TS5N412PWRG4 [TI]

4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH; 4位1 - OF- 2 FET复用器/解复用器高带宽总线开关
TS5N412PWRG4
型号: TS5N412PWRG4
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH
4位1 - OF- 2 FET复用器/解复用器高带宽总线开关

解复用器 开关 复用器或开关 信号电路 光电二极管
文件: 总18页 (文件大小:453K)
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TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
FEATURES  
APPLICATIONS  
PCI Interface  
Low and Flat ON-State Resistance (ron)  
Characteristics Over Operating Range  
(ron = 3 Typ)  
Differential Signal Interface  
Memory Interleaving  
Bus Isolation  
0- to 10-V Switching on Data I/O Ports  
Bidirectional Data Flow With Near-Zero  
Propagation Delay  
Low-Distortion Signal Gating  
DBQ OR PW PACKAGE  
(TOP VIEW)  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
(Cio(OFF) = 20 pF Max, B Port)  
V
OE  
S
1B1  
1B2  
1A  
2B1  
2B2  
2A  
1
2
3
4
5
6
7
8
16  
15  
CC  
VCC Operating Range From 4.75 V to 5.25 V  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
14 4B1  
13 4B2  
12 4A  
ESD Performance Tested Per JESD 22  
11 3B1  
– 2000-V Human-Body Model  
(A114-B, Class II)  
10  
9
3B2  
3A  
GND  
– 1000-V Charged-Device Model (C101)  
Supports Both Digital and Analog  
Applications  
DESCRIPTION/ORDERING INFORMATION  
The TS5N412 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass  
transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for  
minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also  
features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.  
Specifically designed to support high-bandwidth applications, the TS5N412 provides an optimized interface  
solution ideally suited for broadband communications, networking, and data-intensive computing systems.  
The TS5N412 is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S)  
inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is  
enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is  
high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging  
current backflow through the device when it is powered down. The device has isolation during power off.  
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup  
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.  
ORDERING INFORMATION  
TA  
PACKAGE(1)  
SSOP (QSOP) – DBQ  
TSSOP – PW  
ORDERABLE PART NUMBER  
TS5N412DBQR  
TOP-SIDE MARKING  
YB412  
Tape and reel  
Tape and reel  
–40°C to 85°C  
TS5N412PWR  
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
FUNCTION TABLE  
INPUTS  
INPUT/OUTPUT  
A
FUNCTION  
OE  
L
S
L
B1  
B2  
Z
A port = B1 port  
A port = B2 port  
Disconnect  
L
H
X
H
LOGIC DIAGRAM (POSITIVE LOGIC)  
4
7
2
3
5
6
1A  
2A  
1B1  
SW  
1B2  
2B1  
SW  
SW  
2B2  
SW  
9
11  
10  
3A  
4A  
3B1  
3B2  
SW  
SW  
12  
14  
13  
4B1  
4B2  
SW  
SW  
1
S
15  
OE  
2
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
SIMPLIFIED SCHEMATIC, EACH FET SWITCH (SW)  
A
B
V
CC  
Charge  
Pump  
(1)  
EN  
(1) EN is the internal enable signal applied to the switch.  
Absolute Maximum Ratings(1)  
over operating free-air temperature range (unless otherwise noted)  
MIN  
–0.5  
–0.5  
–0.5  
MAX  
7
UNIT  
V
VCC  
VIN  
VI/O  
II/O  
Supply voltage range  
Control input voltage range(2)(3)  
Switch I/O voltage range(2)(3)(4)  
ON-state switch current(5)  
7
V
11  
V
±100  
±100  
90  
mA  
mA  
Continuous current through VCC or GND  
DBQ package  
PW package  
θJA  
Package thermal impedance(6)  
Storage temperature range  
°C/W  
°C  
108  
150  
Tstg  
–65  
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating  
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) All voltages are with respect to ground, unless otherwise specified.  
(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.  
(4) VI and VO are used to denote specific conditions for VI/O  
(5) II and IO are used to denote specific conditions for II/O  
.
.
(6) The package thermal impedance is calculated in accordance with JESD 51-7.  
