OPA4991-Q1_技术文档

OPA991-Q1, OPA2991-Q1, OPA4991-Q1

SBOSA12D – MARCH 2020 – REVISED SEPTEMBER 2021

OPAx991-Q1 Automotive, 40-V Rail-to-Rail Input/Output, Low Offset Voltage,

Low Noise Op Amp

1 Features

3 Description

•

AEC-Q100 qualified for automotive applications

– Temperature grade 1: –40°C to +125°C, T_A

– Device HBM ESD classification level 2A

– Device CDM ESD classification level C6

Low offset voltage: ±125 µV

Low offset voltage drift: ±0.3 µV/°C

Low noise: 10.8 nV/√Hz at 1 kHz

High common-mode rejection: 130 dB

Low bias current: ±10 pA

Rail-to-rail input and output

Wide bandwidth: 4.5 MHz GBW

High slew rate: 21 V/µs

High capacitive load drive: 1 nF

MUX-friendly/comparator inputs

– Amplifier operates with differential inputs up to

supply rail

– Amplifier can be used in open-loop or as

comparator

The OPAx991-Q1 family (OPA991-Q1, OPA2991-Q1,

and OPA4991-Q1) is a family of high voltage (40 V)

general purpose operational amplifiers for automotive

application. These devices offer exceptional DC

precision and AC performance, including rail-to-rail

input/output, low offset (±125 µV, typ), low offset drift

(±0.3 µV/°C, typ), low noise (10.8 nV/√Hz and 1.8

µV_PP), and 4.5-MHz bandwidth.

•

Unique features such as differential and common-

mode input-voltage range to the supply rail, high

output current (±75 mA), high slew rate (21 V/µs), and

high capacitive load drive (1 nF) make the OPAx991-

Q1 a robust, high-performance operational amplifier

for high-voltage automotive applications.

The OPAx991-Q1 family of op amps is available in

standard packages (such as SOT-23, SOIC, VSSOP,

and TSSOP) and is specified from –40°C to 125°C.

•

Low quiescent current: 560 µA per amplifier

Wide supply: ±1.35 V to ±20 V, 2.7 V to 40 V

Robust EMIRR performance: EMI/RFI filters on

input and supply pins

Device Information

PART NUMBER⁽¹⁾

PACKAGE

BODY SIZE (NOM)

2.90 mm × 1.60 mm

4.90 mm × 3.90 mm

3.00 mm × 3.00 mm

8.65 mm × 3.90 mm

4.20 mm × 1.90 mm

5.00 mm × 4.40 mm

OPA991-Q1

SOT-23 (5)

SOIC (8)

OPA2991-Q1

OPA4991-Q1

2 Applications

VSSOP (8)

SOIC (14)

SOT-23 (14)

TSSOP (14)

•

Optimized for AEC-Q100 grade 1 applications

Infotainment and cluster

Passive safety

Body electronics and lighting

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

HEV/EV inverter and motor control

On-board (OBC) and wireless charger

Powertrain current sensor

Advanced driver assistance systems (ADAS)

High-side current sensing

Analog Inputs

REF3140

RC Filter

OPA375

RC Filter

Bridge Sensor

Reference Driver

Gain Network

OPA991

+

MUX509

Thermocouple

REF

+

V_INP

OPA991

Gain Network

Antialiasing

Filter

OPA991

+

ADS8860

Current Sensing

Photo

V_INM

Detector

LED

High-Voltage Multiplexed Input

High-Voltage Level Translation

VCM

Optical Sensor

OPAx991-Q1 in a High-Voltage Signal Chain

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

OPA991-Q1, OPA2991-Q1, OPA4991-Q1

SBOSA12D – MARCH 2020 – REVISED SEPTEMBER 2021

www.ti.com

Table of Contents

1 Features............................................................................1

2 Applications.....................................................................1

3 Description.......................................................................1

4 Revision History.............................................................. 2

5 Pin Configuration and Functions...................................3

6 Specifications.................................................................. 6

6.1 Absolute Maximum Ratings ....................................... 6

6.2 ESD Ratings............................................................... 6

6.3 Recommended Operating Conditions ........................6

6.4 Thermal Information for Single Channel .................... 6

6.5 Thermal Information for Dual Channel .......................7

6.6 Thermal Information for Quad Channel ..................... 7

6.7 Electrical Characteristics ............................................8

6.8 Typical Characteristics..............................................10

7 Detailed Description......................................................17

7.1 Overview...................................................................17

7.2 Functional Block Diagram.........................................17

7.3 Feature Description...................................................18

7.4 Device Functional Modes..........................................26

8 Application and Implementation..................................27

8.1 Application Information............................................. 27

8.2 Typical Applications.................................................. 27

9 Power Supply Recommendations................................29

10 Layout...........................................................................30

10.1 Layout Guidelines................................................... 30

10.2 Layout Example...................................................... 31

11 Device and Documentation Support..........................32

11.1 Device Support........................................................32

11.2 Documentation Support.......................................... 32

11.3 Receiving Notification of Documentation Updates..32

11.4 Support Resources................................................. 32

11.5 Trademarks............................................................. 32

11.6 Electrostatic Discharge Caution..............................33

11.7 Glossary..................................................................33

12 Mechanical, Packaging, and Orderable

Information.................................................................... 34

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision C (May 2021) to Revision D (September 2021)

Page

•

Deleted preview note from SOIC (14) package in Device Information table...................................................... 1

Deleted preview note from SOT-23 (14) package in Device Information table...................................................1

Deleted preview note from SOIC (8) package in Device Information table........................................................ 1

Deleted preview note from SOT-23 (5) package in Device Information table.....................................................1

Changes from Revision B (March 2021) to Revision C (May 2021)

Page

•

Deleted preview note from TSSOP (14) package in Device Information table...................................................1

Changes from Revision A (December 2020) to Revision B (March 2021)

Page

•

Changed data sheet status from "Advance Information" to "Production Data"...................................................1

Deleted preview note from VSSOP (8) package in Device Information table.....................................................1

Changes from Revision * (March 2020) to Revision A (December 2020)

Page

•

Updated the numbering format for tables, figures, and cross-references throughout the document..................1

Added link to all applications in Applications section..........................................................................................1

Deleted SOT-23 (8) package from Device Information in the Description section..............................................1

Added SOT-23 (14) package to Device Information in the Description section..................................................1

Deleted Table of Graphs from the Specifications section................................................................................. 10

2

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5 Pin Configuration and Functions

OUT

Vœ

1

2

3

5

V+

IN+

4

INœ

Not to scale

Figure 5-1. OPA991-Q1 DBV Package

5-Pin SOT-23

Top View

Table 5-1. Pin Functions: OPA991-Q1

I/O

DESCRIPTION

NAME

NO.

3

IN+

IN-

I

Noninverting input

4

I

Inverting input

OUT

V+

1

O

—

Output

5

Positive (highest) power supply

Negative (lowest) power supply

V–

2

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OUT1

IN1œ

IN1+

Vœ

1

2

3

4

8

7

6

5

V+

OUT2

IN2œ

IN2+

Not to scale

Figure 5-2. OPA2991-Q1 D and DGK Package

8-Pin SOIC and VSSOP

Top View

Table 5-2. Pin Functions: OPA2991-Q1

I/O

DESCRIPTION

NAME

NO.

