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TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

The robust design of the TLV900x family simplifies

circuit design. The op amps feature unity-gain

stability, an integrated RFI and EMI rejection filter,

and no-phase reversal in overdrive conditions.

1 Features

1

•

Scalable CMOS amplifier for low-cost applications

Rail-to-rail input and output

Low input offset voltage: ±0.4 mV

Unity-gain bandwidth: 1 MHz

The TLV900x devices include a shutdown mode

(TLV9001S, TLV9002S and TLV9004S) that allow the

amplifiers to switch off into standby mode with typical

current consumption less than 1 µA.

Low broadband noise: 27 nV/√Hz

Low input bias current: 5 pA

Micro-size packages, such as SOT-553 and WSON,

are offered for all channel variants (single, dual, and

quad), along with industry-standard packages such

as SOIC, MSOP, SOT-23, and TSSOP packages.

Low quiescent current: 60 µA/Ch

Unity-gain stable

Internal RFI and EMI filter

Operational at supply voltages as low as 1.8 V

Device Information⁽¹⁾

Easier to stabilize with higher capacitive load due

to resistive open-loop output impedance

PART NUMBER

PACKAGE

BODY SIZE (NOM)

1.60 mm × 2.90 mm

1.25 mm × 2.00 mm

1.65 mm × 1.20 mm

0.80 mm × 0.80 mm

1.60 mm × 2.90 mm

1.25 mm × 2.00 mm

3.91 mm × 4.90 mm

2.00 mm × 2.00 mm

3.00 mm × 3.00 mm

1.60 mm × 2.90 mm

3.00 mm × 4.40 mm

3.00 mm × 3.00 mm

1.50 mm × 2.00 mm

8.65 mm × 3.91 mm

4.40 mm × 5.00 mm

3.00 mm × 3.00 mm

2.00 mm × 2.00 mm

3.00 mm × 3.00 mm

SOT-23 (5)

•

Extended temperature range: –40°C to 125°C

SC70 (5)

TLV9001

SOT-553 (5)⁽²⁾

X2SON (5)

SOT-23 (6)

SC70 (6)

2 Applications

•

Smoke detectors

Motion detectors

TLV9001S

TLV9002

Wearable devices

SOIC (8)

Large and small appliances

EPOS

WSON (8)

VSSOP (8)

SOT-23 (8)

TSSOP (8)

VSSOP (10)

X2QFN (10)

SOIC (14)

TSSOP (14)

WQFN (16)

X2QFN (14)

WQFN (16)

Barcode scanners

Sensor signal conditioning

Power modules

TLV9002S

Personal electronics

Active filters

HVAC: heating, ventilating, and air conditioning

Motor control: AC induction

Low-side current sensing

TLV9004

TLV9004S

3 Description

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

The TLV900x family includes single (TLV9001), dual

(TLV9002), and quad-channel (TLV9004) low-voltage

(1.8 V to 5.5 V) operational amplifiers (op amps) with

rail-to-rail input and output swing capabilities. These

op amps provide a cost-effective solution for space-

constrained applications such as smoke detectors,

wearable electronics, and small appliances where

low-voltage operation and high capacitive-load drive

are required. The capacitive-load drive of the

TLV900x family is 500 pF, and the resistive open-

loop output impedance makes stabilization easier

with much higher capacitive loads. These op amps

are designed specifically for low-voltage operation

(1.8 V to 5.5 V) with performance specifications

similar to the TLV600x devices.

(2) Package is for preview only.

Single-Pole, Low-Pass Filter

R_G

R_F

R₁

V_OUT

V_IN

C₁

1

2pR₁C₁

f

=

-3 dB

V_OUT

V_IN

R_F

1

1 + sR₁C₁

=

1 +

(

R_G

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

www.ti.com

Table of Contents

8.2 Functional Block Diagram ....................................... 25

8.3 Feature Description................................................. 26

8.4 Device Functional Modes........................................ 27

Application and Implementation ........................ 28

9.1 Application Information............................................ 28

9.2 Typical Application .................................................. 28

1

2

3

4

5

6

7

Features.................................................................. 1

Applications ........................................................... 1

Description ............................................................. 1

Revision History..................................................... 2

Device Comparison Table..................................... 6

Pin Configuration and Functions......................... 7

Specifications....................................................... 14

7.1 Absolute Maximum Ratings .................................... 14

7.2 ESD Ratings............................................................ 14

7.3 Recommended Operating Conditions..................... 14

7.4 Thermal Information: TLV9001 ............................... 15

7.5 Thermal Information: TLV9001S............................. 15

7.6 Thermal Information: TLV9002 ............................... 15

7.7 Thermal Information: TLV9002S............................. 15

7.8 Thermal Information: TLV9004 ............................... 16

7.9 Thermal Information: TLV9004S............................. 16

7.10 Electrical Characteristics....................................... 17

7.11 Typical Characteristics.......................................... 19

Detailed Description ............................................ 25

8.1 Overview ................................................................. 25

9

10 Power Supply Recommendations ..................... 33

10.1 Input and ESD Protection ..................................... 33

11 Layout................................................................... 34

11.1 Layout Guidelines ................................................. 34

11.2 Layout Example .................................................... 34

12 Device and Documentation Support ................. 35

12.1 Documentation Support ........................................ 35

12.2 Related Links ........................................................ 35

12.3 Receiving Notification of Documentation Updates 35

12.4 Support Resources ............................................... 35

12.5 Trademarks........................................................... 35

12.6 Electrostatic Discharge Caution............................ 35

12.7 Glossary................................................................ 35

8

13 Mechanical, Packaging, and Orderable

Information ........................................................... 35

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision N (January 2020) to Revision O

Page

•

Deleted PREVIEW designation on TLV9001S ...................................................................................................................... 1

Deleted TLV9001SIDCK (6-pin SC70) package preview note .............................................................................................. 8

Added DCK (SC70) data to the Thermal Information: TLV9001S table .............................................................................. 15

Changes from Revision M (September 2019) to Revision N

Page

•

Added 6-pin SC70 package to Device Information table ....................................................................................................... 1

Added 6-pin SC70 package to Device Comparison Table..................................................................................................... 6

Added TLV9001SIDCK (6-Pin SC70) package pinout ........................................................................................................... 8

Added TLV9001S 6-pin SC70 package to Pin Configuration and Functions section ............................................................ 8

Added 6-pin SC70 pinout to Pin Functions: TLV9001S ......................................................................................................... 8

Added TLV9001S 6-pin SC70 package to Thermal Information: TLV9001S table .............................................................. 15

Changes from Revision L (May 2019) to Revision M

Page

•

Deleted preview notations for SOT-23-8 (DDF) package....................................................................................................... 6

Added link to Shutdown section in all SHDN pin function rows ............................................................................................. 8

Added EMI Rejection section to the Feature Description section ........................................................................................ 26

Changed the Shutdown section to add more clarity regarding internal pull-up resistor....................................................... 27

2

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Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

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SBOS833O –OCTOBER 2017–REVISED APRIL 2020

Changes from Revision K (March 2019) to Revision L

Page

•

Added SOT-23 (8) information to Device Information table ................................................................................................... 1

Added SOT-23 DDF package to Device Comparison Table ................................................................................................. 6

Added SOT-23 (DDF) to Pin Configuration and Functions section........................................................................................ 9

Added DDF (SOT-23) Thermal Information: TLV9002 table................................................................................................ 15

Changes from Revision J (January 2019) to Revision K

Page

•

Changed TLV9002S ESD Ratings heading to include all TLV9002S packages.................................................................. 14

Deleted preview notation from TLV9002SIRUG in Thermal Information table..................................................................... 15

Changes from Revision I (November 2018) to Revision J

Page

•

Deleted preview notation for TLV9002SIRUGR ..................................................................................................................... 1

Changed TLV9004 WQFN(14) package designator to X2QFN(14) package designator ...................................................... 1

Added RUG package to Device Comparison Table .............................................................................................................. 6

Added DGS package to Device Comparison Table .............................................................................................................. 6

Added shutdown devices to Device Comparison Table ........................................................................................................ 6

Changed TLV9001 DRL package pinout drawing.................................................................................................................. 7

Changed TLV9001 DRL package pin functions ..................................................................................................................... 7

Deleted package preview note from TLV9002SIRUGR (X2QFN) pinout drawing ............................................................... 10

Added TLV9004IRUC Thermal Information.......................................................................................................................... 16

Changed legend of Closed-Loop Gain vs Frequency plot ................................................................................................... 19

Changes from Revision H (October 2018) to Revision I

Page

•

Added TLV9002SIDGS to ESD Ratings table...................................................................................................................... 14

Changes from Revision G (September 2018) to Revision H

Page

•

Changed From: TLV9001 DCK Package To: TLV9001T DCK Package ............................................................................... 7

Changes from Revision F (August 2018) to Revision G

Page

•

Added Device Comparison Table........................................................................................................................................... 6

Changed pin names for all devices and all packages............................................................................................................ 7

Changed pin names and I/O designation on some TLV9001 pins ........................................................................................ 7

Changed the pin number for V+ in the SOIC, TSSOP column of the Pin Functions: TLV9004 table.................................. 12

Changes from Revision E (July 2018) to Revision F

Page

•

Added Scalabe CMOS Amplifier for Low-Cost Applications feature ...................................................................................... 1

Deleted PREVIEW designation on TLV9002 and TLV9004 devices with the TSSOP package. .......................................... 1

Added TLV9001U DBV (SOT-23) pinout drawing to Pin Configuration and Functions section ............................................ 7

Added SOT-23 U Pinout to Pin Functions section ................................................................................................................ 7

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3

Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

www.ti.com

Changes from Revision D (June 2018) to Revision E

Page

•

Corrected typo in Description section .................................................................................................................................... 1

Added TLV9001 5-pin X2SON package to Device Information table .................................................................................... 1

Added TLV9001S 6-pin SOT-23 package to Device Information table.................................................................................. 1

Added TLV9004 14-pin and 16-pin WQFN packages to Device Information table ............................................................... 1

Added TLV9001 DPW (X2SON) pinout drawing to Pin Configuration and Functions section............................................... 7

Added TLV9001S 6-pin SOT-23 package to Pin Configuration and Functions section......................................................... 8

