TRF370333 [TI]
0.35-GHz TO 4-GHz QUADRATURE MODULATORS;
| 型号： | TRF370333 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 0.35-GHz TO 4-GHz QUADRATURE MODULATORS |
| 文件： | 总25页 (文件大小：746K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TRF3703
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SLWS184D–MARCH 2006–REVISED JUNE 2007
0.4-GHz TO 4-GHz QUADRATURE MODULATOR
FEATURES
APPLICATIONS
•
Cellular Base Transceiver Station Transmit
Channel
•
75-dBc Single-Carrier WCDMA ACPR at
–11-dBm Channel Power
•
•
•
•
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
TDMA: GSM, IS-136, EDGE/UWC-136
Wireless Local Loop
•
•
•
•
•
Very Low Noise Floor: –163 dBm/Hz
OPI3 of 23 dBm
P1dB of 9 dBm
Wireless MAN Wideband Transceivers
Unadjusted Carrier Feedthrough of –40 dBm
RGE PACKAGE
(TOP VIEW)
Unadjusted Side-Band Suppression of –40
dBc
•
•
•
Single Supply: 4.5 V–5.5 V Operation
Silicon Germanium Technology
TRF370333 With 3.3-V CM at I, Q Baseband
Inputs
•
TRF370315 With 1.5-V CM at I, Q Baseband
Inputs
1
2
3
4
5
6
18
17
16
15
14
13
NC
VCC
GND
RF_OUT
NC
GND
LOP
LON
GND
NC
GND
NC
P0024-04
DESCRIPTION
The TRF3703 is a very low-noise direct quadrature modulator, capable of converting complex modulated signals
from baseband or IF directly up to RF. The TRF3703 is ideal for high-performance direct RF modulation from
400 MHz up to 4 GHz. The modulator is implemented as a double-balanced mixer. The RF output block consists
of a differential to single-ended converter and an RF amplifier capable of driving a single-ended 50-Ω load
without any need of external components. The TRF3703 comes in two types, TRF370333 and TRF370315. The
TRF370333 and TRF370315 devices have different common-mode voltage ratings at the I, Q baseband inputs.
The TRF370333 requires a 3.3-V common-mode voltage, and the TRF370315 requires a 1.5-V common-mode
voltage.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2006–2007, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TRF3703
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SLWS184D–MARCH 2006–REVISED JUNE 2007
Functional Block Diagram
NC
GND
LOP
LON
GND
NC
1
2
3
4
5
6
18
17
16
15
14
13
VCC
GND
RF_OUT
NC
S
0/90
GND
NC
B0175-01
NOTE: NC = No connection
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SLWS184D–MARCH 2006–REVISED JUNE 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NAME
BBIN
NO.
22
21
9
I
I
I
I
In-phase input
BBIP
In-phase input
BBQN
BBQP
In-quadrature input
In-quadrature input
10
2, 5, 8,11,
12, 14, 17,
19, 20, 23
GND
–
Ground
LON
LOP
4
3
I
I
Local oscillator input
Local oscillator input
1, 6, 7, 13,
15
NC
–
No connect
RF_OUT
VCC
16
O
–
RF output
18, 24
Power supply
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
VALUE(2)
–0.3 V to 6
UNIT
V
Supply voltage range
Digital I/O voltage range
–0.3 V to VI + 0.3
–40 to 150
V
TJ
Operating virtual junction temperature range
Operating ambient temperature range
Storage temperature range
°C
°C
°C
TA
–40 to 85
Tstg
–65 to 150
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCC
Power-supply voltage
4.5
5
5.5
V
THERMAL CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUE
UNIT
RθJA
RθJC
Thermal resistance, junction-to-ambient High-K board, still air
Thermal resistance, junction-to-case
64.33
49.3
°C/W
°C/W
3
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SLWS184D–MARCH 2006–REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
DC Parameters
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Total supply current (1.5 V CM)
Total supply current (3.3 V CM)
TA = 25°C
TA = 25°C
195
210
205
235
ICC
mA
LO Input (50-Ω, Single-Ended)
LO frequency range
0.4
–5
4
GHz
dBm
dB
fLO
LO input power
0
12
LO port return loss
15
Baseband Inputs
TRF370333
TRF370315
3.3
1.5
VCM
BW
I and Q input dc common voltage
V
1-dB input frequency bandwidth
Input impedance, resistance
350
MHz
10
3
kΩ
TRF370333
TRF370315
Input impedance, parallel
capacitance
pF
kΩ
pF
ZI(single
ended)
Input impedance, resistance
5
Input impedance, parallel
capacitance
3
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 400 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–2.3
9.4
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
20
23
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
62
Carrier feedthrough
Sideband suppression
–37
–39
Unadjusted
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SLWS184D–MARCH 2006–REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 900 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–4.1
9
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
dB
20
23
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
63
Carrier feedthrough
Sideband suppression
Output return loss
–37
Unadjusted
–42
9
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
1 EDGE signal, Pout = –5 dBm
–160.4
–156.6
–158.5
0.59%
0.63%
Output noise floor
dBm/Hz
1 EDGE signal, Pout = 0 dBm
EVM
Error vector magnitude (rms)
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15 dBm, 3rd harmonic of LO = –33 dBm(1)
1%
(1) The second- and third-harmonic tests were made independently at each frequency.
