SM73307MM/NOPB [TI]
Dual Precision, 17 MHz, Low Noise, CMOS Input Amplifier;
| 型号： | SM73307MM/NOPB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | Dual Precision, 17 MHz, Low Noise, CMOS Input Amplifier 放大器 信息通信管理 光电二极管 |
| 文件： | 总25页 (文件大小：961K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
Dual Precision, 17 MHz, Low Noise, CMOS Input Amplifier
Check for Samples: SM73307
1
FEATURES
DESCRIPTION
The SM73307 is a dual, low noise, low offset, CMOS
input, rail-to-rail output precision amplifier with a high
gain bandwidth product. The SM73307 is ideal for a
variety of instrumentation applications including solar
photovoltaic.
2
•
Unless Otherwise Noted, Typical Values at VS
= 5V.
•
•
•
•
•
•
•
•
•
•
•
Renewable Energy Grade
Input Offset Voltage ±150 μV (max)
Input Bias Current 100 fA
Utilizing a CMOS input stage, the SM73307 achieves
an input bias current of 100 fA, an input referred
voltage noise of 5.8 nV/√Hz, and an input offset
voltage of less than ±150 μV. These features make
Input Voltage Noise 5.8 nV/√Hz
Gain Bandwidth Product 17 MHz
Supply Current 1.30 mA
the SM73307
applications.
a
superior choice for precision
Supply Voltage Range 1.8V to 5.5V
THD+N @ f = 1 kHz 0.001%
Consuming only 1.30 mA of supply current per
channel, the SM73307 offers a high gain bandwidth
product of 17 MHz, enabling accurate amplification at
high closed loop gains.
Operating Temperature Range −40°C to 125°C
Rail-to-rail Output Swing
8-Pin VSSOP Package
The SM73307 has a supply voltage range of 1.8V to
5.5V, which makes it an ideal choice for portable low
power applications with low supply voltage
requirements.
APPLICATIONS
•
•
•
•
•
Photovoltaic Electronics
Active Filters and Buffers
Sensor Interface Applications
Transimpedance Amplifiers
Automotive
The SM73307 is built with TI’s advanced VIP50
process technology and is offered in an 8-pin VSSOP
package.
The SM73307 incorporates enhanced manufacturing
and support processes for the photovoltaic and
automotive market, including defect detection
methodologies. Reliability qualification is compliant
with the requirements and temperature grades
defined in the Renewable Energy Grade and AEC-
Q100 standards.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011–2013, Texas Instruments Incorporated
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
ESD Tolerance(3)
Human Body Model
Machine Model
2000V
200V
Charge-Device Model
1000V
VIN Differential
±0.3V
Supply Voltage (VS = V+ – V−)
Voltage on Input/Output Pins
Storage Temperature Range
Junction Temperature(4)
Soldering Information
6.0V
V+ +0.3V, V− −0.3V
−65°C to 150°C
+150°C
Infrared or Convection (20 sec)
235°C
Wave Soldering Lead Temp. (10 sec)
260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional. For specifications and the test conditions, see the Electrical Characteristics Tables.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(4) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly onto a PC Board.
Operating Ratings(1)
Temperature Range(2)
Supply Voltage (VS = V+ – V−)
−40°C to 125°C
1.8V to 5.5V
2.0V to 5.5V
236°C/W
0°C ≤ TA ≤ 125°C
−40°C ≤ TA ≤ 125°C
8-Pin VSSOP
(2)
Package Thermal Resistance (θJA
)
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional. For specifications and the test conditions, see the Electrical Characteristics Tables.
(2) The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly onto a PC Board.
2.5V Electrical Characteristics
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 2.5V, V− = 0V ,VO = VCM = V+/2. Boldface limits apply
at the temperature extremes.
Symbol
Parameter
Conditions
−20°C ≤ TA ≤ 85°C
Min(1)
Typ(2)
Max(1)
Units
±180
±330
±20
VOS
Input Offset Voltage
μV
±180
±430
−40°C ≤ TA ≤ 125°C
±20
–1.75
0.05
0.05
Input Offset Voltage Temperature
Drift(3)(4)
TC VOS
±4
μV/°C
1
25
−40°C ≤ TA ≤ 85°C
−40°C ≤ TA ≤ 125°C
IB
Input Bias Current
VCM = 1.0V(5)(4)
pA
1
100
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration.
