TPS22997RYZR [TI]
具有电源正常指示功能的 5.5V、10A、4mΩ 导通电阻负载开关 | RYZ | 10 | -40 to 125;
| 型号： | TPS22997RYZR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有电源正常指示功能的 5.5V、10A、4mΩ 导通电阻负载开关 | RYZ | 10 | -40 to 125 开关 |
| 文件： | 总25页 (文件大小：1357K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS22997
ZHCSQ15 –DECEMBER 2022
TPS22997 具有可调上升时间的5.5V、10A、4mΩ 导通电阻负载开关
1 特性
3 说明
• 输入电压范围(VIN)：0.1V-5.5V
• 偏置电压范围：1.5V 至5.5V
• 最大持续电流：10A
• 导通电阻(RON)：4mΩ（典型值）
• 可调转换率控制
• 可调节快速输出放电(QOD)
• 开漏电源正常(PG) 信号
• 热关断
TPS22997 是一款单通道负载开关，具有可配置上升时
间，从而可更大限度地降低浪涌电流。此器件包含一个
可在 0.1 V 至 5.5V 输入电压范围内运行的 N 沟道
MOSFET，并且支持10 A 的最大持续电流。
该开关由使能引脚 (ON) 控制，该引脚能够直接连接低
电压 GPIO 信号 (VIH = 0.8V)。TPS22997 器件具有可
选的 QOD 引脚，用于在开关关闭时快速输出放电，并
且输出的下降时间 (tFALL) 可以通过外部电阻进行调
整。器件上有一个电源正常 (PG) 信号，指示主
MOSFET 何时完全导通，可用于启用下游负载。集成
式热关断功能可确保在高温环境中提供保护。
• 低功耗：
– 导通状态(IQ)：10μA（典型值）
– 关闭状态(ISD)：0.1μA（典型值）
• 热关断
TPS22997 采用 10 引脚 WQFN 封装 (RYZ)（1.5mm
× 2.0mm，间距为 0.5mm）并可在自然通风条件下的
–40°C 至+125°C 温度范围运行。
• ON 引脚智能下拉电阻(RPD,ON
)
– ON ≥VIH (ION)：25nA（典型值）
– ON ≤VIL (RPD,ON)：500kΩ（典型值）
器件信息
封装(1)
2 应用
器件型号
TPS22997
封装尺寸（标称值）
• 固态硬盘
WQFN (10)
1.5mm × 2.0mm
• PC 和笔记本电脑
• 工业PC
• 光学模块
(1) 要了解所有可用封装，请参阅数据表末尾的可订购产品附录。
TPS22997 典型应用
TPS22997 方框图
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSGT0
TPS22997
ZHCSQ15 –DECEMBER 2022
www.ti.com.cn
Table of Contents
8 Detailed Description......................................................13
8.1 Overview...................................................................13
8.2 Functional Block Diagram.........................................13
8.3 Feature Description...................................................13
8.4 Device Functional Modes..........................................14
9 Application and Implementation..................................16
9.1 Application Information............................................. 16
9.2 Typical Application.................................................... 16
9.3 Power Supply Recommendations.............................17
9.4 Layout....................................................................... 18
10 Device and Documentation Support..........................19
10.1 接收文档更新通知................................................... 19
10.2 支持资源..................................................................19
10.3 Trademarks.............................................................19
10.4 静电放电警告.......................................................... 19
10.5 术语表..................................................................... 19
11 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics (VBIAS = 5 V)..................... 5
6.6 Electrical Characteristics (VBIAS = 3.3 V).................. 5
6.7 Electrical Characteristics (VBIAS = 1.5 V).................. 6
6.8 Switching Characteristics (VBIAS = 5 V).................... 7
6.9 Switching Characteristics (VBIAS = 3.3 V)................. 8
6.10 Switching Characteristics (VBIAS = 1.5 V)............... 9
6.11 Typical Characteristics............................................ 10
7 Parameter Measurement Information..........................12
Information.................................................................... 20
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
December 2022
*
Initial Release
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5 Pin Configuration and Functions
图5-1. TPS22997 RYZ Package, 10-Pin WQFN (Top View)
表5-1. Pin Functions
PIN
I/O(1)
DESCRIPTION
NAME
NO.
