UCC25630-2DDBR [TI]
支持低待机功耗且具有高压启动功能的 LLC 谐振控制器 | DDB | 14 | -40 to 125;型号: | UCC25630-2DDBR |
厂家: | TEXAS INSTRUMENTS |
描述: | 支持低待机功耗且具有高压启动功能的 LLC 谐振控制器 | DDB | 14 | -40 to 125 控制器 高压 开关 光电二极管 |
文件: | 总66页 (文件大小:1883K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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UCC256302
SLUSD69 –NOVEMBER 2017
UCC256302 LLC Resonant Controller with High Voltage Startup
Enabling Low Standby Power
1 Features
3 Description
The UCC256302 is a fully featured LLC controller
with integrated high-voltage gate driver. It has been
designed for use in offline AC-DC or isolated DC-DC
1
•
Integrated High Voltage Startup
–
Eliminates Need for External
Bias Supply
to provide
a complete power system using a
•
•
Best-in-Class Transient Response
Hybrid Hysteretic Control (HHC)
minimum of external components. The resulting
power system is designed to meet the most stringent
requirements for standby power without the need for
a separate standby power converter.
–
–
Best-in-Class Transient Response
Easy Compensation Design
UCC256302 includes an integrated, high voltage
startup function which eliminates the need for an
external bias supply, reducing BOM count and
minimizing solution size. UCC256302 uses hybrid
hysteretic control to provide best in class line and
load transient response. The control makes the open
loop transfer function a first order system so that it’s
very easy to compensate.
•
Optimized Low Power Features Enable 75 mW
Standby Power Design with PFC on
–
Advanced Burst Mode
Opto-Coupler Low Power Operation
–
Helps Enable Compliance to CoC Tier II
Standard
•
•
•
•
Fast Exit from Burst Mode
UCC256302 provides a high efficient burst mode with
consistent burst power level during each burst on
cycle. The burst power level is programmable and
adaptively changes with input voltage, making the
optimization of efficiency very easy.
Improved Capacitive Region Avoidance Scheme
Adaptive Dead-Time
Internal High-Side Gate Drivers
(0.6-A and 1.2-A Capability)
•
•
Robust Soft Start with No Hard Switching
Select the appropriate LLC resonant controller for
your design with UCC25630x Selection Guide
Over Temperature, Output Over Voltage, Input
Over and Under Voltage Protection with
Three Levels of Over Current Protections
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
•
•
Wide Operating Frequency Range
(35 kHz to 1 MHz)
UCC256302
SOIC (14)
9.9 mm x 3.9 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Select the appropriate LLC resonant controller for
your design with UCC25630x Selection
GuideUCC25630x Selection Guide
Simplified Schematic
•
Create a Custom Design Using the UCC256302
With the WEBENCH® Power Designer
2 Applications
•
•
•
•
•
•
•
•
•
•
•
Digital TV SMPS
AC-DC Adapter
Multi-Functional Printers
Projectors
Merchant DC-to-DC
High Power Battery Charging
DIN Rail Power Supply
Multi-Axis Servo
ATX Power Supply
Appliances
LED Lighting Applications
Industrial AC-DC
•
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC256302
SLUSD69 –NOVEMBER 2017
www.ti.com
Table of Contents
7.1 Application Information............................................ 42
7.2 Typical Application ................................................. 42
Power Supply Recommendations...................... 56
8.1 VCC Pin Capacitor.................................................. 56
8.2 Boot Capacitor ........................................................ 56
8.3 RVCC Pin Capacitor ............................................... 57
Layout ................................................................... 58
9.1 Layout Guidelines ................................................... 58
9.2 Layout Example ...................................................... 58
1
2
3
4
5
Features.................................................................. 1
Applications ........................................................... 1
Description ............................................................. 1
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
5.1 Absolute Maximum Ratings ...................................... 4
5.2 ESD Ratings.............................................................. 4
5.3 Recommended Operating Conditions....................... 4
5.4 Thermal Information.................................................. 5
5.5 Electrical Characteristics........................................... 5
5.6 Switching Characteristics.......................................... 7
5.7 Typical Characteristics.............................................. 8
Detailed Description ............................................ 13
6.1 Overview ................................................................. 13
6.2 Functional Block Diagram ....................................... 15
6.3 Feature Description................................................. 16
6.4 Device Functional Modes........................................ 29
Application and Implementation ........................ 42
8
9
10 Device and Documentation Support ................. 59
10.1 Device Support...................................................... 59
10.2 Documentation Support ....................................... 59
10.3 Receiving Notification of Documentation Updates 59
10.4 Community Resources.......................................... 59
10.5 Trademarks........................................................... 59
10.6 Electrostatic Discharge Caution............................ 59
10.7 Glossary................................................................ 60
6
7
11 Mechanical, Packaging, and Orderable
Information ........................................................... 60
2
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SLUSD69 –NOVEMBER 2017
4 Pin Configuration and Functions
DDB Package
16-Pin SOIC
Top View
1
HV
16
15
14
HS
HO
HB
3
4
5
6
7
8
VCC
UCC256302
LLC
Controller
BLK
FB
RVCC
GND
12
11
10
9
ISNS
VCR
LO
LL/SS
BW
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
This pin is used to sense the PFC output voltage level. A resistive divider should be used to
attenuate the signal before it is applied to this pin. The voltage level on this pin will determine
when the LLC converter start/stops switching. The sensed BLK voltage is also used to adjust
the burst mode threshold to improve efficiency over the input voltage range.
BLK
4
I
I
This pin is used to sense the output voltage through the bias winding. The sensed voltage is
used for output over voltage protection.
BW
8
LLC stage control feedback input. The amount of current sourced from this pin will determine
the LLC input power level.
FB
5
I
GND
11
G
Ground reference for all signals.
High-side gate-drive floating supply voltage. The bootstrap capacitor is connected between
this pin and pin HS. A high voltage, high speed diode should be connected from RVCC to
this pin to supply power to the upper MOSFET driver during the period when the lower
MOSFET is conducting.
HB
14
I
HO
HS
15
16
O
I
High-side floating gate-drive output.
High-side gate-drive floating ground. Current return for the high-side gate-drive current.
Connects to Internal HV startup JFET. This pin provides start up power for both PFC and
LLC stage.
HV
1
6
I
I
Resonant current sense. The resonant capacitor voltage is differentiated with a first order
filter to measure the resonant current
ISNS
The capacitance value connected from this pin to ground will define the duration of the soft-
start period. This pin is also used to program the burst mode threshold; the resistor divider
on this pin programs the burst mode threshold and the threshold scaling factor with BLK pin
voltage.
LL/SS
9
I
LO
10
2
O
N/A
N/A
P
Low-side gate-drive output.
Missing
Missing
RVCC
VCC
Functional creepage and clearance
Functional creepage and clearance
Regulated 12-V supply. This pin is used to supply the gate driver and PFC controller.
Supply input.
13
12
3
P
VCR
7
I
Resonant capacitor voltage sense
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SLUSD69 –NOVEMBER 2017
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5 Specifications
5.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted), all voltageages are with respect to GND, currents are
positive into and negative out of the specified terminal.(1)
MIN
MAX
UNIT
V
Input voltage
HV, HB
BLK, FB, LL/SS
VCR
-0.3
-0.3
-0.3
-0.3
-0.3
-5
640
7
V
7
V
HB - HS
VCC
17
30
7
V
V
BW, ISNS
DC
V
RVCC output
voltage
-0.3
17
V
DC
HS – 0.3
HS - 2
-0.3
HB + 0.3
HB + 0.3
HO output voltage
LO output voltage
V
V
Transient, less than 100ns
DC
RVCC + 0.3
RVCC + 0.3
Transient, less than 100ns
-2
Floating ground
slew rate
dVHS/dt
-50
50
V/ns
A
HO, LO pulsed
current
IOUT_PULSED
-0.6
1.2
Junction
temperature
range
TJ
-40
-65
150
150
Storage
temperature
range
°C
Tstg
Soldering, 10 second
Reflow
300
260
Lead temperature
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
5.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, high
voltage pins(1)
±1000
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, all other
pins(1)
V(ESD)
Electrostatic discharge
±2000
±500
V
Charged device model (CDM), per
JEDEC specification JESD22-C101, all
pins(2)
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, currents are positive into and negative out of the specified
terminal, unless otherwise noted.
MIN
NOM
MAX
600
26
UNIT
HV, HS
VCC
Input voltage
V
V
V
Supply voltage
13
10
15
12
HB - HS
Driver bootstrap voltage
16
4
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Recommended Operating Conditions (continued)
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, currents are positive into and negative out of the specified
terminal, unless otherwise noted.
MIN
0.1
NOM
MAX
UNIT
µF
CB
Ceramic bypass capacitor from HB to HS
RVCC pin decoupling capacitor
5
CRVCC
IRVCCMAX
TA
4.7
µF
(1)
Maximum output current of RVCC
100
125
mA
°C
Operating ambient temperature
-40
(1) Not tested in production. Insured by characterization
5.4 Thermal Information
UCC25630
THERMAL METRIC(1)
D (SOIC)
14 PINS
74.7
UNIT
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
30.7
31.8
Junction-to-top characterization parameter
Junction-to-board characterization parameter
4.4
ΨJB
31.4
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
5.5 Electrical Characteristics
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =15V, currents are positive into and negative out of the
specified terminal, unless otherwise noted.
PARAMETER
SUPPLY VOLTAGE
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Below this threshold, use reduced
start up current
VCCShort
0.5
10.2
25
0.6
10.5
26
0.7
10.8
28
V
V
V
VCCReStartJfet Below this threshold, re-enable JFET.
