THS770006_14 [TI]

Broadband, Fully-Differential, 14-/16-Bit ADC DRIVER AMPLIFIER;
THS770006_14
型号: THS770006_14
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

Broadband, Fully-Differential, 14-/16-Bit ADC DRIVER AMPLIFIER

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THS770006  
www.ti.com  
SBOS520 JULY 2010  
Broadband, Fully-Differential, 14-/16-Bit  
ADC DRIVER AMPLIFIER  
Check for Samples: THS770006  
1
FEATURES  
DESCRIPTION  
23  
2.4GHz Bandwidth  
The THS770006 is a fixed-gain of +6dB, wideband,  
fully-differential amplifier designed and optimized  
specifically for driving 16-bit analog-to-digital  
converters (ADCs) at input frequencies up to  
130MHz, and 14-bit ADCs at input frequencies up to  
200MHz. This device provides high bandwidth,  
high-voltage output with low distortion and low noise,  
critical in high-speed data acquisition systems that  
require very high dynamic range, such as wireless  
base stations and test and measurement  
applications. This device also makes an excellent  
differential amplifier for general-purpose, high-speed  
differential signal chain and short line driver  
applications.  
3100V/µs Slew Rate, VOUT =2V step  
Fixed Voltage Gain: +6dB  
IMD3: –107dBc, VOUT = 2VPP, RL = 400Ω,  
f = 100MHz  
OIP3: 48dBm, f = 100MHz  
Noise Figure: 11dB, f = 100MHz  
APPLICATIONS  
14/16-bit ADC Driver  
ADC Driver for Wireless Base Station Signal  
Chains: GSM, WCDMA, MC-GSM  
ADC Driver for High Dynamic Range Test and  
Measurement Equipment  
The THS7700 operates on a nominal +5V single  
supply, offers very fast, 7.5ns maximum recovery  
time from overdrive conditions, and has  
power-down mode for power saving. The THS770006  
is offered in a Pb-free (RoHS compliant) and green,  
a
THS770006 Driving ADS5493  
100W  
QFN-24  
thermally-enhanced  
package.  
It  
is  
characterized for operation over the industrial  
temperature range of –40°C to +85°C.  
RO  
50W  
AIN+  
VIN-  
VIN+  
30MHz  
Bandpass  
Filter  
VOCM  
ADS5493  
AIN-  
RO  
50W  
RELATED DEVICES  
100W  
VOCM  
DEVICE  
DESCRIPTION  
THS770006  
Wideband, low-noise, low-distortion,  
fully-differential amplifier  
THS4509  
Wideband, low-noise, low-distortion,  
fully-differential, digitally-programmable  
gain amplifier  
FFT Plot with Two-Tone Input at 96MHz and  
PGA870  
100MHz (see Application Information section).  
10  
0
ADS5481 to  
ADS5485  
16-bit, 80MSPS to 200MSPS ADCs  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
130  
140  
ADS5493  
ADS6145  
ADS6149  
16-bit, 130MSPS ADC  
14-bit, 125MSPS ADC  
14-bit, 250MSPS ADC  
0
5
10 15 20 25 30 35 40 45 50 55  
Frequency (MHz)  
61  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments.  
2
3
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010, Texas Instruments Incorporated  
THS770006  
SBOS520 JULY 2010  
www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
PACKAGE/ORDERING INFORMATION(1)  
SPECIFIED  
TEMPERATURE  
RANGE  
PACKAGE  
TYPE  
PACKAGE  
DESIGNATOR  
PACKAGE  
MARKING  
ORDERING  
NUMBER  
TRANSPORT  
MEDIA, QUANTITY  
PRODUCT  
THS770006IGRE THS770006IRGET  
Tape and reel, 250  
THS770006  
VQFN-24  
RGE  
–40°C to +85°C  
THS770006IGRE THS770006IRGER Tape and reel, 3000  
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the  
device product folder on www.ti.com.  
DEVICE MARKING INFORMATION  
= Pin 1 designator  
THS7700  
THS770006IRGE = device name  
06IRGE  
TI = TI LETTERS  
YM = YEAR MONTH DATE CODE  
TI YMS  
S = ASSEMBLY SITE CODE  
LLLL = ASSY LOT CODE  
LLLL  
ABSOLUTE MAXIMUM RATINGS(1)  
Over operating free-air temperature range, unless otherwise noted.  
THS770006  
UNIT  
V
Power supply (VS+ to GND)  
5.5  
Ground to VS+  
Ground to VS+  
10  
Input voltage range  
V
Differential input voltage, VID  
V
Continuous input current, II  
mA  
mA  
°C  
°C  
°C  
V
Continuous output current, IO  
100  
Storage temperature range, Tstg  
Maximum junction temperature, TJ  
Maximum junction temperature, continuous operation, long term reliability  
Human body model (HBM)  
–40°C to +125°C  
+150  
+125  
2500  
ESD ratings  
Charged device model (CDM)  
Machine model (MM)  
1000  
V
100  
V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may  
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond  
those specified is not implied.  
2
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): THS770006  
THS770006  
www.ti.com  
SBOS520 JULY 2010  
THERMAL INFORMATION  
THS770006  
RGE  
24 PINS  
44.1  
THERMAL METRIC(1)  
UNITS  
qJA  
Junction-to-ambient thermal resistance  
qJC(top)  
qJB  
Junction-to-case(top) thermal resistance  
Junction-to-board thermal resistance  
35  
19  
°C/W  
yJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case(bottom) thermal resistance  
0.5  
yJB  
18.8  
qJC(bottom)  
8.9  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
ELECTRICAL CHARACTERISTICS  
Test conditions are at TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400differential, G = +6dB, differential input  
and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as  
discussed in Test Circuits section.  
TEST  
PARAMETER  
AC PERFORMANCE  
Small-signal bandwidth  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
LEVEL(1)  
VOUT = 200mVPP  
VOUT = 2VPP  
2.4  
675  
485  
360  
325  
GHz  
MHz  
MHz  
MHz  
MHz  
V/µs  
V/µs  
ns  
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
Large-signal bandwidth  
Bandwidth for 0.1dB flatness  
Slew rate  
VOUT = 3VPP  
VOUT = 2VPP  
VOUT = 3VPP  
VOUT = 2V step  
VOUT = 4V step  
VOUT = 2V step  
VOUT = 2V step  
VOUT = 2V step  
3100  
3200  
0.6  
Rise time  
Fall time  
0.6  
ns  
Settling time to 0.1%  
Input return loss, s11  
Output return loss, s22  
Reverse isolation, s12  
2.2  
ns  
See s-Parameters section, f < 200MHz  
See s-Parameters section, f < 200MHz  
See s-Parameters section, f < 200MHz  
f = 10MHz  
–20  
–20  
–70  
–87  
–81  
–78  
–74  
–103  
–91  
–86  
–77  
–80  
–79  
–77  
–76  
–107  
–107  
–97  
–82  
19.6  
8.7  
dB  
dB  
dB  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBm  
dBm  
f = 50MHz  
Second-order harmonic  
distortion  
f = 100MHz  
f = 200MHz  
f = 10MHz  
f = 50MHz  
Third-order harmonic distortion  
f = 100MHz  
f = 200MHz  
f = 50MHz, 10MHz spacing  
f = 100MHz, 10MHz spacing  
f = 150MHz, 10MHz spacing  
f = 200MHz, 10MHz spacing  
f = 50MHz, 10MHz spacing  
f = 100MHz, 10MHz spacing  
f = 150MHz, 10MHz spacing  
f = 200MHz, 10MHz spacing  
Second-order intermodulation  
distortion  
Third-order intermodulation  
distortion  
RL = 20Ω  
f = 100MHz  
1dB compression point  
RL = 400Ω  
(1) Test levels: (A) 100% tested at +25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and  
simulation. (C) Typical value only for information.  
Copyright © 2010, Texas Instruments Incorporated  
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THS770006  
SBOS520 JULY 2010  
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ELECTRICAL CHARACTERISTICS (continued)  
Test conditions are at TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400differential, G = +6dB, differential input  
and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as  
discussed in Test Circuits section.  
