TPS5420-Q1 [TI]

2-A WIDE-INPUT-RANGE STEP-DOWN SWIFT™ CONVERTER; 2 -A宽输入范围降压SWIFTâ ?? ¢转换器
TPS5420-Q1
型号: TPS5420-Q1
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

2-A WIDE-INPUT-RANGE STEP-DOWN SWIFT™ CONVERTER
2 -A宽输入范围降压SWIFTâ ?? ¢转换器

转换器 输入元件
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TPS5420-Q1  
www.ti.com................................................................................................................................................... SLVS752BNOVEMBER 2007REVISED JUNE 2008  
2-A WIDE-INPUT-RANGE STEP-DOWN SWIFT™ CONVERTER  
1
FEATURES  
APPLICATIONS  
Industrial and Car Audio Power Supplies  
Battery Chargers, High-Power LED Supplies  
12-V/24-V Distributed Power Systems  
2
Qualified for Automotive Applications  
Wide Input Voltage Range: 5.5 V to 36 V  
Up to 2-A Continuous (3-A Peak) Output  
Current  
DESCRIPTION  
High Efficiency up to 95% Enabled by 110-m  
Integrated MOSFET Switch  
As a member of the SWIFT family of dc/dc regulators,  
the TPS5420 is a high-output-current PWM converter  
that integrates a low-resistance high-side N-channel  
MOSFET. Included on the substrate with the listed  
features is a high-performance voltage error amplifier  
that provides tight voltage regulation accuracy under  
transient conditions, an undervoltage-lockout circuit to  
prevent start-up until the input voltage reaches 5.5 V,  
an internally set slow-start circuit to limit inrush  
Wide Output Voltage Range: Adjustable Down  
to 1.22 V With 1.5% Initial Accuracy  
Internal Compensation Minimizes External  
Parts Count  
Fixed 500-kHz Switching Frequency for Small  
Filter Size  
Improved Line Regulation and Transient  
Response by Input Voltage Feed Forward  
currents, and  
a voltage feed-forward circuit to  
improve the transient response. Using the ENA pin,  
shutdown supply current is reduced to 18 µA  
typically. Other features include an active-high  
enable, overcurrent limiting, overvoltage protection,  
and thermal shutdown. To reduce design complexity  
and external component count, the TPS5420  
feedback loop is internally compensated.  
System Protected by Over Current Limiting,  
Over Voltage Protection, and Thermal  
Shutdown  
–40°C to 125°C Operating Junction  
Temperature Range  
Available in Small 8-Pin SOIC Package  
The TPS5420 device is available in an easy-to-use  
8-pin SOIC package. TI provides evaluation modules  
and the SWIFT Designer software tool to aid in  
quickly achieving high-performance power supply  
designs to meet aggressive equipment development  
cycles.  
For SWIFT™ Documentation, Application  
Notes and Design Software, See the TI Website  
at www.ti.com/swift  
Simplified Schematic  
Efficiency vs Output Current  
100  
VIN  
VOUT  
VIN  
PH  
95  
90  
85  
TPS5420  
BOOT  
NC  
NC  
80  
VI = 12 V  
75  
70  
ENA VSENSE  
GND  
65  
60  
55  
50  
0
0.5  
1
1.5  
2
2.5  
3
I
- Output Current - A  
O
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
SWIFT is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2008, Texas Instruments Incorporated  
TPS5420-Q1  
SLVS752BNOVEMBER 2007REVISED JUNE 2008................................................................................................................................................... www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1)  
TJ  
INPUT VOLTAGE  
OUTPUT VOLTAGE  
PACKAGE(2)  
PART NUMBER  
–40°C to 125°C  
5.5 V to 36 V  
Adjustable to 1.22 V  
SOIC (D)  
TPS5420QDRQ1  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
(1) (2)  
VIN  
–0.3 V to 40 V(3)  
–0.3 V to 50 V  
–0.6 V to 40 V(3)  
–0.3 V to 7 V  
–0.3 V to 3 V  
10 V  
BOOT  
PH (steady-state)  
VI  
Input voltage range  
EN  
VSENSE  
BOOT-PH  
PH (transient < 10 ns)  
–1.2 V  
IO  
Source current  
PH  
PH  
Internally limited  
10 µA  
Ilkg  
TJ  
Leakage current  
Operating virtual-junction temperature range  
Storage temperature range  
–40°C to 150°C  
–65°C to 150°C  
2000 V  
Tstg  
Human-Body Model (HBM)  
Machine Model (MM)  
ESD  
Electrostatic discharge rating  
150 V  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltage values are with respect to network ground terminal.  
(3) Approaching the absolute maximum rating for the VIN pin may cause the voltage on the PH pin to exceed the absolute maximum rating.  
DISSIPATION RATINGS(1) (2)  
THERMAL IMPEDANCE  
JUNCTION-TO-AMBIENT  
PACKAGE  
(3)  
8-pin D  
75°C/W  
(1) Maximum power dissipation may be limited by overcurrent protection.  
(2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 125°C. This is the point where  
distortion starts to substantially increase. Thermal management of the final PCB should strive to keep the junction temperature at or  
below 125°C for best performance and long-term reliability. See Thermal Calculations in applications section of this data sheet for more  
information.  
