TMAG5115 [TI]
具有低抖动（快速响应）的高速霍尔效应锁存器;
| 型号： | TMAG5115 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有低抖动（快速响应）的高速霍尔效应锁存器 锁存器 |
| 文件： | 总27页 (文件大小：1302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TMAG5115
ZHCSPS6A –DECEMBER 2022 –REVISED FEBRUARY 2023
TMAG5115 高速、低抖动霍尔效应锁存器
1 特性
3 说明
• 高速数字双极锁存霍尔传感器
– 低传播延迟：5µs
– 低抖动：5µs
– 带宽(BW)：60kHz
• 支持宽电压范围：
TMAG5115 器件是一款高性能霍尔效应锁存传感器，
具有快速传播延迟和低抖动。该器件还在整个温度范围
内具有高灵敏度稳定性，并为需要高 RPM 的应用提供
了集成保护功能。低抖动和低传播延迟相结合有助于提
高功效并降低系统级寄生噪声。
– 2.5 V 至26 V
– 无需外部稳压器
• 快速开通时间：62.5µs
• 高精度阈值：
该器件配有一个灌电流能力达 15mA 的开漏输出级。
TMAG5115 具有 2.5V 至 26V 的宽工作电压范围，专
为各种工业和商业应用而设计。针对输出短路、过流和
过热情况提供内部保护功能。
– ±3mT，最大变化为±1mT
– ±1mT，最大变化为±0.7mT
• 保护特性：
TMAG5115 采用业界通用的SOT-23 封装。
封装信息(1)
封装尺寸（标称值）
器件型号
TMAG5115
封装
SOT-23 (3)
– 输出短路保护
– 输出电流限制
– 过温保护
2.92mm × 1.30mm
(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。
• 开漏输出（15mA 灌电流）
• 宽工作温度范围：
– –40°C 至125°C
• 小型封装和外形尺寸：
– 表面贴装3 引脚SOT-23
• 2.92mm × 1.30mm
2 应用
• 无线电动工具
• 扫地机器人
• 计算机风扇
• 阀和电磁阀状态
• 工业无刷直流电机
TMAG5115
OUT
B
hys
2.5 V to 26 V
TMAG5115
VCC
OUT
GND
B (mT)
VCC
B
B
OP
RP
Controller
B
OF
OUT
(North)
(South)
GND
输出状态
VCC
OUT
GND
简化版应用
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SBASAJ1
TMAG5115
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ZHCSPS6A –DECEMBER 2022 –REVISED FEBRUARY 2023
Table of Contents
8.3 Feature Description.....................................................9
8.4 Device Functional Modes..........................................14
9 Application and Implementation..................................15
9.1 Application Information............................................. 15
9.2 Typical Applications.................................................. 15
9.3 Power Supply Recommendations.............................18
9.4 Layout....................................................................... 18
10 Device and Documentation Support..........................19
10.1 Device Support....................................................... 19
10.2 接收文档更新通知................................................... 19
10.3 支持资源..................................................................19
10.4 Trademarks.............................................................19
10.5 静电放电警告.......................................................... 19
10.6 术语表..................................................................... 19
11 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Device Comparison.........................................................3
6 Pin Configuration and Functions...................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings........................................ 4
7.2 ESD Ratings............................................................... 4
7.3 Recommended Operating Conditions.........................4
7.4 Thermal Information....................................................4
7.5 Electrical Characteristics.............................................5
7.6 Magnetic Characteristics.............................................5
7.7 Typical Characteristics................................................6
8 Detailed Description........................................................8
8.1 Overview.....................................................................8
8.2 Functional Block Diagram...........................................8
Information.................................................................... 19
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision * (December 2022) to Revision A (February 2023)
Page
• 向特性 部分添加了 TMAG5115A 阈值................................................................................................................1
• Added Device Comparison table........................................................................................................................ 3
• Added TMAG5115A magnetic specifications......................................................................................................5
• Added typical characteristic curves for TMAG5115A..........................................................................................6
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5 Device Comparison
表5-1. Device Comparison
TYPICAL
VERSION
TYPICAL
MAGNETIC
OUTPUT
TYPE
SENSOR
ORIENTATION
PACKAGES
AVAILABLE
BANDWIDTH
THRESHOLD HYSTERESIS RESPONSE
TMAG5115A1C
TMAG5115B1C
3 mT
6 mT
Active Low
Active Low
Open-drain
Open-drain
Z
Z
60 kHz
60 kHz
SOT-23
SOT-23
1.8 mT
0.6 mT
6 Pin Configuration and Functions
For additional configuration information, see the Mechanical, Packaging, and Orderable Information section.
