UCC25630-2DDBR [TI]

支持低待机功耗且具有高压启动功能的 LLC 谐振控制器 | DDB | 14 | -40 to 125;
UCC25630-2DDBR
型号: UCC25630-2DDBR
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

支持低待机功耗且具有高压启动功能的 LLC 谐振控制器 | DDB | 14 | -40 to 125

控制器 高压 开关 光电二极管
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UCC256302  
SLUSD69 NOVEMBER 2017  
UCC256302 LLC Resonant Controller with High Voltage Startup  
Enabling Low Standby Power  
1 Features  
3 Description  
The UCC256302 is a fully featured LLC controller  
with integrated high-voltage gate driver. It has been  
designed for use in offline AC-DC or isolated DC-DC  
1
Integrated High Voltage Startup  
Eliminates Need for External  
Bias Supply  
to provide  
a complete power system using a  
Best-in-Class Transient Response  
Hybrid Hysteretic Control (HHC)  
minimum of external components. The resulting  
power system is designed to meet the most stringent  
requirements for standby power without the need for  
a separate standby power converter.  
Best-in-Class Transient Response  
Easy Compensation Design  
UCC256302 includes an integrated, high voltage  
startup function which eliminates the need for an  
external bias supply, reducing BOM count and  
minimizing solution size. UCC256302 uses hybrid  
hysteretic control to provide best in class line and  
load transient response. The control makes the open  
loop transfer function a first order system so that it’s  
very easy to compensate.  
Optimized Low Power Features Enable 75 mW  
Standby Power Design with PFC on  
Advanced Burst Mode  
Opto-Coupler Low Power Operation  
Helps Enable Compliance to CoC Tier II  
Standard  
Fast Exit from Burst Mode  
UCC256302 provides a high efficient burst mode with  
consistent burst power level during each burst on  
cycle. The burst power level is programmable and  
adaptively changes with input voltage, making the  
optimization of efficiency very easy.  
Improved Capacitive Region Avoidance Scheme  
Adaptive Dead-Time  
Internal High-Side Gate Drivers  
(0.6-A and 1.2-A Capability)  
Robust Soft Start with No Hard Switching  
Select the appropriate LLC resonant controller for  
your design with UCC25630x Selection Guide  
Over Temperature, Output Over Voltage, Input  
Over and Under Voltage Protection with  
Three Levels of Over Current Protections  
Device Information(1)  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
Wide Operating Frequency Range  
(35 kHz to 1 MHz)  
UCC256302  
SOIC (14)  
9.9 mm x 3.9 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
Select the appropriate LLC resonant controller for  
your design with UCC25630x Selection  
GuideUCC25630x Selection Guide  
Simplified Schematic  
Create a Custom Design Using the UCC256302  
With the WEBENCH® Power Designer  
2 Applications  
Digital TV SMPS  
AC-DC Adapter  
Multi-Functional Printers  
Projectors  
Merchant DC-to-DC  
High Power Battery Charging  
DIN Rail Power Supply  
Multi-Axis Servo  
ATX Power Supply  
Appliances  
LED Lighting Applications  
Industrial AC-DC  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
UCC256302  
SLUSD69 NOVEMBER 2017  
www.ti.com  
Table of Contents  
7.1 Application Information............................................ 42  
7.2 Typical Application ................................................. 42  
Power Supply Recommendations...................... 56  
8.1 VCC Pin Capacitor.................................................. 56  
8.2 Boot Capacitor ........................................................ 56  
8.3 RVCC Pin Capacitor ............................................... 57  
Layout ................................................................... 58  
9.1 Layout Guidelines ................................................... 58  
9.2 Layout Example ...................................................... 58  
1
2
3
4
5
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Pin Configuration and Functions......................... 3  
Specifications......................................................... 4  
5.1 Absolute Maximum Ratings ...................................... 4  
5.2 ESD Ratings.............................................................. 4  
5.3 Recommended Operating Conditions....................... 4  
5.4 Thermal Information.................................................. 5  
5.5 Electrical Characteristics........................................... 5  
5.6 Switching Characteristics.......................................... 7  
5.7 Typical Characteristics.............................................. 8  
Detailed Description ............................................ 13  
6.1 Overview ................................................................. 13  
6.2 Functional Block Diagram ....................................... 15  
6.3 Feature Description................................................. 16  
6.4 Device Functional Modes........................................ 29  
Application and Implementation ........................ 42  
8
9
10 Device and Documentation Support ................. 59  
10.1 Device Support...................................................... 59  
10.2 Documentation Support ....................................... 59  
10.3 Receiving Notification of Documentation Updates 59  
10.4 Community Resources.......................................... 59  
10.5 Trademarks........................................................... 59  
10.6 Electrostatic Discharge Caution............................ 59  
10.7 Glossary................................................................ 60  
6
7
11 Mechanical, Packaging, and Orderable  
Information ........................................................... 60  
2
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4 Pin Configuration and Functions  
DDB Package  
16-Pin SOIC  
Top View  
1
HV  
16  
15  
14  
HS  
HO  
HB  
3
4
5
6
7
8
VCC  
UCC256302  
LLC  
Controller  
BLK  
FB  
RVCC  
GND  
12  
11  
10  
9
ISNS  
VCR  
LO  
LL/SS  
BW  
Pin Functions  
PIN  
I/O  
DESCRIPTION  
NAME  
NO.  
This pin is used to sense the PFC output voltage level. A resistive divider should be used to  
attenuate the signal before it is applied to this pin. The voltage level on this pin will determine  
when the LLC converter start/stops switching. The sensed BLK voltage is also used to adjust  
the burst mode threshold to improve efficiency over the input voltage range.  
BLK  
4
I
I
This pin is used to sense the output voltage through the bias winding. The sensed voltage is  
used for output over voltage protection.  
BW  
8
LLC stage control feedback input. The amount of current sourced from this pin will determine  
the LLC input power level.  
FB  
5
I
GND  
11  
G
Ground reference for all signals.  
High-side gate-drive floating supply voltage. The bootstrap capacitor is connected between  
this pin and pin HS. A high voltage, high speed diode should be connected from RVCC to  
this pin to supply power to the upper MOSFET driver during the period when the lower  
MOSFET is conducting.  
HB  
14  
I
HO  
HS  
15  
16  
O
I
High-side floating gate-drive output.  
High-side gate-drive floating ground. Current return for the high-side gate-drive current.  
Connects to Internal HV startup JFET. This pin provides start up power for both PFC and  
LLC stage.  
HV  
1
6
I
I
Resonant current sense. The resonant capacitor voltage is differentiated with a first order  
filter to measure the resonant current  
ISNS  
The capacitance value connected from this pin to ground will define the duration of the soft-  
start period. This pin is also used to program the burst mode threshold; the resistor divider  
on this pin programs the burst mode threshold and the threshold scaling factor with BLK pin  
voltage.  
LL/SS  
9
I
LO  
10  
2
O
N/A  
N/A  
P
Low-side gate-drive output.  
Missing  
Missing  
RVCC  
VCC  
Functional creepage and clearance  
Functional creepage and clearance  
Regulated 12-V supply. This pin is used to supply the gate driver and PFC controller.  
Supply input.  
13  
12  
3
P
VCR  
7
I
Resonant capacitor voltage sense  
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5 Specifications  
5.1 Absolute Maximum Ratings  
Over operating free-air temperature range (unless otherwise noted), all voltageages are with respect to GND, currents are  
positive into and negative out of the specified terminal.(1)  
MIN  
MAX  
UNIT  
V
Input voltage  
HV, HB  
BLK, FB, LL/SS  
VCR  
-0.3  
-0.3  
-0.3  
-0.3  
-0.3  
-5  
640  
7
V
7
V
HB - HS  
VCC  
17  
30  
7
V
V
BW, ISNS  
DC  
V
RVCC output  
voltage  
-0.3  
17  
V
DC  
HS – 0.3  
HS - 2  
-0.3  
HB + 0.3  
HB + 0.3  
HO output voltage  
LO output voltage  
V
V
Transient, less than 100ns  
DC  
RVCC + 0.3  
RVCC + 0.3  
Transient, less than 100ns  
-2  
Floating ground  
slew rate  
dVHS/dt  
-50  
50  
V/ns  
A
HO, LO pulsed  
current  
IOUT_PULSED  
-0.6  
1.2  
Junction  
temperature  
range  
TJ  
-40  
-65  
150  
150  
Storage  
temperature  
range  
°C  
Tstg  
Soldering, 10 second  
Reflow  
300  
260  
Lead temperature  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
5.2 ESD Ratings  
VALUE  
UNIT  
Human body model (HBM), per  
ANSI/ESDA/JEDEC JS-001, high  
voltage pins(1)  
±1000  
Human body model (HBM), per  
ANSI/ESDA/JEDEC JS-001, all other  
pins(1)  
V(ESD)  
Electrostatic discharge  
±2000  
±500  
V
Charged device model (CDM), per  
JEDEC specification JESD22-C101, all  
pins(2)  
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
5.3 Recommended Operating Conditions  
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, currents are positive into and negative out of the specified  
terminal, unless otherwise noted.  
MIN  
NOM  
MAX  
600  
26  
UNIT  
HV, HS  
VCC  
Input voltage  
V
V
V
Supply voltage  
13  
10  
15  
12  
HB - HS  
Driver bootstrap voltage  
16  
4
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Recommended Operating Conditions (continued)  
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, currents are positive into and negative out of the specified  
terminal, unless otherwise noted.  
MIN  
0.1  
NOM  
MAX  
UNIT  
µF  
CB  
Ceramic bypass capacitor from HB to HS  
RVCC pin decoupling capacitor  
5
CRVCC  
IRVCCMAX  
TA  
4.7  
µF  
(1)  
Maximum output current of RVCC  
100  
125  
mA  
°C  
Operating ambient temperature  
-40  
(1) Not tested in production. Insured by characterization  
5.4 Thermal Information  
UCC25630  
THERMAL METRIC(1)  
D (SOIC)  
14 PINS  
74.7  
UNIT  
RθJA  
RθJC(top)  
RθJB  
ΨJT  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
30.7  
31.8  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
4.4  
ΨJB  
31.4  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report, SPRA953.  
5.5 Electrical Characteristics  
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =15V, currents are positive into and negative out of the  
specified terminal, unless otherwise noted.  
PARAMETER  
SUPPLY VOLTAGE  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Below this threshold, use reduced  
start up current  
VCCShort  
0.5  
10.2  
25  
0.6  
10.5  
26  
0.7  
10.8  
28  
V
V
V
VCCReStartJfet Below this threshold, re-enable JFET.  
