TPS1HB08-Q1 [TI]

具有可调节电流限制的 40V、8mΩ、汽车类单通道智能高侧开关;


型号：	TPS1HB08-Q1
厂家：	TEXAS INSTRUMENTS
描述：	具有可调节电流限制的 40V、8mΩ、汽车类单通道智能高侧开关开关
文件：	总50页 (文件大小：1478K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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TPS1HB08-Q1

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

TPS1HB08-Q1 40V、8mΩ 单通道智能高侧开关

1 特性

3 说明

•

符合面向汽车应用的 AEC-Q100 标准

TPS1HB08-Q1 器件是一款适用于 12V 汽车系统的智

能高侧开关。该器件集成了强大的保护和诊断功能，

以确保即使在汽车系统中发生短路等有害事件时也能提

供输出端口保护。该器件通过可靠的电流限制来防止故

障，根据器件型号不同，电流限制在 6.4A 至 70A 范

围内可调或可设置为 94A。凭借较高的电流限制范

围，该器件可用于需要大瞬态电流的负载，而低电流限

制范围可为不需要高峰值电流的负载提供更好的保护。

该器件能够可靠地驱动各种负载分布。

–

温度等级 1：–40°C 至 125°C

器件 HBM ESD 分类等级 2

器件 CDM ESD 分类等级 C4B

可承受 40V 负载突降

•

提供功能安全

可帮助创建功能安全系统设计的文档

–

•

单通道智能高侧开关，具有8mΩ R_ON(T_J= 25°C)

可通过可调电流限制提高系统级可靠性

–

电流限制设定点范围为 6.4A 至 70A

版本 F：94A 固定 I_LIM

TPS1HB08-Q1 还能够提供可改进负载诊断的高精度模

拟电流检测。通过向系统 MCU 报告负载电流和器件温

度，该器件可实现预测性维护和负载诊断，从而延长系

统寿命。

•

强大的集成输出保护：

–

集成热保护

接地短路和电池短路保护

TPS1HB08-Q1 采用 HTSSOP 封装，可减小 PCB 尺

寸。

反向电池事件保护包括 FET 通过反向电流自动

开启

器件信息⁽¹⁾

–

在失电和接地失效时自动关闭

集成输出钳位对电感负载进行消磁

可配置故障处理

器件型号

封装

封装尺寸（标称值）

TPS1HB08-Q1

HTSSOP (16)

5.0mm × 4.40mm

•

可对模拟检测输出进行配置，以精确测量：

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附

录。

–

负载电流

器件温度

简化原理图

通过 SNS 引脚或 FLT 引脚提供故障指示

开路负载和电池短路检测

V_BAT

–

DIA_EN

VBB

Bulbs

SEL1

2 应用

•

汽车显示模块

SNS

Relays/Motors

µC

ILIM

65W 汽车前照灯

ADAS 模块

VOUT

Power Module:

Cameras, Sensors

LATCH

座椅舒适模块

General Resistive,

Capacitive, Inductive Loads

变速器控制单元

HVAC 控制模块

车身控制模块

GND

白炽灯和 LED 照明

本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确

性和有效性。在实际设计之前，请务必参考最新版本的英文版本。

English Data Sheet: SLVSE16

TPS1HB08-Q1

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

www.ti.com.cn

9.2 Functional Block Diagram ....................................... 18

9.3 Feature Description................................................. 18

9.4 Device Functional Modes........................................ 30

10 Application and Implementation........................ 32

10.1 Application Information.......................................... 32

10.2 Typical Application ............................................... 35

10.3 Typical Application ................................................ 38

11 Power Supply Recommendations ..................... 39

12 Layout................................................................... 40

12.1 Layout Guidelines ................................................. 40

12.2 Layout Example .................................................... 40

13 器件和文档支持 ..................................................... 41

13.1 文档支持 ............................................................... 41

13.2 接收文档更新通知 ................................................. 41

13.3 支持资源................................................................ 41

13.4 商标....................................................................... 41

13.5 静电放电警告......................................................... 41

13.6 Glossary................................................................ 41

14 机械、封装和可订购信息....................................... 41

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Device Comparison Table..................................... 3

Pin Configuration and Functions......................... 3

6.1 Recommended Connections for Unused Pins.......... 4

Specifications......................................................... 5

7.1 Absolute Maximum Ratings ...................................... 5

7.2 ESD Ratings.............................................................. 5

7.3 Recommended Operating Conditions....................... 5

7.4 Thermal Information.................................................. 5

7.5 Electrical Characteristics........................................... 6

7.6 SNS Timing Characteristics ...................................... 8

7.7 Switching Characteristics.......................................... 9

7.8 Typical Characteristics............................................ 10

Parameter Measurement Information ................ 15

Detailed Description ............................................ 17

9.1 Overview ................................................................. 17

4 修订历史记录

Changes from Revision B (December 2019) to Revision C

Page

•

Deleted tablenote from the Device Comparison Table to remove product preview from Versions A and B.......................... 3

Changes from Revision A (December 2019) to Revision B

Page

•

向特性部分添加了提供功能安全的链接.................................................................................................................................. 1

Changes from Original (May 2019) to Revision A

Page

•

将“预告信息”更改为“生产数据”................................................................................................................................................ 1

TPS1HB08-Q1

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ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

5 Device Comparison Table

Table 1. Device Options

Device

Part Number

Current Limit

Current Limit Range

Overcurrent Behavior

Version

TPS1HB08A-Q1

TPS1HB08B-Q1

TPS1HB08F-Q1

Resistor Programmable

Internally Set

6.4 A to 32 A

14 A to 70 A

94 A

Disable switch immediately

6 Pin Configuration and Functions

PWP Package

16-Pin HTSSOP

Top View

Pin Functions

I/O

DESCRIPTION

Version

A/B

NAME

Version F

GND

SNS

LATCH

—

Device ground

Sense output

Sets fault handling behavior (latched or auto-retry)

Control input, active high

ILIM

Connect resistor to set current-limit threshold

Open drain output with pulldown to signal fault.

Channel output

FLT

VOUT

6 - 11

12 - 13, 15 12 - 13, 15

No Connect, leave floating

Diagnostics select. No functionality on device version F; connect to IC GND

through R_PROTresistor

SEL1

DIA_EN

VBB

Diagnostic enable, active high

Exposed

pad

Exposed

pad

Power supply input

TPS1HB08-Q1

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

www.ti.com.cn

6.1 Recommended Connections for Unused Pins

The TPS1HB08-Q1 is designed to provide an enhanced set of diagnostic and protection features. However, if the

system design only allows for a limited number of I/O connections, some pins may be considered as optional.

Table 2. Connections for Optional Pins

PIN NAME

CONNECTION IF NOT USED

Ground through 1-kΩ resistor Analog sense is not available.

With LATCH unused, the device will auto-retry after a fault. If latched

IMPACT IF NOT USED

SNS

Float or ground through

R_PROTresistor

behavior is desired, but the system describes limited I/O, it is possible to

use one microcontroller output to control the latch function of several high-

side channels.

LATCH

If the ILIM pin is left floating, the device will be set to the default internal

current-limit threshold. This is considered a fault state for the device.

ILIM (Version A/B)

FLT (Version F)

Float

If the FLT pin is unused, the system cannot read faults from the output.

SEL1 selects the T_Jsensing feature. With SEL1 unused, only current

sensing and open load detection are available. If unused, must be

grounded through a resistor to engage FET turn-on during reverse battery.

Ground through R_PROT

resistor

SEL1

Float or ground through

R_PROTresistor

With DIA_EN unused, the analog sense, open-load, and short-to-battery

diagnostics are not available.

DIA_EN

TPS1HB08-Q1

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ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

UNIT

Maximum continuous supply voltage, V_BB

Load dump voltage, V_LD

ISO16750-2:2010(E)

Reverse battery voltage, V_Rev, t ≤ 3 minutes

Enable pin voltage, V_EN

–18

–1

LATCH pin voltage, V_LATCH

Diagnostic Enable pin voltage, V_{DIA_EN}

Sense pin voltage, V_SNS

Select pin voltage, V_SEL`

Reverse ground current, I_GND

Energy dissipation during turnoff, E_TOFF

Maximum junction temperature, T_J

Storage temperature, T_stg

V_BB< 0 V

–50

95⁽²⁾

56⁽²⁾

150

°C

Single pulse, L_OUT= 5 mH, T_J,start= 125°C

Repetitive pulse, L_OUT= 5 mH, T_J,start= 125°C

–65

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

(2) For further details, see the section regarding switch-off of an inductive load.

7.2 ESD Ratings

VALUE

UNIT

All pins except VBB and

VOUT

±2000

Human-body model (HBM), per AEC Q100-002⁽¹⁾

Charged-device model (CDM), per AEC Q100-011

Electrostatic

discharge

V_(ESD)

VBB and VOUT

All pins

±4000

±750

(1) AEC-Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specifications.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

(1)

V_BB

Nominal supply voltage

V_BB

Extended supply voltage⁽²⁾

V_EN

Enable voltage

–1

5.5

V_LATCH

V_{DIA_EN}

V_SEL1

V_SNS

LATCH voltage

Diagnostic Enable voltage

Select voltage

Sense voltage

(1) All operating voltage conditions are measured with respect to device GND

(2) Device will function within extended operating range, however some parametric values might not apply

7.4 Thermal Information

TPS1HB08-Q1

(1) (2)

THERMAL METRIC

PWP (HTSSOP)

16 PINS

UNIT

R_θJA

Junction-to-ambient thermal resistance

32.6

°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2) The thermal parameters are based on a 4-layer PCB according to the JESD51-5 and JESD51-7 standards.

