SN65LVDS4RSE [TI]
1.8-V HIGH-SPEED DIFFERENTIAL LINE RECEIVER; 1.8 -V高速差分线路接收器
| 型号： | SN65LVDS4RSE |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1.8-V HIGH-SPEED DIFFERENTIAL LINE RECEIVER |
| 文件： | 总20页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SN65LVDS4
www.ti.com
SLLSE15 –JULY 2011
1.8-V HIGH-SPEED DIFFERENTIAL LINE RECEIVER
Check for Samples: SN65LVDS4
1
FEATURES
DESCRIPTION
The SN65LVDS4 is a single, low-voltage, differential
line receiver in a small-outline QFN package.
•
Designed for Signaling Rates up to:
500-Mbps Receiver
–
The signaling rate of a line is the number of voltage transitions that
are made per second expressed in the units bps (bits per second)
SN65LVDS4 (Receiver)
LVDS4 in QFN Package
(BOTTOM VIEW)
SN65LVDS4 (Receiver)
LVDS4 in QFN Package
(TOP VIEW)
•
•
•
•
Operates From a 1.8-V or 2.5-V Core Supply
Available in 1.5-mm × 2-mm QFN Package
Bus-Terminal ESD Exceeds 2 kV (HBM)
VDD
VDD
10
10
9
8
7
6
1
2
3
4
1
2
3
4
9
NC
R
GND
A
GND
A
NC
R
Low-Voltage Differential Signaling With Typical
Output Voltages of 350 mV Into a 100-Ω Load
8
•
•
Propagation Delay Times
–
2.1 ns Typical Receiver
Power Dissipation at 250 MHz
40 mW Typical
7
6
GND
NC
B
B
GND
NC
–
NC
NC
•
•
Requires External Failsafe
Differential Input Voltage Threshold Less Than
50 mV
5
5
VCC
VCC
Table 1. Pin Description Table
•
Can Provide Output Voltage Logic Level (3.3-V
LVTTL, 2.5-V LVCMOS, 1.8-V LVCMOS) Based
on External VDD Pin, Thus Eliminating
External Level Translation
PIN
I/O
DESCRIPTION
NAME
A
NO.
2
3
I
I
LVDS input, positive
B
LVDS input, negative
Ground
APPLICATIONS
GND
NC
1, 7
4, 6, 9
8
–
–
O
–
–
•
•
•
Clock Distribution
Wireless Base Stations
Newtwork Routers
No connect
R
1.8/2.5 LVCMOS/3.3 LVTTL output
Core supply voltage
VCC
VDD
5
10
Output drive voltage
AVAILABLE OPTIONS
PART NUMBER
INTEGRATED TERMINATION
PACKAGE
PACKAGE MARKING
SN65LVDS4RSE
No
QFN
QXB
SPACER
The SN65LVDS4 is characterized for operation from –40°C to 85°C.
Table 2. FUNCTION TABLE
INPUTS
OUTPUT(1)
VID = VA – VB
R
V
ID ≥ 50 mV
H
L
VID ≤ –50 mV
(1) H = high level, L = low level, ? = indeterminate
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
SN65LVDS4
SLLSE15 –JULY 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
RECEIVER EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS
VDD
VDD
VCC
VCC
5 Ω
A
B
R
ESD
ESD
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)(1)
Values
PARAMETER
Units
MIN
–0.5
–0.5
MAX
(2)
Supply voltage range, VCC
4
4
V
V
Receiver output voltage logic level and driver input voltage logic level supply,
VDD
Input voltage range, VI
(A or B)
(R)
–0.5
–0.5
VCC + 0.3
VDD + 0.3
V
V
Output voltage, VO
Differential input voltage magnitude,
1 V
12
|VID
|
Receiver output current, IO
–12
mA
Human-body model electrostatic discharge, HBM ESD(3)
All pins
2000
2000
500
V
V
V
Bus pins (A, B, Y, Z)
Field-induced-charge device model electrostatic discharge, FCDM ESD(4)
Continuous total power dissipation, PD
Storage Temperature Range (non operating)
See the Thermal Information Table
150
–65
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3) Test method based upon JEDEC Standard 22, Test Method A114-A. Bus pins stressed with respect to GND and VCC separately.