3

IN1+

IN2+

IN1–

IN2–

OUT1

OUT2

V+

I

Noninverting input, channel 1

Noninverting input, channel 2

Inverting input, channel 1

Inverting input, channel 2

Output, channel 1

5

2

I

6

I

1

O

—

7

Output, channel 2

8

Positive (highest) power supply

Negative (lowest) power supply

V–

4

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OUT1

IN1œ

IN1+

V+

1

2

3

4

5

6

7

14

13

12

11

10

9

OUT4

IN4œ

IN4+

Vœ

IN2+

IN2œ

OUT2

IN3+

IN3œ

OUT3

8

Not to scale

Figure 5-3. OPA4991-Q1 D, DYY, and PW Package

14-Pin SOIC, SOT-23 (14), and TSSOP

Top View

Table 5-3. Pin Functions: OPA4991-Q1

I/O

DESCRIPTION

NAME

NO.

3

IN1+

IN1–

IN2+

IN2–

IN3+

IN3–

IN4+

IN4–

OUT1

OUT2

OUT3

OUT4

V+

I

Noninverting input, channel 1

Inverting input, channel 1

Noninverting input, channel 2

Inverting input, channel 2

Noninverting input, channel 3

Inverting input, channel 3

Noninverting input, channel 4

Inverting input, channel 4

Output, channel 1

2

5

I

6

I

10

9

I

12

13

1

I

O

—

7

Output, channel 2

8

Output, channel 3

14

4

Output, channel 4

Positive (highest) power supply

Negative (lowest) power supply

V–

11

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6 Specifications

6.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted) ⁽¹⁾

MIN

0

MAX

42

UNIT

V

Supply voltage, V_S= (V+) – (V–)

Common-mode voltage ⁽³⁾

(V–) – 0.5

(V+) + 0.5

V_S+ 0.2

10

V

Signal input pins

Differential voltage ⁽³⁾

Current ⁽³⁾

V

–10

–55

–65

mA

Output short-circuit ⁽²⁾

Continuous

Operating ambient temperature, T_A

Junction temperature, T_J

Storage temperature, T_stg

150

°C

(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2) Short-circuit to ground, one amplifier per package. This device has been designed to limit electrical damage due to excessive output

current, but extended short-circuit current, especially with higher supply voltage, can cause excessive heating and eventual thermal

destruction. See the Thermal Protection section for more information.

(3) Input pins are diode-clamped to the power-supply rails. Input signals that may swing more than 0.5 V beyond the supply rails must be

current limited to 10 mA or less.

6.2 ESD Ratings

VALUE

±2000

±1000

UNIT

Human-body model (HBM), per AEC Q100-002⁽¹⁾

Charged-device model (CDM), per AEC Q100-011

V_(ESD)

Electrostatic discharge

V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

2.7

MAX

40

UNIT

V

V_S

V_I

Supply voltage, (V+) – (V–)

Input voltage range

(V–) – 0.1

–40

(V+) + 0.1

125

V

T_A

Specified ambient temperature

°C

6.4 Thermal Information for Single Channel

OPA991-Q1

DBV

(SOT-23)

THERMAL METRIC ⁽¹⁾

UNIT

5 PINS

187.4

86.2

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

54.6

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

27.8

ψ_JB

54.3

R_θJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6

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6.5 Thermal Information for Dual Channel

OPA2991-Q1

D

DGK

UNIT

THERMAL METRIC ⁽¹⁾

(SOIC)

8 PINS

132.6

73.4

(VSSOP)

8 PINS

176.5

68.1

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

76.1

98.2

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

24.0

12.0

ψ_JB

75.4

96.7

R_θJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.6 Thermal Information for Quad Channel

OPA4991-Q1

D

PW

(TSSOP)

DYY

(SOT-23)

THERMAL METRIC ⁽¹⁾

UNIT

(SOIC)

14 PINS

101.4

57.6

14 PINS

118.0

47.6

14 PINS

110.7

55.9

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

R_θJC(top)

R_θJB

°C/W

57.3

60.9

35.3

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

18.5

6.0

2.3

ψ_JB

56.9

60.4

35.1

R_θJC(bot)

N/A

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

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6.7 Electrical Characteristics

For V_S= (V+) – (V–) = 2.7 V to 40 V (±1.35 V to ±20 V) at T_A= 25°C, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and

V_{O UT}= V_S/ 2, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFFSET VOLTAGE

±125

±895

±925

V_OS

Input offset voltage

V_CM= V–

µV

T_A= –40°C to 125°C

dV_OS/dT

PSRR

Input offset voltage drift

T_A= –40°C to 125°C

±0.3

±1

µV/℃

µV/V

V_CM= V–, V_S= 4 V to 40 V

V_CM= V–, V_S= 2.7 V to 40 V⁽²⁾

f = 0 Hz

±1

±5

Input offset voltage

versus power supply

T_A= –40°C to 125°C

Channel separation

5

INPUT BIAS CURRENT

I_B

Input bias current

±10

pA

I_OS

Input offset current

NOISE

1.8

0.3

µV_PP

E_N

Input voltage noise

f = 0.1 Hz to 10 Hz

µV_RMS

f = 1 kHz

f = 10 kHz

f = 1 kHz

10.8

9.4

Input voltage noise

density

e_N

i_N

nV/√Hz

fA/√Hz

Input current noise

82

INPUT VOLTAGE RANGE

Common-mode voltage

range

V_CM

(V–) – 0.1

(V+) + 0.1

V

V_S= 40 V, (V–) – 0.1 V < V_CM< (V+)

– 2 V (Main input pair)

107

82

130

100

95

V_S= 4 V, (V–) – 0.1 V < V_CM< (V+) –

2 V (Main input pair)

Common-mode rejection

ratio

CMRR

T_A= –40°C to 125°C

dB

V_S= 2.7 V, (V–) – 0.1 V < V_CM< (V+)

– 2 V (Main input pair)⁽²⁾

75

V_S= 2.7 V to 40 V, (V+) – 1 V < V_CM

< (V+) + 0.1 V (Aux input pair)

85

INPUT CAPACITANCE

Z_ID

Differential

100 || 9

6 || 1

MΩ || pF

TΩ || pF

Z_ICM

Common-mode

OPEN-LOOP GAIN

120

104

101

145

142

130

125

120

118

V_S= 40 V, V_CM= V–

(V–) + 0.1 V < V_O< (V+) – 0.1 V

T_A= –40°C to 125°C

V_S= 4 V, V_CM= V–

(V–) + 0.1 V < V_O< (V+) – 0.1 V

A_OL

Open-loop voltage gain

dB

V_S= 2.7 V, V_CM= V–

(V–) + 0.1 V < V_O< (V+) – 0.1 V⁽²⁾

8

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6.7 Electrical Characteristics (continued)

For V_S= (V+) – (V–) = 2.7 V to 40 V (±1.35 V to ±20 V) at T_A= 25°C, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and

