TPS51218_16 [TI]

HIGH PERFORMANCE, SINGLE SYNCHRONOUS STEP-DOWN CONTROLLER FOR NOTEBOOK POWER SUPPLY;
TPS51218_16
型号: TPS51218_16
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

HIGH PERFORMANCE, SINGLE SYNCHRONOUS STEP-DOWN CONTROLLER FOR NOTEBOOK POWER SUPPLY

文件: 总27页 (文件大小:1973K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
HIGH PERFORMANCE, SINGLE SYNCHRONOUS STEP-DOWN  
CONTROLLER FOR NOTEBOOK POWER SUPPLY  
1
FEATURES  
APPLICATIONS  
Notebook Computers  
I/O Supplies  
System Power Supplies  
2
Wide Input Voltage Range: 3 V to 28 V  
Output Voltage Range: 0.7 V to 2.6 V  
Wide Output Load Range: 0 to 20A+  
Built-in 0.5% 0.7 V Reference  
DESCRIPTION  
D-CAP™ Mode with 100-ns Load Step  
Response  
The TPS51218 is a small-sized single buck controller  
with adaptive on-time D-CAP™ mode. The device is  
suitable for low output voltage, high current, PC  
system power rail and similar point-of-load (POL)  
power supply in digital consumer products. A small  
package with minimal pin-count saves space on the  
PCB, while a dedicated EN pin and pre-set frequency  
selections minimize design effort required for new  
designs. The skip-mode at light load condition, strong  
gate drivers and low-side FET RDS(on) current sensing  
supports low-loss and high efficiency, over a broad  
load range. The conversion input voltage which is the  
high-side FET drain voltage ranges from 3 V to 28 V  
and the output voltage ranges from 0.7 V to 2.6 V.  
The device requires an external 5-V supply. The  
TPS51218 is available in a 10-pin SON package  
specified from –40°C to 85°C.  
Adaptive On Time Control Architecture With 4  
Selectable Frequency Setting  
4700 ppm/°C RDS(on) Current Sensing  
Internal 1-ms Voltage Servo Softstart  
Pre-Charged Start-up Capability  
Built in Output Discharge  
Power Good Output  
Integrated Boost Switch  
Built-in OVP/UVP/OCP  
Thermal Shutdown (Non-latch)  
SON-10 (DSC) Package  
TYPICAL APPLICATION CIRCUIT  
V
IN  
V5IN  
TPS51218  
PGOOD VBST 10  
1
2
3
4
5
TRIP  
EN  
DRVH  
SW  
9
8
7
6
V
OUT  
EN  
VFB  
RF  
V5IN  
DRVL  
GND  
V
_GND  
OUT  
UDG-09064  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
D-CAP is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009, Texas Instruments Incorporated  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION  
ORDERING DEVICE  
NUMBER  
OUTPUT  
SUPPLY  
MINIMUM  
QUANTITY  
TA  
PACKAGE  
PINS  
TPS51218DSCR  
TPS51218DSCT  
10  
10  
Tape and reel  
Mini reel  
3000  
250  
–40°C to 85°C  
Plastic SON PowerPAD  
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
VALUE  
UNIT  
VBST  
VBST(3)  
–0.3 to 37  
–0.3 to 7  
–5 to 30  
–0.3 to 7  
–5 to 37  
–0.3 to 7  
–0.5 to 7  
–0.3 to 7  
150  
Input voltage range(2)  
SW  
V
V5IN, EN, TRIP, VFB, RF  
DRVH  
DRVH(3)  
Output voltage range(2)  
DRVL  
V
PGOOD  
TJ  
Junction temperature range  
Storage temperature range  
°C  
°C  
TSTG  
–55 to 150  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.  
(3) Voltage values are with respect to the SW terminal.  
DISSIPATION RATINGS  
2-oz. trace and copper pad with solder.  
PACKAGE  
TA < 25°C  
POWER RATING  
DERATING FACTOR  
ABOVE TA = 25°C  
TA = 85°C  
POWER RATING  
10-pin DSC(1)  
1.54 W  
15 mW/°C  
0.62 W  
(1) Enhanced thermal conductance by thermal vias is used beneath thermal pad as shown in Land Pattern information.  
2
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.5  
TYP  
MAX  
6.5  
34.5  
28  
UNIT  
Supply voltage  
V5IN  
V
VBST  
–0.1  
–1  
SW  
Input voltage range  
SW(1)  
–4  
28  
V
VBST(2)  
–0.1  
–0.1  
–1  
6.5  
6.5  
34.5  
34.5  
6.5  
6.5  
6.5  
85  
EN, TRIP, VFB, RF  
DRVH  
DRVH(1)  
DRVH(2)  
–4  
Output voltage range  
–0.1  
–0.3  
–0.1  
–40  
V
DRVL  
PGOOD  
TA  
Operating free-air temperature  
°C  
(1) This voltage should be applied for less than 30% of the repetitive period.  
(2) Voltage values are with respect to the SW terminal.  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): TPS51218  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
ELECTRICAL CHARACTERISTICS  
over recommended free-air temperature range, V5IN=5V. (Unless otherwise noted)  
PARAMETER  
SUPPLY CURRENT  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
V5IN current, TA = 25°C, No Load,  
VEN = 5 V, VVFB = 0.735 V  
IV5IN  
V5IN supply current  
320  
500  
1
µA  
µA  
IV5INSDN  
V5IN shutdown current  
V5IN current, TA = 25°C, No Load, VEN = 0 V  
INTERNAL REFERENCE VOLTAGE  
VFB voltage, CCM condition(1)  
TA = 25°C, skip mode  
0.7000  
V
V
0.7005 0.7040 0.7075  
0.6984 0.7040 0.7096  
0.6970 0.7040 0.7110  
VVFB  
VFB regulation voltage  
VFB input current  
TA = 0°C to 85°C, skip mode  
TA = –40°C to 85°C, skip mode  
VVFB = 0.735 V, TA = 25°C, skip mode  
IVFB  
0.01  
0.2  
µA  
OUTPUT DISCHARGE  
Output discharge current from  
SW pin  
OUTPUT DRIVERS  
IDischg  
VEN = 0 V, VSW = 0.5 V  
5
13  
mA  
Source, IDRVH = –50 mA  
Sink, IDRVH = 50 mA  
Source, IDRVL = –50 mA  
Sink, IDRVL = 50 mA  
1.5  
0.7  
1.0  
0.5  
17  
3
1.8  
2.2  
1.2  
30  
RDRVH  
RDRVL  
tD  
DRVH resistance  
DRVL resistance  
Dead time  
DRVH-off to DRVL-on  
DRVL-off to DRVH-on  
7
ns  
10  
22  
35  
BOOT STRAP SWITCH  
VFBST  
Forward voltage  
VBST leakage current  
VV5IN-VBST, IF = 10 mA, TA = 25°C  
0.1  
0.2  
1.5  
V
IVBSTLK  
VVBST = 34.5 V, VSW = 28 V, TA = 25°C  
0.01  
µA  
DUTY AND FREQUENCY CONTROL  
tOFF(min)  
Minimum off-time  
TA = 25°C  
150  
260  
79  
400  
ns  
VIN = 28 V, VOUT = 0.7 V, RRF = 39k,  
tON(min)  
Minimum on-time  
TA = 25°C(1)  
SOFTSTART  
tss  
Internal SS time  
From VEN = high to VOUT = 95%  
1
ms  
POWERGOOD  
PG in from lower  
PG in from higher  
PG hysteresis  
92.5%  
107.5%  
2.5%  
3
95%  
97.5%  
VTHPG  
PG threshold  
110% 112.5%  
5%  
6
7.5%  
IPGMAX  
tPGDEL  
PG sink current  
PG delay  
VPGOOD = 0.5 V  
Delay for PG in  
mA  
ms  
0.8  
1
1.2  
LOGIC THRESHOLD AND SETTING CONDITIONS  
Enable  
1.8  
VEN  
IEN  
EN voltage threshold  
EN input current  
V
Disable  
0.5  
1.0  
VEN = 5V  
µA  
RRF = 470 k, TA = 25°C(2)  
RRF = 200 k, TA = 25°C(2)  
RRF = 100 k, TA = 25°C(2)  
RRF = 39 k, TA = 25°C(2)  
CCM  
266  
312  
349  
395  
1.8  
290  
340  
380  
430  
314  
368  
411  
465  
fSW  
Switching frequency  
kHz  
V
VRF  
CCM setting voltage  
Auto-skip  
0.5  
(1) Ensured by design. Not production tested.  
(2) Not production tested. Test condition is VIN= 8 V, VOUT= 1.1 V, IOUT = 10 A using application circuit shown in Figure 21.  
4
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
ELECTRICAL CHARACTERISTICS (continued)  
over recommended free-air temperature range, V5IN=5V. (Unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
PROTECTION: CURRENT SENSE  
ITRIP  
TRIP source current  
VTRIP = 1V, TA = 25°C  
9
10  
11  
µA  
TRIP current temperature  
coeffficient  
TCITRIP  
On the basis of 25°C  
VTRIP-GND Voltage  
4700  
ppm/°C  
Current limit threshold setting  
range  
VTRIP  
0.2  
3
V
VTRIP = 3.0 V  
VTRIP = 1.6 V  
VTRIP = 0.2 V  
VTRIP = 3.0 V  
355  
185  
17  
375  
200  
25  
395  
215  
VOCL  
Current limit threshold  
mV  
33  
–395  
–215  
–33  
3
–375  
–200  
–25  
15  
–355  
–185  
–17  
VOCLN  
Negative current limit threshold VTRIP = 1.6 V  
VTRIP = 0.2 V  
mV  
mV  
Positive  
Auto zero cross adjustable  
range  
VAZCADJ  
Negative  
–15  
–3  
PROTECTION: UVP AND OVP  
VOVP  
OVP trip threshold  
OVP detect  
115%  
120%  
1
125%  
tOVPDEL  
VUVP  
OVP propagation delay time  
Output UVP trip threshold  
50-mV overdrive  
UVP detect  
µs  
65%  
0.8  
70%  
75%  
1.2  
Output UVP propagation delay  
time  
tUVPDEL  
1
ms  
ms  
tUVPEN  
Output UVP enable delay time  
From Enable to UVP workable  
1.0  
1.2  
1.4  
UVLO  
Wake up  
4.20  
3.7  
4.38  
3.93  
4.50  
4.1  
VUVV5IN  
V5IN UVLO threshold  
V
Shutdown  
THERMAL SHUTDOWN  
(3)  
Shutdown temperature  
Hysteresis(3)  
145  
10  
TSDN  
Thermal shutdown threshold  
°C  
(3) Ensured by design. Not production tested.  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): TPS51218  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
DEVICE INFORMATION  
DSC PACKAGE  
(TOP VIEW)  
PGOOD  
TRIP  
EN  
1
2
3
4
5
10 VBST  
9
8
7
6
DRVH  
SW  
TPS51218DSC  
VFB  
RF  
V5IN  
DRVL  
GND  
Thermal pad is used as an active terminal of GND.  
PIN FUNCTIONS  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
High-side MOSFET driver output. The SW node referenced floating driver. The gate drive voltage is  
defined by the voltage across VBST to SW node bootstrap flying capacitor  
DRVH  
9
O
Synchronous MOSFET driver output. The GND referenced driver. The gate drive voltage is defined by  
V5IN voltage.  
DRVL  
EN  
6
3
O
I
SMPS enable pin. Short to GND to disable the device.  
