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TPS22958, TPS22958N

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

TPS22958x 具有可调节上升时间的 5.5V、4A/6A、14mΩ 负载开关

1 特性

2 应用

1

•

集成 N 通道负载开关

输入电压范围：0.6V 至 5.5V

VBIAS 电压范围：2.5V 至 5.5V

R_ON电阻

•

电子销售点 (EPOS)

•

工厂自动化/控制

楼宇自动化

打印机

波峰焊制造

–

V_IN= 5V (V_BIAS= 5V) 时，R_ON= 14mΩ

V_IN= 3.3V (V_BIAS= 5V) 时，R_ON= 13mΩ

V_IN= 1.8V (V_BIAS= 5V) 时，R_ON= 13mΩ

3 说明

TPS22958x 是一款具有可调节上升时间的小型单通道

负载开关。此器件包含一个可在 0.6V 至 5.5V 输入电

压范围内运行的 N 通道 MOSFET，并且可支持最大

4A（DGK 封装）或 6A（DGN 封装）的持续电流。

此开关可由一个打开/关闭输入控制，此输入可与低压

控制信号直接对接。

•

4A 最大持续开关电流（DGK 封装）

6A 最大持续开关电流（DGN 封装）

低静态电流

–

V_BIAS= 5V 时为 55µA

•

低控制输入阈值支持使用

1.2V/1.8V/2.5V/3.3V 逻辑电路

可调节上升时间⁽¹⁾

快速输出放电 (QOD)⁽²⁾

•

该器件的上升时间可从外部进行控制，从而避免涌入电

流。在 CT 引脚上连接一个电容即可更改上升时间：

电容值越大，上升时间越长。 TPS22958x 提供 DGK

和 DGN 两种节省空间的封装，其中 DGN 封装带有支

持高功率耗散的散热焊盘，而 DGN 封装则不带有散热

焊盘。器件在自然通风环境下的额定运行温度范围为 -

40℃ 至 105℃。

DGK 8 引脚封装：

–

3.0mm x 4.9mm x 1.1mm，0.65mm 间距

带有散热焊盘的 DGK 8 引脚封装：

3.0mm x 4.9mm x 1.1mm，0.65mm 间距

•

–

静电放电 (ESD) 性能经测试符合 JEDEC STD 标

准。

器件信息⁽¹⁾

–

2kV 人体模型 (HBM) 和 1kV 器件充电模型

器件编号

TPS22958x

封装（引脚）

DGK (8)

DGN (8)

封装尺寸（标称值）

3.00mm x 4.90mm

(CDM)

•

闩锁性能超出 100mA，符合 JESD 78 II 类规范的

要求

•

通用输入输出 (GPIO) 使能 - 高电平有效

(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。

(1)

有关 CT 值与上升时间的关系，请参见Adjustable Rise Time

部分

(2)

TPS22958N 器件不具备该特性。

典型应用电路原理图

1

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

English Data Sheet: SLVSCX7

TPS22958, TPS22958N

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

www.ti.com.cn

1

2

3

4

5

6

7

特性.......................................................................... 1

应用.......................................................................... 1

说明.......................................................................... 1

修订历史记录 ........................................................... 2

Device Comparison Table..................................... 3

Pin Configuration and Functions......................... 3

Specifications......................................................... 4

7.1 Absolute Maximum Ratings ...................................... 4

7.2 ESD Ratings ............................................................ 4

7.3 Recommended Operating Conditions....................... 4

7.4 Thermal Information.................................................. 5

7.5 Electrical Characteristics (V_BIAS= 5 V)..................... 6

7.6 Electrical Characteristics (V_BIAS= 3.3 V).................. 7

7.7 Electrical Characteristics (V_BIAS= 2.5 V).................. 8

7.8 Switching Characteristics.......................................... 9

7.9 Typical DC Characteristics...................................... 10

7.10 Typical AC Characteristics.................................... 13

Parameter Measurement Information ................ 16

9

Detailed Description ............................................ 17

9.1 Overview ................................................................. 17

9.2 Functional Block Diagram ....................................... 17

9.3 Feature Description................................................. 17

9.4 Device Functional Modes........................................ 19

10 Application and Implementation........................ 20

10.1 Application Information.......................................... 20

10.2 Typical Application ................................................ 21

11 Power Supply Recommendations ..................... 24

12 Layout................................................................... 24

12.1 Layout Guidelines ................................................. 24

12.2 Layout Example .................................................... 25

13 器件和文档支持 ..................................................... 26

13.1 相关链接................................................................ 26

13.2 商标....................................................................... 26

13.3 静电放电警告......................................................... 26

13.4 术语表 ................................................................... 26

14 机械封装和可订购信息 .......................................... 26

8

4 修订历史记录

Changes from Original (January 2014) to Revision A

Page

•

完整版的最初发布版本。 ....................................................................................................................................................... 1

2

TPS22958, TPS22958N

www.ti.com.cn

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

5 Device Comparison Table

R_ONAT

DEVICE

QUICK OUTPUT

DISCHARGE

MAX OUTPUT

CURRENT

RISE TIME

ENABLE

VIN = VBIAS = 5V

TPS22958DGK

Adjustable

Yes

No

4 A

6 A

4 A

6 A

TPS22958DGN

14 mΩ

Active High

TPS22958NDGK

TPS22958NDGN

No

6 Pin Configuration and Functions

PACKAGE (TOP VIEW)

VIN

ON

1

2

3

4

8

7

6

5

VOUT

CT

VIN

ON

1

2

3

4

8

7

6

5

VOUT

CT

VBIAS

VIN

GND

VOUT

VBIAS

VIN

GND

VOUT

DGK Package

DGN Package

Pin Functions

I/O

DESCRIPTION

NO.