TPS1HB08-Q1

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

www.ti.com.cn

Thermal Information (continued)

TPS1HB08-Q1

(1) (2)

THERMAL METRIC

PWP (HTSSOP)

UNIT

16 PINS

25.3

9.2

R_θJC(top)

R_θJB

Junction-to-case (top) thermal resistance

°C/W

Junction-to-board thermal resistance

ψ_JT

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case (bottom) thermal resistance

2.3

ψ_JB

9.3

R_θJC(bot)

1.0

7.5 Electrical Characteristics

V_BB= 6 V to 18 V, T_J= -40°C to 150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT VOLTAGE AND CURRENT

V_DSCLAMPV_DSclamp voltage

V_BBCLAMP

V_BBclamp voltage

V_BBundervoltage lockout

falling

V_UVLOF

Measured with respect to the GND pin of the device

2.0

2.2

V_BBundervoltage lockout

rising

V_UVLOR

V_BB= 13.5 V, T_J= 25°C

V_EN= V_{DIA_EN}= 0 V, V_OUT= 0 V

0.1

0.5

µA

Standby current (total

device leakage including

MOSFET)

I_SB

V_BB= 13.5 V, T_J= 85°C,

V_EN= V_{DIA_EN}= 0 V, V_OUT= 0 V

µA

IL_NOM

Continuous load current

T_AMB= 70°C

V_BB= 13.5 V, T_J= 25°C

V_EN= V_{DIA_EN}= 0 V, V_OUT= 0 V

0.01

0.5

µA

I_OUT(standby)Output leakage current

V_BB= 13.5 V, T_J= 125°C

V_EN= V_{DIA_EN}= 0 V, V_OUT= 0 V

µA

V_BB= 13.5 V, I_SNS= 0 mA

V_EN= 0 V, V_{DIA_EN}= 5 V, V_OUT= 0V

Current consumption in

diagnostic mode

I_DIA

V_BB= 13.5 V

V_EN= V_{DIA_EN}= 5 V, I_OUT= 0 A

I_Q

Quiescent current

t_STBY

Standby mode delay time V_EN= V_{DIA_EN}= 0 V to standby

RON CHARACTERISTICS

T_J= 25°C, 6 V ≤ V_BB≤ 28 V

T_J= 150°C, 6 V ≤ V_BB≤ 28 V

T_J= 25°C, 3 V ≤ V_BB≤ 6 V

T_J= 25°C, -18 V ≤ V_BB≤ -8 V

T_J= 105°C, -18 V ≤ V_BB≤ -8 V

mΩ

On-resistance

(Includes MOSFET and

package)

R_ON

On-resistance during

reverse polarity

R_ON(REV)

CURRENT SENSE CHARACTERISTICS

Current sense ratio

I_OUT/ I_SNS

K_SNS

I_OUT= 1 A

5000

TPS1HB08-Q1

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ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

Electrical Characteristics (continued)

V_BB= 6 V to 18 V, T_J= -40°C to 150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

–5

TYP

MAX

5.3

UNIT

2.000

I_OUT= 10 A

I_OUT= 3 A

0.6

0.2

–5

5.3

I_OUT= 1 A

–5

5.3

0.06043

0.0206

0.0106

0.0046

Current sense current

and accuracy

V_EN= V_{DIA_EN}= 5 V,

V_SEL1= 0 V

I_SNSI

I_OUT= 300 mA

I_OUT= 100 mA

I_OUT= 50 mA

I_OUT= 20m A

-4.6

-13.6

-28.3

-56

6.2

15.1

30.3

57.3

TJ SENSE CHARACTERISTICS

T_J= -40°C

T_J= 25°C

T_J= 85°C

T_J= 125°C

T_J= 150°C

0.01

0.72

1.25

1.61

1.80

0.12

0.85

0.38

0.98

1.79

2.31

2.70

Temperature sense

current

Device Version A/B

V_{DIA_EN}= 5 V, V_SEL1= 5

I_SNST

1.52

1.96

2.25

dI_SNST/dT

Coefficient

0.0112

mA/°C

SNS CHARACTERISTICS

I_SNSFH

I_SNSfault high-level

I_SNSleakage

V_{DIA_EN}= 5 V, V_SEL1= 0 V

V_{DIA_EN}= 0 V

4.5

5.3

µA

I_SNSleak

CURRENT LIMIT CHARACTERISTICS

R_ILIM= GND, open, or

out of range

Device Version A, T_J=

-40°C to 150°C

R_ILIM= 5 kΩ

27.2

4.7

36.8

8.1

R_ILIM= 25 kΩ

6.4

R_ILIM= GND, open, or

out of range

104

I_CL

Current limit threshold

Device Version B, T_J=

-40°C to 150°C

R_ILIM= 5 kΩ

47.1

9.9

84.2

17.8

105

R_ILIM= 25 kΩ

T_J= -40°C to 60°C

T_J= 150°C

Device Version F

86.1

Version A

Version B

120

245

160

350

208 A * kΩ

K_CL

Current Limit Ratio

437.5 A * kΩ

FAULT CHARACTERISTICS

Open-load (OL) detection

V_OL

V_FLT

t_OL1

t_OL2

t_OL3

V_EN= 0 V, V_{DIA_EN}= 5 V, V_SEL1= 0 V

I_FLT= 1 mA

voltage

FLT low output voltage

(Version F only)

V_EN= 5 V to 0 V, V_{DIA_EN}= 5 V, V_SEL1= 0 V

I_OUT= 0 mA, V_OUT= 4 V

OL and STB indication-

time from EN falling

300

500

700

µs

V_EN= 0 V, V_{DIA_EN}= 0 V to 5 V, V_SEL1= 0 V

I_OUT= 0 mA, V_OUT= 4 V

OL and STB indication-

time from DIA_EN rising

V_EN= 0 V, V_{DIA_EN}= 5 V, V_SEL1= 0 V

I_OUT= 0 mA, V_OUT= 0 V to 4 V

OL and STB indication-

time from VOUT rising

TPS1HB08-Q1

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

www.ti.com.cn

Electrical Characteristics (continued)

V_BB= 6 V to 18 V, T_J= -40°C to 150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

T_ABS

T_HYS

Thermal shutdown

150

°C

Thermal shutdown

hysteresis

°C

V_{DIA_EN}= 5 V

Time between switch shutdown and I_SNSsettling at

I_SNSFH

Fault shutdown

indication-time

t_FAULT

µs

Time from fault shutdown until switch re-enable

(thermal shutdown or current limit).

t_RETRY

Retry time

EN PIN CHARACTERISTICS

V_{IL, EN}

V_{IH, EN}

V_{IHYS, EN}

R_EN

Input voltage low-level

No GND network diode

0.8

Input voltage high-level

Input voltage hysteresis

Internal pulldown resistor

Input current low-level

Input current high-level

2.0

0.5

350

MΩ

µA

I_{IL, EN}

V_EN= 0.8 V

V_EN= 5 V

0.8

5.0

I_{IH, EN}

DIA_EN PIN CHARACTERISTICS

V_{IL, DIA_EN}Input voltage low-level

V_{IH, DIA_EN}Input voltage high-level

No GND network diode

0.8

2.0

0.5

V_IHYS,

DIA_EN

Input voltage hysteresis

350

R_{DIA_EN}

Internal pulldown resistor

Input current low-level

Input current high-level

0.8

5.0

MΩ

µA

I_{IL, DIA_EN}

I_{IH, DIA_EN}

V_{DIA_EN}= 0.8 V

V_{DIA_EN}= 5 V

SEL1 PIN CHARACTERISTICS

V_{IL, SEL1}

V_{IH, SEL1}

Input voltage low-level

Input voltage high-level

No GND network diode

0.8

2.0

0.5

V_{IHYS, SEL1}Input voltage hysteresis

350

MΩ

µA

R_SEL1

Internal pulldown resistor

Input current low-level

Input current high-level

I_{IL, SEL1}

I_{IH, SEL1}

V_SEL1= 0.8 V

V_SEL1= 5 V

0.8

LATCH PIN CHARACTERISTICS

V_{IL, LATCH}Input voltage low-level

No GND network diode

0.8

V_{IH, LATCH}Input voltage high-level

2.0

0.5

V_IHYS,

LATCH

Input voltage hysteresis

350

R_LATCH

Internal pulldown resistor

Input current low-level

Input current high-level

0.8

5.0

MΩ

µA

I_{IL, LATCH}

I_{IH, LATCH}

V_LATCH= 0.8 V

V_LATCH= 5 V

7.6 SNS Timing Characteristics

V_BB= 6 V to 18 V, T_J= -40°C to +150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SNS TIMING - CURRENT SENSE

V_EN= 5 V, V_{DIA_EN}= 0 V to 5 V

R_SNS= 1 kΩ, R_L= 2.6 Ω

t_SNSION1

t_SNSION2

Settling time from rising edge of DIA_EN

µs

V_EN= V_{DIA_EN}= 0 V to 5 V

R_SNS= 1 kΩ, R_L= 2.6 Ω

Settling time from rising edge of EN and

DIA_EN

200

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ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

SNS Timing Characteristics (continued)

V_BB= 6 V to 18 V, T_J= -40°C to +150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V_EN= 0 V to 5 V, V_{DIA_EN}= 5 V