Thermal  
Pad  
GND  
I
Ground  
Power Good window comparator open drain output. Pull up with resistor to 5 V or appropriate signal  
voltage. Continuous current capability is 1 mA. PGOOD goes high 1 ms after VFB becomes within  
specified limits. Power bad, or the terminal goes low, after a 2- µs delay.  
PGOOD  
RF  
1
5
O
I
Switching frequency selection. Connect a resistance to select switching frequency as shown in Table 1.  
The switching frequency is detected and stored into internal registers during startup. This pin also controls  
Auto-skip or forced CCM selection.  
Pull down to GND with resistor : Auto-Skip  
Connect to PGOOD with resistor: forced CCM after PGOOD becomes high.  
Switch node. A high-side MOSFET gate drive return. Also used for on time generation and output  
discharge.  
SW  
8
2
I
I
OCL detection threshold setting pin. 10 µA at room temperature, 4700 ppm/°C current is sourced and set  
the OCL trip voltage as follows.  
TRIP  
V
TRIP  
V
=
(0.2 V VTRIP 3 V)  
OCL  
8
V5IN  
VBST  
VFB  
7
10  
4
I
I
I
5 V +30%/–10% power supply input.  
Supply input for high-side MOSFET driver (bootstrap terminal). Connect a flying capacitor from this pin to  
the SW pin. Internally connected to V5IN via bootstrap MOSFET switch.  
SMPS feedback input. Connect the feedback resistor divider.  
6
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
FUNCTIONAL BLOCK DIAGRAM  
UV  
OV  
PGOOD  
0.7 V –30%  
0.7 V +20%  
0.7 V +10/15%  
+
+
+
+
Delay  
0.7 V –5/10%  
Control Logic  
Enable/SS Control  
VBST  
EN  
PWM  
DRVH  
SW  
VFB  
+
+
+
Ramp Comp  
XCON  
0.7 V  
10 mA  
+
t
ON  
OCP  
One-  
Shot  
TRIP  
x(-1/8)  
FCCM  
x(1/8)  
+
ZC  
V5IN  
Auto-skip  
DRVL  
Auto-skip/FCCM  
GND  
Frequency  
Setting  
Detector  
RF  
TPS51218  
UDG-09065  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Link(s): TPS51218  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
TYPICAL CHARACTERISTICS  
V5IN SUPPLY CURRENT  
vs  
JUNCTION TEMPERATURE  
V5IN SHUTDOWN CURRENT  
vs  
JUNCTION TEMPERATURE  
1000  
20  
18  
V
V
V
= 5 V  
V
V
= 5 V  
V5IN  
V5IN  
= 5 V  
= 0 V  
EN  
EN  
No Load  
= 0.735 V  
800  
600  
16  
14  
12  
10  
VFB  
No Load  
400  
200  
8
6
4
2
0
0
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
TJ – Junction Temperature – °C  
TJ – Junction Temperature – °C  
Figure 1.  
Figure 2.  
OVP/UVP THRESHOLD  
vs  
JUNCTION TEMPERATURE  
CURRENT SENSE CURRENT (ITRIP  
vs  
)
JUNCTION TEMPERATURE  
150  
20  
18  
V
V
= 5 V  
= 1 V  
V
= 5 V  
V5IN  
TRIP  
V5IN  
OVP  
16  
14  
12  
10  
100  
50  
0
8
6
4
2
0
UVP  
–50  
0
50  
100  
150  
–50  
0
50  
100  
150  
TJ – Junction Temperature – °C  
TJ – Junction Temperature – °C  
Figure 3.  
Figure 4.  
8
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
TYPICAL CHARACTERISTICS (continued)  
SWITCHING FREQUENCY  
vs  
SWITCHING FREQUENCY  
vs  
INPUT VOLTAGE  
OUTPUT CURRENT  
500  
1000  
100  
10  
I
= 10 A  
O
Auto-Skip  
450  
400  
350  
FCCM  
R
R
= 39 kW  
RF  
= 100 kW  
= 200 kW  
= 470 kW  
RF  
R
RF  
Auto-Skip  
R
300  
250  
RF  
1
V
= 12 V  
IN  
R
= 470 kW  
RF  
200  
0.1  
6
8
10  
12  
14  
16  
18  
20  
22  
0.001  
0.01  
0.1  
1
10  
100  
VIN – Input Voltage – V  
IOUT – Output Current – A  
Figure 5.  
Figure 6.  
SWITCHING FREQUENCY  
vs  
SWITCHING FREQUENCY  
vs  
OUTPUT CURRENT  
OUTPUT CURRENT  
1000  
100  
10  
1000  
100  
10  
FCCM  
FCCM  
Auto-Skip  
Auto-Skip  
1
1
V
= 12 V  
V
= 12 V  
IN  
IN  
R
= 200 kW  
R
= 100 kW  
RF  
RF  
0.1  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
IOUT – Output Current – A  
IOUT – Output Current – A  
Figure 7.  
Figure 8.  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
9
Product Folder Link(s): TPS51218  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
TYPICAL CHARACTERISTICS (continued)  
SWITCHING FREQUENCY  
vs  
OUTPUT VOLTAGE  
vs  
OUTPUT CURRENT  
OUTPUT CURRENT  
1000  
100  
10  
1.12  
1.11  
1.10  
1.09  
1.08  
MODE  
Auto-Skip  
FCCM  
FCCM  
Auto-Skip  
1
V
= 12 V  
V
= 12 V  
IN  
IN  
R
= 39 kW  
R
= 470 kW  
RF  
RF  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
IOUT – Output Current – A  
IOUT – Output Current – A  
Figure 9.  
Figure 10.  
OUTPUT VOLTAGE  
vs  
INPUT VOLTAGE  
1.1-V EFFICIENCY  
vs  
OUTPUT CURRENT  
100  
1.12  
1.11  
1.10  
1.09  
1.08  
R
V
= 470 kW  
RF  
Auto-Skip  
90  
80  
= 1.1 V  
OUT  
R
= 470 kW  
RF  
I
= 20 A  
OUT  
70  
60  
50  
40  
30  
20  
10  
0
Auto-Skip  
I
= 0 A  
OUT  
V
(V)  
IN  
8
12  
20  
FCCM  
0.001  
0.01  
0.1  
1
10  
100  
6
8
10  
12  
14  
16  
18  
20  
22  
IOUT – Output Current – A  
VIN – Input Voltage – V  
Figure 11.  
Figure 12.  
10  
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
TYPICAL CHARACTERISTICS (continued)  
Figure 13. 1.1-V Start-Up Waveform  
Figure 14. Pre-Biased Start-Up Waveform  
X
X
X
X
X
X
Figure 15. 1.1-V Soft-Stop Waveform  
Figure 16. 1.1-V Load Transient Response  
X
X
X
X
X
X
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
11  
Product Folder Link(s): TPS51218  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
APPLICATION INFORMATION  
GENERAL DESCRIPTION  
The TPS51218 is a high-efficiency, single channel, synchronous buck regulator controller suitable for low output  
voltage point-of-load applications in notebook computers and similar digital consumer applications. The device  
features proprietary D-CAP™ mode control combined with adaptive on-time architecture. This combination is  
ideal for building modern low duty ratio, ultra-fast load step response DC-DC converters. The output voltage  
ranges from 0.7 V to 2.6 V. The conversion input voltage range is from 3 V to 28 V. The D-CAP™ mode uses the  
ESR of the output capacitor(s) to sense current information. An advantage of this control scheme is that it does  
not require an external phase compensation network, helping the designer with ease-of-use and realizing low  
external component count configuration. The switching frequency is selectable from four preset values using a  
resistor connected from the RF pin to ground. Adaptive on-time control tracks the preset switching frequency  
over a wide range of input and output voltages, while it increases the switching frequency at step-up of load.  
The RF pin also serves in selecting between auto-skip mode and forced continuous conduction mode for light  
load conditions. The strong gate drivers of the TPS51218 allow low RDS(on) FETs for high current applications.  
ENABLE AND SOFT START  
When the EN pin voltage rises above the enable threshold, (typically 1.2 V) the controller enters its start-up  
sequence. The first 250 µs calibrates the switching frequency setting resistance attached at RF to GND and  
stores the switching frequency code in internal registers. A voltage of 0.1 V is applied to RF for measurement.  
Switching is inhibited during this phase. In the second phase, internal DAC starts ramping up the reference  
voltage from 0 V to 0.7 V. This ramping time is 750 µs. Smooth and constant ramp up of the output voltage is  
maintained during start up regardless of load current. Connect a 1-kresistor in series with the EN pin to provide  
protection.  
ADAPTIVE ON-TIME D-CAP™ CONTROL  
TPS51218 does not have a dedicated oscillator that determines switching frequency. However, the device runs  
with pseudo-constant frequency by feed-forwarding the input and output voltages into its on-time one-shot timer.  
The adaptive on-time control adjusts the on-time to be inversely proportional to the input voltage and proportional  
to the output voltage (tON  
VOUT / VIN ). This makes the switching frequency fairly constant in steady state  
conditions over wide input voltage range. The switching frequency is selectable from four preset values by a  
resistor connected to RF as shown in Table 1. (Leaving the resistance open sets the switching frequency to the  
lowest value, 290 kHz. However, it is recommended to apply one of the resistances on the table in any  
application designs.)  
Table 1. Resistor and Switching Frequency  
SWITCHING  
FREQUENCY (fSW  
(kHz)  
RESISTANCE (RRF  
)
)
(k)  
470  
200  
100  
39  
290  
340  
380  
430  
The off-time is modulated by a PWM comparator. The VFB node voltage (the mid point of resistor divider) is  
compared to the internal 0.7-V reference voltage added with a ramp signal. When both signals match, the PWM  
comparator asserts the set signal to terminate the off-time (turn off the low-side MOSFET and turn on high-side  
MOSFET). The set signal becomes valid if the inductor current level is below OCP threshold, otherwise the  
off-time is extended until the current level to become below the threshold.  
12  
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
 
