TUSB501TDRFRQ1 [TI]
汽车类 USB 3.0 5Gbps 单通道转接驱动器 | DRF | 8 | -40 to 105;
| 型号： | TUSB501TDRFRQ1 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 汽车类 USB 3.0 5Gbps 单通道转接驱动器 | DRF | 8 | -40 to 105 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总23页 (文件大小：1907K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TUSB501-Q1
ZHCSFA8 –MAY 2016
TUSB501-Q1 具有均衡功能的 USB 3.0 单通道转接驱动器
1 特性
上电后，TUSB501-Q1 会定期在 TX 对上执行接收器
1
检测。如果检测到 SuperSpeed USB 接收器，则使能
RX 端，TUSB501-Q1 准备转接驱动。
•
•
符合汽车级 Q100 标准
强大的低功耗架构（典型值）：
–
–
–
工作时的功耗为 126mW
在 U2/U3 模式下为 20mW
无连接时为 4mW
接收器均衡器具有三个由引脚 EQ 控制的增益设
置：3dB、6dB 和 9dB。该增益应根据 TUSB501-Q1
之前的损耗量进行设置。相似地，输出驱动器支持去加
重和输出摆动配置（引脚 DE 和 OS）。借助这些设
置，可以将 TUSB501-Q1 灵活置于 SuperSpeed USB
路径上，同时保持优异性能。
•
•
自动低频率周期信号 (LFPS) 去加重 (DE) 控制
出色的抖动与损耗补偿
–
–
32 英寸的 FR4 4 毫英寸带状线
长度 3m 的 30 美制电线标准 (AWG) 电缆
与之前几代产品相比，TUSB501-Q1 特有 更低的功耗
（所有链路状态下）、更强的 OS 选项、改进的接收
器均衡设置以及智能 LFPS 控制器。该控制器可感测
低频信号并自动禁用驱动器去加重功能，完全符合
USB 3.0 标准。
•
•
•
•
•
集成型终端
小型 2mm × 2mm 四方扁平无引线 (QFN) 封装
可选接收器均衡、发射器去加重和输出摆动
支持热插拔
静电放电 (ESD) 保护 ±5kV 人体放电模式 (HBM)
和 1500V 带电器件模型 (CDM)
TUSB501-Q1 采用小型 2mm x 2mm QFN 封装，可在
–40°C 至 105°C 的工业级温度范围内运行。
2 应用
器件信息(1)
•
•
•
•
•
•
手机
器件型号
封装
封装尺寸（标称值）
计算机
扩展坞
电视
TUSB501-Q1
WSON
2.00mm x 2.00mm
(1) 要了解所有可用封装，请参见数据表末尾的可订购产品附录。
通电的线缆
背板
简单应用
TUSB501-Q1
USB Host
3 说明
TUSB501-Q1 是第 3 代 3.3V USB 3.0 单通道转接驱
动器。当 5Gbps 超高速 USB 信号在印刷电路板
(PCB) 或电缆上传输时，其完整性会在通道损耗和码
间串扰的影响下有所降低。TUSB501-Q1 可通过应用
均衡功能来补偿通道损耗，从而恢复传入的数据，并使
用较高的差分电压驱动信号。这样可扩展通道长度，并
且使系统能够通过 USB3.0 标准。TUSB501-Q1 的高
级状态机方便主机和设备有效查看其状态。
TUSB501-Q1
USB Connector
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
English Data Sheet: SLLSET3
TUSB501-Q1
ZHCSFA8 –MAY 2016
www.ti.com.cn
目录
9.1 Overview ................................................................. 10
9.2 Functional Block Diagram ....................................... 11
9.3 Feature Description................................................. 11
9.4 Device Functional Modes........................................ 12
10 Application and Implementation........................ 13
10.1 Application Information.......................................... 13
10.2 Typical Application ............................................... 13
11 Power Supply Recommendations ..................... 14
12 Layout................................................................... 15
12.1 Layout Guidelines ................................................. 15
12.2 Layout Example .................................................... 16
13 器件和文档支持 ..................................................... 17
13.1 社区资源................................................................ 17
13.2 商标....................................................................... 17
13.3 静电放电警告......................................................... 17
13.4 Glossary................................................................ 17
14 机械、封装和可订购信息....................................... 17
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Device Comparison Table..................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
7.1 Absolute Maximum Ratings ..................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions...................... 4
7.4 Thermal Information.................................................. 4
7.5 Power Supply Characteristics.................................. 5
7.6 DC Electrical Characteristics .................................... 5
7.7 AC Electrical Characteristics..................................... 6
