TPS73219 [TI]

250mA Low-Dropout Regulator for C2000™; 250毫安低压差稳压C2000â ?? ¢
TPS73219
型号: TPS73219
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

250mA Low-Dropout Regulator for C2000™
250毫安低压差稳压C2000â ?? ¢

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TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
250mA Low-Dropout Regulator for C2000  
Check for Samples: TPS73219  
1
FEATURES  
DESCRIPTION  
The TPS73219 family is a low-dropout (LDO) voltage  
regulator that offers very good line and load transient  
response even without the use of an output capacitor.  
The TPS73219 is ideal for driving the C2000 MCUs  
fron Texas Instruments. The device offers very low  
dropout voltage, thereby reducing power loss.  
23  
Optimal Output Voltage for Core Rail of C2000  
Good Line/Load Transient Response for MCUs  
250mA LDO Voltage Regulator with Enable  
Very Low Dropout Voltage: 40mV (typ) at  
250mA  
Reverse Current Protection  
Stable with or without Output Capacitor  
1% Overall Accuracy (Line, Load, and  
Temperature)  
Available in a 5-Pin SOT23 Package  
In combination with a voltage supervisor such as the  
TPS3808G19 or TPS3808G01, the TPS73219 can  
deliver tight VCORE voltages and generate accurate  
power-good signals that meet or exceed power  
requirements for the C2000.  
The TPS73219 is available in a 5-pin SOT23  
package.  
APPLICATIONS  
C2000 Core Power Rail Supply  
DBV PACKAGE  
SOT23  
(TOP VIEW)  
1
2
3
IN  
GND  
EN  
5
4
OUT  
NR/FB  
1.8 V  
3.3 V  
10 kW  
TPS3808G01 or  
TPS3808G19  
10 kW  
C2000  
TPS73219 or  
TPS73534 or  
TPS73734  
TPS73619  
TPS3808G01  
EN  
OUT  
SENSE  
SVS  
1.8 V  
RESET  
EN  
OUT  
SENSE  
SVS  
3.3 V  
RESET  
XRS  
LDO  
1.8 V  
LDO  
3.3 V  
51 kW  
15 kW  
91 kW  
13 kW  
Figure 1. Typical Application  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
C2000 is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2011, Texas Instruments Incorporated  
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
ORDERING INFORMATION(1)  
(2)  
PRODUCT  
VOUT  
TPS732xx yy yz  
XX is nominal output voltage (for example, 25 = 2.5V, 01 = Adjustable(3)).  
YYY is package designator.  
Z is package quantity.  
(1) For the most current specification and package information, refer to the Package Option Addendum located at the end of this datasheet  
or see the TI website at www.ti.com.  
(2) Most output voltages of 1.25V and 1.3V to 5.0V in 100mV increments are available through the use of innovative factory EEPROM  
programming; minimum order quantities may apply. Contact factory for details and availability.  
(3) For fixed 1.20V operation, tie FB to OUT.  
ABSOLUTE MAXIMUM RATINGS  
Over operating junction temperature range unless otherwise noted.(1)  
PARAMETER  
TPS73219  
0.3 to 6.0  
UNIT  
VIN range  
V
V
V
V
VEN range  
0.3 to 6.0  
VOUT range  
0.3 to 5.5  
VNR, VFB range  
0.3 to 6.0  
Peak output current  
Output short-circuit duration  
Continuous total power dissipation  
Junction temperature range, TJ  
Storage temperature range  
ESD rating, HBM  
Internally limited  
Indefinite  
See Thermal Information Table  
55 to +150  
65 to +150  
2
°C  
°C  
kV  
V
ESD rating, CDM  
500  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics  
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.  
