TS5A3153DCURG4 [TI]
5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER; 5 -V / 3.3 -V单通道2 ： 1多路复用器/
| 型号： | TS5A3153DCURG4 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER |
| 文件： | 总26页 (文件大小：758K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS5A3153
www.ti.com ..................................................................................................................................................... SCDS215A–OCTOBER 2005–REVISED JULY 2008
5-V/3.3-V SINGLE-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER
1
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
•
Cell Phones
PDAs
2
•
Isolation in the Powered-Off Mode, V+ = 0
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
•
•
•
•
•
•
•
•
Portable Instrumentation
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Communication Circuits
Modems
Hard Drives
Computer Peripherals
Wireless Terminals and Peripherals
Control Inputs Are 5.5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Low Total Harmonic Distortion (THD)
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
•
ESD Performance Tested Per JESD 22
–
2000-V Human-Body Model
(A114-B, Class II)
–
1000-V Charged-Device Model (C101)
DCU PACKAGE
(TOP VIEW)
YZP PACKAGE
(BOTTOM VIEW)
Logic
1
8
7
6
5
D1
C1
B1
A1
D2
C2
B2
A2
COM
V
+
GND
GND
EN
4
3
5
6
IN
Control
EN
GND
GND
2
3
4
NC
NO
IN
NO
NC
2
1
7
8
Logic
COM
V
+
Control
DESCRIPTION/ORDERING INFORMATION
The TS5A3153 is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent on-resistance matching with the
break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel to
another. The device has an excellent total harmonic distortion (THD) performance and consumes very low
power. These features make this device suitable for portable audio applications.
ORDERING INFORMATION
TA
PACKAGE(1)(2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING(3)
NanoStar™ – WCSP (DSBGA)
0.23-mm Large Bump – YZP
(Pb-free)
Reel of 3000
Reel of 3000
TS5A3153YZPR
_ _ _J57
JCD_
–40°C to 85°C
SSOP – DCU
TS5A3153DCUR
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
(3) DCU: The actual top-side marking has one additional character that designates the assembly/test site.
YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following
character to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NanoStar is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2008, Texas Instruments Incorporated
TS5A3153
SCDS215A–OCTOBER 2005–REVISED JULY 2008 ..................................................................................................................................................... www.ti.com
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
EN
IN
L
L
L
H
X
ON
OFF
OFF
OFF
ON
H
OFF
Summary of Characteristics(1)
Single-Pole, Double-Throw
2:1 Multiplexer/Demultiplexer (SPDT)
Configuration
Number of channels
ON-state resistance (ron
ON-state resistance match (Δron
ON-state resistance flatness (ron(flat)
Turn-on/turn-off time (tON/tOFF
1
1.1 Ω
)
)
0.1 Ω
)
0.15 Ω
)
20 ns/15 ns
12 ns
Make-before-break time (tMBB
Charge injection (QC)
Bandwidth (BW)
)
36 pC
100 MHz
OFF isolation (OISO
Crosstalk (XTALK
)
–65 dB at 1 MHz
–68 dB at 1 MHz
0.01%
)
Total harmonic distortion (THD)
Leakage current (ICOM(OFF)/INC(OFF)
Power-supply current (I+)
Package option
)
±20 nA
0.1 µA
8-pin SSOP or DSBGA
(1) V+ = 5 V, TA = 25°C
2
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TS5A3153
www.ti.com ..................................................................................................................................................... SCDS215A–OCTOBER 2005–REVISED JULY 2008
ABSOLUTE MINIMUM AND MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
V+
Supply voltage range(3)
–0.5
6.5
V
VNC
VNO
,
,
Analog voltage range(3)(4)(5)
–0.5
V+ + 0.5
V
VCOM
IK
INC
ICOM
INO
Analog port diode current
On-state switch current
VNC, VNO, VCOM < 0 or VNO, VNC, VCOM > V+
VNC, VNO, VCOM = 0 to V+
–50
mA
mA
,
–200
200
400
6.5
,
On-state peak switch current(6)
–400
VI
Digital input voltage range(3)(4)
Digital input clamp current
–0.5
–50
V
IIK
VI < 0
mA
mA
mA
I+
Continuous current through V+
Continuous current through GND
100
100
227
102
150
IGND
–100
DCU package
YZP package
θJA
Package thermal impedance(7)
Storage temperature range
°C/W
°C
Tstg
–65
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle.
