SN74ACT2229DWR [TI]

256 x 1 x 2 dual independent synchronous FIFO memories 28-SOIC -40 to 85;
SN74ACT2229DWR
型号: SN74ACT2229DWR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

256 x 1 x 2 dual independent synchronous FIFO memories 28-SOIC -40 to 85

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SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
DW PACKAGE  
(TOP VIEW)  
Dual Independent FIFOs Organized as:  
64 Words by 1 Bit Each – SN74ACT2227  
256 Words by 1 Bit Each – SN74ACT2229  
1HF  
1AF/AE  
1WRTCLK  
1WRTEN  
1IR  
1OE  
1RDCLK  
1
28  
27  
Free-Running Read and Write Clocks Can  
Be Asynchronous or Coincident on Each  
FIFO  
2
3
26 1RDEN  
25 1OR  
24 1Q  
4
Input-Ready Flags Synchronized to Write  
Clocks  
5
6
23  
22  
21  
20  
19  
18  
17  
16  
15  
1D  
GND  
GND  
2RESET  
Output-Ready Flags Synchronized to Read  
Clocks  
7
V
V
CC  
CC  
8
9
1RESET  
2Q  
2D  
2IR  
2WRTEN  
2WRTCLK  
2AF/AE  
2HF  
Half-Full and Almost-Full/Almost-Empty  
Flags  
10  
11  
12  
13  
14  
2OR  
Support Clock Frequencies up to 60 MHz  
Access Times of 9 ns  
2RDEN  
2RDCLK  
2OE  
3-State Data Outputs  
Low-Power Advanced CMOS Technology  
Packaged in 28-Pin SOIC Package  
description  
The SN74ACT2227 and SN74ACT2229 are dual FIFOs suited for a wide range of serial-data buffering  
applicationsincluding elastic stores for frequencies up to OC-1 telecommunication rates. Each FIFO on the chip  
is arranged as 64 × 1 (SN74ACT2227) or 256 × 1 (SN74ACT2229) and has control signals and status flags for  
independent operation. Output flags for each FIFO include input ready (1IR or 2IR), output ready (1OR or 2OR),  
half full (1HF or 2HF), and almost full/almost empty (1AF/AE or 2AF/AE).  
Serial data is written into a FIFO on the low-to-high transition of the write-clock (1WRTCLK or 2WRTCLK) input  
when the write-enable (1WRTEN or 2WRTEN) input and input-ready flag (1IR or 2IR) output are both high.  
Serial data is read from a FIFO on the low-to-high transition of the read-clock (1RDCLK or 2RDCLK) input when  
the read-enable (1RDEN or 2RDEN) input and output-ready flag (1OR or 2OR) output are both high. The read  
and write clocks of a FIFO can be asynchronous to one another. A FIFO data output (1Q or 2Q) is in the  
high-impedance state when its output-enable (1OE or 2OE) input is low.  
Each input-ready flag (1IR or 2IR) is synchronized by two flip-flop stages to its write clock (1WRTCLK or  
2WRTCLK), and each output-ready flag (1OR or 2OR) is synchronized by three flip-flop stages to its read clock  
(1RDCLK or 2RDCLK). This multistage synchronization ensures reliable flag-output states when data is written  
and read asynchronously.  
A half-full flag (1HF or 2HF) is high when the number of bits stored in its FIFO is greater than or equal to half  
the depth of the FIFO. An almost-full/almost-empty flag (1AF/AE or 2AF/AE) is high when eight or fewer bits  
are stored in its FIFO and when eight or fewer empty locations are left in the FIFO. A bit present on the data  
output is not stored in the FIFO.  
The SN74ACT2227 and SN74ACT2229 are characterized for operation from 40°C to 85°C.  
