TLC251CPSR [TI]

OP-AMP, 12000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, GREEN, SOP-8;
TLC251CPSR
型号: TLC251CPSR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

OP-AMP, 12000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, GREEN, SOP-8

放大器 光电二极管
文件: 总18页 (文件大小:270K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
D OR P PACKAGE  
(TOP VIEW)  
Wide Range of Supply Voltages  
1.4 V to 16 V  
True Single-Supply Operation  
OFFSET N1  
IN–  
BIAS SELECT  
1
2
3
4
8
7
6
5
Common-Mode Input Voltage Range  
Includes the Negative Rail  
V
DD  
IN+  
OUT  
OFFSET N2  
V
/GND  
Low Noise . . . 30 nV/Hz Typ at 1 kHz  
DD–  
(High Bias)  
ESD Protection Exceeds 2000 V Per  
MIL-STD-833C, Method 3015.1  
symbol  
description  
BIAS SELECT  
The TLC251C, TLC251AC, and TLC251BC are  
low-cost, low-power programmable operational  
amplifiers designed to operate with single or dual  
supplies. Unlike traditional metal-gate CMOS  
operational amplifiers, these devices utilize Texas  
+
IN+  
IN–  
OUT  
Instruments silicon-gate LinCMOS  
giving them stable input offset voltages without  
sacrificing the advantages of metal-gate CMOS.  
process,  
OFFSET N1  
OFFSET N2  
This series of parts is available in selected grades of input offset voltage and can be nulled with one external  
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption  
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A  
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the  
application. The series features operation down to a 1.4-V supply and is stable at unity gain.  
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures  
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised  
in handling these devices as exposure to ESD may result in a degradation of the device parametric  
performance.  
Because of the extremely high input impedance and low input bias and offset currents, applications for the  
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any  
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective  
use of these devices. Many features associated with bipolar technology are available with LinCMOS  
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible  
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.  
Inaddition, bydrivingthebias-selectinputwithalogicsignalfromamicroprocessor, theseoperationalamplifiers  
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve  
the difficult problems associated with single battery and solar cell-powered applications.  
The TLC251C series is characterized for operation from 0°C to 70°C.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
V
max  
CHIP FORM  
(Y)  
IO  
T
A
SMALL OUTLINE  
(D)  
PLASTIC DIP  
(P)  
AT 25°C  
10 mV  
5 mV  
2 mV  
TLC251CD  
TLC251ACD  
TLC251BCD  
TLC251CP  
TLC251ACP  
TLC251BCP  
TLC251Y  
0°C to 70°C  
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are  
tested at 25°C.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
schematic  
7
V
DD  
Current  
Control  
ESD-  
Protective  
Network  
8
BIAS  
SELECT  
ESD-  
Protective  
Network  
3
2
IN+  
IN–  
ESD-  
Protective  
Network  
6
OUT  
1
OFFSET  
N1  
5
4
OFFSET  
N2  
V
/GND  
DD–  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
TLC251Y chip information  
These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or  
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive  
epoxy or a gold-silicon preform.  
BONDING PAD ASSIGNMENTS  
V
DD  
(2)  
(1)  
(8)  
(7)  
(8)  
(7)  
BIAS SELECT  
IN+  
(3)  
(2)  
+
(6)  
OUT  
IN–  
(1)  
(5)  
OFFSET N1  
OFFSET N2  
(4)  
/GND  
48  
V
DD–  
CHIP THICKNESS: 15 TYPICAL  
BONDING PADS: 4 × 4 MINIMUM  
= 150°C  
T
JMAX  
(3)  
(5)  
(6)  
(4)  
TOLERANCES ARE ±10%.  
ALL DIMENSIONS ARE IN MILS.  
55  
PIN (4) IS INTERNALLY CONNECTED  
TO BACKSIDE OF CHIP.  
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)  
Supply voltage, V  
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V  
DD  
Differential input voltage, V (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V  
Input voltage range, V (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to 18 V  
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) . . . . . . . . . . . . . . . . . . unlimited  
ID  
I
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table  
Operating free-air temperature range, T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C  
A
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. All voltage values, except differential voltages, are with respect to V  
/GND.  
DD–  
2. Differential voltages are at IN+ with respect to IN.  
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation  
rating is not exceeded.  
