SN75374 [TI]
QUADRUPLE MOSFET DRIVER; 翻两番MOSFET驱动器
| 型号： | SN75374 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | QUADRUPLE MOSFET DRIVER |
| 文件： | 总13页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
D OR N PACKAGE
(TOP VIEW)
• Quadruple Circuits Capable of Driving
High-Capacitance Loads at High Speeds
• Output Supply Voltage Range From 5 V
V
V
1
2
3
4
5
6
7
8
16
15
14
CC1
CC2
1Y
to 24 V
4Y
4A
• Low Standby Power Dissipation
1A
1E1
1E2
2A
• V
Supply Maximizes Output Source
Voltage
CC3
13 2E2
12 2E1
11
10
9
3A
3Y
V
description
2Y
GND
CC3
The SN75374 is a quadruple NAND interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides the high current and
voltage necessary to drive large capacitive loads
at high speeds.
schematic (each driver)
V
CC1
V
CC3
V
CC2
The outputs can be switched very close to the
To Other
Drivers
V
supply rail when V
is about 3 V higher
CC2
CC3
than V
. V
can also be tied directly to V
CC2 CC3 CC2
when the source voltage requirements are lower.
Input A
The SN75374 is characterized for operation from
0°C to 70°C.
Enable
E1
Enable
E2
Output
Y
†
logic symbol
GND
To Other
Drivers
logic diagram (positive logic)
4
1E1
5
1E2
12
2E1
13
2E2
2
1Y
3
1A
7
2Y
3Y
6
2A
†
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12
10
15
11
3A
4Y
14
4A
Copyright 1988, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
3–1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range of V
Supply voltage range of V
Supply voltage range of V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 30 V
CC1
CC2
CC3
Input voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
I
Peak output current, I (t < 10 ms, duty cycle < 50%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
I
w
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
Storage temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTE 1: Voltage values are with respect to network ground terminal.
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T = 70° C
A
POWER RATING
A
PACKAGE
POWER RATING
ABOVE T = 25°C
A
D
N
950 mW
7.6 mW/°C
9.2 mW/°C
608 mW
1150 mW
736 mW
recommended operating conditions
MIN NOM
MAX
5.25
24
UNIT
V
Supply voltage, V
Supply voltage, V
Supply voltage, V
4.75
5
20
24
4
CC1
CC2
CC3
4.75
V
V
28
V
CC2
0
Voltage difference between supply voltages: V
CC3
– V
10
V
CC2
High-level input voltage, V
IH
2
V
Low-level input voltage, V
0.8
–10
40
V
IL
High-level output current, I
High-level output current, I
mA
mA
°C
OH
OL
Operating free-air temperature, T
0
70
A
3–2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
electrical characteristics over recommended ranges of V
temperature (unless otherwise noted)
, V
, V
, and operating free-air
CC1 CC2 CC3
†
TYP
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V
V
Input clamp voltage