R_SNS= 1 kΩ, R_L= 2.6 Ω

t_SNSION3

t_SNSIOFF1

t_SETTLEH

t_SETTLEL

Settling time from rising edge of EN

165

µs

V_EN= 5 V, V_{DIA_EN}= 5 V to 0 V

R_SNS= 1 kΩ, R_L= 2.6 Ω

Settling time from falling edge of DIA_EN

Settling time from rising edge of load step

Settling time from falling edge of load step

µs

V_EN= 5 V, V_{DIA_EN}= 5 V

R_SNS= 1 kΩ, I_OUT= 1 A to 5 A

V_EN= 5 V, V_{DIA_EN}= 5 V

R_SNS= 1 kΩ, I_OUT= 5 A to 1 A

SNS TIMING - TEMPERATURE SENSE

V_EN= 5 V, V_{DIA_EN}= 0 V to 5 V

R_SNS= 1 kΩ

t_SNSTON1

t_SNSTON2

t_SNSTOFF

Settling time from rising edge of DIA_EN

µs

V_EN= 0 V, V_{DIA_EN}= 0 V to 5 V

R_SNS= 1 kΩ

Settling time from rising edge of DIA_EN

Settling time from falling edge of DIA_EN

V_EN= X, V_{DIA_EN}= 5 V to 0 V

R_SNS= 1 kΩ

SNS TIMING - MULTIPLEXER

V_EN= 5 V, V_{DIA_EN}= 5 V

V_SEL1= 5 V to 0 V

R_SNS= 1 kΩ, R_L= 2.6 Ω

Settling time from temperature sense to

current sense

µs

t_MUX

V_EN= 5 V, V_{DIA_EN}= 5 V

V_SEL1= 0 V to 5 V

R_SNS= 1 kΩ, R_L= 2.6 Ω

Settling time from current sense to

temperature sense

7.7 Switching Characteristics

V_BB= 13.5 V, T_J= -40°C to +150°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V_BB= 13.5 V, R_L= 2.6 Ω, 50% EN

rising to 10% V_OUTrising

t_DR

Turnon delay time (from Active)

100

0.7

µs

V_BB= 13.5 V, R_L= 2.6 Ω, 50% EN

falling to 90% V_OUTFalling

t_DF

Turnoff delay time

V_OUTrising slew rate

V_OUTfalling slew rate

Turnon time (active)

Turnoff time

0.1

µs

V/µs

µs

V_BB= 13.5 V, 20% to 80% of V_OUT

SR_R

SR_F

t_ON

0.4

R_L= 2.6 Ω

V_BB= 13.5 V, 80% to 20% of V_OUT

0.7

R_L= 2.6 Ω

V_BB= 13.5 V, R_L= 2.6 Ω, 50% EN

rising to 80% V_OUTrising

235

V_BB= 13.5 V, R_L= 2.6 Ω, 50% EN

falling to 20% V_OUTfalling

t_OFF

µs

200-µs enable pulse, V_S= 13.5 V,

R_L= 2.6 Ω

PWM accuracy - average load

current

Δ_PWM

–25

–85

t_ON- t_OFF

E_ON

Turnon and turnoff matching

200-µs enable pulse

µs

Switching energy losses during

turnon

V_BB= 13.5 V, R_L= 2.6 Ω

0.8

Switching energy losses during

turnoff

E_OFF

V_BB= 13.5 V, R_L= 2.6 Ω

0.8

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7.8 Typical Characteristics

5.5

6 V

8 V

13.5 V

18 V

4.5

3.5

2.5

1.5

0.5

0.0001

0.001

0.01

0.1

Time (s)

0.5

2 3 5 10 20

100

-40 -20

80 100 120 140 160

Temperature (èC)

V_OUT= 0 V

V_EN= 0 V

V_{DIAG_EN}= 0 V

图 1. Transient Thermal Impedance

图 2. Standby Current (I_SB) vs Temperature

0.55

0.5

4.35

6 V

8 V

13.5 V

18 V

6 V

8 V

13.5 V

18 V

4.3

4.25

4.2

0.45

0.4

4.15

4.1

0.35

0.3

4.05

0.25

0.2

3.95

3.9

0.15

0.1

3.85

3.8

3.75

3.7

0.05

3.65

3.6

-40 -20

-0.05

-40

-20

100 120 140

80 100 120 140 160

Temeprature (èC)

Temperature (èC)

V_OUT= 0 V

V_EN= 0 V

V_{DIAG_EN}= 0 V

I_OUT= 0 A

V_EN= 5 V

V_SEL1= 0 V

V_{DIAG_EN}= 5 V

R_SNS= 1 kΩ

图 3. Output Leakage Current (I_OUT(standby)) vs Temperature

图 4. Quiescent Current (I_Q) vs Temperature

6 V

8 V

13.5 V

18 V

25èC

-40èC

85èC

125èC

150èC

12.5

11.5

10.5

9.5

8.5

7.5

6.5

5.5

-40 -20

80 100 120 140 160

2.5

7.5 10 12.5 15 17.5 20 22.5 25 27.5 30

V_BB(V)

Temeprature (èC)

I_OUT= 200 mA

V_EN= 5 V

V_{DIAG_EN}= 0 V

I_OUT= 200 mA

V_EN= 5 V

V_{DIAG_EN}= 0 V

R_SNS= 1 kΩ

V_BB= 13.5 V

图 5. On Resistance (R_ON) vs Temperature

图 6. On Resistance (R_ON) vs V_BB

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Typical Characteristics (接下页)

6 V

8 V

13.5 V

18 V

6 V

8 V

13.5 V

18 V

-40

-20

100 120 140

-40

-20

100 120 140

Temeprature (èC)

Temperature (èC)

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 0 V to 5 V

V_BB= 13.5 V

V_{DIAG_EN}= 0 V

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 5 V to 0 V

V_BB= 13.5 V

V_{DIAG_EN}= 0 V

图 7. Turn-on Delay Time (t_DR) vs Temperature

图 8. Turn-off Delay Time (t_DF) vs Temperature

0.5

0.45

0.4

0.5

6 V

8 V

13.5 V

18 V

0.45

0.4

0.35

0.3

0.35

0.3

0.25

0.2

0.25

0.2

0.15

6 V

0.15

0.1

8 V

13.5 V

0.05

18 V

0.05

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (èC)

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 0 V to 5 V

V_BB= 13.5 V

V_{DIAG_EN}= 0 V

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 5 V to 0 V

V_BB= 13.5 V

V_{DIAG_EN}= 0 V

图 9. V_OUTSlew Rate Rising (SR_R) vs Temperature

图 10. V_OUTSlew Rate Falling (SR_F) vs Temperature

120

6 V

8 V

13.5 V

6 V

8 V

13.5 V

18 V

110

18 V

100

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (èC)

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 0 V to 5 V

V_BB= 13.5 V

V_{DIAG_EN}= 0 V

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 5 V to 0 V

V_BB= 13.5 V

V_{DIAG_EN}= 0 V

图 11. Turn-on Time (t_ON) vs Temperature

图 12. Turn-off Time (t_OFF) vs Temperature

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Typical Characteristics (接下页)

0.16

0.15

0.14

0.13

0.12

0.11

0.1

-40èC

25èC

85èC

125èC

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

-5

-10

6 V

8 V

-15

13.5 V

18 V

-20

-40

-20

100 120 140

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Temperature (èC)

I_LOAD(A)

R_OUT= 2.6 Ω

R_SNS= 1 kΩ

V_EN= 0 V to 5 V

and 5 V to 0 V

V_{DIAG_EN}= 0 V

V_SEL1= 0 V

V_EN= 5 V

V_{DIAG_EN}= 5 V

R_SNS= 1 kΩ

V_BB= 13.5 V

图 13. Turn-on and Turn-off Matching (t_ON- t_OFF) vs

图 14. Current Sense Output Current (I_SNSI) vs Load Current

Temperature

(I_OUT) Across Temperature

0.16

2.2

6 V

8 V

13.5 V

18 V

6 V

8 V

13.5 V

18 V

0.15

0.14

0.13

0.12

0.11

0.1

1.8

1.6

1.4

1.2

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0.8

0.6

0.4

0.2

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-40 -20

80 100 120 140 160

I_LOAD(A)

Temperature (èC)

V_SEL1= 0 V

V_EN= 5 V

T_A= 25°C

V_{DIAG_EN}= 5 V

V_SEL1= 5 V

V_EN= 0 V

V_{DIAG_EN}= 5 V

R_SNS= 1 kΩ

图 15. Current Sense Output Current (I_SNSI) vs Load Current

图 16. Temperature Sense Output Current (I_SNST) vs

(I_OUT) Across V_BB

Temperature

1.64

6 V

8 V

6 V

8 V

13.5 V

18 V

13.5 V

18 V

4.9

1.59

4.8

1.54

4.7

4.6

4.5

1.49

1.44

1.39

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (èC)

V_SEL1= 0 V

V_EN= 0 V

V_{DIAG_EN}= 5 V

V_EN= 3.3 V to 0 V

V_OUT= 0 V

V_{DIAG_EN}= 0 V

R_SNS= 500 Ω

V_OUTFloating

R_OUT= 1 kΩ

图 17. Fault High Output Current (I_SNSFH) vs Temperature

图 18. V_ILvs Temperature

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Typical Characteristics (接下页)

1.95

1.9

400

390

380

370

360

350

340

330

320

310

300

6 V

8 V

13.5 V

18 V

6 V

8 V

13.5 V

18 V

1.85

1.8

1.75

1.7

1.65

1.6

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (èC)

V_EN= 0 V to 3.3 V

V_OUT= 0 V

V_{DIAG_EN}= 0 V

V_EN= 0 V to 3.3 V

and 3.3 V to 0 V

V_OUT= 0 V

V_{DIAG_EN}= 0 V

R_OUT= 1 kΩ

图 20. V_IHYSvs Temperature

图 19. V_IHvs Temperature

1.4

6.9

6 V

8 V

13.5 V

18 V

6 V

8 V

13.5 V

18 V

1.35

1.3

6.6

6.3

1.25

1.2

5.7

5.4

5.1

4.8

4.5

4.2

3.9

1.15

1.1

1.05

0.95

0.9

0.85

0.8

-40

-20

100 120 140

-40

-20

100 120 140

Temperature (èC)

