UCC3952DP-3G4 [TI]
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16, SOIC-16;型号: | UCC3952DP-3G4 |
厂家: | TEXAS INSTRUMENTS |
描述: | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16, SOIC-16 信息通信管理 光电二极管 |
文件: | 总9页 (文件大小:131K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SLUS400D – AUGUST 2000
PW PACKAGE
(TOP VIEW)
D
Protects Sensitive Lithium-Ion Cells From
Overcharging and Over-Discharging
D
Dedicated for One-Cell Applications
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TCLK
NC
PACK+
CBPS
NC
PACK–
PACK–
PACK–
PACK–
PACK–
D
Integrated Low-Impedance MOSFET Switch
and Sense Resistor
BNEG
BNEG
BNEG
BNEG
BNEG
BNEG
D
Precision Trimmed Overcharge and
Overdischarge Voltage Limits
D
D
D
D
D
Extremely Low Power Drain
3-A Current Capacity
Overcurrent and Short-Circuit Protection
Reverse Charger Protection
Thermal Protection
description
DP PACKAGE
(TOP VIEW)
The UCC3952 monolithic BiCMOS lithium–ion
battery protection circuit increases the useful
operating life of a one-cell rechargeable battery
pack. Cell protection features include internally
trimmed charge and discharge voltage limits,
discharge current limit with a delayed shutdown,
and an ultra-low-current sleep mode state when
the cell is discharged. Additional features include
an on-chip MOSFET for reduced external compo-
nent count and a charge pump for reduced power
losses while charging or discharging a low-cell-
voltage battery pack. This protection circuit
requires one external capacitor and can operate
and safely shut down in a short circuit condition.
TCLK
NC
PACK+
CBPS
NC
1
2
3
4
5
6
7
8
16
15
14
NC
SUB
13 SUB
12
11
10
9
SUB
SUB
BNEG
BNEG
BNEG
PACK–
PACK–
PACK–
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2000, Texas Instruments Incorporated
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
U C C 3 9 5 2 - 1 , U C C 3 9 5 2 - 2 , U C C 3 9 5 2 - 3 , U C C 3 9 5 2 - 4
S in g le ĆC e ll L ith i u mĆI on Ba tte r y Pr o te c tio n IC
SLUS400D – AUGUST 2000
application diagram
+
PACK
1
2
3
4
5
6
7
8
TCLK
N/C
16
15
3 kΩ
+
CBPS
0.1µF
BNEG
BNEG
BNEG
BNEG
BNEG
NC 14
CHARGER
13
12
11
10
9
–
–
–
–
PACK
PACK
PACK
PACK
LOAD
–
PACK
BNEG
AVAILABLE OPTIONS
PACKAGES
T
A
TSSOP–16 (PW)
SOIC–16 (DP)
UCC3952PW–1
UCC3952PW–2
UCC3952PW–3
UCC3952PW–4
UCC3952DP–1
UCC3952DP–2
UCC3952DP–3
UCC3952DP–4
–20°C to 70 °C
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
U C C 3 9 5 2 - 1 , U C C 3 9 5 2 - 2 , U C C 3 9 5 2 - 3 , U C C 3 9 5 2 - 4
Si n gl e ĆCe ll L ith iu m ĆIo n Ba tte r y P r ot ect i on I C
SLUS400D – AUGUST 2000
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage (PACK+ to BNEG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Maximum forward voltage (PACK+ to PACK–) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 V
Maximum reverse voltage (where PACK+ to BNEG = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8 V
Maximum cell continuous charge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Junction temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 150°C
J
Storage Temperature range, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Currents are positive into, negative out of the specified terminal. Consult Packaging Section of Data Book for thermal limitations and
considerations of packages. All voltages are referenced to GND.