In self bias mode, gate starts switching  
above this level  
VCCStartSelf  
SUPPLY CURRENT  
Current drawn from VCC rail during  
burst off period  
ICCSleep  
VCC = 15V  
475  
565  
2.2  
700  
µA  
Current drawn from VCC Pin while  
gate is switching. Excluding Gate  
Current  
ICCRun  
VCC = 15V, maximum dead time  
1.75  
2.65  
mA  
REGULATED SUPPLY  
Regulated supply voltage  
VCC = 15V  
VCC = 13V  
11.60  
11.2  
12  
11.8  
7
12.40  
12.25  
V
V
V
VRVCC  
VRVCCUVLO  
RVCC under voltage lock out voltage  
(1)  
HIGH VOLTAGE STARTUP  
IHVLow  
IHVHigh  
IHVLeak  
Reduced startup pin current  
0.28  
7.6  
0.41  
10.20  
3.37  
0.54  
12.6  
7.55  
mA  
mA  
µA  
Full startup pin current  
HV current source leakage current  
1.40  
BULK VOLTAGE SENSE  
Input voltage that allows LLC to start  
switching  
VBLKStart  
Voltage rising  
2.99  
3.05  
3.095  
V
(1) Not tested in production. Insured by characterization  
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Electrical Characteristics (continued)  
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =15V, currents are positive into and negative out of the  
specified terminal, unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Input voltage that forces LLC  
operation to stop  
VBLKStop  
Voltage falling  
2.13  
2.17  
2.23  
V
Input voltage that causes switching to  
stop  
VBLKOVRise  
VBLKOVFall  
Voltage rising  
Voltage falling  
3.94  
3.64  
4.03  
3.76  
4.11  
3.86  
V
V
Input voltage that causes switching to  
re-start  
FEEDBACK PIN  
RFBInternal Internal pull down resistor value  
IFB  
90.7  
76.5  
1
101.5  
85.1  
112.3  
93.6  
kΩ  
µA  
FB internal current source  
f-3dB  
Feedback chain -3dB cut off frequency  
MHz  
(2)  
RESONANT CURRENT SENSE  
VISNS_OCP1 OCP1 threshold  
3.97  
4.03  
5
4.07  
V
V
(1)  
VISNS_OCP1_S OCP1 threshold during soft start  
S
VISNS_OCP2  
VISNS_OCP3  
OCP2 threshold  
OCP3 threshold  
0.68  
0.49  
0.84  
0.64  
0.99  
0.79  
V
V
The time the average input current  
needs to stay above OCP2 threshold  
before OCP2 is triggered  
TISNS_OCP2  
2
ms  
(1)  
The time the average input current  
needs to stay above OCP3 threshold  
before OCP3 is triggered  
TISNS_OCP3  
50  
ms  
(1)  
Resonant current polarity detection  
hysteresis  
VIpolarityHyst  
nOCP1  
16.9  
30.7  
4
44.7  
mV  
Number of OCP1 cycles before OCP1  
(1)  
fault is tripped  
RESONANT CAPACITOR VOLTAGE SENSE  
VCM  
Internal common mode voltage  
2.91  
1.63  
3.02  
1.84  
3.14  
2.10  
1.25  
V
mA  
%
Frequency compensation ramp current  
source value  
IRAMP  
IMismatch  
Pull up and pull down ramp current  
-1.25  
(3)  
source mismatch  
SOFT START  
Current output from SS pin to charge  
up the soft start capacitor  
ISSUp  
21.8  
222  
25.8  
401  
29.8  
580  
µA  
RSSDown  
SS pin pull down resistance  
ZCS or OCP1  
GATE DRIVER  
VLOL  
LO output low voltage  
Isink = 20mA  
Isource = 20mA  
Isink = 20mA  
Isource = 20mA  
0.027  
0.113  
0.027  
0.113  
7.35  
0.052  
0.178  
0.053  
0.173  
7.94  
0.087  
0.263  
0.087  
0.263  
8.70  
V
V
V
V
V
VRVCC - VLOH LO output high voltage  
VHOL - VHS  
VHB - VHOH  
HO output low voltage  
HO output high voltage  
VHB-  
HSUVLORise  
High side gate driver UVLO rise  
threshold  
VHB-  
HSUVLOFall  
Isource_pk  
High side gate driver UVLO fall  
threshold  
6.65  
7.25  
7.76  
V
(2)  
HO, LO peak source current  
-0.6  
1.2  
A
A
(2)  
Isink_pk  
HO, LO peak sink current  
BOOTSTRAP  
(2) Not tested in production. Insured by design  
(3) IMismatch calculated as average of (IPD-(IPD+IPU)/(IPD+IPU)/2)) and (IPU-(IPD+IPU)/((IPD+IPU)/2)  
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Electrical Characteristics (continued)  
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =15V, currents are positive into and negative out of the  
specified terminal, unless otherwise noted.  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
IBOOT_QUIESC  
ENT  
(HB - HS) quiescent current  
HB - HS = 12V  
51.10  
74.40  
97.70  
µA  
IBOOT_LEAK  
HB to GND leakage current  
Length of charge boot state  
0.02  
234  
0.40  
267  
5.40  
296  
µA  
µs  
tChargeBoot  
BIAS WINDING  
VBWOVRise  
BURST MODE  
RLL  
Output voltage OVP  
-4.1  
240  
±1  
-3.97  
250  
-3.86  
258  
V
k  
V/ns  
s
LL voltage scaling resistor value  
ADAPTIVE DEADTIME  
(1)  
dVHS/dt  
Detectable PSN slew rate  
±50  
FAULT RECOVERY  
(1)  
tPauseTimeOut  
Paused timer  
1
THERMAL SHUTDOWN  
(1)  
TJ_r  
Thermal shutdown temperature  
Temperature rising  
125  
145  
20  
°C  
°C  
(1)  
TJ_H  
Thermal shutdown hsyterisis  
5.6 Switching Characteristics  
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =12V, currents are positive into and negative out of the  
specified terminal, unless otherwise noted.  
PARAMETER  
Rise time  
TEST CONDITIONS  
10% to 90%, 1nF load  
MIN  
18  
TYP  
35  
MAX  
50  
UNIT  
ns  
tr(LO)  
tf(LO)  
Fall time  
10% to 90%, 1nF load  
10% to 90%, 1nF load  
10% to 90%, 1nF load  
15  
25  
50  
ns  
tr(HO)  
tf(HO)  
tDT(min)  
Rise time  
18  
35  
50  
ns  
Fall time  
15  
25  
50  
ns  
(1)  
Minimum dead time  
100  
ns  
Maximum dead time (dead time fault)  
tDT(max)  
150  
µs  
(1)  
(1)  
tON(min)  
tON(max)  
Minimum gate on time  
250  
ns  
µs  
(1)  
Maximum gate on time  
14.5  
(1) Not tested in production. Insured by design  
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5.7 Typical Characteristics  
10.5  
10.4  
10.3  
10.2  
10.1  
10  
0.43  
0.42  
0.41  
0.4  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
0.39  
9.9  
9.8  
0.38  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D001  
D002  
Figure 1. IHVHigh vs Temperature  
Figure 2. IHVLow vs Temperature  
80  
60  
40  
20  
0
6
5
4
3
2
1
0
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
Dm0a0s3t  
D004  
Figure 3. IHVLeak vs Temperature  
Figure 4. IBOOT_QUIESCENT vs Temperature  
2.5  
2
1.88  
1.87  
1.86  
1.85  
1.84  
1.83  
1.82  
1.81  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
1.5  
1
0.5  
0
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
-0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D005  
D006  
Figure 5. IBOOT_LEAK vs Temperature  
Figure 6. IRAMP vs Temperature  
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Typical Characteristics (continued)  
252  
251  
250  
249  
248  
247  
1
0.8  
0.6  
0.4  
0.2  
0
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D007  
D008  
Figure 7. IMISMATCH vs Temperature  
Figure 8. RLL vs Temperature  
12.04  
12.02  
12  
12.2  
12  
11.8  
11.6  
11.4  
11.2  
11  
11.98  
11.96  
11.94  
11.92  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D009  
D001  
Figure 9. VRVCC vs Temperature  
Figure 10. VRVCC vs Temperature  
0.66  
0.64  
0.62  
0.6  
2.35  
2.3  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
2.25  
2.2  
0.58  
0.56  
0.54  
2.15  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
2.1  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D001  
D001  
Figure 11. iCCSleep vs Temperature  
Figure 12. ICCRun vs Temperature  
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Typical Characteristics (continued)  
3.04  
105  
104  
103  
102  
101  
100  
99  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
3.035  
3.03  
3.025  
3.02  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
3.015  
3.01  
98  
-50  
-25  
-25  
-25  
0
25  
50  
75  
100  
125  
150  
-60  
-35  
-25  
-25  
-10  
15  
40  
65  
90  
115  
140  
Temperature (èC)  
Temperature (èC)  
D001  
D001  
D001  
D001  
D001  
D002  
Figure 13. VCM vs Temperature  
Figure 14. RFB vs Temperature  
86.5  
86  
26.4  
26.2  
26  
85.5  
85  
25.8  
25.6  
25.4  
25.2  
84.5  
84  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
83.5  
-50  
0
25  
50  
75  
100  
125  
150  
-50  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
Figure 15. IFB vs Temperature  
Figure 16. ISSUp vs Temperature  
500  
8.15  
8.1  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
400  
300  
200  
100  
0
8.05  
8
7.95  
7.9  
7.85  
7.8  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
7.75  
-50  
0
25  
50  
75  
100  
125  
150  
-50  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
Figure 17. RSSDown vs Temperature  
Figure 18. IHB-HSUVLORise vs Temperature  
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Typical Characteristics (continued)  
80  
60  
40  
20  
0
7.29  
7.28  
7.27  
7.26  
7.25  
7.24  
7.23  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D002  
D002  
D002  
D002  
Figure 19. IHB-HSUVLOFall vs Temperature  
Figure 20. VLOL vs Temperature  
300  
80  
60  
40  
20  
0
250  
200  
150  
100  
50  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D002  
Figure 21. VRVCC-VLOH vs Temperature  
Figure 22. VHOL- VHS vs Temperature  
300  
250  
200  
150  
100  
50  
26.15  
26.1  
26.05  
26  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
0
-50  
25.95  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
Temperature (èC)  
D002  
Figure 23. VHB - VHOH vs Temperature  
Figure 24. VCCStartself vs Temperature  
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Typical Characteristics (continued)  
10.463  
10.46  
10.457  
10.454  
10.451  
VCC = 13 V  
VCC = 15 V  
VCC = 25 V  
10.448  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Temperature (èC)  
D002  
Figure 25. VCCReStartJfet vs Temperature  
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6 Detailed Description  
6.1 Overview  
The high level of integration of UCC256302 enables significant reduction in the list of materials and solution size  
without compromising functionality. UCC256302 achieves extremely low standby power using burst mode. The  
device's novel control scheme offers excellent transient performance and simplified compensation.  
Many consumer and industrial applications with mid-high power consumption, including large screen televisions,  
AC-DC adapters, server power supplies, and LED drivers, employ PFC + LLC power supplies because they offer  
improved efficiency, and small size, compared with a PFC + Flyback topology. A disadvantage of the PFC + LLC  
power supply system is that it naturally offers poor light load efficiency and high no-load power because the LLC  
stage requires a minimum amount of circulating current to maintain regulation. To meet light load efficiency and  
no load power requirement it is therefore necessary to use an auxiliary flyback converter that runs continuously  
and allows the main PFC + LLC power system to be shut down when the system enters low power or standby  
mode. UCC256302 LLC controller is designed to make a LLC power supply system with advanced control  
algorithm and high efficient burst mode. UCC256302 contains a number of novel features that enable it to offer  
excellent light load efficiency and no load power. This will allow customers to design power systems that meet  
150-mW no-load power target without needing an auxiliary flyback converter. UCC256302 includes a high-  
voltage startup JFET to initially charge the VCC capacitor to provide the energy needed to start the PFC and LLC  
power system. Once running, power for the PFC and LLC controllers is derived from a bias winding on the LLC  
transformer.  
UCC256302 uses a novel control algorithm, Hybrid Hysteretic Control (HHC), to achieve regulation. In this  
control algorithm, the switching frequency is defined by the resonant capacitor voltage, which carries accurate  
input current information. Therefore, the control effort controls the input current directly. This enables excellent  
load and line transient response, and high efficient burst mode. In addition, comparing with traditional Direct  
Frequency Control (DFC), HHC changes the system to a first order system. Therefore, the compensation design  
is much easier and can achieve higher loop bandwidth.  
UCC256302 includes robust algorithms for avoiding ZCS operation region. When near ZCS operation is  
detected, UCC256302 over-rides the feedback signal and ramps up the switching frequency until operation is  
restored. After which the switching frequency is ramped back down at a rate determined by the soft-start  
capacitor until control has been handed back to the voltage control loop.  
UCC256302 monitors the half-bridge switched node to determine the required dead-time in the gate signals for  
the outgoing and incoming power switches. In this way the dead-time is automatically adjusted to provide  
optimum efficiency and security of operation. UCC256302includes an algorithm for adaptive dead-time that  
makes its operation inherently robust compared with alternative parts.  
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Overview (continued)  
UCC256302 includes high and low-side drivers that can directly drive LLC power stage delivering up to 1-kW  
peak/500-W continuous power. This allows complete and fully featured power systems to be realized with  
minimum component count.  
An integrated high voltage JFET allows the power system to be regulating its output voltage within one second of  
the mains voltage appearing at the input of the PFC stage. UCC256302 provides start-up power for both the LLC  
and PFC stages. Once operating, the JFET is switched OFF to limit power dissipation in the package and reduce  
standby power consumption.  
At low output power levels UCC256302 automatically transitions into light-load burst mode. The LLC equivalent  
load current level during the burst on period is a programmable value. The space period between bursts is  
terminated by the secondary voltage regulator loop based on the FB pin voltage. During burst mode, the  
resonant capacitor voltage is monitored so that the first and last burst pulse widths are fully optimized for best  
efficiency. This method allows UCC256302 to achieve higher light-load efficiency and reduced no-load power  
compared with alternative parts.  
In addition, UCC256302 enables the opto-coupler to operate at a low power mode, which can save up to 20 mW  
at standby mode comparing with conventional solution.  
Additional protection features of UCC256302 include three-level over current protection, output over voltage  
protection, input voltage OVP and UVP, gate driver UVLO protection, and over temperature protection.  