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
SMALL SIGNAL MODEL  
From small-signal loop analysis, a buck converter using D-CAP™ mode can be simplified as shown in Figure 17.  
Switching Modulator  
V
IN  
DRVH  
DRVL  
R1  
R2  
L
V
V
OUT  
PWM  
Control  
Logic  
and  
FB  
+
I
I
Driver  
IND  
OUT  
I
+
C
0.7 V  
ESR  
R
L
Voltage Divider  
V
C
C
O
Output  
Capacitor  
UDG-09063  
Figure 17. Simplified Modulator Model  
The output voltage is compared with internal reference voltage (ramp signal is ignored here for simplicity). The  
PWM comparator determines the timing to turn on the high-side MOSFET. The gain and speed of the  
comparator can be assumed high enough to keep the voltage at the beginning of each on cycle substantially  
constant.  
1
H(s) =  
s´ESR ´ C  
O
(1)  
For loop stability, the 0-dB frequency, ƒ0, defined in Equation 2 need to be lower than 1/4 of the switching  
frequency.  
f
1
SW  
f =  
£
0
2p´ESR ´C  
4
O
(2)  
According to Equation 2, the loop stability of D-CAP™ mode modulator is mainly determined by the capacitor's  
chemistry. For example, specialty polymer capacitors (SP-CAP) have CO on the order of several 100 µF and  
ESR in range of 10 m. These makes f0 on the order of 100 kHz or less and the loop is stable. However,  
ceramic capacitors have an ƒ0 of more than 700 kHz, which is not suitable for this modulator.  
RAMP SIGNAL  
The TPS51218 adds a ramp signal to the 0.7-V reference in order to improve its jitter performance. As described  
in the previous section, the feedback voltage is compared with the reference information to keep the output  
voltage in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new  
switching cycle is improved. Therefore the operation becomes less jittery and more stable. The ramp signal is  
controlled to start with –7 mV at the beginning of ON-cycle and becomes 0 mV at the end of OFF-cycle in  
continuous conduction steady state.  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
13  
Product Folder Link(s): TPS51218  
 
