TPS40042DRCT [TI]

LOW PIN COUNT, LOW VIN (3.0 V TO 5.5 V) SYNCHRONOUS BUCK DC-TO-DC CONTROLLER WITH EXTERNAL REFERENCE INPUT; 低引脚数,低VIN ( 3.0 V至5.5 V )与外部基准输入同步降压型DC - DC控制器
TPS40042DRCT
型号: TPS40042DRCT
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

LOW PIN COUNT, LOW VIN (3.0 V TO 5.5 V) SYNCHRONOUS BUCK DC-TO-DC CONTROLLER WITH EXTERNAL REFERENCE INPUT
低引脚数,低VIN ( 3.0 V至5.5 V )与外部基准输入同步降压型DC - DC控制器

输入元件 控制器
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TPS40042  
www.ti.com  
SLUS777NOVEMBER 2007  
LOW PIN COUNT, LOW V (3.0 V TO 5.5 V) SYNCHRONOUS BUCK DC-TO-DC  
IN  
CONTROLLER WITH EXTERNAL REFERENCE INPUT  
1
FEATURES  
CONTENTS  
2
3.0-V to 5.5-V Input  
External Reference required: 0.5 V to 1.5 V  
Output Voltage from REFIN to 90% of VIN  
High-Side Drive for N-Channel FET  
Supports Pre-Biased Outputs  
Device Ratings  
2
4
Electrical Characteristics  
Device Information  
Application Information  
Design Examples  
8
10  
18  
28  
Adaptive Anti-Cross Conduction Gate Drive  
Fixed switching frequency (600 kHz) Voltage  
Mode Control  
Additional References  
Three Selectable Short Circuit Protection  
Levels  
DESCRIPTION  
Hiccup Restart from Faults  
Active Low Enable  
The TPS40042 DC/DC controller is designed to  
operate with an input source between a 3.0 V and 5.5  
V. To reduce the number of external components, a  
number of operating parameters are fixed internally.  
The operating frequency for example, is internally set  
at 600 kHz. (Continued)  
Thermal Shutdown Protection at 145°C  
10-Pin, 3-mm x 3-mm SON (DRC)  
APPLICATIONS  
DDR Memory  
Point of Load  
Telecommunications  
DC to DC Modules  
V
IN  
TPS40042  
HDRV 10  
Reference Input  
1
2
3
4
5
REFIN  
EN  
SW  
BOOT  
LDRV  
GND  
9
8
7
6
V
OUT  
Enable  
FB  
COMP  
VDD  
UDG-07141  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
Predictive Gate Drive is a registered trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007, Texas Instruments Incorporated  
TPS40042  
www.ti.com  
SLUS777NOVEMBER 2007  
DESCRIPTION (CONT.)  
One of three short circuit threshold levels may be selected by the addition of an external resistor from the COMP  
pin to circuit ground (no resistor is the default setting). During power on, and before the internal soft start  
commands the output voltage to rise, the TPS40042 enters a calibration cycle, measures the current out of the  
COMP pin, and selects an internal SCP threshold voltage. At the end of the 1.5-ms calibration time, the output  
voltage is allowed to enter soft-start. During operation, the selected SCP threshold voltage is compared to the  
upper MOSFET’s voltage drop during its ON time to determine whether there is an overload condition. If the  
voltage across the MOSFET exceeds the threshold voltage, the TPS40042 counts seven continuous pulses  
before shutting completely OFF for seven soft start charge/discharge cycles, after which, the TPS40042 attempts  
to restart the output.  
During startup, both the high-side MOSFET switch and the synchronous rectifier are held in the OFF state until  
the internal soft start commands an output voltage higher than the voltage currently at the output. This may  
happen when the output is pre-biased at some voltage greater than zero and less than the desired regulation  
voltage. When the internal soft start first commands the output to rise, the pulse width of the synchronous  
rectifier is slowly increased from zero to the full 1-D conduction time by a number of discrete steps. In this way,  
inductor current is not allowed to reverse quickly, and ensures a monotonic startup of the output whether the  
output starts from zero or from a pre-bias level. If power is applied to the device while the EN (enable low) pin is  
allowed to float high, the TPS40042 remains OFF. Only when the EN pin is pulled down towards ground is the  
controller allowed to start.  
ORDERING INFORMATION  
OPERATING FREQUENCY  
600 kHz  
PACKAGE  
TAPE AND REEL QTY.  
PART NUMBER  
TPS40042DRCT  
TPS40042DRCR  
Plastic 10-pin SON (DRC)  
Plastic 10-pin SON (DRC)  
250  
600 kHz  
3000  
DEVICE RATINGS  
ABSOLUTE MAXIMUM RATINGS  
Over operating free-air temperature range (unless otherwise noted, all voltages are with respect to GND.)  
PARAMETER  
VALUE  
6.5  
UNIT  
VDD  
SW  
-3 to 10.5  
-5  
SW  
transient (< 50 ns)  
BOOT  
HDRV  
SW+6.5  
SW to SW+6.5  
V
EN, FB, LDRV  
,REFIN  
-0.3 to 6.5  
COMP  
-0.3 to 3  
-40 to 150  
-55 to 150  
Operating junction temperature  
Storage junction temperature  
°C  
RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
MIN  
3.0  
0.5  
-40  
TYP  
MAX  
5.5  
UNIT  
VVDD  
VREFIN  
TJ  
Input voltage to VDD pin  
V
V
Voltage applied to REFIN pin during regulation  
Junction temperature  
1.5  
125  
°C  
2
Copyright © 2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS40042  
TPS40042  
www.ti.com  
SLUS777NOVEMBER 2007  
ELECTROSTATIC DISCHARGE (ESD) PROTECTION  
PARAMETER  
MIN  
TYP  
2500  
1500  
MAX  
UNIT  
V
Human body model  
CDM  
V
PACKAGE DISSIPATION RATINGS(1)  
THERMAL IMPEDANCE  
TA = 25°C POWER RATING  
JUNCTION-TO-AMBIENT  
TA = 85°C POWER RATING  
48°C/W  
2W  
0.8W  
(1) For more information on the DRC package and the test method, refer to TI technical brief, literature number SZZA017.  
Copyright © 2007, Texas Instruments Incorporated  
3
Product Folder Link(s): TPS40042  
TPS40042  
www.ti.com  
SLUS777NOVEMBER 2007  
ELECTRICAL CHARACTERISTICS  
TJ = -40 °C to 85°C VVDD = 5 V, (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
INPUT SUPPLY  
VVDD  
Input voltage range(1)  
3.0  
5.5  
180  
V
IDDsd  
IDDq  
Shutdown  
VEN = VVDD  
100  
µA  
Quiescent  
VFB = 0.8 V  
1.0  
3.0  
2.0  
mA  
IDDs  
Switching current  
Minimum turn-on voltage  
No load at HDRV/LDRV  
UVLOON  
1.90  
80  
2.05  
130  
2.2  
V
UVLOHYS Hysteresis  
200  
mV  
OSCILLATOR/ RAMP GENERATOR  
fPWM  
PWM frequency  
3.0 V < VVDD < 5.5 V  
VVDD = 5.0 V, 0°C < TJ < 70°C  
VPEAK – VVALLEY  
500  
540  
600  
600  
0.87  
0.4  
700  
660  
1.0  
kHz  
kHz  
V
fPWM  
PWM frequency  
VRAMP  
VVALLEY  
PWM  
Ramp amplitude PP  
Ramp valley voltage  
0.75  
V
MAXDUTY Maximum duty cycle,  
MINDUTY Minimum duty cycle  
MIN pulse  
VFB = 0 V, 3.0 V < VVDD < 5.5 V  
88%  
95%  
90  
0%  
Minimum width control range before  
jumping to zero.  
Minimum controllable pulse width  
150  
ns  
(2)  
width  
ERROR AMPLIFIER  
VOS  
IFB  
FB to REFIN offset voltage  
0.5 V < VREFIN < 1.5 V  
-5  
0
5
mV  
nA  
FB, REFIN input bias current  
-30  
-125  
IOH = 0.5 mA, VFB = 0 V, VVDD = 5.5  
V
VOH  
High level output voltage  
2.0  
2.5  
V
VOL  
IOH  
Low level output voltage  
Output source current  
Output sink current  
Gain bandwidth  
IOL = 0.5 mA, VFB = VVDD  
VCOMP = 0.7 V, VFB = GND  
VCOMP = 0.7 V, VFB = VVDD  
80  
6
150  
mV  
1
2
mA  
IOL  
8
(2)  
GBW  
AOL  
5
10  
85  
MHz  
dB  
Open loop gain  
55  
SHORT CIRCUIT PROTECTION  
Resistor COMP to GND = 2.4 k, TJ  
= 25°C  
Low short circuit threshold voltage  
80  
140  
250  
105  
175  
130  
210  
370  
TH1  
Medium short circuit threshold  
voltage  
Default: No resistor COMP to GND,  
TJ = 25°C  
VTH2  
mV  
Resistor COMP to GND = 12 k, TJ  
= 25°C  
VTH3  
High short circuit threshold voltage  
Threshold temperature coefficient  
310  
3100  
190  
(2)  
(2)  
VTH(tc)  
tON(oc)  
ppm  
ns  
Minimum HDRV pulse time in over  
current  
tSWOCblank SW leading edge blanking pulse in  
100  
40  
(2)  
over current detection  
tHICCUP  
Hiccup time between restarts  
ms  
(1) VVDD operation to 2.25 V is possible with some degradation in specifications. Under this condition, the VREFIN range is limited to 0.5 V to  
0.7 V.  
(2) Ensured by design. Not production tested.  