Added TLV9004 RTE pinout information to Pin Configuration and Functions section ........................................................ 11

Added DPW (X2SON) and DRL (SOT-553) packages to Thermal Information: TLV9001 table ......................................... 15

Added Thermal Information: TLV9001S table to Specifications section .............................................................................. 15

Added RUG (X2QFN) package to Thermal Information: TLV9002 table ............................................................................. 15

Added RTE (WQFN) and RUC (WQFN) packages to Thermal Information: TLV9004 table............................................... 16

Changes from Revision C (May 2018) to Revision D

Page

•

Added shutdown text to Description section .......................................................................................................................... 1

Added TLV9002S and TLV9004S devices to Device Information table................................................................................. 1

Added TLV9002S 10-pin X2QFN package to Device Information table ................................................................................ 1

Added TLV9002S DGS package pinout information to Pin Configurations and Functions section ....................................... 9

Added Thermal Information: TLV9001 table to Specifications section................................................................................. 15

Added Thermal Information: TLV9004 table to Specifications section................................................................................. 16

Added shutdown section to Electrical Characteristics: V_S(Total Supply Voltage) = (V+) – (V–) = 1.8 V to 5.5 V table...... 17

Added Shutdown section...................................................................................................................................................... 27

Changes from Revision B (March 2018) to Revision C

Page

•

Added TLV9002 16-pin TSSOP package to Device Information table................................................................................... 1

Added TLV9002 10-pin X2QFN package to Device Information table................................................................................... 1

Added TLV9002S DGS package pinout drawing in Pin Configurations and Functions section........................................... 10

Added TLV9004 pinout diagram and pin configuration table to Pin Configuration and Functions section ......................... 11

Added TLV9004S pinout diagram and pin configuration table to Pin Configuration and Functions section ....................... 13

Changed TLV9002 D (SOIC) junction-to-ambient thermal resistance value from 147.4°C/W to 207.9°C/W ...................... 15

Changed TLV9002 D (SOIC) junction-to-case (top) thermal resistance from 94.3°C/W to 92.8°C/W................................. 15

Changed TLV9002 D (SOIC) junction-to-board thermal resistance from 89.5°C/W to 129.7°C/W...................................... 15

Changed TLV9002 D (SOIC) junction-to-top characterization parameter from 47.3°C/W to 26°C/W ................................. 15

Changed TLV9002 D (SOIC) junction-to-board characterization parameter from 89°C/W to 127.9°C/W ........................... 15

Added DGK (VSSOP) thermal information to Thermal Information: TLV9002 table ........................................................... 15

Added TLV9002 PW (TSSOP) thermal information to Thermal Information: TLV9002 table .............................................. 15

Added PW (TSSOP) thermal information to Thermal Information: TLV9002 table ............................................................. 16

Changes from Revision A (December 2017) to Revision B

Page

•

Added package preview notes to TLV9001 packages, TLV9004 packages, and TLV9002 8-pin VSSOP package in

Device Information table ........................................................................................................................................................ 1

•

Added package preview notes to TLV9001, TLV9004 and TLV9002 VSSOP package pinout drawings in Pin

Configuration and Functions section ..................................................................................................................................... 7

•

Deleted package preview note from TLV9002 DSG (WSON) pinout drawing in Pin Configurations and Functions section. 9

4

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Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

www.ti.com

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

•

Deleted package preview note from TLV9002 RUG (X2QFN) pinout drawing in Pin Configurations and Functions

section .................................................................................................................................................................................. 10

•

Added DSG (WSON) package thermal information to the Thermal Information: TLV9002 table ........................................ 15

Deleted package preview note from DSG (WSON) package in Thermal Information: TLV9002 table................................ 15

Added D (SOIC) package thermal information to the Thermal Information: TLV9004 table................................................ 16

Changes from Original (October 2017) to Revision A

Page

•

Changed device status from Advance Information to Production Data/Mixed Status............................................................ 1

Submit Documentation Feedback

5

Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

www.ti.com

5 Device Comparison Table

PACKAGE LEADS

NO.

DEVICE

OF

CH.

SC70

DCK

SOIC

D

SOT-23 SOT-553 TSSOP

VSSOP

DGK

SOT-23

DDF

WQFN WSON X2QFN X2SON X2QFN

VSSOP

DGS

DBV

DRL

PW

—

8

RTE

DSG

RUC

DPW

RUG

TLV9001

TLV9001S

TLV9002

TLV9002S

TLV9004

TLV9004S

5

—

8

5

—

8

—

5

—

10

—

1

2

4

6

—

8

—

8

—

14

—

14

—

10

—

16

—

14

—

6

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Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

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SBOS833O –OCTOBER 2017–REVISED APRIL 2020

6 Pin Configuration and Functions

TLV9001 DBV, TLV9001T DCK Packages

5-Pin SOT-23, SC70

TLV9001 DCK Package, TLV9001 DRL Package, TLV9001U

DBV Package

5-Pin SC70, SOT-553, SOT-23

Top View

OUT

Vœ

1

2

3

5

V+

IN+

Vœ

1

2

3

5

V+

IN+

4

INœ

4

OUT

Not to scale

TLV9001 DPW Package

5-Pin X2SON

Top View

OUT

1

5

V+

3

Vœ

INœ

2

4

IN+

Not to scale

Pin Functions: TLV9001

SC70,

SOT-23(U),

SOT-553

I/O

DESCRIPTION

SOT-23,

SC70(T)

NAME

IN–

X2SON

4

3

1

2

5

3

1

4

2

5

2

4

1

3

5

I

Inverting input

IN+

OUT

V–

Noninverting input

Output

O

I or — Negative (low) supply or ground (for single-supply operation)

Positive (high) supply

V+

I

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7

Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

www.ti.com

TLV9001S DBV Package

6-Pin SOT-23

TLV9001S DCK Package

6-Pin SC70

Top View

OUT

Vœ

1

2

3

6

5

4

V+

IN+

Vœ

1

2

3

6

5

4

V+

SHDN

INœ

SHDN

OUT

IN+

INœ

Not to scale

Pin Functions: TLV9001S

I/O

DESCRIPTION

NAME

IN–

SOT-23

SC70

4

3

1

3

1

4

I

Inverting input

Noninverting input

Output

IN+

I

OUT

O

Shutdown: low = amp disabled, high = amp enabled. See Shutdown section for

more information.

SHDN

5

I

V–

V+

2

6

2

6

I or —

I

Negative (low) supply or ground (for single-supply operation)

Positive (high) supply

8

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Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

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SBOS833O –OCTOBER 2017–REVISED APRIL 2020

TLV9002 D, DGK, PW, DDF Packages

8-Pin SOIC, VSSOP, TSSOP, SOT-23

Top View

TLV9002 DSG Package

8-Pin WSON With Exposed Thermal Pad

Top View

OUT1

1

2

3

4

8

7

6

5

V+

IN1œ

IN1+

Vœ

OUT2

IN2œ

IN2+

OUT1

IN1œ

IN1+

Vœ

1

2

3

4

8

7

6

5

V+

OUT2

IN2œ

IN2+

Thermal

Pad

Not to scale

(1) Connect thermal pad to V–.

Pin Functions: TLV9002

I/O

DESCRIPTION

NAME

IN1–

NO.

2

I

Inverting input, channel 1

Noninverting input, channel 1

Inverting input, channel 2

Noninverting input, channel 2

Output, channel 1

IN1+

IN2–

IN2+

OUT1

OUT2

V–

3

6

I

5

I

1

O

7

Output, channel 2

4

I or — Negative (low) supply or ground (for single-supply operation)

Positive (high) supply

V+

8

I

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9

Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

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TLV9002S DGS Package

10-Pin VSSOP

TLV9002S RUG Package

10-Pin X2QFN

Top View

OUT1

IN1œ

1

2

3

4

5

10

9

V+

OUT2

IN2œ

IN2+

SHDN2

IN1+

8

Vœ

SHDN1

SHDN2

IN2+

1

2

3

4

9

8

7

6

IN1œ

OUT1

V+

Vœ

7

SHDN1

6

Not to scale

OUT2

Not to scale

Pin Functions: TLV9002S

I/O

DESCRIPTION

NAME

VSSOP

X2QFN

IN1–

2

3

8

7

1

9

10

5

I

Inverting input, channel 1

Noninverting input, channel 1

Inverting input, channel 2

Noninverting input, channel 2

Output, channel 1

IN1+

IN2–

I

IN2+

OUT1

OUT2

4

I

8

O

6

Output, channel 2

Shutdown: low = amp disabled, high = amp enabled, channel 1. See Shutdown

section for more information.

SHDN1

SHDN2

5

6

2

3

I

Shutdown: low = amp disabled, high = amp enabled, channel 1. See Shutdown

section for more information.

V–

V+

4

1

7

I or —

I

Negative (low) supply or ground (for single-supply operation)

Positive (high) supply

10

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SBOS833O –OCTOBER 2017–REVISED APRIL 2020

TLV9004 D, PW Packages

14-Pin SOIC, TSSOP

Top View

TLV9004 RTE Package

16-Pin WQFN With Exposed Thermal Pad

Top View

OUT1

IN1œ

IN1+

V+

1

2

3

4

5

6

7

14

13

12

11

10

9

OUT4

IN4œ

IN4+

Vœ

IN1+

V+

1

2

3

4

12

11

10

9

IN4+

Vœ

IN2+

IN2œ

OUT2

IN3+

IN3œ

OUT3

Thermal

Pad

IN2+

IN2œ

IN3+

IN3œ

8

Not to scale

TLV9004 RUC Package

14-Pin X2QFN

Top View

Not to scale

(1) Connect thermal pad to V–.