V_{O UT}= V_S/ 2, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

FREQUENCY RESPONSE

GBW

SR

Gain-bandwidth product

4.5

21

2.5

1.5

2

MHz

V/µs

Slew rate

V_S= 40 V, G = +1, C_L= 20 pF

To 0.01%, V_S= 40 V, V_STEP= 10 V , G = +1, C_L= 20 pF

To 0.01%, V_S= 40 V, V_STEP= 2 V , G = +1, C_L= 20 pF

To 0.1%, V_S= 40 V, V_STEP= 10 V , G = +1, C_L= 20 pF

To 0.1%, V_S= 40 V, V_STEP= 2 V , G = +1, C_L= 20 pF

G = +1, R_L= 10 kΩ, C_L= 20 pF

t_S

Settling time

µs

1

Phase margin

60

400

°

Overload recovery time

V_IN× gain > V_S

ns

Total harmonic distortion

+ noise ⁽¹⁾

THD+N

V_S= 40 V, V_O= 3 V_RMS, G = 1, f = 1 kHz

0.00021%

OUTPUT

V_S= 40 V, R_L= no load⁽²⁾

5

50

10

55

250

6

V_S= 40 V, R_L= 10 kΩ

V_S= 40 V, R_L= 2 kΩ

V_S= 2.7 V, R_L= no load⁽²⁾

V_S= 2.7 V, R_L= 10 kΩ

V_S= 2.7 V, R_L= 2 kΩ

200

1

Voltage output swing

from rail

Positive and negative rail headroom

mV

5

12

40

25

I_SC

Short-circuit current

Capacitive load drive

±75

1000

mA

pF

C_LOAD

Open-loop output

impedance

Z_O

f = 1 MHz, I_O= 0 A

525

Ω

POWER SUPPLY

V_CM= V–, I_O= 0 A

560

685

691

750

769

V_CM= V–, I_O= 0 A, (OPA991-Q1)

V_CM= V–, I_O= 0 A

Quiescent current per

amplifier

I_Q

µA

T_A= –40°C to 125°C

V_CM= V–, I_O= 0 A, (OPA991-Q1)

(1) Third-order filter; bandwidth = 80 kHz at –3 dB.

(2) Specified by characterization only.

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6.8 Typical Characteristics

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

33

30

27

24

21

18

15

12

9

50

40

30

20

10

0

6

3

0

D001

D002

Offset Voltage Drift (µV/C)

Offset Voltage (µV)

Distribution from 60 amplifiers

Distribution from 15462 amplifiers, T_A= 25°C

Figure 6-2. Offset Voltage Drift Distribution

Figure 6-1. Offset Voltage Production Distribution

900

700

400

300

200

100

0

500

300

100

-100

-300

-500

-700

-900

-100

-200

-300

-400

-40

-20

0

20

40

60

80

100 120 140

-40 -20

0

20

40

60

80

100 120 140

Temperature (°C)

D004

D003

V_CM= V+

Figure 6-3. Offset Voltage vs Temperature

V_CM= V–

Figure 6-4. Offset Voltage vs Temperature

800

600

400

200

0

800

600

400

200

0

-200

-400

-600

-800

-200

-400

-600

-800

-20

-15

-10

-5

0

5

10

15

20

16

16.5

17

17.5

18

18.5

19

19.5

20

VCM

D005

T_A= 25°C

Figure 6-5. Offset Voltage vs Common-Mode Voltage

Figure 6-6. Offset Voltage vs Common-Mode Voltage (Transition

Region)

10

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6.8 Typical Characteristics (continued)

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

800

600

400

200

0

800

600

400

200

0

-200

-400

-600

-800

-200

-400

-600

-800

-20

-15

-10

-5

0

5

10

15

20

-20

-15

-10

-5

0

5

10

15

20

VCM

D006

D007

T_A= 125°C

T_A= –40°C

Figure 6-8. Offset Voltage vs Common-Mode Voltage

200

Figure 6-7. Offset Voltage vs Common-Mode Voltage

600

500

400

300

200

100

0

100

90

80

70

60

50

40

30

20

10

0

Gain (dB)

Phase (ꢀ)

175

150

125

100

75

50

-100

-200

-300

-400

-500

-600

25

0

-25

-50

-75

-100

-10

-20

0

5

10

15

20

25

30

35

40

45

100

1k

10k

100k

1M

10M

Supply Voltage (V)

Frequency (Hz)

D008

C002

C_L= 20 pF

Figure 6-9. Offset Voltage vs Power Supply

Figure 6-10. Open-Loop Gain and Phase vs Frequency

80

70

60

50

40

30

20

10

0

6

4.5

3

G = ꢀ1

G = 1

G = 10

G = 100

G = 1000

1.5

0

-1.5

-3

-4.5

I_Bꢀ

I_B+

I_OS

-6

-10

-20

-7.5

-20 -16 -12

-8

-4

0

4

8

12

16

20

100

1k

10k

100k

1M

10M

Common Mode Voltage (V)

Frequency (Hz)

D010

C001

Figure 6-12. Input Bias Current vs Common-Mode Voltage

Figure 6-11. Closed-Loop Gain vs Frequency

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6.8 Typical Characteristics (continued)

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

150

125

100

75

V+

V+ ꢀ 1 V

V+ ꢀ 2 V

V+ ꢀ 3 V

V+ ꢀ 4 V

V+ ꢀ 5 V

V+ ꢀ 6 V

V+ ꢀ 7 V

V+ ꢀ 8 V

V+ ꢀ 9 V

V+ ꢀ 10 V

I_Bꢀ

I_B+

I_OS

50

25

0

-25

-50

-75

-100

-40°C

25°C

125°C

-40

-20

0

20

40

60

80

100 120 140

0

10

20

30

40

50

60

70

80

90 100

Temperature (°C)

Output Current (mA)

D011

D012

Figure 6-13. Input Bias Current vs Temperature

Figure 6-14. Output Voltage Swing vs Output Current (Sourcing)

Vꢀ + 8 V

135

-40°C

25°C

125°C

CMRR

PSRR+

PSRRꢀ

120

Vꢀ + 7 V

Vꢀ + 6 V

Vꢀ + 5 V

Vꢀ + 4 V

Vꢀ + 3 V

Vꢀ + 2 V

Vꢀ + 1 V

Vꢀ

105

90

75

60

45

30

15

0

10

20

30

40

50

60

70

80

90 100

100

1k

10k

100k

1M

10M

Output Current (mA)

Frequency (Hz)

D012

C003

Figure 6-15. Output Voltage Swing vs Output Current (Sinking)

Figure 6-16. CMRR and PSRR vs Frequency

135

130

125

120

170

165

160

155

150

145

140

115

PMOS (V_CMꢀ V+ ꢁ 1.5 V)

110

NMOS (V_CM V+ ꢁ 1.5 V)

105

100

95

90

85

-40

-20

0

20

40

60

80

100 120 140

-40 -20

0

20

40

60

80

100 120 140

Temperature (°C)

