TVS3300DRVR [TI]

33V 平缓钳位浪涌保护器件 | DRV | 6 | -40 to 125;
TVS3300DRVR
型号: TVS3300DRVR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

33V 平缓钳位浪涌保护器件 | DRV | 6 | -40 to 125

文件: 总27页 (文件大小:2363K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Support &  
Community  
Product  
Folder  
Order  
Now  
Tools &  
Software  
Technical  
Documents  
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
TVS3300 33V 平缓钳位浪涌保护器件  
1 特性  
3 说明  
1
保护特性符合针对工业信号线路的 1kV42Ω IEC  
TVS3300 可将高达 35A IEC 61000-4-5 故障电流进  
61000-4-5 浪涌测试要求  
行可靠分流,以保护系统免受高功率瞬态冲击或雷击。  
该器件为满足常见的工业信号线路 EMC 要求提供了解  
决方案,可通过 42Ω 电阻进行耦合的方式承受最高  
1kV IEC 61000-4-5 开路电压。TVS3300 使用独特的  
反馈机制确保在故障期间发挥精确的平缓钳位能力,保  
证系统接触电压低于 40V。精确的电压调节允许设计  
人员放心地选择具有较低电压容差的系统组件,不但减  
少了系统成本和复杂度,而且不损害可靠性。  
35A8/20µs 浪涌电流下的最大钳位电压为 40V  
关态电压:33V  
微型 1.1mm2 WCSP 4mm2 SON 封装  
125°C 时,可耐受超过 4,000 次的 30A 8/20µs  
浪涌电流的重复冲击  
强大的浪涌保护  
IEC61000-4-5 (8/20µs)35A  
IEC61643-321 (10/1000µs)4A  
此外,TVS3300 还采用 1mm × 1.1mm WCSP 和  
2mm × 2mm SON 封装,非常适用于空间受限的 应  
用,与业内标准的 SMA SMB 封装相比,尺寸减小  
高达 90%。极低的器件泄露电流和电容确保最大限度  
地降低了对受保护线路的影响。为了确保在产品的整个  
寿命期间提供可靠保护,TI 在高温环境下对 TVS3300  
进行了 4000 次重复浪涌冲击测试,但器件性能未发生  
任何变化。  
低泄漏电流  
27°C 下为 19nA(典型值)  
85°C 下为 28nA(典型值)  
低电容:130pF  
集成 4 IEC 61000-4-2 ESD 保护  
2 应用  
工业传感器  
PLC I/O 模块  
24V 电源线或数字开关线  
4/20mA 环路  
电器  
TVS3300 TI 的平缓钳位系列浪涌器件中的一款产  
品。有关该系列的其他器件的更多信息,请参阅器件比  
较表  
设备信息(1)  
医疗设备  
器件型号  
TVS3300  
封装  
WCSP (4)  
SON (6)  
封装尺寸(标称值)  
1.062mm × 1.116mm  
2.00mm × 2.00mm  
电机驱动器  
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附  
录。  
封装比较  
8/20µs 浪涌事件的电压钳位响应  
10  
20  
30  
Time (s)  
Traditional TVS  
TI Flat-Clamp  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
English Data Sheet: SLVSDO2  
 
 
 