2
Copyright © 2011, Texas Instruments Incorporated  
TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
THERMAL INFORMATION  
TPS73219(3)  
DBV  
5 PINS  
180  
THERMAL METRIC(1)(2)  
UNITS  
θJA  
Junction-to-ambient thermal resistance(4)  
Junction-to-case (top) thermal resistance(5)  
Junction-to-board thermal resistance(6)  
θJCtop  
θJB  
64  
35  
°C/W  
ψJT  
Junction-to-top characterization parameter(7)  
Junction-to-board characterization parameter(8)  
Junction-to-case (bottom) thermal resistance(9)  
N/A  
ψJB  
N/A  
θJCbot  
N/A  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A.  
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.  
(3) Thermal data for the DRB, DCQ, and DRV packages are derived by thermal simulations based on JEDEC-standard methodology as  
specified in the JESD51 series. The following assumptions are used in the simulations:  
(a) There is no exposed pad with the DBV package.  
(b) The top and bottom copper layers are assumed to have a 20% thermal conductivity of copper representing a 20% copper coverage.  
(c) These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To  
understand the effects of the copper area on thermal performance, see the Power Dissipation section of this data sheet.  
(4) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as  
specified in JESD51-7, in an environment described in JESD51-2a.  
(5) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the top of the package. No specific  
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
(6) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB  
temperature, as described in JESD51-8.  
(7) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7).  
(8) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted  
from the simulation data to obtain θJA using a procedure described in JESD51-2a (sections 6 and 7).  
(9) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific  
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.  
Copyright © 2011, Texas Instruments Incorporated  
3
 
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
ELECTRICAL CHARACTERISTICS  
Over operating temperature range (TJ = 40°C to +125°C), VIN = 2.4V, IOUT = 10mA, VEN = 1.7V, and  
COUT = 0.1μF, unless otherwise noted. Typical values are at TJ = 25°C.  
PARAMETER  
TEST CONDITIONS  
MIN  
2.05  
0.5  
TYP  
MAX UNIT  
VIN  
Input voltage range  
5.5  
V
Nominal  
TJ = +25°C  
+0.5  
VOUT  
Accuracy  
%
VOUT + 0.5V VIN 5.5V;  
10 mA IOUT 250mA  
VIN, IOUT, and T  
1.0  
±0.5  
+1.0  
ΔVOUT%/ΔVIN  
Line regulation  
VOUT(nom) + 0.5V VIN 5.5V  
1mA IOUT 250mA  
0.01  
0.002  
%/V  
ΔVOUT%/ΔIOUT Load regulation  
%/mA  
10mA IOUT 250mA  
0.0005  
Dropout voltage  
VDO  
IOUT = 250mA  
40  
150  
600  
mV  
(VIN = VOUT (nom) 0.1V)  
ZO(DO)  
ICL  
Output impedance in dropout  
1.7 V VIN VOUT + VDO  
VOUT = 0.9 × VOUT(nom)  
VOUT = 0V  
0.25  
425  
300  
0.1  
Output current limit  
250  
mA  
mA  
μA  
ISC  
Short-circuit current  
IREV  
Reverse leakage current(1) (IIN  
)
VEN 0.5V, 0V VIN VOUT  
10  
550  
950  
IOUT = 10mA (IQ)  
IOUT = 250mA  
400  
650  
IGND  
GND pin current  
μA  
µA  
dB  
VEN 0.5V, VOUT VIN 5.5,  
ISHDN  
PSRR  
Shutdown current (IGND  
)
0.02  
1
40°C TJ +100°C  
f = 100Hz, IOUT = 250 mA  
f = 10kHz, IOUT = 250 mA  
COUT = 10μF, No CNR  
58  
37  
Power-supply rejection ratio  
(ripple rejection)  
27 × VOUT  
8.5 × VOUT  
Output noise voltage  
BW = 10Hz 100kHz  
VN  
μVRMS  
μs  
COUT = 10μF, CNR = 0.01μF  
VOUT = 3V, RL = 30Ω  
COUT = 1 μF, CNR = 0.01 μF  
tSTR  
Startup time  
600  
VEN(HI)  
VEN(LO)  
IEN(HI)  
EN pin high (enabled)  
EN pin low (shutdown)  
EN pin current (enabled)  
1.7  
0
VIN  
0.5  
0.1  
V
V
VEN = 5.5V  
0.02  
+160  
+140  
μA  
Shutdown  
Reset  
Temp increasing  
Temp decreasing  
TSD  
TJ  
Thermal shutdown temperature  
Operating junction temperature  
°C  
°C  
40  
+125  
(1) Fixed-voltage versions only; refer to Applications section for more information.  
