TAS5412TPHDRQ1 [TI]
具有 I2C 诊断和负载突降保护功能的汽车类 28W、2 通道、6V 至 24V 模拟单端输入 D 类音频放大器 | PHD | 64 | -40 to 105;型号: | TAS5412TPHDRQ1 |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有 I2C 诊断和负载突降保护功能的汽车类 28W、2 通道、6V 至 24V 模拟单端输入 D 类音频放大器 | PHD | 64 | -40 to 105 放大器 商用集成电路 音频放大器 |
文件: | 总40页 (文件大小:2242K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
双通道汽车用数字放大器
查询样品: TAS5412-Q1
1
特性
–
–
–
过热保护
过压及欠压保护
片段检测
234
•
TAS5412-Q1 - 单端输入
•
2 通道数字功率放大器
•
TAS5412-Q1 - 64 引脚四方扁平封装 (QFP) (PHD)
PowerPAD™ 表面贴装封装
•
•
2 个模拟输入,2 个桥接负载 (BTL) 功率输出
10% 时,每通道典型输出功率
•
•
•
•
•
与 4 通道器件引脚兼容
–
–
–
–
–
14.4 VDC 供电时,为 4Ω 负载提供每通道 28W
功率
设计用于汽车电磁兼容性 (EMC) 要求
将符合 AEC-Q100 标准要求
经 ISO9000:2002 TS16949 认证
-40°至 105°C 环境温度范围
14.4 VDC 供电时,为 2Ω 负载提供每通道 46W
功率
24 VDC 供电时,为 2Ω 负载提供每通道 79W
功率
应用范围
24 VDC 并行桥接负载 (PBTL) 时,为 2Ω 负载
提供 150W 功率
•
•
无线电广播音响本体
外部放大器
14.4 VDC PBTL 时,为 1Ω 负载提供 90W 功
率
•
总谐波失真 (THD) + N < 0.02%,1kHz,为 4Ω 负
载提供 1W 功率
说明
此器件是一款 2 通道数字音频放大器,此放大器设计
用于汽车音响本体和外部放大器。 它在电源电压为
14.4V,THD + N 为 10% 时,用两个通道为 4Ω 负载
提供 28W 功率,或者在 THD + N 为 10% 时为 2Ω 负
载提供 46W 功率。 此数字脉宽调制 (PWM) 拓扑结构
极大提升了传统线性放大器解决方案的效率。 这将典
型音乐回放条件下放大器的功率耗散减少了因数 10。
此器件包含一个已获专利的 PWM 设计,此设计在汽
车应用中常见的恶劣电气环境中提供出色的电源抑制。
应用可在无需复杂电源系统配置的情况下获得高效率。
此设计可实现多个器件的同步。
•
•
•
•
•
•
•
已获专利的弹出和点击衰减技术
已获专利的 AM 干扰避免
已获专利的逐周期电流限制
75dB 电源抑制比 (PSRR)
针对器件配置和控制的 4 地址 I2C 串行接口
通道增益:12dB,20dB,26dB,32dB
负载诊断功能:
–
–
–
输出打开和短接负载
输出到电源和输出到接地短接
已获专利的高频扬声器侦测
•
保护和监控功能:
此器件包含在要求严格的 OEM 应用领域内执行所需的
全部功能,其中包括用于检测和诊断错误连接输出的负
载诊断功能。
–
–
–
–
短路保护
50V 负载突降保护
偶然开放式接地和电源容错
这份与其它数据表内容无关的文本只用于调整首页内的
列长度。
已获专利的在音乐播放同时进行输出 DC 电平
检测
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
3
4
PowerPAD is a trademark of Texas Instruments.
Ceramique is a trademark of Arctic Silver Inc.
Arctic Silver is a registered trademark of Arctic Silver Inc.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
English Data Sheet: SLOS685
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
TAS5412-Q1 FUNCTIONAL BLOCK DIAGRAM
PIN ASSIGNMENTS AND FUNCTIONS
The pin assignments are as follows:
2
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
TAS5412-Q1
PHD Package
(Top View)
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
NU
NU
1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
FAULT
MUTE
GND
2
3
GND
OUT1_M
OUT1_P
4
STANDBY
D_BYP
5
CLIP_OTW
GND
6
GND
CPC_TOP
7
GND
8
CP
CP_BOT
GND
9
REXT
10
11
12
13
14
15
16
GND
A_BYP
GND
OUT2_M
OUT2_P
GND
CM_CAP1
GND
GND
NU
IN1_P
NU
GND
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
P0070-03
Table 1. TERMINAL FUNCTIONS
TERMINAL
TYPE
DESCRIPTION
NAME
A_BYP
NO.
11
PBY
DO
Bypass pin for the AVDD analog regulator
Reports clip detect, tweeter detection, and overtemperature warning with open-drain
output
CLIP_OTW
6
CM_CAP1
CM_CAP2
CP
13
20
41
40
42
5
AI
AI
Common mode capacitor
Common mode capacitor
CP
CP
CP
PBY
DO
Top of main storage capacitor for charge pump
Bottom of flying capacitor for charge pump
Top of flying capacitor for charge pump
Bypass pin for DVDD regulator output
Global fault output (open-drain): UV, OV, OTSD, OCSD, dc
CPC_BOT
CPC_TOP
D_BYP
FAULT
1
Copyright © 2013, Texas Instruments Incorporated
3
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
Table 1. TERMINAL FUNCTIONS (continued)
TERMINAL
TYPE
DESCRIPTION
NAME
NO.
3, 7-9, 12,14,
16, 17, 21–26,
30–32, 35, 38,
39, 43, 49–51,
55–60
GND
GND
Ground
I2C_ADDR
IN1_P
62
AI
AI
I2C address bit
15
Non-inverting analog input for channel 1
Non-inverting analog input for channel 2
Signal return for both analog channel inputs
Gain-ramp control
IN2_P
19
AI
IN_M
18
ARTN
DI
MUTE
2
NU
33, 34, 47, 48
NC
No connect, do not connect to ground
Oscillator input from master or output to slave amplifiers
– polarity output for bridge 1
OSC_SYNC
OUT1_M
OUT1_P
OUT2_M
OUT2_P
PVDD
61
DI, DO
PO
45
44
PO
+ polarity output for bridge 1
37
PO
– polarity output for bridge 2
36
PO
+ polarity output for bridge 2
27–29, 52–54
PWR
AI
PVDD supply
REXT
10
64
63
4
Precision resistor pin to set analog reference
I2C clock input from system I2C master
I2C data I/O for communication with system I2C master
Active-low STANDBY pin. Standby (low), power up (high)
SCL
DI
SDA
DI, DO
DI
STANDBY
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
V
PVDD
DC supply voltage range
Relative to GND
–0.3 to 30
–1 to 50
15
PVDD MAX
PVDD RAMP
IPVDD
Pulsed supply-voltage range
t ≤ 400 ms exposure
V
Supply-voltage ramp rate
V/ms
A
Externally imposed dc supply current per PVDD or GND pin
Pulsed supply current per PVDD pin (one shot)
Maximum allowed dc current per output pin
Pulsed output current per output pin (single pulse)
±12
IPVDD_MAX
IO
t < 100 ms
17
A
±13.5
±17
A
(1)
IO_MAX
t < 100 ms
A
(2)
IIN_MAX
Maximum current, all digital and analog input pins
DC or pulsed
DC or pulsed
±1
mA
mA
mA
IMUTE_MAX
IIN_ODMAX
Maximum current on MUTE pin
±20
Maximum sinking current for open-drain pins
7
Input voltage range for logic pin relative to GND (SCL and
SDA pins)
VLOGIC
–0.3 to 6
V
VI2C_ADDR
VSTANDBY
VOSC_SYNC
Input voltage range for I2C_ADDR pin relative to GND
Input voltage range for STANDBY pin
–0.3 to 6
–0.3 to 5.5
–0.3 to 3.6
1.9
V
V
Input voltage range for OSC_SYNC pin relative to GND
V
VAIN_AC_MAX_5412 Maximum ac-coupled input voltage(2), analog input pins
Vrms
V
VGND
TJ
Maximum voltage between GND pins
Maximum operating junction temperature range
Storage temperature range
±0.3
–55 to 150
–55 to 150
°C
°C
Tstg
(1) Pulsed-current ratings are maximum survivable currents externally applied to the TAS5412-Q1. Reverse-battery, fortuitous open-ground,
and fortuitous open-supply fault conditions may result in high currents.
(2) See Application Information section for information on analog input voltage and ac coupling.