In self bias mode, gate starts switching
above this level
VCCStartSelf
SUPPLY CURRENT
Current drawn from VCC rail during
burst off period
ICCSleep
VCC = 15V
475
565
2.2
700
µA
Current drawn from VCC Pin while
gate is switching. Excluding Gate
Current
ICCRun
VCC = 15V, maximum dead time
1.75
2.65
mA
REGULATED SUPPLY
Regulated supply voltage
VCC = 15V
VCC = 13V
11.60
11.2
12
11.8
7
12.40
12.25
V
V
V
VRVCC
VRVCCUVLO
RVCC under voltage lock out voltage
(1)
HIGH VOLTAGE STARTUP
IHVLow
IHVHigh
IHVLeak
Reduced startup pin current
0.28
7.6
0.41
10.20
3.37
0.54
12.6
7.55
mA
mA
µA
Full startup pin current
HV current source leakage current
1.40
BULK VOLTAGE SENSE
Input voltage that allows LLC to start
switching
VBLKStart
Voltage rising
2.99
3.05
3.095
V
(1) Not tested in production. Insured by characterization
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Electrical Characteristics (continued)
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =15V, currents are positive into and negative out of the
specified terminal, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage that forces LLC
operation to stop
VBLKStop
Voltage falling
2.13
2.17
2.23
V
Input voltage that causes switching to
stop
VBLKOVRise
VBLKOVFall
Voltage rising
Voltage falling
3.94
3.64
4.03
3.76
4.11
3.86
V
V
Input voltage that causes switching to
re-start
FEEDBACK PIN
RFBInternal Internal pull down resistor value
IFB
90.7
76.5
1
101.5
85.1
112.3
93.6
kΩ
µA
FB internal current source
f-3dB
Feedback chain -3dB cut off frequency
MHz
(2)
RESONANT CURRENT SENSE
VISNS_OCP1 OCP1 threshold
3.97
4.03
5
4.07
V
V
(1)
VISNS_OCP1_S OCP1 threshold during soft start
S
VISNS_OCP2
VISNS_OCP3
OCP2 threshold
OCP3 threshold
0.68
0.49
0.84
0.64
0.99
0.79
V
V
The time the average input current
needs to stay above OCP2 threshold
before OCP2 is triggered
TISNS_OCP2
2
ms
(1)
The time the average input current
needs to stay above OCP3 threshold
before OCP3 is triggered
TISNS_OCP3
50
ms
(1)
Resonant current polarity detection
hysteresis
VIpolarityHyst
nOCP1
16.9
30.7
4
44.7
mV
Number of OCP1 cycles before OCP1
(1)
fault is tripped
RESONANT CAPACITOR VOLTAGE SENSE
VCM
Internal common mode voltage
2.91
1.63
3.02
1.84
3.14
2.10
1.25
V
mA
%
Frequency compensation ramp current
source value
IRAMP
IMismatch
Pull up and pull down ramp current
-1.25
(3)
source mismatch
SOFT START
Current output from SS pin to charge
up the soft start capacitor
ISSUp
21.8
222
25.8
401
29.8
580
µA
RSSDown
SS pin pull down resistance
ZCS or OCP1
Ω
GATE DRIVER
VLOL
LO output low voltage
Isink = 20mA
Isource = 20mA
Isink = 20mA
Isource = 20mA
0.027
0.113
0.027
0.113
7.35
0.052
0.178
0.053
0.173
7.94
0.087
0.263
0.087
0.263
8.70
V
V
V
V
V
VRVCC - VLOH LO output high voltage
VHOL - VHS
VHB - VHOH
HO output low voltage
HO output high voltage
VHB-
HSUVLORise
High side gate driver UVLO rise
threshold
VHB-
HSUVLOFall
Isource_pk
High side gate driver UVLO fall
threshold
6.65
7.25
7.76
V
(2)
HO, LO peak source current
-0.6
1.2
A
A
(2)
Isink_pk
HO, LO peak sink current
BOOTSTRAP
(2) Not tested in production. Insured by design
(3) IMismatch calculated as average of (IPD-(IPD+IPU)/(IPD+IPU)/2)) and (IPU-(IPD+IPU)/((IPD+IPU)/2)
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Electrical Characteristics (continued)
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =15V, currents are positive into and negative out of the
specified terminal, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IBOOT_QUIESC
ENT
(HB - HS) quiescent current
HB - HS = 12V
51.10
74.40
97.70
µA
IBOOT_LEAK
HB to GND leakage current
Length of charge boot state
0.02
234
0.40
267
5.40
296
µA
µs
tChargeBoot
BIAS WINDING
VBWOVRise
BURST MODE
RLL
Output voltage OVP
-4.1
240
±1
-3.97
250
-3.86
258
V
kΩ
V/ns
s
LL voltage scaling resistor value
ADAPTIVE DEADTIME
(1)
dVHS/dt
Detectable PSN slew rate
±50
FAULT RECOVERY
(1)
tPauseTimeOut
Paused timer
1
THERMAL SHUTDOWN
(1)
TJ_r
Thermal shutdown temperature
Temperature rising
125
145
20
°C
°C
(1)
TJ_H
Thermal shutdown hsyterisis
5.6 Switching Characteristics
All voltages are with respect to GND, -40°C< TJ =TA < 125°C, VCC =12V, currents are positive into and negative out of the
specified terminal, unless otherwise noted.
PARAMETER
Rise time
TEST CONDITIONS
10% to 90%, 1nF load
MIN
18
TYP
35
MAX
50
UNIT
ns
tr(LO)
tf(LO)
Fall time
10% to 90%, 1nF load
10% to 90%, 1nF load
10% to 90%, 1nF load
15
25
50
ns
tr(HO)
tf(HO)
tDT(min)
Rise time
18
35
50
ns
Fall time
15
25
50
ns
(1)
Minimum dead time
100
ns
Maximum dead time (dead time fault)
tDT(max)
150
µs
(1)
(1)
tON(min)
tON(max)
Minimum gate on time
250
ns
µs
(1)
Maximum gate on time
14.5
(1) Not tested in production. Insured by design
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5.7 Typical Characteristics
10.5
10.4
10.3
10.2
10.1
10
0.43
0.42
0.41
0.4
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
0.39
9.9
9.8
0.38
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D001
D002
Figure 1. IHVHigh vs Temperature
Figure 2. IHVLow vs Temperature
80
60
40
20
0
6
5
4
3
2
1
0
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
Dm0a0s3t
D004
Figure 3. IHVLeak vs Temperature
Figure 4. IBOOT_QUIESCENT vs Temperature
2.5
2
1.88
1.87
1.86
1.85
1.84
1.83
1.82
1.81
VCC = 13 V
VCC = 15 V
VCC = 25 V
1.5
1
0.5
0
VCC = 13 V
VCC = 15 V
VCC = 25 V
-0.5
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D005
D006
Figure 5. IBOOT_LEAK vs Temperature
Figure 6. IRAMP vs Temperature
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Typical Characteristics (continued)
252
251
250
249
248
247
1
0.8
0.6
0.4
0.2
0
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
-0.2
-0.4
-0.6
-0.8
-1
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D007
D008
Figure 7. IMISMATCH vs Temperature
Figure 8. RLL vs Temperature
12.04
12.02
12
12.2
12
11.8
11.6
11.4
11.2
11
11.98
11.96
11.94
11.92
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D009
D001
Figure 9. VRVCC vs Temperature
Figure 10. VRVCC vs Temperature
0.66
0.64
0.62
0.6
2.35
2.3
VCC = 13 V
VCC = 15 V
VCC = 25 V
2.25
2.2
0.58
0.56
0.54
2.15
VCC = 13 V
VCC = 15 V
VCC = 25 V
2.1
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D001
D001
Figure 11. iCCSleep vs Temperature
Figure 12. ICCRun vs Temperature
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Typical Characteristics (continued)
3.04
105
104
103
102
101
100
99
VCC = 13 V
VCC = 15 V
VCC = 25 V
3.035
3.03
3.025
3.02
VCC = 13 V
VCC = 15 V
VCC = 25 V
3.015
3.01
98
-50
-25
-25
-25
0
25
50
75
100
125
150
-60
-35
-25
-25
-10
15
40
65
90
115
140
Temperature (èC)
Temperature (èC)
D001
D001
D001
D001
D001
D002
Figure 13. VCM vs Temperature
Figure 14. RFB vs Temperature
86.5
86
26.4
26.2
26
85.5
85
25.8
25.6
25.4
25.2
84.5
84
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
83.5
-50
0
25
50
75
100
125
150
-50
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
Figure 15. IFB vs Temperature
Figure 16. ISSUp vs Temperature
500
8.15
8.1
VCC = 13 V
VCC = 15 V
VCC = 25 V
400
300
200
100
0
8.05
8
7.95
7.9
7.85
7.8
VCC = 13 V
VCC = 15 V
VCC = 25 V
7.75
-50
0
25
50
75
100
125
150
-50
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
Figure 17. RSSDown vs Temperature
Figure 18. IHB-HSUVLORise vs Temperature
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Typical Characteristics (continued)
80
60
40
20
0
7.29
7.28
7.27
7.26
7.25
7.24
7.23
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D002
D002
D002
D002
Figure 19. IHB-HSUVLOFall vs Temperature
Figure 20. VLOL vs Temperature
300
80
60
40
20
0
250
200
150
100
50
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D002
Figure 21. VRVCC-VLOH vs Temperature
Figure 22. VHOL- VHS vs Temperature
300
250
200
150
100
50
26.15
26.1
26.05
26
VCC = 13 V
VCC = 15 V
VCC = 25 V
VCC = 13 V
VCC = 15 V
VCC = 25 V
0
-50
25.95
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
Temperature (èC)
D002
Figure 23. VHB - VHOH vs Temperature
Figure 24. VCCStartself vs Temperature
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Typical Characteristics (continued)
10.463
10.46
10.457
10.454
10.451
VCC = 13 V
VCC = 15 V
VCC = 25 V
10.448
-50
-25
0
25
50
75
100
125
150
Temperature (èC)
D002
Figure 25. VCCReStartJfet vs Temperature
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6 Detailed Description
6.1 Overview
The high level of integration of UCC256302 enables significant reduction in the list of materials and solution size
without compromising functionality. UCC256302 achieves extremely low standby power using burst mode. The
device's novel control scheme offers excellent transient performance and simplified compensation.
Many consumer and industrial applications with mid-high power consumption, including large screen televisions,
AC-DC adapters, server power supplies, and LED drivers, employ PFC + LLC power supplies because they offer
improved efficiency, and small size, compared with a PFC + Flyback topology. A disadvantage of the PFC + LLC
power supply system is that it naturally offers poor light load efficiency and high no-load power because the LLC
stage requires a minimum amount of circulating current to maintain regulation. To meet light load efficiency and
no load power requirement it is therefore necessary to use an auxiliary flyback converter that runs continuously
and allows the main PFC + LLC power system to be shut down when the system enters low power or standby
mode. UCC256302 LLC controller is designed to make a LLC power supply system with advanced control
algorithm and high efficient burst mode. UCC256302 contains a number of novel features that enable it to offer
excellent light load efficiency and no load power. This will allow customers to design power systems that meet
150-mW no-load power target without needing an auxiliary flyback converter. UCC256302 includes a high-
voltage startup JFET to initially charge the VCC capacitor to provide the energy needed to start the PFC and LLC
power system. Once running, power for the PFC and LLC controllers is derived from a bias winding on the LLC
transformer.
UCC256302 uses a novel control algorithm, Hybrid Hysteretic Control (HHC), to achieve regulation. In this
control algorithm, the switching frequency is defined by the resonant capacitor voltage, which carries accurate
input current information. Therefore, the control effort controls the input current directly. This enables excellent
load and line transient response, and high efficient burst mode. In addition, comparing with traditional Direct
Frequency Control (DFC), HHC changes the system to a first order system. Therefore, the compensation design
is much easier and can achieve higher loop bandwidth.
UCC256302 includes robust algorithms for avoiding ZCS operation region. When near ZCS operation is
detected, UCC256302 over-rides the feedback signal and ramps up the switching frequency until operation is
restored. After which the switching frequency is ramped back down at a rate determined by the soft-start
capacitor until control has been handed back to the voltage control loop.
UCC256302 monitors the half-bridge switched node to determine the required dead-time in the gate signals for
the outgoing and incoming power switches. In this way the dead-time is automatically adjusted to provide
optimum efficiency and security of operation. UCC256302includes an algorithm for adaptive dead-time that
makes its operation inherently robust compared with alternative parts.
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Overview (continued)
UCC256302 includes high and low-side drivers that can directly drive LLC power stage delivering up to 1-kW
peak/500-W continuous power. This allows complete and fully featured power systems to be realized with
minimum component count.
An integrated high voltage JFET allows the power system to be regulating its output voltage within one second of
the mains voltage appearing at the input of the PFC stage. UCC256302 provides start-up power for both the LLC
and PFC stages. Once operating, the JFET is switched OFF to limit power dissipation in the package and reduce
standby power consumption.