 
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
目录  
8.4 Reliability Testing...................................................... 9  
8.5 Device Functional Modes ......................................... 9  
Application and Implementation ........................ 11  
9.1 Application Information............................................ 11  
9.2 Typical Application ................................................. 11  
1
2
3
4
5
6
7
特性.......................................................................... 1  
应用.......................................................................... 1  
说明.......................................................................... 1  
修订历史记录 ........................................................... 2  
Device Comparison Table..................................... 3  
Pin Configuration and Functions......................... 4  
Specifications......................................................... 5  
7.1 Absolute Maximum Ratings ...................................... 5  
7.2 ESD Ratings - JEDEC .............................................. 5  
7.3 ESD Ratings - IEC .................................................... 5  
7.4 Recommended Operating Conditions....................... 5  
7.5 Thermal Information.................................................. 5  
7.6 Electrical Characteristics........................................... 6  
7.7 Typical Characteristics.............................................. 7  
Detailed Description .............................................. 9  
8.1 Overview ................................................................... 9  
8.2 Functional Block Diagram ......................................... 9  
8.3 Feature Description................................................... 9  
9
10 Power Supply Recommendations ..................... 12  
11 Layout................................................................... 13  
11.1 Layout Guidelines ................................................. 13  
11.2 Layout Example .................................................... 13  
12 器件和文档支持 ..................................................... 15  
12.1 文档支持................................................................ 15  
12.2 接收文档更新通知 ................................................. 15  
12.3 社区资源................................................................ 15  
12.4 ....................................................................... 15  
12.5 静电放电警告......................................................... 15  
12.6 Glossary................................................................ 15  
13 机械、封装和可订购信息....................................... 15  
8
4 修订历史记录  
Changes from Revision B (April 2017) to Revision C  
Page  
修订数据表以符合其他 TVSxx00 系列器件的要.................................................................................................................. 1  
Changes from Revision A (March 2017) to Revision B  
Page  
Updated standard for (10/1000 μs) from IEC 61000-4-5 to IEC 61643-321 in the Absolute Maximum Ratings table .......... 5  
Changes from Original (Feb 2017) to Revision A  
Page  
已添加 SON 封装选项............................................................................................................................................................. 1  
已添加 在特性 部分中添加 ±11kV 接触放电 (SON) ................................................................................................................ 1  
Added Peak pulse—clamping direction specs for SON package in the Absolute Maximum Ratings table........................... 5  
Added IEC 61000-4-2 contact discharge spec for SON package in the ESD Ratings - IEC table ....................................... 5  
Added TA = 27°C condition to dynamic resistance in the Electrical Characteristics table ..................................................... 5  
2
Copyright © 2017–2018, Texas Instruments Incorporated  
 