4
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
THERMAL CHARACTERISTICS
PARAMETER
VALUE (Typical)
UNIT
°C/W
mm
RθJC
Junction-to-case (heat slug) thermal resistance
Exposed pad dimensions
1.7
8 × 8
ELECTROSTATIC DISCHARGE (ESD)
PARAMETER
PINS
VALUE (Typical)
UNIT
Human-body model (HBM) AEC-
Q100-002
ALL
3000
Corner pins excluding SCL
750
600
400
100
Charged-device model (CDM)
AEC-Q100-011
All pins (including SCL) except CP and CP_TOP
CP and CP_TOP pins
V
Machine model (MM) AEC-Q100- All
003
Copyright © 2013, Texas Instruments Incorporated
5
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
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(1)
RECOMMENDED OPERATING CONDITIONS
MIN
6
NOM
14.4
14.4
MAX
UNIT
V
PVDDOP
PVDDI2C
VAIN_5412
TA
DC supply voltage range relative to GND
DC supply voltage range for I2C reporting
Analog audio input signal level
Ambient temperature
24
5
26.5
V
(2)
(3)
AC-coupled input voltage
0
0.25–1
Vrms
°C
–40
105
115
An adequate heat sink is required
to keep TJ within specified range.
TJ
Junction temperature
–40
°C
RL
Nominal speaker load impedance
2
3
4
Ω
VPU
Pullup voltage supply (for open-drain logic outputs)
3.3 or 5
5.5
100
10
V
Resistor connected between open-
drain logic output and VPU supply
RPU_EXT
RPU_I2C
RI2C_ADD
External pullup resistor on open-drain logic outputs
I2C pullup resistance on SDA and SCL pins
10
1
47
kΩ
kΩ
4.7
Total resistance of voltage divider for I2C address
slave 1 or slave 2, connected between D_BYP and
GND pins
10
100
kΩ
RREXT
CD_BYP, C A_BYP
COUT
External resistance on REXT pin
1% tolerance required
19.8
10
20
20.2
120
680
kΩ
nF
nF
External capacitance on D_BYP and A_BYP pins
External capacitnace to GND on OUT_X pins
150
1
External capacitance to analog input pin in series
with input signal
CIN
µF
CFLY
Flying capacitor on charge pump
Charge-pump capacitor
0.47
0.47
100
1
1
1.5
1.5
µF
µF
nF
pF
CP
50 V needed for load dump
CMUTE
Capacitance on MUTE pin
330
75
COSCSYNC_MAX
Allowed loading capacitance on OSC_SYNC pin
(1) The Recommended Operating Conditionstable specifies only that the device is functional in the given range. See the Electrical
Characteristicstable for specified performance limits.
(2) Signal input for full unclipped output with gains of 32 dB, 26 dB, 20 dB, and 12 dB
(3) Maximum recommended input voltage is determined by the gain setting.
6
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
ELECTRICAL CHARACTERISTICS
Test conditions (unless otherwise noted): TCase= 25°C, PVDD = 14.4 V, RL= 4 Ω, fS = 417 kHz, Pout= 1 W/ch, Rext = 20 kΩ,
AES17 filter, master-mode operation (see application diagram)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
OPERATING CURRENT
IPVDD_IDLE
Both channels in MUTE mode
125
60
2
175
mA
PVDD idle current
IPVDD_Hi-Z
Both channels in Hi-Z mode
STANDBY mode, T J = 85°C
IPVDD_STBY
PVDD standby current
12
µA
OUTPUT POWER
4 Ω, PVDD = 14.4 V, THD+N = 1%, 1 kHz, T c= 75°C
4 Ω, PVDD = 14.4 V, THD+N = 10%, 1 kHz, T c= 75°C
4 Ω, PVDD = 24 V, THD+N = 1%, 1 kHz, T c= 75°C
4 Ω, PVDD = 24 V, THD+N = 10%, 1 kHz, T c= 75°C
2 Ω, PVDD = 14.4 V, THD+N = 1%, 1 kHz, T c= 75°C
2 Ω, PVDD = 14.4 V, THD+N = 10%, 1 kHz, T c= 75°C
23
28
62
79
38
50
25
63
40
POUT
Output power per channel
W
%
PBTL 2-Ω operation, PVDD = 24 V, THD+N = 10%,
1 kHz, T c= 75°C
150
90
PBTL 1-Ω operation, PVDD = 14.4 V, THD+N = 10%,
1 kHz, T c= 75°C
2 channels operating, 23-W output power per ch, L = 10
µH, T J = 85°C
EFFP
Power efficiency
90
AUDIO PERFORMANCE
VNOISE
Noise voltage at output
G = 26 dB, zero input, and A-weighting
1 W, G = 26 dB, 1 kHz
60
75
100
µV
dB
dB
Crosstalk
PSRR
Channel crosstalk
60
60
Power-supply rejection ratio
Total harmonic distortion + noise
G = 26 dB, PVDD = 14.4 Vdc + 1 Vrms, f = 1 kHz
P = 1 W, G = 26 dB, f = 1 kHz, 0°C = T J = 75°C
75
THD+N
0.02%
357
417
500
82
0.1%
378
442
530
106
336
392
470
63
Switching frequency selectable for AM interference
avoidance
fS
Switching frequency
kHz
RAIN
Analog input resistance
Internal shunt resistance on each input pin
kΩ
Vrms
V
AC-coupled common-mode input voltage (zero
differential input)
VIN_CM
VCM_INT
Common-mode input voltage
Internal common-mode input bias voltage
1.3
Internal bias applied to IN_M pin
3.37
12
20
26
32
0
11
19
25
31
–1
13
21
27
33
1
Source impedance = 0 Ω, gain measurement taken at 1
W of power per channel
G
Voltage gain (VO / VIN
)
dB
dB
GCH
Channel-to-channel variation
Any gain commanded
PWM OUTPUT STAGE
rDSon
FET drain-to-source resistance
Output offset voltage
Not including bond-wire resistance, T J= 25°C
75
95
mΩ
Zero input signal, dc offset reduction enabled, and
G = 26 dB
VO_OFFSET
±10
±50
mV
PVDD OVERVOLTAGE (OV) PROTECTION
VOV PVDD overvoltage shutdown
PVDD UNDERVOLTAGE (UV) PROTECTION
24.6
26.4
28.2
V
VUV_SET
PVDD undervoltage shutdown
Recovery voltage for PVDD UV
5
5.3
6.6
5.6
7.2
V
V
VUV_CLEAR
AVDD
6.2
VA_BYP
A_BYP pin voltage
A_BYP UV voltage
6.5
3.5
4.3
V
V
V
VA_BYP_UV_SET
VA_BYP_UV_CLEAR Recovery voltage A_BYP UV
DVDD
VD_BYP
D_BYP pin voltage
3.3
V
POWER-ON RESET (POR)
Copyright © 2013, Texas Instruments Incorporated
7
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
ELECTRICAL CHARACTERISTICS (continued)
Test conditions (unless otherwise noted): TCase= 25°C, PVDD = 14.4 V, RL= 4 Ω, fS = 417 kHz, Pout= 1 W/ch, Rext = 20 kΩ,
AES17 filter, master-mode operation (see application diagram)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Maximum PVDD voltage for POR; I2C active
above this voltage
VPOR
4
V
V
VPOR_HY
REXT
PVDD recovery hysteresis voltage for POR
0.1
VREXT
Rext pin voltage
1.27
V
CHARGE PUMP (CP)
VCPUV_SET
CP undervoltage
Recovery voltage for CP UV
4.8
4.9
V
V
VCPUV_CLEAR
OVERTEMPERATURE (OT) PROTECTION
TOTW1_CLEAR
96
112
122
128
138
T OTW1_SET
/
106
TOTW2_CLEAR
Junction temperature for overtemperature
warning
TOTW2_SET
/
116
126
136
130
132
142
152
150
148
158
168
170
TOTW3_CLEAR
°C
TOTW3_SET
/
TOTSD_CLEAR
Junction temperature for overtemperature
shutdown
TOTSD
Junction temperature for overtemperature
foldback
TFB
Per channel
CURRENT LIMITING PROTECTION
Level 1
5.5
7.3
9
ILIM
Current limit (load current)
A
A
Level 2 (default)
10.6
12.7
15
OVERCURRENT (OC) SHUTDOWN PROTECTION
Level 1, any short to supply, ground, or other channels
Level 2 (default)
7.8
9.8
12.2
17.7
IMAX
Maximum current (peak output current)
11.9
14.8
TWEETER DETECT
ITH_TW
Load-current threshold for tweeter detect
330
2
445
2.1
560
mA
A
ILIM_TW
Load-current limit for tweeter detect
STANDBY MODE
V IH_STBY
STANDBY input voltage for logic-level high
STANDBY input voltage for logic-level low
STANDBY pin current
V
V
VIL_STBY
0.7
0.2
ISTBY_PIN
0.1
100
µA
MUTE MODE
GMUTE
MUTE pin ≤ 0.5 Vdc for 200 ms, or I2C mute enabled
Output attenuation
dB
DC DETECT
VTH_DC_TOL
DC-detect threshold tolerance
25%
DC-detect step-response time for two
channels
tDCD
5.3
s
v
CLIP REPORT
VOH_CLIP_OTW
CLIP_OTW pin output voltage for logic level
high (open-drain logic output)
2.4
External 47-kΩ pullup resistor to 3 V–5.5 V
CLIP_OTW pin output voltage for logic-level
low (open-drain logic output)
VOL_CLIP_OTW
0.5
20
V
TDELAY_CLIPDET
Signal delay when output clipping detected
µs
MODE PINS (DIAG, SOFT_MUTE, I2C MODE)
Mode pin output voltage for logic-level high
(open-drain logic output)
VOH
2
0
5.5
0.7
V
V
Mode pin output voltage for logic-level low
(open-drain logic output)
VOL
FAULT REPORT
8
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
ELECTRICAL CHARACTERISTICS (continued)
Test conditions (unless otherwise noted): TCase= 25°C, PVDD = 14.4 V, RL= 4 Ω, fS = 417 kHz, Pout= 1 W/ch, Rext = 20 kΩ,
AES17 filter, master-mode operation (see application diagram)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
FAULT pin output voltage for logic-level high
(open-drain logic output)
