TLC372_V01 [TI]
LinCMOS DUAL DIFFERENTIAL COMPARATORS;型号: | TLC372_V01 |
厂家: | TEXAS INSTRUMENTS |
描述: | LinCMOS DUAL DIFFERENTIAL COMPARATORS |
文件: | 总29页 (文件大小:1583K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
TLC372C, TLC372I, TLC372M, TLC372Q
D, P, OR PW PACKAGE
TLC372M . . . JG PACKAGE
(TOP VIEW)
D
D
D
D
D
D
D
Single or Dual-Supply Operation
Wide Range of Supply Voltages 2 V to 18 V
Low Supply Current Drain
150 µA Typ at 5 V
Fast Response Time . . . 200 ns Typ for
TTL-Level Input Step
1OUT
1IN−
1IN+
GND
V
CC
1
2
3
4
8
7
6
5
2OUT
2IN−
2IN+
Built-in ESD Protection
12
High Input Impedance . . . 10 Ω Typ
Extremely Low Input Bias Current
5 pA Typ
TLC372M . . . FK PACKAGE
(TOP VIEW)
D
Ultrastable Low Input Offset Voltage
D
Input Offset Voltage Change at Worst-Case
Input Conditions Typically 0.23 µV/Month,
Including the First 30 Days
3
2
1
20 19
18
NC
NC
1IN−
NC
4
5
6
7
8
D
D
D
Common-Mode Input Voltage Range
Includes Ground
2OUT
NC
17
16
15
14
Output Compatible With TTL, MOS, and
CMOS
2IN−
NC
1IN+
NC
9 10 11 12 13
Pin-Compatible With LM393
description
This device is fabricated using LinCMOS
technology and consists of two independent
voltage comparators, each designed to operate
from a single power supply. Operation from dual
supplies is also possible if the difference between
the two supplies is 2 V to 18 V. Each device
features extremely high input impedance
NC − No internal connection
TLC372M
U PACKAGE
(TOP VIEW)
NC
1OUT
1IN−
NC
1
2
3
4
5
10
9
12
(typically greater than 10 Ω), allowing direct
V
CC
interfacing with high-impedance sources. The
outputs are n-channel open-drain configurations
and can be connected to achieve positive-logic
wired-AND relationships.
8
2OUT
2IN−
2IN+
1IN+
7
6
GND
The TLC372 has internal electrostatic discharge
(ESD) protection circuits and has been classified
with a 1000-V ESD rating using human body
model testing. However, care should be exercised
in handling this device as exposure to ESD may
result in a degradation of the device parametric
performance.
symbol (each comparator)
IN+
OUT
IN −
The TLC372C is characterized for operation from 0°C to 70°C. The TLC372I is characterized for operation from
−40°C to 85°C. The TLC372M is characterized for operation over the full military temperature range of −55°C
to 125°C. The TLC372Q is characterized for operation from −40°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated. All other trademarks are the property of their respective owners.
ꢓꢑ ꢉ ꢋꢌ ꢂ ꢀꢎ ꢉ ꢒ ꢋ ꢍꢀꢍ ꢆꢇ ꢔ ꢕꢖ ꢗ ꢘꢙ ꢆꢕꢇ ꢆꢚ ꢛꢜ ꢖ ꢖ ꢝꢇꢙ ꢘꢚ ꢕꢔ ꢞꢜꢟ ꢠꢆꢛ ꢘꢙ ꢆꢕꢇ ꢡꢘ ꢙꢝ ꢢ
ꢓꢖ ꢕ ꢡꢜꢛ ꢙ ꢚ ꢛ ꢕꢇ ꢔꢕ ꢖ ꢗ ꢙ ꢕ ꢚ ꢞꢝ ꢛ ꢆꢔ ꢆꢛꢘ ꢙꢆ ꢕꢇꢚ ꢞꢝ ꢖ ꢙꢣ ꢝ ꢙꢝ ꢖ ꢗꢚ ꢕꢔ ꢀꢝꢤ ꢘꢚ ꢎꢇꢚ ꢙꢖ ꢜꢗ ꢝꢇꢙ ꢚ
ꢚ ꢙ ꢘ ꢇꢡ ꢘ ꢖꢡ ꢥ ꢘ ꢖꢖ ꢘ ꢇ ꢙꢦꢢ ꢓꢖ ꢕ ꢡꢜꢛ ꢙꢆꢕꢇ ꢞꢖ ꢕꢛ ꢝꢚ ꢚꢆ ꢇꢧ ꢡꢕꢝ ꢚ ꢇꢕꢙ ꢇꢝ ꢛꢝ ꢚꢚ ꢘꢖ ꢆꢠ ꢦ ꢆꢇꢛ ꢠꢜꢡ ꢝ
ꢙ ꢝ ꢚ ꢙꢆ ꢇꢧ ꢕꢔ ꢘ ꢠꢠ ꢞꢘ ꢖ ꢘ ꢗ ꢝ ꢙ ꢝ ꢖ ꢚ ꢢ
Copyright 1983−2008, Texas Instruments Incorporated
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
equivalent schematic (each comparator)
Common to All Channels
V
DD
OUT
GND
IN +
IN −
(1)
AVAILABLE OPTIONS
PACKAGED DEVICES
V
max
IO
SMALL
CHIP
CARRIER
(FK)
CERAMIC
DIP
PLASTIC
DIP
CERAMIC
FLAT PACK
(U)
T
A
TSSOP
(PW)
AT 25°C
OUTLINE
(2)
(D)
(JG)
(P)
0°C to 70°C
−40°C to 85°C
−55°C to 125°C
−40°C to 125°C
5 mV
5 mV
5 mV
5 mV
TLC372CD
TLC372ID
TLC372MD
TLC372QD
—
—
TLC372CP
TLC372IP
TLC372MP
TLC372QP
TLC372CPW
—
—
TLC372MFK
—
—
TLC372MJG
—
—
—
—
—
TLC372MU
—
1.For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web
site at www.ti.com.