1, 4

2

NAME

Switch input. Bypass this input with a ceramic capacitor to GND. These pins should be tied together as

shown in Layout Information.

VIN

I

ON

Active-high switch control input. Do not leave floating.

Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 to 5.5 V. See

VIN and VBIAS Voltage Range .

3

VBIAS

5, 8

6

VOUT

GND

CT

O

—

O

Switch output

Ground

7

Switch slew rate control. Can be left floating.

Thermal

Pad⁽¹⁾

Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Layout Guidelines for

layout guidelines.

—

(1) Only available for the DGN package

3

TPS22958, TPS22958N

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

www.ti.com.cn

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature (unless otherwise noted)⁽¹⁾

(2)

MIN

–0.3

MAX

UNIT

V

V_IN

Input voltage

Bias voltage

Output voltage

ON voltage

6

V_BIAS

V_OUT

V_ON

–0.3

V

6

V

6

V

Maximum continuous switch current, T_A= 65°C (DGK Package)

Maximum continuous switch current, T_A= 75°C (DGN Package)

Maximum pulsed switch current, pulse <300 µs, 2% duty cycle (DGK Package)

Maximum pulsed switch current, pulse <300 µs, 2% duty cycle (DGN Package)

Maximum junction temperature

4

A

I_MAX

6

A

6

A

I_PLS

8

A

T_J

125

°C

T_stg

Storage temperature range

–65

150

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

±2000

V_(ESD)

Electrostatic discharge

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101⁽²⁾

±1000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

MIN

0.6

2.5

0

MAX

V_BIAS

5.5

UNIT

V

V_IN

Input voltage range

V_BIAS

V_ON

Bias voltage range

V

ON voltage range

5.5

V

V_OUT

V_{IH, ON}

V_{IL, ON}

T_A

Output voltage range

High-level input voltage, ON

Low-level input voltage, ON

Operating free-air temperature

Input capacitor

V_IN

V

V_BIAS= 2.5 to 5.5 V

1.2

0

5.5

V

0.5

V

(1)

–40

1⁽²⁾

105

°C

µF

C_IN

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the

maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package

in the application (R_θJA), as given by the following equation: T_A(max)= T_J(max)– (R_θJA× P_D(max)).

(2) Refer to the Application Information section.

4

TPS22958, TPS22958N

www.ti.com.cn

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

7.4 Thermal Information

TPS22958x

UNIT

THERMAL METRIC^{(1) (2)}

DGK

DGN

(8 PINS)

R_θJA

Junction-to-ambient thermal resistance

185.7

77.3

107.0

15.2

105.4

n/a

67.0

66.5

46.8

5.0

R_θJC(top)Junction-to-case (top) thermal resistance

R_θJB

ψ_JT

Junction-to-board thermal resistance

°C/W

Junction-to-top characterization parameter

Junction-to-board characterization parameter

ψ_JB

46.6

14.9

R_θJC(bot)Junction-to-case (bottom) thermal resistance

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.

5

TPS22958, TPS22958N

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

www.ti.com.cn

7.5 Electrical Characteristics (V_BIAS= 5 V)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature

–40°C ≤ T_A≤ 105°C and V_BIAS= 5 V. Typical values are for T_A= 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

T_A

MIN

TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

54

0.5

60

1

I_{Q, VBIAS}

V_BIASquiescent current

V_BIASshutdown current

I_OUT= 0, V_IN= V_ON= V_BIAS= 5 V

V_ON= 0 V, V_OUT= 0 V, V_BIAS= 5 V

µA

I_{SD, VBIAS}

1

0.5

8

V_IN= 5 V

10

3

0.1

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 0.6 V

4

0.07

0.05

0.04

2

I_{SD, VIN}

V_INshutdown current

V_ON= 0 V, V_OUT= 0 V, V_BIAS= 5 V

µA

3

1

2

1

2

I_ON

ON pin input leakage current

V_ON= 5.5 V, V_BIAS= 5 V

0.1

RESISTANCE CHARACTERISTICS

25°C

14

13

18

V_IN= 5 V

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

24

17

V_IN= 3.3 V

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.6 V

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

R_ON

ON-state resistance

I_OUT= –200 mA, V_BIAS= 5 V

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

20 mΩ

23

R_PD

Output pulldown resistance

V_IN= V_BIAS= 5 V, V_ON= 0 V, I_OUT= 10 mA

135

160

Ω

6

TPS22958, TPS22958N

www.ti.com.cn

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

7.6 Electrical Characteristics (V_BIAS= 3.3 V)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature

–40°C ≤ T_A≤ 105°C and V_BIAS= 3.3 V. Typical values are for T_A= 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