At low output power levels UCC256302 automatically transitions into light-load burst mode. The LLC equivalent
load current level during the burst on period is a programmable value. The space period between bursts is
terminated by the secondary voltage regulator loop based on the FB pin voltage. During burst mode, the
resonant capacitor voltage is monitored so that the first and last burst pulse widths are fully optimized for best
efficiency. This method allows UCC256302 to achieve higher light-load efficiency and reduced no-load power
compared with alternative parts.
In addition, UCC256302 enables the opto-coupler to operate at a low power mode, which can save up to 20 mW
at standby mode comparing with conventional solution.
Additional protection features of UCC256302 include three-level over current protection, output over voltage
protection, input voltage OVP and UVP, gate driver UVLO protection, and over temperature protection.
The key features of UCC256302 can be summarized as follows:
•
•
•
•
•
•
Integrated high voltage start up and high voltage gate driver
Hybrid Hysteretic Control helps achieve best in class load and line transient response
Optimized light load burst mode enables 150-mW standby power design
Improved capacitive region operation prevention scheme
Adaptive dead time
Wide operating frequency range (35 kHz ~ 1 MHz)
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6.2 Functional Block Diagram
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6.3 Feature Description
6.3.1 Hybrid Hysteretic Control
UCC256302 uses a novel control scheme – Hybrid Hysteretic Control (HHC) - to achieve best in class line and
load transient performance. The control method makes the compensator very easy to design. The control
method also makes light load management easier and more efficient. Improved line transient enables lower bulk
capacitor/output capacitor value and saves system cost.
HHC is a control method which combines traditional frequency control and charge control – It is charge control
with added frequency compensation ramp. Comparing with traditional frequency control, it changes the power
stage transfer function from a 2nd order system to a 1st order system, so that it is very easy to compensate. The
control effort is directly related to input current, so the line and load transients are best in class. Comparing with
charge control, the hybrid hysteretic control avoids unstable condition by adding in a frequency compensation
ramp. The frequency compensation makes the system always stable, and makes the output impedance lower as
well. Lower output impedance makes the transient performance better than charge control.
In summary, the problems solved by HHC are:
•
•
Help LLC converters achieve best in class load transient and line transient
Changes the small-signal transfer function to a 1st order system which is very easy to compensate, and can
achieve very high bandwidth
•
•
Inherently stable via frequency compensation
Makes burst mode control high efficiency optimization much easier
Figure 26 shows the HHC implementation in UCC25630: a capacitor divider (C1 and C2) and two well matched
controlled current source.
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Figure 26. UCC256302 HHC Implementation
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Feature Description (continued)
The resonant capacitor voltage is divided down by the capacitor divider formed by C1 and C2. The current
sources are controlled by the gate drive signals. When high side switch is on, turn on the upper current source to
inject a constant current into the capacitor divider; when low side switch is on, turn on the lower current source to
pull the same amount of constant current outside of the capacitor divider. The two current sources add a
triangular compensation ramp to the VCR node. The current sources are supplied by a reference voltage Vref. This
voltage needs to be equal to or larger than twice of the common mode voltage VCM. The divided resonant
capacitor voltage and the compensation ramp voltage are then added together to get VCR node voltage. If the
frequency compensation ramp dominates, the VCR node voltage will look like a triangular waveform, and the
control will be similar to direct frequency control. If the resonant capacitor voltage dominates, the shape of the
VCR node voltage will look like the actual resonant capacitor voltage, and the control will be similar to charge
control. This is why the control method is called “hybrid” and the compensation ramp is called frequency
compensation.
This set up has an inherent negative feedback to keep the high side and low side on time balanced, and also
keep the common mode voltage at VCR node at VCM
.
There are two input signals needed for the new control scheme: VCR and VCOMP. VCR is the sum of the scaled
down version of the resonant capacitor voltage and the frequency compensation ramp. VCOMP is the voltage loop
compensator output. The waveform below shows how the high-side and low-side switches are controlled based
on VCR and VCOMP. The common mode voltage of VCR is VCM.
High-Side Gate
T/2
Low-Side Gate
ûVCR‘
VTH
ûVCR
VTL
t3
t1
t4
t2
Figure 27. HHC Gate On/Off Control Principle
Based on VCOMP and VCM (3 V), two thresholds: Vthh and Vthl are created.
Vcomp
Vthh = VCM +
2
(1)
(2)
Vcomp
Vthh = VCM -
2
The VCR voltage is compared with the two thresholds. When VCR > Vthh, turn off high side switch; when VCR <
Vthl, turn off low side switch. HO and LO turn on edges are controlled by adaptive dead time circuit.
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Feature Description (continued)
6.3.2 Regulated 12-V Supply
RVCC pin is the regulated 12-V supply which can supply up to 100-mA current. The regulated rail is used to
supply the PFC, and LLC gate driver. RVCC has under voltage lock out (UVLO) function. If during normal
operation, RVCC voltage is less than RVCCUVLO threshold. It is treated as a fauDevice Functional Modeslt and
the system will enter FAULT state. Details about the FAULT handling will be discussed in the section.
6.3.3 Feedback Chain
Control of output voltage is provided by a voltage regulator circuit located on the secondary side of the isolation
barrier. The demand signal from the secondary regulator circuit is transferred across the isolation barrier using
an opto-coupler and is fed into the FB pin on UCC25630. This section discusses about the whole feedback
chain.
The feedback chain has the following functions:
•
•
•
•
•
Optocoupler feedback signal input and bias
System external shut down
Soft start function selection by a pick lower block
Burst mode selection by a pick higher block
Convert single ended feedback demand to two thresholds Vthh and Vthl; and VCR comparison with the
thresholds and the common mode voltage VCM
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Figure 28. Feedback Chain Block Diagram
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Feature Description (continued)
The timing diagram below shows the FB chain waveforms. The sequence is normal soft start followed by a ZCS
event, and load step into burst mode, and then come out of burst mode.
C.replica
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Figure 29. Feedback Chain Timing Diagram
6.3.4 Optocoupler Feedback Signal Input and Bias
The secondary regulator circuit and optocoupler feedback circuit all add directly to the no load power consumed
by the system. To achieve very low no load power it is necessary to drive the optocoupler in a low current mode.
As shown in Figure 29, a constant current source IFB is generated out of VCC voltage and connected to FB pin.
A resistor RFB is also connected to this current source with a PMOS in series. During normal operation, the
PMOS is always on. The PMOS limits the maximum voltage on the FBreplica.
IFB = Iopto +IRFB
(3)
From this equation, when Iopto increases, IRFB will decrease, making FBreplica decrease. In this way, the control
effort is inverted. This circuit can also limit the optocoupler maximum current to be IFB. A conventional way to
bias the optocoupler is using a pull up resistor on the collector of the optocoupler output. To reduce the power
consumption, the pull up resistor needs to be big, which will limit the loop bandwidth. For the bias current method
used in UCC25630, the optocoupler current is limited and there is no loop bandwidth issue.
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Feature Description (continued)
6.3.5 System External Shut Down
This function provides a way to shut down the system by an external signal. When the FBreplica is less than the
burst mode threshold, stop LLC switching. When FBLessThanBMT is true for more than 200 ms, go to JFET
OFF state and try to re-start. Before LLC starts switching, the system has to make sure that FBLessThanBMT is
not true. If FBreplica is constantly held low by an external signal, the system will not start again.
This function can be used for system on/off control or any other fault shut down which isn’t included in
UCC25630. To implement this function, an external biased optocoupler is needed. The schematic below is an
example of such implementation.
Figure 30. External Disable Example Circuit
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Feature Description (continued)
6.3.6 Pick Lower Block and Soft Start Multiplexer
This part of the circuit consists of 3 elements:
•
•
•
A pick lower block
A MUX which selects AVDD or SS signal as the second input to the pick lower block
A SS control block which handles the charge and discharge of the SS capacitor in cause of a ZCS fault
The pick lower block has two inputs. The first input is FBreplica. The second input is selected between AVDD
and SS pin voltage. The other output of the block is the lower of the two inputs.
The MUX selects between SS and AVDD. The selection is based on SSEnd (soft start end) signal, which is an
output of the SS Ctrl block. SSEnd is high when SS is higher than FBreplica, and soft start process has been
initiated by the state machine, and there is no ZCS condition. Switching to AVDD after soft start has ended helps
make sure that during non-soft start or non-ZCS fault condition, FBreplica signal is always sent through the pick
lower block. It also releases the SS pin to do the other function – light load threshold programming.
The SS control block handles the charge and discharge of the SS capacitor in cause of a ZCS fault. It reset the
SSEnd signal when ZCS happens, so the effect of pulling down on SS pin to increase the switching frequency
can pass through the pick lower block. The relationship of the SS control block inputs and outputs is the
following:
SSEnd = SSEn & !ZCS & (!FBLessThanSS)
(4)
(5)
ChargeSS = SSEn & !SSEnd & !ZCS
6.3.7 Pick Higher Block and Burst Mode Multiplexer
The output of the pick lower block goes into a pick higher block, which selects the higher of the pick lower block
output and the burst mode threshold setting.
The burst mode multiplexer selects between BMT and ground. During soft start, the multiplexer selects ground.
The startup process is open loop and controlled by the soft start ramp. Burst mode is not enabled during soft
start phase.
After soft start, the higher of the two inputs are sent to the differential amplifier. The other output is a comparator
output FBLessThanBMT. It is sent to the waveform generator state machine to control burst mode and system
external shut down.
6.3.8 VCR Comparators
The output of the pick higher block is sent to a differential amplifier to convert the signal to two thresholds
symmetrical to Vcm. The difference between the two thresholds Vthh and Vthl equals the input amplitude. The
VCR pin voltage is then compared with Vthh, Vthl, and Vcm. The results are sent to the waveform generator.
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Feature Description (continued)
6.3.9 Resonant Capacitor Voltage Sensing
The resonant capacitor voltage sense pin senses the resonant capacitor voltage through a capacitor divider.
Inside the device, two well matched, controlled current sources are connected to VCR pin to generate the
frequency compensation ramp. The on/off control signals in of the two current sources come from the waveform
generator block.
During waveform generator IDLE state or before startup, short VCR node to Vcm. This action will help reduce the
startup peak current, and help VCR voltage to settle down quickly during burst mode.
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7
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Figure 31. VCR Block Diagram
The ramp current on/off sequence is shown in Figure 32. The ramp current is on all the time. It changes direction
at the falling edge of high side on or low side on signal.
HSON
LSON
2 mA
Compensation ramp
0
current
-2 mA
Figure 32. VCR Compensation Ramp Current On/Off
On VCR pin, a capacitor divider is used to mix the resonant capacitor waveform and the compensation ramp
waveform. Adjusting the size of the external capacitors can change the contribution of charge control and direct
frequency control. Assume the divided down version of the resonant capacitor voltage by the capacitor divider is
Vdiv, the compensation ramp current resulted voltage on VCR pin is Vramp. If Vdiv is much larger than Vramp, the
control method is similar to charge control, in which the control effort is proportional to the input charge of one
switching cycle. If Vramp is much larger than Vdiv, the control method is similar to direct frequency control, in which
the control effort is proportional to the switching frequency. The most optimal transient response can be achieved
by adjusting the ratio between Vdiv and Vramp
.