4
Copyright © 2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS40042  
TPS40042  
www.ti.com  
SLUS777NOVEMBER 2007  
ELECTRICAL CHARACTERISTICS (continued)  
TJ = -40 °C to 85°C VVDD = 5 V, (unless otherwise noted)  
PARAMETER  
SOFT START/ENABLE  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Calibration time before softstart  
begins  
(3)  
tCAL  
1.0  
1.6  
2.5  
FB rise time from 0 V to VREFIN = 1.5  
V
ms  
(3)  
tSS  
Soft start time(4)  
4.5  
5.5  
6.0  
7.6  
7.5  
10  
tREG  
Time to voltage regulation  
Enable threshold  
Sum of tCAL plus tSS ; VREFIN = 1.5 V  
EN voltage w.r.t. VVDD  
VEN  
-0.8  
-1.2  
50  
-1.6  
V
VENHYS  
Enable hysteresis  
mV  
BOOTSTRAP  
RBOOT3V3  
VBOOT to VVDD, VVDD = 3.3 V  
VBOOT to VVDD, VVDD = 5 V  
50  
30  
Bootstrap switch resistances  
RBOOT5V  
OUTPUT DRIVER  
VBOOT - VSW = 3.3 V, ISRCE = 100  
mA  
RHDHI3V3  
HDRV pull-up resistance  
3.0  
5.5  
RHDLO3V3  
RLDHI3V3  
RLDLO3V3  
HDRV pull-down resistance  
LDRV pull-up resistance  
LDRV pull-down resistance  
LDRV, HDRV rise time  
LDRV, HDRV fall time  
VBOOT - VSW = 3.3 V, ISINK = 100 mA  
VVDD = 3.3 V, ISOURCE = 100 mA  
VVDD = 3.3 V, ISINK = 100 mA  
CLOAD = 1 nF  
1.5  
3.0  
1.0  
15  
3
5.5  
2.0  
35  
(5)  
tRISE  
(5)  
tFALL  
CLOAD = 1 nF  
10  
25  
ns  
TDEAD HL Adaptive timing HDRV to LDRV  
TDEAD LH Adaptive timing LDRV to HDRV  
SWITCH NODE  
No load  
15  
5
30  
45  
No load  
15  
35  
ILEAK  
Leakage current  
VEN = VVDD  
-2  
µA  
°C  
THERMAL SHUTDOWN  
(5)  
tSD  
Shutdown temperature  
Hysteresis  
145  
15  
(3) tCAL and tSS track with temperature and input voltage  
(4) Soft start time is a function of VREFIN. See Applications section for further detail.  
(5) Ensured by design. Not production tested.  
Copyright © 2007, Texas Instruments Incorporated  
5
Product Folder Link(s): TPS40042  
TPS40042  
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SLUS777NOVEMBER 2007  
TYPICAL CHARACTERISTICS  
Quiescent Current (Non-Switching)  
Shutdown Current  
1.100  
1.000  
0.900  
110  
105  
100  
VDD = 2.25 V  
VDD = 5.5 V  
95  
0.800  
0.700  
0.600  
0.500  
0.400  
90  
85  
80  
VDD = 2.25 V  
VDD = 5.5 V  
75  
70  
−40 −20  
0
20  
40 60  
80 100 120  
−20  
0
20  
40 60  
80 100 120  
−40  
Temperature − C  
Temperature − C  
Figure 1.  
Figure 2.  
UVLO Threshold  
EN Threshold  
2.200  
2.150  
2.100  
2.050  
−0.8  
−0.9  
−1.0  
−1.1  
−1.2  
−1.3  
Turn ON  
Turn OFF  
VDD = 5 V  
2.000  
1.950  
1.900  
1.850  
1.800  
−1.4  
−1.5  
−1.6  
−40 −20  
0
20  
40 60  
80 100 120  
−40 −20  
0
20  
40 60  
80 100 120  
Temperature − C  
Temperature − C  
Figure 3.  
Figure 4.  
Oscillator Frequency  
Soft Start Time; VREFIN = 1.5 V  
700  
650  
6.6  
6.5  
6.4  
VDD = 2.25V  
VDD = 3.9V  
VDD = 5.5V  
VDD = 5 V  
600  
550  
500  
6.3  
6.2  
6.1  
6.0  
-40  
-20  
0
20  
40  
60  
80  
100 120  
−40 −20  
0
20  
40 60  
80 100 120  
T - Temperature - °C  
Temperature − C  
Figure 5.  
Figure 6.  
6
Copyright © 2007, Texas Instruments Incorporated  
Product Folder Link(s): TPS40042  
TPS40042  
www.ti.com  
SLUS777NOVEMBER 2007  
TYPICAL CHARACTERISTICS (continued)  
PWM Gain  
ILIM Threshold  
6.1  
450  
400  
R
= 2.5 k  
R
= 12.5 kΩ  
R
=nil  
C
C
C
VDD = 5 V  
6.0  
350  
300  
250  
200  
150  
100  
50  
5.9  
5.8  
5.7  
5.6  
5.5  
−40 −20  
0
20  
40 60  
80  
100 120  
−40 −20  
0
20  
40 60  
80  
100 120  
Temperature − C  
Temperature − C  
Figure 7.  
Figure 8.  
Bootstrap Switch Resistance  
Minimum Controllable Pulse Width  
80  
100  
95  
90  
85  
80  
75  
70  
VDD = 3.3 V  
VDD = 5 V  
70  
60  
50  
40  
30  
20  
65  
60  
VDD = 2.25 V  
VDD = 5.5 V  
−40 −20  
0
20  
40 60 80 100 120  
−40 −20  
0
20  
40 60  
80  
100 120  
Temperature − C  
Temperature − C  
Figure 9.  
Figure 10.  
Maximum Duty Cycle  
SW Node Leakage Current  
100  
0.00  
−0.50  
−0.10  
VDD = 5.5 V  
VDD = 2.25 V  
VDD = 5.5 V  
98  
96  
−0.15  
−0.20  
−0.25  
−0.30  
94  
−0.35  
−0.40  
92  
90  
−0.45  
−0.50  
−40 −20  
0
20  
40 60  
80 100 120  
−40 −20  
0
20  
40 60  
80  
100 120  
Temperature − C  
Temperature − C  
Figure 11.  
Figure 12.  
Copyright © 2007, Texas Instruments Incorporated  
7
Product Folder Link(s): TPS40042  
TPS40042  
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SLUS777NOVEMBER 2007  
DEVICE INFORMATION  
TERMINAL CONFIGURATION  
The package is an 10-pin SON (DRC) package.  
1
REFIN  
EN  
HDRV 10  
2
3
4
5
SW  
BOOT  
LDRV  
GND  
9
8
7
6
FB  
COMP  
VDD  
Figure 13. DRC Package Terminal Configuration (Top View)  
Table 1. TERMINAL FUNCTIONS  
TERMINAL  
I/O  
DESCRIPTION  
NAME  
NO.  
Input (bootstrapped) supply to the high-side gate driver for PWM enabling the gate of the  
high side FET to be driven above the input supply rail. Connect a ceramic capacitor from this  
pin to SW. This capacitor is charged from the VDD pin voltage through an internal switch.  
The switch is turned ON during the off time of the converter. To slow down the turn on of the  
external MOSFET, a small resistor (1 to 3 ) may be placed in series with the bootstrap  
capacitor. See Applications Section to calculate the appropriate value.  