2.The D packages are available taped and reeled. Add R suffix to device type (e.g., TLC372CDR).
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
(see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
DD
Differential input voltage, V (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Input voltage range, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 18 V
ID
I
Output voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
O
Input current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA
I
Output current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
O
Duration of output short circuit to ground (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Package thermal impedance, θ (see Notes 6 and 7): D package . . . . . . . . . . . . . . . . . . . . . . . . . . 97.1°C/W
JA
P package . . . . . . . . . . . . . . . . . . . . . . . . . . 84.6°C/W
PW package . . . . . . . . . . . . . . . . . . . . . . . . . 149°C/W
Package thermal impedance, θ (see Notes 6 and 7): FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.6°C/W
JC
JG package . . . . . . . . . . . . . . . . . . . . . . . . . 14.5°C/W
U package . . . . . . . . . . . . . . . . . . . . . . . . . . 14.7°C/W
Operating free-air temperature range, T : TLC372C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
A
TLC372I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 85°C
TLC372M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55°C to 125°C
TLC372Q . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG or U package . . . . . . . . . . . . . . . 300°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 3. All voltage values except differential voltages are with respect to network ground.
4. Differential voltages are at IN+ with respect to IN −.
5. Short circuits from outputs to V
can cause excessive heating and eventual device destruction.
DD
6. Maximum power dissipation is a function of T (max), θ , and T . The maximum allowable power dissipation at any allowable
JA
J
A
ambient temperature is P = (T (max) − T )/θ . Operating at the absolute maximum T of 150°C can affect reliability.
D
J
A
JA
J
7. The package thermal impedance is calculated in accordance with JESD 51-7 (plastic) or MIL-STD-883 Method 1012 (ceramic).
recommended operating conditions
TLC372C
TLC372I
TLC372M
TLC372Q
UNIT
MIN
3
MAX
MIN
3
MAX
MIN
4
MAX
MIN
4
MAX
Supply voltage, V
DD
16
3.5
8.5
70
16
3.5
8.5
85
16
3.5
8.5
125
16
3.5
8.5
125
V
V
V
= 5 V
0
0
0
0
DD
Common-mode input voltage, V
IC
V
= 10 V
0
0
0
0
DD
Operating free-air temperature, T
0
−40
−55
−40
°C
A
3
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Template Release Date: 7−11−94
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
4
•
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
electrical characteristics at specified free-air temperature, V
noted)
= 5 V, T = 25°C (unless otherwise
DD
A
TLC372Y
†
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
V
Input offset voltage
V
IC
= V
ICR
min, See Note 4
1
1
5
5
mV
pA
pA
IO
I
I
Input offset current
Input bias current
IO
IB
0 to
−1
V
ICR
Common-mode input voltage range
V
V
DD
I
High-level output current
Low-level output voltage
Low-level output current
V
ID
V
ID
V
ID
V
ID
= 1 V,
V
= 5 V
0.1
150
16
nA
mV
mA
µA
OH
OH
= 4 mA
V
= −1 V,
= −1 V,
= 1 V,
I
400
300
OL
OL
I
I
V
= 1.5 V
6
OL
OL
No load
Supply current (two comparators)
150
DD
†
All characteristics are measured with zero common-mode input voltage unless otherwise noted. IMPORTANT: See Parameter Measurement
Information.