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Feature Description (continued)
6.3.10 Resonant Current Sensing
The ISNS pin is connected to the resonant capacitor using a high voltage capacitor. The capacitor CISNS and
the resistor RISNS form a differentiator. The resonant capacitor voltage is differentiated to get the resonant
current. The differentiated signal is AC and goes both positive and negative. In order to sense the zero crossing,
the signal is level shifted using an op amp adder. IPolarity comparator detects the direction of the resonant
current. The digital state machine implements a blanking time on IPolarity – IPolarity edges during the first 400ns
of dead time are ignored.
OCP2 and OCP3 thresholds are based on average input current. To get the average input current, the
differentiator output is multiplexed with the high side switch on signal HSON: when HS is on, the MUX output is
the differentiator output; when HS is off, the MUX output is 0. The MUX output is then averaged using a low pass
filter. The output of the filter is the sensed average input current. Note that the MUX needs to pass through both
positive and negative voltages. OCP2 and OCP3 faults have a 2ms and 50ms timer respectively. Only when the
OCP2/OCP3 comparators output high for continuous 2ms or 50ms, the faults will be activated.
OCP1 threshold is set on the peak resonant current. The voltage on the ISNS pin gets compared to OCP1
threshold OCP1Th directly. The peak resonant current is checked once per cycle on the positive half cycle.
OCP1 fault is only activated when there are 4 consecutive cycles of OCP1 event detected. During start up, the
OCP1 comparator output of the first 15 cycles are ignored.
ë/ꢂ
+
+
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-
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Figure 33. ISNS Block Diagram
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Feature Description (continued)
6.3.11 Bulk Voltage Sensing
The BLK pin is used to sense the LLC DC input voltage (bulk voltage) level. The comparators on BLK pin set the
following thresholds:
•
•
•
•
Bulk voltage level when LLC starts switching – BLKStartTh
Bulk voltage level when LLC stops switching – BLKStopTh
Bulk voltage level when bulk over voltage fault is generated – BLKOVRiseTh
Bulk voltage level when bulk over voltage fault is cleared – BLKOVFallTh
BLKOV signal is generated by one comparator with two thresholds selected by a MUX. This is to create
necessary hysteresis for the BLKOV fault. The BLKSns signal is buffered and sent to burst mode threshold
generation block to implement the adaptive burst mode threshold.
Figure 34 shows the block diagram of the BLK pin.
BLK
4
+
.[Y{tart
.[Y{tartÇꢀ
.[Y{topÇꢀ
-
+
-
.[Y{top
+
-
.[Yhë
.[YhëwiseÇꢀ
.[YhëCallÇꢀ
ꢁÜó
.[Y{ns
Figure 34. VCR Compensation Ramp Current On/Off
PFC start
switching
AC plug in
BLKOVRiseTh
BLKOVFallTh
BLKStartTh
PFC output voltage
RVCC
LLC gate drive
waveforms
1s
FAULT
timer
Figure 35. Timing Diagram of BLK Operations
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Feature Description (continued)
6.3.12 Output Voltage Sensing
The output voltage is sensed through the bias winding (BW) voltage sense pin. The sensed output voltage is
compared with a fixed threshold to generate output OVP fault. The block diagram of the bias winding voltage
sense block is shown below.
BW
8
-
teak
deꢁecꢁ
{/I
+
-
+
hët
hëtÇꢀ
Figure 36. Bias Winding Sensing Block Diagram
The bias winding sense block consists of an inverting op amp to flip the BW signal. The flipped BW signal is then
peak detected and sampled at low side turn off edge. The sampled voltage represents the output voltage during
this cycle. The S/H output is them compared with OVP comparator. Shown below is the timing diagram of the
BW sense block.
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hutput
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[{hb
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Figure 37. Timing Diagram of BW Sense Block
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Feature Description (continued)
6.3.13 High Voltage Gate Driver
The low-side gate driver output is LO. The gate driver is supplied by the 12-V RVCC rail.
The high-side driver module consists of three physical device pins. HB and HS form the positive and negative
rails, respectively, of the high-side driver, and HO connects to the gate of the upper half-bridge MOSFET.
During periods when the lower half-bridge MOSFET is conducting, HS is shorted to GND via the conducting
lower MOSFET. At this time power for the high side driver is obtained from RVCC via high voltage diode
DBOOT, and capacitor CBOOT is charged to RVCC minis the forward drop on the diode.
During periods when the upper half-bridge MOSFET is conducting, HS is connected the LLC input voltage rail. At
this time the HV diode is reverse biased and the high side driver is powered by charge stored in CBOOT.
The slew on HS pin is detected for adaptive dead time adjustment. The next gate is only turned on when the
slew on HS pin is finished.
Both the high-side and low side gate drivers have under voltage lock out (UVLO) protection. The low side gate
driver UVLO is implemented on RVCC; the high side gate driver UVLO is implemented on (HB - HS) voltage.
When operating at light load, UCC256302 enters burst mode. During the burst off period, the gate driver enters
low power mode to reduce power consumption.
The block diagram of the gate driver is shown in Figure 38.
To RVCC
Vbus
!ctiveꢁ[ow
ꢂower
íaveDen9n
íake Üp
/ontrol
HB
HO
HS
14
15
16
{lew5one_I
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5ead Çime
[evel
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I{hb
Iigꢀ ëoltage
Lsolation
LO
[{hb
10
Figure 38. Gate Driver Block Diagram
26
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Feature Description (continued)
6.3.14 Protections
6.3.14.1 ZCS Region Prevention
Capacitive region is an LLC operation region in which the voltage gain increases when the switching frequency
increases. It is also called ZCS region. Capacitive mode operation should be avoided for two reasons:
•
•
The feedback loop becomes positive feedback in capacitive region
The MOSFET may be damaged because of body diode reverse recovery
To make sure that capacitive region operation does not happen, we need to first rely on the slew done signal. If
there is a slew done signal detected, it suggests that the opposite body diode must not be conducting and to turn
on the next FET. If there is no slew detected, IPolarity signal is used. The next gate will be turned on at the next
IPolarity flip event. The IPolarity flip indicates that the capacitive operation cycle has already passed. The
resonant current reverses the direction and begins to discharge the switch node. When the capacitive operation
cycle has passed, the system enters a high frequency oscillation stage, where the oscillation frequency is
determined by the parasitic elements in the circuit. In this stage, the body diode is no longer conducting and it is
allowed to turn on the next gate.
However, in the high frequency oscillation stage, the resonant current may be so small that the IPolarity detection
is missed. In this case, the next gate will be turned on by maximum dead time timer expiration.
In addition to preventing the next gate from turning on when the opposite body diode is conducting, the switching
frequency is forced to ramp up until there is a cycle with no capacitive region operation detected
The capacitive region detection is done by checking the resonant current polarity at HSON or LSON falling edge.
If the resonant current is positive at LSON falling edge, or negative at HSON falling edge, the ZCS signal in the
waveform generator is turned high. The ZCS signal keeps high until there is a half cycle without capacitive region
operation happens.
The force ramping up of the switching frequency is done by pull the SS pin down by a resistor to ground. Details
will be discussed in SS pin section.
Below is the flow chart of capacitive region prevention algorithm:
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Feature Description (continued)
Start
ZCS = 1, pull down
SS pin
Slew done detected brefore
Ipolarity blanking expires?
Yes
Yes
ZCS event detected at HSON or
No
LSON turn off edge?
Yes
Ipolarity flip detected?
Turn on the next gate
No
ZCS = 0
No
Yes
Maximum dead time expired?
Figure 39. Gate Driver Block Diagram
bexꢀ {wiꢀch
Çurn ꢂn is
5elayed
I{
[{
ù/{
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ꢁesonanꢀ
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bo {lope Ünꢀil
/urrenꢀ
.ecomes
trimary {ide
{wiꢀch bode
begaꢀive
ꢀ
ë/ꢂꢃt ꢁamps 5own
Ünꢀil bo ù/{
Figure 40. Timing Diagram of a ZCS Event
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Feature Description (continued)
6.3.14.2 Over Current Protection (OCP)
There are three levels of OCP:
1. OCP1: peak current protection (highest threshold)
1. Fault action: count OCP1 cycles and shut down power stage if counter exceeds preset value
2. OCP2: average input current protection (high threshold)
1. Fault action: if above threshold for 2 ms, shut down
3. OCP3: average input current protection (low threshold)
1. Fault action: if above threshold for 50 ms, shut down
The circuit block diagram has been discussed in the Resonant Current Sensing section.
6.3.14.3 Over Output Voltage Protection (VOUTOVP)
This is the output over voltage protection. VOUTOVP threshold is set on the bias winding voltage sense. The
VOUTOVP trip point can be set by configuring the voltage divider on BW pin.
6.3.14.4 Over Input Voltage Protection (VINOVP)
This is the input over voltage protection. The fault actions have been discussed in the BLK section. The trip point
can be set by configuring the voltage divider on BLK pin.
6.3.14.5 Under Input Voltage Protection (VINUVP)
This is the input under voltage protection. The fault actions have been discussed in the BLK section. The trip
point can be set by configuring the voltage divider on BLK pin.
6.3.14.6 Boot UVLO
This is the high side gate driver UVLO. When (HB – HS) voltage is less than the threshold, the high side gate
output will be shut down.
6.3.14.7 RVCC UVLO
This is the regulated 12-V UVLO. When RVCC voltage is less than the threshold, both the high side gate output
and the low-side gate output will be turned off.
6.3.14.8 Over Temperature Protection (OTP)
This is the device over temperature protection. When OTP fault is tripped, if the device is switching, the switching
will stop. If the device is in HV start up stage and JFET is on, the JFET will be turned off. Details of the OTP fault
handling will be discussed in the Device Functional Modes section.
There are two digital state machines in the system:
•
•
System States and Faults State Machine
Waveform Generator Stage Machine
The system states control state machine controls system operation states and faults. The waveform generator
state machine controls the gate driver behavior.
6.4 Device Functional Modes
6.4.1 Burst Mode Control
The efficiency of an LLC converter power stage drops rapidly with falling output power. To maintain reasonable
light load efficiency it is necessary to operate the LLC converter in burst mode. In this mode the LLC converter
operates at relatively high power for a short burst period and then all switching is stopped for a space period.
During the Burst period excess charge is transferred to and stored in the output capacitor. During the Space
period this stored charge is used to supply the load current. Providing an effective light-load scheme is a
particular problem for an LLC controller that is located on the primary side of the isolation barrier. This is because
the feedback demand signal (VCOMP) is mainly a function of input/output voltage ratio and only loosely related to
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Device Functional Modes (continued)
load current. The normal method of placing a couple of thresholds in the VCOMP voltage window to switch OFF
and ON the LLC converter does not work effectively. Another issue with the conventional method is that when
burst on, the switching pulses are determined by VCOMP, which is usually at initial burst on, and decays as the
output voltage rises. The resulting inductor current will be big at first and then decays. This is not optimal
because the big current at first may create mechanical vibration. The high switching frequency afterwards may
cause two much switching loss.
For an advanced burst mode, the following features are desired:
•
•
The power delivered by each burst should be relatively constant for a certain load.
The Burst power is set high enough to provide reasonable LLC converter efficiency and low enough to avoid
acoustic noise and excessive output voltage ripple.
•
•
•
•
•
When burst on, the average capacitor voltage should settle to VIN/2 as fast as possible for best efficiency.
The switching frequency or burst power level of each burst pulse should be optimized for efficient operation.
The burst pattern of each burst should be relatively constant.