IN1œ

IN1+

V+

1

2

3

4

5

12

11

10

9

IN4œ

IN4+

Vœ

IN2+

IN2œ

IN3+

IN3œ

8

Not to scale

Pin Functions: TLV9004

I/O

DESCRIPTION

SOIC,

TSSOP

NAME

WQFN

X2QFN

IN1–

IN1+

IN2–

IN2+

IN3–

IN3+

IN4–

IN4+

2

3

16

1

2

I

Inverting input, channel 1

Noninverting input, channel 1

Inverting input, channel 2

Noninverting input, channel 2

Inverting input, channel 3

Noninverting input, channel 3

Inverting input, channel 4

Noninverting input, channel 4

6

4

5

3

4

9

8

10

13

12

10

13

12

9

12

11

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11

Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

www.ti.com

Pin Functions: TLV9004 (continued)

I/O

DESCRIPTION

SOIC,

TSSOP

NAME

NC

WQFN

X2QFN

—

1

6, 7

15

5

—

14

6

—

O

No internal connection

Output, channel 1

Output, channel 2

Output, channel 3

Output, channel 4

OUT1

OUT2

OUT3

OUT4

V–

7

8

7

14

11

4

14

11

2

13

10

3

I or — Negative (low) supply or ground (for single-supply operation)

Positive (high) supply

V+

I

12

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SBOS833O –OCTOBER 2017–REVISED APRIL 2020

TLV9004S RTE Package

16-Pin WQFN With Exposed Thermal Pad

Top View

IN1+

V+

1

2

3

4

12

11

10

9

IN4+

Vœ

Thermal

Pad

IN2+

IN2œ

IN3+

IN3œ

Not to scale

(1) Connect thermal pad to V–.

Pin Functions: TLV9004S

I/O

DESCRIPTION

NAME

IN1+

NO.

1

I

Noninverting input

IN1–

IN2+

IN2–

IN3+

IN3–

IN4+

IN4–

16

3

Inverting input

Noninverting input

Inverting input

4

10

9

Noninverting input

Inverting input

12

13

Noninverting input

Inverting input

Shutdown: low = amp disabled, high = amp enabled, channel 1 & 2. See Shutdown section

for more information.

SHDN12

SHDN34

6

7

I

Shutdown: low = amp disabled, high = amp enabled, channel 3 & 4. See Shutdown section

for more information.

OUT1

OUT2

OUT3

OUT4

V–

15

5

O

Output

O

Output

8

O

Output

14

11

2

O

I or —

I

Output

Negative (low) supply or ground (for single-supply operation)

Positive (high) supply

V+

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13

Product Folder Links: TLV9001 TLV9002 TLV9004

TLV9001, TLV9002, TLV9004

SBOS833O –OCTOBER 2017–REVISED APRIL 2020

www.ti.com

7 Specifications

7.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)⁽¹⁾

MIN

(V–) – 0.5

–10

MAX

UNIT

V

Supply voltage (V+) – (V–)

6

Common-mode

Differential

(V+) + 0.5

V

Voltage⁽²⁾

Current⁽²⁾

Signal input pins

(V+) – (V–) + 0.2

V

10

mA

Output short-circuit⁽³⁾

Operating, T_A

Junction, T_J

Continuous

150

–55

°C

150

Storage, T_stg

–65

150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Input pins are diode-clamped to the power-supply rails. Input signals that may swing more than 0.5 V beyond the supply rails must be

current limited to 10 mA or less.

(3) Short-circuit to ground, one amplifier per package.

7.2 ESD Ratings

TLV9002S PACKAGE

VALUE

±1500

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾

V_(ESD)

Electrostatic discharge

V

ALL OTHER PACKAGES

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾

±2000

±1000

V_(ESD)

Electrostatic discharge

V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating temperature range (unless otherwise noted)

MIN

MAX

5.5

UNIT

V

V_S

T_A

Supply voltage

1.8

Specified temperature

–40

125

°C

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7.4 Thermal Information: TLV9001

TLV9001

DPW (X2SON) DRL (SOT-553)⁽²⁾UNIT

THERMAL METRIC⁽¹⁾

DBV (SOT-23)

5 PINS

232.9

DCK (SC70)

5 PINS

239.6

5 PINS

470.0

211.9

334.8

29.8

5 PINS

TBD

R_θJA

Junction-to-ambient thermal resistance

°C/W

R_θJC(top)Junction-to-case (top) thermal resistance

153.8

148.5

R_θJB

ψ_JT

Junction-to-board thermal resistance

100.9

82.3

Junction-to-top characterization parameter

Junction-to-board characterization parameter

77.2

54.5

ψ_JB

100.4

81.8

333.2

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

(2) This package option for TLV9001 is preview only.

7.5 Thermal Information: TLV9001S

TLV9001S

THERMAL METRIC⁽¹⁾

DBV (SOT-23)

6 PINS

232.9

DCK (SC70)

6 PINS

215.6

UNIT

R_θJA

R_θJC(top)

R_θJB

ψ_JT

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

153.8

146.4

100.9

72.0

Junction-to-top characterization parameter

Junction-to-board characterization parameter

77.2

55.0

ψ_JB

100.4

71.7

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

7.6 Thermal Information: TLV9002

TLV9002

D

DGK

(VSSOP)

DGS

(VSSOP)

DSG

(WSON)

PW

(TSSOP)

DDF

(SOT-23)

THERMAL METRIC⁽¹⁾

UNIT

(SOIC)

8 PINS

10 PINS

8 PINS

Junction-to-ambient

thermal resistance

R_θJA

R_θJC(top)

207.9

201.2

169.5

103.2

200.7

183.7

°C/W

Junction-to-case (top)

thermal resistance

92.8

85.7

84.1

113

120.1

68.8

95.4

112.5

98.2

Junction-to-board thermal

resistance

R_θJB

129.7

122.9

128.6

Junction-to-top

characterization

parameter

ψ_JT

26

21.2

15.8

14.7

68.5

27.2

18.8

97.6

°C/W

Junction-to-board

characterization

parameter

ψ_JB

127.9

121.4

111.6

127.2

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

7.7 Thermal Information: TLV9002S

TLV9002S

THERMAL METRIC⁽¹⁾

DGS (VSSOP)

10 PINS

169.5

RUG (X2QFN)

10 PINS

194.2

UNIT

R_θJA

R_θJC(top)

R_θJB

ψ_JT

Junction-to-ambient thermal resistance

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

°C/W

84.1

90.3

113

122.2

Junction-to-top characterization parameter

Junction-to-board characterization parameter

15.8

3.5

ψ_JB

111.6

118.8

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

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7.8 Thermal Information: TLV9004

TLV9004

PW (TSSOP)

THERMAL METRIC⁽¹⁾

D (SOIC)

14 PINS

RTE (WQFN)

16 PINS

RUC (X2QFN)

14 PINS

UNIT

14 PINS

Junction-to-ambient thermal

resistance

R_θJA

102.1

148.3

66.4

205.5

°C/W

Junction-to-case (top) thermal

resistance

R_θJC(top)

56.8

58.5

20.5

68.1

92.7

16.9

69.3

41.7

5.7

72.5

150.2

3.0

°C/W

R_θJB

Junction-to-board thermal resistance

Junction-to-top characterization

parameter

ψ_JT

Junction-to-board characterization

parameter

ψ_JB

58.1

91.8

41.5

149.6

°C/W

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

7.9 Thermal Information: TLV9004S

TLV9004S

THERMAL METRIC⁽¹⁾

RTE (WQFN)

16 PINS

66.4

UNIT

R_θJA

R_θJC(top)

R_θJB

ψ_JT

Junction-to-ambient thermal resistance

°C/W

Junction-to-case (top) thermal resistance

Junction-to-board thermal resistance

69.3

41.7

Junction-to-top characterization parameter

Junction-to-board characterization parameter

5.7

ψ_JB

41.5

(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.

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7.10 Electrical Characteristics

For V_S= (V+) – (V–) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V), T_A= 25°C, R_L= 10 kΩ connected to V_S/ 2, and V_CM= V_OUT

=

V_S/ 2 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFFSET VOLTAGE

V_S= 5 V

±0.4

±1.6

±2

V_OS

Input offset voltage

mV

V_S= 5 V, T_A= –40°C to 125°C

T_A= –40°C to 125°C

dV_OS/dT V_OSvs temperature

±0.6

105

µV/°C

dB

PSRR

Power-supply rejection ratio

V_S= 1.8 to 5.5 V, V_CM= (V–)

80

INPUT VOLTAGE RANGE

V_CM

Common-mode voltage range

No phase reversal, rail-to-rail input

(V–) – 0.1

(V+) + 0.1

V

V_S= 1.8 V, (V–) – 0.1 V < V_CM< (V+) – 1.4 V,

T_A= –40°C to 125°C

86

95

77

68

V_S= 5.5 V, (V–) – 0.1 V < V_CM< (V+) – 1.4 V,

T_A= –40°C to 125°C

CMRR

Common-mode rejection ratio

dB

V_S= 5.5 V, (V–) – 0.1 V < V_CM< (V+) + 0.1 V,

T_A= –40°C to 125°C

63

V_S= 1.8 V, (V–) – 0.1 V < V_CM< (V+) + 0.1 V,

T_A= –40°C to 125°C

INPUT BIAS CURRENT

I_B

Input bias current

Input offset current

V_S= 5 V

±5

±2

pA

I_OS

NOISE

Input voltage noise (peak-to-

peak)

E_n

ƒ = 0.1 Hz to 10 Hz, V_S= 5 V

4.7

µV_PP

ƒ = 1 kHz, V_S= 5 V

ƒ = 10 kHz, V_S= 5 V

ƒ = 1 kHz, V_S= 5 V

30

27

23

e_n

i_n

Input voltage noise density

nV/√Hz

fA/√Hz

Input current noise density

INPUT CAPACITANCE

C_ID

C_IC

Differential

1.5

5

pF

Common-mode

OPEN-LOOP GAIN

V_S= 5.5 V, (V–) + 0.05 V < V_O< (V+) – 0.05 V,

R_L= 10 kΩ

104

117

100

115

130

V_S= 1.8 V, (V–) + 0.04 V < V_O< (V+) – 0.04 V,

R_L= 10 kΩ

A_OL

Open-loop voltage gain

dB

V_S= 1.8 V, (V–) + 0.1 V < V_O< (V+) – 0.1 V,

R_L= 2 kΩ

V_S= 5.5 V, (V–) + 0.15 V < V_O< (V+) – 0.15 V,

R_L= 2 kΩ

FREQUENCY RESPONSE

GBW

φ_m

Gain-bandwidth product

V_S= 5 V

1

78

MHz

°

Phase margin

Slew rate

V_S= 5.5 V, G = 1

SR

V_S= 5 V

2

V/µs

To 0.1%, V_S= 5 V, 2-V step, G = +1, C_L= 100 pF

To 0.01%, V_S= 5 V, 2-V step, G = +1, C_L= 100 pF

V_S= 5 V, V_IN× gain > V_S

2.5

3

t_S

Settling time

µs

t_OR

Overload recovery time

0.85

Total harmonic distortion +

noise

V_S= 5.5 V, V_CM= 2.5 V, V_O= 1 V_RMS, G = +1,

ƒ = 1 kHz, 80-kHz measurement BW

THD+N

OUTPUT

0.004%

V_S= 5.5 V, R_L= 10 kΩ

V_S= 5.5 V, R_L= 2 kΩ

V_S= 5.5 V

10

35

20

55

Voltage output swing from

supply rails

V_O

mV

I_SC

Z_O

Short-circuit current

±40

1200

mA

Open-loop output impedance

V_S= 5 V, ƒ = 1 MHz

Ω

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Electrical Characteristics (continued)

