TRF37A32 [TI]
TRF37x32 Dual Down Converter Mixer With Integrated IF AMP;
| 型号： | TRF37A32 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | TRF37x32 Dual Down Converter Mixer With Integrated IF AMP |
| 文件： | 总36页 (文件大小：1288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TRF37A32, TRF37B32, TRF37C32
SLASE37A –MAY 2014–REVISED DECEMBER 2014
TRF37x32 Dual Down Converter Mixer With Integrated IF AMP
1 Features
3 Description
The TRF37x32 is a wideband dual down converter
1
•
Device Family Supports Wide RF Input Range
mixer with integrated IF amplifier. The device
employs integrated baluns for single ended RF and
LO inputs. The IF amplifier operates from 30 MHz to
600 MHz in an open collector topology to support a
variety of IF frequencies and bandwidths. The
TRF37x32 provides excellent mixer linearity and
noise performance and offers good isolation between
channels for operation with diversity applications. The
device operates with low power dissipation and
further provides an option for a low power mode for
power sensitive applications. Each channel can be
independently powered down with fast response
times to allow operation in time domain duplexed
(TDD) applications.
–
–
–
TRF37A32: 400 - 1700 MHz
TRF37B32: 700 - 2700 MHz
TRF37C32: 1700 - 3800 MHz
•
•
•
•
•
•
•
•
•
•
•
Gain: 10 dB
Noise Figure: 9.5 dB
Input IP3: 30 dBm
500 mW per Channel Power Dissipation
Single Ended RF Input
IF Frequency Range from 30 MHz to 600 MHz
45 dB Isolation between Channels
Low Power Mode Option
Device Information(1)
Independent Power Down Control
Single 3.3V Supply
PART NUMBER
TRF37A32
PACKAGE
BODY SIZE (NOM)
No External Matching Required
TRF37B32
WQFN (32)
5.00mm x 5.00mm
2 Applications
TRF37C32
•
Wireless Infrastructure
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
–
–
–
WCDMA, TD-SCDMA
LTE, TD-LTE
Multicarrier GSM (MC-GSM)
•
•
•
•
Point-to-Point Microwave
Software Defined Radios (SDR)
Radar Receiver
Satellite Communications
IIP3 Performance Across Frequency
4 Simplified Schematic
40
+3.3V
+3.3V
+3.3V
'A32
'B32
38
'C32
36
34
32
30
28
26
24
22
20
VCC_LO
RFINA
VCC
10pF
10pF
IFOUTAP
IFOUTAN
0.047uF
IFOUTBP
IFOUTBN
RFINB
10pF
LO
PD
400
800 1200 1600 2000 2400 2800 3200 3600
RF Frequency (MHz)
REXT
LPM
DD00101
2.6k:
TRF37A/B/C32
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TRF37A32, TRF37B32, TRF37C32
SLASE37A –MAY 2014–REVISED DECEMBER 2014
www.ti.com
Table of Contents
8.1 Overview ................................................................. 22
8.2 Functional Block Diagram ....................................... 22
8.3 Feature Description................................................. 23
8.4 Device Functional Modes........................................ 24
Applications and Implementation ...................... 25
9.1 Application Information............................................ 25
9.2 Typical Application ................................................. 25
1
2
3
4
5
6
7
Features.................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Simplified Schematic............................................. 1
Revision History..................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information.................................................. 5
7.5 Electrical Characteristics, TRF37A32 ....................... 6
7.6 Electrical Characteristics, TRF37B32 ....................... 7
7.7 Electrical Characteristics, TRF37C32 ....................... 8
7.8 Timing Requirements................................................ 9
7.9 Typical Characteristics (TRF37A32) ....................... 10
7.10 Typical Characteristics (TRF37B32) ..................... 14
7.11 Typical Characteristics (TRF37C32)..................... 18
Detailed Description ............................................ 22
9
10 Power Supply Recommendations ..................... 27
10.1 Power Up Sequence ............................................. 27
11 Layout................................................................... 28
11.1 Layout Guidelines ................................................. 28
11.2 Layout Example .................................................... 28
12 Device and Documentation Support ................. 29
12.1 Related Links ........................................................ 29
12.2 Trademarks........................................................... 29
12.3 Electrostatic Discharge Caution............................ 29
12.4 Glossary................................................................ 29
13 Mechanical, Packaging, and Orderable
Information ........................................................... 29
8
5 Revision History
Changes from Original (May 2014) to Revision A
Page
•
•
Added Typical Characteristics, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, and Layout section ...................................................... 1
Replaced the Handling Ratings table with the ESD Ratings table......................................................................................... 5
2
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
6 Pin Configuration and Functions
RTV PACKAGE
(TOP VIEW)
PDA
NC
1
24
RFINA
NC
2
23
NC
GND
3
22
VCC_LO
LO
4
21
TRF37x32
(Top View)
REXT
NC
5
20
NC
GND
6
19
EXPOSED PADDLE ON BOTTOM
OF PACKAGE, PIN 0
RFINB
NC
7
18
PDB
LPM
8
17
Pin Functions
PIN
I/O
DESCRIPTION
NAME
PDA
NO.
