TL1593CNS [TI]
780- 】 488-pixel ccd image sensor; 780- 】 488像素的CCD图像传感器
| 型号： | TL1593CNS |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 780- 】 488-pixel ccd image sensor |
| 文件： | 总18页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
DUAL-IN-LINE PACKAGE
(TOP VIEW)
•
•
•
High-Resolution, Solid-State Image Sensor
for NTSC B/W TV Applications
11-mm Image-Area Diagonal, Compatible
With 2/3” Vidicon Optics
1
22
21
20
19
18
17
16
15
14
13
12
SUB
IAG
SUB
ABG
IAG
2
754 (H) x 244 (V) Active Elements in
Image-Sensing Area
3
SAG
•
•
•
•
•
•
•
•
Low Dark Current
4
TDB
SAG
SRG3
SRG2
SRG1
TRG
IDB
Electron-Hole Recombination Antiblooming
Dynamic Range . . . More Than 60 dB
High Sensitivity
5
ADB
6
OUT3
OUT2
OUT1
AMP GND
GND
High Photoresponse Uniformity
High Blue Response
7
8
Single-Phase Clocking
9
Solid-State Reliability With No Image
Burn-in, Residual Imaging, Image
Distortion, Image Lag, or Microphonics
10
11
CDB
SUB
SUB
description
The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W
NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small
size, high reliability, and low cost.
The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the
vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced
sensor with significant reduction in the dark signal.
Agatedfloating-diffusiondetectionstructurewithanautomaticresetandvoltagereferenceincorporatedon-chip
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and
provides high output-drive capability.
The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue
response, low dark current, high photoresponse uniformity, and single-phase clocking.
The TC241 is characterized for operation from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright 1991, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
functional block diagram
Top Drain
21
20
ABG
IAG
2
Image Area With
Blooming Protection
IAG
4
TDB
3
Dark-Reference Elements
Storage Area
SAG
Amplifiers
5
ADB
6
OUT3
19
SAG
Multiplexer, Transfer
Gates and Serial Registers
7
18
17
16
OUT2
SRG3
SRG2
SRG1
8
OUT1
15
TRG
Clearing Drain
13
6 Dummy
Elements
9
10
GND
14
CDB IDB
AMP GND
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
sensor topology diagram
780
3
1
753
24
1
Image-Sensing
Area
244
488
Image-Storage
Area
One 1/2-Amplitude Element
7
251
251
251
8
8
One 1/2-Amplitude Element
6 Dummy
Columns
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
ABG
ADB
21
5
I
I
Antiblooming gate
Supply voltage for amplifier-drain bias
Amplifier ground
AMP GND
CDB
9
13
10
2
I
Supply voltage for clearing-drain bias
Ground
GND
†
IAG
IAG
I
I
Image-area gate
†
20
14
8
Image-area gate
IDB
I
Supply voltage for input diode bias
Output signal 1
OUT1
OUT2
OUT3
O
O
O
I
7
Output signal 2
6
Output signal 3
†
†
SAG
SAG
3
Storage-area gate
19
16
17
18
1
I
Storage-area gate
SRG1
SRG2
SRG3
I
Serial-register gate 1
Serial-register gate 2
Serial-register gate 3
Substrate and clock return
Substrate and clock return
Substrate and clock return
Substrate and clock return
Supply voltage for top-drain bias
Transfer gate
I
I
†
†
†
†
SUB
SUB
SUB
SUB
11
12
22
4
TDB
TRG
I
I
15
†
All pins of the same name should be connected together externally.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
detailed description
The TC241 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area,
(3) the multiplexer with serial registers and transfer gates, and (4) the buffer amplifier with charge-detection
nodes. The location of each of these blocks is shown in the functional block diagram.
image-sensing storage areas
Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are
shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are
generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate
is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming
caused by the spilling of charge from overexposed elements into neighboring elements. After the completion
of integration, the signal charge is transferred into the storage area. To generate the dark reference necessary
in subsequent video-processing circuits for restoration of the video-black level, 23 full columns and one
half-column of elements at the left edge of the image-sensing area are shielded from incident light. Two full
columns and one half-column of elements at the right of the image-sensing area are also shielded from incident
light. The total number of elements per row is 780 (753 active elements plus 25 shielded elements and 2
transitional elements).