There should be no audible noise.
Burst mode performance should be consistent across input voltage range.
The HHC method makes the control of the burst mode very straight forward. The block diagram is a functionally
accurate description of the burst mode control method in UCC25630.
FB less than burst
mode threshold
tick
higher
value
/ꢂꢀt
/ꢂꢀt_new
ꢀÜó
{{9nd
.ursꢁ mode
ꢁhreshold
Figure 41. Burst Mode Control Block Diagram
The control effort is selected between the higher of the two signals: 1) the voltage loop compensator output
(VCOMP) or 2) the Burst Mode Threshold level (BMT). When VCOMP goes below BMT, continue switching for a
fixed number of switching cycles, then stop. Always switch while COMP is higher than BMT. If soft start isn’t
done yet, send the COMP (controlled by soft start ramp). BMT is programmable and adaptively changed with
input voltage. The last pulse of each burst on period is turned off when the resonant capacitor voltage equals
VIN/2. In HHC method, this is approximately equivalent to VCR node voltage equals the common mode voltage
VCM. This operation keeps the resonant capacitor voltage to about VIN/2 for each burst off period, thus enabling
the burst pattern to settle as soon as possible during burst on period.
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Device Functional Modes (continued)
6.4.2 High Voltage Start-Up
UCC256302 uses a self bias start up scheme, thus eliminating the need of a separate auxiliary flyback power
stage. When AC is first plugged in, PFC and LLC are both off. HV pin JFET will be enabled and will start to
deliver current from a source connected to the HV pin to the VCC capacitor. Once the VCC pin voltage exceeds
its VCCStartSwitching threshold, the current source will be turned off and RVCC will be enabled to turn on the
PFC. When PFC output voltage reaches a certain level, LLC is turned on. When LLC is operating and the output
voltage is established, the bias winding will supply current for both the PFC and the LLC controller devices.
6.4.3 Soft-Start and Burst-Mode Threshold
The soft-start programming and burst mode threshold programming are multiplexed on one pin – LL/SS. In
addition, when ZCS region operation happens, this pin is pulled down to ground through a resistor to increase
the switching frequency.
An internal constant current source charges the soft start capacitor to generate the soft-start command. Soft start
period starts right after charge boot stage is done, and ends when FBreplica becomes lower than SS pin voltage.
After soft start is done, the SS voltage is replaced by AVDD to send to the FB chain. The LL/SS pin is then used
to generate the burst mode threshold. In UCC256302 we try to maintain the same burst mode power level over
the input voltage range. This is done by adaptively changing the burst mode threshold with sensed BLK voltage.
The programming resistors output provide two degrees of freedom, to set the burst mode threshold, as well as
how the threshold changes with BLK voltage. When programmed correctly, the power stage will always enter
burst mode at a certain output current level, making the system much easier to optimize.
!ë55
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/harge{{
LL/SS
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9
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Figure 42. LL/SS Block Diagram
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Device Functional Modes (continued)
6.4.4 System States and Faults State Machine
Below is an overview of the system states sequence:
The state transition diagram starts from the un-powered condition of UCC25630. As soon as the system is
plugged in, HV pin JFET will be enabled and will start to deliver current from a source connected to the HV pin to
the VCC capacitor. Once the VCC pin voltage exceeds its VCCStartSwitching threshold, system state will
change to JFETOFF. When PFC output voltage reaches a certain level, LLC is turned on. Before LLC starts
running, the LO pin is kept high to pull the HS node of the LLC bridge low, thus allowing the capacitor between
HB and HS pins to be charged from VCC via the bootstrap diode. UCC256302 will remain in the
CHARGE_BOOT state for a certain time to ensure the boot capacitor is fully charged. When LLC output voltage
reaches a certain level, both PFC and LLC gets power from LLC transformer bias winding. When the load drops
to below a certain level, LLC operates in burst mode
Fault conditions encountered by UCC256302 will cause operation to stop, or paused for a certain period of time
followed by an automatic re-start. It is to ensure that while a persistent fault condition is present, it is not possible
for UCC256302 or the power converter temperature to continue to rise as a result of the repeated re-start
attempts.
Figure 43. Block Diagram of System States and Faults State Machine
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Device Functional Modes (continued)
Table 1 summarizes the inputs and outputs of Figure 43
Table 1. System States and Faults State Machine Block Inputs and Outputs
SIGNAL NAME
I/O
DESCRIPTION
OVP
OTP
I
I
I
I
I
I
I
I
I
I
Output over voltage fault
Over temperature fault
Peak current fault
OCP1
OCP2
Average current fault with 2ms timer
Average current fault with 50ms timer
Bulk voltage is above start threshold
Bulk voltage is below stop threshold
Bulk over voltage fault
OCP3
BLKStart
BLKStop
BLKOV
RVCCUVLO
VCCReStartJfet
RVCC UVLO fault
VCC is below restart threshold
VCC is above start switching threshold (the threshold is different in self bias mode
and external bias mode)
VCCStartSwitching
I
FBLessThanBMT
WaveGenEn
RVCCEn
I
FBReplica voltage is less than burst mode threshold
Waveform generator enable
RVCC enable
O
O
O
O
SSEn
Soft start enable
HVFetOn
Turn on or off JFET
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The state machine is shown in Figure 44 and the description of the states and state transition conditions are in
the tables below.
AC plug in
22
STARTUP
1
21
1
JFETON
2
12
20
JFETOFF
3
23
15
19
11
WAKEUP
4
FAULT
14
18
10
9
CHARGE_BOOT
5
17
16
STEADY_STATE_RUN
6
7
13
8
LIGHT_LOAD_RUN
Figure 44. System States and Faults State Machine
34
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Table 2. States in System States and Faults State Machine
STATE
OUTPUT STATUS
DESCRIPTION
WaveGenEn = 0
RVCCEn = 0
SSEn = 0
This is the first state after power on reset (POR). In this state, the HV JEFT is on,
and it’s working in a voltage clamp state where the VCC voltage is regulated to
13V to allow internal circuits to load trim settings and start up.
STARTUP
JFETON
HVFetOn = 1
WaveGenEn = 0
RVCCEn = 0
SSEn = 0
In this state, the JFET is on. HV start up current is regulated to IHVHigh.
HVFetOn = 1
WaveGenEn = 0
RVCCEn = 1
SSEn = 0
When VCC is higher than VCCStartSwitching threshold, the JFET is turned off and
system enters JFETOFF state. The regulated RVCC is turned on. PFC soft start
begins.
JFETOFF
HVFetOn = 0
WaveGenEn = 0
RVCCEn = 1
SSEn = 0
When BLK voltage reaches BLKStart level, the system enters WAKEUP state and
stay in WAKEUP state for 150us for the analog circuits to wake up.
WAKEUP
HVFetOn = 0
WaveGenEn = 0
RVCCEn = 1
SSEn = 0
In this state, the BOOT capacitor is charged by turning on the low side switch for a
certain period of time.
CHARGE_BOOT
STEADY_STATE_RUN
LIGHT_LOAD_RUN
FAULT
HVFetOn = 0
WaveGenEn = 1
RVCCEn = 1
SSEn = 1
In this state, the waveform generator is enabled. Soft start module is enabled. LLC
starts to soft start. When soft start is done, the system enters normal operation.
HVFetOn = 0
WaveGenEn = 1
RVCCEn = 1
SSEn = 1
If FBReplica is less than burst mode threshold during normal operation, the system
enters LIGHT_LOAD_RUN mode. The FBLessThanBMT time is counted. If the
time is longer than 200ms, it is treated as a fault, restart the system.
HVFetOn = 0
WaveGenEn = 0
RVCCEn = 0
SSEn = 0
After any fault condition, the system enters FAULT state and waits for 1s before re-
start. The 1s timer allows system to cool down and prevents frequent repetitive
start up in case of a persistent fault.
HVFetOn = 0
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Table 3. System States and Faults State Machine State Transition Conditions
STATE TRANSITION
CONDITION
DESCRIPTION
1
System ready (trim load done)
VCCStartSwitching = 1
VCCReStartJfet = 0
2
BLKStart = 1
BLKStop = 0
BLKOV = 0
3
4
RVCCUVLO = 0
BLKStart = 1
BLKStop = 0
BLKOV = 0
RVCCUVLO = 0
FBLessThanBMT = 0
5
6
Charge boot done
FBLessThanBMT = 1
FBLessThanBMT = 0
VCCReStartJfet = 1
VCCReStartJfet = 1
VCCReStartJfet = 1
VCCReStartJfet = 1
VCCReStartJfet = 1
FBLessThanBMT time out
BLKOV = 1
7
8
9
10
11
12
13
14
15
BLKOV = 1
OTP = 1 or BLKOV = 1 or
16
17
BLKStop = 1 or OVP or OCP1 or OCP2 time out or
OCP3 time out or RVCCUVLO = 1
OTP = 1 or BLKOV = 1 or
BLKStop = 1 or OVP or OCP1 or OCP2 time out or
OCP3 time out or RVCCUVLO = 1
18
19
20
21
22
23
OTP = 1
OTP = 1
OTP = 1
OTP = 1
OTP = 1
1s pause time out
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Figure 45 only shows the most commonly used state transition (assuming no faults during start up states so all
the states are captured in the timing diagram). Many different ways of state transitions may happen according to
the state machine, but are not captured in this section.
In Figure 45, a normal start up procedure is shown. The system enters normal operation and then a fault (OCP,
OVP, or OTP) happens.
NOTE
OCP1 and OVP are fast faults and are first processed in the waveform generator state
machine.
The system is configured to be restart after 1s pause time.
AC plug in
VCCStartSwitching
VCC
VCCReStartJfet
VCCShort
PFC output voltage
RVCC
LLC output voltage
LLC gate drive
waveforms
STEADY_STATE_RUN
STARTUP
JFETON
JFETOFF
STEADY_STATE_RUN
FAULT JFETON JFETOFF
System state
WAKEUP CHARGE_BOOT
WAKEUP CHARGE_BOOT
Figure 45. Timing Diagram of System States and Faults
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6.4.5 Waveform Generator State Machine
The waveform generator module consists of a state machine that implements hybrid hysteretic control, adaptive
dead time, and ZCS protection. Each cycle of LLC operation is broken down into 4 separate periods: HSON,
DTHL, LSON, and DTLH. In addition, there is an IDLE state and a WAKEUP state.
The initial state of this state machine is IDLE. In IDLE state, the system is operating in a low power mode. When
WaveGenEn command is received, the state machine enters WAKEUP state to turn on various circuit blocks.
Once the WAKEUP timer is expired, the system enters LSON (low side on) state. LSON state is followed by
DTLH (dead time high to low) state, which is the dead time state. After DTLH state, the high side turns on and
system enters HSON. HSON state is followed by DTHL (dead time low to high) state. After DTHL, the system
goes back to LSON state again.
There are minimum and maximum timers in each of the states. The state transition conditions and descriptions
are discussed in detail below.
Lꢀolarity
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íaveform generator
ëcrIigꢂerÇꢂanëtꢂꢂ
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Figure 46. Waveform Generator State Machine Block Diagram
Table 4 summarizes the inputs and outputs of the Waveform Generator State Machine Block Diagram
NOTE
OVP and OCP1 faults are not listed here. But they are processed in the wave gen state
machine before handled to system states and faults state machine.