TEST  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
LEVEL(1)  
Output third-order intercept  
point  
At device outputs, RL = 400Ω, f = 100MHz  
48  
dBm  
C
Input-referred voltage noise  
Ouput-referred voltage noise  
f > 100kHz  
f > 100kHz  
f = 50 MHz  
100Ω differential  
f = 100 MHz  
source  
f = 200 MHz  
Overdrive = ±0.5V  
f = 200MHz  
1.7  
3.4  
10.5  
11  
nV/Hz  
nV/Hz  
dB  
C
C
C
C
C
B
C
C
Noise figure  
dB  
13  
dB  
Overdrive recovery  
Output balance error  
Output impedance  
DC PERFORMANCE  
5
7.5  
ns  
-60  
4.4  
dB  
f = 100MHz  
Ω
TA = +25°C, RL = 400Ω  
TA = +25°C, RL = 100Ω  
TA = –40°C to +85°C, RL = 400Ω  
TA = –40°C to +85°C, RL = 100Ω  
TA = +25°C  
5.75  
6
6.25  
5.9  
dB  
dB  
dB  
dB  
mV  
mV  
dB  
dB  
A
B
B
B
A
B
A
B
5.5  
5.7  
5.7  
Gain  
6.3  
5.45  
–10  
–12.5  
36  
5.95  
10  
±1  
60  
Output offset  
TA = –40°C to +85°C  
TA = +25°C  
12.5  
Common-mode rejection ratio  
TA = –40°C to +85°C  
35  
INPUT  
Differential input resistance  
Input common-mode range  
OUTPUT  
85  
100  
115  
Ω
A
A
Inputs shorted together, VOCM = 2.5V  
2.25  
2.75  
V
TA = +25°C  
3.64  
3.59  
3.7  
1.3  
V
V
A
B
A
B
A
B
A
B
B
B
B
B
Each output with  
200Ω to midsupply  
Most positive output voltage  
Least positive output voltage  
Most positive output voltage  
Least positive output voltage  
Differential output voltage  
TA = –40°C to +85°C  
TA = +25°C  
1.4  
V
Each output with  
200Ω to midsupply  
TA = –40°C to +85°C  
1.45  
V
TA = +25°C  
3.59  
3.54  
3.6  
V
Each output with  
50Ω to midsupply  
TA = –40°C to +85°C  
V
TA = +25°C  
1.3  
1.5  
V
Each output with  
50Ω to midsupply  
TA = –40°C to +85°C  
1.55  
V
TA = +25°C, RL = 400Ω  
4.4  
4.2  
4.85  
VPP  
VPP  
mA  
mA  
TA = –40°C to +85°C, RL = 400Ω  
TA = +25°C, RL = 10Ω  
80  
80  
Differential output current drive  
TA = –40°C to +85°C, RL =10Ω  
OUTPUT COMMON-MODE VOLTAGE CONTROL  
VOCM small-signal bandwidth  
VOCM slew rate  
VOUT_CM = 200mVPP  
VOUT_CM = 500mVPP  
Supplied by external source(2)  
VOCM = 2.5V  
525  
180  
2.5  
1
MHz  
V/µs  
V
C
C
C
A
VOCM voltage range  
VOCM gain  
2.25  
0.98  
2.75  
1.02  
V/V  
Output common-mode offset  
from VOCM input  
VOCM = 2.5V  
–30  
12  
30  
mV  
µA  
A
A
VOCM input bias current  
2.25V VOCM 2.75V  
–400  
±30  
400  
(2) Limits set by best harmonic distortion with VOUT = 3VPP. VOCM voltage range can be extended if lower output swing is used or distortion  
degradation is allowed, and increased bias current into pin is acceptable. For more information, see Figure 12 and Figure 30.  
4
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): THS770006  
THS770006  
www.ti.com  
SBOS520 JULY 2010  
ELECTRICAL CHARACTERISTICS (continued)  
Test conditions are at TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400differential, G = +6dB, differential input  
and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as  
discussed in Test Circuits section.  
TEST  
PARAMETER  
POWER SUPPLY  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
LEVEL(1)  
Specified operating voltage  
4.75  
5
5.25  
V
C
A
B
A
B
TA = +25°C  
85  
80  
60  
59  
100  
115  
125  
mA  
mA  
dB  
dB  
Quiescent current  
TA = –40°C to +85°C  
TA = +25°C, VCC ±0.25V  
TA = –40°C to +85°C, VCC ±0.5V  
90  
Power-supply rejection ratio  
POWER-DOWN  
Enable voltage threshold  
Disable voltage threshold  
Power-down quiescent current  
Input bias current  
Device powers on below 0.5V  
0.5  
V
V
A
A
A
A
C
C
Device powers down above 2.0V  
2
0.8  
80  
3
mA  
µA  
µs  
µs  
100  
Turn-on time delay  
Time to VOUT = 90% of final value  
Time to VOUT = 10% of original value  
10  
Turn-off time delay  
0.15  
THERMAL CHARACTERISTICS  
Specified operating range  
–40  
+85  
°C  
C
C
C
(3)  
Thermal resistance, qJC  
Junction to case (bottom)  
Junction to ambient  
8.9  
°C/W  
°C/W  
(3)  
Thermal resistance, qJA  
44.1  
(3) Tested using JEDEC High-K test PCB. Thermal management of the final printed circuit board (PCB) should keep the junction  
temperature below +125°C for long term reliability.  
Copyright © 2010, Texas Instruments Incorporated  
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THS770006  
SBOS520 JULY 2010  
www.ti.com  
PIN CONFIGURATION  
RGE PACKAGE  
VQFN-24  
(TOP VIEW)  
1
2
3
4
5
6
18 NC  
17  
NC  
PD  
100W  
Unused  
50W  
16  
15  
VOUT+  
VOUT-  
VIN-  
VIN+  
VOCM  
NC  
VOCM  
50W  
100W  
14 Unused  
13  
NC  
PIN DESCRIPTIONS  
PIN  
NO.  
NAME  
DESCRIPTION  
1
NC  
PD  
No internal connection  
2
Power down. High = low power (sleep) mode. Low = active.  
Inverting input pin  
3
VIN–  
VIN+  
4
5
Noninverting input pin  
VOCM Output common-mode voltage control input pin  
NC No internal connection  
GND Ground. Must be connected to thermal pad.  
NC No internal connection  
6, 7  
8, 9, 10, 11  
12, 13  
14  
Unused Bonded to die, but not used. Tie to GND.  
VOUT– Inverting output pin  
15  
16  
VOUT+ Noninverting output pin  
17  
Unused Bonded to die, but not used. Tie to GND.  
18, 19  
NC  
VS+  
NC  
No internal connection  
20, 21, 22,  
23  
Power supply pins, +5V nominal  
No internal connection  
24  
Thermal pad  
Thermal pad on bottom of device is used for heat dissipation and must be tied to GND  
6
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Product Folder Link(s): THS770006  
THS770006  
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SBOS520 JULY 2010  
TYPICAL CHARACTERISTICS  
TABLE OF GRAPHS  
TITLE  
FIGURE  
Figure 1  
Frequency Response Magnitude (with Transformers)  
Frequency Response Magnitude (no Transformers)  
Frequency Response Phase (no Transformers)  
Small- and Large-Signal Pulse Response  
Slew Rate vs Output Voltage Step  
Figure 2  
Figure 3  
Figure 4  
Figure 5  
Overdrive Recovery  
Figure 6  
Single-Ended Input Harmonic Distortion vs Frequency  
Harmonic Distortion vs Frequency, VOUT = 1VPP, 2VPP, 3VPP  
Harmonic Distortion vs Frequency, VOUT = 0.9VPP  
Harmonic Distortion vs VOUT  
Figure 7  
Figure 8  
Figure 9  
Figure 10  
Figure 11  
Figure 12  
Figure 13  
Figure 14  
Figure 15  
Figure 16  
Figure 17  
Figure 18  
Figure 19  
Figure 20  
Figure 21  
Figure 22  
Figure 23  
Figure 24  
Figure 25  
Figure 26  
Figure 27  
Figure 28  
Figure 29  
Figure 30  
Figure 31  
Harmonic Distortion vs RL  
Harmonic Distortion vs VOCM  
Intermodulation Distortion vs Frequency, VOUT = 2VPP, 3VPP Envelope  
Intermodulation Distortion vs Frequency, VOUT = 0.9VPP Envelope  
Output Intercept Point vs Frequency  
Maximum Differential Output Voltage Swing Peak-to-Peak vs Differential Load Resistance  
Maximum/Minimum Single-Ended Output Voltage vs Differential Load Resistance  
Differential Output Impedance vs Frequency  
s-Parameters (Magnitude)  
Frequency Response vs Capacitive Load  
Recommended RO vs Capacitive Load  
Common-Mode Rejection Ratio vs Frequency  
Power-Supply Rejection Ratio vs Frequency  
VOCM Pulse Response  
Turn-On Time  
Turn-Off Time  
Input and Output Voltage Noise vs Frequency  
Output Balance Error vs Frequency  
VOCM Small-Signal Frequency Response  
VOCM Input Bias Current vs VOCM Input Voltage  
Noise Figure vs Frequency  
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THS770006  
SBOS520 JULY 2010  
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TYPICAL CHARACTERISTICS  
At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +6dB, differential input and output, and  
input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits  
section.  