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
5 Device Comparison Table  
Vrwm leakage  
(nA)  
Device  
Vrwm  
Vclamp at Ipp  
Ipp (8/20 µs)  
Package Options  
Polarity  
TVS0500  
TVS1400  
TVS1800  
TVS2200  
TVS2700  
TVS3300  
5
9.2  
18.4  
22.8  
27.7  
32.5  
38  
43  
43  
40  
40  
40  
35  
0.07  
2
SON  
SON  
Unidirectional  
Unidirectional  
Unidirectional  
Unidirectional  
Unidirectional  
Unidirectional  
14  
18  
22  
27  
33  
0.5  
3.2  
1.7  
19  
SON  
SON  
SON  
WCSP, SON  
Copyright © 2017–2018, Texas Instruments Incorporated  
3
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
6 Pin Configuration and Functions  
YZF Package  
4-Pin WCSP  
Top View  
DRV Package  
6-Pin SON  
Top View  
1
2
1
2
3
6
5
4
GND  
GND  
IN  
IN  
IN  
GND  
IN  
GND  
IN  
A
B
GND  
GND  
Pin Functions  
PIN  
TYPE  
DESCRIPTION  
NAME  
YZF  
DRV  
4, 5, 6  
IN  
B1, B2  
I
ESD and surge protected channel  
Ground  
1, 2, 3, exposed  
thermal pad  
GND  
A1, A2  
GND  
4
Copyright © 2017–2018, Texas Instruments Incorporated  
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
7 Specifications  
7.1 Absolute Maximum Ratings  
TA = 27(unless otherwise noted)(1)  
MIN  
MAX  
35  
UNIT  
A
IEC 61000-4-5 Current (8/20 µs)  
IEC 61000-4-5 Power (8/20 µs)  
1330  
4
W
A
IEC 61643-321 Current (10/1000 µs) - WCSP  
Maximum  
Surge  
IEC 61643-321 Power (10/1000 µs) - WCSP  
IEC 61643-321 Current (10/1000 µs) - DRV  
IEC 61643-321 Power (10/1000 µs) - DRV  
IEC 61000-4-5 Current (8/20 µs)  
IEC 61000-4-5 Power (8/20 µs)  
IEC 61643-321 Current (10/1000 µs)  
IEC 61643-321 Power (10/1000 µs)  
IEC 61000-4-4 EFT Protection  
150  
3.5  
125  
50  
W
A
W
A
80  
W
A
Maximum  
Forward Surge  
23  
60  
W
A
EFT  
IBR  
IF  
80  
DC Breakdown Current - DRV  
10  
mA  
mA  
°C  
°C  
DC Forward Current  
500  
125  
150  
TA  
Ambient Operating Temperature  
Storage Temperature  
-40  
-65  
Tstg  
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
7.2 ESD Ratings - JEDEC  
VALUE  
UNIT  
Human body model (HBM), per  
±2000  
ANSI/ESDA/JEDEC JS-001, all pins(1)  
V(ESD)  
Electrostatic discharge  
V
Charged device model (CDM), per JEDEC  
specification JESD22-C101, all pins(2)  
±500  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
7.3 ESD Ratings - IEC  
VALUE  
UNIT  
IEC 61000-4-2 contact discharge  
IEC 61000-4-2 air-gap discharge  
±11  
±30  
V(ESD)  
Electrostatic discharge  
kV  
7.4 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
MIN  
NOM  
MAX  
UNIT  
VRWM  
Reverse Stand-off Voltage  
33  
V
7.5 Thermal Information  
TVS3300  
THERMAL METRIC(1)  
YZF (WCSP)  
DRV (SON)  
UNIT  
4 PINS  
173.8  
1.7  
6 PINS  
70.4  
RqJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
°C/W  
°C/W  
RqJC(top)  
73.7  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
Copyright © 2017–2018, Texas Instruments Incorporated  
5
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
Thermal Information (continued)  
TVS3300  
THERMAL METRIC(1)  
YZF (WCSP)  
4 PINS  
47.1  
DRV (SON)  
6 PINS  
40  
UNIT  
RqJB  
YJT  
Junction-to-board thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
9.5  
2.2  
YJB  
47.1  
40.3  
RqJC(bot)  
N/A  
11  
7.6 Electrical Characteristics  