VBIAS
1
I
I
Device bias supply
Switch input
VIN
PG
2, 3
4
Open drain power good signal, asserted high when the output is full load ready
O
-
GND
QOD
VOUT
CT
5
Device ground
Quick output discharge pin
6
-
7, 8
9
O
I
Switch output
Timing pin, can control the slew rate of the output through a capacitor to GND
Enable pin
ON
10
I
(1) I = Input, O = Output
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
MAX
6
UNIT
VIN
Input Voltage
Bias Voltage
V
V
V
V
A
VBIAS
6
VON, VPG, VQOD Control Pin Voltage
6
VCT
CT Pin Voltage
15
10
IMAX
Maximum Current
Internally
Limited
TJ
Junction temperature
Storage temperature
°C
°C
Tstg
150
–65
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001, all pins(1)
±2000
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JESD22-C101, all pins(2)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
0.1
1.5
0.8
0
NOM
MAX
5.5
UNIT
V
VIN
Input Voltage
VBIAS
VIH
Bias Voltage
5.5
V
ON Pin High Voltage Range
ON Pin Low Voltage Range
5.5
V
VIL
0.35
5.5
V
VPG, VQOD Control Pin Voltage
TA Ambient Temperature
0
V
-40
125
°C
6.4 Thermal Information
TPS22997
THERMAL METRIC
RYZ (WQFN)
10 PINS
83.7
UNIT
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
73.9
18.2
Junction-to-top characterization parameter
Junction-to-board characterization parameter
2.0
YJB
18.1
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6.5 Electrical Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted). Typical values are specified at 25°C and VIN = 3.3V,
VBIAS = 5.5V.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIAS
IQ,VBIAS
ISD,VIN
VBIAS Shutdown Current
VBIAS Quiescent Current
ON = 0V
-40°C to 85°C
-40°C to 125°C
25°C
0.5
1
uA
uA
uA
uA
uA
uA
uA
uA
uA
10
ON > VIH
-40°C to 85°C
-40°C to 125°C
25°C
15
15
0.1
VIN Shutdown Current
ON pin leakage
ON = 0V
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
1
7
ION
ON = VBIAS
0.1
4
Performance
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
RON
RON
RON
RON
RON
On-Resistance
On-Resistance
On-Resistance
On-Resistance
On-Resistance
VIN = 5V
-40°C to 85°C
-40°C to 125°C
25°C
6
7
4
4
4
4
VIN = 3.3V
VIN = 1.8V
VIN = 1.2V
-40°C to 85°C
-40°C to 125°C
25°C
6
7
-40°C to 85°C
-40°C to 125°C
25°C
6
7
-40°C to 85°C
-40°C to 125°C
25°C
6
7
VIN = 0.8V
IPG = 1mA
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
25°C
6
7
VOL,PG
RPD,ON
Power Good VOL
0.2
500
50
kΩ
Smart Pull Down Resistance
-40°C to 125°C
25°C
700
75
kΩ
Ω
RQOD
QOD Resistance
-40°C to 125°C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
190
°C
°C
TSDHYS
Thermal Shutdown Hysteresis
6.6 Electrical Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
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6.6 Electrical Characteristics (VBIAS = 3.3 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
25°C
0.1
uA
ISD,VBIAS
IQ,VBIAS
ISD,VIN
VBIAS Shutdown Current
ON = 0V
-40°C to 85°C
-40°C to 125°C
25°C
0.5
1
uA
uA
uA
uA
uA
uA
uA
uA
uA
10
VBIAS Quiescent Current
ON > VIH
-40°C to 85°C
-40°C to 125°C
25°C
15
15
0.1
VIN Shutdown Current
ON pin leakage
ON = 0V
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
1
7
ION
ON = VBIAS
0.1
4
Performance
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
RON
RON
RON
RON
On-Resistance
On-Resistance
On-Resistance
On-Resistance
VIN = 3.3V
VIN = 1.8V
VIN = 1.2V
-40°C to 85°C
-40°C to 125°C
25°C
6
7
4
4
4
-40°C to 85°C
-40°C to 125°C
25°C
6
7
-40°C to 85°C
-40°C to 125°C
25°C
6
7
VIN = 0.8V
IPG = 1mA
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
25°C
6
7
VOL,PG
RPD,ON
Power Good VOL
0.2
500
50
kΩ
kΩ
Ω
Smart Pull Down Resistance
-40°C to 125°C
25°C
700
100
190
RQOD
QOD Resistance
-40°C to 125°C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