(7) The package thermal impedance is calculated in accordance with JESD 51-7.
Copyright © 2005–2008, Texas Instruments Incorporated
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TS5A3153
SCDS215A–OCTOBER 2005–REVISED JULY 2008 ..................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY(1)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
0.9
0.8
1.1
1.3
0.9
1.1
0.1
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
rpeak
4.5 V
4.5 V
Ω
25°C
Full
ON-state
resistance
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
ron
Ω
Ω
ON-state
resistance
matching
between
channels
25°C
0.05
VNO or VNC = 2.5 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
Δron
4.5 V
4.5 V
Full
0.1
25°C
Full
0.15
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
Ω
VNO or VNC = 1 V, 1.5 V,
2.5 V,
ICOM = –100 mA,
25°C
0.09 0.15
0.15
Switch ON,
See Figure 13
Full
VNC or VNO = 1 V,
VCOM = 4.5 V,
or
VNC or VNO = 4.5 V,
VCOM = 1 V,
25°C
–20
2
20
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 14
5.5 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
–150
150
25°C
Full
–5
–25
–20
0.7
2
5
25
20
INC(PWROFF)
INO(PWROFF)
,
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 4.5 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INC(ON)
,
Switch ON,
See Figure 15
5.5 V
INO(ON)
Full
25°C
Full
–150
–20
150
20
VCOM = 1 V, VNC or
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNC or VNO = 1 V,
2
Switch OFF,
See Figure 14
ICOM(OFF)
ICOM(PWROFF)
ICOM(ON)
5.5 V
0 V
nA
µA
nA
COM
OFF leakage
current
–150
150
25°C
Full
–5
–25
–20
0.7
2
5
25
20
VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,
Switch OFF,
See Figure 14
VCOM = 1 V,
VNC or VNO = Open,
or
VCOM = 4.5 V,
VNC or VNO = Open,
25°C
COM
ON leakage
current
Switch ON,
See Figure 15
5.5 V
Full
–150
150
Digital Control Inputs (IN, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2.4
0
5.5
0.8
V
V
25°C
Full
–100
–100
25 100
100
Input leakage
current
IIH, IIL
VI = 5.5 V or 0 V
5.5 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
4
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TS5A3153
www.ti.com ..................................................................................................................................................... SCDS215A–OCTOBER 2005–REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 5-V SUPPLY (continued)
V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
5 V
1
1
12.5
8.5
7
16
17.5
15
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
Turn-off time
tON
ns
ns
ns
4.5 V to
5.5 V
25°C
Full
5 V
2.5
2
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
tOFF
4.5 V to
5.5 V
18
25°C
Full
5 V
1
12
Break-before-
make time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tMBB
4.5 V to
5.5 V
0.5
15
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
Charge injection
QC
25°C
25°C
5 V
12
19
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
Switch OFF,
See Figure 16
VNC or VNO = V+ or GND,
VNC or VNO = V+ or GND,
5 V
NC, NO
ON
capacitance
CNC(ON)
,
Switch ON,
See Figure 16
25°C
5 V
57
pF
CNO(ON)
CCOM(OFF)
CCOM(ON)
CI
COM OFF
capacitance
Switch ON,
See Figure 16
VCOM = V+ or GND,
VCOM = V+ or GND,
VI = V+ or GND,
RL = 50 Ω,
25°C
25°C
25°C
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
5 V
5 V
5 V
36
57
pF
pF
COM ON
capacitance
Switch ON,
See Figure 16
Digital input
capacitance
See Figure 16
2
pF
Switch ON,
See Figure 19
Bandwidth
OFF isolation
Crosstalk
BW
97
MHz
dB
dB
%
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
OISO
–64
–64
0.004
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
XTALK
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
Supply
25°C
Full
0.02
0.1
0.5
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
5.5 V
µA
Copyright © 2005–2008, Texas Instruments Incorporated
