TLV76733DRVT [TI]
具有可调节输出和固定输出的 1A、16V 正电压低压降 (LDO) 线性稳压器 | DRV | 6 | -40 to 125;型号: | TLV76733DRVT |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有可调节输出和固定输出的 1A、16V 正电压低压降 (LDO) 线性稳压器 | DRV | 6 | -40 to 125 稳压器 |
文件: | 总38页 (文件大小:4422K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TLV767
SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
TLV767 1-A, 16-V Precision Linear Voltage Regulator
1 Features
3 Description
The TLV767 is a wide input linear voltage regulator
supporting an input voltage range from 2.5 V to 16 V
and up to 1 A of load current. The output range is
from 0.8 V to 6.6 V or up to 13.6 V in the adjustable
version.
1
•
•
VIN: 2.5 V to 16 V
VOUT
:
–
–
0.8 V to 13.6 V (adjustable)
0.8 V to 6.6 V (fixed, 50-mV steps)
•
•
•
•
•
•
•
•
1% output accuracy over load and temperature
Low IQ: 50 µA (typical, ~1.5 µA in shutdown)
Internal soft-start time: 500 µs (typical)
Fold-back current limiting and thermal protection
Stable with 1-µF ceramic capacitors
High PSRR: 70 dB at 1 kHz, 46 dB at 1 MHz
Temperature range: –40°C to +125°C
Package:
Additionally, the TLV767 has a 1% output accuracy
that can meet the needs of low voltage
microcontrollers (MCUs) and processors.
The TLV767 is designed to have a much lower IQ
than traditional wide-VIN regulators, thus making the
device well positioned to meet the needs of
increasingly stringent standby power requirements.
When disabled, the TLV767 draws only 1.5 µA of IQ.
The internal soft-start time and foldback current limit
reduce inrush current during startup, thus minimizing
input capacitance.
–
–
6-pin 2-mm × 2-mm WSON
8-pin 3-mm x 3-mm HVSSOP
Wide bandwidth PSRR performance is greater than
70 dB at 1 kHz and 46 dB at 1 MHz, which helps
attenuate the switching frequency of an upstream
DC/DC converter and minimizes post regulator
filtering. To allow for more flexibility, the TLV767 has
both fixed and adjustable versions.
2 Applications
•
•
•
•
•
•
Appliances
TVs, monitors, and set top boxes
Motion detectors (PIR, uWave, and so forth)
Motor drives and control boards
Printers and PC peripherals
Wi-Fi access points and routers
The TLV767 is available in a 6-pin, 2-mm × 2-mm
WSON (DRV) and an 8-pin 3-mm x 3-mm HVSSOP
(DGN) package.
Device Information(1)
PART
NUMBER
PACKAGE
BODY SIZE (NOM)
WSON (6)
HVSSOP (8)
2.00 mm × 2.00 mm
3.00 mm x 3.00 mm
TLV767
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Circuit
Reduced Inrush Current With 22 µF at COUT
9
0.75
OUT
IN
8
0.5
7
0.25
0
R1
CFF
(opt.)
TLV767
COUT
CIN
6
EN
FB
5
-0.25
-0.5
-0.75
-1
VOUT
IIN
VIN
GND
4
R2
3
VEN
2
1
-1.25
-1.5
-1.75
0
-1
0
0.5
1
1.5
2
2.5
Time (ms)
3
3.5
4
4.5
5
D003
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLV767
SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
www.ti.com
Table of Contents
1
2
3
4
5
6
Features.................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 5
6.6 Typical Characteristics.............................................. 7
Detailed Description ............................................ 13
7.1 Overview ................................................................. 13
7.2 Functional Block Diagrams ..................................... 13
7.3 Feature Description................................................. 14
7.4 Device Functional Modes........................................ 16
8
Application and Implementation ........................ 17
8.1 Application Information............................................ 17
8.2 Typical Application .................................................. 20
Power Supply Recommendations...................... 21
9
10 Layout................................................................... 22
10.1 Layout Guidelines ................................................. 22
10.2 Layout Examples................................................... 22
11 Device and Documentation Support ................. 23
11.1 Device Support...................................................... 23
11.2 Documentation Support ....................................... 23
11.3 Receiving Notification of Documentation Updates 23
11.4 Support Resources ............................................... 23
11.5 Trademarks........................................................... 23
11.6 Electrostatic Discharge Caution............................ 23
11.7 Glossary................................................................ 23
7
12 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (April 2019) to Revision C
Page
•
•
•
•
•
Added DGN (HVSSOP) package to document ...................................................................................................................... 1
Changed Applications section ................................................................................................................................................ 1
Added DGN pinouts and pin information to Pin Configuration and Functions section........................................................... 3
Added HVSSOP thermal information .................................................................................................................................... 5
Added Layout Example for the Fixed HVSSOP Version and Layout Example for the Adjustable HVSSOP Version
figures to the Layout Examples section................................................................................................................................ 22
Changes from Revision A (December 2018) to Revision B
Page
•
•
•
•
•
•
•
Added Feedback divider current for adjustable device only.................................................................................................. 4
Added Quiescent current for fixed output devices.................................................................................................................. 5
Changed order of curves in Typical Characteristics to keep key figures side by side........................................................... 7
Added condition to VOUT Accuracy vs VIN figure..................................................................................................................... 7
Added adjustable-voltage version devices to condition statement of IQ vs VIN figure ............................................................ 7
Added IQ vs Temperature figure ............................................................................................................................................ 7
Added in Dropout to caption of VIN Transient in Dropout From 4 V to 13 V figure ................................................................ 9
Changes from Original (December 2018) to Revision A
Page
•
Changed status from Advance Information to Production Data ............................................................................................ 1
2
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TLV767
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SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
5 Pin Configuration and Functions
DRV Package (Adjustable)
6-Pin WSON
DGN Package (Adjustable)
8-Pin HVSSOP
Top View
Top View
OUT
FB
IN
NC
1
2
3
4
8
7
6
5
OUT
FB
1
2
3
6
5
4
IN
Thermal
pad
GND
EN
Thermal pad
NC
GND
EN
GND
GND
Not to scale
Not to scale
DRV Package (Fixed)
6-Pin WSON
DGN Package (Fixed)
8-Pin HVSSOP
Top View
Top View
OUT
SNS
GND
1
2
3
6
5
4
IN
OUT
SNS
NC
IN
NC
1
2
3
4
8
7
6
5
Thermal
pad
GND
EN
Thermal pad
GND
EN
GND
Not to scale
Not to scale
Pin Functions
PIN
I/O
DESCRIPTION
DRV
(Adj)
DRV
(Fixed)
DGN
(Adj)
DGN
(Fixed)
NAME
Enable pin. Driving the enable pin high enables the device. Driving this pin low
disables the device. High and low thresholds are listed in the Electrical
Characteristics table. This pin has an internal pullup and can be left floating to
enable the device or the pin can be connected to the input pin.
EN
4
4
5
5
I
Feedback pin. Input to the control-loop error amplifier. This pin is used to set the
output voltage of the device with the use of external resistors. Do not float this
pin. For adjustable-voltage version devices only.