°C
°C
TSDHYS
Thermal Shutdown Hysteresis
6.7 Electrical Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
Power Consumption
25°C
0.1
uA
ISD,VBIAS
VBIAS Shutdown Current
VBIAS Quiescent Current
ON = 0V
ON > VIH
-40°C to 85°C
-40°C to 125°C
25°C
0.5
1
uA
uA
uA
uA
uA
10
IQ,VBIAS
-40°C to 85°C
-40°C to 125°C
15
15
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6.7 Electrical Characteristics (VBIAS = 1.5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA
MIN
TYP
MAX UNIT
25°C
0.1
uA
ISD,VIN
VIN Shutdown Current
ON pin leakage
ON = 0V
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
1
7
uA
uA
uA
ION
ON = VBIAS
VIN = 1.5V
0.1
4.5
Performance
25°C
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
V
RON
RON
RON
On-Resistance
On-Resistance
On-Resistance
-40°C to 85°C
-40°C to 125°C
25°C
6
7
4.5
4.5
VIN = 1.2V
-40°C to 85°C
-40°C to 125°C
25°C
6
7
VIN = 0.8V
IPG = 1mA
-40°C to 85°C
-40°C to 125°C
-40°C to 125°C
25°C
6
7
VOL,PG
RPD,ON
Power Good VOL
0.2
500
55
kΩ
kΩ
Ω
Smart Pull Down Resistance
-40°C to 125°C
25°C
700
100
190
RQOD
QOD Resistance
-40°C to 125°C
Ω
Protection
TSD
Thermal Shutdown
-
-
150
170
20
°C
°C
TSDHYS
Thermal Shutdown Hysteresis
6.8 Switching Characteristics (VBIAS = 5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 5V
tON
Turn ON time
1170
819
347
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Rise time
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
Delay time
Fall time
tFALL
tOFF
VIN = 3.3V
tON
2090
108
Turn OFF time
Turn ON time
Rise time
944
567
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
377
tFALL
tOFF
VIN = 1.8V
tON
2110
113
Turn OFF time
Turn ON time
Rise time
692
327
365
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
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6.8 Switching Characteristics (VBIAS = 5 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
2150
117
MAX
UNIT
us
tFALL
tOFF
Fall time
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
Turn OFF time
us
VIN = 1.2V
tON
Turn ON time
Rise time
591
227
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
364
tFALL
tOFF
2180
120
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
523
159
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
365
tFALL
tOFF
2260
129
Turn OFF time
6.9 Switching Characteristics (VBIAS = 3.3 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIN = 3.3V
tON
Turn ON time
898
563
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Rise time
Delay time
Fall time
336
tFALL
tOFF
2100
108
Turn OFF time
VIN = 1.8V
tON
Turn ON time
Rise time
708
331
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
377
tFALL
tOFF
2145
113
Turn OFF time
VIN = 1.2V
tON
Turn ON time
Rise time
605
231
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
375
tFALL
tOFF
2190
119
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
536
162
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
373
tFALL
2260
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6.9 Switching Characteristics (VBIAS = 3.3 V) (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MIN
TYP
MAX
MAX
UNIT
tOFF
Turn OFF time
126
us
RL = 100Ω, CL = 10uF, CT = 1000pF
6.10 Switching Characteristics (VBIAS = 1.5 V)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
TYP
UNIT
VIN = 1.5V
tON
Turn ON time
620
281
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Rise time
Delay time
Fall time
340
tFALL
tOFF
2150
111
Turn OFF time
VIN = 1.2V
tON
Turn ON time
Rise time
642
237
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
404
tFALL
tOFF
2170
114
Turn OFF time
VIN = 0.8V
tON
Turn ON time
Rise time
535
166
us
us
us
us
us
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
RL = 100Ω, CL = 10uF, CT = 1000pF
