SN74AUC2G66DCTR [TI]

DUAL BILATERAL ANALOG SWITCH; 双边双模拟开关
SN74AUC2G66DCTR
型号: SN74AUC2G66DCTR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

DUAL BILATERAL ANALOG SWITCH
双边双模拟开关

复用器 开关 复用器或开关 信号电路 光电二极管 输出元件
文件: 总16页 (文件大小:322K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ꢀꢁꢂ ꢃ ꢄ ꢅꢆ ꢇꢈ ꢉ ꢉ  
ꢊꢅꢄ ꢋ ꢌꢍ ꢋꢄꢎ ꢏꢐꢄꢋ ꢄꢁꢄ ꢋꢑ ꢈ ꢀ ꢒꢍ ꢎꢆ ꢓ  
SCES507 − NOVEMBER 2003  
DCT OR DCU PACKAGE  
(TOP VIEW)  
D
Available in the Texas Instruments  
NanoStarand NanoFreePackages  
D
D
D
D
D
D
D
Operates at 0.8 V to 2.7 V  
Sub 1-V Operable  
1A  
1B  
2C  
V
CC  
1
2
3
4
8
7
6
5
1C  
2B  
2A  
Max t of 0.5 ns at 1.8 V  
pd  
GND  
Low Power Consumption, 10 µA at 2.7 V  
High On-Off Output Voltage Ratio  
High Degree of Linearity  
YEP OR YZP PACKAGE  
(BOTTOM VIEW)  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
4 5  
3 6  
2 7  
1 8  
GND  
2C  
1B  
2A  
2B  
1C  
D
ESD Performance Tested Per JESD 22  
− 2000-V Human-Body Model  
(A114-B, Class II)  
− 200-V Machine Model (A115-A)  
− 1000-V Charged-Device Model (C101)  
1A  
V
CC  
description/ordering information  
This dual analog switch is operational at 0.8-V to 2.7-V V , but is designed specifically for 1.1-V to 2.7-V V  
CC  
operation.  
CC  
The SN74AUC2G66 can handle both analog and digital signals. It permits signals with amplitudes of up to 2.7-V  
(peak) to be transmitted in either direction.  
NanoStarand NanoFreepackage technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
Applications include signal gating, chopping, modulation or demodulation (modem), and signal multiplexing for  
analog-to-digital and digital-to-analog conversion systems.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
T
A
PACKAGE  
NanoStar− WCSP (DSBGA)  
0.23-mm Large Bump − YEP  
Tape and reel SN74AUC2G66YEPR  
Tape and reel SN74AUC2G66YZPR  
_ _ _U6_  
NanoFree− WCSP (DSBGA)  
0.23-mm Large Bump − YZP (Pb-free)  
−40°C to 85°C  
SSOP − DCT  
Tape and reel  
Tape and reel  
SN74AUC2G66DCTR  
SN74AUC2G66DCUR  
U66_ _ _  
U66_  
VSSOP − DCU  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
DCT: The actual top-side marking has three additional characters that designate the year, month, and assembly/test site.  
DCU: The actual top-side marking has one additional character that designates the assembly/test site.  
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one  
following character to designate the assembly/test site. Pin  
1 identifier indicates solder-bump composition  
(1 = SnPb, = Pb-free).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar and NanoFree are trademarks of Texas Instruments.  
ꢎꢠ  
Copyright 2003, Texas Instruments Incorporated  
ꢜ ꢠ ꢝ ꢜꢕ ꢖꢪ ꢘꢗ ꢛ ꢣꢣ ꢡꢛ ꢙ ꢛ ꢚ ꢠ ꢜ ꢠ ꢙ ꢝ ꢥ  
1
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SCES507 − NOVEMBER 2003  
FUNCTION TABLE  
CONTROL  
INPUT  
(C)  
SWITCH  
L
OFF  
ON  
H
logic diagram (positive logic)  
1
2
B
A
C
4
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage range, V  
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.6 V  
CC  
Input voltage range, V (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 3.6 V  
I
Switch I/O voltage range, V (see Notes 1 and 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to V  
+ 0.5 V  
I/O  
CC  
Control input clamp current, I (V < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50 mA  
IK  
I
I/O port diode current, I  
(V < 0 or V > V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
IOK I/O  
I/O CC  
On-state switch current, I (V = 0 to V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Continuous current through V  
T
I/O  
CC  
CC  
or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
Package thermal impedance, θ (see Note 3): DCT package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C/W  
JA  
DCU package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 227°C/W  
YEP/YZP package . . . . . . . . . . . . . . . . . . . . . . . . . . . 102°C/W  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C  
Storage temperature range, T  
stg  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. All voltages are with respect to ground unless otherwise specified.  
