TS5A3159-EP_14 [TI]
1-W SPDT ANALOG SWITCH;型号: | TS5A3159-EP_14 |
厂家: | TEXAS INSTRUMENTS |
描述: | 1-W SPDT ANALOG SWITCH 光电二极管 |
文件: | 总22页 (文件大小:364K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
FEATURES
•
•
•
Low Total Harmonic Distortion
•
Controlled Baseline
1.65-V to 5.5-V Single-Supply Operation
– One Assembly/Test Site, One Fabrication
Site
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
•
Enhanced Diminishing Manufacturing
Sources (DMS) Support
•
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
•
•
•
•
•
•
•
Enhanced Product-Change Notification
(1)
Qualification Pedigree
– 1000-V Charged-Device Model (C101)
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
Control Inputs Are 5-V Tolerant
Low Charge Injection
APPLICATIONS
•
•
•
Cell Phones
PDAs
Portable Instrumentation
Excellent ON-State Resistance Matching
SOT-23 PACKAGE
(TOP VIEW)
(1) Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not liited to,
Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
NO
GND
NC
1
2
3
6
5
4
IN
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this componenet beyond specified
performance and environmental limits.
V
+
COM
DESCRIPTION/ORDERING INFORMATION
The TS5A3159-EP is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching with the
break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to
another. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
These features make this device suitable for portable audio applications.
Summary of Characteristics(1)
2:1 Multiplexer/
Configuration
Demultiplexer
(1 × SPDT)
Number of channels
1
1.1 Ω
ON-state resistance (ron
)
ON-state resistance match (∆ron
ON-state resistance flatness (ron(flat)
Turn-on/turn-off time (tON/tOFF
)
0.1 Ω
)
0.15 Ω
)
20 ns/15 ns
12 ns
Break-before-make time (tBBM
Charge injection (QC)
Bandwidth (BW)
)
36 pC
100 MHz
–65 dB at 1 MHz
–66 dB at 1 MHz
0.01%
OFF isolation (OISO
Crosstalk (XTALK
)
)
Total harmonic distortion (THD)
Leakage current (INO(OFF)/(INC(OFF)
Package option
)
±20 nA
6-pin DBV
(1) V+ = 5 V and TA = 25°C
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2006, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
ORDERING INFORMATION
TA
PACKAGE(1)
ORDERABLE PART NUMBER
TS5A3159MDBVREP
TOP-SIDE MARKING
–55°C to 125°C
SOT (SOT-23) – DBV Tape and reel
JA8R
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
IN
L
ON
OFF
ON
H
OFF
Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
6.5
UNIT
V+
Supply voltage range(2)
Analog voltage range(2)(3)(4)
Analog port diode current
On-state switch current
–0.5
V
VNO
VCOM
–0.5
V+ + 0.5
±50
V
II/OK
VNO, VCOM < 0 or VNO, VCOM > V+
VNO, VCOM = 0 to V+
mA
mA
INO
ICOM
±200
On-state peak switch current(5)
Digital input voltage range(2)(3)
Digital input clamp current
±400
6.5
mA
V
VIN
IIK
–0.5
–65
VIN < 0
–50
±100
165
150
mA
mA
°C/W
°C
Continuous current through V+ or GND
Package thermal impedance(6)
Storage temperature range
θJA
Tstg
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "Electrical Characteristics" is
not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4) This value is limited to 5.5 V maximum.
(5) Pulse at 1-ms duration < 10% duty cycle.