V OH_FAULT
V OL_FAULT
2.4
External 47-kΩ pullup resistor to 3 V–5.5 V
V
FAULT pin output voltage for logic-level low
(open-drain logic output)
0.5
OPEN/SHORT DIAGNOSTICS
Maximum resistance to detect a short from
OUT pins to PVDD or ground
RS2P, RS2G
200
1300
1.5
Ω
Ω
Ω
Minimum load resistance to detect open
circuit
ROPEN_LOAD
RSHORTED_LOAD
Including speaker wires
Including speaker wires
300
0.5
800
1.0
Maximum load resistance to detect short
circuit
CHIP SELECT
Time delay to latch I2C address after POR
Voltage on CS pin for address 0
Voltage on CS pin for address 1
Voltage on CS pin for address 2
Voltage on CS pin for address 3
tLATCH_CS
300
0%
µs
Connect to GND
0%
25%
55%
85%
15%
45%
35%
65%
100%
External resistors in series between D_BYP and GND as
a voltage divider
VCS
VD_BYP
75%
Connect to D_BYP
100%
I2C
Power-on hold time before I2C
communication
tHOLD_I2C
STANDBY high
1
ms
fSCL
SCL clock frequency
400
5.5
1.1
kHz
V
VIH_SCL
VIL_SCL
SCL pin input voltage for logic-level high
SCL pin input voltage for logic-level low
2.1
R PU_I2C= 5-kΩ pullup, supply voltage = 3.3 V or 5 V
–0.5
V
I2C read, RI2C= 5-kΩ pullup,
supply voltage = 3.3 V or 5 V
VOH_SDA
VOL_SDA
VIH_SDA
SDA pin output voltage for logic-level high
SDA pin output voltage for logic-level low
SDA pin input voltage for logic-level high
2.4
V
V
V
I2C read, 3-mA sink current
0.4
5.5
I2C write, RI2C= 5-kΩ pullup,
supply voltage = 3.3 V or 5 V
2.1
I2C write, RI2C= 5-kΩ pullup,
supply voltage = 3.3 V or 5 V
VIL_SDA
SDA pin input voltage for logic-level low
Capacitance for SCL and SDA pins
–0.5
1.1
10
V
Ci
pF
OSCILLATOR
OSC_SYNC pin output voltage for logic-
level high
VOH_OSCSYNC
VOL_OSCSYNC
VIH_OSCSYNC
VIL_OSCSYNC
2.4
2
3.6
0.5
3.6
0.8
V
V
V
V
CS pin set to MASTER mode
CS pin set to SLAVE mode
OSC_SYNC pin output voltage for logic-
level low
OSC_SYNC pin input voltage for logic-level
high
OSC_SYNC pin input voltage for logic-level
low
CS pin set to MASTER mode, fS= 500 kHz
CS pin set to MASTER mode, fS= 417 kHz
CS pin set to MASTER mode, fS= 357 kHz
3.76
3.13
2.68
4
3.33
2.85
4.24
3.63
3
fOSC_SYNC
OSC_SYNC pin clock frequency
MHz
Copyright © 2013, Texas Instruments Incorporated
9
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
TIMING REQUIREMENTS FOR I2C INTERFACE SIGNALS
over recommended operating conditions (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
ns
tr
Rise time for both SDA and SCL signals
Fall time for both SDA and SCL signals
SCL pulse duration, high
300
300
tf
ns
tw(H)
tw(L)
tsu2
th2
0.6
1.3
0.6
0.6
100
µs
SCL pulse duration, low
µs
Setup time for START condition
START condition hold time after which first clock pulse is generated
Data setup time
µs
µs
tsu1
th1
ns
(1)
Data hold time
0
ns
tsu3
CB
Setup time for STOP condition
Load capacitance for each bus line
0.6
µs
400
pF
(1) A device must internally provide a hold time of at least 300 ns for the SDA signal to bridge the undefined region of the falling edge of
SCL.
tw(H)
tw(L)
tr
tf
SCL
tsu1
th1
SDA
T0027-01
Figure 1. SCL and SDA Timing
SCL
t(buf)
th2
tsu2
tsu3
SDA
Start
Condition
Stop
Condition
T0028-01
Figure 2. Timing for Start and Stop Conditions
10
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ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
TYPICAL CHARACTERISTICS
THD+N
versus
THD+N
versus
BTL OUTPUT POWER AT 1 kHz
PBTL OUTPUT POWER at 1 kHz
Figure 3.
Figure 4.
THD+N
versus
FREQUENCY AT 1 W
COMMON-MODE REJECTION RATIO
versus
FREQUENCY
Figure 5.
Figure 6.
Copyright © 2013, Texas Instruments Incorporated
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TAS5412-Q1
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www.ti.com.cn
TYPICAL CHARACTERISTICS (continued)
CROSSTALK
versus
FREQUENCY
NOISE FFT
Figure 7.
Figure 8.
EFFICIENCY,
TWO CHANNELS AT 4 Ω EACH
100
90
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
P − Power Per Channel − W
G007
Figure 9.
12
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
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ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
DESCRIPTION OF OPERATION
OVERVIEW
The device is a two-channel analog-input audio amplifier for use in the automotive environment. The design uses
an ultra-efficient class-D technology developed by Texas Instruments. This technology allows for reduced power
consumption, reduced heat, and reduced peak currents in the electrical system. The device realizes an audio
sound system design with smaller size and lower weight than traditional class-AB solutions.
The device has the following major blocks:
•
•
•
•
•
•
•
•
Preamplifier
PWM
Gate drive
Power FETs
Diagnostics
Protection
Power supply
I2C serial communication bus
Preamplifier
The preamplifier is a high-input-impedance, low-noise, low-offset-voltage input stage with adjustable gain. The
high input impedance allows the use of low-cost input capacitors while still achieving extended low-frequency
response. A dedicated, internally regulated supply powers the preamplifier, giving excellent noise immunity and
channel separation. Also included in the preamplifier are:
1. Mute Pop-and-Click Control—Application of a mute at the crest or trough of an audio input signal reshapes
and amplifies the signal as a step. Listeners perceive such a step as a loud click. The TAS5412-Q1 avoids
clicks by ramping the gain gradually on reception of a mute or play command. The start or stopping of
switching in a class-D amplifier can cause another form of click and pop. The TAS5412-Q1 incorporates a
patented method to reduce the pop energy during the switching start-up and shutdown sequences. Fault
conditions require rapid protection response by the TAS5412-Q1, which does not have time to ramp the gain
down in a pop-free manner. The device transitions into Hi-Z mode when an OV, UV, OC, OT, or dc fault is
encountered. Also, activation of the STANDBY pin may not be pop-free.
2. Gain Control—The four gain settings are set in the preamplifier via I2C control registers. Setting of the gain
outside of the global feedback resistors of the TAS5412-Q1 thus allows for stability in the system at all gain
settings with properly loaded conditions.
Pulse-Width Modulator (PWM)
The PWM converts the analog signal from the preamplifier into a switched signal of varying duty cycle. This is
the critical stage that defines the class-D architecture. In the TAS5412-Q1, the modulator is an advanced design
with high bandwidth, low noise, low distortion, excellent stability, and full 0–100% modulation capability. The
patented PWM uses clipping recovery circuitry to eliminate the deep saturation characteristic of PWMs when the
input signal exceeds the modulator waveform.
Gate Drive
The gate driver accepts the low-voltage PWM signal and level-shifts it to drive a high-current, full-bridge, power
FET stage.
Power FETs
The BTL output for each channel comprises four rugged N-channel FETs, each of which is low rDSon for high
efficiency and maximum power transfer to the load. These FETs handle large voltage transients during load
dump.
Copyright © 2013, Texas Instruments Incorporated
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TAS5412-Q1
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Load Diagnostics
The device incorporates load-diagnostic circuitry designed to help pinpoint the nature of output misconnections
during installation. The diagnostics include functions for detecting and determining the status of output
connections. The following diagnostics are supported:
•
•
•
•
•
Short to GND
Short to PVDD
Short across load
Open load
Tweeter detection
Reporting the presence of any of the short or open conditions to the system is via I2C register read. One can
read the tweeter detect status from the CLIP_OTW pin when properly configured.
