TPD1E04U04DPYT [TI]

适用于 HDMI 2.0 和 USB 3.0 且采用 0402 和 0201 封装的 0.5pF、3.6V、±16kV ESD 保护二极管 | DPY | 2 | -40 to 125;
TPD1E04U04DPYT
型号: TPD1E04U04DPYT
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

适用于 HDMI 2.0 和 USB 3.0 且采用 0402 和 0201 封装的 0.5pF、3.6V、±16kV ESD 保护二极管 | DPY | 2 | -40 to 125

二极管
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TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
TPD1E04U04 适用于 HDMI 2.0 USB 3.0 的低 RDYN 单通道 ESD 保护二  
极管  
1 特性  
3 说明  
1
IEC 61000-4-2 4 级静电放电 (ESD) 保护  
TPD1E04U04 是一款单向 TVS ESD 保护二极管,用  
于为 HDMI 2.0 USB 3.0 电路提供保护。  
±16kV 接触放电  
±16kV 气隙放电  
TPD1E04U04 的额定 ESD 冲击消散值高于 IEC  
61000-4-24 级)国际标准中规定的最高水平。  
IEC 61000-4-4 瞬态放电 (EFT) 保护  
80A (5/50ns)  
IEC 61000-4-5 浪涌保护  
2.5A (8/20µs)  
该器件 特有 一个 0.5pF IO 电容,适合于保护速率高  
6Gbps 的高速接口,例如 HDMI 2.0 USB 3.0 接  
口。低动态电阻和超低钳位电压可为敏感的 SoC 提供  
针对瞬变事件的系统级保护。  
IO 电容:0.5pF(典型值)、0.65pF(最大值)  
超低 ESD 钳位电压  
TPD1E04U04 采用符合行业标准的 0402 (DPY) 封  
装。  
16A TLP 时为 8.9V  
-16A TLP 时为 -4.6V  
器件信息(1)  
RDYN  
IO GND 之间为 0.25Ω  
GND IO 之间为 0.18Ω  
器件型号  
封装  
X1SON (2)  
封装尺寸(标称值)  
TPD1E04U04  
0.6mm x 1.00mm  
直流击穿电压:5V(最小值)  
超低泄漏电流:10nA(最大值)  
支持速率最高达 6Gbps 的高速接口  
工业温度范围:-40°C +125°C  
符合行业标准的 0402 封装  
(1) 要了解所有可用封装,请参见数据表末尾的可订购产品附录。  
典型的 HDMI 2.0 应用  
TMDS_D2+  
TMDS_D2-  
TMDS_D1+  
TMDS_D1-  
TMDS_D0+  
TMDS_D0-  
TMDS_CK+  
TMDS_CK-  
CEC  
2 应用  
终端设备  
机顶盒  
便携式计算机和台式机  
电视和监视器  
手机和平板电脑  
UTILITY  
DDC_CLK  
DDC_DAT  
HOTPLUG_DET  
数字视频录像机 (DVR) 和网络视频录像机  
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
(NVR)  
接口  
TPD1E04U04 (x8)  
GND  
TPD1E05U06 (x5)  
Copyright © 2016, Texas Instruments Incorporated  
HDMI 2.0  
HDMI 1.4b  
USB 3.0  
DisplayPort 1.2  
PCI Express 3.0  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
English Data Sheet: SLVSDG4  
 
 
 
TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
目录  
7.3 Feature Description................................................... 9  
7.4 Device Functional Modes........................................ 10  
Application and Implementation ........................ 11  
8.1 Application Information............................................ 11  
8.2 Typical Application ................................................. 11  
Power Supply Recommendations...................... 13  
1
2
3
4
5
6
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
6.1 Absolute Maximum Ratings ...................................... 4  
6.2 ESD Ratings ............................................................ 4  
6.3 ESD Ratings—IEC Specification ............................. 4  
6.4 Recommended Operating Conditions....................... 4  
6.5 Thermal Information.................................................. 4  
6.6 Electrical Characteristics........................................... 5  
6.7 Typical Characteristics.............................................. 6  
Detailed Description .............................................. 9  
7.1 Overview ................................................................... 9  
7.2 Functional Block Diagram ......................................... 9  
8
9
10 Layout................................................................... 13  
10.1 Layout Guidelines ................................................. 13  
10.2 Layout Example .................................................... 14  
11 器件和文档支持 ..................................................... 15  
11.1 文档支持 ............................................................... 15  
11.2 社区资源................................................................ 15  
11.3 ....................................................................... 15  
11.4 静电放电警告......................................................... 15  
11.5 Glossary................................................................ 15  
12 机械、封装和可订购信息....................................... 16  
7
4 修订历史记录  
Changes from Original (March 2016) to Revision A  
Page  
已将器件状态从产品预览更改为量产数据 .............................................................................................................................. 1  
2
版权 © 2016, Texas Instruments Incorporated  
 
TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
5 Pin Configuration and Functions  
DPY Package  
2-Pin X1SON  
Top View  
1
2
Pin Functions  
PIN  
TYPE  
DESCRIPTION  
NO.  