(3) Offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.
(4) This parameter is specified by design and/or characterization and is not tested in production.
(5) Positive current corresponds to current flowing into the device.
2
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
2.5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 2.5V, V− = 0V ,VO = VCM = V+/2. Boldface limits apply
at the temperature extremes.
Symbol
Parameter
Conditions
Min(1)
Typ(2)
Max(1)
Units
0.5
50
IOS
Input Offset Current
VCM = 1V(4)
0.006
pA
83
80
CMRR Common Mode Rejection Ratio
0V ≤ VCM ≤ 1.4V
100
100
98
dB
dB
V
2.0V ≤ V+ ≤ 5.5V
85
80
V− = 0V, VCM = 0
PSRR
Power Supply Rejection Ratio
1.8V ≤ V+ ≤ 5.5V
85
V− = 0V, VCM = 0
CMRR ≥ 80 dB
CMRR ≥ 78 dB
−0.3
–0.3
1.5
1.5
CMVR Common Mode Voltage Range
VO = 0.15 to 2.2V
84
80
92
95
RL = 2 kΩ to V+/2
AVOL
Open Loop Voltage Gain
dB
VO = 0.15 to 2.2V
90
86
RL = 10 kΩ to V+/2
70
77
RL = 2 kΩ to V+/2
RL = 10 kΩ to V+/2
RL = 2 kΩ to V+/2
RL = 10 kΩ to V+/2
25
Output Voltage Swing
High
60
66
20
mV from
either rail
VOUT
70
73
30
Output Voltage Swing
Low
60
62
15
Sourcing to V−
VIN = 200 mV(6)
36
30
52
IOUT
Output Current
Supply Current
mA
mA
Sinking to V+
7.5
5.0
15
VIN = −200 mV(6)
1.50
1.85
IS
Per Channel
1.10
AV = +1, Rising (10% to 90%)
AV = +1, Falling (90% to 10%)
8.3
10.3
14
SR
GBW
en
Slew Rate
V/μs
MHz
Gain Bandwidth
f = 400 Hz
f = 1 kHz
f = 1 kHz
6.8
Input Referred Voltage Noise Density
Input Referred Current Noise Density
nV/√Hz
pA/√Hz
5.8
in
0.01
f = 1 kHz, AV = 1, RL = 100 kΩ
VO = 0.9 VPP
0.003
0.004
THD+N Total Harmonic Distortion + Noise
%
f = 1 kHz, AV = 1, RL = 600Ω
VO = 0.9 VPP
(6) The short circuit test is a momentary open loop test.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
5V Electrical Characteristics
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2. Boldface limits apply at the
temperature extremes.
Symbol
Parameter
Conditions
−20°C ≤ TA ≤ 85°C
Min(1)
Typ(2)
Max(1)
Units
±150
±300
±10
VOS
Input Offset Voltage
μV
±150
±400
−40°C ≤ TA ≤ 125°C
±10
–1.75
0.1
Input Offset Voltage Temperature
Drift(3)(4)
TC VOS
±4
μV/°C
1
25
−40°C ≤ TA ≤ 85°C
−40°C ≤ TA ≤ 125°C
IB
Input Bias Current
Input Offset Current
VCM = 2.0V(5)(4)
pA
1
100
0.1
0.5
50
IOS
VCM = 2.0V(4)
0.01
100
100
98
pA
dB
85
82
CMRR Common Mode Rejection Ratio
0V ≤ VCM ≤ 3.7V
2.0V ≤ V+ ≤ 5.5V
85
80
V− = 0V, VCM = 0
PSRR
Power Supply Rejection Ratio
dB
V
1.8V ≤ V+ ≤ 5.5V
85
V− = 0V, VCM = 0
CMRR ≥ 80 dB
CMRR ≥ 78 dB
−0.3
–0.3
4
4
CMVR Common Mode Voltage Range
VO = 0.3 to 4.7V
84
80
90
95
RL = 2 kΩ to V+/2
AVOL
Open Loop Voltage Gain
dB
VO = 0.3 to 4.7V
90
86
RL = 10 kΩ to V+/2
70
77
RL = 2 kΩ to V+/2
RL = 10 kΩ to V+/2
RL = 2 kΩ to V+/2
RL = 10 kΩ to V+/2
32
Output Voltage Swing
High
60
66
22
mV from
either rail
VOUT
75
78
45
Output Voltage Swing
Low
60
62
20
Sourcing to V−
VIN = 200 mV(6)
46
38
66
IOUT
Output Current
Supply Current
mA
mA
Sinking to V+
10.5
6.5
23
VIN = −200 mV(6)
1.70
2.05
IS
(per channel)
1.30
(1) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the
Statistical Quality Control (SQC) method.