7.8 Typical Characteristics.............................................. 7
Parameter Measurement Information .................. 8
Detailed Description ............................................ 10
8
9
4 修订历史记录
日期
修订版本
注释
2016 年 4 月
*
最初发布。
2
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
www.ti.com.cn
ZHCSFA8 –MAY 2016
5 Device Comparison Table
USB3.0 Re-drivers (5 Gbps)
TUSB551
FEATURE
Package
TUSB501-Q1
SN65LVPE502A
SN65LVPE512
8 Pin WSON
12 Pin X2QFN
24 Pin VQFN
24 Pin WQFN
3 mm x 3 mm, 4 mm x 4
mm
Package Size
2 mm x 2 mm
1.6 mm x 1.6 mm
3 mm x 3 mm
Package Pitch
Channels
0.5 mm
1
0.4 mm
1
0.4 mm, 0.5 mm
2
0.4 mm
2
Active Power (Typical)
U2/U3
126 mW
20 mW
4 mW (NC)
3, 6, 9
< 130 mW
< 22 mW
< 8 mW (NC)
3, 6, 9
315 mW
315 mW
70 mW
70 mW
Low Power
3.6 µW (Sleep)
0, 7, 15
3.6 µW (Sleep)
0, 7, 15
EQ Settings (dB)
ESD Protection
Power Supply
5 kV HBM
3.3 VDC
2 kV HBM
1.8 VDC
5 kV HBM
3.3 VDC
5 kV HBM
3.3 VDC
6 Pin Configuration and Functions
DRF Package
8-Pin (WSON)
(Top View)
VCC
RXP
RXN
OS
1
8
7
6
5
DE
2
3
4
TXP
TXN
EQ
GND
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
RXP
RXN
TXN
NO.
2
Differential input pair for 5 Gbps SuperSpeed USB signals.
3
Differential I/O
6
Differential output pair for 5 Gbps SuperSpeed USB signals.
TXP
7
Sets the receiver equalizer gain. 3-state input with integrated pull-up and pull-
down resistors.
EQ
DE
OS
5
Sets the output de-emphasis gain. 3-state input with integrated pull-up and pull-
down resistors.
CMOS Input
Power
8
4
Sets the output swing (differential voltage amplitude). 2-state input with an
integrated pull-down resistor.
VCC
GND
1
3.3-V power supply
Reference ground
Thermal Pad
Copyright © 2016, Texas Instruments Incorporated
3
TUSB501-Q1
ZHCSFA8 –MAY 2016
www.ti.com.cn
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
–0.5
–0.5
–0.5
–65
-40
MAX
UNIT
V
(2)
Supply voltage range
VCC
4
4
Differential I/O
CMOS inputs
V
Voltage range at any input or output
terminal
VCC + 0.5
150
V
Storage temperature, TSTG
°C
°C
Maximum junction temperature, TJ
125
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the GND terminals.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±5000
V(ESD)
Electrostatic discharge
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
3
NOM
MAX
3.6
UNIT
V
VCC
TA
Main power supply
3.3
Operating free-air temperature
AC coupling capacitor
–40
75
105
200
°C
CAC
100
nF
7.4 Thermal Information
TUSB501-Q1
THERMAL METRIC(1)
UNITS
DRF (WSON)
105.5
47.5
RθJA
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-board thermal resistance
70.9
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case(bottom) thermal resistance
10.0
ψJB
70.9
RθJC(bottom)
51.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
4
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
www.ti.com.cn
ZHCSFA8 –MAY 2016
7.5 Power Supply Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX(2)
UNIT
Link in U0 with SuperSpeed USB
data transmission, OS = Low
38.1
ICC-ACTIVE Average active current
mA
Link in U0 with SuperSpeed USB
data transmission, OS = High
43.8
65
Link has some activity, not in U0,
OS = Low
ICC-IDLE
ICC-U2U3
ICC-NC
Average current in idle state
Average current in U2/U3
29.8
6.1
mA
mA
mA
Link in U2 or U3
No SuperSpeed USB device is
connected to TXP, TXN
Average current with no connection
1.3
OS = Low
OS = High
126
145
PD
Power Dissipation in U0
mW
234
(1) TYP values use VCC = 3.3 V, TA = 25°C.