Table 4. Waveform Generator State Machine Inputs and Outputs
SIGNAL NAME
IPolarity
I/O
DESCRIPTION
I
Polarity of the resonant current (Note: this signal has a 1us blanking time during
dead time. IPolarity signal listed here is after blanking. See ISNS section for
details.)
SlewDone_H
SlewDone_L
VcrHigherThanVthh
VcrLowerThanVthl
VcrHighThanVcm
WaveGenEn
ZCS
I
I
Primary side switch node completes slewing from low to high
Primary side switch node completes slewing from high to low
VCR voltage is higher than the high threshold Vthh
VCR voltage is lower than the low threshold Vthl
VCR voltage is high than the common mode voltage Vcm
Waveform generator enable
I
I
I
I
O
O
O
O
O
Zero current switching is detected
HSON
High side gate driver on
LSON
Low side gate driver on
HSRampOn
LSRampOn
High side compensation current ramp on
Low side compensation current ramp on
38
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The state machine is shown in Figure 47 and the description of the states and state transition conditions are in
Table 5.
LSON
2
6
3
8
WakeUp
7
1
DTHL
11
9
IDLE
DTLH
Power on reset
10
5
4
HSON
Figure 47. Waveform Generator State Machine
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Table 5. States in Waveform Generator State Machine
STATE
OUTPUT STATUS
DESCRIPTION
HSON = 0
LSON = 0
HSRampOn = 0
LSRampOn = 0
ZCS = 0
Both high side and low side are off in this state. Various circuits are operating in
low power mode. This is the first state after POR. During burst off period, the
system is in IDLE state as well. Upon entering IDLE state, load burst cycle counter,
switching cycle counter, OCP1 counter, and OVP counter. Load startup cycle
counter if WaveGenEn_Rising = 1
IDLE
WakeUp
HSON = 0
In this state, internal circuits wake up from low power mode.
LSON = 0
HSRampOn = 0
LSRampOn = 0
ZCS = 0
LSON
DTLH
HSON
DTHL
HSON = 0
LSON = 1
HSRampOn = 0
LSRampOn = 1
ZCS = 0 or 1
In this state, the low side gate turns on; the low side ramp current source turns on.
ZCS may be 0 or 1 depends on the detected result. More details will be described
in ZCS section. Enable low side on timer.
HSON = 0
LSON = 0
HSRampOn = 1
LSRampOn = 0
ZCS = 0 or 1
Dead time from low side on to high side on. Low side ramp current source turns
off. High side ramp current source turns on. Enable dead time timer.
HSON = 1
LSON = 0
HSRampOn = 1
LSRampOn = 0
ZCS = 0 or 1
In this state, the high side gate turns on; the high side ramp current source turns
on. ZCS may be 0 or 1 depends on the detected result. More details will be
described in ZCS section. Enable high side on timer.
HSON = 0
LSON = 0
Dead time from high side on to low side on. High side ramp current source turns
off. Low side ramp current source turns on. Enable dead time timer.
HSRampOn = 0
LSRampOn = 1
ZCS = 0 or 1
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Table 6. Waveform Generator State Machine State Transition Conditions
STATE TRANSITION
DESCRIPTION
CONDITION
1
2
3
4
WaveGenEn = 1 and FBLessThanBMT = 0 and minimum IDLE time expired
Wake up time expired
(VcrLowerThanVthl = 1 or LSON max timer expired) and LSON min timer expired
StartUpCounterExpired = 0 and DTStartUpTimerExpired = 1
DTMaxTimerExpired = 1
SlewDone_H = 1
SlewDone_H = 1 and MeasuredDTExpired = 1; (Note: this condition and the condition above is
selectable using a trim bit, depending on whether dead time measure and match feature is wanted)
IPolarityFallingEdgeDetected = 1
5
6
(VcrHigherThanVthh = 1 or HSON max timer expired) and HSON min timer expired
StartUpCounterExpired = 0 and DTStartUpTimerExpired = 1
DTMaxTimerExpired = 1
SlewDone_L = 1
IPolarityFallingEdgeDetected = 1
7
8
WaveGenEn = 0
WaveGenEn = 0
(VcrLowerThanVthl = 1 or LSON max timer expired) and LSON min timer expired and (OCP1 counter
expire or OVP counter expire)
9
WaveGenEn = 0
10
WaveGenEn = 0
BurstModeCountExpire = 1 and VcrHigherThanVcm = 1 and FBLessThanBMT = 1 and HSON min time
expired
11
WaveGenEn = 0
Table 7. Waveform Generator State Machine Internal Counters and Timers
INTERNAL VARIABLE
DESCRIPTION
Switching cycle counter
OVP counter
This counter counts the switching cycle
Bias Winding Overvoltage counter. The counter decrements every time a Bias Winding Overvoltage
occurs
Startup counter
Startup Counter. Counter gets set to 15 when wave generator enable toggles from low to high, and then
decrements every switching cycle. When the count hits 0, the dead time state is no longer permitted to
be exited via the startup dead time expiration.
Burst cycle counter
OCP1 counter
Burst counter. Counter gets set to 15 and then decrements every switching cycle until it hits ‘0’. If
FBLessThanBMT = 1 when the counter is ‘0’, the switcher will stop until FBLessThanBMT = 0.
OCP1 counter. Counter gets set to 4 and then decrements every switching cycle when OCP1 occurs,
until it hits ‘0’
Wakeup timer
Wakeup state timer
DT max timer
Maximum dead time timer
Startup dead time max timer
Gate on min timer
Gate on max timer
Dead time max clamp for the first few start up cycles before the startup counter expires
Minimum gate on time timer
Maximum gate on time timer
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7 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
7.1 Application Information
UCC256302 can be used in a wide range of applications in which LLC topology is implemented. In order to make
the part easier to use, TI has prepared a list of materials to demonstrate the features of the device:
•
•
•
•
Full featured EVM hardware
A excel design calculator
Simulation models
Application notes on Hybrid Hysteretic Control theory
In the following sections, a typical design example is presented.
7.2 Typical Application
Shown below is a typical half bridge LLC application using UCC256302 as the controller.
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Typical Application (continued)
7.2.1 Design Requirements
The design specifications are summarized in Table 8.
Table 8. System Design Specifications
PARAMETER
INPUT CHARACTERISTICS
DC Voltage range
TEST CONDITIONS
MIN
TYP
MAX
UNITS
340
390
410
VDC
VAC
Hz
AC Voltage range
85
47
264
63
AC Voltage frequency
Input DC UVLO On
320
250
VDC
VDC
A
Input DC UVLO Off
Input DC current
Input = 340 VDC, full load = 10 A
Input = 390 VDC, full load = 10 A
Input = 410 VDC, full load = 10 A
0.383
0.331
0.315
Input DC current
A
Input DC current
A
OUTPUT CHARACTERISTICS
Output voltage, VOUT
Output load current, IOUT
Output voltage ripple
SYSTEMS CHARACTERISTICS
Switching frequency
Peak efficiency
No load to full load
12
VDC
A
340 VDC to 410 VDC
390 VDC and full load = 10 A
10
130
mVpp
53
160
kHz
ºC
390 VDC, load = A
Natural convection
92.9
25
Operating temperature
7.2.2 Detailed Design Procedure
7.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the UCC256302 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
•
•
•
•
Run electrical simulations to see important waveforms and circuit performance
Run thermal simulations to understand board thermal performance
Export customized schematic and layout into popular CAD formats
Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
7.2.2.2 LLC Power Stage Requirements
Start the design by deciding the LLC power stage component values. The LLC power stage design procedure
outlined here follows the one given in the TI application note “Designing an LLC Resonant Half-Bridge Power
Converters”. The application note contains a full explanation of the origin of each of the equations used. The
equations given below are based on the First Harmonic Approximation (FHA) method commonly used to analyze
the LLC topology. This method gives a good starting point for any design, but a final design requires an iterative
approach combining the FHA results, circuit simulation, and hardware testing. An alternative design approach is
given in TI application note SLUA733, LLC Design for UCC29950.
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7.2.2.3 LLC Gain Range
First, determine the transformer turns ratio by the nominal input and output voltages.
V
/ 2
IN nom
390 / 2
12
(
)
n =
=
= 16.25 Ω 16
VOUT nom
(6)
Then determine the LLC gain range Mg(min) and Mg(max). Assume there is a 0.5-V drop in the rectifier diodes (Vf)
and a further 0.5-V drop due to other losses (Vloss).
VOUT min +V
f
12 + 0.5
410 / 2
(
)
Mg min = n
= 16
= 0.976
(
)
V
/ 2
IN max
(7)
(8)
VOUT max +V +V
f
loss
12 + 0.5 + 0.5
(
)
Mg max = n
= 16
= 1.224
(
)
V
/ 2
340 / 2
IN min
7.2.2.4 Select Ln and Qe
Ln is the ratio between the magnetizing inductance and the resonant inductance.
Lm
Ln =
Lr
(9)
Qe is the quality factor of the resonant tank.
Lr / Cr
Qe =
Re
(10)
In this equation, Re is the equivalent load resistance.
Selecting Ln and Qe values should result in an LLC gain curve, as shown below, that intersects with Mg(min) and
Mg(max) traces. The peak gain of the resulting curve should be larger than Mg(max). Details of how to select Ln and
Qe are not discussed here. They are available in the Application Note, UCC25630x Practical Design Guidelines
and UCC256302 Design Calculator.
In this case, the selected Ln and Qe values are:
Ln = 13.5
(11)
(12)
Qe = 0.15
7.2.2.5 Determine Equivalent Load Resistance
Determine the equivalent load resistance by Equation 13.
8 ìn2
Œ2
8 ì162 12
VOUT nom
(
)
Re =
ì
=
ì
= 249W
Œ2
IOUT nom
10
(13)
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7.2.2.6 Determine Component Parameters for LLC Resonant Circuit
Before determining the resonant tank component parameters, a nominal switching frequency (resonant
frequency) should be selected. In this design, 100 kHz is selected as the resonant frequency.
f0 = 100kHz
(14)
The resonant tank parameters can be calculated as the following:
1
1
Cr =
=
= 42.6
2Œ ìQe ìf0 ìRe 2Œ ì0.15ì100kHz ì 249W
(15)
1
1
Lr =
=
= 59.5mH
2Œ ìf 2 Cr
2Œ ì100kHz 2 ì 42.6nF
0
(16)
(17)
Lm = Ln ìLr = 13.5ì59.5 mH = 803mH
After the preliminary parameters are selected, find the closest actual component value that is available, re-check
the gain curve with the selected parameters, and then run time domain simulation to verify the circuit operation.
The following resonant tank parameters are:
Cr = 44nF
(18)
(19)
(20)
Lr = 61.5 mH
Lm = 830 mH
Based on the final resonant tank parameters, the resonant frequency can be calculated:
1
1
f0 =
=
= 96.8kHz
2Œ LrCr
2Œ 44nF ì 61.5 mH
(21)
Based on the new LLC gain curve, the normalized switching frequency at maximum and minimum gain are given
by:
fn Mgmax = 0.52
(22)
(23)
fn Mgmin = 1.15
The maximum and minimum switching frequencies are:
fSW Mgmax =50.3kHz
(24)
(25)
fSW Mgmin =111.3kHz
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7.2.2.7 LLC Primary-Side Currents
The primary-side currents are calculated for component selection purpose. The currents are calculated based on
a 110% overload condition.
