SN65ELT22D [TI]

5-V Dual TTL-to-Differential PECL Translator; 5 -V双TTL至差分PECL转换器
SN65ELT22D
型号: SN65ELT22D
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

5-V Dual TTL-to-Differential PECL Translator
5 -V双TTL至差分PECL转换器

转换器
文件: 总11页 (文件大小:430K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SN65ELT22  
www.ti.com ............................................................................................................................................................................................ SLLS924DECEMBER 2008  
5-V Dual TTL-to-Differential PECL Translator  
1
FEATURES  
PIN ASSIGNMENT  
1.1-ns (max) Propagation Delay  
Operating Range: VCC = 4.2V to 5.7V with  
GND = 0 V  
D or DGK PACKAGE  
(TOP VIEW)  
< 50-ps (typ) Output-to-Output Skew  
Built-In Temperature Compensation  
V
1
2
8
7
Q
Q
CC  
0
Drop-In Compatible to the MC10ELT22,  
MC100ELT22  
D
D
0
1
0
APPLICATIONS  
Data and Clock Transmission Over Backplane  
Signaling Level Conversion for Clock or Data  
6
5
3
4
Q
1
DESCRIPTION  
GND  
Q
1
The SN65ELT22 is a dual TTL-to-differential PECL  
translator. It operates on +5-V supply and ground  
only. The output is undetermined when the inputs are  
left floating. The low output skew makes the device  
an ideal solution for clock or data signal translation.  
Table 1. Pin Descriptions  
PIN  
FUNCTION  
TTL inputs  
The SN65ELT22 is housed in an industry standard  
SOIC-8 package and is also available in an optional  
TSSOP-8 package.  
D0, D1  
Q0, Q0, Q1, Q1  
VCC  
PECL outputs  
Positive supply  
Ground  
GND  
ORDERING INFORMATION(1)  
PART NUMBER  
SN65ELT22D  
PART MARKING  
PACKAGE  
LEAD FINISH  
SN65ELT22  
SN65ELT22  
SOIC  
NiPdAu  
NiPdAu  
SN65ELT22DGK  
SOIC-TSSOP  
(1) Leaded device options are not initially available; contact a sales representative for further details  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2008, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
SN65ELT22  
SLLS924DECEMBER 2008............................................................................................................................................................................................ www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ABSOLUTE MAXIMUM RATINGS(1)  
PARAMETER  
Absolute PECL mode supply voltage, VCC  
Input voltage, VIN  
CONDITIONS  
VALUE  
UNIT  
V
GND = 0 V  
GND = 0 V  
Continuous  
Surge  
6
GND + 0.025 < VIN < VCC – 0.025  
V
50  
Output current  
mA  
100  
Operating temperature range  
Storage temperature range  
–40 to 85  
–65 to 150  
°C  
°C  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions  
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
POWER DISSIPATION RATINGS  
POWER RATING THERMAL RESISTANCE,  
DERATING FACTOR  
TA > 25°C  
POWER RATING  
TA = 85°C  
(mW)  
CIRCUIT BOARD  
MODEL  
JUNCTION-TO-AMBIENT  
PACKAGE  
TA < 25°C  
(mW)  
NO AIRFLOW  
(mW/°C)  
Low-K  
High-K  
Low-K  
High-K  
719  
840  
469  
527  
139  
119  
213  
189  
7
8
5
5
288  
336  
188  
211  
SOIC  
SOIC-TSSOP  
THERMAL CHARACTERISTICS  
PARAMETER  
MIN  
TYP  
79  
MAX UNIT  
SOIC  
θJB  
Junction-to-board thermal resistance  
Junction-to-case thermal resistance  
°C/W  
SOIC-TSSOP  
SOIC  
120  
98  
θJC  
°C/W  
SOIC-TSSOP  
74  
KEY ATTRIBUTES  
CHARACTERISTICS  
VALUE  
Level 1  
Moisture sensitivity level  
Flammability rating (oxygen index: 28 to 34)  
UL 94 V-0 at 0.125 in  
4 kV  
Human body model  
Charge device model  
Machine model  
Electrostatic discharge  
2 kV  
200 V  
Meets or exceeds JEDEC Spec EIA/JESD78 latchup test  
2
Submit Documentation Feedback  
Copyright © 2008, Texas Instruments Incorporated  
Product Folder Link(s): SN65ELT22  
SN65ELT22  
www.ti.com ............................................................................................................................................................................................ SLLS924DECEMBER 2008  
PECL DC CHARACTERISTICS  
At VCC = 5.0 V, GND = 0.0 V (unless otherwise noted)(1)(2)  
TA = –40°C  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
17.3 20 18.2 20 19.4 22 mA  
TA = 25°C  
TA = 85°C  
PARAMETER  
TEST CONDITIONS  
UNIT  
ICC  
Power supply current  
(3)  
VOH  
VOL  
High-level output voltage  
Low-level output voltage  
See  
3915 3954 4120 3915 3958 4120 3915 3961 4120 mV  
3170 3236 3380 3170 3231 3380 3170 3229 3380 mV  
(3)  
See  
(1) The device meets the specifications after thermal balance has been established when mounted in a socket or printed circuit board with  
maintained transverse airflow greater than 500 lfpm. Electrical parameters are assured only over the declared operating temperature  
range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied  