The key features of UCC256302 can be summarized as follows:  
Integrated high voltage start up and high voltage gate driver  
Hybrid Hysteretic Control helps achieve best in class load and line transient response  
Optimized light load burst mode enables 150-mW standby power design  
Improved capacitive region operation prevention scheme  
Adaptive dead time  
Wide operating frequency range (35 kHz ~ 1 MHz)  
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6.2 Functional Block Diagram  
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6.3 Feature Description  
6.3.1 Hybrid Hysteretic Control  
UCC256302 uses a novel control scheme – Hybrid Hysteretic Control (HHC) - to achieve best in class line and  
load transient performance. The control method makes the compensator very easy to design. The control  
method also makes light load management easier and more efficient. Improved line transient enables lower bulk  
capacitor/output capacitor value and saves system cost.  
HHC is a control method which combines traditional frequency control and charge control – It is charge control  
with added frequency compensation ramp. Comparing with traditional frequency control, it changes the power  
stage transfer function from a 2nd order system to a 1st order system, so that it is very easy to compensate. The  
control effort is directly related to input current, so the line and load transients are best in class. Comparing with  
charge control, the hybrid hysteretic control avoids unstable condition by adding in a frequency compensation  
ramp. The frequency compensation makes the system always stable, and makes the output impedance lower as  
well. Lower output impedance makes the transient performance better than charge control.  
In summary, the problems solved by HHC are:  
Help LLC converters achieve best in class load transient and line transient  
Changes the small-signal transfer function to a 1st order system which is very easy to compensate, and can  
achieve very high bandwidth  
Inherently stable via frequency compensation  
Makes burst mode control high efficiency optimization much easier  
Figure 26 shows the HHC implementation in UCC25630: a capacitor divider (C1 and C2) and two well matched  
controlled current source.  
IIN  
+
Date_I  
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Date_[  
/r  
-
5ead  
time  
control  
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Date_[  
Date_I  
Q S  
Lcomp  
Lcomp  
+
-
Date_I  
Date_[  
ëÇ[  
R
Q
ë/hꢀꢁ  
/1  
+
-
-
ë/ꢀ  
Q S  
+
ë/w  
/2  
+
-
R
Q
ëÇI  
ë/w  
ë/hꢀꢁ = ëÇI - ëÇ[  
(ëÇI + ëÇ[)ꢂ2 = ë/ꢀ  
Çurn ꢃigꢃ side off ꢄꢃen ë/w > ëÇI;  
Çurn loꢄ side off ꢄꢃen ë/w < ëÇ[;  
ë/w =  
+
Iigꢃ side and loꢄ side are turned on  
ꢅy dead time control circuits  
Figure 26. UCC256302 HHC Implementation  
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Feature Description (continued)  
The resonant capacitor voltage is divided down by the capacitor divider formed by C1 and C2. The current  
sources are controlled by the gate drive signals. When high side switch is on, turn on the upper current source to  
inject a constant current into the capacitor divider; when low side switch is on, turn on the lower current source to  
pull the same amount of constant current outside of the capacitor divider. The two current sources add a  
triangular compensation ramp to the VCR node. The current sources are supplied by a reference voltage Vref. This  
voltage needs to be equal to or larger than twice of the common mode voltage VCM. The divided resonant  
capacitor voltage and the compensation ramp voltage are then added together to get VCR node voltage. If the  
frequency compensation ramp dominates, the VCR node voltage will look like a triangular waveform, and the  
control will be similar to direct frequency control. If the resonant capacitor voltage dominates, the shape of the  
VCR node voltage will look like the actual resonant capacitor voltage, and the control will be similar to charge  
control. This is why the control method is called “hybrid” and the compensation ramp is called frequency  
compensation.  
This set up has an inherent negative feedback to keep the high side and low side on time balanced, and also  
keep the common mode voltage at VCR node at VCM  
.
There are two input signals needed for the new control scheme: VCR and VCOMP. VCR is the sum of the scaled  
down version of the resonant capacitor voltage and the frequency compensation ramp. VCOMP is the voltage loop  
compensator output. The waveform below shows how the high-side and low-side switches are controlled based  
on VCR and VCOMP. The common mode voltage of VCR is VCM.  
High-Side Gate  
T/2  
Low-Side Gate  
ûVCR‘  
VTH  
ûVCR  
VTL  
t3  
t1  
t4  
t2  
Figure 27. HHC Gate On/Off Control Principle  
Based on VCOMP and VCM (3 V), two thresholds: Vthh and Vthl are created.  
Vcomp  
Vthh = VCM +  
2
(1)  
(2)  
Vcomp  
Vthh = VCM -  
2
The VCR voltage is compared with the two thresholds. When VCR > Vthh, turn off high side switch; when VCR <  
Vthl, turn off low side switch. HO and LO turn on edges are controlled by adaptive dead time circuit.  
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Feature Description (continued)  
6.3.2 Regulated 12-V Supply  
RVCC pin is the regulated 12-V supply which can supply up to 100-mA current. The regulated rail is used to  
supply the PFC, and LLC gate driver. RVCC has under voltage lock out (UVLO) function. If during normal  
operation, RVCC voltage is less than RVCCUVLO threshold. It is treated as a fauDevice Functional Modeslt and  
the system will enter FAULT state. Details about the FAULT handling will be discussed in the section.  
6.3.3 Feedback Chain  
Control of output voltage is provided by a voltage regulator circuit located on the secondary side of the isolation  
barrier. The demand signal from the secondary regulator circuit is transferred across the isolation barrier using  
an opto-coupler and is fed into the FB pin on UCC25630. This section discusses about the whole feedback  
chain.  
The feedback chain has the following functions:  
Optocoupler feedback signal input and bias  
System external shut down  
Soft start function selection by a pick lower block  
Burst mode selection by a pick higher block  
Convert single ended feedback demand to two thresholds Vthh and Vthl; and VCR comparison with the  
thresholds and the common mode voltage VCM  
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LC.  
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Ceedback  
hpto-  
coupler  
C.replica  
ꢀick  
loꢁer  
value  
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ꢀick  
ꢂigꢂer  
value  
ëcr[oꢁerÇꢂanëtꢂl  
+
-
wC.  
-
-
ëcm  
+
+
{{replica  
ëcrIigꢂerÇꢂanëtꢂꢂ  
ëcrIigꢂerÇꢂanëcm  
.ꢃÇreplica  
-
ꢃÜó  
ꢃÜó  
{{9nd  
{{9nd  
ë/w  
+
-
!ë55  
ë/ꢃ  
{{  
.ꢃÇ  
Figure 28. Feedback Chain Block Diagram  
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Feature Description (continued)  
The timing diagram below shows the FB chain waveforms. The sequence is normal soft start followed by a ZCS  
event, and load step into burst mode, and then come out of burst mode.  
C.replica  
{{replica  
.ꢀÇreplica  
ëthh  
ëcm  
ëthl  
{{9n  
ù/{  
C.[essÇhan{{  
{{9nd  
/harge{{  
C.[essÇhan.ꢀÇ  
Figure 29. Feedback Chain Timing Diagram  
6.3.4 Optocoupler Feedback Signal Input and Bias  
The secondary regulator circuit and optocoupler feedback circuit all add directly to the no load power consumed  
by the system. To achieve very low no load power it is necessary to drive the optocoupler in a low current mode.  
As shown in Figure 29, a constant current source IFB is generated out of VCC voltage and connected to FB pin.  
A resistor RFB is also connected to this current source with a PMOS in series. During normal operation, the  
PMOS is always on. The PMOS limits the maximum voltage on the FBreplica.  
IFB = Iopto +IRFB  
(3)  
From this equation, when Iopto increases, IRFB will decrease, making FBreplica decrease. In this way, the control  
effort is inverted. This circuit can also limit the optocoupler maximum current to be IFB. A conventional way to  
bias the optocoupler is using a pull up resistor on the collector of the optocoupler output. To reduce the power  
consumption, the pull up resistor needs to be big, which will limit the loop bandwidth. For the bias current method  
used in UCC25630, the optocoupler current is limited and there is no loop bandwidth issue.  
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Feature Description (continued)  
6.3.5 System External Shut Down  
This function provides a way to shut down the system by an external signal. When the FBreplica is less than the  
burst mode threshold, stop LLC switching. When FBLessThanBMT is true for more than 200 ms, go to JFET  
OFF state and try to re-start. Before LLC starts switching, the system has to make sure that FBLessThanBMT is  
not true. If FBreplica is constantly held low by an external signal, the system will not start again.  
This function can be used for system on/off control or any other fault shut down which isn’t included in  
UCC25630. To implement this function, an external biased optocoupler is needed. The schematic below is an  
example of such implementation.  
Figure 30. External Disable Example Circuit  
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Feature Description (continued)  
6.3.6 Pick Lower Block and Soft Start Multiplexer  
This part of the circuit consists of 3 elements:  
A pick lower block  
A MUX which selects AVDD or SS signal as the second input to the pick lower block  
A SS control block which handles the charge and discharge of the SS capacitor in cause of a ZCS fault  
The pick lower block has two inputs. The first input is FBreplica. The second input is selected between AVDD  
and SS pin voltage. The other output of the block is the lower of the two inputs.  
The MUX selects between SS and AVDD. The selection is based on SSEnd (soft start end) signal, which is an  
output of the SS Ctrl block. SSEnd is high when SS is higher than FBreplica, and soft start process has been  
initiated by the state machine, and there is no ZCS condition. Switching to AVDD after soft start has ended helps  
make sure that during non-soft start or non-ZCS fault condition, FBreplica signal is always sent through the pick  
lower block. It also releases the SS pin to do the other function – light load threshold programming.  
The SS control block handles the charge and discharge of the SS capacitor in cause of a ZCS fault. It reset the  
SSEnd signal when ZCS happens, so the effect of pulling down on SS pin to increase the switching frequency  
can pass through the pick lower block. The relationship of the SS control block inputs and outputs is the  
following:  
SSEnd = SSEn & !ZCS & (!FBLessThanSS)  
(
)
(4)  
(5)  
ChargeSS = SSEn & !SSEnd & !ZCS  
(
)
(
)
6.3.7 Pick Higher Block and Burst Mode Multiplexer  
The output of the pick lower block goes into a pick higher block, which selects the higher of the pick lower block  
output and the burst mode threshold setting.  
The burst mode multiplexer selects between BMT and ground. During soft start, the multiplexer selects ground.  
The startup process is open loop and controlled by the soft start ramp. Burst mode is not enabled during soft  
start phase.  
After soft start, the higher of the two inputs are sent to the differential amplifier. The other output is a comparator  
output FBLessThanBMT. It is sent to the waveform generator state machine to control burst mode and system  
external shut down.  
6.3.8 VCR Comparators  
The output of the pick higher block is sent to a differential amplifier to convert the signal to two thresholds  
symmetrical to Vcm. The difference between the two thresholds Vthh and Vthl equals the input amplitude. The  
VCR pin voltage is then compared with Vthh, Vthl, and Vcm. The results are sent to the waveform generator.  
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Feature Description (continued)  
6.3.9 Resonant Capacitor Voltage Sensing  
The resonant capacitor voltage sense pin senses the resonant capacitor voltage through a capacitor divider.  
Inside the device, two well matched, controlled current sources are connected to VCR pin to generate the  
frequency compensation ramp. The on/off control signals in of the two current sources come from the waveform  
generator block.  
During waveform generator IDLE state or before startup, short VCR node to Vcm. This action will help reduce the  
startup peak current, and help VCR voltage to settle down quickly during burst mode.  
!ë55  
I{wamphn  
VCR  
7
ë/w  
[{wamphn  
Figure 31. VCR Block Diagram  
The ramp current on/off sequence is shown in Figure 32. The ramp current is on all the time. It changes direction  
at the falling edge of high side on or low side on signal.  
HSON  
LSON  
2 mA  
Compensation ramp  
0
current  
-2 mA  
Figure 32. VCR Compensation Ramp Current On/Off  
On VCR pin, a capacitor divider is used to mix the resonant capacitor waveform and the compensation ramp  
waveform. Adjusting the size of the external capacitors can change the contribution of charge control and direct  
frequency control. Assume the divided down version of the resonant capacitor voltage by the capacitor divider is  
Vdiv, the compensation ramp current resulted voltage on VCR pin is Vramp. If Vdiv is much larger than Vramp, the  
control method is similar to charge control, in which the control effort is proportional to the input charge of one  
switching cycle. If Vramp is much larger than Vdiv, the control method is similar to direct frequency control, in which  
the control effort is proportional to the switching frequency. The most optimal transient response can be achieved  
by adjusting the ratio between Vdiv and Vramp  
.