(2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration.
(3) Offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature change.
(4) This parameter is specified by design and/or characterization and is not tested in production.
(5) Positive current corresponds to current flowing into the device.
(6) The short circuit test is a momentary open loop test.
4
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
5V Electrical Characteristics (continued)
Unless otherwise specified, all limits are specified for TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2. Boldface limits apply at the
temperature extremes.
Symbol
Parameter
Conditions
AV = +1, Rising (10% to 90%)
AV = +1, Falling (90% to 10%)
Min(1)
6.0
Typ(2)
9.5
Max(1)
Units
V/μs
SR
Slew Rate
7.5
11.5
17
GBW
en
Gain Bandwidth
MHz
f = 400 Hz
f = 1 kHz
f = 1 kHz
7.0
Input Referred Voltage Noise Density
Input Referred Current Noise Density
nV/√Hz
pA/√Hz
5.8
in
0.01
f = 1 kHz, AV = 1, RL = 100 kΩ
VO = 4 VPP
0.001
0.004
THD+N Total Harmonic Distortion + Noise
%
f = 1 kHz, AV = 1, RL = 600Ω
VO = 4 VPP
Connection Diagram
1
2
3
4
8
7
6
5
+
OUT A
-IN A
V
-
OUT B
-IN B
+
+IN A
-
+
-
+IN B
V
Figure 1. 8-Pin VSSOP – Top View
See Package Number DGK
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
5
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
Typical Performance Characteristics
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Offset Voltage Distribution
Input Referred Voltage Noise
25
100
V
V
= 5V
S
V
= 5.5V
S
= V /2
S
CM
20 UNITS TESTED: 10,000
V
= 2.5V
S
15
10
5
10
0
-200
1
1k
1
10
100
10k
100k
-100
0
100
200
FREQUENCY (Hz)
OFFSET VOLTAGE (mV)
Figure 2.
Figure 3.
Offset Voltage Distribution
Offset Voltage Distribution
25
25
20
V
V
= 2.5V
V
V
= 5V
S
S
= V /2
S
= V /2
S
CM
CM
UNITS TESTED:10,000
20 UNITS TESTED: 10,000
15
10
5
15
10
5
0
-200
0
-200
-100
0
100
200
-100
0
100
200
OFFSET VOLTAGE (mV)
OFFSET VOLTAGE (mV)
Figure 4.
Figure 5.
Offset Voltage
vs.
VCM
TCVOS Distribution
25
20
200
150
100
50
-40°C Ç T Ç 125°C
A
V
S
= 1.8V
V
= 2.5V, 5V
S
-40°C
V
= V /2
S
CM
UNITS TESTED:
10,000
15
10
5
25°C
0
-50
125°C
-100
-150
-200
0
-0.3
0
0.3
0.9
1.2
1.5
0.6
(V)
-4
-3
-2
(mV/°C)
-1
0
TCV
V
OS
CM
Figure 6.
Figure 7.
6
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Offset Voltage
Offset Voltage
vs.
vs.
VCM
VCM
200
200
150
100
V
S
= 2.5V
V = 5V
S
150
100
50
-40°C
25°C
-40°C
25°C
50
0
0
125°C
125°C
-50
-50
-100
-150
-200
-100
-150
-200
-0.3
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1
(V)
-0.3
0.7
1.7
2.7
(V)
3.7
4.7
V
CM
V
CM
Figure 8.