Recommended Operating Conditions(1)  
MIN  
4.75  
2
MAX UNIT  
VCC  
VIH  
VIL  
Supply voltage  
5.25  
5.25  
0.8  
10  
V
V
High-level control input voltage  
Low-level control input voltage  
Data input/output voltage  
Operating free-air temperature  
0
V
VI/O  
TA  
0
V
–40  
85  
°C  
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
3
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
Electrical Characteristics(1)  
over recommended operating free-air temperature range, (unless otherwise noted)  
PARAMETER  
Control inputs  
TEST CONDITIONS  
MIN TYP(2)  
MAX  
10  
UNIT  
µA  
IIN  
VCC = 5.25 V,  
VCC = 5.25 V,  
VCC = 0 V,  
VIN = 0 to VCC  
VO = 0 to 10 V,  
VI = 0,  
Switch OFF,  
VIN = VCC or GND  
10  
10  
10  
10  
35  
(3)  
IOZ  
µA  
VO = Open,  
VI = 0 to 10 V  
II/O = 0,  
Switch ON or OFF,  
ICC  
Cin  
VCC = 5.25 V,  
VCC = 5 V,  
VIN = VCC or GND  
mA  
pF  
Control inputs  
A port  
VIN = 10 V or 0  
Switch OFF,  
VIN = VCC or GND,  
VCC = 5 V,  
VI/O = 10 V or 0  
VI/O = 10 V or 0  
VI/O = 10 V or 0  
Cio(OFF)  
pF  
Switch OFF,  
VIN = VCC or GND,  
B port  
VCC = 5 V,  
VCC = 5 V,  
20  
80  
Switch ON,  
VIN = VCC or GND,  
Cio(ON)  
pF  
VI = 0,  
IO = 50 mA  
IO = –50 mA  
IO = –50 mA  
3
7.5  
7.5  
VCC = 4.75 V,  
TYP at VCC = 5 V  
(4)  
ron  
VI = 8 V,  
VI = 10 V,  
12.5  
(1) VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins  
(2) All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C.  
(3) For I/O ports, the parameter IOZ includes the I/O leakage current.  
(4) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is  
determined by the lower of the voltages of the two (A or B) terminals.  
Switching Characteristics  
over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)  
VCC = 5 V  
± 0.25 V  
FROM  
(INPUT)  
TO  
(OUTPUT)  
PARAMETER  
UNIT  
MIN MAX  
(1)  
tpd  
A or B  
S
B or A  
A
3
200  
200  
200  
200  
200  
ns  
ns  
tpd(s)  
ten  
S
B
ns  
ns  
OE  
S
A or B  
B
tdis  
OE  
A or B  
(1) The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load  
capacitance, when driven by an ideal voltage source (zero output impedance).  
Dynamic Characteristics  
over recommended operating free-air temperature range, VCC = 5 V ± 5% (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN TYP(1) MAX  
UNIT  
Bandwidth (BW)(2) RL = 50 , VI = 0.632 V (P-P),  
See Figure 4  
25  
MHz  
OFF isolation  
RL = 50 , VI = 0.632 V (P-P),  
f = 25 MHz,  
f = 25 MHz,  
See Figure 5  
See Figure 6 and Figure 7  
–50  
–50  
dB  
dB  
(OISO  
)
Crosstalk (XTALK  
)
RL = 50 , VI = 0.632 V (P-P),  
(1) All typical values are at VCC = 5 V (unless otherwise noted), TA = 25°C.  
(2) Bandwidth is the frequency at which the gain is –3 dB below the DC gain.  