2. The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.  
3. The package thermal impedance is calculated in accordance with JESD 51-7.  
2
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SCES507 − NOVEMBER 2003  
recommended operating conditions (see Note 4)  
MIN  
MAX  
UNIT  
V
Supply voltage  
0.8  
2.7  
V
CC  
IH  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 0.8 V  
V
CC  
= 1.1 V to 1.95 V  
= 2.3 V to 2.7 V  
= 0.8 V  
0.65 × V  
V
High-level input voltage  
V
V
CC  
1.7  
0
0.35 × V  
0.7  
= 1.1 V to 1.95 V  
= 2.3 V to 2.7 V  
V
Low-level input voltage  
CC  
IL  
V
V
I/O port voltage  
0
0
V
CC  
3.6  
V
V
I/O  
Control input voltage  
I
V
CC  
V
CC  
V
CC  
= 0.8 V to 1.65 V  
20  
20  
20  
85  
= 1.65 V to 2.3 V  
t/v  
Input transition rise or fall rate  
Operating free-air temperature  
ns/V  
= 2.3 V to 2.7 V  
T
A
−40  
°C  
The data was taken at C = 15 pF, R = 2 k(see Figure 1).  
L
L
The data was taken at C = 30 pF, R = 500 (see Figure 1).  
L
L
NOTE 4: All unused inputs of the device must be held at V  
or GND to ensure proper device operation. Refer to the TI application report,  
CC  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
electrical characteristics over recommended operating free-air temperature range (unless  
otherwise noted)  
§
PARAMETER  
TEST CONDITIONS  
V
MIN TYP  
MAX  
40  
20  
15  
180  
80  
20  
3
UNIT  
CC  
1.1 V  
1.65 V  
2.3 V  
1.1 V  
1.65 V  
2.3 V  
1.1 V  
1.65 V  
2.3 V  
17  
7
V = V  
or GND,  
I
CC  
IH  
I
I
= 4 mA  
= 8 mA  
S
V
= V  
r
r
On-state switch resistance  
C
on  
(see Figures 1 and 2)  
4
S
131  
32  
15  
V = V  
to GND,  
I
CC  
IH  
I
I
= 4 mA  
= 8 mA  
S
V
C
= V  
Peak on resistance  
on(p)  
(see Figures 1 and 2)  
S
V = V  
to GND,  
I
CC  
IH  
I
I
= 4 mA  
= 8 mA  
Difference of on-state resistance  
between switches  
S
1
V
C
= V  
r  
on  
(see Figures 1 and 2)  
1
S
V = V  
CC  
and V = GND, or  
O
1
I
V = GND and V = V  
,
I
Off-state switch leakage current  
2.7 V  
µA  
I
V
O
CC  
S(off)  
0.1  
= V (see Figure 3)  
C
IL  
1
V = V  
CC  
or GND, V = V , V = Open  
IH  
I
C
O
I
I
I
On-state switch leakage current  
Control input current  
Supply current  
2.7 V  
µA  
µA  
µA  
S(on)  
(see Figure 4)  
0.1  
V = V  
or GND  
or GND,  
0 to 2.7 V  
5
I
I
CC  
CC  
0.8 V to  
2.7 V  
V = V  
I = 0  
O
10  
CC  
I
C
C
C
Control input capacitance  
2.5 V  
2.5 V  
2.5 V  
2.5  
3
pF  
pF  
pF  
ic  
Switch input/output capacitance  
Switch input/output capacitance  
io(off)  
io(on)  
7
§
T
A
= 25°C  
3
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SCES507 − NOVEMBER 2003  
switching characteristics over recommended operating free-air temperature range, C = 15 pF  
L
(unless otherwise noted) (see Figure 5)  
V
= 1.2 V  
0.1 V  
V
= 1.5 V  
0.1 V  
V
= 1.8 V  
V
= 2.5 V  
0.2 V  
CC  
CC  
CC  
0.15 V  
CC  
V
CC  
= 0.8 V  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
TYP  
MIN MAX  
MIN MAX  
MIN TYP MAX  
MIN MAX  
t
t
t
A or B  
1
5
0.6  
0.5  
0.5  
0.4  
ns  
ns  
ns  
B or A  
A or B  
A or B  
pd  
C
C
0.5  
0.5  
3
4
0.5  
0.5  
2.1  
3
0.5  
0.5  
0.9  
2.6  
1.6  
3.3  
0.5  
0.5  
1.4  
2.7  
en  
5.3  
dis  
The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance when  
driven by an ideal voltage source (zero output impedance).  