FREQUENCY RESPONSE MAGNITUDE  
(WITH TRANSFORMERS)  
FREQUENCY RESPONSE MAGNITUDE  
(NO TRANSFORMERS)  
12  
9
9
6
VOUT = 200mVPP  
Measured on EVM using transformers.  
See Frequency Response: 200mVPP, 2VPP, 3VPP section.  
6
3
3
0
0
-3  
-6  
-9  
-12  
VOUT = 2VPP  
-3  
-6  
-9  
Measured on EVM;  
no transformers.  
VO = 200mVPP  
VO = 2VPP  
VOUT = 3VPP  
See Frequency Response:  
200mVPP, 2VPP, 3VPP section.  
VO = 3VPP  
100k  
1M  
10M  
100M  
1G  
10G  
10M  
100M  
Frequency (Hz)  
1G  
10G  
Frequency (Hz)  
Figure 1.  
Figure 2.  
FREQUENCY RESPONSE PHASE  
(NO TRANSFORMERS)  
SMALL- AND LARGE-SIGNAL PULSE RESPONSE  
45  
3
2
0
-45  
VOUT = 200mVPP  
1
0
-90  
-1  
-2  
-3  
VOUT = 2VPP  
Measured on EVM;  
no transformers.  
See Frequency Response:  
-135  
-180  
VOUT = 3VPP  
0.5V Step Input  
2.5V Step Input  
200mVPP, 2VPP, 3VPP section.  
100k 1M 10M  
100M  
1G  
10G  
0
20  
40  
60  
80  
100  
120  
Frequency (Hz)  
TIme (ns)  
Figure 3.  
Figure 4.  
SLEW RATE  
vs OUTPUT VOLTAGE STEP  
OVERDRIVE RECOVERY  
2.0  
1.5  
4
4000  
3000  
2000  
1000  
VIN  
Differential VOUT  
3
1.0  
2
0.5  
1
0
0
-0.5  
-1.0  
-1.5  
-2.0  
-1  
-2  
-3  
-4  
0
20  
40  
Time (ns)  
60  
80  
100  
0
1
2
3
4
5
VOUT (VPP  
)
Figure 5.  
Figure 6.  
8
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Product Folder Link(s): THS770006  
THS770006  
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SBOS520 JULY 2010  
TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +6dB, differential input and output, and  
input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits  
section.  
SINGLE-ENDED INPUT  
HARMONIC DISTORTION vs FREQUENCY  
HARMONIC DISTORTION vs FREQUENCY  
VOUT = 1VPP, 2VPP, 3VPP  
-60  
-65  
-60  
-65  
HD2, VOUT = 3VPP  
RL = 400W  
HD2, VOUT = 3VPP  
HD2, VOUT = 2VPP  
HD2, VOUT = 1VPP  
RL = 400W  
HD2, VOUT = 2VPP  
HD2, VOUT = 1VPP  
-70  
-70  
-75  
-75  
-80  
-80  
-85  
-85  
-90  
-90  
-95  
-95  
HD3, VOUT = 3VPP  
HD3, VOUT = 3VPP  
HD3, VOUT = 2VPP  
HD3, VOUT = 1VPP  
-100  
-105  
-110  
-115  
-100  
-105  
-110  
-115  
HD3, VOUT = 2VPP  
HD3, VOUT = 1VPP  
10M  
100M  
1G  
1G  
1k  
10M  
100M  
1G  
Frequency (Hz)  
Frequency (Hz)  
Figure 7.  
Figure 8.  
HARMONIC DISTORTION vs FREQUENCY  
VOUT = 0.9VPP  
HARMONIC DISTORTION  
vs VOUT  
-30  
-40  
-65  
-70  
-75  
-80  
-85  
-90  
-95  
-100  
RL = 400W  
f = 100MHz  
RL = 400W  
VOUT = 0.9VPP  
-50  
HD2  
-60  
-70  
HD3  
HD2  
-80  
-90  
HD3  
-100  
-110  
100M  
0
1
2
3
4
5
Frequency (Hz)  
VOUT Differential (V)  
Figure 9.  
Figure 10.  
HARMONIC DISTORTION  
vs RL  
HARMONIC DISTORTION  
vs VOCM  
-65  
-70  
-75  
-80  
-85  
-90  
-20  
-30  
f = 100MHz  
VOUT = 3VPP  
f = 100MHz  
RL = 400W  
-40  
HD2, VOUT = 3VPP  
HD3, VOUT = 3VPP  
-50  
-60  
HD2  
HD3  
-70  
-80  
-90  
HD3, VOUT = 2VPP  
HD2, VOUT = 2VPP  
-100  
-110  
0
200  
400  
600  
800  
2
2.25  
2.5  
2.75  
3
RL (W)  
VOCM (V)  
Figure 11.  
Figure 12.  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +6dB, differential input and output, and  
input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits  
section.  
INTERMODULATION DISTORTION  
INTERMODULATION DISTORTION  
vs FREQUENCY, VOUT = 2VPP, 3VPP ENVELOPE  
vs FREQUENCY, VOUT = 0.9VPP ENVELOPE  
-65  
-70  
-30  
-40  
RL = 400W  
IMD2, VOUT = 3VPP Envelope  
IMD2, VOUT = 2VPP Envelope  
RL = 400W  
VOUT = 0.9VPP Envelope  
-75  
-50  
-80  
-60  
IMD2  
-85  
-70  
-90  
-80  
-95  
IMD3  
-90  
-100  
-105  
-110  
IMD3, VOUT = 3VPP Envelope  
IMD3, VOUT = 2VPP Envelope  
-100  
-110  
50M  
75M  
100M  
125M  
150M  
175M  
200M  
100M  
1G  
Frequency (Hz)  
Frequency (Hz)  
Figure 13.  
Figure 14.  
OUTPUT INTERCEPT POINT  
vs FREQUENCY  
MAXIMUM DIFFERENTIAL OUTPUT VOLTAGE SWING  
PEAK-TO-PEAK vs DIFFERENTIAL LOAD RESISTANCE  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.5  
OIP2  
5.0  
Maximum  
4.5  
Differential  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
VOUT_PP  
OIP3  
RL = 400W  
VOUT = 3VPP Envelope  
50M  
100M  
150M  
200M  
10  
100  
1k  
Frequency (Hz)  
Load Resistance (W)  
Figure 15.  
Figure 16.  
MAXIMUM/MINIMUM SINGLE-ENDED OUTPUT VOLTAGE  
vs DIFFERENTIAL LOAD RESISTANCE  
DIFFERENTIAL OUTPUT IMPEDANCE  
vs FREQUENCY  
4.0  
1k  
100  
10  
3.5  
Maximum Single-Ended VOUT  
3.0  
2.5  
2.0  
Minimum Single-Ended VOUT  
1.5  
1.0  
1
10  
100  
1k  
1M  
10M  
100M  
1G  
10G  
Load Resistance (W)  
Frequency (Hz)  
Figure 17.  
Figure 18.  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +6dB, differential input and output, and  
input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits  
section.  
s-PARAMETERS  
(MAGNITUDE)  
FREQUENCY RESPONSE  
vs CAPACITIVE LOAD  
20  
0
9
6
s22  
-20  
-40  
-60  
-80  
-100  
3
s11  
s12  
0
CL = 10pF, RO = 35W  
CL = 24pF, RO = 18.7W  
CL = 44pF, RO = 13W  
CL = 94pF, RO = 8.2W  
CL = 660pF, RO = 0.7W  
-3  
-6  
1M  
10M  
100M  
1G  
10G  
10M  
100M  
1G  
10G  
Frequency (Hz)  
Frequency (Hz)  
Figure 19.  
Figure 20.  
RECOMMENDED RO  
vs CAPACITIVE LOAD  
COMMON-MODE REJECTION RATIO  
vs FREQUENCY  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1k  
100  
10  
1
1M  
10M  
100M  
1G  
1
10  
100  
1k  
Frequency (Hz)  
Capacitive Load (pF)  
Figure 21.  
Figure 22.  
POWER-SUPPLY REJECTION RATIO  
vs FREQUENCY  
VOCM PULSE RESPONSE  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.9  
2.8  
2.7  
2.6  
2.5  
2.4  
2.3  
2.2  
2.1  
2.0  
10k  
100k  
1M  
10M  
100M  
1G  
0
50  
100  
150  
200  
250  
300  
350  
400  
Frequency (Hz)  
Time (ns)  
Figure 23.  
Figure 24.  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +6dB, differential input and output, and  
input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits  
section.  
TURN-ON TIME  
TURN-OFF TIME  
4
3
4
3
Power-Down  
VOUT  
2
2
1
1
0
0
VOUT  
Power-Down  
-1  
-1  
0
4
8
12  
16  
20  
24 28  
32 36  
40  
0
2
4
6
8
10  
12 14  
16 18  
20  
Time (ms)  
Time (ms)  
Figure 25.  