T_A

MIN

TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

23

0.3

27

0.7

3

I_{Q, VBIAS}

V_BIASquiescent current

V_BIASshutdown current

I_OUT= 0, V_IN= V_ON= V_BIAS= 3.3 V

V_ON= 0 V, V_OUT= 0 V, V_BIAS= 3.3 V

µA

I_{SD, VBIAS}

0.1

V_IN= 3.3 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 0.6 V

4

0.07

0.05

0.04

2

3

I_{SD, VIN}

V_INshutdown current

V_ON= 0 V, V_OUT= 0 V, V_BIAS= 3.3 V

µA

1

2

1

2

I_ON

ON pin input leakage current

V_ON= 5.5 V, V_BIAS= 3.3 V

0.1

RESISTANCE CHARACTERISTICS

25°C

14

13

18

V_IN= 3.3 V

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.6 V

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

24

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

R_ON

ON-state resistance

I_OUT= –200 mA, V_BIAS= 3.3 V

13

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

25°C

20 mΩ

23

13

17

-40°C to 85°C

-40°C to 105°C

20 mΩ

23

R_PD

Output pulldown resistance

V_IN= V_BIAS= 3.3 V, V_ON= 0 V, I_OUT= 10 mA

135

160

Ω

7

TPS22958, TPS22958N

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

www.ti.com.cn

7.7 Electrical Characteristics (V_BIAS= 2.5 V)

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature

–40 °C ≤ T_A≤ 105 °C and V_BIAS= 2.5 V. Typical values are for T_A= 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

T_A

MIN

TYP MAX UNIT

POWER SUPPLIES AND CURRENTS

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

-40°C to 85°C

-40°C to 105°C

14

0.2

17

0.5

3

I_{Q, VBIAS}

V_BIASquiescent current

V_BIASshutdown current

I_OUT= 0, V_IN= V_ON= V_BIAS= 2.5 V

V_ON= 0 V, V_OUT= 0 V, V_BIAS= 2.5 V

µA

I_{SD, VBIAS}

0.1

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.2 V

V_IN= 0.6 V

4

0.07

0.05

0.04

2

3

I_{SD, VIN}

V_INshutdown current (per channel)

ON pin input leakage current

V_ON= 0 V, V_OUT= 0 V, V_BIAS= 2.5 V

µA

1

2

1

2

I_ON

V_ON= 5.5 V, V_BIAS= 2.5 V

0.1

RESISTANCE CHARACTERISTICS

25°C

15

14

19

V_IN= 2.5 V

V_IN= 1.8 V

V_IN= 1.5 V

V_IN= 1.2 V

V_IN= 0.6 V

-40°C to 85°C

-40°C to 105°C

25°C

23 mΩ

26

18

-40°C to 85°C

-40°C to 105°C

25°C

22 mΩ

25

14

18

R_ON

ON-state resistance

I_OUT= –200 mA, V_BIAS= 2.5 V

-40°C to 85°C

-40°C to 105°C

25°C

22 mΩ

25

14

18

-40°C to 85°C

-40°C to 105°C

25°C

22 mΩ

25

13

18

-40°C to 85°C

-40°C to 105°C

22 mΩ

25

R_PD

Output pulldown resistance

V_IN= V_BIAS= 2.5 V, V_ON= 0 V, I_OUT= 10 mA

135

160

Ω

8

TPS22958, TPS22958N

www.ti.com.cn

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

7.8 Switching Characteristics

PARAMETER

TEST CONDITION

MIN

TYP

MAX UNIT

V_IN= V_ON= V_BIAS= 5 V, T_A= 25 °C

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

646

5

769

2

µs

t_F

t_D

280

V_IN= 0.6 V, V_ON= V_BIAS= 5 V, T_A= 25 ºC

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

303

91

126

7

µs

t_F

t_D

243

V_IN= 2.5 V, V_ON= 5 V, V_BIAS= 2.5V, T_A= 25 ºC

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

983

7

987

2

t_F

t_D

518

V_IN= 0.6 V, V_ON= 5 V, V_BIAS= 2.5 V, T_A= 25 ºC

t_ON

t_OFF

t_R

Turn-on time

Turn-off time

V_OUTrise time

V_OUTfall time

ON delay time

R_L= 10 Ω, C_L= 0.1 µF, CT = 1000 pF

611

77

305

7

t_F

t_D

468

9

TPS22958, TPS22958N

ZHCSDJ0A –FEBRUARY 2015–REVISED MARCH 2015

www.ti.com.cn

7.9 Typical DC Characteristics

80

70

60

50

40

30

20

10

65

63

61

59

57

55

53

51

49

47

45

-40°C

25°C

85°C

105°C

-40°C

25°C

85°C

105°C

2.5

3.0

3.5

4.0

4.5

5.0

5.5

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V_BIAS(V)

V_IN(V)

D001

D002

V_IN= V_BIAS

V_OUT= Open

V_ON= 5 V

V_BIAS= 5 V

V_ON= 5 V

V_OUT= Open

Figure 1. Quiescent Current vs V_BIAS

Figure 2. Quiescent Current vs V_IN

1.0

0.8

0.6

0.4

0.2

0.0

-40°C

25°C

85°C

-40°C

25°C

85°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

105°C

-0.2

0.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

1.0

2.0

3.0

4.0

5.0

6.0

V_BIAS(V)

V_IN(V)

D003

D004

V_IN= V_BIAS

V_OUT= 0 V

V_ON= 0 V

V_BIAS= 5 V

V_OUT= 0 V

V_ON= 0 V

Figure 3. Shutdown Current vs V_BIAS

Figure 4. V_INShutdown Current vs V_IN

20

18

16

14

12

10

8

20

18

16

14

12

10

8

6

4

VIN = 0.6V

VIN = 1.8V

VIN = 2.5V

VIN = 3.3V

VIN = 5V

2

0

-50

-25

0

25

50

75

100

125

-50

-25

0

25

50

75

100

125

Ambient Temperature (qC)

