OPA375IDCKR [TI]

单路、5.5V、10MHz、低噪声 (4.6nV/√Hz)、68mA 输出电流、RRO 运算放大器 | DCK | 5 | -40 to 125;
OPA375IDCKR
型号: OPA375IDCKR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

单路、5.5V、10MHz、低噪声 (4.6nV/√Hz)、68mA 输出电流、RRO 运算放大器 | DCK | 5 | -40 to 125

放大器 运算放大器
文件: 总66页 (文件大小:5072K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
OPA375, OPA2375  
ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
OPA375OPA2375OPA4375 500µV(最大值)、10MHz、低宽带噪声、RRO  
运算放大器  
1 特性  
3 说明  
• 低宽带噪声3.5nV/Hz  
• 低失调电压500µV最大值)  
THD+N0.00015%  
• 增益带宽10MHz  
• 轨到轨输出  
• 单位增益稳定  
IQ:  
OPA375890µA/通道  
OPA2375/OPA4375990µA/通道  
• 宽电源电压范围:  
OPAx375 列包括单通道 (OPA375) 双通道  
(OPA2375) 和四通道 (OPA2375) 通用 CMOS 运算放  
大器这些运算放大器提供 3.5nV/Hz 的超低噪声系  
数、500µV最大值的低失调电压和 10MHz 的高带  
宽。OPAx375 系列器件凭借低噪声和高带宽特性适  
用于要求在成本和性能之间达到良好平衡的各种高精度  
应用。此外OPAx375 的输入偏置电流支持具有高源  
阻抗的应用。  
OPAx375 系列器件采用稳健耐用的设计方便电路设  
计人员使用这得益于该器件具有单位增益稳定性、集  
成的 RFI/EMI 抑制滤波器、在过驱条件下不会出现反  
相并且具有高静电放电 (ESD) 保护功能 (2kV HBM)。  
另外电阻式开环输出阻抗使其易于在较高的容性负载  
下保持稳定。  
OPA3752.25V 5.5V  
OPA2375/OPA43751.7V 5.5V  
• 低失调电压漂移±0.16µV/°C  
2 应用  
该运算放大器经优化可在低电压下工作OPA375 的工  
作电压低至 2.25V (±1.125V)OPA2375 OPA4375  
的工作电压可低至 1.7V (±0.85V)。所有器件的最高工  
作电压均为 5.5V (±2.75V)额定温度范围为 –40°C  
125°C。  
光电二极管放大器  
精密传感器前端  
ADC 输入驱动器放大器  
测试和测量设备  
传感器现场变送器  
可穿戴消费类应用  
音频设备  
单通道 OPA375 采用小尺寸的 SC70-5 封装。双通道  
OPA2375 可采用多种封装选项其中包括 1.5mm ×  
2.0mm X2QFN 微型封装。  
医疗仪器  
有源滤波器  
器件信息  
100  
70  
器件型号(1)  
OPA375  
封装尺寸标称值)  
1.25mm × 2.00mm  
3.91mm × 4.90mm  
3.00mm × 4.40mm  
3.00mm × 3.00mm  
1.60mm × 2.90mm  
2.00mm × 2.00mm  
1.50mm x 2.00mm  
封装  
50  
SC70 (5)  
SOIC (8)  
30  
20  
TSSOP (8)  
VSSOP (8)  
SOT-23 (8)  
WSON (8)  
X2QFN (10)  
OPA2375  
10  
7
5
3
2
(1) 如需了解所有可用封装请参阅数据表末尾的可订购产品附  
录。  
1
10  
100  
1k  
Frequency (Hz)  
10k  
100k  
D012  
噪声频谱密度与频率间的关系  
本文档旨在为方便起见提供有TI 产品中文版本的信息以确认产品的概要。有关适用的官方英文版本的最新信息请访问  
www.ti.com其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前请务必参考最新版本的英文版本。  
English Data Sheet: SBOS886  
 
 
 
OPA375, OPA2375  
ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
www.ti.com.cn  
Table of Contents  
8.4 Device Functional Modes..........................................31  
9 Application and Implementation..................................32  
9.1 Application Information............................................. 32  
9.2 Single-Supply Electret Microphone Preamplifier  
1 特性................................................................................... 1  
2 应用................................................................................... 1  
3 说明................................................................................... 1  
4 Revision History.............................................................. 2  
5 Device Comparison Table...............................................4  
6 Pin Configuration and Functions...................................5  
7 Specifications.................................................................. 7  
7.1 Absolute Maximum Ratings ....................................... 7  
7.2 ESD Ratings .............................................................. 7  
7.3 Recommended Operating Conditions ........................7  
7.4 Thermal Information for Single Channel .................... 7  
7.5 Thermal Information for Dual Channel .......................8  
7.6 Electrical Characteristics ............................................9  
7.7 Typical Characteristics: OPA375...............................12  
7.8 Typical Characteristics: OPA2375.............................19  
8 Detailed Description......................................................26  
8.1 Overview...................................................................26  
8.2 Functional Block Diagram.........................................26  
8.3 Feature Description...................................................26  
With Speech Filter.......................................................32  
10 Power Supply Recommendations..............................35  
11 Layout...........................................................................36  
11.1 Layout Guidelines................................................... 36  
11.2 Layout Example...................................................... 37  
12 Device and Documentation Support..........................39  
12.1 Documentation Support.......................................... 39  
12.2 接收文档更新通知................................................... 39  
12.3 支持资源..................................................................39  
12.4 Trademarks.............................................................39  
12.5 Electrostatic Discharge Caution..............................39  
12.6 术语表..................................................................... 39  
13 Mechanical, Packaging, and Orderable  
Information.................................................................... 40  
4 Revision History  
以前版本的页码可能与当前版本的页码不同  
Changes from Revision D (February 2021) to Revision E (August 2021)  
Page  
OPA2375 VSSOP (DGK) 封装从预发更改为正在供..............................................................................1  
Removed preview tag for the VSSOP (DGK) package in the Device Comparison Table section...................... 4  
Added VSSOP Package thermal data for OPA2375 in the Thermal Information for Dual Channel section....... 7  
Changes from Revision C (June 2020) to Revision D (February 2021)  
Page  
• 更新了整个文档中的表格、图和交叉参考的编号格式.........................................................................................1  
Changed Operating temperature from 125 to 150 in Absolute Maximum Ratings ........................................... 7  
Added Junction temperature spec to Absolute Maximum Ratings .................................................................... 7  
Removed OPA375 Table of Graphs and OPA2375 Table of Graphs tables from the Specifications section....12  
Removed Related Links section from the Device and Documentation Support section...................................39  
Changes from Revision B (January 2020) to Revision C (June 2020)  
Page  
OPA2375S X2QFN (RUG) 封装从预发更改为正在供........................................................................... 1  
Added X2QFN Package Drawing and Pin Functions for OPA2375S in Pin Configuration and Functions  
section................................................................................................................................................................ 5  
Changed typical input current noise density value from 2 fAHZ to 23 fAHz................................................9  
Changed total supply voltage total from 5V to 5.5V in Electrical Characteristics condition statement............... 9  
Deleted "Vs = 2.25 V to 5.5 V" test conditions for common-mode rejection ratio parameter in Electrical  
Characteristics ...................................................................................................................................................9  
Changes from Revision A (January 2019) to Revision B (January 2020)  
Page  
• 更改了部分的“低宽带噪声”规格以便OPA2375 规格匹配................................................................... 1  
• 向部分添加THD+N 规格.........................................................................................................................1  
• 在部分中添加OPA2375 OPA4375 IQ 定义.................................................................................... 1  
• 在部分中添加OPA2375 OPA4375 的电源电压范围定义....................................................................1  
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OPA375, OPA2375  
ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
www.ti.com.cn  
• 将首页上的噪声频谱密度与频率间的关系图更改OPA2375 噪声图.................................................................1  
• 更改了部分的措辞以反映整OPAx375 系列.............................................................................................1  
• 向器件信表中添加OPA2375 器件.............................................................................................................. 1  
Added Device Comparison Table section...........................................................................................................4  
Added pin out drawings for OPA2375 packages in Pin Configuration and Functions section............................5  
Added pin functions for OPA2375 packages...................................................................................................... 5  
Changed Human-body model (HBM) value from: ±1000 to ±3000 and Charged-device mode (CDM) value  
from ±250 to ±1000.............................................................................................................................................7  
Added OPA2375 typical characteristic graphs in the Specifications section.................................................... 12  
Added EMI Rejection section with description information to Detailed Description section............................. 27  
Added Electrical Overstress section and diagram to Detailed Description section.......................................... 28  
Added Typical Specification and Distributions section to Detailed Description section.................................... 29  
Added Shutdown Function section with description for OPAx375S to Detailed Description section................ 30  
Added Packages With an Exposed Thermal Pad section to Detailed Description section...............................30  
Added dual channel layout example in the Layout section...............................................................................37  
Changes from Revision * (November 2017) to Revision A (January 2019)  
Page  
Added maximum input offset voltage drift specification in Electrical Characteristics .........................................9  
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OPA375, OPA2375  
ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
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5 Device Comparison Table  
PACKAGE LEADS  
NO. OF  
DEVICE  
SOIC  
D
SC-70  
DCK  
VSSOP  
DGK  
WSON  
DSG  
TSSOP  
PW  
SOT-23  
DDF  
X2QFN  
RUG  
CHANNELS  
OPA375  
1
2
5
10  
8
8
8
8
8
OPA2375  
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OPA375, OPA2375  
ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
www.ti.com.cn  
6 Pin Configuration and Functions  
IN+  
Vœ  
1
2
3
5
V+  
INœ  
4
OUT  
Not to scale  
6-1. OPA375 DCK Package  
5-Pin SC70  
Top View  
6-1. Pin Functions: OPA375  
PIN  
I/O  
DESCRIPTION  
NAME  
+IN  
NO.  