For more information on this device family, see the application report FIFOs With a Word Width of One Bit  
(literature number SCAA006).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
logic symbols  
Φ
FIFO 64 × 1  
SN74ACT2227  
9
1RESET  
3
RESET  
5
1
IN RDY  
1IR  
1WRTCLK  
WRTCLK  
HALF FULL  
ALMOST FULL/EMPTY  
OUT RDY  
1HF  
4
1WRTEN  
WRTEN  
RDCLK  
2
1AF/AE  
1OR  
27  
25  
1RDCLK  
28  
1OE  
EN1  
26  
1RDEN  
RDEN  
6
24  
1
1D  
1Q  
23  
2RESET  
RESET  
17  
19  
15  
16  
11  
2WRTCLK  
WRTCLK  
WRTEN  
2IR  
IN RDY  
HALF FULL  
18  
2WRTEN  
2HF  
13  
2RDCLK  
RDCLK  
EN2  
2AF/AE  
2OR  
ALMOST FULL/EMPTY  
OUT RDY  
14  
2OE  
12  
2RDEN  
RDEN  
20  
10  
2D  
2Q  
2
Φ
FIFO 256 × 1  
SN74ACT2229  
9
1RESET  
3
RESET  
5
1
IN RDY  
HALF FULL  
1IR  
1WRTCLK  
WRTCLK  
WRTEN  
RDCLK  
1HF  
4
1WRTEN  
2
ALMOST FULL/EMPTY  
OUT RDY  
1AF/AE  
1OR  
27  
25  
1RDCLK  
28  
1OE  
EN1  
26  
1RDEN  
RDEN  
6
24  
1
1D  
1Q  
23  
2RESET  
RESET  
17  
19  
15  
16  
11  
2WRTCLK  
WRTCLK  
WRTEN  
2IR  
IN RDY  
HALF FULL  
18  
2WRTEN  
2HF  
13  
2RDCLK  
RDCLK  
EN2  
2AF/AE  
2OR  
ALMOST FULL/EMPTY  
OUT RDY  
14  
2OE  
12  
2RDEN  
RDEN  
20  
10  
2D  
2
2Q  
These symbols are in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
SN74ACT2227 functional block diagram (each FIFO)  
OE  
D
Location 1  
Location 2  
RDCLK  
RDEN  
Synchronous  
Read Control  
Read  
Pointer  
Dual-Port  
SRAM  
64 × 1  
WRTCLK  
WRTEN  
Synchronous  
Write Control  
Write  
Pointer  
Location 63  
Location 64  
Register  
Q
AF/AE  
HF  
Status  
Reset Logic  
IR  
RESET  
OR  
SN74ACT2229 functional block diagram (each FIFO)  
OE  
D
Location 1  
Location 2  
RDCLK  
RDEN  
Synchronous  
Read Control  
Read  
Pointer  
Dual-Port  
SRAM  
256 × 1  
WRTCLK  
WRTEN  
Synchronous  
Write Control  
Write  
Pointer  
Location 255  
Location 256  
Register  
Q
AF/AE  
HF  
Status  
Reset Logic  
IR  
RESET  
OR  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
Terminal Functions  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
1AF/AE  
2AF/AE  
2
16  
Almost-full/almost-empty flag. AF/AE is high when the memory is eight locations or fewer from a full or empty  
state. AF/AE is set high after reset.  
O
I
1D  
2D  
6
20  
Data input  
Ground  
GND  
7, 8  
1HF  
2HF  
1
15  
Half-fullflag. HFishighwhenthenumberofbitsstoredinmemoryisgreaterthanorequaltohalftheFIFOdepth.  
HF is set low after reset.  
O
O
I
Input-ready flag. IR is synchronized to the low-to-high transition of WRTCLK. When IR is low, the FIFO is full  
and writes are disabled. IR is set low during reset and is set high on the second low-to-high transition of  
WRTCLK after reset.  
1IR  
2IR  
5
19  
1OE  
2OE  
28  
14  
Output enable. The data output of a FIFO is active when OE is high and in the high-impedance state when OE  
is low.  
Output-ready flag. OR is synchronized to the low-to-high transition of RDCLK. When OR is low, the FIFO is  
empty and reads are disabled. Ready data is present on the data output when OR is high. OR is set low during  
reset and set high on the third low-to-high transition of RDCLK after the first word is loaded to empty memory.  
1OR  
2OR  
25  
11  
O
O
I
1Q  
2Q  
24  
10  
Data outputs. After the first valid write to empty memory, the first bit is output on the third rising edge of RDCLK.  
OR for the FIFO is asserted high to indicate ready data.  
Read clock. RDCLK is a continuous clock and can be independent of any other clock on the device. A  
low-to-high transition of RDCLK reads data from memory when the FIFO RDEN and OR are high. OR is  
synchronous with the low-to-high transition of RDCLK.  
