TPIC2701_12 [TI]
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY;
| 型号： | TPIC2701_12 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY |
| 文件： | 总15页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
TPIC2701
N PACKAGE
(TOP VIEW)
Seven 0.5-A Independent Output Channels
Integrated Clamp Diode With Each Output
Low r . . . 0.5 Ω Typical
DS(on)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
DRAIN1
DRAIN2
DRAIN3
DRAIN4
DRAIN5
DRAIN6
DRAIN7
CLAMP
GATE1
GATE2
GATE3
GATE4
GATE5
GATE6
GATE7
SOURCE
Output Voltage . . . 60 V
Pulsed Current . . . 3 A Per Channel
Avalanche Energy . . . 22 mJ
description
The TPIC2701 is a monolithic power DMOS
transistor array that consists of seven indepen-
dent N-channel enhancement-mode DMOS
transistors connected in a common-source
configuration with open drains. The TPIC2701 is
pin-for-pin functionally compatible with the Texas
Instruments ULN2001A through ULN2004A.
TPIC2701M
J PACKAGE
(TOP VIEW)
†
The TPIC2701 is characterized for operation over
a temperature range of 0°C to 125°C.The
TPIC2701M is characterized for operation over
the full military temperature range of –55°C to
125°C.
GATE1
GATE2
GATE3
NC
DRAIN1
DRAIN2
DRAIN3
NC
1
24
23
22
21
20
2
3
4
NC
NC
5
GATE4
GATE5
NC
6
19 DRAIN4
logic diagram
7
18
17
16
15
14
13
DRAIN5
NC
9
8
CLAMP
DRAIN1
9
GATE6
GATE7
SOURCE
SOURCE
DRAIN6
DRAIN7
CLAMP
SOURCE
1
16
GATE1
10
11
12
2
3
15
14
GATE2
GATE3
DRAIN2
DRAIN3
NC – No internal connection
Refer to the mechanical data for the JW package.
†
4
13
GATE4
DRAIN4
5
6
12
11
GATE5
GATE6
DRAIN5
DRAIN6
7
10
GATE7
DRAIN7
8
SOURCE
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1996, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-source voltage, V
Gate-source voltage, V
Clamp-drain voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
DS
GS
CD
Continuous source-drain diode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 A
Pulsed drain current, each output, I (see Note 1 and Figure 17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
D
Pulsed clamp current, I (see Note 1 and Figure 18) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
CL
Continuous drain current, each output, all outputs on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 A
Single-pulse avalanche energy, E (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 mJ
AS
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, T :TPIC2701 . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 150°C
J
TPIC2701M . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C
Operating case temperature range, T TPIC2701 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
C:
TPIC2701M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C
Storage temperature range, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: N Package . . . . . . . . . . . . . . . . . . . . . 260°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: J Package . . . . . . . . . . . . . . . . . . . . . 300°C
NOTE 1: Pulse duration = 10 ms, duty cycle = 6%.
DISSIPATION RATING TABLE
T
≤ 25°C
DERATING FACTOR
T
= 70°C
T
= 85°C
T = 125°C
A
A
A
A
PACKAGE
POWER RATING
ABOVE T = 25°C
POWER RATING POWER RATING POWER RATING
A
J
2660 mW
21.3 mW/°C
11.0 mW/°C
1701 mW
905 mW
1382 mW
740 mW
530 mW
300 mW
N
1400 mW
electrical characteristics, T = 25°C (unless otherwise noted)
C
TPIC2701
TYP
PARAMETER
TEST CONDITIONS
UNIT
MIN
60
MAX
V
V
Drain-source breakdown voltage
Gate-source threshold voltage
I
I
I
= 1 µA,
= 1 mA,
= 0.5 A,
V
V
V
= 0
= V
V
V
(BR)DS
D
D
D
GS
DS
GS
1.2
1.75
0.25
2.4
0.4
TGS
GS
= 15 V,
V
Drain-source on-state voltage
Zero-gate-voltage drain current
V
DS(on)
See Notes 2 and 3
T
T
= 25°C
0.05
0.5
1
C
I
V
V
= 48 V,
= 20 V,
V
= 0
µA
DSS
DS
GS
= 125°C
10
C
Forward gate current, drain short circuited to
source
I
I
V
= 0
= 0
10
10
100
100
nA
nA
GSSF
GS
DS
DS
Reverse gate current, drain short circuited to
source
V
V
= –20 V, V
GSSR
GS
= 15 V,
See Notes 2 and 3 and
Figures 5 and 6
I = 0.5 A,
D
T
T
= 25°C
0.5
0.8
0.8
1.3
GS
C
r
Forward drain-source on-state resistance
Ω
DS(on)
= 125°C
C
V
= 15 V,
I = 0.5 A,
D
DS
See Notes 2 and 3
g
Forward transconductance
0.5
0.8
S
fs
C
C
Short-circuit input capacitance, common source
Short-circuit output capacitance, common source
105
65
iss
oss
V
DS
= 25 V,
V
GS
= 0,
f = 300 kHz
pF
Short-circuit reverse transfer capacitance,
common source
C
15
rss
NOTES: 2. Technique should limit T – T to 10°C maximum.