The primary side RMS load current is given by:
Io
n
Œ
Œ
1.1ì10A
Ioe
=
ì
=
ì
= 0.764A
16
2 2
2 2
(26)
The RMS magnetizing current at minimum switching frequency is given by:
nVOUT
2 2
2 2
16 ì12
2Œ ì50.3kHz ì830mH
Im
=
ì
=
ì
= 0.659 A
Œ
&Lm
Œ
(27)
(28)
The total current in resonant tank is given by:
2
Ir = Im2 + Io2e
=
0.764A 2 + 0.659A = 1.009A
7.2.2.8 LLC Secondary-Side Currents
The total secondary side RMS load current is the current referred from the primary side current (Ioe) to the
secondary side.
Ioes = n ìIoe = 16ì0.764A = 12.218A
(29)
In this design, the transformer’s secondary side has a center-tapped configuration. The current of each
secondary transformer winding is calculated by:
2 ìIoes
2
2 ì12.218A
Iws
=
=
= 8.639A
2
(30)
The corresponding half-wave average current is:
2 ìIoes
2
2 ì12.218A
Isav
=
=
= 5.503A
Œ
(31)
7.2.2.9 LLC Transformer
A bias winding is needed in order to utilize the HV self start up function. It is recommended to design the bias
winding so that the VCC voltage is greater than 13 V.
The transformer can be built or purchased according to these specifications:
•
•
•
•
•
•
•
•
•
Turns ratio: Primary : Secondary : Bias = 32 : 2 : 3
Primary terminal voltage: 450Vac
Primary magnetizing inductance: LM = 830 µH
Primary side winding rated current: Ir = 1.009 A
Secondary terminal voltage: 36Vac
Secondary winding rated current: Iws = 8.639 A
Minimum switching frequency: 50.3 kHz
Maximum switching frequency: 111.3 kHz
Insulation between primary and secondary sides: IEC60950 reinforced insulation
The minimum operating frequency during normal operation is that calculated above but during shutdown the LLC
can operate at right above ZCS boundary condition, which is a lower frequency. The magnetic components in the
resonant circuit, the transformer and resonant inductor, should be rated to operate at this lower frequency.
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7.2.2.10 LLC Resonant Inductor
The AC voltage across the resonant inductor is given by its impedance times the current:
VL = &LRIR = 2Œ ì50.3 ì103 ì 61.5ì10-6 ì1.009 = 19.607V
R
(32)
The inductor can be built or purchased according to the following specifications:
•
•
•
•
Inductance: Lr = 61.5 µH
Rated current: Ir = 1.009 A
Terminal AC voltage:
Frequency range: 50.3 kHz to 111.3 kHz
The minimum operating frequency during normal operation is that calculated above but during shutdown the LLC
can operate at right above ZCS boundary condition, which is a lower frequency. The magnetic components in the
resonant circuit, the transformer and resonant inductor, should be rated to operate at this lower frequency.
7.2.2.11 LLC Resonant Capacitor
This capacitor carries the full-primary current at a high frequency. A low dissipation factor part is needed to
prevent overheating in the part.
The AC voltage across the resonant capacitor is given by its impedance times the current.
Ir
1.009
VCR
=
=
= 72.5V
2Œ ì50.3 ì103 ì 44 ì10-9
&Cr
(33)
(34)
2
2
V
≈
’
IN max
410
2
(
)
≈
’
VCR rms
=
+VC2R
=
+ 72.52 = 217.4V
∆
∆
«
÷
÷
◊
∆
«
÷
◊
(
)
2
Peak voltage:
V
IN max
410
2
(
)
VCR peak
=
+ 2VCR
=
+ 2 ì72.5 = 307.5V
- 2 ì72.5 = 102.5V
(
)
2
(35)
Valley voltage:
V
IN max
(
410
)
VCR valley
=
- 2VCR
=
(
)
(36)
(37)
Rated current:
Ir = 1.009 A
7.2.2.12 LLC Primary-Side MOSFETs
Each MOSFET sees the input voltage as its maximum applied voltage. Choose the MOSFET voltage rating to be
1.5 times of the maximum bulk voltage:
VQLLC peak = 1.5 ìV
= 615V
IN max
(38)
Choose the MOSFET current rating to be 1.1 times of the maximum primary side RMS current:
IQLLC = 1.1ìIr = 1.109A
(39)
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7.2.2.13 Design Considerations for Adaptive Dead-Time
After the resonant tank is designed and the primary side MOSFET is selected, the ZVS operation of the
converter needs to be double checked. ZVS can only be achieved when there is enough current left in the
resonant inductor at the gate turn off edge to discharge the switch node. UCC256302 implements adaptive dead-
time based on the slewing of the switch node. The slew detection circuit has a detection range of 1V/ns to 50
V/ns.
To check the ZVS operation, a series of time domain simulations are conducted, and the resonant current at the
gate turn off edges are captured. An example plot is shown below:
2
Input Voltage (V)
350
360
370
380
390
400
1.75
1.5
1.25
1
0.75
0
2
4
6
8
10
12
D001
Load Current (A)
Figure 48. Adaptive Dead-Time
The figure above assumes the maximum switching frequency occurs at 5% load, and system starts to burst at
5% load.
From this plot, the minimum resonant current left in the tank is Imin = 0.8 A in the interested operation range. In
order to calculate the slew rate, the primary side switch node parasitic capacitance must be known. This value
can be estimated from the MOSFET datasheet. In this case, Cswitchnode = 400 pF. The minimum slew rate is given
by:
IMIN
0.8 A
=
= 2V / ns
Cswitchnode 400 pF
(40)
This is larger than 1 V/ns minimum detectable slew rate.
7.2.2.14 LLC Rectifier Diodes
The voltage rating of the output diodes is given by:
V
IN max
410
16
(
)
VDB = 1.2ì
= 1.2ì
= 30.75V
n
(41)
(42)
The current rating of the output diodes is given by:
2 ìIoes
2 ì12.218
ISAV
=
=
= 5.5 A
Œ
Œ
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7.2.2.15 LLC Output Capacitors
The LLC converter topology does not require an output filter although a small second stage filter inductor may be
useful in reducing peak-to-peak output noise. Assuming that the output capacitors carry the rectifier’s full wave
output current then the capacitor ripple current rating is:
Œ
Œ
IRECT
=
IOUT
=
ì10 = 11.11A
2 2
2 2
(43)
(44)
Use 20 V rating for 12-V output voltage:
VLLCcap = 20V
The capacitor’s RMS current rating is:
2
2
≈ Œ
’
≈ Œ
’
IC out
=
IOUT ÷ - IO2UT
=
ì10 -102 = 4.84A
∆
∆
÷
(
)
2 2
2 2
«
◊
«
◊
(45)
Solid Aluminum capacitors with conductive polymer technology have high ripple-current ratings and are a good
choice here. The ripple-current rating for a single capacitor may not be sufficient so multiple capacitors are often
connected in parallel.
The ripple voltage at the output of the LLC stage is a function of the amount of AC current that flows in the
capacitors. To estimate this voltage, assume that all the current, including the DC current in the load, flows in the
filter capacitors.
VOUT pk -pk
0.3V
(
)
ESRmax
=
=
= 19mW
Œ
IRECT pk
(
)
2
ì10A
4
(46)
The capacitor specifications are:
•
•
•
Voltage Rating: 20 V
Ripple Current Rating: 4.84 A
ESR: < 19 mΩ
7.2.2.16 HV Pin Series Resistors
Multiple resistors are connected in series with the HV pin to limit the power dissipation of the UCC256302 device.
The recommended series resistor for the HV pin is 5kΩ.
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7.2.2.17 BLK Pin Voltage Divider
BLK pin senses the LLC input voltage and determines when to turn on and off the LLC converter. Different
versions of UCC256302 have different BLK thresholds.
Choose bulk startup voltage at 340 V, then the BLK resistor divider ratio can be calculated as below:
340V
kBLK
=
= 113.33
3V
(47)
The desired power consumption of the BLK pin resistor divider is PBLKsns = 10 mW. The BLK sense resistor total
value is given by:
V2
3902
IN nom
(
)
RBLKsns
=
=
= 15.21MW
PBLKsns
0.01
(48)
The lower BLK divider resistor value is given by:
RBLKsns
15.21MW
113.33
RBLKlower
=
=
= 134kW
kBLK
(49)
(50)
(51)
The higher BLK divider resistor value is given by:
RBLKupper = RBLKsns - RBLKlower = 15.08MW
The actual bulk voltage thresholds can be calculated:
VBulkStart = 340V
(52)
(53)
(54)
4
VBulkOVRise = 340V ì = 453V
3
3.75
VBulkOVFall = 340V ì
= 425V
3
7.2.2.18 BW Pin Voltage Divider
BW pin senses the output voltage through the bias winding and protects the power stage from over voltage. The
nominal output voltage is 12 V. The bias winding has 3 turns, and the secondary side winding has 2 turns. So the
nominal voltage of the bias winding is given by:
3
VBiasWindingNom = 12V ì = 18V
2
(55)
The desired OVP threshold in this design is 115% of the nominal value. The OVP threshold level in UCC256302
device is 4 V, so the nominal BW pin voltage is given by:
4V
VBWnom
=
= 3.48V
115%
(56)
(57)
Choose the lower resistor of the BW resistor divider to be 10 kΩ.
RBWlower = 10kW
The upper resistor can be calculated by:
V
-VBWnom
≈
∆
«
’
÷
◊
18 - 3.48
≈
’
BiasWindingNom
RBWupper = RBWlower
ì
= 10kW ì
= 41.75kW
∆
«
÷
◊
VBWnom
3.48
(58)
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7.2.2.19 ISNS Pin Differentiator
ISNS pin sets the over current protection level. OCP1 is peak current protection level; OCP2 and OCP3 are
average current protection levels. The threshold voltages are 0.6 V, 0.8 V, and 4 V, respectively.
Set OCP3 level at 150% of full load. Thus, the sensed average input current level at full load is given by:
0.6V
V
=
= 0.4V
ISNSfullload
150%
The current sense ratio can then be calculated:
(59)
V
0.4V
120W
ISNSfullload
kISNS
=
=
= 1.222dW
≈
∆
«
’
÷
◊
≈
’
1
POUT
1
ì
ì
∆
«
÷
◊
0.94 390V
ꢀ
Vbulknom
(60)
(61)
Select a current sense capacitor first, since there are less high voltage capacitor choices than resistors:
CISNS = 150pF
Then calculate the required ISNS resistor value:
kISNSCr
CISNS
1.222dW ì 44n
150 p
RISNS
=
=
= 358.45dW
(62)
(63)
After the current sense ratio is determined, the peak ISNS pin voltage at full load can be calculated:
2Ir ìkISNS 2 ì1.009Aì1.222dW = 1.74V
V
=
=
ISNSpeak
The peak resonant current at OCP1 level is given by:
4V
IrespeakOCP1
=
= 3.27 A
1.222W
The peak secondary-side current at OCP1 level is given by:
(64)
(65)
Npri
32
2
IsecpeakOCP1 = IrespeakOCP1
= 3.27Aì
= 52.37A
Nsec
7.2.2.20 VCR Pin Capacitor Divider
The capacitor divider on the VCR pin sets two parameters: (1) the divider ratio of the resonant capacitor voltage;
(2) the amount of frequency compensation to be added. The first criteria the capacitor divider needs to meet is
that under over load condition, the peak-to-peak voltage on VCR pin is with in 6 V.