Figure 9.
Offset Voltage
vs.
Supply Voltage
CMRR
vs.
Frequency
120
100
200
150
100
50
V
S
= 2.5V
-40°C
80
60
25°C
V
= 5V
S
0
125°C
-50
40
20
-100
-150
-200
0
10k
100k
10
100
1k
1M
1.5
2.5
3.5
4.5
5.5
6
FREQUENCY (Hz)
V
S
(V)
Figure 10.
Figure 11.
Input Bias Current
Input Bias Current
vs.
vs.
VCM
VCM
1000
500
50
40
30
V
S
= 5V
V
S
= 5V
25°C
0
20
10
125°C
-500
-1000
-1500
-2000
-2500
-3000
-40°C
0
-10
-20
85°C
-30
-40
-50
0
1
2
3
4
0
1
2
3
4
V
(V)
V
CM
(V)
CM
Figure 12.
Figure 13.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
7
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Supply Current
vs.
Supply Voltage
Crosstalk Rejection Ratio
2
160
140
125°C
1.6
120
100
80
60
40
20
0
25°C
1.2
-40°C
0.8
0.4
0
1M
10M
1k
1.5
0
10k
100k
100M
5.5
5
1.5
2.5
3.5
(V)
4.5
5.5
5.5
5
FREQUENCY (Hz)
V
S
Figure 14.
Figure 15.
Sourcing Current
vs.
Supply Voltage
Sinking Current
vs.
Supply Voltage
35
30
25
20
15
80
125°C
70
125°C
60
50
25°C
-40°C
25°C
40
30
10
5
-40°C
20
10
0
0
2.5
3.5
(V)
4.5
1.5
2.5
3.5
(V)
4.5
V
V
S
S
Figure 16.
Figure 17.
Sourcing Current
vs.
Output Voltage
Sinking Current
vs.
Output Voltage
70
30
25
125°C
125°C
60
50
40
30
20
20
15
10
-40°C
25°C
25°C
-40°C
5
0
10
0
0
1
2
3
4
1
2
3
4
V
(V)
OUT
V
(V)
OUT
Figure 18.
Figure 19.
8
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Output Swing High
Output Swing Low
vs.
vs.
Supply Voltage
50
Supply Voltage
50
40
30
R
L
= 10 kW
R =10 kW
L
40
30
25°C
125°C
-40°C
20
10
0
20
10
0
125°C
-40°C
25°C
1.5
1.5
1.5
2.5
3.5
(V)
4.5
5.5
1.5
2.5
3.5
(V)
4.5
5.5
V
V
S
S
Figure 20.
Figure 21.
Output Swing High
vs.
Supply Voltage
Output Swing Low
vs.
Supply Voltage
50
40
30
50
40
30
R
L
= 2 kW
-40°C
125°C
25°C
125°C
25°C
20
10
0
20
10
0
-40°C
R
= 2 kW
L
2.5
3.5
(V)
4.5
5.5
1.5
2.5
3.5
(V)
4.5
5.5
V
V
S
S
Figure 22.
Figure 23.
Output Swing High
vs.
Supply Voltage
Output Swing Low
vs.
Supply Voltage
150
120
90
150
R = 600W
L
R
= 600W
L
120
90
25°C
125°C
125°C
25°C
-40°C
60
30
0
60
30
0
-40°C
2.5
3.5
(V)
4.5
5.5
1.5
2.5
3.5
(V)
4.5
5.5
V
V
S
S
Figure 24.
Figure 25.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
9
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Open Loop Frequency Response
Open Loop Frequency Response
120
120
100
80
120
120
100
80
PHASE
PHASE
100
100
C
L
= 20 pF
80
60
80
60
C
L
= 50 pF
60
60
GAIN
C
L
= 100 pF
40
20
0
40
20
0
40
40
20
0
GAIN
20
0
C
= 20 pF
= 50 pF
L
-20
-40
-20
-40
-60
-20
-40
-20
-40
C
L
C
= 100 pF
L
R
= 600W, 10 kW, 10 MW
L
-60
-60
100M
-60
10k
100k
1M
10M
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 26.
Figure 27.
Phase Margin
vs.