over operating free-air temperature range (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
19  
MAX  
UNIT  
nA  
nA  
V
Measured at VIN = VRWM, TA = 27°C  
Measured at VIN = VRWM, TA = 85°C  
IIN = 1 mA from GND to IO  
150  
600  
0.65  
39  
ILEAK  
Leakage Current  
28  
VF  
Forward Voltage  
0.25  
34  
0.5  
35.8  
VBR  
Break-down Voltage  
IIN = 1 mA from IO to GND  
V
35 A IEC 61000-4-5 Surge (8/20 µs)  
from GND to IO, 27°C  
VFCLAMP Forward Clamp Voltage  
1
34  
34  
2
5
V
15 A IEC 61000-4-5 Surge (8/20 µs)  
from IO to GND, VIN = 0 V before surge,  
27°C  
37  
40  
V
VCLAMP  
Clamp Voltage  
35 A IEC 61000-4-5 Surge (8/20 µs) from  
IO to GND, VIN = 0 V before surge, 27°C  
38  
40  
40  
60  
V
Calculated from VCLAMP at 15 A and 30  
A surge current levels, 27°C  
RDYN  
8/20 µs surge dynamic resistance  
m  
VIN = 12 V, f = 1 MHz, 30 mVpp, IO to  
GND  
CIN  
SR  
Input pin capacitance  
Maximum Slew Rate  
110  
130  
2.5  
150  
pF  
0-VRWM rising edge, sweep rise time and  
measure slew rate when IPEAK = 1 mA,  
27°C  
V/µs  
0-VRWM rising edge, sweep rise time and  
measure slew rate when IPEAK = 1 mA,  
105°C  
0.7  
V/µs  
6
版权 © 2017–2018, Texas Instruments Incorporated  
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
7.7 Typical Characteristics  
40  
40  
35  
30  
25  
20  
15  
10  
5
Voltage  
Current  
Current  
Voltage at -40èC  
Voltage at 25èC  
Voltage at 85èC  
35  
30  
25  
20  
15  
10  
5
0
0
-50x10-6  
-40x10-6  
-30x10-6  
Time (s)  
-20x10-6  
-10x10-6  
0x100  
100x10-6  
200x10-6  
Time (s)  
300x10-6  
400x10-6  
D001  
D006  
1. 8/20 µs Surge Response at 35 A  
2. 8/20 µs Surge Response at 35 A Across Temperature  
100x10-9  
180  
160  
140  
120  
100  
80  
90x10-9  
80x10-9  
70x10-9  
60x10-9  
50x10-9  
40x10-9  
30x10-9  
20x10-9  
10x10-9  
0x100  
60  
Vbias = 5 V  
Vbias = 12 V  
Vbias = 20 V  
Vbias = 25 V  
Vbias = 33 V  
40  
20  
0
-40  
-20  
0
20  
40  
60  
80  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
100 120  
Temperature (èC)  
Temperature (èC)  
Fig3  
D004  
f = 1 MHz, 30 mVpp, IO to GND  
3. Capacitance vs Temperature Across Bias  
4. Leakage Current vs Temperature at 33 V  
1.5x10-3  
1x10-3  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
500x10-6  
0x100  
-500x10-6  
-1x10-3  
TA = -40èC  
TA = 25èC  
TA = 85èC  
-1.5x10-3  
0
-40  
-2  
3
8
13  
18  
23  
28  
33  
38  
-20  
0
20  
40  
60  
80  
100 120 140  
Voltage (V)  
D005  
Temperature (°C)  
D006  
5. I/V Curve Across Temperature  
6. Forward Voltage vs Temperature  
版权 © 2017–2018, Texas Instruments Incorporated  
7
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
Typical Characteristics (接下页)  
35  
40  
36  
32  
28  
24  
20  
16  
12  
8
34.8  
34.6  
34.4  
34.2  
34  
4
33.8  
0
-40  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100 120 140  
Temperature (èC)  
Fig2  
Temperature (èC)  
D016  
7. Breakdown Voltage (1 mA) vs Temperature  
8. Max Surge Current (8/20 µs) vs Temperature  
100  
Leakage (-40èC)  
Leakage (25èC)  
Leakage (85èC)  
Leakage (105èC)  
Leakage (125èC)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7  
3
Slew Rate (V/ms)  
D009  
9. Dynamic Leakage vs Signal Slew Rate across Temperature  
8
版权 © 2017–2018, Texas Instruments Incorporated  
 