Figure 26.  
INPUT AND OUTPUT VOLTAGE NOISE  
vs FREQUENCY  
OUTPUT BALANCE ERROR  
vs FREQUENCY  
10  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
Output Noise  
Input Noise  
1
10k  
100k  
1M  
10M  
100M  
1M  
10M  
100M  
1G  
10G  
Frequency (Hz)  
Frequency (Hz)  
Figure 27.  
Figure 28.  
VOCM INPUT BIAS CURRENT  
vs VOCM INPUT VOLTAGE  
VOCM SMALL-SIGNAL FREQUENCY RESPONSE  
3
0
200  
VO = 200mVPP  
150  
100  
50  
-3  
-6  
0
-9  
-50  
-100  
-150  
-200  
-12  
-15  
-18  
1M  
10M  
100M  
1G  
2.1  
2.3  
2.5  
2.7  
2.9  
Frequency (Hz)  
VOCM Input Voltage (V)  
Figure 29.  
Figure 30.  
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TYPICAL CHARACTERISTICS (continued)  
At TA = +25°C, VS+ = +5V, VOCM = +2.5V, VOUT = 2VPP, RL = 400Ω differential, G = +6dB, differential input and output, and  
input and output pins referenced to midsupply, unless otherwise noted. Measured using EVM as discussed in Test Circuits  
section.  
NOISE FIGURE  
vs FREQUENCY  
20  
100W Differential Source  
18  
16  
14  
12  
10  
8
6
4
2
0
10M  
100M  
200M  
Frequency (Hz)  
Figure 31.  
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TEST CIRCUITS  
OVERVIEW  
The standard THS770006 evaluation module (EVM) is used for testing the typical performance shown in the  
Typical Characteristics, with changes as noted below. The EVM schematic is shown in Figure 32. The signal  
generators and analyzers used for most tests have single-ended 50input and output impedance. The  
THS770006 EVM is configured to convert to and from a differential 50impedance by using RF transformers or  
baluns (CX2156NL from Pulse, supplied as a standard configuration of the EVM). For line input termination, two  
49.9resistors (R5 and R6) are placed to ground on the input transformer output pins (terminals 1 and 3). In  
combination with the 100input impedance of the device, the total impedance seen by the line is 50.  
A resistor network is used on the amplifier output to present various loads (RL) and maintain line output  
termination to 50. Depending on the test conditions, component values are changed as shown in Table 1, or as  
otherwise noted. As a result of the voltage divider on the output formed by the load component values, the  
amplifier output is attenuated. The Loss column in Table 1 shows the attenuation expected from the resistor  
divider. The output transformer causes slightly more loss, so these numbers are approximate.  
Table 1. Load Component Values(1)  
LOAD RL  
100Ω  
R15 AND R17  
25Ω  
R16  
LOSS  
6dB  
Open  
69.8Ω  
57.6Ω  
52.3Ω  
200Ω  
86.6Ω  
16.8dB  
25.5dB  
31.8dB  
400Ω  
187Ω  
1kΩ  
487Ω  
(1) The total load includes 50termination by the test equipment. Components are chosen to achieve load and 50line termination  
through a 1:1 transformer.  
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Figure 32. THS770006IRGE EVM Schematic  
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TEST DESCRIPTIONS  
The following sections describe how the tests were performed, as well as the EVM circuit modifications that were  
made (if any). Modifications made for test purposes include changing capacitors to resistors, resistors to  
capacitors, the shorting/opening of components, etc., as noted. Unless otherwise noted, C1, C2, C9, and C13  
are all changed to 0.1µF.  
Frequency Response: 200mVPP, 2VPP, 3Vpp  
This test is run with and without transformers in the signal path.  
For tests with transformers, the standard EVM is used and only the gain magnitude is shown. A network analyzer  
is connected to the input and output of the EVM with 50coaxial cables and set to measure the forward transfer  
function (s21). The input signal frequency is swept with the signal level set for the desired output amplitude. The  
use of transformers gives better magnitude response that correlates best with detailed design simulation in terms  
of peaking in the response due to better control of parasitic capacitance at the device output pins, but also  
results in excess phase shift. So only magnitude is plotted.  
For tests without transformers, the standard EVM is used, with the gain magnitude and phase shown. A network  
analyzer is connected to the input of the EVM with 50coaxial cable, the output is terminated with a 50load,  
and a high impedance differential probe is used for the measurement. The analyzer is set to measure the  
forward transfer function (s21). The analyzer with a probe input is calibrated at the input pins of the device and  
signal is measured at the output pin, thus effectively removing the transformers from the transfer function. The  
input signal frequency is swept with signal level set for desired output amplitude. Not using transformers gives  
better phase response that correlates best with detailed design simulations, but as a result of extra parasitic  
capacitance at the device output pins gives significantly more peaking in the magnitude response. The –3dB  
points of the magnitude response measured without transformers correlates better with measured slew rate, so  
both magnitude and phase are plotted.  
s-Parameters: s11, s22, and s12  
The standard EVM is used with both R15 and R17 = 24.9, and R16 = open, to test the input return loss, output  
return loss, and reverse isolation. A network analyzer is connected to the input and output of the EVM with 50Ω  
coaxial cables and set to measure the appropriate transfer function: s11, s22, or s12. Note the transformers are  
included in the signal chain in order to retrieve proper measurements with single-ended test equipment. The  
impact is minimal from 10MHz to 200MHz, but further analysis is required to fully de-embed the respective  
effects.  
Frequency Response with Capacitive Load  
The standard EVM is used with R15 and R17 = RO, R16 = CLOAD, C9 and C13 = 953, R21 = open, T2  
removed, and jumpers placed across terminals 3 to 4 and 1 to 6. A network analyzer is connected to the input  
and output of the EVM with 50coaxial cables and set to measure the forward transfer function (s21). Different  
values of load capacitance are placed on the output (at R16) and the output resistor values (R15 and R17)  
changed until an optimally flat frequency response is achieved with maximum bandwidth.  
Distortion  
The standard EVM is used for measurement of single-tone harmonic distortion and two-tone intermodulation  
distortion. For differential distortion measurements, the standard EVM is used with no modification. For  
single-ended input distortion measurements, the standard EVM is used with with T1 removed and jumpers  
placed across terminals 3 to 4 and 1 to 6, and R5 and R6 = 100Ω. A signal generator is connected to the J1  
input of the EVM with 50coaxial cables, with filters inserted inline to reduce distortion from the generator. The  
J3 output of the EVM is connected with 50coaxial cables to a spectrum analyzer to measure the  
fundamental(s) and distortion products.  
Noise Figure  
The standard EVM is used with T1 changed to a 1:2 impedance ratio transformer (Mini-Circuits ADT2), R15 and  
R17 = 24.9, and R5, R6, and R16 = open. A noise figure analyzer is connected to the input and output of the  
EVM with 50coaxial cables. The noise figure analyzer provides a 50(noise) source so that the data are  
adjusted to refer to a 100source.  
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Transient Response, Slew Rate, Overdrive Recovery  
The standard EVM is used with T1 and T2 removed and jumpers placed across terminals 3 to 4 and 1 to 6; R15,  
R17, and R25 = 49.9; C1, C2, C9, and C13 = 0; and R5, R6, R16, and R21 = open. A differential waveform  
generator is connected to the input of the EVM with 50coaxial cables at J1 and J2. The differential output at J3  
and J4 is connected with 50coaxial cables to an oscilloscope to measure the outputs. Waveform math in the  
oscilloscope is used to combine the differential output of the device.  
Power-Down  
The standard EVM is used with T1 and T2 removed, jumpers placed across terminals 3 to 4 and 1 to 6, R15 and  
R17 = 49.9, C9 and C13 = 0, and R5, R6, R16, and R21 = open. A waveform generator is connected to the  
power-down input of the EVM with a 50coaxial cable at J8. The differential output at J3 and J4 is connected  
with 50coaxial cables to an oscilloscope to measure the outputs. J1 is left disconnected so that the output is  
driven to the VOCM voltage when the device is active, and discharged through the resistive load on the output  
when disabled. Both outputs are the same and only one is shown.  
Differential Z-out  
The standard EVM is used with R15 and R17 = 24.9, and R16 = open. A network analyzer is connected to the  
output of the EVM at J3 with 50coaxial cable, both inputs are terminated with a 50load, and a  
high-impedance differential probe is used for the measurement. The analyzer is set to measure the forward  
transfer function (s21). The analyzer with probe input is calibrated across the open resistor pads of R16 and the  
signal is measured at the output pins of the device. The output impedance is calculated using the known resistor  
values and the attenuation caused by R15 and R17.  