I = –12 mA
–1.5
V
IK
I
–
V
V
V
V
V
V
= V
= V
= V
= V
+ 3 V,
+ 3 V,
V
V
V
V
= 0.8 V,
= 0.8 V,
= 0.8 V,
= 0.8 V,
= 10 mA
= 2 V,
I
I
I
I
= –100 µA
= –10 mA
= –50 µA
= –10 mA
V
V
–0.3
–1.3
V
V
V
0.1
CC3
CC3
CC3
CC3
CC2
CC2
CC2
CC2
IL
OH
OH
OH
OH
CC2
CC2
CC2
CC2
CC2
–0.9
–0.7
–1.8
0.15
0.25
IL
CC2
High-level output voltage
V
OH
,
,
V
–1
IL
CC2
–2.5
CC2
V
V
IL
= 2 V,
I
0.3
0.5
IH
OL
V
V
Low-level output voltage
V
V
OL
= 15 V to 28 V,
V
IH
I
= 40 mA
CC2
OL
Output clamp-diode
forward voltage
V = 0,
I
I
F
= 20 mA
1.5
1
F
Input current at
maximum input voltage
I
I
V = 5.5 V
I
mA
µA
Any A
Any E
Any A
Any E
40
80
High-level
input current
I
IH
V = 2.4 V
I
–1
–2
–1.6
–3.2
low-level
input current
I
I
I
I
I
I
I
V = 0.4 V
I
mA
IL
Supply current from
, all outputs high
4
–2.2
2.2
8
0.25
3.5
47
CC1(H)
CC2(H)
CC3(H)
CC1(L)
CC2(L)
CC3(L)
V
CC1
Supply current from
, all outputs high
V
= 5.25 V,
V
= 24 V,
V
V
= 28 V,
CC1
All inputs at 0 V,
CC2
No load
CC3
CC3
mA
V
CC2
Supply current from
, all outputs high
V
CC3
Supply current from
, all outputs low
31
V
CC1
Supply current from
, all outputs low
V
= 5.25 V,
V
= 24 V,
= 28 V,
CC1
All inputs at 5 V,
CC2
No load
2
mA
V
CC2
Supply current from
, all outputs low
16
27
V
CC1
Supply current from
, all outputs high
I
I
0.25
0.5
0.25
0.5
CC2(H)
V
CC2
Supply current from
, all outputs high
V
= 5.25 V,
V
= 24 V,
V
V
= 24 V,
= 24 V,
CC1
All inputs at 0 V,
CC2
No load
CC3
mA
mA
CC3(H)
V
CC3
Supply current from
, standby condition
I
I
CC2(S)
V
V
= 0,
V
= 24 V,
CC2
Supply current from
, standby condition
CC1
All inputs at 0 V,
CC2
No load
CC3
CC3(S)
V
CC3
†
All typical values are at V
conditions.
= 5 V, V
CC2
= 20 V, V
CC3
= 24 V, and T = 25°C except for V
OH
for which V
and V
are as stated under test
CC3
CC1
A
CC2
switching characteristics, V
= 5 V, V
= 20 V, V
= 24 V, T = 25°C
CC1
CC2
CC3
A
PARAMETER
Delay time, low-to-high-level output
Delay time, high-to-low-level output
TEST CONDITIONS
MIN
TYP
MAX
30
UNIT
ns
t
t
t
t
t
t
20
10
40
30
20
20
DLH
DHL
PLH
PHL
TLH
THL
20
ns
C
R
= 200 pF
= 24 Ω,
L
D
Propagation delay time, low-to-high-level output
Propagation delay time, high-to-low-level output
Transition time, low-to-high-level output
10
10
60
ns
50
ns
See Figure 1
30
ns
Transition time, high-to-low-level output
30
ns
3–3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
PARAMETER MEASUREMENT INFORMATION
24 V
20 V
5 V
Input
2.4 V
V
CC1
V
V
CC2
CC3
R
D
Pulse
Generator
(see Note A)
Output
= 200 pF
(see Note B)
C
L
GND
TEST CIRCUIT
≤ 10 ns
≤ 10 ns
3 V
0 V
90%
1.5 V
90%
Input
1.5 V
0.5 µs
t
10%
t
10%
PHL
t
DHL
PLH
DLH
t
TLH
t
THL
V
V
OH
V
CC2
–2 V
V
–2 V
CC2
t
Output
2 V
2 V
OL
VOLTAGE WAVEFORMS
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, Z ≈ 50 Ω.
O
B.
C includes probe and jig capacitance.