1. Output Short and Open Diagnostics—The device contains circuitry designed to detect shorts and open
conditions on the outputs. One can only invoke the load diagnostic function when the output is in the Hi-Z
mode. There are four phases of test during load diagnostics and two levels of test. In the full level, all
channels must be in the Hi-Z state. The diagnostic tests all four phases on each channel, and both channels
at the same time. When fewer than two channels are in Hi-Z, the reduced level of test is the only available
option. In the reduced level, the only available tests are short to PVDD and short to GND. Load diagnostics
can occur at power up before the amplifier is moved out of Hi-Z mode. If the amplifier is already in play
mode, it must Mute and then Hi-Z to allow performing the load diagnostic. By performing the mute function,
the normal pop- and click-free transitions occur before the diagnostics begin. The device performs the
diagnostics as shown in Figure 10. Figure 11 shows the impedance ranges for the open-load and shorted-
load diagnostics. Reading of the diagnostic results is from the diagnostic register for each channel via I2C.
Hi-Z Channel Synchronization
Playback
/
Mute
Phase1
S2G
Phase2
S2P
Phase3
OL
Phase4
SL
OUT1_M
OUT1_P
~50 ms
~50 ms
~50 ms
~50 ms
~50 ms
~50 ms
~50 ms
~50 ms
VSpeaker
(OUT1_P – OUT1_M)
20 ms
20 ms
150 ms
200 ms
<20 ms
T0188-01
Figure 10. Load Diagnostics Sequence of Events
14
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ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
Short Detection
Range
Open Detection
Short Detected
Normal Load Detected
Open Detected
Range
RLoad
(Including Wires)
1300
1.5
300
0.5
1 (Typ)
800 (Typ)
M0067-01
Figure 11. Open- and Shorted-Load Detection
2. Tweeter Detection—Tweeter detection is an alternate operating mode used to determine the proper
connection of a frequency-dependent load (such as a speaker with a crossover). Invocation of tweeter
detection is via I2C, and both channels should be tested individually. Tweeter detection uses the average
cycle-by-cycle current-limit circuit (see the CBC section) to measure the current delivered to the load. The
proper implementation of this diagnostic function depends on the amplitude of a user-supplied test signal and
on the impedance-versus-frequency curve of the acoustic load. The system (external to the device) must
generate a signal to which the load responds. The user must calibrate the frequency and amplitude of this
signal to result in a current draw that is greater than the tweeter detection threshold when the load under test
is present, and less than the detection threshold if the load is not properly connected. The current level for
the tweeter detection threshold, as well as the maximum current that can safely be delivered to a load when
in tweeter-detection mode, is in the Electrical Characteristics section of the datasheet. The tweeter-detection
results are available on the CLIP_OTW pin during the application of the test signal. During tweeter-detection
activation (when the tested load is present), pulses on the CLIP_OTW pin begin to toggle. The pulses on the
CLIP_OTW pin report low whenever the current exceeds the detection threshold, and the pin remains low
until the current no longer exceeds the threshold. The minimum low-pulse period that one can expect is
equal to one period of the switching frequency. Having an input signal that increases the duration of detector
activation (for example, increasing the amplitude of the input signal) increases the amount of time for which
the
pin
reports
low.
NOTE: Because tweeter detection is an alternate operating mode, it is necessary to place the channels to be
tested in Play mode (via register 0x0C) after activation of tweeter detection in order to commence the
detection process. Additionally, the appropriate settings must be in register 0x0A, enabling the CLIP_OTW to
report the results of tweeter detection.
Protection and Monitoring
1. Cycle-By-Cycle Current Limit (CBC)—The CBC current-limiting circuit terminates each PWM pulse to limit
the output-current flow when current exceeds the average current-limit (ILIM) threshold. The overall effect on
the audio in the case of a current overload is quite similar to a voltage-clipping event, where the device
temporarily limits power at the peaks of the musical signal and normal operation continues without disruption
on removal of the overload. The TAS5412-Q1 does not prematurely shut down in this condition. Both
channels continue in play mode and pass signal.
2. Overcurrent Shutdown (OCSD)—Under severe short-circuit events, such as a short to PVDD or ground,
the device uses a peak-current detector, and the affected channel shuts down in 200 µs to 390 µs if the
conditions are severe enough. The shutdown speed depends on a number of factors, such as the impedance
of the short circuit, supply voltage, and switching frequency. Only the shorted channels shut down in such a
Copyright © 2013, Texas Instruments Incorporated
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TAS5412-Q1
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scenario. The user may restart the affected channel via I2C. An OCSD event activates the fault pin, with the
I2C fault register recording the affected channels. If the supply or ground short is strong enough to exceed
the peak current threshold but not severe enough to trigger the OCSD, the peak current limiter prevents
excess current from damaging the output FETs, and operation returns to normal after the short is removed.
3. DC Detect—This circuit detects a dc offset continuously during normal operation at the output of the
amplifier. If the dc offset reaches the level defined in the I2C registers for the specified time period, the circuit
triggers. By default, a dc detection event does not shut the output down. One can enable or disable the
shutdown function via I2C. If enabled, the triggered channel shuts down, but the others remain playing, and
the device asserts the FAULT pin. The I2C registers define the dc level.
4. Clip Detect—The clip-detect circuit alerts the user to the presence of a 100% duty-cycle PWM due to a
clipped waveform. When this occurs, the device passes to the CLIP_OTW pin a signal that remains asserted
until the 100% duty-cycle PWM signal is no longer present. Through I2C, one can change the CLIP_OTW
signal to clip-only, OTW-only, or both. A fourth mode, used only during diagnostics, is the option to report
detected tweeter-detection events on these pins (see the Tweeter Detection section). The microcontroller in
the system can monitor the signal at the CLIP_OTW pin. The microcontroller configuration may be such as to
reduce the volume on the channel in an active clipping-prevention circuit.
5. Overtemperature Warning (OTW), Overtemperature Shutdown (OTSD), and Thermal Foldback—The
device asserts the CLIP_OTW pin when the die temperature reaches 125°C. The OTW has three
temperature thresholds with a 10°C hysteresis. Indication of the thresholds is in I2C register 0x04 bits 5, 6,
and 7. The device still functions until the temperature reaches the OTSD threshold, 155°C, at which time it
places the outputs into Hi-Z mode and asserts the FAULT pin. I2C is still active in the event of an OTSD,
which allows reading the registers for faults, but all audio ceases abruptly. The OTSD resets at 145°C, to
allow the turning the TAS5412-Q1 back on through I2C. The OTW indication persists until the temperature
drops below 115°C. All temperatures are nominal values. The thermal foldback decreases the channel gain.
6. Undervoltage (UV) and Power-On Reset (POR)—The undervoltage (UV) protection detects low voltages
on PVDD, AVDD, and CP. In the event of an undervoltage, the device asserts the FAULT pin and updates
the I2C register for the voltage which caused the event. Power-on-reset (POR) occurs when PVDD drops low
enough. A POR event causes the I2C to go into a high-impedance state. After the device recovers from the
POR event, re-initialization of the device via I2C is necessary.
7. Overvoltage (OV) and Load Dump—The OV protection detects high voltages on PVDD. If PVDD reaches
the overvoltage threshold, the device asserts the FAULT pin and updates the I2C register. If the voltage
increases beyond the load dump threshold of 29 Vdc, the device shuts down and must undergo a restart
once the voltage returns to a safe value. After the device recovers from a load-dump event, the device
requires re-initialization via I2C. The TAS5412-Q1 can withstand 50-V load-dump voltage spikes. Load
Diagnostics shows the regions of operating voltage and the profile of the load-dump event.
Power Supply
A car battery that can have a large voltage swing most commonly provides the power for the device. PVDD is a
filtered battery voltage, and is the supply for the output FETS and the low-side FET gate driver. A charge pump
(CP) supply provides power to the high-side FET gate driver. The charge pump supplies the gate-drive voltages.
AVDD, which comes from an internal linear regulator, powers the analog circuitry. This supply requires a 0.1-µF,
10-V external bypass capacitor at the A_BYP pin. TI recommends attaching no external components except the
bypass capacitor to this pin. DVDD, which comes from an internal linear regulator, powers the digital circuitry.
The D_BYP pin requires a 0.1-µF, 10-V external bypass capacitor. TI recommends that no external components
except the bypass capacitor be attached to this pin.
The device can withstand fortuitous open-ground and -power conditions. Fortuitous open-ground usually occurs
when a speaker wire is shorted to ground, allowing for a second ground path through the body diode in the
output FETs. The uniqueness of the diagnostic capabilities allows debugging of the speakers and speaker wires,
eliminating the need to remove the amplifier to diagnose the problem.
I2C Serial Communication Bus
The device communicates with the system processor via the I2C serial communication bus. It is an I2C slave-only
device. The processor can poll the device via I2C to determine the operating status. Reporting of all fault
conditions and detections is via I2C. The setting of numerous features and operating conditions is also via I2C.