 
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
LIGHT LOAD CONDITION IN AUTO-SKIP OPERATION  
With RF pin pulled down to low via RRF, the TPS51218 automatically reduces switching frequency at light load  
conditions to maintain high efficiency. As the output current decreases from heavy load condition, the inductor  
current is also reduced and eventually comes to the point that its rippled valley touches zero level, which is the  
boundary between continuous conduction and discontinuous conduction modes. The rectifying MOSFET is  
turned off when this zero inductor current is detected. As the load current further decreases, the converter runs in  
to discontinuous conduction mode. The on-time is kept almost the same as it was in the continuous conduction  
mode so that it takes longer time to discharge the output capacitor with smaller load current to the level of the  
reference voltage. The transition point to the light load operation IO(LL) (i.e., the threshold between continuous and  
discontinuous conduction mode) can be calculated in Equation 3.  
(V - V  
´
)´ V  
OUT  
1
IN  
OUT  
I
=
O(LL)  
2´L ´ f  
V
SW  
IN  
(3)  
where  
fSW is the PWM switching frequency  
Switching frequency versus output current in the light load condition is a function of L, VIN and VOUT, but it  
decreases almost proportional to the output current from the IO(LL) given in Equation 3. For example, it is 58 kHz  
at IO(LL)/5 if the frequency setting is 290 kHz.  
ADAPTIVE ZERO CROSSING  
The TPS51218 has an adaptive zero crossing circuit which performs optimization of the zero inductor current  
detection at skip mode operation. This function pursues ideal low-side MOSFET turning off timing and  
compensates inherent offset voltage of the ZC comparator and delay time of the ZC detection circuit. It prevents  
SW-node swing-up caused by too late detection and minimizes diode conduction period caused by too early  
detection. As a result, better light load efficiency is delivered.  
FORCED CONTINUOUS CONDUCTION MODE  
When the RF pin is tied high, the controller keeps continuous conduction mode (CCM) in light load condition. In  
this mode, switching frequency is kept almost constant over the entire load range which is suitable for  
applications need tight control of the switching frequency at a cost of lower efficiency. To set the switching  
frequency to be the same as Auto-skip mode, it is recommended to connect RRF to PGOOD. In this way, RF is  
tied low prior to soft-start operation to set frequency and tied high after powergood indicates high.  
OUTPUT DISCHARGE CONTROL  
When EN is low, the TPS51218 discharges the output capacitor using internal MOSFET connected between SW  
and GND while high-side and low-side MOSFETs are kept off. The current capability of this MOSFET is limited to  
discharge slowly.  
LOW-SIDE DRIVER  
The low-side driver is designed to drive high current low RDS(on) N-channel MOSFET(s). The drive capability is  
represented by its internal resistance, which are 1.0for V5IN to DRVL and 0.5for DRVL to GND. A dead time  
to prevent shoot through is internally generated between high-side MOSFET off to low-side MOSFET on, and  
low-side MOSFET off to high-side MOSFET on. 5-V bias voltage is delivered from V5IN supply. The  
instantaneous drive current is supplied by an input capacitor connected between V5IN and GND. The average  
drive current is equal to the gate charge at Vgs=5V times switching frequency. This gate drive current as well as  
the high-side gate drive current times 5V makes the driving power which need to be dissipated from TPS51218  
package.  
HIGH-SIDE DRIVER  
The high-side driver is designed to drive high current, low RDS(on) N-channel MOSFET(s). When configured as a  
floating driver, 5 V of bias voltage is delivered from V5IN supply. The average drive current is also equal to the  
gate charge at VGS=5V times switching frequency. The instantaneous drive current is supplied by the flying  
capacitor between VBST and SW pins. The drive capability is represented by its internal resistance, which are  
1.5 for VBST to DRVH and 0.7 for DRVH to SW.  
14  
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
 