NOTE 4: The offset voltage limits given are the maximum values required to drive the output above 4 V or below 400 mV with a 10-kΩ resistor
between the output and V . They can be verified by applying the limit value to the input and checking for the appropriate output state.
DD
PARAMETER MEASUREMENT INFORMATION
The digital output stage of the TLC372 can be damaged if it is held in the linear region of the transfer curve.
Conventional operational amplifier/comparator testing incorporates the use of a servo loop that is designed to force
the device output to a level within this linear region. Since the servo-loop method of testing cannot be used, the
following alternatives for measuring parameters such as input offset voltage, common-mode rejection, etc., are
offered.
To verify that the input offset voltage falls within the limits specified, the limit value is applied to the input as shown
in Figure 1(a). With the noninverting input positive with respect to the inverting input, the output should be high. With
the input polarity reversed, the output should be low.
A similar test can be made to verify the input offset voltage at the common-mode extremes. The supply voltages can
be slewed as shown in Figure 1(b) for the V
accuracy.
test, rather than changing the input voltages, to provide greater
ICR
5 V
1 V
5.1 kΩ
5.1 kΩ
+
−
+
−
Applied V
Limit
IO
Applied V
Limit
IO
V
O
V
O
−4 V
(a) V WITH V = 0
IO IC
(b) V WITH V = 4 V
IO IC
Figure 1. Method for Verifying That Input Offset Voltage is Within Specified Limits
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
PARAMETER MEASUREMENT INFORMATION
A close approximation of the input offset voltage can be obtained by using a binary search method to vary the
differential input voltage while monitoring the output state. When the applied input voltage differential is equal, but
opposite in polarity, to the input offset voltage, the output changes states.
Figure 2 illustrates a practical circuit for direct dc measurement of input offset voltage that does not bias the
comparator into the linear region. The circuit consists of a switching-mode servo loop in which U1a generates a
triangular waveform of approximately 20-mV amplitude. U1b acts as a buffer, with C2 and R4 removing any residual
dc offset. The signal is then applied to the inverting input of the comparator under test, while the noninverting input
is driven by the output of the integrator formed by U1c through the voltage divider formed by R9 and R10. The loop
reaches a stable operating point when the output of the comparator under test has a duty cycle of exactly 50%, which
can only occur when the incoming triangle wave is sliced symmetrically or when the voltage at the noninverting input
exactly equals the input offset voltage.
Voltage divider R9 and R10 provides a step up of the input offset voltage by a factor of 100 to make measurement
easier. The values of R5, R8, R9, and R10 can significantly influence the accuracy of the reading; therefore, it is
suggested that their tolerance level be 1% or lower.
Measuring the extremely low values of input current requires isolation from all other sources of leakage current and
compensation for the leakage of the test socket and board. With a good picoammeter, the socket and board leakage
can be measured with no device in the socket. Subsequently, this open-socket leakage value can be subtracted from
the measurement obtained with a device in the socket to obtain the actual input current of the device.
C3
0.68 µF
V
DD
R5
1.8 kΩ, 1%
U1b
1/4 TLC274C
C2
1 µF
U1c
1/4 TLC274CN
R6
5.1 kΩ
Buffer
+
−
−
+
DUT
R7
1 MΩ
V
IO
(X100)
R4
47 kΩ
R1
240 kΩ
R8
1.8 kΩ, 1%
Integrator
C4
0.1 µF
U1a
−
+
1/4 TLC274CN
C1
0.1 µF
Triangle
Generator
R9
10 kΩ, 1%
R10
100 Ω, 1%
R2
10 kΩ
R3
100 kΩ
Figure 2. Circuit for Input Offset Voltage Measurement
6
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
PARAMETER MEASUREMENT INFORMATION
Response time is defined as the interval between the application of an input step function and the instant when the
output reaches 50% of its maximum value. Response time, low-to-high level output, is measured from the leading
edge of the input pulse, while response time, high-to-low level output, is measured from the trailing edge of the input
pulse. Response-time measurement at low input signal levels can be greatly affected by the input offset voltage. The
offset voltage should be balanced by the adjustment at the inverting input as shown in Figure 3, so that the circuit
is just at the transition point. Then a low signal, for example 105-mV or 5-mV overdrive, causes the output to change
state.