1
Digital Input Power down for channel A (1 = PD; 0 or open = powered)
Analog Input RF input for channel A
RFINA
NC
2
3
N/A
Supply
Bias
No connect
VCC_LO
REXT
NC
4
VCC supply for the LO circuitry
External bias resistor
No connect
5
6
N/A
RFINB
PDB
7
Analog Input RF input for channel B
8
Digital Input Power down for channel B (1 = PD; 0 or open = powered)
IFB_BT
VCCB
GND
9
N/A
IF channel B bias control; leave unconnected
Power supply for channel B
Ground
10
11
Supply
Ground
Analog
Output
IFOUTBP
GND
12
13
14
IF out channel B: positive
Ground
Ground
Analog
Output
IFOUTBN
IF out channel B: negative
GND
NC
15
16
17
18
19
20
21
Ground
N/A
Ground
No connect
LPM
NC
Digital Input Low power mode (0 = normal; 1 = low power)
N/A
Ground
N/A
No connect
Ground
GND
NC
No connect
LO
Analog Input Local oscillator (LO) input
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
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Pin Functions (continued)
PIN
I/O
DESCRIPTION
NAME
GND
NC
NO.
22
23
24
25
26
Ground
N/A
Ground
No connect
No connect
No connect
Ground
NC
N/A
NC
N/A
GND
Ground
Analog
Output
IFOUTAN
GND
27
28
29
IF out channel A: negative
Ground
Ground
Analog
Output
IFOUTAP
IF out channel A: positive
GND
30
31
32
Ground
Supply
N/A
Ground
VCCA
IFA_BT
Power supply for channel A
IF channel A bias control; leave unconnected
4
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
–0.3
–40
MAX
3.6
UNIT
V
Input voltage
Storage temperature, TSTG
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
All pins except
XIFOUTAP, IFOUTAN,
IFOUTBP, and IFOUTBN
±2500
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001(1)
Pins XIFOUTAP,
V(ESD)
Electrostatic discharge
V
IFOUTAN, IFOUTBP, and
IFOUTBN
±100
(2)
Charged-device model (CDM), per JEDEC specification JESD22-
C101(3)
±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) High Linearity IFOUT pins are susceptible to low voltage HBM damage.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Operating virtual junction temperature range, TJ
–40
125
°C
7.4 Thermal Information
RTV
THERMAL METRIC(1)
UNIT
32 PINS
32.3
19.8
5.9
RθJA
Junction-to-ambient thermal resistance
RθJCtop
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
0.2
ψJB
5.9
RθJCbot
1.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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TRF37A32, TRF37B32, TRF37C32
SLASE37A –MAY 2014–REVISED DECEMBER 2014
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7.5 Electrical Characteristics, TRF37A32
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC Parameters
VCC
ICC
Supply Voltage
Supply Current
3.15
3.3
280
3.45
V
FLO = 750 MHz
mA
W
Pdiss
Total Power Dissipation
Power Down Current
FLO = 750 MHz
0.92
2
mA
RF Frequency Range
FRF
Frequency Range
400
1700
MHz
RF Specifications
G
Gain
FRF = 950 MHz (LSI)
within any 200 MHz Band
FRF = 950 MHz (LSI)
9.6
0.5
9.6
17
dB
dB
dB
dB
Gvar
Gain Variation over Frequency
SSB Noise Figure
NF
SSB Noise Figure with Blocker
5 dBm blocker signal
Δf > 50 MHz
FRF = 950 MHz (LSI),
Fspacing = 20 MHz
IIP3
Input 3rd Order Intercept Point
Output 3rd Order Intercept Point
26
dBm
dBm
FRF = 950 MHz (LSI),
Fspacing = 20 MHz
OIP3
35.6
OIP2
IP1dB
ZIN
Output 2nd Order Intercept Point
Input 1 dB Compression Point
Input Impedance
FRF = 950 MHz (LSI)
FRF = 950 MHz (LSI)
65
11
50
15
dBm
dBm
Ω
RLi
Input Return Loss
FRF = 800 - 1400 MHz (LSI)
dB
LO Input
PLO
LO Drive Level
–3
0
6
dBm
MHz
Ω
FLO
LO Frequency Range
Input Impedance
Input Return Loss
600
1400
ZIN
50
15
RLi
FRF = 750 - 1150 MHz
dB
Low Power Mode: LPM = 1
ICC
Pdiss
G
Supply Current
Total Power Dissipation
Gain
FLO = 750 MHz
200
0.66
9.2
mA
W
FLO = 750 MHz
FRF = 950 MHz (LSI)
FRF = 950 MHz (LSI)
dB
dB
NF
SSB Noise Figure
9.6
FRF = 950 MHz (LSI),
Fspacing = 20 MHz
IIP3
Input 3rd Order Intercept Point
Input 1 dB Compression Point
26
11
dBm
dBm
IP1dB
FRF = 950 MHz (LSI)
Isolation
Drive RFinA/B
Channel Isolation
IFoutA/B-IFoutB/A
FRF = 950 MHz
50
dB
RF to IF Isolation
LO to RF Leakage
LO to IF Leakage
FRF = 950 MHz
PLO = 0 dBm
PLO = 0 dBm
20
–55
–45
dB
dBm
dBm
Spurious
2x2 Spurious Product
3x3 Spurious Product
2RF - 2LO
3RF - 3LO
65
70
dBc
dBc
IF Output
ZL
Differential Output Impedance Load
Frequency Range
200
3.3
Ω
FIF
1 dB corner frequency
30
600
MHz
Externally supplied DC bias through
RF choke
DC Bias Range
V
6
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
7.6 Electrical Characteristics, TRF37B32
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC Parameters
VCC
ICC
Supply Voltage
Supply Current
3.15
3.3
305
1
3.45
V
FLO = 1750 MHz
mA
W
Pdiss
Total Power Dissipation
Power Down Current
FLO = 1750 MHz
2
mA
RF Frequency Range
FRF
Frequency Range
700
2700
MHz
RF Specifications
G
Gain
FRF = 1950 MHz (LSI)
within any 200 MHz Band
FRF = 1950 MHz (LSI)
10
0.5
dB
dB
dB
dB
Gvar
Gain Variation over Frequency
SSB Noise Figure
9.2
