TMC57253DSB [TI]
680- 】 500-pixel ccd image sensor; 680- 】 500像素的CCD图像传感器
| 型号： | TMC57253DSB |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 680- 】 500-pixel ccd image sensor |
| 文件： | 总15页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
DUAL-IN-LINE PACKAGE
(TOP VIEW)
Very High-Resolution, 1/3-in Solid-State
Image Sensor for NTSC Black and White
Applications
ODB 1
IAG2 2
SUB 3
12 IAG1
11 SAG
10 SAG
9 SUB
8 SRG
7 RST
340,000 Pixels per Field
Frame Memory
658 (H) × 496 (V) Active Elements in Image
Sensing Area Compatible With Electronic
Centerin
ADB 4
Multimode Readout Capability
– Progressive Scan
– Interlaced Scan
OUT1 5
OUT2 6
– Dual-Line Readout
– Image-Area Line Summing
– Smear Subtraction
Fast Single-Pulse Clear Capability
High Dynamic Range
High Sensitivity
Continuous Electronic Exposure Control
From 1/60 – 1/50,000 s
High Blue Response
7.4-µm Square Pixels
Solid-State Reliability With No Image
Burn-In, Residual Imaging, Image
Distortion, Image Lag, or
Microphonics
Advanced Lateral-Overflow-Drain
Antiblooming
Low Dark Current
description
The TC237 is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip
black and white NTSC TV, computer, and special-purpose applications requiring low cost and small size.
The image-sensing area of the TC237 is configured into 500 lines with 680 elements in each line. Twenty-two
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a
658(H) × 496(V) sensor with a very low dark current. One important feature of the TC237 very high-resolution
sensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image-
transfer capability. This capability allows for a continuous electronic exposure control without the loss of
sensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 20 µV per
electron by a high-performance structure with a reset and a voltage-reference generator. The signal is further
buffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability.
The TC237 is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices with
high blue response, low dark signal, good uniformity, and single-phase clocking. The TC237 is characterized
for operation from –10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to V . Under no
SS
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to V
SS
during operation to prevent
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
Copyright 1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
functional block diagram
3
SUB
1
ODB
Image Area With
12
11
Blooming Protection
IAG1
SAG
2
IAG2
Dark Reference Elements
Storage Area
10
9
SAG
SUB
SRG
4
Amplifiers
ADB
6
8
OUT2
4 Dummy Elements
5
OUT1
7
RST
Clearing Drain
sensor topology diagram
22 Dark Reference Pixels
658 Active Pixels
Two-Phase Image-Sensing Area
496 Lines
500 Lines
4 Dark Lines
Single-Phase Storage Area
4
22
658 Active Pixels
658 Active Pixels
Optical Black
(OPB)
Dummy Pixels
4
22
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
Terminal Functions
TERMINAL
NAME NO.
I/O
DESCRIPTION
ADB
IAG1
IAG2
ODB
OUT1
OUT2
RST
4
I
I
Supply voltage for amplifier-drain bias
Image-area gate 1
12
2
I
Image-area gate 2
1
I
Supply voltage overflow-drain antiblooming bias
Output signal 1
5
6
O
O
I
Output signal 2
7
Reset gate
SAG
SRG
SUB
10, 11
8
I
Storage-area gate
Serial-register gate
Substrate
I
3, 9
detailed description
The TC237 consists of four basic functional blocks: the image-sensing area, the image-storage area, the serial
register gates, and the low-noise signal processing amplifier block with charge-detection nodes and
independent resets. The location of each of these blocks is identified in the functional block diagram.
image-sensing and storage areas
Figure 1 and Figure 2 show cross sections with potential-well diagrams and top views of the image-sensing and
storage-area elements. As light enters the silicon in the image-sensing area, free electrons are generated and
collected in the wells of the sensing elements. Blooming protection is provided by applying a dc bias to the
overflow-drain bias pin. If it is necessary to clear the image before beginning a new integration time (for
implementation of electronic fixed shutter or electronic auto-iris), it is possible to do so by applying a pulse at
least 1 µs in duration to the overflow-drain bias. After integration is complete, the charge is transferred into the
storage area; the transfer timing is dependent on whether the readout mode is interlace or progressive scan.