V
DD
1 µF
5.1 kΩ
Pulse
Generator
DUT
50 Ω
C
1 V
L
(see Note A)
Input Offset Voltage
Compensation Adjustment
10 Ω
10 Turn
1 kΩ
−1 V
0.1 µF
TEST CIRCUIT
Overdrive
100 mV
Input
Overdrive
Input
100 mV
90%
50%
10%
90%
50%
Low-to-High-
Level Output
High-to-Low-
Level Output
10%
t
t
f
r
t
t
PLH
PHL
VOLTAGE WAVEFORMS
NOTE A: C includes probe and jig capacitance.
L
Figure 3. Response, Rise, and Fall Times Circuit and Voltage Waveforms
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
PRINCIPLES OF OPERATION
LinCMOS process
The LinCMOS process is a Linear polysilicon-gate complementary-MOS process. Primarily designed for
single-supply applications, LinCMOS products facilitate the design of a wide range of high-performance
analog functions, from operational amplifiers to complex mixed-mode converters.
While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers.
This short guide is intended to answer the most frequently asked questions related to the quality and reliability
of LinCMOS products. Further questions should be directed to the nearest Texas Instruments field sales office.
electrostatic discharge
CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only
for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to
CMOS devices. It can occur when a device is handled without proper consideration for environmental
electrostatic charges, e.g. during board assembly. If a circuit in which one amplifier from a dual operational
amplifier is being used and the unused pins are left open, high voltages tends to develop. If there is no provision
for ESD protection, these voltages may eventually punch through the gate oxide and cause the device to fail.
To prevent voltage buildup, each pin is protected by internal circuitry.
Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more
transistors break down at voltages higher than the normal operating voltages but lower than the breakdown
voltage of the input gate. This type of protection scheme is limited by leakage currents which flow through the
shunting transistors during normal operation after an ESD voltage has occurred. Although these currents are
small, on the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as
tens of picoamps.
To overcome this limitation, Texas Instruments design engineers developed the patented ESD-protection circuit
shown in Figure 4. This circuit can withstand several successive 1-kV ESD pulses, while reducing or eliminating
leakage currents that may be drawn through the input pins. A more detailed discussion of the operation of Texas
Instruments’s ESD- protection circuit is presented on the next page.
All input and output pins on LinCMOS and Advanced LinCMOS products have associated ESD-protection
circuitry that undergoes qualification testing to withstand 1000 V discharged from a 100-pF capacitor through
a 1500-Ω resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor
(charged device model). These tests simulate both operator and machine handling of devices during normal
test and assembly operations.
V
DD
R1
Input
To Protected Circuit
R2
Q1
Q2
D1
D2
D3
V
SS
Figure 4. LinCMOS ESD-Protection Schematic
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
8
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SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
PRINCIPLES OF OPERATION
input protection circuit operation
Texas Instruments’ patented protection circuitry allows for both positive-and negative-going ESD transients.
These transients are characterized by extremely fast rise times and usually low energies, and can occur both
when the device has all pins open and when it is installed in a circuit.
positive ESD transients
Initial positive charged energy is shunted through Q1 to V . Q1 turns on when the voltage at the input rises
SS
EB
above the voltage on the V
pin by a value equal to the V of Q1. The base current increases through R2
DD
with input current as Q1 saturates. The base current through R2 forces the voltage at the drain and gate of Q2
to exceed its threshold level (V ~ 22 V to 26 V) and turn Q2 on. The shunted input current through Q1 to V
T
SS
is now shunted through the n-channel enhancement-type MOSFET Q2 to V . If the voltage on the input pin
SS
continues to rise, the breakdown voltage of the zener diode D3 is exceeded, and all remaining energy is
dissipated in R1 and D3. The breakdown voltage of D3 is designed to be 24 V to 27 V, which is well below the
gate oxide voltage of the circuit to be protected.