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SCDS215A–OCTOBER 2005–REVISED JULY 2008 ..................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY(1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
Analog
Switch
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
1.3
1.2
1.6
1.8
1.5
1.7
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
rpeak
3 V
3 V
Ω
25°C
Full
ON-state
resistance
VNO or VNC = 2 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
0.08 0.15
VNO or VNC = 2 V, 0.8 V
ICOM = –100 mA,
Switch ON,
See Figure 13
Δron
3 V
3 V
Full
0.15
25°C
Full
0.2
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,
Switch ON,
See Figure 13
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
0.09 0.15
0.15
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,
Switch ON,
See Figure 13
VNC or VNO = 1 V, VCOM = 3 V,
or
VNC or VNO = 3 V, VCOM = 1 V,
25°C
–20
–50
2
20
50
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 14
3.6 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
25°C
Full
–1
–15
–20
0.2
2
1
15
20
INC(PWROFF)
INO(PWROFF)
,
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0 V,
Switch OFF,
See Figure 14
NC, NO
ON leakage
current
VNC or VNO = 1 V, VCOM = Open,
or
VNC or VNO = 3 V, VCOM = Open,
25°C
INC(ON)
,
Switch ON,
See Figure 15
3.6 V
INO(ON)
Full
25°C
Full
–50
–20
–50
50
20
50
VCOM = 1 V, VNC or VNO = 3 V,
or
VCOM = 3 V, VNC or VNO = 1 V,
2
Switch OFF,
See Figure 14
ICOM(OFF)
3.6 V
0 V
nA
µA
nA
COM
OFF leakage
current
25°C
Full
–1
–15
–20
0.2
2
1
15
20
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 14
ICOM(PWROFF)
COM
ON leakage
current
VCOM = 1 V, VNC or VNO = Open,
or
VCOM = 3 V, VNC or VNO = Open
25°C
Switch ON,
See Figure 15
ICOM(ON)
3.6 V
Full
–50
50
Digital Control Inputs (IN, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
0
5.5
0.8
V
V
25°C
Full
–100
–100
25 100
100
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
3.6 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6
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Copyright © 2005–2008, Texas Instruments Incorporated
Product Folder Link(s): TS5A3153
TS5A3153
www.ti.com ..................................................................................................................................................... SCDS215A–OCTOBER 2005–REVISED JULY 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP MAX UNIT
25°C
Full
3.3 V
1
1
17
9.5
12
22
24
16
19
22
25
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
Turn-off time
tON
ns
ns
ns
3 V to
3.6 V
25°C
Full
3.3 V
4.3
4
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
tOFF
3 V to
3.6 V
25°C
Full
3.3 V
2
Break-before-
make time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tMBB
3 V to
3.6 V
1
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
QC
25°C
25°C
3.3 V
8
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
Switch OFF,
See Figure 16
VNC or VNO = V+ or GND,
3.3 V
19
NC, NO
ON
capacitance
CNC(ON)
CNO(ON)
,
Switch ON,
See Figure 16
VNC or VNO = V+ or GND,
VCOM = V+ or GND,
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
57
36
57
pF
pF
pF
COM OFF
capacitance
Switch ON,
See
CCOM(OFF)
COM
ON
capacitance
Switch ON,
See Figure 16
CCOM(ON)
VCOM = V+ or GND,
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
2
97
pF
MHz
dB
Switch ON,
See Figure 19
Bandwidth
OFF isolation
Crosstalk
BW
RL = 50 Ω,
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
OISO
XTALK
–64
–64
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
dB
f = 20 Hz to 20
kHz,
See Figure 23
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
THD
25°C
3.3 V
3.6 V
0.01
0.01
%
Supply
25°C
Full
0.1
Positive supply
current
Switch ON or
OFF
I+
VI = V+ or GND,
µA
0.25
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SCDS215A–OCTOBER 2005–REVISED JULY 2008 ..................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY(1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