switching characteristics over recommended operating free-air temperature range, C = 30 pF  
L
(unless otherwise noted) (see Figure 5)  
V
= 1.8 V  
0.15 V  
V
= 2.5 V  
CC  
CC  
0.2 V  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
MIN  
TYP  
MAX  
MIN MAX  
t
t
t
A or B  
0.7  
0.7  
2.3  
2
ns  
ns  
ns  
B or A  
A or B  
A or B  
pd  
C
C
0.5  
0.5  
1.6  
2.7  
2.7  
3.4  
0.5  
0.5  
en  
dis  
The propagation delay is the calculated RC time constant of the typical on-state resistance of the switch and the specified load capacitance when  
driven by an ideal voltage source (zero output impedance).  
analog switch characteristics, T = 25°C  
A
FROM  
TO  
(OUTPUT)  
PARAMETER  
(INPUT)  
TEST CONDITIONS  
V
CC  
TYP  
UNIT  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
101  
150  
175  
250  
400  
450  
>500  
>500  
>500  
>500  
−60  
−60  
−60  
−60  
−60  
−65  
−65  
−65  
−65  
−65  
C
= 50 pF, R = 600 ,  
= sine wave  
L
L
f
in  
(see Figure 6)  
Frequency response  
(switch ON)  
A or B  
B or A  
MHz  
C
= 5 pF, R = 50 ,  
L
L
f
= sine wave  
in  
(see Figure 6)  
C
= 50 pF, R = 600 ,  
L
L
f
= 1 MHz (sine wave)  
in  
(see Figure 7)  
§
Crosstalk  
(between switches)  
A or B  
B or A  
dB  
C
= 5 pF, R = 50 ,  
L
L
f
= 1 MHz (sine wave)  
in  
(see Figure 7)  
§
Adjust f voltage to obtain 0 dBm at output. Increase f frequency until dB meter reads −3 dB.  
in  
Adjust f voltage to obtain 0 dBm at input.  
in  
in  
4
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SCES507 − NOVEMBER 2003  
analog switch characteristics, T = 25°C (continued)  
A
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
TEST CONDITIONS  
V
CC  
TYP  
UNIT  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
9
14  
C
= 50 pF, R = 600 ,  
L
L
Crosstalk  
(control input to signal output)  
15  
C
A or B  
mV  
f
= 1 MHz (square wave)  
in  
(see Figure 8)  
16  
20  
−50  
−50  
−50  
−50  
−50  
−60  
−60  
−60  
−60  
−60  
7
C
= 50 pF, R = 600 ,  
L
L
f
in  
= 1 MHz (sine wave)  
(see Figure 9)  
Feed-through attenuation  
(switch OFF)  
A or B  
B or A  
dB  
C
= 5 pF, R = 50 ,  
L
L
f
in  
= 1 MHz (sine wave)  
(see Figure 9)  
0.25  
6
1.1 V  
C
= 50 pF, R = 10 k,  
= 1 kHz (sine wave)  
L
L
A or B  
B or A  
f
in  
1.4 V  
1.65 V  
2.3 V  
0.8 V  
1.1 V  
1.4 V  
1.65 V  
2.3 V  
0.04  
0.03  
0.01  
3.7  
(see Figure 10)  
Sine-wave distortion  
%
0.4  
C
= 50 pF, R = 10 k,  
L
L
A or B  
B or A  
0.04  
0.02  
0.02  
f
in  
= 10 kHz (sine wave)  
(see Figure 10)  
Adjust f voltage to obtain 0 dBm at input.  