If the progressive-scan readout mode is selected, the readout may be performed normally by utilizing one serial
register or high speed by using both serial registers (see Figure 3 through Figure 5). A line-summing operation
(which is useful in off-chip smear subtraction) may be implemented before the parallel transfer (see Figure 6
for line-summing timing).
There are 22 columns at the left edge of the image-sensing area that are shielded from incident light; these
elements provide the dark reference used in subsequent video-processing circuits to restore the video black
level. Therearealsofourdarklinesbetweentheimage-sensingandtheimage-storageareathatpreventcharge
leakage from the image-sensing area into the image-storage area.
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
7.4 µm
Clocked Barrier
Clocked Well
Virtual Barrier
3.8 µm
3.6 µm
Antiblooming
Device
Virtual Well
Channel Stops
Including Metal Bus Lines
Clocked Gate
1.6 µm
1.6 µm
Figure 1. Image-Area Pixel Structure
7.4 µm
Clocked Barrier
Clocked Well
Virtual Barrier
Virtual Well
3.5 µm
3.5 µm
Channel Stops
Including Metal Bus Lines
Clocked Gate
1.6 µm
1.6 µm
Figure 2. Storage-Area Pixel Structure
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
Clear
Integrate
Transfer to Memory
Readout
1 µs Minimum
ODB
†
†
†
IAG1, 2
250 Cycles
SAG
684 Pulses
684 Pulses
‡
SRG
RST
Expanded Section of
Parallel Transfer
IAG1, 2
SAG
SRG
Figure 3. Interlace Timing
†
‡
The number of parallel transfer pulses is field dependent. Field 1 has 500 pulses of IAG1, IAG2, SAG, and SRG with appropriate phasing. Field 2
has 501 pulses.
The readout is from register 2.
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
Clear
Integrate
Transfer to Memory
Readout
1 µs Minimum
ODB
500 Pulses
500 Pulses
500 Pulses
IAG1, 2
500 Cycles
SAG
†
684 Pulses
SRG
RST
684 Pulses
Expanded Section of
Parallel Transfer
IAG1, 2
SAG
SRG
†
The readout will be from register 2.
Figure 4. Progressive-Scan Timing With Single Register Readout
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
Clear
Integrate
Transfer to Memory
Readout
1 µs Minimum
ODB
500 Pulses
500 Pulses
500 Pulses
IAG1, 2
250 Cycles
SAG
684 Pulses
684 Pulses
SRG
RST
Expanded Section of
Parallel Transfer
IAG1, 2
SAG
SRG
Figure 5. Progressive-Scan Timing With Dual Register Readout
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
Clear
Integrate Line
Sum
Transfer to Memory
Readout
1 µs Minimum
ODB
IAG1
IAG2
¶
¶
¶
¶
†
‡
250 Cycles
SAG
684 Pulses
684 Pulses
§
SRG
RST
Expanded Section of
Parallel Transfer
IAG1, 2
SAG
SRG
Figure 6. Line-Summing Timing
†
‡
§
¶
This pulse occurs only during field 1.
This pulse occurs only during field 2.
While readout is from register 2, register 1 can be read out for off-chip smear subtraction.
The number of parallel transfer pulses if field dependent. field 1 has 500 pulses and field 2 has 501 pulses.
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
serial registers
The storage-area gate and serial gate(s) are used to transfer the charge line by line from the storage area into
the serial register(s). Depending on the readout mode, one or both serial registers is used. If both are used, the
registers are read out in parallel.
readout and video processing
After transfer into the serial register(s), the pixels are clocked out and sensed by a charge-detection node. The
node must be reset to a reference level before the next pixel is placed onto the detection node. The timing for
the serial-register readout, which includes the external pixel clamp and sample-and-hold signals needed to
implement correlated double sampling, is shown in Figure 7. As the charge is transferred onto the detection
node, the potential of this node changes in proportion to the amount of signal received. The change is sensed
byanMOStransistorand, afterproperbuffering, thesignalissuppliedtotheoutputterminaloftheimagesensor.