FB
2
3, 5
6
—
3, 5
6
2
4, 6
8
—
4, 6
8
I
GND
IN
—
O
Ground pin. All ground pins must be grounded.
Input pin. Use the recommended capacitor value as listed in the Recommended
Operating Conditions table. Place the input capacitor as close to the IN and GND
pins of the device as possible.
Output pin. Use the recommended capacitor value as listed in the
Recommended Operating Conditions table. Place the output capacitor as close
to the OUT and GND pins of the device as possible.
OUT
SNS
1
1
2
1
1
2
O
I
Output sense pin. Connect the SNS pin to the OUT pin, or to remotely sense the
output voltage at the load, connect the SNS pin to the load. Do not float this pin.
For fixed-voltage version devices only.
—
—
Exposed pad of the package. Connect this pad to ground or leave floating.
Connect the thermal pad to a large-area ground plane for best thermal
performance.
Thermal
pad
Pad
Pad
Pad
Pad
—
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SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
18
UNIT
VIN
–0.3
(3)
VOUT
–0.3
VIN + 0.3
VIN + 0.3
3
(3)
Voltage(2)
VSNS
–0.3
V
VFB
–0.3
VEN
–0.3
18
Current
Maximum output current
Operating junction (TJ)
Internally Limited
A
–50
–65
150
150
Temperature
°C
Storage (TSTG
)
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages with respect to GND.
(3) VIN + 0.3 V or 18 V (whichever is smaller)
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per
±3000
ANSI/ESDA/JEDEC JS-001, all pins(1)
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
2.5
0
NOM
MAX
16
UNIT
V
VIN
Input voltage
VEN
Enable voltage
16
V
VOUT
IOUT
Output voltage
0.8
0
13.6
0.8
1
V
Output current (2.5 V ≤ VIN < 3 V)
Output current (VIN ≥ 3 V)
Output capacitor(1)
A
IOUT
0
A
COUT
COUT ESR
CIN
1
2.2
220
500
µF
mΩ
µF
pF
µA
°C
Output capacitor ESR
2
Input capacitor
1
CFF
Feed-forward capacitor (optional(2), for adjustable device only)
Feedback divider current(2) (adjustable device only)
Junction temperature
10
IFB_DIVIDER
TJ
5
–40
125
(1) Effective output capacitance of 0.5 µF minimum required for stability.
(2) CFF required for stability if the feedback divider current < 5 µA. Feedback divider current = VOUT / (R1 + R2). See Feed-Forward
Capacitor (CFF) section for details.
4
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SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
6.4 Thermal Information
TLV767
THERMAL METRIC(1)
DGN (HVSSOP)
DRV (WSON)
6 PINS
77.7
UNIT
8 PINS
60.1
81.7
32.8
6
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
92.3
40.8
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
4.3
ΨJB
32.7
15.5
40.8
RθJC(bot)
18.9
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics
Specified at TJ = –40°C to 125°C, VIN = VOUT(nom) + 1.5 V or VIN = 2.5 V (whichever is greater), FB/SNS tied to OUT, IOUT = 10
mA, VEN = 2 V, CIN = 1.0 µF, COUT = 1.0 µF (unless otherwise noted). Typical values are at TJ= 25ºC.
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
VOUT
VOUT
VFB
Nominal output accuracy
TJ = 25°C
–0.5
–1
0.5
1
%
%
V
VIN ≥ 3.0 V, 1 mA ≤ IOUT ≤ 1 A
Output accuracy over temperature
Feedback voltage
2.5 V ≤ VIN < 3.0 V, 1 mA ≤ IOUT ≤ 800 mA
–1
1
0.8
10
TJ = 25ºC
–0.5
–1
0.5
1
VREF
IFB
Internal reference (adjustable device)
Feedback pin current
%
nA
VFB = 1 V
50
ΔVOUT(ΔVIN) Line regulation(1)
VOUT(NOM) +1.5 V ≤ VIN ≤ 16 V, IOUT = 10 mA
1 mA ≤ IOUT ≤ 1 A, VIN ≥ 3.0 V
1 mA ≤ IOUT ≤ 800 mA, 2.5 V ≤ VIN < 3.0 V
0.02 %/V
0.1
0.1
0.9
0.9
0.8
0.5
ΔVOUT(ΔIOUT) Load regulation
%/A
0.5
V
IN ≥ 3.0V, IOUT = 1 A, DGN package
IN ≥ 3.0V, IOUT = 1 A, DRV package
1.5
VDO
Dropout voltage(2)
V
1.4
1.3
1.6
1.6
V
2.5 V ≤ VIN < 3.0 V, IOUT = 800 mA
VOUT = 0.9 x VOUT(NOM), IN ≥ 3.0V
V
1.1
ICL
ISC
IQ
Output current limit
Short-circuit current limit
Quiescent current
A
VOUT = 0.9 x VOUT(NOM), 2.5 V ≤ VIN < 3.0 V
VOUT = 0 V, DGN package
VOUT = 0 V, DRV package
IOUT = 0 mA
0.81
250
250
50
mA
mA
150
350
80
µA
Fixed output devices, IOUT = 0 mA
IOUT = 1 A, VIN ≥ 3.0 V
60
95
IGND
Ground current
1.5
1.5
mA
µA
V
ISHUTDOWN
VEN(HIGH)
VEN(LOW)
IEN
Shutdown current
VEN ≤ 0.4 V, VIN = 16 V
3
Enable pin logic high
Enable pin logic low
Enable pullup current
Output pulldown current
Power-supply rejection ratio
2.5 V ≤ VIN ≤ 16 V
1.2
2.5 V ≤ VIN ≤ 16 V
0.4
V
VEN = 0 V
400
1.2
70
nA
mA
dB
IPULLDOWN
PSRR
VIN = 16 V, VOUT = 2.5 V, VEN=0V
VIN = 3.3 V, VOUT = 1.8 V, IOUT = 300 mA, f = 120 Hz
BW = 10 Hz to 100 kHz, VIN = 3.3 V, VOUT = 0.8 V,
IOUT = 100 mA
Vn
Output noise voltage
60
µVRMS
VUVLO+
UVLO threshold rising
UVLO hysteresis
VIN rising
2.2
2.4
V
mV
V
VUVLO(HYS)
VUVLO-
130
UVLO threshold falling
VIN falling
1.9
(1) Line regulation is measured with VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater)
(2) VDO is measured with VIN = 95% x VOUT(nom) for fixed output devices. VDO is not measured for fixed output devices when VOUT < 2.5 V.
For adjustable output device, VDO is measured with VFB = 95% x VFB(nom)
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Electrical Characteristics (continued)
Specified at TJ = –40°C to 125°C, VIN = VOUT(nom) + 1.5 V or VIN = 2.5 V (whichever is greater), FB/SNS tied to OUT, IOUT = 10
mA, VEN = 2 V, CIN = 1.0 µF, COUT = 1.0 µF (unless otherwise noted). Typical values are at TJ= 25ºC.