1.9
1.6
2.5
2.7
2.1
2.5
0.2
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
rpeak
2.3 V
2.3 V
Ω
25°C
Full
ON-state
resistance
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
ron
Ω
Ω
ON-state
resistance
matching
between
channels
25°C
0.12
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
Δron
2.3 V
2.3 V
Full
0.2
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 13
25°C
0.65
0.5
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
1
1
VNO or VNC = 0.8 V, 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 13
VNC or VNO = 0.5 V,
VCOM = 2.2 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V,
25°C
–20
–50
2
20
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 14
2.7 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
50
25°C
Full
–1
–10
–20
0.1
1
10
20
INC(PWROFF)
INO(PWROFF)
,
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INC(ON)
,
Switch ON,
See Figure 15
2.7 V
INO(ON)
Full
25°C
Full
–50
–20
–50
50
20
50
VCOM = 0.5 V, VNC or
VNO = 2.2 V,
or
VCOM = 2.2 V, VNC or
VNO = 0.5V,
Switch OFF,
See Figure 14
ICOM(OFF)
ICOM(PWROFF)
ICOM(ON)
2.7 V
0 V
nA
µA
nA
COM
OFF leakage
current
25°C
Full
–1
–10
–20
1
10
20
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
Switch OFF,
See Figure 14
VCOM = 0.5 V, VNC or
VNO = Open,
or
VCOM = 2.2 V, VNC or
VNO = Open,
25°C
COM
ON leakage
current
Switch ON,
See Figure 15
2.7 V
Full
–50
50
Digital Control Inputs (IN, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.8
0
5.5
0.6
V
V
25°C
Full
–100
–100
25 100
100
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
2.7 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
2.5 V
1.7
1.5
5.2
5
24
10.5
10
31
33.5
17
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
Turn-off time
tON
ns
ns
ns
2.3 V to
2.7 V
25°C
Full
2.5 V
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
tOFF
2.3 V to
2.7 V
20
25°C
Full
2.5 V
3
30
Break-before-
make time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tMBB
2.3 V to
2.7 V
2
40
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
Charge injection
QC
25°C
25°C
2.5 V
6
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
Switch OFF,
See Figure 16
VNC or VNO = V+ or GND,
VNC or VNO = V+ or GND,
2.5 V
19
NC, NO
ON
capacitance
CNC(ON)
,
Switch ON,
See Figure 16
25°C
2.5 V
57
pF
CNO(ON)
CCOM(OFF)
CCOM(ON)
CI
COM OFF
capacitance
Switch ON,
See Figure 16
VCOM = V+ or GND,
VCOM = V+ or GND,
VI = V+ or GND,
RL = 50 Ω,
25°C
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
36
57
pF
pF
COM ON
capacitance
Switch ON,
See Figure 16
Digital input
capacitance
See Figure 16
2
pF
Switch ON,
See Figure 19
Bandwidth
OFF isolation
Crosstalk
BW
100
–64
–64
0.020
MHz
dB
dB
%
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
OISO
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
XTALK
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 23
Supply
25°C
Full
0.001 0.05
0.15
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
µA
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY(1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
Analog
Switch
Analog signal
range
VCOM, VNO
VNC
,
0
V+
V
25°C
Full
5.2
2
15
20
Peak ON
resistance
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 13
rpeak
1.65 V
1.65 V
Ω
25°C
Full
2.7
3.1
0.3
ON-state
resistance
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 13
ron
Ω
Ω
ON-state
resistance
matching
between
channels
25°C
0.16
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 13
Δron
1.65 V
1.65 V
Full
0.3
0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 13
25°C
3
3
ON-state
resistance
flatness
ron(flat)
Ω
25°C
Full
6
8
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 13
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V,
25°C
–20
–50
1.5
20
INC(OFF)
INO(OFF)
,
Switch OFF,
See Figure 14
1.95 V
0 V
nA
µA
nA
NC, NO
OFF leakage
current
Full
50
25°C
Full
–1
–10
–20
0.1
1.5
1
10
20