1
I
Noninverting input  
3
I
Inverting input  
IN  
OUT  
V+  
4
O
Output  
5
Positive (highest) supply  
2
Negative (lowest) supply or ground (for single-supply operation)  
V–  
OUT1  
1
2
3
4
8
7
6
5
V+  
OUT1  
IN1œ  
IN1+  
Vœ  
1
2
3
4
8
7
6
5
V+  
IN1œ  
IN1+  
Vœ  
OUT2  
IN2œ  
IN2+  
OUT2  
IN2œ  
IN2+  
Thermal  
Pad  
Not to scale  
Not to scale  
6-2. OPA2375 D, DGK, PW, and DDF Package  
8-Pin SOIC, VSSOP, TSSOP, and SOT-23  
Top View  
Connect thermal pad to V. See 8.3.8 for more information.  
6-3. OPA2375 DSG Package  
8-Pin WSON With Exposed Thermal Pad  
Top View  
6-2. Pin Functions: OPA2375  
PIN  
I/O  
DESCRIPTION  
NAME  
IN1–  
NO.  
2
I
I
Inverting input, channel 1  
IN1+  
IN2–  
IN2+  
OUT1  
OUT2  
V–  
3
Noninverting input, channel 1  
Inverting input, channel 2  
6
I
5
I
Noninverting input, channel 2  
Output, channel 1  
1
O
O
7
Output, channel 2  
4
Negative (lowest) supply or ground (for single-supply operation)  
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ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
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6-2. Pin Functions: OPA2375 (continued)  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
V+  
8
Positive (highest) supply  
Vœ  
SHDN1  
SHDN2  
IN2+  
1
2
3
4
9
8
7
6
IN1œ  
OUT1  
V+  
OUT2  
Not to scale  
6-4. OPA2375S RUG Package  
10-Pin X2QFN  
Top View  
6-3. Pin Functions: OPA2375S  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
9
10  
5
I
I
Inverting input, channel 1  
Noninverting input, channel 1  
Inverting input, channel 2  
Noninverting input, channel 2  
Output, channel 1  
IN1–  
IN1+  
I
IN2–  
IN2+  
4
I
OUT1  
OUT2  
8
O
O
6
Output, channel 2  
Shutdown: low = amp disabled, high = amp enabled. Channel 1. See 8.3.7 for more  
information.  
SHDN1  
SHDN2  
2
3
I
I
Shutdown: low = amp disabled, high = amp enabled. Channel 2. See 8.3.7 for more  
information.  
1
7
Negative (lowest) supply or ground (for single-supply operation)  
Positive (highest) supply  
V–  
I or —  
V+  
I
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ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
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7 Specifications  
7.1 Absolute Maximum Ratings  
over operating ambient temperature range (unless otherwise noted) (1)  
MIN  
0
MAX  
6
UNIT  
V
Supply voltage, VS = (V+) (V)  
Common-mode voltage (3) (4)  
(V+) + 0.5  
VS + 0.2  
10  
V
(V) 0.5  
Signal input pins  
Differential voltage (3)  
Current (3)  
V
mA  
10  
55  
65  
Output short-circuit (2)  
Continuous  
Operating ambient temperature, TA  
Junction temperature, TJ  
Storage temperature, Tstg  
150  
150  
150  
°C  
°C  
°C  
(1) Operating the device beyond the ratings listed under Absolute Maximum Ratings will cause permanent damage to the device. These  
are stress ratings only, based on process and design limitations, and this device has not been designed to function outsdie the  
conditions indicated under Recommended Operating Conditions. Exposure to any condition outside Recommended Operating  
Conditions for extended periods, including absolute-maximum-rated conditions, may affect device reliability and performance.  
(2) Short-circuit to ground, one amplifier per package.  
(3) Input pins are diode-clamped to the power-supply rails. Input signals that may swing more than 0.5 V beyond the supply rails must be  
current limited to 10 mA or less.  
(4) Differential input voltages greater than 0.25 V applied continuously can result in a shift to the input offset voltage above the maximum  
specification of this parameter. The magnitude of this effect increases as the ambient operating temperature rises.  
7.2 ESD Ratings  
VALUE  
±3000  
±2000  
UNIT  
OPA375: Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)  
OPA2375: Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)  
V(ESD)  
Electrostatic discharge  
V
All Devices: Charged-device model (CDM), per JEDEC specification JESD22-C101  
±1500  
(2)  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
7.3 Recommended Operating Conditions  
over operating ambient temperature range (unless otherwise noted)  
MIN  
1.7(1)  
2.25  
MAX  
UNIT  
VS  
VS  
VI  
5.5  
5.5  
V
V
Supply voltage, (V+) (V) , for OPA2375 and OPA4375  
Supply voltage, (V+) (V), for OPA375 only  
Input voltage range  
V
(V)  
40  
(V+) 1.2  
125  
TA  
Specified temperature  
°C  
(1) Operation between 1.7 V and 1.8 V is only recommened for TA = 0 - 85℃  
7.4 Thermal Information for Single Channel  
THERMAL METRIC (1)  
OPA375  
DCK  
(SC70)  
UNIT  
5 PINS  
240.9  
151.7  
64  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
/W  
/W  
/W  
/W  
/W  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
34.8  
63.3  
ψJB  
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ZHCSH34E NOVEMBER 2017 REVISED AUGUST 2021  
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7.4 Thermal Information for Single Channel (continued)  
OPA375  
DCK  
(SC70)  
THERMAL METRIC (1)  
UNIT  
5 PINS  
RθJC(bot)  
Junction-to-case (bottom) thermal resistance  
n/a  
/W  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report SPRA953C.  
7.5 Thermal Information for Dual Channel  
OPA2375, OPA2375S  
D
DDF  
(SOT-23-8)  
DSG  
(WSON)  
PW  
(TSSOP)  
DGK  
(VSSOP)  
RUG  
(X2QFN)  
THERMAL METRIC (1)  
UNIT  
(SOIC)  
8 PINS  
8 PINS  
8 PINS  
8 PINS  
8 PINS  
10 PINS  
Junction-to-ambient thermal  
resistance  
RθJA  
131.1  
153.8  
78.2  
185.6  
177.0  
140.3  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction-to-case (top) thermal  
resistance  
RθJC(top)  
73.2  
74.5  
24.4  
73.3  
n/a  
80.2  
73.1  
6.6  
97.5  
44.6  
4.7  
74.5  
116.3  
12.6  
114.6  
n/a  
68.6  
98.7  
12.4  
97.1  
n/a  
52.6  
69.7  
1.0  
Junction-to-board thermal  
resistance  
RθJB  
Junction-to-top  
characterization parameter  
ψJT  
Junction-to-board  
characterization parameter  
72.7  
n/a  
44.6  
19.8  
67.5  
n/a  
ψJB  
Junction-to-case (bottom)  
thermal resistance  
RθJC(bot)  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953C.  
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7.6 Electrical Characteristics  
OPA2375/4375 Specifications: VS = (V+) (V) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V) at TA = 25°C, RL = 10 kconnected  
to VS / 2, VCM = VS / 2, and VO UT = VS / 2, unless otherwise noted.  
OPA375 Specifications: VS = (V+) (V) = 5.5 V at TA = 25°C, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VO UT  
VS / 2, unless otherwise noted.  
=
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
OFFSET VOLTAGE  
±0.15  
±0.5  
±0.7  
±2(4)  
VOS  
Input offset voltage  
VS = 5.0 V  
mV  
OPA2/4375(3)  
OPA375(2)  
TA = 40°C to 125°C  
TA = 40°C to 125°C  
±0.35  
±0.16  
±0.32  
±0.7  
dVOS/dT  
PSRR  
Input offset voltage drift  
µV/℃  
OPA2/4375(3)  
OPA375(2)  
±6.3  
±5.8  
VS = 2.25 V to 5.5 V, VCM = V–  
VVCM = V–  
Input offset voltage  
versus power supply  
μV/V  
OPA2/4375(3)  
Channel separation  
f = 20 kHz  
130  
dB  
INPUT BIAS CURRENT  
OPA375(2)  
±10  
±3  
IB  
Input bias current  
OPA2/4375(3)  
OPA375(2)  
pA  
±10  
±0.5  
IOS  
Input offset current  
Input voltage noise  
OPA2/4375(3)  
NOISE  
EN  
1.2  
0.227  
30  
μVPP  
f = 0.1 to 10 Hz  
f = 10 Hz  
µVRMS  
OPA2/4375(3)  
OPA375(2)  
5.0  
f = 1 kHz  
Input voltage noise  
density  
eN  
OPA2/4375(3)  
OPA375(2)  
4.6  
nV/Hz  
3.7  
f = 10 kHz  
f = 1 kHz  
OPA2/4375(3)  
3.5  
iN  
Input current noise  
23  
fA/Hz  
INPUT VOLTAGE RANGE  
Common-mode voltage  
range  
VCM  
(V+) -1.2  
V
(V)  
OPA375(2)  
95  
87  
94  
120  
100  
110  
(V) < VCM < (V+) 1.2 V  
Common-mode  
rejection ratio  
CMRR  
dB  
VS = 1.8 V, (V) < VCM < (V+) 1.2 V  
VS = 5.5, (V) < VCM < (V+) 1.2 V  
OPA2/4375(3)  
INPUT CAPACITANCE  
ZID  
Differential  
10 || 6  
10 || 6  
MΩ|| pF  
GΩ|| pF  
ZICM  
Common-mode  
OPEN-LOOP GAIN  
(V) + 40 mV < VO < (V+) 40 mV, RL = 10 kΩ  
125  
130  
130  
140  
132  
142  
to VS/2  
OPA375(2)  
(V) + 150 mV < VO < (V+) 150 mV, RL = 2  
kto VS/2  
110  
107  
VS= 1.8 V, (V) + 150 mV < VO < (V+) 150  
mV, RL = 2 kto VS/2  
AOL  
Open-loop voltage gain  
dB  
VS= 5.5 V, (V) + 150 mV < VO < (V+) 150  
mV, RL = 2 kto VS/2  
OPA2/4375(3)  
VS = 1.8 V, (V) + 40m V < VO < (V+) 40 mV,  
RL = 10 kto VS/2  
110  
VS = 5.5 V, (V) + 40m V < VO < (V+) 40 mV,  
RL = 10 kto VS/2  
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OPA2375/4375 Specifications: VS = (V+) (V) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V) at TA = 25°C, RL = 10 kconnected  
to VS / 2, VCM = VS / 2, and VO UT = VS / 2, unless otherwise noted.  