For V_S= (V+) – (V–) = 1.8 V to 5.5 V (±0.9 V to ±2.75 V), T_A= 25°C, R_L= 10 kΩ connected to V_S/ 2, and V_CM= V_OUT

=

V_S/ 2 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLY

V_S

Specified voltage range

1.8 (±0.9)

5.5 (±2.75)

75

V

TLV9002, TLV9002S TLV9004,

TLV9004S

I_O= 0 mA, V_S= 5.5 V

60

I_Q

Quiescent current per amplifier

µA

TLV9001, TLV9001S

77

85

I_O= 0 mA, V_S= 5.5 V, T_A= –40°C to 125°C

SHUTDOWN⁽¹⁾

I_QSD

Quiescent current per amplifier V_S= 1.8 V to 5.5 V, all amplifiers disabled, SHDN = V_S–

0.5

1.5

µA

Output impedance during

V_S= 1.8 V to 5.5 V, amplifier disabled

shutdown

Z_SHDN

10 || 2

GΩ || pF

High level voltage shutdown

V_S= 1.8 V to 5.5 V

(V–) + 0.9

(V–) + 1.1

V

threshold (amplifier enabled)

Low level voltage shutdown

V_S= 1.8 V to 5.5 V

(V–) + 0.2 V (V–) + 0.7 V

threshold (amplifier disabled)

Amplifier enable time (full

shutdown)⁽²⁾⁽³⁾

V_S= 1.8 V to 5.5 V, full shutdown; G = 1,

V_OUT= 0.9 × V_S/ 2, R_Lconnected to V–

70

50

4

t_ON

µs

Amplifier enable time (partial

shutdown)⁽²⁾⁽³⁾

V_S= 1.8 V to 5.5 V, partial shutdown; G = 1,

V_OUT= 0.9 × V_S/ 2, R_Lconnected to V–

V_S= 1.8 V to 5.5 V, G = 1, V_OUT= 0.1 × V_S/ 2,

R_Lconnected to V–

t_OFF

Amplifier disable time⁽²⁾

µs

V_S= 1.8 V to 5.5 V, V+ ≥ SHDN ≥ (V+) – 0.8 V

V_S= 1.8 V to 5.5 V, V– ≤ SHDN ≤ V– + 0.8 V

40

SHDN pin input bias current

(per pin)

nA

150

(1) Specified by design and characterization; not production tested.

(2) Disable time (t_OFF) and enable time (t_ON) are defined as the time interval between the 50% point of the signal applied to the SHDN pin

and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level.

(3) Full shutdown refers to the dual TLV9002S having both channels 1 and 2 disabled (SHDN1 = SHDN2 = V–) and the quad TLV9004S

having all channels 1 to 4 disabled (SHDN12 = SHDN34 = V–). For partial shutdown, only one SHDN pin is exercised; in this mode, the

internal biasing circuitry remains operational and the enable time is shorter.

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7.11 Typical Characteristics

at T_A= 25°C, V+ = 2.75 V, V– = –2.75 V, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and V_OUT= V_S/ 2 (unless otherwise

noted)

40

25

35

20

30

25

15

20

10

15

10

5

0

0.2 0.4 0.6 0.8

1

1.2 1.4 1.6 1.8

2

-

1200 -900 -600 -300

0

300 600 900 1200 1500 1800

D001

D002

Offset Voltage Drift (μV/°C)

Offset Voltage (μV)

V_S= 5 V, T_A= –40°C to 125°C

V_S= 5 V

Figure 2. Offset Voltage Drift Distribution Histogram

Figure 1. Offset Voltage Distribution Histogram

1000

800

2000

1500

1000

500

600

400

200

0

-200

-400

-600

-800

-1000

-500

-1000

-1500

-2000

-40

-20

0

20

40 60

Temperature (°C)

80

100 120 140

-4

-3

-2

-1

0

1

Common-Mode Voltage (V)

2

3

4

D003

D004

Figure 3. Input Offset Voltage vs Temperature

Figure 4. Offset Voltage vs Common-Mode

1000

6

4

I_B-

I_B+

I_OS

800

600

2

400

0

200

-2

-4

-6

-8

-10

0

-200

-400

-600

-800

-1000

-40

-20

0

20

40

60

80

100 120 140

1.5

2

2.5

3

3.5

4

Supply Voltage (V)

4.5

5

5.5

6

Temperature (èC)

D006

D005

Figure 6. I_Band I_OSvs Temperature

Figure 5. Offset Voltage vs Supply Voltage

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Typical Characteristics (continued)

at T_A= 25°C, V+ = 2.75 V, V– = –2.75 V, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and V_OUT= V_S/ 2 (unless otherwise

noted)

160

140

120

100

80

3.5

3

I_B-

I_B+

I_OS

2.5

2

1.5

1

0.5

0

60

-0.5

-1

40

-1.5

-2

20

V_S= 5.5 V

V_S= 1.8 V

-2.5

0

-3

-2

-1

Common-Mode Voltage (V)

0

1

2

3

-40

-20

0

20

40

60

80

100 120 140

Temperature (èC)

D007

D008

Figure 7. I_Band I_OSvs Common-Mode Voltage

Figure 8. Open-Loop Gain vs Temperature

100

120

160

140

120

100

80

60

40

20

0

100

80

60

40

20

0

60

40

20

Gain

Phase

0

-20

-3

-2

-1 0

Output Voltage (V)

1

2

3

1k

10k

100k

Frequency (Hz)

1M

D010

D009

C_L= 10 pF

Figure 10. Open-Loop Gain vs Output Voltage

Figure 9. Open-Loop Gain and Phase vs Frequency

80

70

60

50

40

30

20

10

0

3

2.5

2

Gain = -1

Gain = 1

Gain = 100

Gain = 1000

Gain = 10

1.5

1

125°C

85°C

25°C

-40°C

0.5

0

-0.5

-1

85°C

25°C

-40°C

-1.5

-2

125°C

-10

-20

-2.5

-3

100

1k

10k 100k

Frequency (Hz)

1M

0

5

10

15

20

25

30

Output Current (mA)

35

40

45

50

D011

D012

C_L= 10 pF

Figure 11. Closed-Loop Gain vs Frequency

Figure 12. Output Voltage vs Output Current (Claw)

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Typical Characteristics (continued)

at T_A= 25°C, V+ = 2.75 V, V– = –2.75 V, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and V_OUT= V_S/ 2 (unless otherwise

noted)

120

100

80

60

40

20

0

120

100

80

60

40

20

0

PSRR+

PSRR-

-40

-20

0

20

40

60

80

100 120 140

100

1k

10k

Frequency (Hz)

100k

1M

Temperature (èC)

D014

D013

V_S= 1.8 V to 5.5 V

Figure 14. DC PSRR vs Temperature

Figure 13. PSRR vs Frequency

120

100

80

60

40

20

0

160

140

120

100

80

60

40

20

V_S= 1.8 V

V_S= 5.5 V

0

-40

-20

0

20

40

60

80

100 120 140

100

1k

10k

Frequency (Hz)

100k

1M

Temperature (èC)

D016

D015

V_CM= (V–) – 0.1 V to (V+) – 1.4 V

Figure 16. DC CMRR vs Temperature

Figure 15. CMRR vs Frequency

120

100

80

60

40

20

0

10

100

1k

Frequency (Hz)

10k

100k

Time (1 s/div)

D018

D017

Figure 18. Input Voltage Noise Spectral Density

Figure 17. 0.1-Hz to 10-Hz Integrated Voltage Noise

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Typical Characteristics (continued)

at T_A= 25°C, V+ = 2.75 V, V– = –2.75 V, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and V_OUT= V_S/ 2 (unless otherwise

noted)

-50

-60

0

-20

G = +1, R_L= 2 kW

G = +1, R_L= 10 kW

G = -1, R_L= 2 kW

G = -1, R_L= 10 kW

-70

-40

-80

-60

-90

-80

RL = 2K

RL = 10K

-100

100

1k

Frequency (Hz)

10k

0.001

0.01

0.1

Amplitude (V_RMS)

1

2

D019

D020

V_S= 5.5 V

V_CM= 2.5 V

G = 1

V_S= 5.5 V

G = 1

V_CM= 2.5 V

BW = 80 kHz

ƒ = 1 kHz

BW = 80 kHz

V_OUT= 0.5 V_RMS

Figure 19. THD + N vs Frequency

Figure 20. THD + N vs Amplitude

70

60

50

40

30

20

10

0

70

60

50

40

30

20

10

0

-40

-20

0

20

40

60

80

100 120 140

1.5

2

2.5

3

3.5

4

Voltage Supply (V)

4.5

5

5.5

Temperature (èC)

D022

D021

Figure 22. Quiescent Current vs Temperature

Figure 21. Quiescent Current vs Supply Voltage

50

2000

45

40

35

30

25

20

15

10

5

1800

1600

1400

1200

1000

800

600

400

200

0

Overshoot (+)

Overshoot (–)

0

1k

10k

100k

Frequency (Hz)

1M

10M

0

200

400 600

Capacitance Load (pF)

800

1000

D023

D024

G = 1

V_IN= 100 mVpp

Figure 23. Open-Loop Output Impedance vs Frequency

Figure 24. Small Signal Overshoot vs Capacitive Load

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Typical Characteristics (continued)

at T_A= 25°C, V+ = 2.75 V, V– = –2.75 V, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and V_OUT= V_S/ 2 (unless otherwise

noted)

