TLVH431BMDBZREP [TI]

精度为 0.5% 的塑料增强型、低电压、宽工作电流、可调节精密并联稳压器 | DBZ | 3 | -55 to 125;
TLVH431BMDBZREP
型号: TLVH431BMDBZREP
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

精度为 0.5% 的塑料增强型、低电压、宽工作电流、可调节精密并联稳压器 | DBZ | 3 | -55 to 125

光电二极管 稳压器
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TLVH431B-EP  
SLVSFF4 DECEMBER 2019  
TLVH431B-EP Enhanced Plastic 0.5% Low-Voltage Wide-Operating Current  
Adjustable Precision Shunt Regulator  
1 Features  
3 Description  
The TLVH431B-EP device is  
a low-voltage, 3-  
1
Low-voltage operation: down to 1.24 V  
Reference voltage tolerances 0.5% at 25°C  
Adjustable output voltage, VO = VREF to 18 V  
terminal, adjustable voltage reference with specified  
thermal stability over applicable industrial and  
commercial temperature ranges. Output voltage can  
be set to any value between VREF (1.24 V) and 18 V  
with two external resistors (see Figure 24). This  
device operates from a lower voltage (1.24 V) than  
the widely used TL431 and TL1431 shunt-regulator  
references.  
Wide operating cathode current range:  
200 μA to 70 mA  
0.25-typical output impedance  
Supports defense and aerospace applications:  
Controlled baseline  
When used with an optocoupler, the TLVH431B-EP  
device is ideal for voltage references in isolated  
feedback circuits designed for 3-V to 3.3-V switching-  
Available in extended (–55°C to 125°C)  
temperature range  
mode power supplies. It has  
a typical output  
Extended product life cycle  
Extended product-change notification  
Product traceability  
impedance of 0.25 . Active output circuitry provides  
a very sharp turn-on characteristic, making the  
TLVH431B-EP device an excellent replacement for  
low-voltage Zener diodes in many applications,  
including on-board regulation and adjustable power  
supplies.  
2 Applications  
Adjustable voltage and current referencing  
Secondary side regulation in flyback SMPSs  
Zener replacement  
Device Information(1)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
TLVH431BMDBZREP SOT-23 (3)  
2.92 mm × 1.30 mm  
Voltage monitoring  
Comparator with integrated reference  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
Simplified Schematic  
Input  
V
O
I
K
V
REF  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
TLVH431B-EP  
SLVSFF4 DECEMBER 2019  
www.ti.com  
Table of Contents  
8.4 Device Functional Modes........................................ 14  
Applications and Implementation ...................... 15  
9.1 Application Information............................................ 15  
9.2 Typical Applications ................................................ 16  
1
2
3
4
5
6
Features.................................................................. 1  
9
Applications ........................................................... 1  
Description ............................................................. 1  
Revision History..................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings.............................................................. 4  
6.3 Recommended Operating Conditions....................... 4  
6.4 Thermal Information.................................................. 4  
6.5 Electrical Characteristics........................................... 5  
6.6 Typical Characteristics.............................................. 6  
Parameter Measurement Information ................ 11  
Detailed Description ............................................ 12  
8.1 Overview ................................................................. 12  
8.2 Functional Block Diagram ....................................... 12  
8.3 Feature Description................................................. 13  
10 Power Supply Recommendations ..................... 20  
11 Layout................................................................... 20  
11.1 Layout Guidelines ................................................. 20  
11.2 Layout Example .................................................... 20  
12 Device and Documentation Support ................. 21  
12.1 Documentation Support ........................................ 21  
12.2 Receiving Notification of Documentation Updates 21  
12.3 Support Resources ............................................... 21  
12.4 Trademarks........................................................... 21  
12.5 Electrostatic Discharge Caution............................ 21  
12.6 Glossary................................................................ 21  
7
8
13 Mechanical, Packaging, and Orderable  
Information ........................................................... 21  
4 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
DATE  
REVISION  
NOTES  
December 2019  
*
Initial release.  