OPA375 Specifications: VS = (V+) (V) = 5.5 V at TA = 25°C, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VO UT  
VS / 2, unless otherwise noted.  
=
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
FREQUENCY RESPONSE  
GBW  
SR  
Gain-bandwidth product  
10  
MHz  
Slew rate  
VS = 5.5 V, G = +1, CL = 20 pF  
4.6  
V/μs  
To 0.1%, VS = 5.5 V, VSTEP = 2 V, G = +1, CL =  
20pF  
0.65  
1.2  
tS  
Settling time  
Phase margin  
μs  
To 0.01%, VS = 5.5 V, VSTEP = 2 V, G = +1, CL =  
20pF  
55  
0.2  
°
G = +1, RL = 10k, CL = 20 pF  
Overload recovery time VIN × gain > VS  
μs  
OPA375(2)  
0.00035  
0.00015  
VS = 5.5 V, VCM = 2.5 V, VO = 1 VRMS, G = +1, f =  
1 kHz, RL = 10 kΩ  
Total harmonic  
distortion + noise  
THD+N  
%
OPA2/4375(3)  
Electro-magnetic  
interference rejection  
ratio  
EMIRR  
f = 1 GHz  
OPA2/4375(3)  
OPA375(2)  
51  
dB  
OUTPUT  
Positive/Negative rail  
headroom  
VS = 5.5 V, RL = 10k  
8
10  
VS = 5.5 V, RL = no load  
VS = 5.5 V, RL = 2 kΩ  
VS = 5.5 V, RL = 10 kΩ  
VS = 5.5 V, RL = no load  
7
35  
14  
7
Positive rail headroom  
Voltage output swing  
from rail  
mV  
mA  
5
OPA2/4375(3)  
OPA2/4375(3)  
35  
14  
Negative rail headroom VS = 5.5 V, RL = 2 kΩ  
VS = 5.5 V, RL = 10 kΩ  
5
ISC  
Short-circuit current  
Capacitive load drive  
±68  
See 图  
7-58  
CLOAD  
f = 10 MHz, IO = 0 A  
f = 2 MHz, IO = 0 A  
OPA375(2)  
160  
165  
Open-loop output  
impedance  
ZO  
OPA2/4375(3)  
POWER SUPPLY  
890  
990  
10  
OPA375(2)  
1100  
1200  
1250  
TA = 40°C to 125°C  
Quiescent current per  
amplifier  
IQ  
VS = 5.5 V, IO = 0 A  
µA  
OPA2/4375(3)  
TA = 40°C to 125°C  
Turn-On Time  
At TA = 25°C, VS = 5.5 V, VS ramp rate > 0.3 V/µs OPA2/4375(3)  
μs  
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OPA2375/4375 Specifications: VS = (V+) (V) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V) at TA = 25°C, RL = 10 kconnected  
to VS / 2, VCM = VS / 2, and VO UT = VS / 2, unless otherwise noted.  
OPA375 Specifications: VS = (V+) (V) = 5.5 V at TA = 25°C, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VO UT  
VS / 2, unless otherwise noted.  
=
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
SHUTDOWN  
Quiescent current per  
amplifier  
IQSD  
1
3.5  
µA  
All amplifiers disabled, SHDN = V–  
Output impedance  
during shutdown  
ZSHDN  
Amplifier disabled  
10 || 6  
GΩ|| pF  
Logic high threshold  
voltage (amplifier  
enabled)  
(V) + 1.1  
VIH  
V
V
Logic low threshold  
voltage (amplifier  
disabled)  
(V) + 0.2  
VIL  
V
Amplifier enable time  
(full shutdown) (1)  
G = +1, VCM = V-, VO = 0.1 × VS/2  
G = +1, VCM = V-, VO = 0.1 × VS/2  
15  
8
tON  
Amplifier enable time  
(partial shutdown)(1)  
µs  
tOFF  
Amplifier disable time (1) VCM = V-, VO = VS/2  
3
0.4  
(V+) SHDN (V) + 0.9 V  
(V) SHDN (V) + 0.7 V  
SHDN pin input bias  
current (per pin)  
µA  
0.25  
(1) Disable time (tOFF) and enable time (tON) are defined as the time interval between the 50% point of the signal applied to the SHDN pin  
and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level.  
(2) This electrical characteristic only applies to the single-channel, OPA375  
(3) This electrical characteristic only applies to the dual-channel OPA2375 and quad-channel OPA4375  
(4) Specified by design and characterization; not production tested  
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7.7 Typical Characteristics: OPA375  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
40%  
80  
70  
60  
50  
40  
30  
20  
10  
0
35%  
30%  
25%  
20%  
15%  
10%  
5%  
0
0.4  
0.8  
1.2  
Offset Voltage Drift (mV/èC)  
7-2. Offset Voltage Drift Distribution  
1.6  
2
2.4  
2.8  
D001  
D002  
Offset Voltage(µV)  
7-1. Offset Voltage Production Distribution  
200  
100  
0
6
4
2
-100  
-200  
-300  
-400  
0
-2  
-4  
-6  
-60 -40 -20  
0
20  
40  
60  
80 100 120 140  
-4  
-3  
-2  
-1  
0
Input Common Mode Voltage (V)  
1
2
3
4
Temperature (èC)  
D003  
D004  
7-3. Offset Voltage vs Temperature  
7-4. Offset Voltage vs Common-Mode Voltage  
0.5  
0.4  
0.3  
0.2  
0.1  
0
300  
200  
100  
0
-100  
-200  
-300  
-400  
-500  
-0.1  
-0.2  
-0.3  
-0.4  
-0.5  
-2.5  
-2  
-1.5  
-1  
-0.5  
0
0.5  
Input Common Mode Voltage (V)  
1
1.5  
2
1.5  
2.5  
3.5  
VS (V)  
4.5  
5.5  
D004  
D005  
7-5. Offset Voltage vs Common-Mode Voltage  
7-6. Offset Voltage vs Power Supply  
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7.7 Typical Characteristics: OPA375 (continued)  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
8
6
20  
IB-  
IB+  
IOS  
IB-  
IB+  
IOS  
0
4
-20  
-40  
-60  
-80  
-100  
-120  
2
0
-2  
-4  
-6  
-8  
-4  
-3  
-2  
-1  
0
VCM (V)  
1
2
3
4
0
50  
100  
Temperature (èC)  
150  
D043  
D044  
7-7. IB and IOS vs Common-Mode Voltage  
7-8. IB and IOS vs Temperature  
100  
100  
75  
40  
30  
75  
50  
25  
0
20  
50  
10  
25  
0
0
-10  
-20  
-30  
-40  
-25  
-50  
-75  
-25  
-50  
-75  
Gain = -1  
Gain = 10  
Gain = +1  
Gain  
Phase  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
D006  
D007  
CL = 10 pF  
7-9. Open-Loop Gain and Phase vs Frequency  
7-10. Closed-Loop Gain vs Frequency  
120  
3
PSRR- (dB)  
PSRR+ (dB)  
2.5  
2
100  
80  
60  
40  
20  
0
1.5  
1
-40°C  
125°C  
25°C  
85°C  
0.5  
0
-0.5  
-1  
85°C  
25°C  
-40°C  
125°C  
-1.5  
-2  
-2.5  
-3  
1k  
10k  
100k  
1M  
10  
15  
20  
25  
30  
35  
40  
Output Current (mA)  
45  
50  
55  
60  
Frequency (Hz)  
D011  
D010  
7-12. PSRR vs Frequency (Referred to Input)  
7-11. VO vs I Sourcing and Sinking  
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7.7 Typical Characteristics: OPA375 (continued)  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
5
0
-5  
-10  
1k  
10k  
100k  
1M  
-50  
0
50  
Temperature (èC)  
100  
150  
Frequency (Hz)  
D011  
D012  
VCM = 0 V to 4.3  
V
TA = 40°C to  
125°C  
VS = 5.5 V  
7-13. CMRR vs Frequency (Referred to Input)  
7-14. CMRR vs Temperature  
100  
10  
1
10  
100  
1k  
Frequency (Hz)  
10k  
100k  
Time (1 s/div)  
D015  
D014  
7-16. Input Voltage Noise Spectral Density vs Frequency  
7-15. 0.1-Hz to 10-Hz Flicker Noise  
-95  
-95  
-97  
-99  
-97  
-99  
-101  
-101  
-103  
-105  
-103  
-105  
100  
1k  
Frequency (Hz)  
10k  
100  
1k  
Frequency (Hz)  
10k  
D017  
D017  
VS = 5.5 V  
Gain = 1  
VICM = 2.5 V  
BW = 80 kHz  
VS = 5.5 V  
Gain = 1  
VICM = 2.5 V  
RL = 2 kΩ  
RL = 10 kΩ  
VOUT = 0.5 Vrms  
BW = 80 kHz VOUT = 0.5 Vrms  
7-17. THD + N vs Frequency  
7-18. THD + N vs Frequency  
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7.7 Typical Characteristics: OPA375 (continued)  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
0
1000  
950  
900  
850  
800  
750  
700  
650  
600  
550  
500  
Gain = +1, RL = 2 kW  
Gain = +1, RL = 10 kW  
Gain = -1, RL = 2 kW  
Gain = -1, RL = 10 kW  
-20  
-40  
-60  
-80  
-100  
-120  
0.001  
0.01  
0.1  
VOUT (rms)  
1
5
1.5  
2
2.5  
3
3.5  
4
Supply Voltage (V)  
4.5  
5
5.5  
D018  
D020  
VS = 5.5 V  
VICM = 2.5 V  
VOUT = 0.5 Vrms  
7-19. THD + N vs Amplitude  
BW = 80 kHz  
7-20. Quiescent Current vs Supply Voltage  
1000  
950  
10  
9
8
7
6
5
4
3
2
1
0
AVDD = 5.5 V  
AVDD = 1.8 V  
900  
850  
800  
750  
700  
650  
600  
550  
500  
-50  
0
50  
Temperature (èC)  
100  
150  
-60 -40 -20  
0
20  
40  
60  
80 100 120 140  
Temperature (èC)  
D021  
D022  
RL = 2 kΩ  
7-21. Quiescent Current vs Temperature  
7-22. Open-Loop Gain vs Temperature  
1000  
100  
10  
200  
160  
120  
80  