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Feature Description (continued)  
6.3.10 Resonant Current Sensing  
The ISNS pin is connected to the resonant capacitor using a high voltage capacitor. The capacitor CISNS and  
the resistor RISNS form a differentiator. The resonant capacitor voltage is differentiated to get the resonant  
current. The differentiated signal is AC and goes both positive and negative. In order to sense the zero crossing,  
the signal is level shifted using an op amp adder. IPolarity comparator detects the direction of the resonant  
current. The digital state machine implements a blanking time on IPolarity – IPolarity edges during the first 400ns  
of dead time are ignored.  
OCP2 and OCP3 thresholds are based on average input current. To get the average input current, the  
differentiator output is multiplexed with the high side switch on signal HSON: when HS is on, the MUX output is  
the differentiator output; when HS is off, the MUX output is 0. The MUX output is then averaged using a low pass  
filter. The output of the filter is the sensed average input current. Note that the MUX needs to pass through both  
positive and negative voltages. OCP2 and OCP3 faults have a 2ms and 50ms timer respectively. Only when the  
OCP2/OCP3 comparators output high for continuous 2ms or 50ms, the faults will be activated.  
OCP1 threshold is set on the peak resonant current. The voltage on the ISNS pin gets compared to OCP1  
threshold OCP1Th directly. The peak resonant current is checked once per cycle on the positive half cycle.  
OCP1 fault is only activated when there are 4 consecutive cycles of OCP1 event detected. During start up, the  
OCP1 comparator output of the first 15 cycles are ignored.  
ë/ꢂ  
+
+
-
Ltolariꢀy  
ë/ꢂ  
-
h/t1  
+
-
+
-
Ço  
wesonanꢀ  
/apaciꢀor  
h/t2  
h/t1Çꢁ  
h/t2Çꢁ  
L{b{  
/L{b{  
wL{b{  
6
!verage  
ꢂÜó  
+
h/t3  
-
h/t3Çꢁ  
I{hb  
Figure 33. ISNS Block Diagram  
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Feature Description (continued)  
6.3.11 Bulk Voltage Sensing  
The BLK pin is used to sense the LLC DC input voltage (bulk voltage) level. The comparators on BLK pin set the  
following thresholds:  
Bulk voltage level when LLC starts switching – BLKStartTh  
Bulk voltage level when LLC stops switching – BLKStopTh  
Bulk voltage level when bulk over voltage fault is generated – BLKOVRiseTh  
Bulk voltage level when bulk over voltage fault is cleared – BLKOVFallTh  
BLKOV signal is generated by one comparator with two thresholds selected by a MUX. This is to create  
necessary hysteresis for the BLKOV fault. The BLKSns signal is buffered and sent to burst mode threshold  
generation block to implement the adaptive burst mode threshold.  
Figure 34 shows the block diagram of the BLK pin.  
BLK  
4
+
.[Y{tart  
.[Y{tartÇꢀ  
.[Y{topÇꢀ  
-
+
-
.[Y{top  
+
-
.[Yhë  
.[YhëwiseÇꢀ  
.[YhëCallÇꢀ  
ꢁÜó  
.[Y{ns  
Figure 34. VCR Compensation Ramp Current On/Off  
PFC start  
switching  
AC plug in  
BLKOVRiseTh  
BLKOVFallTh  
BLKStartTh  
PFC output voltage  
RVCC  
LLC gate drive  
waveforms  
1s  
FAULT  
timer  
Figure 35. Timing Diagram of BLK Operations  
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Feature Description (continued)  
6.3.12 Output Voltage Sensing  
The output voltage is sensed through the bias winding (BW) voltage sense pin. The sensed output voltage is  
compared with a fixed threshold to generate output OVP fault. The block diagram of the bias winding voltage  
sense block is shown below.  
BW  
8
-
teak  
deꢁecꢁ  
{/I  
+
-
+
hët  
hëtÇꢀ  
Figure 36. Bias Winding Sensing Block Diagram  
The bias winding sense block consists of an inverting op amp to flip the BW signal. The flipped BW signal is then  
peak detected and sampled at low side turn off edge. The sampled voltage represents the output voltage during  
this cycle. The S/H output is them compared with OVP comparator. Shown below is the timing diagram of the  
BW sense block.  
.í pin  
Lnverting hp-!mp  
hutput  
ꢀeak 5etector hutput  
[{hb  
{ample ꢀosition  
Figure 37. Timing Diagram of BW Sense Block  
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Feature Description (continued)  
6.3.13 High Voltage Gate Driver  
The low-side gate driver output is LO. The gate driver is supplied by the 12-V RVCC rail.  
The high-side driver module consists of three physical device pins. HB and HS form the positive and negative  
rails, respectively, of the high-side driver, and HO connects to the gate of the upper half-bridge MOSFET.  
During periods when the lower half-bridge MOSFET is conducting, HS is shorted to GND via the conducting  
lower MOSFET. At this time power for the high side driver is obtained from RVCC via high voltage diode  
DBOOT, and capacitor CBOOT is charged to RVCC minis the forward drop on the diode.  
During periods when the upper half-bridge MOSFET is conducting, HS is connected the LLC input voltage rail. At  
this time the HV diode is reverse biased and the high side driver is powered by charge stored in CBOOT.  
The slew on HS pin is detected for adaptive dead time adjustment. The next gate is only turned on when the  
slew on HS pin is finished.  
Both the high-side and low side gate drivers have under voltage lock out (UVLO) protection. The low side gate  
driver UVLO is implemented on RVCC; the high side gate driver UVLO is implemented on (HB - HS) voltage.  
When operating at light load, UCC256302 enters burst mode. During the burst off period, the gate driver enters  
low power mode to reduce power consumption.  
The block diagram of the gate driver is shown in Figure 38.  
To RVCC  
Vbus  
!ctiveꢁ[ow  
ꢂower  
íaveDen9n  
íake Üp  
/ontrol  
HB  
HO  
HS  
14  
15  
16  
{lew5one_I  
{lew5one_[  
!daptive  
5ead Çime  
[evel  
{ꢀift  
I{hb  
Iigꢀ ëoltage  
Lsolation  
LO  
[{hb  
10  
Figure 38. Gate Driver Block Diagram  
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Feature Description (continued)  
6.3.14 Protections  
6.3.14.1 ZCS Region Prevention  
Capacitive region is an LLC operation region in which the voltage gain increases when the switching frequency  
increases. It is also called ZCS region. Capacitive mode operation should be avoided for two reasons:  
The feedback loop becomes positive feedback in capacitive region  
The MOSFET may be damaged because of body diode reverse recovery  
To make sure that capacitive region operation does not happen, we need to first rely on the slew done signal. If  
there is a slew done signal detected, it suggests that the opposite body diode must not be conducting and to turn  
on the next FET. If there is no slew detected, IPolarity signal is used. The next gate will be turned on at the next  
IPolarity flip event. The IPolarity flip indicates that the capacitive operation cycle has already passed. The  
resonant current reverses the direction and begins to discharge the switch node. When the capacitive operation  
cycle has passed, the system enters a high frequency oscillation stage, where the oscillation frequency is  
determined by the parasitic elements in the circuit. In this stage, the body diode is no longer conducting and it is  
allowed to turn on the next gate.  
However, in the high frequency oscillation stage, the resonant current may be so small that the IPolarity detection  
is missed. In this case, the next gate will be turned on by maximum dead time timer expiration.  
In addition to preventing the next gate from turning on when the opposite body diode is conducting, the switching  
frequency is forced to ramp up until there is a cycle with no capacitive region operation detected  
The capacitive region detection is done by checking the resonant current polarity at HSON or LSON falling edge.  
If the resonant current is positive at LSON falling edge, or negative at HSON falling edge, the ZCS signal in the  
waveform generator is turned high. The ZCS signal keeps high until there is a half cycle without capacitive region  
operation happens.  
The force ramping up of the switching frequency is done by pull the SS pin down by a resistor to ground. Details  
will be discussed in SS pin section.  
Below is the flow chart of capacitive region prevention algorithm:  
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Feature Description (continued)  
Start  
ZCS = 1, pull down  
SS pin  
Slew done detected brefore  
Ipolarity blanking expires?  
Yes  
Yes  
ZCS event detected at HSON or  
No  
LSON turn off edge?  
Yes  
Ipolarity flip detected?  
Turn on the next gate  
No  
ZCS = 0  
No  
Yes  
Maximum dead time expired?  
Figure 39. Gate Driver Block Diagram  
bexꢀ {wiꢀch  
Çurn ꢂn is  
5elayed  
I{  
[{  
ù/{  
5eꢀecꢀed  
ꢁesonanꢀ  
currenꢀ  
bo {lope Ünꢀil  
/urrenꢀ  
.ecomes  
trimary {ide  
{wiꢀch bode  
begaꢀive  
ë/ꢂꢃt ꢁamps 5own  
Ünꢀil bo ù/{  
Figure 40. Timing Diagram of a ZCS Event  
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Feature Description (continued)  
6.3.14.2 Over Current Protection (OCP)  
There are three levels of OCP:  
1. OCP1: peak current protection (highest threshold)  
1. Fault action: count OCP1 cycles and shut down power stage if counter exceeds preset value  
2. OCP2: average input current protection (high threshold)  
1. Fault action: if above threshold for 2 ms, shut down  
3. OCP3: average input current protection (low threshold)  
1. Fault action: if above threshold for 50 ms, shut down  
The circuit block diagram has been discussed in the Resonant Current Sensing section.  
6.3.14.3 Over Output Voltage Protection (VOUTOVP)  
This is the output over voltage protection. VOUTOVP threshold is set on the bias winding voltage sense. The  
VOUTOVP trip point can be set by configuring the voltage divider on BW pin.  
6.3.14.4 Over Input Voltage Protection (VINOVP)  
This is the input over voltage protection. The fault actions have been discussed in the BLK section. The trip point  
can be set by configuring the voltage divider on BLK pin.  
6.3.14.5 Under Input Voltage Protection (VINUVP)  
This is the input under voltage protection. The fault actions have been discussed in the BLK section. The trip  
point can be set by configuring the voltage divider on BLK pin.  
6.3.14.6 Boot UVLO  
This is the high side gate driver UVLO. When (HB – HS) voltage is less than the threshold, the high side gate  
output will be shut down.  
6.3.14.7 RVCC UVLO  
This is the regulated 12-V UVLO. When RVCC voltage is less than the threshold, both the high side gate output  
and the low-side gate output will be turned off.  
6.3.14.8 Over Temperature Protection (OTP)  
This is the device over temperature protection. When OTP fault is tripped, if the device is switching, the switching  
will stop. If the device is in HV start up stage and JFET is on, the JFET will be turned off. Details of the OTP fault  
handling will be discussed in the Device Functional Modes section.  
There are two digital state machines in the system:  
System States and Faults State Machine  
Waveform Generator Stage Machine  
The system states control state machine controls system operation states and faults. The waveform generator  
state machine controls the gate driver behavior.  
6.4 Device Functional Modes  
6.4.1 Burst Mode Control  
The efficiency of an LLC converter power stage drops rapidly with falling output power. To maintain reasonable  
light load efficiency it is necessary to operate the LLC converter in burst mode. In this mode the LLC converter  
operates at relatively high power for a short burst period and then all switching is stopped for a space period.  
During the Burst period excess charge is transferred to and stored in the output capacitor. During the Space  
period this stored charge is used to supply the load current. Providing an effective light-load scheme is a  
particular problem for an LLC controller that is located on the primary side of the isolation barrier. This is because  
the feedback demand signal (VCOMP) is mainly a function of input/output voltage ratio and only loosely related to  
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Device Functional Modes (continued)  
load current. The normal method of placing a couple of thresholds in the VCOMP voltage window to switch OFF  
and ON the LLC converter does not work effectively. Another issue with the conventional method is that when  
burst on, the switching pulses are determined by VCOMP, which is usually at initial burst on, and decays as the  
output voltage rises. The resulting inductor current will be big at first and then decays. This is not optimal  
because the big current at first may create mechanical vibration. The high switching frequency afterwards may  
cause two much switching loss.  
For an advanced burst mode, the following features are desired:  
The power delivered by each burst should be relatively constant for a certain load.  
The Burst power is set high enough to provide reasonable LLC converter efficiency and low enough to avoid  
acoustic noise and excessive output voltage ripple.  
When burst on, the average capacitor voltage should settle to VIN/2 as fast as possible for best efficiency.  
The switching frequency or burst power level of each burst pulse should be optimized for efficient operation.  