1RDCLK  
2RDCLK  
27  
13  
1RDEN  
2RDEN  
26  
12  
Read enable. When the RDEN and OR of a FIFO are high, data is read from the FIFO on the low-to-high  
transition of RDCLK.  
I
Reset. To reset the FIFO, four low-to-high transitions of RDCLK and four low-to-high transitions of WRTCLK  
must occur while RESET is low. This sets HF, IR, and OR low and AF/AE high. Before it is used, a FIFO must  
be reset after power up.  
1RESET  
2RESET  
9
23  
I
V
CC  
21, 22  
Supply voltage  
Write clock. WRTCLK is a continuous clock and can be independent of any other clock on the device. A  
low-to-hightransition of WRTCLK writes data to memory when WRTEN and IR are high. IR is synchronous with  
the low-to-high transition of WRTCLK.  
1WRTCLK  
2WRTCLK  
3
17  
I
I
1WRTEN  
2WRTEN  
4
18  
Writeenable. When WRTEN and IR are high, data is written to the FIFO on a low-to-high transition of WRTCLK.  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
RESET  
WRTCLK  
WRTEN  
D
1
2
3
4
1
2
Don’t Care  
Don’t Care  
RDCLK  
RDEN  
OE  
1
2
3
4
Don’t Care  
Don’t Care  
Q
OR  
Don’t Care  
AF/AE  
HF  
Don’t Care  
Don’t Care  
IR  
Don’t Care  
Figure 1. FIFO Reset  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
1
0
RESET  
WRTCLK  
1
0
WRTEN  
D
B1  
B2  
1
B3  
2
B4  
3
B10  
A
B
C
RDCLK  
RDEN  
1
0
1
0
OE  
Q
B1  
OR  
AF/AE  
HF  
IR  
DATA BIT NUMBER BASED ON FIFO DEPTH  
DATA BIT  
DEVICE  
A
B
C
SN74ACT2227  
SN74ACT2229  
B33  
B57  
B65  
B129 B249 B257  
Figure 2. FIFO Write  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
1
0
RESET  
WRTCLK  
1
2
WRTEN  
D
F
RDCLK  
RDEN  
OE  
1
0
B1  
B2  
B3  
B9  
B10  
A
B
C
D
E
F
Q
OR  
AF/AE  
HF  
IR  
DATA BIT NUMBER BASED ON FIFO DEPTH  
DATA BIT  
DEVICE  
A
B
C
D
E
F
SN74ACT2227  
SN74ACT2229  
B33  
B34  
B56  
B57  
B64  
B65  
B129 B130 B248 B249 B256 B257  
Figure 3. FIFO Read  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 7 V  
CC  
Input voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to V  
+ 0.5 V  
+ 0.5 V  
I
CC  
CC  
Output voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to V  
O
Voltage applied to a disabled 3-state output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V  
Input clamp current, I (V < 0 or V > V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA  
IK  
OK  
I
I
CC  
Output clamp current, I  
(V < 0 or V > V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA  
O O CC  
Continuous output current, I (V = 0 to V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA  
Continuous current through V  
Package thermal impedance, θ (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78°C/W  
Storage temperature range, T  
O
O
CC  
or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±200 mA  
CC  
JA  
stg  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. The input and output voltage ratings may be exceeded provided that the input and output current ratings are observed.  
2. The package thermal impedance is calculated in accordance with JESD 51.  
recommended operating conditions  
MIN  
4.5  
2
MAX  
UNIT  
V
V
V
V
Supply voltage  
5.5  
CC  
High-level input voltage  
Low-level input voltage  
High-level output current  
V
IH  
0.8  
–8  
16  
8
V
IL  
I
Q outputs, flags  
Q outputs  
Flags  
mA  
OH  
I
Low-level output current  
mA  
OL  
T
A
Operating free-air temperature  
40  
85  
°C  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
PARAMETER  
TEST CONDITIONS  
= – 8 mA  
MIN TYP  
MAX  
UNIT  
V
V
V
V
V
V
V
= 4.5 V,  
= 4.5 V,  
= 4.5 V,  
= 5.5 V,  
= 5.5 V,  
I
I
I
2.4  
V
OH  
CC  
CC  
CC  
CC  
CC  
OH  
OL  
OL  
Flags  
= 8 mA  
0.5  
0.5  
±5  
±5  
400  
1
V
OL  
Q outputs  
= 16 mA  
I
I
I
V = V  
or 0  
µA  
µA  
µA  
mA  
pF  
pF  
I
I
CC  
= V or 0  
CC  
V
OZ  
CC  
O
V = V  
I
– 0.2 V or 0  
CC  
= 5.5 V,  
§
I  
CC  
V
One input at 3.4 V,  
f = 1 MHz  
Other inputs at V or GND  
CC  
CC  
V = 0,  
C
C
4
8
i
I
V
O
= 0,  
f = 1 MHz  
o
§
All typical values are at V  
= 5 V, T = 25°C.  