J
C
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts with a single output
transistor conducting.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
electrical characteristics over case temperature operating range (unless otherwise noted)
(see Note 4)
TPIC2701M
†
PARAMETER
TEST CONDITIONS
T
C
UNIT
MIN
TYP
MAX
I
I
I
= 1 µA,
= 1 mA,
= 1 mA,
V
V
V
= 0
= 0
= V
25°C
Full range
Full range
25°C
D
D
D
GS
GS
DS
V
V
V
Drain-to-source breakdown voltage
Gate-to-source input threshold voltage
Drain-to-source on-state voltage
60
V
V
V
(BR)DS
1.2
1.75
0.25
2.4
0.45
0.65
1
TGS
GS
I
D
= 0.5 A,
V
GS
V
GS
V
DS
DS
= 15 V
= 0
DS(on)
Full range
25°C
0.05
10
I
I
I
Zero-gate-voltage drain current
V
V
V
= 48 V,
= 20 V,
µA
DSS
DS
GS
GS
Full range
25°C
10
100
10
nA
µA
nA
µA
Forward gate current, drain short-circuited to
source
= 0
GSSF
GSSR
Full range
25°C
10
100
10
Reverse gate current, drain short-circuited to
source
= –20 V, V
= 0
Full range
25°C
0.5
0.9
1.3
r
Forward drain-source on-state resistance
V
V
= 15 V,
= 15 V,
I
I
= 0.5 A
Ω
DS(on)
GS
D
Full range
25°C
g
Forward transconductance
= 0.5 A
0.8
105
65
S
fs
DS
D
C
C
Short-circuit input capacitance, common source
Short-circuit output capacitance, common source
iss
V
= 25 V,
V
= 0,
GS
oss
DS
Full range
pF
f = 300 kHz
Short-circuit reverse transfer capacitance,
common source
C
15
rss
†
Full range is –55°C to 125°C.
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
source-drain diode characteristics, T = 25°C
C
TPIC2701
TYP
PARAMETER
TEST CONDITIONS
UNIT
MIN
MAX
V
t
Forward On voltage
I
I
= 0.5 A,
= 0.5 A,
V
V
= 0
0.9
1.4
V
SD
S
GS
Reverse-recovery time
Total source-drain diode charge
165
ns
nC
= 0,
V
= 48 V,
rr(SD)
S
GS
DS
See Figure 1
di/dt = 25 A/µs,
Q
250
RR
source-to-drain diode characteristics over operating case temperature range (unless otherwise
noted) (see Note 4)
TPIC2701M
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
0.9
MAX
V
t
Forward On voltage
I
I
= 0.5 A,
= 0.5 A,
V
V
= 0
1.4
V
SD
S
GS
Reverse recovery time
165
250
ns
nC
= 0,
V
DS
= 48 V,
rr
S
GS
di/dt = 25 A/µs,
T = 25°C, See Figure 1
C
Q
Total source-to-drain diode charge
RR
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
clamp diode characteristics, T = 25°C
C
TPIC2701
PARAMETER
TEST CONDITIONS
= 0.5 A
UNIT
MIN
TYP
MAX
V
V
Forward on-voltage
I
I
1
1.5
V
V
F
F
Breakdown voltage
= 1 µA
60
BR
R
I
t
Reverse leakage current
Reverse-recovery time
Total source-drain diode charge
V
= 48 V
R
0.05
90
1
µA
ns
nC
R
I
V
= 0.1 A,
= 48 V, See Figure 1
di/dt = 25 A/µs,
rr(CD)
F
CD
Q
100
RR
clamp diode characteristics over operating case temperature range (unless otherwise noted)
(see Note 4)
TPIC2701M
PARAMETER
Forward voltage
TEST CONDITIONS
UNIT
V
MIN
TYP
MAX
V
V
I
I
I
= 0.5 A
= 1 µA,
= 1 mA
1
1.5
F
F
T
T
= 25°C
= 25°C
R
R
C
Breakdown voltage
60
V
(BR)
0.05
1
C
I
t
Reverse leakage current
V
= 48 V
R
µA
R
10
Reverse recovery time, source-to-drain