2
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5 Pin Configuration and Functions  
TLVH431B-EP DBZ Package  
3-Pin SOT-23  
Top View  
REF  
1
2
3
ANODE  
CATHODE  
Not to scale  
Pin Functions  
PIN  
TYPE  
DESCRIPTION  
NAME  
NO.  
2
CATHODE  
REF  
I/O  
I
Shunt current/voltage input  
1
Threshold relative to common anode  
ANODE  
3
O
Common pin, normally connected to ground  
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6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
20  
UNIT  
V
VKA  
IK  
Cathode voltage(2)  
Cathode current  
–25  
80  
mA  
mA  
°C  
Iref  
TJ  
Reference current  
–0.05  
3
Operating virtual junction temperature  
Storage temperature  
150  
150  
Tstg  
–65  
°C  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Voltage values are with respect to the anode terminal, unless otherwise noted.  
6.2 ESD Ratings  
VALUE UNIT  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Charged device model (CDM), per JEDEC specification JESD22-C101(2)  
±2000  
±1000  
V(ESD)  
Electrostatic discharge  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 Recommended Operating Conditions  
See(1)  
MIN  
MAX  
18  
UNIT  
V
VKA  
IK  
Cathode voltage  
VREF  
0.2  
Cathode current (continuous)  
Operating free-air temperature  
70  
mA  
°C  
TA  
–55  
125  
(1) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient  
temperature is PD = (TJ(max) – TA) / θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.  
6.4 Thermal Information  
TLVH431B-EP  
THERMAL METRIC(1)  
DBZ (SOT-23)  
3 PINS  
226.5  
UNIT  
RθJA  
RθJC(top)  
RθJB  
ψJT  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
91.5  
45.0  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
3.0  
ψJB  
44.7  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
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6.5 Electrical Characteristics  
at –55°C to 125°C free-air temperature (unless otherwise noted)  
PARAMETER  
Reference voltage  
VREF deviation(2)  
TEST CONDITIONS  
MIN  
1.234  
1.221  
TYP  
MAX UNIT  
TA = 25°C  
1.24  
1.246  
V
VKA = VREF  
,
VREF  
TA = full range(1)  
1.265  
IK = 10 mA, see Figure 23  
VREF(dev)  
VKA = VREF, IK = 10 mA, see Figure 23  
11  
31  
mV  
DVREF  
DVKA  
Ratio of VREF change to  
cathode voltage change  
IK = 10 mA, VK = VREF to 18 V,  
see Figure 24  
TA = 25°C  
–1.5  
–2.7 mV/V  
IK = 10 mA, R1 = 10 k, R2 =  
open, see Figure 24  
Iref  
Reference terminal current  
Iref deviation(2)  
TA = 25°C  
0.1  
0.5  
0.5  
μA  
μA  
IK = 10 mA, R1 = 10 k, R2 = open,  
Iref(dev)  
0.15  
60  
see Figure 24(1)  
TA = 25°C  
TA = full range(1)  
100  
200  
0.1  
Minimum cathode current for  
regulation  
IK(min)  
VKA = VREF, see Figure 23  
μA  
TA = 25°C  
TA = full range(1)  
0.02  
0.25  
VREF = 0, VKA = 18 V,  
see Figure 25  
IK(off)  
|zKA  
Off-state cathode current  
Dynamic impedance(3)  
μA  
0.7  
VKA = VREF, f 1 kHz, IK = 0.2  
mA to 70 mA, see Figure 23  
|
TA = 25°C  
0.4  
(1) Full temperature range is –55°C to 125°C.  
(2) The deviation parameters VREF(dev) and Iref(dev) are defined as the differences between the maximum and minimum values obtained over  
the rated temperature range. The average full-range temperature coefficient of the reference input voltage, αVREF, is defined as:  
VREF(dev)  
æ
ç
è
ö
÷
ø
´ 106  
V
T
= 25°C  
DTA  
ppm  
(
)
æ
ç
è
ö
÷
ø
REF  
A
aVREF  
=
°C  
where ΔTA is the rated operating free-air temperature range of the device.  