The buffer amplifier converts charge into a video signal. Figure 8 shows the circuit diagram of the
charge-detection node and output amplifier. The detection nodes and amplifiers are placed a short distance
awayfromtheedgeofthestoragearea;therefore, eachserialregistercontains4dummyelementsthatareused
to span the distance between the serial registers and the amplifiers.
SRG
RST
OUT
S/H
PCMP
Figure 7. Serial-Readout and Video-Processing Timing
V
REF
ADB
QR
Q1
Q2
Reset
CCD Channel
V
OUT
Figure 8. Output Amplifier and Charge-Detection Node
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
†
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, ADB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SUB to SUB + 15 V
Supply voltage range, ODB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SUB to SUB + 21 V
Input voltage range for ABG, IAG1, IAG2, SAG, SRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V
Operating free-air temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to 45°C
A
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°C
Operating case temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to 55°C
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to substrate terminal.
recommended operating conditions
MIN NOM
MAX
23
UNIT
Supply voltage for amplifier drain bias, ADB
Supply voltage for overflow-drain antiblooming bias, ODB
Substrate bias voltage
21
14
25
22
16
26
10
12
0
V
For antiblooming control
For clearing
17
V
V
27
High level
11.5
11.5
11.5
12.5
12.5
12.5
IAG1, IAG2
SAG
Low level
High level
Low level
High level
Low level
12
0
Input voltage, V
V
I
12
0
SRG, RST
IAG1, IAG2
SAG
25
25
12.5
Clock frequency, f
Capacitive load
MHz
clock
SRG, RST
OUT1, OUT2
6
pF
Operating free-air temperature, T
–10
45
°C
A
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
electrical characteristics over recommended operating range of supply voltage,
T = –10°C to 45°C
A
†
PARAMETER
With CDS
Without CDS
MIN
TYP
MAX
70
UNIT
dB
‡
69
58
20
Dynamic range (see Note 2)
‡
59
Charge conversion factor
µV/e
Charge-transfer efficiency (see Note 3)
Signal-response delay time, τ (see Note 4)
Gamma (see Note 5)
0.9999 0.99995
TBD
1
ns
1
500
12
Output resistance
300
8.5
30
400
10
Ω
‡
With CDS
Noise-equivalent signal
electrons
‡
Without CDS
36
42
ADB (see Note 6)
SRG (see Note 7)
ABG (see Note 8)
TBD
TBD
TBD
5
Rejection ratio
Supply current
dB
10
mA
IAG1, IAG2
SRG
2000
70
Input capacitance, C
pF
i
RST
10
SAG
4000
†
All typical values are at T = 25°C.
A
‡
CDS = Correlated double sampling, a signal-processing technique that improves noise performance by subtraction of reset noise.
NOTES: 2. Dynamic range is –20 times the logarithm of the mean noise signal divided by saturation output signal.
3. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using
an electrical input signal.
4. Signal-response delay time is the time between the falling edge of the SRG pulse and the output-signal valid state.
5. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this
value represents points near saturation).
Exposure (2)
Exposure (1)
Output signal (2)
Output signal (1)