VCC
OUT
1
2
3
GND
Not to scale
图6-1. DBZ Package 3-Pin SOT-23 Top View
表6-1. Pin Functions
PIN
TYPE
DESCRIPTION
NAME
GND
OUT
VCC
NO.
3
GND
O
Ground pin
2
Hall sensor open-drain output. Requires a resistor pullup, typically 10 kΩ.
Supply pin. 2.5 V to 26 V. TI recommends to use a minimum 0.01-µF capacitor.
1
P
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
30
UNIT
V
VCC
Power supply voltage
Output sink current
–0.3
ISINK
30
mA
T
Magnetic flux density, BMAX
Junction temperature, TJ
Storage temperature, Tstg
Unlimited
–65
Unlimited
150
°C
°C
150
–65
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001((1))
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), ANSI/ESDA/
JEDEC JS-002((2))
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
26
UNIT
V
VCC
VO
Power supply voltage((1))
Output pin voltage
2.5
0
26
V
ISINK
TA
Output pin current sink
Ambient temperature
0
15
mA
°C
125
–40
(1) Operating outside the TMAG5115 Recommended Supply and Temperature Curve can cause the device to enter a thermal shutdown
state.
7.4 Thermal Information
TMAG5115
THERMAL METRIC(1)
DBZ (SOT-23)
3 PINS
208.2
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
102.3
40.6
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
9.7
ΨJT
40.2
ΨJB
RθJC(bot)
–
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
VCC = 2.5 V to 26 V
TA = –40°C to 125°C
ICC
Operating supply current
Power-on time
6
62.5
High
8
mA
µs
tON
POS
VCC > VCCmin
t <tON
Power-on state
OUTPUT
VOL
Low-level output voltage
IOL = 5 mA
0
0.7
1
V
IOH
Output leakage current
VCC = 2.5 V to 26 V
0.1
25
µA
mA
ISC
Output short-circuit current protection
15
80
RL = 10 kΩ
CL = 50 pF
VCC = 12 V
tR
Output rise time
Output fall time
2
2
µs
µs
RL = 10 kΩ
CL = 50 pF
VCC = 12 V
tF
tPD
Propagation delay time
Output jitter window
5
5
6
µs
µs
1-kHz triangle magnetic wave with peak
value at ±8 mT
Jitter
1-kHz square magnetic wave with peak
value at ±8 mT
Jitter
Output jitter window
0.2
µs
Noisepp Internal Noise
TSHUT Junction temperature shutdown threshold
TREC Junction temperature recovery threshold
FREQUENCY RESPONSE
125
168
143
200
180
155
µT
°C
°C
156
131
fCHOP
fBW
Chopping frequency
Signal bandwidth
TMAG5115xx
TMAG5115xx
1000
60
kHz
kHz
7.6 Magnetic Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
TMAG5115A
BOP
BRP
Magnetic field operating point
Magnetic field release point
Magnetic hysteresis BOP - BRP
0.2
1
–1
2
1.7
–0.2
3.4
mT
mT
mT
VCC = 2.5 V to 26 V
–1.7
BHYS
0.4
TMAG5115B
BOP
BRP
Magnetic field operating point
2
–4
4
3
–3
6
4
–2
8
mT
mT
mT
Magnetic field release point
VCC = 2.5 V to 26 V
BHYS
Magnetic hysteresis BOP - BRP
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7.7 Typical Characteristics
8
7
6
5
4
3
2
4
3
BOP
BRP
2
1
0
-1
-2
-3
-4
VCC = 2.5 V
VCC = 12 V
VCC = 26 V
1
0
-40
-15
10
35
60
85
110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (C)
Temperature (C)
VCC = 12 V
图7-2. TMAG5115A BOP and BRP vs TA
.