DISSIPATION RATING TABLE  
T
25°C  
DERATING FACTOR  
T = 70°C  
A
POWER RATING  
A
PACKAGE  
POWER RATING  
ABOVE T = 25°C  
A
D
P
725 mW  
5.8 mW/°C  
8.0 mW/°C  
464 mW  
1000 mW  
640 mW  
recommended operating conditions  
MIN  
1.4  
MAX  
16  
0.2  
4
UNIT  
Supply voltage, V  
V
DD  
V
DD  
V
DD  
V
DD  
V
DD  
= 1.4 V  
= 5 V  
0
0.2  
0.2  
0.2  
0
Common-mode input voltage, V  
V
IC  
= 10 V  
= 16 V  
9
14  
70  
Operating free-air temperature, T  
°C  
A
See Application  
Information  
Bias-select voltage  
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
HIGH-BIAS MODE  
electrical characteristics at specified free-air temperature  
TLC251C, TLC251AC, TLC251BC  
TEST  
CONDITIONS  
PARAMETER  
V
= 5 V  
V
= 10 V  
TYP  
UNIT  
T
A
DD  
TYP  
DD  
MIN  
MAX  
10  
12  
5
MIN  
MAX  
10  
12  
5
25°C  
Full range  
25°C  
1.1  
1.1  
TLC251C  
V
V
R
R
= 1.4 V,  
= 0 V,  
= 50 ,  
= 10 kΩ  
O
IC  
S
L
0.9  
0.9  
V
IO  
Input offset voltage  
TLC251AC  
TLC251BC  
mV  
Full range  
25°C  
6.5  
2
6.5  
2
0.34  
1.8  
0.39  
Full range  
3
3
Average temperature coefficient of  
input offset voltage  
25°C to  
70°C  
α
2
µV/°C  
VIO  
25°C  
70°C  
25°C  
70°C  
0.1  
7
0.1  
7
V
V
= V /2,  
DD  
O
IC  
I
Input offset current (see Note 4)  
Input bias current (see Note 4)  
pA  
IO  
= V /2  
300  
600  
300  
600  
DD  
0.6  
40  
0.7  
50  
V
V
= V /2,  
DD  
O
IC  
I
IB  
pA  
V
= V /2  
DD  
0.2  
to  
0.3  
to  
0.2  
to  
0.3  
to  
25°C  
4
4.2  
9
9.2  
Common-mode input voltage  
range (see Note 5)  
V
ICR  
0.2  
to  
0.2  
to  
Full range  
V
V
3.5  
8.5  
25°C  
0°C  
3.2  
3
3.8  
3.8  
3.8  
0
8
7.8  
7.8  
8.5  
8.5  
8.4  
0
V
R
= 100 mV,  
= 10 kΩ  
ID  
L
V
V
High-level output voltage  
Low-level output voltage  
OH  
70°C  
25°C  
0°C  
3
50  
50  
50  
50  
50  
50  
V
= 100 mV,  
= 0  
ID  
0
0
mV  
V/mV  
dB  
OL  
I
OL  
70°C  
25°C  
0°C  
0
0
5
4
23  
10  
7.5  
7.5  
65  
60  
60  
65  
60  
60  
36  
Large-signal differential voltage  
amplification  
R
= 10 k,  
L
A
VD  
27  
42  
See Note 6  
70°C  
25°C  
0°C  
4
20  
32  
65  
60  
60  
65  
60  
60  
80  
85  
CMRR Common-mode rejection ratio  
V
= V  
min  
ICR  
84  
88  
IC  
70°C  
25°C  
0°C  
85  
88  
95  
95  
Supply-voltage rejection ratio  
V
V
= 5 V to 10 V,  
= 1.4 V  
DD  
O
k
94  
94  
dB  
µA  
µA  
SVR  
I(SEL)  
DD  
(V /V  
DD IO  
)
70°C  
25°C  
25°C  
0°C  
96  
96  
I
I
Input current (BIAS SELECT)  
Supply current  
V
= 0  
1.4  
675  
775  
575  
1.9  
950  
1125  
750  
I(SEL)  
1600  
1800  
1300  
2000  
2200  
1700  
V
V
= V /2,  
DD  
O
IC  
= V /2,  
DD  
No load  
70°C  
Full range is 0°C to 70°C.  
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.  
5. This range also applies to each input individually.  
6. At V  
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.  