(4) Test method based upon EIA-JEDEC JESD22-C101C.
2
Copyright © 2011, Texas Instruments Incorporated
SN65LVDS4
www.ti.com
SLLSE15 –JULY 2011
THERMAL INFORMATION
SN65LVDS4
RSE
THERMAL METRIC(1)
UNIT
10 PINS
171.2
60.7
θJA
Junction-to-ambient thermal resistance(2)
Junction-to-case (top) thermal resistance(3)
Junction-to-board thermal resistance(4)
Junction-to-top characterization parameter(5)
Junction-to-board characterization parameter(6)
Junction-to-case (bottom) thermal resistance(7)
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θJCtop
θJB
71.4
ψJT
0.8
ψJB
64.7
θJCbot
N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
TEST CONDITION
MIN NOM
MAX UNIT
VCC1.8
VCC2.5
VDD1.8
VDD2.5
VDD3.3
TA
Core supply voltage
1.62
2.25
1.62
2.25
3
1.8
2.5
1.8
2.5
3.3
1.98
2.75
1.98
2.75
3.6
V
V
Core supply voltage
Output drive voltage
V
Output drive voltage
V
Output drive voltage
V
Operating free-air temperature
Magnitude of differential input voltage
Operating frequency range
Input voltage (any combination of input or common-mode
–40
0.15
10
85
°C
V
|VID
|
0.6
fop
250 MHz
|VINMAX
|
0
VCC
V
voltage)(1) See VINMAX
.
(1) Any combination of input or common-mode voltage should not be below 0 V or above VCC
.
Copyright © 2011, Texas Instruments Incorporated
3
SN65LVDS4
SLLSE15 –JULY 2011
www.ti.com
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions, VCC = 2.5 V, VID = 150 mV–600 mV, VCM = VID/2 to VCC – VID/2 V, 10 pF load
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN(1)
TYP(2) MAX UNIT
VITH+
VITH–
Positive-going differential input voltage threshold
Negative-going differential input voltage threshold
50
See Figure 1, VCC1.8 , VCC2.5
mV
–50
VDD = 3.3V, IOH = –8 mA
VDD – 0.25
VDD – 0.25
VDD – 0.25
VOH
High-level output voltage
VDD = 2.5V, IOH = –6 mA
V
VDD = 1.8 V, IOH = –4 mA
VDD = 3.3 V, IOL = 8 mA
0.25
0.25
0.25
28
VOL
Low-level output voltage
Static power
VDD = 2.5 V, IOL = 6 mA
V
VDD = 1.8 V, IOL = 4 mA
No load, steady state, VDD = 3.3 V, VID
No load, steady state, VDD = 2.5 V, VID
VI = 0.4 sin(4E6πt) + 0.5 V
VI = 0.4 sin(4E6πt) + 0.5 V
+
22
20
4
Pstatic
mW
+
25
CI
Input capacitance
Output capacitance
pF
pF
CO
4
(1) The algebraic convention, in which the least positive (most negative) limit is designated as a minimum, is used in this data sheet.
(2) All typical values are at 25°C .
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions, VCC = 1.8 V, VID = 150 mV–600 mV, VCM = VID/2 to VCC – VID/2 V, 10 pF load
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN(1)
TYP(2) MAX UNIT
VITH+
VITH–
Positive-going differential input voltage threshold
Negative-going differential input voltage threshold
50
See Figure 1, VCC1.8 , VCC2.5
mV
–50
VDD = 3.3V, IOH = –8 mA
VDD – 0.25
VDD – 0.25
VDD – 0.25
VOH
High-level output voltage
Low-level output voltage
Static power
VDD = 2.5V, IOH = –6 mA
V
V
VDD = 1.8 V, IOH = –4 mA
VDD = 3.3 V, IOL = 8 mA
0.25
0.25
0.25
21
VOL
VDD = 2.5 V, IOL = 6 mA
VDD = 1.8 V, IOL = 4 mA
No load, steady state, VDD = 3.3 V, VID
No load, steady state, VDD = 2.5 V, VID
No load, steady state, VDD = 1.8 V, VID
VI = 0.4 sin(4E6πt) + 0.5 V
VI = 0.4 sin(4E6πt) + 0.5 V
+
+
+
18
16
13
4
Pstatic
19 mW
16
pF
pF
CI
Input capacitance
Output capacitance
CO
4
(1) The algebraic convention, in which the least positive (most negative) limit is designated as a minimum, is used in this data sheet.