D005

D006

V_BIAS= 2.5 V

V_ON= 5 V

I_OUT= –200 mA

V_BIAS= 5 V

V_ON= 5 V

I_OUT= –200 mA

Figure 5. R_ONvs Temperature

Figure 6. R_ONvs Temperature

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Typical DC Characteristics (continued)

20

25

23

21

19

17

15

13

11

9

VIN = 0.6V

VIN = 3.3V

VIN = 5V

-40°C

19

18

17

16

15

14

13

12

11

10

25°C

85°C

105°C

7

5

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I_OUT(A)

V_IN(V)

D007

D008

V_BIAS= 5 V

V_ON= 5 V

T_A= 25°C

V_BIAS= 2.5 V

V_ON= 5V

I_OUT= –200 mA

Figure 7. R_ONvs I_OUT(DGN Package)

Figure 8. R_ONvs V_IN

25

16.0

15.5

15.0

14.5

14.0

13.5

13.0

12.5

12.0

-40°C

25°C

85°C

VBIAS = 2.5V

VBIAS = 3.3V

VBIAS = 5V

23

21

19

17

15

13

11

9

105°C

VBIAS = 5.5V

7

5

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V_IN(V)

D009

D012

V_BIAS= 5 V

V_ON= 5 V

I_OUT= –200 mA

T_A= 25°C

V_ON= 5 V

I_OUT= –200 mA

Figure 9. R_ONvs V_IN

Figure 10. R_ONvs V_IN

16.0

15.5

15.0

14.5

14.0

13.5

13.0

12.5

150

148

146

144

142

140

138

136

134

132

VIN = 0.6V

VIN = 1.8V

VIN = 2.5V

VIN = 3.3V

-40°C

25°C

85°C

105°C

12.0

2.5

130

2.5

3.0

3.5

4.0

4.5

5.0

5.5

3.0

3.5

4.0

4.5

5.0

5.5

V_BIAS(V)

D013

D014

T_A= 25°C

V_ON= 5 V

I_OUT= –200 mA

V_IN= 1.8 V

I_OUT= 10 mA

V_ON= 0 V

Figure 11. R_ONvs V_BIAS

Figure 12. R_PDvs V_BIAS

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Typical DC Characteristics (continued)

2.5

2.0

1.5

1.0

0.5

0.0

VBIAS = 2.5V

VBIAS = 3.3V

VBIAS = 5V

VBIAS = 5.5V

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

V_ON(V)

D015

T_A= 25°C

V_IN= 2 V

Figure 13. V_OUTvs V_ON

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7.10 Typical AC Characteristics

C_IN= 1 µF, C_L= 0.1 µF, R_L= 10 Ω (unless otherwise specified)

700

600

500

400

300

200

100

350

325

300

275

250

225

200

175

150

125

100

-40qC

25qC

85qC

105qC

-40qC

25qC

85qC

105qC

0.0

0.5

1.0

1.5

V_IN(V)

2.0

2.5

3.0

0.0

1.0

2.0

3.0

V_IN(V)

4.0

5.0

6.0

D016

D017

V_BIAS= 2.5 V

CT= 1000 pF

Figure 14. t_Dvs V_IN

V_BIAS= 5 V

CT = 1000 pF

Figure 15. t_Dvs V_IN

20

18

16

14

12

10

8

-40qC

25qC

85qC

105qC

-40qC

25qC

85qC

105qC

18

16

14

12

10

8

6

4

2

0

0.0

0

0.0

0.5

1.0

1.5

V_IN(V)

2.0

3.0

1.0

2.0

3.0

V_IN(V)

4.0

6.0

D018

D019

V_BIAS= 2.5 V

CT = 1000 pF

Figure 16. t_Fvs V_IN

V_BIAS= 5 V

CT = 1000 pF

Figure 17. t_Fvs V_IN

200

180

160

140

120

100

80

-40qC

25qC

85qC

-40qC

180

160

140

120

100

80

25qC

85qC

105qC

60

40

20

0

0.0

0

0.0

0.5

1.0

1.5

2.0

3.0

1.0

2.0

3.0

4.0

6.0

V_IN(V)

D020

D021

V_BIAS= 2.5 V

CT = 1000 pF

Figure 18. t_OFFvs V_IN

V_BIAS= 5 V

CT = 1000 pF

Figure 19. t_OFFvs V_IN

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Typical AC Characteristics (continued)

1200

1100

1000

900

800

700

600

500

400

300

800

700

600

500

400

300

200

100

-40qC

25qC

85qC

105qC

-40qC

25qC

85qC

105qC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V_IN(V)

D022

D023

V_BIAS= 2.5 V

CT = 1000 pF

V_BIAS= 5 V

CT = 1000 pF

Figure 21. t_ONvs V_IN

Figure 20. t_ONvs V_IN

1200

900

800

700

600

500

400

300

200

100

0

1100

1000

900

800

700

600

500

400

300

200

100

0

-40qC

25qC

85qC

105qC

-40qC

25qC

85qC

105qC

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V_IN(V)