DD  
O
DD O  
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
HIGH-BIAS MODE  
operating characteristics, V  
= 5 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
T
A
UNIT  
MIN  
TYP  
3.6  
4
MAX  
25°C  
0°C  
V
= 1 V  
I(PP)  
I(PP)  
70°C  
25°C  
0°C  
3
SR  
Slew rate at unity gain  
R
= 10 k,  
C
= 20 pF  
V/µs  
L
L
2.9  
3.1  
2.5  
25  
V
= 2.5 V  
70°C  
25°C  
25°C  
0°C  
V
B
Equivalent input noise voltage  
f = 1 kHz,  
R
C
= 20 Ω  
nV/Hz  
n
S
L
320  
340  
260  
1.7  
2
Maximum output-swing bandwidth  
Unity-gain bandwidth  
Phase margin  
V
O
= V ,  
OH  
= 20 pF,  
R
L
= 10 kΩ  
kHz  
OM  
70°C  
25°C  
0°C  
B
1
V = 10 mV,  
I
C
= 20 pF  
MHz  
L
70°C  
25°C  
0°C  
1.3  
46°  
47°  
44°  
φ
m
V = 10 mV,  
I
f = B ,  
C = 20 pF  
L
1
70°C  
operating characteristics, V  
= 10 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
T
A
UNIT  
MIN  
TYP  
5.3  
5.9  
4.3  
4.6  
5.1  
3.8  
25  
MAX  
25°C  
0°C  
V
= 1 V  
I(PP)  
I(PP)  
70°C  
25°C  
0°C  
SR  
Slew rate at unity gain  
R
= 10 k,  
C
= 20 pF  
V/µs  
L
L
V
= 5.5 V  
70°C  
25°C  
25°C  
0°C  
V
B
Equivalent input noise voltage  
f = 1 kHz,  
R
C
= 20 Ω  
nV/Hz  
n
S
L
200  
220  
140  
2.2  
2.5  
1.8  
49°  
50°  
46°  
Maximum output-swing bandwidth  
Unity-gain bandwidth  
Phase margin  
V
O
= V ,  
OH  
= 20 pF,  
R
L
= 10 kΩ  
kHz  
OM  
70°C  
25°C  
0°C  
B
1
V = 10 mV,  
I
C
= 20 pF  
MHz  
L
70°C  
25°C  
0°C  
φ
m
V = 10 mV,  
I
f = B ,  
C = 20 pF  
L
1
70°C  
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
MEDIUM-BIAS MODE  
electrical characteristics at specified free-air temperature  
TLC251C, TLC251AC, TLC251BC  
TEST  
CONDITIONS  
PARAMETER  
V
= 5 V  
V
= 10 V  
TYP  
UNIT  
T
A
DD  
TYP  
DD  
MIN  
MAX  
10  
12  
5
MIN  
MAX  
10  
12  
5
25°C  
Full range  
25°C  
1.1  
1.1  
TLC251C  
V
V
R
R
= 1.4 V,  
= 0 V,  
= 50 ,  
= 10 kΩ  
O
IC  
S
L
0.9  
0.9  
V
IO  
Input offset voltage  
TLC251AC  
TLC251BC  
mV  
Full range  
25°C  
6.5  
2
6.5  
2
0.34  
1.7  
0.39  
Full range  
3
3
Average temperature coefficient of  
input offset voltage  
25°C to  
70°C  
α
2.1  
µV/°C  
VIO  
25°C  
70°C  
25°C  
70°C  
0.1  
7
0.1  
7
V
V
= V /2,  
DD  
O
IC  
I
Input offset current (see Note 4)  
Input bias current (see Note 4)  
pA  
IO  
= V /2  
300  
600  
300  
600  
DD  
0.6  
40  
0.7  
50  
V
V
= V /2,  
DD  
O
IC  
I
IB  
pA  
V
= V /2  
DD  
0.2  
to  
0.3  
to  
0.2  
to  
0.3  
to  
25°C  
4
4.2  
9
9.2  
Common-mode input voltage  
range (see Note 5)  
V
ICR  
0.2  
to  
0.2  
to  
Full range  
V
V
3.5  
8.5  
25°C  
0°C  
3.2  
3
3.9  
3.9  
4
8
7.8  
7.8  
8.7  
8.7  
8.7  
0
V
R
= 100 mV,  
= 10 kΩ  
ID  
L
V
V
High-level output voltage  
Low-level output voltage  
OH  
70°C  
25°C  
0°C  
3
0
50  
50  
50  
50  
50  
50  
V
= 100 mV,  
= 0  
ID  
0
0
mV  
V/mV  
dB  
OL  
I
OL  
70°C  
25°C  
0°C  
0
0
25  
15  
15  
65  
60  
60  
70  
60  
60  
170  
200  
140  
91  
25  
15  
15  
65  
60  
60  
70  
60  
60  
275  
320  
230  
94  
Large-signal differential voltage  
amplification  
R
= 10 k,  
L
A
VD  
See Note 6  
70°C  
25°C  
0°C  
CMRR Common-mode rejection ratio  
V
= V  
min  
ICR  
91  
94  
IC  
70°C  
25°C  
0°C  
92  
94  
93  
93  
Supply-voltage rejection ratio  
V
V
= 5 V to 10 V,  
DD  
= 1.4 V  
O
k
92  
92  
dB  
nA  
µA  
SVR  
I(SEL)  
DD  
(V /V  
DD IO  
)
70°C  
25°C  
25°C  
0°C  
94  
94  
I
I
Input current (BIAS SELECT)  
Supply current  
V
= V /2  
DD  
130  
105  
125  
85  
160  
143  
173  
110  
I(SEL)  
280  
320  
220  
300  
400  
280  
V
V
= V /2,  
DD  
O
IC  
= V /2,  
DD  
No load  
70°C  
Full range is 0°C to 70°C.  