 
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
8 Detailed Description  
8.1 Overview  
The TVS3300 is a precision clamp with a low, flat clamping voltage during transient overvoltage events like surge  
and protecting the system with zero voltage overshoot.  
8.2 Functional Block Diagram  
IN  
Voltage Level  
Detection  
Power FET  
Driver  
GND  
Copyright © 2017, Texas Instruments Incorporated  
8.3 Feature Description  
The TVS3300 is a precision clamp that handles 35 A of IEC 61000-4-5 8/20 µs surge pulse. The flat clamping  
feature helps keep the clamping voltage very low to keep the downstream circuits from being stressed. The flat  
clamping feature can also help end-equipment designers save cost by opening up the possibility to use lower-  
cost, lower voltage tolerant downstream ICs. The TVS3300 has minimal leakage under the standoff voltage of 33  
V, making it an ideal candidate for applications where low leakage and power dissipation is a necessity. IEC  
61000-4-2 and IEC 61000-4-4 ratings make it a robust protection solution for ESD and EFT events. Wide  
ambient temperature range of –40°C to +125°C a good candidate for most applications. Compact packages  
enable it to be used in small devices and save board area.  
8.4 Reliability Testing  
To ensure device reliability, the TVS3300 is characterized against 4000 repetitive pulses of 30 A IEC 61000-4-5  
8/20 µs surge pulses at 125°C. The test is performed with less than 10 seconds between each pulse at high  
temperature to simulate worst case scenarios for fault regulation. After each surge pulse, the TVS3300 clamping  
voltage, breakdown voltage, and leakage are recorded to ensure that their is no variation or performance  
degradation. By ensuring robust, reliable, high temperature protection, the TVS3300 enables fault protection in  
applications that must withstand years of continuous operation with no performance change.  
8.5 Device Functional Modes  
8.5.1 Protection Specifications  
The TVS3300 is specified according to both the IEC 61000-4-5 and IEC 61643-321 standards. This enables  
usage in systems regardless of which standard is required in relevant product standards or best matches  
measured fault conditions. The IEC 61000-4-5 standards requires protection against a pulse with a rise time of 8  
µs and a half length of 20 µs, while the IEC 61643-321 standard requires protection against a much longer pulse  
with a rise time of 10 µs and a half length of 1000 µs.  
版权 © 2017–2018, Texas Instruments Incorporated  
9
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
Device Functional Modes (接下页)  
The positive and negative surges are imposed to the TVS3300 by a combinational waveform generator (CWG)  
with a 2-Ω coupling resistor at different peak voltage levels. For powered on transient tests that need power  
supply bias, inductances are usually used to decouple the transient stress and protect the power supply. The  
TVS3300 is post tested by assuring that there is no shift in device breakdown or leakage at Vrwm  
.
In addition, the TVS3300 has been tested according to IEC 61000-4-5 to pass a ±1 kV surge test through a 42-Ω  
coupling resistor and a 0.5 µF capacitor. This test is a common test requirement for industrial signal I/O lines and  
the TVS3300 will serve an ideal protection solution for applications with that requirement.  
The TVS3300 allow integrates IEC 61000-4-2 level 4 ESD Protection and 80 A of IEC 61000-4-4 EFT Protection.  
These combine to ensure that the device can protect against most transient conditions regardless of length or  
type.  
