OPA2992 [TI]

OPAx992 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp;
OPA2992
型号: OPA2992
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

OPAx992 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

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OPA992, OPA2992, OPA4992  
SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
OPAx992 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp  
1 Features  
3 Description  
Low offset voltage: ±210 µV  
The OPAx992 family (OPA992, OPA2992, and  
OPA4992) is a family of high voltage (40 V) general  
purpose operational amplifiers. These devices offer  
excellent DC precision and AC performance, including  
rail-to-rail input/output, low offset (±210 µV, typ), low  
offset drift (±0.25 µV/°C, typ) and low noise (7 nV/√Hz  
at 1 kHz, 4.4 nV/√Hz at 10 kHz).  
Low offset voltage drift: ±0.25 µV/°C  
Low noise: 7 nV/√Hz at 1 kHz, 4.4 nV/√Hz  
broadband  
High common-mode rejection: 115 dB  
Low bias current: ±10 pA  
Rail-to-rail input and output  
MUX-friendly/comparator inputs  
– Amplifier operates with differential inputs up to  
supply rail  
– Amplifier can be used in open-loop or as  
comparator  
Wide bandwidth: 10.6-MHz GBW, unity-gain stable  
High slew rate: 32 V/µs  
Low quiescent current: 2.4 mA per amplifier  
Wide supply: ±1.35 V to ±20 V, 2.7 V to 40 V  
Robust EMIRR performance  
Features such as differential and common-mode input  
voltage ranges to the supply rails, high short-circuit  
current (±65 mA), and high slew rate (32 V/µs) make  
the OPAx992 a flexible, robust, and high-performance  
op amp for high-voltage industrial applications.  
The OPAx992 family of op amps is available in micro-  
size packages (such as WSON), as well as standard  
packages (such as SOT-23, SOIC, and TSSOP), and  
is specified from –40°C to 125°C.  
Device Information  
2 Applications  
PART NUMBER(1)  
PACKAGE  
BODY SIZE (NOM)  
2.90 mm × 1.60 mm  
2.90 mm × 1.60 mm  
2.00 mm × 1.25 mm  
4.90 mm × 3.90 mm  
2.90 mm × 1.60 mm  
3.00 mm × 4.40 mm  
3.00 mm × 3.00 mm  
2.00 mm × 2.00 mm  
8.65 mm × 3.90 mm  
5.00 mm × 4.40 mm  
Multiplexed data-acquisition systems  
Test and measurement equipment  
Motor drive: power stage and control modules  
Power delivery: UPS, server, and merchant  
network power  
ADC driver and reference buffer amplifier  
Programmable logic controllers  
Analog input and output modules  
High-side and low-side current sensing  
High precision comparator  
SOT-23 (5)  
OPA992  
SOT-23 (6)  
SC70 (5)  
SOIC (8)  
SOT-23 (8)  
TSSOP (8)  
VSSOP (8)  
WSON (8)  
SOIC (14)  
TSSOP (14)  
OPA2992  
OPA4992  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
OPAx992  
+
+
Vshunt Rshunt  
+
System  
Load  
-
MCU  
Vo  
-
-
Iload  
GND  
+
+
Vbus  
Vbus  
Iload  
GND  
+
System  
Load  
OPAx992  
+
MCU  
+
Vshunt  
Rshunt  
-
-
Vo  
-
GND  
GND  
GND  
GND  
Low-Side Current Sense  
High-Side Current Sense  
OPAx992 in Current-Sensing Applications  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
OPA992, OPA2992, OPA4992  
SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
www.ti.com  
Table of Contents  
1 Features............................................................................1  
2 Applications.....................................................................1  
3 Description.......................................................................1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 6  
6.1 Absolute Maximum Ratings........................................ 6  
6.2 ESD Ratings............................................................... 6  
6.3 Recommended Operating Conditions.........................6  
6.4 Thermal Information for Single Channel..................... 6  
6.5 Thermal Information for Dual Channel........................7  
6.6 Thermal Information for Quad Channel...................... 7  
6.7 Electrical Characteristics.............................................8  
6.8 Typical Characteristics.............................................. 11  
7 Detailed Description......................................................19  
7.1 Overview...................................................................19  
7.2 Functional Block Diagram.........................................19  
7.3 Feature Description...................................................20  
7.4 Device Functional Modes..........................................29  
8 Application and Implementation..................................30  
8.1 Application Information............................................. 30  
8.2 Typical Applications.................................................. 30  
9 Power Supply Recommendations................................33  
10 Layout...........................................................................33  
10.1 Layout Guidelines................................................... 33  
10.2 Layout Example...................................................... 34  
11 Device and Documentation Support..........................35  
11.1 Device Support........................................................35  
11.2 Documentation Support.......................................... 35  
11.3 Receiving Notification of Documentation Updates..35  
11.4 Support Resources................................................. 35  
11.5 Trademarks............................................................. 35  
11.6 Electrostatic Discharge Caution..............................35  
11.7 Glossary..................................................................36  
12 Mechanical, Packaging, and Orderable  
Information.................................................................... 36  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision A (October 2021) to Revision B (December 2021)  
Page  
Added PSRR specification for OPA4992 release in Electrical Characteristics section.......................................8  
Added clarification to VS = 2.7 V to 40 V PSRR specification noting that specification is for all channel  
variants............................................................................................................................................................... 8  
Corrected typo in Shutdown of Feature Description section from "...specified 10-kΩ load to midsupply (VS /  
2)" to "...specified 10-kΩ load to V-"..................................................................................................................28  
Changes from Revision * (June 2021) to Revision A (October 2021)  
Page  
Changed the device status from Advance Information to Production Data ....................................................... 1  
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OPA992, OPA2992, OPA4992  
SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
www.ti.com  
5 Pin Configuration and Functions  
OUT  
Vœ  
1
2
3
5
V+  
IN+  
Vœ  
1
2
3
5
V+  
IN+  
4
INœ  
INœ  
4
OUT  
Not to scale  
Not to scale  
Figure 5-1. OPA992 DBV Package  
5-Pin SOT-23  
Figure 5-2. OPA992 DCK Package  
5-Pin SC70  
(Top View)  
(Top View)  
Table 5-1. Pin Functions: OPA992  
PIN  
I/O  
DESCRIPTION  
NAME  
SOT-23  
SC70  
IN+  
IN–  
3
4
1
5
2
1
3
4
5
2
I
Noninverting input  
I
Inverting input  
OUT  
V+  
O
Output  
Positive (highest) power supply  
Negative (lowest) power supply  
V–  
OUT  
V–  
1
6
5
4
V+  
2
3
SHDN  
–IN  
+IN  
Not to scale  
Figure 5-3. OPA992S DBV Package  
6-Pin SOT-23  
(Top View)  
Table 5-2. Pin Functions: OPA992S  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
+IN  
3
4
1
5
6
2
I
I
Noninverting input  
–IN  
Inverting input  
OUT  
SHDN  
V+  
O
I
Output  
Shutdown: low = amplifier enabled, high = amplifier disabled  
Positive (highest) power supply  
Negative (lowest) power supply  
V–  
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OUT1  
IN1œ  
IN1+  
Vœ  
1
2
3
4
8
7
6
5
V+  
OUT1  
IN1œ  
IN1+  
Vœ  
1
2
3
4
8
7
6
5
V+  
OUT2  
IN2œ  
IN2+  
OUT2  
IN2œ  
IN2+  
Thermal  
Pad  
Not to scale  
Not to scale  
Figure 5-4. OPA2992 D, DDF, PW, and DGK  
Package  
8-Pin SOIC, SOT-23, TSSOP, and VSSOP  
(Top View)  
A. Connect thermal pad to V–. See Section 7.3.10 for more  
information.  
Figure 5-5. OPA2992 DSG Package(A)  
8-Pin WSON With Exposed Thermal Pad  
(Top View)  
Table 5-3. Pin Functions: OPA2992  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
3
IN1+  
IN1–  
IN2+  
IN2–  
OUT1  
OUT2  
V+  
I
I
Noninverting input, channel 1  
2
Inverting input, channel 1  
Noninverting input, channel 2  
Inverting input, channel 2  
Output, channel 1  
5
I
6
I
1
O
O
7
Output, channel 2  
8
Positive (highest) power supply  
Negative (lowest) power supply  
V–  
4
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OUT1  
IN1œ  
IN1+  
V+  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
OUT4  
IN4œ  
IN4+  
Vœ  
IN2+  
IN2œ  
OUT2  
IN3+  
IN3œ  
OUT3  
8
Not to scale  
Figure 5-6. OPA4992 D and PW Package  
14-Pin SOIC and TSSOP  
(Top View)  
Table 5-4. Pin Functions: OPA4992  
PIN  
I/O  
DESCRIPTION  
NAME  
IN1+  
NO.  