图7-1. ICC vs TA
4
3
4
3
2
1
0
BOP
BRP
BHYST
2
1
0
-1
-2
-3
-4
0
5
10
15
20
25
30
-40
-15
10
35
60
85
110 125
Supply Voltage (V)
Temperature (C)
TA = 25°C
图7-3. TMAG5115A BOP and BRP vs VCC
VCC = 12 V
图7-4. TMAG5115A BHYST vs TA
4
3
2
1
0
4
3
BHYST
2
1
BOP
BRP
0
-1
-2
-3
-4
-40
-15
10
35
60
85
110 125
0
5
10
15
20
25
30
Temperature (C)
Supply Voltage (V)
VCC = 12 V
TA = 25°C
图7-6. TMAG5115B BOP and BRP vs TA
图7-5. TMAG5115A BHYST vs VCC
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7.7 Typical Characteristics (continued)
4
3
2
9
8
7
6
5
4
3
BHYST
1
BOP
BRP
0
-1
-2
-3
-4
0
5
10
15
20
25
30
-40
-15
10
35
60
85
110 125
Supply Voltage (V)
Temperature (C)
TA = 25°C
VCC = 12 V
图7-7. TMAG5115B BOP and BRP vs VCC
图7-8. TMAG5115B BHYST vs TA
9
BHYST
8
7
6
5
4
3
0
5
10
15
20
25
30
Supply Voltage (V)
TA = 25°C
图7-9. TMAG5115B BHYST vs VCC
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8 Detailed Description
8.1 Overview
The TMAG5115 is a chopper-stabilized Hall sensor with a digital latched output for magnetic sensing
applications. The TMAG5115 device can be powered with a supply voltage between 2.5 V and 26 V. The field
polarity is defined as follows: a south pole near the marked side of the package is a positive magnetic field, and
a north pole near the marked side of the package is a negative magnetic field.
The output state is dependent on the magnetic field perpendicular to the package. A south pole near the marked
side of the package causes the output to pull low (operate point, BOP), and a north pole near the marked side of
the package causes the output to release (release point, BRP). Hysteresis is included in between the operate
point and the release point therefore magnetic-field noise does not accidentally trip the output.
An external pullup resistor is required on the OUT pin. The OUT pin can be pulled up to VCC or to a different
voltage supply to allow for easier interfacing with controller circuits.
8.2 Functional Block Diagram
VCC
Regulated Supply
OUT
Temperature
Compensa on
Bias
OCP
+
Gate
Drive
Hall Element
–
Reference
GND
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8.3 Feature Description
8.3.1 Field Direction Definition
图 8-1 shows the positive magnetic field defined as a south pole near the marked side of the package and the
negative magnetic field defined as a north pole near the marked side of the package.
SOT-23 (DBZ)
B > 0 mT
B < 0 mT
N
S
S
N
N = North pole, S = South pole
图8-1. Field Direction Definition
8.3.2 Device Output
If the device is powered on with a magnetic field strength between BRP and BOP, then the device output is
indeterminate and can either be Hi-Z or low. If the field strength is greater than BOP, then the output is pulled low.
If the field strength is less than BRP, then the output is released.