αVREF can be positive or negative, depending on whether minimum VREF or maximum VREF, respectively, occurs at the lower  
temperature.  
(3) The dynamic impedance is defined as:  
DVKA  
z
=
ka  
DIK  
When the device is operating with two external resistors (see Figure 24), the total dynamic impedance of the circuit is defined as:  
DV  
DI  
R1  
æ
ç
è
ö
z
¢ =  
»
z
´
ka  
1 +  
÷
ka  
R2 ø  
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6.6 Typical Characteristics  
Operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions  
table are not implied.  
1.252  
1.25  
250  
225  
200  
175  
150  
125  
100  
75  
1.248  
1.246  
1.244  
1.242  
1.24  
1.238  
50  
-55  
-30  
-5  
20  
45  
70  
95  
120  
-55  
-30  
-5  
20  
45  
70  
95  
120  
TJ - Junction Temperature (èC)  
TJ - Junction Temperature (èC)  
D001  
D002  
Figure 1. Reference Voltage  
vs Junction Temperature  
Figure 2. Reference Input Current  
vs Junction Temperature  
250  
70  
~
~
200  
150  
100  
50  
10  
~
~
5
0
−5  
0
50  
100  
150  
200  
250  
−10  
−15  
−1  
0.5  
0
0.5  
1
1.5  
−1  
−0.5  
0
0.5  
1
1.5  
V
KA  
− Cathode Voltage − V  
V
KA  
− Cathode Voltage − V  
VKA = VREF  
TA = 25°C  
VKA = VREF  
TA = 25°C  
Figure 3. Cathode Current  
vs Cathode Voltage  
Figure 4. Cathode Current  
vs Cathode Voltage  
120  
115  
110  
105  
100  
95  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
90  
85  
80  
75  
70  
65  
60  
55  
50  
0
-55  
-30  
-5  
20  
45  
70  
95  
120  
-55  
-30  
-5  
20  
45  
70  
95  
120  
TJ - Junction Temperature (èC)  
TJ - Junction Temperature (èC)  
D003  
D004  
Figure 5. Minimum Cathode Current  
vs Junction Temperature  
Figure 6. Off-State Cathode Current  
vs Junction Temperature  
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Typical Characteristics (continued)  
Operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions  
table are not implied.  
0.025  
0
-0.1  
0
-0.2  
-0.3  
% Change (avg)  
− 0.025  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1  
)
% Change (3δ  
− 0.05  
− 0.075  
− 0.1  
)
% Change (−3  
δ
− 0.125  
-55  
-30  
-5  
20  
45  
70  
95  
120  
0
10  
20  
30  
40  
50  
60  
TJ - Junction Temperature (èC)  
(1)  
D005  
Operating Life at 55°C − kh  
(1) Extrapolated from life-test data taken at 125°C; the activation  
energy assumed is 0.7 eV.  
IK = 1 mA  
Figure 8. Percentage Change in VREF  
vs Operating Life at 55°C  
Figure 7. Ratio of Delta Reference Voltage to Delta Cathode  
Voltage vs Junction Temperature  
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Typical Characteristics (continued)  
Operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions  
table are not implied.  