The burst pattern of each burst should be relatively constant.  
There should be no audible noise.  
Burst mode performance should be consistent across input voltage range.  
The HHC method makes the control of the burst mode very straight forward. The block diagram is a functionally  
accurate description of the burst mode control method in UCC25630.  
FB less than burst  
mode threshold  
tick  
higher  
value  
/ꢂꢀt  
/ꢂꢀt_new  
ꢀÜó  
{{9nd  
.ursꢁ mode  
ꢁhreshold  
Figure 41. Burst Mode Control Block Diagram  
The control effort is selected between the higher of the two signals: 1) the voltage loop compensator output  
(VCOMP) or 2) the Burst Mode Threshold level (BMT). When VCOMP goes below BMT, continue switching for a  
fixed number of switching cycles, then stop. Always switch while COMP is higher than BMT. If soft start isn’t  
done yet, send the COMP (controlled by soft start ramp). BMT is programmable and adaptively changed with  
input voltage. The last pulse of each burst on period is turned off when the resonant capacitor voltage equals  
VIN/2. In HHC method, this is approximately equivalent to VCR node voltage equals the common mode voltage  
VCM. This operation keeps the resonant capacitor voltage to about VIN/2 for each burst off period, thus enabling  
the burst pattern to settle as soon as possible during burst on period.  
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Device Functional Modes (continued)  
6.4.2 High Voltage Start-Up  
UCC256302 uses a self bias start up scheme, thus eliminating the need of a separate auxiliary flyback power  
stage. When AC is first plugged in, PFC and LLC are both off. HV pin JFET will be enabled and will start to  
deliver current from a source connected to the HV pin to the VCC capacitor. Once the VCC pin voltage exceeds  
its VCCStartSwitching threshold, the current source will be turned off and RVCC will be enabled to turn on the  
PFC. When PFC output voltage reaches a certain level, LLC is turned on. When LLC is operating and the output  
voltage is established, the bias winding will supply current for both the PFC and the LLC controller devices.  
6.4.3 Soft-Start and Burst-Mode Threshold  
The soft-start programming and burst mode threshold programming are multiplexed on one pin – LL/SS. In  
addition, when ZCS region operation happens, this pin is pulled down to ground through a resistor to increase  
the switching frequency.  
An internal constant current source charges the soft start capacitor to generate the soft-start command. Soft start  
period starts right after charge boot stage is done, and ends when FBreplica becomes lower than SS pin voltage.  
After soft start is done, the SS voltage is replaced by AVDD to send to the FB chain. The LL/SS pin is then used  
to generate the burst mode threshold. In UCC256302 we try to maintain the same burst mode power level over  
the input voltage range. This is done by adaptively changing the burst mode threshold with sensed BLK voltage.  
The programming resistors output provide two degrees of freedom, to set the burst mode threshold, as well as  
how the threshold changes with BLK voltage. When programmed correctly, the power stage will always enter  
burst mode at a certain output current level, making the system much easier to optimize.  
!ë55  
Ço wë//  
/harge{{  
LL/SS  
{{  
9
wdischarge  
ù/{  
.urst  
.ꢀÇ  
Çhreshold  
Den  
.[Y{ns  
Figure 42. LL/SS Block Diagram  
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Device Functional Modes (continued)  
6.4.4 System States and Faults State Machine  
Below is an overview of the system states sequence:  
The state transition diagram starts from the un-powered condition of UCC25630. As soon as the system is  
plugged in, HV pin JFET will be enabled and will start to deliver current from a source connected to the HV pin to  
the VCC capacitor. Once the VCC pin voltage exceeds its VCCStartSwitching threshold, system state will  
change to JFETOFF. When PFC output voltage reaches a certain level, LLC is turned on. Before LLC starts  
running, the LO pin is kept high to pull the HS node of the LLC bridge low, thus allowing the capacitor between  
HB and HS pins to be charged from VCC via the bootstrap diode. UCC256302 will remain in the  
CHARGE_BOOT state for a certain time to ensure the boot capacitor is fully charged. When LLC output voltage  
reaches a certain level, both PFC and LLC gets power from LLC transformer bias winding. When the load drops  
to below a certain level, LLC operates in burst mode  
Fault conditions encountered by UCC256302 will cause operation to stop, or paused for a certain period of time  
followed by an automatic re-start. It is to ensure that while a persistent fault condition is present, it is not possible  
for UCC256302 or the power converter temperature to continue to rise as a result of the repeated re-start  
attempts.  
Figure 43. Block Diagram of System States and Faults State Machine  
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Device Functional Modes (continued)  
Table 1 summarizes the inputs and outputs of Figure 43  
Table 1. System States and Faults State Machine Block Inputs and Outputs  
SIGNAL NAME  
I/O  
DESCRIPTION  
OVP  
OTP  
I
I
I
I
I
I
I
I
I
I
Output over voltage fault  
Over temperature fault  
Peak current fault  
OCP1  
OCP2  
Average current fault with 2ms timer  
Average current fault with 50ms timer  
Bulk voltage is above start threshold  
Bulk voltage is below stop threshold  
Bulk over voltage fault  
OCP3  
BLKStart  
BLKStop  
BLKOV  
RVCCUVLO  
VCCReStartJfet  
RVCC UVLO fault  
VCC is below restart threshold  
VCC is above start switching threshold (the threshold is different in self bias mode  
and external bias mode)  
VCCStartSwitching  
I
FBLessThanBMT  
WaveGenEn  
RVCCEn  
I
FBReplica voltage is less than burst mode threshold  
Waveform generator enable  
RVCC enable  
O
O
O
O
SSEn  
Soft start enable  
HVFetOn  
Turn on or off JFET  
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The state machine is shown in Figure 44 and the description of the states and state transition conditions are in  
the tables below.  
AC plug in  
22  
STARTUP  
1
21  
1
JFETON  
2
12  
20  
JFETOFF  
3
23  
15  
19  
11  
WAKEUP  
4
FAULT  
14  
18  
10  
9
CHARGE_BOOT  
5
17  
16  
STEADY_STATE_RUN  
6
7
13  
8
LIGHT_LOAD_RUN  
Figure 44. System States and Faults State Machine  
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Table 2. States in System States and Faults State Machine  
STATE  
OUTPUT STATUS  
DESCRIPTION  
WaveGenEn = 0  
RVCCEn = 0  
SSEn = 0  
This is the first state after power on reset (POR). In this state, the HV JEFT is on,  
and it’s working in a voltage clamp state where the VCC voltage is regulated to  
13V to allow internal circuits to load trim settings and start up.  
STARTUP  
JFETON  
HVFetOn = 1  
WaveGenEn = 0  
RVCCEn = 0  
SSEn = 0  
In this state, the JFET is on. HV start up current is regulated to IHVHigh.  
HVFetOn = 1  
WaveGenEn = 0  
RVCCEn = 1  
SSEn = 0  
When VCC is higher than VCCStartSwitching threshold, the JFET is turned off and  
system enters JFETOFF state. The regulated RVCC is turned on. PFC soft start  
begins.  
JFETOFF  
HVFetOn = 0  
WaveGenEn = 0  
RVCCEn = 1  
SSEn = 0  
When BLK voltage reaches BLKStart level, the system enters WAKEUP state and  
stay in WAKEUP state for 150us for the analog circuits to wake up.  
WAKEUP  
HVFetOn = 0  
WaveGenEn = 0  
RVCCEn = 1  
SSEn = 0  
In this state, the BOOT capacitor is charged by turning on the low side switch for a  
certain period of time.  
CHARGE_BOOT  
STEADY_STATE_RUN  
LIGHT_LOAD_RUN  
FAULT  
HVFetOn = 0  
WaveGenEn = 1  
RVCCEn = 1  
SSEn = 1  
In this state, the waveform generator is enabled. Soft start module is enabled. LLC  
starts to soft start. When soft start is done, the system enters normal operation.  
HVFetOn = 0  
WaveGenEn = 1  
RVCCEn = 1  
SSEn = 1  
If FBReplica is less than burst mode threshold during normal operation, the system  
enters LIGHT_LOAD_RUN mode. The FBLessThanBMT time is counted. If the  
time is longer than 200ms, it is treated as a fault, restart the system.  
HVFetOn = 0  
WaveGenEn = 0  
RVCCEn = 0  
SSEn = 0  
After any fault condition, the system enters FAULT state and waits for 1s before re-  
start. The 1s timer allows system to cool down and prevents frequent repetitive  
start up in case of a persistent fault.  
HVFetOn = 0  
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Table 3. System States and Faults State Machine State Transition Conditions  
STATE TRANSITION  
CONDITION  
DESCRIPTION  
1
System ready (trim load done)  
VCCStartSwitching = 1  
VCCReStartJfet = 0  
2
BLKStart = 1  
BLKStop = 0  
BLKOV = 0  
3
4
RVCCUVLO = 0  
BLKStart = 1  
BLKStop = 0  
BLKOV = 0  
RVCCUVLO = 0  
FBLessThanBMT = 0  
5
6
Charge boot done  
FBLessThanBMT = 1  
FBLessThanBMT = 0  
VCCReStartJfet = 1  
VCCReStartJfet = 1  
VCCReStartJfet = 1  
VCCReStartJfet = 1  
VCCReStartJfet = 1  
FBLessThanBMT time out  
BLKOV = 1  
7
8
9
10  
11  
12  
13  
14  
15  
BLKOV = 1  
OTP = 1 or BLKOV = 1 or  
16  
17  
BLKStop = 1 or OVP or OCP1 or OCP2 time out or  
OCP3 time out or RVCCUVLO = 1  
OTP = 1 or BLKOV = 1 or  
BLKStop = 1 or OVP or OCP1 or OCP2 time out or  
OCP3 time out or RVCCUVLO = 1  
18  
19  
20  
21  
22  
23  
OTP = 1  
OTP = 1  
OTP = 1  
OTP = 1  
OTP = 1  
1s pause time out  
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Figure 45 only shows the most commonly used state transition (assuming no faults during start up states so all  
the states are captured in the timing diagram). Many different ways of state transitions may happen according to  
the state machine, but are not captured in this section.  
In Figure 45, a normal start up procedure is shown. The system enters normal operation and then a fault (OCP,  
OVP, or OTP) happens.  
NOTE  
OCP1 and OVP are fast faults and are first processed in the waveform generator state  
machine.  
The system is configured to be restart after 1s pause time.  
AC plug in  
VCCStartSwitching  
VCC  
VCCReStartJfet  
VCCShort  
PFC output voltage  
RVCC  
LLC output voltage  
LLC gate drive  
waveforms  
STEADY_STATE_RUN  
STARTUP  
JFETON  
JFETOFF  
STEADY_STATE_RUN  
FAULT JFETON JFETOFF  
System state  
WAKEUP CHARGE_BOOT  
WAKEUP CHARGE_BOOT  
Figure 45. Timing Diagram of System States and Faults  
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6.4.5 Waveform Generator State Machine  
The waveform generator module consists of a state machine that implements hybrid hysteretic control, adaptive  
dead time, and ZCS protection. Each cycle of LLC operation is broken down into 4 separate periods: HSON,  
DTHL, LSON, and DTLH. In addition, there is an IDLE state and a WAKEUP state.  
The initial state of this state machine is IDLE. In IDLE state, the system is operating in a low power mode. When  
WaveGenEn command is received, the state machine enters WAKEUP state to turn on various circuit blocks.  
Once the WAKEUP timer is expired, the system enters LSON (low side on) state. LSON state is followed by  
DTLH (dead time high to low) state, which is the dead time state. After DTLH state, the high side turns on and  
system enters HSON. HSON state is followed by DTHL (dead time low to high) state. After DTHL, the system  
goes back to LSON state again.  
There are minimum and maximum timers in each of the states. The state transition conditions and descriptions  
are discussed in detail below.  
Lꢀolarity  
{lew5one_I  
ù/{  
I{hb  
{lew5one_[  
[{hb  
íaveform generator  
ëcrIigꢂerÇꢂanëtꢂꢂ  
I{ꢁamphn  
ëcr[owerÇꢂanëtꢂl  
[{ꢁamphn  
ëcrIigꢂÇꢂanëcm  
íaveDen9n  
Figure 46. Waveform Generator State Machine Block Diagram  
Table 4 summarizes the inputs and outputs of the Waveform Generator State Machine Block Diagram  
NOTE  
OVP and OCP1 faults are not listed here. But they are processed in the wave gen state  
machine before handled to system states and faults state machine.  