Output Balance Error  
The standard EVM is used with R15 and R17 = 100, and R16 = 0. A network analyzer is connected to the  
input of the EVM with 50coaxial cable, the output is left open, and a high-impedance differential probe is used  
for the measurement. The analyzer is set to measure the forward transfer function (s21). The analyzer with probe  
input is calibrated at the input pins of the device and the signal is measured from the shorted pads of R16 to  
ground.  
Common-Mode Rejection  
The standard EVM is used with T1 removed and jumpers place across terminals 3 to 4, 1 to 6, and 1 to 3. A  
network analyzer is connected to the input and output of the EVM with 50coaxial cable and set to measure the  
forward transfer function (s21).  
VOCM Frequency Response  
The standard EVM is used with T2 removed and jumpers across terminals 3 to 4 and 1 to 6; R10, R15, and  
R17 = 49.9; C3 and C4 = 0; and R9, R16, and R21 = open. A network analyzer is connected to the VOCM  
input of the EVM at J7 and output of the EVM with 50coaxial cable, and set to measure the forward transfer  
function (s21). The input signal frequency is swept with the signal level set for 200mV. Each output at J3 and J4  
is measured as single-ended, and because both are the same, only one output is shown.  
VOCM Slew Rate and Pulse Response  
The standard EVM is used with T2 removed and jumpers across terminals 3 to 4 and 1 to 6; R10, R15, and  
R17 = 49.9; C9 and C13 = 0; and C3, C4, R9, R16, and R21 = open. A waveform generator is connected to  
the VOCM input of the EVM at J7 with 50coaxial cable. The differential output at J3 and J4 is connected with  
50coaxial cable to an oscilloscope to measure the outputs. J1 is left disconnected so that the output is driven  
to the VOCM voltage. Both outputs are the same, so only one is shown.  
Input/Output Voltage Noise, Settling Time, and Power-Supply Rejection  
These parameters are taken from simulation.  
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THEORY OF OPERATION  
GENERAL DESCRIPTION  
The THS770006 is a fixed-gain of +6dB, wideband, fully-differential amplifier designed and optimized specifically  
for driving 14-bit and 16-bit ADCs at input frequencies up to 200MHz. This device provides high bandwidth, low  
distortion, and low noise, which are critical parameters in high-speed data acquisition systems that require very  
high dynamic range, such as wireless base stations and test and measurement applications. It also makes an  
excellent differential amplifier for general-purpose, high-speed differential signal chain and short line-driver  
applications. The device has an operating power-supply range of 4.75V to 5.5V. The THS770006 has proprietary  
circuitry to provide very fast recovery from overdrive conditions and has a power-down mode for power saving.  
The THS770006 is offered in a Pb-free (RoHS compliant) and green, QFN-24 thermally-enhanced package. It is  
characterized for operation over the industrial temperature range of –40°C to +85°C.  
The amplifier uses two negative-feedback loops. One is for the primary differential amplifier and the other  
controls the common-mode operation.  
Primary Differential Amplifier  
The primary amplifier of the THS770006 is a fully-differential op amp with on-chip gain setting resistors (RF =  
100and RG = 50) that fix the differential gain at 2V/V, or 6dB, by use of negative feedback.  
VOCM Control Loop  
The output common-mode voltage is controlled through a second negative-feedback loop. The output  
common-mode voltage is internally sensed and compared to the VOCM pin. The loop then works to drive the  
difference, or error voltage, to zero in order to maintain the output common-mode voltage = VOCM (within the loop  
gain and bandwidth of the loop). For more details on fully-differential amplifier theory and use, see application  
report SLOA054, Fully-Differential Amplifiers, available for download from www.ti.com.  
OPERATION  
Differential to Differential  
The THS770006 is a fixed gain of 6dB, fully-differential amplifier that can be used to amplify differential input  
signals to differential output signals. A basic block diagram of the circuit is shown in Figure 33. The differential  
input to differential output configuration gives the best performance; the signal source and load should be  
balanced.  
100W  
Differential  
Input  
Differential  
Output  
50W  
VIN-  
VIN+  
VOUT+  
VOUT-  
50W  
100W  
THS770006  
Figure 33. Differential Input to Differential Output Amplifier  
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Single-Ended to Differential  
The THS770006 can be used to amplify and convert single-ended input signals to differential output signals. A  
basic block diagram of the circuit is shown in Figure 34. The gain from the single-ended input to the differential  
output is 6dB. In order to maintain proper balance in the amplifier and avoid offsets at the output, the alternate  
input must be biased and the impedance matched to the signal input. For example, if a 50source biased to  
2.5V provides the input, the alternate input should be tied to 2.5V through 50. If a 50source is ac-coupled to  
the input, the alternate input should be ac-coupled to ground through 50. Note that the ac coupling should  
provide a similar frequency response to balance the gain over frequency.  
VREF  
100W  
Differential  
Output  
Bias and  
Impedance  
Match  
50W  
VOUT+  
VOUT-  
Single-Ended  
Input  
50W  
100W  
THS770006  
Figure 34. Single-Ended Input to Differential Output Amplifier  
Setting the Output Common-Mode Voltage  
The VOCM input controls the output common-mode voltage. VOCM has no internal biasing network and must be  
driven by an external source or resistor divider network to the positive power supply. In ac-coupled applications,  
the VOCM input impedance and bias current are not critical, but in dc-coupled applications where more accuracy  
is desired, the input bias current of the pin should be considered. For best harmonic distortion with VOUT = 3VPP  
,
the VOCM input should be maintained within the operating range of 2.25V to 2.75V. The VOCM input voltage can  
be operated outside this range if lower output swing is used or distortion degradation is allowed, and increased  
bias current into the pin is acceptable. For more information, see Figure 12 and Figure 30. It is recommended to  
use a 0.1µF decoupling capacitor from the VOCM pin to ground to prevent noise and other spurious signals from  
coupling into the common-mode loop of the amplifier.  
Input Common-Mode Voltage Range  
The THS770006 is designed primarily for ac-coupled operation. With input dc blocking, the input common-mode  
voltage of the device is driven to the same voltage as VOCM by the outputs. Therefore, as long as the VOCM input  
is maintained within the operating range of 2.25V to 2.75V, the input common-mode of the main amplifier is also  
maintained within its linear operating range of 2.25V to 2.75V. If the device is used with dc coupled input, the  
driving source needs to bias the input to its linear operating range of 2.25V to 2.75V for proper operation.  
Operation with Split Supply ±2.5V  
The THS770006 can be operated using a split ±2.5V supply. In this case, VS+ is connected to +2.5V, and GND  
(and any other pin noted to be connected to GND) is connected to -2.5V. As with any device, the THS770006 is  
impervious to what the user decides to name the levels in the system. In essence, it is simply a level shift of the  
power pins by –2.5V. If everything else is level-shifted by the same amount, the device sees no difference. With  
a ±2.5V power supply, the VOCM range is 0V ±0.25V; therefore, power-down levels are –2.5V = on and +2.5V =  
off, and input and output voltage ranges are symmetrical about 0V. This design has certain advantages in  
systems where signals are referenced to ground, and as noted in the following section, for driving ADCs with low  
input common-mode voltage requirements in dc-coupled applications.  
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Driving Capcitive Loads  
The THS770006 is tested as described previously, with the data shown in the typical graphs. As a result of the  
fixed gain architecture of the device, the only practical means to avoid stability problems such as  
overshoot/ringing, gain peaking, and oscillation when driving capacitive loads is to place small resistors in series  
with the outputs (RO) to isolate the phase shift caused by the capacitive load from the feedback loop of the  
amplifier. The Typical Characteristics graphs show recommended values for an optimally flat frequency response  
with maximum bandwidth. Smaller values of RO can be used if more peaking is allowed, and larger values can  
be used to - reduce the bandwidth.  
Driving ADCs  
The THS770006 is designed and optimized for the highest performance to drive differential input ADCs.  
Figure 35 shows a generic block diagram of the THS770006 driving an ADC. The primary interface circuit  
between the amplifier and the ADC is usually a filter of some type for antialias purposes, and provides a means  
to bias the signal to the input common-mode voltage required by the ADC. Filters range from single-order real  
RC poles to higher-order LC filters, depending on the requirements of the application. Output resistors (RO) are  
shown on the amplifier outputs to isolate the amplifier from any capacitive loading presented by the filter.  
100W  
RO  
50W  
VOUT+  
AIN+  
VIN-  
VIN+  
Filter  
and  
Bias  
VOCM  
ADC  
CM  
AIN-  
VOUT-  
RO  
50W  
100W  
VOCM  
THS770006  
Figure 35. Generic ADC Driver Block Diagram  
The key points to consider for implementation are described in the following three subsections.  