350  
3 V  
1 kW  
300  
+
750 W  
2200 mF  
470 mF  
250  
200  
150  
TLE2027  
+
+
_
TP  
820 W  
TLVH431  
TLVH432  
160 kW  
160 W  
10  
100  
1 k  
10 k  
100 k  
f – Frequency – (Hz)  
VKA = VREF  
IK = 1 mA  
TA = 25°C  
Figure 9. Equivalent Input Noise Voltage  
Figure 10. Test Circuit for Equivalent Noise Voltage  
vs Frequency  
3 V  
10  
8
6
1 kW  
0.47 mF  
TLE2027  
+
750 W  
470 mF  
4
2
2200 mF  
+
TLE2027  
+
TP  
10 kW 10 kW  
2.2 mF  
+
+
_
_
820 W  
160 kW  
0.1 mF  
1 mF  
0
−2  
−4  
−6  
TLVH431  
TLVH432  
1 MW  
CRO  
33 kW  
33 kW  
16 W  
−8  
−10  
0
2
4
6
8
10  
t − Time − (s)  
f = 0.1 Hz to 10 Hz  
IK = 1 mA  
TA = 25°C  
Figure 12. Test Circuit for 0.1-Hz to 10-Hz  
Equivalent Noise Voltage  
Figure 11. Equivalent Input Noise Voltage  
Over a 10-s Period  
80  
70  
0°  
Output  
36°  
I
K
6.8 kW  
60  
50  
72°  
180 W  
10 mF  
108°  
40  
144°  
180°  
5 V  
30  
20  
10  
4.3 kW  
0
−10  
−20  
GND  
100  
1 k  
10 k  
100 k  
1 M  
f − Frequency − (Hz)  
IK = 1 mA  
TA = 25°C  
Figure 14. Test Circuit for Voltage Gain and Phase Margin  
Figure 13. Voltage Gain and Phase Margin  
vs Frequency  
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Typical Characteristics (continued)  
Operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions  
table are not implied.  
3.5  
18 k  
Output  
Input  
3
2.5  
2
I
k
Pulse  
Generator  
f = 100 kHz  
50 Ω  
1.5  
1
Output  
0.5  
0
GND  
0.5  
0
1
2
3
4
5
6
7
8
t − Time − µs  
R = 18 kΩ  
TA = 25°C  
Figure 16. Test Circuit for Pulse Response 1  
Figure 15. Pulse Response 1  
3.5  
3
1.8 k  
Output  
Input  
2.5  
2
I
K
Pulse  
Generator  
f = 100 kHz  
50 Ω  
1.5  
1
Output  
0.5  
0
GND  
0.5  
0
1
2
3
4
5
6
7
8
t − Time − µs  
R = 1.8 kΩ  
TA = 25°C  
Figure 18. Test Circuit for Pulse Response 2  
Figure 17. Pulse Response 2  
IK  
30 kW  
IK  
100 µF  
50 W  
I2  
CL  
I1  
VKA = VREF (1.25 V)  
TA = 25°C  
Figure 20. Phase Margin vs Capacitive Load  
Figure 19. Phase Margin Test Circuit  
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Typical Characteristics (continued)  
Operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions  
table are not implied.  
IK  
IK  
VKA = 2.5 V  
TA = 25°C  
VKA = 5 V  
TA = 25°C  
Figure 21. Phase Margin vs Capacitive Load  
Figure 22. Phase Margin vs Capacitive Load  
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7 Parameter Measurement Information  
Input  
V
O
I
K
V
REF  
Figure 23. Test Circuit for VKA = VREF, VO = VKA = VREF  
Input  
V
O
I
K
R1  
I
ref  
R2  
V
REF  
Figure 24. Test Circuit for VKA > VREF, VO = VKA = VREF × (1 + R1 / R2) + Iref × R1  
Input  
V
O
I
K(off)  
Figure 25. Test Circuit for IK(off)  
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8 Detailed Description  
8.1 Overview  
TLVH431B-EP is a low power counterpart to TL431, having lower reference voltage (1.24 V versus 2.5 V) for  
lower voltage adjustability and lower minimum cathode current (Ik(min) = 200 µA versus 1 mA). Like TL431,  
TLVH431B-EP is used in conjunction with its key components to behave as a single voltage reference, error  
amplifier, voltage clamp or comparator with integrated reference.  
TLVH431B-EP is also a higher voltage counterpart to TLV431, with cathode voltage adjustability from 1.24 V to  
18 V, making this part optimum for a wide range of end equipments in industrial, auto, telecom and computing. In  
order for this device to behave as a shunt regulator or error amplifier, > 200 µA (Imin(max)) must be supplied in to  
the cathode pin. Under this condition, feedback can be applied from the Cathode and Ref pins to create a replica  
of the internal reference voltage.  