Table 4. Waveform Generator State Machine Inputs and Outputs  
SIGNAL NAME  
IPolarity  
I/O  
DESCRIPTION  
I
Polarity of the resonant current (Note: this signal has a 1us blanking time during  
dead time. IPolarity signal listed here is after blanking. See ISNS section for  
details.)  
SlewDone_H  
SlewDone_L  
VcrHigherThanVthh  
VcrLowerThanVthl  
VcrHighThanVcm  
WaveGenEn  
ZCS  
I
I
Primary side switch node completes slewing from low to high  
Primary side switch node completes slewing from high to low  
VCR voltage is higher than the high threshold Vthh  
VCR voltage is lower than the low threshold Vthl  
VCR voltage is high than the common mode voltage Vcm  
Waveform generator enable  
I
I
I
I
O
O
O
O
O
Zero current switching is detected  
HSON  
High side gate driver on  
LSON  
Low side gate driver on  
HSRampOn  
LSRampOn  
High side compensation current ramp on  
Low side compensation current ramp on  
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The state machine is shown in Figure 47 and the description of the states and state transition conditions are in  
Table 5.  
LSON  
2
6
3
8
WakeUp  
7
1
DTHL  
11  
9
IDLE  
DTLH  
Power on reset  
10  
5
4
HSON  
Figure 47. Waveform Generator State Machine  
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Table 5. States in Waveform Generator State Machine  
STATE  
OUTPUT STATUS  
DESCRIPTION  
HSON = 0  
LSON = 0  
HSRampOn = 0  
LSRampOn = 0  
ZCS = 0  
Both high side and low side are off in this state. Various circuits are operating in  
low power mode. This is the first state after POR. During burst off period, the  
system is in IDLE state as well. Upon entering IDLE state, load burst cycle counter,  
switching cycle counter, OCP1 counter, and OVP counter. Load startup cycle  
counter if WaveGenEn_Rising = 1  
IDLE  
WakeUp  
HSON = 0  
In this state, internal circuits wake up from low power mode.  
LSON = 0  
HSRampOn = 0  
LSRampOn = 0  
ZCS = 0  
LSON  
DTLH  
HSON  
DTHL  
HSON = 0  
LSON = 1  
HSRampOn = 0  
LSRampOn = 1  
ZCS = 0 or 1  
In this state, the low side gate turns on; the low side ramp current source turns on.  
ZCS may be 0 or 1 depends on the detected result. More details will be described  
in ZCS section. Enable low side on timer.  
HSON = 0  
LSON = 0  
HSRampOn = 1  
LSRampOn = 0  
ZCS = 0 or 1  
Dead time from low side on to high side on. Low side ramp current source turns  
off. High side ramp current source turns on. Enable dead time timer.  
HSON = 1  
LSON = 0  
HSRampOn = 1  
LSRampOn = 0  
ZCS = 0 or 1  
In this state, the high side gate turns on; the high side ramp current source turns  
on. ZCS may be 0 or 1 depends on the detected result. More details will be  
described in ZCS section. Enable high side on timer.  
HSON = 0  
LSON = 0  
Dead time from high side on to low side on. High side ramp current source turns  
off. Low side ramp current source turns on. Enable dead time timer.  
HSRampOn = 0  
LSRampOn = 1  
ZCS = 0 or 1  
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Table 6. Waveform Generator State Machine State Transition Conditions  
STATE TRANSITION  
DESCRIPTION  
CONDITION  
1
2
3
4
WaveGenEn = 1 and FBLessThanBMT = 0 and minimum IDLE time expired  
Wake up time expired  
(VcrLowerThanVthl = 1 or LSON max timer expired) and LSON min timer expired  
StartUpCounterExpired = 0 and DTStartUpTimerExpired = 1  
DTMaxTimerExpired = 1  
SlewDone_H = 1  
SlewDone_H = 1 and MeasuredDTExpired = 1; (Note: this condition and the condition above is  
selectable using a trim bit, depending on whether dead time measure and match feature is wanted)  
IPolarityFallingEdgeDetected = 1  
5
6
(VcrHigherThanVthh = 1 or HSON max timer expired) and HSON min timer expired  
StartUpCounterExpired = 0 and DTStartUpTimerExpired = 1  
DTMaxTimerExpired = 1  
SlewDone_L = 1  
IPolarityFallingEdgeDetected = 1  
7
8
WaveGenEn = 0  
WaveGenEn = 0  
(VcrLowerThanVthl = 1 or LSON max timer expired) and LSON min timer expired and (OCP1 counter  
expire or OVP counter expire)  
9
WaveGenEn = 0  
10  
WaveGenEn = 0  
BurstModeCountExpire = 1 and VcrHigherThanVcm = 1 and FBLessThanBMT = 1 and HSON min time  
expired  
11  
WaveGenEn = 0  
Table 7. Waveform Generator State Machine Internal Counters and Timers  
INTERNAL VARIABLE  
DESCRIPTION  
Switching cycle counter  
OVP counter  
This counter counts the switching cycle  
Bias Winding Overvoltage counter. The counter decrements every time a Bias Winding Overvoltage  
occurs  
Startup counter  
Startup Counter. Counter gets set to 15 when wave generator enable toggles from low to high, and then  
decrements every switching cycle. When the count hits 0, the dead time state is no longer permitted to  
be exited via the startup dead time expiration.  
Burst cycle counter  
OCP1 counter  
Burst counter. Counter gets set to 15 and then decrements every switching cycle until it hits ‘0’. If  
FBLessThanBMT = 1 when the counter is ‘0’, the switcher will stop until FBLessThanBMT = 0.  
OCP1 counter. Counter gets set to 4 and then decrements every switching cycle when OCP1 occurs,  
until it hits ‘0’  
Wakeup timer  
Wakeup state timer  
DT max timer  
Maximum dead time timer  
Startup dead time max timer  
Gate on min timer  
Gate on max timer  
Dead time max clamp for the first few start up cycles before the startup counter expires  
Minimum gate on time timer  
Maximum gate on time timer  
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7 Application and Implementation  
NOTE  
Information in the following applications sections is not part of the TI component  
specification, and TI does not warrant its accuracy or completeness. TI’s customers are  
responsible for determining suitability of components for their purposes. Customers should  
validate and test their design implementation to confirm system functionality.  
7.1 Application Information  
UCC256302 can be used in a wide range of applications in which LLC topology is implemented. In order to make  
the part easier to use, TI has prepared a list of materials to demonstrate the features of the device:  
Full featured EVM hardware  
A excel design calculator  
Simulation models  
Application notes on Hybrid Hysteretic Control theory  
In the following sections, a typical design example is presented.  
7.2 Typical Application  
Shown below is a typical half bridge LLC application using UCC256302 as the controller.  
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Typical Application (continued)  
7.2.1 Design Requirements  
The design specifications are summarized in Table 8.  
Table 8. System Design Specifications  
PARAMETER  
INPUT CHARACTERISTICS  
DC Voltage range  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
340  
390  
410  
VDC  
VAC  
Hz  
AC Voltage range  
85  
47  
264  
63  
AC Voltage frequency  
Input DC UVLO On  
320  
250  
VDC  
VDC  
A
Input DC UVLO Off  
Input DC current  
Input = 340 VDC, full load = 10 A  
Input = 390 VDC, full load = 10 A  
Input = 410 VDC, full load = 10 A  
0.383  
0.331  
0.315  
Input DC current  
A
Input DC current  
A
OUTPUT CHARACTERISTICS  
Output voltage, VOUT  
Output load current, IOUT  
Output voltage ripple  
SYSTEMS CHARACTERISTICS  
Switching frequency  
Peak efficiency  
No load to full load  
12  
VDC  
A
340 VDC to 410 VDC  
390 VDC and full load = 10 A  
10  
130  
mVpp  
53  
160  
kHz  
ºC  
390 VDC, load = A  
Natural convection  
92.9  
25  
Operating temperature  
7.2.2 Detailed Design Procedure  
7.2.2.1 Custom Design With WEBENCH® Tools  
Click here to create a custom design using the UCC256302 device with the WEBENCH® Power Designer.  
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.  
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.  
3. Compare the generated design with other possible solutions from Texas Instruments.  
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time  
pricing and component availability.  
In most cases, these actions are available:  
Run electrical simulations to see important waveforms and circuit performance  
Run thermal simulations to understand board thermal performance  
Export customized schematic and layout into popular CAD formats  
Print PDF reports for the design, and share the design with colleagues  
Get more information about WEBENCH tools at www.ti.com/WEBENCH.  
7.2.2.2 LLC Power Stage Requirements  
Start the design by deciding the LLC power stage component values. The LLC power stage design procedure  
outlined here follows the one given in the TI application note “Designing an LLC Resonant Half-Bridge Power  
Converters”. The application note contains a full explanation of the origin of each of the equations used. The  
equations given below are based on the First Harmonic Approximation (FHA) method commonly used to analyze  
the LLC topology. This method gives a good starting point for any design, but a final design requires an iterative  
approach combining the FHA results, circuit simulation, and hardware testing. An alternative design approach is  
given in TI application note SLUA733, LLC Design for UCC29950.  
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7.2.2.3 LLC Gain Range  
First, determine the transformer turns ratio by the nominal input and output voltages.  
V
/ 2  
IN nom  
390 / 2  
12  
(
)
n =  
=
= 16.25 16  
VOUT nom  
(
)
(6)  
Then determine the LLC gain range Mg(min) and Mg(max). Assume there is a 0.5-V drop in the rectifier diodes (Vf)  
and a further 0.5-V drop due to other losses (Vloss).  
VOUT min +V  
f
12 + 0.5  
410 / 2  
(
)
Mg min = n  
= 16  
= 0.976  
(
)
V
/ 2  
IN max  
(
)
(7)  
(8)  
VOUT max +V +V  
f
loss  
12 + 0.5 + 0.5  
(
)
Mg max = n  
= 16  
= 1.224  
(
)
V
/ 2  
340 / 2  
IN min  
(
)
7.2.2.4 Select Ln and Qe  
Ln is the ratio between the magnetizing inductance and the resonant inductance.  
Lm  
Ln =  
Lr  
(9)  
Qe is the quality factor of the resonant tank.  
Lr / Cr  
Qe =  
Re  
(10)  
In this equation, Re is the equivalent load resistance.  
Selecting Ln and Qe values should result in an LLC gain curve, as shown below, that intersects with Mg(min) and  
Mg(max) traces. The peak gain of the resulting curve should be larger than Mg(max). Details of how to select Ln and  
Qe are not discussed here. They are available in the Application Note, UCC25630x Practical Design Guidelines  
and UCC256302 Design Calculator.  
In this case, the selected Ln and Qe values are:  
Ln = 13.5  
(11)  
(12)  
Qe = 0.15  
7.2.2.5 Determine Equivalent Load Resistance  
Determine the equivalent load resistance by Equation 13.  
8 ìn2  
Œ2  
8 ì162 12  
VOUT nom  
(
)
Re =  
ì
=
ì
= 249W  
Œ2  
IOUT nom  
10  
(
)
(13)  
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7.2.2.6 Determine Component Parameters for LLC Resonant Circuit  
Before determining the resonant tank component parameters, a nominal switching frequency (resonant  
frequency) should be selected. In this design, 100 kHz is selected as the resonant frequency.  
f0 = 100kHz  
(14)  
The resonant tank parameters can be calculated as the following:  
1
1
Cr =  
=
= 42.6  
2Œ ìQe ìf0 ìRe 2Œ ì0.15ì100kHz ì 249W  
(15)  
1
1
Lr =  
=
= 59.5mH  
2Œ ìf 2 Cr  
2Œ ì100kHz 2 ì 42.6nF  
(
)
(
)
0
(16)  
(17)  
Lm = Ln ìLr = 13.5ì59.5 mH = 803mH  
After the preliminary parameters are selected, find the closest actual component value that is available, re-check  
the gain curve with the selected parameters, and then run time domain simulation to verify the circuit operation.  
The following resonant tank parameters are:  
Cr = 44nF  
(18)  
(19)  
(20)  
Lr = 61.5 mH  
Lm = 830 mH  
Based on the final resonant tank parameters, the resonant frequency can be calculated:  
1
1
f0 =  
=
= 96.8kHz  
2Œ LrCr  
2Œ 44nF ì 61.5 mH  
(21)  
Based on the new LLC gain curve, the normalized switching frequency at maximum and minimum gain are given  
by:  
fn Mgmax = 0.52  
(
)
(22)  
(23)  
fn Mgmin = 1.15  
(
)
The maximum and minimum switching frequencies are:  
fSW Mgmax =50.3kHz  
(
)
(24)  
(25)  
fSW Mgmin =111.3kHz  
(
)
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7.2.2.7 LLC Primary-Side Currents  
The primary-side currents are calculated for component selection purpose. The currents are calculated based on  
a 110% overload condition.  