(2) All typical values are at 25°C .
4
Copyright © 2011, Texas Instruments Incorporated
SN65LVDS4
www.ti.com
SLLSE15 –JULY 2011
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions, VCC = 2.5 V, VID = 150 mV–600 mV, VCM = VID/2 to VCC – VID/2 V, 10 pF load
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP(1) MAX UNIT
tPLH
tPHL
tsk(p)
Propagation delay time, low-to-high-level output
Propagation delay time, high-to-low-level output
Pulse skew (|tpHL – tpLH|)(2)
2.5
2.5
3.3
3.3
ns
ns
ps
240
550
600
550
600
CL = 10 pF,
See Figure 3
VDD = 3.3 V
tr
tf
Output signal rise time
Output signal fall time
ps
ps
VDD = 2.5 V
VDD = 3.3 V
VDD = 2.5 V
Carrier frequency = 122.8 MHz, input signal
amplitude = 500 mVpp sine wave, integration
bandwidth for rms jitter = 20 khz-20 MHz, VDD
= 2.5 V
tjit
Residual jitter added
370
fs
(1) All typical values are at 25°C.
(2) tsk(p) is the magnitude of the time difference between the high-to-low and low-to-high propagation delay times at an output.
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions, VCC = 1.8 V, VID = 150 mV–600 mV, VCM = VID/2 to VCC – VID/2 V, 10 pF load
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP(1) MAX UNIT
tPLH
tPHL
tsk(p)
Propagation delay time, low-to-high-level output
Propagation delay time, high-to-low-level output
Pulse skew (|tpHL – tpLH|)(2)
3.2
3.2
3.8
3.8
ns
ns
ps
240
550
600
750
550
600
750
VDD = 3.3 V
CL = 10 pF,
See Figure 3
tr
Output signal rise time
Output signal fall time
Residual jitter added
VDD = 2.5 V
VDD = 1.8 V
VDD = 3.3 V
VDD = 2.5 V
VDD = 1.8 V
ps
ps
fs
tf
Carrier frequency = 122.8 MHz, input signal
amplitude = 500 mVpp sine wave, integration
bandwidth for rms jitter = 20 khz-20 MHz, VDD
= 1.8 V
tjit
370
(1) All typical values are at 25°C.
(2) tsk(p) is the magnitude of the time difference between the high-to-low and low-to-high propagation delay times at an output.
Copyright © 2011, Texas Instruments Incorporated
5
SN65LVDS4
SLLSE15 –JULY 2011
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PARAMETER MEASUREMENT INFORMATION
I
IA
A
I
O
V
) V
R
IA
IB
V
ID
2
I
IB
V
IA
B
V
O
V
IC
V
IB
Figure 1. Receiver Voltage and Current Definitions
1000 Ω
†
100 Ω
100 Ω
V
ID
1000 Ω
V
O
10 pF,
+
--
V
IC
2 Places
10 pF
†
Remove for testing LVDT device.
NOTE: Input signal of 3 Mpps, duration of 167 ns, and transition time of <1 ns.
V
IT+
0 V
V
ID
–50 mV
V
O
50 mV
0 V
V
ID
V
IT–
V
O
NOTE: Input signal of 3 Mpps, duration of 167 ns, and transition time of <1 ns.