(6) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 5-V Supply
V+ = 4.5 V to 5.5 V (5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER SYMBOL
Analog Switch
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX UNIT
Analog signal
range
VCOM
VNC, VNO
,
0
V+
V
25°C
Full
1
1.5
1.5
1.1
1.3
Peak ON
resistance
0 ≤ VNO or VNC ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 11
rpeak
4.5 V
4.5 V
Ω
25°C
Full
0.75
ON-state
resistance
VNO or VNC = 2.5 V,
ICOM = –30 mA,
Switch ON,
See Figure 11
ron
Ω
Ω
ON-state
resistance
match
between
channels
VNO or VNC = 2.5 V,
ICOM = –30 mA,
Switch ON,
See Figure 11
∆ron
25°C
25°C
4.5 V
4.5 V
0.1
0 ≤ VNO or VNC ≤ V+,
ICOM = –30 mA
0.233
0.15
ON-state
resistance
flatness
Switch ON,
See Figure 11
ron(flat)
Ω
VNO or VNC = 1 V, 1.5 V, 2.5 V,
ICOM = –30 mA
NC, NO
OFF leakage
current
25°C
Full
–6
–20
–6
0.2
4
60
4
INC(OFF)
INO(OFF) VCOM = 0,
,
VNC or VNO = 4.5 V,
Switch OFF,
See Figure 12
5.5 V
5.5 V
5.5 V
nA
nA
nA
NC, NO
ON leakage
current
25°C
Full
2.8
INC(ON)
,
VNC or VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 13
INO(ON)
–40
–4
70
7
COM
ON leakage
current
25°C
Full
0.47
VNC or VNO = 4.5 V or Open,
VCOM = 4.5 V,
Switch ON,
See Figure 13
ICOM(ON)
–40
80
Digital Control Input (IN)
Input logic
high
VIH
Full
2.4
0
5.5
0.8
1
V
V
Input logic low
VIL
Full
Full
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
5.5 V
–1
µA
(1) TA = 25°C
3
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V (5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER SYMBOL
Dynamic
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX UNIT
25°C
Full
20
15
35
ns
40
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
4.5 V to
5.5 V
Turn-on time
Turn-off time
tON
tOFF
tBBM
25°C
Full
20
ns
35
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
4.5 V to
5.5 V
25°C
Full
1
1
12
14.5
ns
Break-before-
make time
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
4.5 V to
5.5 V
Charge
injection
CL = 1 nF,
VGEN = 0 V,
QC
See Figure 20
See Figure 14
25°C
5 V
5 V
36
23
pC
pF
NC, NO
OFF
capacitance
CNC(OFF)
,
VNC or VNO = V+ or GND,
CNO(OFF) Switch OFF,
25°C
NC, NO
ON
capacitance
CNC(ON)
CNO(ON) Switch ON,
,
VNC or VNO = V+ or GND,
See Figure 14
See Figure 14
25°C
25°C
5 V
5 V
84
84
pF
pF
COM
ON
capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
Digital input
capacitance
CIN
BW
VIN = V+ or GND,
See Figure 14
See Figure 17
25°C
25°C
25°C
25°C
25°C
5 V
5 V
5 V
5 V
5 V
2.1
100
–65
–65
0.01
pF
MHz
dB
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
OISO
XTALK
THD
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
dB
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to 20 kHz,
See Figure 21
%
Supply
Positive supply
current
I+
VIN = V+ or GND,
Switch ON or OFF
Full
5.5 V
0.1
µA
4
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 3.3-V Supply
V+ = 3 V to 3.6 V (3.3 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX
UNIT
Analog signal
range
VCOM
VNC, VNO
,
0
V+
V
25°C
Full
1.35
2.15
2.15
1.7
Peak ON
resistance
0 ≤ VNO or VNC ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 11
rpeak
3 V
3 V
Ω
25°C
Full
1.15
ON-state
resistance
VNO or VNC = 2 V,
ICOM = –24 mA,
Switch ON,
See Figure 11
ron
Ω
Ω
1.7
ON-state
resistance
match
between
channels
VNO or VNC = 2 V, 0.8 V,
ICOM = –24 mA,
Switch ON,
See Figure 11
∆ron
25°C
25°C
3 V
3 V
0.11
0 ≤ VNO or VNC ≤ V+,
ICOM = –24 mA
0.225
0.25
ON-state
resistance
flatness
Switch ON,
See Figure 11
ron(flat)
Ω
VNO or VNC = 2 V, 0.8 V,
ICOM = –24 mA
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
VNC or VNO = 3 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C
25°C
25°C