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
POWER-GOOD  
The TPS51218 has powergood output that indicates high when switcher output is within the target. The  
powergood function is activated after soft-start has finished. If the output voltage becomes within +10%/–5% of  
the target value, internal comparators detect power-good state and the power-good signal becomes high after a  
1-ms internal delay. If the output voltage goes outside of +15%/–10% of the target value, the powergood signal  
becomes low after a 2-µs internal delay. The powergood output is an open-drain output and must be pulled up  
externally.  
CURRENT SENSE AND OVER CURRENT PROTECTION  
TPS51218 has cycle-by-cycle overcurrent limiting control. The inductor current is monitored during the OFF state  
and the controller keeps the OFF state during the inductor current is larger than the overcurrent trip level. To  
provide both good accuracy and cost effective solution, the TPS51218 supports temperature compensated  
MOSFET RDS(on) sensing. The TRIP pin should be connected to GND through the trip voltage setting resistor,  
RTRIP. The TRIP terminal sources ITRIP current, which is 10µA typically at room temperature, and the trip level is  
set to the OCL trip voltage VTRIP as shown in Equation 4. Note that VTRIP is limited up to approximately 3 V  
internally.  
V
(mV) = R  
(kW)´I  
(mA)  
TRIP  
TRIP  
TRIP  
(4)  
The inductor current is monitored by the voltage between GND pad and SW pin so that the SW pin should be  
connected to the drain terminal of the low-side MOSFET properly. ITRIP has 4700ppm/°C temperature slope to  
compensate the temperature dependency of the RDS(on). GND is used as the positive current sensing node so  
that GND should be connected to the proper current sensing device, i.e. the source terminal of the low-side  
MOSFET.  
As the comparison is done during the OFF state, VTRIP sets valley level of the inductor current. Thus, the load  
current at overcurrent threshold, IOCP, can be calculated in Equation 5  
I
æ
ö
IND ripple  
(
(V - V  
)´ V  
OUT OUT  
V
V
TRIP  
)
1
TRIP  
IN  
I
= ç  
ç
è
÷ +  
÷
ø
=
+
´
OCP  
8´R  
2
8´R  
2´L ´ f  
V
DS(on)  
DS(on)  
SW  
IN  
(5)  
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output  
voltage tends to fall down. Eventually, it crosses the undervoltage protection threshold and shuts down the  
controller.  
When the device is operating in the forced continuous conduction mode, the negative current limit (NCL) protects  
the external FET from carrying too much current. The NCL detect threshold is set as the same absolute value as  
positive OCL but negative polarity. Please be noted the threshold still represents the valley value of the inductor  
current.  
OVER/UNDER VOLTAGE PROTECTION  
TPS51218 monitors a resistor divided feedback voltage to detect over and undervoltage. When the feedback  
voltage becomes higher than 120% of the target voltage, the OVP comparator output goes high and the circuit  
latches as the high-side MOSFET driver OFF and the low-side MOSFET driver ON.  
When the feedback voltage becomes lower than 70% of the target voltage, the UVP comparator output goes  
high and an internal UVP delay counter begins counting. After a 1-ms delay, TPS51218 latches OFF both  
high-side and low-side MOSFETs drivers. This function is enabled after 1.2 ms following EN has become high.  
UVLO PROTECTION  
TPS51218 has V5IN undervoltage lockout protection (UVLO). When the V5IN voltage is lower than UVLO  
threshold voltage, the switch mode power supply shuts off. This is non-latch protection.  
THERMAL SHUTDOWN  
TPS51218 monitors the die temperature. If the temperature exceeds the threshold value (typically 145C), the  
TPS51218 is shut off. This is non-latch protection.  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
15  
Product Folder Link(s): TPS51218  
 