Total source-to-drain diode charge
90
ns
I
V
= 0.1 A,
di/dt = 25 A/µs,
T = 25°C
C
rr(SD)
F
= 48 V, See Figure 1
CD
Q
100
nC
RR
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
resistive-load switching characteristics, T = 25°C
C
TPIC2701
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
10
MAX
t
t
t
t
Turn-on delay time
d(on)
Turn-off delay time
Rise time
30
d(off)
V
t
= 25 V,
R
= 100 Ω,
t
en
= 10 ns,
DD
= 10 ns,
L
ns
See Figure 2
15
dis
r
f
Fall time
5
Q
Q
Q
Total gate charge
Gate-source charge
Gate-drain charge
2.8
1.6
1.2
3.6
2
g
V
= 48 V,
I
D
= 0.25 A,
V
GS
= 10 V,
DS
See Figure 3
nC
gs
gd
1.6
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
resistive-load switching characteristics over operating case temperature range (unless otherwise
noted) (see Note 4)
TPIC2701M
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
10
MAX
t
t
t
t
Turn-on delay time
d(on)
Turn-off delay time
Rise time
30
d(off)
V
t
= 25 V,
R
= 100 Ω,
t
en
= 10 ns,
DD
= 10 ns,
L
ns
See Figure 2
15
dis
r
f
Fall time
5
Q
Q
Q
Total gate charge
Gate-to-source charge
2.8
1.6
g
V
= 48 V,
I
D
= 0.25 A,
V
GS
= 10 V,
DS
See Figure 3
nC
gs
gd
Gate-to-drain charge
1.2
NOTE 4: Pulse testing techniques are used to maintain the virtual junction temperature as close to the case temperature as possible. Thermal
effects must be taken into account separately.
thermal resistance
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
90
UNIT
N package with all outputs at equal power
J package with all outputs at equal power
R
Junction-to-ambient thermal resistance
°C/W
θJA
66
PARAMETER MEASUREMENT INFORMATION
0.5 A
I /I
F S
Q
= Shaded Area
RR
di/dt = 25 A/µs
0
25% of I
RM
I
RM
(see Note A)
t
rr
NOTE A: I
RM
= maximum recovery current
Figure 1. Reverse-Recovery-Current Waveforms of Source-Drain and Clamp Diodes
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
PARAMETER MEASUREMENT INFORMATION
25 V
t
en
t
dis
90%
10%
R
L
15 V
90%
V
V
DS
GS
Pulse Generator
0
t
V
GS
DUT
R
50 Ω
d(off)
gen
t
d(on)
V
DD
90%
50 Ω
V
DS
10%
V
DS(on)
t
f
t
r
VOLTAGE WAVEFORM
TEST CIRCUIT
Figure 2. Resistive Switching
Current
Regulator
Q
g
Same Type
as DUT
10 V
12-V
Battery
0.2 µF
50 kΩ
Q
gd
0.3 µF
V
GS
V
DD
= 48 V
Gate Voltage
Time
DUT
I
G
= 100 µA
0
Q
= Q – Q
g gd
gs
I
Current-
I Current-
D
Sampling Resistor
G
WAVEFORM
Sampling Resistor
TEST CIRCUIT
Figure 3. Gate Charge Test Circuit and Waveform
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
PARAMETER MEASUREMENT INFORMATION
25 V
t
av
t
w
4 mH
15 V
0
V
GS
V
DS
Pulse Generator
(see Note A)
I
D
I
AS
V
GS
(see Note B)
I
D
DUT
0
R
50 Ω
gen
V
= 60 V Min
(BR)DSX
50 Ω
V
DS
0
VOLTAGE AND CURRENT WAVEFORMS
TEST CIRCUIT
NOTES: A. The pulse generator has the following characteristics: t ≤ 10 ns, t ≤ 10 ns, Z = 50 Ω.
r
f
O
B. Input pulse duration (t ) is increased until peak current I
= 2.5 A.
w
AS
I
V
t
av
AS
(BR)DSX
2
Energy test level is defined as E
22 mJ min.