OUT
BRP (North)
BOF
BOP (South)
B (mT)
图8-2. TMAG5115 BOP > 0
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8.3.3 Power-On Time
After applying VCC to the TMAG5115, ton must elapse before the OUT pin is valid. During the power-up
sequence, the output is Hi-Z. A pulse as shown in 图 8-3 and 图 8-4 occurs at the end of ton. This pulse can
allow the host processor to determine when the TMAG5115 output is valid after start-up. In Case 1 (图 8-3) and
Case 2 (图8-4), the output is defined assuming a constant magnetic field B > BOP and B < BRP
.
VCC
t (s)
t (s)
t (s)
B (mT)
BOP
BRP
OUT
Valid Output
ton
图8-3. Case 1: Power On When B > BOP
VCC
t (s)
t (s)
t (s)
B (mT)
BOP
BRP
OUT
Valid Output
ton
图8-4. Case 2: Power On When B < BRP
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If the device is powered on with the magnetic field strength BRP < B < BOP, then the device output is
indeterminate and can either be Hi-Z or pulled low. During the power-up sequence, the output is held Hi-Z until
ton has elapsed. At the end of ton, a pulse is given on the OUT pin to indicate that ton has elapsed. After ton, if the
magnetic field changes such that BOP < B, the output is released. Case 3 (图 8-5) and Case 4 (图 8-6) show
examples of this behavior.
V
CC
t (s)
t (s)
t (s)
B (mT)
B
B
OP
RP
OUT
Valid Output
t
t
d
on
图8-5. Case 3: Power On When BRP < B < BOP, Followed by B > BOP
VCC
t (s)
t (s)
t (s)
B (mT)
BOP
BRP
OUT
Valid Output
ton
td
图8-6. Case 4: Power On When BRP < B < BOP, Followed by B < BRP
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8.3.4 Output Stage
图8-7 shows the TMAG5115 open-drain NMOS output structure, rated to sink up to 15 mA of current.
备注
Vref is not restricted to VCC. The allowable voltage range of this pin is specified in the Recommended
Operating Conditions.
Vref
R1
OUT
ISINK
C2
OCP
Gate
Drive
GND
图8-7. NMOS Open-Drain Output
Select a value for C2 based on the system bandwidth specifications as shown in 方程式1.
1
2 ì ƒBW (Hz) <
2p ì R1ì C2
(1)
Most applications do not require this C2 filtering capacitor.
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8.3.5 Protection Circuits
The TMAG5115 device is fully protected against overcurrent and overtemperature conditions. 表 8-1 lists a
summary of the protection circuits.
表8-1. Protection Circuit Summary
FAULT
CONDITION
SINK ≥ISC
DEVICE
DESCRIPTION
RECOVERY
FET overload
Operating
Output current is clamped to ISC
ISINK < ISC
I
Device will shutdown until recovery
temperature is reached
Overtemperature
Operating
TJ ≥156°C
TJ ≤156°C
8.3.5.1 Short-Circuit Protection
An analog current-limit circuit limits the current through the FET. The driver current is clamped to ISC. During this
clamping, the rDS(on) of the output FET is increased from the nominal value.
8.3.5.2 Overtemperature Protection
The TMAG5115 features overtemperature protection to prevent damage to the device and system in the case of
runaway thermal heating. If the output is short-circuited, there will be greater power dissipation through the
device causing the junction temperature to rise. If the temperature rises to above the limits specified in the
Electrical Characteristics table, the device will enter a thermal shutdown and the OUT pin will turn to High-Z
regardless of the current magnetic field detected.
The TMAG5115 thermal shutdown can be differentiated from normal operation by viewing the supply current into
the device. While in thermal shutdown, the supply current is lower than normal operation.
BOP
External Magnetic Field
BRP
TSHUT
TREC
Temperature
ICC
ICCSHUTDOWN
Supply Current
Output
图8-8. TMAG5115 Overtemperature Protection Diagram
The TMAG5115 can support a supply voltage of 2.5 V to 26 V. Higher temperature and supply conditions can
increase the junction temperature of the device, however, which could exceed the thermal shutdown limit. This
can cause a device shutdown. TI recommends to not exceed a temperature and supply combination shown in 图
8-9.