(3) Test board conditions:  
a. 3 in × 3 in, two layers, thickness: 0.062 inch  
b. 2-oz. copper traces located on the top and bottom of the PCB  
RECOMMENDED OPERATING CONDITIONS  
MIN  
5.5  
MAX  
36  
UNIT  
V
VI  
Input voltage range, VIN  
TJ  
Operating junction temperature  
–40  
125  
°C  
2
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Copyright © 2007–2008, Texas Instruments Incorporated  
Product Folder Link(s): TPS5420-Q1  
TPS5420-Q1  
www.ti.com................................................................................................................................................... SLVS752BNOVEMBER 2007REVISED JUNE 2008  
ELECTRICAL CHARACTERISTICS  
TJ = –40°C to 125°C, VIN = 5.5 V to 36 V (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
SUPPLY VOLTAGE (VIN PIN)  
VSENSE = 2 V, Not switching, PH pin open  
Shutdown, ENA = 0 V  
3
4.4  
50  
mA  
IQ  
Quiescent current  
18  
µA  
UNDERVOLTAGE LOCKOUT (UVLO)  
Start threshold voltage, UVLO  
Hysteresis voltage, UVLO  
5.3  
5.5  
V
330  
mV  
VOLTAGE REFERENCE  
TJ = 25°C  
1.202  
1.196  
1.221  
1.221  
1.239  
1.245  
Voltage reference accuracy  
V
IO = 0 A to 2 A  
OSCILLATOR  
Internally set free-running frequency  
Minimum controllable on time  
Maximum duty cycle  
400  
500  
150  
600  
200  
kHz  
ns  
87%  
89%  
ENABLE (ENA PIN)  
Start threshold voltage, ENA  
Stop threshold voltage, ENA  
Hysteresis voltage, ENA  
Internal slow-start time (0 ~ 100%)  
CURRENT LIMIT  
1.3  
10  
V
V
0.5  
5.4  
450  
8
mV  
ms  
Current limit  
3
4
6.5  
21  
A
Current-limit hiccup time  
THERMAL SHUTDOWN  
Thermal shutdown trip point  
Thermal shutdown hysteresis  
OUTPUT MOSFET  
13  
16  
ms  
135  
162  
14  
°C  
°C  
VIN = 5.5 V  
150  
110  
rDS(on)  
High-side power MOSFET switch  
m  
VIN = 10 V to 36 V  
230  
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SLVS752BNOVEMBER 2007REVISED JUNE 2008................................................................................................................................................... www.ti.com  
PIN ASSIGNMENTS  
D PACKAGE  
(TOP VIEW)  
1
2
3
4
8
7
6
5
BOOT  
NC  
PH  
VIN  
NC  
GND  
ENA  
VSENSE  
TERMINAL FUNCTIONS  
TERMINAL  
DESCRIPTION  
NAME  
BOOT  
NC  
NO.  
1
Boost capacitor for the high-side FET gate driver. Connect 0.01-µF low ESR capacitor from BOOT pin to PH pin.  
Not connected internally  
2, 3  
4
VSENSE  
ENA  
Feedback voltage for the regulator. Connect to output voltage divider.  
On/off control. Below 0.5 V, the device stops switching. Float the pin to enable.  
Ground  
5
GND  
6
Input supply voltage. Bypass VIN pin to GND pin close to device package with a high-quality low-ESR ceramic  
capacitor.  
VIN  
PH  
7
8
Source of the high-side power MOSFET. Connected to external inductor and diode.  
4
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TPS5420-Q1  
www.ti.com................................................................................................................................................... SLVS752BNOVEMBER 2007REVISED JUNE 2008  
TYPICAL CHARACTERISTICS  
OSCILLATOR FREQUENCY  
vs  
JUNCTION TEMPERATURE  
OPERATING QUIESCENT CURRENT  
MINIMUM CONTROLLABLE ON TIME  
vs  
vs  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
530  
520  
3.5  
180  
170  
V
= 12 V  
I
3.25  
510  
160  
150  
500  
490  
480  
3
140  
130  
120  
2.75  
2.5  
470  
460  
-50  
-25  
0
25  
50  
75  
100  
125  
-50  
-25  
0
25  
50  
75  
100  
125  
-50  
-25  
0
25  
50  
75  
100  
125  
− Junction Temperature − o  
C
T
− Junction Temperature − o  
C
T
− Junction Temperature − o  
C
T
J
J
J
Figure 1.  
Figure 2.  
Figure 3.  
VOLTAGE REFERENCE  
vs  
JUNCTION TEMPERATURE  
ON-STATE RESISTANCE  
vs  
JUNCTION TEMPERATURE  
INTERNAL SLOW START TIME  
vs  
JUNCTION TEMPERATURE  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
1.23  
9
V
= 12 V  
I
1.225  
1.22  
8.5  
8
1.215  
1.21  
7.5  
80  
7
-50  
-25  
0
25  
50  
75  
100  
125  
-50  
-25  
0
25  
50  
75  
100  
125  
-50  
-25  
0
25  
50  
75  
100  
125  
T
− Junction Temperature − o  
C
T
− Junction Temperature − o  
C
J
J
T
− Junction Temperature − o  
C
J
Figure 4.  
Figure 5.  
Figure 6.  