(2) MAX values use VCC = 3.6 V, TA = –40°C.
7.6 DC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
0.6
UNIT
3-State CMOS Inputs (EQ, DE)
VIH
VIM
VIL
VF
High-level input voltage
Mid-level input voltage
Low-level input voltage
Floating voltage
2.8
V
V
VCC / 2
V
VIN = High impedance
VCC / 2
190
V
RPU
RPD
IIH
Internal pull-up resistance
Internal pull-down resistance
High-level input current
Low-level input current
kΩ
kΩ
µA
µA
190
VIN = 3.6 V
36
IIL
VIN = GND, VCC = 3.6 V
-36
2
2-State CMOS Input (OS)
VIH
VIL
VF
High-level input voltage
V
V
Low-level input voltage
Floating voltage
0.5
26
VIN = High impedance
GND
270
V
RPD
IIH
Internal pull-down resistance
High-level input current
Low-level input current
kΩ
µA
µA
VIN = 3.6 V
VIN = GND
IIL
-1
Copyright © 2016, Texas Instruments Incorporated
5
TUSB501-Q1
ZHCSFA8 –MAY 2016
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7.7 AC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Differential Receiver (RXP, RXN)
Input differential voltage swing
AC-coupled differential peak-to-peak
signal
VDIFF-pp
VCM-RX
ZRX-DIFF
ZRX-CM
100
1200
mVpp
V
Common-mode voltage bias in the
receiver (DC)
3.3
Present after a SuperSpeed USB
device is detected on TXP/TXN
Differential input impedance (DC)
72
18
91
120
30
Ω
Ω
Common-mode input impedance
(DC)
Present after a SuperSpeed USB
device is detected on TXP, TXN
22.8
Present when no SuperSpeed USB
device is detected on TXP, TXN.
Measured over the range of 0-500
mV with respect to GND.
ZRX-HIGH-
IMP-DC-POS
Common-mode input impedance
with termination disabled (DC)
25
35
kΩ
VRX-LFPS-
DET-DIFF-pp
Low Frequency Periodic Signaling
(LFPS) Detect Threshold
Below the minimum is squelched
100
300
mVpp
Differential Transmitter (TXP, TXN)
OS = Low, No load
OS = High, No load
930
Transmitter differential voltage swing
(transition-bit)
VTX-DIFF-PP
mVpp
dB
1300
VTX-DE-
RATIO
CTX
Transmitter de-emphasis
DE = Floating, OS = Low
At 2.5 GHz
-3.5
TX input capacitance to GND
1.25
93
pF
ZTX-DIFF
ZTX-CM
ITX-SC
Differential impedance of the driver
75
125
31.25
60
Ω
Common-mode impedance of the
driver
Measured with respect to AC ground
over 0-500 mV
18.75
Ω
mA
V
TX short circuit current
TX ± shorted to GND
Common-mode voltage bias in the
transmitter (DC)
VCM-TX
1.2
0
2.5
AC common-mode voltage swing in
active mode
VCM-TX-AC
Within U0 and within LFPS
Tested with a high-pass filter
100
10
mVpp
mVpp
mV
VTX-IDLE-
DIFF -AC-pp
VTX-CM-
Differential voltage swing during
electrical idle
Absolute delta of DC CM voltage
during active and idle states
Restrict the test condition to meet
100 mV
100
12
DeltaU1-U0
VTX-idle-diff- DC electrical idle differential output
voltage
Voltage must be low pass filtered to
remove any AC component
0
mV
DC
Differential Transmitter (TXP, TXN)
Output rise, fall time
see Figure 6
20%-80% of differential voltage
measured 1 inch from the output pin
tR, tF
80
ps
ps
20%-80% of differential voltage
measured 1 inch from the output pin
tRF-MM
Output Rise, Fall time mismatch
20
De-emphasis = -3.5 dB propagation
delay between 50% level at input
and output
tdiff-LH
tdiff-HL
,
Differential propagation delay
see Figure 4
290
3.6
ps
ns
tidleEntry
tidleExit
,
Idle entry and exit times
see Figure 5
6
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
www.ti.com.cn
ZHCSFA8 –MAY 2016
AC Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Timing
Apply 0 V to VCC, connect
Time from power applied until RX
termination
SuperSpeed USB termination to
TX±, apply 3.3 V to VCC, and
measure when ZRX-DIFF is enabled.