V_EN= 0.8 V

V_OUT= 0 V

V_{DIAG_EN}= 0 V

V_EN= 5 V

V_OUT= 0 V

V_{DIAG_EN}= 0 V

R_OUT= 1 kΩ

图 21. I_ILvs Temperature

图 22. I_IHvs Temperature

R_OUT1= 2.6 Ω

R_SNS= 1 kΩ

V_{DIA_EN}= 5 V

R_OUT1= 2.6 Ω

R_SNS= 1 kΩ

V_{DIA_EN}= 5 V

V_SEL= 0 V

图 23. Turn-on Time (t_ON

)

图 24. Turn-off Time (t_OFF)

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Typical Characteristics (接下页)

R_OUT1= 2.6 Ω

R_SNS= 1 kΩ

V_SEL= 0 V

V_BB= 13.5 V

T_A= 25°C

I_OUT1= 5 A

I_OUT1= 1 A to 5 A

V_BB= 13.5 V

V_EN= 0 V to 5 V

图 25. I_SNSSettling time (t_SNSION1) on Load Step

图 26. SNS Output Current Measurement Enable on

DIAG_EN PWM

L_OUT= 5 µH to

GND

V_EN= 0 V to 5 V

R_SNS= 1 kΩ

V_SEL= 0 V

T_A= 25°C

V_BB= 13.5 V

T_A= 25°C

L_OUT= 5 mH

V_{DIAG_EN}= 5 V

图 27. Device Version F Short Circuit Event

图 28. 5 mH Inductive Load Demagnetization

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8 Parameter Measurement Information

I_BB

VBB

DIA_EN

I_{DIA_EN}

I_SNS

SNS

I_LATCH

LATCH

SEL1

I_SEL1

I_EN

I_ILIM

ILIM

VOUT

I_OUT

GND

图 29. Parameter Definitions

(1)

V_EN

50%

90%

t_DR

t_DF

V_OUT

10%

t_ON

t_OFF

Rise and fall time of V_ENis 100 ns.

图 30. Switching Characteristics Definitions

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Parameter Measurement Information (接下页)

V_EN

V_{DIA_EN}

I_OUT

I_SNS

t_SNSION1

t_SNSION2

t_SNSION3

t_SNSIOFF1

V_EN

V_{DIA_EN}

I_OUT

I_SNS

t_SETTLEH

t_SETTLEL

V_EN

V_{DIA_EN}

T_J

I_SNS

t_SNSTON1

t_SNSTON2

t_SNSTOFF

NOTES: Rise and fall times of control signals are 100 ns. Control signals include: EN, DIA_EN, SEL1

SEL1 pin must be set to the appropriate value.

图 31. SNS Timing Characteristics Definitions

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9 Detailed Description

9.1 Overview

The TPS1HB08-Q1 device is a single-channel smart high-side switch intended for use with 12-V automotive

batteries. Many protection and diagnostic features are integrated in the device.

Diagnostics features include the analog SNS output that is capable of providing a signal that is proportional to

load current or device temperature. The high-accuracy load current sense allows for diagnostics of complex

loads. Version F of the device includes an open drain FLT pin that indicates device fault states.

This device includes protection through thermal shutdown, current limiting, transient withstand, and reverse

battery operation. For more details on the protection features, refer to the Feature Description and Application

Information sections of the document.

The TPS1HB08-Q1 is one device in a family of TI high side switches. For each device, the part number indicates

elements of the device behavior. 图 32 gives an example of the device nomenclature.

图 32. Naming Convention

TPS1HB08-Q1

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9.2 Functional Block Diagram

The functional block diagram shown is for device versions A/B. For version F, the ILIM pin will be replaced by

open drain output FLT .

VBB

VBB to GND

Clamp

Internal Power

Supply

VBB to VOUT

Clamp

GND

VOUT

Gate Driver

Power FET

LATCH

ILIM

Current Limit

Thermal

Shutdown

Open-load /

Short-to-Bat

Detection

DIA_EN

SEL1

Fault

Indication

SNS

SNS Mux

Current Sense

Temperature

Sense

9.3 Feature Description

9.3.1 Protection Mechanisms

The TPS1HB08-Q1 is designed to operate in the automotive environment. The protection mechanisms allow the

device to be robust against many system-level events such as load dump, reverse battery, short-to-ground, and

more.

There are two protection features which, if triggered, will cause the switch to automatically disable:

•

Thermal Shutdown

Current Limit

When any of these protections are triggered, the device will enter the FAULT state. In the FAULT state, the fault

indication will be available on the SNS pin (see the Diagnostic Mechanisms section of the data sheet for more

details). For version F of the device, the fault will also be indicated on the FLT pin.

The switch is no longer held off and the fault indication is reset when all of the below conditions are met:

•

LATCH pin is low

t_RETRYhas expired

All faults are cleared (thermal shutdown, current limit)

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Feature Description (接下页)

9.3.1.1 Thermal Shutdown

The TPS1HB08-Q1 includes a temperature sensor on the power FET and also within the controller portion of the

device. There are two cases that the device will consider to be a thermal shutdown fault:

•

T_J,FET> T_ABS

(T_J,FET– T_J,controller) > T_REL

After the fault is detected, the switch will turn off. If T_J,FETpasses T_ABS, the fault is cleared when the switch

temperature decreases by the hysteresis value, T_HYS. If instead the T_RELthreshold is exceeded, the fault is

cleared after T_RETRYpasses.

9.3.1.2 Current Limit

When I_OUTreaches the current limit threshold, I_CL, the channel will switch off immediately. The I_CLvalue will vary

with slew rate and a fast current increase that occurs during a powered-on short circuit can temporarily go above

the specified I_CLvalue. When the switch is in the FAULT state it will output an output current I_SNSFHon the SNS

pin and on version F of the device, the fault will also be indicated on the corresponding FLT pin.

During a short circuit event, the device will hit the I_CLvalue that is listed in the Electrical Characteristics table (for

the given device version and R_ILIM) and then turn the output off to protect the device. The device will register a

short circuit event when the output current exceeds I_CL, however the measured maximum current may exceed

the I_CLvalue due to the TPS1HB08-Q1 deglitch filter and turn-off time. This deglitch time is defined at 3 µs so

therefore use the test setup described in TPS1HB08-Q1 AEC-Q100-012 Short Circuit Reliability and take 3 µs

before the peak value as the I_CL. The device is guaranteed to protect itself during a short circuit event over the

nominal supple voltage range (as defined in the Electrical Characteristics table) at 125°C.

On version F of the device, the current limit set point of the device is flat from -40°C to 60°C, and then will

linearly decrease until 150°C. This decrease of the current limit is designed to protect the part in even hot

temperatures where a short-circuit event causes more damage.

9.3.1.2.1 Current Limit Foldback

Version B and F of the TPS1HB08-Q1 implement a current limit foldback feature that is designed to protect the

device in the case of a long-term fault condition. If the device undergoes fault shutdown events (either of thermal

shutdown or current limit) seven consecutive times, the current limit will be reduced to half of the original value.

The device will revert back to the original current limit threshold if either of the following occurs:

•

The device goes to standby mode.

The switch turns on and turns off without any fault occurring.

Version A do not implement the current limit foldback due to the lower current limit causing less harm during

repetitive long-term faults.

9.3.1.2.2 Programmable Current Limit

All versions except F of the TPS1HB08-Q1 include an adjustable current limit. Some applications (for example,

incandescent bulbs) will require a high current limit while other applications can benefit from a lower current limit

threshold. In general, wherever possible a lower current limit is recommended due to allowing system

advantages through:

•

Reduced size and cost in current carrying components such as PCB traces and module connectors

Less disturbance at the power supply (V_BBpin) during a short circuit event

Improved protection of the downstream load

To set the current limit threshold, connect a resistor from I_LIMto V_BB. The current limit threshold is determined by

Equation 1 (R_ILIMin kΩ):

I_CL= K_CL/ R_ILIM

(1)

The R_ILIMrange is between 5 kΩ and 25 kΩ. An R_ILIMresistor is required, however in the fault case where the pin

is floating, grounded, or outside of this range the current limit will default to an internal level that is defined in the

Specifications section of this document. If R_ILIMis out of this range, the device cannot guarantee complete short-

circuit protection.

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Feature Description (接下页)

注

Capacitance on the I_LIMpin can cause I_LIMto go out of range during short circuit events.

For accurate current limiting, place R_ILIMnear to the device with short traces to ensure <5

pF capacitance to GND on the I_LIMpin.

For device version F, there is no I_LIMpin and the current limit is not adjustable. In this case, the device will

current limit at the internal threshold I_CLas defined in the Electrical Characteristics section.

9.3.1.2.3 Undervoltage Lockout (UVLO)

The device monitors the supply voltage V_BBto prevent unpredicted behaviors in the event that the supply voltage

is too low. When the supply voltage falls down to V_UVLOF, the output stage is shut down automatically. When the

supply rises up to V_UVLOR, the device turns back on.

During an initial ramp of V_BBfrom 0 V at a ramp rate slower than 1 V/ms, V_ENpin will have to be held low until

V_BBis above UVLO threshold (with respect to board ground) and the supply voltage to the device has reliably

reached above the UVLO condition. For best operation, ensure that V_BBhas risen above UVLO before setting the

V_ENpin to high.

9.3.1.2.4 V_BBDuring Short-to-Ground

When V_OUTis shorted to ground, the module power supply (V_BB) can have a transient decrease. This is caused

by the sudden increase in current flowing through the wiring harness cables. To achieve ideal system behavior, it

is recommended that the module maintain V_BB> 3 V (above the maximum V_UVLOF) during V_OUTshort-to-ground.