INC(PWROFF)
INO(PWROFF)
,
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
Switch OFF,
See Figure 14
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
25°C
NC, NO
ON leakage
current
INC(ON)
,
Switch ON,
See Figure 15
1.95 V
INO(ON)
Full
25°C
Full
–50
–20
–50
50
20
50
VNC or VNO = 1.65 V,
VCOM = 0.3 V,
or
VNC or VN O = 0.3 V,
VCOM = 1.65 V,
1.5
Switch OFF,
See Figure 14
ICOM(OFF)
ICOM(PWROFF)
ICOM(ON)
1.95 V
0 V
nA
µA
nA
COM
OFF leakage
current
25°C
Full
–1
–10
–20
0.06
1.5
1
10
20
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
Switch OFF,
See Figure 14
VNC or VNO = Open,
VCOM = 0.3 V,
or
VNC or VNO = Open,
VCOM = 1.65 V,
25°C
COM
ON leakage
current
Switch ON,
See Figure 15
1.95 V
Full
–50
50
Digital Control Inputs (IN, EN)(2)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.5
0
5.6
0.6
V
V
25°C
Full
–100
–100
25 100
100
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
1.95 V
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP MAX UNIT
25°C
Full
5 V
4.5
4
45
12
31
61
63
19
21
60
65
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
Turn-on time
Turn-off time
tON
ns
ns
ns
1.65 V to
1.95 V
25°C
Full
5 V
5.4
5
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
tOFF
1.65 V to
1.95 V
25°C
Full
5 V
4
Break-before-
make time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 18
tBBM
1.65 V to
1.95 V
3
Charge
injection
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 22
QC
25°C
25°C
1.8 V
4
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
CNO(OFF)
,
Switch OFF,
See Figure 16
VNC or VNO = V+ or GND,
VNC or VNO = V+ or GND,
1.8 V
19
NC, NO
ON
capacitance
CNC(ON)
,
Switch ON,
See Figure 16
25°C
1.8 V
57
pF
CNO(ON)
CCOM(OFF)
CCOM(ON)
CI
COM OFF
capacitance
Switch ON,
See Figure 16
VCOM = V+ or GND,
VCOM = V+ or GND,
VI = V+ or GND,
RL = 50 Ω,
25°C
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
36
57
pF
pF
COM ON
capacitance
Switch ON,
See Figure 16
Digital input
capacitance
See Figure 16
2
pF
Switch ON,
See Figure 19
Bandwidth
OFF isolation
Crosstalk
BW
100
–64
–64
MHz
dB
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 20
OISO
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 21
XTALK
dB
f = 20 Hz to 20
kHz,
See Figure 23
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
THD
25°C
1.8 V
0.060
%
Supply
25°C
Full
0.001 0.05
0.1
Positive supply
current
I+
VI = V+ or GND,
Switch ON or OFF
1.95 V
µA
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TYPICAL PERFORMANCE
T
= 25°C
A
T
T
T
= 85°C
= 25°C
= –40°C
A
A
A
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM (V+ = 3 V)
50
45
40
35
30
25
20
15
10
5
I
COM(OFF)
I
/
NO NC(OFF)
I
/
NO NC(ON)
T
T
T
= 85°C
= 25°C
= –40°C
A
A
A
I
COM(ON)
0
−40
25
(°C)
85
T
A
Figure 3. ron vs VCOM (V+ = 5 V)
Figure 4. Leakage Current vs Temperature
(V+ = 5.5 V)
20
10
50
40
30
20
10
0
t
ON
0
−10
−20
−30
−40
−50
−60
−70
V
+
= 5 V
t
V
+
= 3 V
OFF
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
1
2
3
4
5
V
COM
(V)
V
+
(V)
Figure 5. Charge Injection (QC) vs VCOM
Figure 6. tON and tOFF vs Supply Voltage
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TYPICAL PERFORMANCE (continued)
16
14
12
10
8
t
ON
t
OFF
6
4
2
0
−40
25
85
T
A
(C)
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
Figure 8. Logic-Level Threshold vs V+
0
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−2
−4
−6
−8
−10
−12
−14
0.1
1
10
100
1000
0.1
1
10
100
1000
Frequency (Mhz)
Frequency (MHz)
Figure 9. Bandwidth (V+ = 5 V)
Figure 10. OFF Isolation and Crosstalk (V+ = 5 V)
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
140
V = 3 V
+
120
100
80
60
40
20
0
V
= 5 V
+
0
0.5
1
1.5
2
(C)
2.5
3
3.5
4
T
A
0
0.001
0.1
1
10
100
Frequency (kHz)
Figure 11. Total Harmonic Distortion (THD)
vs Frequency
Figure 12. Power Supply Current vs Temperature
(V+ = 5 V)
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PIN DESCRIPTION
PIN NO.