NF
SSB Noise Figure with Blocker
5 dBm blocker signal
15.5
Δf > 50 MHz
FRF = 1950 MHz (LSI),
Fspacing = 20 MHz
IIP3
Input 3rd Order Intercept Point
Output 3rd Order Intercept Point
32
42
dBm
dBm
FRF = 1950 MHz (LSI),
Fspacing = 20 MHz
OIP3
OIP2
IP1dB
ZIN
Output 2nd Order Intercept Point
Input 1 dB Compression Point
Input Impedance
FRF = 1950 MHz (LSI)
FRF = 1950 MHz (LSI)
70
10.8
50
dBm
dBm
Ω
RLi
Input Return Loss
FRF = 1700 - 2700 MHz (LSI)
10
dB
LO Input
PLO
LO Drive Level
–3
0
6
dBm
MHz
Ω
FLO
LO Frequency Range
Input Impedance
Input Return Loss
500
2900
ZIN
50
15
RLi
FRF = 1500 - 2450 MHz
dB
Low Power Mode: LPM = 1
ICC
Pdiss
G
Supply Current
Total Power Dissipation
Gain
FLO = 1750 MHz
220
0.73
9.2
mA
W
FLO = 1750 MHz
FRF = 1950 MHz (LSI)
FRF = 1950 MHz (LSI)
dB
dB
NF
SSB Noise Figure
9.2
FRF = 1950 MHz (LSI),
Fspacing = 20 MHz
IIP3
Input 3rd Order Intercept Point
Input 1 dB Compression Point
23
dBm
dBm
IP1dB
FRF = 1950 MHz (LSI)
10.7
Isolation
Drive RFinA/B
Channel Isolation
IFoutA/B-IFoutB/A
FRF = 1950 MHz
45
dB
RF to IF Isolation
LO to RF Leakage
LO to IF Leakage
FRF = 1950 MHz
PLO = 0 dBm
PLO = 0 dBm
22
–50
–42
dB
dBm
dBm
Spurious
2x2 Spurious Product
3x3 Spurious Product
2RF - 2LO
3RF - 3LO
70
75
dBc
dBc
IF Output
ZL
Differential Output Impedance Load
Frequency Range
200
3.3
Ω
FIF
1 dB corner frequency
30
600
MHz
Externally supplied DC bias through
RF choke
DC Bias Range
V
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
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7.7 Electrical Characteristics, TRF37C32
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC Parameters
VCC
ICC
Supply Voltage
Supply Current
3.15
3.3
325
1.1
3.45
V
FLO = 2300 MHz
mA
W
Pdiss
Total Power Dissipation
Power Down Current
FLO = 2300 MHz
2
mA
RF Frequency Range
FRF
Frequency Range
1700
3800
MHz
RF Specifications
G
Gain
FRF = 2500 MHz (LSI)
within any 200 MHz Band
FRF = 2500 MHz (LSI)
9.8
0.5
dB
dB
dB
dB
Gvar
Gain Variation over Frequency
SSB Noise Figure
9.9
NF
SSB Noise Figure with Blocker
5 dBm blocker signal
17.5
Δf > 50 MHz
IIP3
Input 3rd Order Intercept Point
Output 3rd Order Intercept Point
FRF = 2500 MHz (LSI)
Fspacing = 20 MHz
29
dBm
dBm
OIP3
FRF = 2500 MHz (LSI)
Fspacing = 20 MHz
38.8
OIP2
IP1dB
ZIN
Output 2nd Order Intercept Point
Input 1 dB Compression Point
Input Impedance
FRF = 2500 MHz (LSI)
FRF = 2500 MHz (LSI)
65
11.5
50
dBm
dBm
Ω
RLi
Input Return Loss
8
dB
LO Input
PLO
LO Drive Level
–3
0
6
dBm
MHz
Ω
FLO
LO Frequency Range
Input Impedance
Input Return Loss
1500
3600
ZIN
50
10
RLi
FRF = 2800 - 3400 MHz
dB
Low Power Mode: LPM = 1
ICC
Pdiss
G
Supply Current
Total Power Dissipation
Gain
FLO = 2300 MHz
230
0.76
9.2
mA
W
FLO = 2300 MHz
FRF = 2500 MHz (LSI)
FRF = 2500 MHz (LSI)
dB
dB
NF
SSB Noise Figure
9.9
FRF = 2500 MHz (LSI),
Fspacing = 20 MHz
IIP3
Input 3rd Order Intercept Point
Input 1 dB Compression Point
22
dBm
dBm
IP1dB
FRF = 2500 MHz (LSI)
11.5
Isolation
Drive RFinA/B
Channel Isolation
IFoutA/B-IFoutB/A
FRF = 2500 MHz
48
dB
RF to IF Isolation
LO to RF Leakage
LO to IF Leakage
FRF = 2500 MHz
PLO = 0 dBm
PLO = 0 dBm
21
–55
–45
dB
dBm
dBm
Spurious
2x2 Spurious Product
3x3 Spurious Product
2RF - 2LO
3RF - 3LO
65
70
dBc
dBc
IF Output
ZL
Differential Output Impedance Load
Frequency Range
200
3.3
Ω
FIF
1 dB corner frequency
30
600
MHz
Externally supplied DC bias through
RF choke
DC Bias Range
V
8
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
7.8 Timing Requirements
MIN
TYP
MAX
UNIT
Power Control
Turn-on Time
PD = low to 90% final output power
100
100
ns
ns
PD
Turn-off Time
PD = high to initial output power –30 dB
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7.9 Typical Characteristics (TRF37A32)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
11.0
10.5
10.0
9.5
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
Dash = LPM
HSI
Dash = LPM
HSI
LSI
LSI
9.0
8.5
8.0
7.5
7.0
6.5
6.0
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 1. Gain vs Frequency over H/LSI, LPM
Figure 2. IIP3 vs Frequency over H/LSI, LPM
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
Dash = LPM
HSI
Dash = LPM
HSI
LSI
LSI
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
7.0
7.0
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
1800
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 3. NF vs Frequency over H/LSI, LPM
Figure 4. Input P1dB vs Frequency over H/LSI, LPM
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
1.1
1.0
0.9
0.8
0.7
0.6
Dash = LPM
HSI
-40 degC
25 degC
85 degC
LSI
400
600
800
1000
1200
1400
1600
500
700
900
1100
1300
1500
RF Frequency (MHz)
LO Frequency (MHz)
D001
D001
Figure 5. OIP2 vs Frequency over H/LSI, LPM
Figure 6. Power Dissipation vs Temperature, LPM
10
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
Typical Characteristics (TRF37A32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
12.0