3
I
I
Noninverting input, channel 1  
Inverting input, channel 1  
Noninverting input, channel 2  
Inverting input, channel 2  
Noninverting input, channel 3  
Inverting input, channel 3  
Noninverting input, channel 4  
Inverting input, channel 4  
Output, channel 1  
IN1–  
2
IN2+  
5
I
IN2–  
6
I
IN3+  
10  
9
I
IN3–  
I
IN4+  
12  
13  
1
I
IN4–  
I
OUT1  
OUT2  
OUT3  
OUT4  
V+  
O
O
O
O
7
Output, channel 2  
8
Output, channel 3  
14  
4
Output, channel 4  
Positive (highest) power supply  
Negative (lowest) power supply  
V–  
11  
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SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating ambient temperature range (unless otherwise noted)(1)  
MIN  
0
MAX  
42  
UNIT  
V
Supply voltage, VS = (V+) – (V–)  
Common-mode voltage(3)  
(V–) – 0.5  
(V+) + 0.5  
VS + 0.2  
10  
V
Signal input pins  
Differential voltage(3)  
Current(3)  
V
–10  
V–  
mA  
V
Shutdown pin voltage(4)  
(V–) + 20  
Output short-circuit(2)  
Continuous  
Operating ambient temperature, TA  
Junction temperature, TJ  
Storage temperature, Tstg  
–55  
–65  
150  
150  
150  
°C  
°C  
°C  
(1) Operating the device beyond the ratings listed under Absolute Maximum Ratings will cause permanent damage to the device.  
These are stress ratings only, based on process and design limitations, and this device has not been designed to function outside  
the conditions indicated under Recommended Operating Conditions. Exposure to any condition outside Recommended Operating  
Conditions for extended periods, including absolute-maximum-rated conditions, may affect device reliability and performance.  
(2) Short-circuit to ground, one amplifier per package. Extended short-circuit current, especially with higher supply voltage, can cause  
excessive heating and eventual destruction.  
(3) Input pins are diode-clamped to the power-supply rails. Input signals that may swing more than 0.5 V beyond the supply rails must be  
current limited to 10 mA or less.  
(4) Cannot exceed V+.  
6.2 ESD Ratings  
VALUE  
±2500  
±1500  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)  
V(ESD)  
Electrostatic discharge  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
over operating ambient temperature range (unless otherwise noted)  
MIN  
2.7  
MAX  
UNIT  
VS  
VI  
Supply voltage, (V+) – (V–)  
40  
(V+)  
V
V
Common mode voltage range  
(V–)  
1.1  
VIH  
VIL  
TA  
High level input voltage at shutdown pin (amplifier disabled)  
Low level input voltage at shutdown pin (amplifier enabled)  
Specified temperature  
(V–) + 20 (1)  
0.2  
V
(V–)  
–40  
V
125  
°C  
(1) Cannot exceed V+.  
6.4 Thermal Information for Single Channel  
OPA992, OPA992S  
DBV  
(SOT-23)  
DCK  
(SC70)  
THERMAL METRIC(1)  
UNIT  
5 PINS  
185.4  
83.9  
6 PINS  
166.9  
83.9  
5 PINS  
198.1  
94.1  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
52.5  
47.1  
45.3  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
25.4  
25.9  
16.9  
ψJB  
52.1  
47.0  
45.0  
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6.4 Thermal Information for Single Channel (continued)  
OPA992, OPA992S  
DBV  
(SOT-23)  
DCK  
(SC70)  
THERMAL METRIC(1)  
UNIT  
5 PINS  
N/A  
6 PINS  
5 PINS  
RθJC(bot)  
Junction-to-case (bottom) thermal resistance  
N/A  
N/A  
°C/W  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
6.5 Thermal Information for Dual Channel  
OPA2992  
D
DDF  
(SOT-23)  
DGK  
(VSSOP)  
DSG  
(WSON)  
PW  
(TSSOP)  
THERMAL METRIC(1)  
Unit  
(SOIC)  
8 PINS  
8 PINS  
8 PINS  
8 PINS  
8 PINS  
Junction-to-ambient thermal  
resistance  
RθJA  
131.0  
149.6  
174.2  
74.8  
183.4  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction-to-case (top) thermal  
resistance  
RθJC(top)  
RθJB  
73.0  
74.5  
25.0  
73.8  
N/A  
85.3  
68.6  
7.9  
65.9  
95.9  
11.0  
94.4  
N/A  
93.6  
42.1  
3.8  
72.4  
114.0  
12.1  
112.3  
N/A  
Junction-to-board thermal  
resistance  
Junction-to-top characterization  
parameter  
ψJT  
Junction-to-board  
characterization parameter  
ψJB  
68.4  
N/A  
41.9  
17.0  
Junction-to-case (bottom) thermal  
resistance  
RθJC(bot)  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
6.6 Thermal Information for Quad Channel  
OPA4992  
D
PW  
(TSSOP)  
THERMAL METRIC(1)  
UNIT  
(SOIC)  
14 PINS  
99.0  
14 PINS  
118.8  
47.0  
RθJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
55.1  
54.8  
61.9  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
16.7  
5.5  
ψJB  
54.4  
61.3  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
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6.7 Electrical Characteristics  
For VS = (V+) – (V–) = 2.7 V to 40 V (±1.35 V to ±20 V) at TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT  
= VS / 2, unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
OFFSET VOLTAGE  
±0.21  
±1  
VOS  
Input offset voltage  
VCM = V–  
VCM = V–  
mV  
TA = –40°C to 125°C  
±1.2  
dVOS/dT  
Input offset voltage drift  
TA = –40°C to 125°C  
±0.25  
±0.2  
µV/  
OPA992, OPA2992, VCM  
V–, VS = 5 V to 40 V  
=
±1.3  
±1.8  
OPA4992, VCM = V–, VS = 5  
V to 40 V  
Input offset voltage versus  
power supply  
±0.4  
PSRR  
TA = –40°C to 125°C  
μV/V  
µV/V  
OPA992, OPA2992,  
OPA4992, VCM = V–, VS  
=
±0.8  
0.4  
±7  
2.7 V to 40 V(1)  
DC channel separation  
INPUT BIAS CURRENT  
IB  
Input bias current  
±10  
±10  
pA  
pA  
IOS  
Input offset current  
NOISE  
2.77  
0.49  
7
μVPP  
EN  
Input voltage noise  
f = 0.1 Hz to 10 Hz  
µVRMS  
f = 1 kHz  
eN  
iN  
Input voltage noise density  
nV/√Hz  
fA/√Hz  
f = 10 kHz  
4.4  
60  
Input current noise density f = 1 kHz  
INPUT VOLTAGE RANGE  
Common-mode voltage  
range  
VCM  
(V–)  
100  
75  
(V+)  
V
VS = 40 V, V– < VCM < (V+) –  
2 V (PMOS pair)  
115  
98  
VS = 5 V, V– < VCM < (V+) – 2  
V (PMOS pair)(1)  
Common-mode rejection  
ratio  
VS = 2.7 V, V– < VCM < (V+) –  
2 V (PMOS pair)  
CMRR  
TA = –40°C to 125°C  
90  
dB  
VS = 2.7 – 40 V, (V+) – 1 V <  
VCM < V+ (NMOS pair)  
90  
See Offset Voltage vs Common-Mode  
Voltage (Transition Region)  
(V+) – 2 V < VCM < (V+) – 1 V  
INPUT IMPEDANCE  
ZID  
Differential  
Common-mode  
100 || 9  
6 || 1  
MΩ || pF  
TΩ || pF  
ZICM  
OPEN-LOOP GAIN  
VS = 40 V, VCM = VS / 2,  
(V–) + 0.1 V < VO < (V+) –  
0.1 V  
120  
104  
90  
142  
142  
125  
125  
105  
105  
TA = –40°C to 125°C  
TA = –40°C to 125°C  
TA = –40°C to 125°C  
VS = 5 V, VCM = VS / 2,  
(V–) + 0.1 V < VO < (V+) –  
0.1 V(1)  
AOL  
Open-loop voltage gain  
dB  
VS = 2.7 V, VCM = VS / 2,  
(V–) + 0.1 V < VO < (V+) –  
0.1 V(1)  
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6.7 Electrical Characteristics (continued)  
For VS = (V+) – (V–) = 2.7 V to 40 V (±1.35 V to ±20 V) at TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT  
= VS / 2, unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
FREQUENCY RESPONSE  
GBW  
SR  
Gain-bandwidth product  
10.6  
32  
MHz  
V/μs  
Slew rate  
VS = 40 V, G = +1, VSTEP = 10 V, CL = 20 pF(5)  
To 0.1%, VS = 40 V, VSTEP = 10 V, G = +1, CL = 20 pF  
To 0.1%, VS = 40 V, VSTEP = 2 V, G = +1, CL = 20 pF  
To 0.01%, VS = 40 V, VSTEP = 10 V, G = +1, CL = 20 pF  
To 0.01%, VS = 40 V, VSTEP = 2 V, G = +1, CL = 20 pF  
G = +1, RL = 10 kΩ, CL = 20 pF  
0.65  
0.3  
tS  
Settling time  
μs  
0.86  
0.44  
Phase margin  
64  
°
Overload recovery time  
VIN × gain > VS  
170  
ns  
0.00005%  
126  
VS = 40 V, VO = 3 VRMS, G = 1, f = 1 kHz, RL = 10 kΩ  