For more information on TI's test methods for Surge, ESD, and EFT testing, reference TI's IEC 61000-4-x  
Testing Application Note  
8.5.2 Minimal Derating  
Unlike traditional diodes the TVS3300 has very little derating of max power dissipation and ensures robust  
performance up to 125°C, shown in 8. Traditional TVS diodes lose up to 50% of their current carrying  
capability when at high temperatures, so a surge pulse above 85°C ambient can cause failures that are not seen  
at room temperature. The TVS3300 prevents this and ensures that you will see the same level of protection  
regardless of temperature.  
8.5.3 Transient Performance  
During large transient swings, the TVS3300 will begin clamping the input signal to protect downstream  
conditions. While this prevents damage during fault conditions, it can cause leakage when the intended input  
signal has a fast slew rate. In order to keep power dissipation low and remove the chance of signal distortion, it  
is recommended to keep the slew rate of any input signal on the TVS3300 below 2.5 V/µs at room temperature  
and below 0.7 V/µs at 125°C shown in 9. Faster slew rates will cause the device to clamp the input signal and  
draw current through the device for a few microseconds, increasing the rise time of the signal. This will not cause  
any harm to the system or to the device, however if the fast input voltage swings occur regularly it can cause  
device overheating.  
10  
版权 © 2017–2018, Texas Instruments Incorporated  
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
9 Application and Implementation  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
9.1 Application Information  
The TVS3300 can be used to protect any power, analog, or digital signal from transient fault conditions caused  
by the environment or other electrical components.  
9.2 Typical Application  
10. TVS3300 Application Schematic  
9.2.1 Design Requirements  
A typical operation for the TVS3300 would be protecting an analog output module on a PLC similar to 10. In  
this example, the TVS3300 is protecting a 4-20 mA transmitter that uses the XTR115, a standard transmitter that  
has a nominal voltage of 24 V and a maximum input voltage of 40 V. Most industrial interfaces such as this  
require protection against ±1 kV surge test through a 42-Ω coupling resistor and a 0.5 µF capacitor, equaling  
roughly 24 A of surge current. Without any input protection, if a surge event is caused by lightning, coupling,  
ringing, or any other fault condition this input voltage will rise to hundreds of volts for multiple microseconds,  
violating the absolute maximum input voltage and harming the device. An ideal surge protection diode will  
maximize the useable voltage range while still clamping at a safe level for the system, TI's Flat-Clamp technology  
provides the best protection solution.  
9.2.2 Detailed Design Procedure  
If the TVS3300 is in place to protect the device, during a surge event the voltage will rise to the breakdown of the  
diode at 35.8 V, and then the TVS3300 will turn on, shunting the surge current to ground. With the low dynamic  
resistance of the TVS3300, large amounts of surge current will have minimal impact on the clamping voltage.  
The dynamic resistance of the TVS3300 is around 40 mΩ, which means 24 A of surge current will cause a  
voltage raise of 24 A × 40 m= 0.96 V. Because the device turns on at 35.8 V, this means the XTR115 input will  
be exposed to a maximum of 35.8 V + 0.96 V = 36.76 V during surge pulses, well within the absolute maximum  
input voltage. This ensures robust protection of your circuit.  
版权 © 2017–2018, Texas Instruments Incorporated  
11  
 