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30
25
20
15
10
5
0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (C)
图8-9. TMAG5115 Recommended Supply and Temperature Curve
8.4 Device Functional Modes
The TMAG5115 is active only when VCC is between 2.5 V and 26 V and TJ is less than 156°C.
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9 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The TMAG5115 is used in magnetic position sensing applications. The device features a high-speed architecture
to facilitate more precise field measurement. With latching magnetic characteristics, the output is turned low or
high respectively with a sufficiently strong south or north pole facing the package top side. When removing the
magnetic field, the device keeps its previous state.
For reliable functionality, the magnet must apply a flux density at the sensor greater than the corresponding
maximum BOP or BRP numbers specified in the Magnetic Characteristics table. Add additional margin to account
for mechanical tolerance, temperature effects, and magnet variation.
9.2 Typical Applications
9.2.1 Standard Circuit
C2
680 pF
(Optional)
OUT
2
R1
10 kΩ
3
V
CC
V
CC
1
C1
0.01 µF
(minimum)
图9-1. Typical Application Circuit
9.2.1.1 Design Requirements
For this design example, use the parameters listed in 表9-1 as the input parameters.
表9-1. Design Parameters
DESIGN PARAMETER
Supply voltage
REFERENCE
EXAMPLE VALUE
3.0 V to 3.6 V
10 kHz
VCC
System bandwidth
ƒBW
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9.2.1.2 Detailed Design Procedure
表9-2. External Components
COMPONENT
PIN 1
VCC
PIN 2
GND
RECOMMENDED
C1
C2
R1
A 0.01-µF (minimum) ceramic capacitor rated for VCC
Optional: Place a ceramic capacitor to GND
Requires a resistor pullup
OUT
OUT
GND
REF(1)
(1) REF is not a pin on the TMAG5115 device, but a REF supply-voltage pullup is required for the OUT pin. The OUT pin may be pulled up
to VCC
.
9.2.1.2.1 Configuration Example
In a 3.3-V system, 3.0 V ≤Vref ≤3.6 V. Use 方程式2 to calculate the allowable range for R1.
V
ref max
Vref min
Ç R1Ç
30 mA
100 µA
(2)
For this design example, use 方程式3 to calculate the allowable range of R1.
3.4 V
3.2 V
Ç R1Ç
30 mA
100 µA
(3)
(4)
Therefore:
120 Ω≤R1 ≤30 kΩ
After finding the allowable range of R1 (方程式4), select a value between 500 Ω and 32 kΩ for R1.
Assuming a system bandwidth of 10 kHz, use 方程式5 to calculate the value of C2.
1
2 ì ƒBW (Hz) <
2p ì R1ì C2
(5)
(6)
For this design example, use 方程式6 to calculate the value of C2.
1
2 ì 10 kHz <
2p ì R1ì C2
An R1 value of 10 kΩ and a C2 value less than 820 pF satisfy the requirement for a 10-kHz system bandwidth.
A selection of R1 = 10 kΩ and C2 = 680 pF would cause a low-pass filter with a corner frequency of 23.4 kHz.
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English Data Sheet: SBASAJ1
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9.2.1.3 Application Curves
OUT
OUT
No C2
C2 = 680 pF
R1 = 10 kΩpull-up
R1 = 10-kΩpull-up
图9-2. 10-kHz Switching Magnetic Field
图9-3. 10-kHz Switching Magnetic Field
0
-2
-4
-6
-8
-10
-12
-14
100
1000
10000
100000
Frequency (Hz)
D011
C2 = 680 pF
R1 = 10-kΩpull-up
图9-4. Low-Pass Filtering
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TMAG5115
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ZHCSPS6A –DECEMBER 2022 –REVISED FEBRUARY 2023
9.3 Power Supply Recommendations
The TMAG5115 device is designed to operate from an input voltage supply range between 2.5 V and 26 V. A
recommended 0.1-µF ceramic capacitor rated for VCC must be placed as close to the TMAG5115 as possible.