Capacitive Load
Phase Margin
vs.
Capacitive Load
50
40
50
R
= 600W
L
40
30
R
= 600W
L
R
L
= 10 kW
30
20
R
L
= 10 kW
R
= 10 MW
L
20
10
0
R
L
= 10 MW
10
0
V
= 2.5V
V = 5V
S
S
10
100
1000
10
100
1000
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
Figure 28.
Figure 29.
Overshoot and Undershoot
vs.
Slew Rate
vs.
Supply Voltage
Capacitive Load
12
70
UNDERSHOOT%
OVERSHOOT %
FALLING EDGE
60
50
11
10
40
30
20
9
8
7
RISING EDGE
10
0
0
20
40
80
100 120
60
1.5
2.5
3.5
4.5
5.5
6
CAPACITIVE LOAD (pF)
V
(V)
S
Figure 30.
Figure 31.
10
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Small Signal Step Response
Large Signal Step Response
V
= 20 mV
PP
V
= 1 V
IN
IN
PP
f = 1 MHz, A = +1
f = 200 kHz, A = +1
V
V
V
= 2.5V, C = 10 pF
L
V
= 2.5V, C = 10 pF
L
S
S
200 ns/DIV
800 ns/DIV
Figure 32.
Figure 33.
Small Signal Step Response
Large Signal Step Response
V
= 20 mV
PP
IN
V
= 1 V
PP
IN
f = 200 kHz, A = +1
f = 1 MHz, A = +1
V
V
V
= 5V, C = 10 pF
L
V
= 5V, C = 10 pF
S
S
L
200 ns/DIV
800 ns/DIV
Figure 34.
Figure 35.
THD+N
vs.
Output Voltage
THD+N
vs.
Output Voltage
0
0
V
= 1.8V
V
= 5.5V
S
S
f = 1 kHz
f = 1 kHz
-20
-40
-20
-40
A
= +2
A
= +2
V
V
-60
-80
R
L
= 600W
-60
-80
R
= 600W
L
-100
-120
-140
-100
R
L
= 100 kW
R
= 100 kW
L
-120
0.01
0.1
1
10
0.01
0.1
1
10
OUTPUT AMPLITUDE (V
)
PP
OUTPUT AMPLITUDE (V
)
PP
Figure 36.
Figure 37.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
11
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
THD+N
vs.
Frequency
THD+N
vs.
Frequency
0.006
0.006
0.005
0.004
0.003
0.002
0.001
0
V
V
A
= 1.8V
= 0.9 V
= +2
V
V
A
= 5V
= 4 V
= +2
S
O
V
S
O
V
PP
PP
0.005
0.004
0.003
0.002
0.001
0
R
= 600W
L
R
= 600W
L
R
= 100 kW
L
R
= 100 kW
L
10
100
1k
10k
100k
10
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 38.
Figure 39.
PSRR
vs.
Frequency
Input Referred Voltage Noise
vs.
Frequency
100
120
100
V
= 5.5V, -PSRR
V = 5.5V
S
S
V
= 1.8V, -PSRR
S
V
= 2.5V
S
80
60
40
20
V
= 5.5V, +PSRR
S
10
V
= 1.8V, +PSRR
S
1
0
1k
1
10
100
10k
100k
10k
1M
10
100
1k
100k
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 40.
Figure 41.
Time Domain Voltage Noise
Closed Loop Frequency Response
5
4
3
2
225
V
V
= ±2.5V
= 0.0V
V
= 5V
S
S
180
135
90
R
= 2 kW
= 20 pF
CM
L
C
L
V
A
= 2 V
= +1
O
V
PP
1
0
45
0
-45
-90
-135
-1
-2
-3
-4
-5
PHASE
GAIN
-180
-225
1 s/DIV
100 k
10k
FREQUENCY (Hz)
1M
100
1k
10M
Figure 42.
Figure 43.
12
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Unless otherwise noted: TA = 25°C, VS = 5V, VCM = VS/2.
Closed Loop Output Impedance
vs.