NAME  
IO  
1
2
I/O  
ESD Protected Channel  
GND  
Ground  
Ground. Connect to ground  
Copyright © 2016, Texas Instruments Incorporated  
3
TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
6 Specifications  
6.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
MAX  
80  
UNIT  
A
Electrical fast transient  
Peak pulse  
IEC 61000-4-4 (5/50 ns)  
IEC 61000-4-5 power (tp - 8/20 µs)  
IEC 61000-4-5 current (tp - 8/20 µs)  
Operating free-air temperature  
Storage temperature  
19  
W
2.5  
A
TA  
–40  
–65  
125  
155  
°C  
°C  
Tstg  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
6.2 ESD Ratings  
VALUE  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
±2500  
V(ESD)  
Electrostatic discharge  
V
Charged-device model (CDM), per JEDEC specification JESD22-  
C101(2)  
±1000  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
6.3 ESD Ratings—IEC Specification  
VALUE  
UNIT  
IEC 61000-4-2 contact discharge  
IEC 61000-4-2 air-gap discharge  
±16000  
±16000  
V(ESD)  
Electrostatic discharge  
V
6.4 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
0
MAX  
3.6  
UNIT  
VIO  
TA  
Input pin voltage  
V
Operating free-air temperature  
–40  
125  
°C  
6.5 Thermal Information  
TPD1E04U04  
THERMAL METRIC(1)  
DPY (X1SON)  
2 PINS  
683.6  
UNIT  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
494.2  
568.7  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
217.4  
ψJB  
568.7  
RθJC(bot)  
n/a  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
4
Copyright © 2016, Texas Instruments Incorporated  
TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
6.6 Electrical Characteristics  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
3.6  
UNIT  
VRWM  
VBR  
VF  
Reverse stand-off voltage  
Breakdown voltage, IO pin to GND  
IIO < 10 nA  
TA = 25°C(1)  
V
V
V
5
6.2  
0.8  
7.5  
Forward diode voltage, GND to IO  
pin  
IIO = 1 mA, TA = 25°C  
VHOLD  
Holding voltage  
IIO = 1 mA  
5.3  
5.3  
V
V
VCLAMP  
Clamping voltage  
IPP = 1 A, TLP, from IO to GND  
IPP = 16 A, TLP, from IO to GND  
IPP = 1 A, TLP, from GND to IO  
IPP = 16 A, TLP, from GND to IO  
VIO = 2.5 V  
8.9  
1.3  
4.6  
ILEAK  
RDYN  
Leakage current, any IO to GND  
Dynamic resistance  
0.1  
10  
nA  
IO to GND  
0.25  
0.18  
0.5  
Ω
GND to IO  
CL  
Line capacitance  
VIO = 0 V, f = 1 MHz, IO to GND, TA  
= 25°C  
0.65  
pF  
(1) Measured as the maximum voltage before device snaps back into VHOLD voltage.  