A
CC  
This is the supply current when each input is at one of the specified TTL voltage levels rather than 0 V or V  
.
CC  
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
timing requirements over recommended ranges of supply voltage and operating free-air  
temperature (unless otherwise noted) (see Figures 1 through 4)  
MIN  
MAX  
UNIT  
f
t
Clock frequency  
Pulse duration  
60  
MHz  
clock  
1WRTCLK, 2WRTCLK high or low  
5
5
ns  
ns  
w
1RDCLK, 2RDCLK high or low  
1D before 1WRTCLKand 2D before 2WRTCLK↑  
1WRTEN before 1WRTCLKand 2WRTEN before 2WRTCLK↑  
1RDEN before 1RDCLKand 2RDEN before 2RDCLK↑  
1RESET low before 1WRTCLKand 2RESET low before 2WRTCLK↑  
4.5  
4.5  
4
t
su  
Setup time  
Hold time  
6
1RESET low before 1RDCLKand 2RESET low before 2RDCLK↑  
1D after 1WRTCLKand 2D after 2WRTCLK↑  
6
0
1WRTEN after 1WRTCLKand 2WRTEN after 2WRTCLK↑  
1RDEN after 1RDCLKand 2RDEN after 2RDCLK↑  
0
t
h
0
ns  
1RESET low after 1WRTCLKand 2RESET low after 2WRTCLK↑  
6
1RESET low after 1RDCLKand 2RESET low after 2RDCLK↑  
Requirement to count the clock edge as one of at least four needed to reset a FIFO  
6
switching characteristics over recommended ranges of supply voltage and operating free-air  
temperature, C = 50 pF (unless otherwise noted) (see Figure 4)  
L
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
MIN  
MAX  
UNIT  
1WRTCLK, 2WRTCLK,  
or 1RDCLK, 2RDCLK  
f
60  
MHz  
max  
t
t
t
1RDCLK, 2RDCLK↑  
1WRTCLK, 2WRTCLK↑  
1RDCLK, 2RDCLK↑  
1WRTCLK, 2WRTCLK↑  
1RDCLK, 2RDCLK↑  
1WRTCLK, 2WRTCLK↑  
1RDCLK, 2RDCLK↑  
1Q, 2Q  
1IR, 2IR  
2
1
1
3
3
2
3
1
1
0
0
9
8
ns  
ns  
ns  
pd  
pd  
pd  
1OR, 2OR  
8
14  
14  
12  
14  
17  
18  
8
t
pd  
1AF/AE, 2AF/AE  
1HF, 2HF  
ns  
t
t
t
t
t
t
ns  
ns  
ns  
ns  
ns  
ns  
PLH  
PHL  
PLH  
PHL  
en  
1AF/AE, 2AF/AE  
1HF, 2HF  
1Q, 2Q  
1RESET, 2RESET low  
1OE, 2OE  
1OE, 2OE  
1Q, 2Q  
8
dis  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
PARAMETER MEASUREMENT INFORMATION  
7 V  
PARAMETER  
S1  
S1  
t
Open  
Closed  
Open  
Closed  
Open  
Open  
PZH  
t
t
t
en  
dis  
pd  
t
500 Ω  
PZL  
t
PHZ  
From Output  
Under Test  
Test  
Point  
t
PLZ  
PLH  
PHL  
t
t
C
= 50 pF  
500 Ω  
L
(see Note A)  
LOAD CIRCUIT  
t
w
3 V  
0 V  
Input  
1.5 V  
1.5 V  
3 V  
0 V  
Timing  
Input  
1.5 V  
VOLTAGE WAVEFORMS  
PULSE DURATION  
t
su  
t
h
3 V  
0 V  
Data  
Input  
3 V  
0 V  
1.5 V  
1.5 V  
Output  
Control  
1.5 V  
1.5 V  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
t
PZL  
t
PLZ  
3.5 V  
Output  
Waveform 1  
S1 at 7 V  
3 V  
0 V  
1.5 V  
Input  
1.5 V  
1.5 V  
V
+ 0.3 V  
– 0.3 V  
OL  
V
OL  
OH  
t
PHZ  
t
PLH  
t
PZH  
t
PHL  
V
Output  
Waveform 2  
S1 at Open  
V
OH  
V
OH  
1.5 V  
Output  
1.5 V  
1.5 V  
0 V  
V
OL  
VOLTAGE WAVEFORMS  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
ENABLE AND DISABLE TIMES  
NOTE A: C includes probe and jig capacitance.  