Frequency
100
10
1
0.1
0.01
100M
10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz)
Figure 44.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
13
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
APPLICATION INFORMATION
The SM73307 is a dual, low noise, low offset, rail-to-rail output precision amplifier with a wide gain bandwidth
product of 17 MHz and low supply current. The wide bandwidth makes the SM73307 an ideal choice for wide-
band amplification in photovoltaic and portable applications.
The SM73307 is superior for sensor applications. The very low input referred voltage noise of only 5.8 nV/√Hz at
1 kHz and very low input referred current noise of only 10 fA/√Hz mean more signal fidelity and higher signal-to-
noise ratio.
The SM73307 has a supply voltage range of 1.8V to 5.5V over a wide temperature range of 0°C to 125°C. This
is optimal for low voltage commercial applications. For applications where the ambient temperature might be less
than 0°C, the SM73307 is fully operational at supply voltages of 2.0V to 5.5V over the temperature range of
−40°C to 125°C.
The outputs of the SM73307 swing within 25 mV of either rail providing maximum dynamic range in applications
requiring low supply voltage. The input common mode range of the SM73307 extends to 300 mV below ground.
This feature enables users to utilize this device in single supply applications.
The use of a very innovative feedback topology has enhanced the current drive capability of the SM73307,
resulting in sourcing currents of as much as 47 mA with a supply voltage of only 1.8V.
The SM73307 is offered in an 8-pin VSSOP package. This small package is an ideal solution for applications
requiring minimum PC board footprint.
CAPACITIVE LOAD
The unity gain follower is the most sensitive configuration to capacitive loading. The combination of a capacitive
load placed directly on the output of an amplifier along with the output impedance of the amplifier creates a
phase lag which in turn reduces the phase margin of the amplifier. If phase margin is significantly reduced, the
response will be either under-damped or the amplifier will oscillate.
The SM73307 can directly drive capacitive loads of up to 120 pF without oscillating. To drive heavier capacitive
loads, an isolation resistor, RISO as shown in Figure 45, should be used. This resistor and CL form a pole and
hence delay the phase lag or increase the phase margin of the overall system. The larger the value of RISO, the
more stable the output voltage will be. However, larger values of RISO result in reduced output swing and
reduced output current drive.
Figure 45. Isolating Capacitive Load
INPUT CAPACITANCE
CMOS input stages inherently have low input bias current and higher input referred voltage noise. The SM73307
enhances this performance by having the low input bias current of only 50 fA, as well as, a very low input
referred voltage noise of 5.8 nV/ . In order to achieve this a larger input stage has been used. This larger input
stage increases the input capacitance of the SM73307. Figure 46 shows typical input common mode capacitance
of the SM73307.
14
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
25
20
V
S
= 5V
15
10
5
0
0
1
2
3
4
V
CM
(V)
Figure 46. Input Common Mode Capacitance
This input capacitance will interact with other impedances, such as gain and feedback resistors which are seen
on the inputs of the amplifier, to form a pole. This pole will have little or no effect on the output of the amplifier at
low frequencies and under DC conditions, but will play a bigger role as the frequency increases. At higher
frequencies, the presence of this pole will decrease phase margin and also cause gain peaking. In order to
compensate for the input capacitance, care must be taken in choosing feedback resistors. In addition to being
selective in picking values for the feedback resistor, a capacitor can be added to the feedback path to increase
stability.
The DC gain of the circuit shown in Figure 47 is simply −R2/R1.