Copyright © 2016, Texas Instruments Incorporated  
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TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
6.7 Typical Characteristics  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
0
0
-5  
-5  
0
2
4
6
8
10  
12  
14  
0
1
2
3
4
5
6
7
8
Voltage (V)  
Voltage (V)  
D012  
D014  
Figure 1. Positive TLP Curve  
Figure 2. Negative TLP Curve  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
5
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
0
-5  
-10  
-10  
0
10 20 30 40 50 60 70 80 90 100  
Time (ns)  
-10  
0
10 20 30 40 50 60 70 80 90 100  
Time (ns)  
D006  
D007  
Figure 3. 8-kV IEC Waveform  
Figure 4. –8-kV IEC Waveform  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
20  
18  
16  
14  
12  
10  
8
3
Power  
Current  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0
6
4
-40èC  
25èC  
125èC  
2
0
-5  
0
5
10 15 20 25 30 35 40 45 50 55  
Time (µs)  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
3.6  
Voltage Bias (V)  
D010  
D011  
Figure 5. Surge Curve (tp = 8/20µs), IO Pin to GND  
Figure 6. Capacitance vs. Bias Voltage  
6
Copyright © 2016, Texas Instruments Incorporated  
TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
Typical Characteristics (continued)  
1000  
1
0.8  
0.6  
0.4  
0.2  
0
800  
600  
400  
200  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
-1  
0
1
2
3
4
5
6
Temperature (èC)  
Voltage (V)  
D017  
D009  
Figure 7. Leakage Current vs. Temperature  
Figure 8. DC Voltage Sweep I-V Curve  
1
0
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
VBIAS = 0 V  
VBIAS = 1.8 V  
VBIAS = 3.3 V  
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
-11  
-12  
1G  
2G  
3G  
4G  
5G  
6G  
7G  
8G  
9G 10G  
50M 100M  
1G  
10G  
Frequency (Hz)  
Frequency (Hz)  
D016  
D008  
Figure 9. Capacitance vs. Frequency  
Figure 10. Insertion Loss  
Figure 11. HDMI2.0 6-Gbps TP2 Eye Diagram (Bare Board)  
Copyright © 2016, Texas Instruments Incorporated  
7
TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
Typical Characteristics (continued)  
Figure 12. HDMI2.0 6-Gbps TP2 Eye Diagram (with TPD1E04U04)  
8
Copyright © 2016, Texas Instruments Incorporated  
TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
7 Detailed Description  
7.1 Overview  
The TPD1E04U04 is a unidirectional ESD Protection Diode with ultra-low capacitance designed for HDMI 2.0  
and USB 3.0. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2  
International Standard. The extremely low clamping voltage and low RDYN make this device ideal for supporting  
the next-generation small feature size SoCs. The low capacitance also makes this device ideal for protecting any  
high-speed signal pins on these sensitive interface pins.  
7.2 Functional Block Diagram  
I/O  
GND  
Copyright © 2016, Texas Instruments Incorporated  
7.3 Feature Description  
7.3.1 IEC 61000-4-2 ESD Protection  
The IO pins can withstand ESD events up to ±16-kV contact and ±16-kV air gap. An ESD-surge clamp diverts  
the current to ground.  
7.3.2 IEC 61000-4-4 EFT Protection  
The IO pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-  
impedance). An ESD-surge clamp diverts the current to ground.  
7.3.3 IEC 61000-4-5 Surge Protection  
The IO pins can withstand surge events up to 2.5 A and 19 W (8/20 µs waveform). An ESD-surge clamp diverts  
this current to ground.  
7.3.4 IO Capacitance  
The capacitance between each IO pin to ground is 0.5-pF (typical) and 0.65-pF (maximum). This device supports  
data rates up to 6 Gbps.  
7.3.5 Ultra-Low ESD Clamping Voltage  
The IO pins feature an ESD clamp that is capable of clamping the voltage to 8.9 V (ITLP = 16 A) and –4.6 V (ITLP  
= –16 A).  
7.3.6 Low RDYN  
The IO pins feature an ESD clamp that has an extremely low RDYN of 0.25 Ω (IO to GND) and 0.18 Ω (GND to  
IO) which prevents system damage during ESD events.  
Copyright © 2016, Texas Instruments Incorporated  
9
TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
Feature Description (continued)  
7.3.7 DC Breakdown Voltage  
The DC breakdown voltage of each IO pin is a minimum of 5 V. This ensures that sensitive equipment is  
protected from surges above the reverse standoff voltage of 3.6 V.  
7.3.8 Ultra Low Leakage Current  
The IO pins feature an ultra-low leakage current of 10 nA (maximum) with a bias of 2.5 V  
7.3.9 Supports High Speed Interfaces  
This device is capable of supporting high speed interfaces up to 6 Gbps, because of the very low IO capacitance.  
7.3.10 Industrial Temperature Range  
This device features an industrial operating range of –40°C to +125°C.  
7.3.11 Easy Flow-Through Routing Package  
The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers  
flow-through routing, requiring minimal modification to an existing layout.  
7.4 Device Functional Modes  
The TPD1E04U04 is a passive integrated circuit that triggers when voltages are above VBR or below VF. During  
ESD events, voltages as high as ±16-kV (air) can be directed to ground via the internal diode network. When the  
voltages on the protected line fall below the trigger levels of TPD1E04U04 (usually within 10s of nano-seconds)  
the device reverts to passive.  
10  
Copyright © 2016, Texas Instruments Incorporated  
TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
8 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
8.1 Application Information  
The TPD1E04U04 is a diode type TVS which is used to provide a path to ground for dissipating ESD events on  
high-speed signal lines between a human interface connector and a system. As the current from ESD passes  
through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the  
protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.  