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
HSI
LSI
HSI
LSI
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
D001
Figure 7. Gain vs IF Frequency over H/LSI
Figure 8. IIP3 vs IF Frequency over H/LSI
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
HSI
LSI
HSI
LSI
9.0
8.5
8.0
7.5
7.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
D001
Figure 9. NF vs IF Frequency over H/LSI
Figure 10. OIP2 vs IF Frequency over H/LSI
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
-80.0
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
A-B Iso
RF-IF Iso
LO-IF Leakage
LO-RF Leakage
500
700
900
1100
1300
1500
1700
400
600
800
1000
1200
1400
1600
LO Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 11. LO-IF/RF Leakage vs Frequency
Figure 12. A-B Channel and RF-IF Isolation
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Typical Characteristics (TRF37A32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
11.0
10.5
10.0
9.5
11.0
10.5
10.0
9.5
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
Solid/Dash = LSI/HSI
-40 degC
7.0
7.0
25 degC
85 degC
6.5
6.5
6.0
6.0
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
1800
RF Frequency (MHz)
RF Frequency (MHz)
Figure 13. Gain vs Frequency over Temperature (HSI/LSI)
Figure 14. Gain vs Frequency over LO Drive (H/LSI)
36.0
36.0
Solid/Dash = LSI/HSI
Solid/Dash = LSI/HSI
-3 dBm
-40 degC
25 degC
85 degC
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
0 dBm
6 dBm
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
1800
RF Frequency (MHz)
RF Frequency (MHz)
Figure 15. IIP3 vs Frequency over Temperature (HSI/LSI)
Figure 16. IIP3 vs Frequency over LO Drive (H/LSI)
14.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
Solid/Dash = LSI/HSI
-40 degC
Solid/Dash = LSI/HSI
-3 dBm
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
25 degC
85 degC
0 dBm
6 dBm
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
7.0
7.0
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
1800
RF Frequency (MHz)
RF Frequency (MHz)
Figure 17. NF vs Frequency over Temperature (HSI/LSI)
Figure 18. NF vs Frequency over LO Drive (H/LSI)
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
Typical Characteristics (TRF37A32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
0.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
Solid/Dash = LSI/HSI
-40 degC
-5.0
25 degC
85 degC
-10.0
-15.0
-20.0
-25.0
-30.0
9.0
LO
RF
8.5
8.0
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
RF Frequency (MHz)
RF Frequency (MHz)
D001
Figure 19. Input P1dB vs Frequency over Temperature
(HSI/LSI)
Figure 20. RF/LO Input Return Loss
90.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
Solid/Dash = LSI/HSI
-40 degC
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
25 degC
85 degC
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
1800
RF Frequency (MHz)
RF Frequency (MHz)
Figure 21. OIP2 vs Frequency over Temperature (HSI/LSI)
Figure 22. OIP2 vs Frequency over LO Drive (H/LSI)
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
-40 degC
25 degC
-40 degC
25 degC
85 degC
55.0
85 degC
50.0
400
600
800
1000
1200
1400
1600
1800
400
600
800
1000
1200
1400
1600
1800
RF Frequency (MHz)
RF Frequency (MHz)
D001
Figure 23. 2 x 2 Spurious over Temperature (H/LSI)
Figure 24. 3 x 3 Spurious over Temperature (H/LSI)
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7.10 Typical Characteristics (TRF37B32)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
40.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
Dash = LPM
HSI
Dash = LPM
HSI
LSI
LSI
9.0
8.5
8.0
7.5
7.0
600
1000
1400
1800
2200
2600
600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
D001
D001
Figure 25. Gain vs Frequency over H/LSI, LPM
Figure 26. IIP3 vs Frequency over H/LSI, LPM
14.0
13.0
12.0
11.0
10.0
9.0
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
Dash = LPM
HSI
Dash = LPM
HSI
LSI
LSI
9.0
8.5
8.0
8.0
7.5
7.0
600
7.0
600
1000
1400
1800
2200
2600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
D001
Figure 27. NF vs Frequency over H/LSI, LPM
Figure 28. Input P1dB vs Frequency over H/LSI, LPM
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Dash = LPM
HSI
Dash = LPM
-40 degC
25 degC
LSI
85 degC
600
1000
1400
1800
2200
2600
500
900
1300
1700
2100
2500
2900
RF Frequency (MHz)
LO Frequency (MHz)
D001
Figure 29. OIP2 vs Frequency over H/LSI, LPM
Figure 30. Power Dissipation vs Temperature, LPM
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
Typical Characteristics (TRF37B32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
12.0
11.5
11.0
10.5
10.0
9.5
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
HSI
LSI
HSI
LSI
9.0
8.5
8.0
7.5
7.0
6.5
6.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
D001
Figure 31. Gain vs IF Frequency over H/LSI
Figure 32. IIP3 vs IF Frequency over H/LSI
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