D015

D016

f = 0 Hz

Figure 6-17. CMRR vs Temperature (dB)

Figure 6-18. PSRR vs Temperature (dB)

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6.8 Typical Characteristics (continued)

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

1

0.8

0.6

0.4

0.2

0

200

100

10

-0.2

-0.4

-0.6

-0.8

-1

1

10

100

1k

10k

100k

Time (1s/div)

Frequency (Hz)

C017

C019

Figure 6-20. Input Voltage Noise Spectral Density vs Frequency

Figure 6-19. 0.1-Hz to 10-Hz Noise

-32

-40

-32

R_L= 10 kꢀ

R_L= 2 kꢀ

R_L= 604 ꢀ

R_L= 128 ꢀ

-40

R_L= 604 ꢀ

R_L= 2 kꢀ

R_L= 10 kꢀ

-48

-56

-64

-72

-80

-88

-96

-104

-112

-104

-112

100

1k

10k

0.001

0.01

0.1

1

10 20

Frequency (Hz)

Amplitude (Vrms)

C012

C023

BW = 80 kHz, V_OUT= 1 V_RMS

BW = 80 kHz, f = 1 kHz

Figure 6-22. THD+N vs Output Amplitude

Figure 6-21. THD+N Ratio vs Frequency

580

570

560

550

540

530

520

510

500

490

480

700

675

650

625

600

575

550

525

500

475

450

0

4

8

12

16

20

24

28

32

36

40

-40

-20

0

20

40

60

80

100 120 140

Supply Voltage (V)

Temperature (°C)

D021

D022

V_CM= V–

Figure 6-23. Quiescent Current vs Supply Voltage

Figure 6-24. Quiescent Current vs Temperature

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6.8 Typical Characteristics (continued)

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

140

135

130

125

120

115

700

650

600

550

500

450

400

350

300

250

200

150

V_S= 4 V

V_S= 40 V

-40 -20

0

20

40

60

80

100 120 140

100

1k

10k

100k

1M

10M

Temperature (°C)

Frequency (Hz)

D023

C013

Figure 6-25. Open-Loop Voltage Gain vs Temperature (dB)

Figure 6-26. Open-Loop Output Impedance vs Frequency

60

80

70

60

50

40

30

50

40

30

20

R_ISO= 0 ꢀ, Positive Overshoot

R_ISO= 0 ꢀ, Negative Overshoot

R_ISO= 50 ꢀ, Positive Overshoot

R_ISO= 50 ꢀ, Negative Overshoot

R_ISO= 0 ꢀ, Negative Overshoot

10

0

10

0

R_ISO= 50 ꢀ, Positive Overshoot

R_ISO= 50 ꢀ, Negative Overshoot

0

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

0

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

Cap Load (pF)

C007

C008

G = –1, 10-mV output step

G = 1, 10-mV output step

Figure 6-27. Small-Signal Overshoot vs Capacitive Load

Figure 6-28. Small-Signal Overshoot vs Capacitive Load

60

Input

Output

50

40

30

20

10

Time (20us/div)

0

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

Cap Load (pF)

C016

C009

V_IN= ±20 V; V_S= V_OUT= ±17 V

Figure 6-30. No Phase Reversal

Figure 6-29. Phase Margin vs Capacitive Load

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6.8 Typical Characteristics (continued)

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

Input

Output

Time (100ns/div)

C018

C010

C005

C018

C011

C005

G = –10

Figure 6-31. Positive Overload Recovery

Figure 6-32. Negative Overload Recovery

Input

Output

Input

Output

Time (300ns/div)

Time (1µs/div)

C_L= 20 pF, G = -1, 20-mV step response

C_L= 20 pF, G = 1, 20-mV step response

Figure 6-34. Small-Signal Step Response

Figure 6-33. Small-Signal Step Response, Rising

Input

Output

Input

Output

Time (300ns/div)

C_L= 20 pF, G = 1

Figure 6-35. Large-Signal Step Response (Rising)

Figure 6-36. Large-Signal Step Response (Falling)

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6.8 Typical Characteristics (continued)

at T_A= 25°C, V_S= ±20 V, V_CM= V_S/ 2, R_LOAD= 10 kΩ connected to V_S/ 2, and C_L= 10 pF (unless otherwise noted)

100

80

60

Input

Output

40

20

Sourcing

Sinking

0

-20

-40

-60

-80

-100

Time (2µs/div)

-40 -20

0

20

40

60

80

100 120 140

Temperature (°C)

C021

D014

C_L= 20 pF, G = –1

Figure 6-37. Large-Signal Step Response

Figure 6-38. Short-Circuit Current vs Temperature

-50

45

40

35

30

25

20

15

10

5

V_S= 40 V

V_S= 30 V

V_S= 15 V

V_S= 2.7 V

-60

-70

-80

-90

-100

-110

-120

-130

0

1k

10k

100k

1M

10M

100

1k

10k

100k

1M

10M

Frequency (Hz)

C020

C014

Figure 6-39. Maximum Output Voltage vs Frequency

Figure 6-40. Channel Separation vs Frequency

110

100

90

80

70

60

50

40

1M

10M

100M

Frequency (Hz)

1G

C004

Figure 6-41. EMIRR (Electromagnetic Interference Rejection Ratio) at Inputs vs Frequency

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7 Detailed Description

7.1 Overview

The OPAx991-Q1 family (OPA991-Q1, OPA2991-Q1, and OPA4991-Q1) is a new generation of 40-V general

purpose operational amplifiers.

These devices offer excellent DC precision and AC performance, including rail-to-rail input/output, low offset

(±125 µV, typ), low offset drift (±0.3 µV/°C, typ), and 4.5-MHz bandwidth.

Unique features such as differential and common-mode input-voltage range to the supply rail, high output current

(±75 mA) and high slew rate (21 V/µs) make the OPAx991-Q1 a robust, high-performance operational amplifier

for high-voltage automotive applications.

7.2 Functional Block Diagram

+

NCH Input

Stage

œ

IN+

+

40-V

OUT

Output

Stage

Differential

MUX-Friendly

Front End

Slew

Boost

Shutdown

Circuitry

œ

IN-

+

PCH Input

Stage

œ

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7.3 Feature Description

7.3.1 Input Protection Circuitry

The OPAx991-Q1 uses a unique input architecture to eliminate the requirement for input protection diodes

but still provides robust input protection under transient conditions. Figure 7-1 shows conventional input diode

protection schemes that are activated by fast transient step responses and introduce signal distortion and

settling time delays because of alternate current paths, as shown in Figure 7-2. For low-gain circuits, these

fast-ramping input signals forward-bias back-to-back diodes, causing an increase in input current and resulting in

extended settling time.