50

45

40

35

30

25

20

15

10

5

90

80

70

60

50

40

30

20

10

0

Overshoot (+)

Overshoot (–)

0

200

400 600

Capacitance Load (pF)

800

1000

0

200

400 600

Capacitance Load (pF)

800

1000

D025

D026

G = –1

V_IN= 100 mVpp

Figure 25. Small Signal Overshoot vs Capacitive Load

Figure 26. Phase Margin vs Capacitive Load

V_OUT

V_IN

V_OUT

V_IN

Time (100 ms/div)

Time (20 ms/div)

D027

D028

G = 1

V_IN= 6.5 V_PP

G = –10

V_IN= 600 mV_PP

Figure 27. No Phase Reversal

Figure 28. Overload Recovery

V_OUT

V_IN

V_OUT

V_IN

Time (10 ms/div)

D029

D030

G = 1

V_IN= 100 mV_PP

C_L= 10 pF

G = 1

V_IN= 4 V_PP

C_L= 10 pF

Figure 29. Small-Signal Step Response

Figure 30. Large-Signal Step Response

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Typical Characteristics (continued)

at T_A= 25°C, V+ = 2.75 V, V– = –2.75 V, R_L= 10 kΩ connected to V_S/ 2, V_CM= V_S/ 2, and V_OUT= V_S/ 2 (unless otherwise

noted)

Time (1 ms/div)

Time (1 μs/div)

D032

D031

G = 1

C_L= 100 pF

2-V step

G = 1

C_L= 100 pF

2-V step

Figure 32. Large-Signal Settling Time (Positive)

Figure 31. Large-Signal Settling Time (Negative)

80

60

6

5

4

3

2

1

0

V_S= 5.5 V

V_S= 1.8 V

40

20

0

-20

-40

-60

-80

Sinking

Sourcing

1

10

100

1k

10k

Frequency (Hz)

100k

1M

10M 100M

-40

-20

0

20

40

60

80

100

120

Temperature (èC)

D034

D033

Figure 34. Maximum Output Voltage vs Frequency

Figure 33. Short-Circuit Current vs Temperature

140

120

100

80

0

-20

-40

-60

60

-80

40

-100

-120

-140

20

0

10M

100M

Frequency (Hz)

1G

10G

1k

10k

100k

Frequency (Hz)

1M

10M

D035

D036

Figure 35. Electromagnetic Interference Rejection Ratio

Referred to Noninverting Input (EMIRR+) vs Frequency

Figure 36. Channel Separation

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8 Detailed Description

8.1 Overview

The TLV900x is a family of low-power, rail-to-rail input and output op amps. These devices operate from 1.8 V to

5.5 V, are unity-gain stable, and are designed for a wide range of general-purpose applications. The input

common-mode voltage range includes both rails and allows the TLV900x family to be used in virtually any single-

supply application. Rail-to-rail input and output swing significantly increases dynamic range, especially in low-

supply applications, and makes them suitable for driving sampling analog-to-digital converters (ADCs).

8.2 Functional Block Diagram

V+

Reference

Current

V_IN+

V_IN-

V_BIAS1

Class AB

Control

Circuitry

V_O

V_BIAS2

V-

(Ground)

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8.3 Feature Description

8.3.1 Operating Voltage

The TLV900x family of op amps are for operation from 1.8 V to 5.5 V. In addition, many specifications such as

input offset voltage, quiescent current, offset current, and short circuit current apply from –40°C to 125°C.

Parameters that vary significantly with operating voltages or temperature are shown in the Typical Characteristics

section.

8.3.2 Rail-to-Rail Input

The input common-mode voltage range of the TLV900x family extends 100 mV beyond the supply rails for the

full supply voltage range of 1.8 V to 5.5 V. This performance is achieved with a complementary input stage: an

N-channel input differential pair in parallel with a P-channel differential pair, as shown in the Functional Block

Diagram. The N-channel pair is active for input voltages close to the positive rail, typically (V+) – 1.4 V to 100 mV

above the positive supply, whereas the P-channel pair is active for inputs from 100 mV below the negative

supply to approximately (V+) – 1.4 V. There is a small transition region, typically (V+) – 1.2 V to (V+) – 1 V, in

which both pairs are on. This 100-mV transition region can vary up to 100 mV with process variation. Thus, the

transition region (with both stages on) can range from (V+) – 1.4 V to (V+) – 1.2 V on the low end, and up to

(V+) – 1 V to (V+) – 0.8 V on the high end. Within this transition region, PSRR, CMRR, offset voltage, offset drift,

and THD can degrade compared to device operation outside this region.

8.3.3 Rail-to-Rail Output

Designed as a low-power, low-voltage operational amplifier, the TLV900x family delivers a robust output drive

capability. A class-AB output stage with common-source transistors achieves full rail-to-rail output swing

capability. For resistive loads of 10 kΩ, the output swings to within 20 mV of either supply rail, regardless of the

applied power-supply voltage. Different load conditions change the ability of the amplifier to swing close to the

rails.

8.3.4 EMI Rejection

The TLV900x uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI from

sources such as wireless communications and densely-populated boards with a mix of analog signal chain and

digital components. EMI immunity can be improved with circuit design techniques; the TLV900x benefits from

these design improvements. Texas Instruments has developed the ability to accurately measure and quantify the

immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz.

Figure 37 shows the results of this testing on the TLV900x. Table 1 shows the EMIRR IN+ values for the

TLV900x at particular frequencies commonly encountered in real-world applications. The EMI Rejection Ratio of

Operational Amplifiers application report contains detailed information on the topic of EMIRR performance as it

relates to op amps and is available for download from www.ti.com.

140

120

100

80

60

40

20

0

10M

100M

Frequency (Hz)

1G

10G

D035

Figure 37. EMIRR Testing

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Feature Description (continued)

Table 1. TLV900x EMIRR IN+ For Frequencies of Interest

FREQUENCY

APPLICATION OR ALLOCATION

EMIRR IN+

Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency (UHF)

applications

400 MHz

59.5 dB

Global system for mobile communications (GSM) applications, radio communication, navigation,

GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF applications

900 MHz

1.8 GHz

2.4 GHz

3.6 GHz

68.9 dB

77.8 dB

78.0 dB

88.8 dB

GSM applications, mobile personal communications, broadband, satellite, L-band (1 GHz to 2 GHz)

802.11b, 802.11g, 802.11n, Bluetooth^®, mobile personal communications, industrial, scientific and

medical (ISM) radio band, amateur radio and satellite, S-band (2 GHz to 4 GHz)

Radiolocation, aero communication and navigation, satellite, mobile, S-band

8.3.5 Overload Recovery

Overload recovery is defined as the time required for the operational amplifier output to recover from a saturated

state to a linear state. The output devices of the operational amplifier enter a saturation region when the output

voltage exceeds the rated operating voltage, because of the high input voltage or the high gain. After the device

enters the saturation region, the charge carriers in the output devices require time to return to the linear state.

After the charge carriers return to the linear state, the device begins to slew at the specified slew rate. Therefore,

the propagation delay (in case of an overload condition) is the sum of the overload recovery time and the slew

time. The overload recovery time for the TLV900x family is approximately 850 ns.

8.3.6 Shutdown

The TLV9001S, TLV9002S and TLV9004S devices feature SHDN pins that disable the op amp, placing it into a

low-power standby mode. In this mode, the op amp typically consumes less than 1 µA. The SHDN pins are

active low, meaning that shutdown mode is enabled when the input to the SHDN pin is a valid logic low.

The SHDN pins are referenced to the negative supply voltage of the op amp. The threshold of the shutdown

feature lies around 620 mV (typical) and does not change with respect to the supply voltage. Hysteresis has

been included in the switching threshold to ensure smooth switching characteristics. To ensure optimal shutdown

behavior, the SHDN pins should be driven with valid logic signals. A valid logic low is defined as a voltage

between V– and V– + 0.2 V. A valid logic high is defined as a voltage between V– + 1.2 V and V+. The shutdown

pin circuitry includes a pull-up resistor, which will inherently pull the voltage of the pin to the positive supply rail if

not driven. Thus, to enable the amplifier, the SHDN pins should either be left floating or driven to a valid logic

high. To disable the amplifier, the SHDN pins must be driven to a valid logic low. While we highly recommend

that the shutdown pin be connected to a valid high or a low voltage or driven, we have included a pull-up resistor

connected to VCC. The maximum voltage allowed at the SHDN pins is (V+) + 0.5 V. Exceeding this voltage level

will damage the device.

The SHDN pins are high-impedance CMOS inputs. Dual op amp versions are independently controlled and quad

op amp versions are controlled in pairs with logic inputs. For battery-operated applications, this feature may be

used to greatly reduce the average current and extend battery life. The enable time is 70 µs for full shutdown of

all channels; disable time is 4 µs. When disabled, the output assumes a high-impedance state. This architecture

allows the TLV9002S and TLV9004S to operate as a gated amplifier (or to have the device output multiplexed

onto a common analog output bus). Shutdown time (t_OFF) depends on loading conditions and increases as load

resistance increases. To ensure shutdown (disable) within a specific shutdown time, the specified 10-kΩ load to

midsupply (V_S/ 2) is required. If using the TLV9001S, TLV9002S or TLV9004S without a load, the resulting

turnoff time significantly increases.

8.4 Device Functional Modes

The TLV900x family has a single functional mode. The devices are powered on as long as the power-supply

voltage is between 1.8 V (±0.9 V) and 5.5 V (±2.75 V).

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9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

9.1 Application Information

The TLV900x family of low-power, rail-to-rail input and output operational amplifiers is specifically designed for

portable applications. The devices operate from 1.8 V to 5.5 V, are unity-gain stable, and are suitable for a wide

range of general-purpose applications. The class AB output stage is capable of driving less than or equal to

10‑kΩ loads connected to any point between V+ and V–. The input common-mode voltage range includes both

rails, and allows the TLV900x devices to be used in any single-supply application.

9.2 Typical Application

9.2.1 TLV900x Low-Side, Current Sensing Application

Figure 38 shows the TLV900x configured in a low-side current sensing application.