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
Typical Application (接下页)  
The small size of the device also improves fault protection by lowering the effect of fault current coupling onto  
neighboring traces. The small form factor of the TVS3300 allows the device to be placed extremely close to the  
input connector, lowering the length of the path fault current will take through the system compared to larger  
protection solutions.  
Finally, the low leakage of the TVS3300 will have low input power losses. At 33 V, the device will see typical 19  
nA leakage for a constant power dissipation of less than 100 µW, a small quantity that will minimally effect  
overall efficiency metrics and heating concerns.  
9.2.3 PLC Surge Protection Reference Design  
For a detailed description of the TVS3300 advantages in a PLC Analog Input Module, reference TI's Surge  
Protection Reference Design for PLC Analog Input Module This document describes the considerations and  
performance of the TVS3300 in a common industrial application.  
9.2.4 Configuration Options  
The TVS3300 can be used in either unidirectional or bidirectional configuration. By placing two TVS3300's in  
series with reverse orientation bidirectional operation can be used, allowing a working voltage of ±33 V. TVS3300  
operation in bidirectional will be similar to unidirectional operation, with a minor increase in breakdown voltage  
and clamping voltage. The TVS3300 bidirectional performance has been characterized in the TVS3300  
Configurations Characterization.  
10 Power Supply Recommendations  
The TVS3300 is a clamping device so there is no need to power it. To ensure the device functions properly do  
not violate the recommended VIN voltage range (0 V to 33 V) .  
12  
版权 © 2017–2018, Texas Instruments Incorporated  
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
11 Layout  
11.1 Layout Guidelines  
The optimum placement is close to the connector. EMI during an ESD event can couple from the trace being  
struck to other nearby unprotected traces, resulting in early system failures. The PCB designer must minimize  
the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are  
between the TVS and the connector.  
Route the protected traces straight.  
Eliminate any sharp corners on the protected traces between the TVS3300 and the connector by using rounded  
corners with the largest radii possible. Electric fields tend to build up on corners, increasing EMI coupling.  
11.2 Layout Example  
11. TVS3300 WCSP Layout  
版权 © 2017–2018, Texas Instruments Incorporated  
13  
TVS3300  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
www.ti.com.cn  
Layout Example (接下页)  
GND Plane  
Protected  
Input  
Connector  
Input  
GND  
12. TVS3300 SON Layout  
14  
版权 © 2017–2018, Texas Instruments Incorporated  
TVS3300  
www.ti.com.cn  
ZHCSFZ9C FEBRUARY 2017REVISED FEBRUARY 2018  
12 器件和文档支持  
12.1 文档支持  
12.1.1 相关文档  
如需相关文档,请参阅:  
平缓钳位 TVS 评估套件  
适用于 PLC 模拟输入模块的浪涌保护参考设计  
TVS3300 评估模块用户指南》  
TVS3300DRV 评估模块用户指南》  
12.2 接收文档更新通知  
要接收文档更新通知,请导航至 TI.com 上的器件产品文件夹。请单击右上角的提醒我 进行注册,即可每周接收产  
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。  
12.3 社区资源  
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商按照原样提供。这些内容并不构成 TI 技术规范,  
并且不一定反映 TI 的观点;请参阅 TI 《使用条款》。  
TI E2E™ 在线社区 TI 的工程师对工程师 (E2E) 社区。此社区的创建目的在于促进工程师之间的协作。在  
e2e.ti.com 中,您可以咨询问题、分享知识、拓展思路并与同行工程师一道帮助解决问题。  
设计支持  
TI 参考设计支持 可帮助您快速查找有帮助的 E2E 论坛、设计支持工具以及技术支持的联系信息。  
12.4 商标  
E2E is a trademark of Texas Instruments.  
12.5 静电放电警告  
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可  
能会损坏集成电路。  
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可  
能会导致器件与其发布的规格不相符。  
12.6 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
13 机械、封装和可订购信息  
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知和修  
订此文档。如欲获取此数据表的浏览器版本,请参阅左侧的导航。  
版权 © 2017–2018, Texas Instruments Incorporated  
15  
PACKAGE OPTION ADDENDUM  
www.ti.com  
28-Sep-2021  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
TVS3300DRVR  
TVS3300YZFR  
ACTIVE  
ACTIVE  
WSON  
DRV  
YZF  
6
4
3000 RoHS & Green  
3000 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 125  
-40 to 125  
17JH  
15K  
DSBGA  
SNAGCU  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
28-Sep-2021  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
14-Feb-2018  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TVS3300DRVR  
TVS3300YZFR  
WSON  
DRV  
YZF  
6
4
3000  
3000  
180.0  
180.0  
8.4  
8.4  
2.3  
2.3  
1.15  
0.72  