V+

V_IN+

V_OUT

OPAx991

~0.7 V

40 V

V_INꢀ

Vꢀ

OPAx991 Provides Full 40-V

Differential Input Range

Conventional Input Protection

Limits Differential Input Range

Figure 7-1. OPAx991-Q1 Input Protection Does Not Limit Differential Input Capability

1

R_{on_mux}

V_n= 10 V

R_FILT

10 V

S_n

D

1

2

~œ9.3 V

10 V

C_FILT

C_S

C_D

VINœ

2

R_{on_mux}

S_n+1

V_n+1= œ10 V R_FILT

œ10 V

~0.7 V

VOUT

C_FILT

C_S

I_{diode_transient}

VIN+

œ10 V

Input Low-Pass Filter

Simplified Mux Model

Buffer Amplifier

Figure 7-2. Back-to-Back Diodes Create Settling Issues

The OPAx991-Q1 family of operational amplifiers provides a true high-impedance differential input capability

for high-voltage applications using a patented input protection architecture that does not introduce additional

signal distortion or delayed settling time, making the device an optimal op amp for multichannel, high-switched,

input applications. The OPAx991-Q1 tolerates a maximum differential swing (voltage between inverting and

non-inverting pins of the op amp) of up to 40 V, making the device suitable for use as a comparator or in

applications with fast-ramping input signals such as data-acquisition systems; see the TI TechNote MUX-Friendly

Precision Operational Amplifiers for more information.

7.3.2 EMI Rejection

The OPAx991-Q1 uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI from

sources such as wireless communications and densely-populated boards with a mix of analog signal chain and

digital components. EMI immunity can be improved with circuit design techniques; the OPAx991-Q1 benefits

from these design improvements. Texas Instruments has developed the ability to accurately measure and

quantify the immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz

to 6 GHz. Figure 7-3 shows the results of this testing on the OPAx991-Q1. Table 7-1 shows the EMIRR IN+

values for the OPAx991-Q1 at particular frequencies commonly encountered in real-world applications. The EMI

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Rejection Ratio of Operational Amplifiers application report contains detailed information on the topic of EMIRR

performance as it relates to op amps and is available for download from www.ti.com.

110

100

90

80

70

60

50

40

1M

10M

100M

1G

Frequency (Hz)

C004

Figure 7-3. EMIRR Testing

Table 7-1. OPAx991-Q1 EMIRR IN+ for Frequencies of Interest

FREQUENCY

APPLICATION OR ALLOCATION

EMIRR IN+

Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)

applications

400 MHz

73.2 dB

Global system for mobile communications (GSM) applications, radio communication, navigation,

GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications

900 MHz

1.8 GHz

2.4 GHz

3.6 GHz

5 GHz

82.5 dB

89.7 dB

93.9 dB

95.7 dB

98.0 dB

GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)

802.11b, 802.11g, 802.11n, Bluetooth^®, mobile personal communications, industrial, scientific and

medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)

Radiolocation, aero communication and navigation, satellite, mobile, S-band

802.11a, 802.11n, aero communication and navigation, mobile communication, space and satellite

operation, C-band (4 GHz to 8 GHz)

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7.3.3 Thermal Protection

The internal power dissipation of any amplifier causes its internal (junction) temperature to rise. This

phenomenon is called self heating. The absolute maximum junction temperature of the OPAx991-Q1 is 150°C.

Exceeding this temperature causes damage to the device. The OPAx991-Q1 has a thermal protection feature

that reduces damage from self heating. The protection works by monitoring the temperature of the device and

turning off the op amp output drive for temperatures above 170°C. Figure 7-4 shows an application example for

the OPAx991-Q1 that has significant self heating because of its power dissipation (0.81 W). Thermal calculations

indicate that for an ambient temperature of 65°C, the device junction temperature will reach 177°C. The actual

device, however, turns off the output drive to recover towards a safe junction temperature. Figure 7-4 shows how

the circuit behaves during thermal protection. During normal operation, the device acts as a buffer so the output

is 3 V. When self heating causes the device junction temperature to increase above the internal limit, the thermal

protection forces the output to a high-impedance state and the output is pulled to ground through resistor R_L.

If the condition that caused excessive power dissipation is not removed, the amplifier will oscillate between a

shutdown and enabled state until the output fault is corrected.

3 V

T_A= 65°C

30 V

P_D= 0.81W

_JA= 138.7°C/W

0 V

T_J= 138.7°C/W × 0.81W + 65°C

T_J= 177.3°C (expected)

ꢀ

OPA991

170ºC

ꢁ

I_OUT= 30 mA

+

3 V

–

RL

100

+

–

V_IN

3 V

Figure 7-4. Thermal Protection

If the device continues to operate at high junction temperatures with high output power over a long period of

time, regardless if the device is or is not entering thermal shutdown, the thermal dissipation of the device can

slowly degrade performance of the device and eventually cause catastrophic destruction. Designers should be

careful to limit output power of the device at high temperatures, or control ambient and junction temperatures

under high output power conditions.

7.3.4 Capacitive Load and Stability

The OPAx991-Q1 features a resistive output stage capable of driving moderate capacitive loads, and by

leveraging an isolation resistor, the device can easily be configured to drive large capacitive loads. Increasing

the gain enhances the ability of the amplifier to drive greater capacitive loads; see Figure 7-5 and Figure 7-6.

The particular op amp circuit configuration, layout, gain, and output loading are some of the factors to consider

when establishing whether an amplifier will be stable in operation.

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80

70

60

50

40

30

20

10

60

50

40

30

20

10

0

R_ISO= 0 ꢀ, Positive Overshoot

R_ISO= 0 ꢀ, Negative Overshoot

R_ISO= 50 ꢀ, Positive Overshoot

R_ISO= 50 ꢀ, Negative Overshoot

R_ISO= 0 ꢀ, Positive Overshoot

R_ISO= 0 ꢀ, Negative Overshoot

R_ISO= 50 ꢀ, Positive Overshoot

R_ISO= 50 ꢀ, Negative Overshoot

0

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

0

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

Cap Load (pF)

C008

C007

Figure 7-5. Small-Signal Overshoot vs Capacitive

Load (10-mV Output Step, G = 1)

Figure 7-6. Small-Signal Overshoot vs Capacitive

Load (10-mV Output Step, G = –1)

For additional drive capability in unity-gain configurations, improve capacitive load drive by inserting a small

resistor, R_ISO, in series with the output, as shown in Figure 7-7. This resistor significantly reduces ringing

and maintains DC performance for purely capacitive loads. However, if a resistive load is in parallel with the

capacitive load, then a voltage divider is created, thus introducing a gain error at the output and slightly reducing

the output swing. The error introduced is proportional to the ratio R_ISO/ R_L, and is generally negligible at low

output levels. A high capacitive load drive makes the OPAx991-Q1 well suited for applications such as reference

buffers, MOSFET gate drives, and cable-shield drives. The circuit shown in Figure 7-7 uses an isolation resistor,

R_ISO, to stabilize the output of an op amp. R_ISOmodifies the open-loop gain of the system for increased phase

margin.