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 1800 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–4.4
9.5
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
dB
20
23
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
55
Carrier feedthrough
Sideband suppression
Output return loss
–40
Unadjusted
–47
8
DC only to BB inputs, 13 MHz offset from fLO
1.8-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
6-MHz offset from fLO; 1 CW tone; Pout = 0 dBm
1 EDGE signal, Pout = –5 dBm
–162.6
–160
–159.4
0.66%
0.74%
Output noise floor
dBm/Hz
1 EDGE signal, Pout = 0 dBm
EVM
Error vector magnitude (rms)
1 EDGE signal, Pout = 0 dBm, 2nd harmonic of LO
= –15.5 dBm, 3rd harmonic of LO = –30 dBm(1)
1%
(1) The second- and third-harmonic tests were made independently at each frequency.
5
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SLWS184D–MARCH 2006–REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2140 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–4.5
9.5
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
dB
18
21
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
58
Carrier feedthrough
Sideband suppression
Output return loss
–40
–47
8.5
Unadjusted
20-MHz offset from fLO; dc only to BB inputs
–163
Output noise floor
dBm/Hz
dBc
20-MHz offset from fLO; 1 WCDMA signal;
Pin = –20.5 dBVrms (I and Q input)
–162
1 WCDMA signal; Pout = –13 dBm
–75.8
–72
Adjacent-channel power
ratio
ACPR
1 WCDMA signal; Pout = –9 dBm
4 WCDMA signals; Pout = –23 dBm per carrier
1 WCDMA signal; Pout = –13 dBm
–68
–79
Alternate-channel power
ratio
1 WCDMA signal; Pout = –9 dBm
–80.5
–69
dBc
4 WCDMA signals; Pout = –23 dBm per carrier
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 2500 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–4.4
9.5
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
18
21
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
63
Carrier feedthrough
Sideband suppression
–38
–47
Unadjusted
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 3600 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–3.5
9.5
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
20
23
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
63
Carrier feedthrough
Sideband suppression
–41
–45
Unadjusted
6
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SLWS184D–MARCH 2006–REVISED JUNE 2007
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, power supply = 5 V, TA = 25°C, fLO = 4000 MHz at 0 dBm (unless otherwise noted)
RF Output Parameters
PARAMETER
Voltage gain
TEST CONDITIONS
MIN
TYP
–4.5
9
MAX
UNIT
dB
G
Output rms voltage over input I (or Q) rms voltage
P1dB
IP3
IP2
Output compression point
Output IP3
dBm
dBm
dBm
dBm
dBc
19
22
Output IP2
Measured at fLO + 2 × fBB
Unadjusted
50
Carrier feedthrough
Sideband suppression
–37
–40
Unadjusted
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SLWS184D–MARCH 2006–REVISED JUNE 2007
TYPICAL CHARACTERISTICS
POUT
vs
POUT
vs
BASEBAND VOLTAGE
FREQUENCY AND TEMPERATURE
0
−1
−2
−3
−4
−5
−6
−7
−8
−9
−10
15
10
–40°C
5
85°C
25°C
0
−5
−10
−15
−20
LO = 0 dB
V
CC
= 5 V
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0.01
0.1
1
V
BB
− Baseband Voltage Single-Ended RMS − V
G023
G010
Figure 1.
Figure 2.
POUT
POUT
vs
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
0
−1
−2
−3
−4
−5
−6
−7
−8
−9
−10
0
−1
−2
−3
−4
−5
−6
−7
5.5 V
0 dBm
5 dBm
5 V
4.5 V
–5 dBm
LO = 0 dB
= 25°C
V
= 5 V
CC
T
A
T = 25°C
A
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G011
G012
Figure 3.
Figure 4.