L
Figure 4. Load Circuit and Voltage Waveforms  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
TYPICAL CHARACTERISTICS  
SINGLE FIFO SUPPLY CURRENT  
vs  
CLOCK FREQUENCY  
40  
35  
30  
25  
20  
15  
10  
5
V
CC  
= 5.5 V  
V
CC  
= 5 V  
V
CC  
= 4.5 V  
f = 1/2 f  
I
clock  
= 75°C  
= 0 pF  
T
A
C
L
0
0
10  
20  
30  
40  
50  
60  
f
– Clock Frequency – MHz  
clock  
Figure 5  
calculating power dissipation  
Data for Figure 5 is taken with one FIFO active and one FIFO idle on the device. The active FIFO has both writes  
and reads enabled with its read clock (RDCLK) and write clock (WRTCLK) operating at the rate specified by  
f
. The data input rate and data output rate are half the f  
rate, and the data output is disconnected. A  
clock  
clock  
close approximation to the total device power can be found by Figure 5, determining the capacitive load on the  
data output and determining the number of SN74ACT2227/2229 inputs driven by TTL high levels.  
With I  
taken from Figure 5, the maximum power dissipation (P ) of one FIFO on the SN74ACT2227 or  
T
CC(f)  
SN74ACT2229 can be calculated by:  
2
P = V  
× [I  
+ (N × I  
× dc)] + (C × V  
× f )  
T
CC  
CC(f)  
CC  
L
CC o  
where:  
N
I  
dc  
=
=
=
=
=
number of inputs driven by TTL levels  
increase in power-supply current for each input at a TTL high level  
duty cycle of inputs at a TTL high level of 3.4 V  
output capacitive load  
CC  
C
L
f
switching frequency of an output  
o
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74ACT2227, SN74ACT2229  
DUAL 64 × 1, DUAL 256 × 1  
FIRST-IN, FIRST-OUT MEMORIES  
SCAS220C – JUNE 1992 – REVISED OCTOBER 1997  
APPLICATION INFORMATION  
An example of concentrating two independent serial-data signals into a single composite data signal with the use of  
anSN74ACT2227orSN74ACT2229deviceisshowninFigure6. TheinputdatatotheFIFOssharethesameaverage  
(mean) frequency and the mean frequency of the SYS_CLOCK is greater than or equal to the sum of the individual  
mean input rates. A single-bit FIFO is needed for each additional input data signal that is time-division multiplexed  
into the composite signal.  
The FIFO memories provide a buffer to absorb clock jitter generated by the transmission systems of incoming signals  
and synchronize the phase-independent inputs to one another. FIFO half-full (HF) flags are used to signal the  
multiplexer to start fetching data from the buffers. The state of the flags also can be used to indicate when a FIFO  
read should be suppressed to regulate the output flow (pulse-stuffing control). The FIFO almost-full/almost-empty  
(AF/AE) flags can be used in place of the half-full flags to reduce transmission delay.  
SN74ACT2227  
or  
SN74ACT2229  
SYS_CLOCK  
+5 V  
1HF  
1WRTCLK 1RDCLK  
READY_1  
Serial  
Data  
Stream  
1WRTEN  
1D  
1RDEN  
1Q  
SELECT_1  
DATA_1  
Composite  
Data Stream  
Time-Division  
Multiplexer  
Serial  
Data  
Stream  
2WRTCLK 2RDCLK  
2WRTEN  
2D  
2RDEN  
2Q  
SELECT_2  
DATA_2  
2HF  
READY_2  
Figure 6. Time-Division Multiplexing Using the SN74ACT2227 or SN74ACT2229  
12  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1999, Texas Instruments Incorporated  

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