multiplexer with transfer gates and serial registers
The multiplexer and transfer-gates transfer charge line by line from the image-element columns into the
corresponding serial register and prepare it for readout. Multiplexing is activated during the horizontal-blanking
interval by applying appropriate pulses to the transfer gates and serial registers. The required pulse timing is
shown in Figure 3. A drain is included in this area to provide the capability to quickly clear the image-sensing
and storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of
operation or under special circumstances when nonstandard TV operation is desired.
buffer amplifier with charge-detection nodes
The bufferamplifierconverts charge into a video signal. Figure 4 shows the circuit diagram of a charge-detection
node and one of the three amplifiers. As charge is transferred into the detection node, the potential of this node
changes in proportion to the amount of signal received. This change is sensed by an MOS transistor and, after
proper buffering, the signal is supplied to the output terminal of the image sensor. After the potential change has
been sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset
is accomplished by a reset gate that is connected internally to the serial register. The detection nodes and
corresponding amplifiers are located some distance from the edge of the storage area; six dummy elements
are used to span this distance. The location of the dummy elements is shown in the functional block diagram.
11.5 µm
Light
Clocked Barrier
IAG
ABG
Virtual Barrier
Antiblooming
Clocking Levels
27 µm
Antiblooming Gate
Virtual Well
Clocked Well
Accumulated Charge
Figure 1. Charge-Accumulation Process
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
SAG
Clocked Phase
Virtual Phase
Channel Stops
Figure 2. Charge-Transfer Process
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
Composite
Blanking
ABG
IAG
SAG
TRG
SRG 1
SRG2
SRG3
Expanded
Horizontal
Blanking Interval
Figure 3. Timing Diagram
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
Reference Generator
ADB
Reset Gate
and
Output Diode
CCD Register
Detection Node
Two-Stage
Source-
Clocked Virtual
Follower
Amplifier
Gate
Gate
OUTn
SRGn
Figure 4. Buffer Amplifier and Charge-Detection Node
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
spurious-nonuniformity specification
Thespurious-nonuniformityspecificationoftheTC241CCDgrades –10, –20, –30, and–40isbasedonseveral
sensor characteristics:
•
•
Amplitude of the nonuniform pixel
Polarity of the nonuniform pixel
–
–
Black
White
•
Location of the nonuniformity (see Figure 5)
–
–
–
Area A
–
–
Element columns near horizontal center of the area
Element rows near vertical center of the area
Area B
–
Up to the pixel or line border
Up to area A
–
Other
–
Edge of the imager
Up to area B
–
•
•
•
Nonuniform pixel count
Distance between nonuniform pixels
Column amplitude
The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,
the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated condition,
the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7.
15 Pixels
360
Pixels
7
Lines
233
Lines
A
B
11
Lines
20 Pixels
Figure 5. Sensor-Area Map
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
mV
Amplitude
% of Total
Illumination
t
t
Figure 6. Pixel-Nonuniformity,
Dark Condition
Figure 7. Pixel-Nonuniformity,
Illuminated Condition
The grade specification for the TC241 is as follows (CCD video-output signal is 50 mV ±10 mV):
Pixel-nonuniformity:
DARK CONDITION
ILLUMINATED CONDITION
DISTANCE
SEPARATION
NONUNIFORM PIXEL TYPE
PART
NUMBER
TOTAL
COUNT
PIXEL
AMPLITUDE, x
(mV)
†
WHITE BLACK
AREA AREA
W/B
AREA
% OF TOTAL
ILLUMINATION
‡
AREA A AREA B
X
Y
AREA
A
0
2
0
3
0
B
0
5
0
7
0
A
0
2
0
3
0
B
0
5
0
7
0
A
0
2
0
3
0
B
0
5
0
7
0
TC241-20
TC241-30
x > 3.5
2.5 < x ≤ 3.5
x > 3.5
x > 5
5.0 < x ≤ 7.5
x > 7.5
0
2
0
3
0
0
5
0
7
0
—
—
—
—
A
12
100
—
80
—
3.5 < x ≤ 7
x > 7
7.5 < x ≤ 15
x > 15
TC241-40
15
—
†
‡
White and black nonuniform pixel pair
The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black
pixels in the illuminated condition. The sum of all nonuniform combinations do not exceed the total count.