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SLWS184D–MARCH 2006–REVISED JUNE 2007
TYPICAL CHARACTERISTICS (continued)
P1dB
P1dB
vs
vs
FREQUENCY AND TEMPERATURE
FREQUENCY AND SUPPLY VOLTAGE
14
12
10
8
LO = 0 dB
5.5 V
V
CC
= 5 V
12
10
8
5 V
4.5 V
85°C
6
25°C
–40°C
6
4
4
2
2
LO = 0 dB
T
A
= 25°C
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G001
G002
Figure 5.
Figure 6.
P1dB
OIP3
vs
vs
FREQUENCY AND LO POWER
FREQUENCY AND TEMPERATURE
30
28
26
24
22
20
18
16
14
12
10
12
10
8
–5 dBm
25°C
85°C
5 dBm
0 dBm
6
4
–40°C
2
LO = 0 dBm
V
T
A
= 5 V
= 25°C
CC
V
CC
= 5 V
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G014
G003
Figure 7.
Figure 8.
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SLWS184D–MARCH 2006–REVISED JUNE 2007
TYPICAL CHARACTERISTICS (continued)
OIP3
OIP3
vs
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND LO POWER
30
28
26
24
22
20
18
16
14
12
10
30
28
26
24
22
20
18
16
14
12
10
+5 dBm
5 V
4.5 V
–5 dBm
0 dBm
5.5 V
V
T
= 5 V
= 25°C
LO = 0 dBm
= 25°C
CC
T
A
A
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G015
G013
Figure 9.
Figure 10.
UNADJUSTED SIDEBAND SUPPRESSION
UNADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND SUPPLY VOLTAGE
vs
FREQUENCY AND TEMPERATURE
0
−10
−20
−30
−40
−50
−60
0
−10
−20
−30
−40
−50
−60
LO = 0 dB
LO = 0 dB
P
V
= –3 dBm
= 5 V
P = –3 dBm
OUT
OUT
T
A
= 25°C
CC
5 V
85°C
25°C
5.5 V
–40°C
4.5 V
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G007
G008
Figure 11.
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
UNADJUSTED SIDEBAND SUPPRESSION
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
vs
FREQUENCY AND LO POWER
0
−20
−30
−40
−50
−60
−70
−80
V
P
T
= 5 V
CC
Adj at 942.6 MHz
= –3 dBm
OUT
V
CC
= 5 V
= 25°C
−10
−20
−30
−40
−50
−60
A
–40°C
–5 dBm
0 dBm
25°C
5 dBm
85°C
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
900
920
940
960
980
1000
f − Frequency − MHz
G009
G016
Figure 13.
Figure 14.
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
ADJUSTED SIDEBAND SUPPRESSION
vs
FREQUENCY AND TEMPERATURE
−20
−30
−40
−50
−60
−70
−80
−20
−30
−40
−50
−60
−70
−80
Adj at 1900 MHz
Adj at 2140 MHz
V = 5 V
CC
V
CC
= 5 V
85°C
–40°C
85°C
–40°C
25°C
25°C
2140
1850
1870
1890
1910
1930
1950
2100
2120
2160
2180
2200
f − Frequency − MHz
f − Frequency − MHz
G017
G018
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
NOISE AT 13-MHz OFFSET (dBm/Hz)
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
vs
FREQUENCY AND SUPPLY VOLTAGE
FREQUENCY AND TEMPERATURE
−154
−156
−158
−160
−162
−164
−166
−168
−154
−156
−158
−160
−162
−164
−166
−168
P
= –5 dBm
OUT
LO = +5 dBm
Temp = 25°C
85°C/0 dBm
5.5 V
25°C/0 dBm
5 V
–40°C/0 dBm
4.5 V
P
= 0 dBm
OUT
LO = +5 dBm
= 5 V
V
CC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
f − Frequency − GHz
f − Frequency − GHz
G019
G020
Figure 17.
Figure 18.
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
NOISE AT 13-MHz OFFSET (dBm/Hz)
vs
FREQUENCY AND TEMPERATURE
−154
−156
−158
−160
−162
−164
−166
−168
−154
−156
−158
−160
−162
−164
−166
−168
P
= –10 dBm
OUT
LO = +5 dBm
= 5 V
V
CC
85°C/–5 dBm
25°C/–5 dBm
85°C/–10 dBm
25°C/–10 dBm
–40°C/–5 dBm
P
= –5 dBm
OUT
LO = +5 dBm
= 5 V
–40°C/–10 dBm
V
CC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
f − Frequency − GHz
f − Frequency − GHz
G021
G022
Figure 19.