BOOT  
8
I
Output of the error amplifier and connection node for loop feedback components. The  
voltage at this pin determines the duty cycle for the PWM. Optionally, a resistor from this pin  
to ground is used to determine the voltage threshold used for short circuit protection. (See  
Application Section)  
COMP  
4
O
Low threshold R = 2.4 k, ±10%  
Mid threshold R = not installed  
High threshold R = 12 k, ±10%  
Active low enable input allows ON/OFF operation of the controller. If power is applied to the  
TPS40042 while the EN pin is allowed to float high, the TPS40042 remains disabled (both  
external switches are held OFF). Only when the EN pin is pulled to 1.2 V below VDD is the  
TPS40042 allowed to start. An internal 100-kresistor is connected between VDD and EN  
to provide pull up. Connect this pin to GND to bypass the enable function.  
EN  
FB  
2
3
I
I
Inverting input of the error amplifier. In closed loop operation, the voltage at this pin is at the  
same potential as the REFIN pin. A series resistor divider from the converter output to  
ground, with the center connection tied to this pin, determines the value of the regulated  
output voltage. This pin is also a connection node for loop feedback components.  
GND  
6
10  
7
Electrical ground connection for the device.  
This is the gate drive output for the high side N-channel MOSFET switch for PWM. It is  
referenced to SW and is bootstrapped for enhancement of the high-side switch.  
HDRV  
LDRV  
O
O
Gate drive output for the low-side synchronous rectifier (SR) N-channel MOSFET.  
Non-inverting imput to the error amplifier. A precision voltage must be applied to this pin  
before the TPS40042 is enabled. Since this input is connected directly to the non-inverting  
pin of the error amplifier, the quality of the voltage at this pin has a direct impact on the  
quality of the output voltage.  
REFIN  
1
I
Connection to the switched node of the converter and the power return for the upper gate  
driver. There should be a high current return path from the source of the upper MOSFET to  
this pin. It is also used by the adaptive gate drive circuits to minimize the dead time between  
upper and lower MOSFET conduction.  
SW  
9
5
O
I
Power input to the device. This pin should be locally bypassed to GND with a low ESR  
ceramic capacitor of 1 µF or greater.  
VDD  
Thermal pad used to conduct heat from the device. This pad should be tied externally to a  
ground plane. See Application Section for PC board layout information.  
PPAD  
8
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TPS40042  
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SLUS777NOVEMBER 2007  
Block Diagram  
TPS40042  
VDD/2  
SW  
VDD  
EN  
5
2
VDD  
UVLO  
100-ns  
Delay  
100 kW  
SDN  
2 V  
EN  
Fault  
Logic  
ILIMSET  
VDD  
Current Limit  
Comparator  
(VDD- 1.2 V)  
LDRV  
REFIN  
1
SDN  
CLK  
8
BOOT  
PWM  
Comparator  
HI  
+
+
Soft  
Start  
10 HDRV  
PWM  
Logic  
FB  
3
4
Adaptive  
Gate  
Drive  
Ramp  
Oscillator  
9
7
SW  
VDD  
COMP  
0.6 V  
VREF  
LO  
VDD  
LDRV  
ILIMSET  
(one of three levels)  
Calibration  
Circuit  
Reference  
Thermal  
Shutdown  
Pre-Bias  
6
UDG-07139  
GND  
Figure 14. Functional Block Diagram  
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SLUS777NOVEMBER 2007  
APPLICATION INFORMATION  
Functional Description  
The TPS40042 is a fixed frequency voltage mode synchronous buck controller. In operation, the Synchronous  
Rectifier (SR) is allowed to conduct current in both directions, allowing a converter to operate in continuous  
cnduction (CCM) mode, even under no load conditions, simplifying feedback loop compensation requirements.  
During startup, internal circuitry modulates the switching of the synchronous rectifier to prevent discharging of the  
output if a pre-biased condition exists.  
Voltage Reference Input  
An external voltage reference input is required. During operation, the voltage must be between 0.5v and 1.5v.  
REFIN may be used in either of two ways:  
As a reference input. In this case, REFIN must be stable before the TPS40042 is enabled. the internal  
soft-start controls the rate of rise of the output voltage during startup. The time to reach output voltage  
regulation is dependent on the voltage on the REFIN pin.  
As a tracking input. If REFIN is held to zero until soft-start has completed (7.6-ms), then REFIN will control  
the output voltage during startup and regulation.  
Voltage Error Amplifier  
The error amplifier has a bandwidth of greater than 5 MHz, and open loop gain of at least 55 dB. The output  
voltage swing is limited to just above and below the oscillator ramp levels to improve transient response.  
Loop Compensation  
Voltage mode buck type converters are typically compensated using Type III networks. Please refer to the  
Design Example for detailed methodology in designing feedback loops for voltage mode converters.  
When designing the compensation for the feedback loop, remember that a low  
impedance compensation network combined with a long network time constant  
DESIGN  
HINT:  
can cause the short circuit threshold setting to not be as expected. The time  
constant and impedance of the network connected from COMP to FB should be  
as shown in Equation 1 to guarantee no interaction with the short circuit  
threshold setting.  
æ
ç
è
ö
t
-
÷
FB´CFB ø  
0.4 V  
R
´ e  
< 10mA  
R
FB  
(1)  
where  
t is 1 ms, the sampling time of the short circuit threshold setting circuit  
RFB and CFB are the values of the feedback components. e.g. R3 and C4 of the Design Example.  
Oscillator  
The oscillator frequency is internally fixed. The TPS40042 operating frequencies is nominally 600 kHz.  
UVLO  
When the input voltage is below the UVLO threshold, the TPS40042 turns off the internal oscillator and holds all  
gate drive outputs in the low (OFF) state. When the input rises above the UVLO threshold, and the EN pin is  
below the turn ON threshold, the start-up sequence is allowed to begin.  
10  
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Enable and Start-Up Sequence  
The EN pin of the TPS40042 is internally pulled to VDD. When power is applied to VDD, the EN pin is allowed to  
float high, and the TPS40042 remains OFF. Only when the EN pin is externally pulled below the threshold  
voltage of (VVDD - 1.2 V) is the TPS40042 allowed to start. When enabled, the TPS40042 enters a calibration  
cycle where the short circuit current threshold is determined. The TPS40042 monitors the current out of the  
COMP pin and selects a threshold based on the sensed value of the current. See Selecting the Short Circuit  
Current Limit Threshold section for for details. When this calibration time is completed, the soft-start cycle is  
allowed to begin. See Figure 15 below.  
EN  
COMP  
V
OUT  
Configure  
Soft Start  
ILIM  
Threshold  
1.6  
6
T - Time - ms  
Figure 15. Startup with VREFIN =1.5 V  
DESIGN  
HINT:  
If the enable function is not used, the EN pin should be connected to ground  
(GND).  
DESIGN  
HINT:  
When designing the feedback loop compensation, ensure the capacitors used  
are not so large that they distort the COMP pin calibration waveform.  
Soft Start  
At the end of a calibration cycle, the TPS40042 slowly increases the voltage to the non-inverting input of the  
error amplifier. In this way, the output voltage slowly ramps up until the voltage on the non-inverting input to the  
error amplifier reaches the external (VREFIN) reference voltage. At that time, the voltage at the non-inverting input  
to the error amplifier remains at the applied reference voltage.  
During the soft-start interval, pulse-by-pulse current limiting is active. If seven consecutive current limit pulses are  
detected, overcurrent is declared and a timeout period equivalent to seven calibration/soft-start cycles goes into  
effect. See Output Short Circuit Protection section for details.  
Since the rate of rise of the output voltage is constant with different REFIN voltage levels, the actual soft start  
time is directly proportional to the value of the external reference voltage. The rate of rise at the non-inverting  
input of the error amplifier is 0.25 V/ms. The rate of rise measured at the output terminals of the DC/DC  
converter will be increased by the output voltage-to-reference voltage ratio.  
æ V  
ö
÷
ø
REFIN  
t
=
´ 6.0ms  
ç
SS  
1.5V  
è
(2)  
For example, if a 1-V external reference is applied for a 1.5-V output DC/DC converter, the soft-start  
time-to-output voltage regulation is 4 ms.  
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Pre-Bias Startup  
The TPS40042 supports pre-biased output voltage applications. In cases where the output voltage is held up by  
external means while the TPS40042 is off, full synchronous rectification is disabled during the initial phase of soft  
starting the output voltage. When the first PWM pulses are detected during soft start, the controller slowly  
initiates synshronous rectification by starting the synchronous rectifier with a narrow on time. It then increments  
that on time on a cycle-by-cycle basis until it coincides with the time dictated by (1-D), where D is the duty cycle  
of the converter. This approach prevents the sinking of current from a pre-biased output, and ensures the output  
voltage startup and ramp to regulation is smooth and controlled.  
NOTE:  
If the output is pre-biased, PWM pulses start when the internal soft-start voltage rises  
above the error amplifier input (FB pin).  
Figure 16 below depicts the waveform of the HDRV and LDRV output signals at the beginning PWM pulses.  