L
3–4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE
HIGH-LEVEL OUTPUT VOLTAGE
vs
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT CURRENT
V
V
CC2
CC2
V
V
= 5 V
CC1
CC2
= V
= 20 V
CC3
V1 = 0.8 V
– 0.5
– 1
–0.5
–1
T
= 70°C
= 0°C
A
T
A
T
= 25°C
A
– 1.5
– 2
–1.5
–2
T
A
= 70°C
T
A
= 0°C
V
V
V
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
– 2.5
–2.5
–3
V = 0.8 V
I
– 3
– 0.01
– 0.1
– 1
– 10
– 100
–0.01
–0.1
–1
–10
–100
I
– High-Level Output Current – mA
I
– High-Level Output Current – mA
OH
OH
Figure 2
Figure 3
LOW-LEVEL OUTPUT VOLTAGE
vs
VOLTAGE TRANSFER CHARACTERISTICS
LOW-LEVEL OUTPUT CURRENT
0.5
0.4
0.3
0.2
0.1
0
24
20
16
12
8
V
V
V
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
V = 2 V
I
T
A
= 70°C
T
A
= 0°C
V
V
V
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
4
T
= 25°C
A
No Load
0
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
I
– Low-Level Output Current – mA
V – Input Voltage – V
I
OL
Figure 4
Figure 5
3–5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME
LOW-TO-HIGH-LEVEL OUTPUT
vs
PROPAGATION DELAY TIME
HIGH-TO-LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
C
= 4000 pF
L
V
V
V
= 5 V
= 20 V
= 24 V
C
= 4000 pF
= 2000 pF
CC1
CC2
CC3
L
V
V
V
= 5V
= 20V
= 24V
R
= 24 Ω
CC1
CC2
CC3
D
See Figure 1
C
C
= 2000 pF
= 1000 pF
L
L
R = 24 Ω
See Figure 1
D
C
C
L
L
= 1000 pF
= 200 pF
50
50
C
C
= 200 pF
= 50 pF
C
L
L
L
25
0
25
0
C
= 50 pF
L
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
T
A
– Free-Air Temperature – °C
T
A
– Free-Air Temperature – °C
Figure 6
Figure 7
PROPAGATION DELAY TIME
PROPAGATION DELAY TIME
LOW-TO-HIIGH-LEVEL OUTPUT
vs
HIGH-TO-LOW-LEVEL OUTPUT
vs
V
SUPPLY VOLTAGE
V
SUPPLY VOLTAGE
CC2
CC2
250
250
225
200
175
150
125
100
75
V
V
R
= 5 V
= V
= 24 Ω
= 25°C
CC1
CC3
D
V
CC1
V
CC3
= 5 V
+ 4 V
225
200
175
150
125
100
75
CC2
= V
+ 4 V
CC2
C
= 4000 pF
L
C = 4000 pF
L
R
= 24 Ω
D
T
A
T
A
= 25°C
See Figure 1
See Figure 1
C
= 2000 pF
C
= 2000 pF
= 1000 pF
L
L
C
C
= 1000 pF
= 200 pF
C
L
L
50
50
C
= 50 pF
C
= 200 pF
L
C = 50 pF
L
L
L
25
0
25
0
0
5
10
15
20
25
0
5
10
15
20
25
V
CC2
– Supply Voltage – V
V
CC2
– Supply Voltage – V
Figure 8
Figure 9
3–6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME
LOW-TO-HIGH-LEVEL OUTPUT
PROPAGATION DELAY TIME
HIGH-TO-LOW-LEVEL OUTPUT
vs
vs
LOAD CAPACITANCE
LOAD CAPACITANCE
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
V
V
V
T
= 5 V
= 20 V
= 24 V
V
V
V
T
= 5 V
= 20 V
= 24 V
CC1
CC2
CC3
CC1
CC2
CC3
= 25°C
= 25°C
A
A
See Figure 1
See Figure 1
R
R
= 24 Ω
= 10 Ω
R
R
= 24 Ω
= 10 Ω
D
D
D
D
R
= 0
R
= 0
D
D
50
50
25
25
0
0
0
1000
2000
3000
4000
0
1000
2000
3000
4000
C
– Load Capacitance – pF
C
– Load Capacitance – pF
L
L
Figure 10
Figure 11
POWER DISSIPATION (ALL DRIVERS)
vs
FREQUENCY
V
CC1
V
CC2
V
CC3
= 5 V
= 20 V
= 24 V
Input: 3-V Square Wave
(50% duty cycle)
2000
1800
1600
T
= 25°C
A
C
= 600 pF
L
1400
1200
C
= 1000 pF
L
C
= 2000 pF
L
1000
800
600
400
C
= 4000 pF
L
C
= 400 pF
400
L
200
0
10
20
40
70 100
200
1000
f – Frequency – khz
Figure 12
NOTE: For R = 0, operation with C > 2000 pF violates absolute maximum current rating.