40  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
Output Voltage (V)  
C023  
D024  
VICM = VOCM = 2.75  
V
AVDD = 5.5 V  
7-23. Open-Loop Gain vs Output Voltage  
7-24. Open-Loop Output Impedance vs Frequency  
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7.7 Typical Characteristics: OPA375 (continued)  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
Overshoot (+)  
Overshoot (-)  
Overshoot (+)  
Overshoot (-)  
0
10  
20  
30  
40  
Capacitive Load (pF)  
50  
60  
70  
80  
90 100  
0
10  
20  
30  
40  
Capacitance (pF)  
50  
60  
70  
80  
90 100  
D025  
D025  
VS = 5.5 V  
G = 1  
VICM = 2.75 V  
VOCM = 2.75 V  
VS = 1.8 V  
G = 1  
VICM = 0.9 V  
VOCM = 0.9 V  
100-mV output step  
100-mV output step  
7-25. Small-Signal Overshoot vs Load Capacitance  
7-26. Small-Signal Overshoot vs Load Capacitance  
50  
50  
40  
30  
20  
10  
40  
30  
20  
10  
Overshoot (+)  
Overshoot (-)  
Overshoot (+)  
Overshoot (-)  
0
0
0
10  
20  
30  
40  
Capacitive Load (pF)  
50  
60  
70  
80  
90 100  
0
10  
20  
30  
40  
Capacitance (pF)  
50  
60  
70  
80  
90 100  
D025  
D025  
VS = 5.5 V  
VICM = 2.75 V  
VOCM = 2.75 V  
VS = 1.8 V  
VICM = 0.9 V  
VOCM = 0.9 V  
100-mV output step  
100-mV output step  
Gain = 1  
Gain = 1  
7-27. Small-Signal Overshoot vs Load Capacitance  
7-28. Small-Signal Overshoot vs Load Capacitance  
Input  
Output  
Input  
Output  
Time (2 ms/div)  
Time (25 ms/div)  
D028  
D027  
7-30. Overload Recovery  
7-29. No Phase Reversal  
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7.7 Typical Characteristics: OPA375 (continued)  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
VIN  
VOUT  
VIN  
VOUT  
Time (1 ms/div)  
Time (2 ms/div)  
D030  
D031  
VS = 1.8 V  
CL = 30 pF  
VICM = 0.9 V  
Gain = 1  
VOCM = 0.9 V  
VS = 5.5 V  
VOCM = 2.75 V  
Gain = 1  
CL = 10 pF  
2-V step  
VIN = 100 mVpp  
VICM = 2.75 V  
7-31. Small-Signal Step Response  
7-32. Large Signal Step Response  
Time (0.2 ms/div)  
Time (0.1 ms/div)  
D032  
D033  
VS = 5.5 V  
CL = 0  
VICM = 2.75 V  
Gain = 1  
VOCM = 2.75 V  
5-V step  
VS = 5.5 V  
CL = 0  
VICM = 2.75 V  
Gain = 1  
VOCM = 2.75 V  
5-V step  
7-33. Large Signal Settling Time (Positive)  
7-34. Large Signal Settling Time (Negative)  
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7.7 Typical Characteristics: OPA375 (continued)  
at TA = 25°C, VS = 5.5 V, RL = 10 kconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)  
100  
80  
6
5
4
3
2
1
0
Sourcing  
Sinking  
VS = 1.8 V  
VS = 5.5 V  
60  
40  
20  
0
-20  
-40  
-60  
-80  
-100  
-50  
0
50  
Temperature (èC)  
100  
150  
1
10  
100  
1k  
10k  
Frequency (Hz)  
100k  
1M  
10M 100M  
D034  
D035  
VICM = VS / 2  
Gain = 1  
VOCM = VS / 2  
CL = 10 pF  
7-35. Short-Circuit Current vs Temperature  
7-36. Maximum Output Voltage vs Frequency  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
60  
40  
VS = 1.8 V  
VS = 5.5 V  
20  
10M  
100M  
Frequency (Hz)  
1G  
10G  
0
20  
40  
60  
Capacitive Load (pF)  
D036  
D037  
VICM = VOCM = VS / 2  
7-37. Electromagnetic Interference Rejection Ratio Referred  
7-38. Phase Margin vs Capacitive Load  
to Noninverting Input (EMIRR+) vs Frequency  
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7.8 Typical Characteristics: OPA2375  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
2500  
2250  
2000  
1750  
1500  
1250  
1000  
750  
22  
20  
18  
16  
14  
12  
10  
8
6
4
500  
2
250  
0
0
-500 -400 -300 -200 -100  
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5  
0
Offset Voltage (µV)  
100 200 300 400 500  
D002  
Offset Voltage Drift (mV/èC)  
D001  
VCM = V–  
7-40. Offset Voltage Drift Distribution  
7-39. Offset Voltage Production Distribution  
200  
4800  
4000  
3200  
2400  
1600  
800  
160  
120  
80  
40  
0
0
-40  
-80  
-120  
-160  
-200  
-800  
-1600  
-2400  
-3200  
-4000  
-40  
-20  
0
20  
40  
60  
80  
100 120 140  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
Temperature (èC)  
D003  
D004  
VCM = V+  
VCM = V–  
7-42. Offset Voltage vs Temperature (NMOS Input Pair)  
7-41. Offset Voltage vs Temperature (PMOS Input Pair)  
5000  
4000  
3000  
2000  
1000  
0
200  
160  
120  
80  
40  
0
-40  
-80  
-120  
-160  
-200  
-1000  
-2000  
-3000  
-4000  
-3 -2.4 -1.8 -1.2 -0.6  
0
Input Common Mode Voltage (V)  
0.6 1.2 1.8 2.4  
3
-3 -2.5 -2 -1.5 -1 -0.5  
0
0.5  
Input Common Mode Voltage (V)  
1
1.5  
2
D005  
D006  
Over full common-mode voltage range  
7-43. Offset Voltage vs Common-Mode Voltage (Full Range)  
7-44. Offset Voltage vs Common-Mode Voltage (PMOS Input  
Pair)  
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7.8 Typical Characteristics: OPA2375 (continued)  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
300  
4000  
240  
3000  
180  
2000  
120  
1000  
0
60  
0
-60  
-1000  
-2000  
-3000  
-4000  
-120  
-180  
-240  
-300  
1.8  
1.9  
2
2.1  
2.2  
Input Common Mode Voltage (V)  
2.3  
2.4  
1.5  
2
2.5  
3
3.5  
4
Supply Voltage (V)  
4.5  
5
5.5  
6
D007  
D008  
7-45. Offset Voltage vs Common-Mode Voltage (Transition  
7-46. Offset Voltage vs Power Supply  
Region)  
50  
40  
30  
20  
10  
0
320  
280  
240  
200  
160  
120  
80  
IB-  
IB+  
IOS  
-10  
-20  
40  
-30  
IB-  
IB+  
IOS  
0
-40  
-50  
-3 -2.5 -2 -1.5 -1 -0.5  
VCM (V)  
-40  
-40  
0
0.5  
1
1.5  
2
2.5  
3
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D009  
D010  
7-47. IB and IOS vs Common-Mode Voltage  
7-48. IB and IOS vs Temperature  
100  
70  
50  
30  
20  
10  
7
5
3
2
1
10  
Time (1 s/div)  
100  
1k  
Frequency (Hz)  
10k  
100k  
D011  
D012  
7-49. 0.1-Hz to 10-Hz Flicker Noise  
7-50. Input Voltage Noise Spectral Density vs Frequency  
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7.8 Typical Characteristics: OPA2375 (continued)  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
130  
110  
90  
120  
115  
110  
105  
100  
CMRR  
PSRR+  
PSRR-  
70  
50  
30  
10  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
D014  
D013  
VS = 5.5 V, VCM = Vto (V+) 1.2 V  
7-52. CMRR vs Temperature  
7-51. CMRR and PSRR vs Frequency (Referred to Input)  
130  
120  
210  
Gain  
Phase  
100  
80  
60  
40  
20  
0
180  
150  
120  
90  
125  
120  
115  
110  
60  
30  
-20  
0
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
D015  
D016  
CL = 10 pF  
VCM = V–  
7-54. Open-Loop Gain and Phase vs Frequency  
7-53. PSRR vs Temperature  
80  
60  
0.66  
0.6  
VS=1.8V RL=10kW  
VS=1.8V RL=2kW  
VS=5.5V RL=10kW  
VS=5.5V RL=2kW  
0.54  
0.48  
0.42  
0.36  
0.3  
40  
20  
0
-20  
-40  
-60  
-80  
0.24  
0.18  
0.12  
0.06  
G = 1  
G = -1  
G = 10  
G = 100  
G = 1000  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D017  
D018  
CL = 10 pF  
7-55. Closed-Loop Gain vs Frequency  
7-56. Open-Loop Gain vs Temperature  
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7.8 Typical Characteristics: OPA2375 (continued)  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
180  
160  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
60  
40  
20  
0
-20  
-0.5  
0.5  
1.5  
2.5 3.5  
Output Voltage (V)  
4.5  
5.5  
10  
20  
30  
40  
50  
Capacitive Load (pF)  
60  
70  
80  
90  
100  
D019  
D020  
7-57. Open-Loop Gain vs Output Voltage  
7-58. Phase Margin vs Capacitive Load  
4
3
60  
50  
40  
30  
20  
10  
0
Input  
Output  
RISO = 0W, Overshoot (-)  
RISO = 0W,Overshoot (+)  
RISO = 50W, Overshoot (-)  
RISO = 50W,Overshoot (+)  
2
1
0
-1  
-2  
-3  
-4  
0
20  
40 60  
Capacitive Load (pF)  
80  
100  