+V_s

V_out

R_iso

+

C_load

+

V_in

-V_s

œ

Figure 7-7. Extending Capacitive Load Drive With the OPAx991-Q1

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7.3.5 Common-Mode Voltage Range

The OPAx991-Q1 is a 40-V, true rail-to-rail input operational amplifier with an input common-mode range that

extends 100 mV beyond either supply rail. This wide range is achieved with paralleled complementary N-channel

and P-channel differential input pairs, as shown in Figure 7-8. The N-channel pair is active for input voltages

close to the positive rail, typically (V+) – 1 V to 100 mV above the positive supply. The P-channel pair is active

for inputs from 100 mV below the negative supply to approximately (V+) – 2 V. There is a small transition region,

typically (V+) – 2 V to (V+) – 1 V in which both input pairs are on. This transition region can vary modestly with

process variation, and within this region PSRR, CMRR, offset voltage, offset drift, noise, and THD performance

may be degraded compared to operation outside this region.

Figure 6-5 shows this transition region for a typical device in terms of input voltage offset in more detail.

For more information on common-mode voltage range and PMOS/NMOS pair interaction, see Op Amps With

Complementary-Pair Input Stages application note.

V+

IN-

PMOS

NMOS

IN+

NMOS

V-

Figure 7-8. Rail-to-Rail Input Stage

7.3.6 Phase Reversal Protection

The OPAx991-Q1 family has internal phase-reversal protection. Many op amps exhibit phase reversal when the

input is driven beyond its linear common-mode range. This condition is most often encountered in non-inverting

circuits when the input is driven beyond the specified common-mode voltage range, causing the output to

reverse into the opposite rail. The OPAx991-Q1 is a rail-to-rail input op amp; therefore, the common-mode range

can extend beyond the rails. Input signals beyond the rails do not cause phase reversal; instead, the output

limits into the appropriate rail. This performance is shown in Figure 7-9. For more information on phase reversal,

see Op Amps With Complementary-Pair Input Stages application note.

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Input

Output

Time (20us/div)

C016

Figure 7-9. No Phase Reversal

7.3.7 Electrical Overstress

Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress

(EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even

the output pin. Each of these different pin functions have electrical stress limits determined by the voltage

breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to

the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them

from accidental ESD events both before and during product assembly.

Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is

helpful. Figure 7-10 shows an illustration of the ESD circuits contained in the OPAx991-Q1 (indicated by the

dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the

input and output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption

device or the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to

remain inactive during normal circuit operation.

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TVS

R_F

+V_S

V_DD

OPAx991

100

R₁

R_S

IN–

IN+

–

+

100

Power-Supply

ESD Cell

R_L

I_D

+

–

V_IN

V_SS

–V_S

TVS

Figure 7-10. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application

An ESD event is very short in duration and very high voltage (for example; 1 kV, 100 ns), whereas an EOS event

is long duration and lower voltage (for example; 50 V, 100 ms). The ESD diodes are designed for out-of-circuit

ESD protection (that is, during assembly, test, and storage of the device before being soldered to the PCB).

During an ESD event, the ESD signal is passed through the ESD steering diodes to an absorption circuit

(labeled ESD power-supply circuit). The ESD absorption circuit clamps the supplies to a safe level.

Although this behavior is necessary for out-of-circuit protection, excessive current and damage is caused if

activated in-circuit. A transient voltage suppressors (TVS) can be used to prevent against damage caused by

turning on the ESD absorption circuit during an in-circuit ESD event. Using the appropriate current limiting

resistors and TVS diodes allows for the use of device ESD diodes to protect against EOS events.

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7.3.8 Overload Recovery

Overload recovery is defined as the time required for the op amp output to recover from a saturated state to

a linear state. The output devices of the op amp enter a saturation region when the output voltage exceeds

the rated operating voltage, either due to the high input voltage or the high gain. After the device enters the

saturation region, the charge carriers in the output devices require time to return back to the linear state. After

the charge carriers return back to the linear state, the device begins to slew at the specified slew rate. Thus, the

propagation delay in case of an overload condition is the sum of the overload recovery time and the slew time.

The overload recovery time for the OPAx991-Q1 is approximately 400 ns.

7.3.9 Typical Specifications and Distributions

Designers often have questions about a typical specification of an amplifier in order to design a more robust

circuit. Due to natural variation in process technology and manufacturing procedures, every specification of an

amplifier will exhibit some amount of deviation from the ideal value, like an amplifier's input offset voltage. These

deviations often follow Gaussian ("bell curve"), or normal distributions, and circuit designers can leverage this

information to guardband their system, even when there is not a minimum or maximum specification in the

Electrical Characteristics table.

0.00312% 0.13185%

0.13185% 0.00312%

0.00002%

2.145% 13.59% 34.13% 34.13% 13.59% 2.145%

1

1 1 1 1 1 1 1 1

1

ꢀ-61 ꢀ-51 ꢀ-41 ꢀ-31 ꢀ-21 ꢀ-1

ꢀ+1 ꢀ+21 ꢀ+31 ꢀ+41 ꢀ+51 ꢀ+61

ꢀ

Figure 7-11. Ideal Gaussian Distribution

Figure 7-11 shows an example distribution, where µ, or mu, is the mean of the distribution, and where σ,

or sigma, is the standard deviation of a system. For a specification that exhibits this kind of distribution,

approximately two-thirds (68.26%) of all units can be expected to have a value within one standard deviation, or

one sigma, of the mean (from µ – σ to µ + σ).

Depending on the specification, values listed in the typical column of the Electrical Characteristics table are

represented in different ways. As a general rule of thumb, if a specification naturally has a nonzero mean

(for example, like gain bandwidth), then the typical value is equal to the mean (µ). However, if a specification

naturally has a mean near zero (like input offset voltage), then the typical value is equal to the mean plus one

standard deviation (µ + σ) in order to most accurately represent the typical value.

You can use this chart to calculate approximate probability of a specification in a unit; for example, for OPAx991-

Q1, the typical input voltage offset is 125 µV, so 68.2% of all OPAx991-Q1 devices are expected to have an

offset from –125 µV to 125 µV. At 4 σ (±500 µV), 99.9937% of the distribution has an offset voltage less than

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±500 µV, which means 0.0063% of the population is outside of these limits, which corresponds to about 1 in

15,873 units.

Specifications with a value in the minimum or maximum column are assured by TI, and units outside these limits

will be removed from production material. For example, the OPAx991-Q1 family has a maximum offset voltage of

895 µV at 25°C, and even though this corresponds to more than 5 σ (≈1 in 1.7 million units), which is extremely

unlikely, TI assures that any unit with larger offset than 895 µV will be removed from production material.

For specifications with no value in the minimum or maximum column, consider selecting a sigma value of

sufficient guardband for your application, and design worst-case conditions using this value. For example, the

6-σ value corresponds to about 1 in 500 million units, which is an extremely unlikely chance, and could be an

option as a wide guardband to design a system around. In this case, the OPAx991-Q1 family does not have a

maximum or minimum for offset voltage drift, but based on Figure 6-2 and the typical value of 0.3 µV/°C in the

Electrical Characteristics table, it can be calculated that the 6-σ value for offset voltage drift is about 1.8 µV/°C.

When designing for worst-case system conditions, this value can be used to estimate the worst possible offset

across temperature without having an actual minimum or maximum value.

However, process variation and adjustments over time can shift typical means and standard deviations, and

unless there is a value in the minimum or maximum specification column, TI cannot assure the performance of a

device. This information should be used only to estimate the performance of a device.