tRISE
tD
Delay time
Fall time
368
tFALL
tOFF
2245
171
Turn OFF time
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6.11 Typical Characteristics
59
58
57
56
55
54
53
52
51
50
49
–40 C
25 C
85 C
125 C
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
VIN = VBIAS
VIN = VBIAS
图6-2. QOD-Resistance vs Bias Voltage
图6-1. On-Resistance vs Bias Voltage
12
11.6
11.2
10.8
10.4
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 C
–40 C
25 C
25 C
125 C
85 C
125 C
9.6
9.2
8.8
8.4
8
1.5
2
2.5
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Bias Voltage (V)
Bias Voltage (V)
VIN = VBIAS
VOUT = OPEN
VIN = VBIAS
VOUT = GND
图6-3. Quiescent Current vs Bias Voltage
图6-4. Shutdown Current vs Bias Voltage
145
140
135
130
125
120
115
110
105
100
95
850
800
750
700
650
600
550
500
450
400
350
300
250
200
150
–40 C
25 C
–40 C
25 C
85 C
85 C
125 C
125 C
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
Input Voltage (V)
VBIAS = 5 V
CL = 10 µF
VBIAS = 5 V
CL = 10 µF
RL = 100 Ω
RL = 100 Ω
CT = 1000 pF
CT = 1000 pF
图6-5. Delay Time vs Input Voltage
图6-6. Rise Time vs Input Voltage
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6.11 Typical Characteristics (continued)
132.5
130
1200
1100
1000
900
–40 C
25 C
–40 C
25 C
125 C
85 C
127.5
125
125 C
122.5
120
800
117.5
115
700
600
112.5
110
500
400
107.5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
Input Voltage(V)
VBIAS = 5 V
CL = 10 µF
VBIAS = 5 V
CL = 10 µF
RL = 100 Ω
RL = 100 Ω
CT = 1000 pF
CT = 1000 pF
图6-7. Turn-on Time vs Input Voltage
图6-8. Turn-off Time vs Input Voltage
2600
2520
2440
2360
2280
2200
2120
2040
1960
1880
1800
3300
3000
2700
2400
2100
1800
1500
1200
900
VIN = 5 V
-40 C
25 C
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 0.8 V
125 C
600
300
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
CT Capacitor (pF)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Input Voltage (V)
VBIAS = 5 V
CL = 10 µF
RL = 100 Ω
VBIAS = 5 V
CL = 10 µF
RL = 100 Ω
CT = 1000 pF
CT = 1000 pF
QOD = 2 kΩ
图6-10. Rise Time vs CT Capacitor
图6-9. Fall Time vs Input Voltage
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7 Parameter Measurement Information
图7-1. TPS22997 Timing Diagram
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8 Detailed Description
8.1 Overview
The TPS22997 device is a single-channel load switch with a 4-mΩ power MOSFET designed to operate up to 10
A. The voltage range is 0.1 V to 5.5 V. A configurable rise time provides flexibility for power sequencing and
minimizes inrush current for high capacitance loads.
The switch is controlled by an enable pin (ON), which is capable of interfacing directly with low voltage GPIO
signals down to its VIH level of 0.8 V. The TPS22997 device has an optional QOD pin for quick output discharge
when switch is turned off, and the fall time (tFALL) of the output can be adjusted through an external capacitor.
There is a Power Good (PG) signal on the device that indicates when the main MOSFET is fully turned on and
the on-resistance is at its final value.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 ON and OFF Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold so it
can be used in a wide variety of applications. When the pin pull high, the device enables, and when it is low, the
device disables.
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8.3.2 Adjustable Slew Rate
A capacitor to GND on the CT pin sets the slew rate, and the higher the capacitance the lower the slew rate. The
voltage on the CT pin can be as high as 15 V; therefore, the minimum voltage rating for the CT capacitor must
be 30 V for optimal performance. Rise times for VBIAS = 5 V are shown below.