C
F
R
2
R
1
-
+
C
IN
V
+
-
IN
+
V
OUT
-
R2
R1
VOUT
VIN
-
AV
=
-
=
Figure 47. Compensating for Input Capacitance
For the time being, ignore CF. The AC gain of the circuit in Figure 47 can be calculated as follows:
VOUT
-R2/R1
(s) =
VIN
s2
s
«
«
∆
1 +
+
A0 R1
A0
∆
≈
≈
∆
«
≈
≈
∆
«
R1 + R2
CIN R2
(1)
(2)
This equation is rearranged to find the location of the two poles:
2
«
∆
4 A0CIN
R2
≈
1
1
-1
1
1
-
≈
P1,2
=
+
ê
+
∆
«
R1
R2
R
R2
2CIN
1
As shown in Equation 2, as the values of R1 and R2 are increased, the magnitude of the poles are reduced,
which in turn decreases the bandwidth of the amplifier. Figure 48 shows the frequency response with different
value resistors for R1 and R2. Whenever possible, it is best to choose smaller feedback resistors.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
15
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
15
10
5
A
= -1
V
0
-5
R
1,
R
= 30 kW
2
-10
-15
-20
-25
R
R
= 10 kW
2
1,
R
1,
R
= 1 kW
2
10k
100k
1M
10M
100M
FREQUENCY (Hz)
Figure 48. Closed Loop Frequency Response
As mentioned before, adding a capacitor to the feedback path will decrease the peaking. This is because CF will
form yet another pole in the system and will prevent pairs of poles, or complex conjugates from forming. It is the
presence of pairs of poles that cause the peaking of gain. Figure 49 shows the frequency response of the
schematic presented in Figure 47 with different values of CF. As can be seen, using a small value capacitor
significantly reduces or eliminates the peaking.
20
R , R = 30 kW
1
2
C
F
= 0 pF
A
= -1
V
10
0
C
= 5 pF
F
-10
-20
-30
-40
C
F
= 2 pF
10k
100k
1M
10M
FREQUENCY (Hz)
Figure 49. Closed Loop Frequency Response
TRANSIMPEDANCE AMPLIFIER
In many applications the signal of interest is a very small amount of current that needs to be detected. Current
that is transmitted through a photodiode is a good example. Barcode scanners, light meters, fiber optic receivers,
and industrial sensors are some typical applications utilizing photodiodes for current detection. This current
needs to be amplified before it can be further processed. This amplification is performed using a current-to-
voltage converter configuration or transimpedance amplifier. The signal of interest is fed to the inverting input of
an op amp with a feedback resistor in the current path. The voltage at the output of this amplifier will be equal to
the negative of the input current times the value of the feedback resistor. Figure 50 shows a transimpedance
amplifier configuration. CD represents the photodiode parasitic capacitance and CCM denotes the common-mode
capacitance of the amplifier. The presence of all of these capacitances at higher frequencies might lead to less
stable topologies at higher frequencies. Care must be taken when designing a transimpedance amplifier to
prevent the circuit from oscillating.
With a wide gain bandwidth product, low input bias current and low input voltage and current noise, the SM73307
is ideal for wideband transimpedance applications.
16
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
C
F
R
F
I
IN
C
-
CM
+
-
+
V
OUT
C
D
V
B
CIN = CD + CCM
VOUT
- R
=
F
IIN
Figure 50. Transimpedance Amplifier
A feedback capacitance CF is usually added in parallel with RF to maintain circuit stability and to control the
frequency response. To achieve a maximally flat, 2nd order response, RF and CF should be chosen by using
Equation 3:
CIN
CF =
GBWP * 2 p RF
(3)
Calculating CF from Equation 3 can sometimes result in capacitor values which are less than 2 pF. This is
especially the case for high speed applications. In these instances, it is often more practical to use the circuit
shown in Figure 51 in order to allow more sensible choices for CF. The new feedback capacitor, CF′, is (1+
RB/RA) CF. This relationship holds as long as RA << RF.
R
A
R
B
C
F
R
F
-
+
IF RA < < RF
«
∆
≈
RB
≈
1 +
C Å =
F
CF
∆
RA
«
Figure 51. Modified Transimpedance Amplifier
SENSOR INTERFACE
The SM73307 has a low input bias current and low input referred noise, which makes it an ideal choice for
sensor interfaces such as thermopiles, Infra Red (IR) thermometry, thermocouple amplifiers, and pH electrode
buffers.
Thermopiles generate voltage in response to receiving radiation. These voltages are often only a few microvolts.
As a result, the operational amplifier used for this application needs to have low offset voltage, low input voltage
noise, and low input bias current. Figure 52 shows a thermopile application where the sensor detects radiation
from a distance and generates a voltage that is proportional to the intensity of the radiation. The two resistors, RA
and RB, are selected to provide high gain to amplify this signal, while CF removes the high frequency noise.