MINIMUM CONTROLLABLE DUTY  
SHUTDOWN QUIESCENT CURRENT  
RATIO  
vs  
vs  
INPUT VOLTAGE  
JUNCTION TEMPERATURE  
8
25  
20  
15  
10  
5
ENA = 0 V  
T
= 125oC  
J
J
7.5  
T
= 27oC  
7.5  
7.25  
T
= -40oC  
J
7
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
− Junction Temperature − o  
C
V
− Input Voltage − V  
I
T
J
Figure 7.  
Figure 8.  
Copyright © 2007–2008, Texas Instruments Incorporated  
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TPS5420-Q1  
SLVS752BNOVEMBER 2007REVISED JUNE 2008................................................................................................................................................... www.ti.com  
APPLICATION INFORMATION  
FUNCTIONAL BLOCK DIAGRAM  
VIN  
VIN  
VREF  
SHDN  
Boot  
Regulator  
1.221 V Bandgap  
Reference  
Slow Start  
UVLO  
BOOT  
HICCUP  
5 µA  
SHDN  
ENABLE  
ENA  
SHDN  
VSENSE  
Z1  
Thermal  
Protection  
Error  
Amplifier  
SHDN  
SHDN  
Z2  
Ramp  
NC  
VIN  
Feed Forward  
Gain = 25  
Generator  
NC  
HICCUP  
PWM  
Comparator  
SHDN  
GND  
Overcurrent  
Protection  
Oscillator  
SHDN  
SHDN  
Gate Drive  
Control  
VSENSE  
112.5% VREF  
OVP  
Gate  
Driver  
SHDN  
PH  
BOOT  
VOUT  
DETAILED DESCRIPTION  
Oscillator Frequency  
The internal free running oscillator sets the PWM switching frequency at 500 kHz. The 500-kHz switching  
frequency allows less output inductance for the same output ripple requirement resulting in a smaller output  
inductor.  
Voltage Reference  
The voltage reference system produces a precision reference signal by scaling the output of a temperature  
stable bandgap circuit. The bandgap and scaling circuits are trimmed during production testing to an output of  
1.221 V at room temperature.  
Enable (ENA) and Internal Slow Start  
The ENA pin provides electrical on/off control of the regulator. Once the ENA pin voltage exceeds the threshold  
voltage, the regulator starts operation and the internal slow start begins to ramp. If the ENA pin voltage is pulled  
below the threshold voltage, the regulator stops switching and the internal slow start resets. Connecting the pin  
to ground or to any voltage less than 0.5 V disables the regulator and activates the shutdown mode. The  
quiescent current of the TPS5420 in shutdown mode is typically 18 µA.  
6
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The ENA pin has an internal pullup current source, allowing the user to float the ENA pin. If an application  
requires controlling the ENA pin, use open-drain or open-collector output logic to interface with the pin. To limit  
the start-up inrush current, an internal slow start circuit is used to ramp up the reference voltage from 0 V to its  
final value linearly. The internal slow start time is 8 ms typically.  
Undervoltage Lockout (UVLO)  
The TPS5420 incorporates a UVLO circuit to keep the device disabled when VIN (the input voltage) is below the  
UVLO start voltage threshold. During power up, internal circuits are held inactive and the internal slow start is  
grouded until VIN exceeds the UVLO start threshold voltage. Once the UVLO start threshold voltage is reached,  
the internal slow start is released and device start-up begins. The device operates until VIN falls below the UVLO  
stop threshold voltage. The typical hysteresis in the UVLO comparator is 330 mV.  
Boost Capacitor (BOOT)  
Connect a 0.01-µF low-ESR ceramic capacitor between the BOOT pin and PH pin. This capacitor provides the  
gate drive voltage for the high-side MOSFET. X7R or X5R grade dielectrics are recommended due to their stable  
values over temperature.  
Output Feedback (VSENSE)  
The output voltage of the regulator is set by feeding back the center point voltage of an external resistor divider  
network to the VSENSE pin. In steady-state operation, the VSENSE pin voltage should be equal to the voltage  
reference 1.221 V.  
Internal Compensation  
The TPS5420 implements internal compensation to simplify the regulator design. Since the TPS5420 uses  
voltage-mode control, a type-3 compensation network has been designed on chip to provide a high crossover  
frequency and a high phase margin for good stability. See Internal Compensation Network in the Advanced  
Information section for more details.  
Voltage Feed Forward  
The internal voltage feed forward provides a constant DC power stage gain despite any variations with the input  
voltage. This greatly simplifies the stability analysis and improves the transient response. Voltage feed forward  
varies the peak ramp voltage inversely with the input voltage so that the modulator and power stage gain are  
constant at the feed forward gain, i.e.:  
VIN  
Feed Forward Gain =  
Ramp  
pk-pk  
(1)  
The typical feed forward gain of TPS5420 is 25.  
Pulse-Width-Modulation (PWM) Control  
The regulator employs a fixed-frequency PWM control method. First, the feedback voltage (VSENSE pin voltage)  
is compared to the constant voltage reference by the high-gain error amplifier and compensation network to  
produce a error voltage. Then, the error voltage is compared to the ramp voltage by the PWM comparator. In this  
way, the error voltage magnitude is converted to a pulse width that is the duty cycle. Finally, the PWM output is  
fed into the gate drive circuit to control the on time of the high-side MOSFET.  