3.6 V
3.6 V
3.6 V
0.2
2.8
nA
nA
nA
NC, NO
ON leakage
current
INC(ON)
INO(ON)
,
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 13
COM
ON leakage
current
VNC or VNO = 3 V or Open,
VCOM = 3 V,
Switch ON,
See Figure 13
ICOM(ON)
0.47
Digital Control Input (IN)
Input logic high
Input logic low
VIH
VIL
Full
Full
2
5.5
1
V
V
0
0.6
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
Full
3.6 V
–1
µA
(1) TA = 25°C
5
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V (3.3 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX
UNIT
25°C
Full
30
20
40
55
25
40
29
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
3 V to
3.6 V
Turn-on time
Turn-off time
tON
ns
ns
25°C
Full
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
3 V to
3.6 V
tOFF
25°C
Full
1
1
21
Break-before-
make time
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
3 V to
3.6 V
tBBM
QC
CNC(OFF)
ns
CL = 1 nF,
VGEN = 0 V,
Charge injection
See Figure 20
See Figure 14
25°C
3.3 V
3.3 V
20
23
pC
NC, NO
OFF
capacitance
,
VNC or VNO = V+ or GND,
CNO(OFF) Switch OFF,
25°C
pF
NC, NO
ON capacitance
CNC(ON)
CNO(ON) Switch ON,
,
VNC or VNO = V+ or GND,
See Figure 14
See Figure 14
See Figure 14
See Figure 17
25°C
25°C
25°C
25°C
25°C
25°C
25°C
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
3.3 V
84
84
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
CIN
Digital input
capacitance
VIN = V+ or GND,
2.1
pF
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
100
–65
–65
0.015
MHz
dB
dB
%
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
OISO
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
XTALK
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to 20 kHz,
See Figure 21
Supply
Positive supply
current
I+
VIN = V+ or GND,
Switch ON or OFF
Full
3.6 V
0.1
µA
6
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 2.5-V Supply
V+ = 2.3 V to 2.7 V (2.5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX
UNIT
Analog signal
range
VCOM
VNC, VNO
,
0
V+
V
25°C
Full
1.7
2.7
2.9
2.3
2.5
Peak ON
resistance
0 ≤ VNO or VNC ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 11
rpeak
2.5 V
2.5 V
Ω
25°C
Full
1.45
ON-state
resistance
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 11
ron
Ω
Ω
ON-state
resistance
match
between
channels
VNO or VNC = 0.8 V, 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 11
∆ron
25°C
25°C
2.5 V
2.5 V
0.7
0 ≤ VNO or VNC ≤ V+,
ICOM = –8 mA
0.5
ON-state
resistance
flatness
Switch ON,
See Figure 11
ron(flat)
Ω
VNO or VNC = 0.8 V, 1.8 V,
ICOM = –8 mA
0.45
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
VNC or VNO = 2.3 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C
25°C
25°C
2.7 V
2.7 V
2.7 V
0.2
2.8
nA
nA
nA
NC, NO
ON leakage
current
INC(ON)
INO(ON)
,
VNC or VNO = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 13
COM
ON leakage
current
VNC or VNO = 2.3 V or Open, Switch ON,
VCOM = 2.3 V,
ICOM(ON)
0.47
See Figure 13
Digital Control Input (IN)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.8
5.5
1
V
V
0
0.6
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
Full
2.7 V
–1
µA
(1) TA = 25°C
7
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V (2.5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX
UNIT
25°C
Full
40
30
55
70
40
55
39
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
2.3 V to
2.7 V
Turn-on time
Turn-off time
tON
ns
ns
25°C
Full
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
2.3 V to
2.7 V
tOFF
25°C
Full
1
1
33
Break-before-
make time
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
2.3 V to
2.7 V
tBBM
QC
CNC(OFF)
ns
CL = 1 nF,
VGEN = 0 V,
Charge injection
See Figure 20
See Figure 14
25°C