The reference voltage initial tolerance (at 25°C) is 0.5% and these devices are characterized for operation from  
–55°C to 125°C.  
8.2 Functional Block Diagram  
CATHODE  
REF  
+
V
REF  
= 1.24 V  
ANODE  
Figure 26. Equivalent Schematic  
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Functional Block Diagram (continued)  
Cathode  
REF  
Anode  
Figure 27. Detailed Schematic  
8.3 Feature Description  
TLVH431B-EP consists of an internal reference and amplifier that outputs a sink current base on the difference  
between the reference pin and the virtual internal pin. The sink current is produced by an internal Darlington pair.  
When operated with enough voltage headroom (1.24 V) and cathode current (Ika), TLVH431B-EP forces the  
reference pin to 1.24 V. However, the reference pin can not be left floating, as it needs Iref 0.5 µA (see the  
Specifications section). This is because the reference pin is driven into an NPN, which needs base current in  
order operate properly.  
When feedback is applied from the Cathode and Reference pins, TLVH431B-EP behaves as a Zener diode,  
regulating to a constant voltage dependent on current being supplied into the cathode. This is due to the internal  
amplifier and reference entering the proper operating regions. The same amount of current needed in the above  
feedback situation must be applied to this device in open loop, servo, or error amplifying implementations in  
order for it to be in the proper linear region giving TLVH431B-EP enough gain.  
Unlike many linear regulators, TLVH431B-EP is internally compensated to be stable without an output capacitor  
between the cathode and anode. If instead it is desired to use an output capacitor, Figure 20, Figure 21, and  
Figure 22 can be used as a guide to assist in choosing the correct capacitor to maintain stability.  
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8.4 Device Functional Modes  
8.4.1 Open Loop (Comparator)  
When the cathode/output voltage or current of TLVH431B-EP is not being fed back to the reference/input pin in  
any form, this device is operating in open loop. With proper cathode current (Ika) applied to this device,  
TLVH431B-EP has the characteristics shown in Figure 4. With such high gain in this configuration, the  
TLVH431B-EP device is typically used as a comparator. With the reference integrated makes TLVH431B-EP the  
preferred choice when users are trying to monitor a certain level of a single signal.  
8.4.2 Closed Loop  
When the cathode/output voltage or current of TLVH431B-EP is being fed back to the reference/input pin in any  
form, this device is operating in closed loop. The majority of applications involving TLVH431B-EP use it in this  
manner to regulate a fixed voltage or current. The feedback enables this device to behave as an error amplifier,  
computing a portion of the output voltage and adjusting it to maintain the desired regulation. This is done by  
relating the output voltage back to the reference pin in a manner to make it equal to the internal reference  
voltage, which can be accomplished through resistive or direct feedback.  
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9 Applications and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
9.1 Application Information  
Figure 28 shows the TLVH431B-EP used in a 3.3-V isolated flyback supply. Output voltage VO can be as low as  
reference voltage VREF (1.24 V ± 1%). The output of the regulator, plus the forward voltage drop of the  
optocoupler LED (1.24 + 1.4 = 2.64 V), determine the minimum voltage that can be regulated in an isolated  
supply configuration. Regulated voltage as low as 2.7 Vdc is possible in the topology shown in Figure 28.  
The TLVH431B-EP family of devices are prevalent in these applications, being designers go to choice for  
secondary side regulation. Due to this prevalence, this section explains operation and design in both states of  
TLVH431B-EP that this application will see, open loop (Comparator + VREF) and closed loop (Shunt Regulator).  
Further information about system stability and using a TLVH431B-EP device for compensation see  
Compensation Design With TL431 for UCC28600, SLUA671.  
~
V
I
+
120 V  
P
~
V
O
3.3 V  
P
P
Gate Drive  
V
CC  
Controller  
V
FB  
TLVH431  
Current  
Sense  
GND  
P
P
P
P
Figure 28. Flyback With Isolation Using TLVH431B-EP  
as Voltage Reference and Error Amplifier  
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9.2 Typical Applications  
9.2.1 Comparator With Integrated Reference (Open Loop)  
Vsup  
Rsup  
Vout  
CATHODE  
R1  
R2  
VL  
R
IN  
REF  
V
IN  
+
1.24 V  
ANODE  
Figure 29. Comparator Application Schematic  
9.2.1.1 Design Requirements  
For this design example, use the parameters listed in Table 1 as the input parameters.  