Overcurrent Limiting  
Overcurrent limiting is implemented by sensing the drain-to-source voltage across the high-side MOSFET. The  
drain-to-source voltage is then compared to a voltage level representing the overcurrent threshold limit. If the  
drain-to-source voltage exceeds the overcurrent threshold limit, the overcurrent indicator is set true. The system  
ignores the overcurrent indicator for the leading-edge blanking time at the beginning of each cycle to avoid any  
turn-on noise glitches.  
Once overcurrent indicator is set true, overcurrent limiting is triggered. The high-side MOSFET is turned off for  
the rest of the cycle after a propagation delay. The overcurrent limiting scheme is called cycle-by-cycle current  
limiting.  
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SLVS752BNOVEMBER 2007REVISED JUNE 2008................................................................................................................................................... www.ti.com  
Sometimes, under serious overload conditions such as short-circuit, the overcurrent runaway may still occur  
when using cycle-by-cycle current limiting. A second mode of current limiting is used, i.e., hiccup mode  
overcurrent limiting. During hiccup mode overcurrent limiting, the voltage reference is grounded and the high-side  
MOSFET is turned off for the hiccup time. Once the hiccup time duration is complete, the regulator restarts under  
control of the slow start circuit.  
Overvoltage Protection (OVP)  
The TPS5420 has an OVP circuit to minimize voltage overshoot when recovering from output fault conditions.  
The OVP circuit includes an overvoltage comparator to compare the VSENSE pin voltage and a threshold of  
112.5% × VREF. Once the VSENSE pin voltage is higher than the threshold, the high-side MOSFET is forced  
off. When the VSENSE pin voltage drops lower than the threshold, the high-side MOSFET is enabled again.  
Thermal Shutdown  
The TPS5420 protects itself from overheating with an internal thermal shutdown circuit. If the junction  
temperature exceeds the thermal shutdown trip point, the voltage reference is grounded and the high-side  
MOSFET is turned off. The part is restarted under control of the slow start circuit automatically when the junction  
temperature drops 14°C below the thermal shutdown trip point.  
PCB Layout  
Connect a low-ESR ceramic bypass capacitor to the VIN pin. Care should be taken to minimize the loop area  
formed by the bypass capacitor connections, the VIN pin, and the TPS5420 ground pin. The best way to do this  
is to extend the top-side ground area from under the device adjacent to the VIN trace, and place the bypass  
capacitor as close as possible to the VIN pin. The minimum recommended bypass capacitance is 4.7-µF ceramic  
with a X5R or X7R dielectric.  
There should be a ground area on the top layer directly underneath the IC to connect the GND pin of the device  
and the anode of the catch diode. The GND pin should be tied to the PCB ground by connecting it to the ground  
area under the device as shown in Figure 9.  
The PH pin should be routed to the output inductor, catch diode and boot capacitor. Since the PH connection is  
the switching node, the inductor should be located close to the PH pin, and the area of the PCB conductor  
minimized to prevent excessive capacitive coupling. The catch diode should also be placed close to the device to  
minimize the output current loop area. Connect the boot capacitor between the phase node and the BOOT pin as  
shown. Keep the boot capacitor close to the IC and minimize the conductor trace lengths. The component  
placements and connections shown work well, but other connection routings may also be effective.  
Connect the output filter capacitor(s) as shown between the VOUT trace and GND. It is important to keep the  
loop formed by the PH pin, Lout, Cout, and GND as small as is practical.  
Connect the VOUT trace to the VSENSE pin using the resistor divider network to set the output voltage. Do not  
route this trace too close to the PH trace. Due to the size of the IC package and the device pinout, the trace may  
need to be routed under the output capacitor. The routing may be done on an alternate layer if a trace under the  
output capacitor is not desired.  
If using the grounding scheme shown in Figure 9, use a via connection to a different layer to route to the ENA  
pin.  
8
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www.ti.com................................................................................................................................................... SLVS752BNOVEMBER 2007REVISED JUNE 2008  
PH  
CATCH  
DIODE  
BOOT  
CAPACITOR  
INPUT  
BULK  
FILTER  
INPUT  
BYPASS  
CAPACITOR  
BOOT  
NC  
PH  
VIN  
OUTPUT  
INDUCTOR  
Vin  
NC  
GND  
ENA  
RESISTOR  
DIVIDER  
VSENSE  
VOUT  
OUTPUT  
FILTER  
CAPACITOR  
TOPSIDE GROUND AREA  
VIA to Ground Plane  
Signal VIA  
Route feedback  
trace under the output  
filter capacitor or on  
the other layer.  
Figure 9. Design Layout  
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0.220  
0.080  
All dimensions in inches  
Figure 10. TPS5420 Land Pattern  
Application Circuits  
Figure 11 shows the schematic for a typical TPS5420 application. The TPS5420 can provide up to 2-A output  
current at a nominal output voltage of 5 V.  