V_BUS

I_LOAD

Z_LOAD

5 V

+

TLV9002

V_OUT

Þ

+

R_SHUNT

V_SHUNT

R_F

0.1 Ω

57.6 kΩ

Þ

R_G

1.2 kΩ

Figure 38. TLV900x in a Low-Side, Current-Sensing Application

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Typical Application (continued)

9.2.1.1 Design Requirements

The design requirements for this design are:

•

Load current: 0 A to 1 A

Output voltage: 4.9 V

Maximum shunt voltage: 100 mV

9.2.1.2 Detailed Design Procedure

The transfer function of the circuit in Figure 38 is given in Equation 1.

V_OUT= I_LOADìR_SHUNTìGain

(1)

The load current (I_LOAD) produces a voltage drop across the shunt resistor (R_SHUNT). The load current is set from

0 A to 1 A. To keep the shunt voltage below 100 mV at maximum load current, the largest shunt resistor is

shown using Equation 2.

V_{SHUNT _MAX}

100mV

1A

R_SHUNT

=

=100mW

I_{LOAD_MAX}

(2)

Using Equation 2, R_SHUNTis calculated to be 100 mΩ. The voltage drop produced by I_LOADand R_SHUNTis

amplified by the TLV900x to produce an output voltage of approximately 0 V to 4.9 V. The gain needed by the

TLV900x to produce the necessary output voltage is calculated using Equation 3.

V

_{OUT _MAX}- V_{OUT _MIN}

(

)

Gain =

V_{IN_MAX}- V

(

)

IN_MIN

(3)

Using Equation 3, the required gain is calculated to be 49 V/V, which is set with resistors R_Fand R_G. Equation 4

sizes the resistors R_Fand R_G, to set the gain of the TLV900x to 49 V/V.

R

(

)

F

Gain = 1+

R

G

(4)

Selecting R_Fas 57.6 kΩ and R_Gas 1.2 kΩ provides a combination that equals 49 V/V. Figure 39 shows the

measured transfer function of the circuit shown in Figure 38. Notice that the gain is only a function of the

feedback and gain resistors. This gain is adjusted by varying the ratio of the resistors and the actual resistors

values are determined by the impedance levels that the designer wants to establish. The impedance level

determines the current drain, the effect that stray capacitance has, and a few other behaviors. There is no

optimal impedance selection that works for every system, you must choose an impedance that is ideal for your

system parameters.

9.2.1.3 Application Curve

5

4

3

2

1

0

0.2

0.4

0.6

0.8

1

I_LOAD(A)

C219

Figure 39. Low-Side, Current-Sense Transfer Function

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Typical Application (continued)

9.2.2 Single-Supply Photodiode Amplifier

Photodiodes are used in many applications to convert light signals to electrical signals. The current through the

photodiode is proportional to the photon energy absorbed, and is commonly in the range of a few hundred

picoamps to a few tens of microamps. An amplifier in a transimpedance configuration is typically used to convert

the low-level photodiode current to a voltage signal for processing in an MCU. The circuit shown in Figure 40 is

an example of a single-supply photodiode amplifier circuit using the TLV9002.

+3.3V

R₁

11.5 kΩ

10 pF

C_F

V_REF

R₂

357 Ω

R_F

309 kΩ

3.3 V

œ

TLV9002

V_OUT

+

V_REF

C_PD

I_IN

0-10 µA

R_L

10 kꢀ

47 pF

Figure 40. Single-Supply Photodiode Amplifier Circuit

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Typical Application (continued)

9.2.2.1 Design Requirements

The design requirements for this design are:

•

Supply voltage: 3.3 V

Input: 0 µA to 10 µA

Output: 0.1 V to 3.2 V

Bandwidth: 50 kHz

9.2.2.2 Detailed Design Procedure

The transfer function between the output voltage (V_OUT), the input current, (I_IN) and the reference voltage (V_REF

)

is defined in Equation 5.

V_OUT= I_INìR_F+ V_REF

(5)

Where:

≈

∆

«

’

÷

R₁ìR₂

R₁+ R_{2 ◊}

V_REF= V ì

+

(6)

Set V_REFto 100 mV to meet the minimum output voltage level by setting R1 and R2 to meet the required ratio

calculated in Equation 7.

V_REF

0.1 V

=

= 0.0303

V₊

3.3 V

(7)

The closest resistor ratio to meet this ratio sets R1 to 11.5 kΩ and R2 to 357 Ω.

The required feedback resistance can be calculated based on the input current and desired output voltage.

V_OUT- V_REF

3.2 V - 0.1 V

10 mA

kV

R_F=

=

= 310

ö 309 kW

I

A

IN

(8)

Calculate the value for the feedback capacitor based on R_Fand the desired –3-dB bandwidth, (f_–3dB) using

Equation 9.

1

C_F=

=

= 10.3 pF ö 10 pF

2ì pìR_Fì f_-3dB2ì pì309 kWì50 kHz

(9)

The minimum op amp bandwidth required for this application is based on the value of R_F, C_F, and the

capacitance on the INx– pin of the TLV9002 which is equal to the sum of the photodiode shunt capacitance,

(CPD) the common-mode input capacitance, (CCM) and the differential input capacitance (CD) as Equation 10

shows.

C

= C_PD+ C_CM+ C_D= 47 pF+ 5 pF +1pF = 53 pF

IN

(10)

The minimum op amp bandwidth is calculated in Equation 11.

C_IN+ C_F

f_=BGW

í

í 324 kHz

2

2ì pìR_Fì C_F

(11)

The 1-MHz bandwidth of the TLV900x meets the minimum bandwidth requirement and remains stable in this

application configuration.

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Typical Application (continued)

9.2.2.3 Application Curves

The measured current-to-voltage transfer function for the photodiode amplifier circuit is shown in Figure 41. The

measured performance of the photodiode amplifier circuit is shown in Figure 42.

3

2.5

2

120

100

80

1.5

1

60

0.5

0

40

10

100

1k 10k

Frequency (Hz)

100k

1M

0

2E-6

4E-6 6E-6

Input Current (A)

8E-6

1E-5

D001

D002

Figure 41. Photodiode Amplifier Circuit AC Gain Results

Figure 42. Photodiode Amplifier Circuit DC Results

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10 Power Supply Recommendations

The TLV900x family is specified for operation from 1.8 V to 5.5 V (±0.9 V to ±2.75 V); many specifications apply

from –40°C to 125°C. The Typical Characteristics section presents parameters that may exhibit significant

variance with regard to operating voltage or temperature.

CAUTION

Supply voltages larger than 6 V may permanently damage the device; see the

Absolute Maximum Ratings table.

Place 0.1-µF bypass capacitors close to the power-supply pins to reduce coupling errors from noisy or high-

impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout

Guidelines section.

10.1 Input and ESD Protection

The TLV900x family incorporates internal ESD protection circuits on all pins. For input and output pins, this

protection primarily consists of current-steering diodes connected between the input and power-supply pins.

These ESD protection diodes provide in-circuit, input overdrive protection, as long as the current is limited to

10 mA. Figure 43 shows how a series input resistor can be added to the driven input to limit the input current.

The added resistor contributes thermal noise at the amplifier input and the value must be kept to a minimum in

noise-sensitive applications.

V+

I_OVERLOAD

10-mA maximum

V_OUT

Device

V_IN

5 kW

Figure 43. Input Current Protection

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11 Layout

11.1 Layout Guidelines

For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:

•

Noise can propagate into analog circuitry through the power connections of the board and propagate to

the power pins of the op amp itself. Bypass capacitors are used to reduce the coupled noise by providing

a low-impedance path to ground.

–

Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as

close to the device as possible. A single bypass capacitor from V+ to ground is adequate for single-

supply applications.

•

Separate grounding for analog and digital portions of circuitry is one of the simplest and most effective

methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground

planes. A ground plane helps distribute heat and reduces electromagnetic interference (EMI) noise

pickup. Take care to physically separate digital and analog grounds, paying attention to the flow of the

ground current.

To reduce parasitic coupling, run the input traces as far away from the supply or output traces as

possible. If these traces cannot be kept separate, crossing the sensitive trace at a 90 degree angle is

much better as opposed to running the traces in parallel with the noisy trace.

•

Place the external components as close to the device as possible, as shown in Figure 45. Keeping R_F

and R_Gclose to the inverting input minimizes parasitic capacitance.

Keep the length of input traces as short as possible. Remember that the input traces are the most

sensitive part of the circuit.

Consider a driven, low-impedance guard ring around the critical traces. A guard ring may significantly

reduce leakage currents from nearby traces that are at different potentials.

•

Cleaning the PCB following board assembly is recommended for best performance.

Any precision integrated circuit can experience performance shifts resulting from moisture ingress into the

plastic package. Following any aqueous PCB cleaning process, baking the PCB assembly is

recommended to remove moisture introduced into the device packaging during the cleaning process. A

low-temperature, post-cleaning bake at 85°C for 30 minutes is sufficient for most circumstances.

11.2 Layout Example

VIN 1

VIN 2

+

VOUT 1

VOUT 2

R_G

R_F

Figure 44. Schematic Representation for Figure 45

Place components

close to device and to

each other to reduce

parasitic errors.

OUT 1

Use low-ESR,

ceramic bypass

capacitor . Place as

close to the device

as possible .

V_S+

GND

OUT1

V+

R_F

R_G

OUT 2

GND

IN1œ

IN1+

Vœ

OUT2

IN2œ

IN2+

R_F

VIN 1

GND

R_G

VIN 2

Keep input traces short

and run the input traces

as far away from

the supply lines

Use low-ESR,

GND

ceramic bypass

capacitor . Place as

close to the device

as possible .

V_Sœ

Ground (GND) plane on another layer

as possible .

Figure 45. Layout Example

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12 Device and Documentation Support

12.1 Documentation Support

12.1.1 Related Documentation

For related documentation, see the following:

•

Texas Instruments, EMI Rejection Ratio of Operational Amplifiers

12.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community

resources, tools and software, and quick access to order now.

Table 2. Related Links

TECHNICAL

DOCUMENTS

TOOLS &

SOFTWARE

SUPPORT &

COMMUNITY

PARTS

PRODUCT FOLDER

ORDER NOW

TLV9001

TLV9002

TLV9004

Click here

12.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

12.4 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

12.5 Trademarks

E2E is a trademark of Texas Instruments.

Bluetooth is a registered trademark of Bluetooth SIG, Inc.

