TSM36A [TI]
具有 46V 钳位的 36V、1kV/42Ω TVS 浪涌保护二极管;型号: | TSM36A |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有 46V 钳位的 36V、1kV/42Ω TVS 浪涌保护二极管 二极管 电视 |
文件: | 总18页 (文件大小:1421K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TSM36A
ZHCSQN3A –JUNE 2022 –REVISED OCTOBER 2022
TSM36A 采用SOT-23 封装的浪涌保护器件
1 特性
3 说明
• 针对工业信号线的1.7kV 42ΩIEC 61000-4-5 浪涌
测试提供单向浪涌保护
• 强大的浪涌保护:
– IEC61000-4-5 (8/20µs):41 A
• 对于持续8/20µs 的25A 浪涌电流,钳位电压低至
50 V,可保护下游元件
• 工作电压为36V,用于保护24V 系统中的信号
• 1µA 低漏电流
TSM36A 是 TI 浪涌保护器件系列的一款产品。
TSM36A 可将高达 41A 的 IEC 61000-4-5 故障电流可
靠分流,从而保护系统免受高功率瞬态冲击或雷击。该
器件为满足常见的工业信号线路 EMC 要求提供了解决
方案,可通过 42Ω 电阻进行耦合的方式承受最高 1.7
kV IEC 61000-4-5 开路电压。TSM36A 在浪涌事件期
间进行钳制,确保系统在 I PP = 25A 时承受低于 50 V
的电压。
• 0.5Ω低动态电阻
此外,TSM36A 采用小型引线式 SOT-23 (DBZ) 封
装,尺寸大概比业界通用SMA 封装小50%。器件的漏
电流和电容都非常低,可有效减少保护线路所受影响。
• 集成4 级IEC 61000-4-2 ESD 保护
• 30kV ESD 保护(IEC 61000-4-2)
• SOT-23 (DBZ) 小型、标准、通用封装
• 引线式封装,用于自动光学检测(AOI)
更多有关浪涌系列其他器件的信息,请参阅该链接中的
产品。
2 应用
封装信息(1)
• 工业传感器
• IO link
• PLC I/O 模块
• 24V 电源线或数字输入或输出线
• 4/20mA 环路
• 电器
封装尺寸(标称值)
器件型号
TSM36A
封装
DBZ(SOT-23,3) 2.92mm × 1.30mm
(1) 如需了解所有可用封装,请参阅产品说明书末尾的可订购产品
附录。
• 医疗设备
• 电机驱动器
L+
TSM36A (x6)
0.1 µF
(A)
(A)
RX
TX
1
Application
(for example
MCU I/O)
2
IO Link
Transceiver
M12 Connector
4
CQ
3
(A)
L-
A. 该图所示为两个串联堆叠的TSM36A 单向器件,阳极背靠背连接,从而在各自信号之间实施保护。
工业传感器IO Link 应用
本文档旨在为方便起见,提供有关TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SLVSGX7
TSM36A
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ZHCSQN3A –JUNE 2022 –REVISED OCTOBER 2022
Table of Contents
7.4 Device Functional Modes............................................7
8 Application and Implementation....................................8
8.1 Application Information............................................... 8
8.2 Typical Application...................................................... 8
9 Power Supply Recommendations..................................9
10 Layout...........................................................................10
10.1 Layout Guidelines................................................... 10
10.2 Layout Example...................................................... 10
11 Device and Documentation Support.......................... 11
11.1 Documentation Support...........................................11
11.2 接收文档更新通知....................................................11
11.3 支持资源.................................................................. 11
11.4 Trademarks............................................................. 11
11.5 Electrostatic Discharge Caution.............................. 11
11.6 术语表......................................................................11
12 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings—JEDEC Specification...........................4
6.3 ESD Ratings—IEC Specification................................ 4
6.4 Recommended Operating Conditions.........................4
6.5 Thermal Information....................................................4
6.6 Electrical Characteristics.............................................5
6.7 Typical Characteristics................................................6
7 Detailed Description........................................................7
7.1 Overview.....................................................................7
7.2 Functional Block Diagram...........................................7
7.3 Feature Description.....................................................7
Information.................................................................... 11
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
Changes from Revision * (June 2022) to Revision A (October 2022)
Page
• 将数据表的状态从预告信息更改为量产数据..................................................................................................... 1
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5 Pin Configuration and Functions
GND
GND
1
2
3
IO
Not to scale
图5-1. DBZ Package,
3-Pin SOT-23
(Top View)
表5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
IO
3
I/O
G
Surge and ESD protected IO
Connect to ground. To achieve the rated performance, it is required to connect pin 1 and 2
together on the PCB as close to the device as possible.