4
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
TYPICAL PERFORMANCE  
6
5
4
3
2
1
0
T
A
= 25°C  
0
1
2
3
4
5
6
7
8
9
10  
V − V  
I
Figure 1. Typical ron vs VI, VCC = 5 V and IO = –50 mA  
0
0
−1  
−2  
−3  
−4  
−5  
−6  
Gain  
−10  
−20  
−30  
−40  
−50  
−60  
Phase  
0.1  
1
10  
100  
500  
f − Frequency − MHz  
Figure 2. Frequency Response vs Bandwidth  
5
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
TYPICAL PERFORMANCE  
140  
120  
100  
80  
0
−20  
Phase  
Gain  
−40  
60  
−60  
40  
20  
−80  
0
−20  
−40  
−60  
−100  
−120  
100  
0.1  
1
10  
f − Frequency − MHz  
500  
Figure 3. Frequency Response vs OFF Isolation  
160  
140  
120  
100  
80  
0
−20  
Phase  
Gain  
−40  
−60  
60  
−80  
40  
−100  
−120  
20  
0
0.1  
1
10  
100  
500  
f − Frequency − MHz  
Figure 4. Frequency Response vs Crosstalk  
6
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
Input Generator  
V
IN  
50 Ω  
50 Ω  
V
G1  
TEST CIRCUIT  
DUT  
2 y V  
CC  
Input Generator  
50 Ω  
S1  
Open  
GND  
R
L
V
I
V
O
50 Ω  
V
G2  
C
L
R
L
(see Note A)  
S1  
Open  
V
I
C
V
R
V
TEST  
L
L
CC  
t
5 V ± 0.25 V  
5 V ± 0.25 V  
5 V ± 0.25 V  
100 Ω  
100 Ω  
100 Ω  
V
CC  
35 pF  
35 pF  
35 pF  
pd(s)  
t
/t  
2 y V  
GND  
0.3 V  
0.3 V  
PLZ PZL  
CC  
t
/t  
GND  
V
CC  
PHZ PZH  
t
is measured with Demux inputs at opposite voltage levels, i.e. V = 5 V, V = GND.  
B1 B2  
pds  
Output  
Control  
V
CC  
V /2  
CC  
V /2  
CC  
(V )  
IN  
0 V  
t
t
PLZ  
PZL  
Output  
Waveform 1  
V
V
OH  
Output  
Control  
(V  
V
CC  
V /2  
CC  
S1 at 2 × V  
V + V  
OL  
V /2  
CC  
V /2  
CC  
CC  
)
(see Note B)  
IN  
OL  
0 V  
t
t
PZH  
PHZ  
t
t
PLH  
PHL  
Output  
Waveform 2  
S1 at GND  
V
OH  
V
V
OH  
V
OH  
− V  
V /2  
CC  
Output  
V /2  
CC  
V /2  
CC  
0 V  
(see Note B)  
OL  
VOLTAGE WAVEFORMS  
PROPAGATION DELAY TIMES (t  
VOLTAGE WAVEFORMS  
ENABLE AND DISABLE TIMES  
)
pd(s)  
NOTES: A. C includes probe and jig capacitance.  
L
B. Waveform 1 is for an output with internal conditions such that the output is low, except when disabled by the output control.  
Waveform 2 is for an output with internal conditions such that the output is high, except when disabled by the output control.  
C. All input pulses are supplied by generators having the following characteristics: PRR 10 MHz, Z = 50 , t < 25 ns, t < 25 ns.  
O
r
f
D. The outputs are measured one at a time, with one transition per measurement.  
E.  
F.  
G.  
t
t
t
and t  
and t  
and t  
are the same as t  
.
dis  
.
PLZ  
PZL  
PLH  
PHZ  
PZH  
PHL  
are the same as t  
en  
are the same as t  
. The tpd propagation delay is the calculated RC time constant of the typical ON-state resistance  
pd(s)  
of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).  
H. All parameters and waveforms are not applicable to all devices.  
Figure 5. Test Circuit and Voltage Waveforms  
7
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
PARAMETER MEASUREMENT INFORMATION  
V
CC  
Network Analyzer  
50 W  
B1  
B2  
Channel ON: B1 to A  
A
Network Analyzer Setup  
Source  
Signal  
Source Power = 0 dBM  
(632-mV P-P at 50-W load)  
GND  
DC Bias = 350 mV  
50 W  
Figure 6. Bandwidth (BW)  
V
CC  
Network Analyzer  
50 W  
B1  
B2  
Channel OFF: B2 to A  
A
Source  
Signal  
Network Analyzer Setup  
50 W  
Source Power = 0 dBM  
GND  
(632-mV P-P at 50-W load)  
50 W  
DC Bias = 350 mV  
Figure 7. OFF Isolation (OISO  
)
V
CC  
Network Analyzer  
50 W  
B1  
B2  
Channel ON: B1 to A  
Channel OFF: B2 to A  
A
Source  
Signal  
Network Analyzer Setup  
50 W  
Source Power = 0 dBM  
GND  
(632-mV P-P at 50-W load)  
50 W  
DC Bias = 350 mV  
Figure 8. Crosstalk (XTALK  
)
8
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
PARAMETER MEASUREMENT INFORMATION (continued)  
V
+