All other trademarks are the property of their respective owners.

12.6 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.7 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most-

current data available for the designated devices. This data is subject to change without notice and without

revision of this document. For browser-based versions of this data sheet, see the left-hand navigation pane.

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PACKAGE MATERIALS INFORMATION

www.ti.com

30-Dec-2020

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TLV9001IDBVR

TLV9001IDCKR

TLV9001IDPWR

TLV9001SIDBVR

TLV9001SIDCKR

TLV9001TIDCKR

TLV9001UIDBVR

TLV9002IDDFR

SOT-23

SC70

DBV

DCK

DPW

DBV

DCK

DBV

DDF

5

6

5

8

3000

180.0

178.0

180.0

178.0

180.0

8.4

9.0

8.4

9.0

8.4

3.2

2.4

0.91

3.2

2.4

3.2

2.5

0.91

3.2

2.5

3.2

1.4

1.2

0.5

1.4

1.2

1.4

4.0

2.0

4.0

8.0

Q3

Q2

Q3

X2SON

SOT-23

SC70

SOT-23

SOT-

23-THIN

TLV9002IDGKR

TLV9002IDGKT

TLV9002IDR

VSSOP

SOIC

DGK

D

8

2500

250

330.0

180.0

330.0

178.0

330.0

12.4

15.4

8.4

5.3

6.4

2.3

7.0

5.3

1.75

6.4

3.4

5.2

2.3

3.6

3.4

2.25

5.2

1.4

8.0

4.0

8.0

4.0

8.0

12.0

8.0

Q1

Q2

Q1

8

2500

3000

250

2.1

TLV9002IDSGR

TLV9002IDSGT

TLV9002IPWR

TLV9002SIDGSR

TLV9002SIRUGR

TLV9004IDR

WSON

TSSOP

VSSOP

X2QFN

SOIC

DSG

PW

8

1.15

1.6

8

8.4

8.0

8

2000

2500

3000

2500

12.4

8.4

12.0

8.0

DGS

RUG

D

10

14

1.4

0.56

2.1

15.4

12.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

30-Dec-2020

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TLV9004IDR

TLV9004IPWR

TLV9004IRTER

TLV9004IRUCR

TLV9004SIRTER

SOIC

TSSOP

WQFN

QFN

D

14

16

14

16

2500

2000

3000

330.0

180.0

330.0

16.4

12.4

9.5

6.5

6.9

9.0

5.6

2.1

1.6

1.1

0.5

1.1

8.0

4.0

8.0

16.0

12.0

8.0

Q1

Q2

PW

RTE

RUC

RTE

3.3

2.16

3.3

2.16

3.3

WQFN

12.4

12.0

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TLV9001IDBVR

TLV9001IDCKR

TLV9001IDPWR

TLV9001SIDBVR

TLV9001SIDCKR

TLV9001TIDCKR

TLV9001UIDBVR

TLV9002IDDFR

TLV9002IDGKR

TLV9002IDGKT

TLV9002IDR

SOT-23

SC70

DBV

DCK

DPW

DBV

DCK

DBV

DDF

DGK

D

5

6

5

8

3000

2500

250

210.0

190.0

205.0

210.0

180.0

190.0

210.0

366.0

336.6

210.0

185.0

190.0

200.0

185.0

180.0

190.0

185.0

364.0

336.6

185.0

35.0

30.0

33.0

35.0

18.0

30.0

35.0

50.0

41.3

35.0

X2SON

SOT-23

SC70

SOT-23

SOT-23-THIN

VSSOP

SOIC

2500

3000

TLV9002IDSGR

WSON

DSG

Pack Materials-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

30-Dec-2020

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TLV9002IDSGT

TLV9002IPWR

TLV9002SIDGSR

TLV9002SIRUGR

TLV9004IDR

WSON

TSSOP

VSSOP

X2QFN

SOIC

DSG

PW

DGS

RUG

D

8

250

210.0

366.0

205.0

336.6

853.0

366.0

367.0

205.0

367.0

185.0

364.0

200.0

336.6

449.0

364.0

367.0

200.0

367.0

35.0

50.0

33.0

41.3

35.0

50.0

35.0

30.0

35.0

8

2000

2500

3000

2500

2000

3000

10

14

16

14

16

TLV9004IDR

SOIC

D

TLV9004IPWR

TLV9004IRTER

TLV9004IRUCR

TLV9004SIRTER

TSSOP

WQFN

QFN

PW

RTE

RUC

RTE

WQFN

Pack Materials-Page 3

PACKAGE OUTLINE

DBV0005A

SOT-23 - 1.45 mm max height

S

C

A

L

E

4

.

0

SMALL OUTLINE TRANSISTOR

C

3.0

2.6

0.1 C

1.75

1.45

0.90

B

A

PIN 1

INDEX AREA

1

2

5

2X 0.95

1.9

3.05

2.75

1.9

4

3

0.5

5X

0.3

0.15

0.00

(1.1)

TYP

0.2

C A B

0.25

GAGE PLANE

0.22

0.08

TYP

8

0

TYP

0.6

0.3

TYP

SEATING PLANE

4214839/E 09/2019

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

www.ti.com

EXAMPLE BOARD LAYOUT

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

1

5

5X (0.6)

SYMM

(1.9)

2

3

2X (0.95)

4

(R0.05) TYP

(2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED METAL

0.07 MIN

ARROUND

0.07 MAX

ARROUND

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4214839/E 09/2019

NOTES: (continued)

5. Publication IPC-7351 may have alternate designs.

6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DBV0005A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

5X (1.1)

1

5

5X (0.6)

SYMM

(1.9)

2

3

2X(0.95)

4

(R0.05) TYP

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4214839/E 09/2019

NOTES: (continued)

7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

8. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE

DBV0006A

SOT-23 - 1.45 mm max height

S

C

A

L

E

4

.

0

SMALL OUTLINE TRANSISTOR

C

3.0

2.6

0.1 C

1.75

1.45

B

1.45 MAX

A

PIN 1

INDEX AREA

1

2

6

5

2X 0.95

1.9

3.05

2.75

4

3

0.50

6X

0.25

C A B

0.15

0.00

0.2

(1.1)

TYP

0.25

GAGE PLANE

0.22

0.08

TYP

8

TYP

0

0.6

0.3

TYP

SEATING PLANE

4214840/B 03/2018

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.15 per side.

4. Leads 1,2,3 may be wider than leads 4,5,6 for package orientation.

5. Refernce JEDEC MO-178.

www.ti.com

EXAMPLE BOARD LAYOUT

DBV0006A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

6X (1.1)

1

6X (0.6)

6

SYMM

5

2

3

2X (0.95)

4

(R0.05) TYP

(2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED METAL

0.07 MIN

ARROUND

0.07 MAX

ARROUND

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4214840/B 03/2018

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DBV0006A

SOT-23 - 1.45 mm max height

SMALL OUTLINE TRANSISTOR

PKG

6X (1.1)

1

6X (0.6)

6

SYMM

5

2

3

2X(0.95)

4

(R0.05) TYP

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4214840/B 03/2018

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE

DGS0010A

VSSOP - 1.1 mm max height

S

C

A

L

E

3

.

2

0

SMALL OUTLINE PACKAGE

C

SEATING PLANE

0.1 C

5.05

4.75

TYP

PIN 1 ID

AREA

A

8X 0.5

10

1

3.1

2.9

NOTE 3

2X

2

5

6

0.27

0.17

10X

3.1

2.9

1.1 MAX

0.1

C A

B

NOTE 4

0.23

0.13

TYP

SEE DETAIL A

0.25

GAGE PLANE

0.15

0.05

0.7

0.4

0 - 8

DETAIL A

TYPICAL

4221984/A 05/2015

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.

5. Reference JEDEC registration MO-187, variation BA.

www.ti.com

EXAMPLE BOARD LAYOUT

DGS0010A

VSSOP - 1.1 mm max height

SMALL OUTLINE PACKAGE

10X (1.45)

(R0.05)

TYP

SYMM

10X (0.3)

1

5

10

SYMM

6

8X (0.5)

(4.4)

LAND PATTERN EXAMPLE

SCALE:10X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

0.05 MAX

ALL AROUND

0.05 MIN

ALL AROUND

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

4221984/A 05/2015

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DGS0010A

VSSOP - 1.1 mm max height

SMALL OUTLINE PACKAGE

10X (1.45)

SYMM

(R0.05) TYP

10X (0.3)

8X (0.5)

1

5

10

SYMM

6

(4.4)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:10X

4221984/A 05/2015

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

GENERIC PACKAGE VIEW

DSG 8

2 x 2, 0.5 mm pitch

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

This image is a representation of the package family, actual package may vary.

Refer to the product data sheet for package details.

4224783/A

www.ti.com

PACKAGE OUTLINE

DSG0008A

WSON - 0.8 mm max height

SCALE 5.500

PLASTIC SMALL OUTLINE - NO LEAD

2.1

1.9

B

A

PIN 1 INDEX AREA

2.1

1.9

0.32

0.18

0.4

0.2

ALTERNATIVE TERMINAL SHAPE

TYPICAL

C

0.8 MAX

SEATING PLANE

0.08 C

0.05

0.00

EXPOSED

THERMAL PAD

(0.2) TYP

0.9 0.1

5

4

6X 0.5

2X

1.5

9

1.6 0.1

8

1

0.32

0.18

8X

0.4

0.2

PIN 1 ID

8X

0.1

C A B

C

0.05

4218900/D 04/2020

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

www.ti.com

EXAMPLE BOARD LAYOUT

DSG0008A

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

(0.9)

(

0.2) VIA

8X (0.5)

TYP

1

8

8X (0.25)

(0.55)

SYMM

9

(1.6)

6X (0.5)

5

4

SYMM

(1.9)

(R0.05) TYP

LAND PATTERN EXAMPLE

SCALE:20X

0.07 MIN

ALL AROUND

0.07 MAX

ALL AROUND

SOLDER MASK

OPENING

METAL

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

NON SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4218900/D 04/2020

NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature

number SLUA271 (www.ti.com/lit/slua271).