AS
Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
TYPICAL CHARACTERISTICS
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
vs
vs
FREE-AIR TEMPERATURE
DRAIN CURRENT
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
D
= 0.5 A
T = 25°C
A
0.9
0.8
0.7
0.6
0.5
0.4
0.3
V
GS
= 10 V
V
GS
= 6 V
V
= 15 V
= 20 V
GS
V
GS
= 15 V
V
GS
0.2
0.1
0
0
0.5
1
1.5
2
2.5
– 50 – 25
0
25
50
75
100 125
I
D
– Drain Current – A
T
A
– Free-Air Temperature – °C
Figure 5
Figure 6
DRAIN-TO-SOURCE CURRENT
vs
DISTRIBUTION OF
FORWARD TRANSCONDUCTANCE
DRAIN-TO-SOURCE VOLTAGE
15
10
5
5
T
= 25°C
= 0.5 A
A
T
= 25°C
A
4.5
I
V
D
= 15 V
DS
4
3.5
3
V
V
= 5 V
GS
= 4.5 V
GS
2.5
2
V
GS
= 4 V
1.5
V
V
= 3.5 V
= 3 V
GS
1
0.5
0
GS
V
= 2.5 V
GS
0
0.76
0.775
0.79
0.805
0.82
0
2
4
6
8
10 12 14 16 18 20
g
fs
– Forward Transconductance – S
V
DS
– Drain-to-Source Voltage – V
Figure 7
Figure 8
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
TYPICAL CHARACTERISTICS
GATE-SOURCE VOLTAGE
GATE-SOURCE THRESHOLD VOLTAGE
vs
vs
GATE CHARGE
FREE-AIR TEMPERATURE
2.5
20
18
16
14
12
10
8
I
T
= 0.25 A
= 25°C
D
A
I
= 10 mA
D
2
I
D
= 1 mA
1.5
V
V
= 20 V
DS
1
0.5
0
6
V
DS
= 30 V
4
2
0
= 48 V
DS
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Q – Gate Charge – nC
3
– 50 – 25
0
25
50
75
100 125
T
A
– Free-Air Temperature – °C
Figure 9
Figure 10
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN DIODE CURRENT
vs
SOURCE-TO-DRAIN DIODE VOLTAGE
SOURCE-TO-DRAIN DIODE VOLTAGE
1
3
T
A
= 25°C
0.7
2.5
T
A
= 125°C
0.4
0.2
2
T
A
= 25°C
1.5
0.1
0.07
1
0.5
0
0.04
0.02
0.01
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
V
SD
– Source-to-Drain Diode Voltage – V
V
SD
– Source-to-Drain Diode Voltage – V
Figure 11
Figure 12
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
TYPICAL CHARACTERISTICS
CLAMP-DIODE CURRENT
vs
CLAMP-DIODE REVERSE RECOVERY TIME
vs
CLAMP-DIODE VOLTAGE
REVERSE di/dt
3
140
130
120
110
100
90
I
V
T
= 0.1 A
F
T
A
= 25°C
= 48 V
= 25°C
R
2.5
A
2
1.5
80
70
1
0.5
0
60
50
40
30
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
10
20
30
40 50 60 70 80 100
Clamp-Diode Voltage – V
Reverse di/dt – A/µs
Figure 13
Figure 14
REVERSE di/dt
vs
FORWARD CURRENT
1000
T
A
= 25°C
600
400
200
V
CD
= 20 V
100
60
40
V
CD
= 40 V
20
10
6
4
2
1
0.01
0.1
1
10
I
F
– Forward Current – A
NOTE A: V
CD
= V
– V
clamp drain
Figure 15
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
TYPICAL CHARACTERISTICS
40
35
16
R
= 2.5 Ω
= 10 µA
= 25°C
L
I
T
G
14
12
10
8
A
V
= 37.5 V
DS
30
25
20
Gate-Source
Voltage
V
= 25 V
DS
V
DS
= 37.5 V
15
10
6
4
V
= 25 V
DS
V
= 12.5 V
DS
2
5
Drain-Source Voltage
0
0
100
200
300
400
500
600
700
800
900
t – Time – µs
Figure 16. Resistive Switching Waveforms