4
Copyright © 2011, Texas Instruments Incorporated  
TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
FUNCTIONAL BLOCK DIAGRAM  
IN  
4MHz  
Charge Pump  
EN  
Thermal  
Protection  
Ref  
Servo  
27k  
Bandgap  
Error  
Amp  
Current  
Limit  
OUT  
8k  
GND  
R1  
R2  
R1 + R2 = 80k  
NR  
Figure 2. Fixed Voltage Version  
Copyright © 2011, Texas Instruments Incorporated  
5
 
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
PIN CONFIGURATION  
DBV PACKAGE  
SOT23  
(TOP VIEW)  
1
2
3
IN  
GND  
EN  
5
4
OUT  
NR/FB  
PIN DESCRIPTIONS  
SOT23  
(DBV)  
NAME  
IN  
PIN NO.  
DESCRIPTION  
1
2
Input supply  
Ground  
GND  
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator into  
shutdown mode. Refer to the Shutdown section under Applications Information for more details. EN  
can be connected to IN if not used.  
EN  
NR  
3
4
Fixed voltage versions onlyconnecting an external capacitor to this pin bypasses noise generated by  
the internal bandgap, reducing output noise to very low levels.  
Adjustable voltage version onlythis is the input to the control loop error amplifier, and is used to set  
the output voltage of the device.  
FB  
4
5
OUT  
Output of the Regulator. There are no output capacitor requirements for stability.  
6
Copyright © 2011, Texas Instruments Incorporated  
TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
TYPICAL CHARACTERISTICS  
For all voltage versions at TJ = 25°C, VIN = 2.4V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted.  
LOAD REGULATION  
LINE REGULATION  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.20  
0.15  
0.10  
0.05  
0
Referred to IOUT = 10mA  
Referred to VIN = VOUT + 0.5V at IOUT = 10mA  
_
40  
C
_
+25 C  
_
+25  
C
_
_
+125  
C
+125 C  
0.1  
0.2  
0.3  
0.4  
0.5  
0.05  
0.10  
0.15  
0.20  
_
40  
C
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
0
50  
100  
150  
200  
250  
IOUT (mA)  
VIN VOUT (V)  
Figure 3.  
Figure 4.  
DROPOUT VOLTAGE vs OUTPUT CURRENT  
DROPOUT VOLTAGE vs TEMPERATURE  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
TPS73225DBV  
IOUT = 250mA  
TPS73225DBV  
_
+125  
C
_
+25  
C
_
40 C  
25  
50  
0
25  
50  
75  
100  
125  
0
50  
100  
150  
200  
250  
_
Temperature ( C)  
IOUT (mA)  
Figure 5.  
Figure 6.  
OUTPUT VOLTAGE ACCURACY HISTOGRAM  
OUTPUT VOLTAGE DRIFT HISTOGRAM  
30  
18  
16  
14  
12  
10  
8
IOUT = 10mA  
All Voltage Versions  
IOUT = 10mA  
25  
20  
15  
10  
5
6
4
2
0
0
_
VOUT Error (%)  
Worst Case dVOUT/dT (ppm/ C)  
Figure 7.  
Figure 8.  
Copyright © 2011, Texas Instruments Incorporated  
7
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = 25°C, VIN = 2.4V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted.  