Network Analyzer  
50 W  
Channel ON: 1B1 to 1A,  
2B1 to 2A  
1B1  
2B1  
1A  
2A  
Source  
Signal  
Network Analyzer Setup  
50 W  
Source Power = 0 dBM  
(632 mV P-P at 50 W load)  
50 W  
DC Bias = 350 mV  
GND  
Figure 9. Adjacent Channel Crosstalk (XTALK  
)
9
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
MECHANICAL DATA  
DBQ (R-PDSO-G**)  
0.012 (0,30)  
0.008 (0,20)  
0.025 (0,64)  
24  
0.005 (0,13)  
13  
0.157 (3,99) 0.244 (6,20)  
0.008 (0,20) NOM  
0.150 (3,81)  
0.228 (5,80)  
Gauge Plane  
1
12  
A
0.010 (0,25)  
0°−8°  
0.035 (0,89)  
0.016 (0,40)  
0.069 (1,75) MAX  
Seating Plane  
0.004 (0,10)  
0.010 (0,25)  
0.004 (0,10)  
PINS **  
16  
20  
24  
28  
DIM  
0.197  
(5,00)  
0.344  
(8,74)  
0.344  
(8,74)  
0.394  
(10,01)  
A MAX  
0.189  
(4,80)  
0.337  
(8,56)  
0.337  
(8,56)  
0.386  
(9,80)  
A MIN  
M0−137  
VARIATION  
D
AB  
AD  
AE  
AF  
4073301/F 02/2002  
NOTES: A. All linear dimensions are in inches (millimeters).  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion not to exceed 0.006 (0,15).  
D. Falls within JEDEC MO−137.  
10  
TS5N412  
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER  
HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS207AUGUST 2005  
MECHANICAL DATA  
PW (R-PDSO-G**)  
14 PINS SHOWN  
0,30  
0,19  
M
0,10  
0,65  
14  
8
0,15 NOM  
4,50  
4,30  
6,60  
6,20  
Gage Plane  
0,25  
1
7
0°ā8°  
A
0,75  
0,50  
Seating Plane  
0,10  
0,15  
0,05  
1,20 MAX  
PINS **  
8
14  
16  
20  
24  
28  
DIM  
3,10  
2,90  
5,10  
4,90  
5,10  
4,90  
6,60  
6,40  
7,90  
7,70  
9,80  
9,60  
A MAX  
A MIN  
4040064/F 01/97  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.  
D. Falls within JEDEC MO-153  
11  
PACKAGE OPTION ADDENDUM  
www.ti.com  
24-May-2007  
PACKAGING INFORMATION  
Orderable Device  
TS5N412DBQR  
TS5N412DBQRE4  
TS5N412DBQRG4  
TS5N412PW  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
SSOP/  
QSOP  
DBQ  
16  
16  
16  
16  
16  
16  
16  
16  
16  
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SSOP/  
QSOP  
DBQ  
DBQ  
PW  
PW  
PW  
PW  
PW  
PW  
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
SSOP/  
QSOP  
2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR  
no Sb/Br)  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
TSSOP  
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS5N412PWE4  
TS5N412PWG4  
TS5N412PWR  
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
90 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
TS5N412PWRE4  
TS5N412PWRG4  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is  
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the  
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take  
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI  
to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
30-Jul-2010  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TS5N412PWR  
TSSOP  
PW  
16  
2000  
330.0  
12.4  
6.9  
5.6  
1.6  
8.0  
12.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
30-Jul-2010  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
TSSOP PW 16  
SPQ  
Length (mm) Width (mm) Height (mm)  
346.0 346.0 29.0  
TS5N412PWR  
2000  
Pack Materials-Page 2  
MECHANICAL DATA  
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999  
PW (R-PDSO-G**)  
PLASTIC SMALL-OUTLINE PACKAGE  
14 PINS SHOWN  
0,30  
0,19  
M
0,10  
0,65  
14  
8
0,15 NOM  
4,50  
4,30  
6,60  
6,20  
Gage Plane  
0,25  
1
7
0°8°  
A
0,75  
0,50  
Seating Plane  
0,10  
0,15  
0,05  
1,20 MAX  
PINS **  
8
14  
16  
20  
24  
28  
DIM  
3,10  
2,90  
5,10  
4,90  
5,10  
4,90  
6,60  
6,40  
7,90  
9,80  
9,60  
A MAX  
A MIN  
7,70  
4040064/F 01/97  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.  
D. Falls within JEDEC MO-153  
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