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.  
5. This range also applies to each input individually.  
6. At V  
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.  
DD  
O
DD O  
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
MEDIUM-BIAS MODE  
operating characteristics, V  
= 5 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
T
A
UNIT  
MIN  
TYP  
0.43  
0.46  
0.36  
0.40  
0.43  
0.34  
32  
MAX  
25°C  
0°C  
V
= 1 V  
I(PP)  
I(PP)  
70°C  
25°C  
0°C  
SR  
Slew rate at unity gain  
R
= 100 k,  
C
= 20 pF  
V/µs  
L
L
V
= 2.5 V  
70°C  
25°C  
25°C  
0°C  
V
B
Equivalent input noise voltage  
f = 1 kHz,  
R
C
= 20 Ω  
nV/Hz  
n
S
L
55  
Maximum output-swing bandwidth  
Unity-gain bandwidth  
Phase margin  
V
= V ,  
OH  
= 20 pF,  
R
L
= 100 kΩ  
60  
kHz  
OM  
O
70°C  
25°C  
0°C  
50  
525  
600  
400  
40°  
41°  
39°  
B
1
V = 10 mV,  
I
C
= 20 pF  
kHz  
L
70°C  
25°C  
0°C  
φ
m
V = 10 mV,  
I
f = B ,  
C = 20 pF  
L
1
70°C  
operating characteristics, V  
= 10 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
T
A
UNIT  
MIN  
TYP  
0.62  
0.67  
0.51  
0.56  
0.61  
0.46  
32  
MAX  
25°C  
0°C  
V
= 1 V  
I(PP)  
I(PP)  
70°C  
25°C  
0°C  
SR  
Slew rate at unity gain  
R
= 100 k,  
C
= 20 pF  
V/µs  
L
L
V
= 5.5 V  
70°C  
25°C  
25°C  
0°C  
V
B
Equivalent input noise voltage  
f = 1 kHz,  
R
C
= 20 Ω  
nV/Hz  
n
S
L
35  
Maximum output-swing bandwidth  
Unity-gain bandwidth  
Phase margin  
V
= V ,  
OH  
= 20 pF,  
R
L
= 100 kΩ  
40  
kHz  
OM  
O
70°C  
25°C  
0°C  
30  
635  
710  
510  
43°  
44°  
42°  
B
1
V = 10 mV,  
I
C
= 20 pF  
kHz  
L
70°C  
25°C  
0°C  
φ
m
V = 10 mV,  
I
f = B ,  
C = 20 pF  
L
1
70°C  
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
LOW-BIAS MODE  
electrical characteristics at specified free-air temperature  
TLC251C, TLC251AC, TLC251BC  
TEST  
CONDITIONS  
PARAMETER  
V
= 5 V  
V
= 10 V  
TYP  
UNIT  
T
A
DD  
TYP  
DD  
MIN  
MAX  
10  
12  
5
MIN  
MAX  
10  
12  
5
25°C  
Full range  
25°C  
1.1  
1.1  
TLC251C  
V
V
R
R
= 1.4 V,  
= 0 V,  
= 50 ,  
= 10 MΩ  
O
IC  
S
L
0.9  
0.9  
V
IO  
Input offset voltage  
TLC251AC  
TLC251BC  
mV  
Full range  
25°C  
6.5  
2
6.5  
2
0.24  
1.1  
0.26  
Full range  
3
3
Average temperature coefficient of  
input offset voltage  
25°C to  
70°C  
α
1
µV/°C  
VIO  
25°C  
70°C  
25°C  
70°C  
0.1  
7
0.1  
7
V
V
= V /2,  
DD  
O
IC  
I
Input offset current (see Note 4)  
Input bias current (see Note 4)  
pA  
IO  
= V /2  
300  
600  
300  
600  
DD  
0.6  
40  
0.7  
50  
V
V
= V /2,  
DD  
O
IC  
I
IB  
pA  
V
= V /2  
DD  
0.2  
to  
0.3  
to  
0.2  
to  
0.3  
to  
25°C  
4
4.2  
9
9.2  
Common-mode input voltage  
range (see Note 5)  
V
ICR  
0.2  
to  
0.2  
to  
Full range  
V
V
3.5  
8.5  
25°C  
0°C  
3.2  
3
4.1  
4.1  
4.2  
0
8
7.8  
7.8  
8.9  
8.9  
8.9  
0
V
R
= 100 mV,  
= 1 MΩ  
ID  
L
V
V
High-level output voltage  
Low-level output voltage  
OH  
70°C  
25°C  
0°C  
3
50  
50  
50  
50  
50  
50  
V
= 100 mV,  
= 0  
ID  
0
0
mV  
V/mV  
dB  
OL  
I
OL  