tREADY
9
ms
Jitter
TJTX-EYE
DJTX
(1) (2)
(3)
Total jitter
0.213
0.197
0.016
UI
EQ = Floating, OS = High,
DE = High
See Figure 3.
(2)
(3)
Deterministic jitter
UI
(2) (4)
(3)
RJTX
Random jitter
UI
(1) Includes RJ at 10-12
.
(2) Measured at the ends of reference channel in Figure 3 with K28.5 pattern, VID = 1000 mVpp, 5 Gbps, -3.5 dB de-emphasis from source.
(3) UI = 200 ps.
(4) Rj calculated as 14.069 times the RMS random jitter for 10-12 BER.
7.8 Typical Characteristics
TA = 25°C
TA = 25°C
EQ = NC
DE = HIGH
OS = HIGH
Figure 1. Input for Typical Output Measurement
at TUSB501-Q1
Figure 2. Typical Output Eye for Jitter Measurement Setup
in Figure 3
Copyright © 2016, Texas Instruments Incorporated
7
TUSB501-Q1
ZHCSFA8 –MAY 2016
www.ti.com.cn
8 Parameter Measurement Information
Jitter
Measurement
A
TUSB501-Q1
AWG
Up to3m
(30AWG)
1"-6"
24"
4"
Figure 3. Jitter Measurement Setup
spacer
IN
Tdiff_HL
Tdiff_LH
OUT
Figure 4. Propagation Delay
IN+
Vcm
IN-
VRX-LFPS-DET-DIFF-pp
tidleExit
tidleEntry
OUT+
Vcm
OUT-
Figure 5. Electrical Idle Mode Exit and Entry Delay
spacer
8
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
www.ti.com.cn
ZHCSFA8 –MAY 2016
Parameter Measurement Information (continued)
80%
20%
tr
t
f
Figure 6. Output Rise and Fall Times
Copyright © 2016, Texas Instruments Incorporated
9
TUSB501-Q1
ZHCSFA8 –MAY 2016
www.ti.com.cn
9 Detailed Description
9.1 Overview
When 5 Gbps SuperSpeed USB signals travel across a PCB or cable, signal integrity degrades due to loss and
inter-symbol interference. The TUSB501-Q1 recovers incoming data by applying equalization that compensates
for channel loss, and drives out signals with a high differential voltage. This extends the possible channel length,
and enables systems to pass USB 3.0 compliance.
The TUSB501-Q1 advanced state machine makes it transparent to hosts and devices. After power up, the
TUSB501-Q1 periodically performs receiver detection on the TX pair. If it detects a SuperSpeed USB receiver,
the RX termination is enabled, and the TUSB501-Q1 is ready to re-drive.
The device aggressive Low-Power Architecture operates at a 3.3-V power supply and achieves enhanced
performance, as lower as 3 mW with no connection and 126 mW in active state. The receiver equalizer has three
gain settings that are controlled by terminal EQ: 3 dB, 6 dB, and 9 dB. The equalization should be set based on
amount of insertion loss in the channel before the TUSB501-Q1. Likewise, the output driver supports
configuration of De-Emphasis and Output Swing (terminals DE and OS). The automatic LFPS De-Emphasis
control further enables the system to be USB3.0 compliant. The TUSB501-Q1 operates over the industrial
temperature range of -40ºC to 85ºC in a small 2 x 2 mm WSON package.