Time (10 µs/div)  
D021  
D022  
VCM = VS / 2, RL = 1 kΩ  
Gain = 1, 100-mV output step  
7-59. No Phase Reversal  
7-60. Small-Signal Overshoot vs Load Capacitance  
5
70  
RISO = 0W, Overshoot (-)  
RISO = 0W,Overshoot (+)  
RISO = 50W, Overshoot (-)  
RISO = 50W,Overshoot (+)  
60  
50  
40  
30  
20  
10  
0
2.5  
0
-2.5  
Input  
Output  
-5  
Time (10 µs/div)  
0
25  
50 75  
Capacitive Load (pF)  
100  
125  
D024  
D023  
VIN = 0.6 Vpp, G = 10, VIN × gain > VS  
7-62. Overload Recovery  
VCM = VS / 2, RL = 1 kΩ  
Gain = +1, 100-mV output step  
7-61. Small-Signal Overshoot vs Load Capacitance  
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7.8 Typical Characteristics: OPA2375 (continued)  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
0.1  
0.08  
0.06  
0.04  
0.02  
0
0.1  
0.08  
0.06  
0.04  
0.02  
0
Input  
Output  
Input  
Output  
-0.02  
-0.04  
-0.06  
-0.08  
-0.1  
-0.02  
-0.04  
-0.06  
-0.08  
-0.1  
Time (1 µs/div)  
Time (1 µs/div)  
D025  
D027  
CL = 20 pF, Gain = 1, VIN = 100-mVpp, RL = 1 kΩ  
7-63. Small-Signal Step Response  
CL = 20 pF, Gain = 1, VIN = 100-mVpp, RL = 1 kΩ  
7-64. Small-Signal Step Response  
1.25  
1
1.25  
1
Input  
Output  
Input  
Output  
0.75  
0.5  
0.75  
0.5  
0.25  
0
0.25  
0
-0.25  
-0.5  
-0.75  
-1  
-0.25  
-0.5  
-0.75  
-1  
-1.25  
-1.25  
Time (1 µs/div)  
Time (1 µs/div)  
D026  
D028  
CL = 20 pF, Gain = +1, VIN = 2-V step, RL = 1 kΩ  
7-65. Large Signal Step Response  
CL = 20 pF, Gain = 1, VIN = 2-V step, RL = 1 kΩ  
7-66. Large Signal Step Response  
0.1% Settling Time  
0.1% Settling Time  
Step Applied at t = 0  
Step Applied at t = 0  
Time (0.25 ms/div)  
Time (0.25 ms/div)  
D029  
D050  
CL = 20 pF, Gain = 1, VIN = 2-V step  
CL = 20 pF, Gain = 1, VIN = 2-V step  
7-67. Large Signal Settling Time (Positive)  
7-68. Large Signal Settling Time (Negative)  
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7.8 Typical Characteristics: OPA2375 (continued)  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
-80  
-84  
-40  
RL = 600 W  
RL = 2 kW  
RL = 10 kW  
-88  
-60  
-92  
-96  
-100  
-104  
-108  
-112  
-116  
-120  
-80  
-100  
RL = 10 kW  
RL = 2 kW  
RL = 600 W  
-120  
100  
1k  
Frequency (Hz)  
10k  
1m  
10m  
100m  
VOUT (rms)  
1
D030  
D031  
VCM = 2.5 V  
VCM = 2.5 V  
Gain = +1, BW = 80 kHz, VOUT = 0.5 Vrms  
BW = 80 kHz  
7-69. THD + N vs Frequency  
7-70. THD + N vs Amplitude  
3
2.8  
2.6  
2.4  
2.2  
2
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-40è  
-40è  
25è  
25è  
85è  
125è  
85è  
125è  
1.8  
1.6  
1.4  
1.2  
1
-1.2  
-1.4  
-1.6  
-1.8  
-2  
0.8  
0.6  
0.4  
0.2  
0
-2.2  
-2.4  
-2.6  
-2.8  
-3  
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80  
Output Current (mA)  
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80  
Output Current (mA)  
D032  
D033  
7-71. VOUT vs Sourcing Current  
7-72. VOUT vs Sinking Current  
6
5
4
3
2
1
0
80  
75  
70  
65  
60  
55  
50  
1
10  
100  
1k  
10k  
Frequency (Hz)  
100k  
1M  
10M 100M  
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D034  
D035  
CL = 10 pF, Gain = +1, VS= 5.5 V  
7-73. Maximum Output Voltage vs Frequency  
7-74. Short-Circuit Current vs Temperature  
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7.8 Typical Characteristics: OPA2375 (continued)  
at TA = 25°C, VS = ±2.75 V, RL = 10 kΩconnected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.  
1000  
990  
980  
970  
960  
950  
940  
930  
920  
910  
900  
1000  
990  
980  
970  
960  
950  
940  
930  
920  
910  
900  
1.5  
2
2.5  
3
3.5  
Supply Voltage (V)  
4
4.5  
5
5.5  
6
-40  
-20  
0
20  
40 60  
Temperature (°C)  
80  
100 120 140  
D036  
D037  
7-75. Quiescent Current vs Supply Voltage  
7-76. Quiescent Current vs Temperature  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
-130  
-140  
-150  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
100  
1k  
10k 100k  
Frequency (Hz)  
1M  
10M  
D038  
D040  
7-77. Open-Loop Output Impedance vs Frequency  
AVDD = 5.5 V, VICM = VOCM = 2.75 V  
7-78. Channel Separation vs Frequency  
120  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
0.5  
-0.5  
Supply Voltage  
Output  
100  
80  
60  
40  
20  
0
10M  
100M  
Frequency (Hz)  
1G  
10G  
Time (5 ms/div)  
D039  
D041  
7-79. Electromagnetic Interference Rejection Ratio Referred  
VS = 0 to 5.5 V, VOUT = 0 to 2.75 V  
to Noninverting Input (EMIRR+) vs Frequency  
7-80. Turn-On Time  
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8 Detailed Description  
8.1 Overview  
The OPAx375 family is an ultra low-noise, rail-to-rail output operational amplifier. The device operates from a  
supply voltage of 2.25 V to 5.5 V (OPA375) and 1.7 V to 5.5 V (OPA2375 and OPA4375), are unity-gain stable,  
and suitable for a wide range of general-purpose applications. The input common-mode voltage range includes  
the negative rail and allows the OPAx375 op amp family to be used in most single-supply applications. Rail-to-  
rail output swing significantly increases dynamic range, especially in low-supply applications, and makes it  
suitable for many audio applications and driving sampling analog-to-digital converters (ADCs).  
8.2 Functional Block Diagram  
V+  
Reference  
Current  
VIN+  
VIN-  
VBIAS1  
Class AB  
Control  
Circuitry  
VO  
VBIAS2  
V-  
(Ground)  
8.3 Feature Description  
8.3.1 THD + Noise Performance  
The OPAx375 operational amplifier family has excellent distortion characteristics. OPA2375 and OPA4375 THD  
+ Noise is below 0.00015% (G = +1, VO = 1 VRMS, VCM = 1.8 V, VS = 5.5 V) throughout the audio frequency  
range, 20 Hz to 20 kHz, with a 10-kΩ load. The broadband noise of the 3.5 nV/Hz (OPA2375/4375) and 3.7  
nV/Hz (OPA375) is extremely low for a 10-MHz general purpose amplifier.  
8.3.2 Operating Voltage  
The OPAx375 operational amplifier family is fully specified and can operate from 1.7 V to 5.5 V (OPA2375/4375)  
and 2.25 V to 5.5 V (OPA375). In addition, many specifications apply from 40°C to 125°C. Power-supply pins  
must be bypassed with 0.1-µF ceramic capacitors.  
8.3.3 Rail-to-Rail Output  
Designed as low-power, low-voltage op amps, the OPAx375 devices deliver a robust output drive capability. A  
class AB output stage with common-source transistors achieves full rail-to-rail output swing capability. For  
resistive loads of 10 kΩ, the output swings to within few mV of either supply rail, regardless of the applied  
power-supply voltage. Different load conditions change the ability of the amplifier to swing close to the rails, see  
7-71.  
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8.3.4 EMI Rejection  
The TLV674x uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI from  
sources such as wireless communications and densely-populated boards with a mix of analog signal chain and  
digital components. EMI immunity can be improved with circuit design techniques; the OPAx375 benefits from  
these design improvements. Texas Instruments has developed the ability to accurately measure and quantify the  
immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz. 8-1  
shows the results of this testing on the TLV674x. 8-1 shows the EMIRR IN+ values for the TLV674x at  
particular frequencies commonly encountered in real-world applications. The EMI Rejection Ratio of Operational  
Amplifiers application report contains detailed information on the topic of EMIRR performance as it relates to op  
amps and is available for download from www.ti.com.  