in  
operating characteristics, T = 25°C  
A
V
= 0.8 V  
CC  
TYP  
V
= 1.2 V  
CC  
TYP  
V
= 1.5 V  
CC  
TYP  
V
= 1.8 V  
CC  
TYP  
V = 2.5 V  
CC  
TEST  
PARAMETER  
UNIT  
CONDITIONS  
TYP  
Power dissipation  
capacitance  
C
f = 10 MHz  
2.5  
2.5  
2.5  
2.5  
2.5  
pF  
pd  
5
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ꢄꢋ  
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ꢄꢋ ꢑꢈ ꢀ ꢒꢍ ꢎ ꢆꢓ  
SCES507 − NOVEMBER 2003  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
V
CC  
B or A  
A or B  
V = V  
I
or GND  
V
CC  
O
C
V
IH  
V
C
(ON)  
GND  
I
S
VI * VO  
ron  
+
W
IS  
V
V − V  
I
O
Figure 1. On-State Resistance Test Circuit  
120  
100  
V
CC  
= 1.1 V  
80  
60  
40  
V
CC  
= 1.65 V  
20  
0
V
CC  
= 2.3 V  
0
1
2
3
Figure 2. Typical r as a Function of Voltage (V ) for V = 0 to V  
CC  
on  
I
I
6
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ꢋꢄꢎ  
ꢏꢐ  
ꢄꢋ  
ꢄꢁ  
SCES507 − NOVEMBER 2003  
PARAMETER MEASUREMENT INFORMATION  
V
V
CC  
CC  
B or A  
A or B  
V
I
A
V
O
C
V
IL  
V
C
(OFF)  
GND  
Condition 1: V = GND, V = V  
CC  
I
O
Condition 2: V = V , V = GND  
I
CC  
O
Figure 3. Off-State Switch Leakage-Current Test Circuit  
V
CC  
V
CC  
B or A  
A or B  
A
V = V  
I CC  
or GND  
V
O
V
O
= Open  
C
V
IH  
V
C
(ON)  
GND  
Figure 4. On-State Leakage-Current Test Circuit  
7
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ꢄꢋ  
ꢑꢈ  
ꢒꢍ  
ꢆꢓ  
SCES507 − NOVEMBER 2003  
PARAMETER MEASUREMENT INFORMATION  
V
LOAD  
Open  
S1  
R
L
From Output  
Under Test  
TEST  
S1  
GND  
t
t
/t  
Open  
PLH PHL  
/t  
C
L
t
V
R
PLZ PZL  
LOAD  
GND  
L
(see Note A)  
/t  
PHZ PZH  
LOAD CIRCUIT  
INPUTS  
V
CC  
V
M
V
C
R
V
LOAD  
L
L
V
I
t /t  
r f  
0.8 V  
V
2 ns  
2 ns  
2 ns  
2 ns  
2 ns  
2 ns  
2 ns  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
/2  
/2  
/2  
/2  
/2  
/2  
/2  
2 × V  
2 × V  
2 × V  
2 × V  
2 × V  
2 × V  
2 × V  
15 pF  
15 pF  
15 pF  
15 pF  
15 pF  
30 pF  
30 pF  
2 kΩ  
2 kΩ  
2 kΩ  
2 kΩ  
2 kΩ  
1 kΩ  
500 Ω  
0.1 V  
0.1 V  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
CC  
1.2 V 0.1 V  
1.5 V 0.1 V  
V
V
V
V
V
V
0.1 V  
1.8 V 0.15 V  
2.5 V 0.2 V  
1.8 V 0.15 V  
2.5 V 0.2 V  
0.15 V  
0.15 V  
0.15 V  
0.15 V  
V
I
Timing Input  
V
M
0 V  
t
w
t
t
su  
h
V
I
V
I
Input  
V
M
V
M
Data Input  
V
M
V
M
0 V  
0 V  
VOLTAGE WAVEFORMS  
PULSE DURATION  
VOLTAGE WAVEFORMS  
SETUP AND HOLD TIMES  
V
I
V
I
Output  
Control  
V
M
V
M
Input  
V
M
V
M
0 V  
V
0 V  
t
t
t
t
t
PHL  
PZL  
PLZ  
+ V  
PLH  
PHL  
Output  
Waveform 1  
V
/2  
OH  
LOAD  
V
V
V
M
Output  
M
V
V
M
S1 at V  
(see Note B)  
V
LOAD  
OL  
V
OL  
V
OL  
t
PLH  
t
t
PZH  
PHZ  
− V  
Output  
Waveform 2  
S1 at GND  
V
V
OH  
V
OH  
V
V
M
OH  
M
Output  
M
0 V  
OL  
(see Note B)  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES  
INVERTING AND NONINVERTING OUTPUTS  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
LOW- AND HIGH-LEVEL ENABLING  
NOTES: A. includes probe and jig capacitance.  
C
L
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, Z = 50 , slew rate 1 V/ns.  
O
D. The outputs are measured one at a time with one transition per measurement.  
E.  
F.  