This is typically accomplished by placing bulk capacitance on the power supply node.

9.3.1.3 Voltage Transients

The TPS1HB08-Q1 device contains two types of voltage clamps which protect the FET against system-level

voltage transients. The two different clamps are shown in 图 33.

The clamp from V_BBto GND is primarily used to protect the controller from positive transients on the supply line

(for example, ISO7637-2). The clamp from V_BBto V_OUTis primarily used to limit the voltage across the FET when

switching off an inductive load. If the voltage potential from V_BBto GND exceeds the V_BBclamp level, the clamp

will allow current to flow through the device from V_BBto GND (Path 2). If the voltage potential from V_BBto V_OUT

exceeds the clamping voltage, the power FET will allow current to flow from V_BBto V_OUT(Path 3). Additional

capacitance from V_BBto GND can increase the reliability of the system during ISO 7637 pulse 2 A testing.

R_i

Positive Supply Transient

(e.g. ISO7637 pulse 2a/3b)

(1)

VBB

V_DS

Clamp

(3)

(2)

Controller

VBB

Clamp

VOUT

Load

GND

图 33. Current Path During Supply Voltage Transient

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Feature Description (接下页)

9.3.1.3.1 Load Dump

The TPS1HB08-Q1 device is tested according to ISO 16750-2:2010(E) suppressed load dump pulse. The device

supports up to 40-V load dump transient and will maintain normal operation during the load dump pulse. If the

switch is enabled, it will stay enabled and if the switch is disabled, it will stay disabled.

9.3.1.3.2 Driving Inductive Loads

When switching off an inductive load, the inductor may impose a negative voltage on the output of the switch.

The TPS1HB08-Q1 includes a voltage clamp to limit voltage across the FET. The maximum acceptable load

inductance is a function of the device robustness. With a 5 mH load, the device can withstand one pulse of 95

mJ inductive dissipation at 125°C and can withstand 56 mJ of one million inductive repetitive pulses with a 10 Hz

repetitive pulse. If the application parameters exceed this device limit, it is necessary to use a protection device

like a freewheeling diode to dissipate the energy stored in the inductor.

For more information on driving inductive loads, refer to TI's How To Drive Inductive, Capacitive, and Lighting

Loads With Smart High Side Switches application report.

9.3.1.4 Reverse Battery

In the reverse battery condition, the switch will automatically be enabled regardless of the state of EN to prevent

excess power dissipation inside the MOSFET body diode. In many applications (for example, resistive loads), the

full load current may be present during reverse battery. In order to activate the automatic switch on feature, all

NC pins must be grounded to IC ground.

There are two options for blocking reverse current in the system. The first option is to place a blocking device

(FET or diode) in series with the battery supply, blocking all current paths. The second option is to place a

blocking diode in series with the GND node of the high-side switch. This method will protect the controller portion

of the switch (path 2), but it will not prevent current from flowing through the load (path 3). The diode used for the

second option may be shared amongst multiple high-side switches.

Path 1 shown in 图 34 is blocked inside of the device.

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Feature Description (接下页)

Reverse blocking

FET or diode

Option 1

BAT

VBB

µC

VDD

(3)

VOUT

(2)

Controller

GPIO

VBB

Clamp

Load

RPROT

(1)

GND

Option 2

13.5V

图 34. Current Path During Reverse Battery

For more information on reverse battery protection, refer to TI's Reverse Battery Protection for High Side

Switches application note.

9.3.1.5 Fault Event – Timing Diagrams - Version A and B

注

All timing diagrams assume that the SEL1 pin is low.

The LATCH, DIA_EN, and EN pins are controlled by the user. The timing diagrams

represent a possible use-case.

图 35 shows the immediate current limit switch off behavior. The diagram also illustrates the retry behavior. As

shown, the switch will remain latched off until the LATCH pin is low.

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Feature Description (接下页)

µC resets

the latch

LATCH

DIA_EN

I_SNSFH

Current

Sense

Current

Sense

High-z

SNS

VOUT

I_CL

t_RETRY

I_OUT

Switch follows EN. Normal

operation.

Load reaches limit.

Switch is Disabled.

图 35. Current Limit – Version A and B - Latched Behavior

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Feature Description (接下页)

图 36 shows the immediate current limit switch off behavior. In this example, LATCH is tied to GND; hence, the

switch will retry after the fault is cleared and t_RETRYhas expired.

DIA_EN

I_SNSFH

Current

Sense

Current

Sense

High-z

SNS

VOUT

I_CL

t_RETRY

I_OUT

Switch follows EN. Normal

operation.

Load reaches limit.

Switch is Disabled.

图 36. Current Limit - Version A and B - LATCH = 0

When the switch retries after a shutdown event, the SNS fault indication will remain until V_OUThas risen to V_BB

–

1.8 V. Once V_OUThas risen, the SNS fault indication is reset and current sensing is available. If there is a short-

to-ground and V_OUTis not able to rise, the SNS fault indication will remain indefinitely. 图 37 illustrates auto-retry

behavior and provides a zoomed-in view of the fault indication during retry.

注

图 37 assumes that t_RETRYhas expired by the time that T_Jreaches the hysteresis

threshold.

LATCH = 0 V and DIA_EN = 5 V

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Feature Description (接下页)

I_SNSFH

SNS

VOUT

T_ABS

T_HYS

T_J

I_SNSFH

I_SNSI

SNS

VOUT

VBB t 1.8 V

T_ABS

T_HYS

T_J

图 37. Fault Indication During Retry

9.3.1.6 Fault Event – Timing Diagrams - Version F

TPS1HB08-Q1 device version F will follow the same timing and fault diagrams as described in Fault Event –

Timing Diagrams - Version A and B, with the only difference being the behavior of the FLT pin. For each

diagram, if version F is used, it will indicate fault in the same cases as the SNS pin. In every diagram, when the

SNS pin outputs I_SNSFH, the FLT pin will go to an open drain state to indicate fault as well.

9.3.2 Diagnostic Mechanisms

9.3.2.1 VOUT Short-to-Battery and Open-Load

The TPS1HB08-Q1 is capable of detecting short-to-battery and open-load events regardless of whether the

switch is turned on or off, however the two conditions use different methods.

9.3.2.1.1 Detection With Switch Enabled

When the switch is enabled, the VOUT short-to-battery and open-load conditions can be detected by the current

sense feature. In both cases, the load current will be measured through the SNS pin as below the expected

value.

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Feature Description (接下页)

9.3.2.1.2 Detection With Switch Disabled

While the switch is disabled, if DIA_EN is high, an internal comparator will detect the condition of V_OUT. If the

load is disconnected (open load condition) or there is a short to battery the V_OUTvoltage will be higher than the

open load threshold (V_OL,off) and a fault is indicated on the SNS pin and the FLT pin on version F. An internal

pull-up of 1 MΩ is in series with an internal MOSFET switch, so no external component is required if a

completely open load must be detected. However, if there is significant leakage or other current draw even when

the load is disconnected, a lower value pull-up resistor and switch can be added externally to set the V_OUT

voltage above the V_OL,offduring open load conditions.

This figure assumes that the device ground and the load ground are at the same potential. In a real system, there

may be a ground shift voltage of 1 V to 2 V.

图 38. Short to Battery and Open Load Detection

The detection circuitry is only enabled when DIA_EN = HIGH and EN = LOW. If V_OUT> V_OL, the SNS pin will go

to the fault level, but if V_OUT< V_OLthere will be no fault indication. The fault indication will only occur if the SEL1

pin is low.

While the switch is disabled and DIA_EN is high, the fault indication mechanisms will continuously represent the

present status. For example, if V_OUTdecreases from greater than V_OLto less than V_OL, the fault indication is

reset. Additionally, the fault indication is reset upon the falling edge of DIA_EN or the rising edge of EN.

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Feature Description (接下页)

DIA_EN

I_SNSFH

High-z

SNS

t_OL2

Enabled

VOUT depends on external conditions

V_OL

VOUT

Switch is disabled and DIA_EN goes

high.

The condition is determined by the

internal comparator.

The open-load fault is

indicated.

Device standby

图 39. Open Load

9.3.2.2 SNS Output

The SNS output may be used to sense the load current if the SEL1 pin is low and there is no fault or device

temperature if the SEL1 pin is high and there is no fault. The sense circuit will provide a current that is

proportional to the selected parameter. This current will be sourced into an external resistor to create a voltage

that is proportional to the selected parameter. This voltage may be measured by an ADC or comparator. In

addition, the SNS pin can be used to measure the FET temperature.

To ensure accurate sensing measurement, the sensing resistor should be connected to the same ground

potential as the μC ADC.

表 3. Analog Sense Transfer Function

PARAMETER

Load current

TRANSFER FUNCTION

I_SNSI= I_OUT/ K_SNS= I_OUT/ 5000

I_SNST= (T_J– 25°C) × dI_SNST/ dT + 0.85

Device temperature

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The SNS output will also be used to indicate system faults. I_SNSwill go to the predefined level, I_SNSFH, when there

is a fault. I_SNSFH, dI_SNST/dT, and K_SNSare defined in the Specifications section.

Device version F does not have the capability to measure device temperature, so can only measure load current.

9.3.2.2.1 R_SNSValue

The following factors should be considered when selecting the R_SNSvalue:

•

Current sense ratio (K_SNS)

Largest and smallest diagnosable load current required for application operation

Full-scale voltage of the ADC

Resolution of the ADC

For an example of selecting R_ISNSvalue, reference R_ILIMCalculation in the applications section of this datasheet.