When HDRV turns off, diode rectification is enabled. Before the next PWM cycle starts, LDRV is turned on for a  
short pulse. With every clock cycle, the leading edge of LDRV is modulated, increasing the on time of the  
synchronous rectifier. Eventually, the leading edge of LDRV coincides with the falling edge of HDRV to achieve  
full synchronous rectification. During normal operation of the converter, the TPS40042 operates in full two  
quadrant source/sink mode.  
Figure 17 shows the startup waveform of a 1.2-V output converter under three different pre-biased output  
conditions. The lowest trace is when there is no pre-bias on the output. The center and top most traces indicate  
converter startup with 0.5-V and 1.0-V pre-bias conditions.  
V
V
= 5 V  
IN  
= 1.2 V  
OUT  
(200 mV/div)  
PREBIAS = 1 V  
V
HDRV  
PREBIAS = 0.5 V  
PREBIAS = 0 V  
V
LDRV  
t − Time − 2 µs/div  
Figure 16. MOSFET Drivers at Beginning of Soft Start  
t − Time − 500 µs/div  
Figure 17. Startup Waveforms; VREFIN = 0.6 V  
The recommended output voltage pre-bias range is less than or equal to 90% of the final regulation voltage. A  
pre-biased output voltage of 90% to 100% of final regulation could lead to the sinking of current from the pre-bias  
source. If the pre-biased voltage is greater than the designed converter output regulation voltage, then upon the  
completion of the soft-start interval, the TPS40042 turns ON the Synchronous Rectifier, therby drawing current  
from the output to bring the output voltage into regulation. Note that this may cause some undershoot of the  
output voltage before entering regulation.  
Output Short Circuit Protection  
To minimize circuit losses, the TPS40042 uses the RDS(on) of the upper MOSFET switch as the current sensing  
element. The current limit comparator, initially blanked during the first portion of each switching cycle, senses the  
voltage across the high-side MOSFET when it is fully ON. This voltage is compared to an internally selected  
short circuit current (SCC) limit threshold voltage. If the comparator senses a voltage drop across the high-side  
MOSFET greater than the SCC limit threshold, it outputs an OC pulse. This terminates the current PWM pulse  
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preventing further current ramp-up, and sets the fault counter to count up one count on the next clock cycle.  
Similarly, if no OC pulse is detected, the fault counter decrements by one count. If seven OC pulses are  
summed, a fault condition is declared and the upper switch of the PWM output of the chip is immediately  
disabled (turned OFF) and remains that way until the fault time-out period has elapsed. Both HDRV and LDRV  
drivers are kept OFF during the fault time-out.  
The fault time-out period is determined by cycling through seven internal soft-start time periods. At the end of the  
fault time-out period, startup is attempted again.  
The main purpose is for hard fault protection of the power switches. The internal SCC voltage has a positive  
temperature coefficient designed to improve the short circuit threshold tolerance variation with temperature.  
However, given the tolerance of the voltage thresholds and the RDS(on) range for a MOSFET, it is possible to  
apply a load that thermally damages the external MOSFETs.  
Selecting the Short Circuit Current Limit Threshold  
The TPS40042 uses one of three user selectable voltage thresholds. During the calibration interval at power on  
or enable (Figure 15), the TPS40042 monitors the current out of the COMP pin and selects a threshold based on  
the sensed value. If the current is zero; that is, no resistor is connected between COMP and GND, then the  
threshold voltage level is 180 mV. If a 2.4-kresistor is connected between COMP and GND, then the threshold  
voltage level is 105 mV. If a 12-kresistor is connected between COMP and GND, then the threshold voltage is  
310 mV.  
Once calibration is complete, the selected SCP threshold level is latched into place and remains constant. In  
addition, the sensing circuits on COMP pin during calibration are disconnected from the COMP pin, and soft start  
is allowed to begin.  
Synchronous Rectification and Gate Drive  
In a buck converter, when the upper switch MOSFET turns off, current is flowing in the inductor to the load. This  
current cannot be stopped immediately without using infinite voltage. To give this current a path to flow and  
maintain voltage levels at a safe level, a rectifier or catch device is used. This device can be either a diode, or it  
can be a controlled active device. The TPS40042 provides a signal to drive an N-channel MOSFET as a  
synchronous rectifier (SR). This control signal is carefully coordinated with the drive signal for the main switch so  
that there is minimum dead time from the time that the SR turns OFF and the upper switch MOSFET turns ON,  
and minimum delay from when the upper switch MOSFET turns OFF and the SR turns ON.  
NOTE:  
The longer the time spent in diode conduction during the rectifier conduction period,  
the lower the converter efficiency.  
The drivers for the external HDRV and LDRV MOSFETs are capable of driving a gate to source voltage of  
approximately 5 V. At VDD = 5 V, the drivers are capable of driving MOSFETs appropriate for a 15-A converter.  
The LDRV driver switches between VDD and ground, while HDRV driver is referenced to SW and switches  
between BOOT and SW. The drivers have non-overlapping timing that is governed by an adaptive delay circuit  
that minimizes body diode conduction in the synchronous rectifier.  
Gate Drive Resistors  
The TPS40042’s adaptive gate delay circuitry monitors the HDRV-to-SW and LDRV-to-GND voltages to  
determine the state of the external MOSFET switches. Any voltage drop across an external series gate drive  
resistor is sensed as reduced gate voltage during turn-off and may interfere with the MOSFET timing.  
DESIGN  
HINT:  
A resistor should never be placed in series with the synchronous rectifiers gate  
and the gate trace should be kept as short as practical in the layout.  
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Total Gate Charge  
The internal voltage sensing of the external MOSFET gate voltages used by the TPS40042 to control the  
dead-times between turn-off and turn-on can be sensitive to large MOSFET gate charges, especially when  
different gate charges are used for the high-side and low-side MOSFETs. Increased gate charge increases  
MOSFET switching times and decreases the dead-time between the MOSFETs switching.  
MOSFETs with no more than 40 nC of total gate charge should be selected.  
DESIGN  
HINT:  
The upper switch MOSFET’s gate charge should be no less than 60% of the  
synchronous rectifier’s gate charge to minimize the turn-on/turn-off delay  
mismatch between the high-side and low-side MOSFET.  
Synchronous Rectifier dV/dt Turn-On  
As the upper switch MOSFET turns on, the switch node voltage rises from close to ground to VIN in a very short  
period of time (typically 10 ns to 30 ns) resulting in very high voltage spikes on the switch node. The construction  
of a MOSFET creates parasitic capacitances between its terminals, particularly the gate-to-drain and  
gate-to-source, creating a capacitive divider between the drain and source of the MOSFET with the gate at its  
mid-point. If the gate-to-drain charge (QGD) is larger than the gate-to-source charge (QGS), the capacitive divider  
places proportionally more charge on the gate of the MOSFET as the switch node voltage rises than is shunted  
to GND. In extreme cases, this can cause the synchronous rectifier gate voltage to rise above the turn on  
threshold voltage of the MOSFET and causes cross-conduction. This is called dV/dt turn-on. It increases power  
dissipation in both the high-side and the low-side MOSFET, reducing efficiency.  
Select a synchronous rectifier MOSFET with a QGD to QGS ratio of less than  
one and provide a wide, low resistance, low inductance loop in the synchronous  
rectifier gate drive circuit. (See Layout Consideration)  
DESIGN  
HINT:  
A resistor in series with the boost capacitor slows the turn on of the high-side  
MOSFET, and reduces the dV/dt of the switch node. See Boost Capacitor  
Series Resistor section.  
DESIGN  
HINT:  
Bootstrap for N-Channel MOSFET Drive  
The PWM duty cycle is limited to a maximum of 95%, allowing the bootstrap capacitor to charge during every  
cycle. During each PWM OFF period, the voltage on VDD charges the bootstrap capacitor. When the PWM  
switch is next commanded to turn ON, the voltage used to drive the MOSFET is derived from the voltage on this  
capacitor. Since this is a charge transfer circuit, the value of the bootstrap capacitor must be sized such that the  
energy stored in the capacitor on a per cycle basis is greater then the gate charge requirement of the MOSFET  
being used. See the Design Example section for details.  
Bootstrap Capacitor Series Resistor  
Since resistors should not be placed in series with the high-side gate, it may be necessary to place a small 1-Ω  
to 3-resistor in series with the bootstrap capacitor to control the turn-on of the main switching MOSFET and  
reduce the dV/dt rate of rise of the switch node voltage. A resistor placed between the BOOT pin and the  
bootstrap capacitor increases the series resistance during the turn-on of the high-side MOSFET, and has no  
effect during the high-side MOSFET’s turn-off period. This prevents the TPS40042 from sensing the upper switch  
MOSFET’s turn-off too early and reducing the upper switch MOSFET turn-off to the SR MOSFET turn-on delay  
timing too far.  