VS = 10 V, VO = 3 VRMS, G = 1, f = 1 kHz, RL = 128 Ω  
VS = 10 V, VO = 0.4 VRMS, G = 1, f = 1 kHz, RL = 32 Ω  
dB  
dB  
dB  
0.0032%  
90  
Total harmonic distortion +  
noise  
THD+N  
0.00032%  
110  
OUTPUT  
VS = 40 V, RL = no load  
VS = 40 V, RL = 10 kΩ  
VS = 40 V, RL = 2 kΩ  
7
48  
60  
220  
0.5  
300  
Voltage output swing from Positive and negative  
mV  
rail  
rail headroom  
VS = 2.7 V, RL = no load  
VS = 2.7 V, RL = 10 kΩ  
VS = 2.7 V, RL = 2 kΩ  
5
20  
50  
20  
ISC  
Short-circuit current  
Capacitive load drive  
±65(3)  
mA  
pF  
CLOAD  
See Phase Margin vs Capacitive Load  
Open-loop output  
impedance  
See Open-Loop Output Impedance vs  
ZO  
IO = 0 A  
Frequency  
POWER SUPPLY  
2.4  
2.8  
OPA2992, OPA4992, IO = 0 A  
OPA992, IO = 0 A  
TA = –40°C to 125°C  
TA = –40°C to 125°C  
2.84  
2.92  
2.98  
Quiescent current per  
amplifier  
IQ  
mA  
2.48  
SHUTDOWN  
Quiescent current per  
amplifier  
IQSD  
VS = 2.7 V to 40 V, all amplifiers disabled, SHDN = V– + 2 V  
VS = 2.7 V to 40 V, amplifier disabled  
40  
45  
µA  
Output impedance during  
shutdown  
ZSHDN  
10 || 2  
GΩ || pF  
For valid input high, the SHDN pin voltage should be greater  
than the maximum threshold but less than or equal to V+ or  
(V–) + 20 V, whichever is less  
Logic high threshold  
voltage (amplifier disabled)  
VIH  
(V–) + 1.1 V  
V
Logic low threshold  
For valid input low, the SHDN pin voltage should be less than (V–) + 0.2  
VIL  
V
voltage (amplifier enabled) the minimum threshold but greater than or equal to V–  
V
Amplifier enable time (from VS = ±20 V, G = +1, VCM = VS / 2, RL = 10 kΩ connected to  
tON  
tOFF  
15  
3
µs  
µs  
shutdown) (2)  
V–  
VS = ±20 V, G = +1, VCM = VS / 2, RL = 10 kΩ connected to  
V–  
Amplifier disable time (2)  
VS = 2.7 V to 40 V, (V–) + 20 V (4) ≥ SHDN ≥ (V–) + 0.9 V  
VS = 2.7 V to 40 V, (V–) ≤ SHDN ≤ (V–) + 0.7 V  
500  
150  
SHDN pin input bias  
current (per pin)  
nA  
(1) Specified by characterization only.  
(2) Disable time (tOFF) and enable time (tON) are defined as the time interval between the 50% point of the signal applied to the SHDN pin  
and the point at which the output voltage reaches 10% (disable) or 90% (enable) of its final value.  
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(3) At high supply voltage, placing the OPAx992 in a sudden short to mid-supply or ground will lead to rapid thermal shutdown. Output  
current greater than ISC can be achieved if rapid thermal shutdown is avoided as per Output Voltage Swing vs Output Current.  
(4) SHDN pin should not exceed V+ or (V-) + 20 V, whichever is less.  
(5) See Slew Rate vs Input Step Voltage for more information.  
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6.8 Typical Characteristics  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
45  
40  
35  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
0
-675 -525 -375 -225 -75  
0
75  
Offset Voltage (µV)  
225 375 525 675  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
Offset Voltage Drift (µV/°C)  
0.7  
0.8  
0.9  
D001  
D002  
Distribution from 74 amplifiers, TA = 25°C  
Distribution from 74 amplifiers  
Figure 6-2. Offset Voltage Drift Distribution  
Figure 6-1. Offset Voltage Production Distribution  
500  
2000  
1600  
1200  
800  
400  
300  
200  
100  
0
400  
0
-400  
-800  
-1200  
-1600  
-2000  
-100  
-200  
-300  
-400  
-500  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D014  
D013  
VCM = V+  
VCM = V-  
Data from 74 amplifiers  
Figure 6-4. Offset Voltage vs Temperature  
Data from 74 amplifiers  
Figure 6-3. Offset Voltage vs Temperature  
2000  
1600  
1200  
800  
2000  
1600  
1200  
800  
400  
400  
0
0
-400  
-800  
-1200  
-1600  
-2000  
-400  
-800  
-1200  
-1600  
-2000  
-20 -16 -12  
-8  
-4  
Common-Mode Voltage (V)  
0
4
8
12  
16  
20  
16  
16.5  
17  
17.5  
Common-Mode Voltage (V)  
18  
18.5  
19  
19.5  
20  
D015  
D060  
TA = 25°C  
TA = 25°C  
Data from 74 amplifiers  
Data from 74 amplifiers  
Figure 6-5. Offset Voltage vs Common-Mode Voltage  
Figure 6-6. Offset Voltage vs Common-Mode Voltage (Transition  
Region)  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
2000  
1600  
1200  
800  
2000  
1600  
1200  
800  
400  
400  
0
0
-400  
-800  
-1200  
-1600  
-2000  
-400  
-800  
-1200  
-1600  
-2000  
-20 -16 -12  
-8  
-4  
0
4
8
Common-Mode Voltage (V)  
12  
16  
20  
16  
16.5  
17  
17.5  
18  
18.5  
Common-Mode Voltage (V)  
19  
19.5  
20  
D016  
D061  
TA = 125°C  
TA = 125°C  
Data from 74 amplifiers  
Data from 74 amplifiers  
Figure 6-7. Offset Voltage vs Common-Mode Voltage  
Figure 6-8. Offset Voltage vs Common-Mode Voltage (Transition  
Region)  
2000  
1600  
1200  
800  
2000  
1600  
1200  
800  
400  
400  
0
0
-400  
-800  
-1200  
-1600  
-2000  
-400  
-800  
-1200  
-1600  
-2000  
-20 -16 -12  
-8  
-4  
Common-Mode Voltage (V)  
0
4
8
12  
16  
20  
16  
16.5  
17  
17.5  
Common-Mode Voltage (V)  
18  
18.5  
19  
19.5  
20  
D017  
D062  
TA = –40°C  
TA = –40°C  
Data from 74 amplifiers  
Data from 74 amplifiers  
Figure 6-9. Offset Voltage vs Common-Mode Voltage  
Figure 6-10. Offset Voltage vs Common-Mode Voltage  
(Transition Region)  
105  
90  
75  
60  
45  
30  
15  
0
180  
160  
140  
120  
100  
80  
500  
400  
300  
200  
100  
0
Gain(dB)  
Phase(è)  
-100  
-200  
-300  
-400  
-500  
60  
40  
-15  
100  
20  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
0
4
8
12  
16  
20  
24  
Supply Voltage (V)  
28  
32  
36  
40  
D003  
D018  
CL = 20 pF  
VCM = V–  
Figure 6-12. Open-Loop Gain and Phase vs Frequency  
Data from 74 amplifiers  
Figure 6-11. Offset Voltage vs Power Supply  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
75  
60  
45  
30  
15  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
IB-  
IB+  
IOS  
G=-1  
G=1  
G=11  
G=101  
G=1001  
0
-15  
-30  
-45  
-5  
-10  
-15  
-20  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
-20 -16 -12  
-8  
-4  
0
4
Common-Mode Voltage (V)  
8
12  
16  
20  
D005  
D019  
Figure 6-13. Closed-Loop Gain vs Frequency  
Figure 6-14. Input Bias Current and Offset Current vs Common-  
Mode Voltage  
2000  
1800  
1600  
1400  
1200  
1000  
800  
50  
IB-  
IB+  
IOS  
SR+  
SR-  
45  
40  
35  
30  
25  
20  
15  
10  
5
600  
400  
200  
0
-200  
0
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
0
0.5  
1
1.5  
2
2.5  
3
Input Step (V)  
3.5  
4
4.5  
5
D020  
D035  
Figure 6-15. Input Bias Current and Offset Current vs  
Temperature  
Figure 6-16. Slew Rate vs Input Step Voltage  
V+  
V+ - 1V  
V+ - 2V  
V+ - 3V  
V+ - 4V  
V+ - 5V  
V+ - 6V  
V+ - 7V  
V- + 10V  
V- + 9V  
V- + 8V  
V- + 7V  
V- + 6V  
V- + 5V  
V- + 4V  
V- + 3V  
V- + 2V  
V- + 1V  
V-  
-40°C  
25°C  
125°C  
V+ - 8V  
-40°C  
25°C  
V+ - 9V  
125°C  
V+ - 10V  
0
10  
20  
30  
40  
50  
60  
Output Current (mA)  
70  
80  
90 100  
0
10  
20  
30  
40  
50  
60  
Output Current (mA)  
70  
80  
90 100  
D022  
D021  
VS = 40 V  
VS = 40 V  
Figure 6-18. Output Voltage Swing vs Output Current (Sinking)  
Figure 6-17. Output Voltage Swing vs Output Current (Sourcing)  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
V+  
V+ - 1V  
V+ - 2V  
V+ - 3V  
V+ - 4V  
V+ - 5V  
V- + 5V  
V- + 4V  
V- + 3V  
V- + 2V  
V- + 1V  
V-  
-40°C  
25°C  
125°C  
-40°C  
25°C  
125°C  
0
10  
20  
30  
40  
Output Current (mA)  
50  
60  
70  
80  
90 100  
0
10  
20  
30  