PARAMETER
TEST CONDITIONS
Temperature increasing
MIN TYP MAX UNIT
TSD(shutdown) Thermal shutdown temperature
180
160
ºC
ºC
TSD(reset)
Thermal shutdown reset temperature
Temperature falling
6
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SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
6.6 Typical Characteristics
at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater), IOUT = 10 mA, VEN = 2.0 V, CIN
=
1.0 µF, and COUT = 1.0 µF (unless otherwise noted)
0.2
0.1
0
0.2
0.1
0
-0.1
-0.2
-0.3
-0.4
-0.1
-0.2
TJ
TJ
-0.3
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0.6
-0.4
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Output Current (A)
1
0
0.1
0.2
0.3
0.4
Output Current (A)
0.5
0.7
0.8
VIN = 3.0 V
VIN = 2.5 V
Figure 1. VOUT Accuracy vs IOUT
Figure 2. VOUT Accuracy vs IOUT
5
4
3
2
1
0
0.2
0.1
0
TJ
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
-0.1
-0.2
-0.3
-0.4
TJ
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0
2
4
6
8
10
Input Voltage (V)
12
14
16
2.5
4
5.5
7
8.5 10 11.5 13 14.5 16
Input Voltage (V)
IOUT = 10 mA
Figure 4. ISHUTDOWN vs VIN
Figure 3. VOUT Accuracy vs VIN
90
80
70
60
50
40
30
80
70
60
50
40
30
20
TJ
VOUT
2.8 V
3.3 V
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0.8 V
1.8 V
5.0 V
2.5
4.5
6.5
8.5 10.5
Input Voltage (V)
12.5
14.5
16
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
IOUT = 0 mA, adjustable-voltage version devices
IOUT = 0 mA, fixed-voltage version devices
Figure 5. IQ vs VIN
Figure 6. IQ vs Temperature
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Typical Characteristics (continued)
at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater), IOUT = 10 mA, VEN = 2.0 V, CIN
1.0 µF, and COUT = 1.0 µF (unless otherwise noted)
=
2.5
2.5
TJ
-50°C
-40°C
-0°C
25°C
85°C
125°C
150°C
2
2
1.5
1
1.5
1
0.5
0
0.5
0
TJ
-50°C
-40°C
-0°C
25°C
85°C
125°C
150°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Output Current (A)
1
0
0.1
0.2
0.3
Output Current (A)
0.4
0.5
0.6
0.7
0.8
VIN = 3.0 V
VIN = 2.5 V
Figure 7. IGND vs IOUT
Figure 8. IGND vs IOUT
300
700
150
TJ
IOUT
VOUT
200
100
600
500
400
300
200
100
0
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
130
110
90
0
-100
-200
-300
-400
-500
-600
-700
-800
-900
70
50
-100
-200
-300
-400
-500
30
10
-10
0
0.5
1
1.5
Input Voltage (V)
2
2.5
3
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
D021
IOUT = 0 mA
Figure 9. IQ Increase Below Minimum VIN
VIN = 5 V, VOUT = 3.3 V, CFF = 10 pF, ramp rate = 0.4 A/µs
Figure 10. IOUT Transient From 0 mA to 100 mA
1000
700
1500
1000
500
700
600
500
400
300
200
100
0
IOUT
VOUT
750
500
600
500
400
300
200
100
0
250
0
0
-500
-250
-500
-750
-1000
-1250
-1500
-1750
-2000
-1000
-1500
-2000
-2500
-3000
-3500
-4000
-4500
-100
-200
-300
-400
-500
-100
-200
-300
-400
-500
IOUT
VOUT
0
20
40
60
80 100 120 140 160 180 200
Time (µs)
0
50 100 150 200 250 300 350 400 450 500
Time (µs)
D035
D034
VIN = 5 V, VOUT = 3.3 V, ramp rate = 0.8 A/µs
VIN = 5 V, VOUT = 3.3 V, CFF = 10 pF, ramp rate = 0.5 A/µs
Figure 12. IOUT Transient From 250 mA to 850 mA
Figure 11. IOUT Transient From 1 mA to 1 A
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Typical Characteristics (continued)
at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater), IOUT = 10 mA, VEN = 2.0 V, CIN
=
1.0 µF, and COUT = 1.0 µF (unless otherwise noted)
800
40
35
30
25
20
15
10
5
30
20
40
35
30
25
20
15
10
5
VOUT
VIN
VOUT
VIN
600
400
200
0
10
0
-10
-20
-30
-40
-50
-200
-400
-600
-800
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
0
0
D037
D038
VOUT = 3.3 V, IOUT = 1 A, VIN ramp rate = 0.6 V/µs
VOUT = 3.3 V, IOUT = 33 µA, VIN ramp rate = 1.6 V/µs
Figure 13. VIN Transient in Dropout From 4 V to 13 V
Figure 14. VIN Transient From 5 V to 16 V
1.4
1.3
1.2
1.1
1
1.4
1.3
1.2
1.1
1
TJ
TJ
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0.9
0.8
0.7
0.6
0.5
0.9
0.8
0.7
0.6
0.5
3
4.5
6
7.5
9
Input Voltage (V)
10.5
12
13.5
15 16
2.5
4
5.5
7
8.5
Input Voltage (V)
10
11.5
13
14.5
16
IOUT = 1.0 A
IOUT = 0.8 A
Figure 15. VDO vs VIN
Figure 16. VDO vs VIN
1.4
1.2
1
1.4
1.2
1
TJ
TJ
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Output Current (A)
1
0
0.1
0.2
0.3
0.4
0.5
Output Current (A)
0.6
0.7
0.8
VIN = 3.0 V
VIN = 2.5 V
Figure 17. VDO vs IOUT
Figure 18. VDO vs IOUT
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Typical Characteristics (continued)
at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater), IOUT = 10 mA, VEN = 2.0 V, CIN
1.0 µF, and COUT = 1.0 µF (unless otherwise noted)
=
150
125
100
75
150
125
100
75
TJ
TJ
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
50
50
25
25
0
0
0
0.2
0.4
0.6
Output Current (A)
0.8
1
1.2
1.4
1.6
0
0.2
0.4
0.6
Output Current (A)
0.8
1
1.2
1.4
1.6
VIN = 3.0 V
VIN = 2.5 V
Figure 19. Foldback Current Limit vs Temperature
Figure 20. Foldback Current Limit vs Temperature
5.5
5.5
VOUT
VIN
VEN
VOUT
VIN
VEN
5
4.5
4
5
4.5
4
3.5
3
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
-0.5
-0.5
0
0.5
1
1.5
2
2.5
Time (ms)
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
Time (ms)
3
3.5
4
4.5
5
D004
D032
Enable pulled up internally, VOUT = 0.8 V
VOUT = 3.3 V
Figure 21. Startup With Separate VEN and VIN
Figure 22. Startup With VEN Floating
0.9
0.85
0.8
0.9
0.85
0.8
VEN(HIGH)
VEN(LOW)
0.75
0.7
0.75
0.7
0.65
0.6
0.65
0.6
VEN(HIGH)
VEN(LOW)
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
VIN = 2.5 V
VIN = 16 V
Figure 23. VEN Thresholds vs Temperature
Figure 24. VEN Thresholds vs Temperature
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Typical Characteristics (continued)
at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater), IOUT = 10 mA, VEN = 2.0 V, CIN
=
1.0 µF, and COUT = 1.0 µF (unless otherwise noted)
2.3
100
90
80
70
60
50
40
30
20
10
0
VUVLO+ (VIN rising)
VUVLO- (VIN falling)
2.25
2.2
2.15
2.1
IOUT
60 mA
300 mA
550 mA
1.0 A
2.05
2
-50
-25