70°C  
25°C  
0°C  
0
0
50  
50  
50  
65  
60  
60  
70  
60  
60  
520  
700  
380  
94  
95  
95  
97  
97  
98  
65  
10  
12  
8
50  
50  
50  
65  
60  
60  
70  
60  
60  
870  
1030  
660  
97  
Large-signal differential voltage  
amplification  
R
= 1 M,  
L
A
VD  
See Note 6  
70°C  
25°C  
0°C  
CMRR Common-mode rejection ratio  
V
= V  
min  
ICR  
97  
IC  
70°C  
25°C  
0°C  
97  
97  
Supply-voltage rejection ratio  
V
V
= 5 V to 10 V,  
DD  
= 1.4 V  
O
k
97  
dB  
nA  
µA  
SVR  
I(SEL)  
DD  
(V /V  
DD IO  
)
70°C  
25°C  
25°C  
0°C  
98  
I
I
Input current (BIAS SELECT)  
Supply current  
V
= V  
95  
I(SEL)  
DD  
17  
21  
14  
14  
23  
33  
20  
V
V
= V /2,  
DD  
O
IC  
= V /2,  
18  
DD  
No load  
70°C  
11  
Full range is 0°C to 70°C.  
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.  
5. This range also applies to each input individually.  
6. At V  
= 5 V, V = 0.25 V to 2 V; at V = 10 V, V = 1 V to 6 V.  
DD  
O
DD O  
9
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
LOW-BIAS MODE  
operating characteristics, V  
= 5 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
T
A
UNIT  
MIN  
TYP  
0.03  
0.04  
0.03  
0.03  
0.03  
0.02  
68  
MAX  
25°C  
0°C  
V
= 1 V  
I(PP)  
I(PP)  
70°C  
25°C  
0°C  
SR  
Slew rate at unity gain  
R
= 1 M,  
C
= 20 pF  
V/µs  
L
L
V
= 2.5 V  
70°C  
25°C  
25°C  
0°C  
V
B
Equivalent input noise voltage  
f = 1 kHz,  
R
C
= 20 Ω  
nV/Hz  
n
S
L
5
Maximum output-swing bandwidth  
Unity-gain bandwidth  
Phase margin  
V
= V ,  
OH  
= 20 pF,  
R
L
= 1 MΩ  
6
kHz  
OM  
O
70°C  
25°C  
0°C  
4.5  
85  
B
1
V = 10 mV,  
I
C
= 20 pF  
100  
65  
kHz  
L
70°C  
25°C  
0°C  
34°  
36°  
30°  
φ
m
V = 10 mV,  
I
f = B ,  
C = 20 pF  
L
1
70°C  
operating characteristics, V  
= 10 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
T
A
UNIT  
MIN  
TYP  
0.05  
0.05  
0.04  
0.04  
0.05  
0.04  
68  
MAX  
25°C  
0°C  
V
= 1 V  
I(PP)  
I(PP)  
70°C  
25°C  
0°C  
SR  
Slew rate at unity gain  
R
= 1 M,  
C
= 20 pF  
V/µs  
L
L
V
= 5.5 V  
70°C  
25°C  
25°C  
0°C  
V
B
Equivalent input noise voltage  
f = 1 kHz,  
R
C
= 20 Ω  
nV/Hz  
n
S
L
1
Maximum output-swing bandwidth  
Unity-gain bandwidth  
Phase margin  
V
= V ,  
OH  
= 20 pF,  
R
L
= 1 MΩ  
1.3  
kHz  
OM  
O
70°C  
25°C  
0°C  
0.9  
110  
125  
90  
B
1
V = 10 mV,  
I
C
= 20 pF  
kHz  
L
70°C  
25°C  
0°C  
38°  
40°  
34°  
φ
m
V = 10 mV,  
I
f = B ,  
C = 20 pF  
L
1
70°C  
10  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
electrical characteristics at specified free-air temperature, V  
= 1.4 V  
DD  
TLC251C, TLC251AC,  
TLC251BC  
TEST CONDITIONS  
T
A
PARAMETER  
BIAS  
UNIT  
MIN  
TYP  
MAX  
10  
12  
5
25°C  
Full range  
25°C  
TLC251C  
Any  
Any  
Any  
Input offset  
voltage  
V
IO  
TLC251AC  
TLC251BC  
V
O
= 0.2 V,  
R
= 50 Ω  
mV  
S
Full range  
25°C  
6.5  
2
Full range  
3
Average temperature  
coefficient of input offset  
voltage  
α
25°C to 70°C  
Any  
1
1
µV/°C  
VIO  
25°C  
Full range  
25°C  
I
I
Input offset current  
Input bias current  