CT Capacitor
0 pF
VIN = 5 V
165 µs
VIN = 3.3 V
126 µs
VIN = 1.8 V
86 µs
VIN = 1.2 V
66 µs
VIN = 0.8 V
51 µs
220 pF
309 µs
221 µs
137 µs
99 µs
74 µs
1000 pF
4700 pF
819 µs
554 µs
319 µs
222 µs
829 µs
160 µs
575 µs
3260 µs
2170 µs
1210 µs
The following equation can be used to estimate the rise time for different VIN and CT capacitors at VBIAS = 5 V.
tR = (0.1302 VIN + 0.0063) × CT + 27.797 VIN + 30.54
(1)
Where:
• tR = Rise time in µs
• VIN = Input voltage in V
• CT = CT capacitance in pF
8.3.3 Adjustable Quick Output Discharge
The TPS22997 device includes a QOD feature that can be configured in one of three ways:
1. QOD pin shorted to VOUT pin. Using this method, the discharge rate after the switch becomes disabled is
controlled with the value of the internal resistance RQOD. The value of this resistance is listed in the
Electrical Characteristics table.
2. QOD pin connected to VOUT pin using an external resistor REXT. After the switch becomes disabled, the
discharge rate is controlled by the value of the total resistance of the QOD.
3. QOD pin is unused and left floating. Using this method, there is no quick output discharge functionality, and
the output remains floating after the switch is disabled.
Fall time is dependent on the strength of the configured pulldown resistance on the output.
8.3.4 Thermal Shutdown
When the device temperature reaches 150°C (typical), the device shuts itself off to prevent thermal damage.
After it cools off by about 20°C, the device turns back on. If the device is kept in a thermally stressful
environment, then the device oscillates between these two states until it can keep its temperature below the
thermal shutdown point.
8.3.5 Power Good (PG) Signal
The TPS22997 device has a Power Good (PG) output signal to indicate the gate of the pass FET is driven high
and the switch is on with the on-resistance close to its final value (full load ready). The signal is an active high
and open drain output which can be connected to a voltage source through an external pullup resistor, RPU. This
voltage source can be VOUT from the TPS22997 device or another external voltage. VBIAS is required for PG to
have a valid output.
8.4 Device Functional Modes
The below table summarizes the device functional modes:
ON
L
Fault Condition
VOUT State
Hi-Z
N/A
H
None
VIN (through RON)
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ON
Fault Condition
VOUT State
X
Thermal shutdown
Hi-Z
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9 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
9.2 Typical Application
This typical application demonstrates how to use the TPS22997 device to limit startup inrush current.
TPS22997
VOUT
VIN
Power Supply
Load
RDCHG
VBIAS
RPG
VBIAS
QOD
PG
CBIAS
ON
CT
EN
OFF
RT
CT
GND
图9-1. TPS22997 Basic Application
表9-1. Component Descriptions
PARAMETER
Purpose
CBIAS
Stabilize the bias supply and filter out low frequency noise.
Adjustable rise time capacitor.
CT
Optional CT capacitor discharge resistor for cases when device is
RT
disabled before output has fully ramped up. Use a resistor >10MΩ.
RDCHG
Adjustable output discharge resistor.
9.2.1 Design Requirements
For this example, the values below are used as the design parameters.
表9-2. Design Parameters
PARAMETER
VALUE
VBIAS
VIN
5.0 V
5.0 V
220 μF
1.5 A
Load capacitance
Maximum inrush current
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9.2.2 Detailed Design Procedure
When the switch enables, the charge up the output capacitance from 0 V to the set value (1.8 V in this example).
This charge arrives in the form of inrush current. Calculate inrush current using 方程式2.
Inrush Current = CL × dVOUT/dt
(2)
Where:
• CL is the output capacitance.
• dVOUT is the change in VOUT during the ramp up of the output voltage when device is enabled. Because
rise time is 10% of VOUT to 90% of VOUT, this is 80% of the VIN value.
• dt is the rise time in VOUT during the ramp up of the output voltage when the device is enabled.
