics of the OPAx202 are optimized for commonly encountered gains, loads, and  
operating conditions. The OPAx202 feature a patented output stage capable of driving large capacitive loads. In  
a unity-gain configuration, the series is capable of directly driving to 25 nF of pure capacitive load. Increase the  
gain to enhance the ability of the devices to drive greater capacitive loads. The particular op amp circuit  
configuration, layout, gain, and output loading are some of the factors to consider when establishing whether an  
amplifier is stable in operation.  
The combination of low closed-loop gain and high capacitive loads decreases the phase margin of the amplifier,  
and can lead to gain peaking or oscillations. As a result, heavier capacitive loads must be isolated from the  
output. Add a small resistor (ROUT equal to 50 Ω, for example) in series with the output to achieve isolation.  
Figure 40 shows the effects on small-signal overshoot for several capacitive loads and combinations of isolation  
resistance. See the Feedback Plots Define Op Amp AC Performance application bulletin for details of analysis  
techniques and application circuits, available for download from the www.TI.com. By using isolation resistors,  
driving capacitive loads of 100 nF and beyond is possible.  
50  
G = -1, RISO = 0  
45  
G = -1, RISO = 25  
40  
G = -1, RISO = 50  
35  
G = +1, RISO = 0  
G = +1, RISO = 25  
G = +1, RISO = 50  
30  
25  
20  
15  
10  
5
0
25  
250  
2500  
25000  
Capacitive Load (pF)  
C004  
Figure 40. Small-Signal Overshoot vs Capacitive Load (10-mV Output Step)  
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Feature Description (continued)  
For additional drive capability in unity-gain configurations, insert a small (10 Ω to 20 Ω) resistor (RISO) in series  
with the output to improve capacitive load drive, as shown in Figure 41. This resistor reduces ringing and  
maintains dc performance for purely capacitive loads. However, if a resistive load is in parallel with the capacitive  
load, then a voltage divider is created, which introduces a gain error at the output and reduces the output swing.  
The error is proportional to the ratio RISO / RL, and is generally negligible at low output levels. A high capacitive  
load drive makes the OPAx202 a great choice for applications such as reference buffers, MOSFET gate drives,  
and cable-shield drives. The circuit shown in Figure 41 uses an isolation resistor (RISO) to stabilize the output of  
an op amp. RISO modifies the open-loop gain of the system for increased phase margin. Table 2 lists the results  
using the OPAx202. For additional information on techniques to optimize and design using this circuit, TI  
Precision Design TIPD128 details complete design goals, simulation, and test results.  
+Vs  
Vout  
Riso  
+
Cload  
+
Vin  
-Vs  
œ
Figure 41. Extending Capacitive Load Drive With the OPAx202  
Table 2. OPAx202 Capacitive Load Drive Solution Using Isolation Resistor Measured Results  
MEASURED OVERSHOOT (%)  
PARAMETER  
INVERTING CONFIGURATION  
NONINVERTING CONFIGURATION  
CLOAD (pF)  
31  
RISO = 0 Ω  
RISO = 25 Ω  
6.6  
RISO = 50 Ω  
RISO = 0 Ω  
RISO = 25 Ω  
9
RISO = 50 Ω  
8.6  
6.7  
6.4  
6.7  
6.1  
6.4  
6.1  
8.1  
14.9  
21.8  
29.4  
37  
6.6  
6.7  
9.3  
8.9  
9.4  
8.9  
251  
6.4  
8.9  
421  
6.3  
6.6  
8.8  
8.8  
8.7  
641  
6.3  
6.5  
8.1  
8.8  
8.5  
1079  
1539  
2579  
3949  
6269  
10139  
15729  
25069  
6.1  
6.4  
8.6  
8.7  
9.8  
6.3  
6.1  
8.9  
10.3  
13.3  
16  
10.1  
12  
6.3  
6.9  
16  
7.9  
8.3  
25  
14.1  
14.5  
15.4  
14.5  
13.9  
10.8  
13.5  
15.2  
16.5  
9.9  
33.1  
40.2  
46.2  
52.6  
18.1  
19.1  
19.6  
19.2  
10.8  
11.6  
12.3  
For step-by-step design procedure, circuit schematics, bill of materials, printed circuit board (PCB) files, simulation results, and test results,  
see TIPD128, Capacitive Load Drive Solution Using an Isolation Resistor verified reference design.  