Table 1. Control Pin Effects (Typical Values)
PIN
DESCRIPTION
LOGIC STATE
Low
GAIN
3 dB
6 dB
9 dB
EQ
Equalization Amount
Floating
High
OUTPUT DIFFERENTIAL VOLTAGE
FOR THE TRANSITION BIT
PIN
DESCRIPTION
LOGIC STATE
Low
930 mVpp
Output Swing
Amplitude
OS
High
1300 mVpp
(1)
DE-EMPHASIS RATIO
PIN
DESCRIPTION
LOGIC STATE
FOR OS = LOW
0 dB
FOR OS = HIGH
–2.6 dB
Low
Floating
High
De-Emphasis
Amount
DE
–3.5 dB
–5.9 dB
–6.2 dB
–8.3 dB
(1) Typical values
10
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
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ZHCSFA8 –MAY 2016
9.2 Functional Block Diagram
EQ
DE OS
RX+
TX+
TX-
Receiver/
Equalizer
Driver
RX-
3rd Generation
State Machine
LFPS
Controller
VCC
GND
/opyright © 2016, Çexas Lnstruments Lncorporated
/opyright © 2016, Çexas Lnstruments Lncorporated
9.3 Feature Description
9.3.1 Receiver Equalization
The purpose of receiver equalization is to compensate for channel insertion loss and inter-symbol interference in
the system before the input of the TUSB501-Q1. The receiver overcomes these losses by attenuating the low
frequency components of the signals with respect to the high frequency components. The proper gain setting
should be selected to match the channel insertion loss before the input of the TUSB501-Q1.
9.3.2 De-Emphasis Control and Output Swing
The differential driver output provides selectable de-emphasis and output swing control in order to achieve
USB3.0 compliance. The TUSB501-Q1 offers a unique way to adjust output de-emphasis and transmitter swing
based on the OS and DE terminals. The level of de-emphasis required in the system depends on the channel
length after the output of the re-driver.
Transition
bit
Transition
bit
Consecutive bits
DE =0dB
Consecutive bits
415mV
DE =-3.5dB
DE =-6.2dB
VTX-DIFF-PP
0V
DE =-6.2dB
DE =-3.5dB
DE =0dB
-415mV
0ps
200ps
400ps
600ps
800ps
1000ps
1200ps
Figure 7. Transmitter Differential Voltage, OS = L
Copyright © 2016, Texas Instruments Incorporated
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ZHCSFA8 –MAY 2016
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Feature Description (continued)
9.3.3 Automatic LFPS Detection
The TUSB501-Q1 features an intelligent low frequency periodic signaling (LFPS) controller. The controller
senses the low frequency signals and automatically disables the driver de-emphasis, for full USB3.0 compliance.
9.3.4 Automatic Power Management
The TUSB501-Q1 deploys RX detect, LFPS signal detection and signal monitoring to implement an automatic
power management scheme to provide active, U2/U3 and disconnect modes. The automatic power management
is driven by an advanced state machine, which is implemented to manage the device such that the re-driver
operates smoothly in the links.
9.4 Device Functional Modes
9.4.1 Disconnect Mode
The Disconnect mode is the lowest power state of the TUSB501-Q1. In this state, the TUSB501-Q1 periodically
checks for far-end receiver termination on both TX. Upon detection of the far-end receiver’s termination on both
ports, the TUSB501-Q1 will transition to U0 mode.
9.4.2 U Modes
9.4.2.1 U0 Mode
The U0 mode is the highest power state of the TUSB501-Q1. Anytime super-speed traffic is being received,
theTUSB501-Q1 remains in this mode.
9.4.2.2 U2/U3 Mode
Next to the disconnect mode, the U2/U3 mode is next lowest power state. While in this mode, the TUSB501-Q1
periodically performs far-end receiver detection.
12
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
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ZHCSFA8 –MAY 2016
10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
One example of the TUSB501-Q1 used in a Host application on transmit and receive channels is shown in
Figure 8. The re-driver is needed on the transmit path to pass transmitter compliance due to loss between the
Host and connector. The re-driver uses the equalization to recover the insertion loss and re-drive the signal with
boosted swing down the remaining channel, through the USB3.0 cable, and into the device PCB. Additionally,
the TUSB501-Q1 is needed on the receive channel for the Host to pass receiver jitter tolerance. The re-driver
recovers the loss from the Device PCB, connector, and USB 3.0 cable and re-drives the signal going into the
Host receiver. The equalization, output swing, and de-emphasis settings are dependent upon the type of USB3.0
signal path and end application.