 
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
EXTERNAL COMPONENTS SELECTION  
Selecting external components is simple in D-CAP™ mode.  
1. Choose the inductor.  
The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum  
output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable  
operation.  
V
(
- V  
´ V  
)
V
(
IN max  
(
- V  
)
´ V  
)
OUT  
OUT  
IN max  
OUT  
OUT  
V
IN max  
(
IN max  
(
)
1
3
L =  
´
=
´
I
´ f  
V
I
´ f  
IND(ripple) SW  
SW  
OUT max  
(
(
)
)
)
(6)  
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak  
inductor current before saturation. The peak inductor current can be estimated in Equation 7.  
V
(
- VOUT ´ VOUT  
)
IN max  
(
)
VTRIP  
8 ´ RDS(on) L ´ fSW  
1
I
=
+
´
IND(peak)  
V
IN max  
(
)
(7)  
2. Choose the output capacitor(s).  
Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. For loop stability,  
capacitance and ESR should satisfy Equation 2. For jitter performance, Equation 8 is a good starting point to  
determine ESR.  
VOUT ´10 mV ´ 1-D  
10 mV ´L ´ f  
é ù  
é
ù
(
)
L ´ fSW  
SW  
ë
û
ë
û
ESR =  
=
=
W
é ù  
ë û  
0.7 V ´I  
é ù  
0.7 V  
70  
é ù  
ë û  
IND(ripple)  
ë û  
(8)  
where  
D is the duty ratio  
the output ripple down slope rate is 10 mV/tSW in terms of VFB terminal voltage as shown in Figure 18  
tSW is the switching period  
t
x (1-D)  
SW  
10  
V
RIPPLE(FB)  
0
t
SW  
t – Time  
Figure 18. Ripple Voltage Down Slope  
16  
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
 
 
 