The I2C bus allows control of the following configurations:
•
Control the gain each channel independently. The gain settings are 12 dB, 20 dB, 26 dB, and 32 dB.
16
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TAS5412-Q1
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ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
•
•
•
•
•
•
•
Select AM non-interference switching frequency
Configure the CLIP_OTW pin
Enable or disable the dc-detect function with selectable threshold
Place channel in Hi-Z (switching stopped) mode (mute)
Select tweeter detect, set detect threshold, and initiate function
Initiate open- and shorted-load diagnostic
Reset faults and return to normal switching operation from Hi-Z mode (unmute)
In addition to the standard SDA and SCL pins for the I2C bus, the device includes a single pin that allows up to
four devices to work together in a system with no additional hardware required for communication or
synchronization. The I2C_ADDR pin sets the device in master or slave mode and selects the I2C address for that
device. Tie I2C_ADDR to DGND for master, to 1.2 Vdc for slave 1, to 2.4 Vdc for slave 2, and to D_BYP for
slave 3. The OSC_SYNC pin synchronizes the internal clock oscillators and thereby avoids beat frequencies.
Optional application of an external oscillator to this pin allows external control of the switching frequency.
Table 2. I2C_ADDR Pin Connection
DESCRIPTION
I2C_ADDR PIN CONNECTION
I2C ADDRESS
0xD8/D9
Device 0 - OSC_SYNC clock master To SGND pin
(1)
(1)
Device 1 - OSC_SYNC clock slave 1 35% DVDD (resistive voltage divider between D_BYP pin and SGND pin)
Device 2 - OSC_SYNC clock slave 2 65% DVDD (resistive voltage divider between D_BYP pin and SGND pin)
Device 3 - OSC_SYNC clock slave 3 To D_BYP pin
0xDA/DB
0xDC/DD
0xDE/DF
(1) RCSwith 5% or better tolerance is recommended.
I2C Bus Protocol
The device has a bidirectional serial control interface that is compatible with the Inter IC (I2C) bus protocol and
supports 400-kbps data transfer rates for random and sequential write and read operations. This is a slave-only
device that does not support a multimaster bus environment or wait-state insertion. Use the control interface to
program the registers of the device and to read device status.
The I2C bus employs two signals, SDA (data) and SCL (clock), to communicate between integrated circuits in a
system. Data transfer on the bus is serial, one bit at a time. The address and data transfers are in byte (8-bit)
format with the most-significant bit (MSB) transferred first. In addition, the receiving device acknowledges each
byte transferred on the bus with an acknowledge bit. Each transfer operation begins with the master device
driving a start condition on the bus and ends with the master device driving a stop condition on the bus. The bus
uses transitions on the data terminal (SDA) while the clock is HIGH to indicate start and stop conditions. A HIGH-
to-LOW transition on SDA indicates a start, and a LOW-to-HIGH transition indicates a stop. Normal data bit
transitions must occur within the low time of the clock period. Figure 12 shows these conditions. The master
generates the 7-bit slave address and the read/write bit to open communication with another device and then
wait for an acknowledge condition. The device holds SDA LOW during the acknowledge-clock period to indicate
an acknowledgement. When this occurs, the master transmits the next byte of the sequence. Addressing of each
device is by a unique 7-bit slave address plus read/write bit (1 byte). All compatible devices share the same
signals via a bidirectional bus using a wired-AND connection. There must be an external pullup resistor for the
SDA and SCL signals to set the HIGH level for the bus. There is no limit on the number of bytes comprising a
transmission between start and stop conditions. When the last word transfers, the master generates a stop
condition to release the bus.
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TAS5412-Q1
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8-Bit Register Data For
Address (N)
8-Bit Register Data For
Address (N)
R/
W
8-Bit Register Address (N)
7-Bit Slave Address
A
A
A
A
SDA
SCL
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Start
Stop
T0035-01
Figure 12. Typical I2C Sequence
Use the CS pin (pin 62) to program the device for one of four addresses. These four addresses are licensed I2C
addresses and do not conflict with other licensed I2C audio devices. To communicate with the device, the I2C
master uses addresses shown in Table 2. Read and write data transmissions can use single-byte or multiple-
byte data transfers.
Random Write
As shown in Figure 13, a single-byte data-write transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. The read/write bit determines the direction of
the data transfer. For a write data transfer, the read/write bit is a 0. After receiving the correct I2C device address
and the read/write bit, the device responds with an acknowledge bit. Next, the master transmits the address byte
or bytes corresponding to the internal memory address being accessed. After receiving the address byte, the
device again responds with an acknowledge bit. Next, the master device transmits the data byte to be written to
the memory address being accessed. After receiving the data byte, the device again responds with an
acknowledge bit. Finally, the master device transmits a stop condition to complete the single-byte data-write
transfer.
Start
Condition
Acknowledge
Acknowledge
Acknowledge
R/W
A6 A5 A4 A3 A2 A1 A0
ACK A7 A6 A5 A4 A3 A2 A1 A0 ACK D7 D6 D5 D4 D3 D2 D1 D0 ACK
I2C Device Address and
Read/Write Bit
Subaddress
Data Byte
Stop
Condition
T0036-01
Figure 13. Random Write Transfer
Sequential Write
A sequential data-write transfer is identical to a single-byte data-write transfer except that the master transmits multiple data
bytes to the device as shown in Figure 14. After receiving each data byte, the device responds with an acknowledge bit, and
the I2C subaddress automatically increments by one.
Start
Condition
Acknowledge
Acknowledge
Acknowledge
D0 ACK D7
Acknowledge
D0 ACK D7
Acknowledge
D0 ACK
A6 A5
A1 A0 R/W ACK A7 A6 A5 A4 A3
A1 A0 ACK D7
I2C Device Address and
Read/Write Bit
Subaddress
First Data Byte
Last Data Byte
Stop
Condition
Other Data Bytes
T0036-02
Figure 14. Sequential Write Transfer
18
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A sequential data-write transfer is identical to a single-byte data-write transfer except that the master transmits multiple data
bytes to the device as shown in Figure 14. After receiving each data byte, the device responds with an acknowledge bit, and
the I2C subaddress automatically increments by one.
Random Read
As shown in Figure 15, a single-byte data-read transfer begins with the master device transmitting a start
condition followed by the I2C device address and the read/write bit. The data-read transfer actually performs a
write followed by a read. Initially, a write transfers the address byte or bytes of the internal memory address to be
read. As a result, the read/write bit is a 0. After receiving the address and the read/write bit, the device responds
with an acknowledge bit. In addition, after sending the internal memory address byte or bytes, the master device
transmits another start condition followed by the device address and the read/write bit again. This time the
read/write bit is a 1, indicating a read transfer. After receiving the address and the read/write bit, the device again
responds with an acknowledge bit. Next, the device transmits the data byte from the memory address being
read. After receiving the data byte, the master transmits a not-acknowledge followed by a stop condition to
complete the single-byte data-read transfer.
Repeat Start
Condition
Not
Acknowledge
Start
Condition
Acknowledge
Acknowledge
A0 ACK
Acknowledge
A6 A5
A1 A0 R/W ACK A7 A6 A5 A4
A6 A5
A1 A0 R/W ACK D7 D6
D1 D0 ACK
I2C Device Address and
Read/Write Bit
Subaddress
I2C Device Address and
Read/Write Bit
Data Byte
Stop
Condition
T0036-03
Figure 15. Random Read Transfer
Sequential Read
A sequential data-read transfer is identical to a single-byte data-read transfer except that the device transmits
multiple data bytes to the master as shown in Figure 16. Except for the last data byte, the master responds with
an acknowledge bit after receiving each data byte and automatically increments the I2C subaddress by one.
Note: The fault registers do not have sequential read capabilities.
Repeat Start
Condition
Not
Acknowledge
Start
Condition
Acknowledge
Acknowledge
Acknowledge
Acknowledge
Acknowledge
D0 ACK D7
A6
A0 R/W ACK A7 A6 A5
A0 ACK
A6
A0 R/W ACK D7
D0 ACK D7
D0 ACK
I2C Device Address and
Read/Write Bit
Subaddress
I2C Device Address and First Data Byte
Read/Write Bit
Other Data Bytes
Last Data Byte
Stop
Condition
T0036-04
Figure 16. Sequential Read Transfer
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A sequential data-write transfer is identical to a single-byte data-write transfer except that the master transmits multiple data
bytes to the device as shown in Figure 14. After receiving each data byte, the device responds with an acknowledge bit, and
the I2C subaddress automatically increments by one.