As derived earlier, the following relationship between VCOMP voltage, ΔVCR, switching period, input average
current, and the VCR capacitor divider is shown in Equation 66
C1
1
1
T
VCOMP = DVCR ö
ìIIN avg ìT + ICOMP
ì
ì
(
)
C1 +C2 Cr
C1 +C2
2
(66)
In this equation, C1 is the upper capacitor on the capacitor divider; C2 is the lower capacitor on the capacitor
divider. VCOMP is contributed by two parts – the divided resonant capacitor voltage, and the voltage generated
by the VCR pin internal current sources. Define the contribution of the internal current source to be KVCRRamp
.
1
T
ICOMP
ì
ì
C1 +C2
2
1
kVCRRamp
=
=
C1
C1 +C2 Cr
IIN avg
1
1
T
C1
(
)
ìIIN avg ìT + ICOMP
ì
ì
ì 2 +1
(
)
C1 +C2
2
Cr ICOMP
(67)
Select C1 and C2 so that KVCRRamp is within 0.1 ~ 0.6 range, and at over load condition, VCOMP is less than 6 V.
In this example C1 = 150 pF and C2 = 15 nF is select.
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7.2.2.21 Burst Mode Programming
The burst mode programming interface enables user to program a burst mode threshold voltage (VLL) which
adaptively changes with input voltage. This way, consistent burst threshold can be achieved across VIN range,
thus making the efficiency curve more consistent across VIN range.
The following relationship exists between VLL voltage and BLK pin voltage:
VLL = a ìVBLK + b
(68)
In this equation, VLL is the burst mode threshold voltage; VBLK is BLK pin voltage; two parameters a and b can
be programmed by two external resistors.
After soft start is done, the sensed BLK pin voltage is applied to LL/SS pin from inside the IC through a buffer. As
shown in the figure below, this creates a difference between the current flowing through the programming resistor
RLLUpper and RLLLower. The difference between the current flows into the LL/SS pin, mirrored and then applied to a
250-kΩ resistor RLL. The voltage on RLL is used as VLL.
!ë55
RVCC
LL/SS
R2
9
-
+
-
R1
ë[[
+
ë.[Y
!Db5
Figure 49. Burst Mode Programming
The relationship between VLL and VBLK can then be derived:
VRVCC -VBLK
VBLK
VLL
-
=
RLLUpper
RLLLower RLL
(69)
(70)
Equation 69 rearranged produces Equation 70
R
+ RLLLower ìR
(
)
RLL
LLUpper
LL
VLL = -
ìVBLK +
VRVCC
RLLUpper RLLLower
RLLUpper
To determine RLLUpper and RLLLower, two sets of (VLL, VBLK) values are required. VBLK can be measured directly
from BLK pin. VLL level can be measured by inserting a 10-kΩ resistor between the feedback optocoupler
emitter and ground. Assume the voltage measured on the 10-kΩ resistor is V10k. Then VLL voltage can be
calculated as:
V
≈
’
10kW
VLL = I
-
ì100kꢀ
∆
÷
÷
FB
∆
10kꢀ
«
◊
(71)
Remove the RLLUpper. In this way, the VLL voltage is at its minimal value 0.7 V, which is determined by the
internal circuit design. Then adjust the load current to the desired burst mode threshold load level, and make
sure the power stage does not burst in this condition. For example, 10% load is the desired burst mode threshold
level. With 10 A as the full-load condition, set the load current to 1 A. After the load current is set, change the
input voltage to two different voltages and record two different readings (V10k, VBLK). Then based on
Equation 70 and Equation 71, RLLUpper and RLLLower can be solved.
In this example select the lower resistor to be 402 kΩ and the upper resistor to be 732 kΩ.
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7.2.2.22 Soft-Start Capacitor
The soft-start capacitor sets the speed of the soft-start ramp. The soft start time varies with load condition. At full
load or over load condition, the soft start time is the longest. It is not easy to calculate the exact soft start time
value. However, it can be estimated that under full load condition, the longest possible soft start time is given by:
7V ìCSS
25 ꢀA
TSS
=
(72)
Using a 150-nF soft-start capacitor, gives the longest possible soft-start time as 42 ms according to Equation 72.
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7.2.3 Application Curves
12.03
12.025
12.02
12.015
12.01
12.005
12
94
92
90
88
86
84
82
80
78
76
Vin = 390 V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
Iout (A)
Iout (A)
D002
D002
Figure 50.
Figure 51.
Transient Response
Transient Response
Figure 52.
Figure 53.
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Output Ripple
Figure 54.
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8 Power Supply Recommendations
8.1 VCC Pin Capacitor
The VCC capacitor should be sized based on the total start-up charge required by the system. The start-up
charge will mostly be consumed by the gate driver circuit. Thus the total start-up charge can be estimated by the
start-up switching frequency, MOSFET gate charge, and the soft-start time.
Assume the total start-up charge required by the system is shown in Equation 73
Qtot = 1.6mC
(73)
(74)
During PFC and LLC startup phase, the maximum VCC voltage drop allowed is
Vccdropmax = 26V -10.5V = 15.5V
The minimum VCC capacitor needed:
Q
tot
CVCC
=
= 103 ꢀF
Vccdropmax
(75)
Choose 110-µF capacitor.
8.2 Boot Capacitor
During burst off period, power consumed by the high side gate driver from the HB pin must be drawn from CBOOT
and will cause its voltage to decay. At the start of the next burst period there must be sufficient voltage remaining
on CBOOT to power the high side gate driver until the conduction period of LO allows it to be replenished from
CRVCC. The power consumed by the high side driver during this burst off period will therefore have a direct impact
on the size and cost of capacitors that must be connected to CBOOT and RVCC.
Assume the system has a maximum burst off period of 10 ms.
tmaxoff = 10ms
(76)
Assume the bootstrap diode has a forward voltage drop of 1 V:
Vbootforwarddrop = 1V
(77)
Assume the boot voltage to be always above 8 V to avoid UVLO fault. Then the maximum allowed voltage drop
on boot capacitor is:
Vbootmaxdrop =VRVCC -Vbootforwarddrop - 8V = 12V -1V - 8V = 3V
(78)
Boot capacitor can then be sized:
Ibootleak maxoff
t
85ꢀAì10ms
3V
Cboot
=
=
= 284nF
Vbootmaxdrop
(79)
1200
1000
800
600
400
200
0
0
3
6
9
12
15
18
21
24
27
30
D002
Maximum Burst Off Period (ms)
Figure 55. Minimum Required Boot Capacitance vs. Maximum Burst Off Period
56
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8.3 RVCC Pin Capacitor
RVCC capacitor needs to be at least 5 times of boot capacitor. In addition, sizing of the RVCC capacitor depends
on the stability of RVCC LDO. If load is light on RVCC, smaller capacitors can be used. The larger the load, the
larger the capacitor is needed. In a typical system, the RVCC LDO powers the PFC and LLC gate drivers. The
plot below shows the worst case RVCC LDO phase margin versus RVCC capacitor for various load currents.
RVCC capacitor should be sized based on the figure below.
60
DC Load Current (mA)
1
10
25
50
50
40
30
20
10
0
75
1
2
3
4
5
6
7
8
9
10
D003
RVCC Capacitance (mF)
Figure 56. RVCC Pin Capacitor
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9 Layout
9.1 Layout Guidelines
•
Put a 2.2-µF ceramic capacitor on VCC pin in addition to the energy storage electrolytic capacitor. The 2.2-µF
ceramic capacitor should be put as close as possible to the VCC pin.
•
RVCC pin should have a bypass capacitor of 4.7 µF or more. It is recommended to add a 0.1-µF ceramic
capacitor in addition to the 4.7 µF. The capacitors should be put as close as possible to the RVCC pin. RVCC
cap needs to be at least 5 times of boot capacitor.
•
Minimum recommended boot capacitor is 0.1 µF. The minimum value of the boot capacitor needs to be
determined by the minimum burst frequency. The boot capacitor should be large enough to hold the bootstrap
voltage during the lowest burst frequency. Please refer to the boot leakage current in the electrical table.
•
•
•
•
•
•
•
Use large copper pour around GND pin
The filtering capacitor on BW, ISNS, BLK should be put as close as possible to the pin
FB trace should be as short as possible
Soft-start capacitor should be put as close as possible to LL/SS pin
Use film capacitor or C0G, NP0 ceramic capacitor on VCR divider and ISNS capacitor for low distortion
It is recommended that ISNS resistor is less than 500 Ω to keep the node impedance low
Add necessary filtering capacitors on BW pin to filter out the high spikes on the bias winding waveform. It is
critical to filter out the high spikes because internally the signal is peak detected and then sampled at the low
side turn off edge.
•
•
Do not put any capacitor on HV pin to ground. The layout of this pin should result in low parasitic capacitance
(<60 pF) from HV pin to ground.
Keep necessary high voltage clearance
9.2 Layout Example
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10 Device and Documentation Support
10.1 Device Support
10.1.1 Development Support
10.1.1.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the UCC256302 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
•
•
•
•
Run electrical simulations to see important waveforms and circuit performance
Run thermal simulations to understand board thermal performance
Export customized schematic and layout into popular CAD formats
Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
10.2 Documentation Support
10.2.1 Related Documentation
For related documentation see the following:
•
•
Design Spreadsheet, UCC25630 Design Calculator, UCC634
User Guide, Using UCC25630-1EVM-291,
10.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
10.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
10.5 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
10.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
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10.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
11 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
UCC25630-2DDBR
UCC25630-2DDBT
ACTIVE
ACTIVE
SOIC
SOIC
DDB
DDB
14
14
2500 RoHS & Green
250 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
UCC256302
UCC256302
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE OUTLINE
DDB0014A
SOIC - 1.75 mm max height
S
C
A
L
E
1
.
8
0
0
SOIC
C
6.2
5.8
TYP
SEATING PLANE
0.1 C
PIN 1 ID
AREA
A
10X 1.27
16
1
10.0
9.8
NOTE 3
2X
8.89
8
9
0.51
14X
4.0
3.8
NOTE 4
0.31
B
1.75 MAX
0.25
C A B
0.25
TYP
0.13
0.25
GAGE PLANE
SEE DETAIL A
0.25
1.27
0 - 8
0.10
0.40
DETAIL A
TYPICAL
4222925/A 04/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.43 mm per side.
5. Reference JEDEC registration MS-012, variation AC.
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EXAMPLE BOARD LAYOUT
DDB0014A
SOIC - 1.75 mm max height
SOIC
14X (1.55)
14X (0.6)
SYMM
1
16
(4.445)
TYP
10X (1.27)
SYMM
(R0.05)
TYP
9
8
(5.4)
LAND PATTERN EXAMPLE
SCALE:8X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4222925/A 04/2016
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
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EXAMPLE STENCIL DESIGN
DDB0014A
SOIC - 1.75 mm max height
SOIC
14X (1.55)
14X (0.6)
SYMM
1
16
(4.445)
TYP
14X (1.27)
SYMM
8
9
(5.4)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:8X
4222925/A 04/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you
permission to use these resources only for development of an application that uses the TI products described in the resource. Other
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,
damages, costs, losses, and liabilities arising out of your use of these resources.
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on
ti.com or provided in conjunction with such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable
warranties or warranty disclaimers for TI products.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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