9.3.2.2.1.1 High Accuracy Load Current Sense

In many automotive modules, it is required that the high-side switch provide diagnostic information about the

downstream load. With more complex loads, high accuracy sensing is required. A few examples follow:

•

LED lighting: In many architectures, the body control module (BCM) must be compatible with both

incandescent bulbs and also LED modules. The bulb may be relatively simple to diagnose. However, the LED

module will consume less current and also can include multiple LED strings in parallel. The same BCM is

used in both cases, so the high-side switch can accurately diagnose both load types.

•

Solenoid protection: Often solenoids are precisely controlled by low-side switches. However, in a fault

event, the low-side switch cannot disconnect the solenoid from the power supply. A high-side switch can be

used to continuously monitor several solenoids. If the system current becomes higher than expected, the

high-side switch can disable the module.

9.3.2.2.1.2 SNS Output Filter

To achieve the most accurate current sense value, it is recommended to filter the SNS output. There are two

methods of filtering:

•

Low-Pass RC filter between the SNS pin and the ADC input. This filter is illustrated in 图 43 with typical

values for the resistor and capacitor. The designer should select a C_SNScapacitor value based on system

requirements. A larger value will provide improved filtering but a smaller value will allow for faster transient

response.

•

The ADC and microcontroller can also be used for filtering. It is recommended that the ADC collects several

measurements of the SNS output. The median value of this data set should be considered as the most

accurate result. By performing this median calculation, the microcontroller can filter out any noise or outlier

data.

9.3.2.3 Fault Indication and SNS Mux

The following faults will be communicated through the SNS output:

•

Switch shutdown, due to:

–

Thermal Shutdown

Current limit

•

Open-Load and V_OUTshorted-to-battery

Open-load and Short-to-battery are not indicated while the switch is enabled, although these conditions can still

be detected through the sense current. Hence, if there is a fault indication while the channel is enabled, then it

must be either due to an overcurrent or overtemperature event.

The SNS pin will only indicate the fault if the SEL1 pins is low. When the SEL1 pin is high and the device is set

to measure temperature, the pin will be measuring the channel FET temperature.

For device version F, the FLT pin will pull low when the device is in any of these fault states.

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表 4. Device Version A/B SNS Mux

INPUTS

OUTPUTS

SNS

DIA_EN

SEL1

FAULT DETECT⁽¹⁾

High-z

Output current

Device temperature

I_SNSFH

Device temperature

For device version F, the SEL1 pin has no functionality so the device cannot output a temperature sense current.

In this case, SEL1 should be connected to ground through an R_PROTresistor and the SNS behavior will follow the

table below.

表 5. Device Version F SNS Mux

INPUTS

OUTPUTS

DIA_EN

SEL1

FAULT DETECT⁽¹⁾

SNS

High-z

FLT⁽²⁾

High-z

Output current

I_SNSFH

High-z

Open-drain

9.3.2.4 Resistor Sharing

Multiple high-side devices may use the same SNS resistor as shown in 图 40. This reduces the total number of

passive components in the system and the number of ADC terminals that are required of the microcontroller.

Microcontroller

GPIO

DIA_EN

Switch 1

Switch 2

Switch 3

Switch 4

SNS

GPIO

ADC

RPROT

CSNS

RSNS

图 40. Sharing R_SNSAmong Multiple Devices

(1) Fault Detect encompasses multiple conditions:

(a) Switch shutdown and waiting for retry

(b) Open Load and Short To Battery

(1) Fault Detect encompasses multiple conditions:

(a) Switch shutdown and waiting for retry

(b) Open Load / Short To Battery

(2) Version F Only

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9.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing

Some applications will operate with a high-frequency, low duty-cycle PWM or require fast settling of the SNS

output. For example, a 250 Hz, 5% duty cycle PWM will have an on-time of only 200 µs that must be

accommodated. The micro-controller ADC may sample the SNS signal after the defined settling time t_SNSION3

图 41. Current Sensing in Low-Duty Cycle Applications

9.4 Device Functional Modes

During typical operation, the TPS1HB08-Q1 can operate in a number of states that are described below and

shown as a state diagram in 图 42.

9.4.1 Off

Off state occurs when the device is not powered.

9.4.2 Standby

Standby state is a low-power mode used to reduce power consumption to the lowest level. Diagnostic

capabilities are not available in Standby mode.

9.4.3 Diagnostic

Diagnostic state may be used to perform diagnostics while the switch is disabled.

9.4.4 Standby Delay

The Standby Delay state is entered when EN and DIA_EN are low. After t_STBY, if the EN and DIA_EN pins are

still low, the device will go to Standby State.

9.4.5 Active

In Active state, the switch is enabled. The diagnostic functions may be turned on or off during Active state.

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Device Functional Modes (接下页)

9.4.6 Fault

The Fault state is entered if a fault shutdown occurs (thermal shutdown or current limit). After all faults are

cleared, the LATCH pin is low, and the retry timer has expired, the device will transition out of Fault state. If the

EN pin is high, the switch will re-enable. If the EN pin is low, the switch will remain off.

VBB < UVLO

OFF

ANY STATE

VBB > UVLO

EN = Low

DIA_EN = Low

t > t_STBY

STANDBY

EN = Low

DIA_EN = High

EN = Low

DIA_EN = Low

EN = High

DIA_EN = X

DIAGNOSTIC

STANDBY DELAY

EN = Low

DIA_EN = High

EN = Low

DIA_EN = High

EN = High

DIA_EN = X

ACTIVE

EN = Low

DIA_EN = Low

EN = High

DIA_EN = X

!OT_ABS & !OT_REL & !ILIM

& LATCH = Low & t_RETRY

expired

OT_ABS || OT_REL ||

ILIM

FAULT

图 42. State Diagram

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10 Application and Implementation

注

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

10.1 Application Information

图 43 shows the schematic of a typical application for version A or B of the TPS1HB08-Q1. It includes all

standard external components. This section of the datasheet discusses the considerations in implementing

commonly required application functionality. Version F of the device will replace the ILIM pin with the open drain

FLT pin. In this case, the FLT pin must be connected to a 5 V rail through a 10 kΩ pull up resistor.

C_VBB1C_VBB2

VBB

DIA_EN

SEL1

R_PROT

BAT

R_PROT

GND

R_GND

D_GND

(1)

R_PROT

Microcontroller

(1)

LATCH

R_PROT

VBB

Optional

C_GND

Load

VOUT

R_ILIM

C_OUT

ILIM

SNS

Legend

ADC

R_PROT

Chassis GND

Module GND

Device GND

R_SNS

C_SNS

(1) With the ground protection network, the

device ground will be offset relative to the

microcontroller ground.

With the ground protection network, the device ground will be offset relative to the microcontroller ground.

图 43. System Diagram

表 6. Recommended External Components

COMPONENT

R_PROT

R_SNS

TYPICAL VALUE

15 kΩ

PURPOSE

Protect microcontroller and device I/O pins

1 kΩ

Translate the sense current into sense voltage

Low-pass filter for the ADC input

C_SNS

100 pF - 10 nF

4.7 kΩ

R_GND

Stabilize GND potential during turn-off of inductive load

Protects device during reverse battery

Set current limit threshold

D_GND

BAS21 Diode

5 kΩ - 25 kΩ

R_ILIM

Filtering of voltage transients (for example, ESD, ISO7637-2) and improved

emissions

C_VBB1

4.7 nF to Device GND

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Application Information (接下页)

表 6. Recommended External Components (接下页)

COMPONENT

C_VBB2

TYPICAL VALUE

220 nF to Module GND Stabilize the input supply and filter out low frequency noise.

220 nF Filtering of voltage transients (for example, ESD, ISO7637-2)

PURPOSE

C_OUT

10.1.1 Ground Protection Network

As discussed in the Reverse Battery section, D_GNDmay be used to prevent excessive reverse current from

flowing into the device during a reverse battery event. Additionally, R_GNDis placed in parallel with D_GNDif the

switch is used to drive an inductive load. The ground protection network (D_GNDand R_GND) may be shared

amongst multiple high-side switches.

A minimum value for R_GNDmay be calculated by using the absolute maximum rating for I_GND. During the reverse

battery condition, I_GND= V_BB/ R_GND

R_GND≥ V_BB/ I_GND

•

Set V_BB= –13.5 V

Set I_GND= –50 mA (absolute maximum rating)

R_GND≥ –13.5 V / –50 mA = 270 Ω

(2)

In this example, it is found that R_GNDmust be at least 270 Ω. It is also necessary to consider the power

dissipation in R_GNDduring the reverse battery event:

P_RGND= V_BB²/ R_GND

(3)

P_RGND= (13.5 V)²/ 270 Ω = 0.675 W

In practice, R_GNDmay not be rated for such a high power. In this case, a larger resistor value should be selected.

10.1.2 Interface With Microcontroller

The ground protection network will cause the device ground to be at a higher potential than the module ground

(and microcontroller ground). This offset will impact the interface between the device and the microcontroller.

Logic pin voltage will be offset by the forward voltage of the diode. For input pins (for example, EN), the designer

must consider the V_IHspecification of the switch and the V_OHspecification of the microcontroller. For a system

that does not include D_GND, it is required that V_OH> V_IH. For a system that does include D_GND, it is required that

V_OH> (V_IH+ V_F). V_Fis the forward voltage of D_GND

The sense resistor, R_SNS, should be terminated to the microcontroller ground. In this case, the ADC can

accurately measure the SNS signal even if there is an offset between the microcontroller ground and the device

ground.

10.1.3 I/O Protection

R_PROTis used to protect the microcontroller I/O pins during system-level voltage transients such as ISO pulses or

reverse battery. The SNS pin voltage can exceed the ADC input pin maximum voltage if the fault or saturation

current causes a high enough voltage drop across the sense resistor. If that can occur in the design (for

example, by switching to a high value R_SNSto improve ADC input level), then an appropriate external clamp has

to be designed to prevent a high voltage at the SNS output and the ADC input.