The TPS22997 offers an adjustable rise time for VOUT, allowing the user to control the inrush current during turn
on. Calculate the appropriate rise time using the design requirements and the inrush current equation as shown
below.
1.5 A = 220 µF × (5.0 V × 80%) / dt
dt = 586 us
(3)
(4)
To ensure an inrush current of less than 1.5 A, a CT setting that yields a rise time of more than 586 µs must be
chosen. By using a 1000pF capacitance, a rise time of 819 μs is selected, limiting the inrush current to below
1.5 A.
9.2.3 Application Performance Plots
图9-2. Inrush Current for CL = 220 µF with CT = 1000 pF
图9-3. PG Pin Behavior with Inrush Current for CL = 220 µF
with CT = 1000 pF
9.3 Power Supply Recommendations
The TPS22997 device is designed to operate with a VIN range of 0.1 V to 5.5 V. Regulate the VIN power supply
well. The power supply must be able to withstand all transient load current steps. In most situations, using an
input capacitance (CIN) of 1 μF is sufficient to prevent the supply voltage from dipping when the switch is turned
on. In cases where the power supply is slow to respond to a large transient current or large load current step,
additional bulk capacitance can be required on the input.
A capacitor (CBIAS) is recommended to be placed as close to the device as possible to stabilize the supply and
filter our low frequency noise.
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9.4 Layout
9.4.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, place the input and output
capacitors close to the device to minimize the effects that parasitic trace inductances can have on normal
operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
9.4.2 Layout Example
VBIAS
From GPIO
Via to GND
CT
ON
VBIAS
CT
VIN
VOUT
VIN
VOUT
PG
QOD
GND
RQOD
Via to GND
To GPIO
图9-4. TPS22997 Layout Example
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10 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
10.1 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
10.2 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
10.3 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
10.4 静电放电警告
静电放电(ESD) 会损坏这个集成电路。德州仪器(TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理
和安装程序，可能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级，大至整个器件故障。精密的集成电路可能更容易受到损坏，这是因为非常细微的参
数更改都可能会导致器件与其发布的规格不相符。
10.5 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
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11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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30-May-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TPS22997RYZR
ACTIVE
WQFN-HR
RYZ
10
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 125
(102, 1O2)
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OUTLINE
RYZ0010A
WQFN-HR - 0.8 mm max height
SCALE 7.000
PLASTIC QUAD FLATPACK - NO LEAD
1.6
1.4
B
A
2.1
1.9
PIN 1 INDEX AREA
0.8
0.7
C
SEATING PLANE
0.08 C
0.05
0.00
(0.12)
TYP
0.475
0.275
6X
5
0.1
C A B
C
0.05
4
6
SYMM
2X
1.5
0.3
0.2
10X
9
1
6X 0.5
10
0.725
0.525
4X
PIN 1 ID
(45 X 0.1)
SYMM
0.1
C A B
C
0.05
4226834/B 06/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
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EXAMPLE BOARD LAYOUT
RYZ0010A
WQFN-HR - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
SYMM
10
4X (0.825)
6X (0.575)
9
1
10X (0.25)
SYMM
(1.825)
6X (0.5)
4
6
(R0.05) TYP
5
(1.075)
(1.325)
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:30X
0.05 MAX
ALL AROUND
0.05 MIN
ALL AROUND
SOLDER MASK
OPENING
METAL
EXPOSED
METAL
SOLDER MASK
EXPOSED
OPENING
METAL
METAL
UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
NOT TO SCALE
4226834/B 06/2021
NOTES: (continued)
3. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).
www.ti.com
EXAMPLE STENCIL DESIGN
RYZ0010A
WQFN-HR - 0.8 mm max height
PLASTIC QUAD FLATPACK - NO LEAD
SYMM
10
4X (0.825)
6X (0.575)
1
9
10X (0.25)
SYMM
(1.825)
6X (0.5)
4
6
(R0.05) TYP
5
(1.075)
(1.325)
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICKNESS
SCALE: 30X
4226834/B 06/2021
NOTES: (continued)
5. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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Copyright © 2023，德州仪器 (TI) 公司
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