NAME
COM
EN
DESCRIPTION
1
2
3
4
5
6
7
8
Common
Enable control input
Digital ground
Digital ground
GND
GND
IN
Digital control to connect the COM to NO or NC
Normally open
NO
NC
Normally closed
V+
Power supply
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
DESCRIPTION
Voltage at COM
Voltage at NC
Voltage at NO
VNO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
rpeak
Δron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INC(OFF)
INC(PWROFF)
INO(OFF)
Leakage current measured at the NC port during the power-off condition, V+ = 0
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
INO(PWROFF)
INC(ON)
Leakage current measured at the NO port during the power-off condition, V+ = 0
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
INO(ON)
ICOM(ON)
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state
and the output (NC or NO) open
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the OFF
state and the output (NC or NO) open
ICOM(PWROFF)
Leakage current measured at the COM port during the power-off condition, V+ = 0
Minimum input voltage for logic high for the control input (IN, EN)
Maximum input voltage for logic low for the control input (IN, EN)
Voltage at the control input (IN, EN)
VIH
VIL
VI
IIH, IIL
Leakage current measured at the control input (IN, EN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON.
tON
tOFF
tBBM
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or
COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input. Charge injection, QC = CL × ΔVCOM, CL is the load capacitance, and ΔVCOM is the change in analog output
voltage.
QC
CNC(OFF)
CNO(OFF)
CNC(ON)
CNO(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
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PARAMETER DESCRIPTION (continued)
SYMBOL
CCOM(ON)
CCOM(OFF)
CI
DESCRIPTION
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is OFF
Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to
NC). This is measured in a specific frequency and in dB.
XTALK
BW
THD
I+
Bandwidth of the switch. This is the frequency where the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of fundamental harmonic.
Static power-supply current with the control (IN, EN) pin at V+ or GND
PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NC
COM
V
COM
+
Channel ON
COM * VNO or VNC
W
V
NO
NO
V
r
+
on
V = V or V
IL
ICOM
IN or EN
I
COM
V
I
I
IH
+
GND
Figure 13. ON-State Resistance (ron)
V
+
V
NC
NC
COM
V
COM
+
+
V
NO
NO
OFF-State Leakage Current
Channel OFF
V = V or V
IL
I
IH
IN or EN
V
I
+
GND
Figure 14. OFF-State Leakage Current (INC(OFF), INO(OFF), INO(PWROFF), ICOM(PWROFF)
)
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PARAMETER MEASUREMENT INFORMATION (continued)
V
+
V
NC
NC
COM
V
COM
+
V
NO
NO
ON-State Leakage Current
Channel ON
IN or EN
V = V or V
IL
I
IH
V
I
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON)
)
V
+
V
V
NC
NC
Capacitance
Meter
V
= V or GND
+
BIAS
NO
NO
V = V or V
I IL
IH
V
COM
COM
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
V
I
IN or EN
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)
)
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PARAMETER MEASUREMENT INFORMATION (continued)
V
+
TEST
R
L
C
L
V
COM
V
NC
or V
C
NC or NO
NC or NO
t
50 Ω
50 Ω
35 pF
35 pF
V
+
NO
ON
COM
V
COM
(2)
R
L
V
+
t
L
OFF
IN or EN
V
0
Logic
Input
(V )
I
+
V
I
50%
50%
Logic
(1)
GND
Input
t
ON
t
OFF
Switch
Output
90%
90%
(V or V
)
NO
NC
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
C includes probe and jig capacitance.