U1  
L1  
33 mH  
C2  
0.01 mF  
TPS5420D  
TP5  
10 V - 35 V  
7
5
2
5 V  
VIN  
VIN  
1
8
4
BOOT  
PH  
VOUT  
ENA  
NC  
ENA  
C1  
4.7 mF  
C4  
4.7 mF  
+
D1  
B340A  
C3  
100 mF  
(See Note A)  
R1  
10 kW  
3
6
NC  
VSNS  
GND  
R2  
3.24 kW  
A. C3 = Tantalum AVX TPSD107M010R0080  
Figure 11. Application Circuit, 10-V to 35-V Input to 5-V Output  
10  
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www.ti.com................................................................................................................................................... SLVS752BNOVEMBER 2007REVISED JUNE 2008  
Design Procedure  
The following design procedure can be used to select component values for the TPS5420. Alternately, the  
SWIFT Designer Software may be used to generate a complete design. The SWIFT Designer Software uses an  
iterative design procedure and accesses a comprehensive database of components when generating a design.  
This section presents a simplified discussion of the design process.  
To begin the design process, a few parameters must be determined. The designer must know the following:  
Input voltage range  
Output voltage  
Input ripple voltage  
Output ripple voltage  
Output current rating  
Operating frequency  
Design Parameters  
For this design example, use the following as the input parameters:  
DESIGN PARAMETER(1)  
Input voltage range  
Output voltage  
EXAMPLE VALUE  
10 V to 36 V  
5 V  
Input ripple voltage  
Output ripple voltage  
Output current rating  
Operating frequency  
300 mV  
30 mV  
2 A  
500 kHz  
(1) As an additional constraint, the design is set up to be small size and low component height.  
Switching Frequency  
The switching frequency for the TPS5420 is internally set to 500 kHz. It is not possible to adjust the switching  
frequency.  
Input Capacitors  
The TPS5420 requires an input decoupling capacitor and, depending on the application, a bulk input capacitor.  
The recommended value for the decoupling capacitor is 10 µF. A high-quality ceramic type X5R or X7R is  
required. For some applications, a smaller-value decoupling capacitor may be used, if the input voltage and  
current ripple ratings are not exceeded. The voltage rating must be greater than the maximum input voltage,  
including ripple. For this design, two 4.7-µF capacitors, C1 and C4 are used to allow for smaller 1812 case size  
to be used while maintaining a 50-V rating.  
This input ripple voltage can be approximated by Equation 2 :  
I
× 0.25  
OUT(MAX)  
+ I  
(
× ESR  
MAX  
DV  
=
)
OUT(MAX)  
IN  
C
× ƒSW  
BULK  
(2)  
Where IOUT(MAX) is the maximum load current, fSW is the switching frequency, CI is the input capacitor value, and  
ESRMAX is the maximum series resistance of the input capacitor.  
The maximum RMS ripple current also needs to be checked. For worst-case conditions, this is approximated by  
Equation 3:  
I
OUT(MAX)  
I
+
CIN  
2
(3)  
In this case, the calculated input ripple voltage is 118 mV, and the RMS ripple current is 1 A. The maximum  
voltage across the input capacitors would be VIN max plus delta VIN/2. The chosen input decoupling capacitors  
are rated for 50 V, and the ripple current capacity for each is 3 A at 500 kHz, providing ample margin. The actual  
measured input ripple voltage may be larger than the calculated value, due to the output impedance of the input  
voltage source and parasitics associated with the layout.  
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CAUTION:  
The maximum ratings for voltage and current are not to be exceeded under any  
circumstance.  
Additionally, some bulk capacitance may be needed, especially if the TPS5420 circuit is not located within  
approximately two inches from the input voltage source. The value for this capacitor is not critical, but it should  
be rated to handle the maximum input voltage including ripple voltage and should filter the output so that input  
ripple voltage is acceptable.  
Output Filter Components  
Two components need to be selected for the output filter, L1 and C2. Since the TPS5420 is an internally  
compensated device, a limited range of filter component types and values can be supported.  
Inductor Selection  
To calculate the minimum value of the output inductor, use Equation 4:  
V
× V  
(
– V  
)
OUT  
IN(MAX)  
OUT  
SW  
L
=
MIN  
V
× K  
IND  
× I  
× F  
× 0.8  
IN(max)  
OUT  
(4)  
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.  
Three things need to be considered when determining the amount of ripple current in the inductor: the  
peak-to-peak ripple current affects the output ripple voltage amplitude, the ripple current affects the peak switch  
current, and the amount of ripple current determines at what point the circuit becomes discontinuous. For  
designs using the TPS5420, KIND of 0.2 to 0.3 yields good results. Low output ripple voltages are obtained when  
paired with the proper output capacitor, the peak switch current is below the current limit set point, and low load  
currents can be sourced before discontinuous operation.  
For this design example, use KIND = 0.2, and the minimum inductor value is 31 µH. The next highest standard  
value used in this design is 33 µH.  
For the output filter inductor, it is important that the RMS current and saturation current ratings not be exceeded.  