10.2 Typical Application
U2
VDD33
VDD33
U3B
U4B
VBUS
4
5
8
4
5
8
OS
OS
EQ
R11
4.98K
R12
4.98K
1
2
3
4
5
6
7
VBUS_PWR
USB2_D_N
USB2_D_P
GND
EQ
DE1_PU
DE2_PU
DE
DE
USB2.0_D_N
TUSB501-Q1
TUSB501-Q1
USB High Speed Line
USB2.0_D_P
VBUS
VDD33
U5
1
2
3
5
4
VIN VOUT
GND
Device TX
Host RX
C5
1.0uF
C6
C7
10uF
U3A
1.0uF
HOST_USB3.0_TX_N
DEVICE_USB3.0_RX_N
1
2
7
2
3
EN
N/C
TXP RXP
USB3_RX_N
USB3_RX_P
GND_DRAIN
USB3_TX_N
USB3_TX_P
SHIELD1
C14 0.1uF
LP5907
6
TXN RXN
HOST_USB3.0_TX_P
DEVICE_USB3.0_RX_P
1
2
U3C
TUSB501-Q1
C15 0.1uF
VCC_TUSB501-Q1
1
9
VCC
Host TX
Device RX
C8
0.1uF
C9
C10
0.01uF
1.0uF
U4A
GND_PAD
HOST_USB3.0_RX_N
HOST_USB3.0_RX_P
DEVICE_USB3.0_TX_N
8
3
2
6
7
1
2
TUSB501-Q1
RXN TXN
C1 0.1uF
RXP TXP
DEVICE_USB3.0_TX_P
1
2
9
10
11
TUSB501-Q1
C2 0.1uF
U4C
VCC
VCC_TUSB501-Q1
1
9
C11
0.1uF
C12
C13
SHIELD2
0.01uF
1.0uF
GND_PAD
TUSB501-Q1
USB3_STANDARD_TYPE-A_RECEPTACLE
Copyright © 2016, Texas Instruments Incorporated
Figure 8. Application Schematic
10.2.1 Design Requirements
For this design example, use the parameter shown in Table 2.
Table 2. Design Parameters
PARAMETER
VCC
VALUE
3.3 V
Supply nominal current
Operating free-air temperature
CAC AC coupling capacitor
Pull-up resistors
250 mA
TA = 25°C
100 nF
4.98 kΩ
Copyright © 2016, Texas Instruments Incorporated
13
TUSB501-Q1
ZHCSFA8 –MAY 2016
www.ti.com.cn
10.2.2 Detailed Design Procedure
To begin the design process, determine the following:
•
•
•
Equalization (EQ) setting
De-Emphasis (DE) setting
Output Swing Amplitude (OS) setting
The equalization should be set based on the insertion loss in the pre-channel (channel before the TUSB501-Q1
device). The input voltage to the device is able to have a large range because of the receiver sensitivity and the
available EQ settings. The EQ terminal can be pulled high through a resistor to VCC, low through a resistor to
ground, or left floating. The application schematic above shows the implementation.
The De-Emphasis setting should be set based on the length and characteristics of the post channel (channel
after the TUSB501-Q1 device). Output de-emphasis can be tailored using the DE terminal. This terminal should
be pulled high through a resistor to VCC, low through a resistor to ground, or left floating. Figure 8 shows the
implementation. The output swing setting can also be configured based on the amplitude needed to pass the
compliance test. This setting will also be based on the length of interconnect or cable the TUSB501-Q1 is driving.
This terminal should be pulled low through a resistor to ground or left floating. Figure 8 shows the
implementation.
10.2.3 Application Curves
DE = 0 dB
EQ = 6 dB
8 Input Trace
DE = 0 dB
EQ = 6 dB
8 Input Trace
Figure 9. Eye Diagram
Figure 10. SigTest CP1 Eye Diagram
11 Power Supply Recommendations
This device is designed to operate with a 3.3-V supply. If using a higher voltage system power supply such as
VBUS, a voltage regulator can be used to step down to 3.3 V. Decoupling capacitors may be used to reduce
noise and improve power supply integrity.