SNR Considerations  
The signal-to-noise ratio (SNR) of the amplifier + filter + ADC adds in RMS fashion. Noise from the amplifier is  
bandwidth-limited by the filter. Depending on the amplitude of the signal and the bandwidth of the filter, the SNR  
of the amplifier + filter can be calculated. To get the combined SNR, this value is then squared, added to the  
square of the ADC SNR, and the square-root is taken. If the SNR of the amplifier + filter equals the SNR of the  
ADC, the combined SNR is 3dB higher and for minimal inpact on the ADC's SNR the SNR of the amplifier + filter  
should be 10dB or more lower. The combined SNR calculated in this manner is usually accurate to within ±1dB  
of actual implementation.  
SFDR Considerations  
Theoretically, the spurious-free dynamic range (SFDR) of the amplifier + filter + ADC adds linearly on a  
spur-by-spur basis. The amplifier output spurs are linearly related solely to the input signal and the SFDR is  
usually set by second-order or third-order harmonic distortion for single-tone inputs, and by second-order or  
third-order intermodulation distortion for two-tone inputs. Harmonic and second-order intermodulation distortion  
can be filtered to some degree by the antialias filter, but not third-order intermodulation distortion. Generally, the  
ADC also has the same distortion products, but as a result of the sampling nature and potential for clock  
feedthrough, there may be spurs not linearly related solely to the input signal. When the spurs from the amplifier  
+ filter are known, each can be directly added to the same spur from the ADC. This is a worst-case analysis  
based on the assumption the spurs sources are in phase. If the spur of the amplifier + filter equals the spur of the  
ADC, the combined spur is 6dB higher. The combined spur calculated in this manner is usually accurate to within  
±6dB of actual implementation, but higher variations have been observed especially in second-order  
performance as a result of phase shift in the filter.  
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Common-mode phase shift introduced by the filter nullifies the basic assumption that the spur sources are in  
phase. This phase shift can lead to better performance than predicted as the spurs become phase shifted, and  
there is the potential for cancellation as the phase shift reaches 180°.  
Differential phase shift in the filter as a result of mismatched components caused by nominal tolerance can  
severely degrade the second-order distortion of the ADC. Single-order RC filters cause very little differential  
phase shift with nominal tolerances of 5% or less, but higher-order LC filters are very sensitive to component  
mismatch. For instance, a third-order Butterworth bandpass filter with 100MHz center frequency and 20MHz  
bandwidth shows up to 20° differential phase imbalance in a Spice Monte Carlo analysis with 2% component  
tolerances. Therefore, while a prototype may work, production variance is unacceptable. A transformer or balun  
is recommended at the ADC input in these applications to restore the phase balance in the input signal to the  
ADC.  
ADC Input Common-Mode Voltage Considerations  
The input common-mode voltage range of the ADC must be observed for proper operation. In an ac-coupled  
application between the amplifier and the ADC, the input common-mode voltage bias of the ADC is  
accomplished in different ways depending on the ADC. Some use internal bias networks and others use external  
components, such as resistors, from each input to the CM output of the ADC. When ac coupling, the output  
common-mode voltage of the amplifier is a don’t care for the ADC, and VOCM should be set for optimum  
performance of the amplifier.  
DC-coupled applications vary in complexity and requirements, depending on the ADC. Devices such as the  
ADS5424 require a nominal 2.4V input common-mode, while others such as the ADS5485 require a nominal  
3.1V input common-mode, and still others like the ADS6149 require 1.5V and the ADS4149 require 0.95V. Given  
the THS770006 output common-mode range, ADCs with input common-mode closer to 2.5V are easier to  
dc-couple to, and require little or no level shifting. For applications that require a different common-mode voltage  
between the amplifier and the ADC, a resistor network can be used, as shown in Figure 36. With ADCs that have  
internal resistors (RINT) that bias the ADC input to VCM, the bias resistors do not affect the desired value of RP,  
but do cause more attenuation of the differential input signal. Knowing the differential input resistance is required  
and sometimes, that is all that is provided.  
VREF  
RP  
RO  
RINT  
VAMP+  
VADC+  
ADC  
VCM  
Amp  
VAMP-  
VADC-  
RO  
RINT  
RP  
VREF  
Figure 36. Resistor Network to DC Level Shift Common-Mode Voltage  
For common-mode analysis, assume that VAMP± = VOCM and VADC± = VADC (the specification for the ADC input  
common-mode voltage). VREF is chosen to be a voltage within the system (such as the ADC or amplifier analog  
supply) or ground, depending on whether the voltage must be pulled up or down, and RO is chosen to be a  
reasonable value, such as 49.9Ω. With these known values, RP can be found by using Equation 1:  
1
1
V
AMP - VADC  
V
CM - VADC  
=
+
V
ADC - VREF  
RO  
RINT  
RP  
(1)  
The insertion of this resistor network also attenuates the amplifier output signal. The gain (or loss) can be  
calculated by Equation 2:  
RP || RINT  
GAIN =  
RO + (RP || RINT  
)
(2)  
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Using the gain and knowing the full-scale input of the ADC, VADC FS, the required amplitude to drive the ADC with  
the network can be calculated using Equation 3:  
VAMP PP = VADC FS ´ GAIN  
(3)  
Using the ADC examples given previously, Table 2 shows sample calculations of the value of RP and VAMP FS for  
full-scale drive, and then for –1dB (often times, the ADC drive is backed off from full-scale in applications, so  
lower amplitudes may be acceptable). All voltages are in volts, resistors in Ω (the nearest standard value should  
be used), and gain as noted. Table 2 does not include the ADS5424 because no level shift is required with this  
device.  
Table 2. Example RP for Various ADCs  
VAMP PP  
VOCM  
VADC  
VREF  
GAIN  
(V/V)  
GAIN  
(dB)  
VADC FS  
VAMP PP  
–1dBFS  
(VPP  
ADC  
(VDC  
)
(VDC  
)
(VDC  
)
RINT (Ω)  
1k  
RO (Ω)  
50  
RP (Ω)  
158.3  
142.3  
75.0  
(VPP  
)
FS (VPP  
)
)
ADS5485  
ADS5493  
ADS6149  
ADS4149  
ADS4149  
2.5  
3.1  
5
0.73  
0.71  
0.60  
0.38  
0.62  
–2.71  
–2.93  
–4.44  
–8.40  
–4.15  
2
4.10  
3.65  
3.12  
2.97  
4.69  
2.88  
2.5  
3.15  
1.5  
5
1k  
50  
2.5  
2
3.50  
2.5  
0
NA  
50  
3.33  
2.5  
0(1)  
0.95  
0.95  
0
NA  
50  
30.6  
2
5.26  
2.5  
NA  
50  
81.6  
2
3.23  
(1) THS770006 with ±2.5V supply.  
The calculated values for the ADS5485 give the lowest attenuation, and because of the high VFS, it requires  
3.65VPP from the amplifier to drive to –1dBFS. Performance of the THS770006 is still very good up to 130MHz at  
this level, but the designer may want to further back off from full-scale for best performance and consider trading  
reduced SNR performance for better SFDR performance.  
The calculated values for the ADS5493 have lower attenuation as a result of reduced VFS, and requires 3.12VPP  
from the amplifier to drive to –1dBFS. Performance of the THS770006 is excellent at this level up to 130MHz.  
The values calculated for the ADS6149 show reasonable design targets and should work with good performance.  
Note the ADS6149 does not have buffered inputs, and the inputs have equivalent resistive impedance that varies  
with sampling frequency. In order to account for the increased loss, half of this resistance should be used for the  
value of RINT in Equation 2.  
The values calculated for the low input common-mode of the ADS4149 result in large attenuation of the amplifier  
signal leading to 5.26VPP being required for full-scale ADC drive. This amplitude is greater than the maximum  
capability of the device. With a single +5V supply, the THS770006 is not suitable to drive this ADC in dc-coupled  
applications unless the ADC input is backed off towards –6dBFS. Another option is to operate the THS770006  
with a split ±2.5V supply, and is shown in the last row of Table 2. For this situation, if the +2.5V is used as the  
pull-up voltage, only 2.88VPP is required for the –1dBFS input to the ADS4149. See the Operation with Split  
Supply ±2.5V section for more detail. Note that the ADS4149 does not have buffered inputs and the inputs have  
equivalent resistive impedance that varies with sampling frequency. In order to account for the increased loss,  
half of this resistance should be used for the value of RINT in Equation 2.  
As with any design, testing is recommended to validate whether it meets the specific design goals.  