40  
Output Current (mA)  
50  
60  
70  
80  
90 100  
D049  
D050  
VS = 5 V  
VS = 5 V  
Figure 6-19. Output Voltage Swing vs Output Current (Sourcing) Figure 6-20. Output Voltage Swing vs Output Current (Sinking)  
1000  
100  
10  
60  
120  
105  
90  
75  
60  
45  
30  
15  
0
CMRR  
PSRR+  
PSRR-  
80  
100  
120  
140  
1
0.1  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D023  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
VS = 40 V  
D006  
Figure 6-21. CMRR and PSRR vs Frequency  
Figure 6-22. CMRR vs Temperature  
1000  
100  
10  
60  
1000  
100  
10  
60  
80  
80  
100  
120  
140  
100  
120  
140  
1
1
0.1  
0.1  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D051  
D052  
VS = 5 V  
VS = 2.7 V  
Figure 6-24. CMRR vs Temperature  
Figure 6-23. CMRR vs Temperature  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
100  
80  
2
1.5  
1
10  
100  
120  
140  
160  
0.5  
0
1
-0.5  
-1  
0.1  
-1.5  
-2  
0.01  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D024  
Time (1s/div)  
Figure 6-25. PSRR vs Temperature  
D025  
Figure 6-26. 0.1-Hz to 10-Hz Noise  
2.8  
2.4  
2
100  
10  
1
1.6  
1.2  
0.8  
0.4  
0
0
4
8
12  
16  
20  
24  
Supply Voltage (V)  
28  
32  
36  
40  
10  
100  
1k  
Frequency (Hz)  
10k  
D026  
D007  
Figure 6-27. Input Voltage Noise Spectral Density vs Frequency  
VCM = V–  
Figure 6-28. Quiescent Current vs Supply Voltage  
2.6  
2.55  
2.5  
2.45  
2.4  
2.35  
2.3  
2.25  
2.2  
2.15  
2.1  
2.05  
2
1.95  
1.9  
1.85  
1.8  
145  
VS = 2.7V  
VS = 5V  
VS = 40V  
140  
135  
130  
125  
120  
115  
110  
105  
100  
Vs=2.7V  
Vs=5V  
Vs=40V  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D028  
D24_  
Figure 6-30. Open-Loop Voltage Gain vs Temperature (dB)  
VCM = V–  
Figure 6-29. Quiescent Current vs Temperature  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
1000  
100  
10  
70  
60  
50  
40  
30  
20  
10  
0
1
RISO = 0W, Overshoot (+)  
RISO = 0W, Overshoot (-)  
RISO = 50W, Overshoot (+)  
RISO = 50W, Overshoot (-)  
0.1  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
0
80  
160  
240 320  
Capacitive Load (pF)  
400  
480  
560  
D099  
D029  
Figure 6-31. Open-Loop Output Impedance vs Frequency  
20-mVpp Output Step, G = -1  
Figure 6-32. Small-Signal Overshoot vs Capacitive Load  
70  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
RISO = 0W, Overshoot (+)  
RISO = 0W, Overshoot (-)  
60  
RISO = 50W, Overshoot (+)  
RISO = 50W, Overshoot (-)  
50  
40  
30  
20  
10  
0
0
80  
160  
240 320  
Capacitive Load (pF)  
400  
480  
560  
0
20 40 60 80 100 120 140 160 180 200 220  
Capacitive Load (pF)  
D030  
D004  
20-mVpp Output Step, G = +1  
G = +1  
Figure 6-33. Small-Signal Overshoot vs Capacitive Load  
Figure 6-34. Phase Margin vs Capacitive Load  
Input  
Output  
Input  
Output  
Time (25µs/div)  
Time (100ns/div)  
D031  
D032  
VIN = ±10 Vpp; VS = VOUT = ±9.55 V  
G = –10  
Figure 6-35. No Phase Reversal  
Figure 6-36. Positive Overload Recovery  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
20  
Input  
Output  
Input  
Output  
10  
0
-10  
-20  
Time (100ns/div)  
Time (2 µs/div)  
D053  
D033  
G = –10  
CL = 20 pF, G = 1, 20-mVpp step response  
Figure 6-37. Negative Overload Recovery  
Figure 6-38. Small-Signal Step Response  
20  
10  
0
4
3
Input  
Output  
Input  
Output  
2
1
0
-1  
-2  
-3  
-4  
-10  
-20  
Time (2 µs/div)  
Time (2 µs/div)  
D054  
D034  
CL = 20 pF, G = -1, 20-mVpp step response  
CL = 20 pF, G = 1, 5-Vpp step response  
Figure 6-39. Small-Signal Step Response  
Figure 6-40. Large-Signal Step Response  
4
3
45  
40  
35  
30  
25  
20  
15  
10  
5
Input  
Output  
Vs=40V  
Vs=16V  
Vs=2.7V  
2
1
0
-1  
-2  
-3  
-4  
0
100  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
100M  
Time (2 µs/div)  
D055  
D009  
Figure 6-42. Maximum Output Voltage vs Frequency  
CL = 20 pF, G = -1, 5-Vpp step response  
Figure 6-41. Large-Signal Step Response  
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6.8 Typical Characteristics (continued)  
at TA = 25°C, VS = ±20 V, VCM = VS / 2, RLOAD = 10 kΩ (unless otherwise noted)  
-60  
-70  
120  
110  
100  
90  
-80  
-90  
-100  
-110  
-120  
-130  
-140  
-150  
-160  
80  
70  
60  
50  
40  
30  
20  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
10M  
100M  
Frequency (Hz)  
1G  
D011  
D012  
Figure 6-43. Channel Separation vs Frequency  
Figure 6-44. EMIRR (Electromagnetic Interference Rejection  
Ratio) vs Frequency  
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7 Detailed Description  
7.1 Overview  
The OPAx992 family (OPA992, OPA2992, and OPA4992) is a family of high voltage (40-V) general purpose  
operational amplifiers.  
These devices offer excellent DC precision and AC performance, including rail-to-rail input/output, low offset  
(±210 µV, typ), and low offset drift (±0.25 µV/°C, typ).  
Special features such as differential and common-mode input voltage range to the supply rail, high short-circuit  
current (±65 mA), high slew rate (32 V/µs), and shutdown make the OPAx992 an extremely flexible, robust, and  
high-performance operational amplifier for high-voltage industrial applications.  
7.2 Functional Block Diagram  
+
NCH Input  
Stage  
IN+  
IN-  
+
40-V  
OUT  
Gain  
Stage  
Output  
Stage  
Differential  
MUX-Friendly  
Front End  
Slew  
Boost  
Shutdown  
Circuitry  
+
PCH Input  
Stage  
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7.3 Feature Description  
7.3.1 Input Protection Circuitry  
The OPAx992 uses a special input architecture to eliminate the requirement for input protection diodes but still  
provides robust input protection under transient conditions. Figure 7-1 shows conventional input diode protection  
schemes that are activated by fast transient step responses and introduce signal distortion and settling time  
delays because of alternate current paths, as shown in Figure 7-2. For low-gain circuits, these fast-ramping input  
signals forward-bias back-to-back diodes, causing an increase in input current and resulting in extended settling  
time.  
V+  
V+  
VIN+  
VIN+  
VOUT  
VOUT  
OPAx992  
~0.7 V  
40 V  
VIN  
VINꢀ  
V  
Vꢀ  
OPAx992 Provides Full 40-V  
Differential Input Range  
Conventional Input Protection  
Limits Differential Input Range  
Figure 7-1. OPAx992 Input Protection Does Not Limit Differential Input Capability  
1
Ron_mux  
Vn = 10 V  
RFILT  
10 V  
Sn  
D
1
2
~œ9.3 V  
10 V  
CFILT  
CS  
CD  
VINœ  
2
Ron_mux  
Sn+1  
Vn+1 = œ10 V RFILT  
œ10 V  
~0.7 V  
VOUT  
CFILT  
CS  
Idiode_transient  
VIN+  
œ10 V  
Input Low-Pass Filter  
Simplified Mux Model  
Buffer Amplifier  
Figure 7-2. Back-to-Back Diodes Create Settling Issues  
The OPAx992 family of operational amplifiers provides a true high-impedance differential input capability for  
high-voltage applications using a patented input protection architecture that does not introduce additional signal  
distortion or delayed settling time, making the device an optimal op amp for multichannel, high-switched, input  
applications. The OPAx992 tolerates a maximum differential swing (voltage between inverting and non-inverting  
pins of the op amp) of up to 40 V, making the device suitable for use as a comparator or in applications  
with fast-ramping input signals such as data-acquisition systems; see the TI TechNote MUX-Friendly Precision  
Operational Amplifiers for more information.  