Table 1. Design Parameters  
DESIGN PARAMETER  
Input Voltage Range  
Input Resistance  
EXAMPLE VALUE  
0 V to 5 V  
10 kΩ  
Supply Voltage  
9 V  
Cathode Current (Ik)  
Output Voltage Level  
Logic Input Thresholds VIH/VIL  
500 µA  
~1 V – Vsup  
VL  
9.2.1.2 Detailed Design Procedure  
When using TLVH431B-EP as a comparator with reference, determine the following:  
Input voltage range  
Reference voltage accuracy  
Output logic input high and low level thresholds  
Current source resistance  
9.2.1.2.1 Basic Operation  
In the configuration shown in Figure 29, TLVH431B-EP behaves as a comparator, comparing the Vref pin voltage  
to the internal virtual reference voltage. When provided a proper cathode current (Ik), TLVH431B-EP will have  
enough open loop gain to provide a quick response. With the TLVH431B-EP's max Operating Current (Imin) being  
100 uA and up to 150 uA over temperature, operation below that could result in low gain, leading to a slow  
response.  
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9.2.1.2.2 Overdrive  
Slow or inaccurate responses can also occur when the reference pin is not provided enough overdrive voltage.  
This is the amount of voltage that is higher than the internal virtual reference. The internal virtual reference  
voltage will be within the range of 1.24 V ±(0.5%, 1.0% or 1.5%) depending on which version is being used.  
The more overdrive voltage provided, the faster the TLVH431B-EP will respond. See Figure 30 and Figure 31 for  
the output responses to various input voltages.  
For applications where TLVH431B-EP is being used as a comparator, it is best to set the trip point greater than  
the positive expected error (that is, +1.0% for the A version). For fast response, setting the trip point to > 10% of  
the internal Vref should suffice.  
For minimal voltage drop or difference from Vin to the ref pin, it is recommended to use an input resistor < 10 kΩ  
to provide Iref.  
9.2.1.2.3 Output Voltage and Logic Input Level  
In order for TLVH431B-EP to properly be used as a comparator, the logic output must be readable by the  
receiving logic device. This is accomplished by knowing the input high and low level threshold voltage levels,  
typically denoted by VIH and VIL.  
As shown in Figure 30 and Figure 31, TLVH431B-EP's output low level voltage in open-loop/comparator mode is  
approximately 1 V, which is sufficient for some 3.3-V supplied logic. However, would not work for 2.5-V and 1.8-V  
supplied logic. To accommodate this a resistive divider can be tied to the output to attenuate the output voltage  
to a voltage legible to the receiving low-voltage logic device.  
TLVH431B-EP's output high voltage is approximately VSUP due to TLVH431B-EP being open-collector. If VSUP is  
much higher than the receiving logic's maximum input voltage tolerance, the output must be attenuated to  
accommodate the outgoing logic's reliability.  
When using a resistive divider on the output, be sure to make the sum of the resistive divider (R1 and R2 in  
Figure 29) is much greater than RSUP in order to not interfere with TLVH431B-EP's ability to pull close to VSUP  
when turning off.  
9.2.1.2.3.1 Input Resistance  
TLVH431B-EP requires an input resistance in this application in order to source the reference current (IREF  
)
needed from this device to be in the proper operating regions while turning on. The actual voltage seen at the ref  
pin will be VREF = VIN – IREF × RIN. Because IREF can be as high as 0.5 µA, TI recommends to use a resistance  
small enough that will mitigate the error that IREF creates from VIN.  