D024

D025

V_BIAS= 2.5 V

CT = 1000 pF

V_BIAS= 5 V

CT = 1000 pF

Figure 23. t_Rvs V_IN

Figure 22. t_Rvs V_IN

1200

7000

6000

5000

4000

3000

2000

1000

0

-40°C

25°C

85°C

C_T=0pF

1100

1000

900

800

700

600

500

400

300

C_T=220pF

C_T=470pF

C_T=1000pF

C_T=2200pF

C_T=4700pF

CT=10000pF

105°C

2.5

3.0

3.5

4.0

4.5

5.0

0

1

2

3

4

5

6

V_BIAS(V)

V_IN(V)

D026

D027

V_IN= 2.5 V

CT = 1000 pF

V_BIAS= 5 V

T_A= 25°C

Figure 24. t_Rvs V_BIAS

Figure 25. t_Rvs V_IN

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Typical AC Characteristics (continued)

V_IN= 0.6 V

C_IN= 1 µF

V_BIAS= 2.5 V

C_L= 0.1 µF

C_T= 1000 pF

V_IN= 0.6 V

C_IN= 1 µF

V_BIAS= 2.5 V

C_L= 0.1 µF

C_T= 1000 pF

R_L= 10 Ω

Figure 26. Turn-on Response Time

Figure 27. Turn-on Response Time

V_IN= 2.5 V

C_IN= 1 µF

V_BIAS= 2.5 V

C_L= 0.1 µF

C_T= 1000 pF

R_L= 10 Ω

V_IN= 5 V

C_IN= 1 µF

V_BIAS= 5 V

C_L= 0.1 µF

C_T= 1000 pF

R_L= 10 Ω

Figure 28. Turn-on Response Time

Figure 29. Turn-on Response Time

V_IN= 0.6 V

C_IN= 1 µF

V_BIAS= 2.5 V

C_L= 0.1 µF

C_T= 1000 pF

V_IN= 0.6 V

C_IN= 1 µF

V_BIAS= 2.5 V

C_L= 0.1 µF

C_T= 1000 pF

R_L= 10 Ω

Figure 30. Turn-Off Response Time

Figure 31. Turn-off Response Time

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Typical AC Characteristics (continued)

V_IN= 2.5 V

C_IN= 1 µF

V_BIAS= 2.5 V

C_L= 0.1 µF

C_T= 1000 pF

V_IN= 5 V

V_BIAS= 5 V

C_L= 0.1 µF

C_T= 1000 pF

R_L= 10 Ω

C_IN= 1 µF

R_L= 10 Ω

Figure 32. Turn-off Response Time

Figure 33. Turn-on Response Time

8 Parameter Measurement Information

Figure 34. Test Circuit and Timing Waveforms

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9 Detailed Description

9.1 Overview

This device is a 5.5 V, 4 A / 6 A, single channel load switch with an adjustable rise time. The device contains an

N-channel MOSFET controlled by an on/off GPIO-compatible input. The ON pin must be connected and cannot

be left floating. The device is designed to control the turn-on rate and therefore the inrush current. By controlling

the inrush current, power supply sag can be reduced during turn on. The slew rate is set by connecting a

capacitor from the CT pin to GND.

The slew rate is proportional to the capacitor on the CT pin. Refer to the Adjustable Rise Time section to

determine the correct CT value for a desired rise time.

The internal circuitry is powered by the VBIAS pin, which supports voltages from 2.5 to 5.5 V. This circuitry

includes the charge pump, QOD, and control logic. For these internal blocks to function correctly, a voltage

between 2.5 and 5.5 V must be supplied to VBIAS.

When a voltage is supplied to VBIAS and the ON pin goes low, the QOD turns on. This connects VOUT to GND

through an on-chip resistor and is not a feature for the TPS22958N. The typical pull-down resistance (R_PD) is 135

Ω.

9.2 Functional Block Diagram

9.3 Feature Description

9.3.1 ON/OFF Control

The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a

low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard

GPIO logic threshold. It can be used with any microcontroller with 1.2 V or higher GPIO voltage. This pin cannot

be left floating and must be tied either high or low for proper functionality.

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Feature Description (continued)

9.3.2 Quick Output Discharge (QOD)

The TPS22958 includes a QOD feature while the TPS22958N does not. When the device is disabled, a

discharge resistor is connected between VOUT and GND. This resistor has a typical value of 135 Ω and

prevents the output from floating while the switch is disabled.

9.3.3 VIN and VBIAS Voltage Range

For optimal R_ONperformance, make sure V_IN≤ V_BIAS. The device will still function if V_IN> V_BIASbut will exhibit an

R_ONgreater than what is listed in the Electrical Characteristics table. See Figure 35 for an example of a typical

device. R_ONincreases as V_INexceeds the V_BIASvoltage. For the maximum voltage ratings on the VIN and VBIAS

pins, please refer to the Absolute Maximum Ratings table.

20

VBIAS = 2.5V

VBIAS = 3.3V

VBIAS = 5V

VBIAS = 5.5V

19

18

17

16

15

14

13

12

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V_IN(V)

D028

T_A= 25°C

I_OUT= -200 mA

V_ON= 5 V

Figure 35. R_ONvs V_IN

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Feature Description (continued)

9.3.4 Adjustable Rise Time

A capacitor from the CT pin to GND sets the slew rate, and it should be rated for 25 V and above. An

approximate formula for the relationship between CT and slew rate with V_BIAS= 5 V is:

SR = 0.146 × CT + 14.78

where

•

SR = slew rate (in µs/V)

CT = the capacitance value on the CT pin (in pF)

The units for the constant 14.78 is µs/V.

The units for the constant 0.146 is µs/(V×pF)

(1)

Rise time can be calculated by multiplying the input voltage by the slew rate. Table 1 contains rise time values

measured on a typical device.