V
V
= 0.2 V  
= 0.2 V  
Any  
Any  
pA  
pA  
IO  
O
300  
600  
1
IB  
O
Full range  
0
to  
0.2  
Common-mode input  
voltage range  
V
V
25°C  
Any  
Any  
V
ICR  
Peak output voltage  
V
V
= 100 mV  
25°C  
25°C  
25°C  
25°C  
450  
700  
mV  
OM  
ID  
§
swing  
Low  
20  
10  
Large-signal differential  
voltage amplification  
A
VD  
= 100 to 300 mV,  
R
= 50 Ω  
O
S
High  
Common-mode rejection  
ratio  
R
V
= 50 ,  
V
O
= 0.2 V,  
S
IC  
CMRR  
Any  
60  
77  
dB  
= V  
min  
ICR  
Low  
5
17  
I
Supply current  
V
O
= 0.2 V,  
No load  
µA  
DD  
High  
150  
190  
Allcharacteristicsaremeasuredunderopen-loopconditionswithzerocommon-modeinputvoltageunlessotherwisespecified. Unlessotherwise  
noted, an output load resistor is connected from the output to ground and has the following values: for low bias, R = 1 M, for medium bias,  
L
R
= 100 k, and for high bias, R = 10 k.  
L
L
§
Full range is 0°C to 70°C.  
The output swings to the potential of V  
/GND.  
DD–  
operating characteristics, V  
= 1.4 V, T = 25°C  
A
DD  
TLC251C, TLC251AC,  
TLC251BC  
PARAMETER  
TEST CONDITIONS  
BIAS  
UNIT  
MIN  
TYP  
12  
MAX  
Low  
High  
Low  
High  
Low  
High  
B
Unity-gain bandwidth  
C
= 100 pF  
L
kHz  
1
12  
0.001  
0.1  
SR  
Slew rate at unity gain  
Overshoot factor  
See Figure 1  
See Figure 1  
V/µs  
35%  
30%  
11  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
electrical characteristics, V  
= 5 V, T = 25°C  
A
DD  
TLC251Y  
HIGH-BIAS  
MODE  
MEDIUM-BIAS  
MODE  
LOW-BIAS  
MODE  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN TYP MAX  
MIN  
TYP MAX MIN  
TYP MAX  
V
V
R
= 1.4 V,  
= 0 V,  
= 50 ,  
O
IC  
S
V
Input offset voltage  
1.1  
10  
1.1  
1.7  
10  
1.1  
1.1  
10  
mV  
IO  
R
L
Average temperature  
coefficient of input  
offset voltage  
α
1.8  
0.1  
µV/°C  
VIO  
Input offset current  
(see Note 4)  
V
O
V
= V /2,  
DD  
I
I
0.1  
0.6  
0.1  
0.6  
pA  
pA  
IO  
= V /2  
IC  
DD  
Input bias current  
(see Note 4)  
V
O
V
= V /2,  
DD  
0.6  
IB  
= V /2  
IC  
DD  
Common-mode input  
voltage range  
(see Note 5)  
0.2 0.3  
0.2  
to  
0.3  
to  
4.2  
0.2  
to  
0.3  
to  
4.2  
to  
to  
V
ICR  
V
4
4.2  
4
4
High-level output  
voltage  
V
R
= 100 mV,  
ID  
L
V
V
3.2  
3.8  
0
3.2  
3.9  
0
3.2  
4.1  
0
V
OH  
Low-level output  
voltage  
V
= 100 mV,  
= 0  
ID  
50  
50  
50  
mV  
OL  
I
OL  
Large-signal  
differential voltage  
amplification  
V
R
= 0.25 V,  
O
L
A
5
65  
65  
23  
80  
25  
65  
70  
170  
91  
50  
65  
70  
480  
94  
V/mV  
dB  
VD  
Common-mode  
rejection ratio  
CMRR  
V
= V  
min  
IC  
ICR  
Supply-voltage  
rejection ratio  
V
V
= 5 V to 10 V,  
= 1.4 V  
DD  
O
k
95  
93  
97  
dB  
SVR  
I(SEL)  
DD  
(V  
DD  
/V )  
IO  
Input current  
I
I
V
= V /2  
DD  
1.4  
0.13  
105  
0.065  
10  
µA  
I(SEL)  
(BIAS SELECT)  
Supply current  
V
O
V
= V /2,  
DD  
= V /2,  
675 1600  
280  
17  
µA  
IC  
DD  
No load  
For high-bias mode, R = 10 k; for medium-bias mode, R = 100 k; and for low-bias mode, R = 1 M.  