120  
100  
80  
60  
40  
20  
0
10M  
100M  
Frequency (Hz)  
1G  
10G  
D039  
8-1. EMIRR Testing  
8-1. OPAx375 EMIRR IN+ for Frequencies of Interest  
FREQUENCY  
APPLICATION OR ALLOCATION  
EMIRR IN+  
Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)  
applications  
400 MHz  
59.5 dB  
Global system for mobile communications (GSM) applications, radio communication, navigation,  
GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications  
900 MHz  
1.8 GHz  
2.4 GHz  
3.6 GHz  
5 GHz  
68.9 dB  
77.8 dB  
78.0 dB  
88.8 dB  
87.6 dB  
GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)  
802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications, industrial, scientific and  
medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)  
Radiolocation, aero communication and navigation, satellite, mobile, S-band  
802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite  
operation, C-band (4 GHz to 8 GHz)  
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8.3.5 Electrical Overstress  
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress  
(EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the  
output pin. Each of these different pin functions have electrical stress limits determined by the voltage  
breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to  
the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them  
from accidental ESD events both before and during product assembly.  
Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is  
helpful. 8-2 shows an illustration of the ESD circuits contained in the OPAx375 (indicated by the dashed line  
area). The ESD protection circuitry involves several current-steering diodes connected from the input and output  
pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device or the  
power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain  
inactive during normal circuit operation.  
TVS  
RF  
+VS  
VDD  
OPAx990  
100 Ω  
100 Ω  
R1  
RS  
INœ  
œ
IN+  
+
Power-Supply  
ESD Cell  
RL  
ID  
+
VIN  
œ
VSS  
œVS  
TVS  
8-2. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application  
An ESD event is very short in duration and very high voltage (for example; 1 kV, 100 ns), whereas an EOS event  
is long in duration and lower voltage (for example; 50 V, 100 ms). The ESD diodes are designed for out-of-circuit  
ESD protection (that is, during assembly, test, and storage of the device before being soldered to the PCB).  
During an ESD event, the ESD signal is passed through the ESD steering diodes to an absorption circuit  
(labeled ESD power-supply circuit). The ESD absorption circuit clamps the supplies to a safe level.  
Although this behavior is necessary for out-of-circuit protection, excessive current and damage is caused if  
activated in-circuit. A transient voltage suppressor (TVS) can be used to prevent against damage caused by  
turning on the ESD absorption circuit during an in-circuit ESD event. Using the appropriate current limiting  
resistors and TVS diodes allows for the use of device ESD diodes to protect against EOS events.  
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The OPAx375 family incorporates internal electrostatic discharge (ESD) protection circuits on all pins, as shown  
above. These ESD protection diodes also provide in-circuit, input overdrive protection, as long as the current is  
limited to 10 mA as stated in 7.1. 8-3 shows how a series input resistor may be added to the driven input to  
limit the input current. The added resistor contributes thermal noise at the amplifier input and its value should be  
kept to a minimum in noise-sensitive applications.  
V+  
IOVERLOAD  
10-mA max  
VOUT  
Device  
VIN  
5 kW  
8-3. Input Current Protection  
8.3.6 Typical Specifications and Distributions  
Designers often have questions about a typical specification of an amplifier in order to design a more robust  
circuit. Due to natural variation in process technology and manufacturing procedures, every specification of an  
amplifier will exhibit some amount of deviation from the ideal value, like an amplifier's input offset voltage. These  
deviations often follow Gaussian ("bell curve"), or normal, distributions and circuit designers can leverage this  
information to guardband their system, even when there is not a minimum or maximum specification in 7.6.  
0.00312% 0.13185%  
0.13185% 0.00312%  
0.00002%  
0.00002%  
2.145% 13.59% 34.13% 34.13% 13.59% 2.145%  
1
1 1 1 1 1 1 1 1  
1
1
1
-61 -51 -41 -31 -21 -1  
+1 +21 +31 +41 +51 +61  
8-4. Ideal Gaussian Distribution  
8-4 shows an example distribution, where µ, or mu, is the mean of the distribution, and where σ, or sigma, is  
the standard deviation of a system. For a specification that exhibits this kind of distribution, approximately two-  
thirds (68.26%) of all units can be expected to have a value within one standard deviation, or one sigma, of the  
mean (from µσto µ+σ).  
Depending on the specification, values listed in the typical column of 7.6 are represented in different ways. As  
a general rule of thumb, if a specification naturally has a nonzero mean (for example, like gain bandwidth), then  
the typical value is equal to the mean (µ). However, if a specification naturally has a mean near zero (like input  
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offset voltage), then the typical value is equal to the mean plus one standard deviation (µ + σ) in order to most  
accurately represent the typical value.  
You can use this chart to calculate approximate probability of a specification in a unit; for example, for OPA2375,  
the typical input voltage offset is 150 µV, so 68.2% of all OPA2375 devices are expected to have an offset from  
150 µV to 150 µV.  
Specifications with a value in the minimum or maximum column are assured by TI, and units outside these limits  
will be removed from production material. For example, the OPA2375 device has a maximum offset voltage of  
0.5 mV at 25°C, and even though this corresponds to 5 σ (1 in 1.7 million units), which is extremely unlikely,  
TI assures that any unit with a larger offset than 0.5 mV will be removed from production material.  
For specifications with no value in the minimum or maximum column, consider selecting a sigma value of  
sufficient guardband for your application, and design worst-case conditions using this value. For example, the 6-  
σ value corresponds to about 1 in 500 million units, which is an extremely unlikely chance, and could be an  
option as a wide guardband to design a system around. In this case, the OPA2375 does not have a maximum or  
minimum for offset voltage drift, but based on 7-40 and the typical value of 0.16 µV/°C in 7.6, it can be  
calculated that the 6-σ value for offset voltage drift is about 0.96 µV/°C. When designing for worst-case system  
conditions, this value can be used to estimate the worst possible offset across temperature without having an  
actual minimum or maximum value.  
However, process variation and adjustments over time can shift typical means and standard deviations, and  
unless there is a value in the minimum or maximum specification column, TI cannot assure the performance of a  
device. This information should be used only to estimate the performance of a device.  
8.3.7 Shutdown Function  
The OPAx375S devices feature SHDN pins that disable the op amp, placing it into a low-power standby mode. In  
this mode, the op amp typically consumes less than 1 µA. The SHDN pins are active-low, meaning that  
shutdown mode is enabled when the input to the SHDN pin is a valid logic low.  
The SHDN pins are referenced to the negative supply voltage of the op amp. The threshold of the shutdown  
feature lies around 800 mV (typical) above the negative rail. Hysteresis has been included in the switching  
threshold to ensure smooth switching characteristics. To ensure optimal shutdown behavior, the SHDN pins  
should be driven with valid logic signals. A valid logic low is defined as a voltage between Vand V+ 0.2 V. A  
valid logic high is defined as a voltage between V+ 1.2 V and V+. The shutdown pin must either be connected  
to a valid high or a low voltage or driven, and not left as an open circuit. There is no internal pull-up to enable the  
amplifier.  
The SHDN pins are high-impedance CMOS inputs. Dual op amp versions are independently controlled, and  
quad op amp versions are controlled in pairs with logic inputs. For battery-operated applications, this feature  
may be used to greatly reduce the average current and extend battery life. The enable time is 15 µs for full  
shutdown of all channels; disable time is 3 µs. When disabled, the output assumes a high-impedance state. This  
architecture allows the OPAx375S to be operated as a gated amplifier (or to have the device output multiplexed  
onto a common analog output bus). Shutdown time (tOFF) depends on loading conditions and increases as load  
resistance increases. To ensure shutdown (disable) within a specific shutdown time, the specified 10-kΩ load to  
midsupply (VS / 2) is required. If using the OPAx375S without a load, the resulting turnoff time is significantly  
increased.  
8.3.8 Packages With an Exposed Thermal Pad  
The OPAx375 family is available in packages such as the WSON-8 (DSG) which feature an exposed thermal  
pad. Inside the package, the die is attached to this thermal pad using an electrically conductive compound. For  
this reason, when using a package with an exposed thermal pad, the thermal pad must either be connected to  
Vor left floating. Attaching the thermal pad to a potential other than Vis not allowed, and performance of  
the device is not assured when doing so.  
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8.3.9 Common Mode Voltage Range  
The input common-mode voltage range of the OPAx375 family extends to the negative rail and within 2 V of the  
top rail for normal operation. However, this device can also operate with full rail-to-rail input 100 mV beyond the  
top rail, but with reduced performance within 2 V of the top rail. The typical performance in this range is  
summarized in for the OPA375. You can see the typical input offset voltage of the OPA2375/4375 in the 7-43  
graph.  
8-2. OPA375 Typical Performance (VS = 5 V, VCM > VS 1.2 V)  
PARAMETER  
MIN  
TYP  
MAX  
UNIT  
mV  
Offset voltage  
Slew rate  
3
1.5  
15  
V/µS  
Input voltage noise density at f = 1 kHz  
nV/Hz  
8.4 Device Functional Modes  
The OPAx375 family has a single functional mode. The OPA2375 and OPA4375 are powered on as long as the  
power-supply voltage is between 1.7 V (±0.85 V) and 5.5 V (±2.75 V). The OPA375 is powered on as long as the  
power-supply voltage is between 2.25 V (±1.125 V) and 5.5 V (±2.75 V).  
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9 Application and Implementation  
Note  
Information in the following applications sections is not part of the TI component specification, and TI  
does not warrant its accuracy or completeness. TIs customers are responsible for determining  
suitability of components for their purposes. Customers should validate and test their design  
implementation to confirm system functionality.  
9.1 Application Information  
The OPAx375 family features 10-MHz bandwidth and 4.75-V/µs slew rate with 890 µA (OPA375), 990 µA  
(OPA2375/4375) of supply current per channel, providing good AC performance at low-power consumption. DC  
applications are well served with a low input noise voltage of 3.5 nV/Hz (OPA2375/4375), 3.7 nV/Hz  
(OPA375) at 10 kHz, low input bias current, and a typical input offset voltage of 0.15 mV.  
