IMBG65R163M1H
CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R163M1H CoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。
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INFINEON
T2180N14TOF VT
Phase Control Thyristor 1800 V, 2180 A with 100 mm diameter and a height of 26 mm assembled in high reliable, robust and hermetic sealed ceramic housings. The T2600N prime disc is specially optimized for UPS-Bypass applications and offers the highest current capability in the market.
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INFINEON
2S7A_0505S1.5UP
2W - Dual/Single Output DC-DC Converter - Fixed Input - Isolated & Unregulated
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GAPTEC