Table 1. Rise Time Table

RISE TIME (µs) 10% - 90%, C_L= 0.1 µF, C_IN= 1 µF, R_L= 10 Ω, V_BIAS= 5 V

Typical values at 25°C with a 25-V X7R 10% ceramic capacitor on CT

CTx (pF)

VIN = 5 V VIN = 3.3 V VIN = 1.8 V VIN = 1.5 V VIN = 1.2 V VIN = 0.8 V VIN = 0.6 V

0

79

59

41

97

37

86

33

74

26

55

23

48

220

227

158

470

397

270

160

301

640

1315

2778

139

258

548

1128

2372

116

211

450

927

1950

88

72

1000

2200

4700

10000

769

522

153

315

656

1379

126

256

528

1103

1659

3445

7310

1118

2314

4884

9.4 Device Functional Modes

The following table lists the VOUT pin connections for a particular device as determined by the ON pin.

Table 2. VOUT Functional Table

ON (Control Input)

TPS22958

GND

TPS22958N

Open

L

H

VIN

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10 Application and Implementation

10.1 Application Information

10.1.1 Input Capacitor (Optional)

To limit the voltage drop on the input supply caused by transient inrush currents when the switch turns on into a

discharged load capacitor, a capacitor can be placed between VIN and GND. A 1 µF ceramic capacitor, C_IN,

placed close to the pins, is usually sufficient. Higher values of C_INcan be used to further reduce the voltage drop

during high-current application. When switching heavy loads, TI recommends to have an input capacitor about

10× higher than the output capacitor to avoid excessive voltage drop.

10.1.2 Output Capacitor (Optional)

Due to the integrated body diode in the NMOS switch, TI recommends a C_INgreater than C_L. A C_Lgreater than

C_INcan cause the voltage on VOUT to exceed VIN when the system supply is removed. This could result in

current flow through the body diode from VOUT to VIN. TI recommends a C_INto C_Lratio of 10 to 1 for minimizing

V_INdip caused by inrush currents during startup.

10.1.3 Power Supply Sequencing Without a GPIO Input

2.5 V to 5.5 V

VBIAS

Li-Ion 1S battery or

DC/DC controller

VIN

VOUT

C_IN

C_OUT1

Module 1

TPS22958x

ON

CT

GND

C_T1

2.5 V to 5.5 V

VBIAS

VIN

VOUT

C_OUT2

Module 2

TPS22958x

ON

CT

GND

C_T2

Figure 36. Power Supply Sequencing Without a GPIO Input

In many end equipments, there is a need to power up various modules in a pre-determined manner. The

TPS22958x can solve the problem of power sequencing without adding any complexity to the overall system.

Figure 36 shows the configuration required for powering up two modules in a fixed sequence. The output of the

first load switch is tied to the enable of the second load switch, so when Module 1 is powered the second load

switch is enabled and Module 2 is powered.

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10.2 Typical Application

This application demonstrates how the TPS22958 can be used to power a downstream load with a large

capacitance. The example in Figure 37 is powering a 22 µF capacitive output load.

Figure 37. Typical Application Schematic

10.2.1 Design Requirements

For this design example, use the following as the input parameters.

Table 3. Design Parameters

DESIGN PARAMETER

V_IN

EXAMPLE VALUE

3.3 V

5.0 V

4 A

V_BIAS

Load current

Output capacitance (C_L)

Allowable inrush current on VOUT

22 µF

0.33 A

10.2.2 Detailed Design Procedure

To begin the design process, the designer needs to know the following:

•

V_INvoltage

V_BIASvoltage

Load current

Allowable inrush current on VOUT due to C_Lcapacitor

10.2.2.1 VIN to VOUT Voltage Drop

The VIN to VOUT voltage drop in the device is determined by the R_ONof the device and the load current. The

R_ONof the device depends upon the V_INand V_BIASconditions of the device. Refer to the R_ONspecification of the

device in the Electrical Characteristics table. After the R_ONof the device is determined based upon the V_INand

V_BIASconditions, use Equation 2 to calculate the VIN to VOUT voltage drop:

DV = I_LOAD´R_ON

where

•

ΔV = voltage drop from VIN to VOUT

I_LOAD= load current

R_ON= On-resistance of the device for a specific V_INand V_BIAScombination

(2)

An appropriate I_LOADmust be chosen such that the I_MAXspecification of the device is not violated.

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10.2.2.2 Inrush Current

To determine how much inrush current will be caused by the C_Lcapacitor, use Equation 3.

dV_OUT

I

= C_L´

INRUSH

dt

where

•

I_INRUSH= amount of inrush caused by C_L

C_L= capacitance on VOUT

dt = time it takes for change in V_OUTduring the ramp up of VOUT when the device is enabled

dV_OUT= change in V_OUTduring the ramp up of VOUT when the device is enabled

(3)

The device offers adjustable rise time for VOUT and allows the user to control the inrush current during turn-on

through the CT pin. The appropriate rise time can be calculated using the design requirements and the inrush

current equation (Equation 3).

330 mA = 22 µF × 3.3 V / dt

dt = 22 µF × 3.3 V / 300mA

dt = 220 µs

(4)

(5)

(6)

To ensure an inrush current of less than 330 mA, choose a CT based on Table 1 or Equation 1 value that will

yield a rise time of more than 220 µs. See the oscilloscope captures in the Application Curves for an example of

how the CT capacitor can be used to reduce inrush current. See Table 1 for correlation between rise times and

CT values.