5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown

on this view. It is recommended that vias under paste be filled, plugged or tented.

www.ti.com

EXAMPLE STENCIL DESIGN

DSG0008A

WSON - 0.8 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

8X (0.5)

METAL

8

SYMM

1

8X (0.25)

(0.45)

SYMM

9

(0.7)

6X (0.5)

5

4

(R0.05) TYP

(0.9)

(1.9)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

EXPOSED PAD 9:

87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE

SCALE:25X

4218900/D 04/2020

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

www.ti.com

PACKAGE OUTLINE

PW0008A

TSSOP - 1.2 mm max height

S

C

A

L

E

2

.

8

0

SMALL OUTLINE PACKAGE

C

6.6

6.2

SEATING PLANE

TYP

PIN 1 ID

AREA

A

0.1 C

6X 0.65

8

5

1

3.1

2.9

NOTE 3

2X

1.95

4

0.30

0.19

8X

4.5

4.3

1.2 MAX

B

0.1

C A

B

NOTE 4

(0.15) TYP

SEE DETAIL A

0.25

GAGE PLANE

0.15

0.05

0.75

0.50

0 - 8

DETAIL A

TYPICAL

4221848/A 02/2015

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.

5. Reference JEDEC registration MO-153, variation AA.

www.ti.com

EXAMPLE BOARD LAYOUT

PW0008A

TSSOP - 1.2 mm max height

SMALL OUTLINE PACKAGE

8X (1.5)

SYMM

8X (0.45)

(R0.05)

1

4

TYP

8

SYMM

6X (0.65)

5

(5.8)

LAND PATTERN EXAMPLE

SCALE:10X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

0.05 MAX

ALL AROUND

0.05 MIN

ALL AROUND

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

NOT TO SCALE

4221848/A 02/2015

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

PW0008A

TSSOP - 1.2 mm max height

SMALL OUTLINE PACKAGE

8X (1.5)

SYMM

(R0.05) TYP

8X (0.45)

1

4

8

SYMM

6X (0.65)

5

(5.8)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:10X

4221848/A 02/2015

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE

DDF0008A

SOT-23 - 1.1 mm max height

S

C

A

L

E

4

.

0

PLASTIC SMALL OUTLINE

C

2.95

2.65

SEATING PLANE

TYP

PIN 1 ID

AREA

0.1 C

A

6X 0.65

8

1

2.95

2.85

NOTE 3

2X

1.95

4

5

0.4

0.2

8X

0.1

C A

B

1.65

1.55

B

1.1 MAX

0.20

0.08

TYP

SEE DETAIL A

0.25

GAGE PLANE

0.1

0.0

0 - 8

0.6

0.3

DETAIL A

TYPICAL

4222047/B 11/2015

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

www.ti.com

EXAMPLE BOARD LAYOUT

DDF0008A

SOT-23 - 1.1 mm max height

PLASTIC SMALL OUTLINE

8X (1.05)

SYMM

1

8

8X (0.45)

SYMM

6X (0.65)

5

4

(R0.05)

TYP

(2.6)

LAND PATTERN EXAMPLE

SCALE:15X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

4222047/B 11/2015

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

DDF0008A

SOT-23 - 1.1 mm max height

PLASTIC SMALL OUTLINE

8X (1.05)

SYMM

(R0.05) TYP

8

1

8X (0.45)

SYMM

6X (0.65)

5

4

(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

4222047/B 11/2015

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

7. Board assembly site may have different recommendations for stencil design.

www.ti.com

PACKAGE OUTLINE

X2QFN - 0.4 mm max height

PLASTIC QUAD FLAT PACK- NO LEAD

RUC0014A

A

2.1

1.9

B

2.1

1.9

PIN 1 INDEX AREA

0.4 MAX

C

SEATING PLANE

0.08 C

0.05

0.00

(0.15) TYP

2X 0.4

6

7

8X 0.4

5

8

SYMM

1.6

12

1

0.25

0.15

14

13

14X

0.5

PIN 1 ID

SYMM

(45^oX0.1)

0.1

C A B

C

14X

0.3

0.05

4220584/A 05/2019

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

www.ti.com

EXAMPLE BOARD LAYOUT

X2QFN - 0.4 mm max height

PLASTIC QUAD FLAT PACK- NO LEAD

RUC0014A

SYMM

14X (0.6)

14X (0.2)

8X (0.4)

SYMM

(1.6) (1.8)

(R0.05)

2X (0.4)

(1.8)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE: 23X

0.05 MAX

ALL AROUND

0.05 MIN

ALL AROUND

SOLDER MASK

OPENING

METAL

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

EXPOSED METAL

NON-SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

4220584/A 05/2019

NOTES: (continued)

3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).

www.ti.com

EXAMPLE STENCIL DESIGN

X2QFN - 0.4 mm max height

RUC0014A

PLASTIC QUAD FLAT PACK- NO LEAD

SYMM

14X (0.6)

14X (0.2)

8X (0.4)

SYMM

(1.6) (1.8)

(R0.05)

2X (0.4)

(1.8)

SOLDER PASTE EXAMPLE

BASED ON 0.100mm THICK STENCIL

SCALE: 23X

4220584/A 05/2019

NOTES: (continued)

4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

www.ti.com

PACKAGE OUTLINE

DPW0005A

X2SON - 0.4 mm max height

S

C

A

L

E

1

2

.

0

PLASTIC SMALL OUTLINE - NO LEAD

0.85

0.75

A

B

PIN 1 INDEX AREA

0.85

0.75

0.4 MAX

C

SEATING PLANE

NOTE 3

(0.1)

0.05

0.00

(0.25)

4X (0.05)

0.25 0.1

2

1

4

5

NOTE 3

2X

0.48

3

2X (0.26)

0.27

0.17

4X

0.27

0.17

0.1 C A B

0.05 C

(0.06)

3X

0.32

0.23

4223102/B 09/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. The size and shape of this feature may vary.

www.ti.com

EXAMPLE BOARD LAYOUT

DPW0005A

X2SON - 0.4 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

(0.78)

(

0.1)

SYMM

4X (0.42)

VIA

0.05 MIN

ALL AROUND

TYP

1

5

4X (0.22)

SYMM

4X (0.26)

(0.48)

3

2

4

(R0.05) TYP

SOLDER MASK

OPENING, TYP

4X (0.06)

(

0.25)

(0.21) TYP

EXPOSED METAL

CLEARANCE

METAL UNDER

SOLDER MASK

TYP

LAND PATTERN EXAMPLE

SOLDER MASK DEFINED

SCALE:60X

4223102/B 09/2017

NOTES: (continued)

4. This package is designed to be soldered to a thermal pad on the board. For more information, refer to QFN/SON PCB application note

in literature No. SLUA271 (www.ti.com/lit/slua271).

www.ti.com

EXAMPLE STENCIL DESIGN

DPW0005A

X2SON - 0.4 mm max height

PLASTIC SMALL OUTLINE - NO LEAD

4X (0.42)

4X (0.06)

5

1

4X (0.22)

SYMM

(

0.24)

4X (0.26)

(0.21)

(0.48)

TYP

SOLDER MASK

EDGE

3

2

4

(R0.05) TYP

SYMM

(0.78)

SOLDER PASTE EXAMPLE

BASED ON 0.1 mm THICK STENCIL

EXPOSED PAD

92% PRINTED SOLDER COVERAGE BY AREA

SCALE:100X

4223102/B 09/2017

NOTES: (continued)

5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

www.ti.com

PACKAGE OUTLINE

D0008A

SOIC - 1.75 mm max height

SCALE 2.800

SMALL OUTLINE INTEGRATED CIRCUIT

C

SEATING PLANE

.228-.244 TYP

[5.80-6.19]

.004 [0.1] C

A

PIN 1 ID AREA

6X .050

[1.27]

8

1

2X

.189-.197

[4.81-5.00]

NOTE 3

.150

[3.81]

4X (0 -15 )

4

5

8X .012-.020

[0.31-0.51]

B

.150-.157

[3.81-3.98]

NOTE 4

.069 MAX

[1.75]

.010 [0.25]

C A B

.005-.010 TYP

[0.13-0.25]

4X (0 -15 )

SEE DETAIL A

.010

[0.25]

.004-.010

[0.11-0.25]

0 - 8

.016-.050

[0.41-1.27]

DETAIL A

TYPICAL

(.041)

[1.04]

4214825/C 02/2019

NOTES:

1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.

Dimensioning and tolerancing per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed .006 [0.15] per side.

4. This dimension does not include interlead flash.

5. Reference JEDEC registration MS-012, variation AA.

www.ti.com

EXAMPLE BOARD LAYOUT

D0008A

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )

[1.55]

SYMM

SEE

DETAILS

1

8

8X (.024)

[0.6]

SYMM

(R.002 ) TYP

[0.05]

5

4

6X (.050 )

[1.27]

(.213)

[5.4]

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:8X

SOLDER MASK

OPENING

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

METAL

EXPOSED

METAL

EXPOSED

METAL

.0028 MAX

[0.07]

.0028 MIN

[0.07]

ALL AROUND

SOLDER MASK

DEFINED

NON SOLDER MASK

DEFINED

SOLDER MASK DETAILS

4214825/C 02/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com

EXAMPLE STENCIL DESIGN

D0008A

SOIC - 1.75 mm max height

SMALL OUTLINE INTEGRATED CIRCUIT

8X (.061 )

[1.55]

SYMM

1

8

8X (.024)

[0.6]

SYMM

(R.002 ) TYP

[0.05]

5

4

6X (.050 )

[1.27]

(.213)

[5.4]

SOLDER PASTE EXAMPLE

BASED ON .005 INCH [0.125 MM] THICK STENCIL

SCALE:8X

4214825/C 02/2019

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

9. Board assembly site may have different recommendations for stencil design.

www.ti.com

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TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE

DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”

AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY

IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD

PARTY INTELLECTUAL PROPERTY RIGHTS.

These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate

TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable

standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you

permission to use these resources only for development of an application that uses the TI products described in the resource. Other

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applicable warranties or warranty disclaimers for TI products.IMPORTANT NOTICE

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265


型号：	TLV9001IDBVR
厂家：	TEXAS INSTRUMENTS
描述：	单通道、1MHz、轨到轨输入和输出 1.8V 至 5.5V 运算放大器 \| DBV \| 5 \| -40 to 125 放大器运算放大器
文件：	总86页 (文件大小：5462K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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