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APPLICATION INFORMATION  
THS770006 DRIVING ADS5493  
To illustrate the performance of the THS770006 as an ADC driver, the device is tested with the ADS5493. The  
ADS5493 is a 16-bit, 130MSPS ADC with LVDS-compatible digital outputs on four data pairs. The device has an  
analog input buffer to isolate the internal switching of the sampling stage from the inputs. Designed for high  
SFDR, the ADC has low-noise performance and outstanding spurious-free dynamic range over a large  
input-frequency range. Key information points to consider when interfacing to an amplifier are:  
Input buffer with constant load vs frequency  
3.15V analog input common mode  
Full-scale differential input programmable from 1.5VPP to 2.5VPP  
2kΩ differential input impedance with internal common-mode bias  
4.6pF to 5.6pF for each analog input to ground (depending on PCB layout)  
SNR = 75.2dBFS (typ) at fIN = 100MHz  
SFDR = 100dBc (typ) at fIN = 100MHz  
HD2 = 100dBc (typ) at fIN = 100MHz  
HD3 = 100dBc (typ) at fIN = 100MHz  
The ADS5493 EVM is designed for flexible options to ease design work. Used in conjunction with the  
TSW1200EVM High Speed ADC LVDS Evaluation System, it reduces evaluation times to help the designer get  
from prototype to production more quickly.  
The ADS5493 EVM provides an input transformer for converting single-ended test signals to differential. The  
differential outputs are configurable to drive the ADC directly through passive components or to insert the  
THS770006 along with options for antialias filtering in the signal path to drive the ADC. The schematic of the  
antialias filter components is shown in Figure 37. Note: the circuit shown is from an early prototype of the  
ADS5493 EVM available at the time this data sheet was written and is provided as a reference only. The final  
released board may have changes.  
THS7700  
Output  
ADS5493  
Input  
Figure 37. ADS5493 EVM Antialias Filter Components  
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TESTING THE ADS5493 WITH AN AC-COUPLED BANDPASS FILTER  
For testing purposes, a 30MHz, third-order Butterworth bandpass filter with center frequency at 100MHz is  
designed and built on the EVM. The design target for the source impedance is 40Ω differential, and for load  
impedance is 400Ω differential. Therefore, approximately 1dB insertion loss is expected in the pass-band,  
requiring the amplifier output amplitude to be 2.5VPP to drive the ADC to –1dBFS.  
The output noise voltage specification for the THS770006 is 3.4 nV/Hz. With 2.5VPP amplifier output voltage  
swing and 30MHz bandwidth, the expected SNR from the amplifier + antialias filter is 93.5dB. When added in  
combination with the ADS5493, the expected total SNR is 75.1dBFS for the typical case.  
Figure 38 shows the resulting FFT plot when driving the ADC to –1dBFS with a single-tone 100MHz sine wave,  
and sampling at 125MSPS. Test results show 98dBc SFDR from the second-order harmonic and 75.6 dBFS  
SNR; analysis of the plot is shown in Table 3 versus typical ADC specifications. The test results from circuit  
board to circuit board shows over 10dB of variation in the second order harmonic and a balun is inserted  
between the filter and ADC inputs to get repeatable performance. With balun, the minimum expected results  
should be better than 90dBc SFDR and 75dBFS SNR.  
Figure 38 shows the same circuit with a two-tone input at 96MHz and 100MHz. The near-in 3rd order  
intermodulation terms are about -100dBc.  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
0
5
10 15 20 25 30 35 40 45 50 55  
Frequency (MHz)  
62.5  
Figure 38. FFT Plot of THS770006 + 30MHz BPF + ADS5493 with Single-Tone at 100MHz  
Table 3. Analysis of FFT for THS770006 + BPF + ADS5493 at 100MHz vs Typical ADC Specifications  
CONFIGURATION  
THS770006 + BPF + ADS5493  
ADS5493 Only (typ)  
ADC INPUT  
–1dBFS  
SNR  
HD2  
HD3  
75.6dBFS  
75.2dBFS  
–98dBc  
–100dBc  
–107dBc  
–100dBc  
–1dBFS  
10  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
130  
140  
0
5
10 15 20 25 30 35 40 45 50 55  
Frequency (MHz)  
61  
Figure 39. FFT Plot of THS770006 + 30MHz BPF + ADS5493 with Two-Tone Input at 96MHz and 100MHz  
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TESTING THE ADS5493 WITH AN AC-COUPLED LOW-PASS FILTER  
For testing the ADS5493, a 150MHz, first-order, low-pass filter is built on the EVM with the following component  
changes: R10, R16, L3, and L24 = 100Ω, and C148 = 1.2pF. AC-coupling is done by inserting a 1µF capacitor  
for C133 and C136. This design gives approximately 1.6dB insertion loss at low frequency, requiring the amplifier  
signal be 2.7VPP in order to drive the ADC to -1dBFS.  
With 2.7VPP amplifier output voltage swing and 180MHz (–3dB) bandwidth, the expected SNR from the amplifier  
+ antialias filter is 84.4dB. When added in combination with the ADS5493, the total expected SNR is 74.7dBFS  
for the typical case. Note the frequency response is approximately -1dB at 100MHz, which requires even higher  
amplitude for the following test.  
Figure 40 shows the resulting FFT plot when driving the ADC to –1dBFS with a 100MHz sine wave, and  
sampling at 125MSPS. Test results showed 91dBc SFDR from second- and third-order harmonic and 73.1dBFS  
SNR; analysis of the plot is shown in Table 4 versus typical ADC specifications. As a result of harmonic  
attenuation and phase shift between the amplifier and ADC, harmonic performance is better than predicted from  
the worst-case scenario described previously. Typical expected results should be approximately 90dBc SFDR  
and 73dBFS SNR.  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
-110  
-120  
-130  
0
5
10 15 20 25 30 35 40 45 50 55  
Frequency (MHz)  
62.5  
Figure 40. FFT Plot of THS770006 + 180MHz LPF + ADS5493 with Single-Tone at 100MHz  
Table 4. Analysis of FFT for THS770006 + 180MHz LPF + ADS5493 at 100MHz vs Typical ADC  
Specifications  
CONFIGURATION  
THS770006 + BPF + ADS5493  
ADS5493 Only (typ)  
ADC INPUT  
–1dBFS  
SNR  
HD2  
HD3  
73.1dBFS  
75.2dBFS  
–91dBc  
–100dBc  
–91dBc  
–100dBc  
–1dBFS  
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EVM AND LAYOUT RECOMMENDATIONS  
Figure 32 is the THS770006RGE EVM schematic, and Figure 41 through Figure 44 show the layout details of the  
EVM PCB. Table 5 is the bill of materials for the EVM as supplied from TI. It is recommended to follow the layout  
of the external components as close as possible to the amplifier, ground plane construction, and power routing.  
General layout guidelines are:  
1. Place a 2.2µF to 10µF capacitor on each supply pin within 2 inches from the device. It can be shared among  
other op amps.  
2. Place a 0.01µF to 0.1µF capacitor on each supply pin to ground as close as possible to the device.  
Placement within 1mm of the device supply pins ensures best performance.  
3. Keep input and output traces as short as possible to minimize parasitic capacitance and inductance. Doing  
so reduces unwanted characteristics such as reduced bandwidth and peaking in the frequency response,  
overshoot, and ringing in the pulse response, and results in a more stable design.  
4. To reduce parasitic capacitance, ground plane and power-supply planes should be removed from device  
input pins and output pins.  
5. The VOCM pin must be biased to a voltage between 2.25V to 2.75V for proper operation. Place a 0.1µF to  
0.22µF capacitor to ground as close as possible to the device to prevent noise coupling into the  
common-mode.  
6. For best performance, drive circuits and loads should be balanced and biased to keep the input and output  
common-mode voltage between 2.25V to 2.75V. AC-coupling is a simple way to achieve this performance.  
7. The THS770006 is provided in a thermally enhanced PowerPAD™ package. The package is constructed  
using a downset leadframe on which the die is mounted. This arrangement results in low thermal resistance  
to the thermal pad on the underside of the package. Excellent thermal performance can be achieved by  
following the guidelines in TI application reports SLMA002, PowerPAD™ Thermally-Enhanced Package and  
SLMA004, PowerPAD™ Made Easy. For proper operation, the thermal pad on the bottom of the device must  
be tied to the same voltage potential as the GND pin on the device.  