The RMS inductor current is found from Equation 5:  
2
ǒV  
OUTǓ  
V
 
* V  
IN(MAX)  
  L   F  
OUT  
1
12  
I2  
I
+
)
 
ǒ
Ǔ
Ǹ
L(RMS)  
OUT(MAX)  
V
  0.8  
IN(MAX)  
OUT  
SW  
(5)  
and the peak inductor current is determined from Equation 6:  
V
× V  
(
V  
OUT  
)
OUT  
IN(MAX)  
× L  
I
= I  
+
L(PK)  
OUT(MAX)  
1.6 × V  
× F  
OUT SW  
IN(MAX)  
(6)  
For this design, the RMS inductor current is 2.002 A, and the peak inductor current is 2.16 A. The chosen  
inductor is a Coilcraft MSS1260-333 type. The nominal inductance is 33 µH. It has a saturation current rating of  
2.2 A and a RMS current rating of 2.7 A, which meet the requirements. Inductor values for use with the TPS5420  
are in the range of 10 µH to 100 µH.  
Capacitor Selection  
The important design factors for the output capacitor are dc voltage rating, ripple current rating, and equivalent  
series resistance (ESR). The dc voltage and ripple current ratings cannot be exceeded. The ESR is important  
because, along with the inductor ripple current, it determines the amount of output ripple voltage. The actual  
value of the output capacitor is not critical, but some practical limits do exist. Consider the relationship between  
the desired closed loop crossover frequency of the design and LC corner frequency of the output filter. Due to  
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the design of the internal compensation, it is recommended to keep the closed-loop crossover frequency in the  
range 3 kHz to 30 kHz, as this frequency range has adequate phase boost to allow for stable operation. For this  
design example, the intended closed-loop crossover frequency is between 2590 Hz and 24 kHz and below the  
ESR zero of the output capacitor. Under these conditions, the closed-loop crossover frequency is related to the  
LC corner frequency as:  
2
f
LC  
f
+
CO  
85 V  
OUT  
(7)  
and the desired output capacitor value for the output filter to:  
1
  f  
C
+
OUT  
3357   L  
  V  
OUT  
CO  
OUT  
(8)  
For a desired crossover of 18 kHz and a 33-µH inductor, the calculated value for the output capacitor is 100 µF.  
The capacitor type should be chosen so that the ESR zero is above the loop crossover. The maximum ESR is:  
1
ESR  
+
MAX  
2p   C  
  f  
OUT  
CO  
(9)  
The maximum ESR of the output capacitor also determines the amount of output ripple as specified in the initial  
design parameters. The output ripple voltage is the inductor ripple current times the ESR of the output filter.  
Check that the maximum specified ESR listed in the capacitor data sheet results in an acceptable output ripple  
voltage:  
ESR  
× V  
× V  
(
V  
IN(MAX) OUT  
)
MAX  
OUT  
V
(MAX) =  
PP  
N
× V  
× L  
× F  
SW  
× 0.8  
C
IN(MAX)  
OUT  
(10)  
Where:  
ΔVPP is the desired peak-to-peak output ripple.  
NC is the number of parallel output capacitors.  
FSW is the switching frequency.  
The minimum ESR of the output capacitor should also be considered. For a good phase margin, if the ESR is  
zero when the ESR is at its minimum, it should not be above the internal compensation poles at 24 kHz and  
54 kHz.  
The selected output capacitor must also be rated for a voltage greater than the desired output voltage plus  
one-half the ripple voltage. Any derating amount must also be included. The maximum RMS ripple current in the  
output capacitor is given by Equation 11:  
V
× V  
(
– V  
)
OUT  
IN(MAX) OUT  
1
x
I
=
COUT(RMS)  
12  
[
]
V
× L  
– F  
× 0.8 × N  
IN(MAX)  
OUT  
SW C  
(11)  
Where:  
NC is the number of output capacitors in parallel.  
FSW is the switching frequency.  
For this design example, a single 100-µF output capacitor is chosen for C3. The calculated RMS ripple current is  
143 mA and the maximum ESR required is 88 m. A capacitor that meets these requirements is a AVX  
TPSD107M010R0080, rated at 10 V with a maximum ESR of 80 mand a ripple current rating of 1.369 A. This  
capacitor results in a peak-to-peak output ripple of 26 mV using equation 10. An additional small 0.1-µF ceramic  
bypass capacitor may also used, but is not included in this design.  
Other capacitor types can be used with the TPS5420, depending on the needs of the application.  
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Output Voltage Setpoint  
The output voltage of the TPS5420 is set by a resistor divider (R1 and R2) from the output to the VSENSE pin.  
Calculate the R2 resistor value for the output voltage of 5 V using Equation 12:  
R1   1.221  
R2 +  
V
* 1.221  
OUT  
(12)  
For any TPS5420 design, start with an R1 value of 10 k. R2 is then 3.24 k.  
Boot Capacitor  
The boot capacitor should be 0.01 µF.  
Catch Diode  
The TPS5420 is designed to operate using an external catch diode between PH and GND. The selected diode  
must meet the absolute maximum ratings for the application: reverse voltage must be higher than the maximum  
voltage at the PH pin, which is VINMAX + 0.5 V. Peak current must be greater than IOUTMAX plus one-half the  
peak-to-peak inductor current. Forward voltage drop should be small for higher efficiencies. It is important to note  
that the catch diode conduction time is typically longer than the high-side FET on time; therefore, the diode  
parameters improve the overall efficiency. Additionally, check that the device chosen is capable of dissipating the  
power losses. For this design, a Diodes, Inc. B340A is chosen, with a reverse voltage of 40 V, forward current of  
3 A, and a forward voltage drop of 0.5 V.  
Additional Circuits  
Figure 12 shows an application circuit using a wide input voltage range. The design parameters are similar to  
those given for the design example, with a larger value output inductor and a lower closed-loop crossover  
frequency.  