9.2.1.3 Application Curves  
14  
13  
12  
11  
10  
9
10  
9
Vin~1.24V (+/-5%)  
Vo(Vin=1.18V)  
Vo(Vin=1.24V)  
Vo(Vin=1.30V)  
Vo(Vin=5.0V)  
Vin=5.0V  
8
7
6
5
8
7
4
6
3
5
2
4
1
3
0
2
-1  
1
0
-0.4  
-2  
-0.4  
-0.2  
0
0.2  
Time (ms)  
0.4  
0.6  
0.8  
-0.2  
0
0.2  
Time (ms)  
0.4  
0.6  
0.8  
D001  
D001  
Figure 30. Output Response With Small Overdrive  
Voltages  
Figure 31. Output Response With Large Overdrive Voltage  
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9.2.2 Shunt Regulator/Reference  
RSUP  
R 1  
R 2  
VSUP  
V
= ( 1+  
) V  
REF  
O
R1  
CATHODE  
0.1%  
REF  
VREF  
TLVH431  
ANODE  
CL  
R2  
0.1%  
Copyright © 2016, Texas Instruments Incorporated  
Figure 32. Shunt Regulator Schematic  
9.2.2.1 Design Requirements  
For this design example, use the parameters listed in Table 2 as the input parameters.  
Table 2. Design Parameters  
DESIGN PARAMETER  
Reference Initial Accuracy  
Supply Voltage  
EXAMPLE VALUE  
1.0%  
6 V  
Cathode Current (Ik)  
Output Voltage Level  
Load Capacitance  
500 µA  
1.24 V - 18 V  
100 nF  
Feedback Resistor Values and  
Accuracy (R1 and R2)  
10 kΩ  
9.2.2.2 Detailed Design Procedure  
When using TLVH431B-EP as a Shunt Regulator, determine the following:  
Input voltage range  
Temperature range  
Total accuracy  
Cathode current  
Reference initial accuracy  
Output capacitance  
9.2.2.2.1 Programming Output/Cathode Voltage  
To program the cathode voltage to a regulated voltage a resistive bridge must be shunted between the cathode  
and anode pins with the mid point tied to the reference pin. This can be seen in Figure 32, with R1 and R2 being  
the resistive bridge. The cathode/output voltage in the shunt regulator configuration can be approximated by the  
equation shown in Figure 32. The cathode voltage can be more accurately determined by taking in to account  
the cathode current:  
VO=(1 + R1 / R2) × VREF –I REF × R1  
In order for this equation to be valid, TLVH431B-EP must be fully biased so that it has enough open loop gain to  
mitigate any gain error. This can be done by meeting the Imin spec denoted in the Specifications section.  
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9.2.2.2.2 Total Accuracy  
When programming the output above unity gain (VKA = VREF), TLVH431B-EP is susceptible to other errors that  
may effect the overall accuracy beyond VREF. These errors include:  
R1 and R2 accuracies  
VI(dev) - Change in reference voltage over temperature  
ΔVref / ΔVKA - Change in reference voltage to the change in cathode voltage  
|zKA| - Dynamic impedance, causing a change in cathode voltage with cathode current  
Worst case, cathode voltage can be determined taking all of the variables in to account. The application note  
Setting the Shunt Voltage on an Adjustable Shunt Regulator, SLVA445, assists designers in setting the shunt  
voltage to achieve optimum accuracy for this device.  
9.2.2.2.3 Stability  
Though TLVH431B-EP is stable with no capacitive load, the device that receives the shunt regulator's output  
voltage could present a capacitive load that is within the TLVH431B-EP region of stability, shown in Figure 20,  
Figure 21 and Figure 22. Also, designers may use capacitive loads to improve the transient response or for  
power supply decoupling.  
TI recommends to choose capacitors that will give a phase margin > 5° to assure stability of the TLVH431B-EP.  