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7.3.2 Output Current Limit  
The output current of the OPAx202 is limited by internal circuitry to ±35 mA (sinking or sourcing) to protect the  
device if the output is accidentally shorted. This short-circuit current depends on temperature, as Figure 37  
shows.  
7.3.3 Noise Performance  
Figure 42 shows the total circuit noise for varying source impedances with the operational amplifier in a unity-  
gain configuration (with no feedback resistor network and therefore no additional noise contributions). The  
OPAx202 and OPA211 are shown with total circuit noise calculated. The op amp itself contributes a voltage  
noise component and a current noise component. The voltage noise is commonly modeled as a time-varying  
component of the offset voltage. The current noise is modeled as the time-varying component of the input bias  
current and reacts with the source resistance to create a voltage component of noise. Therefore, the lowest noise  
op amp for a given application depends on the source impedance. For low source impedance, current noise is  
negligible and voltage noise dominates. The OPAx202 have both low voltage noise and low current noise  
because of the super-beta bipolar junction transistor (super-β BJT) input of the op amp. As a result, the current  
noise contribution of the OPAx202 is negligible for most practical source impedances, which makes the series  
the better choice for applications with high source impedance.  
The equation in Figure 42 shows the calculation of the total circuit noise with these parameters:  
en = voltage noise  
In = current noise  
RS = source impedance  
k = Boltzmann's constant = 1.38 × 10–23 J/K  
T = temperature in kelvins (K)  
For more details on calculating noise, see Basic Noise Calculations.  
10µ  
OPA211  
1µ  
100n  
10n  
OPA202  
1n  
RS = 6 k  
Resistor Noise  
100 1k  
0.1n  
1
10  
10k  
100k  
1M  
10M  
Source Resistance, RS ()  
C003  
NOTE: For source resistances (RS) greater than 6 kΩ, the OPAx202 is a lower-noise option compared to the  
OPA211, as shown in Figure 42.  
Figure 42. Noise Performance of the OPAx202 vs the OPA211 in a Unity-Gain Buffer Configuration  
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7.3.4 Phase-Reversal Protection  
The OPAx202 family has internal phase-reversal protection. Many FET- and bipolar-input op amps exhibit a  
phase reversal when the input is driven beyond its linear common-mode range. This condition is most often  
encountered in noninverting circuits when the input is driven beyond the specified common-mode voltage range,  
causing the output to reverse into the opposite rail. The input circuitry of the OPAx202 prevents phase reversal  
with excessive common-mode voltage; instead, the output limits into the appropriate rail (see Figure 29).  
7.3.5 Thermal Protection  
The OPAx202 family of op amps is capable of driving 2-kΩ loads with power-supply voltages of up to ±18 V  
across the specified temperature range. In a single-supply configuration, where the load is connected to the  
negative supply voltage, the minimum load resistance is 1.1 kΩ at a supply voltage of 36 V. For lower supply  
voltages (either single-supply or symmetrical supplies), a lower load resistance may be used as long as the  
output current does not exceed 35 mA; otherwise, the device short-circuit current protection circuit may activate.  
Internal power dissipation increases when operating at high supply voltages. Copper leadframe construction  
used in the OPAx202 devices improves heat dissipation. Printed-circuit-board (PCB) layout helps reduce a  
possible increase in junction temperature. Wide copper traces help dissipate the heat by acting as an additional  
heat sink. An increase in temperature is further minimized by soldering the devices directly to the PCB rather  
than using a socket.  
Although the output current is limited by internal protection circuitry, accidental shorting of one or more output  
channels of a device can result in excessive heating. For instance, when an output is shorted to midsupply, the  
typical short-circuit current of 35 mA leads to an internal power dissipation of over 600 mW at a supply of ±18 V.  
To prevent excessive heating, the OPAx202 have an internal thermal shutdown circuit that shuts down the  
device if the die temperature exceeds approximately 135°C. When this thermal shutdown circuit activates, a built-  
in hysteresis of 10°C makes sure that the die temperature drops to approximately 125°C before the device  
switches on again. Additional consideration must be given to the combination of maximum operating voltage,  
maximum operating temperature, load, and package type.  
7.3.6 Electrical Overstress  
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.  
These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output  
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown  
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.  
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from  
accidental ESD events both before and during product assembly.  