0
25
50
75
100
125
150
10
100
1k
10k 100k
Frequency (Hz)
1M
10M
Temperature (èC)
VOUT = 1.8 V, VIN = 3.3 V, CFF = 1 nF
Figure 25. UVLO Thresholds vs Temperature
Figure 26. PSRR vs IOUT
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
VIN
2.8 V
3.0 V
3.3 V
3.5 V
3.8 V
4.0 V
4.3 V
CFF
0 nF
1.0 nF
10
100
1k
10k 100k
Frequency (Hz)
1M
10M
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
D001
VOUT = 3.3 V, VIN = 4.8 V, IOUT = 0.33 A
VOUT = 1.8 V, IOUT = 0.55 A, CFF = 1 nF
Figure 28. PSRR vs CFF
Figure 27. PSRR vs VIN
20
700
600
500
400
300
200
100
10
5
2
1
0.5
0.2
0.1
0.05
VOUT
0.8 V, RMS Noise = 66.4 mVRMS
3.3 V, RMS Noise = 216.5 mVRMS
TJ
0.02
0.01
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0.005
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
2.5
4.5
6.5
8.5 10.5
Input Voltage (V)
12.5
14.5
16
CFF = 0 nF, IOUT = 0.1 A, RMS noise BW = 10 Hz to 100 kHz
VEN = 0 V
Figure 30. IEN vs VIN
Figure 29. Output Noise (Vn) vs VOUT
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Typical Characteristics (continued)
at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.5 V or 2.5 V (whichever is greater), IOUT = 10 mA, VEN = 2.0 V, CIN
1.0 µF, and COUT = 1.0 µF (unless otherwise noted)
=
1.5
1.4
1.3
1.2
1.1
1
100
90
80
70
60
50
40
30
20
10
0
VIN
2.5 V
7.5 V
12.5 V
16 V
TJ
-50°C
-40°C
0°C
25°C
85°C
125°C
150°C
0.9
-10
2.5
4.5
6.5
8.5 10.5
Input Voltage (V)
12.5
14.5
16
-50
-25
0
25
Temperature (°C)
50
75
100
125
150
VOUT = 2.5 V
VFB = 1.0 V
Figure 31. IPULLDOWN vs VIN
Figure 32. IFB vs Temperature
9
0.75
0.5
9
8
0.75
8
7
0.5
0.25
0
0.25
0
7
6
6
5
-0.25
-0.5
-0.75
-1
5
-0.25
-0.5
VOUT
IIN
VIN
VEN
VOUT
IIN
VIN
VEN
4
4
3
3
-0.75
-1
2
2
1
-1.25
-1.5
-1.75
1
-1.25
-1.5
0
0
-1
-1
-1.75
0
0.5
1
1.5
2
2.5
Time (ms)
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
Time (ms)
3
3.5
4
4.5
5
D003
D031
VOUT = 3.3 V, IOUT = 33 µA
Figure 33. Startup Inrush Current With COUT = 22 µF
VOUT = 3.3 V, IOUT = 33 µA
Figure 34. Startup Inrush Current With COUT = 47 µF
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7 Detailed Description
7.1 Overview
The TLV767 is a low quiescent current, high PSRR linear regulator capable of handling up to 1 A of load current.
Unlike typical high current linear regulators, the TLV767 consumes significantly less quiescent current. This
device is ideal for high current applications that require very sensitive power-supply rails.
This device features integrated foldback current limit, thermal shutdown, output enable, internal output pulldown
and undervoltage lockout (UVLO). This device delivers excellent line and load transient performance. This device
is low noise and exhibits a very good PSRR. The operating ambient temperature range of the device is –40°C to
125°C.
7.2 Functional Block Diagrams
Current Limit
IN
OUT
Internal
Controller
UVLO
FB
0.8-V
Reference
EN
Thermal
Shutdown
Output
Pulldown
GND
Figure 35. Adjustable Version Block Diagram
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Functional Block Diagrams (continued)
Current Limit
IN
OUT
SNS
R1
2 pF
Internal
Controller
UVLO
R2
0.8-V
Reference
EN
Thermal
Shutdown
Output
Pulldown
Internal Resistors
R1 531 kΩ or 1.062 MΩ
R2
66.9 kΩ œ 8.5 MΩ
GND
Figure 36. Fixed Version Block Diagram
7.3 Feature Description
7.3.1 Output Enable
The enable pin for the device is an active-high pin. The output voltage is enabled when the voltage of the enable
pin is greater than the high-level input voltage of the EN pin and disabled with the enable pin voltage is less than
the low-level input voltage of the EN pin. If independent control of the output voltage is not needed, connect the
enable pin to the input of the device.
This device has an internal pullup current on the EN pin. The EN pin can be left floating to enable the device.
The device has an internal pulldown circuit that activates when the device is disabled to actively discharge the
output voltage.
7.3.2 Dropout Voltage
Dropout voltage (VDO) is defined as the input voltage minus the output voltage (VIN – VOUT) at the rated output
current (IRATED), where the pass transistor is fully on. IRATED is the maximum IOUT listed in the Recommended
Operating Conditions table. The pass transistor is in the ohmic or triode region of operation, and acts as a switch.
The dropout voltage indirectly specifies a minimum input voltage greater than the nominal programmed output
voltage at which the output voltage is expected to stay in regulation. If the input voltage falls to less than the
nominal output regulation, then the output voltage falls as well.
For a CMOS regulator, the dropout voltage is determined by the drain-source on-state resistance (RDS(ON)) of the
pass transistor. Therefore, if the linear regulator operates at less than the rated current, the dropout voltage for
that current scales accordingly. Use Equation 1 to calculate the RDS(ON) of the device.
VDO
RDS(ON)
=
IRATED
(1)
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Feature Description (continued)
7.3.3 Foldback Current Limit
The device has an internal current limit circuit that protects the regulator during transient high-load current faults
or shorting events. The current limit is a hybrid brickwall-foldback scheme. The current limit transitions from a
brickwall scheme to a foldback scheme at the foldback voltage (VFOLDBACK). In a high-load current fault with the
output voltage above VFOLDBACK, the brickwall scheme limits the output current to the current limit (ICL). When the
voltage drops below VFOLDBACK, a foldback current limit activates that scales back the current as the output
voltage approaches GND. When the output is shorted, the device supplies a typical current called the short-
circuit current limit (ISC). ICL and ISC are listed in the Electrical Characteristics table.
For this device, VFOLDBACK = 50% × VOUT(nom)
.