U1  
TPS5420D  
L1  
27 mH  
C2  
0.01 mF  
TP5  
10 V - 21 V  
7
VIN  
5 V  
VIN  
ENA  
NC  
1
8
4
BOOT  
VOUT  
5
2
3
6
ENA  
C1  
10 mF  
+
PH  
C3  
100 mF  
(See Note A)  
D1  
B340A  
R1  
10 kW  
NC  
VSNS  
GND  
R2  
3.24 kW  
A. C3 = Tantalum AVX TPSD107M010R0080  
Figure 12. 10-V to 21-V Input to 5-V Output Application Circuit  
Circuit Using Ceramic Output Filter Capacitors  
Figure 13 shows an application circuit using all ceramic capacitors for the input and output filters that generates a  
3.3-V output from a 10-V to 24-V input. The design procedure is similar to those given for the design example,  
except for the selection of the output filter capacitor values and the design of the additional compensation  
components required to stabilize the circuit.  
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U1  
TPS5420D  
L1  
18 mH  
C2  
0.01 mF  
VIN 10-24 V  
7
3.3 V  
VIN  
VIN  
1
8
4
VOUT  
BOOT  
PH  
5
2
3
6
EN  
ENA  
NC  
C1  
4.7 mF  
C3  
47 mF  
C4  
47 mF  
D1  
MRBS340  
NC  
VSNS  
GND  
PwPd  
9
R1  
10 kW  
C7  
0.1 mF  
C4  
150 pF  
R2  
5.9 kW  
C6  
1800 pF  
R3  
549 W  
Figure 13. Ceramic Output Filter Capacitors Circuit  
Output Filter Component Selection  
Using Equation 11, the minimum inductor value is 17.9 µH. A value of 18 µH is chosen for this design.  
When using ceramic output filter capacitors, the recommended LC resonant frequency should be no more than  
7 kHz. Since the output inductor is already selected at 18 µH, this limits the minimum output capacitor value to:  
1
C
(MIN)  
O
(2π × 7000)2 × L  
O
(13)  
The minimum capacitor value is calculated to be 29 µF. For this circuit a larger value of capacitor yields better  
transient response. Two 47-µF output capacitors are used for C3 and C4. It is important to note that the actual  
capacitance of ceramic capacitors decreases with applied voltage. In this example, the output voltage is set to  
3.3 V, minimizing this effect.  
External Compensation Network  
When using ceramic output capacitors, additional circuitry is required to stabilize the closed-loop system. For this  
circuit, the external components are R3, C5, C6, and C7. To determine the value of these components, first  
calculate the LC resonant frequency of the output filter:  
1
F
=
LC  
2π L × C (EFF)  
O
O
(14)  
For this example, the effective resonant frequency is calculated as 4109 Hz.  
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The network composed of R1, R2, R3, C5, C6, and C7 has two poles and two zeros that are used to tailor the  
overall response of the feedback network to accommodate the use of the ceramic output capacitors. The pole  
and zero locations are given by the following equations:  
V
O
Fp1 = 500000 ×  
F
LC  
(15)  
(16)  
(17)  
Fz1 = 0.7 × F  
LC  
Fz2 = 2.5 × F  
LC  
The final pole is located at a frequency too high to be of concern. The second zero, Fz2 as defined by  
Equation 17 uses 2.5 for the frequency multiplier. In some cases this may need to be slightly higher or lower.  
Values in the range of 2.3 to 2.7 work well. The values for R1 and R2 are fixed by the 3.3-V output voltage as  
calculated usingEquation 12. For this design R1 = 10 kand R2 = 5.90 k. With Fp1 = 426 Hz, Fz1 = 2708 Hz  
and Fz2 = 8898 Hz, the values of R3, C6 and C7 are determined using Equation 18, Equation 19, and  
Equation 20:  
1
C7 =  
2π × Fp1 × (R1 || R2)  
(18)  
1
R3 =  
2π × Fz1 × C7  
(19)  
1
C6 =  
2π × Fz2 × R1  
(20)  
For this design, using the closest standard values, C7 is 0.1 µF, R3 is 590 , and C6 is 1800 pF. C5 is added to  
improve load regulation performance. It is effectively in parallel with C6 in the location of the second pole  
frequency, so it should be small in relationship to C6. C5 should be less the 1/10 the value of C6. For this  
example, 150 pF works well.  
For additional information on external compensation of the TPS5420 or other wide voltage range SWIFT devices,  
see Using TPS5410/20/30/31 With Aluminum/Ceramic Output Capacitors (TI literature number SLVA237).  
ADVANCED INFORMATION  
Output Voltage Limitations  
Due to the internal design of the TPS5420, there are both upper and lower output voltage limits for any given  
input voltage. The upper limit of the output voltage set point is constrained by the maximum duty cycle of 87%  
and is given by:  
ǒǒV  
  0.230Ǔ ) V Ǔ* ǒI  
LǓ* V  
D
V
+ 0.87   
* I  
  R  
OUTMAX  
INMIN  
OMAX  
D
OMAX  
(21)  
Where:  
VINMIN is the minimum input voltage.  