It is helpful to have a good understanding of this basic ESD circuitry and the relevance to an electrical overstress  
event. See Figure 43 for an illustration of the ESD circuits contained in the OPAx202 (indicated by the dashed  
line area). The ESD protection circuitry involves several current-steering diodes connected from the input and  
output pins and routed back to the internal power-supply lines, where they meet at an absorption device internal  
to the operational amplifier. This protection circuitry is intended to remain inactive during normal circuit operation.  
An ESD event produces a short duration, high-voltage pulse that is transformed into a short duration, high-  
current pulse as the pulse discharges through a semiconductor device. The ESD protection circuits are designed  
to provide a current path around the operational amplifier core to protect the core from damage. The energy  
absorbed by the protection circuitry is then dissipated as heat.  
When an ESD voltage develops across two or more of the amplifier device pins, current flows through one or  
more of the steering diodes. Depending on the path that the current takes, the absorption device may activate.  
The absorption device has a trigger, or threshold voltage, that is above the normal operating voltage of the  
OPAx202 but below the device breakdown voltage level. Once this threshold is exceeded, the absorption device  
quickly activates and clamps the voltage across the supply rails to a safe level.  
When the operational amplifier connects into a circuit (such as the one Figure 43 shows), the ESD protection  
components are intended to remain inactive and not become involved in the application circuit operation.  
However, circumstances may arise where an applied voltage exceeds the operating voltage range of a given pin.  
If this condition occurs, there is a risk that some of the internal ESD protection circuits may be biased on and  
conduct current. Any such current flow occurs through steering diode paths and rarely involves the absorption  
device.  
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Figure 43 shows a specific example where the input voltage, VIN, exceeds the positive supply voltage (+VS) by  
500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If +VS can sink the  
current, one of the upper input steering diodes conducts and directs current to +VS. Excessively high current  
levels can flow with increasingly higher VIN. As a result, the data sheet specifications recommend that  
applications limit the input current to 10 mA.  
If the supply is not capable of sinking the current, VIN may begin sourcing current to the operational amplifier, and  
then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to  
levels that exceed the operational amplifier absolute maximum ratings.  
Another common question involves what happens to the amplifier if an input signal is applied to the input while  
the power supplies +VS or –VS are at 0 V.  
It depends on the supply characteristic while at 0 V, or at a level below the input signal amplitude. If the supplies  
appear as high impedance, then the operational amplifier supply current may be supplied by the input source  
through the current steering diodes. This state is not a normal bias condition; the amplifier most likely does not  
operate normally. If the supplies are low impedance, then the current through the steering diodes can become  
quite high. The current level depends on the ability of the input source to deliver current, and any resistance in  
the input path.  
If there is an uncertainty about the ability of the supply to absorb this current, external Zener diodes may be  
added to the supply pins as shown in Figure 43. The Zener voltage must be selected such that the diode does  
not turn on during normal operation.  
However, the Zener voltage must be low enough so that the Zener diode conducts if the supply pin rises above  
the safe operating supply voltage level.  
TVS(2)  
RF  
+VS  
V+  
RI  
100  
100 ꢀ  
ESD Current-  
Steering Diodes  
-IN  
OUT  
Op Amp  
Core  
(3)  
RS  
+IN  
Edge-Triggered ESD  
Absorption Circuit  
RL  
ID  
(1)  
VIN  
Vœ  
-VS  
TVS(2)  
Copyright © 2017, Texas Instruments Incorporated  
(1) VIN = +VS + 500 mV.  
(2) TVS: +VS(max) > VTVSBR (Min) > +VS  
(3) Suggested value is approximately 5 kΩ in overvoltage conditions.  
Figure 43. Equivalent Internal ESD Circuitry in a Typical Application Circuit  
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7.3.7 EMI Rejection  
The electromagnetic interference (EMI) rejection ratio, or EMIRR, describes the EMI immunity of operational  
amplifiers. An adverse effect that is common to many op amps is a change in the offset voltage as a result of RF  
signal rectification. An op amp that is more efficient at rejecting this change in offset as a result of EMI has a  
higher EMIRR and is quantified by a decibel value. Measuring EMIRR is performed in many ways, but this  
section provides the EMIRR IN+, which specifically describes the EMIRR performance when the RF signal is  
applied to the noninverting input pin of the op amp. In general, only the noninverting input is tested for EMIRR for  
the following three reasons:  
Op amp input pins are known to be the most sensitive to EMI, and typically rectify RF signals better than the  
supply or output pins.  