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
17
Product Folder Links: SM73307
SM73307
SNOSB88B –JUNE 2011–REVISED APRIL 2013
www.ti.com
THERMOPILE
+
-
+
V
-
+
= KI
IN
R
B
V
OUT
-
IR RADIATION
INTENSITY, I
R
A
C
F
V
R
A
OUT
I =
K(R
R )
B
A +
Figure 52. Thermopile Sensor Interface
PRECISION RECTIFIER
Rectifiers are electrical circuits used for converting AC signals to DC signals. Figure 53 shows a full-wave
precision rectifier. Each operational amplifier used in this circuit has a diode on its output. This means for the
diodes to conduct, the output of the amplifier needs to be positive with respect to ground. If VIN is in its positive
half cycle then only the output of the bottom amplifier will be positive. As a result, the diode on the output of the
bottom amplifier will conduct and the signal will show at the output of the circuit. If VIN is in its negative half cycle
then the output of the top amplifier will be positive, resulting in the diode on the output of the top amplifier
conducting and delivering the signal from the amplifier's output to the circuit's output.
For R2/ R1 ≥ 2, the resistor values can be found by using the equation shown in Figure 53. If R2/ R1 = 1, then R3
should be left open, no resistor needed, and R4 should simply be shorted.
R
2
V
IN
R
1
+
V
V
OUT
-
-
-
V
R
R
3
4
R
R
R
R
2
1
4
3
= 1 +
+
V
-
10 kW
V
Figure 53. Precision Rectifier
18
Submit Documentation Feedback
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: SM73307
SM73307
www.ti.com
SNOSB88B –JUNE 2011–REVISED APRIL 2013
REVISION HISTORY
Changes from Revision A (April 2013) to Revision B
Page
•
Changed layout of National Data Sheet to TI format .......................................................................................................... 18
Copyright © 2011–2013, Texas Instruments Incorporated
Submit Documentation Feedback
19
Product Folder Links: SM73307
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
SM73307MM/NOPB
SM73307MME/NOPB
SM73307MMX/NOPB
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 125
Top-Side Markings
Samples
Drawing
Qty
(1)
(2)
(3)
(4)
ACTIVE
VSSOP
VSSOP
VSSOP
DGK
8
8
8
1000
Green (RoHS
& no Sb/Br)
CU SN
CU SN
CU SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
S307
ACTIVE
ACTIVE
DGK
DGK
250
Green (RoHS
& no Sb/Br)
-40 to 125
S307
S307
3500
Green (RoHS
& no Sb/Br)
-40 to 125
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SM73307MM/NOPB
SM73307MME/NOPB
SM73307MMX/NOPB
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
8
8
8
1000
250
178.0
178.0
330.0
12.4
12.4
12.4
5.3
5.3
5.3
3.4
3.4
3.4
1.4
1.4
1.4
8.0
8.0
8.0
12.0
12.0
12.0
Q1
Q1
Q1
3500
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Oct-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
SM73307MM/NOPB
SM73307MME/NOPB
SM73307MMX/NOPB
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
8
8
8
1000
250
210.0
210.0
367.0
185.0
185.0
367.0
35.0
35.0
35.0
3500
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products
Applications
Audio
www.ti.com/audio
amplifier.ti.com
dataconverter.ti.com
www.dlp.com
Automotive and Transportation www.ti.com/automotive
Communications and Telecom www.ti.com/communications
Amplifiers
Data Converters
DLP® Products
DSP
Computers and Peripherals
Consumer Electronics
Energy and Lighting
Industrial
www.ti.com/computers
www.ti.com/consumer-apps
www.ti.com/energy
dsp.ti.com
Clocks and Timers
Interface
www.ti.com/clocks
interface.ti.com
logic.ti.com
www.ti.com/industrial
www.ti.com/medical
Medical
Logic
Security
www.ti.com/security
Power Mgmt
Microcontrollers
RFID
power.ti.com
Space, Avionics and Defense
Video and Imaging
www.ti.com/space-avionics-defense
www.ti.com/video
microcontroller.ti.com
www.ti-rfid.com
www.ti.com/omap
OMAP Applications Processors
Wireless Connectivity
TI E2E Community
e2e.ti.com
www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2015, Texas Instruments Incorporated
相关型号：
©2020 ICPDF网 联系我们和版权申明