Column nonuniformity:
WHITE
BLACK
COLUMN
PART
AMPLITUDE, x
AREAS
A AND B
AREAS
A AND B
NUMBER
(mV)
TC241-20
TC241-30
TC241-40
x > 0.3
x > 0.5
x > 0.7
0
0
0
0
0
0
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, V : ADB, CDB, IDB, TDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V
CC
Input voltage range, V : ABG, IAG, SAG, SRG, TRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V to 15 V
I
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to 45°C
A
Storage temperature range, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°C
STG
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the substrate terminal.
recommended operating conditions
MIN NOM
MAX
UNIT
V
Supply voltage, V
CC
Substrate bias voltage
ADB, CDB, IDB, TDB
11
12
0
13
V
High level
1.5
2
2.5
§
§
IAG
Intermediate level
–5
–9
2
Low level
–10
1.5
–10
2
–8
2.5
–8
6
High level
SRG1, SRG2, SRG3
ABG
Low level
–9
4
High level
‡
V
Input voltage, V
I
Intermediate level
Low level
–2.5
–7
2
High level
1.5
–10
1.5
2.5
–8
SAG
TRG
Low level
–9
2
High level
2.5
–8
Low level
–10
–9
IAG, SAG
2.05
4.77
2.05
8
Clock frequency, f
Load capacitance
SRG1, SRG2, SRG3, TRG
ABG
MHz
clock
OUT1, OUT2, OUT3
pF
Operating free-air temperature, T
–10
45
°C
A
‡
The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage
levels.
§
Adjustment is required for optimal performance.
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
electrical characteristics over recommended operating ranges of supply voltage and operating
free-air temperature (unless otherwise noted)
†
TYP
PARAMETER
Antiblooming disabled (see Note 3)
MIN
60
MAX
UNIT
dB
Dynamic range (see Note 2)
Charge-conversion factor
1.4
1.6
1.8
µV/e
Charge-transfer efficiency (see Note 4)
0.9999 0.99995
Signal-response delay time, τ (see Note 5 and Figure 11)
Gamma (see Note 6)
18
20
0.98
700
0.13
0.11
120
20
22
ns
0.97
Output resistance
800
Ω
1/f noise (5 kHz)
Noise voltage
µV/√Hz
Random noise (f = 100 kHz)
Noise-equivalent signal
electrons
ADB (see Note 7)
Rejection ratio at 4.77 MHz
Supply current
SRG1, SRG2, SRG3 (see Note 8)
ABG (see Note 9)
40
dB
20
5
mA
IAG
12000
120
4000
350
14000
SRG1, SRG2, SRG3
Input capacitance, C
ABG
TRG
SAG
pF
i
†
All typical values are at T = 25 °C
A
NOTES: 2. Dynamic range is –20 times the logarithm of the mean-noise signal divided by the saturation-output signal.
3. For this test, the antiblooming gate must be biased at the intermediate level.
4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state.
6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this
value represents points near saturation):
Exposure (2)
Exposure (1)
Output signal (2)
Output signal (1)
7. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
8. SRGn rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn.
9. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
optical characteristics, T = 40°C (unless otherwise noted)
A
PARAMETER
MIN
TYP
150
19
MAX
UNIT
No IR filter
Measured at V
(see Notes 10 and 11)
U
Sensitivity
mV/lx
With IR filter
Saturation signal, V
(see Note 12) Antiblooming disabled, interlace off
320
180
100
200
400
360
mV
mV
sat
Maximum usable signal, V
use
Antiblooming enabled, interlace on
Interlace on
Blooming-overload ratio (see Note 13)
Interlace off
3
Image-area well capacity
Smear (see Note 14)
Dark current
200 x 10
electrons
See Note 15
0.00072
0.027
2
Interlace off
T
= 21°C
nA/cm
A
TC241-30
TC241-40
TC241-30
TC241-40
TC241-30
TC241-40
15
20
Dark signal (see Note 16)
Pixel uniformity
mV
3.5
5
Output signal = 50 mV ±10 mV
mV
mV
0.5
0.7
15%
Column uniformity
Shading
Output signal = 50 mV ±10 mV
Output signal = 100 mV
NOTES: 10. Sensitivity is measured at an integration time of 16.667 ms with a source temperature of 2856 K. A CM-500 filter is used.