electrical characteristics, T = –20°C to 70°C, all voltages are with respect to BNEG (unless
A
otherwise stated)
state transition threshold
PARAMETER
TEST CONDITIONS
MIN
4.15
4.20
4.25
4.30
3.85
3.90
3.95
4.00
2.25
2.55
10
TYP
4.20
4.25
4.30
4.35
3.90
3.95
4.00
4.05
2.35
2.65
25
MAX UNITS
4.25
UCC3952–1
UCC3952–2
UCC3952–3
UCC3952–4
UCC3952–1
UCC3952–2
UCC3952–3
UCC3952–4
4.30
V
(OV)
Normal to overcharge voltage
V
4.35
4.40
3.95
4.00
Overcharge to normal recovery
voltage
V
V
(OVR)
4.05
4.10
V
V
Normal to undercharge
2.45
2.75
40
V
V
(UV)
(UVR)
d(OD)
Undercharge to normal recovery
Overcharge delay time
t
ms
short circuit protection
PARAMETER
TEST CONDITIONS
PACK+ = 3.7 V
MIN
3.0
1
TYP
MAX UNITS
I
t
Discharge current limit
6.0
3.0
A
(THLD)
Discharge current delay
PACK+ = 3.7 V, I = 6 A
I
ms
MΩ
d(DLY)
R
Discharge current reset resistance
PACK+ = 3.7 V
7.5
(RESET)
bias
PARAMETER
Supply current
TEST CONDITIONS
MIN
TYP
5
MAX UNITS
I
V
V
V
< V
< V
< V
(OV)
8
24
µA
µA
µA
DD
(UV)
(PACK)
I
Operating supply current in overvoltage
Shutdown current
11
DD(OV)
(OV)
(PACK)
I
= 2.0 V
2.5
(SD)
(PACK)
Minimum cell voltage when all circuits are fully
functional
V
1.7
V
s
(min)
t (OV)
d
Overvoltage delay time
1
2
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
U C C 3 9 5 2 - 1 , U C C 3 9 5 2 - 2 , U C C 3 9 5 2 - 3 , U C C 3 9 5 2 - 4
S in g le ĆC e ll L ith i u mĆI on Ba tte r y Pr o te c tio n IC
SLUS400D – AUGUST 2000
electrical characteristics, T = –20°C to 70°C, all voltages are with respect to BNEG (unless
A
otherwise stated) (continued)
FET switch
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
PACK+ > V
OV
(SWITCH)
Battery overcharged state switch permits discharge
,
I
= 1 mA to 2 A,
100
400
mV
current only.
V
Voltage at PACK–
(PACK–)
PACK+ = 2.5V,
I
= –1 mA to –2 A,
(SWITCH)
–600
–100
50
mV
Battery overdischarged state switch permits charge
current only.
PACK+ = 2.5 V,
In normal mode (when not in OV or UV). This value
includes package and bondwire resistance.
R
Series resistance of the device
75
mΩ
ON
thermal shutdown
PARAMETER
Thermal shutdown temperature (see Note 2)
TEST CONDITIONS
MIN
TYP
MAX UNITS
T
(SD)
135
°C
NOTE 2: This parameter is ensured by design and is not production tested.
detailed description
pin descriptions
BNEG
Connect the negative terminal of the battery to this pin.
PACK+
Connect to the positive terminal of the battery. This pin is available to the user.
CBPS
This power supply bypass pin is connected to PACK+ through an internal 3-kΩ resistor. An external 0.1-µF
capacitor must be connected between this pin and BNEG.
PACK–
The negative terminal of the battery pack (negative terminal available to the user). The internal FET switch
connects this terminal to the BNEG terminal to give the battery pack user appropriate access to the battery. In
an overcharged state, only discharge current is permitted. In an overdischarged state, only charge current is
permitted.
SUB (DP Package Only)
Do not connect. These pins must be electrically isolated from all other pins. The SUB pins may be soldered to
an isolated copper pad for heatsinking. However, most applications do not require heatsinking.
TCLK
Production test mode pin. This pin is used to provide a high-frequency clock to the IC during production testing.
In an application, this pin is left unconnected or tied to BNEG.
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
U C C 3 9 5 2 - 1 , U C C 3 9 5 2 - 2 , U C C 3 9 5 2 - 3 , U C C 3 9 5 2 - 4
Si n gl e ĆCe ll L ith iu m ĆIo n Ba tte r y P r ot ect i on I C
SLUS400D – AUGUST 2000
APPLICATION INFORMATION
PACK+ 16
CBPS 15
3k
V
UV
V
UVR
4–1
MUX
T
DEL
OV
STATE
MACHINE
LOGIC
V
1SEC
OVR
THRESHOLD
COMPARATOR
TCLK
N/C
1
2
3
4
5
6
7
8
9
V
OV
1.5V
T
SEL
DEL
UV
10mS
CLK
BNEG
BNEG
BNEG
BNEG
BNEG
BNEG
PACK–
SYSTEM
CLOCK
GENERATOR
TDLS
1mS
SETD
V
PUMP
50mV
50mV
2MΩ
RST
THERMAL
SHUTDOWN
PACK– 10
PACK– 11
PACK– 12
13
PACK–
NC 14
Figure 1. Detailed Block Diagram
battery voltage monitoring
The battery cell voltage is sampled every 8 ms by connecting a resistor divider across it and comparing the
resulting voltage to a precision internal reference voltage. Under normal conditions (cell voltage is below
overvoltage threshold and above undervoltage threshold), the UCC3952 consumes less than 10 µA of current
and the internal MOSFET is fully turned on with the aid of a charge pump.