14
Copyright © 2016, Texas Instruments Incorporated
TUSB501-Q1
www.ti.com.cn
ZHCSFA8 –MAY 2016
12 Layout
12.1 Layout Guidelines
•
The 100-nF capacitors on the TXP and SSTXN nets should be placed close to the USB connector (Type A,
Type B, and so forth).
•
The ESD and EMI protection devices (if used) should also be placed as close as possible to the USB
connector.
•
•
Place voltage regulators as far away as possible from the differential pairs.
In general, the large bulk capacitors associated with each power rail should be placed as close as possible to
the voltage regulators.
•
•
It is recommended that small decoupling capacitors for the 1.8-V power rail be placed close to the TUSB501-
Q1 as shown in Figure 11.
The SuperSpeed differential pair traces for RXP/N and TXP/N must be designed with a characteristic
impedance of 90 Ω ±10%. The PCB stack-up and materials determines the width and spacing needed for a
characteristic impedance of 90 Ω.
•
•
The SuperSpeed differential pair traces should be routed parallel to each other as much as possible. It is
recommended the traces be symmetrical.
In order to minimize cross talk, it is recommended to keep high speed signals away from each other. Each
pair should be separated by at least 5 times the signal trace width. Separating with ground also helps
minimize cross talk.
•
•
•
Route all differential pairs on the same layer adjacent to a solid ground plane.
Do not route differential pairs over any plane split.
Adding test points will cause impedance discontinuity and will therefore negatively impact signal performance.
If test points are used, they should be placed in series and symmetrically. They must not be placed in a
manner that causes stub on the differential pair.
•
•
Avoid 90 degree turns in traces. The use of bends in differential traces should be kept to a minimum. When
bends are used, the number of left and right bends should be as equal as possible and the angle of the bend
should be ≥ 135 degrees. This will minimize any length mismatch caused by the bends and therefore
minimize the impact bends have on EMI.
Match the etch lengths of the differential pair traces. There should be less than 5 mils difference between a
SS differential pair signal and its complement. The USB 2.0 differential pairs should not exceed 50 mils
relative trace length difference.
•
•
The etch lengths of the differential pair groups do not need to match (that is, the length of the RXP/N pair to
that of the TXP/N pair), but all trace lengths should be minimized.
Minimize the use of vias in the differential pair paths as much as possible. If this is not practical, make sure
that the same via type and placement are used for both signals in a pair. Any vias used should be placed as
close as possible to the TUSB501-Q1 device.
•
•
To ease routing, the polarity of the SS differential pairs can be swapped. This means that TXP can be routed
to TXN or RXN can be routed to RXP.
Do not place power fuses across the differential pair traces.
Copyright © 2016, Texas Instruments Incorporated
15
TUSB501-Q1
ZHCSFA8 –MAY 2016
www.ti.com.cn
12.2 Layout Example
Figure 11. Example Layout
16
版权 © 2016, Texas Instruments Incorporated
TUSB501-Q1
www.ti.com.cn
ZHCSFA8 –MAY 2016
13 器件和文档支持
13.1 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.2 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
13.3 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损
伤。
13.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 机械、封装和可订购信息
以下页中包括机械、封装和可订购信息。这些信息是针对指定器件可提供的最新数据。这些数据会在无通知且不对
本文档进行修订的情况下发生改变。欲获得该数据表的浏览器版本，请查阅左侧的导航栏。
版权 © 2016, Texas Instruments Incorporated
17
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IMPORTANT NOTICE
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Copyright © 2016, 德州仪器半导体技术（上海）有限公司
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
TUSB501TDRFRQ1
ACTIVE
WSON
DRF
8
3000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 105
501Q
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
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Addendum-Page 1
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Copyright © 2020 德州仪器半导体技术（上海）有限公司
相关型号：
TUSB5152PZ
5-Port Hub with Integrated Bridge to IEEE 1284 Port and Two Serial Ports 100-LQFP 0 to 70
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