The output voltage is not regulated when the device is in current limit. When a current limit event occurs, the
device begins to heat up because of the increase in power dissipation. When the device is in brickwall current
limit, the pass transistor dissipates power [(VIN – VOUT) × ICL]. When the device output is shorted and the output
is below VFOLDBACK, the pass transistor dissipates power [(VIN – VOUT) × ISC]. If thermal shutdown is triggered, the
device turns off. After the device cools down, the internal thermal shutdown circuit turns the device back on. If
the output current fault condition continues, the device cycles between current limit and thermal shutdown. For
more information on current limits, see the Know Your Limits application report.
Figure 37 shows a diagram of the foldback current limit.
VOUT
Brickwall
VOUT(NOM)
VFOLDBACK
Foldback
0 V
IOUT
IRATED
0 mA
ISC
ICL
Figure 37. Foldback Current Limit
7.3.4 Undervoltage Lockout (UVLO)
The device has an independent undervoltage lockout (UVLO) circuit that monitors the input voltage, allowing a
controlled and consistent turn on and off of the output voltage. To prevent the device from turning off if the input
drops during turn on, the UVLO has hysteresis as specified in the Electrical Characteristics table.
7.3.5 Output Pulldown
The device has an output pulldown circuit. VOUT pulldown sink to ground capability is listed in the Electrical
Characteristics table. The output pulldown activates under the following conditions:
•
•
Device disabled
1.0 V < VIN < VUVLO
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Feature Description (continued)
The output pulldown current for this device is 1.2 mA typical, as listed in the Electrical Characteristics table.
Do not rely on the output pulldown circuit for discharging a large amount of output capacitance after the input
supply has collapsed because reverse current can flow from the output to the input. This reverse current flow can
cause damage to the device. See the Reverse Current section for more details.
7.3.6 Thermal Shutdown
The device contains a thermal shutdown protection circuit to disable the device when the junction temperature
(TJ) of the pass transistor rises to TSD(shutdown) (typical). Thermal shutdown hysteresis assures that the device
resets (turns on) when the temperature falls to TSD(reset) (typical).
The thermal time-constant of the semiconductor die is fairly short, thus the device may cycle on and off when
thermal shutdown is reached until power dissipation is reduced. Power dissipation during startup can be high
from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output
capacitors. Under some conditions, the thermal shutdown protection disables the device before startup
completes.
For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating
Conditions table. Operation above this maximum temperature causes the device to exceed its operational
specifications. Although the internal protection circuitry of the device is designed to protect against thermal
overall conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device
into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.
7.4 Device Functional Modes
7.4.1 Device Functional Mode Comparison
The Device Functional Mode Comparison table shows the conditions that lead to the different modes of
operation. See the Electrical Characteristics table for parameter values.
Table 1. Device Functional Mode Comparison
PARAMETER
OPERATING MODE
VIN
VEN
IOUT
TJ
Normal operation
Dropout operation
VIN > VOUT(nom) + VDO and VIN > VIN(min)
VIN(min) < VIN < VOUT(nom) + VDO
VEN > VEN(HI)
VEN > VEN(HI)
IOUT < IOUT(max)
IOUT < IOUT(max)
TJ < TSD(shutdown)
TJ < TSD(shutdown)
Disabled
(any true condition
disables the device)
VIN < VUVLO
VEN < VEN(LOW)
Not applicable
TJ > TSD(shutdown)
7.4.2 Normal Operation
The device regulates to the nominal output voltage when the following conditions are met:
•
•
•
•
The input voltage is greater than the nominal output voltage plus the dropout voltage (VOUT(nom) + VDO
The output current is less than the current limit (IOUT < ICL
The device junction temperature is less than the thermal shutdown temperature (TJ < TSD
The enable voltage has previously exceeded the enable rising threshold voltage and has not yet decreased to
less than the enable falling threshold
)
)
)
7.4.3 Dropout Operation
If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other
conditions are met for normal operation, the device operates in dropout mode. In this mode, the output voltage
tracks the input voltage. During this mode, the transient performance of the device becomes significantly
degraded because the pass transistor is in the ohmic or triode region, and acts as a switch. Line or load
transients in dropout can result in large output-voltage deviations.
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When the device is in a steady dropout state (defined as when the device is in dropout, VIN < VOUT(NOM) + VDO
,
directly after being in a normal regulation state, but not during startup), the pass transistor is driven into the
ohmic or triode region. When the input voltage returns to a value greater than or equal to the nominal output
voltage plus the dropout voltage (VOUT(NOM) + VDO), the output voltage can overshoot for a short period of time
while the device pulls the pass transistor back into the linear region.
7.4.4 Disabled
The output of the device can be shutdown by forcing the voltage of the enable pin to less than the maximum EN
pin low-level input voltage (see the Electrical Characteristics table). When disabled, the pass transistor is turned
off, internal circuits are shutdown, and the output voltage is actively discharged to ground by an internal
discharge circuit from the output to ground.
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
8.1.1 Adjustable Device Feedback Resistors
The adjustable-version device requires external feedback divider resistors to set the output voltage. VOUT is set
using the feedback divider resistors, R1 and R2, according to the following equation:
VOUT = VFB × (1 + R1 / R2)
(2)
To ignore the FB pin current error term in the VOUT equation, set the feedback divider current to 100x the FB pin
current listed in the Electrical Characteristics table. This setting provides the maximum feedback divider series
resistance, as shown in the following equation:
R1 + R2 ≤ VOUT / (IFB × 100)
(3)
8.1.2 Recommended Capacitor Types
The device is designed to be stable using low equivalent series resistance (ESR) ceramic capacitors at the input
and output. Multilayer ceramic capacitors have become the industry standard for these types of applications and
are recommended, but must be used with good judgment. Ceramic capacitors that employ X7R-, X5R-, and
C0G-rated dielectric materials provide relatively good capacitive stability across temperature, whereas the use of
Y5V-rated capacitors is discouraged because of large variations in capacitance.
Regardless of the ceramic capacitor type selected, the effective capacitance varies with operating voltage and
temperature. As a rule of thumb, expect the effective capacitance to decrease by as much as 50%. The input
and output capacitors recommended in the Recommended Operating Conditions table account for an effective
capacitance of approximately 50% of the nominal value.
8.1.3 Input and Output Capacitor Requirements
Although an input capacitor is not required for stability, good analog design practice is to connect a capacitor
from IN to GND. This capacitor counteracts reactive input sources and improves transient response, input ripple,
and PSRR. An input capacitor is recommended if the source impedance is more than 0.5 Ω. A higher value
capacitor may be necessary if large, fast rise-time load or line transients are anticipated or if the device is located
several inches from the input power source.
Dynamic performance of the device is improved with the use of an output capacitor. Use an output capacitor
within the range specified in the Recommended Operating Conditions table for stability.
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Application Information (continued)
8.1.4 Reverse Current
Excessive reverse current can damage this device. Reverse current flows through the intrinsic body diode of the
pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the
long-term reliability of the device.
Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute
maximum rating of VOUT ≤ VIN + 0.3 V.
•
•
•
If the device has a large COUT and the input supply collapses with little or no load current
The output is biased when the input supply is not established
The output is biased above the input supply
If reverse current flow is expected in the application, external protection is recommended to protect the device.
Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation
is anticipated.
Figure 38 shows one approach for protecting the device.