DESIGN  
HINT:  
To reduce EMI, place a small 1-to 3-resistor in series with the boost  
capacitor to control the turn-on of the main switching FET.  
External Schottky Diode for Low Input Voltage  
The TPS40042 uses an internal P-channel MOSFET switch between VDD and BOOT to charge the bootstrap  
capacitor during synchronous rectifier conduction time. At low input voltages, a MOSFET can not be turned on  
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hard enough to rapidly replenish the charge required to turn on an (high gate charge) external high-side  
MOSFET. For this situation, an external Schottky diode between the VDD and BOOT pins may be added. While  
the diode carries very small average current (QG x FSW) it may be required to carry several hundred mA of peak  
surge current. The diode should be rated for at least 500 mA of surge current. For higher input voltage  
applications, if a resistor is used in series with the boost capacitor, connect the diode to the junction of the  
resistor and capacitor to remove the added resistance from the capacitor’s charge path.  
For low input voltages, and a high gate charge upper switch MOSFET, a small  
Schottky diode should be placed from VDD to BOOT. Do not use a resistor in  
series with the boost capacitor.  
DESIGN  
HINT:  
VDD Bypass and Filtering  
To prevent switching noise from being injected into the TPS40042 control circuitry, a ceramic capacitor (1 µF  
minimum) must be placed as close to the VDD pin and GND pad as possible.  
VDD Filter Resistor  
To further limit the noise on VDD, a small 1-to 2-resistor may be placed between the input voltage and the  
VDD pin to create a small filter to VDD. The resistor should connect near the drain of the upper switch MOSFET  
to prevent trace IR drops from increasing the sensed voltage drop. The resistor itself should be placed close to  
Pin 5.  
The current through the resistor includes the device's no-load switching current of 2 mA plus gate switching  
current. The voltage drop induced across this resistor reduces the VDD-to-SW voltage sensed by the over  
current protection circuitry within the device. This results with the apparent voltage drop across the upper switch  
MOSFET being increased, thereby decreasing the current at which protection will occur. To minimize this effect,  
the resistor value should be selected to yield less than a 25-mV drop.  
Thermal Shutdown  
If the junction temperature of the device reaches the thermal shutdown level, the PWM and the oscillator are  
turned off and HDRV and LDRV are driven off. When the junction cools to the required level, the PWM soft starts  
as during a normal power-up cycle.  
Package Power Dissipation  
The power dissipation in a controller is largely dependent on the MOSFET driver currents and the input voltage.  
The driver current is proportional to the total gate charge, Qg, of the external MOSFETs, and the operating  
frequency of the converter. The total power dissipation is:  
P = V ´ Iq + f  
´ Q  
(
+ Q  
)
)
(
T
DD  
SW  
SW SR  
(3)  
where  
IQ is the quiescent operating current (neglecting drivers)  
QgSWis the total gate charges of the upper switch MOSFET  
QgSR is the total gate charges of the synchronous rectifier MOSFET  
The maximum power capability of the PowerPad™ package is dependent on the layout as well as air flow. The  
thermal impedance from junction-to-air assuming 2-oz. copper trace and thermal pad with solder and no air flow  
is detailed in Reference [5]  
.
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PCB Layout Guidelines  
A synchronous BUCK power stage has two primary current loops, the input current loop that carries high ac  
discontinuous current and an output current loop that carries high dc continuous current. The output current loop  
carries low ac inductor ripple current.  
VIN  
VDD Filter  
(Optional)  
Main  
Gate  
Drive  
TPS40042  
Input  
Current  
Loop  
Reference  
Input  
REFIN  
HDRV  
SW  
VOUT  
EN  
EN  
Enable Bypass  
(Optional)  
FB  
BOOT  
LDRV  
GND  
BOOST Resistor  
(Optional)  
Output  
Current  
Loop  
COMP  
VDD  
Bypass  
SR Gate  
Drive  
VDD  
PPAD  
Current  
Limit Set  
Resistor  
SignalGround  
PowerGround LocateComponentsOverPowerGround  
UDG-07140  
LocateComponents OverSignalGroundIsland  
Figure 18. Synchronous BUCK Power Stage  
Power Component Routing  
As shown in Figure 18, the input current loop contains the input capacitors, the switching MOSFET, the inductor,  
the output capacitors, and the ground path back to the input capacitors. To keep this loop as small as possible, it  
is good practice to place some ceramic capacitance directly between the drain of the main switching MOSFET  
and the source of the synchronous rectifier (SR) through a power ground plane directly under the MOSFETs.  
The output current loop includes the filter inductor, the output capacitors, and the ground return between the  
output capacitors and the source of the synchronous rectifier MOSFET. As with the input current loop, the ground  
return between the output capacitor ground and the source of the SR source should be routed under the inductor  
and MOSFETs to minimize the power loop area.  
Device to Power Stage Interface  
The TPS40042 uses a very fast break-before-make anti-cross conduction circuit to minimize power loss. Adding  
external impedance in series with the gates of the switching MOSFETs adversely affects the converter’s  
operation and must be avoided. The loop impedance (HDRV-to-gate plus source-to-SW and LDRV-to-SR gate  
plus SR source-to-GND) should be kept to less than 20 nH to avoid possible cross-conduction. The HDRV and  
LDRV connections should widen to 20 mils as soon as possible out from the device pin.  
The return for the main switching MOSFET gate drive is the SW pin of the TPS40042. The SW pin should be  
routed to the source of the main switching FET with at least a 20-mils wide trace as close to the HDRV trace as  
possible to minimize loop impedance.  
The return for the SR MOSFET gate drive is the TPS40042 GND pad. The GND pad should be connected  
directly to the source of the SR with at least a 20-mil wide trace directly under the LDRV trace. Use a minimum of  
2 parallel vias to connect the GND pad to the source of the SR if multiple layers are used.  
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A small, less than 3-resistor may be added in series with the BOOT pin to slow the turn-on of the upper switch  
MOSFET, thereby reducing the rising edge slew-rate of the switch node. In turn, this reduces EMI, increases  
upper MOSFET OFF to SR ON dead time, and minimizes induced dV/dt turn-on of the SR when the upper switch  
MOSFET turns on. It is recommended customers make provisions on their boards for this resistor and not use  
resistors in series with MOSFET gate leads.  
VDD Filtering  
A ceramic capacitor, 1 µF minimum, must be placed as close to the VDD pin and GND pad as possible with a  
15-mil wide (or greater) trace. If used, a small series connected resistor (1 to 2 ) may be placed less than  
100 mils from the TPS40042 between the supply input voltage and the VDD pin to further reduce switching noise  
on the VDD pin.  
NOTE:  
The voltage drop across this resistor affects the level at which the over-current circuit  
operates by filtering the sensed VDD voltage.  
Device Connections  
If a current limit resistor is used (COMP to GND), it must be placed within 100 mils of the COMP pin to limit noise  
injection into the PWM comparator. Compensation components (feedback divider, and associated error amplifier  
components) should be placed over a signal ground island connected to the power ground at the GND pad  
through a 10-mil wide trace. If multiple layers are used, connect to GND through a single via on an internal layer  
opposite the connection to the source of the synchronous rectifier.  
PowerPAD™ Layout  
The PowerPAD™ package provides low thermal impedance for heat removal from the device. The PowerPAD™  
derives its name and low thermal impedance from the large bonding pad on the bottom of the device. The circuit  
board must have an area of solder-tinned-copper underneath the package. The dimensions of this area depend  
on the size of the PowerPAD™ package. See PCB Layout Guidelines for further information.  
Thermal vias connect this area to internal or external copper planes and should have a drill diameter sufficiently  
small so that the via hole is effectively plugged when the barrel of the via is plated with copper. This plug is  
needed to prevent wicking the solder away from the interface between the package body and the solder-tinned  
area under the device during solder reflow. Drill diameters of 0.33 mm (13 mils) works well when 1-oz copper is  
plated at the surface of the board while simultaneously plating the barrel of the via. If the thermal vias are not  
plugged when the copper plating is performed, then a solder mask material should be used to cap the vias with a  
diameter equal to the via diameter plus 0.1 mm minimum. This capping prevents the solder from being wicked  
through the thermal vias and potentially creating a solder void under the package. Refer to PowerPAD™  
Thermally Enhanced Package[2] for more information on the PowerPAD™ package.  
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DESIGN EXAMPLES  
Example 1. A 5-V to 1.8-V DC-to-DC Converter Using a TPS40042  
The following example illustrates the design process and component selection for a 5-V to 0.9-V DDR  
termination synchronous buck converter. The design goal parameters are given in the table below. A list of  
symbol definitions is found at the end of this section.  