Larger values of the bypass capacitor may be required to attenuate any significant high-frequency ripple and
noise components generated by the power source. TI recommends limiting the supply voltage variation to less
than 50 mVPP
.
9.4 Layout
9.4.1 Layout Guidelines
The bypass capacitor should be placed near the TMAG5115 device for efficient power delivery with minimal
inductance. The external pullup resistor should be placed near the microcontroller input to provide the most
stable voltage at the input; alternatively, an integrated pullup resistor within the GPIO of the microcontroller can
be used.
Generally, using PCB copper planes underneath the TMAG5115 device has no effect on magnetic flux and does
not interfere with device performance. This is because copper is not a ferromagnetic material. However, if nearby
system components contain iron or nickel, they may redirect magnetic flux in unpredictable ways.
9.4.2 Layout Example
VCC
OUT
GND
图9-5. TMAG5115 Layout Example
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10 Device and Documentation Support
10.1 Device Support
10.1.1 Hall Sensor Location
Centered
±100 µm
700 µm ± 50 µm
图10-1. Hall Sensor Location (Not to Scale)
10.2 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
10.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
10.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
10.5 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序，可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级，大至整个器件故障。精密的集成电路可能更容易受到损坏，这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
10.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
3-Mar-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TMAG5115A1CQDBZR
TMAG5115B1CQDBZR
ACTIVE
ACTIVE
SOT-23
SOT-23
DBZ
DBZ
3
3
3000 RoHS & Green
3000 RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
15A1
15B1
Samples
Samples
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
3-Mar-2023
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Mar-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TMAG5115A1CQDBZR SOT-23
TMAG5115B1CQDBZR SOT-23
DBZ
DBZ
3
3
3000
3000
178.0
178.0
9.0
9.0
3.15
3.15
2.77
2.77
1.22
1.22
4.0
4.0
8.0
8.0
Q3
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Mar-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TMAG5115A1CQDBZR
TMAG5115B1CQDBZR
SOT-23
SOT-23
DBZ
DBZ
3
3
3000
3000
180.0
180.0
180.0
180.0
18.0
18.0
Pack Materials-Page 2
PACKAGE OUTLINE
DBZ0003A
SOT-23 - 1.12 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
2.64
2.10
1.12 MAX
1.4
1.2
B
A
0.1 C
PIN 1
INDEX AREA
1
0.95
(0.125)
3.04
2.80
1.9
3
(0.15)
NOTE 4
2
0.5
0.3
3X
0.10
0.01
(0.95)
TYP
0.2
C A B
0.25
GAGE PLANE
0.20
0.08
TYP
0.6
0.2
TYP
SEATING PLANE
0 -8 TYP
4214838/D 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC registration TO-236, except minimum foot length.
4. Support pin may differ or may not be present.
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EXAMPLE BOARD LAYOUT
DBZ0003A
SOT-23 - 1.12 mm max height
SMALL OUTLINE TRANSISTOR
PKG
3X (1.3)
1
3X (0.6)
SYMM
3
2X (0.95)
2
(R0.05) TYP
(2.1)
LAND PATTERN EXAMPLE
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214838/D 03/2023
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DBZ0003A
SOT-23 - 1.12 mm max height
SMALL OUTLINE TRANSISTOR
PKG
3X (1.3)
1
3X (0.6)
SYMM
3
2X(0.95)
2
(R0.05) TYP
(2.1)
SOLDER PASTE EXAMPLE
BASED ON 0.125 THICK STENCIL
SCALE:15X
4214838/D 03/2023
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
www.ti.com
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