GND
1, 2
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power
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6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted) (1)
Parameter
Device
MIN
MAX
UNIT
W
Ppk_8_20
Ipp_8_20
TA
IEC 61000-4-5 Power (tp - 8/20 µs)
IEC 61000-4-5 Current (tp - 8/20 µs)
Operating free-air temperature
Junction temperature
TSM36A
TSM36A
2000
41
A
150
150
155
°C
°C
°C
–55
–55
–65
TJ
Tstg
Storage temperature
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings—JEDEC Specification
Parameter
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001
± 2500
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JS-002
± 1000
6.3 ESD Ratings—IEC Specification
TA = 25°C (unless otherwise noted)
Parameter
VALUE
±30000
±30000
UNIT
IEC 61000-4-2 Contact Discharge, all pins
IEC 61000-4-2 Air-gap Discharge, all pins
V(ESD)
Electrostatic discharge
V
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Parameter
MIN
0
NOM
MAX
UNIT
V
VIN
TA
Input voltage
36
Operating free-air temperature
150
°C
–55
6.5 Thermal Information
TSM36A
THERMAL METRIC(1)
DBZ (SOT-23)
3 PINS
204.4
96.9
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
39.9
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
7.1
ΨJT
39.5
ΨJB
RθJC(bot)
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.6 Electrical Characteristics
TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Device
MIN
TYP
MAX
UNIT
VRWM
VBRF
Reverse stand-off voltage
TSM36A
0
36
V
Forward breakdown
voltage(1)
TSM36A
TSM36A
0.8
V
V
IIO = –10 mA
Reverse breakdown
voltage(1)
VBRR
IIO = 10 mA
37.8
44.2
IPP = 25A, tp = 8/20 µs, from IO to GND
IPP = 40 A, tp = 8/20 µs, from IO to GND
VIO = +36 V
TSM36A
TSM36A
TSM36A
TSM36A
TSM36A
50
57
VCLAMP
Clamping voltage(2)
V
ILEAK
Leakage current
Dynamic resistance
Line capacitance
1
μA
RDYN
tp = 8/20 µs, from IO to GND
VIO = 0 V, f = 1 MHz, Vp-p = 30 mV
0.5
50
Ω
CIO-GND
80
pF
(1) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction.
(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
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6.7 Typical Characteristics
60
54
48
42
36
30
24
18
12
6
80
72
64
56
48
40
32
24
16
8
52
51.6
51.2
50.8
50.4
50
Current
Voltage
Frequency = 1MHz, Vpp = 30 mV
49.6
49.2
48.8
48.4
48
0
-10
0
30
-5
0
5
10
Time (ꢀs)
15
20
25
-25 -20 -15 -10
-5
0
5
10
15
20
25
VR (V)
图6-1. 8/20 μs Surge Response
图6-2. Capacitance vs Bias Voltage
图6-3. Leakage vs Temperature
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7 Detailed Description
7.1 Overview
The TSM36A is a surge protection diode that clamps the voltage during a fault and protects downstream
components from overvoltage events.
7.2 Functional Block Diagram
IO
3
TSM36A
1
2
GND
7.3 Feature Description
The TSM36A is a surge protection diode that handles 41 A of IEC 61000-4-5 8/20 µs surge current. The low
clamping voltage protects downstream circuits from being stressed during a surge event. The TSM36A has
minimal leakage current at the standoff voltage of 36 V, making it a good candidate for applications where low
leakage is needed to reduce power dissipation. A 30-kV IEC 61000-4-2 rating makes it a robust protection
solution for ESD events as well. The TSM36A has a wide ambient temperature range of –55°C to +150°C which
enables it to work in applications requiring an extended temperature range. The small SOT-23 (DBZ) package
enables it to save board area compared to other surge protection devices in a traditional SMA package. The
leaded SOT-23 (DBZ) package enables automatic optical inspection during the assembly process.
7.4 Device Functional Modes
7.4.1 Protection Specifications
The TSM36A is specified according to both the IEC 61000-4-5 standard. The IEC 61000-4-5 standard requires
protection against a pulse with a rise time of 8 µs and a half length of 20 µs.
Additionally, the TSM36A is tested according to IEC 61000-4-5 to pass a ±1.7 kV surge test through a 42-Ω
coupling resistor and a 0.5 µF capacitor, which is a common test requirement for industrial signal I/O lines. The
TSM36A will serve as a protection solution for applications with that requirement.
The TSM36A integrates 30-kV IEC 61000-4-2 rated ESD protection, which ensures that the device can protect
against both surge and ESD transient events.
For more information on TI's test method for surge and ESD testing, reference TI's IEC 61000-4-x Testing
application note.
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8 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The TSM36A can be used to protect any power, analog, or digital signal from transient fault conditions caused
by the environment or other electrical components.
8.2 Typical Application
L+
TSM36A (x6)
0.1 µF
(A)
(A)
RX
TX
1
Application
(for example
MCU I/O)
2
M12 Connector
IO Link
Transceiver
4
CQ
3
(A)
L-
A. Diagram shows two TSM36A unidirectional devices stacked in series with the anodes tied back-to-back to protect between the
respective signals.
图8-1. TSM36A Application Schematic
8.2.1 Design Requirements
In the previous example, the TSM36A is protecting an IO Link tranceiver that has a nominal voltage of 24 V and
a maximum input voltage of 30 V. Most industrial interfaces such as this require protection against ±1 kV surge
test through a 42-Ω coupling resistor and a 0.5 µF capacitor, equaling approximately 24 A of surge current. If a
surge event caused by lightning, coupling, ringing, or any other fault condition occurs without any input
protection, then this input voltage will rise to hundreds of volts in microseconds, which violates the absolute
maximum input voltage and will harm the device. An ideal surge protection diode will maximize the useable
voltage range while still clamping at a safe level for the system.