Design Goal Parameters  
SYMBOL  
VIN  
PARAMETER  
Input voltage  
TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
V
4.5  
5.5  
75  
VINripple  
VOUT  
Input ripple  
IOUT = 6 A  
mV  
V
Output voltage  
Line regulation  
Load regulation  
Output ripple  
Transient deviation  
Output current  
Switching frequency  
Size  
IOUT = 0 A, VIN = 5 V  
VIN = 4.5 A to 5.5 V  
IOUT = 0 A to 6 A  
0.9  
0.5%  
0.5%  
VRIPPLE  
VTRANS  
IOUT  
IOUT = 6 A  
36  
6
mV  
IOUT = -2 A to 2 A, IOUT = 2 A to -2 A  
VIN = 4.5 V to 5.5 V  
40  
-6  
A
FSW  
600  
kHz  
In2  
1
For this example, the schematic shown in Figure 19 is used.  
Figure 19. TPS40042 Sample Schematic  
Inductor Selection  
The inductor is typically sized for 30% peak-to-peak ripple current (IRIPPLE) Given this target ripple current, the  
required inductor size is calculated by:  
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V
IN(max) * VOUT  
 
0.3   IOUT  
VOUT  
1
 
VIN(max) FSW  
L +  
(4)  
Solving with VIN(max) = 5.5 V, an inductor value of 0.69 µH is obtained. A standard value of 0.8 µH is selected,  
resulting in 1.56-A peak-peak ripple. The RMS current through the inductor is approximated by the equation:  
2
2
RIPPLEǓ + ǸI  
2
2
1
12  
1
12  
Ǹ
ǒ
I
ǒ
OUTǓ  
ǒ
I
RIPPLEǓ  
ǒ
L(avg)Ǔ  
I
+
I
)
)
L(rms)  
(5)  
Using Equation 5, the maximum RMS current in the inductor is about 6 A.  
Output Capacitor Selection (C8 & C9)  
The selection of the output capacitor is typically driven by the output load transient response requirement.  
Equation 6 and Equation 7 estimate the output capacitance required for a given output voltage transient  
deviation.  
2
I
´ L  
TRAN(max)  
C
=
when V  
< 2 ´ V  
OUT(min)  
IN(min) OUT  
V
(
- V  
´ V  
)
´ 2  
IN(min)  
OUT  
TRAN  
(6)  
(7)  
ITRAN(max)2 ´L  
COUT(min)  
=
when V  
> 2´ VOUT  
IN(min)  
VOUT ´ VTRAN ´ 2  
For this example, Equation 7 is used in calculating the minimum output capacitance.  
Based on a 4-A load transient with a maximum 40-mV deviation, a minimum of 177-µF output of capacitance is  
required.  
The output ripple is divided into two components. The first is the ripple voltage generated by inductor ripple  
current flowing through the output capacitor's capacitance, and the second is the voltage generated by the ripple  
current flowing in the output capacitor's ESR. The maximum allowable ESR is then determined by the maximum  
ripple voltage and is approximated by:  
I
* ǒ Ǔ  
RIPPLE  
V
RIPPLE(total)  
C
 F  
SW  
V
* V  
RIPPLE(cap)  
OUT  
RIPPLE(total)  
ESR  
+
+
MAX  
I
I
RIPPLE  
RIPPLE  
(8)  
Based on 177 µF of capacitance, 1.56-A ripple current, 600-kHz switching frequency and a design goal of 36-mV  
ripple voltage, we calculate a maximum ESR of 13.6 m. Two 1206, 100-µF, 6.3-V, X5R ceramic capacitors are  
selected to provide significantly less than 13.6 mof ESR.  
Peak Current Rating of Inductor  
With output capacitance known, it is now possible to calculate the charging current during start-up and determine  
the minimum saturation current rating for the inductor. The start-up charging current is approximated by:  
VOUT   COUT  
ICHARGE  
+
TSS  
(9)  
Using the TPS40042’s soft-start time of 5-ms, COUT = 200 µF and VOUT = 0.9 V, ICHARGE is found to be 40 mA.  
The peak current rating of the inductor is now found by:  
1 ǒ  
Ǔ
L
L(peak) + IOUT(max)  
)
IRIPPLE ) ICHARGE  
2
(10)  
The inductor requirements are summarized in the table below.  
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Inductor Requirements  
PARAMETER  
SYMBOL  
L
VALUE  
0.8  
UNITS  
µH  
Inductance  
RMS current (thermal rating)  
Peak current (saturation rating)  
IL(rms)  
IL(peak)  
6.0  
A
7.08  
A PG0083.801, 0.8 µH is selected for its small size, low DCR and high current handling capability.  
Input Capacitor Selection (C1 & C2)  
The input voltage ripple is divided between capacitance and ESR. For this design, VRIPPLE(CAP) = 50 mV and  
VRIPPLE(ESR) = 25 mV. The minimum capacitance and maximum ESR are estimated by:  
ILOAD   VOUT  
VRIPPLE(cap)   VIN   FSW  
CIN(min)  
+
(11)  
(12)  
VRIPPLE(ESR)  
ESRMAX  
+
1 ǒ  
2
Ǔ
ILOAD  
)
IRIPPLE  
For this design, CIN > 60 µF and ESR < 3.5 m. The RMS current in the input capacitors is estimated by:  
2
2
ƫ
VOUT VOUT   IOUT  
1
12  
ǒ
OUTǓ  
ǒ
Ǔ
ƪI  
I
RMS(cin) + IIN(rms) * IIN(avg)  
+
)
IRIPPLE  
 
*
Ǹ
VIN  
VIN  
(13)  
With VIN = VIN(max), the input capacitors must support a ripple current of 1.56 ARMS. Two 1206, 100-µF, X5R  
ceramic capacitors with about 2-mESR and a 2-A RMS current rating are selected. It is important to check the  
dc bias voltage derating curves to ensure the capacitors provide sufficient capacitance at the working voltage.  
MOSFET Switch Selection (Q1 & Q2)  
The switching losses for the upper switch MOSFET are estimated by:  
Q
) Q  
*V  
GS2_Q1  
GD_Q1  
1
2
ǒ
Ǔ
P
+
  V   I  
  T  
) T  
  F  
+ V   I  
 
  F  
SW  
G1SW  
IN  
OUT  
RISE  
FALL  
SW  
IN  
OUT  
V
DD  
TH  
R
DRIVE  
(14)  
For this design, switching losses are higher at low input voltage due to the lower gate drive current. Designing for  
1 W of total losses in both MOSFETS and 20% of the total MOSFET losses in switching losses, we can estimate  
our maximum gate-to-drain charge for the design at:  
P
V
* V  
t
 
G1SW  
DD  
1
Q
) Q  
t
 
GS2_Q1  
GD_Q1  
V
  I  
R
F
IN  
OUT  
DRIVE  
SW  
(15)  
For a low-gate threshold MOSFET, and the TPS40042’s 5 and 3 drive resistances, we estimate a maximum  
QGS2+QGD of 10.8 nC.  
The conduction losses in the upper switch MOSFET are estimated by the RMS current through the MOSFET  
times its RDS(on)  
:
2
2
V
2
OUT  
1
12  
ǒ
ƪI  
OUTǓ  
ǒ
I
Ǔ
ƫ
  R  
P
+ D   
)
+
  I  
  R  
L(rms) DS(on_Q1)  
CON_Q1  
RIPPLE  
DS(on)  
V
IN  
(16)  
Estimating about 30% of total MOSFET losses to be high-side conduction losses, the maximum RDS(on) of the  
high-side MOSFET can be estimated by:  
PCON_Q1  
RDS(on_Q1)  
+
VOUT  
VIN  
2
IL(rms)  
 
(17)  
For this design, with IL_RMS = 6 ARMS and 4.5 V to 0.9 V, RDS(on_Q1) is < 39 mfor the upper switch MOSFET.  
20  
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Estimating 50% of total MOSFET losses are in the SR as conduction losses, repeat equation 14. Then calculate  
the maximum RDS(on) of the SR by the equation:  
PCON_Q2  
RDS(on_Q2)  
+
VOUT  
VIN  
2
ǒ1 * Ǔ  
IL(rms)  
 
(18)  
For this design IL_RMS = 6 A at 5.5 V to 0.9 V RDS(on_Q2) < 15.9 m. The table below summarizes the MOSFET  
requirements.  
MOSFET Requirements  
PARAMETER  
SYMBOL  
RDS(on_Q1)  
QGS2_Q1 +QGD_Q1  
RDS(on_Q2)  
VALUE  
UNITS  
mΩ  
High-side FET RDS(on)  
39  
High-side FET turn-on charge  
Low-side FET RDS(on)  
10.8  
15.9  
nC  
mΩ  
IRF7910 has an RDSON(max) of 15 mat 4.5-V gate drive,QGD of 6.2 nC, and QGS2 of 2 nC.  