7.3.2 EMI Rejection  
The OPAx992 uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI from  
sources such as wireless communications and densely-populated boards with a mix of analog signal chain and  
digital components. EMI immunity can be improved with circuit design techniques; the OPAx992 benefits from  
these design improvements. Texas Instruments has developed the ability to accurately measure and quantify the  
immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz. Figure  
7-3 shows the results of this testing on the OPAx992. Table 7-1 shows the EMIRR IN+ values for the OPAx992 at  
particular frequencies commonly encountered in real-world applications. The EMI Rejection Ratio of Operational  
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Amplifiers application report contains detailed information on the topic of EMIRR performance as it relates to op  
amps and is available for download from www.ti.com.  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10M  
100M  
Frequency (Hz)  
1G  
D012  
Figure 7-3. EMIRR Testing  
Table 7-1. OPAx992 EMIRR IN+ For Frequencies of Interest  
FREQUENCY  
APPLICATION OR ALLOCATION  
EMIRR IN+  
Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)  
applications  
400 MHz  
50.0 dB  
Global system for mobile communications (GSM) applications, radio communication, navigation,  
GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications  
900 MHz  
1.8 GHz  
2.4 GHz  
3.6 GHz  
5 GHz  
56.3 dB  
65.6 dB  
70.0 dB  
78.9 dB  
91.0 dB  
GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)  
802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and  
medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)  
Radiolocation, aero communication and navigation, satellite, mobile, S-band  
802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite  
operation, C-band (4 GHz to 8 GHz)  
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7.3.3 Thermal Protection  
The internal power dissipation of any amplifier causes its internal (junction) temperature to rise. This  
phenomenon is called self heating. The absolute maximum junction temperature of the OPAx992 is 150°C.  
Exceeding this temperature causes damage to the device. The OPAx992 has a thermal protection feature that  
reduces damage from self heating. The protection works by monitoring the temperature of the device and  
turning off the op amp output drive for temperatures above 170°C. Figure 7-4 shows an application example  
for the OPA2992 that has significant self heating because of its power dissipation (0.954 W). In this example,  
both channels have a quiescent power dissipation while one of the channels has a significant load. Thermal  
calculations indicate that for an ambient temperature of 55°C, the device junction temperature reaches 180°C.  
The actual device, however, turns off the output drive to recover towards a safe junction temperature. Figure 7-4  
shows how the circuit behaves during thermal protection. During normal operation, the device acts as a buffer so  
the output is 3 V. When self heating causes the device junction temperature to increase above the internal limit,  
the thermal protection forces the output to a high-impedance state and the output is pulled to ground through  
resistor RL. If the condition that caused excessive power dissipation is not removed, the amplifier will oscillate  
between a shutdown and enabled state until the output fault is corrected. Please note that thermal performance  
can vary greatly depending on the package selected and the PCB layout design. This example uses the thermal  
performance of the SOIC (8) package.  
One channel has load  
Consider IQ of two channels  
TA = 55°C  
3 V  
30 V  
PD = 0.954W  
JA = 131°C/W  
0 V  
TJ = 131°C/W × 0.954W + 55°C  
TJ = 180°C (expected)  
OPA2992  
170ºC  
IOUT = 30 mA  
+
3 V  
RL  
100  
+
VIN  
3 V  
Figure 7-4. Thermal Protection  
7.3.4 Capacitive Load and Stability  
The OPAx992 features an output stage capable of driving moderate capacitive loads, and by leveraging an  
isolation resistor, the device can easily be configured to drive larger capacitive loads. Increasing the gain  
enhances the ability of the amplifier to drive greater capacitive loads; see Figure 7-5 and Figure 7-6. The  
particular op amp circuit configuration, layout, gain, and output loading are some of the factors to consider when  
establishing whether an amplifier will be stable in operation.  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
RISO = 0W, Overshoot (+)  
RISO = 0W, Overshoot (-)  
RISO = 50W, Overshoot (+)  
RISO = 50W, Overshoot (-)  
RISO = 0W, Overshoot (+)  
RISO = 0W, Overshoot (-)  
RISO = 50W, Overshoot (+)  
RISO = 50W, Overshoot (-)  
0
80  
160  
240 320  
Capacitive Load (pF)  
400  
480  
560  
0
80  
160  
240 320  
Capacitive Load (pF)  
400  
480  
560  
D030  
D029  
Figure 7-5. Small-Signal Overshoot vs Capacitive  
Load (20-mVpp Output Step, G = +1)  
Figure 7-6. Small-Signal Overshoot vs Capacitive  
Load (20-mVpp Output Step, G = -1)  
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For additional drive capability in unity-gain configurations, improve capacitive load drive by inserting a small  
resistor, RISO, in series with the output, as shown in Figure 7-7. This resistor significantly reduces ringing  
and maintains DC performance for purely capacitive loads. However, if a resistive load is in parallel with the  
capacitive load, then a voltage divider is created, thus introducing a gain error at the output and slightly reducing  
the output swing. The error introduced is proportional to the ratio RISO / RL, and is generally negligible at low  
output levels. A high capacitive load drive makes the OPAx992 well suited for applications such as reference  
buffers, MOSFET gate drives, and cable-shield drives. The circuit shown in Figure 7-7 uses an isolation resistor,  
RISO, to stabilize the output of an op amp. RISO modifies the open-loop gain of the system for increased phase  
margin.  
+Vs  
Vout  
Riso  
+
Cload  
+
Vin  
-Vs  
œ
Figure 7-7. Extending Capacitive Load Drive With the OPA992  
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7.3.5 Common-Mode Voltage Range  
The OPAx992 is a 40-V, true rail-to-rail input operational amplifier with an input common-mode range that  
extends to both supply rails. This wide range is achieved with paralleled complementary N-channel and P-  
channel differential input pairs, as shown in Figure 7-8. The N-channel pair is active for input voltages close to  
the positive rail, typically from (V+) – 1 V to the positive supply. The P-channel pair is active for inputs from the  
negative supply to approximately (V+) – 2 V. There is a small transition region, typically (V+) – 2 V to (V+) – 1  
V, in which both input pairs are on. This transition region can vary modestly with process variation. Within this  
region PSRR, CMRR, offset voltage, offset drift, noise, and THD performance may be degraded compared to  
operation outside this region.  
Figure 6-5 shows this transition region for a typical device in terms of input voltage offset in more detail.  
For more information on common-mode voltage range and PMOS/NMOS pair interaction, see Op Amps With  
Complementary-Pair Input Stages application note.  
V+  
IN-  
PMOS  
PMOS  
NMOS  
IN+  
NMOS  
V-  
Figure 7-8. Rail-to-Rail Input Stage  
7.3.6 Phase Reversal Protection  
The OPAx992 family has internal phase-reversal protection. Many op amps exhibit a phase reversal when the  
input is driven beyond its linear common-mode range. This condition is most often encountered in non-inverting  
circuits when the input is driven beyond the specified common-mode voltage range, causing the output to  
reverse into the opposite rail. The OPAx992 is a rail-to-rail input op amp; therefore, the common-mode range can  
extend up to the rails. Input signals beyond the rails do not cause phase reversal; instead, the output limits into  
the appropriate rail. This performance is shown in Figure 7-9. For more information on phase reversal, see Op  
Amps With Complementary-Pair Input Stages application note.  
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Input  
Output  
Time (25µs/div)  
D031  
Figure 7-9. No Phase Reversal  
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7.3.7 Electrical Overstress  
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress  
(EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even  
the output pin. Each of these different pin functions have electrical stress limits determined by the voltage  
breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to  
the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them  
from accidental ESD events both before and during product assembly.  
Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is  
helpful. Figure 7-10 shows an illustration of the ESD circuits contained in the OPAx992 (indicated by the dashed  
line area). The ESD protection circuitry involves several current-steering diodes connected from the input and  
output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device  
or the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain  
inactive during normal circuit operation.  
TVS  
RF  
+VS  
VDD  
50  
50  
R1  
RS  
IN–  
IN+  
+
Power-Supply  
ESD Cell  
RL  
ID  
+
VIN  
VSS  
–VS  
TVS  
Figure 7-10. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application  
An ESD event is very short in duration and very high voltage (for example; 1 kV, 100 ns), whereas an EOS event  
is long duration and lower voltage (for example; 50 V, 100 ms). The ESD diodes are designed for out-of-circuit  
ESD protection (that is, during assembly, test, and storage of the device before being soldered to the PCB).  
During an ESD event, the ESD signal is passed through the ESD steering diodes to an absorption circuit  
(labeled ESD power-supply circuit). The ESD absorption circuit clamps the supplies to a safe level.  
Although this behavior is necessary for out-of-circuit protection, excessive current and damage is caused if  
activated in-circuit. A transient voltage suppressors (TVS) can be used to prevent against damage caused by  
turning on the ESD absorption circuit during an in-circuit ESD event. Using the appropriate current limiting  
resistors and TVS diodes allows for the use of device ESD diodes to protect against EOS events.  