Figure 41. EVM Layout: Top Layer  
Figure 42. EVM Layout: Bottom Layer  
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Figure 43. EVM Layout: Layer 2  
Figure 44. EVM Layout: Layer 3  
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Table 5. THS770006RGE EVM Bill of Materials  
SMD  
SIZE  
REFERENCE  
DESIGNATOR  
MANUFACTURER  
PART NUMBER  
DISTRIBUTOR  
PART NUMBER  
ITEM  
DESCRIPTION  
QTY  
1
2
3
4
CAP, 10.0uF, CERAMIC, X7R, 10V  
CAP, 0.1uF, CERAMIC, X7R, 16V  
CAP, 0.01uF, CERAMIC, X7R, 16V  
CAP, 100pF, CERAMIC, NPO, 50V  
1206  
0603  
0402  
0402  
C4, C5, C6  
C7, C8  
3
2
2
1
(TDK) C3216X7R1A106K  
(AVX) 0603YC104KAT2A  
(AVX) 0402YC103KAT2A  
(AVX) 04025A101KAT2A  
(DIGI-KEY) 445-4043-1-ND  
(DIGI-KEY) 478-1239-1-ND  
(DIGI-KEY) 478-1114-1-ND  
(DIGI-KEY) 478-4979-1-ND  
C10, C11  
C12  
C1, C2, C3, C9,  
C13  
5
6
CAP, 1000pF, CERAMIC, X7R, 50V  
OPEN  
0402  
0402  
5
4
(AVX) 04025C102KAT2A  
(DIGI-KEY) 478-1101-1-ND  
R11, R12, R13,  
R14  
7
RESISTOR, 0 OHM  
0402  
0402  
0402  
0402  
0402  
0603  
R4, R21  
R5, R6  
R16  
2
2
1
2
2
2
2
(PANASONIC) ERJ-2GE0R00X  
(PANASONIC) ERJ-2RKF49R9X  
(PANASONIC) ERJ-2RKF57R6X  
(PANASONIC) ERJ-2RKF1870X  
(DIGI-KEY) P0.0JCT-ND  
(DIGI-KEY) P49.9LCT-ND  
(DIGI-KEY) P57.6LCT-ND  
(DIGI-KEY) P187LCT-ND  
8
RESISTOR, 49.9 OHM, 1/10W, 1%  
RESISTOR, 57.6 OHM, 1/10W, 1%  
RESISTOR, 187 OHM, 1/10W, 1%  
RESISTOR, 1K OHM, 1/10W, 1%  
RESISTOR, 10K OHM, 1/10W, 1%  
TRANSFORMER, BALUN  
9
10  
11  
12  
13  
R15, R17  
R9, R10  
R25, R26  
T1, T2  
(PANASONIC) ERJ-2RKF1001X (DIGI-KEY) P1.00KLCT-ND  
(PANASONIC) ERJ-3EKF1002V (DIGI-KEY) P10.0KHCT-ND  
(PULSE) CX2156NL  
(SPC) 15459  
(DIGI-KEY) 553-1499-ND  
(NEWARK) 79K5034  
JACK, BANANA RECEPTANCE, 0.25"  
DIA. HOLE  
14  
J5, J6  
3
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
CONNECTOR, SMA PCB JACK  
CONNECTOR, EDGE, SMA PCB JACK  
HEADER, 0.1" CTRS, 0.025" SQ. PINS  
SHUNTS  
J7, J8  
J1, J2, J3, J4  
JP1, JP2  
JP1, JP2  
TP3  
2
4
2
2
1
2
1
4
4
(AMPHENOL) 901-144-8RFX  
(JOHNSON) 142-0701-801  
(SULLINS) PBC36SAAN  
(SULLINS) SSC02SYAN  
(KEYSTONE) 5000  
(NEWARK) 34C8151  
(NEWARK) 90F2624  
3 POS.  
(DIGI-KEY) S1011E-36-ND  
(DIGI-KEY) S9002-ND  
(DIGI-KEY) 5000K-ND  
(DIGI-KEY) 5001K-ND  
TEST POINT, RED  
TEST POINT, BLACK  
TP1, TP2  
U1  
(KEYSTONE) 5001  
IC, THS770006  
(TI) THS770006RGE  
STANDOFF, 4-40 HEX, 0.625" LENGTH  
SCREW, PHILLIPS, 4-40, .250"  
BOARD, PRINTED CIRCUIT  
(KEYSTONE) 1808  
(DIGI-KEY) 1808K-ND  
(DIGI-KEY) H703-ND  
PMSSS 440 0025 PH  
(TI) EDGE# 6515711 REV.A  
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Evaluation Board/Kit Important Notice  
Texas Instruments (TI) provides the enclosed product(s) under the following conditions:  
This evaluation board/kit is intended for use for ENGINEERING DEVELOPMENT, DEMONSTRATION, OR EVALUATION PURPOSES  
ONLY and is not considered by TI to be a finished end-product fit for general consumer use. Persons handling the product(s) must have  
electronics training and observe good engineering practice standards. As such, the goods being provided are not intended to be complete  
in terms of required design-, marketing-, and/or manufacturing-related protective considerations, including product safety and environmental  
measures typically found in end products that incorporate such semiconductor components or circuit boards. This evaluation board/kit does  
not fall within the scope of the European Union directives regarding electromagnetic compatibility, restricted substances (RoHS), recycling  
(WEEE), FCC, CE or UL, and therefore may not meet the technical requirements of these directives or other related directives.  
Should this evaluation board/kit not meet the specifications indicated in the User’s Guide, the board/kit may be returned within 30 days from  
the date of delivery for a full refund. THE FOREGOING WARRANTY IS THE EXCLUSIVE WARRANTY MADE BY SELLER TO BUYER  
AND IS IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED, IMPLIED, OR STATUTORY, INCLUDING ANY WARRANTY OF  
MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE.  
The user assumes all responsibility and liability for proper and safe handling of the goods. Further, the user indemnifies TI from all claims  
arising from the handling or use of the goods. Due to the open construction of the product, it is the user’s responsibility to take any and all  
appropriate precautions with regard to electrostatic discharge.  
EXCEPT TO THE EXTENT OF THE INDEMNITY SET FORTH ABOVE, NEITHER PARTY SHALL BE LIABLE TO THE OTHER FOR ANY  
INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES.  
TI currently deals with a variety of customers for products, and therefore our arrangement with the user is not exclusive.  
TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or  
services described herein.  
Please read the User’s Guide and, specifically, the Warnings and Restrictions notice in the User’s Guide prior to handling the product. This  
notice contains important safety information about temperatures and voltages. For additional information on TI’s environmental and/or  
safety programs, please contact the TI application engineer or visit www.ti.com/esh.  
No license is granted under any patent right or other intellectual property right of TI covering or relating to any machine, process, or  
combination in which such TI products or services might be or are used.  
FCC Warning  
This evaluation board/kit is intended for use for ENGINEERING DEVELOPMENT, DEMONSTRATION, OR EVALUATION PURPOSES  
ONLY and is not considered by TI to be a finished end-product fit for general consumer use. It generates, uses, and can radiate radio  
frequency energy and has not been tested for compliance with the limits of computing devices pursuant to part 15 of FCC rules, which are  
designed to provide reasonable protection against radio frequency interference. Operation of this equipment in other environments may  
cause interference with radio communications, in which case the user at his own expense will be required to take whatever measures may  
be required to correct this interference.  
EVM Warnings and Restrictions  
It is important to operate this EVM within the input voltage range of 0V to +5.5V and the output voltage range of 0V to +5.5V.  
Exceeding the specified input range may cause unexpected operation and/or irreversible damage to the EVM. If there are questions  
concerning the input range, please contact a TI field representative prior to connecting the input power.  
Applying loads outside of the specified output range may result in unintended operation and/or possible permanent damage to the EVM.  
Please consult the EVM User's Guide prior to connecting any load to the EVM output. If there is uncertainty as to the load specification,  
please contact a TI field representative.  
During normal operation, some circuit components may have case temperatures greater than +85°C. The EVM is designed to operate  
properly with certain components above +85°C as long as the input and output ranges are maintained. These components include but are  
not limited to linear regulators, switching transistors, pass transistors, and current sense resistors. These types of devices can be identified  
using the EVM schematic located in the EVM User's Guide. When placing measurement probes near these devices during operation,  
please be aware that these devices may be very warm to the touch.  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2010, Texas Instruments Incorporated  
Copyright © 2010, Texas Instruments Incorporated  
Submit Documentation Feedback  
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Product Folder Link(s): THS770006  
PACKAGE OPTION ADDENDUM  
www.ti.com  
19-Aug-2010  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
THS770006IRGER  
THS770006IRGET  
ACTIVE  
ACTIVE  
VQFN  
VQFN  
RGE  
RGE  
24  
24  
3000  
250  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-2-260C-1 YEAR  
Request Free Samples  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-2-260C-1 YEAR  
Purchase Samples  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Aug-2010  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
THS770006IRGER  
THS770006IRGET  
VQFN  
VQFN  
RGE  
RGE  
24  
24  
3000  
250  
330.0  
180.0  
12.4  
12.4  
4.25  
4.25  
4.25  
4.25  
1.15  
1.15  
8.0  
8.0  
12.0  
12.0  
Q2  
Q2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
27-Aug-2010  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
THS770006IRGER  
THS770006IRGET  
VQFN  
VQFN  
RGE  
RGE  
24  
24  
3000  
250  
346.0  
190.5  
346.0  
212.7  
29.0  
31.8  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,  
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www.ti.com/wireless-apps  
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Copyright © 2010, Texas Instruments Incorporated  

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