GROUND PIN CURRENT vs OUTPUT CURRENT  
GROUND PIN CURRENT vs TEMPERATURE  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
700  
600  
500  
400  
300  
200  
100  
0
IOUT = 250mA  
VIN = 5.5V  
VIN = 4V  
VIN = 2V  
VIN = 5.5V  
VIN = 4V  
VIN = 2V  
25  
0
50  
100  
150  
200  
250  
50  
0
25  
50  
75  
100  
125  
_
IOUT (mA)  
Temperature ( C)  
Figure 9.  
Figure 10.  
GROUND PIN CURRENT IN SHUTDOWN  
vs TEMPERATURE  
CURRENT LIMIT vs VOUT (FOLDBACK)  
1
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
VENABLE = 0.5V  
VIN = VOUT + 0.5V  
ICL  
ISC  
0.1  
TPS73233  
0.01  
0
-0.5  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
25  
50  
0
25  
50  
75  
100  
125  
Output Voltage (V)  
_
Temperature ( C)  
Figure 11.  
Figure 12.  
CURRENT LIMIT vs VIN  
CURRENT LIMIT vs TEMPERATURE  
600  
550  
500  
450  
400  
350  
300  
250  
600  
550  
500  
450  
400  
350  
300  
250  
25  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
50  
0
25  
50  
75  
100  
125  
_
VIN (V)  
Temperature ( C)  
Figure 13.  
Figure 14.  
8
Copyright © 2011, Texas Instruments Incorporated  
 
TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = 25°C, VIN = 2.4V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted.  
PSRR (RIPPLE REJECTION) vs FREQUENCY  
PSRR (RIPPLE REJECTION) vs VIN - VOUT  
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
IOUT = 100mA  
COUT = Any  
IOUT = 1mA  
µ
COUT = 1  
F
IOUT = 1mA  
COUT = 10 F  
µ
IO = 100mA  
µ
CO = 1 F  
IOUT = 1mA  
COUT = Any  
Frequency = 10kHz  
COUT = 10mF  
IOUT = 100mA  
COUT = 10  
µ
F
VOUT = 2.5V  
IOUT = Any  
VIN = VOUT + 1V  
µ
COUT = 0  
F
IOUT = 100mA  
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
10  
100  
1k  
10k  
100k  
1M  
10M  
VIN - VOUT (V)  
Frequency (Hz)  
Figure 15.  
Figure 16.  
NOISE SPECTRAL DENSITY  
NOISE SPECTRAL DENSITY  
CNR = 0µF  
CNR = 0.01µF  
1
1
µ
COUT = 1  
F
µ
COUT = 1  
F
µ
COUT = 0  
F
0.1  
0.1  
µ
COUT = 10 F  
µ
COUT = 0  
F
µ
COUT = 10  
F
IOUT = 150mA  
IOUT = 150mA  
10 100  
0.01  
0.01  
10  
100  
1k  
10k  
100k  
1k  
10k  
100k  
Frequency (Hz)  
Frequency (Hz)  
Figure 17.  
Figure 18.  
RMS NOISE VOLTAGE vs COUT  
RMS NOISE VOLTAGE vs CNR  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
VOUT = 5.0V  
VOUT = 5.0V  
VOUT = 3.3V  
VOUT = 1.5V  
VOUT = 3.3V  
VOUT = 1.5V  
60  
40  
20  
µ
CNR = 0.01  
F
µ
COUT = 0  
F
10Hz < Frequency < 100kHz  
10Hz < Frequency < 100kHz  
0
0.1  
1
10  
1p 10p 100p  
1n  
10n  
µ
COUT ( F)  
CNR (F)  
Figure 19.  
Figure 20.  
Copyright © 2011, Texas Instruments Incorporated  
9
 
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = 25°C, VIN = 2.4V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted.  