L
L
L
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.  
5. This range also applies to each input individually.  
12  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
operating characteristics, V  
= 5 V, T = 25°C  
A
DD  
TLC251Y  
HIGH-BIAS  
MODE  
MEDIUM-BIAS  
MODE  
LOW-BIAS  
MODE  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN TYP MAX  
MIN  
TYP MAX MIN  
TYP MAX  
V
V
= 1 V  
3.6  
2.9  
0.43  
0.40  
0.03  
0.03  
Slew rate at  
unity gain  
I(PP)  
R
C
,
L
L
SR  
V/µs  
= 20 pF  
= 2.5 V  
I(PP)  
Equivalent input  
noise voltage  
V
B
B
f = 1 kHz,  
R
C
= 20 Ω  
25  
320  
32  
55  
68  
4.5  
65  
nV/Hz  
kHz  
n
S
L
Maximum output  
swing bandwidth  
V
R
= V  
OH  
= 10 kΩ  
,
= 20 pF,  
O
L
OM  
1
Unity-gain  
bandwidth  
V = 10 mV,  
I
C
= 20 pF  
1700  
46°  
525  
40°  
kHz  
L
f = B ,  
V = 10 mV,  
I
1
φ
m
Phase margin  
34°  
C
= 20 pF  
L
For high-bias mode, R = 10 k; for medium-bias mode, R = 100 k; and for low-bias mode, R = 1 M.  
L
L
L
PARAMETER MEASUREMENT INFORMATION  
IN–  
IN+  
+
+
Output  
N2  
Output  
Input  
BIAS  
N1  
R
L
C
= 100 pF  
L
R
L
Low  
Medium  
High  
1 MΩ  
100 kΩ  
10 kΩ  
25 kΩ  
GND  
Figure 1. Unity-Gain Amplifier  
Figure 2. Input Offset Voltage Null Circuit  
TYPICAL CHARACTERISTICS  
Table of Graphs  
FIGURE  
vs Bias-select voltage  
vs Supply voltage  
vs Free-air temperature  
3
4
5
I
Supply current  
DD  
Low bias  
vs Frequency  
6
7
8
6
7
8
A
VD  
Large-signal differential voltage amplification Medium bias vs Frequency  
High bias  
Low bias  
vs Frequency  
vs Frequency  
Phase shift  
Medium bias vs Frequency  
High bias vs Frequency  
13  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
TYPICAL CHARACTERISTICS  
SUPPLY CURRENT  
vs  
SUPPLY CURRENT  
vs  
SUPPLY VOLTAGE  
BIAS-SELECT VOLTAGE  
10000  
1000  
100  
10  
10000  
1000  
100  
V
= V = 0.2 V  
IC DD  
V
= V = 0.2 V  
IC  
O
O
DD  
No Load  
= 25°C  
No Load  
= 25°C  
High-Bias Versions  
T
T
A
A
Medium-Bias Versions  
V
DD  
= 16 V  
V
DD  
= 4 V  
Low-Bias Versions  
V
DD  
= 1.4 V  
10  
1
0
0
2
4
6
8
10 12 14 16 18 20  
0.1  
1
10  
100  
V
B
– Bias-Select Voltage – V  
V
DD  
– Supply Voltage – V  
Figure 3  
Figure 4  
SUPPLY CURRENT  
vs  
FREE-AIR TEMPERATURE  
10000  
1000  
100  
V
V
V
= 10 V  
= 0 V  
= 2 V  
DD  
IC  
O
High-Bias Versions  
No Load  
Medium-Bias Versions  
Low-Bias Versions  
10  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
T
A
– Free-Air Temperature – °C  
Figure 5  
14  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
TYPICAL CHARACTERISTICS  
LOW-BIAS LARGE-SIGNAL  
DIFFERENTIAL VOLTAGE AMPLIFICATION  
AND PHASE SHIFT  
vs  
FREQUENCY  
7
6
5
4
10  
10  
10  
10  
V
R
T
A
= 10 V  
= 1 MΩ  
= 25°C  
DD  
L
0°  
30°  
60°  
A
(left scale)  
VD  
3
2
10  
90°  
Phase Shift  
(right scale)  
10  
120°  
1
10  
150°  
180°  
1
0.1  
0.1  
1
10  
100  
1 k  
10 k  
100 k  
Frequency – Hz  
Figure 6  
MEDIUM-BIAS LARGE-SIGNAL  
DIFFERENTIAL VOLTAGE AMPLIFICATION  
AND PHASE SHIFT  
vs  
FREQUENCY  
7
10  
6
10  
5
10  
4
10  
V
R
T
A
= 10 V  
= 100 kΩ  
= 25°C  
DD  
L
0°  
30°  
60°  
A
(left scale)  
VD  
3
2
10  
90°  
Phase Shift  
(right scale)  
10  
120°  
1
10  
150°  
180°  
1
0.1  
1
10  
100  
1 k  
10 k  
100 k  
1 M  
Frequency – Hz  
Figure 7  
15  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
TYPICAL CHARACTERISTICS  
HIGH-BIAS LARGE-SIGNAL  