8.2 Typical Application  
TMDS_D2+  
TMDS_D2-  
TMDS_D1+  
TMDS_D1-  
TMDS_D0+  
TMDS_D0-  
TMDS_CK+  
TMDS_CK-  
CEC  
UTILITY  
DDC_CLK  
DDC_DAT  
HOTPLUG_DET  
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
1
2
TPD1E04U04 (x8)  
GND  
TPD1E05U06 (x5)  
Copyright © 2016, Texas Instruments Incorporated  
Figure 13. HDMI 2.0 ESD Schematic  
8.2.1 Design Requirements  
For this design example eight TPD1E04U04 devices and five TPD1E05U06 devices are being used in a HDMI  
2.0 application. This provides a complete ESD protection scheme.  
Given the HDMI 2.0 application, the parameters listed in Table 1 are known.  
Table 1. Design Parameters  
DESIGN PARAMETER  
Signal Range on TMDS Lines  
Operating Frequency on TMDS Lines  
Signal Range on Control Lines  
VALUE  
0 V to 3.6 V  
up to 3 GHz  
0 V to 5.5 V  
Copyright © 2016, Texas Instruments Incorporated  
11  
 
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8.2.2 Detailed Design Procedure  
8.2.2.1 Signal Range  
The TPD1E04U04 supports signal ranges between 0 V and 3.6 V, which supports the TMDS pairs on the HDMI  
2.0 application. The TPD1E05U06 supports signal ranges between 0 V and 5.5 V, which supports the control  
lines.  
8.2.2.2 Operating Frequency  
The TPD1E04U04 has a 0.5-pF (typcal) capacitance, which supports the HDMI 2.0 data rates of 6-Gbps. The  
TPD1E05U06 has a 0.5-pF (typical) capacitance as well, which easily supports the control line data rates.  
8.2.3 Application Curves  
Figure 14. HDMI2.0 6-Gbps TP2 Eye Diagram (Bare Board)  
Figure 15. HDMI2.0 6-Gbps TP2 Eye Diagram  
(with TPD1E04U04)  
12  
Copyright © 2016, Texas Instruments Incorporated  
TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
9 Power Supply Recommendations  
This device is a passive ESD device so there is no need to power it. Take care not to violate the recommended  
IO specification (0 V to 3.6 V) to ensure the device functions properly.  
10 Layout  
10.1 Layout Guidelines  
The optimum placement is as close to the connector as possible.  
EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,  
resulting in early system failures.  
The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away  
from the protected traces which are between the TVS and the connector.  
Route the protected traces as straight as possible.  
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded  
corners with the largest radii possible.  
Electric fields tend to build up on corners, increasing EMI coupling.  
版权 © 2016, Texas Instruments Incorporated  
13  
TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
10.2 Layout Example  
[egend  
Çop [ꢂyer  
Çt51904Ü04 (x8)  
Db5  
ëL! ꢁo Db5 tlꢂne  
Ça5{_52+  
Db5  
Ça5{_52+  
Ça5{_52-  
Ça5{_52-  
Ça5{_51+  
Db5  
Db5  
Db5  
Db5  
Db5  
Db5  
Db5  
Ça5{_51+  
Ça5{_51-  
Ça5{_51-  
Ça5{_50+  
Db5  
Ça5{_50+  
Ça5{_50-  
Ça5{_50-  
Ça5{_/Y+  
Db5  
Ça5{_/Y+  
Ça5{_/Y-  
Ça5{_/Y-  
/9/  
/9/  
ÜÇL[LÇò  
ÜÇL[LÇò  
55/_/[Y  
55/_5!Ç  
Db5  
55/_/[Y  
55/_5!Ç  
ꢀë_hÜÇ  
IhÇt[ÜD_59Ç  
ꢀë_{Ütt[ò  
IhÇt[ÜD_59Ç  
Db5  
Çt5190ꢀÜ06 (xꢀ)  
Figure 16. HDMI2.0 Type-A Transmitter Port ESD Layout  
14  
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TPD1E04U04  
www.ti.com.cn  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
11 器件和文档支持  
11.1 文档支持  
11.1.1 相关文档ꢀ  
相关文档请参见以下部分:  
TPD1E04U04 评估模块用户指南》SLVUAN8  
11.2 社区资源  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
11.3 商标  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
11.4 静电放电警告  
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可  
能会损坏集成电路。  
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可  
能会导致器件与其发布的规格不相符。  
11.5 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
版权 © 2016, Texas Instruments Incorporated  
15  
TPD1E04U04  
ZHCSF81A MARCH 2016REVISED APRIL 2016  
www.ti.com.cn  
12 机械、封装和可订购信息  
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对  
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本,请查阅左侧的导航栏  
16  