The noninverting and inverting op amp inputs have symmetrical physical layouts and exhibit matching EMIRR  
performance  
EMIRR is easier to measure on noninverting pins than on other pins because the noninverting input pin can  
be isolated on a PCB. This isolation allows the RF signal to be applied directly to the noninverting input pin  
with no complex interactions from other components or connecting PCB traces.  
High-frequency signals conducted or radiated to any pin of the operational amplifier may result in adverse  
effects, as the amplifier does not have sufficient loop gain to correct for signals with spectral content outside  
the bandwidth. Conducted or radiated EMI on inputs, power supply, or output may result in unexpected DC  
offsets, transient voltages, or other unknown behavior. Take care to properly shield and isolate sensitive  
analog nodes from noisy radio signals and digital clocks and interfaces. shows the effect of conducted EMI to  
the power supplies on the input offset voltage of OPAx202.  
The EMIRR IN+ of the OPAx202 is plotted versus frequency, as shown in Figure 44. If available, any dual  
and quad op-amp device versions have similar EMIRR IN+ performance. The OPAx202 unity-gain bandwidth  
is 1 MHz. EMIRR performance less than this frequency denotes interfering signals that fall within the op-amp  
bandwidth.  
See the EMI Rejection Ratio of Operational Amplifiers application report, available for download from  
www.ti.com.  
100  
80  
60  
40  
20  
0
10M  
100M  
Frequency (Hz)  
1000M  
C004  
Figure 44. OPAx202 EMIRR IN+  
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Table 3 lists the EMIRR IN+ values for the OPAx202 at particular frequencies commonly encountered in real-  
world applications. Table 3 lists applications that may be centered on or operated near the particular frequency  
shown. This information may be of special interest to designers working with these types of applications, or  
working in other fields likely to encounter RF interference from broad sources, such as the industrial, scientific,  
and medical (ISM) radio band.  
Table 3. OPAx202 EMIRR IN+ for Frequencies of Interest  
FREQUENCY  
APPLICATION OR ALLOCATION  
EMIRR IN+  
Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)  
applications  
400 MHz  
41 dB  
Global system for mobile communications (GSM) applications, radio communication, navigation,  
GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications  
900 MHz  
1.8 GHz  
2.4 GHz  
3.6 GHz  
5 GHz  
47 dB  
54 dB  
67 dB  
67 dB  
81 dB  
GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)  
802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and  
medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)  
Radiolocation, aero communication and navigation, satellite, mobile, S-band  
802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite  
operation, C-band (4 GHz to 8 GHz)  
7.3.8 EMIRR +IN Test Configuration  
Figure 45 shows the circuit configuration for testing the EMIRR IN+. An RF source is connected to the op amp  
noninverting input pin using a transmission line. The op amp is configured in a unity-gain buffer topology with the  
output connected to a low-pass filter (LPF) and a digital multimeter (DMM). A large impedance mismatch at the  
op amp input causes a voltage reflection; however, this effect is characterized and accounted for when  
determining the EMIRR IN+. The resulting DC offset voltage is sampled and measured by the multimeter. The  
LPF isolates the multimeter from residual RF signals that may interfere with multimeter accuracy.  
Ambient temperature: 25˘C  
+VS  
œ
50  
Low-Pass Filter  
+
RF source  
DC Bias: 0 V  
Modulation: None (CW)  
-VS  
Sample /  
Averaging  
Digital Multimeter  
Not shown: 0.1 µF and 10 µF  
supply decoupling  
Frequency Sweep: 201 pt. Log  
Figure 45. EMIRR +IN Test Configuration  
7.4 Device Functional Modes  
The OPAx202 have a single functional mode and are operational when the power-supply voltage is greater than  
4.5 V (±2.25 V). The maximum power supply voltage for the OPAx202 is 36 V (±18 V).  
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8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The OPA202, OPA2202, and OPA4202 (OPAx202) are unity-gain stable operational amplifiers with low noise,  
low input bias current, and low input offset voltage. Applications with noisy or high-impedance power supplies  
require decoupling capacitors placed close to the device pins. In most cases, 0.1-µF capacitors are adequate.  
Designers can use the low output impedance and heavy capacitive load drive abilities to interface to modern,  
fast-acquisition, precision analog-to-digital converters (ADCs) and buffer precision voltage references and drive  
power supply decoupling capacitors.  
8.1.1 Basic Noise Calculations  
Low-noise circuit design requires careful analysis of all noise sources. External noise sources dominates in many  
cases; consider the effect of source resistance on overall op amp noise performance. Total noise of the circuit is  
the root-sum-square combination of all noise components.  