S0481-01
Figure 2. VIT+ and VIT- Input Voltage Threshold Test Circuit and Definitions
6
Copyright © 2011, Texas Instruments Incorporated
SN65LVDS4
www.ti.com
SLLSE15 –JULY 2011
PARAMETER MEASUREMENT INFORMATION (continued)
VID
VIA
CL
10 pF
VO
VIB
VIA
1.4 V
1 V
VIB
0.4 V
0 V
VID
−0.4 V
tPHL
tPLH
VOH
VO
80%
20%
0.5 VCC
VOL
tf
tf
A. All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 50 Mpps, pulse width = 10 ± 0.2 ns. CL includes instrumentation and fixture capacitance within 0,06 m of the
D.U.T.
Figure 3. Receiver Timing Test Circuit and Waveforms
Copyright © 2011, Texas Instruments Incorporated
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TYPICAL CHARACTERISTICS
VICM = 1.2 V, VID = 300 mV, CL = 10 pF, input rise time and fall time = 1 ns, input frequency = 250 MHz, 50% duty cycle, TA
= 25°C, unless otherwise noted
HIGH-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
LOW-LEVEL OUTPUT CURRENT
3.5
3
1.25
1
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
2.5
2
0.75
0.5
1.5
1
0.25
0
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
0.5
0
−0.25
−0.5
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
High-Level Output Current (mA)
Low-Level Output Current (mA)
G001
G002
Figure 4.
Figure 5.
HIGH- TO LOW-LEVEL
PROPAGATION DELAY TIME
vs
LOW- TO HIGH-LEVEL
PROPAGATION DELAY TIME
vs
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
2.7
2.65
2.6
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
2.55
2.5
2.45
2.4
2.35
2.3
2.25
2.2
2.15
2.1
2.05
2
1.9
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
Free-Air Temperature (°C)
Free-Air Temperature (°C)
G003
G004
Figure 6.
Figure 7.
8
Copyright © 2011, Texas Instruments Incorporated
SN65LVDS4
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SLLSE15 –JULY 2011
TYPICAL CHARACTERISTICS (continued)
VICM = 1.2 V, VID = 300 mV, CL = 10 pF, input rise time and fall time = 1 ns, input frequency = 250 MHz, 50% duty cycle, TA
= 25°C, unless otherwise noted
RISE TIME
vs
FALL TIME
vs
CAPACITIVE LOAD
CAPACITIVE LOAD
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
5
7
9
11
13
15
17
19
21 22
5
7
9
11
13
15
17
19
21 22
Capacitive Load (pF)
Capacitive Load (pF)
G005
G006
Figure 8.
Figure 9.
SUPPLY CURRENT
vs
SUPPLY CURRENT
vs
FREQUENCY
TEMPERATURE
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
ICC, VCC = 1.8 V, VDD = 1.8 V
ICC, VCC = 1.8 V, VDD = 2.5 V
ICC, VCC = 1.8 V, VDD = 3.3 V
ICC, VCC = 2.5 V, VDD = 2.5 V
ICC, VCC = 2.5 V, VDD = 3.3 V
IDD, VCC = 1.8 V, VDD = 1.8 V
IDD, VCC = 1.8 V, VDD = 2.5 V
IDD, VCC = 1.8 V, VDD = 3.3 V
IDD, VCC = 2.5 V, VDD = 2.5 V
IDD, VCC = 2.5 V, VDD = 3.3 V
ICC, VCC = 1.8 V, VDD = 1.8 V
ICC, VCC = 1.8 V, VDD = 2.5 V
ICC, VCC = 1.8 V, VDD = 3.3 V
ICC, VCC = 2.5 V, VDD = 2.5 V
ICC, VCC = 2.5 V, VDD = 3.3 V
IDD, VCC = 1.8 V, VDD = 1.8 V
IDD, VCC = 1.8 V, VDD = 2.5 V
IDD, VCC = 1.8 V, VDD = 3.3 V
IDD, VCC = 2.5 V, VDD = 2.5 V
IDD, VCC = 2.5 V, VDD = 3.3 V
0
0
−40
0
50
100
150
200
250
−20
0
20
40
60
80
Frequency (MHz)
Free-Air Temperature (°C)
G007
G008
Figure 10.
Figure 11.