The primary side RMS load current is given by:  
Io  
n
Œ
Œ
1.1ì10A  
Ioe  
=
ì
=
ì
= 0.764A  
16  
2 2  
2 2  
(26)  
The RMS magnetizing current at minimum switching frequency is given by:  
nVOUT  
2 2  
2 2  
16 ì12  
2Œ ì50.3kHz ì830mH  
Im  
=
ì
=
ì
= 0.659 A  
Œ
&Lm  
Œ
(27)  
(28)  
The total current in resonant tank is given by:  
2
Ir = Im2 + Io2e  
=
0.764A 2 + 0.659A = 1.009A  
(
)
(
)
7.2.2.8 LLC Secondary-Side Currents  
The total secondary side RMS load current is the current referred from the primary side current (Ioe) to the  
secondary side.  
Ioes = n ìIoe = 16ì0.764A = 12.218A  
(29)  
In this design, the transformer’s secondary side has a center-tapped configuration. The current of each  
secondary transformer winding is calculated by:  
2 ìIoes  
2
2 ì12.218A  
Iws  
=
=
= 8.639A  
2
(30)  
The corresponding half-wave average current is:  
2 ìIoes  
2
2 ì12.218A  
Isav  
=
=
= 5.503A  
Œ
(31)  
7.2.2.9 LLC Transformer  
A bias winding is needed in order to utilize the HV self start up function. It is recommended to design the bias  
winding so that the VCC voltage is greater than 13 V.  
The transformer can be built or purchased according to these specifications:  
Turns ratio: Primary : Secondary : Bias = 32 : 2 : 3  
Primary terminal voltage: 450Vac  
Primary magnetizing inductance: LM = 830 µH  
Primary side winding rated current: Ir = 1.009 A  
Secondary terminal voltage: 36Vac  
Secondary winding rated current: Iws = 8.639 A  
Minimum switching frequency: 50.3 kHz  
Maximum switching frequency: 111.3 kHz  
Insulation between primary and secondary sides: IEC60950 reinforced insulation  
The minimum operating frequency during normal operation is that calculated above but during shutdown the LLC  
can operate at right above ZCS boundary condition, which is a lower frequency. The magnetic components in the  
resonant circuit, the transformer and resonant inductor, should be rated to operate at this lower frequency.  
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7.2.2.10 LLC Resonant Inductor  
The AC voltage across the resonant inductor is given by its impedance times the current:  
VL = &LRIR = 2Œ ì50.3 ì103 ì 61.5ì10-6 ì1.009 = 19.607V  
R
(32)  
The inductor can be built or purchased according to the following specifications:  
Inductance: Lr = 61.5 µH  
Rated current: Ir = 1.009 A  
Terminal AC voltage:  
Frequency range: 50.3 kHz to 111.3 kHz  
The minimum operating frequency during normal operation is that calculated above but during shutdown the LLC  
can operate at right above ZCS boundary condition, which is a lower frequency. The magnetic components in the  
resonant circuit, the transformer and resonant inductor, should be rated to operate at this lower frequency.  
7.2.2.11 LLC Resonant Capacitor  
This capacitor carries the full-primary current at a high frequency. A low dissipation factor part is needed to  
prevent overheating in the part.  
The AC voltage across the resonant capacitor is given by its impedance times the current.  
Ir  
1.009  
VCR  
=
=
= 72.5V  
2Œ ì50.3 ì103 ì 44 ì10-9  
&Cr  
(33)  
(34)  
2
2
V
IN max  
410  
2
(
)
VCR rms  
=
+VC2R  
=
+ 72.52 = 217.4V  
«
÷
÷
«
÷
(
)
2
Peak voltage:  
V
IN max  
410  
2
(
)
VCR peak  
=
+ 2VCR  
=
+ 2 ì72.5 = 307.5V  
- 2 ì72.5 = 102.5V  
(
)
2
(35)  
Valley voltage:  
V
IN max  
(
2
410  
2
)
VCR valley  
=
- 2VCR  
=
(
)
(36)  
(37)  
Rated current:  
Ir = 1.009 A  
7.2.2.12 LLC Primary-Side MOSFETs  
Each MOSFET sees the input voltage as its maximum applied voltage. Choose the MOSFET voltage rating to be  
1.5 times of the maximum bulk voltage:  
VQLLC peak = 1.5 ìV  
= 615V  
IN max  
(
(
)
)
(38)  
Choose the MOSFET current rating to be 1.1 times of the maximum primary side RMS current:  
IQLLC = 1.1ìIr = 1.109A  
(39)  
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7.2.2.13 Design Considerations for Adaptive Dead-Time  
After the resonant tank is designed and the primary side MOSFET is selected, the ZVS operation of the  
converter needs to be double checked. ZVS can only be achieved when there is enough current left in the  
resonant inductor at the gate turn off edge to discharge the switch node. UCC256302 implements adaptive dead-  
time based on the slewing of the switch node. The slew detection circuit has a detection range of 1V/ns to 50  
V/ns.  
To check the ZVS operation, a series of time domain simulations are conducted, and the resonant current at the  
gate turn off edges are captured. An example plot is shown below:  
2
Input Voltage (V)  
350  
360  
370  
380  
390  
400  
1.75  
1.5  
1.25  
1
0.75  
0
2
4
6
8
10  
12  
D001  
Load Current (A)  
Figure 48. Adaptive Dead-Time  
The figure above assumes the maximum switching frequency occurs at 5% load, and system starts to burst at  
5% load.  
From this plot, the minimum resonant current left in the tank is Imin = 0.8 A in the interested operation range. In  
order to calculate the slew rate, the primary side switch node parasitic capacitance must be known. This value  
can be estimated from the MOSFET datasheet. In this case, Cswitchnode = 400 pF. The minimum slew rate is given  
by:  
IMIN  
0.8 A  
=
= 2V / ns  
Cswitchnode 400 pF  
(40)  
This is larger than 1 V/ns minimum detectable slew rate.  
7.2.2.14 LLC Rectifier Diodes  
The voltage rating of the output diodes is given by:  
V
IN max  
410  
16  
(
)
VDB = 1.2ì  
= 1.2ì  
= 30.75V  
n
(41)  
(42)  
The current rating of the output diodes is given by:  
2 ìIoes  
2 ì12.218  
ISAV  
=
=
= 5.5 A  
Œ
Œ
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7.2.2.15 LLC Output Capacitors  
The LLC converter topology does not require an output filter although a small second stage filter inductor may be  
useful in reducing peak-to-peak output noise. Assuming that the output capacitors carry the rectifier’s full wave  
output current then the capacitor ripple current rating is:  
Œ
Œ
IRECT  
=
IOUT  
=
ì10 = 11.11A  
2 2  
2 2  
(43)  
(44)  
Use 20 V rating for 12-V output voltage:  
VLLCcap = 20V  
The capacitor’s RMS current rating is:  
2
2
Œ  
Œ  
IC out  
=
IOUT ÷ - IO2UT  
=
ì10 -102 = 4.84A  
÷
(
)
2 2  
2 2  
«
«
(45)  
Solid Aluminum capacitors with conductive polymer technology have high ripple-current ratings and are a good  
choice here. The ripple-current rating for a single capacitor may not be sufficient so multiple capacitors are often  
connected in parallel.  
The ripple voltage at the output of the LLC stage is a function of the amount of AC current that flows in the  
capacitors. To estimate this voltage, assume that all the current, including the DC current in the load, flows in the  
filter capacitors.  
VOUT pk -pk  
0.3V  
(
)
ESRmax  
=
=
= 19mW  
Œ
IRECT pk  
(
)
2
ì10A  
4
(46)  
The capacitor specifications are:  
Voltage Rating: 20 V  
Ripple Current Rating: 4.84 A  
ESR: < 19 mΩ  
7.2.2.16 HV Pin Series Resistors  
Multiple resistors are connected in series with the HV pin to limit the power dissipation of the UCC256302 device.  
The recommended series resistor for the HV pin is 5kΩ.  
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7.2.2.17 BLK Pin Voltage Divider  
BLK pin senses the LLC input voltage and determines when to turn on and off the LLC converter. Different  
versions of UCC256302 have different BLK thresholds.  
Choose bulk startup voltage at 340 V, then the BLK resistor divider ratio can be calculated as below:  
340V  
kBLK  
=
= 113.33  
3V  
(47)  
The desired power consumption of the BLK pin resistor divider is PBLKsns = 10 mW. The BLK sense resistor total  
value is given by:  
V2  
3902  
IN nom  
(
)
RBLKsns  
=
=
= 15.21MW  
PBLKsns  
0.01  
(48)  
The lower BLK divider resistor value is given by:  
RBLKsns  
15.21MW  
113.33  
RBLKlower  
=
=
= 134kW  
kBLK  
(49)  
(50)  
(51)  
The higher BLK divider resistor value is given by:  
RBLKupper = RBLKsns - RBLKlower = 15.08MW  
The actual bulk voltage thresholds can be calculated:  
VBulkStart = 340V  
(52)  
(53)  
(54)  
4
VBulkOVRise = 340V ì = 453V  
3
3.75  
VBulkOVFall = 340V ì  
= 425V  
3
7.2.2.18 BW Pin Voltage Divider  
BW pin senses the output voltage through the bias winding and protects the power stage from over voltage. The  
nominal output voltage is 12 V. The bias winding has 3 turns, and the secondary side winding has 2 turns. So the  
nominal voltage of the bias winding is given by:  
3
VBiasWindingNom = 12V ì = 18V  
2
(55)  
The desired OVP threshold in this design is 115% of the nominal value. The OVP threshold level in UCC256302  
device is 4 V, so the nominal BW pin voltage is given by:  
4V  
VBWnom  
=
= 3.48V  
115%  
(56)  
(57)  
Choose the lower resistor of the BW resistor divider to be 10 k.  
RBWlower = 10kW  
The upper resistor can be calculated by:  
V
-VBWnom  
«
÷
18 - 3.48  
BiasWindingNom  
RBWupper = RBWlower  
ì
= 10kW ì  
= 41.75kW  
«
÷
VBWnom  
3.48  
(58)  
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7.2.2.19 ISNS Pin Differentiator  
ISNS pin sets the over current protection level. OCP1 is peak current protection level; OCP2 and OCP3 are  
average current protection levels. The threshold voltages are 0.6 V, 0.8 V, and 4 V, respectively.  
Set OCP3 level at 150% of full load. Thus, the sensed average input current level at full load is given by:  
0.6V  
V
=
= 0.4V  
ISNSfullload  
150%  
The current sense ratio can then be calculated:  
(59)  
V
0.4V  
120W  
ISNSfullload  
kISNS  
=
=
= 1.222dW  
«
÷
1
POUT  
1
ì
ì
«
÷
0.94 390V  
Vbulknom  
(60)  
(61)  
Select a current sense capacitor first, since there are less high voltage capacitor choices than resistors:  
CISNS = 150pF  
Then calculate the required ISNS resistor value:  
kISNSCr  
CISNS  
1.222dW ì 44n  
150 p  
RISNS  
=
=
= 358.45dW  
(62)  
(63)  
After the current sense ratio is determined, the peak ISNS pin voltage at full load can be calculated:  
2Ir ìkISNS 2 ì1.009Aì1.222dW = 1.74V  
V
=
=
ISNSpeak  
The peak resonant current at OCP1 level is given by:  
4V  
IrespeakOCP1  
=
= 3.27 A  
1.222W  
The peak secondary-side current at OCP1 level is given by:  
(64)  
(65)  
Npri  
32  
2
IsecpeakOCP1 = IrespeakOCP1  
= 3.27Aì  
= 52.37A  
Nsec  
7.2.2.20 VCR Pin Capacitor Divider  
The capacitor divider on the VCR pin sets two parameters: (1) the divider ratio of the resonant capacitor voltage;  
(2) the amount of frequency compensation to be added. The first criteria the capacitor divider needs to meet is  
that under over load condition, the peak-to-peak voltage on VCR pin is with in 6 V.  
As derived earlier, the following relationship between VCOMP voltage, ΔVCR, switching period, input average  
current, and the VCR capacitor divider is shown in Equation 66  
C1  
1
1
T
VCOMP = DVCR ö  
ìIIN avg ìT + ICOMP  
ì
ì
(
)
C1 +C2 Cr  
C1 +C2  
2
(66)  
In this equation, C1 is the upper capacitor on the capacitor divider; C2 is the lower capacitor on the capacitor  
divider. VCOMP is contributed by two parts – the divided resonant capacitor voltage, and the voltage generated  
by the VCR pin internal current sources. Define the contribution of the internal current source to be KVCRRamp  
.