9.2 Single-Supply Electret Microphone Preamplifier With Speech Filter  
Electret microphones are commonly used in portable electronics because of the small size, low cost, and  
relatively good signal-to-noise ratio (SNR). The small package size, low operating voltage and AC performance  
of the OPA375 make the device a viable option for preamplifier circuits for electret microphones. The circuit  
shown in 9-1 is a single-supply preamplifier circuit for electret microphones.  
3 V  
3 V  
R1  
200 k  
R1  
2.2 kꢀ  
3 V  
Electret  
Microphone  
+
OPA375  
VOUT  
CG 68 nF  
R2  
200 kꢀ  
RF 165 kꢀ  
CF 3.3 nF  
RG  
3.4 kꢀ  
CG 68 nF  
Copyright © 2017, Texas Instruments Incorporated  
9-1. Microphone Preamplifier  
9.2.1 Design Requirements  
The design requirements are as follows:  
Supply voltage: 3 V  
Input voltage: 7.93 mVRMS (0.63 Pa with a 38-dB SPL microphone)  
Output: 1 VRMS  
Bandwidth: 300 Hz to 3 kHz  
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9.2.2 Detailed Design Procedure  
The transfer function defining the relationship between VOUT and the AC input signal is shown in 方程1.  
÷
R
F
V
= V  
ì 1+  
OUT  
IN _ AC  
R
«
G
(1)  
The required gain can be calculated based on the expected input signal level and desired output level as shown  
in 方程2.  
VOUT  
1VRMS  
V
V
GOPA  
=
=
=126  
VIN _ AC 7.93mVRMS  
(2)  
Select a standard 10-kΩfeedback resistor and calculate RG from 方程3.  
RF  
10kW  
V
126 -1  
V
RG =  
=
= 80W ç 78.7W (closest standard value)  
GOPA -1  
(3)  
To minimize the attenuation in the desired passband from 300 Hz to 3 kHz, set the upper (fH) and lower (fL) cutoff  
frequencies outside of the desired bandwidth as:  
fL = 200 Hz  
(4)  
and  
fH = 5 kHz  
(5)  
Select CG to set the fL cutoff frequency using 方程6.  
1
1
CG =  
=
= 10.11mF ç10mF  
2ìp ì RG ì fL 2ìp ì 78.7Wì 200Hz  
(6)  
(7)  
Select CF to set the fH cutoff frequency using 方程7.  
1
1
CF =  
=
= 3.18nF ç 3.3nF (Standard Value)  
2ì  
p
ì RF ì fH 2ì  
p
ì10kWì5kHz  
The input signal cutoff frequency must be set low enough such that low-frequency sound waves still pass  
through. Therefore select CIN to achieve a 30-Hz cutoff frequency (fIN) using 方程8.  
1
1
CIN =  
=
= 53nF ç 68nF (Standard Value)  
2ì  
p
ì(R || R2 )ì fIN 2ì  
p
ì100k30Hz  
1
(8)  
The measured transfer function for the microphone preamplifier circuit is shown in 9-2 and the measured THD  
+ N performance of the microphone preamplifier circuit is shown in 9-3.  
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9.2.3 Application Curves  
50  
40  
30  
20  
10  
0
0
œ20  
œ40  
œ60  
œ80  
œ10  
20  
200  
2000  
Frequency (Hz)  
20000  
0.005  
0.05  
0.5  
5
RMS Output Voltage (V)  
C039  
C040  
9-2. Gain vs Frequency  
9-3. THD + N vs RMS Output Voltage  
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10 Power Supply Recommendations  
The OPA2375 and OPA4375 devices are specified for operation from 1.7 V to 5.5 V (±0.85 V to ±2.75 V). The  
OPA375 device is specified for operation from 2.25 V to 5.5 V (±1.125 V to ±2.75 V). Many specifications of the  
OPAx375 family apply from 40°C to 125°C.  
CAUTION  
Supply voltages larger than 7 V can permanently damage the device (see 7.1).  
Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-  
impedance power supplies. For more detailed information on bypass capacitor placement, see 11.1.  
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11 Layout  
11.1 Layout Guidelines  
For best operational performance of the device, use good printed-circuit board (PCB) layout practices, including:  
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the operational  
amplifier. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power  
sources local to the analog circuitry.  
Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as  
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-  
supply applications.  
Separate grounding for analog and digital portions of the circuitry is one of the simplest and most effective  
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.  
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital  
and analog grounds, paying attention to the flow of the ground current.  
To reduce parasitic coupling, run the input traces as far away from the supply or output traces as possible. If  
these traces cannot be kept separate, crossing the sensitive trace perpendicularly is much better than  
crossing in parallel with the noisy trace.  
Place the external components as close to the device as possible. Keeping RF and RG close to the inverting  
input minimizes parasitic capacitance, as shown in 11-1.  
Keep the length of input traces as short as possible. Always remember that the input traces are the most  
sensitive part of the circuit.  
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce  
leakage currents from nearby traces that are at different potentials.  
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11.2 Layout Example  
GND  
GND  
OUTPUT  
V-  
GND  
11-1. Operational Amplifier Board Layout for Noninverting Configuration  
V-  
C3  
INPUT  
OUTPUT  
U1  
OPA375  
2
1
3
R3  
+
4
œ
C4  
C2  
V+  
R1  
C1  
R2  
Copyright © 2017, Texas Instruments Incorporated  
11-2. Layout Example Schematic  
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GND  
GND  
GND  
V+  
INPUT A  
OUTPUT B  
V-  
GND  
GND  
GND  
11-3. Example Layout for VSSOP-8 (DGK) Package  
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12 Device and Documentation Support  
12.1 Documentation Support  
12.1.1 Related Documentation  
For related documentation see the following:  
Texas Instruments, QFN/SON PCB Attachment  
Texas Instruments, Quad Flatpack No-Lead Logic Packages  
Texas Instruments, EMI Rejection Ratio of Operational Amplifiers  
12.2 接收文档更新通知  
要接收文档更新通知请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册即可每周接收产品信息更  
改摘要。有关更改的详细信息请查看任何已修订文档中包含的修订历史记录。  
12.3 支持资源  
TI E2E支持论坛是工程师的重要参考资料可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解  
答或提出自己的问题可获得所需的快速设计帮助。  
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范并且不一定反映 TI 的观点请参阅  
TI 《使用条款》。  
12.4 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
Bluetooth® is a registered trademark of Bluetooth SIG, Inc.  
所有商标均为其各自所有者的财产。  
12.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
12.6 术语表  
TI 术语表  
本术语表列出并解释了术语、首字母缩略词和定义。  
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13 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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重要声明和免责声明  
TI 提供技术和可靠性数据包括数据表、设计资源包括参考设计、应用或其他设计建议、网络工具、安全信息和其他资源不保证没  
有瑕疵且不做出任何明示或暗示的担保包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担保。  
这些资源可供使TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任(1) 针对您的应用选择合适TI 产品(2) 设计、验  
证并测试您的应用(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。这些资源如有变更恕不另行通知。TI 授权您仅可  
将这些资源用于研发本资源所述TI 产品的应用。严禁对这些资源进行其他复制或展示。您无权使用任何其TI 知识产权或任何第三方知  
识产权。您应全额赔偿因在这些资源的使用中TI 及其代表造成的任何索赔、损害、成本、损失和债务TI 对此概不负责。  
TI 提供的产品TI 的销售条(https:www.ti.com/legal/termsofsale.html) ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI  
提供这些资源并不会扩展或以其他方式更TI TI 产品发布的适用的担保或担保免责声明。重要声明  
邮寄地址Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2021德州仪(TI) 公司  
PACKAGE OPTION ADDENDUM  
www.ti.com  
9-Sep-2021  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
OPA2375IDDFR  
OPA2375IDGKR  
OPA2375IDR  
ACTIVE SOT-23-THIN  
DDF  
DGK  
D
8
8
3000 RoHS & Green  
2500 RoHS & Green  
2500 RoHS & Green  
3000 RoHS & Green  
2000 RoHS & Green  
3000 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
O75D  
2J8T  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
VSSOP  
SOIC  
SN  
8
NIPDAU  
NIPDAU  
NIPDAU  
NIPDAUAG  
NIPDAU  
NIPDAU  
O2375D  
O75D  
O2375P  
HIF  
OPA2375IDSGR  
OPA2375IPWR  
OPA2375SIRUGR  
OPA375IDCKR  
OPA375IDCKT  
WSON  
TSSOP  
X2QFN  
SC70  
DSG  
PW  
8
8
RUG  
DCK  
DCK  
10  
5
19W  
SC70  
5
250  
RoHS & Green  
19W  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
9-Sep-2021  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
17-Apr-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
OPA2375IDDFR  
SOT-23-  
THIN  
DDF  
8
3000  
180.0  
8.4  
3.2  
3.2  
1.4  
4.0  
8.0  
Q3  
OPA2375IDGKR  
OPA2375IDR  
VSSOP  
SOIC  
DGK  
D
8
8
2500  
2500  
3000  
2000  
3000  
3000  
250  
330.0  
330.0  
180.0  
330.0  
178.0  
178.0  
178.0  
12.4  
12.4  
8.4  
5.3  
6.4  
2.3  
7.0  
1.75  
2.4  
2.4  
3.4  
5.2  
2.3  
3.6  
2.25  
2.5  
2.5  
1.4  
2.1  
8.0  
8.0  
4.0  
8.0  
4.0  
4.0  
4.0  
12.0  
12.0  
8.0  
Q1  
Q1  
Q2  
Q1  
Q1  
Q3  
Q3  
OPA2375IDSGR  
OPA2375IPWR  
OPA2375SIRUGR  
OPA375IDCKR  
OPA375IDCKT  
WSON  
TSSOP  
X2QFN  
SC70  
DSG  
PW  
8
1.15  
1.6  
8
12.4  
8.4  
12.0  
8.0  
RUG  
DCK  
DCK  
10  
5
0.56  
1.2  
9.0  
8.0  
SC70  
5
9.0  
1.2  
8.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
17-Apr-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
OPA2375IDDFR  
OPA2375IDGKR  
OPA2375IDR  
SOT-23-THIN  
VSSOP  
SOIC  
DDF  
DGK  
D
8
8
3000  
2500  
2500  
3000  
2000  
3000  
3000  
250  
210.0  
366.0  
356.0  
210.0  
356.0  
205.0  
190.0  
190.0  
185.0  
364.0  
356.0  
185.0  
356.0  
200.0  
190.0  
190.0  
35.0  
50.0  
35.0  
35.0  
35.0  
33.0  
30.0  
30.0  
8
OPA2375IDSGR  
OPA2375IPWR  
OPA2375SIRUGR  
OPA375IDCKR  
OPA375IDCKT  
WSON  
TSSOP  
X2QFN  
SC70  
DSG  
PW  
8
8
RUG  
DCK  
DCK  
10  
5
SC70  
5
Pack Materials-Page 2  
GENERIC PACKAGE VIEW  
DSG 8  
2 x 2, 0.5 mm pitch  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
This image is a representation of the package family, actual package may vary.  