4.0  
2.0  
8.0  
8.0  
Q2  
Q1  
DSBGA  
1.17  
1.22  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
14-Feb-2018  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
TVS3300DRVR  
TVS3300YZFR  
WSON  
DRV  
YZF  
6
4
3000  
3000  
210.0  
182.0  
185.0  
182.0  
35.0  
20.0  
DSBGA  
Pack Materials-Page 2  
GENERIC PACKAGE VIEW  
DRV 6  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
Images above are just a representation of the package family, actual package may vary.  
Refer to the product data sheet for package details.  
4206925/F  
PACKAGE OUTLINE  
DRV0006A  
WSON - 0.8 mm max height  
SCALE 5.500  
PLASTIC SMALL OUTLINE - NO LEAD  
2.1  
1.9  
A
B
PIN 1 INDEX AREA  
2.1  
1.9  
0.8  
0.7  
C
SEATING PLANE  
0.08 C  
(0.2) TYP  
0.05  
0.00  
1
0.1  
EXPOSED  
THERMAL PAD  
3
4
6
2X  
7
1.3  
1.6 0.1  
1
4X 0.65  
0.35  
0.25  
6X  
PIN 1 ID  
(OPTIONAL)  
0.3  
0.2  
6X  
0.1  
C A  
C
B
0.05  
4222173/B 04/2018  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DRV0006A  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
6X (0.45)  
6X (0.3)  
(1)  
1
7
6
SYMM  
(1.6)  
(1.1)  
4X (0.65)  
4
3
SYMM  
(1.95)  
(R0.05) TYP  
(
0.2) VIA  
TYP  
LAND PATTERN EXAMPLE  
SCALE:25X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
SOLDER MASK  
OPENING  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4222173/B 04/2018  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature  
number SLUA271 (www.ti.com/lit/slua271).  
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DRV0006A  
WSON - 0.8 mm max height  
PLASTIC SMALL OUTLINE - NO LEAD  
SYMM  
7
6X (0.45)  
METAL  
1
6
6X (0.3)  
(0.45)  
SYMM  
4X (0.65)  
(0.7)  
4
3
(R0.05) TYP  
(1)  
(1.95)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD #7  
88% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE  
SCALE:30X  
4222173/B 04/2018  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
www.ti.com  
PACKAGE OUTLINE  
YZF0004  
DSBGA - 0.625 mm max height  
SCALE 14.000  
DIE SIZE BALL GRID ARRAY  
A
B
E
BALL A1  
CORNER  
D
0.625 MAX  
C
SEATING PLANE  
0.05 C  
BALL TYP  
0.35  
0.15  
0.5  
B
A
SYMM  
0.5  
D: Max = 1.146 mm, Min =1.086 mm  
E: Max = 1.092 mm, Min =1.032 mm  
1
2
0.35  
0.25  
SYMM  
4X  
0.015  
C A B  
4223221/A 08/2016  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
YZF0004  
DSBGA - 0.625 mm max height  
DIE SIZE BALL GRID ARRAY  
(0.5)  
4X ( 0.245)  
1
2
A
B
SYMM  
(0.5)  
SYMM  
LAND PATTERN EXAMPLE  
SCALE:40X  
0.05 MAX  
0.05 MIN  
(
0.245)  
METAL  
METAL UNDER  
SOLDER MASK  
(
0.245)  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
NON-SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
NOT TO SCALE  
4223221/A 08/2016  
NOTES: (continued)  
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.  
See Texas Instruments Literature No. SNVA009 (www.ti.com/lit/snva009).  
www.ti.com  
EXAMPLE STENCIL DESIGN  
YZF0004  
DSBGA - 0.625 mm max height  
DIE SIZE BALL GRID ARRAY  
(0.5) TYP  
4X ( 0.25)  
(R0.05) TYP  
2
1
A
B
SYMM  
(0.5) TYP  
METAL  
TYP  
SYMM  
SOLDER PASTE EXAMPLE  
BASED ON 0.1 mm THICK STENCIL  
SCALE:50X  
4223221/A 08/2016  
NOTES: (continued)  
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.  
www.ti.com  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担  
保。  
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。  
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。  
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成  
本、损失和债务,TI 对此概不负责。  
TI 提供的产品受 TI 的销售条款ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改  
TI 针对 TI 产品发布的适用的担保或担保免责声明。  
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE  
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2022,德州仪器 (TI) 公司  

相关型号:

TVS3300YZFR

33V 平缓钳位浪涌保护器件 | YZF | 4 | -40 to 125
TI

TVS3301

33V 双向平缓钳位浪涌保护器件
TI

TVS3301DRBR

33V 双向平缓钳位浪涌保护器件 | DRB | 8 | -40 to 125
TI

TVS348

TRANSIENT VOLTAGE SUPPRESORS
MICROSEMI

TVS348

Diode TVS Single 48V 150W 2-Pin Case A
NJSEMI

TVS348E3

Trans Voltage Suppressor Diode, 150W, 48V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, MINIATURE, GLASS PACKAGE-2
MICROSEMI

TVS348HR

Trans Voltage Suppressor Diode
DIGITRON

TVS348SM

Transient Voltage Suppressor
MICROSEMI

TVS348SME3

Trans Voltage Suppressor Diode, 150W, 48V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2
MICROSEMI

TVS3527

35 AMP OVERVOLTAGE TRANSIENT SUPPRESSORS
DEC

TVS3527D

35 AMP OVERVOLTAGE TRANSIENT DISH DIODE
DEC

TVS3527S

35 AMP OVERVOLTAGE TRANSIENT SUPPRESSORS
DEC