Schottky Diode
Internal Body Diode
IN
OUT
Device
COUT
CIN
GND
Figure 38. Example Circuit for Reverse Current Protection Using a Schottky Diode
8.1.5 Feed-Forward Capacitor (CFF)
For the adjustable-voltage version device, a feed-forward capacitor (CFF) can be connected from the OUT pin to
the FB pin. CFF improves transient, noise, and PSRR performance, but is not required for regulator stability.
Recommended CFF values are listed in the Recommended Operating Conditions table. A higher capacitance CFF
can be used; however, the startup time increases. For a detailed description of CFF tradeoffs, see the Pros and
Cons of Using a Feedforward Capacitor with a Low-Dropout Regulator application report.
CFF and R1 form a zero in the loop gain at frequency fZ, while CFF, R1, and R2 form a pole in the loop gain at
frequency fP. CFF zero and pole frequencies can be calculated from the following equations:
fZ = 1 / (2 × π × CFF × R1)
(4)
(5)
fP = 1 / (2 × π × CFF × (R1 || R2))
CFF ≥ 10 pF is required for stability if the feedback divider current is less than 5 µA. Equation 6 calculates the
feedback divider current.
IFB_Divider = VOUT / (R1 + R2)
(6)
To avoid startup time increases from CFF, limit the product CFF × R1 < 50 µs.
For an output voltage of 0.8 V with the FB pin tied to the OUT pin, no CFF is used.
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Application Information (continued)
8.1.6 Power Dissipation (PD)
Circuit reliability requires consideration of the device power dissipation, location of the circuit on the printed circuit
board (PCB), and correct sizing of the thermal plane. The PCB area around the regulator must have few or no
other heat-generating devices that cause added thermal stress.
To first-order approximation, power dissipation in the regulator depends on the input-to-output voltage difference
and load conditions. Equation 7 calculates power dissipation (PD).
PD = (VIN – VOUT) × IOUT
(7)
NOTE
Power dissipation can be minimized, and therefore greater efficiency can be achieved, by
correct selection of the system voltage rails. For the lowest power dissipation use the
minimum input voltage required for correct output regulation.
For devices with a thermal pad, the primary heat conduction path for the device package is through the thermal
pad to the PCB. Solder the thermal pad to a copper pad area under the device. This pad area must contain an
array of plated vias that conduct heat to additional copper planes for increased heat dissipation.
The maximum power dissipation determines the maximum allowable ambient temperature (TA) for the device.
According to Equation 8, power dissipation and junction temperature are most often related by the junction-to-
ambient thermal resistance (RθJA) of the combined PCB and device package and the temperature of the ambient
air (TA).
TJ = TA + (RθJA × PD)
(8)
Thermal resistance (RθJA) is highly dependent on the heat-spreading capability built into the particular PCB
design, and therefore varies according to the total copper area, copper weight, and location of the planes. The
junction-to-ambient thermal resistance listed in the Thermal Information table is determined by the JEDEC
standard PCB and copper-spreading area, and is used as a relative measure of package thermal performance.
8.1.7 Estimating Junction Temperature
The JEDEC standard now recommends the use of psi (Ψ) thermal metrics to estimate the junction temperatures
of the linear regulator when in-circuit on a typical PCB board application. These metrics are not thermal
resistance parameters and instead offer a practical and relative way to estimate junction temperature. These psi
metrics are determined to be significantly independent of the copper area available for heat-spreading. The
Thermal Information table lists the primary thermal metrics, which are the junction-to-top characterization
parameter (ψJT) and junction-to-board characterization parameter (ψJB). These parameters provide two methods
for calculating the junction temperature (TJ). As described in , use the junction-to-top characterization parameter
(ψJT) with the temperature at the center-top of device package (TT) to calculate the junction temperature. As
described in , use the junction-to-board characterization parameter (ψJB) with the PCB surface temperature 1 mm
from the device package (TB) to calculate the junction temperature.
TJ = TT + ψJT × PD
where:
•
•
PD is the dissipated power
TT is the temperature at the center-top of the device package
(9)
TJ = TB + ψJB × PD
where
•
TB is the PCB surface temperature measured 1 mm from the device package and centered on the package
edge
(10)
For detailed information on the thermal metrics and how to use them, see the Semiconductor and IC Package
Thermal Metrics application report.
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8.2 Typical Application
This section discusses implementing this device for a typical application. Figure 39 shows the application circuit.
OUT
IN
R1
CFF
(opt.)
TLV767
COUT
CIN
EN
FB
GND
R2
Figure 39. Typical Application Circuit
8.2.1 Design Requirements
Table 2 summarizes the design requirements for this application.
Table 2. Design Parameters
PARAMETER
Input voltage
Output voltage
Output current
DESIGN REQUIREMENT
5 V
3.3 V
100 mA
8.2.2 Detailed Design Procedure
8.2.2.1 Transient Response
As with any regulator, increasing the size of the output capacitor reduces overshoot and undershoot magnitude.
If load transients are expected with ramp rates greater than 0.5 A/µs, use a 2.2-µF or larger output capacitor.
8.2.3 Choose Feedback Resistors
For this design example, VOUT is set to 3.3 V. The following equations set the feedback divider resistors for the
desired output voltage:
VOUT = VFB × (1 + R1 / R2)
(11)
(12)
R1 + R2 ≤ VOUT / (IFB × 100)
For improved output accuracy, use Equation 12 and IFB = 50 nA as listed in the Electrical Characteristics table to
calculate the upper limit for series feedback resistance (R1 + R2 ≤ 660 kΩ).
The control-loop error amplifier drives the FB pin to the same voltage as the internal reference (VFB = 0.8 V, as
listed in the Electrical Characteristics table). Use Equation 11 to determine the ratio of R1 / R2 = 3.125. Use this
ratio and solve Equation 12 for R2. Now calculate the upper limit for R2 ≤ 160 kΩ. Select a standard value
resistor for R2 = 160 kΩ.
Reference Equation 11 and solve for R1:
R1 = (VOUT / VFB – 1) × R2
(13)
From Equation 13, R1 = 500 kΩ can be determined. Select a standard value resistor for R1 = 499 kΩ. VOUT
=
3.3 V (as determined by Equation 11).
20
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SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
8.2.4 Application Curves
300
200
700
600
500
400
300
200
100
0
100
90
80
70
60
50
40
30
20
10
0
IOUT
VOUT
100
0
-100
-200
-300
-400
-500
-600
-700
-800
-900
-100
-200
-300
-400
-500
IOUT
100 mA
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
D021
VIN = 5 V, VOUT = 3.3 V, COUT = 1 µF, CFF = 0 pF
VIN = 5 V, VOUT = 3.3 V, COUT = 1 µF, CFF = 10 pF
Figure 41. PSRR Performance
Figure 40. Load Transient Response, IOUT 0 mA to 100 mA
9 Power Supply Recommendations
This device is designed to operate from an input supply voltage range of 2.5 V to 16 V. To ensure that the output
voltage is well regulated and dynamic performance is optimum, the input supply must be at least VOUT(nom)
+
1.5 V. For 1-A output current operation, the input supply must be 3 V or greater. Connect a low output
impedance power supply directly to the input pin of the TLV767.