The resistive portion of the source impedance produces thermal noise proportional to the square root of the  
resistance. Figure 42 shows this function. The source impedance is usually fixed; consequently, select the op  
amp and the feedback resistors to minimize the respective contributions to the total noise.  
Figure 46 shows noninverting (A) and inverting (B) op amp circuit configurations with gain. In circuit  
configurations with gain, the feedback network resistors contribute noise. Typically, the current noise of the op  
amp reacts with the feedback resistors to create additional noise components. However, the extremely low  
current noise of the OPAx202 means that the current noise contribution is neglected.  
The feedback resistor values are typically selected to make these noise sources negligible. Low impedance  
feedback resistors load the output of the amplifier. The equations for total noise are shown for both  
configurations.  
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Application Information (continued)  
(A) Noise in Noninverting Gain Configuration  
Noise at the output is given as EO, where  
R1  
R2  
2
42  
41 42  
2
2
2
2
¨
: ;  
1
:
;
:
;
:
;
>
?
84/5  
'
1
= l1 + p A5 + A0 + kA4 2 o + E0 45 + lE0 d  
hp  
æ4  
1
41  
41 + 42  
GND  
œ
EO  
8
: ;  
2
A = 4 G$ 6(-) 45  
d
h
¥
Thermal noise of RS  
+
5
*V  
¾
RS  
41 42  
8
: ;  
3
A4  
= ¨4 G$ 6(-) d  
2
h
d
h
Thermal noise of R1 || R2  
æ4  
1
41 + 42  
*V  
¾
+
,
h
VS  
Source  
GND  
G$ = 1.38065 10F23  
: ;  
4
d
œ
Boltzmann Constant  
-
Temperature in kelvins  
: ;  
>
?
-
5
6(-) = 237.15 + 6%)  
(B) Noise in Inverting Gain Configuration  
Noise at the output is given as EO, where  
R1  
R2  
2
:
;
42  
45 + 41 42  
'
1
= l1 +  
p A0 2 + kA4  
o2 + FE0 H  
+4 æ4  
5 2  
IG  
¨
: ;  
6
:
;
>
84/5  
?
1
45 + 41  
45 + 41 + 42  
RS  
œ
EO  
:
;
45 + 41 42  
8
+
: ;  
7
¨
4 G$ 6(-) H  
A4  
=
I
d
h
Thermal noise of (R1 + RS) || R2  
+4 æ4  
5
1
2
45 + 41 + 42  
*V  
¾
+
VS  
œ
,
GND  
G$ = 1.38065 10F23  
d
h
: ;  
8
Boltzmann Constant  
Source  
GND  
-
: ;  
9
>
?
6(-) = 237.15 + 6%)  
-
Temperature in kelvins  
Copyright © 2017, Texas Instruments Incorporated  
(1) eN = the voltage noise of the amplifier = 9 nV/Hz at 1 kHz.  
(2) iN = the current noise of the amplifier = 76 fA/Hz at 1 kHz.  
(3) For additional resources on noise calculations, visit TI's Precision Labs.  
Figure 46. Noise Calculation in Gain Configurations  
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8.2 Typical Application  
R4  
2.94 k  
C5  
1 nF  
œ
R1  
590 ꢀ  
R3  
499 ꢀ  
Output  
+
Input  
OPA202  
C2  
39 nF  
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Figure 47. 25-kHz, Low-Pass Filter  
8.2.1 Design Requirements  
Low-pass filters are used in signal processing applications to reduce noise and prevent aliasing. The OPAx202  
devices are is designed to construct high-speed, high-precision active filters. Figure 47 shows a second-order,  
low-pass filter commonly encountered in signal processing applications.  
Use the following parameters for this design example:  
Gain = 5 V/V (inverting gain)  
Low-pass cutoff frequency = 25 kHz  
Second-order Chebyshev filter response with 3-dB gain peaking in the passband  
8.2.2 Detailed Design Procedure  
The infinite-gain multiple-feedback circuit for a low-pass network function is shown in Figure 47. Use Equation 1  
to calculate the voltage transfer function.  