Table 3. TAS5412-Q1 I2C Addresses
SELECTABLE WITH
ADDRESS PIN
READ/WRITE
BIT
I2C
ADDRESS
FIXED ADDRESS
DESCRIPTION
I2C WRITE
MSB
6
1
1
1
1
1
1
1
1
5
0
0
0
0
0
0
0
0
4
1
1
1
1
1
1
1
1
3
1
1
1
1
1
1
1
1
2
0
0
0
0
1
1
1
1
1
0
0
1
1
0
0
1
1
LSB
0
0 – OSC MASTER
1 – OSC SLAVE1
2 – OSC SLAVE2
3 – OSC SLAVE3
1
1
1
1
1
1
1
1
0xD8
0xD9
0xDA
0xDB
0xDC
0xDD
0xDE
0xDF
I2C READ
I2C WRITE
I2C READ
I2C WRITE
I2C READ
I2C WRITE
I2C READ
1
0
1
0
1
0
1
Table 4. I2C Address Register Definitions
ADDRESS
0x00
0x01
0x02
0x03
0x04
0x05
0x06
0x07
0x08
0x09
0x0A
0x0B
0x0C
0x0D
0x0E
0x0F
0x10
0x13
TYPE
Read
REGISTER DESCRIPTION
Latched fault register 1, global and channel fault
Latched fault register 2, dc offset and overcurrent detect
Latched diagnostic register 1, load diagnostics, channel 1
Latched diagnostic register 2, load diagnostics, channel 2
External status register 1, temperature and voltage detect
External status register 2, Hi-Z and low-low state
External status register 3, mute and play modes
External status register 4, load diagnostics
External control register 1, channel gain select
Not used
Read
Read
Read
Read
Read
Read
Read
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read, Write
Read
External control register 2, switching frequency and clip pin select
External control register 3, load diagnostic, master mode select
External control register 4, output state control
External control register 5, output state control
Not used
Not used
External control register 6, dc detect threshold selection
External status register 5, overtemperature shutdown and thermal foldback
Table 5. Fault Register 1 (0x00) Protection
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
No protection-created faults, default value
Overtemperature warning has occurred
DC offset has occurred in any channel
Overcurrent shutdown has occurred in any channel
Overtemperature shutdown has occurred
Charge-pump undervoltage has occurred
AVDD, analog voltage, undervoltage has occurred
PVDD undervoltage has occurred
–
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
–
PVDD overvoltage has occurred
20
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
Table 6. Fault Register 2 (0x01) Protection
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
No protection-created faults, default value
Ovecurrent shutdown channel 1 has occurred
Overcurrent shutdown channel 2 has occurred
DC offset channel 1 has occurred
DC offset channel 2 has occurred
Reserved
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
X
–
–
X
X
–
–
X
Table 7. Diagnostic Register 1 (0x02) Load Diagnostics
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
No load-diagnostic-created faults, default value
Output short to ground channel 1 has occurred
Output short to PVDD channel 1 has occurred
Shorted load channel 1 has occurred
Open load channel 1 has occurred
Reserved
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
–
–
–
X
X
X
X
Table 8. Diagnostic Register 2(0x03) Load Diagnostics
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
No load-diagnostic-created faults, default value
Output short to ground channel 2 has occurred
Output short to PVDD channel 2 has occurred
Shorted load channel 2 has occurred
Open load channel 2 has occurred
Reserved
–
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
X
X
X
X
–
–
–
–
Table 9. External Status Register 1 (0x04) Fault Detection
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
No protection-created faults are present, default value
PVDD overvoltage fault is present
PVDD undervoltage fault is present
AVDD, analog voltage fault is present
Charge-pump voltage fault is present
Overtemperature shutdown is present
Overtemperature warning
–
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
1
1
–
–
–
–
–
Overtemperature warning level 1
1
0
1
–
–
–
–
–
Overtemperature warning level 2
1
1
1
–
–
–
–
–
Overtemperature warning level 3
Table 10. External Status Register 2 (0x05) Output State of Individual Channels
D7
0
D6
0
D5
0
D4
0
D3
0
D2
1
D1
1
D0
0
FUNCTION
Output is in Hi-Z mode, not in low-low mode (1), default value
Channel 1 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)
Channel 2 Hi-Z mode (0 = not Hi-Z, 1 = Hi-Z)
–
–
–
–
–
–
0
–
–
–
–
–
–
0
–
–
(1)
–
–
1
–
–
–
–
–
Channel 1 low-low mode (0 = not low-low, 1 = low-low)
–
1
–
–
–
–
–
–
Channel 2 low-low mode (0 = not low-low, 1 = low-low) (1)
X
–
–
X
X
–
–
X
Reserved
(1) Low-low is defined as both outputs actively pulled to ground.
Copyright © 2013, Texas Instruments Incorporated
21
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
Table 11. External Status Register 3 (0x06) Play and Mute Modes
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
Mute mode is disabled, play mode disabled, default value, (Hi-Z mode)
Channel 1 is in play mode.
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
Channel 2 is in play mode.
–
–
1
–
–
–
–
–
Channel 1 is in mute mode.
–
1
–
–
–
–
–
–
Channel 2 is in mute mode.
X
–
–
X
X
–
–
X
Reserved
Table 12. External Status Register 4 (0x07) Load Diagnostics
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
No channels are set in load diagnostics mode, default value
Channel 1 is in load diagnostics mode.
Channel 2 is in load diagnostics mode.
Channel 1 is in overtemperature foldback.
Channel 2 is in overtemperature foldback.
Reserved
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
–
–
–
X
–
–
X
X
–
–
X
Table 13. External Control Register 1 (0x08) Gain Select
D7
1
D6
0
D5
1
D4
0
D3
1
D2
0
D1
1
D0
0
FUNCTION
Set gain for both channels to 26 dB, default value
Set channel 1 gain to 12 dB
Set channel 1 gain to 20 dB
Set channel 1 gain to 32 dB
Set channel 2 gain to 12 dB
Set channel 2 gain to 20 dB
Set channel 2 gain to 32 dB
Reserved
–
–
–
–
0
0
–
–
–
–
–
–
0
1
–
–
–
–
–
–
1
1
–
–
–
–
0
0
–
–
–
–
–
–
0
1
–
–
–
–
–
–
1
1
–
–
–
–
X
X
–
–
–
–
X
X
Table 14. External Control Register 2 (0x0A) Switching Frequency Select and Clip_OTW Configuration
D7
D6
D5
D4
D3
D2
D1
D0
FUNCTION
0
0
0
0
1
1
0
1
Set f S = 417 kHz, configure clip and OTW detection, 45° phase, disable
hard stop
–
–
–
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
1
–
–
–
–
–
–
–
–
1
–
–
–
–
–
–
0
0
1
–
–
–
–
–
–
–
0
1
0
–
–
–
–
0
1
1
–
–
–
–
–
–
–
0
0
1
–
–
–
–
–
–
–
Set f S = 500 kHz
Set f S = 357 kHz
Invalid frequency selection (do not set)
Configure CLIP_OTW pin for tweeter detect only
Configure CLIP_OTW pin for clip detect only
Configure CLIP_OTW pin for overtemperature warning only
Enable hard-stop mode
Set fS to a 180° phase difference between adjacent channels
Send sync pulse from OSC_SYNC pin (device must be in master mode).
Report thermal foldback to the CLIP_OTW pin.
Table 15. External Control Register 3 (0x0B) Load Diagnostics and Master-or-Slave Control
D7
0
D6
1
D5
0
D4
1
D3
0
D2
0
D1
0
D0
0
FUNCTION
Disable load diagnostics, enable dc-detect SD, master mode
Enable channel 1, load diagnostics
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
Enable channel 2, load diagnostics
22
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
Table 15. External Control Register 3 (0x0B) Load Diagnostics and Master-or-Slave Control (continued)
D7
–
D6
–
D5
–
D4
–
D3
X
–
D2
–
D1
–
D0
X
–
FUNCTION
Reserved
–
–
–
0
–
–
Disable dc detect shutdown on all channels
–
–
1
–
–
–
–
–
Enable tweeter-detect mode
–
0
–
–
–
–
–
–
Enable slave mode (provide external oscillator)
Send clock, OSC_SYNC pin has clock output (valid only in master mode)
1
–
–
–
–
–
–
–
Table 16. External Control Register 4 (0x0C) Output Control
D7
0
D6
0
D5
0
D4
1
D3
1
D2
1
D1
1
D0
1
FUNCTION
All channels, Hi-Z, mute, reset disabled
–
–
–
–
–
–
0
–
Set channel 1 to mute mode, non-Hi-Z
Set channel 2 to mute mode, non-Hi-Z
Reserved
–
–
–
–
–
0
–
–
–
X
–
X
–
–
X
–
–
–
X
–
–
0
–
–
Set non-Hi-Z channels to play mode, (unmute)
Reset device
1
–
–
–
–
–
–
–
Table 17. External Control Register 5 (0x0D) Output Control
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
Low-low state disabled, both channels
–
–
–
–
–
–
1
–
Set channel 1 to low-low state
Set channel 2 to low-low state
Reserved
–
–
–
–
–
1
–
–
X
X
X
X
X
–
–
X
Table 18. External Control Register 6 (0x10) DC Detect Threshold Selection
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
1
FUNCTION
Default dc detect value (1.6 V)
–
–
–
–
–
–
0
0
Minimum dc detect value (0.8 V)
–
–
–
–
–
–
1
0
Maximum dc detect value (2.4 V) Note: a value of 11 is invalid
Enable enhanced-crosstalk mode
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
–
Add a 20-ms delay between load diagnostic phases
4× longer short-to-power (S2P) and short-to-ground (S2G) phases
Slower common mode (CM) ramp-down from mute mode
Reserved
–
–
–
1
–
–
–
–
1
–
–
–
–
–
–
–
–
X
X
–
–
–
–
–
Table 19. External Status Register 5 (0x13) Overtemperature and Thermal Foldback Status
D7
0
D6
0
D5
0
D4
0
D3
0
D2
0
D1
0
D0
0
FUNCTION
Default overtemperature foldback status, no channel is in foldback
Channel 1 in thermal foldback
–
–
–
–
–
–
1
–
–
–
–
–
–
1
–
–
Channel 2 in thermal foldback
–
–
1
–
–
–
–
–
Channel 1 in overtemperature shutdown
Channel 2 in overtemperature shutdown
Reserved
–
1
–
–
–
–
–
–
X
–
–
X
X
–
–
X
Copyright © 2013, Texas Instruments Incorporated
23
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
Hardware Control Pins
The device has several hardware pins for real-time control and indication of device status.