TPS73233  
TPS73233  
LOAD TRANSIENT RESPONSE  
LINE TRANSIENT RESPONSE  
µ
µ
µ
VIN = 3.8V  
COUT = 0  
F
F
F
IOUT = 250mA  
50mV/tick  
50mV/tick  
VOUT  
VOUT  
VOUT  
µ
COUT = 0  
F
50mV/div  
VOUT  
COUT = 1  
µ
COUT = 100  
F
COUT = 10  
50mV/div  
1V/div  
VOUT  
50mV/tick  
50mA/tick  
dVIN  
dt  
5.5V  
µ
= 0.5V/  
s
250mA  
4.5V  
VIN  
10mA  
IOUT  
µ
µ
10 s/div  
10 s/div  
Figure 21.  
Figure 22.  
TPS73233  
TPS73233  
TURN-ON RESPONSE  
TURN-OFF RESPONSE  
RL = 1k  
RL = 20  
VOUT  
µ
COUT = 0  
F
COUT = 10µF  
RL = 20  
COUT = 1µF  
RL = 20Ω  
1V/div  
1V/div  
1V/div  
1V/div  
µ
COUT = 1  
F
RL = 1k  
RL = 20Ω  
COUT = 10  
µ
COUT = 0  
F
µ
F
VOUT  
2V  
2V  
VEN  
0V  
0V  
VEN  
µ
100 s/div  
µ
100 s/div  
Figure 23.  
Figure 24.  
TPS73233  
POWER UP / POWER DOWN  
IENABLE vs TEMPERATURE  
10  
1
6
5
4
3
2
1
0
VIN  
VOUT  
0.1  
1
2
0.01  
50ms/div  
25  
50  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Figure 25.  
Figure 26.  
10  
Copyright © 2011, Texas Instruments Incorporated  
 
TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
TYPICAL CHARACTERISTICS (continued)  
For all voltage versions at TJ = 25°C, VIN = 2.4V, IOUT = 10mA, VEN = 1.7V, and COUT = 0.1μF, unless otherwise noted.  
TPS73201  
TPS73201  
RMS NOISE VOLTAGE vs CFB  
IFB vs TEMPERATURE  
60  
55  
50  
45  
40  
35  
30  
25  
20  
160  
140  
120  
100  
80  
60  
VOUT = 2.5V  
40  
µ
COUT = 0  
F
R1 = 39.2k  
20  
10Hz < Frequency < 100kHz  
0
10p  
100p  
1n  
10n  
25  
50  
0
25  
50  
75  
100  
125  
CFB (F)  
_
Temperature ( C)  
Figure 27.  
Figure 28.  
TPS73201  
TPS73201  
LOAD TRANSIENT, ADJUSTABLE VERSION  
LINE TRANSIENT, ADJUSTABLE VERSION  
CFB = 10nF  
VOUT = 2.5V  
CFB = 10nF  
R1 = 39.2k  
µ
COUT = 0  
F
µ
COUT = 0  
F
VOUT  
VOUT  
100mV/div  
100mV/div  
100mV/div  
100mV/div  
µ
COUT = 10 F  
µ
COUT = 10  
F
VOUT  
VOUT  
4.5V  
250mA  
3.5V  
VIN  
10mA  
IOUT  
µ
5
s/div  
µ
10 s/div  
Figure 29.  
Figure 30.  
Copyright © 2011, Texas Instruments Incorporated  
11  
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
APPLICATION INFORMATION  
types and values of capacitors. In applications where  
multiple low ESR capacitors are in parallel, ringing  
may occur when the product of COUT and total ESR  
drops below 50nF. Total ESR includes all parasitic  
resistances, including capacitor ESR and board,  
socket, and solder joint resistance. In most  
applications, the sum of capacitor ESR and trace  
resistance will meet this requirement.  
The TPS73219 belongs to a family of new generation  
LDO regulators that use an NMOS pass transistor to  
achieve ultra-low-dropout performance, reverse  
current blockage, and freedom from output capacitor  
constraints. These features, combined with low noise  
and an enable input, make the TPS73219 ideal for  
portable applications. This regulator family offers a  
wide selection of fixed output voltage versions and an  
adjustable output version. All versions have thermal  
and over-current protection, including foldback  
current limit.  