7.4 Device Functional Modes

The OPAx991-Q1 has a single functional mode and is operational when the power-supply voltage is greater than

2.7 V (±1.35 V). The maximum power supply voltage for the OPAx991-Q1 is 40 V (±20 V).

26

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8 Application and Implementation

Note

Information in the following applications sections is not part of the TI component specification,

and TI does not warrant its accuracy or completeness. TI’s customers are responsible for

determining suitability of components for their purposes, as well as validating and testing their design

implementation to confirm system functionality.

8.1 Application Information

The OPAx991-Q1 family offers excellent DC precision and AC performance. These devices operate up to 40-V

supply rails and offer true rail-to-rail input/output, low offset voltage and offset voltage drift, as well as 4.5-MHz

bandwidth and high output drive. These features make the OPAx991-Q1 a robust, high-performance operational

amplifier for high-voltage industrial applications.

8.2 Typical Applications

8.2.1 Low-Side Current Measurement

Figure 8-1 shows the OPAx991-Q1 configured in a low-side current sensing application. For a full analysis of

the circuit shown in Figure 8-1 including theory, calculations, simulations, and measured data, see TI Precision

Design TIPD129, 0-A to 1-A Single-Supply Low-Side Current-Sensing Solution.

V_CC

5 V

LOAD

OPA991

+

V_OUT

–

R_SHUNT

I_LOAD

100 m

LM7705

R_F

360 k

R_G

7.5 k

Figure 8-1. OPAx991-Q1 in a Low-Side, Current-Sensing Application

8.2.1.1 Design Requirements

The design requirements for this design are:

•

Load current: 0 A to 1 A

Output voltage: 4.9 V

Maximum shunt voltage: 100 mV

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8.2.1.2 Detailed Design Procedure

The transfer function of the circuit in Figure 8-1 is given in Equation 1.

V_OUT= I_LOADìR_SHUNTìGain

(1)

The load current (I_LOAD) produces a voltage drop across the shunt resistor (R_SHUNT). The load current is set

from 0 A to 1 A. To keep the shunt voltage below 100 mV at maximum load current, the largest shunt resistor is

defined using Equation 2.

V_{SHUNT _MAX}

100mV

1A

R_SHUNT

=

=100mW

I_{LOAD_MAX}

(2)

Using Equation 2, R_SHUNTis calculated to be 100 mΩ. The voltage drop produced by I_LOADand R_SHUNTis

amplified by the OPA991-Q1 to produce an output voltage of 0 V to 4.9 V. The gain needed by the OPA991-Q1

to produce the necessary output voltage is calculated using Equation 3.

V

_{OUT _MAX}- V_{OUT _MIN}

(

)

Gain =

V_{IN_MAX}- V

(

)

IN_MIN

(3)

Using Equation 3, the required gain is calculated to be 49 V/V, which is set with resistors R_Fand R_G. Equation 4

is used to size the resistors, R_Fand R_G, to set the gain of the OPA991-Q1 to 49 V/V.

R

(

)

F

Gain = 1+

R

G

(4)

Choosing R_Fas 360 kΩ, R_Gis calculated to be 7.5 kΩ. R_Fand R_Gwere chosen as 360 kΩ and 7.5 kΩ because

they are standard value resistors that create a 49:1 ratio. Other resistors that create a 49:1 ratio can also be

used. Figure 8-2 shows the measured transfer function of the circuit shown in Figure 8-1.

8.2.1.3 Application Curve

5

4

3

2

1

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

I_LOAD(A)

1

Figure 8-2. Low-Side, Current-Sense, Transfer Function

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9 Power Supply Recommendations

The OPAx991-Q1 is specified for operation from 2.7 V to 40 V (±1.35 V to ±40 V); many specifications apply

from –40°C to 125°C. Parameters that can exhibit significant variance with regard to operating voltage or

temperature are presented in Typical Characteristics.

CAUTION

Supply voltages larger than 40 V can permanently damage the device; see the Absolute Maximum

Ratings.

Place 0.1-µF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or

high-impedance power supplies. For more detailed information on bypass capacitor placement, refer to Layout.

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10 Layout

10.1 Layout Guidelines

For best operational performance of the device, use good PCB layout practices, including:

•

Noise can propagate into analog circuitry through the power pins of the circuit as a whole and op amp itself.

Bypass capacitors are used to reduce the coupled noise by providing low-impedance power sources local to

the analog circuitry.

– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as

close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-

supply applications.

•

Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective

methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.

A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital

and analog grounds paying attention to the flow of the ground current.

In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as

possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicular is much better as

opposed to in parallel with the noisy trace.

•

Place the external components as close to the device as possible. As illustrated in Figure 10-2, keeping RF

and RG close to the inverting input minimizes parasitic capacitance.

Keep the length of input traces as short as possible. Always remember that the input traces are the most

sensitive part of the circuit.

Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce

leakage currents from nearby traces that are at different potentials.

•

Cleaning the PCB following board assembly is recommended for best performance.

Any precision integrated circuit may experience performance shifts due to moisture ingress into the plastic

package. Following any aqueous PCB cleaning process, baking the PCB assembly is recommended to

remove moisture introduced into the device packaging during the cleaning process. A low temperature, post

cleaning bake at 85°C for 30 minutes is sufficient for most circumstances.

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10.2 Layout Example

VIN

+

VOUT

RG

RF

Figure 10-1. Schematic Representation

Place components close

to device and to each

other to reduce parasitic

errors

Run the input traces

as far away from

the supply lines

as possible

VS+

RF

NC

Use a low-ESR,

ceramic bypass

capacitor

RG

GND

œIN

+IN

Vœ

V+

OUTPUT

NC

VIN

GND

VSœ

VOUT

Ground (GND) plane on another layer

Use low-ESR,

ceramic bypass

capacitor

Figure 10-2. Operational Amplifier Board Layout for Noninverting Configuration

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11 Device and Documentation Support

11.1 Device Support

11.1.1 Development Support

11.1.1.1 TINA-TI^™(Free Software Download)

TINA^™is a simple, powerful, and easy-to-use circuit simulation program based on a SPICE engine. TINA-TI is a

free, fully-functional version of the TINA software, preloaded with a library of macro models in addition to a range

of both passive and active models. TINA-TI provides all the conventional dc, transient, and frequency domain

analysis of SPICE, as well as additional design capabilities.

Available as a free download from the Analog eLab Design Center, TINA-TI offers extensive post-processing

capability that allows users to format results in a variety of ways. Virtual instruments offer the ability to select

input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic quick-start tool.

Note

These files require that either the TINA software (from DesignSoft^™) or TINA-TI software be installed.

Download the free TINA-TI software from the TINA-TI folder.

11.1.1.2 TI Precision Designs

The OPAx991 is featured in several TI Precision Designs, available online at http://www.ti.com/ww/en/analog/

precision-designs/. TI Precision Designs are analog solutions created by TI’s precision analog applications

experts and offer the theory of operation, component selection, simulation, complete PCB schematic and layout,

bill of materials, and measured performance of many useful circuits.