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
3. Determine the value of R1 and R2.  
The output voltage is programmed by the voltage-divider resistor, R1 and R2, shown in Figure 17. R1 is  
connected between the VFB pin and the output, and R2 is connected between the VFB pin and GND. Typical  
designs begin with the selection of an R2 value between 10 kand 20 k. Determine R1 using Equation 9.  
I
´ESR  
æ
ö
IND(ripple)  
V
-
- 0.7  
ç
ç
÷
÷
OUT  
2
è
ø
R1=  
´R2  
0.7  
(9)  
LAYOUT CONSIDERATIONS  
VIN  
TRIP  
2
TPS51218  
V5IN  
RF  
5
V
OUT  
6
5
# 1  
1 mF  
# 2  
VFB  
4
DRVL  
Thermal Pad  
GND  
# 3  
UDG-09066  
Figure 19. Ground System of DC/DC Converter Using the TPS51218  
Certain points must be considered before starting a layout work using the TPS51218.  
Inductor, VIN capacitor(s), VOUT capacitor(s) and MOSFETs are the power components and should be placed  
on one side of the PCB (solder side). Other small signal components should be placed on another side  
(component side). At least one inner plane should be inserted, connected to ground, in order to shield and  
isolate the small signal traces from noisy power lines.  
All sensitive analog traces and components such as VFB, PGOOD, TRIP and RF should be placed away  
from high-voltage switching nodes such as SW, DRVL, DRVH or VBST toavoid coupling. Use internal  
layer(s) as ground plane(s) and shield feedback trace from power traces andcomponents.  
The DC/DC converter has several high-current loops. The area of these loops should be minimized in order to  
suppress generating switching noise.  
The most important loop to minimize the area of is the path from the VIN capacitor(s) through the high and  
low-side MOSFETs, and back to the capacitor(s) through ground. Connect the negative node of the VIN  
capacitor(s) and the source of the low-side MOSFET at ground as close as possible. (Refer to loop #1 of  
Figure 19)  
The second important loop is the path from the low-side MOSFET through inductor and VOUT capacitor(s),  
and back to source of the low-side MOSFET through ground. Connect source of the low-side MOSFET  
and negative node of VOUT capacitor(s) at ground as close as possible. (Refer to loop #2 of Figure 19)  
The third important loop is of gate driving system for the low-side MOSFET. To turn on the low-side  
MOSFET, high current flows from V5IN capacitor through gate driver and the low-side MOSFET, and back  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
17  
Product Folder Link(s): TPS51218  
 