OUTPUT NOISE  
A precision band-gap reference is used to generate  
the internal reference voltage, VREF. This reference is  
the dominant noise source within the TPS73219 and  
it generates approximately 32µVRMS (10Hz to  
100kHz) at the reference output (NR). The regulator  
control loop gains up the reference noise with the  
same gain as the reference voltage, so that the noise  
voltage of the regulator is approximately given by:  
Figure 31 shows the basic circuit connections for the  
fixed voltage models.  
Optional input capacitor.  
May improve source  
Optional output capacitor.  
May improve load transient,  
noise, or PSRR.  
impedance, noise, or PSRR.  
VIN  
VOUT  
IN  
OUT  
TPS732xx  
VOUT  
VREF  
(R1 ) R2)  
VN + 32mVRMS  
 
+ 32mVRMS  
 
R2  
(1)  
EN  
GND  
NR  
Since the value of VREF is 1.2V, this relationship  
reduces to:  
ON  
OFF  
Optional bypass  
mVRMS  
V
capacitor to reduce  
output noise.  
ǒ Ǔ  
VN(mVRMS) + 27  
  VOUT(V)  
(2)  
for the case of no CNR  
.
Figure 31. Typical Application Circuit for  
Fixed-Voltage Versions  
An internal 27kresistor in series with the noise  
reduction pin (NR) forms a low-pass filter for the  
voltage reference when an external noise reduction  
capacitor, CNR, is connected from NR to ground. For  
CNR = 10nF, the total noise in the 10Hz to 100kHz  
bandwidth is reduced by a factor of ~3.2, giving the  
approximate relationship:  
For best accuracy, make the parallel combination of  
R1 and R2 approximately equal to 19k. This 19k,  
in addition to the internal 8kresistor, presents the  
same impedance to the error amp as the 27kΩ  
bandgap reference output. This impedance helps  
compensate for leakages into the error amp  
terminals.  
mVRMS  
V
ǒ Ǔ  
VN(mVRMS) + 8.5  
  VOUT(V)  
(3)  
INPUT AND OUTPUT CAPACITOR  
REQUIREMENTS  
for CNR = 10nF.  
This noise reduction effect is shown as RMS Noise  
Voltage vs CNR (Figure 20) in the Typical  
Characteristics section.  
Although an input capacitor is not required for  
stability, it is good analog design practice to connect  
a 0.1μF to 1μF low ESR capacitor across the input  
supply near the regulator. This counteracts reactive  
input sources and improves transient response, noise  
The TPS73219 uses an internal charge pump to  
develop an internal supply voltage sufficient to drive  
the gate of the NMOS pass element above VOUT. The  
charge pump generates ~250μV of switching noise at  
~4MHz; however, charge-pump noise contribution is  
negligible at the output of the regulator for most  
rejection, and ripple rejection.  
A
higher-value  
capacitor may be necessary if large, fast rise-time  
load transients are anticipated or the device is  
located several inches from the power source.  
values of IOUT and COUT  
.
The TPS73219 does not require an output capacitor  
for stability and has maximum phase margin with no  
capacitor. It is designed to be stable for all available  
12  
Copyright © 2011, Texas Instruments Incorporated  
 
TPS73219  
www.ti.com  
SBVS166 JUNE 2011  
BOARD LAYOUT RECOMMENDATION TO  
IMPROVE PSRR AND NOISE PERFORMANCE  
time after VIN has been removed. This scenario can  
result in reverse current flow (if the IN pin is low  
impedance) and faster ramp times upon power-up. In  
addition, for VIN ramp times slower than a few  
milliseconds, the output may overshoot upon  
power-up.  
To improve ac performance such as PSRR, output  
noise, and transient response, it is recommended that  
the PCB be designed with separate ground planes for  
VIN and VOUT, with each ground plane connected only  
at the GND pin of the device. In addition, the ground  
connection for the bypass capacitor should connect  
directly to the GND pin of the device.  