6. ADB rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB.
7. SRG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG.
8. ABG rejection ratio is –20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
optical characteristics, T = 40°C, integration time = 16.67 ms (unless otherwise noted)
A
PARAMETER
MIN
TYP
256
32
MAX
UNIT
No IR filter
Sensitivity (see Note 9)
mV/lux
With IR filter
Saturation signal, V
(see Note 10)
Antiblooming disabled
Antiblooming enabled
390
180
1000
30K
mV
mV
sat
Maximum usable signal, V
use
Blooming overload ratio (see Note 11)
Image-area well capacity
Smear (see Note 12)
Dark current
22K
38K electrons
–78 dB
0.05 nA/cm
See Note 13
2
T
= 21°C
= 45°C
= 45°C
= 45°C
= 45°C
= 45°C
A
Dark signal
T
A
1
0.5
0.5
10
mV
mV
mV
mV
%
Dark-signal uniformity
Dark-signal shading
T
A
T
A
Dark
T
A
Spurious nonuniformity
Illuminated, F#8
T
A
15
Column uniformity
0.5
mV
s
Electronic-shutter capability
NOTES: 9. Theoretical value
1/50,000
1/60
10. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.
11. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio
is the ratio of blooming exposure to saturation exposure.
12. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is
equivalentto the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of theimage-area
vertical height with recommended clock frequencies.
13. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10
the height of the image section.
TYPICAL CHARACTERISTICS
0.50
0.40
0.30
0.20
0.10
0.00
16
14
12
10
8
6
4
.9
.8
.7
.6
.5
.4
.3
.2
.1
2
0
300 400 500 600 700 800 900 1000 1100
Wavelength (nm)
Figure 9. Spectral Characteristics of the TC237 CCD Sensor
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
V
S
V
SUB
0.1
TMC57253DSB
V
CC
1
2
24
23
22
21
20
19
18
17
16
15
14
13
15 V
VAB
VABM
ABOUT
VABL
GND
0.1
Oscillator
V
CC
User-Defined
Timer
1
7
14
8
3
GND V
CC
V
GND
CC
TC237
ODB IAG1
4
EN
1
2
3
4
5
6
12
11
10
9
1
2
3
4
5
6
12
11
10
9
5
GND CLK
CLKIN
PCMP
CLAMP
S/H
V
V
CC
ABIN
ABMIN
IA1IN
IA2IN
SAIN
SRIN
SRMIN
GND
IA1OUT
VI
CC
V
S
6
RST
IA1
IA2
SA
IAG2
SUB
ADB
SAG
SAG
SUB
7
IA2OUT
GND
8
9
8
8
†
CLEAR
GND
SAOUT
VS
OUT1 SRG
OUT2 RST
7
10
11
12
7
SR
SROUT
VSM
0.1
+
33
15
+
10 k
V
ADB
+
V
ODB
0.1
33
15
+
0.1
2N3904
100
ADB
0.1
OUT1
10 k
1 k
V
ODB
1 k
2N3904
10 k
2N3904
15
15
‡
CLR
+
+
V
ADB
22 pF
0.1
10 k
22 pF
100
2N3904
DC VOLTAGES
2N3904
V
V
V
V
12 V
5 V
S
OUT2
CC
SUB
10 V
22 V
22 V
1 k
All values are in Ω and µF unless otherwise noted.
ADB
V
ODB
†
‡
CLEAR is active-low TTL.
CLR is nominally 18 VDC with a 10-V pulse for image clear.
Figure 10. Typical Application Circuit Diagram
SUPPORT CIRCUIT
DEVICE
PACKAGE
24-pin surface
APPLICATION
FUNCTION
Driver for IAG1, 2, SAG, SRG, and RST
TMC57253DSB
Driver
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TC237
680- × 500-PIXEL CCD IMAGE SENSOR
SOCS044B – JUNE 1994 – REVISED JUNE 1996
MECHANICAL DATA
The package for the TC237 consists of a ceramic base, a glass window, and a 12-lead frame. The glass window is
sealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization and
fit into mounting holes with 1,78 mm center-to-center spacings.
TC237 (12 pin)
5,99
Index
5,59
Mark
1,91
1,65
4,50
4,10
12,40
12,00
11,70
11,50
Optical
Center
Package
Center
0,51
0,41
11,50
11,10
1,78
0,76
0,50
3,90
10,90
10,70
3,298
2,798
Focus Plane
2,08
1,48
0,33
0,17
3,998
3,398
11,68
11,18
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS
04/95
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Copyright 1998, Texas Instruments Incorporated
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