-1 R1R3C2C5  
Output  
s =  
( )  
s2 + s C 1 R +1 R +1 R +1 R R C C  
Input  
(
)
(
)
2
1
3
4
3 4 2 5  
(1)  
This circuit produces a signal inversion. For this circuit, the gain at DC and the low-pass cutoff frequency are  
calculated by Equation 2:  
R4  
Gain =  
R1  
1
fC =  
1 R R C C  
(
3 4 2 5  
)
2p  
(2)  
Software tools are readily available to simplify filter design. WEBENCH® Filter Designer is a simple, powerful,  
and easy-to-use active filter design program. The WEBENCH® Filter Designer lets you create optimized filter  
designs using a selection of TI operational amplifiers and passive components from TI's vendor partners.  
Available as a web based tool from the WEBENCH Design Center, WEBENCH Filter Designer allows you to  
design, optimize, and simulate complete multistage active filter solutions within minutes.  
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Typical Application (continued)  
8.2.3 Application Curve  
20  
0
-20  
-40  
-60  
100  
1k  
10k  
Frequency (Hz)  
100k  
1M  
Figure 48. OPAx202 Second-Order, 25-kHz, Chebyshev, Low-Pass Filter  
9 Power Supply Recommendations  
The OPAx202 are specified for operation from 4.5 V to 36 V (±2.25 V to ±18 V); many specifications apply from  
–40°C to +105°C. Parameters that can exhibit significant variance with regard to operating voltage or  
temperature are shown in the Typical Characteristics.  
CAUTION  
Supply voltages greater than 40 V can permanently damage the device; see the  
Absolute Maximum Ratings.  
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-  
impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout  
section.  
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10 Layout  
10.1 Layout Guidelines  
For best operational performance of the device, use good PCB layout practices, including:  
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the op amp  
itself. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power  
sources local to the analog circuitry.  
Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as  
close as possible to the device. A single bypass capacitor from V+ to ground is applicable for single-  
supply applications.  
Separate grounding for analog and digital portions of circuitry is one of the simplest and most effective  
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground  
planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically  
separate digital and analog grounds paying attention to the flow of the ground current. For more detailed  
information, see The PCB is a component of op amp design.  
To reduce parasitic coupling, run the input traces as far away as possible from the supply or output  
traces. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much better  
as opposed to in parallel with the noisy trace.  
Place the external components as close as possible to the device. As shown in Figure 49, keeping RF  
and RG close to the inverting input minimizes parasitic capacitance.  
Keep the length of input traces as short as possible. Always remember that the input traces are the most  
sensitive part of the circuit.  
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly  
reduce leakage currents from nearby traces that are at different potentials.  
For best performance, TI recommends cleaning the PCB following board assembly.  
Any precision integrated circuit may experience performance shifts due to moisture ingress into the  
plastic package. Following any aqueous PCB cleaning process, TI recommends baking the PCB  
assembly to remove moisture introduced into the device packaging during the cleaning process. A low  
temperature, post cleaning bake at 85°C for 30 minutes is sufficient for most circumstances.  
10.2 Layout Example  
Place bypass  
capacitors as close to  
device as possible  
(avoid use of vias)  
Use ground pours for  
shielding the input  
signal pairs  
GND  
C3  
C4  
+V  
R3  
C3  
C4  
R3  
INœ  
+V  
1
NC  
œIN  
+IN  
Vœ  
NC  
V+  
8
7
6
5
1
2
3
4
NC  
œIN  
+IN  
Vœ  
NC  
V+  
8
7
6
5
R1  
R2  
R1  
2
3
4
INœ  
œ
OUT  
IN+  
OUT  
NC  
OUT  
OUT  
NC  
+
R2  
-V  
C1  
C2  
IN+  
R4  
GND  
R4  
-V  
Place components  
C1  
C2  
Use a low-  
ESR,ceramic bypass  
capacitor  
close to device and to  
each other to reduce  
parasitic errors  
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Figure 49. Operational Amplifier Board Layout for Difference Amplifier Configuration  
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11 Device and Documentation Support  
11.1 Device Support  
11.1.1 Development Support  
11.1.1.1 TINA-TI™ (Free Software Download)  
TINA™ is a simple, powerful, and easy-to-use circuit simulation program based on a SPICE engine. TINA-TI is a  
free, fully functional version of the TINA software, preloaded with a library of macro models in addition to a range  
of both passive and active models. TINA-TI provides all the conventional dc, transient, and frequency domain  
analysis of SPICE, as well as additional design capabilities.  