2.5 V
2.5 V
13
23
pC
NC, NO
OFF
capacitance
,
VNC or VNO = V+ or GND,
CNO(OFF) Switch OFF,
25°C
pF
NC, NO
ON capacitance
CNC(ON)
CNO(ON) Switch ON,
,
VNC or VNO = V+ or GND,
See Figure 14
See Figure 14
See Figure 14
See Figure 17
25°C
25°C
25°C
25°C
25°C
25°C
25°C
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
2.5 V
84
84
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
CIN
Digital input
capacitance
VIN = V+ or GND,
2.1
pF
RL = 50 Ω,
Switch ON,
Bandwidth
OFF isolation
Crosstalk
BW
100
–64
–64
0.025
MHz
dB
dB
%
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
OISO
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
XTALK
THD
Total harmonic
distortion
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to 20 kHz,
See Figure 21
Supply
Positive supply
current
I+
VIN = V+ or GND,
Switch ON or OFF
Full
2.7 V
0.1
µA
8
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 1.8-V Supply
V+ = 1.65 V to 1.95 V (1.8 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
Analog Switch
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX UNIT
Analog signal
range
VCOM
VNC, VNO
,
0
V+
V
25°C
Full
4
7
4.9
Peak ON
resistance
0 ≤ VNO or VNC ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 11
rpeak
1.8 V
1.8 V
Ω
25°C
Full
1.7
3.2
4.2
ON-state
resistance
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 11
ron
Ω
Ω
ON-state
resistance
match
between
channels
25°C
0.7
0.7
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 11
∆ron
1.8 V
1.8 V
Full
25°C
Full
1.85
1.85
0.9
0 ≤ VNO or VNC ≤ V+,
ICOM = –2 mA
ON-state
resistance
flatness
Switch ON,
See Figure 11
ron(flat)
Ω
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA
25°C
Full
0.9
NC, NO
OFF leakage
current
INC(OFF)
INO(OFF)
,
VNC or VNO = 1.65 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C
25°C
25°C
1.95 V
1.95 V
1.95 V
0.2
2.8
nA
nA
nA
NC, NO
ON leakage
current
INC(ON)
INO(ON)
,
VNC or VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 13
COM
ON leakage
current
VNC or VNO = 1.65 V or
Switch ON,
See Figure 13
ICOM(ON) Open,
VCOM = 1.65 V,
0.47
Digital Control Input (IN)
Input logic high
Input logic low
VIH
VIL
Full
Full
1.5
5.5
1
V
V
0
0.6
Input leakage
current
IIH, IIL
VI = 5.5 V or 0
Full
1.95 V
–1
µA
(1) TA = 25°C
9
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
Electrical Characteristics for 1.8-V Supply (continued)
V+ = 1.65 V to 1.95 V (1.8 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
Dynamic
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP(1)
MAX UNIT
25°C
Full
65
40
70
ns
95
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
1.65 V to
1.95 V
Turn-on time
Turn-off time
tON
25°C
Full
55
ns
70
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
1.65 V to
1.95 V
tOFF
25°C
Full
1
60
72
ns
Break-before-
make time
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
1.65 V to
1.95 V
tBBM
QC
CNC(OFF)
0.5
CL = 1 nF,
VGEN = 0 V,
Charge injection
See Figure 20
See Figure 14
25°C
1.8 V
1.8 V
13
23
pC
pF
NC, NO
OFF
capacitance
,
VNC or VNO = V+ or GND,
CNO(OFF) Switch OFF,
25°C
NC, NO
ON capacitance
CNC(ON)
CNO(ON) Switch ON,
,
VNC or VNO = V+ or GND,
See Figure 14
See Figure 14
See Figure 14
See Figure 17
25°C
25°C
25°C
25°C
25°C
25°C
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
1.8 V
84
84
pF
pF
COM
ON capacitance
VCOM = V+ or GND,
Switch ON,
CCOM(ON)
CIN
Digital input
capacitance
VIN = V+ or GND,
2.1
pF
RL = 50 Ω,
Switch ON,
Bandwidth
BW
100
–63
–63
MHz
dB
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
Crosstalk
XTALK
dB
Supply
Positive supply
current
I+
VIN = V+ or GND,
Switch ON or OFF
Full
1.95 V
0.1
µA
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