L
O
r
f
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF
)
V
+
V
Logic
Input
(V )
I
+
V
NC
or V
NO
50%
90%
NC or NO
NC or NO
0
V
COM
COM
Switch
Output
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
t
BBM
Logic
(1)
V
or V = V
NO +
NC
GND
Input
R = 50 Ω
L
C = 35 pF
L
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
C includes probe and jig capacitance.
L
O
r
f
Figure 18. Make-Before-Break Time (tMBB
)
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PARAMETER MEASUREMENT INFORMATION (continued)
V
+
Network Analyzer
50 W
V
NC
NC
Channel ON: NC to COM
V = V or GND
V
COM
COM
I
+
Source
Signal
NO
Network Analyzer Setup
INor EN
V
I
Source Power = 0 dBm
50 W
(632-mV P-P at 50-W load)
+
GND
DC Bias = 350 mV
Figure 19. Bandwidth (BW)
V
+
Network Analyzer
Channel OFF: NC to COM
50 W
V
NC
NC
V = V or GND
I
+
V
COM
COM
Source
Signal
50 W
NO
Network Analyzer Setup
IN or EN
Source Power = 0 dBm
V
I
(632-mV P-P at 50-W load)
50 W
+
GND
DC Bias = 350 mV
Figure 20. OFF Isolation (OISO
)
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or GND
50 W
V
V
NC
NC
V
COM
I
+
Source
Signal
NO
IN or EN
NO
+
Network Analyzer Setup
50 W
V
I
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 21. Crosstalk (XTALK
)
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TS5A3153
www.ti.com ..................................................................................................................................................... SCDS215A–OCTOBER 2005–REVISED JULY 2008
PARAMETER MEASUREMENT INFORMATION (continued)
V
IH
V
+
Logic
Input
(V
I)
OFF
ON
OFF
V
IL
R
GEN
NC or NO
NC or NO
IN or EN
COM
V
COM
+
V
COM
∆V
COM
V
GEN
(2)
C
L
V
= 0 to V
= 0
GEN
+
V
I
R
GEN
C = 0.1 nF
L
Logic
(1)
GND
Q = C × ∆V
C L COM
Input
V = V or V
IL
I
IH
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Z = 50 Ω, t < 5 ns, t < 5 ns.
C includes probe and jig capacitance.
L
O
r
f
Figure 22. Charge Injection (QC)
V = V or V
Channel ON: COM to NC
= V P-P
R = 600 Ω
I
IH
IL
L
V /2
+
V
f = 20 Hz to 20 kHz
SOURCE
C = 50 pF
L
SOURCE
+
V
+
Audio Analyzer
R
L
10 mF
NC
NO
10 mF
Source
Signal
COM
IN
(1)
C
L
600 W
600 W
V
I
+
GND
600 W
(1)
C includes probe and jig capacitance.
L
Figure 23. Total Harmonic Distortion (THD)
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Product Folder Link(s): TS5A3153
PACKAGE OPTION ADDENDUM
www.ti.com
22-Jul-2008
PACKAGING INFORMATION
Orderable Device
TS5A3153DCUR
TS5A3153DCURE4
TS5A3153DCURG4
TS5A3153YZPR
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
US8
DCU
8
8
8
8
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
US8
US8
DCU
DCU
YZP
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
DSBGA
3000 Green (RoHS &
no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Aug-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS5A3153DCUR
TS5A3153YZPR
US8
DCU
YZP
8
8
3000
3000
180.0
180.0
9.2
8.4
2.25
1.02
3.35
2.02
1.05
0.63
4.0
4.0
8.0
8.0
Q3
Q1
DSBGA
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Aug-2009
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TS5A3153DCUR
TS5A3153YZPR
US8
DCU
YZP
8
8
3000
3000
202.0
220.0
201.0
220.0
28.0
34.0
DSBGA
Pack Materials-Page 2
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