9.2.2.3 Application Curve  
6.5  
6
5.5  
5
Vsup  
Vka=Vref  
4.5  
4
R1=10kW & R2=10kW  
3.5  
3
2.5  
2
1.5  
1
0.5  
0
-0.5  
-1E-6  
1E-6  
3E-6  
5E-6  
7E-6  
9E-6  
Time (s)  
D001  
Figure 33. TLVH431B-EP Start-Up Response  
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10 Power Supply Recommendations  
When using TLVH431B-EP as a Linear Regulator to supply a load, designers will typically use a bypass  
capacitor on the output/cathode pin. When doing this, be sure that the capacitance is within the stability criteria  
shown in Figure 20, Figure 21, and Figure 22.  
To not exceed the maximum cathode current, be sure that the supply voltage is current limited. Also, limit the  
current being driven into the Ref pin, as not to exceed its absolute maximum rating.  
For applications shunting high currents, pay attention to the cathode and anode trace lengths, adjusting the width  
of the traces to have the proper current density.  
11 Layout  
11.1 Layout Guidelines  
Place decoupling capacitors as close to the device as possible. Use appropriate widths for traces when shunting  
high currents to avoid excessive voltage drops.  
11.2 Layout Example  
DBZ  
(TOP VIEW)  
Rref  
REF  
Vin  
1
2
ANODE  
3
Rsup  
CATHODE  
GND  
Vsup  
CL  
GND  
Figure 34. DBZ Layout Example  
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12 Device and Documentation Support  
12.1 Documentation Support  
12.1.1 Related Documentation  
For related documentation see the following:  
Compensation Design With TL431 for UCC28600, SLUA671  
Setting the Shunt Voltage on an Adjustable Shunt Regulator, SLVA445  
12.2 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper  
right corner, click on Alert me to register and receive a weekly digest of any product information that has  
changed. For change details, review the revision history included in any revised document.  
12.3 Support Resources  
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight  
from the experts. Search existing answers or ask your own question to get the quick design help you need.  
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do  
not necessarily reflect TI's views; see TI's Terms of Use.  
12.4 Trademarks  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
12.5 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
12.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
13 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical packaging and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser based versions of this data sheet, refer to the left hand navigation.  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TLVH431BMDBZREP  
V62/19622-01XE  
ACTIVE  
ACTIVE  
SOT-23  
SOT-23  
DBZ  
DBZ  
3
3
3000 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-55 to 125  
-55 to 125  
NIPDAU  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Dec-2020  
OTHER QUALIFIED VERSIONS OF TLVH431B-EP :  
Catalog: TLVH431B  
Automotive: TLVH431B-Q1  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
11-Dec-2019  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TLVH431BMDBZREP  
SOT-23  
DBZ  
3
3000  
180.0  
8.4  
3.15  
2.77  
1.22  
4.0  
8.0  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
11-Dec-2019  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOT-23 DBZ  
SPQ  
Length (mm) Width (mm) Height (mm)  
213.0 191.0 35.0  
TLVH431BMDBZREP  
3
3000  
Pack Materials-Page 2  
PACKAGE OUTLINE  
DBZ0003A  
SOT-23 - 1.12 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
2.64  
2.10  
1.12 MAX  
1.4  
1.2  
B
A
0.1 C  
PIN 1  
INDEX AREA  
1
0.95  
(0.125)  
3.04  
2.80  
1.9  
3
(0.15)  
NOTE 4  
2
0.5  
0.3  
3X  
0.10  
0.01  
(0.95)  
TYP  
0.2  
C A B  
0.25  
GAGE PLANE  
0.20  
0.08  
TYP  
0.6  
0.2  
TYP  
SEATING PLANE  
0 -8 TYP  
4214838/D 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Reference JEDEC registration TO-236, except minimum foot length.  
4. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBZ0003A  
SOT-23 - 1.12 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
3X (1.3)  
1
3X (0.6)  
SYMM  
3
2X (0.95)  
2
(R0.05) TYP  
(2.1)  
LAND PATTERN EXAMPLE  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214838/D 03/2023  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBZ0003A  
SOT-23 - 1.12 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
3X (1.3)  
1
3X (0.6)  
SYMM  
3
2X(0.95)  
2
(R0.05) TYP  
(2.1)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 THICK STENCIL  
SCALE:15X  
4214838/D 03/2023  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
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DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
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