TYPICAL PERFORMANCE
3.5
T
1.6
V
= 3 V
+
= 255C
A
1.4
1.2
1
3
2.5
2
T
= 85°C
A
T
A
= 25°C
V
= 1.8 V
+
T
A
= −40°C
V
= 2.5 V
+
0.8
0.6
0.4
0.2
0
1.5
1
V
= 3 V
+
V
= 4.5 V
0.5
0
+
0
1
2
3
4
0
1
2
3
V
(V)
COM
V
(V)
COM
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM
18
16
14
12
10
8
1.2
V
= 4.5 V
V
= 5 V
+
+
1
T
A
= 85°C
0.8
T
= 25°C
A
0.6
0.4
I
I
NC(ON)
T
A
= −40°C
6
COM(ON)
4
I
NO(ON)
0.2
0
2
I
NO(OFF)
−20
I
NC(OFF)
0
0
1
2
3
4
−40
0
20
40
60
80
100
V
(V)
COM
Temperature (°C)
Figure 3. ron vs VCOM
Figure 4. Leakage Current vs Temperature
50
20
V
T
A
= V
+
= 25°C
COM
t
t
= 2.5 ns
= 2.5 ns
r
t
< 20 ns
< 20 ns
V
= 5 V
r
18
16
14
12
10
8
+
f
t
f
40
30
20
10
0
6
4
2
0
−40
−20
0
20
40
60
80
100
0
1
2
3
4
5
6
Temperature (°C)
Supply Voltage (V)
Figure 5. tON/tOFF vs V+
Figure 6. tON/tOFF vs Temperature
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
TYPICAL PERFORMANCE (continued)
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
0
2.5
2
OFF Isolation
−1
V
t+
Bandwidth
−2
−3
−4
Crosstalk
V
1.5
t–
−5
−6
1
0.5
0
−7
−8
−9
1.5
2
2.5
3
3.5
4
4.5
5
0.1
1
10
Frequency (MHz)
100
1K
Power Supply (V)
Figure 7. Logic Threshold vs Power Supply
Figure 8. Frequency Response
14
12
10
8
0.035
V
= 5 V
+
V
= 3 V
+
0.030
0.025
0.020
0.015
0.010
0.005
0
6
4
2
0
10
100
1K
10K
100K
−40
−20
0
20
40
60
80
100
Frequency (MHz)
Temperature (°C)
Figure 9. Power-Supply Current vs Temperature
Figure 10. Total Harmonic Distortion (THD) vs Frequency
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
PIN DESCRIPTION
PIN
NO.
NAME
DESCRIPTION
1
2
3
4
5
6
NO
GND
NC
Normally open
Digital ground
Normally closed
Common
COM
V+
Power supply
IN
Digital control to connect COM to NO or NC
PARAMETER DESCRIPTION
SYMBOL
VCOM
VNC
DESCRIPTION
Voltage at COM
Voltage at NC
Voltage at NO
VNO
ron
Resistance between COM and NO ports when the channel is ON
Peak on-state resistance over a specified voltage range
rpeak
∆ron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INC(OFF)
INO(OFF)
INC(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
ICOM(ON)
VIH
VIL
Minimum input voltage for logic high for the control input (IN)
Maximum input voltage for logic low for the control input (IN)
Voltage at IN
VIN
IIH, IIL
Leakage current measured at IN
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tON
tOFF
tBBM
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO), when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL×∆ VCOM, CL is the load capacitance and ∆VCOM is the change in analog output voltage.
QC
CNC(OFF)
CNO(OFF)
CNC(ON)
CNO(ON)
CCOM(ON)
CIN
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
Capacitance of IN
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
OISO
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2).
This is measured in a specific frequency and in dB.
XTALK
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
PARAMETER DESCRIPTION (continued)
SYMBOL
DESCRIPTION
I+
Static power-supply current with the control (IN) pin at V+ or GND
∆I+
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
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PARAMETER MEASUREMENT INFORMATION
V
+
V
NC
NO
NC
COM
V
COM
+
Channel ON
V
NO
VCOM * VNO or VNC
r
+
W
on
ICOM
I
COM
V
I
IN
V = V or V
IL
I
IH
+
GND
Figure 11. ON-State Resistance (ron)
V
+
V
NC
NO
NC
COM
V
COM
+
OFF-State Leakage Current
Channel OFF
V
NO
V = V or V
IL
I
IH
V
I
IN
+
GND
Figure 12. OFF-State Leakage Current (INC(OFF), INO(OFF)
)
V
+
V
V
NC
NC
COM
ON-State Leakage Current
Channel ON
V = V or V
V
COM
+
NO
IN
NO
I
IH
IL
V
I
NOTE: See electrical characteristics for test conditions.