版权 © 2016, Texas Instruments Incorporated  
PACKAGE OPTION ADDENDUM  
www.ti.com  
1-Jul-2023  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TPD1E04U04DPLR  
TPD1E04U04DPLT  
TPD1E04U04DPYR  
TPD1E04U04DPYT  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
X2SON  
X2SON  
X1SON  
X1SON  
DPL  
DPL  
DPY  
DPY  
2
2
2
2
15000 RoHS & Green  
250 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
K
Samples  
Samples  
Samples  
Samples  
NIPDAU  
K
10000 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM  
250 RoHS & Green NIPDAU Level-1-260C-UNLIM  
3K  
3K  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
1-Jul-2023  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
28-Jun-2023  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPD1E04U04DPLR  
TPD1E04U04DPLR  
TPD1E04U04DPLT  
TPD1E04U04DPLT  
TPD1E04U04DPYR  
TPD1E04U04DPYT  
TPD1E04U04DPYT  
X2SON  
X2SON  
X2SON  
X2SON  
X1SON  
X1SON  
X1SON  
DPL  
DPL  
DPL  
DPL  
DPY  
DPY  
DPY  
2
2
2
2
2
2
2
15000  
15000  
250  
178.0  
178.0  
178.0  
178.0  
180.0  
180.0  
180.0  
8.4  
9.5  
9.5  
8.4  
9.5  
9.5  
8.4  
0.36  
0.39  
0.39  
0.36  
0.66  
0.66  
0.07  
0.66  
0.68  
0.68  
0.66  
1.15  
1.15  
1.1  
0.33  
0.38  
0.38  
0.33  
0.66  
0.66  
0.47  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
250  
10000  
250  
250  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
28-Jun-2023  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPD1E04U04DPLR  
TPD1E04U04DPLR  
TPD1E04U04DPLT  
TPD1E04U04DPLT  
TPD1E04U04DPYR  
TPD1E04U04DPYT  
TPD1E04U04DPYT  
X2SON  
X2SON  
X2SON  
X2SON  
X1SON  
X1SON  
X1SON  
DPL  
DPL  
DPL  
DPL  
DPY  
DPY  
DPY  
2
2
2
2
2
2
2
15000  
15000  
250  
205.0  
184.0  
184.0  
205.0  
184.0  
184.0  
203.2  
200.0  
184.0  
184.0  
200.0  
184.0  
184.0  
196.8  
33.0  
19.0  
19.0  
33.0  
19.0  
19.0  
33.3  
250  
10000  
250  
250  
Pack Materials-Page 2  
PACKAGE OUTLINE  
DPY0002A  
X1SON - 0.45 mm max height  
S
C
A
L
E
1
1
.
0
0
0
PLASTIC SMALL OUTLINE - NO LEAD  
1.1  
0.9  
B
A
PIN 1 INDEX AREA  
0.7  
0.5  
0.45  
0.30  
C
SEATING PLANE  
0.08 C  
0.05  
0.00  
0.65  
1
2
SYMM  
0.55  
0.45  
2X  
0.1  
C A B  
SYMM  
0.3  
0.2  
2X  
0.05  
C A B  
4224561/B 03/2021  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M  
2. This drawing is subject to change without notice.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DPY0002A  
X1SON - 0.45 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
2X (0.3)  
SYMM  
1
2
SYMM  
2X (0.5)  
(R0.05) TYP  
(0.7)  
LAND PATTERN EXAMPLE  
EXPOSED METAL SHOWN  
SCALE:60X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
METAL EDGE  
METAL UNDER  
SOLDER MASK  
EXPOSED  
METAL  
EXPOSED  
METAL  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
SOLDER MASK  
DEFINED  
(PREFERRED)  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4224561/B 03/2021  
NOTES: (continued)  
3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).  
4. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view.  
It is recommended that vias under paste be filled, plugged or tented.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DPY0002A  
X1SON - 0.45 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
(0)  
2X (0.3)  
2X (0.5)  
SYMM  
PCB PAD METAL  
UNDER SOLDER PASTE  
SYMM  
2
1
(R0.05) TYP  
(0.7)  
SOLDER PASTE EXAMPLE  
BASED ON 0.1 mm THICK STENCIL  
SCALE:60X  
4224561/B 03/2021  
NOTES: (continued)  
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担  
保。  
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。  
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。  
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成  
本、损失和债务,TI 对此概不负责。  
TI 提供的产品受 TI 的销售条款ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改  
TI 针对 TI 产品发布的适用的担保或担保免责声明。  
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE  
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2023,德州仪器 (TI) 公司  

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