G.  
t
t
t
and t  
and t  
and t  
PHL  
are the same as t  
.
dis  
PLZ  
PZL  
PLH  
PHZ  
PZH  
are the same as t  
.
en  
are the same as t .  
pd  
H. All parameters and waveforms are not applicable to all devices.  
Figure 5. Load Circuit and Voltage Waveforms  
8
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ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢉ  
ꢊꢅꢄ ꢋ ꢌꢍ ꢋꢄꢎ ꢏꢐꢄꢋ ꢄꢁꢄ ꢋꢑ ꢈ ꢀ ꢒꢍ ꢎꢆ ꢓ  
SCES507 − NOVEMBER 2003  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
V
CC  
0.1 µF  
B or A  
A or B  
C
V
O
R
L
C
L
V
IH  
50 Ω  
f
V
C
in  
(ON)  
GND  
V
CC  
/2  
R /C : 600 / 50 pF  
L
L
R /C : 50 / 5 pF  
L
L
Figure 6. Frequency Response (Switch ON)  
V
V
CC  
CC  
0.1 µF  
1B or 1A  
1A or 1B  
V
O1  
R
in  
600 Ω  
C
50 pF  
R
600 Ω  
L
C
L
V
IH  
50 Ω  
V
C
f
in  
(On)  
V
CC  
/2  
2B or 2A  
2A or 2B  
V
O2  
R
600 Ω  
C
L
50 pF  
L
C
R
in  
600 Ω  
V
IL  
V
C
(Off)  
GND  
V
CC  
/2  
20log (V /V ) or  
10 O2 I1  
20log (V /V  
)
10 O1 I2  
Figure 7. Crosstalk (Between Switches)  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
ꢀ ꢁꢂ ꢃꢄ ꢅ ꢆꢇ ꢈꢉ ꢉ  
ꢊ ꢅꢄꢋ ꢌ ꢍ ꢋ ꢄꢎ ꢏꢐ ꢄꢋ ꢄꢁ ꢄꢋ ꢑꢈ ꢀ ꢒꢍ ꢎ ꢆꢓ  
SCES507 − NOVEMBER 2003  
PARAMETER MEASUREMENT INFORMATION  
V
V
CC  
CC  
R
in  
600 Ω  
B or A  
A or B  
C
V
CC  
/2  
V
O
R
600 Ω  
C
L
L
50 pF  
V
C
GND  
V
CC  
/2  
50 Ω  
Figure 8. Crosstalk (Control Input − Switch Output)  
V
CC  
V
CC  
0.1 µF  
50 Ω  
B or A  
A or B  
C
V
O
C
R
R
L
L
L
V
IL  
V
C
f
in  
(OFF)  
GND  
V
CC  
/2  
V
CC  
/2  
R /C : 600 / 50 pF  
L
L
R /C : 50 / 5 pF  
L
L
Figure 9. Feed Through, Switch Off  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
ꢀꢁ ꢂꢃ ꢄꢅ ꢆꢇ ꢈ ꢉꢉ  
ꢊꢅꢄ ꢋ ꢌꢍ ꢋꢄꢎ ꢏꢐꢄꢋ ꢄꢁꢄ ꢋꢑ ꢈ ꢀ ꢒꢍ ꢎꢆ ꢓ  
SCES507 − NOVEMBER 2003  
PARAMETER MEASUREMENT INFORMATION  
V
V
CC  
CC  
10 µF  
10 µF  
B or A  
A or B  
C
V
O
C
R
10 kΩ  
L
L
V
IH  
50 pF  
600 Ω  
V
C
f
in  
(ON)  
GND  
V
CC  
/2  
V
CC  
V
CC  
V
CC  
V
CC  
V
CC  
= 0.8 V, V = 0.7 V  
I
P-P  
= 1.1 V, V = 1 V  
I
I
P-P  
P-P  
= 1.4 V, V = 1.2 V  
= 1.65 V, V = 1.4 V  
P-P  
I
= 2.3 V, V = 2 V  
I
P-P  
Figure 10. Sine-Wave Distortion  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
MECHANICAL DATA  
MPDS049B – MAY 1999 – REVISED OCTOBER 2002  
DCT (R-PDSO-G8)  
PLASTIC SMALL-OUTLINE PACKAGE  
0,30  
0,15  
M
0,13  
0,65  
8
5
0,15 NOM  
2,90  
2,70  
4,25  
3,75  
Gage Plane  
PIN 1  
INDEX AREA  
0,25  
1
4
0° – 8°  
0,60  
0,20  
3,15  
2,75  
1,30 MAX  
Seating Plane  
0,10  
0,10  
0,00  
4188781/C 09/02  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion  
D. Falls within JEDEC MO-187 variation DA.  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,  
enhancements, improvements, and other changes to its products and services at any time and to discontinue  
any product or service without notice. Customers should obtain the latest relevant information before placing  
orders and should verify that such information is current and complete. All products are sold subject to TI’s terms  
and conditions of sale supplied at the time of order acknowledgment.  
TI warrants performance of its hardware products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI  
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TI assumes no liability for applications assistance or customer product design. Customers are responsible for  
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power.ti.com  
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