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation, see the following:

Texas Instruments, Analog Engineer's Circuit Cookbook: Amplifiers solution guide

Texas Instruments, AN31 Amplifier Circuit Collection application note

Texas Instruments, MUX-Friendly Precision Operational Amplifiers application brief

Texas Instruments, EMI Rejection Ratio of Operational Amplifiers application report

Texas Instruments, Op Amps With Complementary-Pair Input Stages application note

11.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on

Subscribe to updates to register and receive a weekly digest of any product information that has changed. For

change details, review the revision history included in any revised document.

11.4 Support Resources

TI E2E^™support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

11.5 Trademarks

TINA-TI^™are trademarks of Texas Instruments, Inc and DesignSoft, Inc.

TINA^™and DesignSoft^™are trademarks of DesignSoft, Inc.

TI E2E^™is a trademark of Texas Instruments.

Bluetooth^®is a registered trademark of Bluetooth SIG, Inc.

All trademarks are the property of their respective owners.

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11.6 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

11.7 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

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12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

34

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PACKAGE MATERIALS INFORMATION

www.ti.com

10-Dec-2021

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

OPA2991QDGKRQ1

OPA2991QDRQ1

OPA4991QDRQ1

OPA4991QDYYRQ1

VSSOP

SOIC

DGK

D

8

2500

3000

330.0

12.4

16.4

12.4

5.3

6.4

6.5

4.8

3.4

5.2

9.0

3.6

1.4

2.1

1.6

8.0

12.0

16.0

12.0

Q1

Q3

SOIC

D

14

SOT-

DYY

23-THIN

OPA4991QPWRQ1

OPA991QDBVRQ1

TSSOP

SOT-23

PW

14

5

3000

330.0

180.0

12.4

8.4

6.9

3.2

5.6

3.2

1.6

1.4

8.0

4.0

12.0

8.0

Q1

Q3

DBV

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

10-Dec-2021

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

OPA2991QDGKRQ1

OPA2991QDRQ1

OPA4991QDRQ1

OPA4991QDYYRQ1

OPA4991QPWRQ1

OPA991QDBVRQ1

VSSOP

SOIC

DGK

D

8

2500

3000

366.0

853.0

336.6

853.0

210.0

364.0

449.0

336.6

449.0

185.0

50.0

35.0

31.8

35.0

SOIC

D

14

5

SOT-23-THIN

TSSOP

DYY

PW

DBV

SOT-23

Pack Materials-Page 2

PACKAGE OUTLINE

SOT-23-THIN - 1.1 mm max height

PLASTIC SMALL OUTLINE

DYY0014A

C

3.36

3.16

SEATING PLANE

PIN 1 INDEX

AREA

A

0.1 C

12X 0.5

14

1

4.3

4.1

NOTE 3

2X

3

7

8

0.31

0.11

14X

0.1

C A

B

1.1 MAX

2.1

1.9

B

0.2

0.08

TYP

SEE DETAIL A

0.25

GAUGE PLANE

0°- 8°

0.1

0.0

0.63

0.33

DETAIL A

TYP

4224643/B 07/2021

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed

0.15 per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.50 per side.

5. Reference JEDEC Registration MO-345, Variation AB

www.ti.com

EXAMPLE BOARD LAYOUT

SOT-23-THIN - 1.1 mm max height

PLASTIC SMALL OUTLINE

DYY0014A

SYMM

14X (1.05)

1

14

14X (0.3)

SYMM

12X (0.5)

8

7

(R0.05) TYP

(3)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE: 20X

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

OPENING

METAL

NON- SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4224643/B 07/2021

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

SOT-23-THIN - 1.1 mm max height

PLASTIC SMALL OUTLINE

DYY0014A

SYMM

14X (1.05)

1

14

14X (0.3)

SYMM

12X (0.5)

8

7

(R0.05) TYP

(3)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE: 20X

4224643/B 07/2021

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE

DBV0005A

SOT-23 - 1.45 mm max height

S

C

A

L

E

4

.

0

SMALL OUTLINE TRANSISTOR

C

3.0

2.6

0.1 C

1.75

1.45

0.90

B

A

PIN 1

INDEX AREA

1

2

5

2X 0.95

1.9

3.05

2.75

1.9

4

3

0.5

5X

0.3

0.15

0.00

(1.1)

TYP

0.2

C A B

0.25

GAGE PLANE

0.22

0.08

TYP

8

0

TYP

0.6

0.3

TYP

SEATING PLANE

4214839/F 06/2021

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.25 mm per side.

www.ti.com

EXAMPLE BOARD LAYOUT

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

1

5

5X (0.6)

SYMM

(1.9)

2

3

2X (0.95)

4

(R0.05) TYP

(2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED METAL

0.07 MIN

ARROUND

0.07 MAX

ARROUND

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4214839/F 06/2021

NOTES: (continued)

5. Publication IPC-7351 may have alternate designs.

6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

1

5

5X (0.6)

SYMM

(1.9)

2

3

2X(0.95)

4

(R0.05) TYP

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4214839/F 06/2021

NOTES: (continued)

7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

8. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE

D0008A

SOIC - 1.75 mm max height

SCALE 2.800

SMALL OUTLINE INTEGRATED CIRCUIT

C

SEATING PLANE

.228-.244 TYP

[5.80-6.19]

.004 [0.1] C

A

PIN 1 ID AREA

6X .050

[1.27]

8

1

2X

.189-.197

[4.81-5.00]

NOTE 3

.150

[3.81]

4X (0 -15 )

4

5

8X .012-.020

[0.31-0.51]

B

.150-.157

[3.81-3.98]

NOTE 4

.069 MAX

[1.75]

.010 [0.25]

C A B

.005-.010 TYP

[0.13-0.25]

4X (0 -15 )

SEE DETAIL A

.010

[0.25]

.004-.010

[0.11-0.25]

0 - 8

.016-.050

[0.41-1.27]

DETAIL A

TYPICAL

(.041)

[1.04]

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.

Dimensioning and tolerancing per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed .006 [0.15] per side.

4. This dimension does not include interlead flash.

5. Reference JEDEC registration MS-012, variation AA.

www.ti.com

EXAMPLE BOARD LAYOUT

D0008A

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )

[1.55]

SYMM

SEE

DETAILS

1

8

8X (.024)

[0.6]

SYMM

(R.002 ) TYP

[0.05]

5

4

6X (.050 )

[1.27]

(.213)

[5.4]

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:8X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED

METAL

EXPOSED

METAL

.0028 MAX

[0.07]

.0028 MIN

[0.07]

ALL AROUND

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

D0008A

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )

[1.55]

SYMM

1

8

8X (.024)

[0.6]

SYMM

(R.002 ) TYP

[0.05]

5

4

6X (.050 )

[1.27]

(.213)

[5.4]

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.125 MM] THICK STENCIL

SCALE:8X

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

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型号：	OPA4991-Q1
厂家：	TEXAS INSTRUMENTS
描述：	OPAx991-Q1 Automotive, 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp
文件：	总54页 (文件大小：3662K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

OPA4991-Q1 [TI]

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