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7.3.8 Overload Recovery  
Overload recovery is defined as the time required for the op amp output to recover from a saturated state to  
a linear state. The output devices of the op amp enter a saturation region when the output voltage exceeds  
the rated operating voltage, either due to the high input voltage or the high gain. After the device enters the  
saturation region, the charge carriers in the output devices require time to return back to the linear state. After  
the charge carriers return back to the linear state, the device begins to slew at the specified slew rate. Thus, the  
propagation delay in case of an overload condition is the sum of the overload recovery time and the slew time.  
The overload recovery time for the OPAx992 is approximately 170 ns.  
7.3.9 Typical Specifications and Distributions  
Designers often have questions about a typical specification of an amplifier in order to design a more robust  
circuit. Due to natural variation in process technology and manufacturing procedures, every specification of an  
amplifier will exhibit some amount of deviation from the ideal value, like an amplifier's input offset voltage. These  
deviations often follow Gaussian ("bell curve"), or normal distributions, and circuit designers can leverage this  
information to guardband their system, even when there is not a minimum or maximum specification in the  
Electrical Characteristics table.  
0.00312% 0.13185%  
0.13185% 0.00312%  
0.00002%  
0.00002%  
2.145% 13.59% 34.13% 34.13% 13.59% 2.145%  
1
1 1 1 1 1 1 1 1  
1
1
1
-61 -51 -41 -31 -21 -1  
+1 +21 +31 +41 +51 +61  
Figure 7-11. Ideal Gaussian Distribution  
The Figure 7-11 figure shows an example distribution, where µ, or mu, is the mean of the distribution, and  
where σ, or sigma, is the standard deviation of a system. For a specification that exhibits this kind of distribution,  
approximately two-thirds (68.26%) of all units can be expected to have a value within one standard deviation, or  
one sigma, of the mean (from µ–σ to µ+σ).  
Depending on the specification, values listed in the typical column of the Electrical Characteristics table are  
represented in different ways. As a general rule of thumb, if a specification naturally has a nonzero mean  
(for example, like gain bandwidth), then the typical value is equal to the mean (µ). However, if a specification  
naturally has a mean near zero (like input offset voltage), then the typical value is equal to the mean plus one  
standard deviation (µ + σ) in order to most accurately represent the typical value.  
You can use this chart to calculate approximate probability of a specification in a unit; for example, for OPAx992,  
the typical input voltage offset is 210 µV. So 68.2% of all OPAx992 devices are expected to have an offset from  
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–210 µV to +210 µV. At 4 σ (±840 µV), 99.9937% of the distribution has an offset voltage less than ±840 µV,  
which means 0.0063% of the population is outside of these limits, which corresponds to about 1 in 15,873 units.  
Specifications with a value in the minimum or maximum column are assured by TI, and units outside these limits  
will be removed from production material. For example, the OPAx992 family has a maximum offset voltage of  
1 mV at 25°C, and even though this corresponds to slightly less than 5 σ (≈1 in 1.7 million units), which is  
extremely unlikely, TI assures that any unit with larger offset than 1 mV will be removed from production material.  
For specifications with no value in the minimum or maximum column, consider selecting a sigma value of  
sufficient guardband for your application, and design worst-case conditions using this value. For example, the  
6-σ value corresponds to about 1 in 500 million units, which is an extremely unlikely chance, and could be  
an option as a wide guardband to design a system around. In this case, the OPAx992 family does not have  
a maximum or minimum for offset voltage drift. But based on the typical value of 0.25 µV/°C in the Electrical  
Characteristics table, it can be calculated that the 6-σ value for offset voltage drift is about 1.5 µV/°C. When  
designing for worst-case system conditions, this value can be used to estimate the worst possible offset across  
temperature without having an actual minimum or maximum value.  
Note that process variation and adjustments over time can shift typical means and standard deviations, and  
unless there is a value in the minimum or maximum specification column, TI cannot assure the performance of a  
device. This information should be used only to estimate the performance of a device.  
7.3.10 Packages With an Exposed Thermal Pad  
The OPAx992 family is available in the WSON-8 (DSG) package which features an exposed thermal pad. Inside  
the package, the die is attached to this thermal pad using an electrically conductive compound. For this reason,  
when using a package with an exposed thermal pad, the thermal pad must either be connected to V– or left  
floating. Attaching the thermal pad to a potential other than V– is not allowed, and performance of the device is  
not assured when doing so.  
7.3.11 Shutdown  
The OPAx992S devices feature one or more shutdown pins (SHDN) that disable the op amp, placing it into a  
low-power standby mode. In this mode, the op amp typically consumes about 40 µA. The SHDN pins are active  
high, meaning that shutdown mode is enabled when the input to the SHDN pin is a valid logic high. The amplifier  
is enabled when the input to the SHDN pin is a valid logic low.  
The SHDN pins are referenced to the negative supply rail of the op amp. The threshold of the shutdown feature  
lies around 800 mV (typical) and does not change with respect to the supply voltage. Hysteresis has been  
included in the switching threshold to ensure smooth switching characteristics. To ensure optimal shutdown  
behavior, the SHDN pins should be driven with valid logic signals. A valid logic low is defined as a voltage  
between V– and V– + 0.2 V. A valid logic high is defined as a voltage between V– + 1.1 V and V– + 20 V.  
The shutdown pin circuitry includes a pull-down resistor, which will inherently pull the voltage of the pin to the  
negative supply rail if not driven. Thus, to enable the amplifier, the SHDN pins should either be left floating or  
driven to a valid logic low. To disable the amplifier, the SHDN pins must be driven to a valid logic high. The  
maximum voltage allowed at the SHDN pins is V– + 20 V or V+, whichever is lower. Exceeding V– + 20V or V+,  
whichever is lower, will damage the device.  
The SHDN pins are high-impedance CMOS inputs. Channels of single and dual op amp packages are  
independently controlled, and channels of quad op amp packages are controlled in pairs. For battery-operated  
applications, this feature may be used to greatly reduce the average current and extend battery life. The  
typical enable time out of shutdown is 15 µs; disable time is 3 µs. When disabled, the output assumes a  
high-impedance state. This architecture allows the OPAx992S family to operate as a gated amplifier, multiplexer,  
or programmable-gain amplifier. Shutdown time (tOFF) depends on loading conditions and increases as load  
resistance increases. To ensure shutdown (disable) within a specific shutdown time, the specified 10-kΩ load to  
V- is required. If using the OPAx992S without a load, the resulting turnoff time significantly increases.  
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7.4 Device Functional Modes  
The OPAx992 has a single functional mode and is operational when the power-supply voltage is greater than or  
equal to 2.7 V (±1.35 V). The maximum power supply voltage for the OPAx992 is 40 V (±20 V).  
The OPAx992S devices feature a shutdown pin, which can be used to place the op amp into a low-power mode.  
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8 Application and Implementation  
Note  
Information in the following applications sections is not part of the TI component specification,  
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for  
determining suitability of components for their purposes, as well as validating and testing their design  
implementation to confirm system functionality.  
8.1 Application Information  
The OPAx992 family offers excellent DC precision and AC performance. These devices operate up to 40-V  
supply rails and offer true rail-to-rail input/output, low offset voltage and offset voltage drift, as well as 10.6-MHz  
bandwidth and high output drive. These features make the OPAx992 a robust, high-performance operational  
amplifier for high-voltage industrial applications.  
8.2 Typical Applications  
8.2.1 Low-Side Current Measurement  
Figure 8-1 shows the OPA992 configured in a low-side current sensing application. For a full analysis of the  
circuit shown in Figure 8-1 including theory, calculations, simulations, and measured data, see TI Precision  
Design TIPD129, 0-A to 1-A Single-Supply Low-Side Current-Sensing Solution.  
VCC  
5 V  
LOAD  
OPA992  
+
VOUT  
RSHUNT  
ILOAD  
100 m  
LM7705  
RF  
5.76 k  
RG  
120  
Figure 8-1. OPAx992 in a Low-Side, Current-Sensing Application  
8.2.1.1 Design Requirements  
The design requirements for this design are:  
Load current: 0 A to 1 A  
Max output voltage: 4.9 V  
Maximum shunt voltage: 100 mV  
8.2.1.2 Detailed Design Procedure  
The transfer function of the circuit in Figure 8-1 is given in Equation 1:  
VOUT = ILOAD ìRSHUNT ìGain  
(1)  
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The load current (ILOAD) produces a voltage drop across the shunt resistor (RSHUNT). The load current is set  
from 0 A to 1 A. To keep the shunt voltage below 100 mV at maximum load current, the largest shunt resistor is  
defined using Equation 2:  
VSHUNT _MAX  
100mV  
1A  
RSHUNT  
=
=
=100mW  
ILOAD_MAX  
(2)  
Using Equation 2, RSHUNT is calculated to be 100 mΩ. The voltage drop produced by ILOAD and RSHUNT is  
amplified by the OPA992 to produce an output voltage of 0 V to 4.9 V. The gain needed by the OPA992 to  
produce the necessary output voltage is calculated using Equation 3:  
V
OUT _MAX - VOUT _MIN  
(
)
Gain =  
VIN_MAX - V  
(
)
IN_MIN  
(3)  
Using Equation 3, the required gain is calculated to be 49 V/V, which is set with resistors RF and RG. Equation 4  
is used to size the resistors, RF and RG, to set the gain of the OPA992 to 49 V/V.  