FAULT pin: This active-low, open-drain output pin indicates the presence of a fault condition that requires
the device to go automatically into the Hi-Z mode or standby mode. When asserting this pin high, the device
is protecting itself and the system from potential damage. One can read the exact nature of the fault via I2C,
with the exception of faults that are the result of PVDD voltage excursions below POR. In this case, the
device goes into standby mode and the I2C bus is no longer operational. However, the fault indication
remains, due to the fact that the FAULT pin is open-drain and active-high.
CLIP_OTW pin: The function of this active-low pin, configured by the user, indicates one of the following
conditions: overtemperature warning, the detection of clipping, or the logical OR of both of these conditions.
Selection of the configuration is via I2C. During tweeter-detect diagnostics, detection of a tweeter also results
in assertion of this pin.
MUTE pin: This active-low pin is for hardware control of the mute-and-unmute function for all four channels.
Capacitor CMUTE controls the time constant for the gain ramp needed to produce a pop- and click-free mute
function. For pop- and click-free operation, implement the mute function through I2C commands. The use of a
hard mute with an external transistor does not ensure pop- and click-free operation; TI does not recommend
such use unless there is a requirement for an emergency hard mute function in case of a loss of I2C control.
Do not share the CMUTE capacitor between more than one device.
STANDBY pin: Asserting this active-low pin puts the device into a complete shutdown, limiting the current
draw to 2 µA, typical. Assertion typically occurs when the car ignition is in the off position. Another use of the
pin is to shut down the device rapidly on violation of certain operating conditions. Pin assertion causes the
loss of all I2C register content and causes the I2C bus to go into the high-impedance state.
EMI Considerations
Automotive-level EMI performance depends on both careful integrated-circuit design and good system-level
design. Controlling sources of electromagnetic interference (EMI) is a major consideration in all aspects of the
TAS5412-Q1 design.
The TAS5412-Q1 has minimal parasitic inductances due to the short leads on the PHD package. This
dramatically reduces the EMI that results from current passing from the die to the system PCB. Each channel of
the TAS5412-Q1 also operates at a different phase. The phase between channels is I2C selectable to either 45°
or 180°, to reduce EMI caused by high-current switching. The TAS5412-Q1 incorporates patent-pending circuitry
that optimizes output transitions that cause EMI.
AM Radio EMI Reduction
To reduce interference in the AM radio band, the TAS5412-Q1 has the ability to change the switching frequency
via I2C commands. Table 20 lists the recommended frequencies. The fundamental frequency and its second
harmonic straddle the AM radio band listed. This eliminates the tones that can be present due to the switching
frequency being demodulated by the AM radio. To function properly, AM avoidance requires the use of a 20-kΩ,
1% tolerance Rext resistor.
Table 20. Recommended Switching Frequencies for AM Mode Operation
US
EUROPEAN
SWITCHING
FREQUENCY
(kHz)
SWITCHING
FREQUENCY
(kHz)
AM FREQUENCY
(kHz)
AM FREQUENCY
(kHz)
522-540
540–914
417
500
417
500
417
357
540–917
917–1125
1125–1375
1375–1547
1547–1700
500
417
500
417
357
914–1122
1122–1373
1373–1548
1548–1701
24
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
Operating States
the following tables depict the operating regions, or states, of the TAS5412-Q1.
Table 21. Operating States and Supplies
STATE NAME
STANDBY
Hi-Z
OUTPUT FETS
Hi-Z, floating
CHARGE PUMP
Stopped
Active
OSCILLATOR
Stopped
Active
I2C
AVDD and DVDD
Stopped
Active
Active
Active
OFF
ON
ON
ON
Hi-Z, weak pulldown
Switching at 50%
Switching with audio
Mute
Active
Active
Normal operation
Active
Active
Table 22. Global Faults and Actions
FAULT OR
EVENT
CATEGORY
LATCHED/
SELF-
CLEARING
FAULT OR
EVENT
MONITORING
REPORTING
METHOD
ACTION
TYPE
ACTION
RESULT
MODES
POR
Voltage fault
All
FAULT pin
I2C + FAULT pin
Hard mute (no ramp)
Standby
Hi-Z
Self-clearing
Latched
Undervoltage
Overvoltage
Hi-Z, mute, normal
Overtemperatu Thermal warning
re warning
Hi-Z, mute, normal
Hi-Z, mute, normal
I2C + OTW pin
None
None
Self-clearing
Latched
Overtemperatu
re shutdown
Thermal fault
I2C + FAULT pin
Hard mute (no ramp)
Standby
Table 23. Channel Faults and Actions
LATCHED or
SELF-
CLEARING
FAULT OR
EVENT
FAULT OR EVENT
CATEGORY
MONITORING
MODES
REPORTING
METHOD
ACTION
TYPE
ACTION
RESULT
Open/short
diagnostic
Diagnostic
Hi-Z (I2C activated)
I2C
None
None
Latched
Output clipping
Warning
Mute or play
CLIP_OTW pin
None
None
Self-clearing
Self-clearing
CBC load current
limit
Online protection
Current limit
Start OC
timer
OC fault
DC detect
OT foldback
Output channel fault
Warning
I2C + FAULT pin
I2C + OTW pin
Hard mute
Hard mute
Current limit
Hi-Z
Hi-Z
Latched
Latched
None
Self-clearing
Power Shutdown and Restart Sequence Control
The gain ramp of the filtered output signal and the updating of the I2C registers correspond to the MUTE pin
voltage during the ramping process. The value of the external capacitor on the MUTE pin dictates the length of
time that the MUTE pin takes to complete its ramp.
Copyright © 2013, Texas Instruments Incorporated
25
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
tCM
tCM
tGAIN
tGAIN
HIZ_Report_x
(All Channels)
LOW_LOW_Report_x
(All Channels)
MUTE_Report_x
(All Channels)
PLAY_Report_x
MUTE Pin
OUTx_P (Filtered)
(All Channels)
OUTx_M (Filtered)
(All Channels)
T0192-02
Figure 17. Click- and Pop-Free Shutdown and Restart Sequence Timing Diagram
With Two Channels Sharing the Mute Pin
26
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
tCM
tCM
tGAIN
tGAIN
HIZ_Report_1
HIZ_Report_2,3,4
LOW_LOW_Report_1
LOW_LOW_
Report_2,3,4
MUTE_Report
MUTE Pin
Pop
Pop
OUT1_P
(Filtered)
OUT2,3,4_P
(Filtered)
T0193-02
Figure 18. Individual Channel Shutdown and Restart Sequence Timing Diagram
Copyright © 2013, Texas Instruments Incorporated
27
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
Latched-Fault Shutdown and Restart Sequence Control
tI2C_CL
tDEGLITCH
tCM
tDEGLITCH
tGAIN
PVDD Normal Operating Region
PVDD UV Hysteresis Region
UV
Detect
UV
Reset
PVDD
VUV + VUV_HY
VUV
VPOR
HIZ_x
Internal I2C Write
MUTE_Report
UV_DET
Cleared by
External I2C Read
External I2C Read
to Fault Register 1
UV_LATCH
FAULT Pin
MUTE Pin
Pop
OUTx_P (Filtered)
T0194-02
Figure 19. Latched Global-Fault Shutdown and Restart Timing Diagram
(UV Shutdown and Recovery)
28
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
tI2C_CL
tDEGLITCH
tCM
tDEGLITCH
tGAIN
PVDD Normal Operating Region
PVDD UV Hysteresis Region
UV
Detect
UV
Reset
PVDD
VUV + VUV_HY
VUV
VPOR
Internal I2C Write
HIZ_Report_1
HIZ_Report_2,3,4
MUTE_Report
UV_DET
Cleared by
External I2C Read
External I2C Read
to Fault Register 1
UV_LATCH
FAULT Pin
MUTE Pin
Pop
Pop
Pop
OUT1_P (Filtered)
OUT2,3,4_P (Filtered)
T0195-02
Figure 20. Latched Global-Fault Shutdown and Individual-Channel Restart Timing Diagram
(UV Shutdown and Recovery)
Copyright © 2013, Texas Instruments Incorporated
29
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
APPLICATION INFORMATION
Figure 21. TAS5412-Q1 Typical Application Schematic
30
Copyright © 2013, Texas Instruments Incorporated
TAS5412-Q1
www.ti.com.cn
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
Parallel Operation (PBTL)
One can parallel the device outputs on the load side of the LC output filter. Parallel operation requires identical
I2C settings for any paralleled channels in order to have reliable system performance and evenly dissipated
power on multiple channels. Having identical gain and current-limit settings can also prevent energy feeding back
from one channel to the other. For smooth power up, power down, and mute operation, send the same control
commands (such as mute, play, Hi-Z, etc.) to the paralleled channels at the same time. The device also supports
load diagnostics for parallel connection. There is no support for paralleling on the device side of the LC output
filter, and device failure can result.