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10 Layout
10.1 Layout Guidelines
•
•
•
Place input and output capacitors as close to the device as possible
Use copper planes for device connections to IN, OUT, and GND pins to optimize thermal performance
Place thermal vias around the device to distribute heat
10.2 Layout Examples
VIN
CIN
VOUT
CFF
(opt.)
VOUT
VIN
CIN
R1
COUT
1
6
5
1
6
5
COUT
2
GND
2
GND
FB
3
4
EN
EN
3
4
R2
GND PLANE
GND PLANE
Represents via used for application-specific connections
Represents via used for application-specific connections
Figure 42. Layout Example for the Adjustable
WSON Version
Figure 43. Layout Example for the Fixed WSON
Version
VOUT
VIN
VOUT
VIN
COUT
CFF
(OPT)
1
2
3
4
1
2
3
4
8
7
6
5
8
7
6
5
COUT
R1
R2
CIN
CIN
FB
GND
GND
EN
EN
GND PLANE
Represents via used for application-specific connections
GND PLANE
Represents via used for application-specific connections
Figure 44. Layout Example for the Fixed HVSSOP
Version
Figure 45. Layout Example for the Adjustable
HVSSOP Version
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TLV767
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SLVSE84C –DECEMBER 2018–REVISED JUNE 2020
11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
Table 3. Available Options(1)
PRODUCT
VOUT
xx(x) is nominal output voltage. For output voltages with a resolution of 100 mV, two
digits are used in the ordering number; otherwise, three digits are used (for example, 33
= 3.3 V; 125 = 1.25 V). 01 indicates adjustable output version.
yyy is package designator.
TLV767xx(x)yyyz
z is package quantity. R is for large quantity reel, T is for small quantity reel.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
11.2 Documentation Support
11.2.1 Related Documentation
For related documentation see the following:
•
•
Texas Instruments, TLV767EVM-014 Evaluation module user's guide
Texas Instruments, Pros and cons of using a feedforward capacitor with a low-dropout regulator application
report
•
•
Texas Instruments, Know your limits application report
Texas Instruments, Universal low-dropout (LDO) linear voltage regulator MultiPkgLDOEVM-823 evaluation
module user's guide
11.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.4 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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Product Folder Links: TLV767
PACKAGE OPTION ADDENDUM
www.ti.com
2-May-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TLV76701DGNR
PREVIEW
HVSSOP
DGN
8
2500
Non-RoHS &
Non-Green
Call TI
Call TI
-40 to 125
TLV76701DRVR
TLV76701DRVT
TLV76708DGNR
ACTIVE
ACTIVE
WSON
WSON
DRV
DRV
DGN
6
6
8
3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
-40 to 125
-40 to 125
-40 to 125
1RMH
250
RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
1RMH
PREVIEW
HVSSOP
2500
Non-RoHS &
Non-Green
Call TI
Call TI
TLV76708DRVR
TLV76708DRVT
TLV76718DGNR
TLV76718DRVR
TLV76718DRVT
TLV76725DGNR
TLV76728DGNR
TLV76728DRVR
TLV76728DRVT
TLV76733DGNR
TLV76733DRVR
TLV76733DRVT
TLV76750DGNR
TLV76750DRVR
TLV76750DRVT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
WSON
WSON
DRV
DRV
DGN
DRV
DRV
DGN
DGN
DRV
DRV
DGN
DRV
DRV
DGN
DRV
DRV
6
6
8
6
6
8
8
6
6
8
6
6
8
6
6
3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR
3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
1RNH
1RNH
2BMX
1ROH
1ROH
2GT7
2BNX
1RPH
1RPH
2BOX
1RQH
1RQH
2BPX
1RRH
1RRH
HVSSOP
WSON
WSON
HVSSOP
HVSSOP
WSON
2500 RoHS & Green
2500 RoHS & Green
NIPDAUAG
NIPDAUAG
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR
3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR
3000 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
250 RoHS & Green NIPDAU | NIPDAUAG Level-2-260C-1 YEAR
WSON
HVSSOP
WSON
WSON
HVSSOP
WSON
WSON
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
2-May-2021
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLV767 :
Automotive : TLV767-Q1
•
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2021
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLV76701DRVR
TLV76701DRVT
TLV76708DRVR
TLV76708DRVR
TLV76708DRVT
TLV76708DRVT
TLV76718DGNR
TLV76718DRVR
TLV76718DRVR
TLV76718DRVT
TLV76718DRVT
TLV76725DGNR
TLV76728DGNR
TLV76728DRVR
TLV76728DRVR
TLV76728DRVT
TLV76728DRVT
TLV76733DGNR
WSON
WSON
WSON
WSON
WSON
WSON
DRV
DRV
DRV
DRV
DRV
DRV
6
6
6
6
6
6
8
6
6
6
6
8
8
6
6
6
6
8
3000
250
180.0
180.0
178.0
180.0
178.0
180.0
330.0
178.0
180.0
180.0
178.0
330.0
330.0
180.0
178.0
180.0
178.0
330.0
8.4
8.4
8.4
8.4
8.4
8.4
12.4
8.4
8.4
8.4
8.4
12.4
12.4
8.4
8.4
8.4
8.4
12.4
2.3
2.3
2.3
2.3
1.15
1.15
1.0
4.0
4.0
4.0
4.0
4.0
4.0
8.0
4.0
4.0
4.0
4.0
8.0
8.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
8.0
12.0
8.0
8.0
8.0
8.0
12.0
12.0
8.0
8.0
8.0
8.0
12.0
Q2
Q2
Q2
Q2
Q2
Q2
Q1
Q2
Q2
Q2
Q2
Q1
Q1
Q2
Q2
Q2
Q2
Q1
3000
3000
250
2.25
2.3
2.25
2.3
1.15
1.0
2.25
2.3
2.25
2.3
250
1.15
1.4
HVSSOP DGN
2500
3000
3000
250
5.3
3.4
WSON
WSON
WSON
WSON
DRV
DRV
DRV
DRV
2.25
2.3
2.25
2.3
1.0
1.15
1.15
1.0
2.3
2.3
250
2.25
5.3
2.25
3.4
HVSSOP DGN
HVSSOP DGN
2500
2500
3000
3000
250
1.4
5.3
3.4
1.4
WSON
WSON
WSON
WSON
DRV
DRV
DRV
DRV
2.3
2.3
1.15
1.0
2.25
2.3
2.25
2.3
1.15
1.0
250
2.25
5.3
2.25
3.4
HVSSOP DGN
2500
1.4
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2021