Note that current limit foldback can prevent device  
start-up under some conditions. See the Internal  
Current Limit section.  
INTERNAL CURRENT LIMIT  
DROPOUT VOLTAGE  
The TPS73219 internal current limit helps protect the  
regulator during fault conditions. Foldback current  
limit helps to protect the regulator from damage  
during output short-circuit conditions by reducing  
current limit when VOUT drops below 0.5V. See  
Figure 12 in the Typical Characteristics section for a  
The TPS73219 uses an NMOS pass transistor to  
achieve extremely low dropout. When (VIN VOUT) is  
less than the dropout voltage (VDO), the NMOS pass  
device is in its linear region of operation and the  
input-to-output resistance is the RDS-ON of the NMOS  
pass element.  
graph of IOUT vs VOUT  
.
For large step changes in load current, the TPS73219  
requires a larger voltage drop from VIN to VOUT to  
avoid degraded transient response. The boundary of  
this transient dropout region is approximately twice  
the dc dropout. Values of VIN VOUT above this line  
insure normal transient response.  
Note from Figure 12 that approximately 0.2V of VOUT  
results in a current limit of 0mA. Therefore, if OUT is  
forced below 0.2V before EN goes high, the device  
may not start up. In applications that work with both a  
positive and negative voltage supply, the TPS73219  
should be enabled first.  
Operating in the transient dropout region can cause  
an increase in recovery time. The time required to  
recover from a load transient is a function of the  
magnitude of the change in load current rate, the rate  
of change in load current, and the available  
headroom (VIN to VOUT voltage drop). Under  
worst-case conditions [full-scale instantaneous load  
change with (VIN VOUT) close to dc dropout levels],  
ENABLE PIN AND SHUTDOWN  
The enable pin (EN) is active high and is compatible  
with standard TTL-CMOS levels. A VEN below 0.5V  
(max) turns the regulator off and drops the GND pin  
current to approximately 10nA. When EN is used to  
shutdown the regulator, all charge is removed from  
the pass transistor gate, and the output ramps back  
up to a regulated VOUT (see Figure 23).  
the TPS73219 can take  
a couple of hundred  
microseconds to return to the specified regulation  
accuracy.  
When shutdown capability is not required, EN can be  
connected to VIN. However, the pass gate may not be  
discharged using this configuration, and the pass  
transistor may be left on (enhanced) for a significant  
Copyright © 2011, Texas Instruments Incorporated  
13  
 
TPS73219  
SBVS166 JUNE 2011  
www.ti.com  
TRANSIENT RESPONSE  
Any tendency to activate the thermal protection circuit  
indicates excessive power dissipation or an  
inadequate heatsink. For reliable operation, junction  
temperature should be limited to +125°C maximum.  
To estimate the margin of safety in a complete design  
The low open-loop output impedance provided by the  
NMOS pass element in  
a
voltage follower  
configuration allows operation without an output  
capacitor for many applications. As with any  
regulator, the addition of a capacitor (nominal value  
1μF) from the OUT pin to ground will reduce  
undershoot magnitude but increase its duration. In  
the adjustable version, the addition of a capacitor,  
CFB, from the OUT pin to the FB pin will also improve  
the transient response.  
(including  
heatsink),  
increase  
the  
ambient  
temperature until the thermal protection is triggered;  
use worst-case loads and signal conditions. For good  
reliability, thermal protection should trigger at least  
+35°C above the maximum expected ambient  
condition of your application. This produces  
worst-case junction temperature of +125°C at the  
highest expected ambient temperature and  
worst-case load.  
a
The TPS73219 does not have active pull-down when  
the output is over-voltage. This allows applications  
that connect higher voltage sources, such as  
alternate power supplies, to the output. This also  
results in an output overshoot of several percent if the  
load current quickly drops to zero when a capacitor is  
connected to the output. The duration of overshoot  
can be reduced by adding a load resistor. The  
overshoot decays at a rate determined by output  
capacitor COUT and the internal/external load  
resistance. The rate of decay is given by:  
The internal protection circuitry of the TPS73219 has  
been designed to protect against overload conditions.  