Input Filter Design
For the TAS5412-Q1, the IN_M pin should have an impedance to GND that is equivalent to the parallel
combination of the input impedances of all IN_P channels combined, including any source impedance from the
previous stage in the system design. For example, if each of the two IN_P channels has a 1-µF dc blocking
capacitor, 1 kΩ of series resistance due to an input RC filter, and 1 kΩ of source resistance from the DAC
supplying the audio signal, the IN_M channel should have a 2-µF capacitor in series with a 1-kΩ resistor to GND
(2 × 1 µF in parellel = 2 µF; 2 × 2 kΩ in parallel = 1 kΩ).
Demodulation Filter Design
High-current LDMOS transistors in an H-bridge configuration drive the amplifier outputs. These transistors are
either off or on. The result is a square-wave output signal with a duty cycle that is proportional to the amplitude of
the audio signal. TI recommends the use of a second-order LC filter to recover the audio signal. The main
purpose of the demodulation filter is to attenuate the high-frequency components of the output signals that are
out of the audio band. Design of the demodulation filter significantly affects the audio performance of the power
amplifier. Therefore, to meet the device THD+N specification, carefully consider the selection of the inductors
used in the output filter. The rule is that the inductance should remain stable within the range of peak current
seen at maximum output power and deliver approximately 5 µH of inductance at 16 A. If this rule is observed, the
device should not have distortion issues due to the output inductors. Another parameter to be considered is the
idle-current loss in the inductor. This can be measured or specified as inductor dissipation (D). The target
specification for dissipation is less than 0.05. If the dissipation factor is above this value, idle current increases. In
general, 10-µH inductors suffice for most applications. The change in output load resistance slightly alters the
frequency response of the amplifier; however, unless tight control of frequency response is necessary (better
than 0.5 dB), it is not necessary to deviate from 10 µH.
Line-Driver Applications
In many automotive audio applications, the end user would like to use the same head unit to drive either a
speaker (with several ohms of impedance) or an external amplifier (with several kilohms of impedance). The
device is capable of supporting both applications. However, the output filter must be sized appropriately to
handle the expected output load in either case (that is, one must populate different output-filter values to handle
the two different cases).
Thermal Information
The thermally augmented package interfaces directly to a heat sink using a thermal interface compound (for
example, Arctic Silver® Ceramique™ thermal compound.) The heat sink then absorbs heat from the IC and
couples it to the local air. With proper thermal managerment this process can reach equilibrium and heat can be
continually removed from the ICs. Because of the efficiency of the TAS5412-Q1, heat sinks can be smaller than
those required for linear amplifiers of equivalent performance.
RθJAis a system thermal resistance from junction to ambient air. As such, it is a system parameter with the
following components:
•
•
•
RθJC (the thermal resistance from junction to case, or in this case the heat slug)
Thermal resistance of the thermal grease
Heat-sink thermal resistance
One can calculate the thermal resistance of the thermal grease from the exposed heat slug area and the thermal
grease manufacturer's area thermal resistance (expressed in °C-in2/W or °C-mm2/W). The area thermal
resistance of the example thermal grease with a 0.001 inch (0.0254 mm) thick layer is about 0.007°C-in2/W
(4.52°C-mm2/W). The approximate exposed heat slug size is as follows:
Copyright © 2013, Texas Instruments Incorporated
31
TAS5412-Q1
ZHCSBP3A –AUGUST 2013–REVISED OCTOBER 2013
www.ti.com.cn
TAS5412-Q1, 64-pin PHD………..
0.099 in2(64 mm2)
Dividing the example thermal grease area resistance by the area of the heat slug gives the actual resistance
through the thermal grease for both parts:
TAS5412-Q1, 64-pin PHD………..
0.07 °C/W
The thermal resistance of thermal pads is generally considerably higher than a thin layer of thermal grease.
Because of its even-higher thermal resistance, do not use thermal tape at all. The heat sink vendor generally
predicts heat-sink thermal resistance, modeled using a continuous-flow-dynamics (CFD) model, or measured.
Thus, for a single monaural channel in the IC, the system RθJA= RθJC+ thermal-grease resistance + heat-sink
resistance.
The following table indicates modeled parameters for one TAS5412-Q1 IC on a heat sink. The junction
temperature is set at 115°C in both cases, while delivering 20 Wrms per channel into 4-Ω loads with no clipping.
Assume that the thermal grease is about 0.001 inches (0.0254 mm) thick.
Device
Ambient temperature
TAS5412-Q1, 64-Pin PHD
25°C
Power to load
20 W × 2
1.90 W × 2
6.46°C
Power dissipation
ΔT inside package
ΔT through thermal grease
Required heatsink thermal resistance
Junction temperature
System RθJA
0.27°C
21.91°C/W
115°C
23.68°C/W
90°C
RθJA × power dissipation
Electrical Connection of Heat Slug and Heat Sink
Connect electrically to ground or leave floating any heat sink that connects to the heat slug of the device. Never
connect the heat slug to any electrical node other than GND.
SPACER
SPACER
REVISION HISTORY
Changes from Revision Original (August 2013) to Revision A
Page
•
将数据表从产品预览更改为生成数据 .................................................................................................................................... 1
32
Copyright © 2013, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TAS5412TPHDRQ1
ACTIVE
HTQFP
PHD
64
1000 RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 105
TAS5412TQ1
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Oct-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TAS5412TPHDRQ1
HTQFP
PHD
64
1000
330.0
24.4
17.0
17.0
1.5
20.0
24.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Oct-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
HTQFP PHD 64
SPQ
Length (mm) Width (mm) Height (mm)
350.0 350.0 43.0
TAS5412TPHDRQ1
1000
Pack Materials-Page 2
GENERIC PACKAGE VIEW
PHD 64
14 x 14, 0.8 mm pitch
HTQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224851/B
www.ti.com
PACKAGE OUTLINE
HTQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK
PHD0064B
14.05
13.95
NOTE 3
B
PIN 1
INDEX AREA
8.00
6.68
64
49
48
1
THERMAL PAD
NOTE 4
14.05
8.00
16.15
15.85
TYP
13.95
6.68
NOTE 3
16
33
32
17
0.40
0.30
C
A
64 X
0.2
60 X 0.8
4 X 12
A B
SEE DETAIL A
C
1.2 MAX
SEATING PLANE
(0.127) TYP
17
32
16
33
0.25
GAGE PLANE
1.05
0.95
0°-7°
0.15
0.05
0.75
0.45
0.1 C
DETAIL A
TYPICAL
1
48
49
64
4224850/B 05/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed
0.15 per side.
4. See technical brief. PowerPad Thermally Enhanced Package, Texas Instruments Literature No. SLMA002
(www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004) for information regarding recommended board layout.
www.ti.com
EXAMPLE BOARD LAYOUT
HTQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK
PHD0064B
SYMM
49
64
64 X (1.5)
1
48
64 X (0.55)
60 X (0.8)
SYMM
(15.4)
33
16
(R0.05) TYP
32
17
(15.4)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 6X
0.05 MAX
0.05 MIN
ALL AROUND
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED
METAL
EXPOSED
METAL
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4224850/B 05/2022
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
7. Vias are optional depending on application, refer to device data sheet. It is recommended that vias under paste be filled, plugged
or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
HTQFP - 1.2 mm max height
PLASTIC QUAD FLATPACK
PHD0064B
SYMM
49
64
64 X (1.5)
1
48
64 X (0.55)
60 X (0.8)
SYMM
(15.4)
33
16
(R0.05) TYP
32
17
(15.4)
SOLDER PASTE EXAMPLE
SCALE: 6X
4224850/B 05/2022
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
www.ti.com
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