Refer to the product data sheet for package details.  
4224783/A  
www.ti.com  
PACKAGE OUTLINE  
DSG0008A  
WSON - 0.8 mm max height  
SCALE 5.500  
PLASTIC SMALL OUTLINE - NO LEAD  
2.1  
1.9  
B
A
0.32  
0.18  
PIN 1 INDEX AREA  
2.1  
1.9  
0.4  
0.2  
ALTERNATIVE TERMINAL SHAPE  
TYPICAL  
0.8  
0.7  
C
SEATING PLANE  
0.05  
0.00  
SIDE WALL  
0.08 C  
METAL THICKNESS  
DIM A  
OPTION 1  
0.1  
OPTION 2  
0.2  
EXPOSED  
THERMAL PAD  
(DIM A) TYP  
0.9 0.1  
5
4
6X 0.5  
2X  
1.5  
9
1.6 0.1  
8
1
0.32  
0.18  
PIN 1 ID  
(45 X 0.25)  
8X  
0.4  
0.2  
8X  
0.1  
C A B  
C
0.05  
4218900/E 08/2022  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DSG0008A  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
(0.9)  
(
0.2) VIA  
8X (0.5)  
TYP  
1
8
8X (0.25)  
(0.55)  
SYMM  
9
(1.6)  
6X (0.5)  
5
4
SYMM  
(1.9)  
(R0.05) TYP  
LAND PATTERN EXAMPLE  
SCALE:20X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
SOLDER MASK  
OPENING  
METAL  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4218900/E 08/2022  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown  
on this view. It is recommended that vias under paste be filled, plugged or tented.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DSG0008A  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
8X (0.5)  
METAL  
8
SYMM  
1
8X (0.25)  
(0.45)  
SYMM  
9
(0.7)  
6X (0.5)  
5
4
(R0.05) TYP  
(0.9)  
(1.9)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD 9:  
87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE  
SCALE:25X  
4218900/E 08/2022  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
PACKAGE OUTLINE  
PW0008A  
TSSOP - 1.2 mm max height  
S
C
A
L
E
2
.
8
0
0
SMALL OUTLINE PACKAGE  
C
6.6  
6.2  
SEATING PLANE  
TYP  
PIN 1 ID  
AREA  
A
0.1 C  
6X 0.65  
8
5
1
3.1  
2.9  
NOTE 3  
2X  
1.95  
4
0.30  
0.19  
8X  
4.5  
4.3  
1.2 MAX  
B
0.1  
C A  
B
NOTE 4  
(0.15) TYP  
SEE DETAIL A  
0.25  
GAGE PLANE  
0.15  
0.05  
0.75  
0.50  
0 - 8  
DETAIL A  
TYPICAL  
4221848/A 02/2015  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.  
5. Reference JEDEC registration MO-153, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
PW0008A  
TSSOP - 1.2 mm max height  
SMALL OUTLINE PACKAGE  
8X (1.5)  
SYMM  
8X (0.45)  
(R0.05)  
1
4
TYP  
8
SYMM  
6X (0.65)  
5
(5.8)  
LAND PATTERN EXAMPLE  
SCALE:10X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
0.05 MAX  
ALL AROUND  
0.05 MIN  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
NOT TO SCALE  
4221848/A 02/2015  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
PW0008A  
TSSOP - 1.2 mm max height  
SMALL OUTLINE PACKAGE  
8X (1.5)  
SYMM  
(R0.05) TYP  
8X (0.45)  
1
4
8
SYMM  
6X (0.65)  
5
(5.8)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:10X  
4221848/A 02/2015  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
D0008A  
SOIC - 1.75 mm max height  
SCALE 2.800  
SMALL OUTLINE INTEGRATED CIRCUIT  
C
SEATING PLANE  
.228-.244 TYP  
[5.80-6.19]  
.004 [0.1] C  
A
PIN 1 ID AREA  
6X .050  
[1.27]  
8
1
2X  
.189-.197  
[4.81-5.00]  
NOTE 3  
.150  
[3.81]  
4X (0 -15 )  
4
5
8X .012-.020  
[0.31-0.51]  
B
.150-.157  
[3.81-3.98]  
NOTE 4  
.069 MAX  
[1.75]  
.010 [0.25]  
C A B  
.005-.010 TYP  
[0.13-0.25]  
4X (0 -15 )  
SEE DETAIL A  
.010  
[0.25]  
.004-.010  
[0.11-0.25]  
0 - 8  
.016-.050  
[0.41-1.27]  
DETAIL A  
TYPICAL  
(.041)  
[1.04]  
4214825/C 02/2019  
NOTES:  
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.  
Dimensioning and tolerancing per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed .006 [0.15] per side.  
4. This dimension does not include interlead flash.  
5. Reference JEDEC registration MS-012, variation AA.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
SEE  
DETAILS  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED  
METAL  
EXPOSED  
METAL  
.0028 MAX  
[0.07]  
.0028 MIN  
[0.07]  
ALL AROUND  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4214825/C 02/2019  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
D0008A  
SOIC - 1.75 mm max height  
SMALL OUTLINE INTEGRATED CIRCUIT  
8X (.061 )  
[1.55]  
SYMM  
1
8
8X (.024)  
[0.6]  
SYMM  
(R.002 ) TYP  
[0.05]  
5
4
6X (.050 )  
[1.27]  
(.213)  
[5.4]  
SOLDER PASTE EXAMPLE  
BASED ON .005 INCH [0.125 MM] THICK STENCIL  
SCALE:8X  
4214825/C 02/2019  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
DCK0005A  
SOT - 1.1 max height  
S
C
A
L
E
5
.
6
0
0
SMALL OUTLINE TRANSISTOR  
C
2.4  
1.8  
0.1 C  
1.4  
1.1  
B
1.1 MAX  
A
PIN 1  
INDEX AREA  
1
2
5
NOTE 4  
(0.15)  
(0.1)  
2X 0.65  
1.3  
2.15  
1.85  
1.3  
4
3
0.33  
5X  
0.23  
0.1  
0.0  
(0.9)  
TYP  
0.1  
C A B  
0.15  
0.22  
0.08  
GAGE PLANE  
TYP  
0.46  
0.26  
8
0
TYP  
TYP  
SEATING PLANE  
4214834/C 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Refernce JEDEC MO-203.  
4. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DCK0005A  
SOT - 1.1 max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (0.95)  
1
5
5X (0.4)  
SYMM  
(1.3)  
2
3
2X (0.65)  
4
(R0.05) TYP  
(2.2)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:18X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
EXPOSED METAL  
EXPOSED METAL  
0.07 MIN  
ARROUND  
0.07 MAX  
ARROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214834/C 03/2023  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DCK0005A  
SOT - 1.1 max height  
SMALL OUTLINE TRANSISTOR  
PKG  
5X (0.95)  
1
5
5X (0.4)  
SYMM  
(1.3)  
2
3
2X(0.65)  
4
(R0.05) TYP  
(2.2)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 THICK STENCIL  
SCALE:18X  
4214834/C 03/2023  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
PACKAGE OUTLINE  
DDF0008A  
SOT-23 - 1.1 mm max height  
S
C
A
L
E
4
.
0
0
0
PLASTIC SMALL OUTLINE  
C
2.95  
2.65  
SEATING PLANE  
TYP  
PIN 1 ID  
AREA  
0.1 C  
A
6X 0.65  
8
1
2.95  
2.85  
NOTE 3  
2X  
1.95  
4
5
0.38  
0.22  
8X  
0.1  
C A B  
1.65  
1.55  
B
1.1 MAX  
0.20  
0.08  
TYP  
SEE DETAIL A  
0.25  
GAGE PLANE  
0.1  
0.0  
0 - 8  
0.6  
0.3  
DETAIL A  
TYPICAL  
4222047/C 10/2022  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DDF0008A  
SOT-23 - 1.1 mm max height  
PLASTIC SMALL OUTLINE  
8X (1.05)  
SYMM  
1
8
8X (0.45)  
SYMM  
6X (0.65)  
5
4
(R0.05)  
TYP  
(2.6)  
LAND PATTERN EXAMPLE  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4222047/C 10/2022  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DDF0008A  
SOT-23 - 1.1 mm max height  
PLASTIC SMALL OUTLINE  
8X (1.05)  
SYMM  
(R0.05) TYP  
8
1
8X (0.45)  
SYMM  
6X (0.65)  
5
4
(2.6)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:15X  
4222047/C 10/2022  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
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