HSI
LSI
HSI
LSI
9.0
8.5
8.0
7.5
7.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
D001
Figure 33. NF vs IF Frequency over H/LSI
Figure 34. OIP2 vs IF Frequency over H/LSI
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
-80.0
RF-IF Iso
A-B Iso
LO-IF Leakage
LO-RF Leakage
500
1000
1500
2000
2500
3000
600
1000
1400
1800
2200
2600
LO Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 35. LO-IF/RF Leakage vs Frequency
Figure 36. A-B Channel and RF-IF Isolation
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Typical Characteristics (TRF37B32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
Solid/Dash = LSI/HSI
25 degC
Solid/Dash = LSI/HSI
-3 dBm
-40 degC
85 degC
0 dBm
6 dBm
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
7.0
7.0
600
1000
1400
1800
2200
2600
600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 37. Gain vs Frequency over Temperature (HSI/LSI)
Figure 38. Gain vs Frequency over LO Drive (H/LSI)
40.0
40.0
Solid/Dash = LSI/HSI
Solid/Dash = LSI/HSI
-3 dBm
38.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
-40 degC
25 degC
85 degC
34.0
0 dBm
6 dBm
36.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
600
1000
1400
1800
2200
2600
600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 39. IIP3 vs Frequency over Temperature (HSI/LSI)
Figure 40. IIP3 vs Frequency over LO Drive (H/LSI)
14.0
14.0
Solid/Dash = LSI/HSI
-40 degC
Solid/Dash = LSI/HSI
-3 dBm
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
25 degC
85 degC
0 dBm
6 dBm
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
7.0
7.0
600
1000
1400
1800
2200
2600
600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 41. NF vs Frequency over Temperature (HSI/LSI)
Figure 42. NF vs Frequency over LO Drive (H/LSI)
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
Typical Characteristics (TRF37B32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 1950 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
0.0
14.0
13.0
12.0
11.0
10.0
9.0
LO
RF
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
Solid/Dash = LSI/HSI
-40 degC
8.0
25 degC
85 degC
7.0
600
1000
1400
1800
2200
2600
500
1000
1500
2000
2500
3000
RF Frequency (MHz)
RF Frequency (MHz)
D001
Figure 43. Input P1dB vs Frequency over Temperature
(HSI/LSI)
Figure 44. RF/LO Input Return Loss
90.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
Solid/Dash = LSI/HSI
Solid/Dash = LSI/HSI
-3 dBm
-40 degC
25 degC
85 degC
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
0 dBm
6 dBm
600
1000
1400
1800
2200
2600
600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 45. OIP2 vs Frequency over Temperature (HSI/LSI)
Figure 46. OIP2 vs Frequency over LO Drive (H/LSI)
100.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
-40 degC
25 degC
85 degC
-40 degC
25 degC
85 degC
600
1000
1400
1800
2200
2600
600
1000
1400
1800
2200
2600
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 47. 2 x 2 Spurious over Temperature (H/LSI)
Figure 48. 3 x 3 Spurious over Temperature (H/LSI)
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7.11 Typical Characteristics (TRF37C32)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
40.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
18.0
Dash = LPM
HSI
Dash = LPM
HSI
LSI
LSI
9.0
8.5
8.0
7.5
7.0
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 49. Gain vs Frequency over H/LSI, LPM
Figure 50. IIP3 vs Frequency over H/LSI, LPM
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
14.0
13.0
12.0
11.0
10.0
9.0
Dash = LPM
HSI
LSI
9.0
8.5
Dash = LPM
HSI
8.0
8.0
7.5
LSI
7.0
7.0
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 51. NF vs Frequency over H/LSI, LPM
Figure 52. Input P1dB vs Frequency over H/LSI, LPM
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
Dash = LPM
HSI
Dash = LPM
-40 degC
25 degC
LSI
85 degC
1600
2000
2400
2800
3200
3600
1400
1800
2200
2600
3000
3400
RF Frequency (MHz)
LO Frequency (MHz)
D001
D001
Figure 53. OIP2 vs Frequency over H/LSI, LPM
Figure 54. Power Dissipation vs Temperature, LPM
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SLASE37A –MAY 2014–REVISED DECEMBER 2014
Typical Characteristics (TRF37C32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
12.0
11.5
11.0
10.5
10.0
9.5
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
HSI
LSI
HSI
LSI
9.0
8.5
8.0
7.5
7.0
6.5
6.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
D001
Figure 55. Gain vs IF Frequency over H/LSI
Figure 56. IIP3 vs IF Frequency over H/LSI
14.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
HSI
LSI
HSI
LSI
9.0
8.5
8.0
7.5
7.0
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
D001
D001
Figure 57. NF vs IF Frequency over H/LSI
Figure 58. OIP2 vs IF Frequency over H/LSI
-20.0
-25.0
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
-80.0
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
RF-IF Iso
A-B Iso