negative ESD transients
The negative charged ESD transients are shunted directly through D1. Additional energy is dissipated in R1
and D2 as D2 becomes forward biased. The voltage seen by the protected circuit is −0.3 V to −1 V (the forward
voltage of D1 and D2).
circuit-design considerations
LinCMOS products are being used in actual circuit environments that have input voltages that exceed the
recommended common-mode input voltage range and activate the input protection circuit. Even under normal
operation, these conditions occur during circuit power up or power down, and in many cases, when the device
is being used for a signal conditioning function. The input voltages can exceed V
and not damage the device
ICR
only if the inputs are current limited. The recommended current limit shown on most product data sheets is
5 mA. Figure 5 and Figure 6 show typical characteristics for input voltage versus input current.
Normal operation and correct output state can be expected even when the input voltage exceeds the positive
supply voltage. Again, the input current should be externally limited even though internal positive current limiting
is achieved in the input protection circuit by the action of Q1. When Q1 is on, it saturates and limits the current
to approximately 5-mA collector current by design. When saturated, Q1 base current increases with input
current. This base current is forced into the V
producing the current limiting effects shown in Figure 5. This internal limiting lasts only as long as the input
pin and into the device I
or the V
supply through R2
DD
DD
DD
voltage is below the V of Q2.
T
When the input voltage exceeds the negative supply voltage, normal operation is affected and output voltage
states may not be correct. Also, the isolation between channels of multiple devices (duals and quads) can be
severely affected. External current limiting must be used since this current is directly shunted by D1 and D2 and
no internal limiting is achieved. If normal output voltage states are required, an external input voltage clamp is
required (see Figure 7).
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ꢀ ꢁ ꢂ ꢃꢄ ꢅ
ꢆ
ꢁ
ꢇ
ꢂ
ꢈ
ꢉ
ꢊ
ꢋ ꢌꢍ ꢁ ꢋꢎ ꢏ ꢏꢐ ꢑꢐ ꢒꢀ ꢎ ꢍꢁ ꢂꢉ ꢈꢓꢍꢑꢍꢀꢉ ꢑꢊ
SLCS114E − NOVEMBER 1983 − REVISED JULY 2008
PRINCIPLES OF OPERATION
circuit-design considerations (continued)
INPUT CURRENT
vs
INPUT CURRENT
vs
POSITIVE INPUT VOLTAGE
NEGATIVE INPUT VOLTAGE
8
−10
−9
−8
−7
−6
−5
−4
−3
−2
−1
0
T
A
= 25°C
T
= 25°C
A
7
6
5
4
3
2
1
0
V
V
DD
+ 4
V
DD
+ 8
V
DD
+ 12
−0.3
−0.5
−0.7
−0.9
DD
Input Voltage (V)
Input Voltage (V)
Figure 5
Figure 6
V
DD
Positive Voltage Input Current Limit:
+V − V − 0.3 V
I
DD
5 mA
R =
I
R
I
R
L
Negative Voltage Input Current Limit:
V
I
+
| −V | − 0.3 V
I
R =
I
TLC372
−
5 mA
V
ref
See Note A
NOTE A: If the correct output state is required when the negative input is less than GND, a schottky clamp is required.