1
T
ICOMP  
ì
ì
C1 +C2  
2
1
kVCRRamp  
=
=
C1  
C1 +C2 Cr  
IIN avg  
1
1
T
C1  
(
)
ìIIN avg ìT + ICOMP  
ì
ì
ì 2 +1  
(
)
C1 +C2  
2
Cr ICOMP  
(67)  
Select C1 and C2 so that KVCRRamp is within 0.1 ~ 0.6 range, and at over load condition, VCOMP is less than 6 V.  
In this example C1 = 150 pF and C2 = 15 nF is select.  
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7.2.2.21 Burst Mode Programming  
The burst mode programming interface enables user to program a burst mode threshold voltage (VLL) which  
adaptively changes with input voltage. This way, consistent burst threshold can be achieved across VIN range,  
thus making the efficiency curve more consistent across VIN range.  
The following relationship exists between VLL voltage and BLK pin voltage:  
VLL = a ìVBLK + b  
(68)  
In this equation, VLL is the burst mode threshold voltage; VBLK is BLK pin voltage; two parameters a and b can  
be programmed by two external resistors.  
After soft start is done, the sensed BLK pin voltage is applied to LL/SS pin from inside the IC through a buffer. As  
shown in the figure below, this creates a difference between the current flowing through the programming resistor  
RLLUpper and RLLLower. The difference between the current flows into the LL/SS pin, mirrored and then applied to a  
250-kresistor RLL. The voltage on RLL is used as VLL.  
!ë55  
RVCC  
LL/SS  
R2  
9
-
+
-
R1  
ë[[  
+
ë.[Y  
!Db5  
Figure 49. Burst Mode Programming  
The relationship between VLL and VBLK can then be derived:  
VRVCC -VBLK  
VBLK  
VLL  
-
=
RLLUpper  
RLLLower RLL  
(69)  
(70)  
Equation 69 rearranged produces Equation 70  
R
+ RLLLower ìR  
(
)
RLL  
LLUpper  
LL  
VLL = -  
ìVBLK +  
VRVCC  
RLLUpper RLLLower  
RLLUpper  
To determine RLLUpper and RLLLower, two sets of (VLL, VBLK) values are required. VBLK can be measured directly  
from BLK pin. VLL level can be measured by inserting a 10-kresistor between the feedback optocoupler  
emitter and ground. Assume the voltage measured on the 10-kresistor is V10k. Then VLL voltage can be  
calculated as:  
V
10kW  
VLL = I  
-
ì100kꢀ  
÷
÷
FB  
10kꢀ  
«
(71)  
Remove the RLLUpper. In this way, the VLL voltage is at its minimal value 0.7 V, which is determined by the  
internal circuit design. Then adjust the load current to the desired burst mode threshold load level, and make  
sure the power stage does not burst in this condition. For example, 10% load is the desired burst mode threshold  
level. With 10 A as the full-load condition, set the load current to 1 A. After the load current is set, change the  
input voltage to two different voltages and record two different readings (V10k, VBLK). Then based on  
Equation 70 and Equation 71, RLLUpper and RLLLower can be solved.  
In this example select the lower resistor to be 402 kΩ and the upper resistor to be 732 kΩ.  
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7.2.2.22 Soft-Start Capacitor  
The soft-start capacitor sets the speed of the soft-start ramp. The soft start time varies with load condition. At full  
load or over load condition, the soft start time is the longest. It is not easy to calculate the exact soft start time  
value. However, it can be estimated that under full load condition, the longest possible soft start time is given by:  
7V ìCSS  
25 A  
TSS  
=
(72)  
Using a 150-nF soft-start capacitor, gives the longest possible soft-start time as 42 ms according to Equation 72.  
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7.2.3 Application Curves  
12.03  
12.025  
12.02  
12.015  
12.01  
12.005  
12  
94  
92  
90  
88  
86  
84  
82  
80  
78  
76  
Vin = 390 V  
0
1
2
3
4
5
6
7
8
9
10  
0
2
4
6
8
10  
Iout (A)  
Iout (A)  
D002  
D002  
Figure 50.  
Figure 51.  
Transient Response  
Transient Response  
Figure 52.  
Figure 53.  
54  
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Output Ripple  
Figure 54.  
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8 Power Supply Recommendations  
8.1 VCC Pin Capacitor  
The VCC capacitor should be sized based on the total start-up charge required by the system. The start-up  
charge will mostly be consumed by the gate driver circuit. Thus the total start-up charge can be estimated by the  
start-up switching frequency, MOSFET gate charge, and the soft-start time.  
Assume the total start-up charge required by the system is shown in Equation 73  
Qtot = 1.6mC  
(73)  
(74)  
During PFC and LLC startup phase, the maximum VCC voltage drop allowed is  
Vccdropmax = 26V -10.5V = 15.5V  
The minimum VCC capacitor needed:  
Q
tot  
CVCC  
=
= 103 F  
Vccdropmax  
(75)  
Choose 110-µF capacitor.  
8.2 Boot Capacitor  
During burst off period, power consumed by the high side gate driver from the HB pin must be drawn from CBOOT  
and will cause its voltage to decay. At the start of the next burst period there must be sufficient voltage remaining  
on CBOOT to power the high side gate driver until the conduction period of LO allows it to be replenished from  
CRVCC. The power consumed by the high side driver during this burst off period will therefore have a direct impact  
on the size and cost of capacitors that must be connected to CBOOT and RVCC.  
Assume the system has a maximum burst off period of 10 ms.  
tmaxoff = 10ms  
(76)  
Assume the bootstrap diode has a forward voltage drop of 1 V:  
Vbootforwarddrop = 1V  
(77)  
Assume the boot voltage to be always above 8 V to avoid UVLO fault. Then the maximum allowed voltage drop  
on boot capacitor is:  
Vbootmaxdrop =VRVCC -Vbootforwarddrop - 8V = 12V -1V - 8V = 3V  
(78)  
Boot capacitor can then be sized:  
Ibootleak maxoff  
t
85Aì10ms  
3V  
Cboot  
=
=
= 284nF  
Vbootmaxdrop  
(79)  
1200  
1000  
800  
600  
400  
200  
0
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
D002  
Maximum Burst Off Period (ms)  
Figure 55. Minimum Required Boot Capacitance vs. Maximum Burst Off Period  
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8.3 RVCC Pin Capacitor  
RVCC capacitor needs to be at least 5 times of boot capacitor. In addition, sizing of the RVCC capacitor depends  
on the stability of RVCC LDO. If load is light on RVCC, smaller capacitors can be used. The larger the load, the  
larger the capacitor is needed. In a typical system, the RVCC LDO powers the PFC and LLC gate drivers. The  
plot below shows the worst case RVCC LDO phase margin versus RVCC capacitor for various load currents.  
RVCC capacitor should be sized based on the figure below.  
60  
DC Load Current (mA)  
1
10  
25  
50  
50  
40  
30  
20  
10  
0
75  
1
2
3
4
5
6
7
8
9
10  
D003  
RVCC Capacitance (mF)  
Figure 56. RVCC Pin Capacitor  
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9 Layout  
9.1 Layout Guidelines  
Put a 2.2-µF ceramic capacitor on VCC pin in addition to the energy storage electrolytic capacitor. The 2.2-µF  
ceramic capacitor should be put as close as possible to the VCC pin.  
RVCC pin should have a bypass capacitor of 4.7 µF or more. It is recommended to add a 0.1-µF ceramic  
capacitor in addition to the 4.7 µF. The capacitors should be put as close as possible to the RVCC pin. RVCC  
cap needs to be at least 5 times of boot capacitor.  
Minimum recommended boot capacitor is 0.1 µF. The minimum value of the boot capacitor needs to be  
determined by the minimum burst frequency. The boot capacitor should be large enough to hold the bootstrap  
voltage during the lowest burst frequency. Please refer to the boot leakage current in the electrical table.  
Use large copper pour around GND pin  
The filtering capacitor on BW, ISNS, BLK should be put as close as possible to the pin  
FB trace should be as short as possible  
Soft-start capacitor should be put as close as possible to LL/SS pin  
Use film capacitor or C0G, NP0 ceramic capacitor on VCR divider and ISNS capacitor for low distortion  
It is recommended that ISNS resistor is less than 500 Ω to keep the node impedance low  
Add necessary filtering capacitors on BW pin to filter out the high spikes on the bias winding waveform. It is  
critical to filter out the high spikes because internally the signal is peak detected and then sampled at the low  
side turn off edge.  
Do not put any capacitor on HV pin to ground. The layout of this pin should result in low parasitic capacitance  
(<60 pF) from HV pin to ground.  
Keep necessary high voltage clearance  
9.2 Layout Example  
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10 Device and Documentation Support  
10.1 Device Support  
10.1.1 Development Support  
10.1.1.1 Custom Design With WEBENCH® Tools  
Click here to create a custom design using the UCC256302 device with the WEBENCH® Power Designer.  
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.  
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.  
3. Compare the generated design with other possible solutions from Texas Instruments.  
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time  
pricing and component availability.  
In most cases, these actions are available:  
Run electrical simulations to see important waveforms and circuit performance  
Run thermal simulations to understand board thermal performance  
Export customized schematic and layout into popular CAD formats  
Print PDF reports for the design, and share the design with colleagues  
Get more information about WEBENCH tools at www.ti.com/WEBENCH.  
10.2 Documentation Support  
10.2.1 Related Documentation  
For related documentation see the following:  
Design Spreadsheet, UCC25630 Design Calculator, UCC634  
User Guide, Using UCC25630-1EVM-291,  
10.3 Receiving Notification of Documentation Updates  
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper  
right corner, click on Alert me to register and receive a weekly digest of any product information that has  
changed. For change details, review the revision history included in any revised document.  
10.4 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
10.5 Trademarks  
E2E is a trademark of Texas Instruments.  
WEBENCH is a registered trademark of Texas Instruments.  
10.6 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.  
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10.7 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
11 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
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10-Dec-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
UCC25630-2DDBR  
UCC25630-2DDBT  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
DDB  
DDB  
14  
14  
2500 RoHS & Green  
250 RoHS & Green  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
-40 to 125  
-40 to 125  
UCC256302  
UCC256302  
NIPDAU  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
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10-Dec-2020  
Addendum-Page 2  
PACKAGE OUTLINE  
DDB0014A  
SOIC - 1.75 mm max height  
S
C
A
L
E
1
.
8
0
0
SOIC  
C
6.2  
5.8  
TYP  
SEATING PLANE  
0.1 C  
PIN 1 ID  
AREA  
A
10X 1.27  
16  
1
10.0  
9.8  
NOTE 3  
2X  
8.89  
8
9
0.51  
14X  
4.0  
3.8  
NOTE 4  
0.31  
B
1.75 MAX  
0.25  
C A B  
0.25  
TYP  
0.13  
0.25  
GAGE PLANE  
SEE DETAIL A  
0.25  
1.27  
0 - 8  
0.10  
0.40  
DETAIL A  
TYPICAL  
4222925/A 04/2016  
NOTES:  
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not  
exceed 0.15 mm per side.  
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.43 mm per side.  
5. Reference JEDEC registration MS-012, variation AC.  
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EXAMPLE BOARD LAYOUT  
DDB0014A  
SOIC - 1.75 mm max height  
SOIC  
14X (1.55)  
14X (0.6)  
SYMM  
1
16  
(4.445)  
TYP  
10X (1.27)  
SYMM  
(R0.05)  
TYP  
9
8
(5.4)  
LAND PATTERN EXAMPLE  
SCALE:8X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
0.07 MAX  
ALL AROUND  
0.07 MIN  
ALL AROUND  
SOLDER MASK  
DEFINED  
NON SOLDER MASK  
DEFINED  
SOLDER MASK DETAILS  
4222925/A 04/2016  
NOTES: (continued)  
6. Publication IPC-7351 may have alternate designs.  
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
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EXAMPLE STENCIL DESIGN  
DDB0014A  
SOIC - 1.75 mm max height  
SOIC  
14X (1.55)  
14X (0.6)  
SYMM  
1
16  
(4.445)  
TYP  
14X (1.27)  
SYMM  
8
9
(5.4)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
SCALE:8X  
4222925/A 04/2016  
NOTES: (continued)  
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
9. Board assembly site may have different recommendations for stencil design.  
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IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
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