Bootstrap Capacitor (C7)  
To ensure proper charging of the upper switch MOSFET gate, limit the ripple voltage on the bootstrap capacitor  
to < 5% of the minimum gate drive voltage of 3.0 V.  
20   QGS_Q1  
CBOOST  
+
VIN(min)  
(19)  
Based on the IRF7910 MOSFET with a maximum total gate charge of 26 nC, calculate a minimum of 116 nF of  
capacitance. The next higher standard value of 220 nF is selected.  
VDD Bypass Capacitor (C6)  
Select a 1.0-µF ceramic bypass capacitor for VDD.  
VDD Filter Resistor (R7)  
An optional resistor in series with VDD helps filter switching noise from the device. Driving the two IRF7910  
MOSFETs, with a typical total QG of 17 nC each, we calculate a maximum IDD current of 22 mA. The result of  
equation 19, leads to selecting a 1-resistor, and limits the voltage drop across this resistor to less than 25 mV.  
VRVDD(max)  
25 mV  
R
VDD t  
+
IDD  
2 mA ) ǒQ  
Ǔ
G_Q1 ) QG_Q2 FSW  
(20)  
Short Circuit Protection (R2)  
The TPS40042 use the forward drop across the upper switch MOSFET during the ON time to measure the  
inductor current. The voltage drop across the high-side MOSFET is given by:  
V
+ I  
  R  
L(peak) DS(on_Q1)  
CS  
(21)  
When VIN = 4.5 V to 5.5 V, IL_PEAK = 7.2A. Using the IRF7910 MOSFET, we calculate the peak voltage drop to  
be 108 mV. The TPS40042’s internal 3100-ppm temperature coefficient helps compensate for the MOSFET’s  
RDS(on) temperature coefficient. For this design, select the short circuit protection voltage threshold of 180 mV by  
selecting R2 = OPEN.  
REFIN Divider Resistors  
In DDR2 applications, VTT=1/2 VDDQ. A 2:1 resistor divider with R11=R12 =100-kprovides VREFIN. If a buffer  
is to be used to provide VTT_REF, the output of the buffer should be tied to VREFIN on the TPS40042 to minimize  
offset from VTT_REF to VTT.  
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REFIN Bypass Capacitor  
A capacitor from VTT_REF to GND removes VDDQ noise from the REFIN input. The capacitor is selected by  
Equation 22.  
æ
ç
ç
ç
ç
ç
è
ö
÷
÷
÷
÷
÷
ø
æ
ç
è
ö
÷
ø
1
1
æ
ö
æ
ö
+
ç
÷
ç
÷
R11  
R12  
è
ø
è
ø
C11=  
2p´BWREFIN  
(22)  
For a bandwidth of BWREFIN = 30 kHz, C11 calculates to 106 pF, a 100-pF ceramic capacitor is used.  
Feedback Loop Design  
To design feedback circuit, a small signal average modeling technique is employed. Further information on this  
technique may be found in the references.  
Modeling the Power Stage  
The peak-to-peak ramp voltage given in the Electrical Specification table allows the modulator gain to be  
calculated as:  
VIN  
VRAMP(p*p)  
AMOD  
+
(23)  
For this design, a modulator gain of 7.3 (17.3 dB) is calculated.  
The LC filter applies a double pole at the resonance frequency:  
1
F
+
RES  
Ǹ
2   p   L   C  
(24)  
For this design, the resonance frequency is about 11.3 kHz. Below this frequency, the power stage has the dc  
gain of 17.3 dB and above this frequency the power stage gain drops off at -40 dB per decade. The ESR zero is  
approximated by:  
1
FESR  
+
2   p   COUT   RESR  
(25)  
For COUT = 2 x 100 µF and RESR = 2.5 mFESR = 318 kHz. This is greater than 1/5th the switching frequency  
and outside the scope of the error amplifier design. The gain of the power stage would change to -20 dB per  
decade above FESR. The straight line approximation the power stage gain is approximated in Figure 20.  
F
RES  
A
−40dB/dec  
−20dB/dec  
MOD  
0dB  
F
ESR  
Frequency (Log Scale)  
Figure 20. Power Stage Frequency Response Straight Line Approximation  
22  
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Feedback Divider  
Select R8 be between 10 kand 100 k. For this design, select 20 k. While no feedback divider is needed for  
the VTT tracking output ( VOUT = VREFIN) , R8 is necessary to provide input impedance to the error amplifier.  
Error Amplifier Pole-Zero Selection  
Place two zeros at about 80% of the resonance frequency to keep the actual resonance frequency above the two  
zeros over the L and C tolerance. For FRES = 11.3 kHz, FZ1 = 9.0 kHz and FZ2 = 7 kHz. Selecting the cross-over  
frequency (FCO) of the control loop between 3 times the LC filter resonance and 1/5th the switching frequency.  
For most applications 1/10th the switching frequency provides a good balance between ease of design and fast  
transient response.  
If FESR < FCO; FP1 = (1/2) FCO and FP2 = 2x FCO  
If FESR > 2x FCO; FP1 = FCO and FP2 = 4x FCO  
For this design with FSW = 600 kHz, FRES = 11.3 kHz and FESR = 318 kHz.  
FCO = 60 kHz and since FESR > 2x FCO, FP1 = FCO and FP2 = 4x FCO  
.
.
.
Since FCO < FESR the power stage gain at the desired cross-over can be approximated by:  
FCO  
ǒ Ǔ  
PS(fcc) + AMOD * 40   LOG  
A
FRES  
APS(FCO) = -11.7 dB, so the error amplifier gain between the two poles should be 10(11.7/20) = 3.84.  
(26)  
If the error amplifier gain is greater than 0 dB at FSW, the converter can achieve a stable bi-modal operation with  
duty cycles alternating between two stable values, and the output regulated with a output ripple component at  
(1/2) FSW. To prevent this effect, check FP2 by the equation:  
F
SW  
F
+
P2(max)  
A
MID(band)  
(27)  
Since FP2 > FP2(max), it is possible for this control loop to obtain bi-modal operation. To prevent this bi-modal  
operation, reduce FCO and re-calculate APC(FCO), FP1, and FP2(max)  
.
Now, FCO = 40 kHz, AMID-BAND = 1.48, FP1 = 25 kHz and FP2 = 100 kHz.  
The table below summarizes the error amplifier compensation network design criteria.  
Error Amplifier Compensation Network  
PARAMETER  
SYMBOL  
FZ1  
VALUE  
9
UNITS  
First zero frequency  
Second zero frequency  
First pole frequency  
Second pole frequency  
Mid-band gain  
kHz  
FZ2  
9
FP1  
25  
FP2  
100  
1.48  
AMID-BAND  
V/V  
Feedback Components (R3, R6, C3, C4, C5)  
Approximate C5 with the formula:  
1
C5 +  
2   p   R8   FZ2  
(28)  
C5 = 1000 pF (closest standard capacitor value greater than the calculated 884 pF) and approximate R6 with the  
formula:  
1
R6 +  
2   p   C5   FP1  
(29)  
R6 = 6.34 k(closest standard resistor value to calculated 6.37 k) Calculate R3 by the formula:  
Copyright © 2007, Texas Instruments Incorporated  
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( )  
  R6   R8  
A
MID(band)  
R3 +  
R6 ) R8  
(30)  
With AMID_BAND = 1.48, R6 = 6.34 kand R8 = 20 k, R3 = 7.15 k(closest standard resistor value to calculated  
7.12 k) Calculate C3 and C4 by the equations:  
1
C4 +  
2   p   R3   FZ1  
(31)  
1
C3 +  
2   p   R3   F  
P2  
(32)  
For R3 = 7.15 k, C3 = 220 pF (closest standard value to 222 pF) C4 = 2200 pF (closest standard value to 2473  
pF)  
Error Amplifier straight line approximation transfer function looks like Figure 21.  
F
F
P2  
P1  
A
mid−Band  
0dB  
F
F
F
Z2  
SW  
Z1  
Frequency (Log Scale)  
Figure 21. Error Amplifier Frequency Response Straight Line Approximation  
POWER LOSS  
vs  
LOAD CURRENT  
EFFICIENCY  
vs  
LOAD CURRENT  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 4.5 V  
VDD  
V
= 5.0 V  
VDD  
V
= 5.5 V  
VDD  
V
= 5.5 V  
VDD  
V
= 5.0 V  
VDD  
V
(V)  
V
(V)  
VDD  
VDD  
4.5  
4.5  
5.0  
5.5  
5.0  
5.5  
V
= 4.5 V  
VDD  
-10  
-6  
-4  
-2  
0
2
4
6
-6  
-4  
-2  
0
2
4
6
I
- Load Current - A  
I
- Load Current - A  
LOAD  
LOAD  
Figure 22.  