When the cell voltage falls below the undervoltage threshold for two consecutive samples, the IC disconnects
the load from the battery pack and enters a super-low-power mode. The pack remains in this state until it detects
the application of a charger, at which point charging is enabled. The requirement of two consecutive readings
below the undervoltage threshold filters out momentary drops in cell voltage due to load transients, preventing
nuisance trips.
If the cell voltage exceeds the overvoltage threshold for 1 second, charging is disabled; however, discharge
current is still allowed. This feature of the IC is explained further in the controlled charge/discharge mode section
of this document.
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
U C C 3 9 5 2 - 1 , U C C 3 9 5 2 - 2 , U C C 3 9 5 2 - 3 , U C C 3 9 5 2 - 4
S in g le ĆC e ll L ith i u mĆI on Ba tte r y Pr o te c tio n IC
SLUS400D – AUGUST 2000
APPLICATION INFORMATION
overcurrent monitoring and protection
Discharge current is continuously monitored via an internal sense resistor. In the event of excessive current,
an overcurrent condition is declared if the high current (over 3 A) persists for over 1 ms. This delay allows for
charging of the system bypass capacitors without tripping the overcurrent protection. A 0.1-µF capacitor on the
CBPS pin provides momentary holdup for the IC to assure proper operation in the event that a hard short
suddenly pulls the cell voltage below the minimum operating voltage.
Once an overcurrent condition has been declared, the internal MOSFET turns off. To return the device to normal
operation, the UCC3952 requires a load impedance greater than 7.5 MΩ across PACK+ to PACK–. This
impedance is typically achieved by removing the battery pack from the system. At this point, the pack returns
to its normal state of operation.
controlled charge/discharge mode
When the chip senses an overvoltage condition, it prevents any additional charging, but allows discharge. This
is accomplished by activating a linear control loop, which controls the gate of the MOSFET based on the
differential voltage across its drain-to-source terminals. The linear loop attempts to regulate the differential
voltage across the MOSFET to 100 mV. When a light load is applied to the part, the loop adjusts the impedance
of the MOSFET to maintain 100 mV across it. As the load increases, the impedance of the MOSFET is
decreased to maintain the 100-mV control. At heavy loads (still below the overcurrent limit), the loop does not
maintain regulation and drives the gate of the MOSFET to the battery voltage (not the charge-pump output
voltage). The MOSFET R
in the overvoltage state is higher than RDS(on) during normal operation. The
DS(on)
voltage drop (and associated power loss) across the internal MOSFET in this mode of operation is still
significantly lower than the typical solution of two external back-to-back MOSFETs, where the body diode is
conducting.
When the chip senses an undervoltage condition, it disconnects the load from the battery pack and shuts itself
down to minimize current drain from the battery. Several circuits remain powered and detect placement of the
battery pack into a charger. Once the charger presence is detected, the linear loop is activated and the chip
allows charging current into the battery. This linear control mode of operation is in effect until the battery voltage
reaches a level of V
, at which time normal operation is resumed.
UVR
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PACKAGE OPTION ADDENDUM
www.ti.com
24-Feb-2006
PACKAGING INFORMATION
Orderable Device
UCC3952DP-1
Status (1)
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOIC
D
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952DP-2
SOIC
SOIC
D
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952DP-3
D
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952DP-3G4
UCC3952DP-4
SOIC
D
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
SOIC
D
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952DP-4G4
UCC3952PW-1
SOIC
D
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
TSSOP
PW
PW
PW
PW
PW
PW
PW
PW
PW
PW
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952PW-1G4
UCC3952PW-2
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952PW-3
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952PW-3G4
UCC3952PW-4
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
UCC3952PW-4G4
UCC3952PWTR-2
UCC3952PWTR-3
UCC3952PWTR-3G4
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
24-Feb-2006
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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information may not be available for release.
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to Customer on an annual basis.
Addendum-Page 2
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