An appropriate C_Lvalue should be placed on VOUT such that the I_MAXand I_PLSspecifications of the device are

not violated.

10.2.2.3 Thermal Considerations

The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To

calculate the maximum allowable dissipation, P_D(max)for a given output current and ambient temperature, use

Equation 7.

T_J(MAX)- T_A

=

P

D(MAX)

R_θJA

where

•

P_D(max)= maximum allowable power dissipation

T_J(max)= maximum allowable junction temperature (125°C for the TPS22958)

T_A= ambient temperature of the device

R

_θJA= junction to air thermal impedance. See Thermal Information . This parameter is highly dependent upon

board layout. (7)

For the DGK package, V_BIAS= 5 V, and V_IN= 3.3 V, the maximum ambient temperature with a 4 A load can be

determined by using the following calculation:

White Space

P_D= I²× R

(8)

(9)

White Space

T_A= T_J(MAX)– R_θJA× P_D

White Space

T_A= T_J(MAX)– R_θJA× I²× R

(10)

White Space

T_A= 125°C – 185.7°C/W × (4 A)²× 20 mΩ = 65.6°C

(11)

White Space

Therefore, with the conditions mentioned above, a maximum ambient temperature of 65.6°C is recommended.

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For the DGN package, V_BIAS= 5 V, and V_IN= 3.3 V, the maximum ambient temperature with a 4 A load can be

determined by using the following calculation:

White Space

P_D= I²× R

(12)

(13)

(14)

(15)

White Space

T_A= T_J(MAX)– R_θJA× P_D

White Space

T_A= T_J(MAX)– R_θJA× I²× R

White Space

T_A= 125°C – 67.0°C/W × (4 A)²× 20 mΩ = 103.6°C

White Space

Therefore, with the conditions mentioned above, a maximum ambient temperature of 103.6°C is recommended.

10.2.3 Application Curves

The three scope captures show the usage of a CT capacitor in conjunction with the device. A higher CT value

results in a slower rise and a lower inrush current.

VBIAS = 5 V

CT = Open

VIN = 3.3 V

C_L= 22µF

T_A= 25°C

VBIAS = 5 V

CT = 220 pF

VIN = 3.3 V

C_L= 22µF

T_A= 25°C

Figure 38. Inrush Current Without CT Capacitor

Figure 39. Inrush Current With CT = 220 pF

VBIAS = 5 V

CT = 470 pF

VIN = 3.3 V

C_L= 22µF

T_A= 25°C

Figure 40. Inrush Current With CT = 470 pF

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11 Power Supply Recommendations

The device is designed to operate from a V_BIASrange of 2.5 to 5.5 V and V_INrange of 0.6 to 5.5 V. The power

supply should be well regulated and placed as close to the device terminals as possible. It must be able to

withstand all transient and load current steps. In most situations, using the minimum recommended input

capacitance of 1 uF is sufficient to prevent the supply voltage from dipping when the switch is turned on. In

cases where the power supply is slow to respond to a large transient current or large load current step, additional

bulk capacitance may be required on the input. To avoid ringing on the VBIAS pin from a noisy power supply, a

bypass capacitance of 0.1 µF is recommended.

The requirements for large input capacitance can be mitigated by adding additional capacitance to the CT pin.

This will cause the load switch to turn on more slowly. Not only will this reduce transient inrush current, but it will

also give the power supply more time to respond to the load current step.

12 Layout

12.1 Layout Guidelines

•

VIN and VOUT traces should be as short and wide as possible to accommodate for high current. When

connecting the two VIN or VOUT pins together, an equal trace length should be used to avoid an unequal

distribution of current through each pin.

•

Use vias under the exposed thermal pad to connect to the power ground plane for thermal relief during high

current operation.

VIN pins should be bypassed to ground with low-ESR ceramic bypass capacitors. The typical recommended

bypass capacitance is 1-µF ceramic with X5R or X7R dielectric. This capacitor should be placed as close to

the device pins as possible.

•

VOUT pins should be bypassed to ground with low-ESR ceramic bypass capacitors. The typical

recommended bypass capacitance is one-tenth of the VIN bypass capacitor of X5R or X7R dielectric rating.

This capacitor should be placed as close to the device pins as possible.

The CT capacitor should be placed as close to the device pins as possible. The typical recommended CT

capacitance is a capacitor of X5R or X7R dielectric rating with a rating of 25 V or higher.

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12.2 Layout Example

VIA to Power Ground

Plane

VIA to another layer

VOUT Bypass

Capacitor

VIN Bypass

Capacitor

VIN

ON

VOUT

CT

CT Capacitor

VBIAS

VIN

GND

VOUT

DGN Package

VOUT Bypass

Capacitor

VIN Bypass

Capacitor

VIN

ON

VOUT

CT

CT Capacitor

VBIAS

VIN

GND

VOUT

DGK Package

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13 器件和文档支持

13.1 相关链接

以下表格列出了快速访问链接。范围包括技术文档、支持与社区资源、工具和软件，并且可以快速访问样片或购买

链接。

表 4. 相关链接

器件

产品文件夹

请单击此处

样片与购买

请单击此处

技术文档

请单击此处

工具与软件

请单击此处

支持与社区

请单击此处

TPS22958

TPS22958N

13.2 商标

All trademarks are the property of their respective owners.