10.1.4 Inverse Current

Inverse current occurs when 0 V < V_BB< V_OUT. In this case, current may flow from V_OUTto V_BB. Inverse current

cannot be caused by a purely resistive load. However, a capacitive or inductive load can cause inverse current.

For example, if there is a significant amount of load capacitance and the V_BBnode has a transient droop, V_OUT

may be greater than V_BB

The TPS1HB08-Q1 will not detect inverse current. When the switch is enabled, inverse current will pass through

the switch. When the switch is disabled, inverse current may pass through the MOSFET body diode. The device

will continue operating in the normal manner during an inverse current event.

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10.1.5 Loss of GND

The ground connection may be lost either on the device level or on the module level. If the ground connection is

lost, the switch will be disabled. If the switch was already disabled when the ground connection was lost, the

switch will remain disabled. When the ground is reconnected, normal operation will resume.

10.1.6 Automotive Standards

The TPS1HB08-Q1 is designed to be protected against all relevant automotive standards to ensure reliable

operations when connected to a 12-V automotive battery.

10.1.6.1 ISO7637-2

The TPS1HB08-Q1 is tested according to the ISO7637-2:2011 (E) standard. The test pulses are applied both

with the switch enabled and disabled. The test setup includes only the DUT and minimal external components:

C_VBB, C_OUT, D_GND, and R_GND

Status II is defined in ISO 7637-1 Function Performance Status Classification (FPSC) as: “The function does not

perform as designed during the test but returns automatically to normal operation after the test”. See 表 7 for

ISO7637-2:2011 (E) expected results.

表 7. ISO7637-2:2011 (E) Results

TEST PULSE SEVERITY LEVEL WITH

STATUS II FUNCTIONAL PERFORMANCE

MINIMUM NUMBER

OF PULSES OR TEST

TIME

BURST CYCLE / PULSE REPETITION TIME

TEST

PULSE

LEVEL

MIN

0.5 s

0.20

MAX

2a⁽¹⁾

III

–112 V

+55 V

+10 V

–220 V

+150 V

500 pulses

10 pulses

1 hour

5 s

0.5 s

90 ms

5 s

100 ms

1 hour

(1) 1 µF capacitance on C_VBBis required for passing level 3 ISO7637 pulse 2 A.

10.1.6.2 TPS1HB08-Q1 AEC-Q100-012 Short Circuit Reliability

The TPS1HB08-Q1 is tested according to the AEC-Q100-012 Short Circuit Reliability standard. This test is

performed to demonstrate the robustness of the device against V_OUTshort-to-ground events. Test conditions and

test procedures are summarized in . For further details, refer to the AEC-Q100-012 standard document.

Test conditions:

•

LATCH = 0 V

10 units from 3 separate lots for a total of 30 units.

L_supply= 5 μH, R_supply= 10 mΩ

V_BB= 14 V

Test procedure:

•

Parametric data is collected on each unit pre-stress

Each unit is enabled into a short-circuit with the required short circuit cycles or duration as specified

Functional testing is performed on each unit post-stress to verify that the part still operates as expected

The cold repetitive test is run at 85ºC which is the worst case condition for the device to sustain a short circuit.

The cold repetitive test refers to the device being given time to cool down between pulses, rather than being run

at a cold temperature. The load short circuit is the worst case situation, since the energy stored in the cable

inductance can cause additional harm. The fast response of the device ensures current limiting occurs quickly

and at a current close to the load short condition. In addition, the hot repetitive test is performed as well.

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表 8. AEC-Q100-012 Test Results

DEVICE

VERSION

NO. OF CYCLES /

NO. OF

UNITS

NO. OF

FAILS

TEST

LOCATION OF SHORT

DURATION

Cold Repetitive - Long

Pulse

Load Short Circuit, L_short= 5 μH, R_short

50 mΩ, T_A= -40ºC

100 k cycles

Cold Repetitive - Long

Pulse - Load Short⁽¹⁾

Load Short Circuit, L_short= 5 μH, R_short

200 mΩ, T_A= 85ºC

100 k cycles

100 hours

Cold Repetitive - Long

Pulse - Load Short⁽¹⁾

Load Short Circuit, L_short= 5 μH, R_short

200 mΩ, T_A= -40ºC

Cold Repetitive - Long

Pulse - Terminal Short

Load Short Circuit, L_short< 1 μH, R_short

20 mΩ, T_A= 85ºC

Load Short Circuit, L_short= 5 μH, R_short

100 mΩ, T_A= 25ºC

Hot Repetitive - Long Pulse

(1) For Cold Repetitive short, 200 mΩ R_shortis used so that the device is at a higher junction temperature before the short circuit event,

increasing the harshness of the test.

10.1.7 Thermal Information

When outputting current, the TPS1HB08-Q1 will heat up due to the power dissipation. The transient thermal

impedance curve can be used to determine the device temperature during a pulse of a given length. This Z_θJA

value corresponds to a JEDEC standard 2s2p thermal test PCB with thermal vias.

0.0001

0.0010.002 0.005 0.01 0.02 0.05 0.1 0.20.3 0.5

Time (s)

3 4 567 10 20 30 50 100 200

500 1000

Ther

图 44. TPS1HB08-Q1 Transient Thermal Impedance

10.2 Typical Application

This application example demonstrates how the TPS1HB08-Q1 device can be used to power resistive heater

loads in automotive seats. In this example, we consider a heater load that is powered by the device. This is just

one example of the many applications where this device can fit.

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Typical Application (接下页)

图 45. Block Diagram for Powering Heater Load

10.2.1 Design Requirements

For this design example, use the input parameters shown in 表 9.

表 9. Design Parameters

DESIGN PARAMETER

V_BB

EXAMPLE VALUE

13.5 V

Load - Heater

Load Current Sense

I_LIM

130 W max

100 mA to 20 A

12 A

Ambient temperature

R_θJA

70°C

32.6°C/W (depending on PCB)

Device Version

10.2.2 Detailed Design Procedure

10.2.2.1 Thermal Considerations

The 130 W heater load will cause a DC current in the channel under maximum load power condition of around

9.6 A. Therefore, this current at 13.5 V will assume worst case heating.

Power dissipation in the switch is calculated in 公式 4. R_ONis assumed to be 16 mΩ because this is the

maximum specification at high temperature. In practice, R_ONwill almost always be lower.

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P_FET= I²× R_ON

P_FET= (9.6 A)²× 16 mΩ = 1.47 W

(4)

(5)

This means that the maximum FET power dissipation is 1.47 W. The junction temperature of the device can be

calculated using 公式 6 and the R_θJAvalue from the Specifications section.

T_J= T_A+ R_θJA× P_FET

(6)

T_J= 70°C + 32.6°C/W × 1.47 W = 117.9°C

The maximum junction temperature rating for the TPS1HB08-Q1 is T_J= 150°C. Based on the above example

calculation, the device temperature will stay below the maximum rating even at this high level of current.

10.2.2.2 R_ILIMCalculation

In this application, the TPS1HB08-Q1 must allow for the maximum DC current with margin but minimize the

energy in the switch during a fault condition by minimizing the current limit. For this application, the best I_LIMset

point is approximately 12 A. 公式 7 allows you to calculate the R_ILIMvalue that is placed from the I_LIMpins to V_BB

R_ILIMis calculated in kΩ.

R_ILIM= K_CL/ I_CL

(7)

(8)

Because this device is version A, the K_CLvalue in the Specifications section is 160 A × kΩ.

R_ILIM= 160 (A × kΩ) / 12 A = 13.3 kΩ

For a I_LIMof 12 A, the R_ILIMvalue should be set at around 13.3 kΩ

10.2.2.3 Diagnostics

If the resistive heating load is disconnected (heater malfunction), an alert is desired. Open-load detection can be

performed in the switch-enabled state with the current sense feature of the TPS1HB08-Q1 device. Under open

load condition, the current in the SNS pin will be the fault current and the can be detected from the sense voltage

measurement.

10.2.2.3.1 Selecting the R_ISNSValue

表 10 shows the requirements for the load current sense in this application. The K_SNSvalue is specified for the

device and can be found in the Specifications section.

表 10. R_SNSCalculation Parameters

PARAMETER

EXAMPLE VALUE

Current Sense Ratio (K_SNS

)

5000

20 A

Largest diagnosable load current

Smallest diagnosable load current

Full-scale ADC voltage

100 mA

5 V

ADC resolution

10 bit

The load current measurement requirements of 20 A ensures that even in the event of a overcurrent surpassing

the set current limit, the MCU can register and react by shutting down the TPS1HB08-Q1, while the low level of

100 mA allows for accurate measurement of low load currents.

The R_SNSresistor value should be selected such that the largest diagnosable load current puts V_SNSat about

95% of the ADC full-scale. With this design, any ADC value above 95% can be considered a fault. Additionally,

the R_SNSresistor value should ensure that the smallest diagnosable load current does not cause V_SNSto fall

below 1 LSB of the ADC. With the given example values, a 1.2-kΩ sense resistor satisfies both requirements

shown in 表 11.

表 11. V_SNSCalculation

LOAD (A)

SENSE RATIO

5000

I_SNS(mA)

R_SNS(Ω)

1200

V_SNS(V)

0.024

% of 5-V ADC

0.5%

0.1

0.02

5000

1200

4.800

96.0%

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10.3 Typical Application

This application example demonstrates how the TPS1HB08-Q1 device can be used to power bulb loads in

automotive headlights. In this example, we consider a 65 W bulb that is powered by the device. This is just one

example of the many applications where this device can fit.