It was not intended to replace proper heatsinking.  
Continuously running the TPS73219 into thermal  
shutdown will degrade device reliability.  
POWER DISSIPATION  
The ability to remove heat from the die is different for  
each  
package  
type,  
presenting  
different  
(Fixed voltage version)  
considerations in the PCB layout. The PCB area  
around the device that is free of other components  
moves the heat from the device to the ambient air.  
Performance data for JEDEC low- and high-K boards  
are shown in the Thermal Information table. Using  
heavier copper will increase the effectiveness in  
removing heat from the device. The addition of plated  
through-holes to heat-dissipating layers will also  
improve the heat-sink effectiveness.  
VOUT  
dVńdt +  
COUT   80kW ø RLOAD  
(4)  
REVERSE CURRENT  
The NMOS pass element of the TPS73219 provides  
inherent protection against current flow from the  
output of the regulator to the input when the gate of  
the pass device is pulled low. To ensure that all  
charge is removed from the gate of the pass element,  
the EN pin must be driven low before the input  
voltage is removed. If this is not done, the pass  
element may be left on due to stored charge on the  
gate.  
Power dissipation depends on input voltage and load  
conditions. Power dissipation (PD) is equal to the  
product of the output current times the voltage drop  
across the output pass element (VIN to VOUT):  
PD + (VIN * VOUT)   IOUT  
(5)  
Power dissipation can be minimized by using the  
lowest possible input voltage necessary to assure the  
required output voltage.  
After the EN pin is driven low, no bias voltage is  
needed on any pin for reverse current blocking. Note  
that reverse current is specified as the current flowing  
out of the IN pin due to voltage applied on the OUT  
pin. There will be additional current flowing into the  
OUT pin due to the 80kinternal resistor divider to  
ground (see Figure 2).  
PACKAGE MOUNTING  
Solder pad footprint recommendations for the  
TPS73219 are presented in Application Bulletin  
Solder Pad Recommendations for Surface-Mount  
Devices (SBFA015), available from the Texas  
Instruments web site at www.ti.com.  
THERMAL PROTECTION  
Thermal protection disables the output when the  
junction temperature rises to approximately +160°C,  
allowing the device to cool. When the junction  
temperature cools to approximately +140°C, the  
output circuitry is again enabled. Depending on power  
dissipation, thermal resistance, and ambient  
temperature, the thermal protection circuit may cycle  
on and off. This limits the dissipation of the regulator,  
protecting it from damage due to overheating.  
14  
Copyright © 2011, Texas Instruments Incorporated  
PACKAGE OPTION ADDENDUM  
www.ti.com  
7-Apr-2011  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
TPS73219DBVR  
TPS73219DBVRG4  
TPS73219DBVT  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
DBV  
DBV  
DBV  
DBV  
5
5
5
5
3000  
3000  
250  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
CU NIPDAU Level-1-260C-UNLIM  
Green (RoHS  
& no Sb/Br)  
TPS73219DBVTG4  
250  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
29-Jul-2011  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TPS73219DBVR  
TPS73219DBVT  
SOT-23  
SOT-23  
DBV  
DBV  
5
5
3000  
250  
178.0  
178.0  
9.0  
9.0  
3.23  
3.23  
3.17  
3.17  
1.37  
1.37  
4.0  
4.0  
8.0  
8.0  
Q3  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
29-Jul-2011  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TPS73219DBVR  
TPS73219DBVT  
SOT-23  
SOT-23  
DBV  
DBV  
5
5
3000  
250  
180.0  
180.0  
180.0  
180.0  
18.0  
18.0  
Pack Materials-Page 2  
IMPORTANT NOTICE  
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