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TYPICAL CHARACTERISTICS (continued)
VICM = 1.2 V, VID = 300 mV, CL = 10 pF, input rise time and fall time = 1 ns, input frequency = 250 MHz, 50% duty cycle, TA
= 25°C, unless otherwise noted
PULSE SKEW
vs
PULSE SKEW
vs
TEMPERATURE
COMMON-MODE VOLTAGE
160
140
120
100
80
180
160
140
120
100
80
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
60
60
40
40
20
20
0
0
−20
−20
−40
−40
−40
−20
0
20
40
60
80
0.15
0.45
0.75
1.05
1.35
1.65
Free-Air Temperature (°C)
Common-Mode Input Voltage (V)
G009
G010
Figure 12.
Figure 13.
PULSE SKEW
vs
PROPAGATION DELAY, LOW-TO-HIGH
vs
DIFFERENTIAL INPUT VOLTAGE
COMMON-MODE VOLTAGE
160
140
120
100
80
3.1
2.9
2.7
2.5
2.3
2.1
1.9
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
60
40
20
0
−20
−40
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
Differential Input Voltage (V)
0.15
0.45
0.75
1.05
1.35
1.65
Common-Mode Input Voltage (V)
G011
G012
Figure 14.
Figure 15.
10
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TYPICAL CHARACTERISTICS (continued)
VICM = 1.2 V, VID = 300 mV, CL = 10 pF, input rise time and fall time = 1 ns, input frequency = 250 MHz, 50% duty cycle, TA
= 25°C, unless otherwise noted
PROPAGATION DELAY, LOW-TO-HIGH
vs
PROPAGATION DELAY, HIGH-TO-LOW
vs
DIFFERENTIAL INPUT VOLTAGE
COMMON-MODE VOLTAGE
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
3.3
3.1
2.9
2.7
2.5
2.3
2.1
1.9
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
1.9
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
Differential Input Voltage (V)
0.15
0.45
0.75
1.05
1.35
1.65
Common-Mode Input Voltage (V)
G013
G014
Figure 16.
Figure 17.
PROPAGATION DELAY, HIGH-TO-LOW
vs
POWER
vs
DIFFERENTIAL INPUT VOLTAGE
FREQUENCY
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2
90
80
70
60
50
40
30
20
10
0
VCC = 1.8 V, VDD = 1.8 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
VCC = 1.8 V, VDD = 2.5 V
VCC = 1.8 V, VDD = 3.3 V
VCC = 2.5 V, VDD = 2.5 V
VCC = 2.5 V, VDD = 3.3 V
1.9
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6
Differential Input Voltage (V)
0
50
100
150
200
250
Frequency (MHz)
G015
G016
Figure 18.
Figure 19.
Copyright © 2011, Texas Instruments Incorporated
11
SN65LVDS4
SLLSE15 –JULY 2011
www.ti.com
APPLICATION INFORMATION
VINMAX
VCC
VDD
VIA
R
VICM
VIB
|VID| = |VIA –VIB|
VCC2.5 (Note: Worst-Case VCC = 2.5 – 10% = 2.25 V)
VCC2.5 (Note: Worst-Case VCC = 2.5 – 10% = 2.25 V)
VIA (V)
1.25
1.2
VIB (V)
1.2
VID (mV)
VICM (V)
1.225
1.225
2.225
2.225
0.025
0.025
VIA (V)
1.5
VIB (V)
0.9
VID (mV)
600
VICM (V)
50
50
50
50
50
50
1.2
1.2
1.25
2.25
2.2
0.9
1.5
600
2.2
1.65
2.25
0.6
2.25
1.65
0
600
1.95
1.95
0.3
2.25
0.05
0
600
0
600
0.05
0
0.6
600
0.3
VCC1.8 (Note: Worst-Case VCC = 1.8 – 10% =1.62 V)
VCC1.8 (Note: Worst-Case VCC = 1.8 – 10% =1.62 V)
VIA (V)
1.25
1.2
VIB (V)
1.2
VID (mV)
VICM (V)
1.225
1.225
1.595
1.595
0.025
0.025
VIA (V)
1.5
VIB (V)
0.9
VID (mV)
600
VICM (V)
1.2
50
50
50
50
50
50
1.25
1.62
1.57
0
0.9
1.5
600
1.2
1.57
1.62
0.05
0
1.02
1.62
0.6
1.62
1.02
0
600
1.32
1.32
0.3
600
600
0.3
0.05
0
0.6
600
Figure 20. Maximum Input Voltage Combination Allowed
POWER SUPPLY
There are two power supplies in SN65LVDS4, VCC which is the core power supply and VDD which is the output
drive power supply. For proper device operation it is recommended that VCC should be powered up first and
then VDD or VCC applied at the same time as VDD (VCC and VDD tied together). It is also recommended that
VCC should be equal to or less than VDD as shown in Table 3.