LO-IF Leakage
LO-RF Leakage
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
LO Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 59. LO-IF/RF Leakage vs Frequency
Figure 60. A-B Channel and RF-IF Isolation
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Typical Characteristics (TRF37C32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
Solid/Dash = LSI/HSI
-40 degC
Solid/Dash = LSI/HSI
-3 dBm
25 degC
85 degC
0 dBm
6 dBm
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
7.0
7.0
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 61. Gain vs Frequency over Temperature (HSI/LSI)
Figure 62. Gain vs Frequency over LO Drive (H/LSI)
40.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
40.0
38.0
36.0
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
18.0
24.0
Solid/Dash = LSI/HSI
Solid/Dash = LSI/HSI
-3 dBm
22.0
20.0
18.0
-40 degC
25 degC
85 degC
0 dBm
6 dBm
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 63. IIP3 vs Frequency over Temperature (HSI/LSI)
Figure 64. IIP3 vs Frequency over LO Drive (H/LSI)
14.0
14.0
Solid/Dash = LSI/HSI
-40 degC
Solid/Dash = LSI/HSI
-3 dBm
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
25 degC
85 degC
0 dBm
6 dBm
9.0
9.0
8.5
8.5
8.0
8.0
7.5
7.5
7.0
7.0
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 65. NF vs Frequency over Temperature (HSI/LSI)
Figure 66. NF vs Frequency over LO Drive (H/LSI)
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Typical Characteristics (TRF37C32) (continued)
TA = 25°C, VCC = 3.3 V; PRF = –10 dBm; FRF = 2500 MHz; PLO = 0 dBm; FIF = 200 MHz; Low Side Injection, LPM = 0 (unless
otherwise noted)
0.0
14.0
13.0
12.0
11.0
10.0
9.0
LO
RF
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
Solid/Dash = LSI/HSI
-40 degC
8.0
25 degC
85 degC
7.0
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
D001
Figure 67. Input P1dB vs Frequency over Temperature
(HSI/LSI)
Figure 68. RF/LO Input Return Loss
100.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
Solid/Dash = LSI/HSI
-40 degC
Solid/Dash = LSI/HSI
-3 dBm
0 dBm
6 dBm
25 degC
85 degC
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
Figure 69. OIP2 vs Frequency over Temperature (HSI/LSI)
Figure 70. OIP2 vs Frequency over LO Drive (H/LSI)
100.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
-40 degC
25 degC
85 degC
-40 degC
25 degC
85 degC
1600
2000
2400
2800
3200
3600
1600
2000
2400
2800
3200
3600
RF Frequency (MHz)
RF Frequency (MHz)
D001
D001
Figure 71. 2 x 2 Spurious over Temperature (H/LSI)
Figure 72. 3 x 3 Spurious over Temperature (H/LSI)
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8 Detailed Description
8.1 Overview
The TRF37x32 family is a dual-channel, down convert receive mixer. It provides high-linearity over wide RF and
IF bandwidths while also consuming low power. The device comes in three varieties, A, B, and C, to cover an
extremely wide frequency band and can operate with either low side injection (LSI) or high side injection (HSI).
The IF output is optimized for 200 MHz but operates from 30 MHz to 600 MHz with appropriate external
components.
The device consists of a passive mixer core buffered by an LO amplifier and a high-linearity IF amplifier. There is
an on-chip LDO to regulate VCC to the voltages needed for the small-geometry SiGe BiCMOS components. The
single-ended RF and LO inputs each have a wideband internal balun. The balun's center tap is internally
grounded.
Each channel offers an external power down terminal control which disables the IF circuitry. The device has a
low power mode controlled through an external terminal control. Low power mode reduces bias current in the LO
circuitry. Both power down and low power mode controls are internally biased to a normal operating state. The
IFA/B_BT terminals are self-biased and require no external components.
The TRF37x32 uses a single 3.3 V power supply and draws exceptionally low current for its performance node.
8.2 Functional Block Diagram
RFINA
IFOUTAP
IFOUTAN
IFA_BT
LO
RFINB
IFOUTBP
IFOUTBN
IFB_BT
PDA
PDB
LPM
Power
Control
Figure 73. Block Diagram
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8.3 Feature Description
8.3.1 Low Power Mode
Low power mode is enabled by setting the active-high LPM terminal to a logic high. The device contains an
internal pull-down to engage normal operation when the terminal is left unconnected or floating.
Low power mode reduces the bias current in the LO amplifier portion of the device and affects both channels.
Total current consumption is reduced 30% while lowering analog performance metrics.
8.3.2 Power Down
Each channel is powered down individually through the active-high PDA and PDB terminals. A logic high sets the
respective channel in power down. The device contains an internal pull-down to engage normal operation when
the terminal is left unconnected or floating.
