SN74AHCT1G04DCK [TI]

SINGLE INVERTER GATE; 单非门
SN74AHCT1G04DCK
型号: SN74AHCT1G04DCK
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

SINGLE INVERTER GATE
单非门

栅极 触发器 逻辑集成电路 光电二极管
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SN74AHCT1G04  
SINGLE INVERTER GATE  
SCLS319J – MARCH 1996 – REVISED JANUARY 2000  
DBV OR DCK PACKAGE  
(TOP VIEW)  
EPIC (Enhanced-Performance Implanted  
CMOS) Process  
Inputs Are TTL-Voltage Compatible  
NC  
A
GND  
V
Y
1
2
3
5
4
CC  
Latch-Up Performance Exceeds 250 mA Per  
JESD 17  
Package Options Include Plastic  
Small-Outline Transistor (DBV, DCK)  
Packages  
NC – No internal connection  
description  
The SN74AHCT1G04 contains one gate. The device performs the Boolean function Y = A.  
The SN74AHCT1G04 is characterized for operation from –40°C to 85°C.  
FUNCTION TABLE  
INPUT  
A
OUTPUT  
Y
H
L
L
H
logic symbol  
4
2
Y
A
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.  
logic diagram (positive logic)  
2
4
A
Y
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74AHCT1G04  
SINGLE INVERTER GATE  
SCLS319J – MARCH 1996 – REVISED JANUARY 2000  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
CC  
Input voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V  
I
Output voltage range, V (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to V  
+ 0.5 V  
O
CC  
Input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20 mA  
IK  
I
Output clamp current, I  
(V < 0 or V > V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 mA  
OK  
O O CC  
Continuous output current, I (V = 0 to V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25 mA  
Continuous current through V  
Package thermal impedance, θ (see Note 2): DBV package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 347°C/W  
O
O
CC  
CC  
or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±50 mA  
JA  
DCK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 389°C/W  
Storage temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
2. The package thermal impedance is calculated in accordance with JESD 51.  
recommended operating conditions  
MIN  
MAX  
UNIT  
V
V
V
V
V
V
Supply voltage  
4.5  
2
5.5  
CC  
IH  
IL  
High-level input voltage  
Low-level input voltage  
Input voltage  
V
0.8  
5.5  
V
0
0
V
I
Output voltage  
V
V
O
CC  
–8  
I
I
High-level output current  
Low-level output current  
Input transition rise or fall rate  
Operating free-air temperature  
mA  
mA  
ns/V  
°C  
OH  
OL  
8
20  
85  
t/v  
T
A
–40  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
T
A
= 25°C  
TYP  
4.5  
PARAMETER  
TEST CONDITIONS  
V
MIN  
MAX  
UNIT  
V
CC  
MIN  
4.4  
MAX  
I
I
I
I
= –50 µA  
= –8 mA  
= 50 µA  
= 8 mA  
4.4  
3.8  
OH  
OH  
OL  
OL  
V
4.5 V  
4.5 V  
OH  
OL  
3.94  
0.1  
0.36  
±0.1  
1
0.1  
0.44  
±1  
V
V
I
I
V = V  
or GND  
0 V to 5.5 V  
5.5 V  
µA  
µA  
mA  
pF  
I
I
CC  
V = V  
or GND,  
I = 0  
O
10  
CC  
I
CC  
I  
CC  
One input at 3.4 V, Other inputs at V  
or GND  
5.5 V  
1.35  
10  
1.5  
10  
CC  
C
V = V  
CC  
or GND  
5 V  
4
i
I
This is the increase in supply current for each input at one of the specified TTL voltage levels rather than 0 V or V  
.
CC  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74AHCT1G04  
SINGLE INVERTER GATE  
SCLS319J – MARCH 1996 – REVISED JANUARY 2000  
switching characteristics over recommended operating free-air temperature range,  
= 5 V ± 0.5 V (unless otherwise noted) (see Figure 1)  
V
CC  
T
A
= 25°C  
TYP  
4.7  
FROM  
(INPUT)  
TO  
(OUTPUT)  
LOAD  
CAPACITANCE  
PARAMETER  
MIN  
MAX  
UNIT  
ns  
MIN  
MAX  
6.7  
t
t
t
t
1
1
1
1
7.5  
7.5  
8.5  
8.5  
PLH  
PHL  
PLH  
PHL  
A
A
Y
Y
C
C
= 15 pF  
= 50 pF  
L
L
4.7  
6.7  
5.5  
7.7  
ns  
5.5  
7.7  
operating characteristics, V  
= 5 V, T = 25°C  
A
CC  
PARAMETER  
Power dissipation capacitance  
TEST CONDITIONS  
No load, f = 1 MHz  
TYP  
UNIT  
C
14  
pF  
pd  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
SN74AHCT1G04  
SINGLE INVERTER GATE  
SCLS319J – MARCH 1996 – REVISED JANUARY 2000  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
Open  
GND  
S1  
R
= 1 kΩ  
L
TEST  
S1  
From Output  
Under Test  
Test  
Point  
From Output  
Under Test  
t
t
/t  
Open  
PLH PHL  
/t  
C
C
L
t
V
CC  
L
PLZ PZL  
/t  
(see Note A)  
(see Note A)  
GND  
PHZ PZH  
Open Drain  
V
CC  
LOAD CIRCUIT FOR  
LOAD CIRCUIT FOR  
TOTEM-POLE OUTPUTS  
3-STATE AND OPEN-DRAIN OUTPUTS  
3 V  
1.5 V  
Timing Input  
0 V  
t
w
t
h
3 V  
t
su  
3 V  
0 V  
1.5 V  
1.5 V  
Input  
Input  
1.5 V  
1.5 V  
Data Input  
0 V  
VOLTAGE WAVEFORMS  
PULSE DURATION  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
3 V  
0 V  
3 V  
0 V  
Output  
Control  
1.5 V  
1.5 V  
1.5 V  
1.5 V  
t
t
t
t
t
PZL  
PLZ  
PLH  
PHL  
Output  
Waveform 1  
V
V  
OH  
CC  
In-Phase  
Output  
50% V  
50% V  
50% V  
CC  
50% V  
CC  
CC  
V
S1 at V  
(see Note B)  
CC  
V
V
+ 0.3 V  
OL  
V
OL  
OL  
t
t
t
PHL  
PLH  
PZH  
PHZ  
Output  
Waveform 2  
S1 at GND  
V
OH  
V
OH  
Out-of-Phase  
Output  
– 0.3 V  
OH  
50% V  
50% V  
CC  
CC  
CC  
V
0 V  
(see Note B)  
OL  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
INVERTING AND NONINVERTING OUTPUTS  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
LOW- AND HIGH-LEVEL ENABLING  
NOTES: A. includes probe and jig capacitance.  
C
L
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR 1 MHz, Z = 50 , t 3 ns, t 3 ns.  
O
r
f
D. The outputs are measured one at a time with one input transition per measurement.  
Figure 1. Load Circuit and Voltage Waveforms  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 2000, Texas Instruments Incorporated  

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