DIFFERENTIAL VOLTAGE AMPLIFICATION  
AND PHASE SHIFT  
vs  
FREQUENCY  
7
10  
6
10  
5
10  
4
10  
V
R
T
A
= 10 V  
= 10 kΩ  
= 25°C  
DD  
L
0°  
30°  
60°  
Phase Shift (right scale)  
3
2
10  
90°  
10  
120°  
A
VD  
(left scale)  
1
10  
150°  
180°  
1
0.1  
10  
100  
1 k  
10 k  
100 k  
1 M  
10 M  
Frequency – Hz  
Figure 8  
APPLICATION INFORMATION  
latch-up avoidance  
Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under  
certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current.  
To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin.  
In general, the operational amplifier supplies should be applied simultaneously with, or before, application of  
any input signals.  
16  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
APPLICATION INFORMATION  
using BIAS SELECT  
The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three I  
150, and 1000 µA typical). This allows the user to trade-off power and ac performance. As shown in the typical  
conditions (10,  
DD  
supply current (I ) versus supply voltage (V ) curves (Figure 4), the I varies only slightly from 4 V to 16  
DD  
DD  
DD  
DD  
V. Below 4 V, the I  
varies more significantly. Note that the I  
values in the medium- and low-bias modes at  
DD  
V
= 1.4 V are typically 2 µA, and in the high mode are typically 12 µA. The following table shows the  
recommended BIAS SELECT connections at V  
DD  
= 10 V.  
DD  
BIAS SELECT  
CONNECTION  
BIAS MODE  
AC PERFORMANCE  
TYPICAL I  
DD  
Low  
Medium  
High  
Low  
Medium  
High  
V
10 µA  
150 µA  
1000 µA  
DD  
0.8 V to 9.2 V  
Ground pin  
Bias selection may also be controlled by external circuitry to conserve power, etc.  
For information regarding BIAS SELECT, see Figure 3 in the typical  
characteristics curves.  
For I  
characteristics at voltages other than 10 V, see Figure 4 in the typical  
DD  
characteristics curves.  
output stage considerations  
The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain  
pulldown transistor. The high-level output voltage (V ) is virtually independent of the I  
selection and  
OH  
DD  
increases with higher values of V and reduced output loading. The low-level output voltage (V ) decreases  
DD  
OL  
with reduced output current and higher input common-mode voltage. With no load, V is essentially equal to  
OL  
the potential of V  
/GND.  
DD–  
input offset nulling  
The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-kΩ  
potentiometer connected between the offset null terminals with the wiper connected to the device V /GND  
DD–  
pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an I  
setting of  
DD  
1000 µA (high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or  
medium bias or when the amplifier is used below 4 V, total nulling may not be possible for all units.  
supply configurations  
Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a  
split-supply configuration when the input common-mode voltage (V  
supply voltage limits are not exceeded.  
), output swing (V  
and V ), and  
ICR  
OL OH  
circuit layout precautions  
The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in  
layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive  
dc leakages.  
17  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1998, Texas Instruments Incorporated  

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