R
(
(
)
)
F
Gain = 1+  
R
G
(4)  
Choosing RF as 5.76 kΩ, RG is calculated to be 120 Ω. RF and RG were chosen as 5.76 kΩ and 120 Ω because  
they are standard value resistors that create a 49:1 ratio. Other resistors that create a 49:1 ratio can also be  
used. However, excessively large resistors will generate thermal noise that exceeds the intrinsic noise of the op  
amp. Figure 8-2 shows the measured transfer function of the circuit shown in Figure 8-1.  
8.2.1.3 Application Curve  
5
4
3
2
1
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
ILOAD (A)  
1
Figure 8-2. Low-Side, Current-Sense, Transfer Function  
8.2.2 High Voltage Buffered Multiplexer  
The OPAx992S shutdown devices can be configured to create a high voltage, buffered multiplexer. Outputs can  
be connected together on a common bus and the shutdown pins can be used to select the desired channel to  
pass through. Since the amplifier circuitry has been designed such that disable transitions occur significantly  
faster than enable transitions, the amplifier naturally exhibits a "break before make" switch topology. Amplifier  
outputs enter a high impedance state when placed in shutdown, so there is no risk of bus contention when  
connecting multiple channel outputs together. Additionally, because outputs are isolated from inputs, there is no  
concern about the impedance at the input of each channel interacting undesirably with the impedance at the  
output, like an amplifier gain stage or ADC driver circuit. Also, because this topology uses amplifiers instead of  
MOSFET switches, other common issues with multiplexers such as charge injection or signal error due to RON  
effects are eliminated.  
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Figure 8-3 shows an example topology for a basic 2:1 multiplexer. When SEL is low, channel 1 is selected and  
active; when SEL is high, channel 2 is selected and active. For more information on how to use the OPAx992S  
shutdown function, see the shutdown section in Section 6.7.  
Channel 1  
Channel 1  
+
Input  
SEL  
Output  
Channel 2  
Input  
+
Channel 2  
Figure 8-3. High Voltage Buffered Multiplexer  
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9 Power Supply Recommendations  
The OPAx992 is specified for operation from 2.7 V to 40 V (±1.35 V to ±20 V); many specifications apply from  
–40°C to 125°C or with specific supply voltages and test conditions.  
CAUTION  
Supply voltages larger than 40 V can permanently damage the device; see Section 6.1.  
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or  
high-impedance power supplies. For more detailed information on bypass capacitor placement, refer to Section  
10.  
10 Layout  
10.1 Layout Guidelines  
For best operational performance of the device, use good PCB layout practices, including:  
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and op amp itself.  
Bypass capacitors are used to reduce the coupled noise by providing low-impedance power sources local to  
the analog circuitry.  
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as  
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-  
supply applications.  
Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective  
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.  
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital  
and analog grounds paying attention to the flow of the ground current.  
In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as  
possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much better as  
opposed to in parallel with the noisy trace.  
Place the external components as close to the device as possible. As illustrated in Figure 10-2, keeping RF  
and RG close to the inverting input minimizes parasitic capacitance.  
Keep the length of input traces as short as possible. Always remember that the input traces are the most  
sensitive part of the circuit.  
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce  
leakage currents from nearby traces that are at different potentials.  
Cleaning the PCB following board assembly is recommended for best performance.  
Any precision integrated circuit may experience performance shifts due to moisture ingress into the plastic  
package. Following any aqueous PCB cleaning process, baking the PCB assembly is recommended to  
remove moisture introduced into the device packaging during the cleaning process. A low temperature, post  
cleaning bake at 85°C for 30 minutes is sufficient for most circumstances.  
Copyright © 2021 Texas Instruments Incorporated  
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OPA992, OPA2992, OPA4992  
SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
www.ti.com  
10.2 Layout Example  
V-  
C3  
INPUT  
OUTPUT  
U1  
OPA992  
2
1
R3  
+
4
3
C4  
C2  
V+  
R1  
C1  
R2  
Figure 10-1. Schematic for Noninverting Configuration Layout Example  
GND  
GND  
OUTPUT  
V-  
GND  
Figure 10-2. Operational Amplifier Board Layout for Noninverting Configuration - SC70 (DCK) Package  
Copyright © 2021 Texas Instruments Incorporated  
34  
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Product Folder Links: OPA992 OPA2992 OPA4992  
 
 
OPA992, OPA2992, OPA4992  
SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
www.ti.com  
11 Device and Documentation Support  
11.1 Device Support  
11.1.1 Development Support  
11.1.1.1 TINA-TI(Free Software Download)  
TINAis a simple, powerful, and easy-to-use circuit simulation program based on a SPICE engine. TINA-TI is a  
free, fully-functional version of the TINA software, preloaded with a library of macro models in addition to a range  
of both passive and active models. TINA-TI provides all the conventional dc, transient, and frequency domain  
analysis of SPICE, as well as additional design capabilities.  
Available as a free download from the Analog eLab Design Center, TINA-TI offers extensive post-processing  
capability that allows users to format results in a variety of ways. Virtual instruments offer the ability to select  
input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic quick-start tool.  
Note  
These files require that either the TINA software (from DesignSoft) or TINA-TI software be installed.  
Download the free TINA-TI software from the TINA-TI folder.  
11.2 Documentation Support  
11.2.1 Related Documentation  
Texas Instruments, MUX-Friendly, Precision Operational Amplifiers application brief  
Texas Instruments, EMI Rejection Ratio of Operational Amplifiers application report  
Texas Instruments, Op Amps With Complementary-Pair Input Stages application note  
Texas Instruments, 0-1-A, Single-Supply, Low-Side, Current Sensing Solution reference design (TIPD129)  
11.3 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on  
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For  
change details, review the revision history included in any revised document.  
11.4 Support Resources  
TI E2Esupport forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
11.5 Trademarks  
TINA-TIare trademarks of Texas Instruments, Inc and DesignSoft, Inc.  
TINAand DesignSoftare trademarks of DesignSoft, Inc.  
TI E2Eis a trademark of Texas Instruments.  
Bluetooth® is a registered trademark of Bluetooth SIG, Inc.  
All trademarks are the property of their respective owners.  
11.6 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
Copyright © 2021 Texas Instruments Incorporated  
Submit Document Feedback  
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OPA992, OPA2992, OPA4992  
SBOSA10B – JUNE 2021 – REVISED DECEMBER 2021  
www.ti.com  
11.7 Glossary  
TI Glossary  
This glossary lists and explains terms, acronyms, and definitions.  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2021 Texas Instruments Incorporated  
36  
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Product Folder Links: OPA992 OPA2992 OPA4992  
 
 
PACKAGE OPTION ADDENDUM  
www.ti.com  
18-Dec-2021  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
OPA2992IDDFR  
OPA2992IDGKR  
OPA2992IDR  
ACTIVE SOT-23-THIN  
DDF  
DGK  
D
8
8
3000 RoHS & Green  
2500 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Call TI  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
O92F  
2JUT  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
VSSOP  
SOIC  
SN  
8
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAU  
SN  
O2992D  
O92G  
OPA2992IDSGR  
OPA2992IPWR  
OPA4992IDR  
WSON  
TSSOP  
SOIC  
DSG  
PW  
8
8
2992PW  
OPA4992D  
O4992PW  
O92DB  
1JS  
D
14  
14  
5
OPA4992IPWR  
OPA992IDBVR  
OPA992IDCKR  
OPA992SIDBVR  
POPA2992IDDFR  
POPA2992IDGKR  
POPA2992IDR  
POPA2992IDSGR  
POPA2992IPWR  
POPA4992IPWR  
POPA992IDBVR  
POPA992IDCKR  
POPA992SIDBVR  
TSSOP  
SOT-23  
SC70  
PW  
DBV  
DCK  
DBV  
DDF  
DGK  
D
5
SOT-23  
6
NIPDAU  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
Call TI  
O92SD  
ACTIVE SOT-23-THIN  
8
3000  
2500  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
VSSOP  
SOIC  
8
Call TI  
8
Call TI  
WSON  
TSSOP  
TSSOP  
SOT-23  
SC70  
DSG  
PW  
8
Call TI  
8
Call TI  
PW  
14  
5
Call TI  
DBV  
DCK  
DBV  
Call TI  
5
Call TI  
SOT-23  
6
Call TI  
(1) The marketing status values are defined as follows:  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
18-Dec-2021  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
19-Dec-2021  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
OPA2992IDDFR  
SOT-  
DDF  
8
3000  
180.0  
8.4  
3.2  
3.2  
1.4  
4.0  
8.0  
Q3  
23-THIN  
OPA2992IDR  
OPA2992IDSGR  
OPA2992IPWR  
OPA4992IDR  
SOIC  
WSON  
TSSOP  
SOIC  
D
8
8
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
330.0  
180.0  
330.0  
330.0  
330.0  
180.0  
178.0  
180.0  
12.4  
8.4  
6.4  
2.3  
7.0  
6.5  
6.9  
3.2  
2.4  
3.2  
5.2  
2.3  
3.6  
9.0  
5.6  
3.2  
2.5  
3.2  
2.1  
1.15  
1.6  
2.1  
1.6  
1.4  
1.2  
1.4  
8.0  
4.0  
8.0  
8.0  
8.0  
4.0  
4.0  
4.0  
12.0  
8.0  
Q1  
Q2  
Q1  
Q1  
Q1  
Q3  
Q3  
Q3  
DSG  
PW  
D
8
12.4  
16.4  
12.4  
8.4  
12.0  
16.0  
12.0  
8.0  
14  
14  
5
OPA4992IPWR  
OPA992IDBVR  
OPA992IDCKR  
OPA992SIDBVR  
TSSOP  
SOT-23  
SC70  
PW  
DBV  
DCK  
DBV  
5
9.0  
8.0  
SOT-23  
6
8.4  
8.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
19-Dec-2021  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
OPA2992IDDFR  
OPA2992IDR  
SOT-23-THIN  
SOIC  
DDF  
D
8
8
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
3000  
210.0  
853.0  
210.0  
853.0  
853.0  
853.0  
210.0  
180.0  
210.0  
185.0  
449.0  
185.0  
449.0  
449.0  
449.0  
185.0  
180.0  
185.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
18.0  
35.0  
OPA2992IDSGR  
OPA2992IPWR  
OPA4992IDR  
WSON  
TSSOP  
SOIC  
DSG  
PW  
D
8
8
14  
14  
5
OPA4992IPWR  
OPA992IDBVR  
OPA992IDCKR  
OPA992SIDBVR  
TSSOP  
SOT-23  
SC70  
PW  
DBV  
DCK  
DBV  
5
SOT-23  
6
Pack Materials-Page 2  
PACKAGE OUTLINE  
DDF0008A  
SOT-23 - 1.1 mm max height  
S
C
A
L
E
4
.