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
UNADJUSTED CARRIER FEEDTHROUGH
UNADJUSTED CARRIER FEEDTHROUGH
vs
vs
SUPPLY VOLTAGE
FREQUENCY AND TEMPERATURE
0
0
−10
−20
−30
−40
−50
−60
−70
−80
LO = 0 dB
= 25°C
LO = 0 dB
T
V
CC
= 5 V
A
−10
−20
−30
−40
−50
−60
−70
−80
5 V
5.5 V
85°C
4.5 V
25°C
–40°C
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
0
500 1000 1500 2000 2500 3000 3500 4000 4500
f − Frequency − MHz
G025
G026
Figure 21.
Figure 22.
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APPLICATION INFORMATION AND EVALUATION BOARD
Basic Connections
•
•
See Figure 23 for proper connection of the TRF3703 modulator.
Connect a single power supply (4.5 V–5.5 V) to pins 18 and 24. These pins should be decoupled as shown
on pins 4, 5, 6, and 7.
•
•
Connect pins 2, 5, 8, 11, 12, 14, 17, 19, 20, and 23 to GND.
Connect a single-ended LO source of desired frequency to LOP (amplitude between –5 dBm and 12 dBm).
This should be ac-coupled through a 100-pF capacitor.
•
•
•
Terminate the ac-coupled LON with 50 Ω to GND.
Connect a baseband signal to pins 21 = I, 22 = I, 10 = Q, and 9 = Q.
The differential baseband inputs should be set to the proper level, 3.3 V for the TRF370333 or 1.5 V for the
TRF370315.
•
•
RF_OUT, pin 16, can be fed to a spectrum analyzer set to the desired frequency, LO ± baseband signal.
This pin should also be ac-coupled through a 100-pF capacitor.
All NC pins can be left floating.
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APPLICATION INFORMATION AND EVALUATION BOARD (continued)
J3
IN
J4
IP
1
1
SMA_END
SMA_END
W1
2POS_JUMPER
W2
2POS_JUMPER
R2
0
R3
0
C6
+
C5
C7
C4
+
1000 pF
1000 pF
4.7uF
4.7 mF
J1
LOP
C1
1
SMA_END
1
18
17
16
15
14
13
NC
VCCMOD
GND
J7
RF_OUT
100 pF
2
GND
C3
R1
0
3
1
LOP
RF_OUT
NC
SMA_END
U1
TRF3703
4
100 pF
LON
C8
C9
5
J2
LON
GND
GND
0.1 mF
(Note 1)
0.1 mF
(Note 1)
C2
6
NC
NC
1
SMA_END
100 pF
R4
R5
0
0
J5
QN
J6
QP
1
1
SMA_END
SMA_END
S0214-01
(1) Do not install.
Figure 23. TRF3703 EVM Schematic
15
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TRF3703
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SLWS184D–MARCH 2006–REVISED JUNE 2007
APPLICATION INFORMATION AND EVALUATION BOARD (continued)
Figure 24 shows the top view of the TRF3703 EVM board.
GND
+5 V
+5 V
GND
BBIN
BBIP
LOP
RF_OUT
LON
50 W
BBQP
BBQN
K001
Figure 24. TRF3703 EVM Board Layout
Table 1. Bill of Materials for TRF3703 EVM
Value
Footprint
QTY
Part Number
Vendor
Digi-Key Number
REF DES
Not
Installed
Tantalum
3216
2
T491A475K010AS KEMET
399-1561-1-ND
C6, C7
4.7-μF, 10-V,
10% capacitor
1000-pF, 50-V, 603
5% capacitor
2
3
0
ECJ-1VC1H102J
ECJ-1VC1H101J
Panasonic
Panasonic
PCC2151CT-ND
C4, C5
100-pF, 50-V,
5% capacitor
603
PCC101ACVCT-ND C1, C2, C3
Capacitor
603
C8, C9
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SLWS184D–MARCH 2006–REVISED JUNE 2007
APPLICATION INFORMATION AND EVALUATION BOARD (continued)
Table 1. Bill of Materials for TRF3703 EVM (continued)
Value
Footprint
603
QTY
Part Number
Vendor
Digi-Key Number
REF DES
Not
Installed
0-Ω resistor,
1/10-W, 5%
5
1
6
ERJ-3GEY0R00V Panasonic
TI
P0.0GCT-ND
R1, R2, R3,
R4, R5
TRF3703
24-QFN-PP-
4X4MM
U1
SMA connectors SMA_END_
SMALL
16F3627
Newark
142-0711-821
N/A
J1, J2, J3,
J4, J5, J6,
J7
2POS_HEADER 2POS_JUMP
2
HTSW-150-07-L-S SAMTEC
W1, W2
GSM Applications
The TRF3703 is suited for GSM applications because of its high linearity and low noise level over the entire
recommended operating range. It also has excellent EVM performance, which makes it ideal for the stringent
GSM/EDGE applications.