Figure 7. Typical Input Current-Limiting Configuration for a LinCMOS Comparator
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
5962-87658012A
ACTIVE
LCCC
FK
20
1
TBD
TBD
POST-PLATE
N / A for Pkg Type
-55 to 125
5962-
87658012A
TLC372MFKB
5962-8765801PA
5962-9554901NXD
5962-9554901NXDR
TLC372CD
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
CDIP
SOIC
SOIC
SOIC
SOIC
SOIC
PDIP
SO
JG
D
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
1
SNPB
N / A for Pkg Type
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
-55 to 125
-55 to 125
-55 to 125
0 to 70
8765801PA
TLC372M
2500
2500
75
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
Q372M
Q372M
372C
D
Green (RoHS
& no Sb/Br)
D
Green (RoHS
& no Sb/Br)
TLC372CDR
D
2500
2500
50
Green (RoHS
& no Sb/Br)
0 to 70
372C
TLC372CDRG4
TLC372CP
D
Green (RoHS
& no Sb/Br)
0 to 70
372C
P
Green (RoHS
& no Sb/Br)
0 to 70
TLC372CP
P372
TLC372CPS
PS
PS
PS
PS
PW
PW
PW
D
80
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
0 to 70
TLC372CPSG4
TLC372CPSR
TLC372CPSRG4
TLC372CPW
SO
80
Green (RoHS
& no Sb/Br)
0 to 70
P372
SO
2000
2000
150
2000
2000
75
Green (RoHS
& no Sb/Br)
0 to 70
P372
SO
Green (RoHS
& no Sb/Br)
0 to 70
P372
TSSOP
TSSOP
TSSOP
SOIC
Green (RoHS
& no Sb/Br)
0 to 70
P372
TLC372CPWR
TLC372CPWRG4
TLC372ID
Green (RoHS
& no Sb/Br)
0 to 70
P372
Green (RoHS
& no Sb/Br)
0 to 70
P372
Green (RoHS
& no Sb/Br)
-40 to 85
372I
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
2500
2500
50
(1)
(2)
(3)
(4/5)
(6)
TLC372IDR
TLC372IDRG4
TLC372IP
ACTIVE
SOIC
SOIC
PDIP
SOIC
SOIC
SOIC
SOIC
LCCC
D
D
8
8
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
-40 to 85
-40 to 85
-40 to 85
-55 to 125
372I
372I
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
P
8
Green (RoHS
& no Sb/Br)
TLC372IP
372M
TLC372MD
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
N / A for Pkg Type
TLC372MDG4
TLC372MDR
TLC372MDRG4
TLC372MFKB
D
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
372M
D
8
2500
2500
1
Green (RoHS
& no Sb/Br)
NIPDAU
-55 to 125
-55 to 125
372M
D
8
Green (RoHS
& no Sb/Br)
NIPDAU
372M
FK
20
TBD
POST-PLATE
5962-
87658012A
TLC372MFKB
TLC372MJG
ACTIVE
ACTIVE
CDIP
CDIP
JG
JG
8
8
1
1
TBD
TBD
SNPB
SNPB
N / A for Pkg Type
N / A for Pkg Type
-55 to 125
-55 to 125
TLC372MJG
TLC372MJGB
8765801PA
TLC372M
TLC372MP
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
NIPDAU
N / A for Pkg Type
-55 to 125
TLC372MP
TLC372MUB
TLC372QD
ACTIVE
ACTIVE
CFP
U
D
10
8
1
TBD
Call TI
N / A for Pkg Type
-55 to 125
-40 to 125
TLC372MUB
372Q
SOIC
75
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
TLC372QDG4
TLC372QDR
ACTIVE
ACTIVE
ACTIVE
SOIC
SOIC
SOIC
D
D
D
8
8
8
75
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
372Q
372Q
372Q
2500
2500
Green (RoHS
& no Sb/Br)
TLC372QDRG4
Green (RoHS
& no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLC372, TLC372M :
Catalog: TLC372
•
Enhanced Product: TLC372-EP, TLC372-EP
•
Military: TLC372M
•
NOTE: Qualified Version Definitions:
Addendum-Page 3
PACKAGE OPTION ADDENDUM
www.ti.com
26-Aug-2020
Catalog - TI's standard catalog product
•
•
•
Enhanced Product - Supports Defense, Aerospace and Medical Applications
Military - QML certified for Military and Defense Applications
Addendum-Page 4
PACKAGE MATERIALS INFORMATION
www.ti.com
25-Sep-2019
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
5962-9554901NXDR
TLC372CDR
SOIC
SOIC
SO
D
D
8
8
8
8
8
8
8
8
2500
2500
2000
2000
2500
2500
2500
2500
330.0
330.0
330.0
330.0
330.0
330.0
330.0
330.0
12.4
12.4
16.4
12.4
12.4
12.4
12.4
12.4
6.4
6.4
8.35
7.0
6.4
6.4
6.4
6.4
5.2
5.2
6.6
3.6
5.2
5.2
5.2
5.2
2.1
2.1
2.5
1.6
2.1
2.1
2.1
2.1
8.0
8.0
12.0
8.0
8.0
8.0
8.0
8.0
12.0
12.0
16.0
12.0
12.0
12.0
12.0
12.0
Q1
Q1
Q1
Q1
Q1
Q1
Q1
Q1
TLC372CPSR
TLC372CPWR
TLC372IDR
PS
PW
D
TSSOP
SOIC
SOIC
SOIC
SOIC
TLC372MDR
D
TLC372MDRG4
TLC372QDR
D
D
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
25-Sep-2019
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
5962-9554901NXDR
TLC372CDR
SOIC
SOIC
SO
D
D
8
8
8
8
8
8
8
8
2500
2500
2000
2000
2500
2500
2500
2500
350.0
340.5
367.0
367.0
340.5
350.0
350.0
350.0
350.0
338.1
367.0
367.0
338.1
350.0
350.0
350.0
43.0
20.6
38.0
35.0
20.6
43.0
43.0
43.0
TLC372CPSR
TLC372CPWR
TLC372IDR
PS
PW
D
TSSOP
SOIC
SOIC
SOIC
SOIC
TLC372MDR
D
TLC372MDRG4
TLC372QDR
D
D
Pack Materials-Page 2
PACKAGE OUTLINE
U0010A
CFP - 2.03 mm max height
S
C
A
L
E
1
.