IOMAX is the maximum load current.  
VD is the catch diode forward voltage.  
RL is the output inductor series resistance.  
This equation assumes maximum on resistance for the internal high side FET.  
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The lower limit is constrained by the minimum controllable on time, which may be as high as 200 ns. The  
approximate minimum output voltage for a given input voltage and minimum load current is given by:  
ǒǒV  
  0.110Ǔ ) V Ǔ* ǒI  
LǓ* V  
D
V
+ 0.12   
* I  
  R  
OUTMIN  
INMAX  
OMIN  
D
OMIN  
(22)  
Where:  
VINMAX is the maximum input voltage.  
IOMIN is the minimum load current.  
VD is the catch diode forward voltage.  
RL is the output inductor series resistance.  
This equation assumes nominal on resistance for the high-side FET and accounts for worst-case variation of  
operating frequency set point. Any design operating near the operational limits of the device should be  
checked to ensure proper functionality.  
Internal Compensation Network  
The design equations given in the example circuit can be used to generate circuits using the TPS5420. These  
designs are based on certain assumptions, and always select output capacitors within a limited range of ESR  
values. If a different capacitor type is desired, it may be possible to fit one to the internal compensation of the  
TPS5420. Equation 23 gives the nominal frequency response of the internal voltage-mode type-3 compensation  
network:  
s
s
ǒ1 )  
Ǔ ǒ  
  1 )  
Ǔ
2p Fz1  
2p Fz2  
H(s) +  
s
s
s
s
ǒ Ǔ ǒ  
Ǔ ǒ  
  1 )  
Ǔ ǒ  
  1 )  
Ǔ
  1 )  
2p Fp0  
2p Fp1  
2p Fp2  
2p Fp3  
(23)  
Where  
Fp0 = 2165 Hz, Fz1 = 2170 Hz, Fz2 = 2590 Hz  
Fp1 = 24 kHz, Fp2 = 54 kHz, Fp3 = 440 kHz  
Fp3 represents the non-ideal parasitics effect.  
Using this information along with the desired output voltage, feed-forward gain, and output filter characteristics,  
the closed-loop transfer function can be derived.  
Thermal Calculations  
The following formulas show how to estimate the device power dissipation under continuous conduction mode  
operations. They should not be used if the device is working at light loads in the discontinuous conduction mode.  
Conduction Loss: Pcon = IOUT2 × Rds(on) × VOUT/VIN  
Switching Loss: Psw = VIN × IOUT × 0.01  
Quiescent Current Loss: Pq = VIN × 0.01  
Total Loss: Ptot = Pcon + Psw + Pq  
Given TA => Estimated Junction Temperature: TJ = TA + Rth × Ptot  
Given TJMAX = 125°C => Estimated Maximum Ambient Temperature: TAMAX = TJMAX – Rth × Ptot  
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PERFORMANCE GRAPHS  
The performance graphs (Figure 14 through Figure 20) are applicable to the circuit in Figure 11, TA = 25°C  
(unless otherwise specified)  
0.3  
0.3  
100  
V
= 10.8 V  
I
0.2  
0.2  
V
= 12 V  
95  
90  
I
I
= 2 A  
V
= 15 V  
O
I
0.1  
0
0.1  
0
I
= 0 A  
O
85  
V
= 18 V  
V
= 19.8 V  
-0.1  
-0.1  
I
I
I
= 1 A  
O
80  
75  
-0.2  
-0.3  
-0.2  
-0.3  
2
2
V - Input Voltage - V  
I
0
0.5  
1
1.5  
2.5  
3
0
0.5  
1
1.5  
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
I
- Output Current - A  
O
I
- Output Current - A  
O
Figure 14. Efficiency  
vs Output Current  
Figure 15. Output Regulation  
vs Output Current  
Figure 16. Input Regulation  
vs Input Voltage  
VIN = 100 mV/Div (AC Coupled)  
VOUT = 20 mV/Div (AC Coupled)  
V
OUT = 50 mV/Div (AC Coupled)  
PH = 5 V/Div  
PH = 5 V/Div  
IOUT = 500 mA/Div  
t - Time = 200 μs/Div  
t - Time - 1 ms / Div  
t - Time - 1 ms / Div  
Figure 17. Input Voltage Ripple  
and PH Node, IO = 3 A  
Figure 18. Output Voltage Ripple  
and PH Node, IO = 3 A  
Figure 19. Transient Response,  
IO Step 0.5 to 1.5 A  
VIN = 10 V/Div  
ENA = 2 V/Div  
VOUT = 2 V/Div  
VOUT = 2 V/Div  
t - Time = 5 ms/Div  
t - Time = 5 ms/Div  
Figure 20. Startup Waveform,  
VIN and VOUT  
Figure 21. Startup Waveform,  
ENA and VOUT  
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PACKAGE OPTION ADDENDUM  
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18-Sep-2008  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
TPS5420QDRQ1  
ACTIVE  
SOIC  
D
8
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on  
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited  
information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF TPS5420-Q1 :  
Catalog: TPS5420  
Enhanced Product: TPS5420-EP  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Enhanced Product - Supports Defense, Aerospace and Medical Applications  
Addendum-Page 1  
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