13.3 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损

伤。

13.4 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。

14 机械封装和可订购信息

以下页中包括机械封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对

本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。

26

PACKAGE MATERIALS INFORMATION

www.ti.com

17-Jul-2020

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

TPS22958DGKR

TPS22958DGNR

TPS22958NDGKR

TPS22958NDGNR

VSSOP

DGK

8

2500

330.0

12.4

5.3

3.3

3.4

1.3

1.4

8.0

12.0

Q1

HVSSOP DGN

VSSOP DGK

HVSSOP DGN

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

17-Jul-2020

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

TPS22958DGKR

TPS22958DGNR

TPS22958NDGKR

TPS22958NDGNR

VSSOP

DGK

DGN

DGK

DGN

8

2500

346.0

364.0

346.0

364.0

35.0

27.0

HVSSOP

VSSOP

HVSSOP

Pack Materials-Page 2

GENERIC PACKAGE VIEW

DGN 8

3 x 3, 0.65 mm pitch

PowerPAD VSSOP - 1.1 mm max height

SMALL OUTLINE PACKAGE

This image is a representation of the package family, actual package may vary.

Refer to the product data sheet for package details.

4225482/A

www.ti.com

PACKAGE OUTLINE

DGN0008G

PowerPAD^TMVSSOP - 1.1 mm max height

S

C

A

L

E

4

.

0

SMALL OUTLINE PACKAGE

C

5.05

4.75

TYP

A

0.1 C

SEATING

PLANE

PIN 1 INDEX AREA

6X 0.65

8

1

2X

3.1

2.9

1.95

NOTE 3

4

5

0.38

8X

0.25

3.1

2.9

0.13

C A B

B

NOTE 4

0.23

0.13

SEE DETAIL A

EXPOSED THERMAL PAD

4

5

0.25

GAGE PLANE

2.15

1.95

9

1.1 MAX

8

0.15

0.05

1

0.7

0.4

0 -8

A

20

DETAIL A

TYPICAL

1.846

1.646

4225480/B 12/2022

PowerPAD is a trademark of Texas Instruments.

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not

exceed 0.15 mm per side.

4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.

5. Reference JEDEC registration MO-187.

www.ti.com

EXAMPLE BOARD LAYOUT

DGN0008G

PowerPAD^TMVSSOP - 1.1 mm max height

SMALL OUTLINE PACKAGE

(2)

NOTE 9

METAL COVERED

BY SOLDER MASK

(1.57)

SOLDER MASK

DEFINED PAD

SYMM

8X (1.4)

(R0.05) TYP

8

8X (0.45)

1

(3)

NOTE 9

SYMM

(1.89)

9

(1.22)

6X (0.65)

5

4

(

0.2) TYP

VIA

SEE DETAILS

(0.55)

(4.4)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE: 15X

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

OPENING

METAL

EXPOSED METAL

0.05 MAX

ALL AROUND

0.05 MIN

ALL AROUND

NON-SOLDER MASK

DEFINED

SOLDER MASK

DEFINED

15.000

(PREFERRED)

SOLDER MASK DETAILS

4225480/B 12/2022

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

8. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown

on this view. It is recommended that vias under paste be filled, plugged or tented.

9. Size of metal pad may vary due to creepage requirement.

www.ti.com

EXAMPLE STENCIL DESIGN

DGN0008G

PowerPAD^TMVSSOP - 1.1 mm max height

SMALL OUTLINE PACKAGE

(1.57)

BASED ON

0.125 THICK

STENCIL

SYMM

(R0.05) TYP

8X (1.4)

8

1

8X (0.45)

(1.89)

SYMM

BASED ON

0.125 THICK

STENCIL

6X (0.65)

5

4

METAL COVERED

BY SOLDER MASK

SEE TABLE FOR

DIFFERENT OPENINGS

FOR OTHER STENCIL

THICKNESSES

(4.4)

SOLDER PASTE EXAMPLE

EXPOSED PAD 9:

100% PRINTED SOLDER COVERAGE BY AREA

SCALE: 15X

STENCIL

THICKNESS

SOLDER STENCIL

OPENING

0.1

1.76 X 2.11

1.57 X 1.89 (SHOWN)

1.43 X 1.73

0.125

0.15

0.175

1.33 X 1.60

4225480/B 12/2022

NOTES: (continued)

10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

11. Board assembly site may have different recommendations for stencil design.

www.ti.com

重要声明和免责声明

TI“按原样”提供技术和可靠性数据（包括数据表）、设计资源（包括参考设计）、应用或其他设计建议、网络工具、安全信息和其他资源，

不保证没有瑕疵且不做出任何明示或暗示的担保，包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担

保。

这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任：(1) 针对您的应用选择合适的 TI 产品，(2) 设计、验

证并测试您的应用，(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。

这些资源如有变更，恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。

您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成

本、损失和债务，TI 对此概不负责。

TI 提供的产品受 TI 的销售条款或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改

TI 针对 TI 产品发布的适用的担保或担保免责声明。

TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE

邮寄地址：Texas Instruments, Post Office Box 655303, Dallas, Texas 75265


型号：	TPS22958NDGKR
厂家：	TEXAS INSTRUMENTS
描述：	具有可调节上升时间和可选输出放电功能的 5.5V、6A、13mΩ 负载开关 \| DGK \| 8 \| -40 to 105 开关
文件：	总37页 (文件大小：2275K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TPS22958NDGKR [TI]

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