Power down is implemented by removing bias in the IF amplifier. Operation of the opposite channel is not
affected when either channel is turned off. Turn-on and turn-off time is fast enough to serve in most TDD
applications.
1.2
1
0.8
Turn-Off
Turn-On
0.6
0.4
0.2
0
0
50
100
150
200
250
Time (nsec)
D001
Figure 74. Device power down turn-on and turn-off time
8.3.3 Single Ended RF Input
Each RF input is single-ended with a wideband internal balun to convert the input to a differential signal, as
shown in Figure 73. The center tap of the balun is internally grounded and is not available external to the device.
The RF input should be ac coupled to driving circuitry according to the chart in Table 1.
Table 1. RF Input AC coupling capacitor
Device
Blocking Cap Value
TRF37A32
TRF37B32
TRF37C32
20 pF
10 pF
10 pF
8.3.4 Single Ended LO Input
The LO input is single ended with an internal balun to convert the input to a differential signal. The LO drive path
includes a high frequency dual-mode oscillation inhibitor circuitry to ensure stable operation. For best operation it
is recommended to keep the LO drive level at 0 dBm or higher to ensure inhibitor circuit does not falsely engage.
At lower LO drive level, keep the LO power engaged to the device at power-up. At lower drive level the inhibitor
may engage within certain frequency bands when the LO power transitions.
At the extreme RF frequencies the LO input bandwidth will force operation to either high side injection (HSI) or
low side injection (LSI). Table 2 provides the operating range of the LO for each device.
Table 2. LO Input Frequency Operating Range
Device
Operating Range
600 - 1400 MHz
500 - 2900 MHz
TRF37A32
TRF37B32
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Table 2. LO Input Frequency Operating
Range (continued)
Device
Operating Range
Low Power mode (LPM)
disabled
1500 - 3600 MHz
TRF37C32
Low Power mode (LPM)
enabled
1500 - 3500 MHz
8.3.5 IF Amplifier
The output of the device is driven by a high-linearity IF amplifier. The output nodes must be pulled up to VCC
with high-Q inductors. It is designed to provide 200 Ω differential / 100 Ω single-ended output impedance. Layout
should include symmetry for the differential output signal paths.
The IF output circuitry is optimized for performance at 200 MHz but operates over 30 MHz – 600 MHz.
8.4 Device Functional Modes
8.4.1 Low Power Mode
Low power mode is activated through the low power terminal, as described in the features description. It is
designed for extremely low power consumption.
8.4.2 Single Channel and Shutdown Modes
The device may be operated as a single channel device by disabling one channel or in complete shutdown by
disabling both channels.
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9 Applications and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The devices are high-linearity, wideband receive mixers. They are typically implemented to convert frequencies
from the range 400 MHz to 3800 MHz into the range 30 MHz to 600 MHz.
9.2 Typical Application
The TRF37x32 device is typically placed in a system as illustrated in Figure 75.
TRF37x32
BPF
BPF
BPF
DRIVER
ADC
LNA
FPGA /
ASIC
SDR RECEIVER
SYSTEM
CLOCK
GENERATOR
RF PLL
SYNTH
Figure 75. Typical System Implementation of TRF37x32
A typical schematic for the TRF37x32 is shown in Figure 76.
+3.3V
0.01uF
0.01uF
+3.3V
0.01uF
0.047uF
0.047uF
10pF
100pF
PDA
NC
NC
1
24
23
22
21
20
19
18
17
RFINA
2
10pF
NC
GND
LO
3
+3.3V
10pF
VCC_LO
4
TRF37x32
(Top View)
10pF
2.6k:
10pF
REXT
NC
NC
5
6
7
8
GND
NC
RFINB
PDB
LPM
100pF
100pF
+3.3V
0.01uF
0.01uF
+3.3V
10pF
0.047uF
0.047uF
0.01uF
Power
Controller
Figure 76. Typical Application Schematic for TRF37x32
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Typical Application (continued)
9.2.1 Design Requirements
For this design example, use the parameters shown in Table 3.
Table 3. Design Parameters
EXAMPLE APPLICATION
REQUIREMENTS(1)
MIXER PARAMETER
TRF37B32 PERFORMANCE (TYPICAL)
RF Frequency Range
2300 - 2400 MHz
318.64 - 418.64 MHz
9 - 10 dB
700 - 2700 MHz
30 - 600 MHz
IF Frequency Range
Gain
NF
9.7 dB at FRF = 2300 MHz
10 dB at FRF = 2300 MHz
30 dBm at FRF = 2300 MHz
11 dBm at FRF = 2300 MHz
< 12 dB
IIP3
> 28 dBm
IP1dB
> 8 dBm
(1) The example application requirements are derived from a hypothetical application and do not reflect the performance of the TRF37x32.
9.2.2 Detailed Design Procedure
9.2.2.1 Power Level
Input power should back off from the TRF37x32 compression point for linear operation, ideally by 10dB or more.
Choose LNA gain and gain scheduling in order to set the appropriate power level at the RF input to the
TRF37x32.
Given the expected input power level, use the expected gain through the mixer and other elements, such as
SAW filter and matching networks, to calculate the voltage expected at the ADC. Adjust gain and loss elements
to maximize the utilization of ADC dynamic range.
9.2.2.2 Matching
Although the TRF37x32 was designed to interface with 50 Ω RF and LO and 200 Ω differential signal lines, some
elements in the signal chain may not present a wideband real impedance. Matching components are optional but
may be used at these ports to improve impedance alignment, thereby increasing power delivered to the RF node
and decreasing reflected and radiated power. Good matching maximizes isolation and linearity performance.