Available as a free download from the Analog eLab Design Center, TINA-TI offers extensive post-processing  
capability that allows users to format results in a variety of ways. Virtual instruments offer the ability to select  
input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic quick-start tool.  
NOTE  
These files require that either the TINA software (from DesignSoft™) or TINA-TI software  
be installed. Download the free TINA-TI software from the TINA-TI folder.  
11.1.1.2 WEBENCH Filter Designer Tool  
WEBENCH® Filter Designer is a simple, powerful, and easy-to-use active filter design program. The WEBENCH  
Filter Designer lets you create optimized filter designs using a selection of TI operational amplifiers and passive  
components from TI's vendor partners.  
11.1.1.3 TI Precision Designs  
TI Precision Designs are available online at http://www.ti.com/ww/en/analog/precision-designs/. TI Precision  
Designs are analog solutions created by TI’s precision analog applications experts and offer the theory of  
operation, component selection, simulation, complete PCB schematic and layout, bill of materials, and measured  
performance of many useful circuits.  
11.2 Documentation Support  
11.2.1 Related Documentation  
For related documentation see the following:  
Texas Instruments, The PCB is a component of op amp design  
Texas Instruments, Compensate Transimpedance Amplifiers Intuitively  
Texas Instruments, Operational amplifier gain stability, Part 3: AC gain-error analysis  
Texas Instruments, Operational amplifier gain stability, Part 2: DC gain-error analysis  
Texas Instruments, Using infinite-gain, MFB filter topology in fully differential active filters  
Texas Instruments, Op Amp Performance Analysis  
Texas Instruments, Single-Supply Operation of Operational Amplifiers  
Texas Instruments, Tuning in Amplifiers  
Texas Instruments, Shelf-Life Evaluation of Lead-Free Component Finishes  
Texas Instruments, Feedback Plots Define Op Amp AC Performance  
Texas Instruments, EMI Rejection Ratio of Operational Amplifiers  
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11.3 Related Links  
Table 4 lists quick access links. Categories include technical documents, support and community resources,  
tools and software, and quick access to order now.  
Table 4. Related Links  
TECHNICAL  
DOCUMENTS  
TOOLS &  
SOFTWARE  
SUPPORT &  
COMMUNITY  
PARTS  
PRODUCT FOLDER  
ORDER NOW  
OPA202  
OPA2202  
OPA4202  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
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11.4 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper  
right corner, click on Alert me to register and receive a weekly digest of any product information that has  
changed. For change details, review the revision history included in any revised document.  
11.5 Support Resources  
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
11.6 Trademarks  
E2E is a trademark of Texas Instruments.  
TINA-TI is a trademark of Texas Instruments, Inc and DesignSoft, Inc.  
WEBENCH is a registered trademark of Texas Instruments.  
Bluetooth is a registered trademark of Bluetooth SIG, Inc.  
TINA, DesignSoft are trademarks of DesignSoft, Inc.  
All other trademarks are the property of their respective owners.  
11.7 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
11.8 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2017–2020, Texas Instruments Incorporated  
Submit Documentation Feedback  
33  
Product Folder Links: OPA202 OPA2202 OPA4202  
 
PACKAGE OPTION ADDENDUM  
www.ti.com  
30-Oct-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
OPA202ID  
OPA202IDBVR  
OPA202IDBVT  
OPA202IDGKR  
OPA202IDGKT  
OPA202IDR  
ACTIVE  
SOIC  
SOT-23  
SOT-23  
VSSOP  
VSSOP  
SOIC  
D
8
5
75  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 120  
-40 to 120  
-40 to 120  
-40 to 105  
-40 to 105  
-40 to 120  
-40 to 150  
-40 to 120  
-40 to 120  
-40 to 150  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
OPA202  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DBV  
DBV  
DGK  
DGK  
D
3000  
250  
2500  
250  
2500  
75  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
NIPDAU  
1T72  
5
Green (RoHS  
& no Sb/Br)  
1T72  
8