12 V Battery/

Cap Bank

Temperature

Chamber

DIA_EN

VBB

65 mꢀ

~2m 18 AWG

SEL1

BULB LOAD

VOUT

SNS

ILIM

µC

LATCH

GND

10mꢀ

~2m 8 AWG

图 46. Block Diagram for Driving Bulb Load

10.3.1 Design Requirements

For this design example, use the input parameters shown in 表 12.

表 12. Design Parameters

DESIGN PARAMETER

V_BB

EXAMPLE VALUE

16 V

65 W W max

94 A

Load - Bulb

Fixed I_LIM

Ambient temperature

Bulb Temperature in Chamber

25°C

-40°C

Cable Impedance from Device to

Bulb

65 mΩ

Device Version

10.3.2 Detailed Design Procedure

The typical bulb test setup is where the device is at 25°C and the bulb is in a temperature chamber at -40°C. The

bulb needs to be kept at -40°C so that the impedance is very low and the inrush current will be the highest. The

impedance of the cables is important because it will change the inrush current of the bulb as well. The F version

of the TPS1HB08-Q1 has a very high fixed current limit so that the inrush current of the bulb can be passed

without limitation.

TPS1HB08-Q1

www.ti.com.cn

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

10.3.3 Application Curves

图 47. TPS1HB08-Q1 Version F 65W Bulb Turn On

11 Power Supply Recommendations

The TPS1HB08-Q1 device is designed to operate in a 12-V automotive system. The nominal supply voltage

range is 6 V to 18 V as measured at the V_BBpin with respect to the GND pin of the device. In this range the

device meets full parametric specifications as listed in the Electrical Characteristics table. The device is also

designed to withstand voltage transients beyond this range. When operating outside of the nominal voltage range

but within the operating voltage range, the device will exhibit normal functional behavior. However, parametric

specifications may not be specified outside the nominal supply voltage range.

表 13. Operating Voltage Range

V_BBVoltage Range

Note

Transients such as cold crank and start-stop, functional operation

are specified but some parametric specifications may not apply. The

device is completely short-circuit protected up to 125°C

3 V to 6 V

Nominal supply voltage, all parametric specifications apply. The

device is completely short-circuit protected up to 125°C

6 V to 18 V

Transients such as jump-start and load-dump, functional operation

specified but some parametric specifications may not apply

18 V to 40 V

TPS1HB08-Q1

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

www.ti.com.cn

12 Layout

12.1 Layout Guidelines

To achieve optimal thermal performance, connect the exposed pad to a large copper pour. On the top PCB layer,

the pour may extend beyond the package dimensions as shown in the example below. In addition to this, it is

recommended to also have a V_BBplane either on one of the internal PCB layers or on the bottom layer.

Vias should connect this plane to the top V_BBpour.

Ensure that all external components are placed close to the pins. Device current limiting performance can be

harmed if the R_ILIMis far from the pins and extra parasitics are introduced.

12.2 Layout Example

The layout example is for device versions A/B.For device version F, the ILIM pin will be replaced by the FLT pin.

图 48. 16-PWP Layout Example

TPS1HB08-Q1

www.ti.com.cn

ZHCSJP9C –MAY 2019–REVISED JANUARY 2020

13 器件和文档支持

13.1 文档支持

13.1.1 相关文档

请参阅如下相关文档：

•

TI《如何利用智能高侧开关驱动电感、电容和照明负载》

TI《智能电源开关的短路可靠性测试》

TI《适用于高侧开关的反向电池保护》

TI《智能电源开关的可调电流限制》

13.2 接收文档更新通知

要接收文档更新通知，请导航至 ti.com.cn 上的器件产品文件夹。单击右上角的通知我进行注册，即可每周接收产

品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。

13.3 支持资源

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

13.4 商标

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

13.5 静电放电警告

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可

能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可

能会导致器件与其发布的规格不相符。

13.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

14 机械、封装和可订购信息

以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且

不会对此文档进行修订。如需获取此数据表的浏览器版本，请查阅左侧的导航栏。

PACKAGE OPTION ADDENDUM

www.ti.com

28-Sep-2021

PACKAGING INFORMATION

Orderable Device

Status Package Type Package Pins Package

Eco Plan

Lead finish/

Ball material

MSL Peak Temp

Op Temp (°C)

Device Marking

Samples

Drawing

Qty

(1)

(2)

(3)

(4/5)

(6)

TPS1HB08AQPWPRQ1

TPS1HB08BQPWPRQ1

TPS1HB08FQPWPRQ1

ACTIVE

HTSSOP

PWP

3000

RoHS-Exempt

& Green

NIPDAU

Level-3-260C-168HRS

-40 to 125

1HB08A

ACTIVE

PWP

RoHS-Exempt

& Green

NIPDAU

1HB08B

1HB08F

PWP

RoHS-Exempt

& Green

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

⁽³⁾MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

⁽⁴⁾There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

⁽⁵⁾Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6)

Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two

lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

28-Sep-2021

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

25-May-2023

TAPE AND REEL INFORMATION

REEL DIMENSIONS

TAPE DIMENSIONS

Reel

Diameter

Cavity

A0 Dimension designed to accommodate the component width

B0 Dimension designed to accommodate the component length

K0 Dimension designed to accommodate the component thickness

Overall width of the carrier tape

P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2

Q3 Q4

Q1 Q2

Q3 Q4

User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TPS1HB08AQPWPRQ1 HTSSOP PWP

TPS1HB08BQPWPRQ1 HTSSOP PWP

TPS1HB08FQPWPRQ1 HTSSOP PWP

3000

330.0

12.4

6.9

5.6

1.6

8.0

12.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

25-May-2023

TAPE AND REEL BOX DIMENSIONS

Width (mm)

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TPS1HB08AQPWPRQ1

TPS1HB08BQPWPRQ1

TPS1HB08FQPWPRQ1

HTSSOP

PWP

3000

350.0

367.0

350.0

367.0

43.0

38.0

Pack Materials-Page 2

PACKAGE OUTLINE

PWP0016M

PowerPAD^TMTSSOP - 1.2 mm max height

SMALL OUTLINE PACKAGE

6.6

6.2

TYP

PIN 1 INDEX

AREA

0.1 C

SEATING

PLANE

14X 0.65

5.1

4.9

4.55

NOTE 3

0.30

16X

4.5

4.3

0.19

0.1

C A B

SEE DETAIL A

(0.15) TYP

2X 0.6 MAX

NOTE 5

THERMAL

PAD

2X 0.31 MAX

NOTE 5

0.25

1.2 MAX

GAGE PLANE

3.37

2.48

0.15

0.05

0.75

0.50

0 -8

DETAIL A

TYPICAL

0.45

0.25

NOTE 5

0.32

0.16

NOTE 5

2X (0.13)

2.78

2.20

4223886/B 09/2019

PowerPAD is a trademark of Texas Instruments.

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

4. Reference JEDEC registration MO-153.

5. Features may differ or may not be present.

www.ti.com

EXAMPLE BOARD LAYOUT

PWP0016M

PowerPAD^TMTSSOP - 1.2 mm max height

SMALL OUTLINE PACKAGE

(3.4)

NOTE 9

SOLDER MASK

DEFINED PAD

(2.78)

16X (1.5)

METAL COVERED

BY SOLDER MASK

SYMM

16X (0.45)

(1.2) TYP

(R0.05) TYP

SYMM

(3.37)

(5)

NOTE 9

(0.6)

14X (0.65)

(

0.2) TYP

VIA

(1.2) TYP

SEE DETAILS

(5.8)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE: 10X

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

OPENING

METAL

EXPOSED METAL

0.07 MAX

ALL AROUND

0.07 MIN

ALL AROUND

NON-SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

15.000

SOLDER MASK DETAILS

4223886/B 09/2019

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

8. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature

numbers SLMA002 (www.ti.com/lit/slma002) and SLMA004 (www.ti.com/lit/slma004).

9. Size of metal pad may vary due to creepage requirement.

10. Vias are optional depending on application, refer to device data sheet. It is recommended that vias under paste be filled, plugged

or tented.

www.ti.com

EXAMPLE STENCIL DESIGN

PWP0016M

PowerPAD^TMTSSOP - 1.2 mm max height

SMALL OUTLINE PACKAGE

(2.78)

BASED ON

0.125 THICK

STENCIL

16X (1.5)

METAL COVERED

BY SOLDER MASK

16X (0.45)

(R0.05) TYP

SYMM

(3.37)

BASED ON

0.125 THICK

STENCIL

14X (0.65)

SYMM

(5.8)

SEE TABLE FOR

DIFFERENT OPENINGS

FOR OTHER STENCIL

THICKNESSES

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE: 10X

STENCIL

THICKNESS

SOLDER STENCIL

OPENING

0.1

3.11 X 3.77

2.78 X 3.37 (SHOWN)

2.54 X 3.08

0.125

0.15

0.175

2.35 X 2.85

4223886/B 09/2019

NOTES: (continued)

11. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

12. Board assembly site may have different recommendations for stencil design.

www.ti.com

重要声明和免责声明

TI“按原样”提供技术和可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资源，

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您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成

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TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

TPS1HB08-Q1 [TI]

相关型号：

TPS1HB08AQPWPRQ1

TPS1HB08BQPWPRQ1

TPS1HB08FQPWPRQ1

TPS1HB16-Q1

TPS1HB16AQPWPRQ1

TPS1HB16BQPWPRQ1

TPS1HB16FQPWPRQ1

TPS1HB35-Q1

TPS1HB35-Q1_V01

TPS1HB35AQPWPRQ1

TPS1HB35BQPWPRQ1

TPS1HB35CQPWPRQ1