11. is the output voltage that represents the threshold of operation of antiblooming. V ≈ 1/2 saturation signal.
V
U
U
12. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
13. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure.
14. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent
to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the
image-area vertical height with recommended clock frequencies.
15. Exposure time is 16.67 ms and the fast-dump clocking rate during vertical timing is 2.05 MHz.
16. Dark-signal level is measured from the dummy pixels.
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
Blooming Point
With Antiblooming
Enabled
V
O
Blooming Point
With Antiblooming
Disabled
Dependent on
Well Capacity
V
sat (min)
Level Dependent
Upon Antiblooming
Gate High Level
V
use (max)
V
use (typ)
DR
V
n
Lux
(light input)
camera white-clip voltage
Vn
DR (dynamic range)
V
V
= noise-floor voltage
n
= minimum saturation voltage
sat (min)
V
= maximum usable voltage
use (max)
= typical user voltage (camera white clip)
V
use (typ)
NOTES: A.
V
is defined as the voltage determined to equal the camera white clip. This voltage must be less than V
use
use (typ)
.
(max)
B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering
the V , the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the
use (typ)
camera.
Figure 8. Typical V , V
Relationship
sat use
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
PARAMETER MEASUREMENT INFORMATION
100%
V
IH
min
Intermediate Level
V
IL
max
0%
t1
t2
Slew rate between 10% and 90% = 70 to 120 V/µs
Ratio t1 : t2 at 2 MHz = 4:3
Ratio t1 : t2 at 1 MHz = 1:1
Figure 9. Typical Clock Waveform for ABG, IAG, and SAG
100%
V
IH
min
10%
0%
V
IL
max
t1
t2
Slew rate between 10% and 90% = 300 V/µs
Ratio t1 : t2 = 1:1
Figure 10. Typical Clock Waveform for SRG1, SRG2, SRG3, and TRG
1.5 V to 2.5 V
– 8 V to –10 V
SRG
– 8 V
0%
OUT
90%
100%
CCD Delay
τ
10 ns
15 ns
Sample
and
Hold
Figure 11. SRG and CCD Output Waveforms
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
TYPICAL CHARACTERISTICS
VERTICAL MODULATION
TRANSFER FUNCTION
HORIZONTAL MODULATION
TRANSFER FUNCTION
(BARS PARALLEL TO SERIAL REGISTER)
(BARS PERPENDICULAR TO SERIAL REGISTER)
1
1
0.8
0.8
0.6
0.4
0.6
0.4
0.2
0
0.2
0
λ = 400 to 700-nm Monochromatic Light
λ = 400 to 700-nm Monochromatic Light
V = 12 V
V
T
A
= 12 V
ADB
= 25°C
ADB
T = 25°C
A
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Normalized Spatial Frequency
Normalized Spatial Frequency
0
0
3.7
7.4
11.1
14.8
18.5
8.7
17.4
26.1
34.8
43.5
Spatial Frequency – Cycles/mm
Spatial Frequency – Cycles/mm
Figure 12
Figure 13
AMPLIFIER NOISE VOLTAGE
RESPONSIVITY
vs
vs
FREQUENCY
WAVELENGTH OF INCIDENT LIGHT
1
1000
100
10
100%
V
T
A
= 12 V
ADB
= 25°C
V
T
A
= 12 V
ADB
= 25°C
70%
50%
30%
20%
0.1
10%
7%
5%
3%
2%
1
0.01
3
10
4
10
5
10
6
10
7
10
400
600
800
1000
1200
f – Frequency – Hz
Incident Wavelength – nm
Figure 14
Figure 15
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
APPLICATION INFORMATION
V
V
V
ABG+
SS
TMS3473B
IALVL
ADB
1