Table 3. Power Supply Acceptable Combinations
VCC (V)
1.8
VDD (V)
1.8
Recommended
yes
yes
yes
no
1.8
2.5
1.8
3.3
2.5
1.8
2.5
2.5
yes
yes
2.5
3.3
12
Copyright © 2011, Texas Instruments Incorporated
SN65LVDS4
www.ti.com
SLLSE15 –JULY 2011
FAILSAFE
One of the most common problems with differential signaling applications is how the system responds when no
differential voltage is present on the signal pair. The LVDS receiver is like most differential line receivers, in that
its output logic state can be indeterminate when the differential input voltage is between –50 mV and 50 mV and
within its recommended input common-mode voltage range.
Open circuit means that there is little or no input current to the receiver from the data line itself. This could be
when the driver is in a high-impedance state or the cable is disconnected. When this occurs, it is recommended
to have an external failsafe solution as shown in Figure 21. In the external failsafe solution, the A side is pulled to
VCC via a weak pullup resistor and the B side is pulled down via a weak pulldown resistor. This creates a voltage
offset and prevents the receiver from switching based on noise.
VCC
R1
A
SN65
100 W
R2
R3
LVDS4
B
Figure 21. Open-Circuit Failsafe of the LVDS Receiver
R1 and R3 Calculation With VCC = 1.8 V
Assume that an external failsafe bias of 25 mV is desired
Bias current in this case is = 25 mV/100 Ω = 250 µA
Next, determine the total resistance from VCC to ground = 1.8 V/250 µA = 7.2 kΩ
Keeping the common mode bias of 1.25 V to the receiver, the value of R3 = 1.25 V/250 µA = 5 kΩ
Thus, R1 = 2.2 kΩ
R1 and R3 Calculation With VCC = 2.5 V
Assume that an external failsafe bias of 25 mV is desired
Bias current in this case is = 25 mV/100 Ω = 250 µA
Next, determine the total resistance from VCC to ground = 2.5 V/250 µA = 10 kΩ
Keeping the common mode bias of 1.25 V to the receiver, the value of R3 = 1.25 V/250 µA = 5 kΩ
Thus, R1 = 5 kΩ
Copyright © 2011, Texas Instruments Incorporated
13
SN65LVDS4
SLLSE15 –JULY 2011
www.ti.com
Parallel Terminated
100 Ω
100 Ω
100 Ω
Point to Point
Multidrop
100 Ω
Figure 22. Typical Application Circuits
14
Copyright © 2011, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
1-Aug-2011
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
SN65LVDS4RSER
SN65LVDS4RSET
ACTIVE
ACTIVE
UQFN
UQFN
RSE
RSE
10
10
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-Jul-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
SN65LVDS4RSER
SN65LVDS4RSET
UQFN
UQFN
RSE
RSE
10
10
3000
250
180.0
180.0
8.4
8.4
1.68
1.68
2.13
2.13
0.76
0.76
4.0
4.0
8.0
8.0
Q1
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
29-Jul-2011
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
SN65LVDS4RSER
SN65LVDS4RSET
UQFN
UQFN
RSE
RSE
10
10
3000
250
202.0
202.0
201.0
201.0
28.0
28.0
Pack Materials-Page 2
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