D
L
3–7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
THERMAL INFORMATION
power dissipation precautions
Significant power may be dissipated in the SN75374 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 12 shows the power dissipated in a typical SN75374
as a function of frequency and load capacitance. Average power dissipated by this driver is derived from the
equation
P
= P
+ P
+ P
T(AV)
DC(AV)
C(AV) S(AV)
where P
is the steady-state power dissipation with the output high or low, P
is the power level during
DC(AV)
C(AV)
charging or discharging of the load capacitance, and P
is the power dissipation during switching between
S(AV)
the low and high levels. None of these include energy transferred to the load and all are averaged over a full
cycle.
The power components per driver channel are
P
P
t
t
t
H H
t
L L
LH
HL
P
P
P
DC(AV)
C(AV)
S(AV)
T
2Cf
t
C V
H
P
t
P
t
LH
LH
HL HL
t
L
T
T = 1/f
Figure 13. Output Voltage Waveform
where the times are as defined in Figure 15.
3–8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
THERMAL INFORMATION
P , P , P , and P are the respective instantaneous levels of power dissipation, C is the load capacitance.
L
H
LH
HL
V is the voltage across the load capacitance during the charge cycle shown by the equation
C
V = V
– V
OL
C
OH
P
may be ignored for power calculations at low frequencies.
S(AV)
In the following power calculation, all four channels are operating under identical conditions: f = 0.2 MHz,
= 19.9 V and V = 0.15 V with V = 5 V, V = 20 V, V = 24 V, V = 19.75 V, C = 1000 pF, and the
V
OH
OL
CC1
CC2
S(AV)
CC3
C
duty cycle = 60%. At 0.2 MHz for C < 2000 pF, P
is low, I
is negligible and can be ignored. When the output voltage
L
is negligible and can be ignored.
CC2
On a per-channel basis using data sheet values,
4 mA
2.2 mA
2.2 mA
4
P
(5 V)
(5 V)
(20 V)
(20 V)
(24 V)
(0.6)
DC(AV)
4
4
31 mA
4
0 mA
4
16 mA
(24 V)
(0.4)
4
P
= 58.2 mW per channel
DC(AV)
Power during the charging time of the load capacitance is
2
P
= (1000 pF) (19.75 V) (0.2 MHz) = 78 mW per channel
C(AV)
Total power for each driver is
= 58.2 mW + 78 mW = 136.2 mW
P
T(AV)
The total package power is
= (136.2) (4) = 544.8 mW
P
T(AV)
3–9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance
in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup
resistor is not satisfactory for high-speed applications. In Figure 13(a), an IRF151 power MOSFET switching
an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (C ) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the
ISS
product of input capacitance and the pullup resistor is shown in Figure 13(b).
48 V
5 V
M
4
470 Ω
3
2
4
8
IRF151
7
3
5
TLC555
1
0
6
2
1
1/2 SN75447
0
0.5
1
1.5
2
2.5
3
t – Time – µs
(a)
(b)
Figure 14. Power MOSFET Drive Using SN75447
A faster, more efficient drive circuit uses an active pull-up as well as an active pull-down output configuration,
referred to as a totem-pole output. The SN75374 driver provides the high-speed totem-pole drive desired in an
application of this type, see Figure 14(a). The resulting faster switching speeds are shown in Figure 14(b).
48 V
5 V
M
4
3
2
1
0
4
8
7
3
5
TLC555
IRF151
6
1/4 SN75374
2
1
0
0.5
1
1.5
2
2.5
3
t – Time – µs
(a)
(b)
Figure 15. Power MOSFET Drive Using SN75374
3–10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
APPLICATION INFORMATION
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation
VC
I
PK
t
r
where C is the capacitive load, and t is the desired rise time. V is the voltage that the capacitance is charged
r
to. In the circuit shown in Figure 14(a), V is found by the equation
V = V
– V
OL
OH
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14(a) is
9
(3 0)4(10
100(10
)
I
120 mA
PK
9
)
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a V of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V.
CC
For applications in which the full voltage of V
must be supplied to the MOSFET gate, V
should be at least
CC2
CC3
3 V higher than V
.
CC2
3–11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3–12
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
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pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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