 
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
to negative node of the capacitor through ground. To turn off the low-side MOSFET, high current flows  
from gate of the low-side MOSFET through the gate driver and GND pad of the device, and back to  
source of the low-side MOSFET through ground. Connect negative node of V5IN capacitor, source of the  
low-side MOSFET and GND pad of the device at ground as close as possible. (Refer to loop #3 of  
Figure 19)  
Since the TPS51218 controls output voltage referring to voltage across VOUT capacitor, the top-side resistor of  
the voltage divider should be connected to the positive node of VOUT capacitor. In a same manner both  
bottom side resistor and GND pad of the device should be connected to the negative node of VOUT capacitor.  
The tracefrom these resistors to the VFB pin should be short and thin. Place on the component side and  
avoid via(s) between these resistors and the device.  
Connect the overcurrent setting resistors from TRIP pin to ground and make the connections as close as  
possible to the device. The trace from TRIP pin to resistor and from resistor to ground should avoid coupling  
to a high-voltage switching node.  
Connect the frequency setting resistor from RF pin to ground, or to the PGOOD pin, and make the  
connections as close as possible to the device. The trace from the RF pin to the resistor and from the resistor  
to ground should avoid coupling to a high-voltage switching node.  
Connections from gate drivers to the respective gate of the high-side or the low-side MOSFET should be as  
short as possible to reduce stray inductance. Use 0.65 mm (25 mils) or wider traceand via(s) of at least  
0.5 mm (20 mils) diameter along this trace.  
The PCB trace defined as switch node, which connects to source of high-side MOSFET, drain of low-side  
MOSFET and high-voltage side of the inductor, should be as short and wide as possible.  
LAYOUT CONSIDERATIONS TO REMOTE SENSING  
VIN  
TRIP  
TPS51218  
2
V5IN  
RF  
6
5
V
OUT  
1 mF  
VFB  
DRVL  
0.1 mF  
100 W  
4
5
VTT_SENSE  
VSS_SENSE  
Thermal Pad  
GND  
UDG-09067  
Figure 20. Remote Sensing of Output Voltage Using the TPS51218  
Make a Kelvin connection to the load device.  
Run the feedback signals as a differential pair to the device. The distance of these parallel pair should be as  
short as possible.  
Run the lines in a quiet layer. Isolate them from noisy signals by a voltage or ground plane.  
18  
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
TPS51218 APPLICATION CIRCUITS  
V5IN  
4.5 V  
to  
V
IN  
8 V  
to  
20 V  
6.5 V  
C3  
10 mF x 4  
U1  
TPS51218  
R6  
100 kW  
C1  
0.1 mF  
R1  
5.6 kW  
1
2
3
4
5
PGOOD  
VBST 10  
Q1  
FDMS8680  
R7  
L1  
0.45 mH  
TRIP  
EN  
DRVH  
SW  
9
8
7
6
R3  
1 kW  
V
3.3 W  
OUT  
1.1 V  
18 A  
EN  
VFB  
RF  
V5IN  
DRVL  
Q2  
FDMS8670AS  
Q3  
FDMS8670AS  
C4  
330 mF x 4  
GND  
C2  
1 mF  
R2  
10 kW  
R5  
30 kW  
V
_GND  
(A)  
OUT  
R4  
470 kW  
UDG-09068  
Figure 21. 1.1-V/18-A Auto-Skip Mode  
V5IN  
4.5 V  
to  
V
IN  
8 V  
to  
20 V  
6.5 V  
C3  
10 mF x 4  
R1  
5.6 kW  
R6  
100 kW  
U1  
TPS51218  
C1  
0.1 mF  
1
2
3
4
5
PGOOD  
TRIP  
EN  
VBST 10  
Q1  
FDMS8680  
R7  
(A)  
L1  
0.45 mH  
R4  
470 kW  
DRVH  
SW  
9
8
7
6
R3  
1 kW  
V
3.3 W  
OUT  
1.1 V  
18 A  
EN  
VFB  
RF  
V5IN  
DRVL  
Q2  
FDMS8670AS  
Q3  
FDMS8670AS  
C4  
330 mF x 4  
GND  
C2  
1 mF  
R2  
10 kW  
R5  
30 kW  
V
_GND  
OUT  
UDG-09069  
A. See Table 1 for resistor/frequency values.  
Figure 22. 1.1-V/18-A Forced Continuous Conduction Mode  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
19  
Product Folder Link(s): TPS51218  
TPS51218  
SLUS935AMAY 2009REVISED JUNE 2009 ............................................................................................................................................................... www.ti.com  
Table 2. 1.1-V, 18-A, 290-kHz Application List of Materials  
REFERENCE  
DESIGNATOR  
QTY  
SPECIFICATION  
MANUFACTURER  
PART NUMBER  
C3  
1
1
1
1
2
4 × 10 µF, 25 V  
Taiyo Yuden  
Panasonic  
Panasonic  
Fairchild  
TMK325BJ106MM  
EEFCX0D331XR  
ETQP4LR45XFC  
FDMS8680  
C4  
4 × 330 µF, 2 V, 12 mΩ  
0.45 µH, 25 A, 1.1 mΩ  
30 V, 35 A, 8.5 mΩ  
30 V, 42 A, 3.5 mΩ  
L1  
Q1  
Q2, Q3  
Fairchild  
FDMS8670AS  
20  
Submit Documentation Feedback  
Copyright © 2009, Texas Instruments Incorporated  
Product Folder Link(s): TPS51218  
TPS51218  
www.ti.com ............................................................................................................................................................... SLUS935AMAY 2009REVISED JUNE 2009  
Copyright © 2009, Texas Instruments Incorporated  
Submit Documentation Feedback  
21  
Product Folder Link(s): TPS51218  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
15-Jul-2009  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
TPS51218DSCR  
TPS51218DSCT  
SON  
SON  
DSC  
DSC  
10  
10  
3000  
250  
330.0  
180.0  
12.4  
12.4  
3.3  
3.3  
3.3  
3.3  
1.1  
1.1  
8.0  
8.0  
12.0  
12.0  
Q2  
Q2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
15-Jul-2009  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS51218DSCR  
TPS51218DSCT  
SON  
SON  
DSC  
DSC  
10  
10  
3000  
250  
346.0  
190.5  
346.0  
212.7  
29.0  
31.8  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,  
and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should  
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are  
sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.  
TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard  
warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where  
mandated by government requirements, testing of all parameters of each product is not necessarily performed.  
TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and  
applications using TI components. To minimize the risks associated with customer products and applications, customers should provide  
adequate design and operating safeguards.  
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,  
or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information  
published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a  
warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual  
property of the third party, or a license from TI under the patents or other intellectual property of TI.  
Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied  
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive  
business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional  
restrictions.  
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all  
express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not  
responsible or liable for any such statements.  
TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably  
be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing  
such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products  
and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be  
provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in  
such safety-critical applications.  
TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are  
specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military  
specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at  
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.  
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are  
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated  
products in automotive applications, TI will not be responsible for any failure to meet such requirements.  
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:  
Products  
Amplifiers  
Applications  
Audio  
Automotive  
Broadband  
Digital Control  
Medical  
Military  
Optical Networking  
Security  
amplifier.ti.com  
dataconverter.ti.com  
www.dlp.com  
www.ti.com/audio  
Data Converters  
DLP® Products  
DSP  
Clocks and Timers  
Interface  
www.ti.com/automotive  
www.ti.com/broadband  
www.ti.com/digitalcontrol  
www.ti.com/medical  
www.ti.com/military  
www.ti.com/opticalnetwork  
www.ti.com/security  
www.ti.com/telephony  
www.ti.com/video  
dsp.ti.com  
www.ti.com/clocks  
interface.ti.com  
logic.ti.com  
power.ti.com  
microcontroller.ti.com  
www.ti-rfid.com  
Logic  
Power Mgmt  
Microcontrollers  
RFID  
Telephony  
Video & Imaging  
Wireless  
RF/IF and ZigBee® Solutions www.ti.com/lprf  
www.ti.com/wireless  
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2009, Texas Instruments Incorporated  

相关型号:

TPS51219

High Performance, Single-Synchronous Step-Down Controller with Differential Voltage Feedback
TI

TPS51219RTER

High Performance, Single-Synchronous Step-Down Controller with Differential Voltage Feedback
TI

TPS51219RTET

High Performance, Single-Synchronous Step-Down Controller with Differential Voltage Feedback
TI

TPS51219_14

High Performance, Single-Synchronous Step-Down Controller with Differential Voltage Feedback
TI

TPS51220

Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
TI

TPS51220A

Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
TI

TPS51220A-Q1

Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
TI

TPS51220ARSNR

采用 RSN/RTV 封装的适用于笔记本电脑电源的 3V 至 28V 同步峰值电流模式降压控制器 | RSN | 32 | -40 to 85
TI

TPS51220ARSNT

Fixed-frequency, 99% duty cycle peak current-mode notebook system power controller 32-QFN -40 to 85
TI

TPS51220ARTVR

Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
TI

TPS51220ARTVT

Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
TI

TPS51220ATRTVRQ1

Fixed Frequency, 99% Duty Cycle Peak Current Mode Notebook System Power Controller
TI