2
3
4
5
6
7
8
20
19
18
17
16
15
14
13
12
11
47 kΩ
IALVL
V
SS
I/N
IASR
IAIN
ABSR
TC241
SH2, 3
22
21
20
19
18
17
16
15
14
13
12
1
47 kΩ
ABIN
MIDSEL
SAIN
PD
V
SUB
ABG
IAG
SUB
IAG
CC
2
ABLVL
IAOUT
ABLVL
3
TL1593
L
SAG
4
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
4.7 µF
‡
+
ANLGV
AIN1
CIN1
IAN2
CIN2
AIN3
CIN3
S/H1
S/H2
S/H3
ABOUT
SAOUT
SAG
TDB
CC
5
GND
SRG3
SRG2
SRG1
TRG
ADB
100 Ω
100 Ω
100 Ω
9
6
4.7 µF
SH1
V
V
OUT3
OUT2
OUT1
AMPGND
GND
AGB+
CC
+
‡
10
7
V
V
DGTL V
CC
V
SS
AGB–
ABG–
8
4.7 µF
OUT1
‡
9
+
TMS3472A
OUT2
OUT3
IDB
10
11
1
2
20
19
18
17
16
15
14
13
12
11
CDB
SUB
+
CP2
DLADJ
GND
V
SS
100 pF
4.7 µF
ANLG GND DGTL GND
SUB
1PC2
1PC1
3
PD
4
SRG2,3IN
V
CC
100 Ω
100 Ω
5
OUT3
SRG1IN SRG3OUT
TRGIN SRG2OUT
2,3PC1 SRG1OUT
2,3PC2 TRGOUT
6
OUT2
OUT1
7
100 Ω
100 Ω
V
CC
8
V
CC
9
SSR
V
CC
22 21 20 19 18 17 16 15 14 13 12
10
V
TSR
SS
47 kΩ
23
24
25
26
27
28
29
30
31
32
33
11
10
9
47 kΩ
T
ABS2
ABS1
ABS0
SC (90)
SC
S1
S2, 3
PD
PS
8
7
6
TMS3471C
GT
BF
CBLK
CSYNC
CP1
5
ABIN
PI
4
1 kΩ
3
DC VOLTAGES
SH2, 3
SH1
SH2, 3
SH1
2
ADB
12 V
5 V
–10 V
2 V
CP2
1
1 kΩ
V
V
V
GND
BCP2
CC
SS
20 pF
34 35 36 37 38 39 40 41 42 43 44
ABLVL
IALVL
–2.5 V
–5 V
4 V
4.7 kΩ
Oscillator
14.3-MHz
V
CC
GT3
GT2
GT1
V
V
ABG+
ABG–
–6 V
15 pF
SUPPORT CIRCUITS
APPLICATION
Timing generator
Serial driver
DEVICE
PACKAGE
44 pin flatpack
FUNCTION
NTSC timing generator
TMS3471CFS
TMS3472ADW
TMS3473BDW
TL1593CNS
20 pin flatpack with tabs
20 pin small outline
Driver for SRG1, SRG2, SRG3, and TRG
Driver for ABG, IAG, and SAG
Parallel driver
16 pin small outline (EIAJ)
Sample and hold
Three-channel sample-and-hold IC
Figure 16. Typical Application Circuit Diagram
†
‡
Decoupling capacitors are not shown.
TI recommends designing AC coupled systems.
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC241
780- × 488-PIXEL CCD IMAGE SENSOR
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991
MECHANICAL DATA
The package for the TC241 consists of a ceramic base, a glass window, and a 22-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and
fit into mounting holes with 2.54 mm (0.10 in) center-to-center spacings.
TC241 (22 pin)
23,39 (0.921)
Optical Center
2,01 x 2,39
(0.079 x 0.094)
2,01 (0.079)
C
Optical
(see Note B)
L
18,24
(0.718)
9,35 (0.368)
REF
8,00 (0.315)
Index Dot
27,81 (1.095) MAX
18,54
MAX
3,86 (0.152) MAX
0,25 (0.010)
(0.730)
2,79 (0.110)
0,46 (0.018)
2,54 (0.100)
(see Note D)
5,50 ± 0,76
(0.217 ± 0.030)
10,16 (0.400) TYP
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES
7/94
NOTES: A. Single dimensions are nominal.
B. The center of the package and the center of the image area are not coincident.
C. The distance from the top of the glass to the image-sensor surface is typically 1,46 mm (0.057 in). The glass is 0,95 ±0,08 mm thick
and has an index of refraction of 1.53.
D. Each pin centerline is located within 0,25 mm (0.010 in) of its true longitudinal position.
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Copyright 1998, Texas Instruments Incorporated
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