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8.2.2 Detailed Design Procedure
If the TSM36A is protecting the device, then during a surge event the voltage will rise to the breakdown of the
diode at 37.8 V (minimum), the TSM36A will turn on and shunt the surge current to ground. With the low
dynamic resistance of the TSM36A, large amounts of surge current will have some impact on the clamping
voltage. The dynamic resistance of the TSM36A is around 0.5 Ω, which means 24 A of surge current will cause
a voltage rise of 24 A × 0.5 Ω = 12 V. Because the device turns on at 37.8 V (minimum), the IO Link transceiver
input will be exposed to 37.8 V + 12 V = 49.8 V during surge pulses, which is well within the absolute maximum
voltage of the IO Link transceiver input pins (L+, L-, and CQ) and will protect the circuit. The small size of the
device also improves fault protection by lowering the effect of fault current coupling onto neighboring traces. The
small form factor of the SOT-23 package allows the device to be placed extremely close to the input connector,
lowering the length of the fault current path through the system compared to larger protection solutions. Finally,
the low leakage of the TSM36A will have low input power losses. The device will receive a maximum of 1 μA
leakage at 36 V for a constant power dissipation of 36 μW; a small quantity that will minimally effect overall
efficiency metrics and heating concerns.
8.2.3 Configuration Options
The TSM36A can either be used in an unidirectional or bidirectional configuration. For bidirectional operation,
place two TSM36A devices in series with reverse orientation, which allows a working voltage of ±36 V. TSM36A
bidirectional operation is similar to its unidirectional operation, but with a minor increase in breakdown voltage
and clamping voltage.
9 Power Supply Recommendations
This is a passive TVS diode-based surge protection device; therefore, there is no requirement to power it.
Ensure that the maximum voltage specifications for each pin are not violated.
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10 Layout
10.1 Layout Guidelines
• For optimal performance, place the device as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TVS and the connector.
• Route the protected traces as straight as possible.
• Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
• Pin 1 and 2 are not internally connected. To achieve the rated performance, it is required to connect Pin 1
and 2 together on the PCB as close to the device as possible and route the signal to ground. Also use a thick
and short trace for this return path.
10.2 Layout Example
The following is a typical example of the layout routing for the TSM36A undirectional device.
GND
IO
GND
= VIA to GND
= Top Layer
= Bottom Layer
图10-1. Routing with DBZ Package
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, TI's IEC 61000-4-x Testing application note
• Texas Instruments, ESD Layout Guide user's guide
• Texas Instruments, ESD Protection Diodes EVM user's guide
• Texas Instruments, Generic ESD Evaluation Module user's guide
• Texas Instruments, Reading and Understanding an ESD Protection data sheet
11.2 接收文档更新通知
要接收文档更新通知,请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册,即可每周接收产品信息更
改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
11.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料,可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范,并且不一定反映 TI 的观点;请参阅
TI 的《使用条款》。
11.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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18-Jan-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TSM36ADBZR
ACTIVE
SOT-23
DBZ
3
3000 RoHS & Green
NIPDAU
Level-1-260C-UNLIM
-40 to 125
2O98
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
12-Nov-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TSM36ADBZR
SOT-23
DBZ
3
3000
180.0
8.4
2.9
3.35
1.35
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
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12-Nov-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOT-23 DBZ
SPQ
Length (mm) Width (mm) Height (mm)
210.0 185.0 35.0
TSM36ADBZR
3
3000
Pack Materials-Page 2
PACKAGE OUTLINE
DBZ0003A
SOT-23 - 1.12 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
2.64
2.10
1.12 MAX
1.4
1.2
B
A
0.1 C
PIN 1
INDEX AREA
1
0.95
(0.125)
3.04
2.80
1.9
3
(0.15)
NOTE 4
2
0.5
0.3
3X
0.10
0.01
(0.95)
TYP
0.2
C A B
0.25
GAGE PLANE
0.20
0.08
TYP
0.6
0.2
TYP
SEATING PLANE
0 -8 TYP
4214838/D 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC registration TO-236, except minimum foot length.
4. Support pin may differ or may not be present.
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EXAMPLE BOARD LAYOUT
DBZ0003A
SOT-23 - 1.12 mm max height
SMALL OUTLINE TRANSISTOR
PKG
3X (1.3)
1
3X (0.6)
SYMM
3
2X (0.95)
2
(R0.05) TYP
(2.1)
LAND PATTERN EXAMPLE
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214838/D 03/2023
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DBZ0003A
SOT-23 - 1.12 mm max height
SMALL OUTLINE TRANSISTOR
PKG
3X (1.3)
1
3X (0.6)
SYMM
3
2X(0.95)
2
(R0.05) TYP
(2.1)
SOLDER PASTE EXAMPLE
BASED ON 0.125 THICK STENCIL
SCALE:15X
4214838/D 03/2023
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
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