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TLV76733DRVR
TLV76733DRVR
TLV76733DRVT
TLV76733DRVT
TLV76750DGNR
TLV76750DRVR
TLV76750DRVR
TLV76750DRVT
TLV76750DRVT
WSON
WSON
WSON
WSON
DRV
DRV
DRV
DRV
6
6
6
6
8
6
6
6
6
3000
3000
250
180.0
178.0
178.0
180.0
330.0
180.0
178.0
180.0
178.0
8.4
8.4
8.4
8.4
12.4
8.4
8.4
8.4
8.4
2.3
2.25
2.25
2.3
2.3
2.25
2.25
2.3
1.15
1.0
4.0
4.0
4.0
4.0
8.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
12.0
8.0
8.0
8.0
8.0
Q2
Q2
Q2
Q2
Q1
Q2
Q2
Q2
Q2
1.0
250
1.15
1.4
HVSSOP DGN
2500
3000
3000
250
5.3
3.4
WSON
WSON
WSON
WSON
DRV
DRV
DRV
DRV
2.3
2.3
1.15
1.0
2.25
2.3
2.25
2.3
1.15
1.0
250
2.25
2.25
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TLV76701DRVR
TLV76701DRVT
TLV76708DRVR
TLV76708DRVR
TLV76708DRVT
TLV76708DRVT
TLV76718DGNR
TLV76718DRVR
WSON
WSON
WSON
WSON
WSON
WSON
HVSSOP
WSON
DRV
DRV
DRV
DRV
DRV
DRV
DGN
DRV
6
6
6
6
6
6
8
6
3000
250
210.0
210.0
205.0
210.0
205.0
210.0
366.0
205.0
185.0
185.0
200.0
185.0
200.0
185.0
364.0
200.0
35.0
35.0
33.0
35.0
33.0
35.0
50.0
33.0
3000
3000
250
250
2500
3000
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-May-2021
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TLV76718DRVR
TLV76718DRVT
TLV76718DRVT
TLV76725DGNR
TLV76728DGNR
TLV76728DRVR
TLV76728DRVR
TLV76728DRVT
TLV76728DRVT
TLV76733DGNR
TLV76733DRVR
TLV76733DRVR
TLV76733DRVT
TLV76733DRVT
TLV76750DGNR
TLV76750DRVR
TLV76750DRVR
TLV76750DRVT
TLV76750DRVT
WSON
WSON
WSON
HVSSOP
HVSSOP
WSON
WSON
WSON
WSON
HVSSOP
WSON
WSON
WSON
WSON
HVSSOP
WSON
WSON
WSON
WSON
DRV
DRV
DRV
DGN
DGN
DRV
DRV
DRV
DRV
DGN
DRV
DRV
DRV
DRV
DGN
DRV
DRV
DRV
DRV
6
6
6
8
8
6
6
6
6
8
6
6
6
6
8
6
6
6
6
3000
250
210.0
210.0
205.0
366.0
366.0
210.0
205.0
210.0
205.0
366.0
210.0
205.0
205.0
210.0
366.0
210.0
205.0
210.0
205.0
185.0
185.0
200.0
364.0
364.0
185.0
200.0
185.0
200.0
364.0
185.0
200.0
200.0
185.0
364.0
185.0
200.0
185.0
200.0
35.0
35.0
33.0
50.0
50.0
35.0
33.0
35.0
33.0
50.0
35.0
33.0
33.0
35.0
50.0
35.0
33.0
35.0
33.0
250
2500
2500
3000
3000
250
250
2500
3000
3000
250
250
2500
3000
3000
250
250
Pack Materials-Page 3
GENERIC PACKAGE VIEW
DRV 6
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4206925/F
PACKAGE OUTLINE
DRV0006A
WSON - 0.8 mm max height
SCALE 5.500
PLASTIC SMALL OUTLINE - NO LEAD
2.1
1.9
A
B
PIN 1 INDEX AREA
2.1
1.9
0.8
0.7
C
SEATING PLANE
0.08 C
(0.2) TYP
0.05
0.00
1
0.1
EXPOSED
THERMAL PAD
3
4
6
2X
7
1.3
1.6 0.1
1
4X 0.65
0.35
0.25
6X
PIN 1 ID
(OPTIONAL)
0.3
0.2
6X
0.1
C A
C
B
0.05
4222173/B 04/2018
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DRV0006A
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
6X (0.45)
6X (0.3)
(1)
1
7
6
SYMM
(1.6)
(1.1)
4X (0.65)
4
3
SYMM
(1.95)
(R0.05) TYP
(
0.2) VIA
TYP
LAND PATTERN EXAMPLE
SCALE:25X
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4222173/B 04/2018
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.
www.ti.com
EXAMPLE STENCIL DESIGN
DRV0006A
WSON - 0.8 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
SYMM
7
6X (0.45)
METAL
1
6
6X (0.3)
(0.45)
SYMM
4X (0.65)
(0.7)
4
3
(R0.05) TYP
(1)
(1.95)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD #7
88% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:30X
4222173/B 04/2018
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
GENERIC PACKAGE VIEW
DGN 8
3 x 3, 0.65 mm pitch
PowerPAD VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4225482/A
www.ti.com
PACKAGE OUTLINE
DGN0008G
PowerPADTM VSSOP - 1.1 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE PACKAGE
C
5.05
4.75
TYP
A
0.1 C
SEATING
PLANE
PIN 1 INDEX AREA
6X 0.65
8
1
2X
3.1
2.9
1.95
NOTE 3
4
5
0.38
8X
0.25
3.1
2.9
0.13
C A B
B
NOTE 4
0.23
0.13
SEE DETAIL A
EXPOSED THERMAL PAD
4
5
0.25
GAGE PLANE
2.15
1.95
9
1.1 MAX
8
0.15
0.05
1
0.7
0.4
0 -8
A
20
DETAIL A
TYPICAL
1.846
1.646
4225480/A 11/2019
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187.
www.ti.com
EXAMPLE BOARD LAYOUT
DGN0008G
PowerPADTM VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(2)
NOTE 9
(1.846)
SYMM
METAL COVERED
BY SOLDER MASK
SOLDER MASK
DEFINED PAD
8X (1.4)
(R0.05) TYP
8
8X (0.45)
1
(3)
NOTE 9
SYMM
9
(2.15)
(1.22)
6X (0.65)
5
4
(
0.2) TYP
VIA
SEE DETAILS
(0.55)
(4.4)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE: 15X
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
METAL
EXPOSED METAL
EXPOSED METAL
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
NON-SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
15.000
(PREFERRED)
SOLDER MASK DETAILS
4225480/A 11/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
9. Size of metal pad may vary due to creepage requirement.
www.ti.com
EXAMPLE STENCIL DESIGN
DGN0008G
PowerPADTM VSSOP - 1.1 mm max height
SMALL OUTLINE PACKAGE
(1.846)
BASED ON
0.125 THICK
STENCIL
SYMM
(R0.05) TYP
8X (1.4)
8
1
8X (0.45)
(2.15)
SYMM
BASED ON
0.125 THICK
STENCIL
6X (0.65)
5
4
METAL COVERED
BY SOLDER MASK
SEE TABLE FOR
DIFFERENT OPENINGS
FOR OTHER STENCIL
THICKNESSES
(4.4)
SOLDER PASTE EXAMPLE
EXPOSED PAD 9:
100% PRINTED SOLDER COVERAGE BY AREA
SCALE: 15X
STENCIL
THICKNESS
SOLDER STENCIL
OPENING
0.1
2.06 X 2.40
1.846 X 2.15 (SHOWN)
1.69 X 1.96
0.125
0.15
0.175
1.56 X 1.82
4225480/A 11/2019
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
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