9.2.2.3 RF Input Component Selection
The blocking capacitor value on the RF input should be selected according to Table 1.
9.2.2.4 IF Output Component Selection
Use high Q inductors for pull-up biasing on the IF output. 270 nH 0805-size wirewound indictors provides
excellent linearity and gain. Larger inductor values may compress the IF bandwidth, while smaller package sizes
tend to introduce lower inductor Q ratings.
Connect the supply nodes of both inductors for a given channel symmetrically to the VCC net with close
proximity to ensure balanced connection to the supply.
9.2.2.5 Frequency Planning
The LO and RF inputs are both designed for wideband behavior, and either high-side or low-side injection may
be used interchangeably across most of the RF band. At the extreme RF frequencies the LO input bandwidth will
force operation to either high side injection (HSI) or low side injection (LSI). Table 2 provides the operating range
of the LO for each device. Where possible it is recommended to utilize low side injection to keep the power
dissipation to a minimum.
9.2.2.6 Control Terminal Transients
Decoupling capacitors reduce terminal noise but also slow transient response. Adjust external capacitors in order
to meet specified power-on and power-off response times. Apply transmission line matching techniques to
achieve the fastest response times.
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9.2.3 Application Curves
0
±20
±40
±60
±80
±100
±120
0
25
50
75 100 125 150 175 200 225 250
Frequency (MHz)
C016
Figure 77. 4-Carrier Receiver Application
10 Power Supply Recommendations
The nominal voltage supply is 3.3 V; however, the TRF37x32 offers very consistent performance across the
entire recommended voltage range. Signal isolation depends partly on power supply isolation. All supplies may
be generated from a common source but should be isolated through decoupling capacitors placed close to the
device. The typical application schematic in Figure 76 is an excellent example. Select capacitors with self-
resonant frequency near the application frequency or noise frequency. When multiple capacitors are used in
parallel to create a broadband decoupling network, place the capacitor with the higher self-resonant frequency
closer to the device.
10.1 Power Up Sequence
No power up sequence is required.
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11 Layout
11.1 Layout Guidelines
Good layout practice helps to enable excellent linearity and isolation performance. An example of good layout is
shown in Figure 78. In the example, only the top signal layer and its adjacent ground reference plane are shown.
Some recommended layout principles include the following:
•
Excellent electrical connection from the PowerPAD™ to the board ground is essential. Use the recommended
footprint, solder the pad to the board, and do not include solder mask under the pad
•
•
Connect pad ground to device terminal ground on the top board layer.
Verify that the return current path follows the primary current path by including topside terminal to pour
ground connection and vias close to any reference layer transition.
•
•
•
•
Do not route signal lines over breaks in the reference plane.
Maintain symmetry as much as possible between lines in a differential pair. Match electrical lengths.
Avoid routing clocks and digital control lines near signal lines.
Do not route signal lines over noisy power planes. Ground is the best reference, although clean power planes
can serve where necessary.
•
•
Place supply decoupling close to the device.
Keep channels physically separated to improve isolation.
11.2 Layout Example
Figure 78.
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12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 4. Related Links
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TRF37A32
TRF37B32
TRF37C32
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
Click here
12.2 Trademarks
PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
25-Jan-2015
PACKAGING INFORMATION
Orderable Device
TRF37A32IRTVR
TRF37A32IRTVT
TRF37B32IRTVR
TRF37B32IRTVT
TRF37C32IRTVR
TRF37C32IRTVT
Status Package Type Package Pins Package
Eco Plan
Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
-40 to 85
Device Marking
Samples
Drawing
Qty
(1)
(2)
(6)
(3)
(4/5)
ACTIVE
WQFN
WQFN
WQFN
WQFN
WQFN
WQFN
RTV
32
32
32
32
32
32
3000
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
CU NIPDAUAG
CU NIPDAUAG
CU NIPDAUAG
CU NIPDAUAG
CU NIPDAUAG
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
TR37A32
IRTV
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
RTV
RTV
RTV
RTV
RTV
250
3000
250
Green (RoHS
& no Sb/Br)
TR37A32
IRTV
Green (RoHS
& no Sb/Br)
TR37B32
IRTV
Green (RoHS
& no Sb/Br)
TR37B32
IRTV
3000
250
Green (RoHS
& no Sb/Br)
TR37C32
IRTV
Green (RoHS
& no Sb/Br)
TR37C32
IRTV
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
25-Jan-2015
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Mar-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TRF37A32IRTVR
TRF37A32IRTVT
TRF37C32IRTVR
TRF37C32IRTVT
WQFN
WQFN
WQFN
WQFN
RTV
RTV
RTV
RTV
32
32
32
32
3000
250
330.0
180.0
330.0
180.0
12.4
12.4
12.4
12.4
5.3
5.3
5.3
5.3
5.3
5.3
5.3
5.3
1.5
1.5
1.5
1.5
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q2
Q2
Q2
Q2
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Mar-2015
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TRF37A32IRTVR
TRF37A32IRTVT
TRF37C32IRTVR
TRF37C32IRTVT
WQFN
WQFN
WQFN
WQFN
RTV
RTV
RTV
RTV
32
32
32
32
3000
250
338.1
210.0
338.1
210.0
338.1
185.0
338.1
185.0
20.6
35.0
20.6
35.0
3000
250
Pack Materials-Page 2
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