Green (RoHS  
& no Sb/Br)  
NIPDAUAG  
NIPDAUAG  
NIPDAU  
1T2Q  
8
Green (RoHS  
& no Sb/Br)  
1T2Q  
8
Green (RoHS  
& no Sb/Br)  
OPA202  
OP2202  
1XDQ  
OPA2202ID  
SOIC  
D
8
Green (RoHS  
& no Sb/Br)  
NIPDAU  
OPA2202IDGKR  
OPA2202IDGKT  
OPA2202IDR  
OPA4202ID  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
D
8
2500  
250  
2500  
50  
Green (RoHS  
& no Sb/Br)  
NIPDAUAG  
NIPDAUAG  
NIPDAU  
8
Green (RoHS  
& no Sb/Br)  
1XDQ  
8
Green (RoHS  
& no Sb/Br)  
OP2202  
OPA4202  
OPA4202  
OPA4202  
OPA4202  
SOIC  
D
14  
14  
14  
14  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
OPA4202IDR  
OPA4202IPW  
OPA4202IPWR  
SOIC  
D
2500  
90  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
TSSOP  
TSSOP  
PW  
PW  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
2000  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
30-Oct-2020  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
1-Nov-2020  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
OPA202IDBVR  
OPA202IDBVT  
OPA202IDGKR  
OPA202IDGKT  
OPA202IDR  
SOT-23  
SOT-23  
VSSOP  
VSSOP  
SOIC  
DBV  
DBV  
DGK  
DGK  
D
5
5
3000  
250  
180.0  
180.0  
330.0  
330.0  
330.0  
330.0  
330.0  
330.0  
330.0  
330.0  
8.4  
3.23  
3.23  
5.3  
5.3  
6.4  
5.3  
5.3  
6.4  
6.5  
6.9  
3.17  
3.17  
3.4  
3.4  
5.2  
3.4  
3.4  
5.2  
9.0  
5.6  
1.37  
1.37  
1.4  
1.4  
2.1  
1.4  
1.4  
2.1  
2.1  
1.6  
4.0  
4.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
Q3  
Q3  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
8.4  
8.0  
8
2500  
250  
12.4  
12.4  
12.4  
12.4  
12.4  
12.4  
16.4  
12.4  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
16.0  
12.0  
8
8
2500  
2500  
250  
OPA2202IDGKR  
OPA2202IDGKT  
OPA2202IDR  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
D
8
8
8
2500  
2500  
2000  
OPA4202IDR  
SOIC  
D
14  
14  
OPA4202IPWR  
TSSOP  
PW  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
1-Nov-2020  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
OPA202IDBVR  
OPA202IDBVT  
OPA202IDGKR  
OPA202IDGKT  
OPA202IDR  
SOT-23  
SOT-23  
VSSOP  
VSSOP  
SOIC  
DBV  
DBV  
DGK  
DGK  
D
5
5
3000  
250  
213.0  
213.0  
366.0  
366.0  
853.0  
366.0  
366.0  
367.0  
367.0  
853.0  
191.0  
191.0  
364.0  
364.0  
449.0  
364.0  
364.0  
367.0  
367.0  
449.0  
35.0  
35.0  
50.0  
50.0  
35.0  
50.0  
50.0  
35.0  
38.0  
35.0  
8
2500  
250  
8
8
2500  
2500  
250  
OPA2202IDGKR  
OPA2202IDGKT  
OPA2202IDR  
VSSOP  
VSSOP  
SOIC  
DGK  
DGK  
D
8
8
8
2500  
2500  
2000  
OPA4202IDR  
SOIC  
D
14  
14  
OPA4202IPWR  
TSSOP  
PW  
Pack Materials-Page 2  
PACKAGE OUTLINE  
DBV0005A  
SOT-23 - 1.45 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
3.0  
2.6  
0.1 C  
1.75  
1.45  
1.45  
0.90  
B
A
PIN 1  
INDEX AREA  
1
2
5
2X 0.95  
1.9  
3.05  
2.75  
1.9  
4
3
0.5  
5X  
0.3  
0.15  
0.00  
(1.1)  
TYP  
0.2  
C A B  
0.25  
GAGE PLANE  
0.22  
0.08  
TYP  
8
0
TYP  
0.6  
0.3  
TYP  
SEATING PLANE  
4214839/E 09/2019  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Refernce JEDEC MO-178.  
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X (0.95)  
4
(R0.05) TYP  
(2.6)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214839/E 09/2019  
NOTES: (continued)  
5. Publication IPC-7351 may have alternate designs.  
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X(0.95)  
4
(R0.05) TYP  
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4214839/E 09/2019  
NOTES: (continued)  
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
8. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you  
permission to use these resources only for development of an application that uses the TI products described in the resource. Other  
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third  
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,  
damages, costs, losses, and liabilities arising out of your use of these resources.  
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on  
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable  
warranties or warranty disclaimers for TI products.  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2020, Texas Instruments Incorporated  

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