individually under normal operating conditions and not valid simultaneously.  
(2) Input and output parameters vary 1:1 with VCC. VCC can vary +0.7 V /–0.8 V.  
(3) Outputs are terminated through a 50-resistor to VCC – 2.0 V.  
TTL DC CHARACTERISTICS  
At VCC = 4.2 V to 5.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)  
PARAMETER  
TEST CONDITIONS  
VIN = 2.7 V, VIN = (VCC – 0.025) V  
VIN = VCC  
MIN  
TYP  
MAX UNIT  
IIH  
High-level input current  
High-level input current  
Low-level input current  
Input clamp diode voltage  
High-level input voltage  
Low-level input voltage  
20  
20  
µA  
µA  
µA  
V
IIHH  
IIL  
VIN = 0.5 V, VIN = (GND + 0.025) V  
IIN = –18 mA  
–200  
VIK  
VIH  
VIL  
–1.2  
2.0  
Vcc– 0.025  
0.8  
V
GND + 0.025  
V
(1) The device meets the specifications after thermal balance has been established when mounted in a socket or printed circuit board with  
maintained transverse airflow greater than 500 lfpm. Electrical parameters are assured only over the declared operating temperature  
range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied  
individually under normal operating conditions and not valid simultaneously  
AC CHARACTERISTICS  
At VCC = 4.2 V to 5.7 V, GND = 0.0 V (unless otherwise noted)(1)  
TA = –40°C  
MIN TYP  
TA = 25°C  
TA = 85°C  
PARAMETER  
TEST CONDITIONS  
UNIT  
MAX MIN TYP MAX MIN TYP MAX  
Max switching  
fMAX  
frequency(2)  
,
500  
490  
470  
MHz  
see Figure 5  
tPLH  
tPHL  
0.6 0.83  
1.1  
0.9  
90  
0.6 0.84  
1.1  
0.9  
90  
0.6 0.85  
1.1  
0.9  
90  
Propagation delay time 1.5 V to 50%  
ns  
ps  
0.5  
25  
25  
0.5  
25  
25  
0.5  
25  
25  
Within device skew  
See(3)  
tSKEW  
(4)  
Device-to-device skew  
See  
100  
100  
100  
Random clock jitter  
(RMS)  
tJITTER  
tr/tf  
0.5  
1.1  
0.5  
1.1  
0.5  
1.1  
ps  
ns  
Output rise/fall times  
Q (20%–80%)  
0.7  
0.7  
0.7  
(1) The device meets the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are assured only over the declared operating  
temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are  
applied individually under normal operating conditions and not valid simultaneously.  
(2) Maximum switching frequency measured at output amplitude of 300 mVpp  
.
(3) Measured between outputs under the identical transitions and conditions on any one device.  
(4) Device-to-device skew for identical transitions at identical VCC levels.  
Copyright © 2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): SN65ELT22  
SN65ELT22  
SLLS924DECEMBER 2008............................................................................................................................................................................................ www.ti.com  
Typical Termination for Output Driver  
Z
O
= 50 W  
P
P
Driver  
Receiver  
N
N
Z
O
= 50 W  
50 W  
50 W  
V
TT  
= V  
V
- 2 V  
CC  
TT  
Figure 1. Typical Termination for Driver  
1.5 V  
1.5 V  
IN  
OUT  
OUT  
t
t
PHL  
PLH  
Figure 2. Output Propagation Delay  
80%  
20%  
t
t
f
r
Figure 3. Output Rise and Fall Times  
4
Submit Documentation Feedback  
Copyright © 2008, Texas Instruments Incorporated  
Product Folder Link(s): SN65ELT22  
SN65ELT22  
www.ti.com ............................................................................................................................................................................................ SLLS924DECEMBER 2008  
1.5V  
1.5V  
IN  
Q
Q
O
O
t
t
PLH0  
PHL0  
Q1  
Q1  
t
t
PHL1  
PLH1  
Device Skew =  
- t ), (t  
Higher [(t  
- t  
)]  
PLH1 PLH0 PLH1 PLH0  
Figure 4. Device Skew  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
VCC = 4.2 V  
GND = 0 V  
Vswing = 0.8 V–2 V  
TA = 85°C  
TA = 25°C  
TA = –40°C  
0
100  
200  
300  
400  
500  
600  
f – Frequency – MHz  
Figure 5. Output Amplitude vs. Frequency  
Copyright © 2008, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): SN65ELT22  
PACKAGE OPTION ADDENDUM  
www.ti.com  
2-Jan-2009  
PACKAGING INFORMATION  
Orderable Device  
SN65ELT22D  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
SOIC  
D
8
8
8
8
75 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
SN65ELT22DGK  
SN65ELT22DGKR  
SN65ELT22DR  
MSOP  
MSOP  
SOIC  
DGK  
DGK  
D
80 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
31-Dec-2008  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
SN65ELT22DGKR  
SN65ELT22DR  
MSOP  
SOIC  
DGK  
D
8
8
2500  
2500  
330.0  
330.0  
12.4  
12.4  
5.3  
6.4  
3.4  
5.2  
1.4  
2.1  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
31-Dec-2008  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
SN65ELT22DGKR  
SN65ELT22DR  
MSOP  
SOIC  
DGK  
D
8
8
2500  
2500  
346.0  
346.0  
346.0  
346.0  
29.0  
29.0  
Pack Materials-Page 2  
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