Figure 23.  
24  
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OUTPUT VOLTAGE  
vs  
LOAD CURRENT  
0.925  
0.920  
V
OUT(max)  
V
= 5.0 V  
VDD  
0.915  
0.910  
V
(V)  
VDD  
4.5  
V
= 4.5 V  
5.0  
5.5  
VDD  
0.905  
0.900  
0.895  
V
= 5.5 V  
VDD  
0.890  
0.885  
V
OUT(min)  
0.880  
-6  
-4  
-2  
0
2
4
6
I
- Load Current - A  
LOAD  
Figure 24.  
Copyright © 2007, Texas Instruments Incorporated  
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SLUS777NOVEMBER 2007  
List of Materials  
REF  
C1  
QTY  
2
DESCRIPTION  
MFR  
TDK  
TDK  
TDK  
TDK  
TDK  
TDK  
TDK  
TDK  
TDK  
Pulse  
IR  
PART NUMBER  
C325X5R0J107M  
C1005C01H221M  
C1005X7R1H222M  
C1005X7R1H102M  
C1005X7R0J105M  
C1005X7R0J224M  
C3225X5R0J107M  
C1005X7R0J105M  
C1005C01H101M  
PG0083.801  
IRF7910  
Capacitor, ceramic, 6.3 V, X5R, 20%, 100 µF, 1210  
Capacitor, ceramic, 50 V, X7R, 20%, 220pF, 0402  
Capacitor, ceramic, 50 V, X7R, 20%, 2200 pF, 0402  
Capacitor, ceramic, 50 V, X7R, 20%, 1000 pF, 0402  
Capacitor, ceramic, 6.3 V, X5R, 20%, 1.0 µF, 0402  
Capacitor, ceramic, 6.3 V, X5R, 20%, 0.22 µF, 0402  
Capacitor, ceramic, 6.3 V, X5R, 20%, 100 µF, 1210  
Capacitor, ceramic, 6.3 V, X5R, 20%, 1.0 µF, 0402  
Capacitor, ceramic, 50 V, X7R, 20%, 100pF, 0402  
Inductor, SMT, 0.8 µH, 12 A, 6.6 m, ED1514, 0.268 x 0.268  
MOSFET, dual N-channel, 20 V, 6.6 A, 29 m, 1.0 µH, SO8  
Resistor, chip, 1/16 W, 1%, 7.15 k, 0402  
C3  
1
C4  
1
C5  
1
C6  
1
C7  
1
C8  
2
C10  
C11  
L1  
1
1
1
Q2  
R3  
1
1
Std  
Std  
R6  
1
Resistor, chip, k 1/1 W, 1%, 6.34 k, 0402  
Std  
Std  
R7  
1
Resistor, chip, k, 1/16 W, 1%, 1.0 , 0402  
Std  
Std  
R8  
1
Resistor, chip, k 1/16 W, 1%, 20 k, 0402  
Std  
Std  
R11  
R12  
1
Resistor, chip, 100 k, 1/16 W, 1%, 100 k, 0402  
Resistor, chip, 100 k, 1/16 W, 1%, 100 k, 0402  
Std  
Std  
1
Std  
Std  
Device, Low Voltage DC to DC Synchronous Buck Controller,  
TPS40042DRC, SON-10P  
U1  
1
TPS40042DRC  
TI  
Active High Enable Circuit  
R1  
Q1  
1
1
Resistor, chip, 100 k, 1/16 W, 1%, 100 k, 0402  
Std  
Std  
Mosfet, N-channel, VDS 60 V, RDS 2 , ID 115 mA,  
2N7002W, SOT-323 (SC-70)  
Diodes Inc  
2N7002W-7  
26  
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Definition of Symbols  
SYMBOL  
DESCRIPTION  
VIN(max)  
Maximum operating input voltage  
VIN(min)  
VINRIPPLE  
VOUT  
Minimum operating input voltage  
Peak-to-peak ac ripple voltage on VIN  
Target output voltage  
VOUTRIPPLE  
IOUT(max)  
IRIPPLE  
IL_PEAK  
IL_RMS  
IRMS_CIN  
FSW  
Peak-to-peak ac ripple voltage on VOUT  
Maximum operating load current  
Peak-to-peak ripple current through the output filter inductor  
Peak ripple current through the output filter inductor  
Root mean squared current through the output filter inductor  
Root mean squared current in input capacitor  
Switching frequency  
FCO  
Desired control loop cross-over frequency  
AMOD  
Low frequency gain of the pulse width modulator  
VCONTROL  
FRES  
PWM control voltage (error amplifier output voltage - VCOMP  
L-C filter resonant frequency  
)
FESR  
Output capacitors’ ESR zero frequency  
FP1  
First pole frequency in error amplifier compensation  
Second pole frequency in error amplifier compensation  
First zero frequency in error amplifier compensation  
Second pole frequency in error amplifier compensation  
Total gate charge of upper switch MOSFET  
FP2  
FZ1  
FZ2  
QG1_Q1  
QG2_Q2  
RDS(on_Q1)  
RDS(on_Q2)  
PCON_Q1  
PSW_Q1  
PCON_Q2  
QGD_Q1  
Total gate charge of synchronous rectifier MOSFET  
“ON” drain-to-source resistance of upper switch MOSFET  
“ON” drain-to-source resistance of synchronous rectifier MOSEFT  
Conduction losses in upper switch MOSFET  
Switching losses in upper switch MOSFET  
Conduction losses in synchronous rectifier MOSFET  
Gate-to-drain charge of upper switch MOSFET  
Post threshold gate-to-source charge of the upper switch MOSFET. (Estimate from QG vs. VGS if not provided in  
MOSFET data sheet)  
QGS2_Q1  
VFB  
Internal reference voltage as measured on FB pin.  
Slope of internal PWM ramp  
VRAMP_slope  
APS(Fco)  
AMID-BAND  
BWREFIN  
VCOMP to VOUT gain at desired loop cross-over frequency. (dB)  
VOUT to VCOMP gain at desired loop cross-over frequency (V/V)  
Desired frequency bandwidth of the REFIN input.  
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ADDITIONAL REFERENCES  
Related Parts  
The following parts have characteristics similar to the TPS40042 and may be of interest.  
Related Parts  
DEVICE  
DESCRIPTION  
TPS40007/9  
TPS40021  
TPS40040/1  
Low Voltage Synchronous Buck Controller with Predictive Gate Drive®  
Full Featured Low Voltage Synchronous Buck Controller with Predictive Gate Drive®  
Low Voltage Synchronous Buck Controller  
References  
These references may be found on the web at www.power.ti.com under Technical Documents. Many design  
tools and links to additional references, including design software, may also be found at www.power.ti.com  
1. Under The Hood Of Low Voltage DC/DC Converters, SEM1500 Topic 5, 2002 Seminar Series  
2. Understanding Buck Power Stages in Switchmode Power Supplies, SLVA057, March 1999  
3. Design and Application Guide for High Speed MOSFET Gate Drive Circuits, SEM 1400, 2001 Seminar  
Series  
4. Designing Stable Control Loops, SEM 1400, 2001 Seminar Series  
5. Additional PowerPADTM information may be found in Applications Briefs SLMA002 and SLMA004  
6. QFN/SON PCB Attachment, Texas Instruments Literature Number SLUA271, June 2002  
Package Outline and Recommended PCB Footprint  
The following pages outline the mechanical dimensions of the DRC package and provide recommendations for  
PCB layout footpring.  
28  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
18-Dec-2007  
PACKAGING INFORMATION  
Orderable Device  
TPS40042DRCR  
TPS40042DRCT  
Status (1)  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
SON  
DRC  
10  
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SON  
DRC  
10  
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
15-Dec-2007  
TAPE AND REEL BOX INFORMATION  
Device  
Package Pins  
Site  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) (mm) Quadrant  
(mm)  
330  
(mm)  
12  
TPS40042DRCR  
TPS40042DRCT  
DRC  
DRC  
10  
10  
SITE 41  
SITE 41  
3.3  
3.3  
3.3  
3.3  
1.1  
1.1  
8
8
12  
12  
Q2  
Q2  
180  
12  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
15-Dec-2007  
Device  
Package  
Pins  
Site  
Length (mm) Width (mm) Height (mm)  
TPS40042DRCR  
TPS40042DRCT  
DRC  
DRC  
10  
10  
SITE 41  
SITE 41  
346.0  
190.0  
346.0  
212.7  
29.0  
31.75  
Pack Materials-Page 2  
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Wireless  
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