4
0
0
CERAMIC FLATPACK
.27 MAX
GLASS
.005 MIN
TYP
.010 .002
1
PIN 1 ID
.045 MAX
TYP
10
8X .050 .005
.27 MAX
GLASS
5
6
10X .017 .002
+.019
.241
5X .32 .01
5X .32 .01
-.003
.005 .001
+.013
.067
-.012
.045
.026
4225582/A 01/2020
NOTES:
1. All linear dimensions are in inches. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
www.ti.com
PACKAGE OUTLINE
D0008A
SOIC - 1.75 mm max height
SCALE 2.800
SMALL OUTLINE INTEGRATED CIRCUIT
C
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A
PIN 1 ID AREA
6X .050
[1.27]
8
1
2X
.189-.197
[4.81-5.00]
NOTE 3
.150
[3.81]
4X (0 -15 )
4
5
8X .012-.020
[0.31-0.51]
B
.150-.157
[3.81-3.98]
NOTE 4
.069 MAX
[1.75]
.010 [0.25]
C A B
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
[0.11-0.25]
0 - 8
.016-.050
[0.41-1.27]
DETAIL A
TYPICAL
(.041)
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
SEE
DETAILS
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
EXPOSED
METAL
EXPOSED
METAL
.0028 MAX
[0.07]
.0028 MIN
[0.07]
ALL AROUND
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM
1
8
8X (.024)
[0.6]
SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
MECHANICAL DATA
MCER001A – JANUARY 1995 – REVISED JANUARY 1997
JG (R-GDIP-T8)
CERAMIC DUAL-IN-LINE
0.400 (10,16)
0.355 (9,00)
8
5
0.280 (7,11)
0.245 (6,22)
1
4
0.065 (1,65)
0.045 (1,14)
0.310 (7,87)
0.290 (7,37)
0.063 (1,60)
0.015 (0,38)
0.020 (0,51) MIN
0.200 (5,08) MAX
0.130 (3,30) MIN
Seating Plane
0.023 (0,58)
0.015 (0,38)
0°–15°
0.100 (2,54)
0.014 (0,36)
0.008 (0,20)
4040107/C 08/96
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. This package can be hermetically sealed with a ceramic lid using glass frit.
D. Index point is provided on cap for terminal identification.
E. Falls within MIL STD 1835 GDIP1-T8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OUTLINE
PW0008A
TSSOP - 1.2 mm max height
S
C
A
L
E
2
.
8
0
0
SMALL OUTLINE PACKAGE
C
6.6
6.2
SEATING PLANE
TYP
PIN 1 ID
AREA
A
0.1 C
6X 0.65
8
5
1
3.1
2.9
NOTE 3
2X
1.95
4
0.30
0.19
8X
4.5
4.3
1.2 MAX
B
0.1
C A
B
NOTE 4
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE
0.15
0.05
0.75
0.50
0 - 8
DETAIL A
TYPICAL
4221848/A 02/2015
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
PW0008A
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
8X (1.5)
SYMM
8X (0.45)
(R0.05)
1
4
TYP
8
SYMM
6X (0.65)
5
(5.8)
LAND PATTERN EXAMPLE
SCALE:10X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
NOT TO SCALE
4221848/A 02/2015
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
PW0008A
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
8X (1.5)
SYMM
(R0.05) TYP
8X (0.45)
1
4
8
SYMM
6X (0.65)
5
(5.8)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:10X
4221848/A 02/2015
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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