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
THERMAL INFORMATION
MAXIMUM DRAIN CURRENT
MAXIMUM CLAMP-DIODE CURRENT
vs
vs
DUTY CYCLE
DUTY CYCLE
3
2.8
2.6
2.4
2.2
2
3
2.8
2.6
2.4
2.2
2
N = 1
T
= 25°C
T = 25°C
A
A
N = Number of Outputs
Conducting Simultaneously
See Note A
N = Number of Outputs
Conducting Simultaneously
See Note A
N = 2
N = 3
N = 1
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
N = 2
N = 4
N = 5
N = 3
N = 4
N = 7
0.8
0.6
0.4
0.2
N = 5
0.8
0.6
0.4
N = 7
0
10 20 30 40 50 60 70 80 90 100
Duty Cycle – %
0
10 20 30 40 50 60 70 80 90 100
Duty Cycle – %
Figure 17
Figure 18
t
c
t
w
NOTE A: For Figures 17 and 18, d = t /t = 10 ms / t , where t and t are defined by the following:
w c
c
w
c
PEAK AVALANCHE CURRENT
vs
MAXIMUM DRAIN CURRENT
vs
TIME DURATION OF AVALANCHE
DRAIN-SOURCE VOLTAGE
10
6
5
4
4
1 ms
r
Limit
DS(on)
2
T
A
= 25°C
1
0.6
0.4
3
2
Thermal Limit
0.2
0.1
0.06
0.04
DC
T
A
= 125°C
0.02
0.01
T
= 25°C
A
1
0.1
1
10
100
0.001
0.01
0.1
1
V
DS
– Drain-To-Source Voltage – V
t
av
– Time Duration of Avalanche – ms
Figure 19
Figure 20
12
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
MECHANICAL INFORMATION
CERAMIC DUAL-IN-LINE PACKAGE
JW (R-GDIP-T24)
1.290 (32,80)
1.235 (31,30)
13
24
0.560 (14,20)
0.515 (13,10)
1
12
0.070 (1,78) MAX
0.100 (2,54)
0.060 (1,52)
0.070 (1,78)
0.020 (0,51)
0.225 (5,70)
0.150 (3,80)
0.610 (15,50)
0.590 (14,99)
Seating Plane
0.020 (0,51)
0.016 (0,41)
0.160 (4,06)
0.125 (3,17)
0.100 (2,54)
0°–15°
0.012 (0,30)
0.008 (0,20)
4040111/B 04/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. This package can be hermetically sealed with a ceramic lid using glass frit.
D. Index point is provided on cap for terminal identification only on press ceramic glass frit seal only
E. Falls within MIL-STD-1835 GDIP5-T24
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPIC2701
7-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
SLIS019A – SEPTEMBER 1992 – REVISED SEPTEMBER 1996
MECHANICAL INFORMATION
N (R-PDIP-T**)
PLASTIC DUAL-IN-LINE PACKAGE
16 PIN SHOWN
PINS **
DIM
14
16
18
20
0.775
(19,69)
0.775
(19,69)
0.920
(23.37)
0.975
(24,77)
A MAX
A MIN
A
16
9
0.745
(18,92)
0.745
(18,92)
0.850
(21.59)
0.940
(23,88)
0.260 (6,60)
0.240 (6,10)
1
8
0.070 (1,78) MAX
0.020 (0,51) MIN
0.310 (7,87)
0.290 (7,37)
0.035 (0,89) MAX
0.200 (5,08) MAX
Seating Plane
0.125 (3,18) MIN
0.100 (2,54)
0°–15°
0.021 (0,53)
0.015 (0,38)
0.010 (0,25)
M
0.010 (0,25) NOM
14/18 PIN ONLY
4040049/C 08/95
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-001 (20 pin package is shorter then MS-001.)
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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