+
GND
Figure 13. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON)
)
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
V
V
COM
COM
Capacitance
Meter
V
= V or GND
+
BIAS
NC
NO
NC
V = V or V
I IL
IH
V
NO
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
V
BIAS
IN
V
I
GND
Figure 14. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON)
)
V
+
TEST
R
L
C
L
V
COM
V
NC
or V
NC or NO
NC or NO
NO
t
50 Ω
50 Ω
35 pF
35 pF
V
ON
+
+
COM
IN
V
COM
(2)
C
L
R
L
t
V
OFF
V
I
V
0
Logic
Input
(V )
I
+
(2)
C
L
R
L
50%
50%
Logic
(1)
GND
Input
t
ON
t
OFF
Switch
Output
90%
90%
(V or V
)
NO
NC
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
CL includes probe and jig capacitance.
Figure 15. Turn-On (tON) and Turn-Off Time (tOFF
)
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
V
0
Logic
Input
(V )
I
+
V
NC
or V
NO
50%
90%
NC or NO
NC or NO
V
COM
COM
Switch
Output
90%
(2)
C
R
L
L
(V
)
COM
IN
V
I
t
BBM
Logic
(1)
V
or V = V /2
NO +
NC
GND
Input
R = 50 Ω
L
C = 35 pF
L
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
CL includes probe and jig capacitance.
Figure 16. Break-Before-Make Time (tBBM
)
V
+
Network Analyzer
50 W
V
NC
NC
NO
Channel ON: NC to COM
V = V or V
V
COM
COM
I
IH
IL
Source
Signal
Network Analyzer Setup
V
IN
Source Power = 0 dBM
(632-mV P-P at 50-W load)
I
50 W
+
GND
DC Bias = 350 mV
Figure 17. Bandwidth (BW)
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V
+
Network Analyzer
Channel OFF: NC to COM
V = V or V
50 W
V
NC
NO
IN
NC
I
IH
IL
V
COM
COM
Source
Signal
50 W
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-W load)
V
I
50 W
+
GND
DC Bias = 350 mV
Figure 18. OFF Isolation (OISO
)
V
+
Network Analyzer
Channel ON: NC to COM
Channel OFF: NO to COM
V = V or V
50 W
V
V
NC
NC
V
COM
I
IH
IL
Source
Signal
NO
IN
NO
+
Network Analyzer Setup
50 W
V
I
50 W
Source Power = 0 dBM
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 19. Crosstalk (XTALK
)
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SCDS217B–DECEMBER 2005–REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V
IH
V
+
Logic
Input
(V
I)
OFF
ON
OFF
V
IL
R
GEN
NC or NO
NC or NO
COM
V
COM
+
V
COM
∆V
COM
V
GEN
(2)
C
L
V
= 0 to V
= 0
GEN
+
V
I
IN
R
GEN
C = 0.1 nF
L
Logic
(1)
GND
Q = C × ∆V
C L COM
Input
V = V or V
IL
I
IH
(1)
(2)
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
CL includes probe and jig capacitance.
Figure 20. Charge Injection (QC)
Channel ON: COM to NC
= V P-P
V
SOURCE
+
V /2
+
V = V or V
I
IH
IL
V
+
f
= 600 Hz to 20 kHz
SOURCE
R
L
10 mF
R = 600 Ω
L
NC
NO
C = 50 pF
L
10 mF
Analyzer
V
O
COM
IN
(1)
C
L
V
R
L
V
I
SOURCE
+
GND
(1)
CL includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
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PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
TS5A3159MDBVREP
V62/06613-01XE
Status (1)
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOT-23
DBV
6
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SOT-23
DBV
6
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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