0
0
0
PLASTIC SMALL OUTLINE  
C
2.95  
2.65  
SEATING PLANE  
TYP  
PIN 1 ID  
AREA  
0.1 C  
A
6X 0.65  
8
1
2.95  
2.85  
NOTE 3  
2X  
1.95  
4
5
0.4  
0.2  
8X  
0.1  
C A  
B
1.65  
1.55  
B
1.1 MAX  
0.20  
0.08  
TYP  
SEE DETAIL A  
0.25  
GAGE PLANE  
0.1  
0.0  
0 - 8  
0.6  
0.3  
DETAIL A  
TYPICAL  
4222047/B 11/2015  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DDF0008A  
SOT-23 - 1.1 mm max height  
PLASTIC SMALL OUTLINE  
8X (1.05)  
SYMM  
1
8
8X (0.45)  
SYMM  
6X (0.65)  
5
4
(R0.05)  
TYP  
(2.6)  
LAND PATTERN EXAMPLE  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4222047/B 11/2015  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DDF0008A  
SOT-23 - 1.1 mm max height  
PLASTIC SMALL OUTLINE  
8X (1.05)  
SYMM  
(R0.05) TYP  
8
1
8X (0.45)  
SYMM  
6X (0.65)  
5
4
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4222047/B 11/2015  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
DBV0005A  
SOT-23 - 1.45 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
3.0  
2.6  
0.1 C  
1.75  
1.45  
1.45  
0.90  
B
A
PIN 1  
INDEX AREA  
1
2
5
2X 0.95  
1.9  
3.05  
2.75  
1.9  
4
3
0.5  
5X  
0.3  
0.15  
0.00  
(1.1)  
TYP  
0.2  
C A B  
0.25  
GAGE PLANE  
0.22  
0.08  
TYP  
8
0
TYP  
0.6  
0.3  
TYP  
SEATING PLANE  
4214839/F 06/2021  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Refernce JEDEC MO-178.  
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.25 mm per side.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X (0.95)  
4
(R0.05) TYP  
(2.6)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214839/F 06/2021  
NOTES: (continued)  
5. Publication IPC-7351 may have alternate designs.  
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBV0005A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (1.1)  
1
5
5X (0.6)  
SYMM  
(1.9)  
2
3
2X(0.95)  
4
(R0.05) TYP  
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4214839/F 06/2021  
NOTES: (continued)  
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
8. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
DBV0006A  
SOT-23 - 1.45 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
3.0  
2.6  
0.1 C  
1.75  
1.45  
B
1.45 MAX  
A
PIN 1  
INDEX AREA  
1
2
6
5
2X 0.95  
1.9  
3.05  
2.75  
4
3
0.50  
6X  
0.25  
C A B  
0.15  
0.00  
0.2  
(1.1)  
TYP  
0.25  
GAGE PLANE  
0.22  
0.08  
TYP  
8
TYP  
0
0.6  
0.3  
TYP  
SEATING PLANE  
4214840/C 06/2021  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.25 per side.  
4. Leads 1,2,3 may be wider than leads 4,5,6 for package orientation.  
5. Refernce JEDEC MO-178.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBV0006A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
6X (1.1)  
1
6X (0.6)  
6
SYMM  
5
2
3
2X (0.95)  
4
(R0.05) TYP  
(2.6)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214840/C 06/2021  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBV0006A  
SOT-23 - 1.45 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
6X (1.1)  
1
6X (0.6)  
6
SYMM  
5
2
3
2X(0.95)  
4
(R0.05) TYP  
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4214840/C 06/2021  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
GENERIC PACKAGE VIEW  
DSG 8  
2 x 2, 0.5 mm pitch  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
This image is a representation of the package family, actual package may vary.  
Refer to the product data sheet for package details.  
4224783/A  
www.ti.com  
PACKAGE OUTLINE  
DSG0008A  
WSON - 0.8 mm max height  
SCALE 5.500  
PLASTIC SMALL OUTLINE - NO LEAD  
2.1  
1.9  
B
A
PIN 1 INDEX AREA  
2.1  
1.9  
0.32  
0.18  
0.4  
0.2  
ALTERNATIVE TERMINAL SHAPE  
TYPICAL  
C
0.8 MAX  
SEATING PLANE  
0.08 C  
0.05  
0.00  
EXPOSED  
THERMAL PAD  
(0.2) TYP  
0.9 0.1  
5
4
6X 0.5  
2X  
1.5  
9
1.6 0.1  
8
1
0.32  
0.18  
8X  
0.4  
0.2  
PIN 1 ID  
8X  
0.1  
C A B  
C
0.05  
4218900/D 04/2020  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DSG0008A  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
(0.9)  
(
0.2) VIA  
8X (0.5)  
TYP  
1
8
8X (0.25)  
(0.55)  
SYMM  
9
(1.6)  
6X (0.5)  
5
4
SYMM  
(1.9)  
(R0.05) TYP  
LAND PATTERN EXAMPLE  
SCALE:20X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
SOLDER MASK  
OPENING  
METAL  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4218900/D 04/2020  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown  
on this view. It is recommended that vias under paste be filled, plugged or tented.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DSG0008A  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
8X (0.5)  
METAL  
8
SYMM  
1
8X (0.25)  
(0.45)  
SYMM  
9
(0.7)  
6X (0.5)  
5
4
(R0.05) TYP  
(0.9)  
(1.9)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD 9:  
87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE  
SCALE:25X  
4218900/D 04/2020  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
PACKAGE OUTLINE  
PW0008A  
TSSOP - 1.2 mm max height  
S
C
A
L
E
2
.
8
0
0
SMALL OUTLINE PACKAGE  
C
6.6  
6.2  
SEATING PLANE  
TYP  
PIN 1 ID  
AREA  
A
0.1 C  
6X 0.65  
8
5
1
3.1  
2.9  
NOTE 3  
2X  
1.95  
4
0.30  
0.19  
8X  
4.5  
4.3  
1.2 MAX  
B
0.1  
C A  
B
NOTE 4  
(0.15) TYP  
SEE DETAIL A  
0.25  
GAGE PLANE  
0.15  
0.05  
0.75  
0.50  
0 - 8  
DETAIL A  
TYPICAL  
4221848/A 02/2015  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.  
5. Reference JEDEC registration MO-153, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
PW0008A  
TSSOP - 1.2 mm max height  
SMALL OUTLINE PACKAGE  
8X (1.5)  
SYMM  
8X (0.45)  
(R0.05)  
1
4
TYP  
8
SYMM  
6X (0.65)  
5
(5.8)  
LAND PATTERN EXAMPLE  
SCALE:10X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
0.05 MAX  
ALL AROUND  
0.05 MIN  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
NOT TO SCALE  
4221848/A 02/2015  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
PW0008A  
TSSOP - 1.2 mm max height  
SMALL OUTLINE PACKAGE  
8X (1.5)  
SYMM  
(R0.05) TYP  
8X (0.45)  
1
4
8
SYMM  
6X (0.65)  
5
(5.8)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:10X  
4221848/A 02/2015  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, regulatory or other requirements.  
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an  
application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license  
is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you  
will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these  
resources.  
TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with  
such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for  
TI products.  
TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2021, Texas Instruments Incorporated  

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