WCDMA Applications
The TRF3703 is also optimized for WCDMA applications where both adjacent-channel power ratio (ACPR) and
noise density are critically important. Using Texas instruments’ DAC568X series of high-performance
digital-to-analog converters as depicted in Figure 25, excellent ACPR levels were measured with one-, two-, and
four-WCDMA carriers. See Electrical Characteristics, fLO = 2140 MHz for exact ACPR values.
16
TRF3703
RF_OUT
I/Q
DAC5687
Modulator
16
CLK1
CLK2
VCXO
TRF3761
PLL
LO Generator
CDCM7005
Clock Gen
Ref Osc
B0176-01
Figure 25. Typical Transmit Setup Block Diagram
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SLWS184D–MARCH 2006–REVISED JUNE 2007
DEFINITION OF SPECIFICATIONS
Unadjusted Carrier Feedthrough
This specification measures the amount by which the local oscillator component is attenuated in the output
spectrum of the modulator relative to the carrier. This further assumes that the baseband inputs delivered to the
pins of the TRF3703 are perfectly matched to have the same dc offset (VCM). This includes all four baseband
inputs: I, I, Q, and Q. This is measured in dBm.
Adjusted (Optimized) Carrier Feedthrough
This differs from the unadjusted suppression number in that the baseband input dc offsets are iteratively
adjusted around their theoretical value of VCM to yield the maximum suppression of the LO component in the
output spectrum. This is measured in dBm.
Unadjusted Sideband Suppression
This specification measures the amount by which the unwanted sideband of the input signal is attenuated in the
output of the modulator, relative to the wanted sideband. This further assumes that the baseband inputs
delivered to the modulator input pins are perfectly matched in amplitude and are exactly 90° out of phase. This
is measured in dBc.
Adjusted (Optimized) Sideband Suppression
This differs from the unadjusted sideband suppression in that the baseband inputs are iteratively adjusted
around their theoretical values to maximize the amount of sideband suppression. This is measured in dBc.
Suppressions Over Temperature
This specification assumes that the user has gone though the optimization process for the suppression in
question, and set the optimal settings for the I, Q inputs. This specification then measures the suppression when
temperature conditions change after the initial calibration is done.
Figure 26 shows a simulated output and illustrates the respective definitions of various terms used in this data
sheet. The graph assumes a baseband input of 50 kHz.
10
P
OUT
0
−10
−20
−30
−40
−50
−60
−70
−80
RD
ND
3
LSB
(dBc)
SBS
(dBc) (dBm)
C
2
USB
(dBc)
LSB
(Undesired)
USB
(Desired)
RD
RD
3
USB
3
LSB
ND
ND
USB
2
LSB
Carrier
2
−200 −150 −100 −50
0
50
100 150 200
f − Frequency Offset − kHz (Relative to Carrier)
G024
Figure 26. Graphical Illustration of Common Terms
18
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PACKAGE OPTION ADDENDUM
www.ti.com
22-Jun-2007
PACKAGING INFORMATION
Orderable Device
TRF370315IRGER
TRF370315IRGET
TRF370333IRGER
TRF370333IRGERG4
TRF370333IRGET
TRF370333IRGETG4
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
QFN
RGE
24
24
24
24
24
24
3000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
QFN
QFN
QFN
QFN
QFN
RGE
RGE
RGE
RGE
RGE
250 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
250 Green (RoHS & CU NIPDAU Level-3-260C-168 HR
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jan-2008
TAPE AND REEL BOX INFORMATION
Device
Package Pins
Site
Reel
Reel
A0 (mm)
B0 (mm)
K0 (mm)
P1
W
Pin1
Diameter Width
(mm) (mm) Quadrant
(mm)
330
330
330
330
(mm)
12
TRF370315IRGER
TRF370315IRGET
TRF370333IRGER
TRF370333IRGET
RGE
RGE
RGE
RGE
24
24
24
24
SITE 60
SITE 60
SITE 60
SITE 60
4.3
4.3
4.3
4.3
4.3
4.3
4.3
4.3
1.5
1.5
1.5
1.5
8
8
8
8
12
12
12
12
Q1
Q1
Q2
Q2
12
12
12
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Jan-2008
Device
Package
Pins
Site
Length (mm) Width (mm) Height (mm)
TRF370315IRGER
TRF370315IRGET
TRF370333IRGER
TRF370333IRGET
RGE
RGE
RGE
RGE
24
24
24
24
SITE 60
SITE 60
SITE 60
SITE 60
342.9
342.9
342.9
342.9
345.9
345.9
345.9
345.9
20.64
20.64
20.64
20.64
Pack Materials-Page 2
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